Ultra-wideband polarization selection and energy selection integrated structure

Abstract

The invention belongs to the field of microwave high-power protection, and particularly provides an ultra-wideband polarization selection and energy selection integrated structure. The energy selection structure unit comprises a first energy selection layer, a dielectric layer, a frequency selection layer, a dielectric layer, a polarization conversion layer, a dielectric layer, a frequency selection layer, a dielectric layer, a second energy selection layer and a PIN diode loaded on the first energy selection layer and the second energy selection layer from top to bottom; the first energy selection layer is located on the upper surface of the dielectric layer; the frequency selection layer is located between the dielectric layers; the polarization conversion layer is located between the dielectric layers; the frequency selection layer is located between the dielectric layers; the second energy selection layer is located on the lower surface of the dielectric layer; according to the invention, the cascade design of the energy selection surface, the polarization conversion surface and the frequency selection surface is utilized to form an ultra-wideband polarization selection and energy selection integrated structure.

Description

Technical Field

[0001] This invention belongs to the field of microwave high-power technology, specifically providing an energy selective surface with broadband, polarization conversion characteristics, and good bandpass characteristics. Background Technology

[0002] With the rapid development of electronic information and wireless communication technologies, various electronic devices are widely used in military and civilian fields. These electronic devices, or their components, are highly susceptible to interference from high-power microwaves. These high-power microwaves may originate naturally or be caused by man-made powerful electromagnetic pulse weapons. The specific frequency electromagnetic pulses generated by high-power microwaves primarily enter through communication channels such as antennas of electronic devices, ultimately interfering with their normal operation.

[0003] In order to cope with the damage caused by high-power microwaves, many experts and scholars have proposed energy selective surfaces in recent years. This structure is based on a frequency selective structure and loads nonlinear devices such as diodes. It can adaptively select to reflect or refract electromagnetic waves, and finally achieve electromagnetic protection for electromagnetic equipment.

[0004] Research on energy selective surfaces (ESS) has become increasingly mature, but many problems remain to be solved. A prominent issue is that ESS can only protect against high-power microwaves within its operating frequency band, while out-of-band high-power waves can still penetrate the ESS and damage downstream electronic equipment. To achieve full in-band and out-of-band shielding, or to achieve the widest possible shielding bandwidth, many researchers have proposed cascading ESS with FSS to achieve superior shielding. However, such cascading designs result in excessively high structural profiles, and the development of ESS technology still faces challenges. With more and more electronic devices entering various fields such as production, daily life, and even military aerospace, research on ESS with excellent electromagnetic protection characteristics is of great significance. Summary of the Invention

[0005] The goal of this invention is to solve the problem of high-power microwave interference faced by various electronic devices, such as radar, and to realize an integrated structure of ultra-wideband polarization selection and energy selection.

[0006] To achieve the above-mentioned objectives, the technical solution of this invention is as follows:

[0007] An integrated structure for ultra-wideband polarization selection and energy selection, characterized in that it consists of the following components from top to bottom: a first energy selection layer 1, a dielectric layer 2, a frequency selection layer 3, a dielectric layer 4, a polarization conversion layer 5, a dielectric layer 6, a frequency selection layer 7, a dielectric layer 8, a second energy selection layer 9, and PIN diodes 10 loaded on the first energy selection layer 1 and the second energy selection layer 9; the first energy selection layer 1 is located on the upper surface of the dielectric layer 2; the frequency selection layer 3 is printed between the dielectric layer 2 and the dielectric layer 4; the polarization conversion layer 5 is printed between the dielectric layer 4 and the dielectric layer 6; the frequency selection layer 7 is printed between the dielectric layer 6 and the dielectric layer 8; the second energy selection layer 9 is located on the lower surface of the dielectric layer 8.

[0008] As a preferred solution, the widths of the two ends of the "Ji" - shaped metal patches in the first energy selection layer 1 and the energy selection layer 2 are w1; the width of the metal strip crossbeam is w2; the lengths of the two ends of the metal strip are l1; the lengths on both sides of the crossbeam are l2 and l3 respectively.

[0009] As a preferred solution, the length of the PIN diode 10 is w2 and the width is l4.

[0010] As a preferred solution, the thicknesses of the dielectric layer 2, the dielectric layer 4, the dielectric layer 6, and the dielectric layer 8 are all h, and the size is p*p.

[0011] As a preferred solution, the longitudinal lengths of the zigzag slots loaded on the frequency selection layer 3 and the frequency selection layer 7 are a1, a2, a3; the transverse widths are b1, b2.

[0012] As a preferred solution, the outer radius of the ring in the polarization conversion layer 5 is Ro = 3.6 and the inner radius is Ri = 3.5.

[0013] In terms of the working principle:

[0014] This invention comprises a sandwich-type energy selective surface formed by printing multiple metasurfaces with different functions onto multiple dielectric layers. In this invention, a PIN diode loaded onto the energy selective structure controls the transmission or reflection of linearly polarized waves. When the power of the incident linearly polarized wave is high, the diode is in the conducting state, equivalent to a small resistor with a resistance of 5Ω, and the energy selective structure can be considered as a low-resistance state, reflecting the high-power incident electromagnetic wave back. When the power of the incident linearly polarized wave is relatively low, the diode is in the off state, equivalent to a small capacitor with a capacitive reactance of 0.15pF, and the energy selective structure can be considered as a high-resistance state, allowing the low-power linearly polarized electromagnetic wave to transmit into the structure at the rear end. This achieves adaptive selective transmission of incident waves of different powers. The two frequency selective structures are coupled to achieve the bandpass characteristic of the energy selective structure. The intermediate polarization conversion structure converts the linearly polarized wave transmitted from the energy selective structure into a linearly polarized wave orthogonal to it. Compared with previous designs of the same type, this invention can achieve protection against fully polarized high-power microwaves. When a high-power wave is incident with y-polarization, the incident wave cannot pass through the uppermost first energy selection layer 1 due to its excessive power. When a high-power wave is incident with x-polarization, it will be converted into a y-polarized wave by the polarization conversion surface and cannot pass through the energy conversion layer 5 to enter the back-end equipment protected by the energy selection structure. However, when back-end equipment such as radar emits low-power x-polarized waves, the electromagnetic waves can propagate through the energy selection structure. This design achieves protection against fully polarized high-power microwaves without affecting the normal operation of the back-end equipment.

[0015] The innovation of this invention lies in:

[0016] First, a polarization conversion structure was added, which changed the direction of the linearly polarized wave passing through the energy selective surface to an orthogonal direction, realizing full polarization protection of the back-end receiving equipment and further enhancing the high-power protection capability of the energy selective surface.

[0017] Second, the design of the entire energy selection surface is very compact, achieving the advantage of low profile compared with other similar designs. Attached Figure Description

[0018] Figure 1 This is a schematic diagram of the overall structure of the present invention;

[0019] Figure 2-1 This is a schematic diagram of the layered structure of the present invention;

[0020] Figure 2-2 This is a schematic diagram of the structure of frequency selection layer 3 and frequency selection layer 7 of the present invention;

[0021] Figure 2-3 This is a schematic diagram of the polarization conversion layer 5 of the present invention;

[0022] Figure 3 This is the frequency response of the energy selection structure in this invention under low-power y-polarized incident wave conditions;

[0023] Figure 4 This is the frequency response of the energy selection structure in this invention under low-power x-polarized incident wave conditions;

[0024] Figure 5 This is the frequency response of the energy selection structure in this invention under high-power y-polarized incident wave conditions;

[0025] Figure 6 This is the frequency response of the energy selection structure in this invention under high-power x-polarized incident wave conditions. Detailed Implementation

[0026] The following specific examples illustrate the implementation of the present invention. Those skilled in the art can easily understand other advantages and effects of the present invention from the content disclosed in this specification. The present invention can also be implemented or applied through other different specific embodiments, and various details in this specification can also be modified or changed based on different viewpoints and applications without departing from the spirit of the present invention.

[0027] This design provides an integrated ultra-wideband polarization selection and energy selection structure, characterized in that, from top to bottom, it comprises: a first energy selection layer 1, a dielectric layer 2, a frequency selection layer 3, a dielectric layer 4, a polarization conversion layer 5, a dielectric layer 6, a frequency selection layer 7, a dielectric layer 8, a second energy selection layer 9, and a PIN diode 10 loaded on the first energy selection layer 1 and the second energy selection layer 9; the first energy selection layer 1 is located on the upper surface of the dielectric layer 2; the frequency selection layer 3 is printed between the dielectric layers 2 and 4; the polarization conversion layer 5 is printed between the dielectric layers 4 and 6; the frequency selection layer 7 is printed between the dielectric layers 6 and 8; and the second energy selection layer 9 is located on the lower surface of the dielectric layer 8.

[0028] Figure 1 This is the overall structure of the present invention. The structure of the present invention is a multi-layered sandwich structure, which consists of metasurface structures and dielectric layers with different functions.

[0029] Figure 2-1It is a schematic diagram of the hierarchical structure of the present invention. The first energy selection layer 1 is composed of four "Ji"-shaped metal patches. The four metal patches are divided into two pairs. The two metal patches in each pair are arranged in parallel. One pair of metal patches is obtained by rotating the other pair of metal patches 180° around the center. The structure of the second energy selection layer 9 is obtained by rotating the first energy selection layer 1 90° along the z-axis and is located on the lower surface of the dielectric layer 8. The width of both ends of the "Ji"-shaped metal patch is w1 = 0.75 mm, the width of the crossbeam of the metal patch is w2 = 0.5 mm, the length of both ends of the metal patch is l1 = 3.5 mm, and the lengths on both sides of the crossbeam are l2 = 1.35 mm and l3 = 0.6 mm respectively. The PIN diode 10 is located in the middle of the "Ji"-shaped metal patches of the first energy selection layer 1 and the second energy selection layer 9, with a length of w2 = 0.5 mm and a width of l4 = 0.3 mm. The materials of the dielectric layers 2, 4, 6, and 8 are F4B. The thickness h of a single dielectric layer is 2 mm, and the size of the unit structure is p*p, where the value of p is 8 mm.

[0030] Figure 2-2 It is a schematic diagram of the structures of the frequency selection layer 3 and the frequency selection layer 7 of the present invention. The frequency selection layer 3 is composed of a rectangular metal patch, and two mutually orthogonal zigzag slots are loaded on the metal patch. The frequency selection layer 7 is located on the lower surface of the dielectric layer 6 and has the same structure as the frequency selection layer 3. The longitudinal lengths of the zigzag slots are a1 = 0.6 mm, a2 = 0.9 mm, and a3 = 1 mm, and the transverse widths are b1 = 0.7 mm and b2 = 1.4 mm.

[0031] Figure 2-3 It is a schematic diagram of the structure of the polarization conversion layer 5 of the present invention. The polarization conversion layer 5 is composed of a circular metal strip patch with a notch placed at a 45° angle, and the symmetry axis is in the 45° direction of the xoy plane. The outer radius of the circular metal strip patch is Ro = 3.6 mm and the inner radius is Ri = 3.5 mm.

[0032] Figure 3 It illustrates the frequency response of the energy selection structure under the condition of a low-power y-polarized incident wave. When a low-power y-polarized wave is incident, the insertion loss within 4.75 GHz to 4.95 GHz is less than 5 dB, and the wave absorption rate at 4.5 GHz can reach 55%, which conforms to the theoretical analysis results.

[0033] Figure 4 It illustrates the frequency response of the energy selection structure under the condition of a low-power x-polarized incident wave. When a low-power x-polarized wave is incident, the shielding effectiveness within 4.8 GHz to 5 GHz is greater than 10 dB.

[0034] Figure 5The frequency response of the energy selective structure under high-power y-polarized incident waves is demonstrated. Under high-power y-polarized wave incidence, the protection effectiveness across the entire frequency band is greater than 20 dB.

[0035] Figure 6 The frequency response of the energy selective structure under high-power x-polarized incident waves was demonstrated. Under high-power x-polarized wave incidence, the protection effectiveness across the entire frequency band is greater than 10 dB.

[0036] The above embodiments are merely illustrative of the principles and effects of the present invention and are not intended to limit the invention. Any person skilled in the art can modify or alter the above embodiments without departing from the spirit and scope of the present invention. Therefore, all equivalent modifications or alterations made by those skilled in the art without departing from the spirit and technical concept disclosed in the present invention should still be covered by the claims of the present invention.

Claims

1. An integrated structure for ultra-wideband polarization selection and energy selection, characterized in that, From top to bottom, the components are successively: a first energy selection layer (1), a dielectric layer (2), a frequency selection layer (3), a dielectric layer (4), a polarization conversion layer (5), a dielectric layer (6), a frequency selection layer (7), a dielectric layer (8), a second energy selection layer (9), and PIN diodes (10) loaded on the first energy selection layer (1) and the second energy selection layer (9).

2. The integrated structure for ultra-wideband polarization selection and energy selection according to claim 1, characterized in that: The first energy selection layer (1) is composed of four "Ji"-shaped metal patches. The four metal patches are divided into two pairs. The two metal patches in each pair are arranged in parallel, and one pair of metal patches is obtained by rotating the other pair of metal patches 180° around the center.

3. The "V"-shaped metal patch according to claim 2, characterized in that: The PIN diodes (10) are located in the middle of the "Ji"-shaped metal patches of the first energy selection layer (1) and the second energy selection layer (9).

4. The ultra-wideband polarization selection and energy selection integrated structure according to claim 1, characterized in that: The frequency selection layer (3) is composed of a rectangular metal patch, and two mutually orthogonal zigzag slots are loaded on the metal patch.

5. The ultra-wideband polarization selection and energy selection integrated structure according to claim 1, characterized in that: The polarization conversion layer (5) is composed of a circular metal strip patch with a 45°-inclined notch, and the symmetry axis is in the 45°-inclined direction of the xoy plane.

6. The integrated structure for ultra-wideband polarization selection and energy selection according to claim 1, characterized in that: The frequency selection layer (7) is located on the lower surface of the dielectric layer (6) and has the same structure as the frequency selection layer (3).

7. The ultra-wideband polarization selection and energy selection integrated structure according to claim 1, characterized in that: The structure of the second energy selection layer (9) is obtained by rotating the first energy selection layer (1) 90° along the z-axis and is located on the lower surface of the dielectric layer (8).

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