Cleaning equipment, cleaning method, cleaning device, control equipment, product and medium

By using a toroidal Helmholtz coil and a monitoring and control unit in the cleaning equipment to dynamically control the magnetic field strength, the problems of low removal efficiency and insufficient uniformity of traditional SC2 cleaning fluid are solved, achieving a highly efficient and energy-saving wafer cleaning effect.

CN121665982APending Publication Date: 2026-03-13XIAN ESWIN MATERIAL TECHNOLOGY CO LTD +1
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Patent Information

Authority / Receiving Office
CN · China
Patent Type
Applications(China)
Current Assignee / Owner
Filing Date
2025-12-11
Publication Date
2026-03-13

AI Technical Summary

Technical Problem

Traditional SC2 cleaning solution is inefficient, consumes a lot of solution, and has insufficient cleaning uniformity when removing metal contaminants from wafer surfaces. Existing improved solutions are complex, energy-intensive, or prone to introducing secondary pollution, making it difficult to cope with sudden pollution incidents.

Method used

A uniform magnetic field is generated using a toroidal Helmholtz coil, which drives the migration of metal ions through the Lorentz force. The magnetic field strength is dynamically controlled by a monitoring unit and a control unit, and the concentration, temperature and ratio of the cleaning solution are optimized to achieve the synergistic effect of the magnetic field and the cleaning solution.

Benefits of technology

It improves cleaning efficiency and uniformity, reduces chemical consumption, shortens cleaning time, improves the removal effect of metal contaminants, and reduces the standard deviation of metal residue in the chemical tank.

✦ Generated by Eureka AI based on patent content.

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Abstract

The invention provides cleaning equipment, a cleaning method, a cleaning device, control equipment, a product and a medium, and belongs to the technical field of semiconductor cleaning. Comprising a liquid medicine tank which is provided with an accommodating space and is used for accommodating cleaning liquid and a wafer; the annular Helmholtz coil comprises two circular conductor coils with the same radius, the two conductor coils are coaxially arranged, the distance between the two conductor coils is equal to the radius of the conductor coils, the liquid medicine groove is formed in the two conductor coils, and the axis of each conductor coil is perpendicular to the wafer in the liquid medicine groove; the monitoring unit is used for monitoring content data of metal ions in the cleaning liquid; and the control unit is used for acquiring the content data and / or target information of the cleaning fluid and controlling the magnetic field intensity of the magnetic field generated by the annular Helmholtz coil according to the content data and / or the target information. According to the technical scheme, migration of metal ions in the cleaning liquid can be accelerated by controlling the magnetic field intensity, and the cleaning efficiency and the cleaning uniformity are improved.
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Description

Technical Field

[0001] This invention relates to the field of semiconductor cleaning technology, and in particular to a cleaning device, cleaning method, cleaning apparatus, control device, product, and medium. Background Technology

[0002] In traditional semiconductor cleaning processes, SC2 cleaning solution (composed of hydrochloric acid HCl and hydrogen peroxide) Water The mixture (made in a specific ratio) is often used to remove metal contaminants from the surface of wafers. However, this process currently has the following drawbacks: the reaction kinetics of metal ions (such as iron (Fe), aluminum (Al), copper (Cu) and SC2 cleaning solution are limited, resulting in low removal efficiency, high consumption of cleaning solution, and high process cost. In addition, the cleaning uniformity is insufficient, which can easily lead to local metal residues on the wafer.

[0003] To address the aforementioned shortcomings, existing improvement solutions (such as ultrasonic assistance and temperature gradient control) are prone to problems such as complex equipment, high energy consumption, or the risk of introducing secondary pollution. Furthermore, they lack flexibility and are difficult to respond to unexpected, unpredictable, or sudden pollution events that require immediate response. Summary of the Invention

[0004] This invention provides a cleaning device, cleaning method, cleaning apparatus, control device, product, and medium, which can accelerate the migration of metal ions in the cleaning solution by controlling the magnetic field strength, thereby improving cleaning efficiency and cleaning uniformity.

[0005] To achieve the above objectives, the technical solution adopted in the embodiments of the present invention is as follows:

[0006] A cleaning device, comprising:

[0007] The cleaning solution tank has a receiving space for holding the cleaning solution and the wafer to be cleaned;

[0008] A toroidal Helmholtz coil includes: two circular conductor coils of the same radius, the two conductor coils being coaxially arranged, and the distance between the two conductor coils being equal to the radius of the conductor coils, wherein a liquid bath is disposed in the space between the two conductor coils, and the axis of the conductor coils is perpendicular to the wafer in the liquid bath;

[0009] A monitoring unit is installed in the cleaning solution tank. The monitoring unit is used to monitor the content data of at least one metal ion in the cleaning solution.

[0010] The control unit is connected to both the monitoring unit and the toroidal Helmholtz coil. The control unit acquires content data and / or target information for the cleaning solution, and controls the magnetic field strength generated by the toroidal Helmholtz coil based on the content data and / or target information, including temperature and / or drug concentration ratio.

[0011] In some embodiments, the monitoring unit includes a multi-parameter sensor array immersed in the cleaning solution in the drug tank.

[0012] This invention also provides a cleaning method applied to the cleaning equipment described above. The cleaning method includes:

[0013] Acquire data on the content of at least one metal ion in the cleaning solution monitored by the monitoring unit and / or target information of the cleaning solution, including temperature information and / or drug solution ratio information;

[0014] Based on the content data of at least one metal ion and / or target information, determine the value of the target parameter corresponding to the cleaning solution. The target parameter includes at least one of the following: concentration level coefficient, temperature level coefficient, ratio level coefficient and ion type weight.

[0015] Determine the target magnetic field strength based on the values ​​of the target parameters;

[0016] The magnetic field strength generated by the toroidal Helmholtz coil is controlled according to the target magnetic field strength.

[0017] In some embodiments, the value of the target parameter corresponding to the cleaning solution is determined based on the content data of at least one metal ion and / or target information, including at least one of the following:

[0018] Based on the content data of at least one metal ion, the ion type of each metal ion, and the weight value corresponding to each ion type, the comprehensive content data of the cleaning solution is determined, and based on the first preset rule and the concentration range to which the comprehensive content data belongs, the value of the concentration level coefficient corresponding to the cleaning solution is determined.

[0019] Based on the second preset rule and the temperature range to which the temperature information belongs, determine the value of the temperature rating coefficient corresponding to the cleaning fluid;

[0020] Based on the third preset rule and the drug solution ratio information, determine the value of the ratio grade coefficient corresponding to the cleaning solution;

[0021] Based on the content data of at least one metal ion and the ion type to which each metal ion belongs, determine the concentration ratio of each ion type, and based on the concentration ratio and weight value of each ion type, determine the weight value of the ion type corresponding to the cleaning solution.

[0022] The first preset rule includes the mapping relationship between concentration range and concentration level coefficient;

[0023] The second preset rule includes the mapping relationship between temperature range and temperature level coefficient;

[0024] The third preset rule includes the mapping relationship between the drug solution ratio range and the ratio grade coefficient.

[0025] In some embodiments, the magnetic field strength of the magnetic field generated by the toroidal Helmholtz coil is controlled according to the target magnetic field strength, including:

[0026] Determine the values ​​of the current parameters based on the target magnetic field strength;

[0027] The magnetic field strength of the magnetic field generated by the toroidal Helmholtz coil is controlled based on the value of the current parameter.

[0028] In some embodiments, the current parameters include at least one of current direction, current frequency, and current intensity.

[0029] This invention also provides a cleaning device, applied to the cleaning equipment described above, comprising:

[0030] The data acquisition module is used to acquire the content data of at least one metal ion in the cleaning fluid monitored by the monitoring unit and / or the target information of the cleaning fluid, including temperature information and / or drug solution ratio information.

[0031] The first processing module is used to determine the value of the target parameter corresponding to the cleaning solution based on the content data of at least one metal ion and / or target information. The target parameter includes at least one of the following: concentration level coefficient, temperature level coefficient, ratio level coefficient and ion type weight.

[0032] The second processing module is used to determine the target magnetic field strength based on the values ​​of the target parameters;

[0033] The first control module is used to control the magnetic field strength of the magnetic field generated by the toroidal Helmholtz coil according to the target magnetic field strength.

[0034] In some embodiments, the first processing module includes:

[0035] The first processing unit is used to determine the comprehensive content data of the cleaning solution based on the content data of at least one metal ion, the ion type of each metal ion and the weight value corresponding to each ion type, and to determine the value of the concentration level coefficient corresponding to the cleaning solution based on the first preset rule and the concentration range to which the comprehensive content data belongs.

[0036] The second processing unit is used to determine the value of the temperature grade coefficient corresponding to the cleaning fluid according to the second preset rule and the temperature range to which the temperature information belongs;

[0037] The third processing unit is used to determine the value of the ratio grade coefficient corresponding to the cleaning solution according to the third preset rule and the ratio range of the drug solution to which the drug solution ratio information belongs;

[0038] The fourth processing unit is used to determine the concentration ratio of each ion type based on the content data of at least one metal ion and the ion type to which each metal ion belongs, and to determine the weight value of the ion type corresponding to the cleaning solution based on the concentration ratio and weight value of each ion type.

[0039] The first preset rule includes the mapping relationship between concentration range and concentration level coefficient;

[0040] The second preset rule includes the mapping relationship between temperature range and temperature level coefficient;

[0041] The third preset rule includes the mapping relationship between the drug solution ratio range and the ratio grade coefficient.

[0042] In some embodiments, the first control module includes:

[0043] The fifth processing unit is used to determine the values ​​of the current parameters based on the target magnetic field strength;

[0044] The first control unit is used to control the magnetic field strength of the magnetic field generated by the toroidal Helmholtz coil according to the value of the target current parameter.

[0045] In some embodiments, the current parameters include at least one of current direction, current frequency, and current intensity.

[0046] This invention also provides a control device, including a memory, a processor, and a computer program stored in the memory and executable on the processor; when the processor executes the computer program, it implements the cleaning method described above.

[0047] This invention also provides a computer program product, including computer instructions that, when executed by a processor, implement the steps of the cleaning method described above.

[0048] To achieve the above objectives, embodiments of the present invention provide a readable storage medium having a program or instructions stored thereon, which, when executed by a processor, implement the steps of the cleaning method described above.

[0049] The beneficial effects of this invention are:

[0050] In this embodiment, a ring-shaped Helmholtz coil generates a uniform magnetic field. Through the synergistic effect of the magnetic field and the cleaning solution, the removal of metal contaminants from the wafer surface can be accelerated. Furthermore, the control unit can dynamically control the magnetic field strength generated by the ring-shaped Helmholtz coil based on the metal ion content data monitored by the monitoring unit. This more effectively accelerates the migration of metal ions in the cleaning solution tank, enhances the redox reaction in the cleaning solution, improves the removal effect and efficiency of metal contaminants in the cleaning solution tank, and reduces the consumption of the cleaning solution. Attached Figure Description

[0051] Figure 1 This is a front view of the cleaning equipment according to an embodiment of the present invention cleaning a wafer;

[0052] Figure 2 A top view showing the cleaning equipment of this embodiment of the invention cleaning a wafer;

[0053] Figure 3 This is a schematic diagram showing the structure of the cleaning equipment according to an embodiment of the present invention;

[0054] Figure 4 A schematic diagram showing a comparison of the metal contaminant removal effects of embodiments of the present invention and conventional processes;

[0055] Figure 5 A flowchart illustrating the cleaning method according to an embodiment of the present invention;

[0056] Figure 6 This is a schematic diagram showing the structure of the cleaning device according to an embodiment of the present invention. Detailed Implementation

[0057] To make the objectives, technical solutions, and advantages of the embodiments of the present invention clearer, the technical solutions of the embodiments of the present invention will be clearly and completely described below with reference to the accompanying drawings. Obviously, the described embodiments are only some, not all, of the embodiments of the present invention. All other embodiments obtained by those skilled in the art based on the described embodiments of the present invention are within the scope of protection of the present invention.

[0058] To address the aforementioned technical problems, embodiments of the present invention provide a cleaning device, a cleaning method, a cleaning apparatus, a control device, a product, and a medium, which can accelerate the migration of metal ions in the cleaning solution by controlling the magnetic field strength, thereby improving cleaning efficiency and cleaning uniformity.

[0059] like Figures 1-2 As shown, an embodiment of the present invention provides a cleaning device, including: a chemical solution tank 1, an annular Helmholtz coil 4, a monitoring unit, and a control unit.

[0060] The cleaning solution tank 1 has a accommodating space for holding the cleaning solution 2 and the wafer 3 to be cleaned.

[0061] Here, cleaning solution 2 can specifically be SC2 cleaning solution, wherein the components of SC2 cleaning solution include: HCl, and The ratio of the drug solution (e.g., volume ratio) The ratio can be 1:1:5 to 1:2:10, or 1:2:6 to 1:2:8, etc., depending on the actual situation.

[0062] It should be noted that a wafer holder is provided within the accommodating space of the cleaning solution tank 1. This wafer holder is used to hold the wafer 3 to be cleaned, such as... Figure 2 As shown, the wafer holder can fix multiple wafers 3 to be cleaned in the cleaning solution tank 1. The wafer holder is made of a non-magnetic material.

[0063] The toroidal Helmholtz coil 4 includes two circular conductor coils of the same radius, which are coaxially arranged and the distance between the two conductor coils is equal to the radius of the conductor coils. The liquid tank 1 is disposed in the space between the two conductor coils, and the axis of the conductor coils is perpendicular to the wafer 3 in the liquid tank 1.

[0064] Here, as Figures 1-2 As shown, a ring-shaped Helmholtz coil 4 is set around the periphery of the cleaning solution tank 1 to generate a uniform magnetic field with a uniformity >95%, and the magnetic field direction is perpendicular to the wafer 3 in the cleaning solution tank 1. In this way, by applying the magnetic field, the Lorentz force can be used to drive the migration of metal ions in the cleaning solution tank 1, generating magnetohydrodynamics (MHD) effect, which enhances the redox reaction in the cleaning solution 2, thereby improving the removal effect and efficiency of metal contaminants on the surface of the wafer 3 in the cleaning solution tank 1. For example, the removal rate of contaminants such as iron (Fe) and copper (Cu) can be increased by 20% to 40%.

[0065] It should be noted that the magnetic field generated by the toroidal Helmholtz coil 4 can effectively shorten the reaction time. Therefore, the cleaning time of a single cleaning of wafer 3 in this embodiment can be controlled within 3 to 6 minutes. In addition, the magnetic field can suppress the local concentration gradient of the cleaning solution (cleaning solution 2) in the cleaning solution tank 1, thereby reducing the standard deviation of metal residue on the surface of wafer 3 by more than 50%, thus effectively improving the cleaning uniformity.

[0066] like Figure 3 As shown, a monitoring unit is installed in the liquid tank 1. The monitoring unit is used to monitor the content data of at least one metal ion in the cleaning solution 2.

[0067] It should be noted that, in a specific example, the content data can characterize the amount of metal ions in the cleaning solution 2. Specifically, the content data can be the metal ion concentration, that is, the molar concentration of metal ions in the cleaning solution 2, i.e., the amount of metal ions contained in a unit volume of the cleaning solution 2.

[0068] In some specific examples, the monitoring unit includes a multi-parameter sensor array, which is immersed in the cleaning solution 2 in the drug solution tank 1. In this way, by using an immersion multi-parameter sensor array, the solution ion concentration (metal ion content data) of multiple metal ions in the cleaning solution 2 can be monitored simultaneously.

[0069] The control unit is connected to both the monitoring unit and the toroidal Helmholtz coil 4. The control unit acquires the content data monitored by the monitoring unit and / or the target information of the cleaning solution 2, and controls the magnetic field strength generated by the toroidal Helmholtz coil 4 based on the content data and / or the target information, including temperature information and / or drug solution ratio information.

[0070] It should be noted that the control unit can adjust the magnetic field strength based on the above-mentioned content data, temperature information, and drug solution ratio information. For details on how to control it, please refer to the various embodiments in the following cleaning methods.

[0071] like Figure 3 As shown in some specific embodiments, the control unit specifically includes a logic control integrated module and a drive module.

[0072] The logic control integrated module includes a microcontroller, a sensor interface circuit, and an algorithm storage unit. Here, the algorithm storage unit stores the concentration-field strength mapping model and a dynamic arbitration rule base; the sensor interface circuit connects to a multi-parameter sensor array; and the microcontroller processes data in real time. The core functions of this logic control integrated module include: parsing sensor data (i.e., metal ion content data, such as…). The magnetic field strength is controlled based on sensor data and a concentration-field strength mapping model (reflecting the relationship between content data, target information of cleaning fluid 2, and magnetic field strength). For example, a command can be sent to the drive module to trigger a magnetic field strength mode (i.e., normal mode, enhanced mode, or pulse mode, for example). When the pulse exceeds the limit, switch to 1.2T pulse, which is equivalent to switching to enhanced mode [0.5-1.2T].

[0073] The drive module includes a power amplifier, a magnetic field generating unit, a protection circuit, and a feedback loop. Here, the power amplifier can be a linear amplifier with an adjustable current output of 0-100A; the magnetic field generating unit can be a Helmholtz coil drive circuit supporting DC / pulse modes; the protection circuit (such as a fuse) is used for overcurrent protection; and the feedback loop (such as using a Hall sensor to monitor the magnetic field strength in real time) is used to correct the current output. The core functions of this drive module include: converting the instructions from the logic control integrated module into coil current (e.g., 20A for 0.5T, 75A for 1.5T), thereby achieving multi-mode drive (such as normal mode, enhanced mode, and pulse mode); and dynamically adjusting the voltage according to the conductivity of the liquid solution to reduce ohmic losses, thus optimizing energy efficiency.

[0074] It should be noted that experiments show that controlling the magnetic field strength by the control unit can effectively reduce the reaction response delay (<2 seconds), improve the control accuracy (±0.05T), and enhance the sensitivity to concentration changes (5ppb).

[0075] It should be noted that in the cleaning equipment provided in the embodiments of the present invention, the control unit can execute the steps in the cleaning method in other embodiments of the present invention. For specific implementation methods and technical effects, please refer to the description in the embodiments of the cleaning method, which will not be repeated here.

[0076] In some optional examples, the cleaning device also includes a temperature control unit, which can control the temperature of the cleaning solution 2 in the solution tank 1 to be between 50 and 70°C. This optimizes the synergistic effect of molecular thermal motion and magnetic field.

[0077] In some optional examples, the cleaning device further includes a chemical solution circulation system, wherein, under the same cleaning effect as the prior art, the chemical solution (cleaning solution 2) replenishment cycle in the embodiments of the present invention is extended by 15% to 30%, the service life of the chemical solution is effectively extended, and the chemical solution circulation system does not require frequent replacement of the chemical solution.

[0078] like Figure 4 The diagram shows a comparison of the metal contaminant removal effects of the embodiments of the present invention and traditional processes. The horizontal axis represents the duration of the cleaning process, and the vertical axis represents the amount of a certain metal ion (such as iron, Fe) removed. It can be seen that the cleaning effect of the cleaning equipment in the embodiments of the present invention (line 5) is better than that of the traditional process (line 6).

[0079] It is understood that the cleaning equipment of the present invention mainly improves the cleaning effect by setting up a ring-shaped Helmholtz coil 4, a monitoring unit and a control unit. Therefore, it is compatible with existing cleaning equipment, has low modification costs, and does not require additional chemical additives, thus avoiding the introduction of new sources of pollution.

[0080] In this embodiment, the cleaning equipment is equipped with a ring-shaped Helmholtz coil 4 to generate a uniform magnetic field. Through the synergistic effect of the magnetic field and the cleaning solution (cleaning solution 2), the reaction efficiency can be improved, and the removal of metal ions from the surface of the wafer 3 can be accelerated. Moreover, the control unit can dynamically control the magnetic field strength generated by the ring-shaped Helmholtz coil 4 based on the metal ion content data monitored by the monitoring unit, thereby more effectively accelerating the migration of metal ions in the cleaning solution tank 1, enhancing the redox reaction in the cleaning solution 2, improving the removal effect and efficiency of metal contaminants on the surface of the wafer 3 in the cleaning solution tank 1, and reducing the consumption of cleaning solution.

[0081] like Figure 5 As shown, this embodiment of the invention also provides a cleaning method applied to the cleaning equipment described above. The cleaning method includes:

[0082] Step 501: Obtain the content data of at least one metal ion in the cleaning solution 2 monitored by the monitoring unit and / or the target information of the cleaning solution 2, including temperature information and / or drug solution ratio information.

[0083] It should be noted that the cleaning method of this invention is applied to the cleaning equipment described above, and can be executed by the control unit in the cleaning equipment. Therefore, this cleaning method can achieve the same technical effect as the cleaning equipment described above, and the technical terms in this cleaning method can be referred to the explanations in the embodiments of the cleaning equipment. For example, the content data can specifically be the metal ion concentration.

[0084] Step 502: Based on the content data of at least one metal ion and / or target information, determine the value of the target parameter corresponding to the cleaning solution 2. The target parameter includes at least one of the following: concentration level coefficient, temperature level coefficient, ratio level coefficient, and ion type weight.

[0085] Step 503: Determine the target magnetic field strength based on the value of the target parameter.

[0086] It should be noted that when calculating the target magnetic field strength in step 503, it can be determined based on the product of the basic magnetic field strength value and the value of at least one target parameter.

[0087] As one alternative embodiment, the target magnetic field strength can be calculated using the following formula:

[0088] B target =B base ×K_C×K_T×K_R×W, where B target B represents the target magnetic field strength. base K represents the basic magnetic field strength value, K_C represents the concentration level coefficient, K_T represents the temperature level coefficient, K_R represents the proportion level coefficient, and W represents the ion type weight.

[0089] It should be noted that B base The value can be preset according to the process stage. For example, in the initial stage or pre-cleaning stage, the basic magnetic field strength value can be preset to B. base =0.3T, during the main cleaning phase, the basic magnetic field strength value can be preset to B. base =0.8T.

[0090] Step 504: Control the magnetic field strength of the magnetic field generated by the toroidal Helmholtz coil 4 according to the target magnetic field strength.

[0091] It should be noted that this dynamic control of the magnetic field strength can achieve precise directional delivery of magnetic field energy, resulting in better wafer cleaning effects.

[0092] In this embodiment, the magnetic field strength of the magnetic field generated by the annular Helmholtz coil 4 can be dynamically controlled based on the metal ion content data monitored by the monitoring unit, combined with the temperature information of the cleaning solution 2 and / or the drug solution ratio information, thereby accelerating the migration of metal ions in the drug solution tank 1, strengthening the redox reaction in the cleaning solution 2, and improving the removal effect and efficiency of metal contaminants on the surface of the wafer 3 in the drug solution tank 1.

[0093] In some embodiments, the value of the target parameter corresponding to the cleaning solution 2 is determined based on the content data of at least one metal ion and / or target information, including at least one of the following:

[0094] (i) Based on the content data of at least one metal ion, the ion type of each metal ion, and the weight value corresponding to each ion type, determine the comprehensive content data of cleaning solution 2, and determine the value of the concentration level coefficient corresponding to cleaning solution 2 according to the first preset rule and the concentration range to which the comprehensive content data belongs. The first preset rule includes the mapping relationship between the concentration range and the concentration level coefficient.

[0095] For example, metal ions can be classified into two types: light metal ions and heavy metal ions, and a weight can be assigned to each type. Understandably, they can also be classified into other metal types based on actual production conditions; no specific limitations are made here.

[0096] In one optional example, the weighting coefficient (i.e., weight value) for heavy metal ions (such as Fe, Cu, zinc, Zn, etc.) can be set to 0.7, and the weighting coefficient for light metal ions (such as Na, K, Al, etc.) can be set to 0.3. Specifically, taking the content data as metal ion concentration as an example, the following two methods can be used to perform weighted summation to obtain the comprehensive content data of cleaning solution 2:

[0097] Method 1:

[0098] Assuming that tank 1 contains three heavy metal ions (e.g., Fe, Cu, Zn) with concentrations of C1, C2, and C3, and two light metal ions (e.g., Na, K) with concentrations of C4 and C5, the overall content data is: [0.7 × (C1 + C2 + C3) + 0.3 × (C4 + C5)] ÷ 5. In other words, the overall content data of cleaning solution 2 can be obtained by adding the concentrations of the same type of metal ions, performing a weighted summation, and then averaging the results.

[0099] Method 2:

[0100] Assuming C1 > C2 > C3 and C4 > C5, for the metal ions in the solution tank 1, the highest concentration of heavy metal ions (C1) and the highest concentration of light metal ions (C4) are selected. The comprehensive content data is then: [0.7C1 + 0.3C4] ÷ 2. In other words, the comprehensive content data of cleaning solution 2 can be obtained by selecting the maximum value from the metal ion concentrations of different types, performing a weighted summation of the selected maximum values, and then calculating the average.

[0101] It should be noted that, in some specific embodiments, when determining the value of the concentration level coefficient (K_C) corresponding to the cleaning solution 2 based on the first preset rule and the concentration range to which the comprehensive content data belongs, the relevant information of the first preset rule is as follows:

[0102]

[0103] In other words, if the concentration range of the comprehensive content data is C<50ppm, then the concentration level coefficient (K_C) of cleaning solution 2 can be determined to be 0.6.

[0104] (ii) Determine the value of the temperature grade coefficient (K_T) corresponding to cleaning fluid 2 based on the second preset rule and the temperature range to which the temperature information belongs. The second preset rule includes the mapping relationship between the temperature range and the temperature grade coefficient.

[0105] Here, as an optional example, the relevant information for the second preset rule is as follows:

[0106]

[0107] (iii) Determine the value of the ratio grade coefficient (K_R) corresponding to cleaning solution 2 based on the third preset rule and the ratio range of the drug solution. The third preset rule includes the mapping relationship between the drug solution ratio range and the ratio grade coefficient.

[0108] Here, as an optional example, the relevant information for the third preset rule is as follows:

[0109]

[0110] (iv) Based on the content data of at least one metal ion and the ion type to which each metal ion belongs, determine the concentration ratio of each ion type, and based on the concentration ratio and weight value of each ion type, determine the weight value of the ion type corresponding to cleaning solution 2.

[0111]

[0112] It should be noted that this explanation uses ion types including light metal ions and heavy metal ions as an example. Assume that the weight value corresponding to heavy metal ions is 0.7, the weight value corresponding to light metal ions is 0.3, the concentration ratio of heavy metal ions is C_heavy metals / C_total, and the concentration ratio of light metal ions is C_light metals / C_total. Here, C_heavy metals represents the sum of the content data of various heavy metal ions, C_total is the sum of the content data of all metal ions, and C_light metals represents the sum of the content data of various light metal ions.

[0113] In some specific embodiments, the magnetic field strength of the magnetic field generated by the toroidal Helmholtz coil (4) is controlled according to the target magnetic field strength, including:

[0114] The values ​​of the current parameters are determined based on the target magnetic field strength. The magnetic field strength generated by the toroidal Helmholtz coil 4 is then controlled based on these current parameter values. In some specific examples, the current parameters include at least one of the following: current direction, current frequency, and current intensity.

[0115] It should be noted that the current flowing through the toroidal Helmholtz coil 4 can be controlled according to the value of the current parameter, thereby achieving the purpose of controlling the magnetic field strength generated by the toroidal Helmholtz coil 4.

[0116] The experimental process and verification results of the cleaning method provided in the embodiments of the present invention are described below:

[0117] Experiment 1: The purpose of classifying and assigning coefficients to key parameters is to divide continuous monitoring parameters (such as content data, temperature information, and drug solution ratio information) into a limited number of levels and assign an influence coefficient to each level.

[0118] The testing method includes: cleaning the wafer using the cleaning method provided in this embodiment of the invention; during the cleaning process, using an online sensor array (i.e., a multi-parameter sensor array) to monitor ion concentration, for example, recording the concentration of Fe²⁺ (i.e., Fe²⁺) every 30 seconds. (Content data). After each experiment, the cleaning effect was evaluated, and the atomic density of residual metal on the wafer surface (atoms / cm²) was measured.

[0119] The results of one experiment are as follows:

[0120]

[0121] This experiment demonstrates that there exists an optimal magnetic field strength window, where the metal removal rate initially increases rapidly with increasing magnetic field strength before saturating. The optimal field strength (magnetic field intensity) is approximately 0.8-1.0T. Beyond this range, the cleaning efficiency gain decreases due to MHD eddy current interference. The concentration-field strength mapping model described above is most accurate under high-temperature conditions, specifically at 70°C, where thermal diffusion dominates the process, the magnetic field synergistic effect is more stable, and the theoretical prediction error is minimized (≤3%), verifying the reliability of the model under optimized process conditions.

[0122] Experiment 2: Verification of dynamic priority arbitration, the purpose of which is to verify the adaptability of weighting coefficients (e.g., the weight of heavy metal ions (e.g., Fe / Cu) = 0.7, and the weight of light metal ions (e.g., Na / K) = 0.3) to multi-ion coexistence systems.

[0123] The contamination conditions are set as follows: simulating coexistence on the wafer surface. (80 ppm) (50 ppm) (120ppm).

[0124] The process parameters include: SC2 ratio of 1:2:8, solution temperature of 60℃, and cleaning time of 5 minutes.

[0125] The comparison schemes are as follows:

[0126] (1) Dynamic arbitration group: The magnetic field strength is dynamically calculated and adjusted based on the real-time ion concentration and weighting coefficient (W=0.7×C_heavy / C_total+0.3×C_light / C_total).

[0127] (2) Fixed field strength group: constant magnetic field 0.5T (conventional empirical value).

[0128] Monitoring methods: Ion concentration was monitored online using a multi-parameter sensor array; after cleaning, total reflection X-ray fluorescence (TXRF) was used to analyze metal residues on the wafer surface.

[0129] The results of one experiment are as follows:

[0130]

[0131] This experiment demonstrates that the dynamic arbitration strategy in this invention (i.e., controlling the magnetic field strength based on content data and / or target information) can accurately achieve the process objectives. In this experiment, the removal rate of heavy metals (Fe / Cu) was significantly improved (reaching 18%~25%), while the removal rate of light metals decreased accordingly, which is consistent with the preset weight guidance. Compared with the fixed field strength mode, dynamic arbitration improves the removal effect of key pollutants while reducing the total energy consumption by about 20%, verifying the comprehensive advantages of intelligent weight allocation in terms of energy efficiency and cleaning selectivity.

[0132] Furthermore, it should be noted that in some optional embodiments, an electromagnetic coil driving strategy can also be set. For example, three magnetic field strength modes can be set: a normal mode [0.1-0.5T], an enhanced mode [0.5-1.2T], and a pulse mode (1.2-1.5T). The mode to which the toroidal Helmholtz coil 4 is adjusted can be determined according to the target magnetic field strength. Among them, the main target of the normal mode is light metals or low pollution concentration, and its corresponding current characteristic is stable DC; the main target of the enhanced mode is heavy metals or medium to high pollution concentration, and its corresponding current characteristic is constant current or slowly changing DC; the main target of the pulse mode is stubborn pollutants (such as surface passivation layer metal), and its corresponding current characteristic is high-frequency pulse (kHz level).

[0133] The cleaning method of this invention utilizes the unique response behavior of metal materials in a magnetic field (metal magnetic response characteristics) to actively control and enhance the chemical reaction process in the solution. By monitoring the concentration of metal ions in the cleaning solution, the magnetic field strength of the magnetic field generated by the ring Helmholtz coil 4 is dynamically adjusted in real time, thereby achieving precise directional delivery of magnetic field energy. This accelerates the migration of metal ions in the cleaning solution tank 1, strengthens the redox reaction in the cleaning solution 2, and improves the removal effect and efficiency of metal contaminants on the surface of the wafer 3 in the cleaning solution tank 1.

[0134] like Figure 6 As shown, embodiments of the present invention also provide a cleaning device, applied to the cleaning equipment described above, comprising:

[0135] The data acquisition module 610 is used to acquire the content data of at least one metal ion in the cleaning solution 2 monitored by the monitoring unit and / or the target information of the cleaning solution 2, including temperature information and / or drug solution ratio information.

[0136] The first processing module 620 is used to determine the value of the target parameter corresponding to the cleaning solution 2 based on the content data of at least one metal ion and / or target information. The target parameter includes at least one of the following: concentration level coefficient, temperature level coefficient, ratio level coefficient and ion type weight.

[0137] The second processing module 630 is used to determine the target magnetic field strength based on the value of the target parameter;

[0138] The first control module 640 is used to control the magnetic field strength of the magnetic field generated by the toroidal Helmholtz coil 4 according to the target magnetic field strength.

[0139] In this embodiment, the magnetic field strength of the magnetic field generated by the annular Helmholtz coil 4 can be dynamically controlled based on the metal ion content data monitored by the monitoring unit, thereby accelerating the migration of metal ions in the cleaning solution tank 1, strengthening the redox reaction in the cleaning solution 2, and improving the removal effect and efficiency of metal contaminants on the surface of the wafer 3 in the cleaning solution tank 1.

[0140] In some embodiments, the first processing module 620 includes:

[0141] The first processing unit is used to determine the comprehensive content data of the cleaning solution 2 based on the content data of at least one metal ion, the ion type of each metal ion and the weight value corresponding to each ion type, and to determine the value of the concentration level coefficient corresponding to the cleaning solution 2 based on the first preset rule and the concentration range to which the comprehensive content data belongs.

[0142] The second processing unit is used to determine the value of the temperature grade coefficient corresponding to the cleaning fluid 2 according to the second preset rule and the temperature range to which the temperature information belongs;

[0143] The third processing unit is used to determine the value of the ratio grade coefficient corresponding to the cleaning solution 2 according to the third preset rule and the ratio range of the drug solution to which the drug solution ratio information belongs;

[0144] The fourth processing unit is used to determine the concentration ratio of each ion type based on the content data of at least one metal ion and the ion type to which each metal ion belongs, and to determine the ion type weight value of the cleaning solution 2 based on the concentration ratio and weight value of each ion type.

[0145] The first preset rule includes the mapping relationship between concentration range and concentration level coefficient;

[0146] The second preset rule includes the mapping relationship between temperature range and temperature level coefficient;

[0147] The third preset rule includes the mapping relationship between the drug solution ratio range and the ratio grade coefficient.

[0148] In some embodiments, the first control module 640 includes:

[0149] The fifth processing unit is used to determine the values ​​of the current parameters based on the target magnetic field strength;

[0150] The first control unit is used to control the magnetic field strength of the magnetic field generated by the toroidal Helmholtz coil according to the value of the target current parameter.

[0151] In some embodiments, the current parameters include at least one of current direction, current frequency, and current intensity.

[0152] This application also provides a control device, including a memory, a processor, and a computer program stored in the memory and executable on the processor; when the processor executes the computer program, it implements the cleaning method described above.

[0153] This application also provides a computer program product, including computer instructions, which, when executed by a processor, implement the above-described... Figure 5 The various processes of the method embodiments shown can achieve the same technical effect, and will not be described again here to avoid repetition.

[0154] This application also provides a readable storage medium storing a program or instructions that, when executed by a processor, implement the steps of the cleaning method described above.

[0155] It should be noted that the various embodiments in this specification are described in a progressive manner, and the same or similar parts between the various embodiments can be referred to mutually. Each embodiment focuses on describing the differences from other embodiments. In particular, since the embodiments are basically similar to the product embodiments, the descriptions are relatively simple, and the relevant parts can be referred to the descriptions of the product embodiments.

[0156] Unless otherwise defined, the technical or scientific terms used in this disclosure shall have the ordinary meaning understood by one of ordinary skill in the art to which this disclosure pertains. The terms “first,” “second,” and similar terms used in this disclosure do not indicate any order, quantity, or importance, but are merely used to distinguish different components. Terms such as “comprising” or “including” mean that an element or object preceding the word encompasses the elements or objects listed following the word and their equivalents, without excluding other elements or objects. Terms such as “connected” or “linked” are not limited to physical or mechanical connections, but can include electrical connections, whether direct or indirect.

[0157] In the description of the above embodiments, specific features, structures, materials, or characteristics may be combined in any suitable manner in one or more embodiments or examples.

[0158] The above description is merely a specific embodiment of this disclosure, but the scope of protection of this disclosure is not limited thereto. Any variations or substitutions that can be easily conceived by those skilled in the art within the scope of the technology disclosed in this disclosure should be included within the scope of protection of this disclosure. Therefore, the scope of protection of this disclosure should be determined by the scope of the claims.

Claims

1. A cleaning device, characterized in that, include: The cleaning solution tank (1) has a accommodating space for accommodating the cleaning solution (2) and the wafer (3) to be cleaned. The toroidal Helmholtz coil (4) includes: two circular conductor coils with the same radius, the two conductor coils are coaxially arranged, and the distance between the two conductor coils is equal to the radius of the conductor coils, wherein the liquid tank (1) is arranged in the space between the two conductor coils, and the axis of the conductor coil is perpendicular to the wafer (3) in the liquid tank (1). A monitoring unit is installed in the liquid tank (1), and the monitoring unit is used to monitor the content data of at least one metal ion in the cleaning solution (2); The control unit is connected to the monitoring unit and the annular Helmholtz coil (4) respectively. The control unit is used to acquire the content data and / or the target information of the cleaning solution (2), and control the magnetic field strength of the magnetic field generated by the annular Helmholtz coil (4) according to the content data and / or the target information. The target information includes temperature information and / or drug solution ratio information.

2. The cleaning equipment according to claim 1, characterized in that, The monitoring unit includes a multi-parameter sensor array, which is immersed in the cleaning solution (2) in the medicine tank (1).

3. A cleaning method, characterized in that, The cleaning method, applied to the cleaning equipment as described in claim 1 or 2, comprises: Acquire the content data of at least one metal ion in the cleaning solution (2) monitored by the monitoring unit and / or the target information of the cleaning solution (2), wherein the target information includes temperature information and / or drug solution ratio information; Based on the content data of the at least one metal ion and / or the target information, determine the value of the target parameter corresponding to the cleaning solution (2), wherein the target parameter includes at least one of the following: concentration level coefficient, temperature level coefficient, ratio level coefficient and ion type weight; The target magnetic field strength is determined based on the values ​​of the target parameters; The magnetic field strength of the magnetic field generated by the toroidal Helmholtz coil (4) is controlled according to the target magnetic field strength.

4. The cleaning method according to claim 3, characterized in that, The determination of the target parameter value corresponding to the cleaning solution (2) based on the content data of the at least one metal ion and / or the target information includes at least one of the following: Based on the content data of the at least one metal ion, the ion type of each metal ion and the weight value corresponding to each ion type, the comprehensive content data of the cleaning solution (2) is determined, and based on the first preset rule and the concentration range to which the comprehensive content data belongs, the value of the concentration level coefficient corresponding to the cleaning solution (2) is determined. Based on the second preset rule and the temperature range to which the temperature information belongs, determine the value of the temperature grade coefficient corresponding to the cleaning fluid (2); Based on the third preset rule and the drug ratio range to which the drug ratio information belongs, determine the value of the ratio grade coefficient corresponding to the cleaning solution (2); Based on the content data of the at least one metal ion and the ion type to which each metal ion belongs, the concentration ratio corresponding to each ion type is determined, and based on the concentration ratio corresponding to each ion type and the weight value, the ion type weight value corresponding to the cleaning solution (2) is determined. The first preset rule includes the mapping relationship between the concentration range and the concentration level coefficient; The second preset rule includes the mapping relationship between the temperature range and the temperature level coefficient; The third preset rule includes the mapping relationship between the drug solution ratio range and the ratio grade coefficient.

5. The cleaning method according to claim 3, characterized in that, The control of the magnetic field strength generated by the toroidal Helmholtz coil (4) based on the target magnetic field strength includes: Determine the values ​​of the current parameters based on the target magnetic field strength; The magnetic field strength of the magnetic field generated by the toroidal Helmholtz coil (4) is controlled according to the value of the current parameter.

6. The cleaning method according to claim 5, characterized in that, The current parameters include at least one of the following: current direction, current frequency, and current intensity.

7. A cleaning device, characterized in that, Applied to the cleaning equipment as described in claim 1 or 2, comprising: The data acquisition module is used to acquire the content data of at least one metal ion in the cleaning solution (2) monitored by the monitoring unit and / or the target information of the cleaning solution (2), wherein the target information includes temperature information and / or drug solution ratio information; The first processing module is used to determine the value of the target parameter corresponding to the cleaning solution (2) based on the content data of the at least one metal ion and / or the target information. The target parameter includes at least one of the following: concentration level coefficient, temperature level coefficient, ratio level coefficient and ion type weight. The second processing module is used to determine the target magnetic field strength based on the value of the target parameter; The first control module is used to control the magnetic field strength of the magnetic field generated by the toroidal Helmholtz coil (4) according to the target magnetic field strength.

8. A control device, comprising a memory, a processor, and a computer program stored in the memory and executable on the processor; characterized in that, When the processor executes the computer program, it implements the cleaning method as described in any one of claims 3 to 6.

9. A computer program product, characterized in that, It includes computer instructions that, when executed by a processor, implement the steps of the cleaning method as described in any one of claims 3 to 6.

10. A readable storage medium having a program or instructions stored thereon, characterized in that, When the program or instructions are executed by the processor, they implement the steps of the cleaning method as described in any one of claims 3 to 6.