Design method for rapidly preparing large-area microwire with polarized electro-synapse characteristic based on soaking method

Abstract

The invention belongs to the technical field of semiconductors, and particularly relates to a design method for rapidly preparing a large-area microwire with polarized electro-synapse characteristics based on an immersion method. The method specifically comprises the steps that an electrode layer is formed on a substrate, and the electrode layer comprises two base parts and two interdigital units which are arranged in a crossed mode; preparing a perovskite micron wire layer based on a soaking method, and covering the plurality of interdigitals of the two interdigital units with the perovskite micron wire layer; when a soaking method is used for preparation, triple driving forces of capillary force, hydrostatic pressure and evaporation induction flow are introduced to promote a perovskite precursor solution to rapidly and uniformly fill a micro-channel area, the capillary force is an early-stage main driving force, the hydrostatic pressure is an auxiliary driving force, and the evaporation induction is used as a later-stage driving force.

Description

Technical Field

[0001] This invention belongs to the field of semiconductor technology, specifically relating to a design method for rapidly preparing large-area micron-sized wires with polarized photoelectric synaptic properties based on an immersion method. Background Technology

[0002] With the rapid development of technology and the explosive growth of information data, traditional computing systems based on the von Neumann architecture have gradually revealed the bottlenecks brought about by the "separation of storage and computation." Frequent data interactions between the central processing unit and storage units not only limit the system's response speed but also significantly increase energy consumption. Inspired by the neural networks of the human brain, neuromorphic computing, due to its high efficiency and low power consumption in perception, learning, and memory, has become an important development direction for the next generation of intelligent information processing.

[0003] Synapses are the core components connecting sensory input and neural network processing. To more realistically simulate the entire process of human brain perception and processing, there is an urgent need to develop optoelectronic synaptic devices capable of simultaneously sensing external stimuli and processing information. Perovskite materials, due to their excellent optoelectronic properties (such as high light absorption coefficient, long carrier diffusion distance, and low toxicity), are widely used in the construction of synaptic devices. In recent years, perovskite-based optoelectronic synaptic devices have made significant progress in image perception and neural simulation.

[0004] However, most perovskite synaptic devices currently rely primarily on analog light intensity signals, limiting their ability to capture optical information such as polarization. This limitation restricts the device's target recognition capabilities in complex environments. Therefore, perovskite opto-synaptic devices with polarization response characteristics have become a research hotspot, enabling the capture of multi-dimensional information such as object shape, material properties, and surface structure, significantly improving the recognition accuracy of neuromorphic vision systems.

[0005] Currently, the mainstream fabrication methods for perovskite microwires mostly rely on microchannel confinement growth mechanisms, which depend on capillary forces to gradually fill the microchannels. However, these methods result in slow growth rates and long device fabrication cycles, hindering rapid development and efficient applications. Especially in large-area fabrication, uneven solution filling and fluctuations in crystallization conditions often lead to poor uniformity in microwire growth, significantly limiting its industrial and commercial application. Therefore, the following technical problems need to be addressed: 1. Low preparation efficiency and slow growth process: The preparation of traditional perovskite microwires mainly relies on the microchannel confinement method. This method is dominated by capillary force, with a slow filling speed and a time-consuming crystal growth process, resulting in a long preparation cycle.

[0006] 2. Difficulty in achieving large-area, highly uniform fabrication, affecting device uniformity and commercial potential: Due to factors such as uneven microchannel liquid filling and unstable crystal morphology in existing fabrication processes, the obtained micron-wire structures exhibit fluctuations in size, orientation, and photoelectric properties, limiting the reproducibility and stability of device performance and making it difficult to meet the requirements for large-area, batch, and uniform fabrication in practical commercial applications.

[0007] To address the aforementioned challenges, there is an urgent need to develop a simple, efficient, and large-area-compatible novel method for constructing micron-scale linear arrays to advance the practical application of polarized optoelectronic synaptic devices. Summary of the Invention

[0008] In view of this, the present invention provides a design method for rapidly preparing large-area micron-wires with polarized photoelectric synaptic properties based on an immersion method. This method utilizes the synergistic mechanism of capillary force, hydrostatic pressure, and evaporation-induced flow to enable the precursor solution to rapidly and uniformly fill the microchannel and orderly crystallize between the interdigitated electrodes to form a micron-wire array structure.

[0009] The technical solution for implementing the present invention is as follows: In a first aspect, the present invention provides a method for rapidly preparing large-area micron-wires with polarized photoelectric synaptic properties based on an immersion method, the specific process of which is as follows: An electrode layer is formed on a substrate, the electrode layer comprising two bases and two interdigitated interdigitated units; perovskite microwires are prepared by an immersion method to cover multiple interdigitated fingers of the two interdigitated units; When preparing perovskite precursors using the immersion method, a triple driving force of capillary force, hydrostatic pressure, and evaporation-induced flow is introduced to promote the rapid and uniform filling of the microchannel region by the perovskite precursor solution. Among them, capillary force is the main driving force in the early stage, hydrostatic pressure is the auxiliary driving force, and evaporation-induced flow is the driving force in the later stage.

[0010] Optionally, the capillary force described in this invention is the primary driving force in the early stage. When the precursor initially contacts the bottom microchannel inlet, the interfacial tension between the channel wall and the liquid generates capillary adsorption, causing the solution to be gradually drawn in along the microchannel, forming a preliminary liquid film that fills the channel. Hydrostatic pressure serves as a stabilizing auxiliary driving force. During the soaking process, the liquid level difference of the solution or the application of a small external pressure introduces a hydrostatic pressure difference. Evaporation-induced flow serves as the later driving force. Local liquid flow is formed at the liquid-gas interface. This flow pulls the solution from the channel inlet to the distal end, strengthening the directional crystallization tendency along the channel direction. Under the spatial confinement of the microchannel, the crystal achieves ordered crystallization along the axial direction, ultimately rapidly forming a continuous, oriented, and well-defined single-crystal micron-line array structure.

[0011] Optionally, the material of the micron wires described in this invention is a one-dimensional CsCu2I3 perovskite material.

[0012] Optionally, the specific process for preparing CsCu2I3 perovskite microwires based on the immersion method described in this invention is as follows: A layer of polydimethylsiloxane (PDMS) with microchannels is coated on a substrate and slowly placed into a transparent container filled with a CsCu2I3 precursor solution, so that the bottom of the PDMS-coated substrate is immersed in the precursor solution and the top is above the liquid surface. The triple driving forces of capillary force, hydrostatic pressure and evaporation-induced flow are introduced. After the CsCu2I3 solution fills the entire microchannel area, the device is removed and placed on an annealing stage for heat treatment. Finally, the top PDMS is peeled off.

[0013] Optionally, the specific process for preparing CsCu2I3 perovskite microwires based on the immersion method described in this invention is as follows: First, 0.2598 g of cesium iodide powder and 0.38 g of cuprous iodide powder were mixed and dissolved in a 1:1 mixture of dimethyl sulfoxide and dimethylformamide in a 2 mL volume; the mixture was stirred at room temperature for 12 hours to form a CsCu2I3 solution; and the prepared CsCu2I3 solution was placed in an argon-protected glove box. Secondly, a layer of polydimethylsiloxane PDMS with microchannels was coated on the substrate and then transferred to a glove box; Next, the substrate covered with PDMS microchannels was slowly placed into a transparent container containing CsCu2I3 precursor solution, so that the bottom end of the PDMS substrate was immersed in the precursor solution, while the other end remained above the liquid surface. After standing for a few minutes, the precursor solution gradually filled the entire microchannel area under the triple driving force of capillary force, hydrostatic pressure and evaporation-induced flow. Finally, the substrate filled with CsCu2I3 solution was placed on a 60°C annealing stage and heated for 15 minutes, after which the top PDMS was peeled off.

[0014] Secondly, the present invention provides a method for fabricating a polarized photoelectric synaptic device based on an immersion method, the method comprising the following steps: S1: Select a substrate and clean it; S2: Using photolithography, a symmetrical electrode layer is prepared on a substrate. The electrode layer includes two bases and two interdigital units. The two bases are arranged opposite to each other, and the two interdigital units are respectively connected to the two bases. The interdigitals on the two interdigital units extend towards each other and are insulated from each other. S3: Cover the substrate with a layer of polydimethylsiloxane (PDMS) with microchannels, and slowly place it into a transparent container filled with CsCu2I3 precursor solution, so that the bottom of the PDMS substrate is immersed in the precursor solution and the top is above the liquid surface. Introduce capillary force, hydrostatic pressure and evaporation-induced flow as triple driving forces. After the CsCu2I3 solution fills the entire microchannel area, remove the device and place it on an annealing stage for heat treatment. Finally, peel off the top PDMS.

[0015] Optionally, the cleaning process of the present invention is as follows: the prepared substrate is placed in acetone, ethanol and deionized water for ultrasonic cleaning for 10 minutes each, and then dried with high-purity nitrogen gas to complete the first cleaning treatment, so as to remove impurities and oil stains; and the substrate is placed in a glass culture dish and cleaned with a plasma machine for 10 minutes to complete the second cleaning treatment, so as to make the substrate surface more hydrophilic and help the solution spread and form a film. The gas used for cleaning can be oxygen.

[0016] Optionally, step S3 of the present invention specifically involves the following process: First, 0.2598 g of cesium iodide powder and 0.38 g of cuprous iodide powder were mixed and dissolved in a 1:1 mixture of dimethyl sulfoxide and dimethylformamide in a 2 mL volume; the mixture was stirred at room temperature for 12 hours to form a CsCu2I3 solution; and the prepared CsCu2I3 solution was placed in an argon-protected glove box. Secondly, a layer of polydimethylsiloxane PDMS with microchannels was coated on the substrate and then transferred to a glove box; Next, the substrate covered with PDMS microchannels was slowly placed into a transparent container containing CsCu2I3 precursor solution, so that the bottom end of the PDMS substrate was immersed in the precursor solution, while the other end remained above the liquid surface. After standing for a few minutes, the precursor solution gradually filled the entire microchannel area under the triple driving force of capillary force, hydrostatic pressure and evaporation-induced flow. Finally, the substrate filled with CsCu2I3 solution was placed on a 60°C annealing stage and heated for 15 minutes, after which the top PDMS was peeled off.

[0017] Optionally, the substrate described in this invention can be a Si / SiO2 or PET substrate, and the substrate can be cut to a size of 1.8 cm × 1.8 cm.

[0018] Optionally, the interdigital unit of the present invention is made of gold.

[0019] Beneficial effects: This invention utilizes the synergistic mechanism of capillary force, hydrostatic pressure, and evaporation-induced flow to enable the precursor solution to rapidly and uniformly fill microchannels and crystallize orderly between interdigitated electrodes to form a micron-scale linear array structure. This method offers advantages such as simple process, fast crystallization rate, and high structural uniformity, effectively improving the scalability and mass production feasibility of synaptic devices, and possesses promising prospects for commercial application. Attached Figure Description

[0020] To more clearly illustrate the technical solutions of the embodiments of the present invention, the drawings used in the embodiments will be briefly introduced below. Obviously, the drawings described below are only some embodiments of the present invention. For those skilled in the art, other drawings can be obtained based on these drawings without creative effort.

[0021] Figure 1 This is a simplified top view of a single micrometer wire device according to an illustrative embodiment of the present disclosure; Figure 2 yes Figure 1 The diagram shows a micron-wire synaptic device fabricated by an immersion method. Figure 3 (a) is based on Figure 2 The image shows a top view of the micron-sized wires prepared by the immersion method under an optical microscope. Figure 3 (b) is a cross-sectional view of the micrometer wire under an electron microscope; Figure 4 It is based on Figure 2 An optical microscope image of a large-area micron-sized wire prepared by the immersion method shown. Figure 5 (a) is Figure 1 The figure shows the postsynaptic current curves of the micron-wire synaptic device under different illumination times. Figure 5 (b) shows the postsynaptic current curves corresponding to 30 consecutive pulse stimuli (one cycle of illumination time is 0.5 seconds); Figure 6 yes Figure 1 The figure shows the postsynaptic current curves of the micron-wire synaptic device under multi-pulse stimulation at polarization angles from 0 to 360 degrees. Detailed Implementation

[0022] The embodiments of the present invention will now be described in detail with reference to the accompanying drawings.

[0023] It should be noted that, in the absence of conflict, the following embodiments and features can be combined with each other; and, based on the embodiments of this disclosure, all other embodiments obtained by those skilled in the art without creative effort are within the scope of protection of this disclosure.

[0024] It should be noted that various aspects of embodiments within the scope of the appended claims are described below. It will be apparent that the aspects described herein can be embodied in a wide variety of forms, and any particular structure and / or function described herein is merely illustrative. Based on this disclosure, those skilled in the art will understand that one aspect described herein can be implemented independently of any other aspect, and two or more of these aspects can be combined in various ways. For example, any number of aspects set forth herein can be used to implement the device and / or practice the method. Additionally, this device and / or method can be implemented using structures and / or functionalities other than one or more of the aspects set forth herein.

[0025] This embodiment provides a method for rapidly preparing large-area micron-sized wires with polarized photoelectric synaptic properties based on an immersion method. The specific process is as follows: An electrode layer is formed on a substrate, the electrode layer comprising two bases and two interdigitated units; perovskite microwires are fabricated using an immersion method, covering multiple interdigitations of the two interdigitated units, such as... Figure 1 As shown; When preparing perovskite precursors using the immersion method, a triple driving force of capillary force, hydrostatic pressure, and evaporation-induced flow is introduced to promote the rapid and uniform filling of the microchannel region by the perovskite precursor solution. Among them, capillary force is the main driving force in the early stage, hydrostatic pressure is the auxiliary driving force, and evaporation-induced flow is the driving force in the later stage.

[0026] In this specific implementation, an electrode layer 2 is formed on a substrate 1. The electrode layer 2 includes two bases and two interdigital units. The two bases are arranged opposite to each other, and the two interdigital units are respectively connected to the two bases. The interdigitates on the two interdigital units extend towards each other and are mutually insulated. The two interdigital units are symmetrical structures with the same interdigitate width. The microwire 3 is a perovskite material, prepared by an immersion method, and covers multiple interdigitates on the two interdigital units. When prepared by the immersion method, a triple driving force of capillary force, hydrostatic pressure, and evaporation-induced flow is introduced to promote the rapid and uniform filling of the microchannel region by the perovskite precursor solution. Among them, capillary force is the main driving force in the early stage, hydrostatic pressure is the auxiliary driving force, and evaporation-induced flow is the driving force in the later stage.

[0027] When the beam of light under test irradiates the synaptic device, electron-hole pairs are generated in the micron-wires. Under the influence of an applied electric field, the charge carriers drift, and the defect states in the micron-wires (3) of the perovskite material capture some of the photogenerated electrons, exhibiting synaptic characteristics. With increasing illumination time, the device exhibits a transition from short-term to long-term plasticity. Furthermore, based on the structural anisotropy of perovskite materials, changing the direction of linearly polarized light will correspondingly alter the postsynaptic current value, demonstrating excellent polarization-sensitive detection capabilities in the synaptic device.

[0028] In one exemplary embodiment, the interdigitated units are made of gold; the microwires 3 are made of quasi-one-dimensional CsCu₂I₃ perovskite material. A triple driving force—capillary force, hydrostatic pressure, and evaporation-induced flow—is introduced using an immersion method, prompting the CsCu₂I₃ precursor solution to rapidly and uniformly fill the microchannel region, significantly improving the growth rate of the perovskite microwires. Specifically: Capillary force is the main driving force in the first stage. When the precursor initially contacts the bottom microchannel inlet, the interfacial tension between the channel wall and the liquid generates capillary adsorption, causing the solution to be gradually drawn in along the microchannel and forming a preliminary liquid film that fills the channel. Hydrostatic pressure serves as a stabilizing auxiliary driving force. During the soaking process, the difference in liquid level or the application of a small external pressure can introduce a hydrostatic pressure difference, which overcomes the weakening trend of capillary flow in deeper channels, allowing the fluid to continue filling the microchannels, thereby improving the filling depth and uniformity. Evaporation-induced flow serves as the driving force in the later stages. As the solvent gradually evaporates, localized liquid flow (i.e., "evaporation-induced flow") forms at the liquid-gas interface. This flow pulls the solution from the inlet of the channel to the distal end, strengthening the directional crystallization tendency along the channel direction. Under the spatial confinement of the microchannel, the crystal achieves ordered crystallization along the axial direction, ultimately rapidly forming a continuous, uniformly oriented, and well-defined single-crystal micron-line array structure.

[0029] The effective coordination of these three driving forces significantly improves the growth rate of perovskite microwires and greatly shortens the device fabrication cycle. It overcomes the problems of slow growth, uneven crystal morphology, and poor consistency of large-area arrays caused by the traditional microchannel confinement method which relies on capillary force for gradual filling, and achieves the fabrication of microwire arrays with high uniformity and high repeatability.

[0030] like Figure 2 As shown, it illustrates the specific process of constructing microwires by the immersion method. The specific process of constructing microwires by the immersion method includes template preparation, precursor solution immersion, and annealing crystallization steps. Specifically, a layer of polydimethylsiloxane (PDMS) with microchannels is coated on the substrate. The substrate is slowly placed into a transparent container filled with CsCu2I3 precursor solution, so that the bottom end of the PDMS substrate is immersed in the precursor solution and the top end is placed above the liquid surface. The triple driving force of capillary force, hydrostatic pressure, and evaporation-induced flow is introduced. After the CsCu2I3 solution fills the entire microchannel area, the device is taken out and placed on an annealing stage for heat treatment. Finally, the top PDMS is peeled off.

[0031] like Figure 3-4The surface morphology of the large-area perovskite microwire array is characterized by its regular overall arrangement, smooth surface, low roughness, and single-line width of approximately 5 micrometers, exhibiting excellent crystal quality. This process incorporates a triple synergistic mechanism of capillary force, hydrostatic pressure, and evaporation-induced flow, significantly improving solution filling efficiency and crystal nucleation rate. Capillary force rapidly draws liquid into the microchannels, hydrostatic pressure continuously propels internal filling, and evaporation-induced flow forms internal flow during volatilization, inducing solute to directionally deposit and grow towards the crystal nucleus. This synergistic effect of the three mechanisms not only significantly shortens the preparation cycle but also improves the orientation consistency, size uniformity, and reproducibility of the microwires, overcoming the technical challenges of slow growth and poor reproducibility in large-area preparation using traditional confined methods.

[0032] Another embodiment of this application includes the process of preparing CsCu2I3 solution and constructing microwires by immersion method, as detailed below: First, 0.2598 g of cesium iodide powder and 0.38 g of cuprous iodide powder were mixed and dissolved in a 1:1 mixture of dimethyl sulfoxide and dimethylformamide in a 2 mL volume; the mixture was stirred at room temperature for 12 hours to form a CsCu2I3 solution; and the prepared CsCu2I3 solution was placed in an argon-protected glove box. Secondly, a layer of polydimethylsiloxane PDMS with microchannels was coated on the substrate and then transferred to a glove box; Next, the substrate covered with PDMS microchannels was slowly placed into a transparent container containing CsCu2I3 precursor solution, so that the bottom end of the PDMS substrate was immersed in the precursor solution, while the other end remained above the liquid surface. After standing for a few minutes, the precursor solution gradually filled the entire microchannel area under the triple driving force of capillary force, hydrostatic pressure and evaporation-induced flow. Finally, the substrate filled with CsCu2I3 solution was placed on a 60°C annealing stage and heated for 15 minutes, after which the top PDMS was peeled off.

[0033] According to another embodiment of this disclosure, a method for fabricating a synaptic device is also provided, the method comprising the following steps: S1: Select a substrate and clean it; S2: Using photolithography, a symmetrical electrode layer is prepared on a substrate. The electrode layer includes two bases and two interdigital units. The two bases are arranged opposite to each other, and the two interdigital units are respectively connected to the two bases. The interdigitals on the two interdigital units extend towards each other and are insulated from each other. S3: Cover the substrate with a layer of polydimethylsiloxane (PDMS) with microchannels, and slowly place it into a transparent container filled with CsCu2I3 precursor solution, so that the bottom of the PDMS substrate is immersed in the precursor solution and the top is above the liquid surface. Introduce capillary force, hydrostatic pressure and evaporation-induced flow as triple driving forces. After the CsCu2I3 solution fills the entire microchannel area, remove the device and place it on an annealing stage for heat treatment. Finally, peel off the top PDMS.

[0034] In some embodiments of this disclosure, step S1 of selecting a substrate includes: Step 1: Take a substrate 1, such as a Si / SiO2 or PET substrate, and cut the substrate 1 to a size of 1.8 cm × 1.8 cm; Step 2: Place the prepared substrate 1 in acetone, ethanol and deionized water in sequence for ultrasonic cleaning for 10 minutes each, and then dry it with high-purity nitrogen gas for later use to complete the first cleaning treatment and achieve the effect of removing impurities and oil stains. Step 3: Place the substrate 1 in a glass culture dish and clean it with a plasma machine for 10 minutes to complete the second cleaning treatment, making the surface of substrate 1 more hydrophilic, which helps the solution spread and form a film. Oxygen can be selected as the gas used for cleaning.

[0035] In some embodiments of this disclosure, step S2, which involves fabricating the electrode layer 2 on the substrate, includes: Step 4: On substrate 1 after the first and second cleaning processes, a symmetrical electrode layer 2 is photolithographically patterned using photolithography. (Example:...) Figure 1 As shown, the process for fabricating electrode layer 2 includes photolithography of a first base 211 and interdigital units 221, a second base 212 and interdigital units 222. Multiple interdigits of the two interdigital units extend towards each other and are mutually insulated, with a photolithographic spacing of 10 micrometers between each interdigital unit. Gold can be used as the material for the interdigital units.

[0036] In some embodiments of this disclosure, step S3, which involves fabricating micron-wires 3 on the interdigitated units, includes: Step 5: Prepare CsCu2I3 solution. Mix 0.2598 g of cesium iodide powder and 0.38 g of cuprous iodide powder in a 1:1 mixture of dimethyl sulfoxide and dimethylformamide in a 2 mL volume. Stir at room temperature for 12 hours to form CsCu2I3 solution. Place the prepared CsCu2I3 solution in an argon-protected glove box.

[0037] Step 6: Coat the substrate with a layer of polydimethylsiloxane (PDMS) containing microchannels, then transfer it to a glove box. Next, slowly place the substrate coated with PDMS microchannels into a transparent container filled with a CsCu₂I₃ precursor solution, ensuring the bottom of the PDMS-coated substrate is submerged in the precursor solution while the other end remains above the liquid surface. Let it stand for fifteen minutes (the exact time can be adjusted according to the microchannel size). Under the combined driving forces of capillary force, hydrostatic pressure, and evaporation-induced flow, the precursor solution gradually fills the entire microchannel region. Finally, place the substrate filled with CsCu₂I₃ solution on a 60°C annealing stage and heat for fifteen minutes, then peel off the top PDMS.

[0038] The polarized synaptic device prepared based on the above embodiments is as follows: Figure 1 As shown, Electrode layer 2 includes two bases and two interdigital units, labeled as first base 211, second base 212, first interdigital unit 221, and second interdigital unit 222, respectively. First base 211 and second base 212 are disposed opposite to each other. First base 211 is integrally connected to first interdigital unit 221, and second base 212 is integrally connected to second interdigital unit 222. The interdigitates of first interdigital unit 221 and second interdigital unit 222 extend towards each other but do not extend to the opposing bases. The interdigitates of first interdigital unit 221 and second interdigital unit 222 are isolated from each other, meaning that interdigitates belonging to different interdigital units are in an insulated state. In this embodiment, the CsCu2I3 microwire 3 covers multiple interdigital units and the interdigital units 221 and 222. After covering the interdigital units 221 and 222, the mutually isolated first interdigital units 221 and 222 are connected by the microwire, and the synaptic device forms an electrode layer 2-microwire 3-electrode layer 2 (MSM) pattern.

[0039] Figure 5 (a) is Figure 1 The diagram shows the postsynaptic current curves of the synaptic device under different illumination times. Figure 5 (b) is the response curve corresponding to 30 consecutive pulse stimuli (each pulse illumination time is 0.5 seconds). In some embodiments, as the illumination time and the number of pulses increase, the postsynaptic current of the device continues to rise, exhibiting significant synaptic plasticity characteristics, simulating the process of synaptic enhancement in biological neurons.

[0040] Figure 6 yes Figure 1The micron-wire synaptic device is shown to exhibit multi-pulse stimulation synaptic response curves at different polarization angles from 0° to 360°. The device demonstrates a clear sensitivity to polarization direction, with the synaptic current reaching its maximum at 0°, 180°, and 360°. The synaptic device fabricated using the above method connects mutually insulated electrode layers 2 via micron-wires 3, giving the synaptic device polarization properties. When the illumination wavelength is 320 nm and the optical power is 0.82 mW / cm², the device exhibits significant synaptic response behavior, with the postsynaptic current continuously increasing with illumination time, demonstrating delayed response and long memory effects. Furthermore, the device's dichroism ratio is 1.1 (optical power 0.12 mW / cm²), indicating that the synaptic device possesses polarization-sensitive detection capabilities, which can be used to improve the identification of target objects and enhance the dimensionality and richness of the acquired information.

[0041] In summary, the above are merely preferred embodiments of the present invention and are not intended to limit the scope of protection of the present invention. Any modifications, equivalent substitutions, improvements, etc., made within the spirit and principles of the present invention should be included within the scope of protection of the present invention.

Claims

1. A method for rapidly preparing large-area micron-sized wires with polarized photoelectric synaptic properties based on an immersion method, characterized in that, The specific process is as follows: An electrode layer is formed on a substrate, the electrode layer comprising two bases and two interdigitated interdigitated units; perovskite microwires are prepared by an immersion method to cover multiple interdigitated fingers of the two interdigitated units; When preparing perovskite precursors using the immersion method, a triple driving force of capillary force, hydrostatic pressure, and evaporation-induced flow is introduced to promote the rapid and uniform filling of the microchannel region by the perovskite precursor solution. Among them, capillary force is the main driving force in the early stage, hydrostatic pressure is the auxiliary driving force, and evaporation-induced flow is the driving force in the later stage.

2. The method for rapidly preparing large-area micron-sized wires with polarized photoelectric synaptic properties based on the immersion method according to claim 1, characterized in that, The capillary force is the primary driving force in the early stage. When the precursor initially contacts the bottom microchannel inlet, the interfacial tension between the channel wall and the liquid generates capillary adsorption, causing the solution to be gradually drawn in along the microchannel, forming a preliminary liquid film that fills the channel. The hydrostatic pressure serves as a stabilizing auxiliary driving force. During the soaking process, the liquid level difference or the application of a small external pressure introduces a hydrostatic pressure difference. The evaporation-induced flow serves as the later driving force. Local liquid flow is formed at the liquid-gas interface. This flow pulls the solution from the channel inlet to the distal end, strengthening the directional crystallization tendency along the channel direction. Under the spatial confinement of the microchannel, the crystal achieves ordered crystallization along the axial direction, ultimately rapidly forming a continuous, oriented, and well-defined single-crystal micron-line array structure.

3. The method for rapidly preparing large-area micron-sized wires with polarized photoelectric synaptic properties based on the immersion method according to claim 2, characterized in that, The material used for the microwires is a one-dimensional CsCu2I3 perovskite material.

4. The method for rapidly preparing large-area micron-sized wires with polarized photoelectric synaptic properties based on the immersion method according to claim 1, characterized in that, The specific process for preparing CsCu2I3 perovskite microwires based on the immersion method is as follows: A layer of polydimethylsiloxane (PDMS) with microchannels is coated on a substrate and slowly placed into a transparent container filled with a CsCu2I3 precursor solution, so that the bottom of the PDMS-coated substrate is immersed in the precursor solution and the top is above the liquid surface. The triple driving forces of capillary force, hydrostatic pressure and evaporation-induced flow are introduced. After the CsCu2I3 solution fills the entire microchannel area, the device is removed and placed on an annealing stage for heat treatment. Finally, the top PDMS is peeled off.

5. The method for rapidly preparing large-area micron-sized wires with polarized photoelectric synaptic properties based on the immersion method according to claim 4, characterized in that, The specific process for preparing CsCu2I3 perovskite microwires based on the immersion method is as follows: First, 0.2598 g of cesium iodide powder and 0.38 g of cuprous iodide powder were mixed and dissolved in a 1:1 mixture of dimethyl sulfoxide and dimethylformamide in a 2 mL volume; the mixture was stirred at room temperature for 12 hours to form a CsCu2I3 solution; and the prepared CsCu2I3 solution was placed in an argon-protected glove box. Secondly, a layer of polydimethylsiloxane PDMS with microchannels was coated on the substrate and then transferred to a glove box; Next, the substrate covered with PDMS microchannels was slowly placed into a transparent container containing CsCu2I3 precursor solution, so that the bottom end of the PDMS substrate was immersed in the precursor solution, while the other end remained above the liquid surface. After standing for a few minutes, the precursor solution gradually filled the entire microchannel area under the triple driving force of capillary force, hydrostatic pressure and evaporation-induced flow. Finally, the substrate filled with CsCu2I3 solution was placed on a 60°C annealing stage and heated for 15 minutes, after which the top PDMS was peeled off.

6. A method for fabricating a polarized photoelectric synaptic device based on an immersion method, characterized in that, The method includes the following steps: S1: Select a substrate and clean it; S2: Using photolithography, a symmetrical electrode layer is prepared on a substrate. The electrode layer includes two bases and two interdigital units. The two bases are arranged opposite to each other, and the two interdigital units are respectively connected to the two bases. The interdigitals on the two interdigital units extend towards each other and are insulated from each other. S3: Cover the substrate with a layer of polydimethylsiloxane (PDMS) with microchannels, and slowly place it into a transparent container filled with CsCu2I3 precursor solution, so that the bottom of the PDMS substrate is immersed in the precursor solution and the top is above the liquid surface. Introduce capillary force, hydrostatic pressure and evaporation-induced flow as triple driving forces. After the CsCu2I3 solution fills the entire microchannel area, remove the device and place it on an annealing stage for heat treatment. Finally, peel off the top PDMS.

7. The method for fabricating a polarized photoelectric synaptic device based on the immersion method according to claim 6, characterized in that, The cleaning process is as follows: the prepared substrate is placed in acetone, ethanol and deionized water for ultrasonic cleaning for 10 minutes each, and then dried with high-purity nitrogen to complete the first cleaning treatment, which removes impurities and oil stains; and the substrate is placed in a glass culture dish and cleaned with a plasma machine for 10 minutes to complete the second cleaning treatment, which makes the substrate surface more hydrophilic and helps the solution spread and form a film. Oxygen can be selected as the gas used for cleaning.

8. The method for fabricating a polarized photoelectric synaptic device based on the immersion method according to claim 6, characterized in that, The specific process of step S3 is as follows: First, 0.2598 g of cesium iodide powder and 0.38 g of cuprous iodide powder were mixed and dissolved in a 1:1 mixture of dimethyl sulfoxide and dimethylformamide in a 2 mL volume; the mixture was stirred at room temperature for 12 hours to form a CsCu2I3 solution; and the prepared CsCu2I3 solution was placed in an argon-protected glove box. Secondly, a layer of polydimethylsiloxane PDMS with microchannels was coated on the substrate and then transferred to a glove box; Next, the substrate covered with PDMS microchannels was slowly placed into a transparent container containing CsCu2I3 precursor solution, so that the bottom end of the PDMS substrate was immersed in the precursor solution, while the other end remained above the liquid surface. After standing for a few minutes, the precursor solution gradually filled the entire microchannel area under the triple driving force of capillary force, hydrostatic pressure and evaporation-induced flow. Finally, the substrate filled with CsCu2I3 solution was placed on a 60°C annealing stage and heated for 15 minutes, after which the top PDMS was peeled off.

9. The method for fabricating a polarized photoelectric synaptic device based on the immersion method according to claim 6, characterized in that, The substrate is made of Si / SiO2 or PET and is cut to a size of 1.8 cm × 1.8 cm.

10. The method for fabricating a polarized photoelectric synaptic device based on the immersion method according to claim 6, characterized in that, The interdigitated unit is made of gold.

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