Metasurface Structures and Design Methods for Realizing Broadband Measurement Basis

By designing a combination of metasurface modulation layer, CMOS image sensor wafer layer and signal processing circuit layer, and generating and screening metasurface arrays, the problem of low spatial resolution in existing spectral imaging devices is solved, and efficient spectral reconstruction and spectral resolution improvement are achieved.

CN121677935BActive Publication Date: 2026-05-26TSINGHUA UNIVERSITY
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Patent Information

Authority / Receiving Office
CN · China
Patent Type
Patents(China)
Current Assignee / Owner
TSINGHUA UNIVERSITY
Filing Date
2026-02-11
Publication Date
2026-05-26

AI Technical Summary

Technical Problem

Existing metasurface micro-spectral imaging devices, while ensuring spectral resolution, have low spatial resolution, making it difficult to achieve efficient spectral reconstruction.

Method used

A metasurface structure is designed, comprising a metasurface modulation layer, a CMOS image sensor wafer layer, and a signal processing circuit layer. By generating multiple metasurface arrays with different structural features, performing random combinations and electromagnetic simulation calculations, metasurface modulation units that meet the spectral reconstruction target are selected to form a composite metasurface structure.

Benefits of technology

It improves the spatial resolution of spectral imaging equipment, reduces the number of sampling units required for spectral reconstruction, enhances the resolution and design freedom of spectral imaging, and is suitable for complex spectral reconstruction scenarios.

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Abstract

This invention provides a metasurface structure and design method for realizing broadband measurement substrates, relating to the field of micro-spectral imaging technology. It enables spectral imaging devices to achieve higher spatial resolution while maintaining spectral resolution. The metasurface structure includes a metasurface modulation layer, a CMOS image sensor wafer layer, and a signal processing circuit layer. The metasurface modulation layer comprises multiple metasurface modulation units, each independently performing broadband modulation of incident light. The transmission spectrum corresponding to each metasurface modulation unit includes multiple absorption peaks. The CMOS image sensor wafer layer receives the optical signal encoded by the multiple metasurface modulation units of the metasurface modulation layer and converts the optical signal into an electrical signal. The signal processing circuit layer processes the electrical signal from the CMOS image sensor wafer layer to obtain the transmission spectrum corresponding to each metasurface modulation unit.
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