Heat-insulating transparent perovskite photovoltaic module and preparation method thereof

Abstract

The invention relates to a heat-insulating transparent perovskite photovoltaic module and a preparation method thereof, and the method comprises the steps: depositing ITO on a glass surface of a transparent substrate through magnetron sputtering, and forming an anode substrate; cleaning the surface of the anode substrate; the anode substrate is dried after being cleaned; carrying out overall cleaning on the dried anode substrate; preparing a hole transport layer on the integrally cleaned anode substrate; preparing a perovskite layer on the hole transport layer; preparing an electron transport layer on the perovskite layer; preparing a hole blocking layer on the electron transport layer; preparing a cathode layer on the hole barrier layer; tiO2 and CaF2 are arranged on the cathode layer through vacuum evaporation, and the infrared reflector is formed. By means of the arrangement, the combination with the highest infrared reflectivity can be screened out from hundreds of thousands of combinations through a high-throughput screening method, reflection of the photovoltaic module to infrared light is increased while visible light transmission is guaranteed, and the infrared heat insulation performance of the photovoltaic module is improved.

Description

Technical Field

[0001] This invention relates to the field of perovskite technology, and in particular to a heat-insulating and transparent perovskite photovoltaic module and its preparation method. Background Technology

[0002] Semi-transparent photovoltaic (PV) modules are attracting increasing attention due to their potential applications in areas such as power-generating windows and building-integrated photovoltaics (BIPV). Currently, solar energy collection systems in BIPV primarily consist of traditional silicon PV modules, which are limited by their opacity, such as their inability to replace glass curtain walls in buildings. In this regard, the emergence of transparent perovskite PV modules offers a promising alternative to power-generating windows, providing both high-efficiency power generation and transparency. With continuous optimization of the various functional layers in perovskite PV modules, breakthroughs have been achieved in the power conversion efficiency (PCE) of opaque modules. By replacing the opaque top electrode with a semi-transparent electrode made of ultra-thin metal, good light utilization efficiency can be achieved by increasing transmittance with a slight loss in PCE. However, due to the absorption edge of perovskite materials, the absorption and reflectivity of other layers in existing perovskite PV modules are limited, resulting in low reflectivity of perovskite PV modules for infrared radiation. Summary of the Invention

[0003] In view of this, this application provides a heat-insulating and transparent perovskite photovoltaic module and its preparation method. Combined with high-throughput computing, a perovskite photovoltaic module that achieves a balance between PCE and transparency and improves infrared reflectivity was screened.

[0004] According to one aspect of this application, a method for fabricating a heat-insulating transparent perovskite photovoltaic module is provided, comprising a transparent substrate, an anode layer, a hole transport layer, a perovskite layer, an electron transport layer, a hole blocking layer, a cathode layer, and an infrared reflector; the specific steps are as follows: S1: ITO is deposited on the glass surface of the transparent substrate by magnetron sputtering to form an anode layer, and the anode layer and the transparent substrate form an anode substrate; S2: The surface of the anode substrate is cleaned; S3: The anode substrate is dried after cleaning; S4: The dried anode substrate is thoroughly cleaned; S5: The thoroughly cleaned anode substrate... S6: Prepare a hole transport layer on the hole transport layer; S7: Prepare an electron transport layer on the perovskite layer; S8: Prepare a hole blocking layer on the electron transport layer; S9: Sequentially deposit ITO, Cu, and ITO on the hole blocking layer using a high-precision magnetron sputtering process to form a cathode layer; S10: Vacuum evaporate TiO2 onto the cathode layer to form a TiO2 thin film, and vacuum evaporate CaF2 onto the TiO2 thin film to form a CaF2 thin film. The TiO2 thin film and the CaF2 thin film form an infrared reflector.

[0005] In one possible implementation, the surface of the anode substrate is cleaned using detergent, deionized water, acetone, and isoacetone as cleaning agents. The specific cleaning steps include: filling the cleaning machine with detergent to perform a first cleaning of the anode substrate surface; filling the cleaning machine with deionized water to perform a second cleaning of the anode substrate surface; filling the cleaning machine with acetone to perform a third cleaning of the anode substrate surface; and filling the cleaning machine with isoacetone to perform a fourth cleaning of the anode substrate surface.

[0006] In one possible implementation, the anode substrate is dried after cleaning and placed in a high-temperature drying oven at 80°C for drying.

[0007] In one possible implementation, ITO, Cu, and ITO are sequentially deposited on the hole blocking layer using a high-precision magnetron sputtering process to form a first ITO electrode layer, a Cu electrode layer, and a second ITO electrode layer, respectively, to form a cathode layer. The thickness of the first ITO electrode layer and the second ITO electrode layer is 20~60 nm, and the thickness of the Cu electrode layer is 5~15 nm.

[0008] In one possible implementation, TiO2 is vacuum-deposited onto the cathode layer to form a TiO2 thin film, and CaF2 is vacuum-deposited onto the TiO2 thin film to form a CaF2 thin film. The TiO2 thin film and the CaF2 thin film form an infrared reflector, and the vacuum deposition rate is 2 Å / s, the thickness of the deposited TiO2 thin film is 95 nm, and the thickness of the deposited CaF2 thin film is 105 nm.

[0009] In one possible approach, a perovskite precursor material is dissolved in DMF:DMSO to prepare a perovskite precursor solution. The prepared perovskite precursor solution is then uniformly deposited onto the hole transport layer using a slot coating process to form a perovskite layer.

[0010] In one possible implementation, during the preparation of the perovskite layer, the coating gap is 80–160 μm, the coating speed is 10–50 mm / s, the vacuum flash evaporation time is 60–180 s, and the annealing conditions are annealing at 150 °C for 5–20 min.

[0011] In one possible implementation, C 60 An electron transport layer was fabricated by vacuum evaporation deposition on a perovskite layer, and C 60 The film thickness is 20~70 nm.

[0012] In one possible implementation, BCP is deposited on the electron transport layer by vacuum evaporation to form a hole blocking layer, and the thickness of the BCP film is 5~15 nm.

[0013] A heat-insulating transparent perovskite photovoltaic module is prepared according to the preparation method described above, and the heat-insulating transparent perovskite photovoltaic module with the highest infrared reflectivity is selected by a high-throughput screening method.

[0014] The beneficial effects of the present invention are as follows: The heat-insulating and transparent perovskite photovoltaic module prepared by the above method can select the combination with the highest infrared reflectivity from hundreds of thousands of combinations through a high-throughput screening method. While ensuring visible light transmission, it increases the reflection of infrared light by the photovoltaic module and improves the infrared heat insulation performance of the photovoltaic module. Attached Figure Description

[0015] Figure 1 This is a detailed structural diagram of the heat-insulating and transparent perovskite photovoltaic module in this embodiment; Figure 2 This is a scatter plot of the average visible light transmittance, short-circuit current density, and infrared reflectance of the heat-insulating and transparent perovskite photovoltaic module in this embodiment. Figure 3 Optical field distribution diagram for reference component; Figure 4 This is the optical field distribution diagram of this embodiment; Figure 5 The transmittance spectrum is for reference components and this embodiment; Figure 6 Infrared thermal images of metal objects placed on glass, reference components, and after this embodiment, respectively, after being exposed to sunlight; Figure 7 The photoelectric conversion efficiency of the reference component and this embodiment. Detailed Implementation

[0016] The technical solutions of the present invention will be clearly and completely described below with reference to the accompanying drawings of the embodiments of the present invention. Obviously, the described embodiments are only some embodiments of the present invention, and not all embodiments.

[0017] Examples of the embodiments are shown in the accompanying drawings, wherein the same or similar symbols denote the same or similar elements or elements having the same or similar functions throughout. The embodiments described below with reference to the accompanying drawings are exemplary and intended to explain the invention, and should not be construed as limiting the invention.

[0018] In the description of this invention, it should be understood that the terms "center," "longitudinal," "lateral," "length," "width," "upper," "lower," "front," "rear," "left," "right," "vertical," "horizontal," "top," "bottom," "inner," "outer," "clockwise," "counterclockwise," "axial," "radial," and "circumferential" indicate the orientation or positional relationship based on the orientation or positional relationship shown in the accompanying drawings. They are used only for the convenience of describing this invention or to simplify the description, and do not indicate or imply that the device or element referred to must have a specific orientation, or be constructed and operated in a specific orientation. Therefore, they should not be construed as limitations on this invention.

[0019] Furthermore, the terms "first" and "second" are used for descriptive purposes only and should not be construed as indicating or implying relative importance or implicitly specifying the number of technical features indicated. Thus, a feature defined as "first" or "second" may explicitly or implicitly include one or more of that feature. In the description of this invention, "a plurality of" means two or more, unless otherwise explicitly specified.

[0020] In this invention, unless otherwise explicitly specified and limited, the terms "installation," "connection," "joining," "fixing," "linking," "hinging," etc., should be interpreted broadly. For example, they can refer to a fixed connection, a detachable connection, or an integral part; they can refer to a mechanical connection or an electrical connection; they can refer to a direct connection or an indirect connection through an intermediate medium; they can refer to the internal communication of two components or the interaction between two components. Those skilled in the art can understand the specific meaning of the above terms in this invention according to the specific circumstances.

[0021] like Figures 1 to 2As shown, the fabrication method of the heat-insulating transparent perovskite photovoltaic module includes a transparent substrate 100, an anode layer 200, a hole transport layer 300, a perovskite layer 400, an electron transport layer 500, a hole blocking layer 600, a cathode layer 700, and an infrared reflector 800. The specific steps are as follows: S1: ITO is magnetron sputtered onto the glass surface of the transparent substrate 100 to form the anode layer 200, which, together with the transparent substrate 100, forms the anode substrate; S2: The surface of the anode substrate is cleaned; S3: The anode substrate is dried after cleaning; S4: The dried anode substrate is thoroughly cleaned; S5: Hole transport layer 500 is formed on the thoroughly cleaned anode substrate. Preparation of hole transport layer 300; S6: Prepare perovskite layer 400 on hole transport layer 300; S7: Prepare electron transport layer 500 on perovskite layer 400; S8: Prepare hole blocking layer 600 on electron transport layer 500; S9: Sequentially deposit ITO, Cu, and ITO on hole blocking layer 600 using high-precision magnetron sputtering process to form cathode layer 700; S10: Vacuum evaporate TiO2 onto cathode layer 700 to form TiO2 thin film, vacuum evaporate CaF2 onto TiO2 thin film to form CaF2 thin film, TiO2 thin film and CaF2 thin film form infrared reflector 800.

[0022] Specifically, in addition to the transparent substrate 100, anode 200, hole transport layer 300, perovskite layer 400, electron transport layer 500, hole blocking layer 600 and cathode layer 700 arranged sequentially from bottom to top in the heat-insulating and transparent perovskite photovoltaic module, the module also includes an infrared reflector 800 composed of a first dielectric layer 810 and a second dielectric layer 820 arranged sequentially from bottom to top on the composite cathode.

[0023] More specifically, the transparent substrate 100 is a glass substrate, the anode layer 200 is ITO, and the hole transport layer 300 is NiO. X The precursor solvents for the perovskite layer 400 include DMF and DMSO, and the electron transport layer 500 is C. 60 The hole blocking layer 600 is BCP, the cathode layer 700 is ITO / Cu / ITO, the dielectric layer 810 is TiO2, and the dielectric layer 820 is CaF2.

[0024] Preferably, the perovskite layer 400 comprises a solution of AX and BX2; the A-site is composed of any cation selected from cesium, rubidium, potassium, amino, amidine, or a base group; the B-site is composed of any divalent metal cation selected from lead, tin, tungsten, copper, zinc, gallium, germanium, arsenic, selenium, rhodium, palladium, silver, cadmium, indium, antimony, osmium, iridium, platinum, gold, mercury, thallium, bismuth, and polonium; and the X-site is composed of chloride, bromine, iodine, thiocyanate, cyanide, oxocyanate, acetate, azide, borohydride, or Co(CO). 4-C(NO2) 3- C(CN) 3- It is composed of any anion in it.

[0025] It should be noted that the substrate serves as the supporting structure for the solar cell, and a transparent conductive anode is deposited on it as the electrode material to facilitate subsequent charge collection and transport. A hole transport layer is prepared on the anode to help holes be efficiently transported from the perovskite layer to the electrode. A perovskite precursor material is coated on the hole transport layer to form a perovskite light-absorbing layer. An electron transport material is deposited on the perovskite light-absorbing layer to form an electron transport layer, which helps electrons transport from the perovskite layer to the electrode layer. Then, a hole blocking layer is prepared on the electron transport layer to protect the perovskite layer and the electron transport layer and promote charge collection efficiency. A composite cathode is then deposited on the hole blocking layer as the top electrode for the entire solar cell. Finally, an infrared reflector composed of two dielectric layers is deposited on the composite cathode to reflect near-infrared light. The prepared perovskite photovoltaic cell is then encapsulated and tested. Encapsulation prevents the performance of the photovoltaic module from being affected by environmental conditions, such as changes in light and humidity. Performance testing of the encapsulated perovskite solar cell is also required, including photoelectric conversion efficiency (PCE) and short-circuit current density (SCD). J SC ), open circuit voltage ( V OC The parameters used to evaluate the photovoltaic module's photoelectric conversion efficiency, thermal insulation performance, light transmittance, and stability are: fill factor (FF), visible light average transmittance (AVT), and infrared reflectance (IRR).

[0026] In one possible implementation, the anode substrate is fabricated as follows: ITO is deposited on the glass surface of a transparent substrate 100 by magnetron sputtering to form an anode layer 200. The anode layer 200 and the transparent substrate 100 form an anode substrate. The surface of the anode substrate is cleaned using detergent, deionized water, acetone, and isoacetone. The specific cleaning steps include: filling the cleaning machine with detergent to perform the first cleaning of the anode substrate surface, filling the cleaning machine with deionized water to perform the second cleaning of the anode substrate surface, filling the cleaning machine with acetone to perform the third cleaning of the anode substrate surface, and filling the cleaning machine with isoacetone to perform the fourth cleaning of the anode substrate surface.

[0027] More specifically, after cleaning, the anode substrate is dried and placed in a high-temperature drying cabinet at 80°C for drying.

[0028] In one possible implementation, the cathode layer 700 is fabricated as follows: ITO, Cu, and ITO are sequentially deposited on the hole blocking layer 600 by a high-precision magnetron sputtering process to form a first ITO electrode layer 710, a Cu electrode layer 720, and a second ITO electrode layer 730, respectively, to form a cathode layer 700. The thickness of the first ITO electrode layer 710 and the second ITO electrode layer 730 is 20~60 nm, and the thickness of the Cu electrode layer 720 is 5~15 nm.

[0029] In one possible implementation, the infrared reflector 800 is fabricated as follows: TiO2 is vacuum-deposited onto the cathode layer 700 to form a TiO2 thin film, which is the first dielectric layer 810. CaF2 is then vacuum-deposited onto the TiO2 thin film to form a CaF2 thin film, which is the second dielectric layer 820. The TiO2 thin film and the CaF2 thin film together form an infrared reflector 800. The vacuum deposition rate is 2 Å / s, the thickness of the deposited TiO2 thin film is 95 nm, and the thickness of the deposited CaF2 thin film is 105 nm.

[0030] In one possible approach, a perovskite precursor material is dissolved in DMF:DMSO to prepare a perovskite precursor solution. The prepared perovskite precursor solution is then uniformly deposited onto the hole transport layer using a slot coating process to form a perovskite layer.

[0031] In one possible implementation, during the preparation of the perovskite layer, the coating gap is 80–160 μm, the coating speed is 10–50 mm / s, the vacuum flash evaporation time is 60–180 s, and the annealing conditions are annealing at 150 °C for 5–20 min.

[0032] In one possible implementation, C 60 An electron transport layer was fabricated by vacuum evaporation deposition on a perovskite layer, and C 60 The film thickness is 20~70 nm.

[0033] In one possible implementation, BCP is deposited on the electron transport layer by vacuum evaporation to form a hole blocking layer, and the thickness of the BCP film is 5~15 nm.

[0034] A heat-insulating transparent perovskite photovoltaic module is prepared according to the preparation method described above, and the heat-insulating transparent perovskite photovoltaic module with the highest infrared reflectivity is selected by a high-throughput screening method.

[0035] The high-throughput screening method specifically includes: Using the transfer matrix method and input parameters, the visible light average transmittance (AVT) and short-circuit current density of infrared-insulated transparent perovskite photovoltaic modules were obtained. JSC Infrared reflectance (IRR); The input parameters include: the thicknesses of the anode, hole transport layer, perovskite layer, electron transport layer, hole blocking layer, composite cathode, first dielectric layer 810, and second dielectric layer 820. d refractive index n and extinction coefficient k ; Specifically, the thickness of the first dielectric layer 810... d 1. Divide the dielectric layer into sections from 0 to 200 nm, with 5 nm intervals; the refractive index of the first dielectric layer 810 is... n 1. Divide the thickness from 1.3 to 2.5, with intervals of 0.1; the thickness of the second dielectric layer 820 is... d 2 The range is divided into 0–200 nm, with 5 nm intervals; the refractive index of the second dielectric layer 820 is... n 2. The values ​​are divided from 1.3 to 2.5, with an interval of 0.1; at the same time, the extinction coefficients of the two dielectric layers are considered to be 0. The method for obtaining the average visible light transmittance (AVT) is as follows: In the formula: Indicates wavelength; This represents the solar energy distribution spectrum at AM 1.5G. Represents the CIE standard spectral luminous efficiency function; Indicates the transmittance of infrared heat-insulating transparent perovskite photovoltaic; The function is related to all variables in the simulation; The short-circuit current density ( J SC The method to obtain ) is as follows: In the formula: Represents the vacuum permittivity; Represents the speed of light; , These represent the refractive index and extinction coefficient of the perovskite layer, respectively; x Indicates the location of the electric field within the perovskite layer; Indicates the distribution of the optical field; h It is Planck's constant; Among them, EQE is achieved through the electric field strength in the perovskite layer. E The calculated electric field strength E It relates to all variables in the simulation structure; The infrared reflectance (IRR) is obtained as follows: The high-throughput screening model is written as a simulation program in Python. The simulation program iterates through all... d 1. n 1. d 2 and n The combination of 2 will ultimately be output as text, with the output format being: AVT + "" + J SC + “” + IRR+ “”+ n 1+ “” + n 1+ “” + d 1+ “” + d 2; Then, among all the filtered results, using AVT as the first coordinate and... J SC Plot AVT- using IRR as the second coordinate and IRR as the third coordinate. J SC -IRR scatter plot. In AVT- J SC Further filtering was performed on the -IRR scatter plot to obtain the thickness and material type of the two dielectric layers.

[0036] like Figure 2 As shown, after high-throughput screening, among 284,089 possible combinations, when the first dielectric layer 810 is preferably made of 95 nm CaF2 with a refractive index of 1.4 and the second dielectric layer 820 is preferably made of 105 nm TiO2 with a refractive index of 2.4, the AVT decreases from 18.34% in the reference example to 16.31% in this embodiment. J SC It will be from the reference example of 15.59 mA cm -2 Increased to 15.76 mA cm⁻¹ in this embodiment. -2 The IRR will increase from 76.45% in the reference example to 86.32% in this example.

[0037] like Figure 3 , Figure 4 As shown, when the first dielectric layer 810 is preferably CaF2 with a refractive index of 1.4 at 95 nm and the second dielectric layer 820 is TiO2 with a refractive index of 2.4 at 105 nm, this embodiment exhibits stronger reflection in the 780-2500 nm range compared to the reference example, corresponding to a higher IRR.

[0038] like Figure 5As shown, when the first dielectric layer 810 is preferably CaF2 with a refractive index of 1.4 at 95 nm and the second dielectric layer 820 is TiO2 with a refractive index of 2.4 at 105 nm, this embodiment has a lower transmittance in the 780-2500 nm range compared to the reference example, corresponding to a higher IRR.

[0039] like Figure 6 From left to right, these are infrared thermal images of metal objects placed behind glass, a reference example, and this example, respectively, after being exposed to sunlight. When the first dielectric layer 810 is preferably 95 nm CaF2 with a refractive index of 1.4 and the second dielectric layer 820 is 105 nm TiO2 with a refractive index of 2.4, the metal object placed behind the infrared-insulating transparent perovskite photovoltaic module has a lower temperature and a corresponding higher IRR.

[0040] like Figure 7 As shown, the JV curves of the reference example and this embodiment are shown. The JV curves show that, through high-throughput calculations, based on the optical coupling layer structure of the first dielectric layer 810 / second dielectric layer 820, the selected materials and preparation processes can slightly improve the performance of the perovskite photovoltaic module while enhancing its infrared heat insulation characteristics.

[0041] The specific data for the JV curve are shown in Table 1 below: Table 1: The above description is only a preferred embodiment of the present invention, but the scope of protection of the present invention is not limited thereto. Any equivalent substitutions or modifications made by those skilled in the art within the scope disclosed in the present invention, based on the technical solution and concept of the present invention, should be covered within the scope of protection of the present invention.

Claims

1. A method for preparing a thermally insulated transparent perovskite photovoltaic module, characterized in that, The infrared reflective mirror comprises a transparent substrate, an anode layer, a hole transport layer, a perovskite layer, an electron transport layer, a hole blocking layer, a cathode layer and an infrared reflective mirror. The specific steps are as follows: S1: depositing ITO on the glass surface of the transparent substrate by magnetron sputtering to form an anode layer, and the anode layer and the transparent substrate form an anode substrate; S2: cleaning the surface of the anode substrate; S3: drying the anode substrate after cleaning; S4: overall cleaning of the dried anode substrate; S5: preparing a hole transport layer on the anode substrate after overall cleaning; S6: preparing a perovskite layer on the hole transport layer; S7: preparing an electron transport layer on the perovskite layer; S8: preparing a hole blocking layer on the electron transport layer; S9: depositing ITO, Cu and ITO on the hole blocking layer in sequence by high-precision magnetron sputtering process to form a cathode layer; S10: vacuum evaporating TiO2 on the cathode layer to form a TiO2 film, vacuum evaporating CaF2 on the TiO2 film to form a CaF2 film, and the TiO2 film and the CaF2 film form an infrared reflective mirror.

2. The method of claim 1, wherein the transparent perovskite photovoltaic module is a solar cell. The surface of the anode substrate is cleaned, and the cleaning agent is washing-up liquid, deionized water, acetone and isopropyl alcohol; The specific cleaning steps include: pouring washing-up liquid into the cleaning machine, cleaning the surface of the anode substrate for the first time, then pouring deionized water into the cleaning machine, cleaning the surface of the anode substrate for the second time, then pouring acetone into the cleaning machine, cleaning the surface of the anode substrate for the third time, and then pouring isopropyl alcohol into the cleaning machine, cleaning the surface of the anode substrate for the fourth time.

3. The method of claim 2, wherein the method further comprises, The anode substrate is dried after cleaning, and the anode substrate is placed in a high-temperature drying cabinet with a temperature of 80℃ for drying treatment.

4. The method of claim 3, wherein the method further comprises, ITO, Cu and ITO are deposited on the hole blocking layer in sequence by high-precision magnetron sputtering process to form a cathode layer, which are a first ITO electrode layer, a Cu electrode layer and a second ITO electrode layer respectively, and the thickness of the first ITO electrode layer and the second ITO electrode layer is 20-60 nm, and the thickness of the Cu electrode layer is 5-15 nm.

5. The method of claim 4, wherein the method further comprises, TiO2 is vacuum evaporated on the cathode layer to form a TiO2 film, CaF2 is vacuum evaporated on the TiO2 film to form a CaF2 film, and the TiO2 film and the CaF2 film form an infrared reflective mirror, and the vacuum evaporation rate is 2 angstroms per second, the thickness of the deposited TiO2 film is 95 nm, and the thickness of the deposited CaF2 film is 105 nm.

6. The method of claim 1-5, wherein the method further comprises, The perovskite precursor material is dissolved in DMF:DMSO to prepare a perovskite precursor solution. The prepared perovskite precursor solution is uniformly deposited on the hole transport layer by a slot coating process to form a perovskite layer.

7. The method of producing a thermally insulated transparent perovskite photovoltaic module according to claim 6, characterized in that, In the preparation of the perovskite layer, the coating gap is 80-160 microns, the coating speed is 10-50 mm / s, and the vacuum flash evaporation time is 60-180 seconds; the annealing condition is 150℃ for 5-20 minutes.

8. The method of claim 7, wherein the method further comprises, C 60 An electron transport layer is prepared by vacuum evaporation deposition on the perovskite layer, and the thin film thickness of C 60 is 20-70 nm.

9. The method of claim 8, wherein the method further comprises, BCP is deposited on the electron transport layer by vacuum evaporation to prepare a hole blocking layer, and the thickness of the BCP film is 5-15 nm.

10. An insulated transparent perovskite photovoltaic module, characterized in that, The heat-insulating transparent perovskite photovoltaic module with the highest infrared reflectivity is prepared by the preparation method according to any one of claims 1-9 and is screened out by a high-throughput screening method.

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