Light-emitting chip, display module and electronic equipment

Abstract

The invention provides a light-emitting chip, a display module and electronic equipment. The light-emitting chip comprises a substrate, a plurality of light-emitting devices and a light absorption structure. The light-emitting devices are separately arranged on the substrate, and a groove is formed between every two adjacent light-emitting devices. The light absorption structures are located on the sides, away from the substrate, of the grooves, and the light absorption structures are located between the adjacent light emitting devices. According to the invention, the light absorption structure can absorb stray light emitted by the light-emitting device, and improves the collimation of the emergent light of the light-emitting chip. Therefore, the light-emitting chip in the embodiment of the invention does not need to be provided with a collimation structure, so that the distance between the adjacent light-emitting devices can be reduced, and the density of the light-emitting devices in the light-emitting chip is improved.

Description

Technical Field

[0001] This application relates to the field of semiconductor technology, and in particular to a light-emitting chip, a display module, and an electronic device. Background Technology

[0002] Micro / Mini light-emitting diodes (LEDs) are formed by thinning, miniaturizing, and arraying the structure of light-emitting diodes (LEDs). Micro / Mini LEDs inherit the long lifespan, high brightness, and low power consumption of LEDs, and also possess advantages such as ultra-high resolution, high color saturation, and nanosecond-level response speed. They can be widely used in near-eye displays, smartwatches, smartphones, tablets, automotive displays, smart car lights, large-screen displays, and other fields.

[0003] In related technologies, Micro / Mini LED light-emitting chips contain multiple light-emitting devices. To collimate the light emitted from these devices, a collimation structure is needed on the light-emitting side of each device. However, the size of the collimation structure is generally larger than the size of the light-emitting devices. This increases the spacing between adjacent light-emitting devices, making it difficult to increase the density of the light-emitting devices. Summary of the Invention

[0004] This application provides a light-emitting chip, a display module, and an electronic device to increase the density of light-emitting devices in the light-emitting chip.

[0005] In a first aspect, embodiments of this application provide a light-emitting chip, which may include: a substrate, multiple light-emitting devices, and a light-absorbing structure. Each light-emitting device is disposed separately on the substrate, and trenches are formed between adjacent light-emitting devices. The light-absorbing structure is located on the side of the trench facing away from the substrate, and is positioned between adjacent light-emitting devices. The light-absorbing structure can be a black (or other light-absorbing color) insulating material, for example, it can be a black adhesive or carbon black adhesive made of polyimide material, or the light-absorbing structure 13 may include a light-absorbing metal material, for example, the light-absorbing metal may be, but is not limited to, an alloy formed from one or more combinations of nickel, chromium, and titanium. The thickness of the light-absorbing structure can be in the range of 1µm to 250µm.

[0006] In the light-emitting chip provided in this application embodiment, a light-absorbing structure is provided between adjacent light-emitting devices. This light-absorbing structure can absorb stray light emitted from the light-emitting devices, preventing crosstalk between light emitted from adjacent devices and improving the collimation of the light emitted from the light-emitting chip. Therefore, the light-absorbing structure in this application embodiment can replace the collimation structure in related technologies. That is, the light-emitting chip in this application embodiment does not need to have a collimation structure, thereby reducing the spacing between adjacent light-emitting devices and increasing the density of light-emitting devices in the chip.

[0007] In the embodiments of this application, each light-emitting device may include: a first semiconductor layer, a second semiconductor layer, and an active layer. The active layer may be located between the first semiconductor layer and the second semiconductor layer, and the first semiconductor layer may be located between the substrate and the active layer. The first semiconductor layer and the second semiconductor layer may include different types of semiconductor materials, enabling the first semiconductor layer and the second semiconductor layer to provide different charge carriers (electrons or holes). For example, the first semiconductor layer includes a P-type semiconductor material, and the second semiconductor layer includes an N-type semiconductor material; or, the first semiconductor layer includes an N-type semiconductor material, and the second semiconductor layer includes a P-type semiconductor material. The P-type semiconductor material can provide holes, and the N-type semiconductor material can provide electrons. The electrons and holes provided by the first semiconductor layer and the second semiconductor layer can move to the active layer under the drive of an electric field and recombine to emit light. For example, the P-type semiconductor material may include, but is not limited to, P-type gallium nitride, P-type gallium arsenide, P-type aluminum gallium indium phosphide, etc., and the N-type semiconductor material may include, but is not limited to, N-type gallium nitride, N-type gallium arsenide, N-type aluminum gallium indium phosphide, etc., and the active layer may include, but is not limited to, quantum hydrazine material, quantum dot material, gallium nitride material, organic light-emitting material, etc.

[0008] In different light-emitting devices, the first semiconductor layer, active layer, and second semiconductor layer are separated by trenches to avoid crosstalk between adjacent light-emitting devices. In the same light-emitting device, the edges of the first semiconductor layer, active layer, and second semiconductor layer are flush, and the angle θ between the sidewall of the light-emitting device and the substrate surface can be within the range of 80° to 90°. It is understood that "flush" in this embodiment refers to being substantially flush within a certain error range. In this embodiment, the sidewall of the light-emitting device is approximately perpendicular to the substrate surface, allowing the light-emitting device to emit light in a direction approximately perpendicular to the substrate surface. This configuration further improves the collimation of the emitted light from the light-emitting chip. Furthermore, it increases the area ratio of the active layer to the light-emitting chip, resulting in a lower current density for the same current drive, effectively improving the photoelectric performance of the light-emitting chip and thus reducing the heat generated by the chip.

[0009] In specific configurations, the area ratio of the first semiconductor layer to the second semiconductor layer in the light-emitting device can be in the range of 0.85:1.1 to 1.1:0.85.

[0010] In this embodiment, the shape of the light-emitting device can be a three-dimensional cylinder, a three-dimensional square, a three-dimensional rectangle, a three-dimensional polygon, etc., and the shape of the light-emitting device can be set according to actual needs. The ratio between the maximum width of the light-emitting device and the height of the light-emitting device is in the range of 0.25:1 to 1:0.25, and the maximum width of the light-emitting device is in the range of 0.1μm to 100μm. The maximum width of the light-emitting device refers to the maximum value of its width along the substrate surface, and the height of the light-emitting device refers to the distance between the lower surface of the first semiconductor layer and the upper surface of the second semiconductor layer.

[0011] The light-emitting chip in this embodiment may further include: a plurality of first electrodes and a second electrode. Each first electrode corresponds to a position of a light-emitting device, and adjacent first electrodes are separated by trenches. Each first electrode is located between the corresponding light-emitting device and the substrate, and the first electrode is in contact with the first semiconductor layer in the corresponding light-emitting device. The second electrode is located between the trench and the light-absorbing structure, and the second electrode is in contact with the second semiconductor layer in each light-emitting device. In the light-emitting chip of this embodiment, the first electrodes of each light-emitting device are separated by trenches, allowing each light-emitting device to be independent. In specific implementation, by applying an electrical signal to the first and second electrodes, an electric field is formed between the first and second electrodes, which can drive the movement of charge carriers in the first and second semiconductor layers.

[0012] For example, the first electrode may include, but is not limited to, at least one of the following metallic materials or metal alloys: Cr, Ti, Al, Pt, Ni, Cu, Ag, Au, CuW, W, TiN, and TaN. The selection can be made according to actual needs and is not specifically limited herein. The second electrode may include, but is not limited to, at least one of the following metallic materials or metal alloys: Cr, Ti, Al, Pt, Ni, Cu, Ag, Au, CuW, W, TiN, and TaN. The selection can be made according to actual needs and is not specifically limited herein.

[0013] In one possible implementation, the light-emitting devices in the light-emitting chip can share the same second electrode, meaning the second electrodes corresponding to each light-emitting device can be connected as a whole. Furthermore, the film layer containing the second electrode can also have multiple openings, each corresponding to a position of a light-emitting device, allowing the light-emitting device to emit light through the opening. In a specific configuration, the area of ​​the opening is smaller than the area of ​​the light-emitting device at the corresponding position, and the projection of the second electrode onto the substrate can cover the projection of the trench onto the substrate, allowing the second electrode to span the trench and overlap the edges of each light-emitting device, thus enabling the second electrode to contact and connect with the second semiconductor layer. Additionally, the projection of the second electrode onto the substrate can cover the projection of the light-absorbing structure onto the substrate, thus preventing the area of ​​the light-absorbing structure from being too large and affecting the light emission effect of each light-emitting device. In a specific configuration, the shape of the second electrode can be set to match the shape of the light-absorbing structure. Furthermore, the shape of the trench can also be set to match the shape of the light-absorbing structure. In this embodiment, taking the sharing of the same second electrode by each light-emitting device as an example, in a specific configuration, the second electrodes corresponding to each light-emitting device can also be set separately, depending on actual needs, and are not limited here.

[0014] In a specific configuration, the light-emitting chip in this application embodiment may further include: a driving circuit layer located between the substrate and the first electrode, wherein a driving circuit is disposed in the driving circuit layer, the driving circuit can be electrically connected to the first electrode, and the driving circuit can be used to provide an electrical signal to the first electrode.

[0015] In one possible implementation, the light-emitting chip in this embodiment may further include: multiple transparent structures, each corresponding to a light-emitting device, with each transparent structure located on the side of the corresponding light-emitting device away from the substrate, and located outside the second electrode. The transparent structure is in contact with the second semiconductor layer of the corresponding light-emitting device. The refractive index of the transparent structure is less than the refractive index of the second semiconductor layer, and greater than the refractive index of air. By providing a transparent structure on the light-emitting side of the light-emitting device, and ensuring that the refractive index of the transparent structure is less than the refractive index of the second semiconductor layer and greater than the refractive index of air, the difference in refractive index among components along the light-emitting path of the light-emitting device can be reduced, increasing the critical angle of the emitted light. This facilitates the extraction of light emitted from the light-emitting device, improving the light extraction efficiency of the light-emitting chip. In one possible implementation, the transparent structure may be a transparent conductive material, allowing it to be electrically connected to the second electrode, improving the conductivity between the second electrode and the second semiconductor layer. For example, the transparent structure may be indium tin oxide (ITO). Of course, the light-transmitting structure can also include other light-transmitting materials, which are not limited here.

[0016] The light-emitting chip in this embodiment may further include a reflective structure located within a trench. Adjacent light-emitting devices can be separated by the reflective structure within the trench to prevent crosstalk between light emitted from adjacent devices. In this embodiment, the angle θ between the sidewall of the light-emitting device and the substrate surface can be in the range of 80° to 90°. This ensures that the sidewall of the trench is substantially perpendicular to the substrate, facilitating the filling of the reflective structure within the trench during the fabrication process and reducing manufacturing complexity. Specifically, the reflective structure can be substantially flush with the opening of the trench, or it can fill the trench and protrude beyond the opening. In some cases, the upper surface of the reflective structure can be slightly lower than the opening of the trench, depending on actual needs. Specifically, the reflective structure can be a single-layer structure, or it can be a Bragg reflective structure composed of multiple reflective films.

[0017] In one possible implementation, the reflective structure may include an insulating reflective material, such as polyimide (PI), white adhesive, or other materials with reflective properties.

[0018] In another possible implementation, the reflective structure may include a metallic material. Exemplarily, the reflective structure may be at least one of the following metallic materials or metal alloys, including but not limited to Cr, Ti, Al, Pt, Ni, Cu, Ag, Au, CuW, W, TiN, and TaN, and may be selected according to actual needs; no specific limitation is made herein.

[0019] In specific configurations, when the reflective structure includes a metallic material, it can be electrically connected to the second electrode. This configuration effectively increases the thickness of the second electrode in the direction perpendicular to the substrate, thereby reducing its resistance and consequently lowering the voltage drop of the applied electrical signal, thus improving the electrical performance of the light-emitting chip. During the fabrication process, the same material can be used for both the second electrode and the reflective structure. Specifically, the metallic material can be filled into the trench and protrude beyond it, extending to the edge of the light-emitting device, resulting in an electrically connected reflective structure and second electrode. This simplifies the fabrication process and reduces costs. Of course, different materials can also be used for both the second electrode and the reflective structure; this is not a limitation here.

[0020] The light-emitting chip in this embodiment may further include an insulating dielectric layer, which may cover the bottom and sidewalls of the trench, and is located between the reflective structure and the light-emitting device and the first electrode. By providing the insulating dielectric layer, when the reflective structure includes a metallic material, insulation can be maintained between the reflective structure and the light-emitting device and the first electrode.

[0021] In one possible implementation, the insulating dielectric layer may include a light-transmitting insulating material. For example, the insulating dielectric layer includes, but is not limited to, organic transparent insulating materials such as polymethyl methacrylate, polyester, polycarbonate, polystyrene, polyimide, and silicone resin. Alternatively, the insulating dielectric layer includes, but is not limited to, inorganic transparent materials such as silicon oxide, titanium oxide, aluminum nitride, aluminum oxide, silicon nitride, zirconium oxide, magnesium fluoride, tantalum oxide, and silicon carbide. The specific materials can be selected according to actual needs and are not specifically limited here.

[0022] In another possible implementation, the insulating dielectric layer may also comprise an insulating material with reflective properties. For example, the insulating dielectric layer may include materials with reflective properties such as polyimide (PI) or white adhesive. The insulating dielectric layer can be a single-layer structure, or it can be a Bragg reflective structure composed of multiple reflective films.

[0023] Furthermore, the insulating dielectric layer covering the sides of the light-emitting device and the first electrode prevents charge carriers provided by the first and second electrodes from moving along the sides of the light-emitting device and recombinating to emit light at those sides. In a specific implementation, the insulating dielectric layer can extend to the edge of the surface of the light-emitting device facing away from the substrate, i.e., the insulating dielectric layer can cover the edge of the second semiconductor layer, which can improve the insulation effect of the insulating dielectric layer and more effectively prevent charge carriers from recombinating to emit light at the sides of the light-emitting device. Moreover, when the insulating dielectric layer has reflective properties, it can also reflect the oblique light emitted from the light-emitting device back into the interior, allowing more light to be emitted in a direction perpendicular to the substrate, thus improving the collimation of the light emitted from the light-emitting chip. In a specific configuration, the projection of the insulating dielectric layer onto the substrate is within the range of the projection of the second electrode onto the substrate. Thus, part of the second electrode covers the insulating dielectric layer, and part covers the surface of the second semiconductor layer, maintaining an electrical connection between the second electrode and the second semiconductor layer.

[0024] In this embodiment, by setting a light-absorbing structure between adjacent light-emitting devices, the collimation of the light emitted from the light-emitting chip can be improved. This eliminates the need for a collimation structure in the light-emitting chip, thereby reducing the spacing between adjacent light-emitting devices and increasing the density of light-emitting devices in the chip. Multiple light-emitting devices in this embodiment can be arranged in an array. The arrangement of the light-emitting devices in this embodiment is described below.

[0025] In some embodiments of this application, the multiple light-emitting devices in the light-emitting chip can be divided into multiple light-emitting device groups. Each light-emitting device group may include multiple light-emitting devices arranged along a first direction, and each light-emitting device group is arranged along a second direction. The first and second directions are parallel to the surface of the substrate, and the first and second directions are perpendicular to each other. The light-emitting devices in two adjacent light-emitting device groups are staggered by a first distance, which is smaller than the distance between two adjacent light-emitting devices in a light-emitting device group. This arrangement of the light-emitting devices resembles the (100) facet of a face-centered cubic (FCC) lattice structure, allowing for a more compact arrangement. The light-absorbing structure is a mesh structure filling the gaps between the light-emitting devices.

[0026] In other embodiments of this application, multiple light-emitting devices in the light-emitting chip can be arranged in an array along a first direction and a second direction; wherein the first direction and the second direction are parallel to the surface of the substrate, and the first direction and the second direction are perpendicular to each other. The light-absorbing structure may include: multiple first light-absorbing strips and multiple second light-absorbing strips, each first light-absorbing strip extending along the first direction and arranged along the second direction, and each second light-absorbing strip extending along the second direction and arranged along the first direction. The multiple first light-absorbing strips and multiple second light-absorbing strips in the light-absorbing structure are interconnected, making the light-absorbing structure a grid structure. With this configuration, the arrangement of multiple light-emitting devices in the light-emitting chip is relatively compact, and the density of light-emitting devices is high. In specific implementations, the size of the light-emitting devices and the spacing between adjacent light-emitting devices can be reasonably set according to actual needs.

[0027] In specific settings, the cross-sectional shape of the light-emitting device can be circular, rectangular, elliptical, rectangular, polygonal, etc., and can be set according to actual needs. There are no restrictions here.

[0028] In this embodiment, the arrangement of the light-emitting devices is only illustrated by example. In actual implementation, the arrangement of the light-emitting devices in the light-emitting chip can be reasonably set according to actual needs, and no limitation is made here.

[0029] Secondly, embodiments of this application also provide a display module, which may include a display panel and any of the light-emitting chips mentioned in the first aspect. The light-emitting chip is located on the light-incident side of the display panel and is used to provide a backlight to the display panel. Because the density of light-emitting devices in the light-emitting chip in the first aspect is high, the light-emitting chip has good light emission performance, which can provide a backlight of suitable brightness for the display panel and improve the display effect of the display module. In specific implementations, the light-emitting chip in embodiments of this application may include one or more light-emitting devices of different colors. The light-emitting devices may cooperate with structures such as quantum dot (QD) color filters, color filters, and photoluminescent (QDCC) color filters in the display panel to achieve a full-color display effect.

[0030] Thirdly, embodiments of this application also provide an electronic device.

[0031] In one possible implementation, the electronic device in this application embodiment may include any of the light-emitting chips described in the first aspect above and a circuit board, with the light-emitting chip electrically connected to the circuit board. The light-emitting chip in this application embodiment can be applied in the display field, serving as a direct display screen, and under the control of the circuit board, it can display images. In specific implementations, the light-emitting chip may include one or more color light-emitting devices, which can be combined with structures such as quantum dot (QD) color filters, color filters, and photoluminescent (QDCC) color filters to achieve a full-color display effect. Due to the high density of the light-emitting devices in the first aspect above, the electronic device including the light-emitting chip in the first aspect has a better display effect. Alternatively, the light-emitting chip in this application embodiment can be applied in the lighting field, serving as a light source, emitting light of a certain brightness under the control of the circuit board, and achieving pixelated control of the lighting area. Due to the high density of the light-emitting devices in the first aspect above, the electronic device including the light-emitting chip in the first aspect has a better lighting effect.

[0032] In another possible implementation, the electronic device in this application embodiment may include: the display module and the circuit board described in the second aspect above, with the display module electrically connected to the circuit board. That is, the light-emitting chip in this application embodiment can be applied in the field of display technology, and the light-emitting chip can serve as a backlight in the display module. Because the density of the light-emitting devices in the first aspect is high, the electronic device including the light-emitting chip described in the first aspect has a better display effect. Attached Figure Description

[0033] Figure 1 This is a schematic diagram illustrating an application scenario of an embodiment of this application;

[0034] Figure 2 This is a schematic diagram of the structure of a light-emitting chip in related technologies;

[0035] Figure 3 A top view of the light-emitting chip provided in an embodiment of this application;

[0036] Figure 4 for Figure 3 A schematic diagram of the cross-section at the dashed line AA';

[0037] Figure 5 This is a comparative structural diagram of the light-emitting chip in the embodiments of this application and related technologies;

[0038] Figure 6 This is a top view of the second electrode in an embodiment of this application;

[0039] Figure 7 This is a schematic diagram showing the arrangement of the light-emitting devices in an embodiment of this application;

[0040] Figure 8 This is another schematic diagram showing the arrangement of the light-emitting devices in an embodiment of this application.

[0041] Figure label:

[0042] 100 - Structural component; 200 - Optical assembly; 201 - Lens; 202 - Optomechanical system; 10 - Substrate; 101 - Driving circuit layer; 11 - Light-emitting device; 111 - First semiconductor layer; 112 - Second semiconductor layer; 113 - Active layer; 11m - Light-emitting device group; 12 - Collimation structure; 13 - Light-absorbing structure; 131 - First light-absorbing strip; 132 - Second light-absorbing strip; 14 - First electrode; 15 - Second electrode; 16 - Transmitting structure; 17 - Reflecting structure; 18 - Insulating dielectric layer; U - Trench; V - Opening; F1 - First direction; F2 - Second direction. Detailed Implementation

[0043] To make the objectives, technical solutions, and advantages of this application clearer, the application will now be described in further detail with reference to the accompanying drawings.

[0044] It should be noted that the accompanying drawings in this application are for illustrative purposes only and do not represent actual scale. The same reference numerals in the accompanying drawings denote the same or similar structures, and therefore, repeated descriptions of them will be omitted.

[0045] The terms describing position and direction used in this application, such as "center," "upper," "lower," "left," "right," "vertical," "horizontal," "inner," and "outer," are merely illustrative examples based on the orientation or positional relationships shown in the accompanying drawings. They are intended solely for the convenience of describing this application and for simplifying the description, and do not indicate or imply that the device or element referred to must have a specific orientation, or be constructed and operated in a specific orientation. Therefore, they should not be construed as limitations on this application. Changes may be made as needed, and all such changes are included within the scope of protection of this application. Furthermore, the terms "first" and "second" are used for descriptive purposes only and should not be construed as indicating or implying relative importance.

[0046] To facilitate understanding of the technical solutions provided in the embodiments of this application, the application scenarios of this application will be introduced first below.

[0047] The light-emitting chip provided in this application embodiment can be a miniature light-emitting diode chip, which can be a Micro LED chip, a Mini LED chip, or an LED chip of other specifications. The light-emitting chip in this application embodiment can be applied to various electronic devices such as display devices and lighting devices. Display devices include, but are not limited to, near-eye display devices, smartwatches, smartphones, tablets, automotive display devices, large-screen display devices, and projection display devices. Lighting devices include, but are not limited to, light source devices and smart car lights.

[0048] Figure 1 This is a schematic diagram illustrating an application scenario of an embodiment of this application, such as... Figure 1 As shown, taking the application of the light-emitting chip in a near-eye display device as an example, the near-eye display device can be an augmented reality (AR) display device, a virtual reality (VR) display device, etc. The near-eye display device may include: a structural component 100 and an optical component 200. The structural component 100 can be used to construct the overall form factor of the near-eye display device, for example... Figure 1 In this embodiment, structural component 100 can be shaped like glasses, meaning the near-eye display device can be AR / VR glasses. Furthermore, structural component 100 can also be used to mount optical component 200, which may include lens 201 and optical engine 202. The light-emitting chip in this embodiment can be integrated into the optical engine 202. Figure 1 The application scenario of this application embodiment is illustrated using AR / VR glasses as an example. When the light-emitting chip in this application embodiment is applied to other scenarios, it can be set according to the actual situation, and will not be listed one by one here.

[0049] Figure 2 This is a schematic diagram of the structure of a light-emitting chip in related technologies, such as... Figure 2As shown, the light-emitting chip in the related technology includes a substrate 10 and a plurality of light-emitting devices 11 located on the substrate 10. To collimate the light emitted from the light-emitting devices 11, a collimation structure 12 is provided on the light-emitting side of the light-emitting device 11. The collimation structure 12 is generally a microlens. However, the light-emitting devices 11 and the collimation structure 12 are stacked, and the collimation structure 12 is generally larger than the size of the light-emitting device 11. For example, the area ratio of the collimation structure 12 to the light-emitting device 11 is approximately 4:1. The collimation structure 12 reduces the spacing between adjacent light-emitting devices 11, making it difficult to increase the density of the light-emitting devices 11.

[0050] Based on this, in order to increase the density of light-emitting devices in the light-emitting chip, the technical solution provided in this application embodiment has improved the structure of the light-emitting chip. The light-emitting chip provided in this application embodiment will be described in detail below with reference to the accompanying drawings.

[0051] Figure 3 This is a top view of the light-emitting chip provided in an embodiment of this application. Figure 4 for Figure 3 A schematic diagram of the cross-section at the dashed line AA', as shown below. Figure 3 and Figure 4 As shown, the light-emitting chip provided in this embodiment may include: a substrate 10, a plurality of light-emitting devices 11, and a light-absorbing structure 13. Each light-emitting device 11 is discretely disposed on the substrate 10, and a trench U is formed between adjacent light-emitting devices 11. The light-absorbing structure 13 is located on the side of the trench U facing away from the substrate 10, and is positioned between adjacent light-emitting devices 11. The light-absorbing structure 13 can be a black (or other light-absorbing color) insulating material. For example, the light-absorbing structure 13 can be a black adhesive or carbon black adhesive made of polyimide material, or it can include a light-absorbing metal material. For example, the light-absorbing metal may include, but is not limited to, an alloy formed from one or more combinations of nickel, chromium, and titanium. The thickness of the light-absorbing structure 13 can be in the range of 1µm to 250µm.

[0052] In the light-emitting chip provided in this application embodiment, a light-absorbing structure 13 is provided between adjacent light-emitting devices 11. The light-absorbing structure 13 can absorb stray light emitted from the light-emitting devices 11, prevent crosstalk between light emitted from adjacent light-emitting devices 11, and improve the collimation of the light emitted from the light-emitting chip. Therefore, the light-absorbing structure 13 in this application embodiment can replace the collimation structure in related technologies. That is, the light-emitting chip in this application embodiment does not need to be provided with a collimation structure, thereby reducing the spacing between adjacent light-emitting devices 11 and increasing the density of light-emitting devices 11 in the light-emitting chip.

[0053] Figure 5 This is a comparative structural diagram of the light-emitting chip in the embodiments of this application and related technologies. Figure 5Image (1) is a partial top view of a light-emitting chip in the relevant technology. Figure 5 (2) is a partial top view of the light-emitting chip in an embodiment of this application. Figure 5 As shown, for ease of comparison with the technical solutions of this application and related technologies, Figure 5 The light-emitting chips shown in (1) and (2) have equal local areas, and the area of ​​the light-emitting device 11 is also equal. Figure 5 In (1) of the related technology, because a collimation structure 12 is provided on the light-emitting side of the light-emitting device 11, the collimation structure 12 increases the spacing between adjacent light-emitting devices 11, resulting in a lower density of light-emitting devices 11, for example in Figure 5 The partial top view shown in (1) shows only one light-emitting device 11 (four quarter-area light-emitting devices 11 located at the four corners). Figure 5 In embodiment (2) of this application, a light-absorbing structure 13 is provided between adjacent light-emitting devices 11. The light-absorbing structure 13 can absorb stray light emitted from the light-emitting devices 11, eliminating the need for a collimation structure in the light-emitting chip and increasing the density of the light-emitting devices 11, for example... Figure 5 The partial top view shown in (2) shows two light-emitting devices 11 (four quarter-area light-emitting devices 11 located at the four corners and one light-emitting device 11 located in the middle). (Comparison) Figure 5 As can be clearly seen from (1) and (2) in the present application, the technical solution provided in the embodiment of this application can significantly increase the density of the light-emitting device 11.

[0054] like Figure 4As shown in the embodiments of this application, each light-emitting device 11 may include: a first semiconductor layer 111, a second semiconductor layer 112, and an active layer 113. The active layer 113 may be located between the first semiconductor layer 111 and the second semiconductor layer 112, and the first semiconductor layer 111 may be located between the substrate 10 and the active layer 113. The first semiconductor layer 111 and the second semiconductor layer 112 may include different types of semiconductor materials, so that the first semiconductor layer 111 and the second semiconductor layer 112 can provide different charge carriers (electrons or holes). For example, the first semiconductor layer 111 includes a P-type semiconductor material, and the second semiconductor layer 112 includes an N-type semiconductor material; or, the first semiconductor layer 111 includes an N-type semiconductor material, and the second semiconductor layer 112 includes a P-type semiconductor material. The P-type semiconductor material can provide holes, and the N-type semiconductor material can provide electrons. The electrons and holes provided by the first semiconductor layer 111 and the second semiconductor layer 112 can move to the active layer 113 under the drive of an electric field and recombine to emit light. For example, the P-type semiconductor material may include, but is not limited to, P-type gallium nitride, P-type gallium arsenide, P-type aluminum gallium indium phosphide, etc., and the N-type semiconductor material may include, but is not limited to, N-type gallium nitride, N-type gallium arsenide, N-type aluminum gallium indium phosphide, etc., and the active layer 113 may include, but is not limited to, quantum hydrazine material, quantum dot material, gallium nitride material, organic light-emitting material, etc.

[0055] The first semiconductor layer 111, active layer 113, and second semiconductor layer 112 in different light-emitting devices 11 are separated by trenches U, which can prevent crosstalk between adjacent light-emitting devices 11. In the same light-emitting device 11, the edges of the first semiconductor layer 111, active layer 113, and second semiconductor layer 112 are flush, and the angle θ between the sidewall of the light-emitting device 11 and the surface of the substrate 10 can be in the range of 80° to 90°. It is understood that the flushing in the embodiments of this application refers to being basically flush within a certain error range. In the embodiments of this application, the sidewall of the light-emitting device 11 is approximately perpendicular to the surface of the substrate 10, which allows the light-emitting device 11 to emit light in a direction approximately perpendicular to the surface of the substrate 10. This setting can further improve the collimation of the emitted light of the light-emitting chip. Furthermore, it can increase the area ratio of the active layer 113 to the light-emitting chip, achieving a lower current density under the same current driving condition, which can effectively improve the photoelectric performance of the light-emitting chip, thereby reducing the heat generated by the light-emitting chip.

[0056] In a specific configuration, the area ratio of the first semiconductor layer 111 to the second semiconductor layer 112 in the light-emitting device 11 can be in the range of 0.85:1.1 to 1.1:0.85.

[0057] In this embodiment, the shape of the light-emitting device 11 can be a three-dimensional cylinder, a three-dimensional square, a three-dimensional rectangle, a three-dimensional polygon, etc., and the shape of the light-emitting device 11 can be set according to actual needs. The ratio between the maximum width of the light-emitting device 11 and the height of the light-emitting device 11 is in the range of 0.25:1 to 1:0.25, and the maximum width of the light-emitting device 11 is in the range of 0.1μm to 100μm. The maximum width of the light-emitting device 11 refers to the maximum value of its width along the surface of the substrate 10, and the height of the light-emitting device 11 refers to the distance between the lower surface of the first semiconductor layer 111 and the upper surface of the second semiconductor layer 112.

[0058] Continue to refer to Figure 4 The light-emitting chip in this embodiment may further include a plurality of first electrodes 14 and a second electrode 15. Each first electrode 14 corresponds to a position of a light-emitting device 11, and adjacent first electrodes 14 are separated by a trench U. Each first electrode 14 is located between the corresponding light-emitting device 11 and the substrate 10, and the first electrode 14 is in contact with the first semiconductor layer 111 in the corresponding light-emitting device 11. The second electrode 15 is located between the trench U and the light-absorbing structure 13, and the second electrode 15 is in contact with the second semiconductor layer 112 in each light-emitting device 11. In the light-emitting chip of this embodiment, the first electrodes 14 of each light-emitting device 11 are separated by the trench U, allowing each light-emitting device 11 to be independent of each other. In specific implementation, by applying an electrical signal to the first electrode 14 and the second electrode 15, an electric field is formed between the first electrode 14 and the second electrode 15, which can drive the movement of charge carriers in the first semiconductor layer 111 and the second semiconductor layer 112.

[0059] For example, the first electrode 14 may include, but is not limited to, at least one of the following metallic materials or metal alloys: Cr, Ti, Al, Pt, Ni, Cu, Ag, Au, CuW, W, TiN, and TaN. The selection can be made according to actual needs and is not specifically limited herein. The second electrode 15 may include, but is not limited to, at least one of the following metallic materials or metal alloys: Cr, Ti, Al, Pt, Ni, Cu, Ag, Au, CuW, W, TiN, and TaN. The selection can be made according to actual needs and is not specifically limited herein.

[0060] Figure 6 This is a top view of the second electrode in an embodiment of this application, combined with... Figure 3 , Figure 4 and Figure 6In one possible implementation, each light-emitting device 11 in the light-emitting chip can share the same second electrode 15, meaning the second electrodes 15 corresponding to each light-emitting device 11 can be connected as a whole. Furthermore, the film layer containing the second electrode 15 can also have multiple openings V, each opening V corresponding to the position of a light-emitting device 11, allowing the light-emitting device 11 to emit light through the opening V. In a specific configuration, the area of ​​the opening V is smaller than the area of ​​the light-emitting device 11 at the corresponding position, and the projection of the second electrode 15 onto the substrate 10 can cover the projection of the trench U onto the substrate 10, allowing the second electrode 15 to span the trench U and overlap the edges of each light-emitting device 11, so that the second electrode 15 can contact and connect with the second semiconductor layer 112. Furthermore, the projection of the second electrode 15 onto the substrate 10 can cover the projection of the light-absorbing structure 13 onto the substrate 10, thus preventing the area of ​​the light-absorbing structure 13 from being too large and affecting the light emission effect of each light-emitting device 11. In a specific configuration, the shape of the second electrode 15 can be set to be consistent with the shape of the light-absorbing structure 13. Furthermore, the shape of the trench U can also be set to be consistent with the shape of the light-absorbing structure 13. In this embodiment of the application, taking the sharing of the same second electrode 15 by each light-emitting device 11 as an example, in specific settings, the second electrodes 15 corresponding to each light-emitting device 11 can also be set separately, which can be set according to actual needs, and is not limited here.

[0061] In a specific configuration, the light-emitting chip in this application embodiment may further include: a driving circuit layer 101 located between the substrate 10 and the first electrode 14, wherein a driving circuit is provided in the driving circuit layer 101, the driving circuit can be electrically connected to the first electrode 14, and the driving circuit can be used to provide an electrical signal to the first electrode 14.

[0062] In one possible implementation, such as Figure 4As shown, the light-emitting chip in this embodiment may further include: a plurality of light-transmitting structures 16, each light-transmitting structure 16 corresponding to a light-emitting device 11, each light-transmitting structure 16 being located on the side of the corresponding light-emitting device 11 facing away from the substrate 10, and the light-transmitting structure 16 being located outside the second electrode 15. The light-transmitting structure 16 is in contact with the second semiconductor layer 112 of the corresponding light-emitting device 11. The refractive index of the light-transmitting structure 16 is less than the refractive index of the second semiconductor layer 112, and the refractive index of the light-transmitting structure 16 is greater than the refractive index of air. By providing a light-transmitting structure 16 on the light-emitting side of the light-emitting device 11, and the refractive index of the light-transmitting structure 16 being less than the refractive index of the second semiconductor layer 112 and greater than the refractive index of air, the difference in refractive index of each component in the light-emitting path of the light-emitting device 11 can be reduced, the critical angle of the emitted light can be increased, thereby facilitating the extraction of the light emitted by the light-emitting device 11 and improving the light extraction efficiency of the light-emitting chip. In one possible implementation, the light-transmitting structure 16 can be a transparent conductive material, thus allowing it to be electrically connected to the second electrode 15 and improving the conductivity between the second electrode 15 and the second semiconductor layer 112. For example, the light-transmitting structure 16 can be indium tin oxide (ITO). Of course, the light-transmitting structure 16 can also include other light-transmitting materials, which are not limited here.

[0063] like Figure 4 As shown, the light-emitting chip in this embodiment may further include a reflective structure 17 located within the trench U. Adjacent light-emitting devices 11 can be separated by the reflective structure 17 within the trench U to prevent crosstalk between the light emitted from adjacent light-emitting devices 11. In this embodiment, the angle θ between the sidewall of the light-emitting device 11 and the surface of the substrate 10 can be in the range of 80° to 90°. Thus, the sidewall of the trench U is substantially perpendicular to the substrate 10, which facilitates filling the reflective structure 17 within the trench U during the fabrication process, reducing the complexity of the process. In specific configurations, the reflective structure 17 can be substantially flush with the opening of the trench U, or the reflective structure 17 can fill the trench U and protrude beyond the opening of the trench U. Of course, in some cases, the upper surface of the reflective structure 17 can also be slightly lower than the opening of the trench U, depending on actual needs. In specific configurations, the reflective structure 17 can be a single-layer structure, or the reflective structure 17 can be a Bragg reflective structure composed of multiple reflective films.

[0064] In one possible implementation, the reflective structure 17 may include an insulating reflective material, such as polyimide (PI), white adhesive, or other materials with reflective properties.

[0065] In another possible implementation, the reflective structure 17 may include a metallic material. Exemplarily, the reflective structure 17 may be at least one of the following metallic materials or metal alloys, including but not limited to Cr, Ti, Al, Pt, Ni, Cu, Ag, Au, CuW, W, TiN, and TaN, and may be selected according to actual needs, without specific limitations herein.

[0066] In a specific configuration, when the reflective structure 17 includes a metallic material, it can be electrically connected to the second electrode 15. This configuration effectively increases the thickness of the second electrode 15 in the direction perpendicular to the substrate 10, thereby reducing the resistance of the second electrode 15 and consequently reducing the voltage drop of the electrical signal applied to it, thus improving the electrical performance of the light-emitting chip. During the fabrication process, the same material can be used to fabricate both the second electrode 15 and the reflective structure 17. Specifically, the metallic material can be filled into the trench U and protrude beyond it, extending to the edge of the light-emitting device 11, thus creating an electrically connected reflective structure 17 and second electrode 15. This simplifies the fabrication process and reduces costs. Of course, different materials can also be used to fabricate the second electrode 15 and the reflective structure 17; this is not limited here.

[0067] Continue to refer to Figure 4 The light-emitting chip in this embodiment may further include an insulating dielectric layer 18, which may cover the bottom and sidewalls of the trench U, and is located between the reflective structure 17 and the light-emitting device 11 and the first electrode 14. By providing the insulating dielectric layer 18, when the reflective structure 17 includes a metallic material, the reflective structure 17 can be kept insulated from the light-emitting device 11 and the first electrode 14.

[0068] In one possible implementation, the insulating dielectric layer 18 may include a light-transmitting insulating material. For example, the insulating dielectric layer 18 may include, but is not limited to, organic transparent insulating materials such as polymethyl methacrylate, polyester, polycarbonate, polystyrene, polyimide, and silicone resin. Alternatively, the insulating dielectric layer 18 may include, but is not limited to, inorganic transparent materials such as silicon oxide, titanium oxide, aluminum nitride, aluminum oxide, silicon nitride, zirconium oxide, magnesium fluoride, tantalum oxide, and silicon carbide. The specific materials may be selected according to actual needs and are not specifically limited here.

[0069] In another possible implementation, the insulating dielectric layer 18 may also comprise an insulating material with reflective properties. For example, the insulating dielectric layer 18 may comprise a polyimide (PI), a white adhesive, or other materials with reflective properties. The insulating dielectric layer 18 may be a single-layer structure, or it may be a Bragg reflective structure composed of multiple reflective films.

[0070] Furthermore, the insulating dielectric layer 18 covers the sides of the light-emitting device 11 and the first electrode 14, preventing charge carriers provided by the first electrode 14 and the second electrode 15 from moving along the sides of the light-emitting device 11 and recombinating to emit light on the sides of the light-emitting device 11. In a specific implementation, the insulating dielectric layer 18 can extend to the edge of the surface of the light-emitting device 11 facing away from the substrate 10, that is, the insulating dielectric layer 18 can cover the edge of the second semiconductor layer 112, which can improve the insulation effect of the insulating dielectric layer 18 and more effectively prevent charge carriers from recombinating to emit light on the sides of the light-emitting device 11. Moreover, when the insulating dielectric layer 18 has reflective properties, it can also reflect the oblique light emitted from the light-emitting device 11 back into the interior, allowing more light to be emitted in a direction perpendicular to the substrate 10, thereby improving the collimation of the light emitted from the light-emitting chip. In a specific configuration, the projection of the insulating dielectric layer 18 onto the substrate 10 is within the range of the projection of the second electrode 15 onto the substrate 10. Thus, a portion of the second electrode 15 covers the insulating dielectric layer 18, and a portion covers the surface of the second semiconductor layer 112, thereby maintaining an electrical connection between the second electrode 15 and the second semiconductor layer 112.

[0071] In this embodiment, by providing a light-absorbing structure 13 between adjacent light-emitting devices 11, the collimation of the light emitted from the light-emitting chip can be improved. This eliminates the need for a collimation structure in the light-emitting chip, thereby reducing the spacing between adjacent light-emitting devices 11 and increasing the density of light-emitting devices 11 in the chip. The multiple light-emitting devices 11 in this embodiment can be arranged in an array. The arrangement of the light-emitting devices 11 in this embodiment will be described below with reference to the accompanying drawings.

[0072] Figure 7 This is a schematic diagram of the arrangement of light-emitting devices in an embodiment of this application, as shown below. Figure 7 As shown, in some embodiments of this application, the multiple light-emitting devices 11 in the light-emitting chip can be divided into multiple light-emitting device groups 11m. Each light-emitting device group 11m may include multiple light-emitting devices 11 arranged along a first direction F1, and each light-emitting device group 11m is arranged along a second direction F2. The first direction F1 and the second direction F2 are parallel to the surface of the substrate, and the first direction F1 and the second direction F2 are perpendicular to each other. The light-emitting devices 11 in two adjacent light-emitting device groups 11m are staggered by a first distance D1, which is smaller than the distance D2 between two adjacent light-emitting devices 11 in the light-emitting device group 11m. This arrangement of the light-emitting devices 11 resembles the facets of a face-centered cubic (FCC) lattice structure, allowing for a more compact arrangement of the light-emitting devices 11. The light-absorbing structure 13 is a mesh structure filling the gaps between the light-emitting devices 11.

[0073] Figure 8This is another schematic diagram of the arrangement of light-emitting devices in an embodiment of this application, as shown below. Figure 8 As shown, in some other embodiments of this application, the plurality of light-emitting devices 11 in the light-emitting chip can be arranged in an array along a first direction F1 and a second direction F2; wherein, the first direction F1 and the second direction F2 are parallel to the surface of the substrate 10, and the first direction F1 and the second direction F2 are perpendicular to each other. The light-absorbing structure 13 may include: a plurality of first light-absorbing strips 131 and a plurality of second light-absorbing strips 132, each first light-absorbing strip 131 extending along the first direction F1 and arranged along the second direction F2, and each second light-absorbing strip 132 extending along the second direction F2 and arranged along the first direction F1. The plurality of first light-absorbing strips 131 and the plurality of second light-absorbing strips 132 in the light-absorbing structure 13 are interconnected, so that the light-absorbing structure 13 has a grid-like structure. With this configuration, the arrangement of the plurality of light-emitting devices 11 in the light-emitting chip is relatively compact, and the density of the light-emitting devices 11 is high. In specific implementation, the size of the light-emitting devices 11 and the spacing between adjacent light-emitting devices 11 can be reasonably set according to actual needs.

[0074] Figure 7 Taking the circular cross-sectional shape of the light-emitting device 11 as an example, Figure 8 Taking the square cross-sectional shape of the light-emitting device 11 as an example, in specific settings, the cross-sectional shape of the light-emitting device 11 can also be elliptical, rectangular, polygonal, etc., and can be set according to actual needs. There is no limitation here.

[0075] In the embodiments of this application, Figure 7 and Figure 8 For example, the arrangement of the light-emitting device 11 in the embodiment of this application is illustrated. In specific implementation, the arrangement of the light-emitting device 11 in the light-emitting chip can be reasonably set according to actual needs, and no limitation is made here.

[0076] Based on the same technical concept, this application also provides a display module. The display module in this application embodiment may include a display panel and any of the aforementioned light-emitting chips. The light-emitting chip is located on the light-incident side of the display panel and is used to provide a backlight to the display panel. Because the density of light-emitting devices in the light-emitting chip provided in this application embodiment is high, the light-emitting chip has good light emission performance, which can provide a backlight of suitable brightness for the display panel and improve the display effect of the display module. In specific implementations, the light-emitting chip in this application embodiment may include one or more light-emitting devices of different colors. The light-emitting devices can cooperate with structures such as quantum dot (QD) color filters, color filters, and photoluminescent (QDCC) color filters in the display panel to achieve a full-color display effect.

[0077] Based on the same technical concept, embodiments of this application also provide an electronic device.

[0078] In one possible implementation, the electronic device in this application embodiment may include: any of the above-mentioned light-emitting chips and a circuit board, with the light-emitting chip electrically connected to the circuit board. The light-emitting chip in this application embodiment can be applied in the display field, serving as a direct display screen, and displaying images under the control of the circuit board. In specific implementations, the light-emitting chip may include one or more color light-emitting devices, which can be combined with structures such as quantum dot (QD) color filters, color filters, and photoluminescent (QDCC) color filters to achieve a full-color display effect. Because the density of light-emitting devices in the light-emitting chip provided in this application embodiment is high, the electronic device including the above-mentioned light-emitting chip has a better display effect. Alternatively, the light-emitting chip in this application embodiment can be applied in the lighting field, serving as a light source, emitting light of a certain brightness under the control of the circuit board, and achieving pixelated control of the lighting area. Because the density of light-emitting devices in the light-emitting chip provided in this application embodiment is high, the electronic device including the above-mentioned light-emitting chip has a better lighting effect.

[0079] In another possible implementation, the electronic device in this application embodiment may include: the aforementioned display module and a circuit board, with the display module electrically connected to the circuit board. That is, the light-emitting chip in this application embodiment can be applied in the field of display technology, and the light-emitting chip can serve as a backlight in the display module. Because the density of light-emitting devices in the light-emitting chip provided in this application embodiment is high, the electronic device including the aforementioned light-emitting chip has a better display effect.

[0080] Although preferred embodiments of this application have been described, those skilled in the art, upon learning the basic inventive concept, can make other changes and modifications to these embodiments. Therefore, the appended claims are intended to be interpreted as including the preferred embodiments as well as all changes and modifications falling within the scope of this application.

[0081] Obviously, those skilled in the art can make various modifications and variations to the embodiments of this application without departing from the spirit and scope of the embodiments of this application. Therefore, if these modifications and variations to the embodiments of this application fall within the scope of the claims of this application and their equivalents, this application also intends to include these modifications and variations.

Claims

1. A light-emitting chip, characterized in that, include: Substrate; Multiple light-emitting devices are disposed separately on the substrate, and trenches are provided between adjacent light-emitting devices; A light-absorbing structure is located on the side of the trench away from the substrate, and the light-absorbing structure is located between adjacent light-emitting devices.

2. The light-emitting chip as described in claim 1, characterized in that, Each of the light-emitting devices includes: a first semiconductor layer, a second semiconductor layer, and an active layer; The active layer is located between the first semiconductor layer and the second semiconductor layer, and the first semiconductor layer is located between the substrate and the active layer; In the same light-emitting device, the edges of the first semiconductor layer, the active layer and the second semiconductor layer are flush, and the angle between the sidewall of the light-emitting device and the surface of the substrate is in the range of 80° to 90°.

3. The light-emitting chip as described in claim 2, characterized in that, The light-emitting chip further includes: multiple first electrodes and a second electrode; The positions of the plurality of first electrodes correspond to the positions of the plurality of light-emitting devices, and adjacent first electrodes are separated by the trench; each first electrode is located between the light-emitting device and the substrate at the corresponding position, and the first electrode is in contact with the first semiconductor layer in the light-emitting device at the corresponding position. The second electrode is located between the trench and the light-absorbing structure, and the second electrode is in contact with the second semiconductor layer in each of the light-emitting devices.

4. The light-emitting chip as described in claim 3, characterized in that, The light-emitting chip also includes: multiple light-transmitting structures; The positions of the plurality of light-transmitting structures correspond to the positions of the plurality of light-emitting devices, and each light-transmitting structure is located on the side of the light-emitting device opposite to the substrate at the corresponding position, and the light-transmitting structure is located outside the second electrode; The light-transmitting structure is in contact with the second semiconductor layer of the light-emitting device at the corresponding position; The refractive index of the light-transmitting structure is less than that of the second semiconductor layer, and the refractive index of the light-transmitting structure is greater than that of air.

5. The light-emitting chip as described in claim 3 or 4, characterized in that, The light-emitting chip further includes: a filling structure located within the trench; The filling structure comprises an insulating reflective material; or, the filling structure comprises a metallic material.

6. The light-emitting chip as described in claim 5, characterized in that, The light-emitting chip further includes: an insulating dielectric layer; The insulating dielectric layer covers the bottom and sidewalls of the trench, and the insulating dielectric layer is located between the reflective structure, the light-emitting device, and the first electrode.

7. The light-emitting chip according to any one of claims 1 to 6, characterized in that, The plurality of light-emitting devices are arranged in an array along a first direction and a second direction; wherein the first direction and the second direction are parallel to the surface of the substrate, and the first direction and the second direction are perpendicular to each other; The light-absorbing structure includes: a plurality of first light-absorbing strips and a plurality of second light-absorbing strips; the plurality of first light-absorbing strips extend along the first direction and are arranged along the second direction, and the plurality of second light-absorbing strips extend along the second direction and are arranged along the first direction.

8. The light-emitting chip according to any one of claims 1 to 6, characterized in that, The plurality of light-emitting devices are divided into a plurality of light-emitting device groups, each of the light-emitting device groups including a plurality of light-emitting devices arranged along a first direction, and the plurality of light-emitting device groups are arranged along a second direction; wherein, the first direction and the second direction are parallel to the surface of the substrate, and the first direction and the second direction are perpendicular to each other; The light-emitting devices in two adjacent light-emitting device groups are staggered by a first distance, which is less than the distance between two adjacent light-emitting devices in the light-emitting device group.

9. A display module, characterized in that, include: The display panel, and the light-emitting chip as described in any one of claims 1 to 8; The light-emitting chip is located on the light-incident side of the display panel, and the light-emitting chip is used to provide a backlight to the display panel.

10. An electronic device, characterized in that, The electronic device includes: a light-emitting chip as described in any one of claims 1 to 8, and a circuit board, wherein the light-emitting chip is electrically connected to the circuit board; Alternatively, the electronic device may include: a display module as described in claim 9, and a circuit board, wherein the display module is electrically connected to the circuit board.

Images