Perovskite battery assembly and preparation method, system, power generation device and power consumption device

Abstract

This application relates to perovskite solar cell modules, their fabrication methods, systems, power generation devices, and power consumption devices. The perovskite solar cell module includes multiple perovskite sub-cells and an insulating filling layer. Adjacent perovskite sub-cells are separated by a third scribed groove. The sidewall of the third scribed groove has a contour shape formed by multiple protrusions arranged along the length of the groove. The tilt angle of the protrusions is 15° to 45°, and the distance between two adjacent protrusions is 100 μm to 300 μm. The elastic modulus of the insulating filling layer is 1 to 1.5 times that of the perovskite layer. This perovskite solar cell module exhibits good stability.

Description

Technical Field

[0001] This application relates to the field of solar cells, specifically to perovskite solar cell modules and their preparation methods, systems, power generation devices, and power consumption devices. Background Technology

[0002] With the rapid development of the new energy field, solar cells have been widely used in aerospace, industry, commerce, agriculture, and communications. Perovskite solar cells are devices that convert solar energy into electrical energy using the photoelectric conversion mechanism of perovskite crystal materials. They are currently the third generation of solar cells and have many advantages such as high photoelectric conversion efficiency, simple manufacturing process, and low production cost, and have been extensively studied in recent years.

[0003] Currently, in the fabrication process of perovskite solar cell modules, laser scribing is performed on the bottom electrode layer before depositing each functional layer to form the first scribing groove; laser scribing is performed on each functional layer after depositing the functional layer and before depositing the back electrode layer to form the second scribing groove; and laser scribing is performed on each functional layer on the back electrode layer and the bottom electrode layer after depositing the back electrode layer to form the third scribing groove.

[0004] Defects often exist at the edges of the grooves formed by laser scribing. Under thermal stress or external load, stress concentration can easily occur at the edges of the grooves, leading to edge splitting and damage to the battery assembly, thus affecting the stability of the battery assembly. Summary of the Invention

[0005] This application is made in view of the above-mentioned issues, and one of its objectives is to provide a perovskite solar cell module with good stability, a method for its preparation, a photovoltaic system, a power generation device, and a power consumption device.

[0006] To achieve the above objectives, a first aspect of this application provides a perovskite solar cell assembly, comprising a plurality of perovskite sub-cells and an insulating filling layer, wherein adjacent perovskite sub-cells are spaced apart by a third scribed groove; the sidewall of the third scribed groove has a contour shape formed by a plurality of protrusions arranged along the length direction of the third scribed groove; the inclination angle of the protrusions is 15° to 45°, and the distance between two adjacent protrusions is 100 μm to 300 μm; the perovskite sub-cell includes a perovskite layer, the insulating filling layer is filled in the third scribed groove, and the elastic modulus of the insulating filling layer is 1 to 1.5 times the elastic modulus of the perovskite layer.

[0007] By giving the sidewalls of the third groove between adjacent perovskite sub-cells a contour shape formed by multiple protrusions arranged along the length of the third groove; controlling the distance between adjacent protrusions and the tilt angle of the protrusions within the aforementioned range; and filling the third groove with an insulating filler layer of the aforementioned elastic modulus; under thermal cycling, this contour shape can effectively release the temperature stress and temperature strain at the sidewalls of the third groove, reduce the tensile and compressive strain caused by temperature shock, improve the overall lattice stability of the perovskite film, and reduce the impact of laser scribing defects on cell stability; the insulating filler layer can suppress the lateral outward expansion of the perovskite lattice, alleviate the situation of lattice stretching failure and exceeding the lattice itself, and help maintain the perovskite lattice edge from lateral damage, thus improving the stability of the perovskite layer edge interface. The perovskite cell module described above in this application is less prone to splitting failure at the edge of the groove under thermal stress or external load, exhibiting good stability.

[0008] Among the structural parameters of the protruding structure, the tilt angle and the distance between adjacent protruding structures both affect the stress transmission path at the sidewall of the third scribe line groove, thus impacting the stress dispersion effect. By controlling the tilt angle of the protruding structure and the distance between adjacent protruding structures within the aforementioned range, it is beneficial to disperse the stress at the sidewall of the third scribe line groove, alleviate stress concentration, thereby improving the situation of splitting damage at the edge of the scribe line groove and enhancing the stability of the battery module.

[0009] In any embodiment, the tilt angle of the protruding structure is 25° to 45°. This is more conducive to optimizing the stress transmission path at the sidewall of the third scribe groove and further alleviating stress concentration.

[0010] In any embodiment, the distance between two adjacent protrusions is 150μm to 250μm. This is more conducive to alleviating stress concentration at the sidewall of the third scribe line groove, while also ensuring good structural continuity in the contour shape of the sidewall of the third scribe line groove.

[0011] In any embodiment, the protrusion structure has a dimension of 50μm to 200μm in the width direction of the third scribe groove.

[0012] In any embodiment, the protrusion structure includes one or more of arc-shaped protrusions, trapezoidal protrusions, and triangular protrusions.

[0013] In any embodiment, the protrusion structure extends continuously along the height direction of the third scribed groove. This further enhances the stability of the perovskite layer edge interface.

[0014] In any embodiment, the coefficient of thermal expansion of the insulating filler layer is less than or equal to that of the perovskite layer. This is more conducive to reducing the compression and damage caused by the insulating filler layer to the edges of the perovskite sub-cell when heated.

[0015] In any embodiment, the coefficient of thermal expansion of the insulating filling layer is 0.8 to 1 times that of the perovskite layer. This is more conducive to reducing the compression and damage caused by the insulating filling layer to the edges of the perovskite sub-cell when heated.

[0016] In any embodiment, the insulating filler layer comprises graphene quantum dots and a polymer matrix; based on the total mass of the insulating filler layer, the mass fraction of the graphene quantum dots is 5% to 15%. This is beneficial for the insulating filler layer to have a suitable elastic modulus and coefficient of thermal expansion, while maintaining good insulation properties.

[0017] In any embodiment, the mass fraction of the graphene quantum dots is 5% to 10% based on the total mass of the insulating filler layer. This, in turn, improves the flexibility and insulation properties of the insulating filler layer while maintaining a suitable elastic modulus and coefficient of thermal expansion.

[0018] In any embodiment, the polymer matrix comprises one or more of polymethyl methacrylate, epoxy resin, polyimide, polyvinylidene fluoride, silicone rubber, polycarbonate, and polystyrene. This is advantageous for giving the insulating filler layer good flexibility, as well as suitable elastic modulus and coefficient of thermal expansion.

[0019] In any embodiment, the average particle size of the graphene quantum dots is 10 nm to 100 nm.

[0020] In any embodiment, the perovskite sub-cell includes a bottom electrode layer, a perovskite layer, and a back electrode layer stacked sequentially. The bottom electrode layer has a first scribed groove, and the sidewall of the first scribed groove has a contour shape formed by a plurality of protrusions arranged along the length direction of the first scribed groove. This helps to further improve the stability of the battery assembly by preventing splitting damage at the edge of the scribed groove under thermal stress or external loads.

[0021] In any embodiment, the perovskite layer has a second etched groove, and the sidewall of the second etched groove has a contour shape formed by a plurality of the protruding structures arranged along the length direction of the second etched groove. This helps to further improve the stability of the battery module by preventing splitting damage at the edge of the etched groove under thermal stress or external loads.

[0022] A second aspect of this application provides a method for preparing a perovskite solar cell module, comprising the following steps:

[0023] A perovskite layer is prepared on the bottom electrode layer;

[0024] A back electrode layer is prepared on the surface of the perovskite layer that is opposite to the bottom electrode layer;

[0025] A third laser scribing is performed on the back electrode layer and the perovskite layer to form a third scribing groove;

[0026] An insulating filling layer is formed within the third scribed groove;

[0027] The sidewall of the third scribed groove has a contour shape formed by multiple protrusions arranged along the length of the third scribed groove; the inclination angle of the protrusions is 15°~45°, and the distance between two adjacent protrusions is 100μm~300μm; the elastic modulus of the insulating filling layer is 1~1.5 times that of the elastic modulus of the perovskite layer.

[0028] By giving the sidewall of the third groove the specific contour shape described above, controlling the distance between adjacent protrusions and the tilt angle of the protrusions within the aforementioned range, and filling the third groove with an insulating filler layer of the aforementioned elastic modulus, this contour shape can effectively release the temperature stress and temperature strain at the sidewall of the third groove under thermal cycling, reducing tensile and compressive strain caused by temperature shock, improving the overall lattice stability of the perovskite film, and reducing the impact of laser scribing defects on battery stability. The insulating filler layer can suppress the lateral outward expansion of the perovskite lattice, alleviating the situation where the perovskite lattice undergoes lattice stretching failure and exceeds the lattice itself, which is beneficial to keeping the perovskite lattice edge from lateral damage and improving the stability of the perovskite layer edge interface. This preparation method can improve the situation where the battery module experiences splitting damage at the edge of the groove under thermal stress or external load, thereby improving the stability of the battery module.

[0029] In any embodiment, forming an insulating filler layer within the third etched groove includes the following steps: filling the third etched groove with insulating filler material, and then forming the insulating filler layer within the third etched groove after annealing. This helps to suppress the lateral outward expansion of the perovskite lattice, alleviate the situation where the perovskite lattice undergoes tensile damage and extends beyond the lattice itself, and helps to prevent the perovskite lattice edges from laterally breaking, thus improving the stability of the perovskite layer edge interface. In any embodiment, the annealing temperature is 85℃~100℃; the annealing time is 30min~60min; and the annealing is performed under a protective atmosphere. This helps to fully release the internal stress of the insulating filler layer, improve the interfacial bonding between graphene quantum dots and the polymer matrix, enhance the matching between the insulating filler layer and the perovskite layer, and help reduce the oxidation of the battery module during annealing.

[0030] In any embodiment, the laser used for the third laser scribing is a femtosecond laser. This is advantageous for fabricating high-precision scribing groove structures.

[0031] In any embodiment, the power density of the femtosecond laser is 1×10⁻⁶. 5 W / cm 2 ~1×10 10 W / cm 2 The pulse width is 5fs~500fs, the spot overlap rate is 5%~80%, and the scanning speed is 1000mm / s~8000mm / s. This helps to avoid excessive ablation of the material, reduces the thermal impact of the laser on the perovskite layer, ensures the continuity of the contour shape of the groove sidewall, and thus helps to alleviate stress concentration.

[0032] In any embodiment, before preparing the perovskite layer on the bottom electrode layer, the preparation method further includes the following steps: performing a first laser scribing on the bottom electrode layer to form a first scribing groove; the sidewall of the first scribing groove has a contour shape formed by arranging a plurality of the protrusion structures along the length direction of the first scribing groove.

[0033] In any embodiment, after the perovskite layer is prepared on the bottom electrode layer and before the back electrode layer is prepared on the surface of the perovskite layer opposite to the bottom electrode layer, the preparation method further includes the following steps: performing a second laser scribing on the perovskite layer to form a second scribing groove; the sidewall of the second scribing groove has a contour shape formed by a plurality of the protrusion structures arranged along the length direction of the second scribing groove.

[0034] A third aspect of this application provides a photovoltaic system comprising a perovskite cell module according to the first aspect of this application, or a perovskite cell module prepared by the method for preparing a perovskite cell module according to the second aspect of this application.

[0035] A fourth aspect of this application provides a power generation device, including a perovskite battery module according to the first aspect of this application, or a perovskite battery module prepared by the method for preparing a perovskite battery module according to the second aspect of this application.

[0036] A fifth aspect of this application provides an electrical device comprising a perovskite battery module according to the first aspect of this application, or a perovskite battery module prepared by the method for preparing a perovskite battery module according to the second aspect of this application.

[0037] Details of one or more embodiments of this application are set forth in the following drawings and description. Other features, objects, and advantages of this application will become apparent from the specification, drawings, and claims. Attached Figure Description

[0038] To better describe and illustrate embodiments or examples of the applications disclosed herein, reference may be made to one or more accompanying drawings. Additional details or examples used to describe the drawings should not be considered as limiting the scope of any of the disclosed applications, the embodiments or examples currently described, or the best mode of conduct of these applications as currently understood. Furthermore, throughout the drawings, the same reference numerals denote the same parts. In the drawings:

[0039] Figure 1 This is a schematic diagram of the structure of a perovskite solar cell module according to one embodiment of this application.

[0040] Figure 2 This is a top view schematic diagram of two adjacent perovskite sub-cells in a perovskite solar cell assembly according to one embodiment of this application.

[0041] Figure 3 This is a top view of a perovskite sub-cell with an arc-shaped protrusion structure on the sidewall of the third groove in one embodiment of this application.

[0042] Figure 4 This is a top view of a perovskite sub-cell with a trapezoidal protrusion structure on the sidewall of the third scribed groove in one embodiment of this application.

[0043] Figure 5 This is a top view of a perovskite sub-cell with a triangular protrusion structure on the sidewall of the third groove, according to one embodiment of this application.

[0044] Figure 6 The results are from the edge stress simulation analysis of the perovskite sub-cell in Comparative Example 1 of this application.

[0045] Figure 7 The results are from the edge stress simulation analysis of the perovskite sub-cell in Example 1 of this application.

[0046] Explanation of reference numerals in the attached figures:

[0047] 10. Perovskite solar cell module; 11. Perovskite sub-cell; 12. Third etched groove; 13. Protruding structure; 14. Insulating filling layer; 15. First etched groove; 16. Second etched groove; 17. Substrate; 111. Bottom electrode layer; 112. Perovskite layer; 113. Back electrode layer; 114. Electron transport layer; 115. Hole transport layer. Detailed Implementation

[0048] The following detailed description, with appropriate reference to the accompanying drawings, discloses some embodiments of the perovskite solar cell module, its fabrication method, system, power generation device, and power consumption device of this application. However, unnecessary detailed descriptions may be omitted. For example, detailed descriptions of well-known matters and repetitive descriptions of practically identical structures may be omitted. This is to avoid unnecessarily lengthy descriptions and to facilitate understanding by those skilled in the art. Furthermore, the accompanying drawings and the following description are provided to enable those skilled in the art to fully understand this application and are not intended to limit the subject matter of the claims.

[0049] The "range" disclosed in this application is defined by a lower limit and an upper limit. A given range is defined by selecting a lower limit and an upper limit, which define the boundaries of a particular range. Ranges defined in this way can include or exclude endpoints and can be arbitrarily combined; that is, any lower limit can be combined with any upper limit to form a range. For example, if ranges of 60~120 and 80~110 are listed for a specific parameter, it is also expected that ranges of 60~110 and 80~120 are also included. Furthermore, if minimum range values ​​of 1 and 2 are listed, and if maximum range values ​​of 3, 4, and 5 are listed, then the following ranges are all expected: 1~3, 1~4, 1~5, 2~3, 2~4, and 2~5. In this application, unless otherwise stated, the numerical range "a~b" represents a shortened representation of any combination of real numbers between a and b, where a and b are real numbers. For example, the numerical range "0~5" indicates that all real numbers between "0" and "5" have been listed in this document; "0~5" is simply a shortened representation of these numerical combinations. Furthermore, stating that a parameter is an integer ≥2 is equivalent to disclosing that the parameter is, for example, an integer 2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, etc. For instance, stating that a parameter is an integer selected from "2~10" is equivalent to listing the integers 2, 3, 4, 5, 6, 7, 8, 9, and 10.

[0050] Unless otherwise specified, all embodiments and optional embodiments of this application can be combined to form new technical solutions.

[0051] Unless otherwise specified, all steps in this application may be performed sequentially or randomly, preferably sequentially. For example, the method includes steps (a) and (b), indicating that the method may include steps (a) and (b) performed sequentially, or it may include steps (b) and (a) performed sequentially. For example, the mention that the method may also include step (c) indicates that step (c) may be added to the method in any order. For example, the method may include steps (a), (b), and (c), or it may include steps (a), (c), and (b), or it may include steps (c), (a), and (b), etc.

[0052] In this application, unless otherwise specified, A (e.g., B) means that B is a non-limiting example of A, and it is understood that A is not limited to B.

[0053] In this application, the terms "multiple" or "various" are used unless otherwise specified, referring to a quantity greater than or equal to 2. For example, "one or more" means one or more types.

[0054] The terms “combinations of,” “any combination of,” and “any combination of” used in this article include all suitable combinations of any two or more of the listed items.

[0055] In this document, the term "suitable" as used in "suitable combination", "suitable method", "any suitable method", etc., refers to the technical solution that enables the implementation of this application.

[0056] In this document, terms such as "preferred," "better," "more suitable," and "ideal" are merely descriptions of more effective implementation methods or embodiments, and should be understood not to limit the scope of protection of this application. If multiple "preferred" terms appear in a technical solution, unless otherwise specified and there are no contradictions or mutual constraints, each "preferred" term shall be independent.

[0057] In this application, terms such as "further," "even more," and "particularly" are used for descriptive purposes and to indicate differences in content, but should not be construed as limiting the scope of protection of this application.

[0058] In this application, the terms "first aspect," "second aspect," "third aspect," "fourth aspect," etc., are used for descriptive purposes only and should not be construed as indicating or implying relative importance or quantity, nor should they be construed as implicitly indicating the importance or quantity of the indicated technical features. Moreover, "first," "second," "third," "fourth," etc., serve only as a non-exhaustive enumeration and should be understood not to constitute a closed limitation on quantity.

[0059] In this application, the term "room temperature" generally refers to 4 °C to 35 °C, and may refer to 20 °C ± 5 °C. In some embodiments of this application, room temperature refers to 20 °C to 30 °C.

[0060] In this application, if the unit of a data range is only followed by the right endpoint, it indicates that the units of the left and right endpoints are the same. For example, 3~5 h or 3 h~5 h both indicate that the units of the left endpoint "3" and the right endpoint "5" are both h (hours).

[0061] The weight of the relevant components mentioned in the embodiments of this application can refer not only to the content of each component, but also to the weight ratio between the components. Therefore, any scaling up or down of the content of the relevant components according to the embodiments of this application is within the scope disclosed in the embodiments of this application.

[0062] Currently, in the process of fabricating perovskite solar cell modules, defects are often present at the edges of the grooves formed after laser scribing. This makes it easy for stress concentration to occur at the edges of the grooves under thermal stress or external loads, which can lead to edge splitting and damage to the solar cell module, affecting its stability.

[0063] For this, please refer to Figures 1 to 5 One embodiment of this application provides a perovskite solar cell assembly 10, including a plurality of perovskite sub-cells 11 and an insulating filling layer 14, with adjacent perovskite sub-cells 11 spaced apart by a third scribed groove 12; the sidewall of the third scribed groove 12 has a plurality of protrusions 13 along the length direction of the third scribed groove 12 (e.g., ...). Figure 2 The outline shape formed by the arrangement of the protrusions (in the direction shown in X); the tilt angle of the protrusions 13 is 15°~45°, and the distance between two adjacent protrusions 13 is 100μm~300μm; the perovskite sub-cell 11 includes a perovskite layer 112, an insulating filling layer 14 is filled in the third groove 12, and the elastic modulus of the insulating filling layer 14 is 1~1.5 times the elastic modulus of the perovskite layer 112.

[0064] In the traditional fabrication process of perovskite solar cell module 10, laser is typically used to scribble the back electrode layer 113 and the perovskite layer 112 in a straight line, forming a third scribing groove in a straight line shape. According to density functional theory (DFT) calculations, the electronic structure of the perovskite material changes at the interface of the laser scribing, resulting in uneven local stress distribution on the sidewall of the scribing groove in the perovskite solar cell module 10. This makes the edge of the scribing groove prone to splitting and damage under thermal stress or external load, affecting the stability of the solar cell module.

[0065] The perovskite cell assembly 10 described above in this application has the following features: the sidewall of the third groove 12 between adjacent perovskite sub-cells 11 has a contour shape formed by a plurality of protrusions 13 arranged along the length direction of the third groove 12; the distance between adjacent protrusions 13 and the tilt angle of the protrusions 13 are controlled within the above-mentioned range; and the third groove 12 is filled with an insulating filler layer 14 of the above-mentioned elastic modulus.

[0066] In this way, the sidewall of the third groove 12 forms a contour shape with a protruding structure with specific parameters. This contour shape can realize the continuous distribution of stress field at the sidewall of the third groove 12, so that the mechanical resistance (the material's ability to resist deformation) changes continuously at the sidewall of the third groove 12, thereby alleviating the stress concentration phenomenon.

[0067] Under thermal cycling, this contour shape can effectively release the temperature stress and strain at the sidewall of the third scribe line groove 12, reduce the tensile and compressive strain caused by temperature shock, improve the overall lattice stability of the perovskite film, and reduce the impact of laser scribing defects on battery stability. The specific contour shape at the sidewall of the third scribe line groove 12 can improve the situation where the battery module experiences splitting damage at the edge of the scribe line groove under thermal stress or external load, thus enhancing the stability of the battery module.

[0068] Among the structural parameters of the protruding structure 13, the tilt angle and the distance between adjacent protruding structures 13 both affect the stress transmission path at the sidewall of the third scribe groove 12, thus affecting the stress dispersion effect. By controlling the tilt angle of the protruding structure 13 and the distance between adjacent protruding structures 13 within the above-mentioned range, it is beneficial to disperse the stress at the sidewall of the third scribe groove 12, alleviate stress concentration, thereby improving the situation of splitting damage at the edge of the scribe groove and enhancing the stability of the battery assembly.

[0069] The insulating filling layer 14 filling the third groove 12 can suppress the lateral outward expansion of the perovskite lattice, alleviate the situation where the perovskite lattice is stretched and broken beyond the lattice itself, and help to prevent the perovskite lattice edge from being damaged laterally, thus improving the stability of the perovskite layer edge interface. The perovskite solar cell module 10 described above in this application is not prone to splitting damage at the edge of the groove under thermal stress or external load, and has good stability.

[0070] It should be noted that, as Figure 3 , Figure 4 and Figure 5As shown in L, "the distance between two adjacent protrusions 13" refers to the straight-line distance between corresponding points of two adjacent protrusions 13 of the same type. "The tilt angle of the protrusion 13" refers to the arithmetic mean tilt angle of the protrusion 13. The arithmetic mean tilt angle is defined as follows: An equivalent chord is drawn from the vertex of the protrusion 13 (the highest point of the protrusion) to one edge point of the base of the protrusion 13 (e.g., ...). Figure 3 , Figure 4 and Figure 5 As shown in L1), the angle between the equivalent chord and the base of the protruding structure 13 is denoted as α1; another equivalent chord is drawn using the vertex of the protruding structure 13 and the other edge point of the base of the protruding structure 13 (as shown in L1). Figure 3 , Figure 4 and Figure 5 As shown in L2), the angle between the equivalent chord and the base of the protruding structure 13 is denoted as α2; then the arithmetic mean tilt angle of the protruding structure 13 is (α1+α2) / 2.

[0071] The "base" of the protruding structure 13 refers to the line connecting the lowest points of two adjacent recesses of the protruding structure 13 along the length direction of the third groove 12 (e.g., Figure 3 , Figure 4 and Figure 5 (As shown in L3).

[0072] It is understood that the tilt angle of the protruding structure 13 can be 15°, 16°, 17°, 18°, 19°, 20°, 21°, 22°, 23°, 24°, 25°, 26°, 27°, 28°, 29°, 30°, 31°, 32°, 33°, 34°, 35°, 36°, 37°, 38°, 39°, 40°, 41°, 42°, 43°, 44°, 45°, or any value within the range formed by any two of the above values. The distance between adjacent protrusions 13 can be 100μm, 110μm, 120μm, 130μm, 140μm, 150μm, 160μm, 170μm, 180μm, 190μm, 200μm, 210μm, 220μm, 230μm, 240μm, 250μm, 260μm, 270μm, 280μm, 290μm, 300μm, or any value within the range formed by any two of the above values. The elastic modulus of the insulating filler layer 14 can be 1, 1.1, 1.2, 1.3, 1.4, 1.5 times, or any value within the range formed by any two of the above values, of the elastic modulus of the perovskite layer 112.

[0073] In some embodiments, the tilt angle of the protrusion 13 is 25° to 45°. This is more conducive to optimizing the stress transmission path at the sidewall of the third scribe groove 12 and further alleviating stress concentration. When the tilt angle of the protrusion 13 is too large, the improvement effect on stress dispersion is limited, and it will significantly increase the processing difficulty.

[0074] In some embodiments, the distance between two adjacent protrusions 13 is 150μm to 250μm. This is more conducive to alleviating stress concentration at the sidewall of the third groove 12, while also ensuring that the contour shape of the sidewall of the third groove 12 has good structural continuity.

[0075] In some specific examples, the distance between two adjacent protrusions 13 is 200 μm and the tilt angle of the protrusions 13 is 30°.

[0076] In some embodiments, the protrusion structure 13 is in the width direction of the third groove 12 (e.g. Figure 2 The dimension of the protrusion 13 (in the direction shown by Y) is 50μm to 200μm. Considering the processing accuracy of laser scribing, it is preferable to control the dimension of the protrusion 13 in the width direction of the third scribing groove 12 within the above range. In other words, the dimension of the protrusion 13 in the width direction of the third scribing groove 12 is also the distance between the highest point of the protrusion 13 and the base of the protrusion 13, such as... Figure 3 , Figure 4 and Figure 5 As shown in H.

[0077] It is understood that the dimensions of the protrusion structure 13 in the width direction of the third scribe groove 12 can be 50μm, 60μm, 70μm, 80μm, 90μm, 100μm, 110μm, 120μm, 130μm, 140μm, 150μm, 160μm, 170μm, 180μm, 190μm, 200μm, or any value within the range formed by any two of the above values.

[0078] like Figures 3 to 5 As shown, in some embodiments, the protrusion structure 13 includes one or more of arc-shaped protrusions, trapezoidal protrusions, and triangular protrusions. Multiple such protrusion structures 13 are arranged along the length of the third scribe groove 12 on the sidewall of the third scribe groove 12 to form a serrated outline shape. In some specific examples, the arc-shaped protrusion is a circular arc-shaped protrusion, the trapezoidal protrusion is an isosceles trapezoidal protrusion, and the triangular protrusion is an isosceles triangular protrusion.

[0079] It is understandable that when the protrusion structure 13 is an arc-shaped protrusion, the distance L between adjacent protrusion structures 13 refers to the straight-line distance between the arc apex of two adjacent arc-shaped protrusions. The height H of the arc-shaped protrusion refers to the distance between the arc apex and the arc base. The arithmetic mean tilt angle of the arc-shaped protrusion is calculated by the following method: draw an equivalent chord between the apex of the arc-shaped protrusion and one edge point of the arc-shaped protrusion base, and denot the angle between this equivalent chord and the arc-shaped protrusion base as α1; draw another equivalent chord between the apex of the arc-shaped protrusion and the other edge point of the arc-shaped protrusion base, and denot the angle between this equivalent chord and the arc-shaped protrusion base as α2; the arithmetic mean tilt angle of the arc-shaped protrusion = (α1 + α2) / 2.

[0080] When the protrusion structure 13 is a trapezoidal protrusion, the distance L between adjacent protrusion structures 13 refers to the straight-line distance between corresponding points on the top edges of two adjacent trapezoidal protrusions (i.e., points at the same location). The height H of the trapezoidal protrusion refers to the distance between any point on the top edge of the trapezoid and the trapezoidal base. The equivalent average tilt angle of the trapezoidal protrusion is calculated by the following method: draw an equivalent chord with one endpoint of the top edge of the trapezoid and the edge point of the trapezoidal base on the same side, and the angle between the equivalent chord and the trapezoidal base is denoted as α1; draw another equivalent chord with the other endpoint of the top edge of the trapezoid and the edge point of the trapezoidal base on the same side, and the angle between the equivalent chord and the trapezoidal base is denoted as α2; the arithmetic average tilt angle of the arc-shaped protrusion = (α1 + α2) / 2.

[0081] When the protrusion structure 13 is a triangular protrusion, the distance L between adjacent protrusion structures 13 refers to the straight-line distance between the vertices of two adjacent triangular protrusions. The height H of the triangular protrusion refers to the distance between the vertex of the triangle and the base of the triangle. The equivalent average tilt angle of the triangular protrusion is calculated by the following method: draw an equivalent chord between the vertex of the triangular protrusion and one edge point of the base of the triangular protrusion, and denot the angle between the equivalent chord and the base of the triangular protrusion as α1; draw another equivalent chord between the vertex of the triangular protrusion and the other edge point of the base of the triangular protrusion, and denot the angle between the equivalent chord and the base of the triangular protrusion as α2; the arithmetic average tilt angle of the triangular protrusion = (α1 + α2) / 2.

[0082] In some embodiments, the protrusion structure 13 is arranged continuously along the height direction of the third scribe groove 12. "Continuously along the height direction" means that the protrusion structure 13 is continuously and uninterruptedly arranged along the height direction of the third scribe groove 12, spanning the entire height range of the sidewall of the third scribe groove 12, without any interruption or segmentation. It is understood that during the process of scribing the perovskite layer using a laser, the aforementioned continuously arranged protrusion structure 13 can be formed on the sidewall of the third scribe groove 12. In other words, the dimension of the protrusion structure 13 along the height direction of the third scribe groove 12 is the same as the height of the sidewall of the third scribe groove 12.

[0083] In some embodiments, the coefficient of thermal expansion (CTE) of the insulating filler layer 14 is less than or equal to that of the perovskite layer 112. Thus, when the perovskite cell assembly 10 is heated, the insulating filler layer 14 material filling the third groove 12 will not undergo significant deformation due to thermal stress, resulting in less compression and edge damage to the edges of the perovskite sub-cell 11.

[0084] In some specific examples, the coefficient of thermal expansion of the insulating filler layer 14 is 0.8 to 1 times that of the perovskite layer 112. Controlling the coefficient of thermal expansion of the insulating filler layer 14 relative to the perovskite layer 112 within this range is more beneficial in reducing the compression and damage caused by the insulating filler layer 14 to the edge of the perovskite sub-cell 11 when heated. It is understood that the coefficient of thermal expansion of the insulating filler layer 14 can be any value within the range formed by 0.8, 0.85, 0.9, 0.95, 1 times, or any two of the above values ​​of the coefficient of thermal expansion of the perovskite layer 112.

[0085] In some embodiments, the insulating filler layer 14 comprises graphene quantum dots and a polymer matrix; the mass fraction of graphene quantum dots is 5% to 15% based on the total mass of the insulating filler layer 14. The polymer matrix facilitates a tight bond between the insulating filler layer 14 and the sidewalls of the third scribed groove 12, and imparts good processing performance and flexibility to the insulating filler layer 14; the graphene quantum dots have high thermal conductivity and mechanical strength, and can control the elastic modulus and coefficient of thermal expansion of the insulating filler layer 14.

[0086] Controlling the mass fraction of graphene quantum dots in the insulating filler layer 14 within the aforementioned range is beneficial for the insulating filler layer 14 to possess suitable elastic modulus and coefficient of thermal expansion, while simultaneously maintaining good insulation properties. It is understood that the mass fraction of graphene quantum dots in the insulating filler layer 14 can be 5%, 6%, 7%, 8%, 9%, 10%, 11%, 12%, 13%, 14%, 15%, or any value within the range formed by any two of the aforementioned values.

[0087] In some specific examples, the mass fraction of graphene quantum dots is 5% to 10% based on the total mass of the insulating filler layer 14. In this way, while maintaining the insulating filler layer 14 with a suitable elastic modulus and coefficient of thermal expansion, it is more conducive to improving the flexibility and insulation of the insulating filler layer 14.

[0088] In some embodiments, the polymer matrix includes one or more of polymethyl methacrylate (PMMA), epoxy resin (EP), polyimide (PI), polyvinylidene fluoride (PVDF), silicone rubber, polycarbonate (PC), and polystyrene (PS). Using the above-mentioned polymers as the polymer matrix material of the insulating filler layer 14 is beneficial to giving the insulating filler layer 14 good flexibility and suitable elastic modulus and coefficient of thermal expansion.

[0089] In some embodiments, the average particle size of the graphene quantum dots is 10 nm to 100 nm. It is understood that the average particle size of the graphene quantum dots can be 10 nm, 20 nm, 30 nm, 40 nm, 50 nm, 60 nm, 70 nm, 80 nm, 90 nm, 100 nm, or any value within the range formed by any two of the above values.

[0090] In some embodiments, the perovskite sub-cell 11 includes a bottom electrode layer 111, a perovskite layer 112, and a back electrode layer 113 stacked sequentially. The bottom electrode layer 111 has a first scribed groove 15, the sidewall of which has a contour shape formed by a plurality of protrusions 13 arranged along the length of the first scribed groove 15. By adopting the aforementioned contour shape with a plurality of protrusions 13 on the sidewall of the first scribed groove 15, it is beneficial to further improve the stability of the battery assembly by preventing splitting damage at the edge of the scribed groove under thermal stress or external load.

[0091] In some embodiments, the perovskite layer 112 has a second scribed groove 16, the sidewall of which has a profile shape formed by a plurality of protrusions 13 arranged along the length of the second scribed groove 16. By adopting the aforementioned profile shape with a plurality of protrusions 13 on the sidewall of the second scribed groove 16, it is beneficial to further improve the situation where the battery assembly experiences splitting damage at the edge of the scribed groove under thermal stress or external load, thereby further improving the stability of the battery assembly.

[0092] It is understood that the protruding structure 13 on the sidewall of the first scribe groove 15 can be the same as the protruding structure 13 on the sidewall of the third scribe groove 12 described above in this application; similarly, the protruding structure 13 on the sidewall of the second scribe groove 16 can also be the same as the protruding structure 13 on the sidewall of the third scribe groove 12 described above in this application. Further details will not be elaborated here.

[0093] Please see Figure 1In some embodiments, the perovskite solar cell assembly 10 further includes a substrate 17, which may be made of glass. Individual perovskite sub-cells 11 are arranged side-by-side on the substrate 17 and spaced apart by a third etched groove 12. The perovskite sub-cell 11 may also include an electron transport layer 114 and a hole transport layer 115. The bottom electrode layer 111, electron transport layer 114, perovskite layer 112, hole transport layer 115, and back electrode layer 113 are sequentially stacked on the substrate 17 to form the perovskite sub-cell 11; or the bottom electrode layer 111, hole transport layer 115, perovskite layer 112, electron transport layer 114, and back electrode layer 113 are sequentially stacked on the substrate 17 to form the perovskite sub-cell 11.

[0094] In some embodiments, the material of the electron transport layer 114 includes at least one of imide compounds, quinone compounds, fullerenes and their derivatives, metal oxides, semiconductor material oxides, titanates, fluorides and their derivatives, and materials obtained by doping or passivation. Exemplarily, the imide compounds include at least one of phthalimide, succinimide, N-bromosuccinimide, glutarimide, or maleimide. Exemplarily, the quinone compounds include at least one of benzoquinone, naphthoquinone, phenanthrenequinone, or anthraquinone. Exemplarily, the fullerenes and their derivatives include fullerene C 60 Fullerene C 70 PCBM([6,6]-phenyl-C 61 methyl butyrate), [6,6]-phenyl C 71 Methyl butyrate (PC) 71 At least one of BM. Exemplarily, the metal element in the metal oxide includes at least one of Mg, Cd, Zn, In, Pb, W, Sb, Bi, Hg, Ti, Ag, Mn, Fe, V, Sn, Zr, Sr, Ga, and Cr; optionally, the metal oxide includes at least one of tin oxide (SnO2), zinc oxide (ZnO), and titanium oxide (TiO2). Exemplarily, the semiconductor material oxide includes silicon oxide. Exemplarily, the titanate includes at least one of strontium titanate and calcium titanate. Exemplarily, the fluoride includes at least one of lithium fluoride and calcium fluoride.

[0095] In some embodiments, the hole transport layer 115 is made of materials that independently include [4-(3,6-dimethoxy-9H-carbazole-9-yl)butyl]phosphonic acid, poly[bis(4-phenyl)(2,4,6-trimethylphenyl)amine], poly-3-hexylthiophene, triphenylamine with a triphenylene core, 3,4-ethylenedioxythiophene-methoxytriphenylamine, N-(4-aniline)carbazole-spirobisfluorene, poly(3,4-ethylenedioxythiophene):poly(styrenesulfonate), polythiophene, nickel oxide, molybdenum oxide, cuprous iodide, cuprous oxide and its derivatives. One or more; and / or including one or more of the following materials that have been doped or passivated: [4-(3,6-dimethoxy-9H-carbazole-9-yl)butyl]phosphonic acid, poly[bis(4-phenyl)(2,4,6-trimethylphenyl)amine], poly-3-hexylthiophene, triphenylamine with a triphenylene core, 3,4-ethylenedioxythiophene-methoxytriphenylamine, N-(4-aniline)carbazole-spirobisfluorene, poly(3,4-ethylenedioxythiophene):poly(styrene sulfonate), polythiophene, nickel oxide, molybdenum oxide, cuprous iodide, cuprous oxide, and carbazole phosphate.

[0096] In some embodiments, the perovskite layer 112 comprises a material with the chemical formula ABX3 or A2CDX6; wherein A comprises CH3(NH2)2. + CH(NH2)2 + CH3NH2 + Li + Na + K + 、Rb + Cs + One or more of the following; B includes Pb 2+ Be 2+ Sn 2+ Mg 2+ Ca 2+ 、Sr 2+ Ba 2+ Zn 2+ 、Ge 2+ Fe 2+ Co 2+ Ni 2+ One or more of them; X includes Cl - ,Br - I - SCN - CNO - OCN - OSCN - SH - OH - CP - CN - SeCN - N3- NO2 - One or more of the following; C includes Ag + ;D includes Bi 3+ Sb 3+ In 3 + One or more of them.

[0097] In some embodiments, the material of the back electrode layer 113 includes one or more of gold, silver, copper, aluminum, nickel, chromium, bismuth, platinum, magnesium, molybdenum, tungsten and their alloys, and may also include one or more of indium tin oxide, lanthanide-doped indium oxide, boron-doped zinc oxide, fluorine-doped tin oxide, indium-doped tungsten oxide, indium-doped zinc oxide, aluminum-doped zinc oxide, and gallium zinc oxide.

[0098] In some embodiments, the material of the bottom electrode layer 111 includes one or more of indium tin oxide, lanthanide-doped indium oxide, boron-doped zinc oxide, fluorine-doped tin oxide, indium-doped tungsten oxide, indium-doped zinc oxide, aluminum-doped zinc oxide, and gallium zinc oxide.

[0099] In some embodiments, the perovskite solar cell module 10 described above also includes a photovoltaic glass layer, an adhesive layer, and a backsheet.

[0100] The solar cell has an adhesive layer on each of its two surfaces. A backsheet is provided on the surface of one adhesive layer away from the solar cell, and a photovoltaic glass layer is provided on the surface of the other adhesive layer away from the solar cell.

[0101] The photovoltaic glass layer and backsheet are used to protect the perovskite sub-cells 11, and they have the functions of sealing, insulation and waterproofing; the adhesive layer serves to bond the photovoltaic glass layer to the cell and the backsheet to the cell.

[0102] Optionally, the photovoltaic glass layer is made of tempered glass, the backsheet is made of TPT (polyvinyl fluoride) or TPE (thermoplastic elastomer), and the adhesive layer is made of EVA (polyethylene-polyvinyl acetate copolymer).

[0103] Furthermore, the perovskite solar cell module 10 also includes a junction box and an outer frame.

[0104] The junction box is used to protect the power generation system of the entire perovskite solar cell module 10. It is equivalent to a current transfer station. When a cell short-circuits, the junction box will automatically disconnect the short-circuited cell string.

[0105] The outer frame serves to support and protect the entire perovskite solar cell module 10. The frame can be made of aluminum alloy, which has excellent strength and corrosion resistance.

[0106] Furthermore, silicone is used to bond and seal the connections between the frame and other parts of the perovskite solar cell module 10. The perovskite solar cell module 10 can convert solar energy into electrical energy, which can then be stored in a battery or used to power a load.

[0107] In some of these embodiments, the perovskite battery module 10 described above is a solar panel.

[0108] One embodiment of this application provides a method for preparing a perovskite solar cell module 10, the method comprising the following steps S100 to S300:

[0109] Step S100: Prepare a perovskite layer 112 on the bottom electrode layer 111.

[0110] Step S200: Prepare a back electrode layer 113 on the surface of the perovskite layer 112 that is opposite to the bottom electrode layer 111.

[0111] Step S300: Perform a third laser scribing on the back electrode layer 113 and the perovskite layer 112 to form a third scribe groove 12; wherein, the sidewall of the third scribe groove 12 has a contour shape formed by multiple protrusions 13 arranged along the length direction of the third scribe groove 12; the tilt angle of the protrusions 13 is 15°~45°, and the distance between adjacent protrusions 13 is 100μm~300μm.

[0112] By giving the sidewall of the third groove 12 the specific contour shape described above, and by controlling the distance between adjacent protrusions 13 and the tilt angle of the protrusions 13 within the above range, the contour shape enables the continuous distribution of the stress field at the sidewall of the third groove 12, so that the mechanical impedance at the sidewall of the third groove 12 exhibits a continuous change, thereby alleviating the stress concentration phenomenon.

[0113] Under thermal cycling, this contour shape can effectively release the temperature stress and strain at the sidewall of the third scribe line groove 12, reduce the tensile and compressive strain caused by temperature shock, improve the overall lattice stability of the perovskite film, and reduce the impact of laser scribing defects on battery stability. The specific contour shape at the sidewall of the third scribe line groove 12 can improve the situation where the battery module experiences splitting damage at the edge of the scribe line groove under thermal stress or external load, thereby improving the stability of the battery module.

[0114] In some embodiments, after forming the third groove 12, the preparation method further includes the following steps: filling the third groove 12 with an insulating filler, and forming an insulating filling layer 14 in the third groove 12 after annealing; the elastic modulus of the insulating filling layer 14 is greater than or equal to the elastic modulus of the perovskite layer 112. This helps to suppress the lateral outward expansion of the perovskite lattice, alleviate the situation of lattice stretching failure and exceeding the lattice itself, and help to prevent the perovskite lattice edges from being laterally destroyed, thereby improving the stability of the edge interface of the perovskite layer 112. It is understood that the material of the insulating filling layer 14 is as described above, and will not be repeated here.

[0115] In this process, after filling the third groove 12 with insulating filler, an annealing treatment is performed. At the annealing temperature, the mobility of the polymer matrix molecular chain segments is enhanced, which can promote the release of internal stress in the insulating filler. Furthermore, new chemical bonds are formed at the interface between the graphene quantum dots and the polymer matrix, reducing the interfacial energy between them. The lattice of the perovskite layer 112 undergoes local adjustment during annealing, which helps reduce lattice mismatch stress. Annealing promotes the interfacial bonding between the graphene quantum dots and the polymer matrix, facilitates the formation of a more uniform dispersed phase, and improves the matching between the insulating filler layer 14 and the perovskite layer 112.

[0116] In some embodiments, the annealing temperature is 85°C to 100°C; the annealing time is 30 min to 60 min; and the annealing is performed under a protective atmosphere. Annealing at the above temperature and time helps to fully release the internal stress of the insulating filler layer 14, improve the interfacial bonding between the graphene quantum dots and the polymer matrix, and enhance the compatibility between the insulating filler layer 14 and the perovskite layer 112. Furthermore, this temperature is within the normal operating temperature range of the perovskite battery module 10 and will not adversely affect the performance of the battery module. Annealing under a protective atmosphere helps to reduce oxidation of the battery module during the annealing process.

[0117] It is understood that the annealing temperature can be 85℃, 86℃, 87℃, 88℃, 89℃, 90℃, 91℃, 92℃, 93℃, 94℃, 95℃, 96℃, 97℃, 98℃, 99℃, 100℃, or any value within the range formed by any two of the above values. The annealing time can be 30 min, 32 min, 35 min, 38 min, 40 min, 42 min, 45 min, 48 min, 50 min, 52 min, 55 min, 58 min, 60 min, or any value within the range formed by any two of the above values. The protective atmosphere can be nitrogen.

[0118] In some embodiments, the laser used for the third laser scribing is a femtosecond laser. Femtosecond lasers have advantages such as a small heat-affected zone and high processing precision, which is beneficial for fabricating high-precision scribing groove structures.

[0119] Furthermore, the power density of the femtosecond laser is 1×10⁻⁶. 5 W / cm 2 ~1×10 10 W / cm 2 The femtosecond laser pulse width is 5 fs to 500 fs, the spot overlap rate is 5% to 80%, and the scanning speed is 1000 mm / s to 8000 mm / s. Controlling the power density of the femtosecond laser within these ranges during laser scribing helps avoid excessive ablation of the material; controlling the pulse width within these ranges helps reduce the thermal impact of the laser on the perovskite layer 112; and controlling the spot overlap rate and scanning speed within these ranges helps ensure the continuity of the contour shape of the scribing groove sidewalls, thus further mitigating stress concentration.

[0120] Understandably, the power density of a femtosecond laser can be 1×10⁻⁶. 5 W / cm 2 5×10 5 W / cm 2 1×10 6 W / cm 2 5×10 6 W / cm 2 1×10 7 W / cm 2 5×10 7 W / cm 2 1×10 8 W / cm 2 5×10 8 W / cm 2 1×10 9 W / cm 2 5×10 9 W / cm 2 1×10 10 W / cm 2The pulse width of the femtosecond laser can be 5fs, 50fs, 100fs, 200fs, 250fs, 280fs, 300fs, 350fs, 380fs, 400fs, 450fs, 480fs, 500fs, or any value within the range formed by any two of the above values; the spot overlap rate of the femtosecond laser can be 5%, 10%, 20%, 30%, 40%, 50%, 60%, 70%, 80%, or any value within the range formed by any two of the above values; the scanning speed of the femtosecond laser can be 1000mm / s, 2000mm / s, 3000mm / s, 4000mm / s, 5000mm / s, 6000mm / s, 7000mm / s, 8000mm / s, or any value within the range formed by any two of the above values.

[0121] In some embodiments, before fabricating the perovskite layer 112 on the bottom electrode layer 111, the fabrication method further includes the following steps: performing a first laser scribing on the bottom electrode layer 111 to form a first scribe groove 15; the sidewall of the first scribe groove 15 has a contour shape formed by a plurality of protrusions 13 arranged along the length direction of the first scribe groove 15. Thus, after fabricating the perovskite layer 112 on the bottom electrode layer 111, the perovskite material fills the first scribe groove 15.

[0122] In some embodiments, after the perovskite layer 112 is formed on the bottom electrode layer 111, and before the back electrode layer 113 is formed on the surface of the perovskite layer 112 opposite to the bottom electrode layer 111, the fabrication method further includes the following steps: performing a second laser scribing on the perovskite layer 112 to form a second scribe groove 16; the sidewall of the second scribe groove 16 has a contour shape formed by a plurality of protrusions 13 arranged along the length direction of the second scribe groove 16. Thus, after the back electrode layer 113 is formed on the surface of the perovskite layer 112 opposite to the bottom electrode layer 111, the material of the back electrode will fill the second scribe groove 16.

[0123] Understandably, because the functional layer materials etched by the first, second, and third laser scribing lines are different, the laser processing parameters are different when forming a scribing groove with a contour shape formed by multiple protruding structures 13 arranged along the length direction of the second scribing groove 16.

[0124] In some specific examples, the laser power density of the first laser scribing can be 1×10⁻⁶. 9 W / cm 2 ~1×10 10 W / cm 2The pulse width can be 10 fs to 500 fs, the spot overlap rate can be 60% to 80%, and the scanning speed can be 1000 mm / s to 3000 mm / s. The laser power density of the second laser scribing can be 1 × 10⁻⁶. 7 W / cm 2 ~1×10 8 W / cm 2 The pulse width can be 10 fs to 300 fs, the spot overlap rate can be 30% to 50%, and the scanning speed can be 3000 mm / s to 5000 mm / s. The laser power density for the third laser scribing can be 1 × 10⁻⁶. 5 W / cm 2 ~1×10 6 W / cm 2 The pulse width can be 5fs~200fs, the spot overlap rate can be 5%~10%, and the scanning speed can be 5000mm / s~8000mm / s.

[0125] One embodiment of this application provides a photovoltaic system including the perovskite cell module 10 described above, or a perovskite cell module 10 prepared by the preparation method described above.

[0126] The photovoltaic system utilizes the perovskite sub-cells 11 in the perovskite cell module 10 to directly convert solar radiation energy into electrical energy, which is highly efficient and stable; furthermore, the photovoltaic system is a photovoltaic power generation system.

[0127] Perovskite solar cell modules are the core component of a photovoltaic power generation system. The photovoltaic system mentioned above includes one or more perovskite solar cell modules 10, which can be selected according to specific application scenarios. Furthermore, when the photovoltaic system includes multiple perovskite solar cell modules 10, the multiple perovskite solar cell modules 10 form a photovoltaic array.

[0128] The aforementioned photovoltaic system can be a stand-alone photovoltaic power generation system or a grid-connected photovoltaic power generation system.

[0129] An independent photovoltaic (PV) power generation system includes a PV array, battery bank, charge controller, power electronic converter (inverter), and load. Its working principle is that solar radiation energy is first converted into electrical energy by the PV array, then converted by the power electronic converter to supply power to the load. Simultaneously, excess electrical energy is stored as chemical energy in an energy storage device after passing through the charge controller. Thus, when sunlight is insufficient, the energy stored in the battery can be converted into 220V AC, 50Hz electrical energy through the power electronic inverter, filter, and power frequency transformer to supply AC loads.

[0130] A grid-connected photovoltaic (PV) power generation system includes a photovoltaic array, a high-frequency DC / DC boost circuit, a power electronic converter (inverter), and system monitoring. Its working principle is that solar radiation energy is converted by the photovoltaic array, then converted into high-voltage DC by a high-frequency DC converter, and finally inverted by the power electronic inverter to output a sinusoidal alternating current to the grid that is in phase with the grid voltage.

[0131] The two photovoltaic power generation systems mentioned above each have their own characteristics and can be selected according to the specific application scenario.

[0132] One embodiment of this application provides a power generation device, including the perovskite battery module 10 described above, or a perovskite battery module 10 prepared by the preparation method described above.

[0133] One embodiment of this application provides an electrical device, including the perovskite battery module 10 described above, or a perovskite battery module 10 prepared by the preparation method described above.

[0134] In some embodiments, the power-consuming device is a common device including the perovskite battery module 10 of this application, such as those in the fields of communications, transportation, industry and agriculture, and lighting. Specifically, the power-consuming device may include, for example, satellites, communication equipment, traffic lights, lighthouses, wireless telephone booths, monitoring equipment in the field of oil drilling, power systems, camping lights, electric vehicles, electronic device chargers, building curtain walls, etc.

[0135] The following describes embodiments of this application. The embodiments described below are exemplary and are only used to explain this application, and should not be construed as limiting this application. Where specific techniques or conditions are not specified in the embodiments, they are performed according to the techniques or conditions described in the literature in this field or according to the product instructions. Reagents or instruments used, unless otherwise specified, are all conventional products that can be obtained commercially.

[0136] Example 1:

[0137] (1) Preparation of bottom electrode layer

[0138] The bottom electrode layer is disposed on the glass substrate. The material of the bottom electrode layer is indium tin oxide (ITO). The glass substrate with the bottom electrode layer is cleaned sequentially with acetone, alcohol and deionized water, and then dried for later use.

[0139] (2) First laser scribing

[0140] A femtosecond laser is used to scribing the bottom electrode layer, forming a first scribed groove. The sidewall of the first scribed groove has a contour shape formed by multiple arc-shaped protrusions arranged along the length of the groove. The power density of the femtosecond laser is 1×10⁻⁶.9 ~1×10 10 W / cm 2 The pulse width of a femtosecond laser is 10~500 fs, the spot overlap rate of a femtosecond laser is 60%~80%, and the scanning speed of a femtosecond laser is 1000~3000 mm / s.

[0141] The inclination angle of the arc-shaped protrusion on the side wall of the first scribe groove is 30°, the distance between adjacent arc-shaped protrusions is 200μm, and the height of the arc-shaped protrusion is 100μm.

[0142] (3) Fabrication of electron transport layer

[0143] A 20 nm layer of SnO2 was fabricated on the aforementioned bottom electrode layer using an atomic layer deposition (ALD) apparatus to form an electron transport layer. Simultaneously, the SnO2 filled the first etched groove.

[0144] (4) Preparation of perovskite layer

[0145] 3 mg of FAI, 59 mg of FABr, 46 mg of CsI, 25 mg of CsBr, 428 mg of PbI2 and 209 mg of PbBr2 were added to 1 mL of a mixture of DMF and DMSO (DMF to DMSO volume ratio of 3:1). The mixture was stirred at 600 rpm for 8 h on a magnetic stirrer and then filtered to obtain a perovskite precursor solution. 100 μL of the above perovskite precursor solution was spin-coated onto the electron transport layer (first at a spin speed of 2000 rpm and an acceleration of 200 rpm / s for 10 s, then at a spin speed of 4000 rpm and an acceleration of 1000 rpm / s for 25 s). Then, 200 μL of chlorobenzene was added dropwise onto the spin-coated perovskite precursor solution, followed by another spin-coating of the perovskite precursor solution (at a spin speed of 4000 rpm for 15 s). The mixture was then transferred to a hot plate and annealed at 100 °C for 15 min to form a perovskite layer with a thickness of 600 nm.

[0146] (5) Preparation of hole transport layer

[0147] [4-(3,6-dimethoxy-9H-carbazole-9-yl)butyl]phosphoric acid (MeO-4PACz) was added to an ethanol solvent and stirred. The ethanol solution of MeO-4PACz was then spin-coated onto a perovskite layer (spin-coating speed 4000 rpm, spin-coating time 30 s), and then transferred to a hot plate and annealed at 100 °C for 10 min to form a hole transport layer with a thickness of 1 nm.

[0148] (6) Second laser scribing

[0149] A femtosecond laser is used to perform a second laser scribing on the hole transport layer, perovskite layer, and electron transport layer, forming a second scribed groove. The sidewall of this second scribed groove has a contour shape formed by multiple arc-shaped protrusions arranged along the length of the groove. The power density of the femtosecond laser is 1×10⁻⁶. 7 ~1×10 8 W / cm 2 The pulse width of a femtosecond laser is 10~300 fs, the spot overlap rate of a femtosecond laser is 30%~50%, and the scanning speed of a femtosecond laser is 3000~5000 mm / s.

[0150] The inclination angle of the arc-shaped protrusion on the side wall of the second scribe groove is 30°, the distance between adjacent arc-shaped protrusions is 200μm, and the height of the arc-shaped protrusion is 100μm.

[0151] (7) Preparation of back electrode layer

[0152] A 100nm layer of metallic copper (Cu) is deposited on the aforementioned hole transport layer to form the back electrode layer. Simultaneously, the metallic copper fills the second etched groove.

[0153] (8) Third laser scribing

[0154] A femtosecond laser is used to perform a third laser scribing on the back electrode layer, hole transport layer, perovskite layer, and electron transport layer, forming a third scribed groove. The sidewall of this third scribed groove has a contour shape formed by multiple arc-shaped protrusions arranged along the length of the groove. The power density of the femtosecond laser is 1×10⁻⁶. 5 ~1×10 6 W / cm 2 The pulse width of a femtosecond laser is 5~200 fs, the spot overlap rate of a femtosecond laser is 5%~10%, and the scanning speed of a femtosecond laser is 5000~8000 mm / s.

[0155] The inclination angle of the arc-shaped protrusion on the side wall of the third groove is 30°, the distance between adjacent arc-shaped protrusions is 200μm, and the height of the arc-shaped protrusion is 100μm.

[0156] (9) Preparation of insulating filler layer

[0157] A composite slurry containing graphene quantum dots and PMMA was filled into the third groove and cured at 100°C for 20 min to form an insulating filling layer. The perovskite solar cell module prepared above was then annealed at 100°C for 30 min. The insulating filling layer contained 10% graphene quantum dots by mass, 90% PMMA by mass, and had an average particle size of 30 nm for the graphene quantum dots.

[0158] Example 2:

[0159] This embodiment is basically the same as embodiment 1, except that in step (8), the process conditions of femtosecond laser scribing are adjusted so that the inclination angle of the arc-shaped protrusion structure on the side wall of the third scribing groove is 15°.

[0160] Example 3:

[0161] This embodiment is basically the same as embodiment 1, except that in step (8), the process conditions of femtosecond laser scribing are adjusted so that the inclination angle of the arc-shaped protrusion structure on the side wall of the third scribing groove is 45°.

[0162] Example 4:

[0163] This embodiment is basically the same as embodiment 1, except that in step (8), the process conditions of femtosecond laser scribing are adjusted so that the distance between adjacent arc-shaped protrusions on the side wall of the third scribing groove is 100μm.

[0164] Example 5:

[0165] This embodiment is basically the same as embodiment 1, except that in step (8), the process conditions of femtosecond laser scribing are adjusted so that the distance between adjacent arc-shaped protrusions on the side wall of the third scribing groove is 300μm.

[0166] Example 6:

[0167] This embodiment is basically the same as embodiment 1, except that in step (8), the process conditions of femtosecond laser scribing are adjusted so that the height of the arc-shaped protrusion structure on the side wall of the third scribing groove is 50μm.

[0168] Example 7:

[0169] This embodiment is basically the same as embodiment 1, except that: in step (8), the process conditions of femtosecond laser scribing are adjusted so that the protrusion structure on the side wall of the third scribing groove is a trapezoidal protrusion; the inclination angle of the trapezoidal protrusion is 30°, the distance between adjacent trapezoidal protrusions is 200μm, the height of the trapezoidal protrusion is 100μm, and the top edge length of the trapezoidal protrusion is 100μm.

[0170] Example 8:

[0171] This embodiment is basically the same as embodiment 1, except that: in steps (2) and (6), a picosecond laser is used to scribing lines to form a straight first scribing groove and a second scribing groove.

[0172] Comparative Example 1:

[0173] This comparative example is basically the same as Example 8, except that step (9) of preparing the insulating filler layer is not performed.

[0174] Comparative Example 2:

[0175] This comparative example is basically the same as comparative example 1, except that in step (8), a picosecond laser is used to scribing lines to form a straight third scribing groove.

[0176] Comparative Example 3:

[0177] This comparative example is basically the same as comparative example 1, except that in step (8), the process parameters of the femtosecond laser scribing are adjusted so that the inclination angle of the arc-shaped protrusion structure on the side wall of the third scribing groove is 10°.

[0178] Comparative Example 4:

[0179] This comparative example is basically the same as Comparative Example 1, except that in step (8), the process parameters of the femtosecond laser scribing are adjusted so that the distance between adjacent arc-shaped protrusions on the side wall of the third scribing groove is 50 μm.

[0180] Comparative Example 5:

[0181] This comparative example is basically the same as Comparative Example 1, except that in step (8), the process parameters of the femtosecond laser scribing are adjusted so that the distance between adjacent arc-shaped protrusions on the side wall of the third scribing groove is 400 μm.

[0182] Finite element method (FEM) simulations were performed on the perovskite sub-cells in the battery modules of Comparative Example 1 and Example 1 to examine the interface stress concentration at the edge of the third scribe line groove of the perovskite sub-cell. The simulation results for the perovskite sub-cell of Comparative Example 1 are as follows: Figure 6 As shown; the simulation results of the perovskite sub-cell in Example 1 are as follows. Figure 7 As shown in the figure. By comparison, it can be seen that the average edge stress of the perovskite sub-cell in Example 1 is significantly reduced, and the edge of the perovskite sub-cell is less prone to splitting damage.

[0183] Performance testing:

[0184] (1) Battery module edge fracture energy test

[0185] The single-sided notched beam method (SENB) was used for testing: a notched beam specimen with laser-etched lines was prepared, and a three-point bending load was applied to allow the crack to propagate along the etched edge. The fracture energy was calculated using load-displacement curves. The specific steps are as follows:

[0186] 1. Sample preparation: Cut the battery cells into beams of 20mm×5mm×0.5mm, ensuring that the laser scribing is a unique notch (depth a controlled between 1mm and 2mm).

[0187] 2. Testing environment: Dry glove box (humidity <1%) to avoid perovskite degradation;

[0188] 3. Loading parameters: Loading rate 0.01mm / min~0.1mm / min, record the maximum load Pmax and displacement δmax;

[0189] The formula for calculating fracture energy is: Gc = U / [B × (Wa)]; where Gc is the fracture energy, in J / m³. 2 U is the total area enclosed by the load-displacement curve from the start of loading to the complete fracture of the specimen, in J; B is the thickness of the specimen, in m; W is the width of the test, in m; a is the length of the pre-made notch or crack, in m; Wa represents the effective ligament length of the specimen. .

[0190] (2) Battery component stability test

[0191] Perform damp heat aging tests (double 85 test) according to the method in IEC61215-2-2021.

[0192] Test conditions: 85℃ / 85% RH. This test measures the time required for the efficiency of the battery module to decrease by 10% compared to its initial efficiency after aging.

[0193] The battery modules of the above embodiments and comparative examples were subjected to performance tests, and the parameters and performance test results of the battery modules are shown in Table 1.

[0194] Table 1

[0195]

[0196] As shown in Table 1, in each embodiment of this application, the sidewall of the third scribe groove has a specific contour shape; and the distance between adjacent protrusions and the tilt angle of the protrusions are controlled within a specific range in this application; the edge fracture energy of the battery assembly is high, and it has good stability.

[0197] In Comparative Example 1, the third groove of the battery module lacks an insulating filler layer, resulting in a significant decrease in the module's stability. In Comparative Example 2, the battery module uses traditional straight grooves, leading to a significant reduction in edge fracture energy and stability. In Comparative Examples 3 and 4, the tilt angle of the protruding structures in the third groove is either too small or too large, further reducing the module's edge fracture energy and stability. In Comparative Example 5, the distance between adjacent protruding structures in the third groove is too large, also significantly reducing the module's edge fracture energy and stability.

[0198] The technical features of the above embodiments can be combined in any way. For the sake of brevity, not all possible combinations of the technical features in the above embodiments are described. However, as long as there is no contradiction in the combination of these technical features, they should be considered to be within the scope of this specification.

[0199] The embodiments described above are merely illustrative of several implementations of the present invention, and while the descriptions are relatively specific and detailed, they should not be construed as limiting the scope of the invention patent. It should be noted that those skilled in the art can make various modifications and improvements without departing from the concept of the present invention, and these all fall within the protection scope of the present invention. Therefore, the protection scope of this invention patent should be determined by the appended claims, and the specification and drawings can be used to interpret the content of the claims.

Claims

1. A perovskite solar cell module, characterized in that, The device includes multiple perovskite sub-cells and an insulating filling layer, with adjacent perovskite sub-cells spaced apart by a third scribed groove. The sidewall of the third scribed groove has a contour shape formed by multiple protrusions arranged along the length of the groove. The inclination angle of the protrusions is 15° to 45°, and the distance between two adjacent protrusions is 100 μm to 300 μm. Each perovskite sub-cell includes a perovskite layer, and the insulating filling layer fills the third scribed groove. The elastic modulus of the insulating filling layer is 1 to 1.5 times that of the perovskite layer. The coefficient of thermal expansion of the insulating filling layer is less than or equal to that of the perovskite layer. The dimension of the protrusions in the width direction of the third scribed groove is 50 μm to 200 μm.

2. The perovskite cell assembly of claim 1, wherein, Meet one or more of the following: (1) The tilt angle of the protruding structure is 25°~45°; (2) The distance between two adjacent protrusions is 150μm~250μm.

3. The perovskite cell assembly of claim 1, wherein, The protrusion structure includes one or more of the following: arc-shaped protrusion, trapezoidal protrusion, and triangular protrusion.

4. The perovskite cell assembly of claim 1, wherein, The raised structure is provided along the entire length of the height direction of the third scribed groove.

5. The perovskite cell assembly of claim 1, wherein, The coefficient of thermal expansion of the insulating filling layer is 0.8 to 1 times that of the perovskite layer.

6. The perovskite cell assembly of claim 1, wherein, The insulating filler layer comprises graphene quantum dots and a polymer matrix; based on the total mass of the insulating filler layer, the mass fraction of the graphene quantum dots is 5% to 15%.

7. The perovskite cell assembly of claim 6, wherein, Based on the total mass of the insulating filler layer, the mass fraction of the graphene quantum dots is 5% to 10%.

8. The perovskite cell assembly of claim 6, wherein, The polymer matrix includes one or more of polymethyl methacrylate, epoxy resin, polyimide, polyvinylidene fluoride, silicone rubber, polycarbonate, and polystyrene; And / or, the average particle size of the graphene quantum dots is 10 nm to 100 nm.

9. The perovskite solar cell module according to any one of claims 1 to 8, characterized in that, The perovskite sub-cell includes a bottom electrode layer, a perovskite layer and a back electrode layer stacked sequentially. The bottom electrode layer has a first scribed groove, and the sidewall of the first scribed groove has a contour shape formed by a plurality of protrusions arranged along the length direction of the first scribed groove.

10. The perovskite cell assembly of claim 9, wherein, The perovskite layer has a second scribed groove, and the sidewall of the second scribed groove has a contour shape formed by a plurality of the protrusions arranged along the length direction of the second scribed groove.

11. A method of preparing a perovskite cell assembly, characterized by, Includes the following steps: A perovskite layer is prepared on the bottom electrode layer; A back electrode layer is prepared on the surface of the perovskite layer that is opposite to the bottom electrode layer; A third laser scribing is performed on the back electrode layer and the perovskite layer to form a third scribing groove; An insulating filling layer is formed within the third scribed groove; The sidewall of the third scribe groove has a contour shape formed by multiple protruding structures arranged along the length of the third scribe groove; the inclination angle of the protruding structure is 15°~45°, and the distance between two adjacent protruding structures is 100μm~300μm; the elastic modulus of the insulating filling layer is 1~1.5 times that of the perovskite layer; the coefficient of thermal expansion of the insulating filling layer is less than or equal to the coefficient of thermal expansion of the perovskite layer; the dimension of the protruding structure in the width direction of the third scribe groove is 50μm~200μm.

12. The method for preparing a perovskite solar cell module according to claim 11, characterized in that, Forming an insulating filling layer within the third scribed groove includes the following steps: An insulating filler is filled into the third groove, and after annealing, the insulating filler layer is formed in the third groove.

13. The method for preparing a perovskite solar cell module according to claim 12, characterized in that, The annealing temperature is 85℃~100℃; And / or, the annealing process takes 30 to 60 minutes; And / or, the annealing process is performed under a protective atmosphere.

14. The method for preparing a perovskite solar cell module according to claim 11, characterized in that, The laser used for the third laser marking is a femtosecond laser; the power density of the femtosecond laser is 1×10⁻⁶. 5 W / cm 2 ~1×10 10 W / cm 2 The pulse width is 5fs~500fs, the spot overlap rate is 5%~80%, and the scanning speed is 1000mm / s~8000mm / s.

15. The method for preparing a perovskite solar cell module according to any one of claims 11 to 14, characterized in that, Before preparing the perovskite layer on the bottom electrode layer, the preparation method further includes the following steps: The bottom electrode layer is laser-scribed to form a first groove; the sidewall of the first groove has a contour shape formed by a plurality of protrusions arranged along the length of the first groove.

16. The method for preparing a perovskite solar cell module according to claim 15, characterized in that, After the perovskite layer is prepared on the bottom electrode layer, and before the back electrode layer is prepared on the surface of the perovskite layer opposite to the bottom electrode layer, the preparation method further includes the following steps: The perovskite layer is laser-scribed to form a second groove; the sidewall of the second groove has a contour shape formed by a plurality of protrusions arranged along the length of the second groove.

17. A photovoltaic system characterized by, The perovskite solar cell module includes any one of claims 1 to 10, or a perovskite solar cell module prepared by the method of preparing the perovskite solar cell module according to any one of claims 11 to 16.

18. A power generation device characterized by comprising: The perovskite solar cell module includes any one of claims 1 to 10, or a perovskite solar cell module prepared by the method of preparing the perovskite solar cell module according to any one of claims 11 to 16.

19. An electrical device, comprising: The perovskite solar cell module includes any one of claims 1 to 10, or a perovskite solar cell module prepared by the method of preparing the perovskite solar cell module according to any one of claims 11 to 16.

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