Display device and head-mounted display equipment

Abstract

The invention relates to a display device and a head-mounted display device. The display device includes: an infrared light emitting diode in a first sub-pixel in which a second anode, an infrared emission layer, and a second cathode are stacked; an infrared photodiode in the second sub-pixel, wherein a second anode, an infrared receiving layer and a second cathode are stacked in the infrared photodiode; a dielectric layer on each of the infrared light emitting diode and the infrared photodiode; a light emitting diode in each of the first sub-pixel and the second sub-pixel, in which a first anode, a light emitting layer, and a first cathode are stacked on a dielectric layer, where each of the first anode and the second cathode is formed of a metal, and where the first anode and the second cathode are stacked on the dielectric layer. A structure configured with the second cathode, the dielectric layer, and the first anode reflects visible light and transmits infrared light.

Description

Technical Field

[0001] This disclosure relates to display devices and head-mounted display devices. Background Technology

[0002] Recently, virtual reality (VR), mixed reality (MR), extended reality (XR), and other technologies are being realized through head-mounted display (HMD) devices.

[0003] For example, head-mounted display devices that enhance user experience are additionally equipped with infrared emitting elements and infrared sensing elements to track the user's gaze.

[0004] The descriptions provided in the Background section should not be considered prior art simply because they are mentioned or associated with in the Background section. The Background section may contain information describing one or more aspects of the subject matter. Summary of the Invention

[0005] The inventors of this application have discovered that as infrared light-emitting elements and sensing elements are additionally equipped, the weight and size of head-mounted display devices increase, and the wearing comfort decreases.

[0006] The advantage of this disclosure is that it provides a display device and a head-mounted display device that can alleviate the problems caused by additionally installing infrared light-emitting elements and sensing elements, thereby achieving miniaturization and weight reduction of the head-mounted display device and improving user wearing comfort.

[0007] Additional features and advantages of this disclosure will be set forth in the following description, and in part will be apparent directly from the description, or may be learned by practice of the disclosure. These and other advantages of this disclosure will be realized and obtained by means of the structures particularly pointed out in the written description, the claims, and the drawings.

[0008] To achieve these and other advantages, and in accordance with the purposes of this disclosure, as embodied and broadly described herein, a display device includes: a substrate including a first sub-pixel and a second sub-pixel; an infrared light-emitting diode (LED) in the first sub-pixel on the substrate, wherein a second anode, an infrared emitting layer, and a second cathode are stacked in the LED; an infrared photodiode in the second sub-pixel on the substrate, wherein a second anode, an infrared receiving layer, and a second cathode are stacked in the infrared photodiode; a dielectric layer on each of the LED and the infrared photodiode; and a light-emitting diode in each of the first and second sub-pixels, wherein a first anode, an emitting layer, and a first cathode are stacked on the dielectric layer, wherein each of the first anode and the second cathode is formed of metal, and wherein the structure in which the second cathode, the dielectric layer, and the first anode are disposed reflects visible light and transmits infrared light.

[0009] In another exemplary aspect, a display device includes: a substrate comprising a plurality of sub-pixels; a light-emitting diode (LED) located in one of the sub-pixels and emitting visible light; an infrared LED or infrared photodiode positioned below the LED in one of the sub-pixels, the infrared LED emitting infrared light and the infrared photodiode receiving infrared light; and a dielectric layer interposed between a first anode of the LED and a second cathode of the infrared LED or infrared photodiode, wherein each of the first anode and the second cathode is formed of metal and has a thickness of [missing information]. to Within the range, and wherein the thickness of the dielectric layer is to Within the range.

[0010] In another exemplary aspect, a head-mounted display device includes: the aforementioned display device; and a device frame on which the display device is mounted in front of a user's eyes.

[0011] It should be understood that the foregoing general description and the following detailed description are exemplary and illustrative, and are intended to provide further explanation of the claimed disclosure. Attached Figure Description

[0012] The accompanying drawings, which are included to provide a further understanding of this disclosure and are incorporated in and constitute a part of this application, illustrate exemplary embodiments of the disclosure and, together with the description, serve to explain the various principles of the disclosure. In the drawings:

[0013] Figure 1This is a diagram schematically illustrating the structure of a head-mounted display device including a display panel according to an exemplary embodiment of the present disclosure;

[0014] Figure 2 This is a diagram schematically illustrating the configuration of a head-mounted display device according to an exemplary embodiment of the present disclosure;

[0015] Figure 3 This is a schematic diagram illustrating the circuit structure of a sub-pixel equipped with an infrared light-emitting diode and an infrared photodiode according to an exemplary embodiment of the present disclosure.

[0016] Figure 4 This is a schematic plan view of a display panel according to an exemplary embodiment of the present disclosure;

[0017] Figure 5 and Figure 6 They are respectively along Figure 4 A cross-sectional view taken from lines V-V' and VI-VI';

[0018] Figure 7A and Figure 7B This is a graph showing experimental results of the transmittance and reflectance relative to wavelength for a selective transmission structure with a metal layer / dielectric layer / metal layer configured according to an exemplary embodiment of the present disclosure; and

[0019] Figure 8A and Figure 8B This is a diagram illustrating user eye tracking via a display panel with a built-in user eye tracking module according to an exemplary embodiment of the present disclosure.

[0020] In all accompanying drawings and detailed descriptions, unless otherwise stated, the same reference numerals should be understood to refer to the same elements, features, and structures. For clarity, illustrative purposes, the relative dimensions and descriptions of these elements may be exaggerated. Detailed Implementation

[0021] Descriptions of embodiments of this disclosure will now be given in detail, examples of which are illustrated in the accompanying drawings. In the following description, detailed descriptions of well-known functions or configurations associated with this document will be omitted where such descriptions are deemed unnecessary to obscure the essential points of the inventive concept. The described process steps and / or operations are merely examples; however, the sequence of steps and / or operations is not limited to those set forth herein and may be modified in accordance with manners known in the art, except for steps and / or operations that must be performed in a specific order. The names of corresponding elements used in the following description may have been chosen solely for convenience in writing the specification and may therefore differ from the names used in actual products.

[0022] The advantages and features of this disclosure and its implementation methods will become apparent from the following detailed description of the embodiments, taken in conjunction with the accompanying drawings. However, this disclosure is not limited to the embodiments described below, but can be implemented in various different forms, and only these embodiments make this disclosure complete. This disclosure is provided to fully inform those skilled in the art of this disclosure of its scope, and this disclosure may be defined by the scope of the claims.

[0023] The shapes (e.g., dimensions, lengths, widths, heights, thicknesses, positions, radii, diameters, and areas), proportions, angles, quantities, etc., disclosed in the accompanying drawings for illustrating embodiments of this disclosure are illustrative, and this disclosure is not limited to the contents shown. Throughout this specification, the same reference numerals denote the same parts. Any implementation described herein as an "example" is not necessarily to be construed as superior to or better than other implementations.

[0024] Furthermore, in describing this disclosure, detailed descriptions of relevant known technologies may be omitted if it is determined that such detailed descriptions unnecessarily obscure the subject matter of this disclosure. When terms such as "comprising," "including," "having," or "constituting" are used in this disclosure, additional parts may be added unless the word "only" is used. When components are expressed in a singular form, this also includes cases where plural forms are included, unless otherwise expressly stated.

[0025] When interpreting a component, it is interpreted as including a margin range, even if there is no separate explicit description.

[0026] When describing positional relationships, for example, when the positional relationship between two parts is described as "above", "over", "above", "below", "side", "below", etc., one or more other parts may be located between the two parts unless "exactly" or "directly" is used.

[0027] When describing temporal relationships, such as when describing time priority as "after", "following", "before", etc., discontinuous cases may be included unless "directly" or "immediately after" is used.

[0028] This article may use terms such as “below,” “lower,” “above,” and “higher” to describe the relationships between the objects shown in the figure. It should be understood that these terms are spatially relative and based on the orientation depicted in the figure.

[0029] In describing the components of this disclosure, terms such as “first,” “second,” “A,” “B,” “(a),” and “(b)” may be used. These terms are used only to distinguish a component from other components, and the nature, order, sequence, or number of components is not limited by these terms. The term “at least one” should be understood to include any and all combinations of one or more of the associated listed items. For example, “at least one of the first element, the second element, and the third element” means all combinations of the three listed elements, combinations of any two of the three elements, and each individual element, the first element, the second element, or the third element.

[0030] The corresponding features of the various embodiments of this disclosure may be partially or wholly connected or combined with each other, and may be technically interlocked and driven in various ways. The corresponding embodiments may be implemented independently of each other or may be implemented together in an associated relationship.

[0031] Unless otherwise defined, all terms used herein (including technical and scientific terms) shall have the same meaning as commonly understood by one of ordinary skill in the art to which the exemplary embodiments pertain. It should also be understood that terms as defined in common dictionaries shall be interpreted as having a meaning consistent with, for example, their meaning in the context of the relevant field, and shall not be interpreted in an idealized or overly formal sense unless explicitly defined herein. For example, the terms “component” or “unit” may be applied to, for example, a single circuit or structure, an integrated circuit, a computational block of a circuit arrangement, or any structure configured to perform the functions described herein as would be understood by one of skill in the art.

[0032] Hereinafter, embodiments of the present disclosure will be described in detail with reference to the accompanying drawings. Furthermore, in the following exemplary embodiments, the same and similar reference numerals are assigned to the same and similar components, and detailed descriptions thereof may be omitted.

[0033] Figure 1 This is a diagram schematically illustrating the structure of a head-mounted display device including a display panel according to an exemplary embodiment of the present disclosure. Figure 2 This is a diagram schematically illustrating the configuration of a head-mounted display device according to an exemplary embodiment of the present disclosure.

[0034] Reference Figure 1 and Figure 2 The head-mounted display device 10 in this embodiment may be an electronic device worn on the user's head and providing the user with various experiences such as VR, MR, and XR, but is not limited to this.

[0035] The head-mounted display device 10 may include, for example, a device frame (or housing) 50, a display panel (or display device) 100 mounted (or installed) on the device frame 50 and displaying images, and, for example, a drive circuit portion mounted on the device frame 50 and driving the display panel 100.

[0036] Here, the driving circuit section may include, for example, a processor 400 and a panel driving circuit 410, but is not limited thereto.

[0037] In the head-mounted display device 10 of this exemplary embodiment, infrared elements, such as infrared emitting elements and infrared sensing elements (or infrared light receiving elements), may be configured to be built into the display panel 100. As an example, such infrared elements are used to track the user's gaze using infrared light, but are not limited thereto.

[0038] Thus, since the infrared light-emitting element and infrared sensing element used to track the user's gaze are formed within the display panel 100, the infrared light-emitting element and infrared sensing element do not need to be separately and additionally mounted on the device frame 50 of the head-mounted display device 10.

[0039] Therefore, it can alleviate the problems caused by additionally installing infrared light-emitting elements and sensing elements, achieve miniaturization and weight reduction of head-mounted display device 10, and improve user wearing comfort.

[0040] The structure of the infrared light-emitting element and the infrared sensing element built into the display panel 100 is described in more detail below.

[0041] The device frame 50 is the main body of the device that defines the shape of the head-mounted display device 10, and may include a first frame 51 and a second frame 55.

[0042] The first frame 51 may be, for example, a portion that directly contacts the user's head to allow the head-mounted display device 10 to be worn by the user. The driving circuitry may, for example, be built into the first frame 51. As another example, the driving circuitry may be built into the second frame 55, or may be built into both the first frame 51 and the second frame 55.

[0043] The second frame 55 may be a portion connected to the front end of the first frame 51, and a display panel 100 positioned in front of the user's eyes (e.g., each eye) is mounted in the second frame 55. The second frame 55 may be integrally formed with the first frame 51, or it may be formed separately from the first frame 51 and combined with the first frame 51.

[0044] The display panel 100 can generate and output images for use by a user. The display panel 100 can be configured as a light-emitting display panel (e.g., an organic light-emitting display panel, but not limited thereto), which displays images using light-emitting diodes as light-emitting elements that emit light (e.g., visible light).

[0045] In the display panel 100, as an example, multiple sub-pixels SP can be arranged in a matrix along the row direction (or a first direction) and the column direction (or a second direction), or along the direction between the row and column directions. The multiple sub-pixels SP can include, for example, red (R), green (G), and blue (B) sub-pixels SP, which display different primary colors, namely red (R), green (G), and blue (B), respectively. Adjacent red, green, and blue sub-pixels SP can form a pixel, which is the unit representing full color. The implementation is not limited to this. As an example, sub-pixels of other colors, such as white, cyan, magenta, or yellow, may be optionally or additionally included.

[0046] The display panel 100 may, for example, receive image data (or image data voltage) IDi provided from the panel driving circuit 410, and in response thereto drive the light-emitting diodes of each sub-pixel SP to generate and output an image.

[0047] The image generated and output from the display panel 100 can be provided to the user's eyes, enabling the user to recognize the image.

[0048] Furthermore, as described above, the display panel 100 can generate and output infrared light for tracking the user's gaze (i.e., the user's eye position). This infrared light can be incident on the user's eyes, then reflected, and then incident on the display panel 100. Additionally, the display panel 100 can detect the infrared light incident on it and can generate and output corresponding sensing data RDir.

[0049] When implementing infrared light emission and sensing in the display panel 100, for example, infrared light-emitting diodes (LEDs) can be provided as infrared light-emitting elements in at least some of the plurality of sub-pixels SP. Alternatively, infrared photodiodes can be provided as infrared sensing elements in at least some of the plurality of sub-pixels SP.

[0050] Regarding uniform infrared light emission, as an example, infrared light-emitting diodes can be uniformly arranged in the display panel 100, but are not limited thereto. Regarding uniform infrared sensing, as an example, infrared photodiodes can be uniformly arranged in the display panel 100, but are not limited thereto.

[0051] Furthermore, as an example, sub-pixels SP with infrared LEDs and sub-pixels SP with infrared photodiodes can be different from each other, but are not limited to this. As an example, sub-pixels SP with infrared LEDs may not have infrared photodiodes, and sub-pixels SP with infrared photodiodes may not have infrared LEDs, but are not limited to this. Thus, the areas with infrared LEDs and the areas with infrared photodiodes can be different from each other. The implementation is not limited to this. As an example, sub-pixels SP with infrared LEDs and sub-pixels SP with infrared photodiodes can be the same as each other. As an example, the areas with infrared LEDs and the areas with infrared photodiodes can partially or completely overlap each other.

[0052] As an example, some sub-pixels SP within the display panel 100 may not have infrared light-emitting diodes (LEDs) and infrared photodiodes arranged therein, but this is not a limitation. As an example, some sub-pixels SP may have LEDs for displaying images formed, or neither infrared LEDs nor infrared photodiodes may be formed. The implementation is not limited to this. As an example, each sub-pixel SP within the display panel 100 may include at least one or both of infrared LEDs and infrared photodiodes, but this is not a limitation.

[0053] As described above, infrared light-emitting diodes and infrared photodiodes can be arranged in various forms in the display panel 100.

[0054] In this exemplary embodiment, for ease of explanation, an example is given where infrared LEDs and infrared photodiodes are arranged in different sub-pixels SP and where they are alternately arranged along each column line in the sub-pixel SP; however, the embodiment is not limited to this. As an example, an example is given where sub-pixels SP containing infrared LEDs are arranged along row lines and sub-pixels SP containing infrared photodiodes are arranged along adjacent row lines; however, the embodiment is not limited to this.

[0055] Alternatively, infrared light-emitting diodes and infrared photodiodes can be arranged adjacent to each other along column lines and row lines, or they can be arranged alternately with at least one sub-pixel SP interspersed therebetween, but the implementation is not limited thereto.

[0056] For ease of explanation, the sub-pixel SP containing the infrared LED can be referred to as the first sub-pixel SP1, and the sub-pixel SP containing the infrared photodiode can be referred to as the second sub-pixel SP2. As an example, the sub-pixel SP in which the infrared LED is arranged together with the LED displaying the image can be referred to as the first sub-pixel SP1, and the sub-pixel SP in which the infrared photodiode is arranged together with the LED displaying the image can be referred to as the second sub-pixel SP2.

[0057] In this case, the display panel 100 can receive, for example, infrared emission data IDir provided from the panel driving circuit 410, and in response, drive the infrared light-emitting diode in the corresponding first sub-pixel SP1 to generate infrared light and output the infrared light to the user's eyes.

[0058] In this way, the infrared light generated and output from the infrared light-emitting diode of the first sub-pixel SP1 of the display panel 100 can be reflected from the user's eyes and input back to the display panel 100.

[0059] Infrared light input to the display panel 100 can be sensed by the infrared photodiode of, for example, the second sub-pixel SP2 through the photoelectric effect, and can generate and output sensing data (or infrared sensing data) RDir.

[0060] In this way, the sensing data RDir output from the second sub-pixel SP2 of the display panel 100 can be provided to the panel driving circuit 410.

[0061] The panel driving circuit 410 can process the sensing data RDir and provide it to the processor 400.

[0062] As described above, the processor 400 can output image data IDi for image display and infrared emission data IDi for infrared emission to the panel driving circuit 410.

[0063] Additionally, the processor 400 can receive sensing data RDir from the panel driving circuit 410, which is infrared sensing information. The processor 400 can analyze the sensing data RDir to obtain gaze information, including the user's eye position and blinking. The gaze information can be used as user input information, and based on this input information, corresponding image data IDi can be provided to the panel driving circuit 410.

[0064] The configuration of the sub-pixel SP equipped with an infrared light-emitting diode and an infrared photodiode in this exemplary embodiment will be explained in more detail below.

[0065] Figure 3 This is a schematic diagram illustrating the circuit structure of a sub-pixel equipped with an infrared light-emitting diode and an infrared photodiode according to an exemplary embodiment of the present disclosure.

[0066] exist Figure 3 In the example described above, the first sub-pixel SP1 and the second sub-pixel SP2 are arranged alternately along the column line.

[0067] Reference Figure 3 as well as Figure 1 and Figure 2The first sub-pixel SP1 may include a light-emitting diode (or a first light-emitting diode) OD for displaying an image and an infrared light-emitting diode (or a second light-emitting diode) IRLD for emitting infrared light IR.

[0068] Additionally, the second sub-pixel SP2 may include a light-emitting diode (or a first light-emitting diode) OD for displaying an image and an infrared photodiode IRPD for sensing infrared light IR.

[0069] The first sub-pixel SP1 may include a pixel driving circuit (or a first pixel driving circuit) that drives a light-emitting diode OD and an infrared light-emitting diode IRLD.

[0070] For example, the first sub-pixel SP1 may include a switching transistor Ts1, a driving transistor Td1, and a storage capacitor Cst1 for driving the light-emitting diode OD. Alternatively, the first sub-pixel SP1 may include a switching transistor Ts2, a driving transistor Td2, and a storage capacitor Cst2 for driving the infrared light-emitting diode IRLD. The implementation is not limited to this. As an example, one or more of the above components may be omitted depending on the design, or the first sub-pixel SP1 may also include one or more transistors or one or more capacitors. As an example, the pixel driving circuit of the first sub-pixel SP1 can be varied in various ways, and is not limited to this. Figure 3 The circuit shown.

[0071] For ease of explanation, the switching transistor Ts1, driving transistor Td1, and storage capacitor Cst1 driving the light-emitting diode OD can be referred to as the first switching transistor Ts1, the first driving transistor Td1, and the first storage capacitor Cst1, respectively. Similarly, the switching transistor Ts2, driving transistor Td2, and storage capacitor Cst2 driving the infrared light-emitting diode IRLD can be referred to as the second switching transistor Ts2, the second driving transistor Td2, and the second storage capacitor Cst2, respectively.

[0072] Furthermore, the structure of the pixel driving circuit for the first sub-pixel SP1 described above is only an example, and other circuit structures may be used.

[0073] The first switching transistor Ts1 can be connected to the corresponding first gate line GL1 and first data line DL1. Here, the corresponding image data IDi can be transmitted through the first data line DL1. For example, the gate electrode of the first driving transistor Td1 can be connected to the drain electrode of the first switching transistor Ts1, the source electrode of the first driving transistor Td1 is applied with a first high potential voltage VDD1, and the drain electrode of the first driving transistor Td1 is connected to the anode (or first anode) of the light-emitting diode OD. In addition, the cathode (or first cathode) of the light-emitting diode OD can be applied with a first low potential voltage VSS1. Furthermore, the first storage capacitor Cst1 can be connected between the gate electrode and the drain electrode of the first driving transistor Td1.

[0074] In this case, when the first switching transistor Ts1 is turned on and the image data IDi is input to the first sub-pixel SP1, the first driving transistor Td1 can be turned on, and the driving current can flow to the light-emitting diode OD, so that the corresponding visible light can be generated and output from the light-emitting diode OD.

[0075] Additionally, the second switching transistor Ts2 can be connected to the corresponding second gate line GL2 and second data line DL2. Here, the corresponding infrared emission data IDir can be transmitted through the second data line DL2. For example, the gate electrode of the second driving transistor Td2 can be connected to the drain electrode of the second switching transistor Ts2, a second high potential voltage VDD2 is applied to the source electrode of the second driving transistor Td2, and the drain electrode of the second driving transistor Td2 is connected to the anode (or second anode) of the infrared light-emitting diode IRLD. Furthermore, a second low potential voltage VSS2 can be applied to the cathode (or second cathode) of the infrared light-emitting diode IRLD. Additionally, the second storage capacitor Cst2 can be connected between the gate electrode and the drain electrode of the second driving transistor Td2.

[0076] In this case, when the second switching transistor Ts2 is turned on and the infrared emission data IDir is input to the first sub-pixel SP1, the second driving transistor Td2 can be turned on, and the driving current can flow to the infrared light-emitting diode IRLD, so that the corresponding infrared IR can be generated and output from the infrared light-emitting diode IRLD.

[0077] Furthermore, the first high potential voltage VDD1 and the second high potential voltage VDD2 may be the same as or different from each other, and the first low potential voltage VSS1 and the second low potential voltage VSS2 may be the same as or different from each other.

[0078] In addition, in the first sub-pixel SP1, the emission timing of the light-emitting diode OD can be basically the same as or different from that of the infrared light-emitting diode IRLD.

[0079] In addition, the second sub-pixel SP2 may include a pixel driving circuit (or a second pixel driving circuit) that drives the light-emitting diode OD and the infrared photodiode IRPD.

[0080] For example, similar to the first sub-pixel SP1, the second sub-pixel SP2 may include a first switching transistor Ts1, a first driving transistor Td1, and a first storage capacitor Cst1 for driving the light-emitting diode OD. Additionally, as an example, the second sub-pixel SP2 may include a third switching transistor Ts3, which is a switching transistor Ts3 for driving the infrared photodiode IRPD.

[0081] Furthermore, the structure of the pixel driving circuit for the second sub-pixel SP2 described above is only an example, and other circuit structures can be used.

[0082] The first switching transistor Ts1 can be connected to the corresponding first gate line GL1 and first data line DL1. Here, the corresponding image data IDi can be transmitted through the first data line DL1. For example, the gate electrode of the first driving transistor Td1 can be connected to the drain electrode of the first switching transistor Ts1, the source electrode of the first driving transistor Td1 is applied with a first high potential voltage VDD1, and the drain electrode of the first driving transistor Td1 is connected to the anode (or first anode) of the light-emitting diode OD. In addition, the cathode (or first cathode) of the light-emitting diode OD can be applied with a first low potential voltage VSS1. Furthermore, the first storage capacitor Cst1 can be connected between the gate electrode and the drain electrode of the first driving transistor Td1.

[0083] In this case, similar to the first sub-pixel SP1, when the first switching transistor Ts1 is turned on and the image data IDi is input to the second sub-pixel SP2, the first driving transistor Td1 can be turned on, and the driving current can flow to the light-emitting diode OD, so that the corresponding visible light can be generated and output from the light-emitting diode OD.

[0084] Additionally, as an example, the third switching transistor Ts3 can be connected to the corresponding third gate line GL3 and readout line (or readout data line) RL. Furthermore, the infrared photodiode IRPD can have an anode (or second anode) connected to the drain electrode of the third switching transistor Ts3, and a cathode (or second cathode) to which a bias voltage VB is applied.

[0085] In this configuration, infrared light IR emitted from the infrared light-emitting diode IRLD of the first sub-pixel SP1 and reflected from the user's eye can be incident on the infrared photodiode IRPD of the second sub-pixel SP2. Sensing data RDir, an electrical signal corresponding to the infrared light incident on the second sub-pixel SP2, can be generated through the photoelectric effect of the IRPD. When the third switching transistor Ts3 is turned on, the sensing data RDir can be transmitted through the readout line RL.

[0086] Furthermore, the emission timing of infrared light-emitting diodes (IRLDs) and the sensing timing of infrared photodiodes (IRPDs) can be essentially the same or different.

[0087] Furthermore, regarding the arrangement of the first data line DL1, the second data line DL2, and the readout line RL, for example, in the display panel 100, the first data line DL1, the second data line DL2, and the readout line RL can be formed to extend along the column direction. In this case, the first data line DL1 can be connected to each sub-pixel SP of the corresponding column line, the second data line DL2 can be connected to the first sub-pixel SP1 of the corresponding column line, and the readout line RL can be connected to the second sub-pixel SP2 of the corresponding column line.

[0088] Regarding the arrangement of the first gate line GL1 to the third gate line GL3, for example, in the display panel 100, the first gate line GL1 to the third gate line GL3 may be formed to extend along the row direction. In this exemplary embodiment, for ease of explanation, an example is given with the first gate line GL1 to the third gate line GL3 arranged in each row line. As an example, the first gate line GL1 to the third gate line GL3 may be arranged between the first sub-pixel SP1 and the second sub-pixel SP2, but is not limited thereto.

[0089] In this case, the first gate line GL1 can be connected to each sub-pixel SP of the corresponding row line, the second gate line GL2 can be connected to the first sub-pixel SP1 of the corresponding row line, and the third gate line GL3 can be connected to the second sub-pixel SP2 of the corresponding row line.

[0090] As described above, in this exemplary embodiment, the infrared light-emitting diode (IRLD) can be located in the first sub-pixel SP1, and the infrared photodiode (IRPD) can be located in the second sub-pixel SP2.

[0091] Infrared light-emitting diodes (IRLDs) and infrared photodiodes (IRPDs) can each be configured to be formed below light-emitting diodes (ODs) in their sub-pixels (SPs), as will be described in more detail below.

[0092] Figure 4 This is a schematic plan view of a display panel according to an exemplary embodiment of the present disclosure. Figure 5 and Figure 6 They are respectively along Figure 4 The cross-sectional views taken by lines V-V' and VI-VI' schematically show the cross-sectional structure of the first and second sub-pixels.

[0093] exist Figures 4 to 6 For ease of explanation, consider the case where each of the first sub-pixel SP1 and the second sub-pixel SP2 is arranged in each row line. For example, the first sub-pixel SP1 is arranged in an odd (or even) row line, and the second sub-pixel SP2 is arranged in an even (or odd) row line.

[0094] Reference Figures 4 to 6 as well as Figures 1 to 3 In the exemplary embodiment, infrared light-emitting diodes (IRLD) and light-emitting diodes (OD) stacked sequentially in the upward direction can be formed in the first sub-pixel SP1, and infrared photodiodes (IRPD) and light-emitting diodes (OD) stacked sequentially in the upward direction can be formed in the second sub-pixel SP2.

[0095] As an example, each of the first sub-pixel SP1 and the second sub-pixel SP2 may include a light-emitting diode (OLED) OD positioned at the top, which emits visible light of a corresponding color (e.g., red, green, or blue); in the first sub-pixel SP1, an infrared light-emitting diode (IRLD) emitting infrared light (IR) may be positioned below the OLED OD; in the second sub-pixel SP2, an infrared photodiode (IRPD) sensing infrared light (IR) may be positioned below the OLED OD. As an example, the infrared light-emitting diode (IRLD) emitting infrared light (IR) may be positioned to partially or completely overlap with the OLED OD in the first sub-pixel SP1, or it may be positioned horizontally separated from the OLED OD in the first sub-pixel SP1; the infrared photodiode (IRPD) sensing infrared light (IR) may be positioned to partially or completely overlap with the OLED OD in the second sub-pixel SP2, or it may be positioned horizontally separated from the OLED OD in the second sub-pixel SP2. The implementation is not limited to this. As an example, an infrared light-emitting diode (IRLD) can be positioned above or on substantially the same layer as the light-emitting diode (OD) in the first sub-pixel SP1; or, an infrared photodiode (IRPD) for sensing infrared radiation (IR) can be positioned above or on substantially the same layer as the light-emitting diode (OD) in the second sub-pixel SP2.

[0096] Furthermore, as described above, among the sub-pixels SP of the display panel 100, unlike the first sub-pixel SP1 and the second sub-pixel SP2, there may be sub-pixels SP that do not have infrared light-emitting diodes (IRLD) and infrared photodiodes (IRPD). In this case, the light-emitting diodes (OD) of these sub-pixels SP can be formed to contact the upper surface of the planarization layer 145 beneath them. In this exemplary embodiment, the substrate 101 of the display panel 100 may be, for example, a silicon wafer, or a glass substrate or plastic substrate with insulating properties, but is not limited thereto. In this exemplary embodiment, for ease of explanation, the case where the substrate 101 is formed of a silicon wafer is used as an example.

[0097] When the substrate 101 is formed from a silicon wafer, a semiconductor layer 105 can be formed in the substrate 101, which forms each transistor (or thin-film transistor) T in each sub-pixel SP.

[0098] For example, the semiconductor layer 105 of each of the first switching transistor Ts1, the first driving transistor Td1, the second switching transistor Ts2, and the second driving transistor Td2 of the first sub-pixel SP1 can be formed in the substrate 101. Additionally, the semiconductor layer 105 of each of the first switching transistor Ts1, the first driving transistor Td1, and the third switching transistor Ts3 of the second sub-pixel SP2 can be formed in the substrate 101. The implementation is not limited to this. As an example, at least one of the semiconductor layers 105 of the first switching transistor Ts1, the first driving transistor Td1, the second switching transistor Ts2, and the second driving transistor Td2 of the first sub-pixel SP1, and the semiconductor layers 105 of the first switching transistor Ts1, the first driving transistor Td1, and the third switching transistor Ts3 of the second sub-pixel SP2 can be formed on a layer other than the substrate 101 (e.g., above the substrate 101), but is not limited to this.

[0099] In addition, Figure 5 and Figure 6 For ease of explanation, the first driving transistor Td1, the second driving transistor Td2, and the third switching transistor Ts3 are shown in the diagram.

[0100] The semiconductor layer 105 may include a channel region in the middle and source and drain regions on both sides of the channel region. The semiconductor layer 105 may be formed of polysilicon, but is not limited thereto.

[0101] As another example, when the substrate 101 is formed of a glass substrate or a plastic substrate, a semiconductor layer 105 may be formed on the substrate 101. In this case, the semiconductor layer 105 may be formed of polycrystalline silicon, amorphous silicon, compound semiconductor, organic semiconductor or oxide semiconductor, but is not limited thereto.

[0102] A gate insulating layer 110 may be formed on a substrate 101 having a semiconductor layer 105. The gate insulating layer 110 may be formed, for example, from an inorganic insulating material such as silicon dioxide (SiO2) or silicon nitride (SiNx), but is not limited thereto.

[0103] The gate electrode 115 forming each transistor T can be formed on the gate insulating layer 110.

[0104] An interlayer insulating layer 120 may be formed on the gate electrode 115. The interlayer insulating layer 120 may be formed, for example, from an inorganic insulating material such as silicon dioxide (SiO2) or silicon nitride (SiNx), but is not limited thereto.

[0105] A first contact hole CH1 and a second contact hole CH2 can be formed in the interlayer insulating layer 120 and the gate insulating layer 110 to expose the source region and drain region of the semiconductor layer 105 of each transistor T, respectively.

[0106] On the interlayer insulating layer 120, a source electrode 121 and a drain electrode 123 can be formed, which form each transistor T. Here, the source electrode 121 can contact the source region of the semiconductor layer 105 through a corresponding first contact hole CH1, and the drain electrode 123 can contact the drain region of the semiconductor layer 105 through a corresponding second contact hole CH2.

[0107] A first passivation layer 130 may be formed on the source electrode 121 and the drain electrode 123. The first passivation layer 130 may be formed, for example, from an inorganic insulating material such as silicon dioxide (SiO2) or silicon nitride (SiNx) or an organic insulating material such as photosensitive acrylic resin or benzocyclobutene, but is not limited thereto. Furthermore, the first passivation layer 130 may be formed from at least one insulating layer. For example, a third contact hole CH3 exposing the drain electrode 123 of the first driving transistor Td1 may be formed in the first passivation layer 130.

[0108] As an example, a connection electrode 135 may be formed on the first passivation layer 130. The connection electrode 135 may be connected to the drain electrode 123 of the first driving transistor Td1 through the third contact hole CH3. The implementation is not limited to this. As an example, the connection electrode 135 may be omitted depending on the design.

[0109] A second passivation layer 140 may be formed on the connecting electrode 135. The second passivation layer 140 may be formed, for example, from an inorganic insulating material such as silicon dioxide (SiO2) or silicon nitride (SiNx) or an organic insulating material such as photosensitive acrylic resin or benzocyclobutene, but is not limited thereto. In addition, the second passivation layer 140 may be formed from at least one insulating layer.

[0110] For example, a fourth contact hole CH4 can be formed in the first passivation layer 130 and the second passivation layer 140 to expose each of the drain electrode 123 of the second driving transistor Td2 and the drain electrode 123 of the third switching transistor Ts3.

[0111] As an example, a reflective electrode RE can be formed on the second passivation layer 140, but is not limited thereto. The reflective electrode RE can be connected to one of the drain electrodes 123 of the second driving transistor Td2 and the third switching transistor Ts3 through the fourth contact hole CH4. More specifically, in the first sub-pixel SP1, the reflective electrode RE can be connected to the drain electrode 123 of the second driving transistor Td2 through the fourth contact hole CH4; and in the second sub-pixel SP2, the reflective electrode RE can be connected to the drain electrode 123 of the third switching transistor Ts3 through the fourth contact hole CH4. As an example, the reflective electrode RE can be omitted depending on the design.

[0112] The reflective electrode RE can be arranged to face each of the infrared light-emitting diode IRLD and the infrared photodiode IRPD located thereon.

[0113] The reflective electrode RE can reflect infrared light IR to improve infrared emission efficiency and infrared reception efficiency (or infrared sensing efficiency).

[0114] In this regard, in the first sub-pixel SP1, the infrared IR generated from the infrared light-emitting diode IRLD, which propagates downwards, can be reflected by the reflective electrode RE and propagated upwards towards the user, thereby improving the infrared emission efficiency of the first sub-pixel SP1. Furthermore, in the second sub-pixel SP2, the infrared IR incident upon it, which passes through the infrared photodiode IRPD and propagates downwards, can be reflected by the reflective electrode RE and incident on the infrared photodiode IRPD, thereby improving the infrared reception efficiency of the second sub-pixel SP2.

[0115] A planarization layer 145 can be formed on the reflective electrode RE. The planarization layer 145 can be formed, for example, from an inorganic insulating material such as silicon dioxide (SiO2) or silicon nitride (SiNx) or an organic insulating material such as photosensitive acrylic resin or benzocyclobutene, but is not limited thereto. In addition, the planarization layer 145 can be formed from at least one insulating layer.

[0116] For example, a fifth contact hole CH5 exposing the reflective electrode RE can be formed on the planarization layer 145.

[0117] An infrared light-emitting diode (IRLD) can be formed in the first sub-pixel SP1 on the planarization layer 145, and an infrared photodiode (IRPD) can be formed in the second sub-pixel SP2.

[0118] In this regard, for example, a second anode AE2 can be formed on the planarization layer 145 in each of the first sub-pixel SP1 and the second sub-pixel SP2. Here, the second anode AE2 can be formed of a conductive material (e.g., TiN) having transmission properties (or infrared transmission properties), but is not limited thereto. When the second anode AE2 is formed of TiN, its thickness can be, for example, approximately... to To achieve transmission characteristics (or infrared transmission characteristics).

[0119] As an example, the second anode AE2 can be connected to the reflective electrode RE through the fifth contact hole CH5. Therefore, in the first sub-pixel SP1, the second anode AE2 can be electrically connected to the drain electrode 123 of the second driving transistor Td2 through the reflective electrode RE. In the second sub-pixel SP2, the second anode AE2 can be electrically connected to the drain electrode 123 of the third switching transistor Ts3 through the reflective electrode RE. The implementation is not limited to this. As an example, the reflective electrode RE can be floating or connected to another electrode without being connected to the second anode AE2. As an example, the second anode AE2 can be connected to the drain electrode 123 of the second driving transistor Td2 without the reflective electrode RE, and in the second sub-pixel SP2, the second anode AE2 can be connected to the drain electrode 123 of the third switching transistor Ts3 without the reflective electrode RE.

[0120] Additionally, in the first sub-pixel SP1, an infrared emitting layer REL that emits infrared light IR can be formed on the second anode AE2. Furthermore, in the second sub-pixel SP2, an infrared receiving layer RPL can be formed on the second anode AE2; this infrared receiving layer is a photoelectric layer that receives and senses infrared light IR.

[0121] Here, the infrared emitting layer (REL) can be formed, for example, using organic and / or inorganic materials. The infrared receiving layer (RPL) can also be formed, for example, using organic and / or inorganic materials.

[0122] A second cathode CE2 can be formed on each of the infrared emitting layer REL of the first sub-pixel SP1 and the infrared receiving layer RPL of the second sub-pixel SP2.

[0123] Here, as an example, the second cathode CE2 can be formed in an extended form, such as in the form of row line units or column line units, but is not limited thereto. In this exemplary embodiment, for ease of explanation, it is used as follows... Figure 4The second cathode CE2 shown is formed extending along each row line as an example. In this case, the second cathode CE2 can be connected to voltage pads at, for example, its ends (e.g., both ends or one end) to receive the corresponding second low potential voltage VSS2 or bias voltage VB. In this regard, the second cathode CE2 located in the row line where the first sub-pixel SP1 is arranged can receive the second low potential voltage VSS2 through the corresponding voltage pad, and the second cathode CE2 located in the row line where the second sub-pixel SP2 is arranged can receive the bias voltage VB through the corresponding voltage pad. The implementation is not limited to this. As an example, the second cathode CE2 can be formed for each sub-pixel, or it can be formed for all sub-pixels together, but is not limited to this.

[0124] As described above, an infrared light-emitting diode (IRLD) configured with a second anode AE2, an infrared emitting layer REL, and a second cathode CE2 can be formed in the first sub-pixel SP1, and an infrared photodiode (IRPD) configured with a second anode AE2, an infrared receiving layer RPL, and a second cathode CE2 can be formed in the second sub-pixel SP2.

[0125] A dielectric layer DEL can be formed on each of the first sub-pixel SP1 and the second sub-pixel SP2. The implementation is not limited to this. As an example, the dielectric layer DEL can be formed together for all or some of the sub-pixels, but is not limited to this.

[0126] On the dielectric layer DEL, a light-emitting diode OD emitting a visible light of a certain color can be formed in each of the first sub-pixel SP1 and the second sub-pixel SP2.

[0127] For example, a first anode AE1 can be formed on the dielectric layer DEL in each of the first sub-pixel SP1 and the second sub-pixel SP2.

[0128] Additionally, a light-emitting layer (or visible light emitting layer) EL emitting visible light of a certain color can be formed on the first anode AE1 of each of the first sub-pixel SP1 and the second sub-pixel SP2. As another example, the light-emitting layer EL of the sub-pixel SP can be configured as a white light emitting layer emitting white light. In this case, a color filter expressing the corresponding color can be provided on the light-emitting diode OD, and / or the light-emitting diode OD can be configured to have a microcavity structure to emit the corresponding color.

[0129] Here, the light-emitting layer EL can be formed, for example, from organic and / or inorganic materials. In this exemplary embodiment, for ease of illustration, an example of the light-emitting layer EL being formed from an organic material is considered. A first cathode CE1 can be formed on the light-emitting layer EL of each sub-pixel SP. The first cathode CE1 can be formed, for example, from a transparent conductive material such as ITO or IZO, but is not limited thereto.

[0130] Here, the first cathode CE1 may have, for example, an integrally formed shape to substantially correspond to the entire display area of ​​the display panel 100 (or to all sub-pixels SP), such as Figure 4 As shown. In this case, for example, the first cathode CE1 can be connected to a voltage pad, which, for example, has a first low potential voltage VSS1 input at its edge, and the first cathode CE1 can receive the first low potential voltage VSS1.

[0131] As described above, a light-emitting diode OD configured with a first anode AE1, a light-emitting layer EL, and a first cathode CE1 can be formed in each sub-pixel SP.

[0132] Furthermore, a dam 150 can be formed along the boundary of each sub-pixel SP, and an opening OP can be formed inside the dam 150. The opening OP of the dam 150 can define the light-emitting area (or visible light emitting area) of the sub-pixel SP. Furthermore, the opening OP of the first sub-pixel SP1 can define the light-emitting area and the infrared emitting area, and the opening OP of the second sub-pixel SP2 can define the light-emitting area and the infrared receiving area. The implementation is not limited to this. As an example, the light-emitting area and the infrared emitting area can be formed separately and can be defined by different openings of the dam 150; or, the light-emitting area and the infrared receiving area can be formed separately and can be defined by different openings of the dam 150, but are not limited thereto.

[0133] In this regard, the light-emitting diode OD and the infrared light-emitting diode IRLD can be configured in the opening OP of the first sub-pixel SP1, and the light-emitting diode OD and the infrared photodiode IRPD can be configured in the opening OP of the second sub-pixel SP2.

[0134] As an example, the dike 150 may include, for instance, a first dike layer 151 located at the bottom and a second dike layer 152 stacked on the first dike layer 151, or may include a single layer or three or more layers, but is not limited thereto.

[0135] In this case, as an example, the edge of the first anode AE1 may extend above the upper surface of the first dam 151, and the edge of the first anode AE1 may be covered by the second dam 152, but is not limited thereto.

[0136] Additionally, a sixth contact hole CH6 exposing the connection electrode 135 can be formed in the first dam layer 151, the planarization layer 145, and the second passivation layer 140.

[0137] The first anode AE1 can be connected to the connection electrode 135 through the sixth contact hole CH6. Therefore, in each sub-pixel SP, the first anode AE1 can be electrically connected to the drain electrode 123 of the first driving transistor Td1 through the connection electrode 135.

[0138] Furthermore, the connection structure between the first anode AE1 and the first driving transistor Td1 described above is only an example, and other connection structures can also be implemented.

[0139] As described above, in this exemplary embodiment, the infrared light-emitting diode IRLD or infrared photodiode IRPD can be configured to be located below the light-emitting diode OD, and a dielectric layer DEL is inserted between the infrared light-emitting diode IRLD or infrared photodiode IRPD and the light-emitting diode OD.

[0140] As an example, the first anode AE1 of the light-emitting diode OD, the second cathode CE2 of the infrared light-emitting diode IRLD or infrared photodiode IRPD below the first anode AE1, and the dielectric layer DEL therebetween can be configured to achieve the characteristic of reflecting visible light and transmitting infrared light IR, that is, selective transmission characteristics (or selective reflection characteristics).

[0141] As an example, the second cathode CE2, the dielectric layer DEL, and the first anode AE1, which are stacked sequentially in the vertical direction, can serve as a structure that selectively transmits and reflects light according to wavelength (i.e., a selective transmission structure).

[0142] To achieve this selective transmission structure, for example, the first anode AE1 and the second cathode CE2 can be formed of metals with high reflectivity, such as Ag, Cu, Al, etc., and made of a dielectric material (e.g., Al2O3). x SiO2, SiN x The dielectric layer DEL formed by (etc.) can be inserted between the first anode AE1 and the second cathode CE2. Here, the first anode AE1 and the second cathode CE2 can be formed of the same metal or different metals. In addition, the refractive index of the dielectric layer DEL can be, for example, about 1.5 to 2.5, but is not limited thereto.

[0143] Thus, the selective transmission structure configured with the second cathode CE2, the dielectric layer DEL, and the first anode AE1 can have a sandwich structure of metal layer / dielectric layer / metal layer.

[0144] By controlling the thickness of the sandwich structure of metal layer / dielectric layer / metal layer, the transmittance and reflectance of the selective transmission structure can be set according to the wavelength.

[0145] In this regard, in this exemplary embodiment, the thicknesses of the second cathode CE2, the dielectric layer DEL, and the first anode AE1 can be adjusted so that the selective transmission structure can reflect the colored light expressed by the sub-pixel SP, such as red, green, and blue light, and transmit infrared IR.

[0146] For example, the first thickness t1 of the first anode AE1 formed of metal and the second thickness t2 of the second cathode CE2 formed of metal can be approximately to But it is not limited to this. Here, the first thickness t1 and the second thickness t2 can be the same as or different from each other.

[0147] In addition, the third thickness t3 of the dielectric layer DEL can be approximately to It is greater than each of the first thickness t1 and the second thickness t2, but is not limited thereto.

[0148] In this case, the selective transmission structure can reflect visible light in the red, green, and blue wavelength range and transmit infrared (IR) light, more specifically, infrared (IR) light with a wavelength of approximately 910 nm to 930 nm, but is not limited thereto.

[0149] Reference Figure 7A and Figure 7B Further explanation of the transmission / reflection characteristics of this selective transmission structure. Figure 7A and Figure 7B This is a graph illustrating experimental results of the transmittance and reflectance relative to wavelength for a selective transmission structure with a metal layer / dielectric layer / metal layer configured according to an exemplary embodiment of the present disclosure, wherein... Figure 7A The transmittance is shown. Figure 7B The reflectivity is shown.

[0150] Reference Figure 7A and Figure 7B As can be seen, the selective transmission structure of this exemplary embodiment, configured with a metal layer / dielectric layer / metal layer, has very low transmittance and very high reflectance for the wavelength ranges of red, green, and blue, and very high transmittance and very low reflectance for infrared (IR) wavelengths of approximately 910 nm to 930 nm.

[0151] As described above, in this exemplary embodiment, the selective transmission structure configured with a second cathode CE2, a dielectric layer DEL, and a first anode AE1 can be formed using a sandwich structure of a metal layer / dielectric layer / metal layer, so that the selective transmission structure can reflect visible light in the red, green, and blue wavelength ranges and transmit infrared IR.

[0152] Therefore, visible light generated from the light-emitting diode OD located at the top of the sub-pixel SP can be reflected by the selective transmission structure and transmitted in front of the user's position, thereby improving the emission efficiency of visible light.

[0153] Additionally, infrared light (IR) generated by the infrared light-emitting diode (IRLD) located below the light-emitting diode (OD) within the first sub-pixel SP1 can pass through the selective transmission structure and be transmitted towards the user's position. Furthermore, infrared light (IR) reflected from the user's eye and incident on the second sub-pixel SP2 can pass through the selective transmission structure and be incident on the infrared photodiode (IRPD).

[0154] In this way, by forming a selective transmission structure in the sub-pixel SP, the emission efficiency of visible light can be fully ensured, while infrared IR used to track the user's gaze can be generated and illuminated onto the user's eyes, and the reflected infrared IR can be received and sensed.

[0155] Therefore, the infrared light-emitting diode (IRLD) and infrared photodiode (IRPD), which serve as the eye-tracking module for realizing user eye tracking, can be placed below the light-emitting diode (OD), so that the user eye-tracking module utilizing infrared (IR) light can be effectively embedded in the display panel 100.

[0156] Figure 8A and Figure 8B This is a diagram illustrating user eye tracking via a display panel with a built-in user eye tracking module according to an exemplary embodiment of the present disclosure. Figure 8A It is a diagram showing the user's eyes pointing forward. Figure 8B This is a diagram showing the user's eyes shifting to the left.

[0157] exist Figure 8A and Figure 8B For ease of explanation, an infrared photodiode (IRPD) formed in the second sub-pixel SP2 within the display panel 100 is shown. Additionally, in Figure 8A and Figure 8B In each of these, the upper portion shows the display panel 100 and the eye by overlapping the display panel 100 and the eye, and the lower portion shows the infrared photodiode (IRPD) of the display panel 100 excluding the eye.

[0158] Reference Figure 8A and Figure 8B The pupil E1, iris E2, and sclera E3, which constitute the user's eye, have different reflectivities to infrared light. Therefore, the amount of infrared light reflected from the infrared light-emitting diodes of the display panel 100 and illuminating the eye varies depending on the area of ​​the eye.

[0159] Therefore, the infrared photodiodes (IRPDs) arranged in the display panel 100 sense infrared light with different reflectances depending on the area of ​​the eye to obtain an eye image, and by analyzing this image, gaze information including eye position and blinking can be obtained.

[0160] As described above, according to this exemplary embodiment, the infrared light-emitting diode (LED) and infrared photodiode, which serve as the gaze tracking module for realizing user gaze tracking, can be formed in corresponding sub-pixels below the LED displaying the image, and a dielectric layer is interposed between the infrared LED and the infrared photodiode and the LED. Here, the cathode, dielectric layer, and anode of each of the infrared LED and infrared photodiode can be formed as a sandwich structure of metal layer / dielectric layer / metal layer, thereby enabling a selective transmission structure that reflects visible light in the wavelength range of red, green, and blue and transmits infrared light.

[0161] In this way, by forming a selective transmission structure in the sub-pixels, the emission efficiency of visible light can be fully ensured, while infrared light used to track the user's gaze can be generated and irradiated onto the user's eyes, and the reflected infrared light (IR) can be received and sensed.

[0162] Therefore, an infrared-based user gaze tracking module can be effectively embedded within the display panel, enabling miniaturization and weight reduction of the head-mounted display device using this panel, while also improving user comfort.

[0163] Those skilled in the art will understand that various modifications and variations can be made to this disclosure without departing from its spirit and scope. Therefore, this disclosure is intended to cover modifications and variations thereof, provided they fall within the scope of the appended claims and their equivalents.

[0164] Cross-references to related applications

[0165] This application claims the priority of Korean Patent Application No. 10-2024-0117298, filed in Korea on August 30, 2024, which is incorporated herein by reference in its entirety for all purposes, as if fully set forth herein.

Claims

1. A display device comprising: a substrate including a first sub-pixel; an infrared light emitting diode in the first sub-pixel on the substrate, and in which a second anode, an infrared emission layer, and a second cathode are stacked; a dielectric layer on the infrared light emitting diode; and a light emitting diode in the first sub-pixel, and in which a first anode, a light emitting layer, and a first cathode are stacked on the dielectric layer, wherein a structure configured with the second cathode, the dielectric layer, and the first anode reflects visible light and transmits infrared rays.

2. The display device according to claim 1, the substrate further including a second sub-pixel, wherein, wherein the display device further includes an infrared photodiode in the second sub-pixel on the substrate, and in which a third anode, an infrared receiving layer, and a third cathode are stacked, and wherein the dielectric layer is further on the infrared photodiode, and the light emitting diode is further in the second sub-pixel. a structure configured with the third cathode, the dielectric layer, and the first anode reflects visible light and transmits infrared rays.

3. The display device of claim 2, wherein, a structure configured with the second cathode, the dielectric layer, and the first anode and a structure configured with the third cathode, the dielectric layer, and the first anode reflect red light, green light, and blue light, and transmit the infrared rays having a wavelength in a range of 910 nm to 930 nm.

4. The display device of claim 3, wherein, each of a first thickness of the first anode, a second thickness of the second cathode, and a third thickness of the third cathode is in a range of to and a fourth thickness of the dielectric layer is in a range of to .

5. The display device according to claim 3, wherein Each of the first anode, the second cathode, and the third cathode is formed of a metal.

6. The display device according to claim 3, wherein 8. The display device according to claim 2, further comprising a reflective electrode between the substrate and the second anode and between the substrate and the third anode.

7. The display device of claim 6, wherein, Each of the first anode, the second cathode, and the third cathode comprises Ag, Cu, or Al, and the dielectric layer comprises AI2O x , SiO2, or SiN x . The reflective electrode is configured to reflect the infrared rays.

9. The display device of claim 8, wherein, 10. The display device according to claim 2, further comprising: a first drive transistor and a second drive transistor in the first sub-pixel, the first drive transistor connected to the light emitting diode, the second drive transistor connected to the infrared light emitting diode; and the first drive transistor and a switching transistor in the second sub-pixel, the first drive transistor connected to the light emitting diode, the switching transistor connected to the infrared photodiode. The first sub-pixel and the second sub-pixel are arranged along a row line and / or a column line.

11. The display device according to claim 2, wherein Each of the second cathode and the third cathode extends along a row line or a column line, 12. The display device according to claim 2, wherein wherein a low potential voltage is applied to the second cathode of the infrared light emitting diode, and wherein a bias voltage is applied to the third cathode of the infrared photodiode.

13. The display device according to claim 1, further comprising a bank formed at a boundary of each of the first sub-pixel and a second sub-pixel and including a first bank layer and a second bank layer, an edge of the first anode extends above an upper surface of the first bank layer, and is covered by the second bank layer. wherein, ​ 14. The display device of claim 13, wherein, a contact hole is formed in the first bank, wherein the first anode is connected to a connection electrode through the contact hole, and wherein the connection electrode is connected to a drain electrode of a transistor.

15. The display device of claim 2, wherein, The substrate further includes a third sub-pixel in which the infrared light emitting diode and the infrared photodiode are not disposed.

16. The display device of claim 1, wherein, The dielectric layer has a refractive index of 1.5 to 2.

5.

17. The display device of claim 2, wherein, The first sub-pixel and the second sub-pixel are uniformly arranged in the substrate.

18. A display device comprising: a substrate including a plurality of sub-pixels; a light emitting diode in one of the plurality of sub-pixels and emitting visible light; an infrared light emitting diode or an infrared photodiode positioned below the light emitting diode in the one of the plurality of sub-pixels, the infrared light emitting diode emitting infrared rays, the infrared photodiode receiving the infrared rays; and a dielectric layer interposed between a first anode of the light emitting diode and a second cathode of the infrared light emitting diode or the infrared photodiode, a structure configured with the second cathode, the dielectric layer, and the first anode reflects red, green, and blue light, and transmits the infrared rays having a wavelength in a range of 910 nm to 930 nm. wherein each of the first anode and the second cathode is formed of a metal and has a thickness in a range of to and wherein the dielectric layer has a thickness in the range of to .

19. The display device of claim 18, wherein, 21. The display device of claim 18, further comprising a reflective electrode between the substrate and the infrared light emitting diode or the infrared photodiode.

20. The display device of claim 18, wherein, Each of the first anode and the second cathode comprises Ag, Cu or Al, and the dielectric layer comprises AI2O x , SiO2or SiN x .

22. A head-mounted display apparatus comprising: the display device according to any one of claims 1 to 21; and an apparatus frame on which the display device is mounted. An amount of reflection of the infrared rays generated from the infrared light emitting diode and irradiated to an eye of a user has a difference according to a region of the eye.

23. The head-mounted display device of claim 22, wherein, ​

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