Color conversion substrate, preparation method thereof and display panel comprising color conversion substrate

Abstract

The invention provides a color conversion substrate, a preparation method of the color conversion substrate and a display panel comprising the color conversion substrate. The color conversion substrate comprises a substrate body, and one side of the substrate body comprises a plurality of sub-pixel areas arranged in an array mode; the color conversion substrate further comprises a first pixel definition layer which is located on the side, away from the substrate, of the light-emitting device and comprises opening areas in one-to-one correspondence with the sub-pixel areas. The multiple quantum dot layers are located in at least part of the open sub-pixel areas; each quantum dot layer comprises a first sub-layer and a second sub-layer located on the side, away from the substrate, of the first sub-layer; the first sub-layer comprises a first base material, first scattering particles and quantum dots; the second sub-layer comprises a second base material, second scattering particles and quantum dots; the scattering particle concentration in the first sub-layer is smaller than that in the second sub-layer, the quantum dot concentration in the first sub-layer is larger than that in the second sub-layer, and the first substrate and the second substrate are cured photoresist.

Description

Technical Field

[0001] This application relates to the field of quantum dot color conversion technology, and more specifically, to a color conversion substrate, a method for preparing the substrate, and a display panel containing the substrate. Background Technology

[0002] Currently, quantum dot color conversion technology is widely used in the market to achieve high color gamut displays, such as OLED superimposed with quantum dot color conversion, or microLED superimposed with quantum dot color conversion. However, using quantum dot materials for color conversion brings other problems, the most prominent of which is how to ensure blue light absorption while addressing the issue of photoresist residue during development. Summary of the Invention

[0003] The purpose of this application is to provide a color conversion substrate, its preparation method, and a display panel containing the same, to solve the technical problems of high scattering particle concentration leading to increased blue light absorption but significant photolithography residue, and low scattering particle concentration resulting in no photolithography residue but lower blue light absorption.

[0004] To address the aforementioned technical problems, a first aspect of this application provides a color conversion substrate. The color conversion substrate includes a substrate, one side of which includes a plurality of sub-pixel regions arranged in an array. The color conversion substrate also includes a plurality of quantum dot layers located within at least a portion of the sub-pixel regions. Each quantum dot layer includes a first sub-layer and a second sub-layer located on the side of the first sub-layer facing away from the substrate. The first sub-layer includes a first substrate, first scattering particles, and quantum dots. The second sub-layer includes a second substrate, second scattering particles, and quantum dots. The concentration of scattering particles in the first sub-layer is less than the concentration of scattering particles in the second sub-layer, and the concentration of quantum dots in the first sub-layer is greater than the concentration of quantum dots in the second sub-layer. The first substrate and the second substrate are cured photoresist.

[0005] Furthermore, the mass percentage of quantum dots in the first sublayer is greater than or equal to 30% and less than or equal to 60%, and the mass percentage of quantum dots in the second sublayer is greater than or equal to 25% and less than or equal to 40%.

[0006] Furthermore, the first scattering particle has a mass percentage of 5% or more and less than or equal to 15% in the first sublayer; the second scattering particle has a mass percentage of 10% or more and less than or equal to 25% in the second sublayer.

[0007] Furthermore, the thickness of the first sublayer is 1 to 3 micrometers, and the thickness of the second sublayer is 1 to 8 micrometers; preferably, the thickness of the first sublayer is less than or equal to the thickness of the second sublayer.

[0008] Furthermore, the first quantum dot layer and the second quantum dot layer also include a dispersant.

[0009] Furthermore, the multiple sub-pixel regions include: multiple red sub-pixel regions, multiple green sub-pixel regions, and multiple blue sub-pixel regions; the multiple quantum dot layers include: a red quantum dot layer located within the red sub-pixel regions, and a green quantum dot layer located within the green sub-pixel regions.

[0010] Furthermore, the multiple sub-pixel regions arranged in the array are formed through openings in the pixel definition layer on the substrate.

[0011] A second aspect of this application provides a method for preparing a color conversion substrate according to any one of the above-mentioned methods, comprising: S1, preparing a substrate, uniformly distributing a first quantum dot negative photoresist corresponding to a first sub-layer on one side of the substrate having multiple sub-pixel regions, and then baking for a first time to dry, thereby obtaining a substrate containing a pre-cured first photoresist layer; S2, continuing to uniformly distributing a second quantum dot negative photoresist corresponding to a second sub-layer on the substrate containing the pre-cured first photoresist layer, and then baking for a second time to dry, thereby obtaining a substrate containing a pre-cured first photoresist layer and a pre-cured second photoresist layer; S3, distributing a mask with an array of holes above the substrate containing the pre-cured first photoresist layer and the pre-cured second photoresist layer, and allowing ultraviolet light to pass through the mask to cure the portions corresponding to the first and second photoresist layers, thereby obtaining a first intermediate workpiece; S4, developing the first intermediate workpiece to remove excess first and second photoresist layers, thereby obtaining a second intermediate workpiece; S5, performing a post-baking process on the second intermediate workpiece to obtain a quantum dot layer located in at least a portion of the sub-pixel regions, wherein the quantum dot layer includes a first sub-layer and a second sub-layer.

[0012] Furthermore, S1 to S5 were repeated on the same substrate, but with different photoresists, to obtain a green quantum dot layer, a red quantum dot layer, and a blank photoresist layer, respectively.

[0013] A third aspect of this application provides a display panel, which includes any of the color conversion substrates described above, and also includes a plurality of light-emitting devices located on any side of a substrate; the light-emitting devices correspond one-to-one with sub-pixel areas.

[0014] By applying the above technical solution, high blue light absorption can be achieved while meeting the requirement of low photoresist development residue. Attached Figure Description

[0015] The accompanying drawings, which form part of this application, are used to provide a further understanding of this application. The illustrative embodiments and descriptions of this application are used to explain this application and do not constitute an undue limitation of this application. In the drawings:

[0016] Figure 1 This is a schematic diagram of the structure of a color conversion substrate according to some embodiments of this application.

[0017] Figure 2This is a schematic diagram of the structure of a color conversion substrate according to some embodiments of this application.

[0018] Figure 3 This is a schematic diagram of the structure of a color conversion substrate according to some other embodiments of this application.

[0019] Figure 4 This is a schematic diagram illustrating the fabrication process of the red quantum dot layer on the color conversion substrate, which is shown in some embodiments of this application.

[0020] Figure 5 For some embodiments of this application, the color conversion substrate is in Figure 4 A schematic diagram of the fabrication process for preparing a green quantum dot layer based on this.

[0021] Figure 6 This is a schematic diagram of the structure of a display panel according to some embodiments of this application.

[0022] Figure 7 This is a schematic diagram of the structure of a display panel according to some other embodiments of this application.

[0023] Figure 8 Microscopic photographs of color conversion substrates for specific embodiments and comparative examples of this application.

[0024] 1. Color conversion substrate; 11. Substrate; 12A. Pre-cured first adhesive layer; 12B. Pre-cured second adhesive layer; 12R. Red quantum dot layer; 121R. Red first sublayer; 122R. Red second sublayer; 12G. Green quantum dot layer; 121G. Green first sublayer; 122G. Green second sublayer; 12B. Blank adhesive layer; 13. Pixel definition layer; 111. Transparent substrate; 112. Light blocking layer; 113. Smoothing layer; 114R. Red color filter layer; 114G. Green color filter layer; 114B. Blue color filter layer; 21. Light-emitting device substrate; 22. Light-emitting device; 23. Transparent dielectric layer. Detailed Implementation

[0025] It should be noted that the following detailed descriptions are illustrative and intended to provide further explanation of this application. Unless otherwise specified, all technical and scientific terms used herein have the same meaning as commonly understood by one of ordinary skill in the art to which this application pertains.

[0026] According to a first aspect of this application, a color conversion substrate is provided. The color conversion substrate includes a substrate, one side of which includes a plurality of sub-pixel regions arranged in an array. The color conversion substrate also includes a plurality of quantum dot layers located within at least a portion of the sub-pixel regions. Each quantum dot layer includes a first sub-layer and a second sub-layer located on the side of the first sub-layer facing away from the substrate. The first sub-layer includes a first substrate, first scattering particles, and quantum dots. The second sub-layer includes a second substrate, second scattering particles, and quantum dots. The concentration of scattering particles in the first sub-layer is lower than that in the second sub-layer, and the concentration of quantum dots in the first sub-layer is higher than that in the second sub-layer. The first substrate and the second substrate are cured photoresist. This color conversion substrate can achieve high blue light absorption while meeting the requirement of low photoresist development residue.

[0027] The substrate material is not limited and can be a combination of inorganic compounds and organic compounds. In some embodiments, the mass percentage of quantum dots in the first sublayer is greater than or equal to 30% and less than or equal to 60%, and the mass percentage of quantum dots in the second sublayer is greater than or equal to 25% and less than or equal to 40%.

[0028] In some embodiments, the first substrate and the second substrate are products of negative photoresist cured. In some embodiments, the mass percentage of the first scattering particles in the first sublayer is greater than or equal to 5% and less than or equal to 15%; the mass percentage of the second scattering particles in the second sublayer is greater than or equal to 10% and less than or equal to 25%.

[0029] The shape of the sub-pixel region is not limited and can be circular, square, rectangular, or elongated. The shape of the sub-pixel region can be controlled by surface properties or by a pixel definition layer.

[0030] In some embodiments, the scattering particles are selected from inorganic scattering particles, such as TiO2, SiO2, BaTiO3, BaO, ZnO, Al2O3, and hollow silicon dioxide.

[0031] In some embodiments, the scattering particles may include a variety of scattering particles, and the median diameter (D50) of the variety of scattering particles may be in the range of about 50 nm to about 500 nm. The first scattering particle and the second scattering particle may be the same or different.

[0032] In some embodiments, the quantum dots are selected from group II-VI semiconductor compounds, group I-II-VI semiconductor compounds, group II-IV-VI compounds, group I-II-IV-VI semiconductor compounds, group III-V semiconductor compounds, group III-II-V semiconductor compounds, group III-VI semiconductor compounds, group I-III-VI semiconductor compounds, group IV-VI semiconductor compounds, group II-IV-V semiconductor compounds, group IV semiconductor compounds, group IV elements, mixtures thereof, and compounds thereof.

[0033] The full width at half maximum (FWHM) of the emission spectrum of quantum dots can be less than or equal to about 45 nm. For example, the FWHM of the emission spectrum of quantum dots can be less than or equal to about 40 nm. For example, the FWHM of the emission spectrum of quantum dots can be less than or equal to about 30 nm. Within this range, color purity or color reproducibility can be improved. Light emitted through such quantum dots can be emitted in all directions, and the viewing angle can be improved. The shapes of quantum dots can be spherical, pyramidal, multi-armed, cubic nanoparticles, nanotubes, nanowires, nanofibers, nanoplate particles, etc.

[0034] In some embodiments, the thickness of the first sublayer is 1-3 micrometers, and the thickness of the second sublayer is 1-8 micrometers; preferably, the thickness of the first sublayer is less than or equal to the thickness of the second sublayer. In some embodiments, the thickness of the quantum dot layer is 2-4 micrometers.

[0035] In some embodiments, the first quantum dot layer and the second quantum dot layer further include a dispersant. The dispersant may be selected from one or more of alkyl acrylate phosphates and 2-hydroxyethyl methacrylate phosphates. For example, PM1560, PM1590, PM1510SP, PM1500EC, or PM2010SP from Zhejiang Jingde Chemical Materials Co., Ltd.

[0036] In some embodiments, the plurality of sub-pixel regions include: a plurality of red sub-pixel regions, a plurality of green sub-pixel regions, and a plurality of blue sub-pixel regions; the plurality of quantum dot layers include: a red quantum dot layer located within the red sub-pixel regions, and a green quantum dot layer located within the green sub-pixel regions. The thicknesses of the different colored quantum dot layers may be the same or different. Figure 1 The blue sub-pixel region is not shown. Both the red and green quantum dot layers include a first sub-layer and a second sub-layer. The blue sub-pixel region may be composed of a light-transmitting medium, and the blue light is provided by a backlight-emitting device.

[0037] In some embodiments, the array of multiple sub-pixel regions is formed through openings in a pixel definition layer on a substrate. For example... Figure 2 As shown, the red, green, and blue sub-pixel areas are defined by a pixel definition layer.

[0038] The pixel definition layer can be formed using a polymer resin. For example, the pixel definition layer may contain a polyacrylate-based resin or a polyimide-based resin. In another embodiment, the pixel definition layer may contain inorganic materials in addition to the polymer resin. In one embodiment, the pixel definition layer may contain a light-absorbing material, a black pigment, or a black dye. A pixel definition layer containing a black pigment or black dye may be a black pixel definition layer. Carbon black or the like can be used as the black pigment or black dye when forming the pixel definition layer, but this disclosure is not limited thereto.

[0039] In some embodiments, and in another embodiment, the pixel definition layer may include an inorganic material. For example, the pixel definition layer may include silicon nitride (SiN). x Inorganic materials such as silicon dioxide (SiO2) x） Silicon oxynitride (SiO) x N y (or similar items)

[0040] The structure of the substrate can be designed according to requirements, such as adding a color filter layer. In some embodiments, such as... Figure 3 As shown, the substrate includes a smoothing layer, a red color filter layer, a green color filter layer, a blue color filter layer, a light blocking layer, and a transparent substrate (light-emitting side). The color filter layers and quantum dot layers correspond one-to-one to match the application requirements of the display panel.

[0041] According to a second aspect of this application, a method for preparing a color conversion substrate according to any one of the above-mentioned methods is provided, comprising: S1, preparing a substrate, uniformly distributing a first quantum dot negative photoresist corresponding to a first sub-layer on one side of the substrate having a plurality of sub-pixel regions, and then baking for a first time to dry, thereby obtaining a substrate containing a pre-cured first photoresist layer; S2, continuing to uniformly distributing a second quantum dot negative photoresist corresponding to a second sub-layer on the substrate containing the pre-cured first photoresist layer, and then baking for a second time to dry, thereby obtaining a substrate containing a pre-cured first photoresist layer and a pre-cured second photoresist layer; S3, distributing a mask with an array of holes above the substrate containing the pre-cured first photoresist layer and the pre-cured second photoresist layer, and allowing ultraviolet light to pass through the mask to cure the portions corresponding to the first and second photoresist layers, thereby obtaining a first intermediate workpiece; S4, developing the first intermediate workpiece to remove excess first and second photoresist layers, thereby obtaining a second intermediate workpiece; S5, performing a post-baking process on the second intermediate workpiece to obtain a quantum dot layer located in at least a portion of the sub-pixel regions, the quantum dot layer comprising the first and second sub-layers. Because the first photoresist layer has a relatively low concentration of scattering particles, it is less likely to leave residues. The second photoresist layer has a relatively high concentration of scattering particles, but any residue from the second layer is mainly on the surface of the first layer and can be removed during development and rinsing, achieving a residue-free effect. The first layer has a high quantum dot concentration and is the main photoresist layer responsible for color conversion. Simultaneously, the first layer has few scattering particles, resulting in virtually no residue after exposure and development. This mitigates or avoids the color mixing problems caused by high scattering particle residue in overall photolithography.

[0042] like Figure 4 As shown in the figure, the top figure shows the state after step S1 is completed, the middle figure shows the state after step S2 is completed, and the bottom figure shows the state after steps S3-S5 are completed.

[0043] In some embodiments, steps S1 to S5 are repeated on the same substrate, but different photoresists are used to obtain a green quantum dot layer, a red quantum dot layer, and a blank photoresist layer, respectively. The fabrication order of the green quantum dot layer, red quantum dot layer, and blank photoresist layer is not limited, and all are prepared by photolithography. Figure 5 As shown, it illustrates in Figure 4 After the red quantum dot layer is fabricated, a green quantum dot layer is fabricated on top of it using photolithography.

[0044] In some embodiments, the pixel definition layer is prepared during the substrate preparation stage and obtained by photolithography.

[0045] According to a third aspect of this application, a display panel is provided, the display panel including a color conversion substrate as described above, and further including a plurality of light-emitting devices located on any side of a substrate; the light-emitting devices correspond one-to-one with sub-pixel areas.

[0046] The light-emitting device can be an LED (microLED, etc.), a QLED, or an OLED. The light-emitting device can be a blue light-emitting device.

[0047] like Figure 6 As shown, the light-emitting device is disposed on the side of the substrate away from the quantum dot layer shown, such as... Figure 7 As shown, the light-emitting device is disposed on one side of the quantum dot layer on the substrate.

[0048] The connection method between the light-emitting device and the color conversion substrate follows existing technology. In some embodiments, the light-emitting device and the color conversion substrate are connected through a transparent dielectric layer, such as... Figure 6 or Figure 7 As shown in the image.

[0049] In some embodiments, the transparent dielectric layer may serve at least one function as an adhesive or encapsulator. The transparent dielectric layer may comprise multiple layers or materials, or it may function as an impact absorber and enhance the strength of the display panel. The transparent dielectric layer may be formed from a filler resin containing a polymer resin. For example, the transparent dielectric layer may be formed from a filler resin containing acrylic resin, epoxy resin, etc.

[0050] The implementation methods are described in more detail below with reference to specific embodiments. However, these are exemplary examples of the content of this application, and the content of this application is not limited thereto.

[0051] Quantum dot photoresist solution (QDPR) preparation:

[0052] Weigh 5g of a 40% mass concentration PGMEA solution containing scattering particles (titanium dioxide particles with an average particle size of 100-300nm) and add it dropwise to a 40% quantum dot mass concentration PGMEA solution containing 10g of PGMEA solvent. Stir until homogeneous. Next, add 15g of blank photoresist (negative) solution (40% solid content) and stir until homogeneous to prepare the final quantum dot photoresist solution. After PGMEA evaporation, the corresponding dry film quantum dot mass concentration is 33.3%, and the scattering particle concentration is 16.7%, abbreviated as Q33.3% / S16.7%. Other concentrations of QDPR are prepared according to the aforementioned method. The QDPR formulations or dry film compositions of each embodiment and comparative example are shown in Table 1. QDPR (bottom) corresponds to the formation of the first sublayer, and QDPR (top) corresponds to the formation of the second sublayer.

[0053] Table 1

[0054]

[0055]

[0056] Each embodiment was fabricated according to the preparation process of double-layer quantum dot photoresist, and special features are described below.

[0057] S1: Place a glass slide with dimensions of 5*5*0.05cm onto the vacuum suction cup of the spin coater. Use a pipette to drop 150uL QDPR (bottom) onto the center of the glass slide. Adjust the rotation speed to 1000rpm / min, the acceleration to 200rpm / s, and the time to 30s to perform spin coating.

[0058] S2: Pre-baking 1: Place the glass slide with the wet film on the hot stage and bake at 100℃-120℃ for 5 minutes to remove most of the solvent; measure the film thickness with a step meter and record the data.

[0059] S3: Adsorb the pre-baked glass slide onto the vacuum suction cup of the spin coater, take 150uL QDPR (top) with a pipette and drop it into the center of the glass slide, adjust the rotation speed to 1000rpm / min, acceleration to 200rpm / s, and time to 30s to perform spin coating.

[0060] S4: Pre-baking 2, place the glass slide with the wet film on the hot stage and bake at 100℃-120℃ for 5 minutes to remove most of the solvent;

[0061] S5: Contact exposure, 365nm UV curing, 300mJ exposure;

[0062] S6: Immersion development, immerse the glass slide of S5 in 0.045% KOH developer for 60 seconds to wash away excess photoresist layer in the unexposed area, leaving the photomask pattern;

[0063] S7: Post-baking: Place the glass slide on a 130℃ heating table for annealing for 30 minutes to remove residual solvent and achieve a hardened film effect.

[0064] S8: Use a profilometer to measure film thickness and record data; measure the line width CD of the photolithographic pattern under a microscope to observe the pattern morphology and development residue.

[0065] The difference between Example 9 and the general method of the above examples is that the rotation speed of QDPR (bottom) spin coater is 1200 r / min, and the rotation speed of QDPR (top) spin coater is 800 r / min.

[0066] The comparative sample was prepared using the same process as a single-layer quantum dot photoresist.

[0067] S1: Place a glass slide with dimensions of 5*5*0.05cm onto the vacuum suction cup of the spin coater. Use a pipette to drop 150uL QDPR (bottom) onto the center of the glass slide. Adjust the rotation speed to 300rpm / min, the acceleration to 200rpm / s, and the time to 30s to perform spin coating.

[0068] S2: Pre-baking 1: Place the glass slide with the wet film on the hot stage and bake at 100℃-120℃ for 5 minutes to remove most of the solvent;

[0069] S3: Contact exposure, 365nm UV curing, 300mJ exposure;

[0070] S4: Immersion development, immerse the glass slide obtained in S3 in 0.045% KOH developer for 60s to wash away excess photoresist layer in the unexposed area, leaving the photomask pattern;

[0071] S5: Post-baking: Place the glass slide on a 130℃ heating table for annealing for 30 minutes to remove residual solvent and achieve a hardened film effect.

[0072] S6: Measure film thickness using a profilometer and record the data; measure the linewidth (CD) of the photolithographic pattern under a microscope and observe the pattern morphology and residual development.

[0073] Performance testing

[0074] The undeveloped quantum dot photoresist glass slide after exposure curing was placed in a large integrating sphere, and its blue light absorption rate (Abs) was tested. The results are shown in Table 2.

[0075] Table 2

[0076]

[0077] Results analysis:

[0078] Comparative Example 1 (dry film Q30% / S20%) showed good blue light absorption (99.5%), but significant residue remained after photolithography and development (see [link]). Figure 8 (Microscopic image of Comparative Example 1); Conversely, if Comparative Example 2 (dry film Q42% / S8%) is used, there is no residue in the photolithography development, but the blue light absorption is greatly reduced (84.5%), which cannot meet the product requirements. The use of a double-layer structure can effectively solve the problem of photoresist development residue under high blue light absorption, ensuring blue light absorption while eliminating residue, with significant effect.

[0079] In the bilayer structure, as the concentration of scattered particles in the QDPR (lower) layer increases, the residue phenomenon gradually becomes more pronounced, ranging from no residue to slight residue, moderate residue, and severe residue. The results indicate that the dry film Q42% / S8% is the best material for the first sublayer. Then, using the dry film Q42% / S8% as the first sublayer material, the concentration of scattered particles in the second sublayer was optimized. Blue light absorption initially increased with increasing scattered particle concentration, and then decreased with further decreases in quantum dot concentration. In summary, Example 2 showed the best overall performance. Furthermore, in Example 9, by adjusting the film thickness of the two sublayers, the blue light absorption was increased from 97.2% to 99.5% under the same formulation.

[0080] The above description is merely a preferred embodiment of this application and is not intended to limit this application. Various modifications and variations can be made to this application by those skilled in the art. Any modifications, equivalent substitutions, improvements, etc., made within the spirit and principles of this application should be included within the protection scope of this application.

Claims

1. A color conversion substrate, characterized by, The color conversion substrate comprises a substrate, one side of the substrate comprising an array of a plurality of sub-pixel regions; the color conversion substrate further comprises a plurality of quantum dot layers located in at least part of the sub-pixel regions; each of the quantum dot layers comprises: a first sub-layer, and a second sub-layer located on the side of the first sub-layer away from the substrate; the first sub-layer comprises: a first base material, first scattering particles, and quantum dots; the second sub-layer comprises: a second base material, second scattering particles, and the quantum dots; the concentration of scattering particles in the first sub-layer is less than the concentration of scattering particles in the second sub-layer, the concentration of quantum dots in the first sub-layer is greater than the concentration of quantum dots in the second sub-layer, and the first base material and the second base material are cured photoresist.

2. The color conversion substrate according to claim 1, characterized by The mass percentage of the quantum dots in the first sub-layer is greater than or equal to 30% and less than or equal to 60%, and the mass percentage of the quantum dots in the second sub-layer is greater than or equal to 25% and less than or equal to 40%.

3. The color conversion substrate according to claim 1, wherein The mass percentage of the first scattering particles in the first sub-layer is greater than or equal to 5% and less than or equal to 15%, and the mass percentage of the second scattering particles in the second sub-layer is greater than or equal to 10% and less than or equal to 25%.

4. The color conversion substrate according to claim 1, wherein The thickness of the first sub-layer is 1-3 microns, and the thickness of the second sub-layer is 1-8 microns; preferably, the thickness of the first sub-layer is less than or equal to the thickness of the second sub-layer.

5. The color conversion substrate according to claim 1, wherein The first quantum dot layer and the second quantum dot layer further comprise a dispersing agent.

6. The color conversion substrate according to any one of claims 1 to 5, wherein The plurality of sub-pixel regions comprises: a plurality of red sub-pixel regions, a plurality of green sub-pixel regions, and a plurality of blue sub-pixel regions; the plurality of quantum dot layers comprises: a red quantum dot layer located in the red sub-pixel region, and a green quantum dot layer located in the green sub-pixel region.

7. The color conversion substrate according to any one of claims 1 to 5, wherein The array of a plurality of sub-pixel regions is formed by an opening of a pixel definition layer on the substrate.

8. A method for producing a color conversion substrate according to any one of claims 1 to 7, characterized by, Comprising: S1, preparing the substrate, uniformly setting the first quantum dot negative photoresist corresponding to the first sub-layer on the side of the substrate having the plurality of sub-pixel regions, and then baking for a first time to dry, obtaining a substrate containing a pre-cured first glue layer; S2, uniformly setting the second quantum dot negative photoresist corresponding to the second sub-layer on the substrate containing the pre-cured first glue layer, and then baking for a second time to dry, obtaining a substrate containing a pre-cured first glue layer and a pre-cured second glue layer; S3, setting a mask plate with array holes above the substrate containing the pre-cured first glue layer and the pre-cured second glue layer, and using ultraviolet light to pass through the mask plate to cure the corresponding part of the first glue layer and the second glue layer, obtaining a first intermediate workpiece; S4, developing the first intermediate workpiece to remove excess first glue layer and second glue layer, obtaining a second intermediate workpiece; S5, performing post-baking treatment on the second intermediate workpiece, obtaining quantum dot layers located in at least part of the sub-pixel regions, the quantum dot layers comprising the first sub-layer and the second sub-layer.

9. The method for manufacturing a color conversion substrate according to claim 8, wherein S1 to S5 are repeated on the same substrate, but using different photoresists, to obtain a green quantum dot layer, a red quantum dot layer and a blank photoresist layer, respectively.

10. A display panel, characterized by, The display panel comprises the color conversion substrate according to any one of claims 1 to 7, and further comprises a plurality of light emitting devices on any side of the substrate; the light emitting devices correspond to the sub-pixel regions one by one.

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