Power amplifier circuit with dynamic biasing and radio frequency chip

Abstract

The application provides a power amplifier circuit with dynamic bias and a radio frequency chip, comprising an input matching module, a power amplification module, a bias circuit module, an output matching module and a power detection module, wherein the output end of the bias circuit module is connected with the power amplification module, and is used for providing corresponding bias voltage for the power amplification module according to the size of the control voltage input at the input end thereof; the input end of the power detection module is connected with the output end of the power amplification module, the output end thereof is connected with the input end of the bias circuit module, and the power detection module is used for collecting the output voltage of the output end of the power amplification module in real time, and outputting the control voltage for representing the voltage size through the output end according to the output voltage. The power amplifier circuit provided by the application uses the adaptive active linear bias circuit, so that the linearity of the power amplifier can be effectively improved, and the power amplifier efficiency is improved.

Description

Technical Field

[0001] This invention relates to the field of wireless radio frequency circuit design, and particularly to a power amplifier circuit and radio frequency chip with dynamic bias. Background Technology

[0002] In wireless communication systems, the power amplifier, as a core component at the end of the transmit link, directly determines the system's communication quality, coverage, and energy consumption. The core challenge in power amplifier design lies in balancing efficiency and linearity, especially in 5G communication scenarios. To improve transmission rate and spectral efficiency, systems employ complex non-constant envelope modulation techniques such as Quadrature Phase Shift Keying (QPSK), Quadrature Amplitude Modulation (QAM), and Orthogonal Frequency Division Multiplexing (OFDM). These signals typically have a high peak-to-average power ratio (PAPR). Generally, power amplifier efficiency increases with power, but linearity deteriorates significantly near saturation. Therefore, linearization techniques are needed to achieve a balance between high efficiency and high linearity.

[0003] The bias circuits of existing power amplifiers are generally divided into two types: one is as follows Figure 1 The simple bipolar transistor bias circuit shown consists of two resistors R connected in series for voltage division. When the input power increases, the diode clamping effect causes a decrease in the base-emitter DC voltage and an increase in the current of the output stage power transistor HBT, leading to a decrease in transconductance, gain attenuation, and phase distortion, severely affecting linearity. Another example is... Figure 2 The active linear bias circuit shown includes transistors D1 and D2 connected as diodes, a capacitor C, and two resistors R. When the input RF signal power increases, some RF signal leaks into the bias circuit. After rectification by transistor HBT2, the base-emitter junction DC voltage drop Vbe1 decreases, while the base-emitter junction voltage of power transistor HBT1 increases due to the decrease in the base-emitter junction voltage of transistor HBT2, thus providing compensation and stabilizing the quiescent operating point of the power amplifier. Although this active linear bias can effectively stabilize the bias voltage of the power transistors, thereby improving the linearity of the power amplifier, this fixed bias circuit shows little difference in the static bias current under low and high power conditions during power amplifier operation. This results in a large amount of DC power being consumed instead of being converted into useful RF output power, leading to low average efficiency of the entire system and failing to meet the high efficiency and high linearity requirements of wireless communication systems.

[0004] Therefore, there is an urgent need to provide a new power amplifier circuit to solve the above problems. Summary of the Invention

[0005] This invention provides a power amplifier circuit and RF chip with dynamic bias, aiming to solve the problem that the power conversion efficiency of existing fixed bias circuit designs cannot meet dynamic requirements.

[0006] To address the aforementioned technical problems, in a first aspect, the present invention provides a power amplifier circuit with dynamic bias.

[0007] The power amplifier circuit includes an input matching module, a power amplification module, a bias circuit module, an output matching module, and a power detection module, wherein:

[0008] The input terminal of the input matching module is used to receive external radio frequency signals, and the output terminal of the input matching module is connected to the input terminal of the power amplifier module. The input matching module is used to provide input impedance matching for the power amplifier module.

[0009] The input terminal of the power amplifier module is connected to the output terminal of the input matching module, and the output terminal of the power amplifier module is connected to the input terminal of the output matching module. The power amplifier module is used to amplify the power of the radio frequency signal.

[0010] The output terminal of the bias circuit module is connected to the power amplifier module and provides a bias voltage to the power amplifier module according to the magnitude of the control voltage input to its input terminal;

[0011] The input terminal of the output matching module is connected to the output terminal of the power amplifier module, and is used to provide output impedance matching for the power amplifier module. The output terminal of the output matching module is used to output the amplified radio frequency signal.

[0012] The input terminal of the power detection module is connected to the output terminal of the power amplifier module, and the output terminal of the power detection module is connected to the input terminal of the bias circuit module. The power detection module is used to collect the signal power of the radio frequency signal output by the power amplifier module in real time, and output a control voltage to characterize its power level according to the signal power. The control voltage is used to control the bias circuit module to achieve the output of dynamic bias voltage.

[0013] Furthermore, the power detection module includes a first transistor, a second transistor, a first resistor, a second resistor, a third resistor, a first capacitor, and a second capacitor, wherein:

[0014] The first terminal of the first capacitor serves as the input terminal of the power detection module, and the second terminal of the first capacitor is connected to the emitter of the first transistor.

[0015] The emitter of the first transistor is connected to the base of the first transistor, and the collector of the first transistor serves as the output terminal of the power detection module.

[0016] The first terminal of the second capacitor is connected to the collector of the first transistor, and the second terminal of the second capacitor is grounded.

[0017] The first end of the first resistor is connected to the base of the first transistor, and the second end of the first resistor is used to connect to the first external power supply voltage.

[0018] The first end of the second resistor is connected to the base of the first transistor, and the second end of the second resistor is connected to the emitter of the second transistor.

[0019] The emitter of the second transistor is connected to the base of the second transistor, and the collector of the second transistor is grounded;

[0020] The first end of the third resistor is connected to the collector of the first transistor, and the second end of the third resistor is grounded.

[0021] Furthermore, the bias circuit module includes a third transistor, a fourth transistor, a fourth resistor, a fifth resistor, a sixth resistor, a seventh resistor, an eighth resistor, a third capacitor, and a fourth capacitor, wherein:

[0022] The collector of the third transistor serves as the input terminal of the bias circuit module, the base of the third transistor is connected to the first terminal of the fourth resistor, and the emitter of the third transistor is connected to the first terminal of the sixth resistor.

[0023] The second end of the fourth resistor is connected to the collector of the third transistor;

[0024] The first end of the fifth resistor is connected to the base of the third transistor, and the second end of the fifth resistor is grounded.

[0025] The second terminal of the sixth resistor is grounded;

[0026] The first end of the seventh resistor is connected to the emitter of the third transistor, and the second end of the seventh resistor is connected to the base of the fourth transistor.

[0027] The collector of the fourth transistor is connected to the collector of the third transistor, and the emitter of the fourth transistor is connected to the first end of the eighth resistor.

[0028] The second end of the eighth resistor serves as the output terminal of the bias circuit module.

[0029] The first terminal of the third capacitor is connected to the base of the third transistor, and the second terminal of the third capacitor is connected to the second terminal of the eighth resistor.

[0030] The first terminal of the fourth capacitor is connected to the emitter of the fourth transistor, and the second terminal of the fourth capacitor is connected to the second terminal of the eighth resistor.

[0031] Furthermore, the power amplification module includes a first-stage power amplification transistor, a second-stage power amplification transistor, and an inter-electrode matching circuit, wherein:

[0032] The base of the first-stage power amplifier transistor serves as the input terminal of the power amplifier module, the collector of the first-stage power amplifier transistor is connected to the input terminal of the inter-electrode matching circuit, and the emitter of the first-stage power amplifier transistor is grounded.

[0033] The output terminal of the inter-electrode matching circuit is connected to the base of the second-stage power amplifier tube;

[0034] The collector of the second-stage power amplifier transistor serves as the output terminal of the power amplifier module, and the emitter of the second-stage power amplifier transistor is grounded.

[0035] The output terminal of the bias circuit module is connected to the base of the first-stage power amplifier tube and the base of the second-stage power amplifier tube, respectively.

[0036] Furthermore, the collector of the first-stage power amplifier transistor is connected to a second external power supply voltage for power supply, while the collector of the second-stage power amplifier transistor is connected to a first external power supply voltage for power supply.

[0037] Furthermore, the power amplification module also includes a first filter inductor, a first filter capacitor, a second filter inductor, and a second filter capacitor, wherein:

[0038] The first end of the first filter inductor is connected to the collector of the first stage power amplifier transistor, and the second end of the first filter inductor is used to connect to the second external power supply voltage; the first end of the first filter capacitor is connected to the second end of the first filter inductor, and the second end of the first filter capacitor is grounded.

[0039] The first end of the second filter inductor is connected to the collector of the second stage power amplifier transistor, and the second end of the second filter inductor is used to connect to the first external power supply voltage; the first end of the second filter capacitor is connected to the second end of the second filter inductor, and the second end of the second filter capacitor is grounded.

[0040] Furthermore, the third capacitor is a tunable capacitor.

[0041] Secondly, the present invention also provides a radio frequency chip, the radio frequency chip including the power amplifier circuit with dynamic bias as described above.

[0042] The beneficial effects achieved by this invention are that it proposes a power amplifier circuit with dynamic bias. This power amplifier circuit uses an adaptive active linear bias circuit, which can effectively improve the linearity of the power amplifier. In addition, unlike the existing fixed bias design, the architecture of this invention can dynamically adjust the bias state at different power levels to provide corresponding bias voltages for amplifier circuits at different power levels, thereby effectively improving the power amplifier efficiency. Attached Figure Description

[0043] The present invention will now be described in detail with reference to the accompanying drawings. The above and other aspects of the present invention will become clearer and more readily understood through the detailed description following the accompanying drawings. In the drawings:

[0044] Figure 1 This is a schematic diagram of an existing simple bipolar transistor bias circuit;

[0045] Figure 2 This is a schematic diagram of an existing active linear bias circuit;

[0046] Figure 3 This is a schematic diagram of a power amplifier circuit structure with dynamic bias provided in an embodiment of the present invention;

[0047] Figure 4 This is a schematic diagram of the power detection module circuit provided in an embodiment of the present invention;

[0048] Figure 5 This is a schematic diagram of the bias circuit module provided in an embodiment of the present invention. Detailed Implementation

[0049] To make the objectives, technical solutions, and advantages of this invention clearer, the invention will be further described in detail below with reference to the accompanying drawings and embodiments. It should be understood that the specific embodiments described herein are merely illustrative and not intended to limit the invention.

[0050] Example 1

[0051] Please refer to Figure 3 , Figure 3 This is a schematic diagram of a power amplifier circuit with dynamic bias provided in an embodiment of the present invention. The power amplifier circuit 100 includes an input matching module 101, a power amplification module 102, a bias circuit module 103, an output matching module 104, and a power detection module 105, wherein:

[0052] The input terminal of the input matching module 101 is used to receive an external radio frequency signal (RFin), and the output terminal of the input matching module 101 is connected to the input terminal of the power amplifier module 102. The input matching module 101 is used to provide input impedance matching for the power amplifier module 102.

[0053] The input terminal of the power amplifier module 102 is connected to the output terminal of the input matching module 101, and the output terminal of the power amplifier module 102 is connected to the input terminal of the output matching module 104. The power amplifier module 102 is used to receive the radio frequency signal after impedance matching through its input terminal, perform power amplification on the radio frequency signal, and then output the amplified radio frequency signal to the output matching module 104 through its output terminal.

[0054] The output terminal of the bias circuit module 103 is connected to the power amplifier module 102, and provides a corresponding bias voltage to the power amplifier module 102 according to the magnitude of the control voltage Vbc input to its input terminal.

[0055] The input terminal of the output matching module 104 is connected to the output terminal of the power amplifier module 102, and is used to provide output impedance matching for the power amplifier module 102. The output terminal of the output matching module 104 is used to output the amplified radio frequency signal to the outside (RFout).

[0056] The input terminal of the power detection module 105 is connected to the output terminal of the power amplifier module 102, and the output terminal of the power detection module 105 is connected to the input terminal of the bias circuit module 103. The power detection module 105 is used to collect the output voltage of the power amplifier module 102 in real time, and outputs the control voltage Vbc, which is used to characterize the voltage magnitude, through its output terminal based on the output voltage. The control voltage Vbc is used to control the bias circuit module 103 to achieve the output of dynamic bias voltage.

[0057] In this embodiment of the invention, the power detection module 105 collects the electrode voltage at the output terminal of the power amplifier module 102, generates a control voltage Vbc, and inputs it to the bias circuit module 103. The purpose is to ensure that during the operation of the power amplifier, when the power of the input radio frequency signal RFin increases, the bias voltage output by the bias circuit module 103 can increase with the increase of the input power.

[0058] To achieve this goal, please refer to the following for details. Figure 4 The power detection module 105 includes a first transistor Q1, a second transistor Q2, a first resistor R1, a second resistor R2, a third resistor R3, a first capacitor C1, and a second capacitor C2, wherein:

[0059] The first terminal of the first capacitor C1 serves as the input terminal of the power detection module 105, and the second terminal of the first capacitor C1 is connected to the emitter of the first transistor Q1.

[0060] The emitter of the first transistor Q1 is connected to the base of the first transistor Q1, and the collector of the first transistor Q1 serves as the output terminal of the power detection module 105.

[0061] The first terminal of the second capacitor C2 is connected to the collector of the first transistor Q1, and the second terminal of the second capacitor C2 is grounded.

[0062] The first end of the first resistor R1 is connected to the base of the first transistor Q1, and the second end of the first resistor R1 is used to connect to the first external power supply voltage VCC1.

[0063] The first end of the second resistor R2 is connected to the base of the first transistor Q1, and the second end of the second resistor R2 is connected to the emitter of the second transistor Q2.

[0064] The emitter of the second transistor Q2 is connected to the base of the second transistor Q2, and the collector of the second transistor Q2 is grounded;

[0065] The first end of the third resistor R3 is connected to the collector of the first transistor Q1, and the second end of the third resistor R3 is grounded.

[0066] In the power detection module 105, the first transistor Q1, which is the core component, is shorted at its base and emitter to act as a base-collector diode. Compared with a base-emitter junction diode that is shorted at its base and collector, it has a larger breakdown voltage. When the output power of the power amplifier module 102 increases (the collector of HBT2 in this embodiment), its output voltage will also increase. Therefore, the base current of the first transistor Q1 will also increase, thereby increasing the control voltage Vbc input to the bias circuit module 103.

[0067] For further details, please refer to Figure 5 The bias circuit module 103 includes a third transistor Q3, a fourth transistor Q4, a fourth resistor R4, a fifth resistor R5, a sixth resistor R6, a seventh resistor R7, an eighth resistor R8, a third capacitor C3, and a fourth capacitor C4, wherein:

[0068] The collector of the third transistor Q3 serves as the input terminal of the bias circuit module 103, the base of the third transistor Q3 is connected to the first terminal of the fourth resistor R4, and the emitter of the third transistor Q3 is connected to the first terminal of the sixth resistor R6.

[0069] The second end of the fourth resistor R4 is connected to the collector of the third transistor Q3;

[0070] The first end of the fifth resistor R5 is connected to the base of the third transistor Q3, and the second end of the fifth resistor R5 is grounded.

[0071] The second terminal of the sixth resistor R6 is grounded;

[0072] The first end of the seventh resistor R7 is connected to the emitter of the third transistor Q3, and the second end of the seventh resistor R7 is connected to the base of the fourth transistor Q4.

[0073] The collector of the fourth transistor Q4 is connected to the collector of the third transistor Q3, and the emitter of the fourth transistor Q4 is connected to the first end of the eighth resistor R8.

[0074] The second end of the eighth resistor R8 serves as the output terminal of the bias circuit module 103.

[0075] The first terminal of the third capacitor C3 is connected to the base of the third transistor Q3, and the second terminal of the third capacitor C3 is connected to the second terminal of the eighth resistor R8.

[0076] The first terminal of the fourth capacitor C4 is connected to the emitter of the fourth transistor Q4, and the second terminal of the fourth capacitor C4 is connected to the second terminal of the eighth resistor R8.

[0077] Based on the structure of the above embodiment, when the external radio frequency signal RFin enters the power amplifier module 102, a portion of the energy is transferred to the base of the third transistor Q3 through the third capacitor C3, thus increasing the collector current of the third transistor Q3. The collector current of the third transistor Q3 is shunted through the sixth resistor R6 and the seventh resistor R7, increasing the base current of the fourth transistor Q4, further increasing the collector current of the fourth transistor Q4. Ultimately, the bias voltage output by the bias circuit module 103 compensates for the decrease in base voltage of the power transistors in the power amplifier module when the input power increases, thereby improving the linearity of the power amplifier.

[0078] In this embodiment of the invention, the third capacitor C3 is a tunable capacitor. Since the third capacitor C3 is essentially used to shunt the radio frequency signal RFin, its capacitance value can be dynamically adjusted according to the usage scenario of the power amplifier during implementation, so as to adjust its shunt capability.

[0079] Specifically, in this embodiment of the invention, the power amplification module 102 includes a first-stage power amplification transistor HBT1, a second-stage power amplification transistor HBT2, and an inter-electrode matching circuit, wherein:

[0080] The base of the first-stage power amplifier transistor HBT1 serves as the input terminal of the power amplifier module 102, the collector of the first-stage power amplifier transistor HBT1 is connected to the input terminal of the inter-electrode matching circuit, and the emitter of the first-stage power amplifier transistor HBT1 is grounded.

[0081] The output terminal of the inter-electrode matching circuit is connected to the base of the second-stage power amplifier transistor HBT2;

[0082] The collector of the second-stage power amplifier transistor HBT2 serves as the output terminal of the power amplifier module 102, and the emitter of the second-stage power amplifier transistor HBT2 is grounded.

[0083] The output terminal of the bias circuit module 103 is connected to the base of the first-stage power amplifier tube HBT1 and the base of the second-stage power amplifier tube HBT2, respectively.

[0084] In this embodiment of the invention, the collector of the first-stage power amplifier transistor HBT1 is connected to a second external power supply voltage VCC2 for power supply, and the collector of the second-stage power amplifier transistor HBT2 is connected to a first external power supply voltage VCC1 for power supply.

[0085] When the power amplifier module 102 is a multi-stage power amplifier tube structure, the voltage detected by the power detection module 105 is the output voltage of the collector of the last stage power amplifier tube. Therefore, the first external power supply voltage VCC1 used by the last stage power amplifier tube (the second stage power amplifier tube HBT2 in this embodiment) is also set as the working voltage used by the power detection module 105.

[0086] Please refer to Figure 3 The power amplifier module 102 further includes a first filter inductor L. f1 First filter capacitor C f1 Second filter inductor L f2 Second filter capacitor C f2 ,in:

[0087] The first filter inductor L f1 The first terminal is connected to the collector of the first stage power amplifier transistor HBT1, and the first filter inductor L f1 The second terminal is connected to the second external power supply voltage VCC2; the first filter capacitor C f1 The first terminal is connected to the first filter inductor L f1 The second end is connected to the first filter capacitor C. f1 The second terminal is grounded;

[0088] The second filter inductor L f2The first terminal is connected to the collector of the second stage power amplifier transistor HBT2, and the second filter inductor L f2 The second terminal is used to connect to the first external power supply voltage VCC1; the second filter capacitor C f2 The first terminal and the second filter inductor L f2 The second terminal is connected to the second filter capacitor C. f2 The second end is grounded.

[0089] First filter inductor L f1 First filter capacitor C f1 With the second filter inductor L f2 Second filter capacitor C f2 An LC filter circuit is constructed at the output of each of the two power amplifier transistors. The LC filter circuit is used to provide a stable DC bias voltage for the power amplifier transistors, prevent radio frequency signals from entering the DC power supply and causing interference, and at the same time ensure the stability of the DC bias voltage.

[0090] The beneficial effects achieved by this invention are that it proposes a power amplifier circuit with dynamic bias. This power amplifier circuit uses an adaptive active linear bias circuit, which can effectively improve the linearity of the power amplifier. In addition, unlike the existing fixed bias design, the architecture of this invention can dynamically adjust the bias state at different power levels to provide corresponding bias voltages for amplifier circuits at different power levels, thereby effectively improving the power amplifier efficiency.

[0091] Example 2

[0092] The present invention also provides a radio frequency (RF) chip, which includes a power amplifier circuit with dynamic bias as described in Embodiment 1 above. It is understood that this RF chip, based on the specific circuit structure of the power amplifier circuit 100 with dynamic bias, can dynamically adjust the bias state at different power levels, thereby effectively improving the power amplifier efficiency. Referring to the technical effects described in the above embodiments, further details are omitted here to avoid repetition.

[0093] It should be noted that, in this document, the terms "comprising," "including," or any other variations thereof are intended to cover non-exclusive inclusion, such that a process, method, article, or apparatus that comprises a list of elements includes not only those elements but also other elements not expressly listed, or elements inherent to such a process, method, article, or apparatus. Unless otherwise specified, an element defined by the phrase "comprising one..." does not exclude the presence of other identical elements in the process, method, article, or apparatus that includes that element.

[0094] The embodiments of the present invention have been described above with reference to the accompanying drawings. The disclosed embodiments are merely preferred embodiments of the present invention. However, the present invention is not limited to the specific embodiments described above. The specific embodiments described above are merely illustrative and not restrictive. Those skilled in the art can make many equivalent changes in form under the guidance of the present invention without departing from the spirit and scope of the claims. All such changes are within the protection scope of the present invention.

Claims

1. A power amplifier circuit with dynamic bias, characterized in that, The power amplifier circuit includes an input matching module, a power amplification module, a bias circuit module, an output matching module, and a power detection module, wherein: The input terminal of the input matching module is used to receive external radio frequency signals, and the output terminal of the input matching module is connected to the input terminal of the power amplifier module. The input matching module is used to provide input impedance matching for the power amplifier module. The input terminal of the power amplifier module is connected to the output terminal of the input matching module, and the output terminal of the power amplifier module is connected to the input terminal of the output matching module. The power amplifier module is used to amplify the power of the radio frequency signal. The output terminal of the bias circuit module is connected to the power amplifier module and provides a bias voltage to the power amplifier module according to the magnitude of the control voltage input to its input terminal; The input terminal of the output matching module is connected to the output terminal of the power amplifier module, and is used to provide output impedance matching for the power amplifier module. The output terminal of the output matching module is used to output the amplified radio frequency signal. The input terminal of the power detection module is connected to the output terminal of the power amplifier module, and the output terminal of the power detection module is connected to the input terminal of the bias circuit module. The power detection module is used to collect the signal power of the radio frequency signal output by the power amplifier module in real time, and output a control voltage to characterize its power level according to the signal power. The control voltage is used to control the bias circuit module to realize the output of dynamic bias voltage. The power detection module includes a first transistor, a second transistor, a first resistor, a second resistor, a third resistor, a first capacitor, and a second capacitor, wherein: The first terminal of the first capacitor serves as the input terminal of the power detection module, and the second terminal of the first capacitor is connected to the emitter of the first transistor. The emitter of the first transistor is connected to the base of the first transistor, and the collector of the first transistor serves as the output terminal of the power detection module. The first terminal of the second capacitor is connected to the collector of the first transistor, and the second terminal of the second capacitor is grounded. The first end of the first resistor is connected to the base of the first transistor, and the second end of the first resistor is used to connect to the first external power supply voltage. The first end of the second resistor is connected to the base of the first transistor, and the second end of the second resistor is connected to the emitter of the second transistor. The emitter of the second transistor is connected to the base of the second transistor, and the collector of the second transistor is grounded; The first end of the third resistor is connected to the collector of the first transistor, and the second end of the third resistor is grounded. The bias circuit module includes a third transistor, a fourth transistor, a fourth resistor, a fifth resistor, a sixth resistor, a seventh resistor, an eighth resistor, a third capacitor, and a fourth capacitor, wherein: The collector of the third transistor serves as the input terminal of the bias circuit module, the base of the third transistor is connected to the first terminal of the fourth resistor, and the emitter of the third transistor is connected to the first terminal of the sixth resistor. The second end of the fourth resistor is connected to the collector of the third transistor; The first end of the fifth resistor is connected to the base of the third transistor, and the second end of the fifth resistor is grounded. The second terminal of the sixth resistor is grounded; The first end of the seventh resistor is connected to the emitter of the third transistor, and the second end of the seventh resistor is connected to the base of the fourth transistor. The collector of the fourth transistor is connected to the collector of the third transistor, and the emitter of the fourth transistor is connected to the first end of the eighth resistor. The second end of the eighth resistor serves as the output terminal of the bias circuit module. The first terminal of the third capacitor is connected to the base of the third transistor, and the second terminal of the third capacitor is connected to the second terminal of the eighth resistor. The first terminal of the fourth capacitor is connected to the emitter of the fourth transistor, and the second terminal of the fourth capacitor is connected to the second terminal of the eighth resistor.

2. The power amplifier circuit with dynamic bias according to claim 1, characterized in that, The power amplification module includes a first-stage power amplification transistor, a second-stage power amplification transistor, and an inter-electrode matching circuit, wherein: The base of the first-stage power amplifier transistor serves as the input terminal of the power amplifier module, the collector of the first-stage power amplifier transistor is connected to the input terminal of the inter-electrode matching circuit, and the emitter of the first-stage power amplifier transistor is grounded. The output terminal of the inter-electrode matching circuit is connected to the base of the second-stage power amplifier tube; The collector of the second-stage power amplifier transistor serves as the output terminal of the power amplifier module, and the emitter of the second-stage power amplifier transistor is grounded. The output terminal of the bias circuit module is connected to the base of the first-stage power amplifier tube and the base of the second-stage power amplifier tube, respectively.

3. The power amplifier circuit with dynamic bias according to claim 2, characterized in that, The collector of the first-stage power amplifier transistor is connected to a second external power supply voltage for power supply, and the collector of the second-stage power amplifier transistor is connected to a first external power supply voltage for power supply.

4. The power amplifier circuit with dynamic bias according to claim 3, characterized in that, The power amplifier module further includes a first filter inductor, a first filter capacitor, a second filter inductor, and a second filter capacitor, wherein: The first end of the first filter inductor is connected to the collector of the first stage power amplifier transistor, and the second end of the first filter inductor is used to connect to the second external power supply voltage; the first end of the first filter capacitor is connected to the second end of the first filter inductor, and the second end of the first filter capacitor is grounded. The first end of the second filter inductor is connected to the collector of the second stage power amplifier transistor, and the second end of the second filter inductor is used to connect to the first external power supply voltage; the first end of the second filter capacitor is connected to the second end of the second filter inductor, and the second end of the second filter capacitor is grounded.

5. The power amplifier circuit with dynamic bias according to claim 1, characterized in that, The third capacitor is a tunable capacitor.

6. A radio frequency chip, characterized in that, The radio frequency chip includes a power amplifier circuit with dynamic bias as described in any one of claims 1-5.

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