Control method of photoelectric device, photoelectric device and display equipment

Abstract

The invention discloses a control method of a photoelectric device, a photoelectric device and display equipment, and the control method comprises the following steps: providing the photoelectric device which comprises a light-emitting layer; and applying a driving voltage to the photoelectric device, wherein the driving voltage comprises a positive voltage and a negative voltage which are alternately applied. In the technical scheme provided by the invention, the positive voltage and the negative voltage are alternately applied to the photoelectric device, the accumulated voltage is released by utilizing the intermittent negative voltage while the device is driven to emit light, and the charge accumulation in the working process of the device is eliminated, so that the service life of the device is prolonged.

Description

Technical Field

[0001] This application relates to the field of optoelectronic device technology, and in particular to a control method for an optoelectronic device, an optoelectronic device, and a display device. Background Technology

[0002] Optoelectronic devices emit light by releasing energy through the recombination of electrons and holes, and are widely used in technologies such as displays and lighting. The performance of optoelectronic devices is mainly reflected in aspects such as brightness, lifespan, and power consumption. As living standards improve, users have increasingly higher requirements for the performance of optoelectronic devices.

[0003] In some optoelectronic devices, there is an imbalance between electron injection and hole injection, which leads to charge accumulation in the light-emitting layer. This makes it easier for electrons and holes injected into the light-emitting layer to recombine via Auger recombination when forming excitons, thus affecting the device lifetime. Summary of the Invention

[0004] In view of this, this application provides a control method for optoelectronic devices, an optoelectronic device, and a display device.

[0005] The embodiments of this application are implemented as follows:

[0006] In a first aspect, embodiments of this application provide a method for controlling an optoelectronic device, comprising the following steps:

[0007] A photoelectric device is provided, the photoelectric device including a light-emitting layer;

[0008] A driving voltage is applied to the optoelectronic device, the driving voltage comprising alternately applied positive and negative voltages.

[0009] Secondly, embodiments of this application provide an optoelectronic device, comprising:

[0010] Optoelectronic devices, including a light-emitting layer; and,

[0011] The driving module is electrically connected to the optoelectronic device and is used to provide alternating positive and negative voltages to the optoelectronic device.

[0012] Thirdly, embodiments of this application provide a display device including the aforementioned optoelectronic device.

[0013] In the technical solution proposed in this application, positive and negative voltages are alternately applied to the optoelectronic device. While driving the device to emit light, the accumulated voltage is released by intermittent negative voltages, clearing the charge accumulation during device operation, thereby extending the device's lifespan. Attached Figure Description

[0014] To more clearly illustrate the technical solutions in the embodiments of this application, the accompanying drawings used in the description of the embodiments will be briefly introduced below. Obviously, the accompanying drawings described below are only some embodiments of this application. For those skilled in the art, other drawings can be obtained based on these drawings without creative effort.

[0015] Figure 1 This is a schematic flowchart of an embodiment of a control method for an optoelectronic device provided in this application;

[0016] Figure 2 This is a schematic diagram of the structure of the optoelectronic device in the embodiments of this application;

[0017] Figure 3 This is a waveform diagram of the driving voltage in one embodiment of the control method for an optoelectronic device provided in this application;

[0018] Figure 4 This is a waveform diagram of the driving voltage in another embodiment of the control method for an optoelectronic device provided in this application;

[0019] Figure 5 This is a schematic diagram of an embodiment of an optoelectronic device provided in this application;

[0020] Figure 6 This is a schematic diagram of the circuit structure of the driving module in an embodiment of this application. Detailed Implementation

[0021] The technical solutions in the embodiments of this application will be clearly and completely described below with reference to the accompanying drawings. Obviously, the described embodiments are only some embodiments of this application, and not all embodiments. Based on the embodiments in this application, all other embodiments obtained by those skilled in the art without creative effort are within the scope of protection of this application. In addition, it should be understood that the specific embodiments described herein are only for illustration and explanation of this application and are not intended to limit this application. In this application, unless otherwise stated, directional terms such as "upper" and "lower" specifically refer to the drawing directions in the accompanying drawings. In addition, in the description of this application, the term "including" means "including but not limited to". Various embodiments of this application may exist in the form of a range; it should be understood that the description in the form of a range is only for convenience and conciseness and should not be construed as a hard limitation on the scope of this application; therefore, it should be considered that the range description has specifically disclosed all possible sub-ranges and single values ​​within that range. For example, it should be assumed that the description of a range from 1 to 6 specifically discloses subranges such as from 1 to 3, from 1 to 4, from 1 to 5, from 2 to 4, from 2 to 6, from 3 to 6, etc., as well as single numbers within the range, such as 1, 2, 3, 4, 5, and 6, regardless of the range. Furthermore, whenever a numerical range is referred to herein, it means including any referenced number (fraction or integer) within the range referred to.

[0022] In this application, "and / or" describes the relationship between related objects, indicating that three relationships can exist. For example, A and / or B can represent: A existing alone, A and B existing simultaneously, or B existing alone. A and B can be singular or plural.

[0023] In this application, "at least one" means one or more, and "more than one" means two or more. "At least one," "at least one of the following," or similar expressions refer to any combination of these items, including any combination of single or multiple items. For example, "at least one of a, b, or c," or "at least one of a, b, and c," can both mean: a, b, c, ab (i.e., a and b), ac, bc, or abc, where a, b, and c can be single or multiple.

[0024] In a first aspect, embodiments of this application provide a control method for an optoelectronic device 10, used to drive the optoelectronic device 10 to operate. The optoelectronic device 10 includes, but is not limited to, quantum dot light-emitting diodes (QLEDs), micro LEDs, and sub-millimeter light-emitting diodes (Mini LEDs). See [link to relevant documentation]. Figure 2The optoelectronic device 10 includes a stacked anode 1, a light-emitting layer 4, and a cathode 2. When a forward voltage is applied to the optoelectronic device 10, electrons and holes are injected into the light-emitting layer 4, recombine to form excitons, and emit light. When electron injection and hole injection are unbalanced, charge accumulation occurs in the device, causing the device to heat up and affecting the recombination of electrons and holes.

[0025] The anode 1 and the cathode 2 can each be any anode 1 or cathode 2 known in the art, for example, they can be independently selected from, but not limited to, metal electrodes, carbon electrodes, doped or undoped metal oxide electrodes, and composite electrodes; wherein, the material of the metal electrode is selected from at least one of Al, Ag, Cu, Mo, Au, Ba, Ca, Ni, Ir, and Mg; the material of the carbon electrode is selected from at least one of graphite, carbon nanotubes, graphene, and carbon fibers; the material of the doped or undoped metal oxide electrode is selected from ITO, FTO, ATO, and AZO. The composite electrode material is selected from at least one of the following: GZO, IZO, MZO, ITZO, ICO, AMO, SnO2, In2O3, Cd:ZnO, F:SnO2, In:SnO2, and Ga:SnO2. The composite electrode material is selected from at least one of AZO / Ag / AZO, AZO / Al / AZO, ITO / Ag / ITO, ITO / Al / ITO, ZnO / Ag / ZnO, ZnO / Al / ZnO, TiO2 / Ag / TiO2, TiO2 / Al / TiO2, ZnS / Ag / ZnS, and ZnS / Al / ZnS. Wherein, " / " indicates a stacked structure; for example, the composite electrode AZO / Ag / AZO represents a three-layer stacked composite structure consisting of an AZO layer, an Ag layer, and an AZO layer. The thickness of anode 1 can be, for example, from 10 nm to 100 nm, such as 10 nm, 20 nm, 30 nm, 50 nm, 60 nm, 80 nm, 100 nm, etc. The thickness of cathode 2 can be, for example, from 15 nm to 100 nm, such as 15 nm, 30 nm, 40 nm, 50 nm, 60 nm, 80 nm, 100 nm, etc.

[0026] The material of the light-emitting layer 4 includes quantum dots, and the average particle size of the quantum dots can be 2-20 nm; for example, it can be 2 nm, 3 nm, 5 nm, 8 nm, 10 nm, 13 nm, 15 nm, 17 nm, 20 nm, or any two of the above values. The quantum dots can be selected from, but are not limited to, at least one of single-structure quantum dots, core-shell structure quantum dots, and perovskite semiconductor materials; the shell of the core-shell structure quantum dots includes one or more layers. The material of the single-structure quantum dots, the core material of the core-shell structure quantum dots, and the shell material of the core-shell structure quantum dots are respectively selected from at least one of group II-VI compounds, group IV-VI compounds, group III-V compounds, and group I-III-VI compounds; the group II-VI compounds are selected from CdS, CdSe, CdTe, ZnS, ZnSe, ZnTe, ZnO, HgS, HgSe, HgTe, CdSeS, CdSeTe, CdSTe, ZnSeS, ZnSeTe, ZnSTe, HgSeS, HgSeTe At least one of the following: HgSTe, CdZnS, CdZnSe, CdZnTe, CdHgS, CdHgSe, CdHgTe, HgZnS, HgZnSe, HgZnTe, CdZnSeS, CdZnSeTe, CdZnSTe, CdHgSeS, CdHgSeTe, CdHgSTe, HgZnSeS, HgZnSeTe, and HgZnSTe; the IV-VI compound is selected from SnS, SnSe, SnTe, PbS, PbSe, PbTe, SnSeS, and SnSeT. e, SnSTe, PbSeS, PbSeTe, PbSTe, SnPbS, SnPbSe, SnPbTe, SnPbSSe, SnPbSeTe, SnPbSTe; the III-V compound is selected from at least one of GaN, GaP, GaAs, GaSb, AlN, AlP, AlAs, AlSb, InN, InP, InAs, InSb, GaNP, GaNAs, GaNSb, GaPAs, GaPSb, AlNP, AlNAs, AlNSb, AlPAs, Al At least one of PSb, InNP, InNAs, InNSb, InPAs, InPSb, GaAlNP, GaAlNAs, GaAlNSb, GaAlPAs, GaAlPSb, GaInNP, GaInNAs, GaInNSb, GaInPAs, GaInPSb, InAlNP, InAlNAs, InAlNSb, InAlPAs, and InAlPSb; wherein the I-III-VI group compound is selected from at least one of CuInS2, CuInSe2, and AgInS2.As an example, the quantum dots with a core-shell structure may be selected from, but not limited to, at least one of CdZnSe / CdZnSe / ZnSe / CdZnS / ZnS, CdZnSe / CdZnSe / CdZnS / ZnS CdSe / CdSeS / CdS, InP / ZnSeS / ZnS, CdZnSe / ZnSe / ZnS, CdSeS / ZnSeS / ZnS, CdSe / ZnS, CdSe / ZnSe / ZnS, ZnSe / ZnS, ZnSeTe / ZnS, CdSe / CdZnSeS / ZnS, and InP / ZnSe / ZnS. It should be noted that for the materials of the aforementioned single-structure quantum dots, or the core materials of the core-shell structure quantum dots, or the shell materials of the core-shell structure quantum dots, the provided chemical formulas only indicate the elemental composition and do not indicate the content of each element. For example, CdZnSe only represents being composed of three elements, Cd, Zn, and Se. If the content of each element is to be represented, it corresponds to Cd. x Zn 1-x Se, 0 < x < 1. It can be understood that the core materials of the core-shell structure quantum dots and the materials of each shell layer are expressed by connecting with " / ", and the order from left to right is the material types of the quantum dots from the inside out: core material / first shell layer material / Nth shell layer material, where N is an integer greater than or equal to 1. For example, CdSe / CdZnSeS / ZnS represents a core-shell structure quantum dot with two shell layers, whose core material is CdSe, the material of the first shell layer coated on the core is CdZnSeS, and the material of the second shell layer coated outside the first shell layer is ZnS.

[0027] The perovskite semiconductor material is selected from doped or undoped inorganic perovskite semiconductors, or organic-inorganic hybrid perovskite semiconductors; the structural general formula of the inorganic perovskite semiconductor is AMX3, where A is Cs + ions, M is a divalent metal cation, selected from at least one of Pb 2+ , Sn 2+ , Cu 2+ , Ni 2+ , Cd 2+ , Cr 2+ , Mn 2+ , Co 2+ , Fe 2+ , Ge 2+ , Yb 2+ , Eu 2+ and X is a halogen anion, selected from at least one of Cl - , Br - , I - ; the structural general formula of the organic-inorganic hybrid perovskite semiconductor is BMX3, where B is an organic amine cation, selected from CH3(CH2)n-2 NH3 + Or [NH3(CH2)] n NH3] 2+ Where n≥2, M is a divalent metal cation selected from Pb 2+ Sn 2+ Cu 2+ Ni 2+ Cd 2+ Cr 2+ Mn 2+ Co 2+ Fe 2+ 、Ge 2+ Yb 2+ Eu 2+ At least one of them, where X is a halide anion selected from Cl. - ,Br - I - At least one of the following. The thickness of the light-emitting layer 4 can be from 10nm to 60nm, such as 10nm, 15nm, 20nm, 25nm, 30nm, 40nm, 50nm, 60nm, etc.

[0028] In some embodiments, the optoelectronic device 10 may further include an electronic functional layer disposed between the cathode 2 and the light-emitting layer 4. The electronic functional layer may include one or both of an electron transport layer 3 and an electron injection layer. When the electronic functional layer includes an electron transport layer 3 and an electron injection layer, the electron injection layer is located between the electron transport layer 3 and the cathode 2. The material of the electronic functional layer may be selected from commonly used electronic functional materials in the art. For example, the material of the electron transport layer 3 may be selected from, but is not limited to, at least one of metal oxides, doped metal oxides, group II-VI semiconductor materials, group III-V semiconductor materials, and group I-III-VI semiconductor materials. The metal oxide may be selected from at least one of ZnO, BaO, TiO2, and SnO2; the doped metal oxide may be selected from at least one of ZnO, TiO2, and SnO2, and the doping element may be selected from at least one of Al, Mg, Li, In, and Ga; the group II-VI semiconductor material may be selected from at least one of ZnS, ZnSe, and CdS; the group III-V semiconductor material may be selected from at least one of InP and GaP; and the group I-III-VI semiconductor material may be selected from at least one of CuInS and CuGaS. The material of the electron injection layer may be selected from, but is not limited to, at least one of cesium carbonate, cesium fluoride, cesium azide, and lithium fluoride.

[0029] In some embodiments, the optoelectronic device 10 may further include a hole functional layer disposed between the anode 1 and the light-emitting layer 4. The hole functional layer may include one or both of a hole transport layer 6 and a hole injection layer 5. When the hole functional layer includes a hole transport layer 6 and a hole injection layer 5, the hole injection layer 5 is located between the hole transport layer 6 and the anode 1. The material of the hole functional layer may be selected from commonly used hole functional materials in the art. For example, the material of the hole transport layer 6 may be selected from poly(9,9-dioctylfluorene-CO-N-(4-butylphenyl)diphenylamine) (TFB), polyvinylcarbazole (PVK), poly(N,N'-bis(4-butylphenyl)-N,N'-bis(phenyl)benzidine) (poly-TPD), poly(9,9-dioctylfluorene-co-bis-N,N-phenyl-1,4-phenylenediamine) (PFB), and 4,4',4”-tris(carbazole-9-yl)triphenylamine (TCATA). 4,4'-Di(9-carbazole)biphenyl (CBP), N,N'-diphenyl-N,N'-di(3-methylphenyl)-1,1'-biphenyl-4,4'-diamine (TPD), N,N'-diphenyl-N,N'-(1-naphthyl)-1,1'-biphenyl-4,4'-diamine (NPB), doped graphene, undoped graphene, C60, doped or undoped NiO, doped or undoped MoO3, doped or undoped WO3, doped or undoped Cu At least one of O; the thickness of the hole transport layer 6 can be from 10 nm to 100 nm, such as 10 nm, 20 nm, 30 nm, 40 nm, 50 nm, 60 nm, 100 nm, etc. The material of the hole injection layer 5 is selected from 2,3,6,7,10,11-hexacyano-1,4,5,8,9,12-hexaazabenzophenanthrene, PEDOT, PEDOT:PSS, PEDOT:PSS derivatives doped with s-MoO3, 4,4',4'- At least one of tris(N-3-methylphenyl-N-phenylamino)triphenylamine, tetracyanoquinone dimethyl ether, copper phthalocyanine, nickel oxide (NiO), molybdenum oxide (MoO3), tungsten oxide (WO3), vanadium oxide (V2O5), molybdenum sulfide (MoS3), tungsten sulfide (WS3), and copper oxide (CuO); the thickness of the hole injection layer 5 can be from 10 nm to 100 nm, such as 10 nm, 20 nm, 30 nm, 40 nm, 50 nm, 60 nm, 100 nm, etc.

[0030] It is understood that, in addition to the functional layers mentioned above, the optoelectronic device 10 may also have some conventional functional layers that help improve the performance of the optoelectronic device 10, such as electron blocking layer, hole blocking layer and / or interface modification layer.

[0031] It is understood that the materials and thicknesses of each layer of the optoelectronic device 10 can be set and adjusted according to the light emission requirements of the optoelectronic device 10.

[0032] It is understood that the optoelectronic device 10 can be a normally positioned chip or an inverted chip. When the optoelectronic device 10 is a normally positioned chip, the film layers in the optoelectronic device 10 are stacked in the following order: anode 1, light-emitting layer 4, and cathode 2, stacked from bottom to top. When the optoelectronic device 10 is an inverted chip, the film layers in the optoelectronic device 10 are stacked in the following order: cathode 2, light-emitting layer 4, and anode 1, stacked from bottom to top.

[0033] The optoelectronic device 10 can be a commercially available finished product or can be fabricated in-house. The fabrication of the optoelectronic device 10 includes: sequentially fabricating multiple film layers according to the film layer stacking order of the optoelectronic device 10 to obtain the optoelectronic device 10. Specifically, the multiple film layers include, but are not limited to, an anode 1, a light-emitting layer 4, and a cathode 2. The film layer stacking order refers to the order in which the multiple film layers are stacked. The film layer structure and stacking order of the optoelectronic device 10 can be referred to the above description and will not be repeated here.

[0034] It is understood that the various film layers in the optoelectronic device 10 provided in this application, including the anode 1, cathode 2, light-emitting layer 4, conductive layer, and other film layers, can be prepared using conventional techniques in the art, such as chemical or physical methods. Chemical methods include chemical vapor deposition, continuous ion layer adsorption and reaction, anodic oxidation, electrolytic deposition, and co-precipitation. Physical methods include physical deposition and solution methods. Physical deposition methods include thermal evaporation deposition, electron beam evaporation deposition, magnetron sputtering, multi-arc ion deposition, physical vapor deposition, atomic layer deposition, pulsed laser deposition, etc.; solution methods can include spin coating, printing, inkjet printing, blade coating, dip coating, immersion coating, spraying, roller coating, casting, slot coating, and strip coating, etc.

[0035] Please see Figure 1 and Figure 3 The control method proposed in this application includes the following steps:

[0036] S10, providing an optoelectronic device 10, the optoelectronic device 10 including a light-emitting layer 4;

[0037] S20, a driving voltage is applied to the optoelectronic device 10, the driving voltage including alternately applied positive voltage and negative voltage.

[0038] It can be understood that alternating the application of positive and negative voltages refers to a voltage cycle T consisting of one positive and one negative voltage cycle. The specific implementation of this voltage cycle T can be either applying a positive voltage first and then switching to a negative voltage, or applying a negative voltage first and then switching to a positive voltage. The driving method proposed in this application embodiment involves cyclically applying the aforementioned voltage cycle T to the optoelectronic device 10. Figure 3 As shown, positive voltage, negative voltage, positive voltage, negative voltage... are sequentially applied to the optoelectronic device 10, and so on in a cycle.

[0039] In the technical solution proposed in this application, positive and negative voltages are alternately applied to the optoelectronic device 10. While driving the device to emit light, the accumulated voltage is released by intermittent negative voltages, clearing the charge accumulation during device operation, thereby extending the device life.

[0040] The forward voltage can be a voltage signal or a current signal of any waveform. During the application of the driving voltage, the forward voltage can change or remain constant. Similarly, within the same voltage cycle, the forward voltage can be a constant voltage or a non-constant voltage with waveforms such as triangular waves, ramp waves, and sine waves. The specific control can be made according to the actual driving requirements.

[0041] In some embodiments, the forward voltage is a constant voltage. The value of the forward voltage can be from 0 to 20V, for example, 0V, 1V, 2V, 3V, 4V, 5V, 6V, 7V, 8V, 9V, 10V, 12V, 15V, 18V, 20V, and any two of the above values. Controlling the value of the forward voltage within this range ensures that the optoelectronic device 10 operates normally and stably. In other embodiments, the forward voltage is greater than 0 and less than or equal to 10V, which helps to reduce energy consumption while ensuring the normal and stable operation of the optoelectronic device 10.

[0042] In some embodiments, the negative voltage is a constant voltage within one voltage cycle.

[0043] In some embodiments, the percentage of the duration of applying a positive voltage in a voltage cycle to the total duration of the voltage cycle T is 75% to 90%, for example, it can be 75%, 76%, 78%, 79%, 80%, 81%, 82%, 83%, 84%, 85%, 86%, 87%, 88%, 89%, 90%, or any two of the above values. By controlling the percentage of the positive voltage within the above range, a suitable refresh rate can be adjusted, which can effectively eliminate the charge that continuously accumulates during the operation of the device while ensuring that the optoelectronic device 10 emits light stably.

[0044] In some embodiments, the material of the light-emitting layer 4 includes the core-shell quantum dot, the outermost shell of the core-shell quantum dot is selected from ZnS, and when the emission peak wavelength of the core-shell quantum dot is 440-540 nm, the negative voltage is -1 to -10 V; for example, it can be -1 V, -1.2 V, -1.3 V, -1.5 V, -1.6 V, -1.8 V, -1.9 V, -2 V, -2.2 V, -2.5 V, -2.8 V, -3 V, -3.2 V, -3.5 V, -3.8 V, -4 V, -4.5 V, -5 V, -5.5 V, -6 V, -6.5 V, -7 V, 8 V, -9 V, -10 V, and any two of the above values. Controlling the negative voltage within this range can effectively eliminate the accumulated charge in the corresponding optoelectronic device 10.

[0045] Furthermore, in some embodiments, when the material of the light-emitting layer 4 includes a first core-shell quantum dot, the negative voltage is -1 to -7V, for example, it can be -1V, -2V, -3V, -4V, -5V, -6V, -7V, or any two of the above values. When the material of the light-emitting layer 4 includes a first core-shell quantum dot, controlling the negative voltage within the above range can better eliminate the accumulated charge in the optoelectronic device 10.

[0046] In other embodiments, when the material of the light-emitting layer 4 includes a second core-shell quantum dot, the negative voltage is -3 to -10V; for example, it can be -3V, -3.2V, -3.5V, -3.8V, -4V, -4.5V, -5V, -5.5V, -6V, -6.5V, -7V, -8V, -9V, -10V, or any value between any two of the above. When the material of the light-emitting layer 4 includes a second core-shell quantum dot, controlling the negative voltage within the above range can better eliminate the accumulated charge in the optoelectronic device 10.

[0047] Furthermore, please refer to Figure 4 In some embodiments, among a plurality of consecutive voltage cycles, at least a first voltage cycle and a second voltage cycle exist, and the first voltage cycle is earlier than the second voltage cycle in time; wherein the absolute value of the negative voltage in the second voltage cycle is greater than the absolute value of the negative voltage in the first voltage cycle. Specifically, as the operating time of the optoelectronic device 10 increases, its aging degree gradually increases. By setting a negative voltage with a higher absolute value in the second voltage cycle where the aging degree is relatively high, it is possible to better adapt to the current charge accumulation situation of the optoelectronic device 10, clear the charge accumulation, and better extend the device life.

[0048] Specifically, the duration for which the driving voltage is applied to the optoelectronic device 10 is set to T. In some embodiments, when the material of the light-emitting layer 4 is the first core-shell quantum dot, a plurality of consecutive voltage cycles satisfy the following: when 0h ≤ T < 50h, the negative voltage is -1 to -5V; when 50h ≤ T ≤ 300h, the negative voltage is -3 to -7V; when 300 < T ≤ 1000h, the negative voltage is -5 to -7V. In other embodiments, when the material of the light-emitting layer 4 is the second core-shell quantum dot, a plurality of consecutive voltage cycles satisfy the following: when 0h ≤ T ≤ 50h, the negative voltage is -3 to -5V; when 50h < T ≤ 500h, the negative voltage is -5 to -7V; when 500 < T ≤ 1000h, the negative voltage is -7 to -10V. Thus, by applying a corresponding negative voltage to the optoelectronic device 10 for different operating durations, the charge can be cleared more effectively.

[0049] The first core-shell quantum dot has the following characteristics: its emission peak wavelength is greater than or equal to 440 nm and less than 490 nm, and the outermost shell of the first core-shell quantum dot is made of ZnS. In a specific embodiment, the first core-shell quantum dot includes ZnS. x Cd 1-x S / ZnS, 1>x>0, quantum dot Zn x Cd 1-x The emission peak wavelength of S / ZnS is in the range of 440–490 nm. The second core-shell quantum dot has the following characteristics: the emission peak wavelength of the second core-shell quantum dot is greater than or equal to 490 nm and less than 540 nm, and the material of the outermost shell of the second core-shell quantum dot is selected from ZnS. In a specific embodiment, the second core-shell quantum dot includes CdSe / ZnS, and the emission peak wavelength of the CdSe / ZnS quantum dot is in the range of 490–540 nm.

[0050] In some embodiments, the applied frequency of the driving voltage is controlled within a range greater than 0 Hz and less than 5000 Hz. For example, it can be 0.1 Hz, 1 Hz, 2 Hz, 5 Hz, 10 Hz, 20 Hz, 30 Hz, 50 Hz, 80 Hz, 100 Hz, 200 Hz, 300 Hz, 400 Hz, 450 Hz, 470 Hz, 480 Hz, 490 Hz, 500 Hz, 510 Hz, 520 Hz, 550 Hz, 600 Hz, 700 Hz, 800 Hz, 900 Hz, 1000 Hz, 1200 Hz, 1500 Hz, 2000 Hz, 3000 Hz, 4000 Hz, 5000 Hz, or any two of the above values. This helps improve the light emission quality and ensures stable light emission of the device. In other embodiments, the applied frequency of the driving voltage is controlled within 200 to 1000 Hz. Within this range, it helps extend the lifespan of the optoelectronic device 10. To further improve lifespan, in some embodiments, the frequency of the applied driving voltage is controlled between 450 and 550 Hz. It is understood that the driving voltage referred to herein refers to the number of voltage cycles applied within one second (s).

[0051] There are various ways to implement step S20. In some embodiments, step S20 can be implemented by PWM modulation. Specifically, step S20 may include: providing a power supply electrically connected to the optoelectronic device 10; acquiring a PWM signal for the power supply; modulating the output voltage of the power supply within the pulse width period corresponding to the PWM signal; controlling the power supply to output the positive voltage to the optoelectronic device 10 when the PWM signal is a high-level signal; and controlling the power supply to output the negative voltage to the optoelectronic device 10 when the PWM signal is a low-level signal.

[0052] It is understood that the PWM signal may also include the following information, such as duty cycle and frequency. The duty cycle is the percentage of the duration of the positive voltage application to the total duration of the voltage period T, as mentioned above. The duty cycle can be 75% to 90%. The frequency is the frequency of the driving voltage application, as mentioned above. The frequency of the PWM signal can be set to be greater than 0Hz and less than 5000Hz.

[0053] Furthermore, the power supply can be a commercially available IT6800A / B dual-range programmable DC power supply, or the IT6800A / B dual-range programmable DC power supply can be used in conjunction with a power management chip to enable more stable and accurate output of high and low levels.

[0054] In other embodiments, step S20 may also be implemented in the following manner: Please refer to Figure 5A driving module is provided, comprising a control unit, a positive voltage unit, and a negative voltage unit. The control unit is electrically connected to both the positive and negative voltage units and is used to output a control signal to control the output voltage of one of the positive and negative voltage units. The positive voltage unit is electrically connected to the photoelectric device 10 and the control unit and is used to output a positive voltage to the photoelectric device 10 according to the received control signal. The negative voltage unit is electrically connected to the photoelectric device 10 and the control unit and is used to output a negative voltage to the photoelectric device 10 according to the received control signal. The control signal is acquired, and the positive and negative voltage units are controlled to alternately apply voltage to the photoelectric device 10 according to the control signal.

[0055] Secondly, this application also includes a photoelectric device comprising a photoelectric element 10 and a driving module. The photoelectric element 10 includes a light-emitting layer 4 and is used to emit light. The driving module is electrically connected to the photoelectric element 10 and is used to provide alternating positive and negative voltages to the photoelectric element 10. This photoelectric device is less prone to charge accumulation and has a longer service life.

[0056] In some embodiments, the optoelectronic device 10 can be a light-emitting diode, the structure of which is as described above and will not be repeated here.

[0057] In some embodiments, the drive module can be a power supply with PWM modulation function, such as an IT6800A / B dual-range programmable DC power supply. The power supply can alternately output positive and negative voltages according to a set PWM signal.

[0058] In some embodiments, the drive module may include a control unit, a positive voltage unit, and a negative voltage unit; see also Figure 5 The control unit is electrically connected to the positive voltage unit and the negative voltage unit, and is used to output control signals to control the positive voltage unit and the negative voltage unit to alternately output voltage. The positive voltage unit is electrically connected to the photoelectric device 10 and the control unit, and is used to output a positive voltage to the photoelectric device 10 according to the received control signal. The negative voltage unit is electrically connected to the photoelectric device 10 and the control unit, and is used to output a negative voltage to the photoelectric device 10 according to the received control signal. Specifically, as shown... Figure 6As shown, the control unit can be implemented through a central control board (TCON board). The positive voltage unit can include a first transistor and a positive voltage circuit. The first transistor has a first terminal, a second terminal, and a third terminal. Its first terminal is connected to the TCON board, its second terminal is connected to the output terminal of the positive voltage circuit, and its third terminal is connected to the optoelectronic device 10. It is understood that the positive voltage circuit can adopt a conventional voltage output circuit. The negative voltage unit can include a second transistor and a negative voltage circuit. The second transistor has a first terminal, a second terminal, and a third terminal. Its first terminal is connected to the TCON board, its second terminal is connected to the output terminal of the negative voltage circuit, and its third terminal is connected to the optoelectronic device 10. It is understood that the negative voltage circuit can adopt a conventional voltage output circuit, or it can be implemented by combining a conventional voltage output circuit with an inverter, etc. The specific structure and connection method of the TCON board, the positive voltage circuit, and the negative voltage circuit can refer to the commonly used circuit structures in this field, and will not be described in detail here.

[0059] The material of the light-emitting layer 4 can refer to any quantum dot described above, and will not be repeated here.

[0060] The specific control methods for the positive voltage and the negative voltage, as well as the specific control method for the optoelectronic device 10, can refer to the control methods described above, and will not be repeated here.

[0061] Thirdly, this application also relates to a display device, which includes the optoelectronic device described above. The display device can be any electronic product with display functionality, including but not limited to smartphones, tablets, laptops, digital cameras, digital camcorders, smart wearable devices, smart weighing scales, in-vehicle displays, televisions, or e-book readers. Smart wearable devices can be, for example, smart bracelets, smartwatches, virtual reality (VR) headsets, etc.

[0062] The present application will be specifically described below through specific embodiments. These embodiments are only some embodiments of the present application and are not intended to limit the present application. Unless otherwise specified, the raw materials used in the following embodiments are all commercially available products.

[0063] Example 1

[0064] Step 1: Provide a QLED device with the following structure: ITO (100nm) / PEDOT:PSS (20nm) / TFB (30nm) / QD (30nm) / ZnO (20nm) / Ag (10nm), wherein the material of the light-emitting layer QD is CdSe / ZnS and the emission peak wavelength is 495nm.

[0065] Step 2: Connect the commercially available IT6863A dual-range programmable DC power supply to the QLED device as the driver power supply. Set the duty cycle to 90%, the positive voltage to 3.5V, the current to 4mA, and the negative voltage to -3V. Set the drive frequency according to Table 1 below, and then test the device's lifespan using the following method.

[0066] The test method for lifespan T95 is as follows:

[0067] The time required for the brightness of the device to decrease to a certain percentage of the maximum brightness under the driving mode given in step 2 is defined as the time it takes for the brightness to decrease to 95% of the maximum brightness. This lifetime is the measured lifetime.

[0068] Table 1

[0069] Frequency (Hz) T95(h) 10 0.251 200 0.605 500 1.347 1000 0.949 4900 0.033 5000 Unable to light up

[0070] As can be seen from the table above, when the driving frequency is below 5000Hz, the optoelectronic device can light up and emit light. When the driving frequency is in the range of 200 to 1000Hz, the device has a better lifespan. Among them, when the driving frequency is 500Hz, the device has the longest lifespan.

[0071] Example 2

[0072] This embodiment is basically the same as Embodiment 1, except that step 2 in this embodiment is changed to:

[0073] A commercially available IT6863A dual-range programmable DC power supply was used as the driver power supply and electrically connected to the QLED device to power it. The forward voltage was set to 3.5V, the driving frequency to 500Hz, and the current to 4mA. The duty cycle was set according to Table 2 below. Then, while keeping the duty cycle constant, different negative voltages were selected (as shown in Table 2). Finally, the device's lifetime was tested based on this driving method, and the transition time was calculated. The transition time refers to the time after removing the low-level interval. Transition time = T95 * duty cycle.

[0074] Meanwhile, a comparative example is set up, which is basically the same as Example 1, except that in step 2 of the comparative example, the duty cycle is set to 100%, that is, the power supply always provides a constant positive voltage of 3.5V to the QLED device.

[0075] It should be noted that a corresponding effective DC test control is set up under each test group with the same duty cycle but different negative voltages. The effective DC test control refers to DC power supply using the DC drive conditions corresponding to the current duty cycle drive conditions, with the same positive voltage duration as a benchmark. Setting up this control and comparing it with the test group using the method of this application can better observe the advantages and disadvantages of the test group drive methods. When the conversion time corresponding to a certain negative voltage is longer than the conversion time of its corresponding effective DC test control, it indicates that the negative voltage condition has a more significant effect on improving device performance. Taking the test group with a 10% duty cycle as an example, in order to better compare the effect of its control method, a DC power supply with a drive current of 4 × 10% = 0.4mA is used, which can better eliminate the influence of other factors on the conversion time and improve the accuracy of the test results.

[0076] Table 2

[0077]

[0078]

[0079]

[0080] As can be seen from the table above, for CdSe / ZnS QLED devices:

[0081] Compared to the switching time of the device under the driving method with a 100% duty cycle (i.e., DC drive) in the comparative example, the switching time of each device is longer when the driving method of alternately applying positive and negative voltages is adopted. This shows that compared to DC drive, the control method proposed in this application helps to extend the service life of the device.

[0082] Furthermore, it can be seen that when the duty cycle is in the range of 75% to 90%, the switching time of the device under the driving mode of alternating positive and negative voltages is significantly improved, indicating that controlling the duty cycle to be 75% to 90% helps to extend the lifespan of CdSe / ZnS QLED devices.

[0083] Example 3

[0084] This embodiment is basically the same as Embodiment 1, with the only difference being:

[0085] In step 1, quantum dot QD is replaced with Zn. 0.9 Cd 0.1 S / ZnS has an emission peak wavelength of 470nm.

[0086] Step 2 is modified as follows: Use a commercially available IT6863A dual-range programmable DC power supply as the driver power supply, electrically connect it to the QLED device, and power it. Set the forward voltage to 3.5V, the driving frequency to 500Hz, and the current to 4mA, and set the duty cycle according to Table 3 below. Then, while keeping the duty cycle constant, gradually increase the absolute value of the negative voltage. Test the device's lifespan and calculate the switching time using the above method.

[0087] Table 3

[0088]

[0089]

[0090]

[0091] As can be seen from the table above, for Zn 0.9 Cd 0.1 QLED devices using S / ZnS:

[0092] With a duty cycle of 75%, the device's switching time is significantly longer when the negative voltage is in the range of -1V to -5V than when driven by a corresponding DC 2mA. Similarly, with a duty cycle of 90%, the device's switching time is significantly longer when the negative voltage is in the range of -1V to -5V than when driven by a corresponding DC 3.6mA. Clearly, when the duty cycle is between 75% and 90% and the negative voltage is between -1V and -5V, the switching time of the device is significantly improved by alternating positive and negative voltages. This indicates that controlling the duty cycle to be 75%–90% and the negative voltage to be -1V–-5V helps extend the switching time of Zn. 0.9 Cd 0.1 Lifetime of S / ZnS QLED devices.

[0093] Example 4

[0094] This embodiment is basically the same as Embodiment 1, except that step 2 in this embodiment is changed to:

[0095] The device prepared in Example 1 was first powered by a DC power supply of 0.03mA (at which the fresh device can achieve a brightness of about 1knit), and then lit for 0h, 50h, 300h, 400h, 500h, and 1000h respectively. Then, it was powered by PWM under the following conditions and its lifespan and switching time were tested:

[0096] A commercially available IT6863A dual-range programmable DC power supply was used as the driver power supply and electrically connected to the QLED device to power it. The forward voltage was set to 4V, the driving frequency to 500Hz, the current to 4mA, and the duty cycle to 90%. Then, different negative voltages were selected according to the table below, and the device lifetime was tested based on this driving method, and the switching time was calculated.

[0097] Table 4

[0098]

[0099]

[0100]

[0101] As shown in the table above, when the lighting time is 0h, 50h, 300h, 400h, 500h, and 1000h, the optimal negative voltage corresponding to the optimal switching time is -5V, -5V, -5V, -7V, -7V, and -9V, respectively. This indicates that as the lighting time increases, the absolute value of the negative voltage corresponding to the optimal switching time gradually increases. Specifically, when the lighting time is 0 and 50h, a negative voltage set in the range of -3 to -5V provides a better switching time; when the lighting time is 300h, 400h, and 500h, a negative voltage set in the range of -5 to -7V provides a better switching time; and when the lighting time is 1000h, a negative voltage set in the range of -7 to -10V provides a better switching time.

[0102] Example 5

[0103] This embodiment is basically the same as embodiment 4, except that step 2 in this embodiment is changed to:

[0104] In step 1, the device prepared in Example 3 is used instead, and its quantum dot QD is Zn. 0.9 Cd 0.1 S / ZnS has an emission peak wavelength of 470nm.

[0105] In step 2, refer to the table below for setting the negative voltage and lighting time.

[0106] Table 5

[0107]

[0108]

[0109]

[0110] As can be seen from the table above, with the increase of lighting time, the absolute value of the negative voltage corresponding to the optimal switching time gradually increases. Specifically, when the lighting time is 0h, the optimal switching time is achieved when the negative voltage is set in the range of -1 to -5V; when the lighting time is 50h and 300h, the optimal switching time is achieved when the negative voltage is set in the range of -3 to -7V; and when the lighting time is 400h, 500h, and 1000h, the optimal switching time is achieved when the negative voltage is set in the range of -5 to -7V.

[0111] Example 6

[0112] The experimental and control groups were set up as follows, and the current efficiency CE (unit (cd / A)) of each experimental and control group was tested. The test method of CE was as follows: using the Fostar FPD optical property measurement equipment, the efficiency test system was built by controlling the QE PRO spectrometer, Keithley 2400, and Keithley 6485 through LabVIEW, and the parameters such as voltage, current, brightness, and emission spectrum were measured, and the current efficiency was calculated.

[0113] Experimental Group 1: The device (CdSe / ZnS) and PWM power supply method of Example 1 were used, and the positive voltage was set to 3.5V, the negative voltage to -5V, the driving frequency to 500Hz, the current to 4mA, the duty cycle to 90%, and the device was lit for 1000h.

[0114] Experimental Group 2: Basically the same as Experimental Group 1, except that during the 1000h lighting period, the negative voltage was -5V from 0 to 50h, then -7V from 500h to 1000h.

[0115] Experimental Group 3: Basically the same as Experimental Group 1, except that during the 1000h lighting period, the negative voltage was -5V from 0 to 50h, then -7V from 500h, and then -9V from 1000h.

[0116] Control group 1: DC power supply was used, and the voltage was set to 3.5V, the driving frequency to 500Hz, the current to 3.6mA, and the circuit was lit for 1000 hours.

[0117] Table 6-1

[0118] CE(cd / A) Control group 1 5.25 Experimental group 1 10.51 Experimental group 2 12.16 Experimental group 3 13.82

[0119] Experimental Group 4: Using the device from Example 1 (Zn) 0.9 Cd 0.1The circuit uses S / ZnS) and PWM power supply modes, with a positive voltage of 3.5V, a negative voltage of -3V, a drive frequency of 500Hz, a current of 4mA, a duty cycle of 90%, and a lighting time of 1000 hours.

[0120] Experimental Group 5: Basically the same as Experimental Group 1, except that during the 1000h lighting period, the negative voltage was -3V from 0 to 50h, then -7V from 300h to 1000h.

[0121] Experimental Group 6: Basically the same as Experimental Group 1, except that during the 1000h lighting period, the negative voltage was -3V from 0 to 50h, then -5V from 300h, and then -7V from 1000h.

[0122] Control group 2: DC power supply was used, with the voltage set to 3.5V, the driving frequency to 500Hz, the current to 3.6mA, and the circuit was lit for 1000 hours.

[0123] Table 6-2

[0124] CE(cd / A) Control group 2 4.35 Experimental group 4 8.17 Experimental group 5 11.03 Experimental group 6 12.14

[0125] As shown in Tables 6-1 and 6-2, experimental groups 1-3 have a much higher current efficiency than control group 1, and experimental groups 4-6 have a much higher current efficiency than control group 2. This indicates that the PWM power supply method used in this application and the low level set as a negative voltage help to clear charge accumulation and improve the light emission effect of the device.

[0126] Furthermore, in the experimental groups, compared to experimental group 1, experimental groups 2 and 3 had higher current efficiency, and compared to experimental group 4, experimental groups 5 and 6 had higher current efficiency. This indicates that as the aging degree of the device increases, gradually matching a negative voltage with a higher absolute value is more conducive to clearing charge accumulation.

[0127] The technical solutions provided by the embodiments of this application have been described in detail above. Specific examples have been used to illustrate the principles and implementation methods of this application. The description of the above embodiments is only for the purpose of helping to understand the method and core ideas of this application. At the same time, for those skilled in the art, there will be changes in the specific implementation methods and application scope based on the ideas of this application. Therefore, the content of this specification should not be construed as a limitation of this application.

Claims

1. A control method for an optoelectronic device, characterized in that, Includes the following steps: A photoelectric device is provided, the photoelectric device including a light-emitting layer; A driving voltage is applied to the optoelectronic device, the driving voltage comprising alternately applied positive and negative voltages.

2. The control method according to claim 1, characterized in that, A voltage cycle is defined as consisting of a positive voltage and a negative voltage. In a series of consecutive voltage cycles, there is at least a first voltage cycle and a second voltage cycle, and the first voltage cycle is earlier than the second voltage cycle in time. Wherein, the absolute value of the negative voltage in the second voltage cycle is greater than the absolute value of the negative voltage in the first voltage cycle; and / or, During one voltage cycle, the negative voltage remains constant.

3. The control method according to claim 1 or 2, characterized in that, A voltage cycle is defined as consisting of one positive voltage and one negative voltage. Within one voltage cycle, the duration of applying the positive voltage accounts for 75% to 90% of the total duration of the voltage cycle.

4. The control method according to claim 2, characterized in that, The material of the light-emitting layer includes quantum dots, the average particle size of which is 2–20 nm; and / or, The material of the light-emitting layer includes quantum dots, which include at least one of single-structure quantum dots, core-shell quantum dots, and perovskite semiconductor materials; the material of the single-structure quantum dots, the core material of the core-shell quantum dots, and the shell material of the core-shell quantum dots are respectively selected from at least one of group II-VI compounds, group IV-VI compounds, group III-V compounds, and group I-III-VI compounds, and the shell of the core-shell quantum dots includes one or more layers; wherein, the group II-VI compounds are selected from CdS, CdSe, CdTe, ZnS, ZnSe, ZnTe, ZnO, HgS, HgSe, HgTe, CdSeS, and CdSeT. e, CdSTe, ZnSeS, ZnSeTe, ZnSTe, HgSeS, HgSeTe, HgSTe, CdZnS, CdZnSe, CdZnTe, CdHgS, CdHgSe, CdHgTe, HgZnS, HgZnSe, HgZnTe, CdZnSeS, CdZnSeTe, CdZnSTe, CdHgSeS, CdHgSeTe, CdHgSTe, HgZnSeS, HgZnSeTe, and HgZnSTe; the IV-VI compound is selected from SnS, SnSe, SnTe, PbS, PbSe, PbTe, SnSeS, SnS At least one of eTe, SnSTe, PbSeS, PbSeTe, PbSTe, SnPbS, SnPbSe, SnPbTe, SnPbSSe, SnPbSeTe, and SnPbSTe; the III-V compound is selected from GaN, GaP, GaAs, GaSb, AlN, AlP, AlAs, AlSb, InN, InP, InAs, InSb, GaNP, GaNAs, GaNSb, GaPAs, GaPSb, AlNP, AlNAs, AlNSb, AlPAs, AlPSb, InNP, InNAs, InNSb, InPAs, InPSb, and GaA At least one of the following: lNP, GaAlNAs, GaAlNSb, GaAlPAs, GaAlPSb, GaInNP, GaInNAs, GaInNSb, GaInPAs, GaInPSb, InAlNP, InAlNAs, InAlNSb, InAlPAs, and InAlPSb; the I-III-VI group compounds are selected from at least one of CuInS2, CuInSe2, and AgInS2; the perovskite semiconductor material is selected from doped or undoped inorganic perovskite semiconductors, or organic-inorganic hybrid perovskite semiconductors; the general structural formula of the inorganic perovskite semiconductor is AMX3, where A is Cs. + Ion, M is a divalent metal cation selected from Pb 2+ Sn 2+ Cu 2+ Ni 2+ Cd 2+ Cr 2+ Mn 2+ Co 2+ Fe 2+ 、Ge 2+ Yb 2+ Eu 2+ At least one of them, where X is a halide anion selected from Cl. - ,Br - I - At least one of the following; the general structural formula of the organic-inorganic hybrid perovskite semiconductor is BMX3, wherein B is an organic amine cation selected from CH3(CH2). n-2 NH 3+ Or [NH3(CH2)] n NH3] 2+ Where n≥2, M is a divalent metal cation selected from Pb 2+ Sn 2+ Cu 2+ Ni 2+ Cd 2+ Cr 2+ Mn 2+ Co 2+ Fe 2+ 、Ge 2+ Yb 2+ Eu 2+ At least one of them, where X is a halide anion selected from Cl. - ,Br - I - At least one of them; and / or, The optoelectronic device further includes an anode and a cathode disposed opposite to each other, with the light-emitting layer located between the anode and the cathode. The anode and the cathode are each independently selected from any one of a metal electrode, a carbon electrode, a doped or undoped metal oxide electrode, and a composite electrode. Specifically, the material of the metal electrode is selected from at least one of Al, Ag, Cu, Mo, Au, Ba, Ca, Ni, Ir, and Mg; the material of the carbon electrode is selected from at least one of graphite, carbon nanotubes, graphene, and carbon fibers; and the material of the doped or undoped metal oxide electrode is selected from ITO, FTO, ATO, and A... The composite electrode material is selected from at least one of ZO, GZO, IZO, MZO, ITZO, ICO, AMO, SnO2, In2O3, Cd:ZnO, F:SnO2, In:SnO2, and Ga:SnO2; the composite electrode material is selected from at least one of AZO / Ag / AZO, AZO / Al / AZO, ITO / Ag / ITO, ITO / Al / ITO, ZnO / Ag / ZnO, ZnO / Al / ZnO, TiO2 / Ag / TiO2, TiO2 / Al / TiO2, ZnS / Ag / ZnS, and ZnS / Al / ZnS.

5. The control method according to claim 4, characterized in that, The material of the luminescent layer includes the core-shell structured quantum dots, wherein the outermost shell of the core-shell structured quantum dots is selected from ZnS; and / or, When the emission peak wavelength of the core-shell quantum dot is 440–540 nm, the negative voltage is -1 to -10 V; and / or, The optoelectronic device further includes an electronic functional layer disposed between the cathode and the light-emitting layer. The electronic functional layer includes one or both of an electron transport layer and an electron injection layer. When the electronic functional layer includes an electron transport layer and an electron injection layer, the electron injection layer is located between the electron transport layer and the cathode. The material of the electron transport layer includes at least one of a metal oxide, a doped metal oxide, a group II-VI semiconductor material, a group III-V semiconductor material, and a group I-III-VI semiconductor material. The metal oxide is selected from at least one of ZnO, BaO, TiO2, and SnO2. One type; the metal oxide in the doped metal oxide is selected from at least one of ZnO, TiO2, and SnO2, and the doping element is selected from at least one of Al, Mg, Li, In, and Ga; the group II-VI semiconductor material is selected from at least one of ZnS, ZnSe, and CdS; the group III-V semiconductor material is selected from at least one of InP and GaP; the group I-III-VI semiconductor material is selected from at least one of CuInS and CuGaS; the material of the electron injection layer includes at least one of cesium carbonate, cesium fluoride, cesium azide, and lithium fluoride; and / or, The optoelectronic device further includes a hole functional layer disposed between the anode and the light-emitting layer. The hole functional layer comprises one or both of a hole transport layer and a hole injection layer. When the hole functional layer comprises a hole transport layer and a hole injection layer, the hole injection layer is located between the hole transport layer and the anode. The material of the hole transport layer is selected from poly(9,9-dioctylfluorene-CO-N-(4-butylphenyl)diphenylamine), polyvinylcarbazole, poly(N,N'-bis(4-butylphenyl)-N,N'-bis(phenyl)benzidine), poly(9,9-dioctylfluorene-co-bis-N,N-phenyl-1,4-phenylenediamine), 4,4',4”-tris(carbazole-9-yl)triphenylamine, 4,4'-bis(9-carbazole)biphenyl, N,N'-diphenyl-N,N'-bis(3-methylphenyl)-1,1'- The material of the hole injection layer is selected from at least one of the following: biphenyl-4,4'-diamine, N,N'-diphenyl-N,N'-(1-naphthyl)-1,1'-biphenyl-4,4'-diamine, doped graphene, undoped graphene, C60, doped or undoped NiO, doped or undoped MoO3, doped or undoped WO3, and doped or undoped CuO; the material of the hole injection layer is selected from at least one of 2,3,6,7,10,11-hexacyano-1,4,5,8,9,12-hexaazabenzophenanthrene, PEDOT, PEDOT:PSS, PEDOT:PSS derivatives doped with s-MoO3, 4,4',4'-tris(N-3-methylphenyl-N-phenylamino)triphenylamine, tetracyanoquinone dimethylane, copper phthalocyanine, nickel oxide, molybdenum oxide, tungsten oxide, vanadium oxide, molybdenum sulfide, tungsten sulfide, and copper oxide.

6. The control method according to claim 5, characterized in that, The material of the light-emitting layer includes a first core-shell quantum dot, the emission peak wavelength of which is greater than or equal to 440 nm and less than 490 nm, and when the material of the outermost shell of the first core-shell quantum dot is selected from ZnS, the negative voltage is -1 to -7V; or... The material of the light-emitting layer includes a second core-shell quantum dot. The emission peak wavelength of the second core-shell quantum dot is greater than or equal to 490 nm and less than 540 nm. When the material of the outermost shell of the second core-shell quantum dot is selected from ZnS, the negative voltage is -3 to -10 V.

7. The control method according to claim 6, characterized in that, The duration for which the driving voltage is applied to the optoelectronic device is T; When the material of the light-emitting layer is the first core-shell quantum dot, a series of consecutive voltage cycles satisfy the following: when 0h ≤ T < 50h, the negative voltage is -1 to -5V; and / or, when 50h ≤ T ≤ 300h, the negative voltage is -3 to -7V; and / or, when 300 < T ≤ 1000h, the negative voltage is -5 to -7V; or... When the material of the light-emitting layer is the second core-shell quantum dot, a series of consecutive voltage cycles satisfy the following: when 0h≤T≤50h, the negative voltage is -3 to -5V; and / or, when 50h<T≤500h, the negative voltage is -5 to -7V; and / or, when 500<T≤1000h, the negative voltage is -7 to -10V.

8. The control method according to claim 6, characterized in that, The first core-shell quantum dot includes Zn x Cd 1-x S / ZnS, 1 > x > 0; and / or, The second core-shell quantum dot comprises CdSe / ZnS.

9. The control method according to claim 1, characterized in that, The applied frequency of the driving voltage is greater than 0 Hz and less than 5000 Hz; optionally, the applied frequency of the driving voltage is 450–550 Hz; and / or, The forward voltage is a constant voltage; and / or, The forward voltage is less than or equal to 20V; Optionally, the forward voltage is greater than 0 and less than or equal to 10V.

10. The control method according to claim 1, characterized in that, The step of applying a driving voltage to the optoelectronic device, wherein the driving voltage includes alternately applied positive and negative voltages, comprises: Provide a power source electrically connected to the optoelectronic device; Obtain the PWM signal for the power supply; Within the pulse width period corresponding to the PWM signal, the output voltage of the power supply is modulated. When the PWM signal is a high-level signal, the power supply is controlled to output the positive voltage to the photoelectric device, and when the PWM signal is a low-level signal, the power supply is controlled to output the negative voltage to the photoelectric device.

11. A photoelectric device, characterized in that, include: Optoelectronic devices, including a light-emitting layer; and, The driving module is electrically connected to the optoelectronic device and is used to provide alternating positive and negative voltages to the optoelectronic device.

12. The photoelectric device according to claim 11, characterized in that, The drive module includes an IT6800A / B dual-range programmable DC power supply; or... The driving module includes a control unit, a positive voltage unit, and a negative voltage unit; the control unit is electrically connected to the positive voltage unit and the negative voltage unit, and is used to output a control signal to control the positive voltage unit and the negative voltage unit to alternately output voltage; the positive voltage unit is electrically connected to the photoelectric device, and is used to output a positive voltage to the photoelectric device according to the received control signal; the negative voltage unit is electrically connected to the photoelectric device, and is used to output a negative voltage to the photoelectric device according to the received control signal; and / or, A voltage cycle is defined as consisting of one positive voltage and one negative voltage. In a plurality of consecutive voltage cycles, at least a first voltage cycle and a second voltage cycle exist, with the first voltage cycle preceding the second voltage cycle in time. Specifically, the absolute value of the negative voltage in the second voltage cycle is greater than the absolute value of the negative voltage in the first voltage cycle; and / or, A voltage cycle is defined as consisting of one positive voltage and one negative voltage; within one voltage cycle, the duration of the applied positive voltage accounts for 75% to 90% of the total duration of the voltage cycle; and / or, The material of the light-emitting layer includes core-shell quantum dots, the outermost shell of which is selected from ZnS, and the negative voltage is -1 to -10V when the emission peak wavelength of the core-shell quantum dots is 440–540 nm; optionally, the duration for which the driving voltage is applied to the optoelectronic device is T; the material of the light-emitting layer includes a first core-shell quantum dot, the emission peak wavelength of which is greater than or equal to 440 nm and less than 490 nm, and the negative voltage is -1 to -7V when the outermost shell of the first core-shell quantum dot is selected from ZnS; or, the material of the light-emitting layer includes a second core-shell quantum dot, the emission peak wavelength of which is greater than or equal to 490 nm and less than 540 nm, and the negative voltage is -3 to -10V when the outermost shell of the second core-shell quantum dot is selected from ZnS; and / or, The frequency of the applied driving voltage is greater than 0 Hz and less than 5000 Hz; optionally, the frequency of the applied driving voltage is 450 to 550 Hz.

13. A display device, characterized in that, Including the optoelectronic device as described in claim 11 or 12.

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