Method and device for simulating micro-capacitance change characteristics of metal resonator gyroscope

Abstract

The invention discloses a method and a device for simulating micro-capacitance change characteristics of a metal resonant gyroscope. The method comprises the following steps: establishing a multi-unit simulation model based on a sensitive structure, an elastic supporting structure and a fixed structure of the metal resonant gyroscope; performing grid division on the multi-unit model to obtain node position information, and calculating infinitesimal displacement of each node in a vibration process based on the node position information by utilizing an external force excitation condition and a boundary constraint condition to obtain displacement data; calculating the distance change between adjacent electrodes based on the displacement data, and solving a corresponding micro-capacitance change value based on the distance change in combination with the geometric parameters of the electrodes; and driving the on-off state of an ARM control switch according to a preset threshold value or a control algorithm based on the micro-capacitance change value so as to realize acquisition or feedback control of a micro-capacitance signal. The invention solves the technical problem that the existing capacitance detection circuit is difficult to realize stable reading with high sensitivity, low noise and wide dynamic range.

Description

Technical Field

[0001] This invention relates to the field of metal resonant gyroscopes, and more specifically, to a method and apparatus for simulating the microcapacitance variation characteristics of a metal resonant gyroscope. Background Technology

[0002] Metal resonant gyroscopes are a typical type of solid-state vibrating gyroscope device, whose sensitive resonator is usually made of metal. The resonator of this type of gyroscope is small in size, and the amplitude of the output variable capacitance signal is extremely weak, making high-precision measurement difficult. To improve detection sensitivity, existing technologies generally employ electrostatic excitation and electrostatic detection methods, obtaining angular velocity information by monitoring the minute capacitance changes caused by the vibration of the resonator. However, the output capacitance of metal micro-hemispherical resonant gyroscopes is generally in the picofarad range or even lower, making them susceptible to circuit noise interference. This places higher demands on the noise performance, gain capability, and dynamic range of the detection circuit. Therefore, how to achieve a capacitance detection circuit with high sensitivity, low noise, and wide dynamic range has become a key issue in the design of metal micro-hemispherical resonant gyroscopes.

[0003] To meet the demands of high-precision vibration sensing, current research has long focused on capacitance detection technology for resonant gyroscopes, primarily involving capacitance detection models for hemispherical gyroscopes, interface circuit design for mechanical vibrating gyroscopes, and detection methods for multi-electrode structures. Compared to traditional hemispherical gyroscopes, novel bell-shaped gyroscopes achieve angular velocity sensing based on the Coriolis effect, with a much smaller oscillator amplitude of approximately 120 nm, an order of magnitude lower than that of hemispherical gyroscopes. Simultaneously, their higher vibration frequency and unique capacitance structure further increase the difficulty of capacitance detection, necessitating higher-performance detection circuits and readout architectures.

[0004] In recent years, gyroscope capacitance detection technology has continued to develop. Early research proposed ASIC interface circuits based on closed-loop capacitance detection, providing a basic capacitance readout scheme for metal resonant gyroscopes. Subsequently, high-Q bell-shaped oscillator structures, curved capacitor plate designs, multi-chip packaging technology, and high-resolution CMOS capacitance readout chips emerged, enabling capacitance detection sensitivity to continuously improve over the past decade, gradually reaching the alpha level from the picofarad level, laying the technological foundation for tactical and even strategic applications. In recent years, the readout and packaging processes of domestically produced bell-shaped gyroscopes have also made significant progress, including high-Q oscillator fabrication, hybrid integrated ASICs, stable detection of capacitance changes at the 0.01 pF level, and breakthroughs in vacuum packaging technology, bringing the overall performance of resonant gyroscope capacitance detection to new heights.

[0005] In a typical capacitance detection architecture, the detection circuit usually includes a variable capacitor network, a voltage divider network, and an instrumentation amplifier module. It amplifies, filters, and differentially processes the electrical signal caused by the capacitance changing with the resonant state, converting the weak capacitance change into a measurable proportional voltage. Newer detection schemes tend to employ switching control, modulation / demodulation, and differential amplification to improve noise performance and enhance the discriminability of minute signals, playing a crucial role in improving the accuracy of inertial measurements.

[0006] Against this backdrop, in view of the minute changes in capacitance of the metal micro-hemispherical resonator during operation with the resonance state, it is necessary to design a more efficient, low-noise detection circuit with strong capacitance resolution, and to verify its feasibility through simulation and experimentation, so as to ensure that it can meet the high requirements of the new resonant gyroscope for variable capacitance detection.

[0007] There is currently no effective solution to the above problems. Summary of the Invention

[0008] This invention provides a method and apparatus for simulating the microcapacitance variation characteristics of a metal resonant gyroscope, thereby at least solving the technical problem that existing capacitance detection circuits are unable to achieve stable readout with high sensitivity, low noise, and wide dynamic range.

[0009] According to one aspect of the present invention, a method for simulating the microcapacitance variation characteristics of a metal resonant gyroscope is provided, comprising: establishing a multi-element simulation model based on the sensitive structure, elastic support structure, and fixed structure of the metal resonant gyroscope; dividing the multi-element model into a mesh to obtain node position information; calculating the minute displacement of each node during vibration based on the node position information using external force excitation conditions and boundary constraint conditions to obtain displacement data; calculating the distance change between adjacent electrodes based on the displacement data, and solving for the corresponding microcapacitance change value based on the distance change and combined with electrode geometric parameters; and driving the ARM control switch to switch on and off based on the microcapacitance change value according to a preset threshold or control algorithm to realize the acquisition or feedback control of the microcapacitance signal.

[0010] According to another aspect of the present invention, an apparatus for simulating the microcapacitance variation characteristics of a metal resonant gyroscope is also provided, comprising: a construction module configured to establish a multi-element simulation model based on the sensitive structure, elastic support structure, and fixed structure of the metal resonant gyroscope; a calculation module configured to mesh the multi-element model to obtain node position information, and calculate the minute displacement of each node during vibration based on the node position information using external force excitation conditions and boundary constraint conditions to obtain displacement data; a solution module configured to calculate the distance change between adjacent electrodes based on the displacement data, and solve for the corresponding microcapacitance change value based on the distance change and combined with electrode geometric parameters; and a driving module configured to drive the ARM control switch to switch on and off based on the microcapacitance change value according to a preset threshold or control algorithm, so as to realize the acquisition or feedback control of the microcapacitance signal.

[0011] In this embodiment of the invention, a multi-element simulation model is established based on the sensitive structure, elastic support structure, and fixed structure of the metal resonant gyroscope. The multi-element model is meshed to obtain node position information. Based on this node position information, the minute displacements of each node during vibration are calculated using external force excitation conditions and boundary constraints, yielding displacement data. Based on this displacement data, the distance change between adjacent electrodes is calculated, and based on this distance change and the electrode geometric parameters, the corresponding micro-capacitance change value is solved. Based on the micro-capacitance change value, according to a preset threshold or control algorithm, the on / off state of the ARM control switch is driven to achieve the acquisition or feedback control of the micro-capacitance signal. This solution solves the technical problem that existing capacitance detection circuits struggle to achieve stable readouts with high sensitivity, low noise, and a wide dynamic range. Attached Figure Description

[0012] The accompanying drawings, which are included to provide a further understanding of the invention and form part of this application, illustrate exemplary embodiments of the invention and, together with their description, serve to explain the invention and do not constitute an undue limitation thereof. In the drawings:

[0013] Figure 1 This is a flowchart of an optional method for simulating the microcapacitance variation characteristics of a metal resonant gyroscope according to an embodiment of the present invention;

[0014] Figure 2 This is a flowchart of another optional method for simulating the microcapacitance variation characteristics of a metal resonant gyroscope according to an embodiment of the present invention;

[0015] Figure 3 This is an optional planar capacitor model according to an embodiment of the present invention;

[0016] Figure 4 This is an optional four-switch state transition diagram according to an embodiment of the present invention;

[0017] Figure 5 This is an optional capacitance variation graph within one cycle according to an embodiment of the present invention;

[0018] Figure 6 This is an optional switching circuit design diagram according to an embodiment of the present invention;

[0019] Figure 7 This is a flowchart of the program implementation according to an embodiment of the present invention;

[0020] Figure 8 This is a circuit implementation flowchart according to an embodiment of the present invention;

[0021] Figure 9 This is a simulation test diagram according to an embodiment of the present invention;

[0022] Figure 10 According to the embodiments of the present invention, the non-access is hour Simulation diagram of voltage across both ends;

[0023] Figure 11 This is an embodiment of the present invention. Simulation diagram of the voltage across the voltage divider resistor without a switch;

[0024] Figure 12 This is a physical diagram of the system detection according to an embodiment of the present invention;

[0025] Figure 13 This is an embodiment of the present invention. and hour Output simulation results;

[0026] Figure 14 According to an embodiment of the present invention Collector interference diagram during amplified output;

[0027] Figure 15 This is a device for simulating the microcapacitance variation characteristics of a metal resonant gyroscope according to an embodiment of the present invention;

[0028] Figure 16 A schematic diagram of the structure of a computer device suitable for implementing embodiments of the present disclosure is shown. Detailed Implementation

[0029] To enable those skilled in the art to better understand the present invention, the technical solutions of the present invention will be clearly and completely described below with reference to the accompanying drawings of the embodiments of the present invention. Obviously, the described embodiments are only some embodiments of the present invention, and not all embodiments. Based on the embodiments of the present invention, all other embodiments obtained by those skilled in the art without creative effort should fall within the scope of protection of the present invention.

[0030] It should be noted that the terms "first," "second," etc., in the specification, claims, and accompanying drawings of this invention are used to distinguish similar objects and are not necessarily used to describe a specific order or sequence. It should be understood that such data can be interchanged where appropriate so that the embodiments of the invention described herein can be implemented in orders other than those illustrated or described herein. Furthermore, the terms "comprising" and "having," and any variations thereof, are intended to cover a non-exclusive inclusion; for example, a process, method, system, product, or apparatus that comprises a series of steps or units is not necessarily limited to those steps or units explicitly listed, but may include other steps or units not explicitly listed or inherent to such processes, methods, products, or apparatus.

[0031] According to an embodiment of the present invention, a method embodiment for simulating the microcapacitance variation characteristics of a metal resonant gyroscope is provided. It should be noted that the steps shown in the flowchart in the accompanying drawings can be executed in a computer system such as a set of computer-executable instructions. Furthermore, although a logical order is shown in the flowchart, in some cases, the steps shown or described may be executed in a different order than that shown here.

[0032] Figure 1 This is a method for simulating the microcapacitance variation characteristics of a metal resonant gyroscope according to an embodiment of the present invention, such as... Figure 1 As shown, the method includes the following steps:

[0033] Step S102: Based on the sensitive structure, elastic support structure and fixed structure of the metal resonant gyroscope, a multi-unit simulation model is established.

[0034] For example, the sensitive structure of the metal resonant gyroscope is discretized into several finite element elements, and corresponding material properties and geometric parameters are assigned to each finite element element; the elastic support structure of the metal resonant gyroscope is discretized into finite element elements, and an elastic modulus and damping coefficient are set for each finite element element; the fixed structure of the metal resonant gyroscope is discretized into finite element elements, and fixed boundary conditions are set to limit the constraints of the overall model; the connection relationship between the finite element elements of the sensitive structure, the finite element elements of the elastic support structure, and the fixed structure is established to obtain the multi-element model.

[0035] Step S104: Mesh the multi-element model to obtain node position information. Based on the node position information, calculate the small displacement of each node during the vibration process using external force excitation conditions and boundary constraint conditions to obtain displacement data.

[0036] For example, the multi-element simulation model is meshed according to a preset element size to generate a set of nodes, and spatial coordinate information is determined for each node to obtain node position information data; external force excitation conditions are applied to the multi-element model, and preliminary response data of each node after being subjected to external force is calculated, wherein the external force excitation conditions include driving force, vibration frequency, and direction information; based on the node position information data and the preliminary response data, boundary constraint conditions are applied to the nodes of the fixed structure and the elastic support structure to adjust the node degrees of freedom and obtain constrained node response data; the constrained node response data is calculated using the finite element analysis method to solve for the small displacement of each node during the vibration process and obtain the displacement data.

[0037] Step S106: Based on the displacement data, calculate the distance change between adjacent electrodes, and based on the distance change and the electrode geometric parameters, solve for the corresponding microcapacitance change value.

[0038] For example, based on the displacement data, the distance change between adjacent electrodes in the sensitive structure during vibration is calculated to obtain distance change data; the distance change data is combined with the geometric parameters of each electrode to establish a capacitance model and obtain a microcapacitance calculation formula, wherein the geometric parameters include at least one of the following: electrode area, initial spacing between electrodes; the microcapacitance calculation formula is used to solve the distance change data to obtain the microcapacitance change value corresponding to each pair of electrodes.

[0039] Step S108: Based on the microcapacitance change value, according to a preset threshold or control algorithm, drive the ARM control switch to control the on / off state, so as to realize the acquisition or feedback control of the microcapacitance signal.

[0040] For example, the microcapacitance change value is compared and calculated with a preset threshold or control algorithm to obtain control signal data; based on the control signal data, a corresponding switch on / off command is generated, and the state of the ARM control switch is changed; under the action of the switch, the microcapacitance change is collected or feedback control is performed to obtain real-time microcapacitance signal data, so as to realize the collection or feedback control of the microcapacitance signal.

[0041] After obtaining the real-time microcapacitor signal data, the real-time microcapacitor signal data is digitally filtered to obtain filtered microcapacitor signal data. The filtered microcapacitor signal data is then normalized and corrected in conjunction with the initial value of the microcapacitor or system calibration parameters to obtain normalized and calibrated microcapacitor signal data. Based on the normalized and calibrated microcapacitor signal data, the required feature parameters are extracted to obtain microcapacitor feature data, and the microcapacitor feature data is output for subsequent analysis, control algorithms, or closed-loop feedback control.

[0042] This application provides another method for simulating the microcapacitance variation characteristics of a metal resonant gyroscope, such as... Figure 2 As shown, the method includes the following steps:

[0043] Step S202: Construct a metal micro-hemispherical resonant gyroscope architecture.

[0044] Metal microresonator gyroscopes operate based on the Coriolis effect generated by the vibration of a harmonic oscillator. In a rotating system, a particle moving in a straight line will deviate from its true direction due to inertia; this phenomenon is called the Coriolis effect, and the corresponding expression for the Coriolis force is:

[0045] (1)

[0046] Where: m is the mass of the particle. For input angular rate, Let be the velocity of the particle. Assume... The expression is:

[0047] (2)

[0048] Due to the Coriolis force, the mode shape precesses, and the oscillator will induce vibration along the Y-axis. Assume... It is the system's motion time. Let be the damping coefficient. Solving the differential equation, we obtain the transfer function of the particle's motion in the Y-axis system as:

[0049] (3)

[0050] It can be seen that the motion of the particle in the Y-axis system is related to the input angular velocity within the frequency response range. It is directly proportional. The input angular velocity can be indirectly obtained by extracting the amplitude of the detected mode.

[0051] Step S204: Analyze the characteristics of the parallel plate capacitor.

[0052] When a parallel-plate capacitor is used for detection, we have:

[0053] (4)

[0054] in: The area of ​​the plates facing each other. The distance between the plates is the distance between the plates. It is the electrostatic constant (9×10⁹). Pi is the dielectric constant.

[0055] In the gyroscope, a plated electrode is formed between the gyroscope axis and the oscillator to create a parallel-plate capacitor. When the particle amplitude is... At times, such as Figure 3 As shown.

[0056] The change in capacitance is:

[0057] (5)

[0058] Expanding the above equation using Taylor series, since for level, and Actual measurement is Level, therefore satisfied After ignoring higher-order infinitesimals, it can be approximated as:

[0059] (6)

[0060] The above formula shows that the change in capacitance is approximately linearly related to the change in the distance between the plates.

[0061] Step S206: Detect the variable capacitor.

[0062] The transistor is switched on and off using a program, so that the change in capacitance is proportional to the frequency. The circuit principle behind the transformation of the sine function graph is as follows:

[0063] Set the transistor switching frequency , ; Input signal frequency , .

[0064] In the discrete domain, let Four transistors are used to control four capacitors. The base input function expression of the transistors is:

[0065] (7)

[0066] in, It is a step function. For a unit impulse function, the relationship between the two is: Step function The function expression is:

[0067] (8)

[0068] Four switches are used to control the switching on and off of the transistor. , , The branch input capacitor is a 20pF capacitor. With a branch input capacitor of 10pF, the eight cyclic levels are represented as follows: 0001, 0100, 1001, 1100, 1011, 1100, 1001, 0100. The specific truth tables for the four switch values ​​are shown in Table 1.

[0069] Table 1 Truth Table for Switch Logic

[0070]

[0071] Using Karnaugh maps, combining pairs of expressions, and simplifying, we can obtain the output expression as follows: .

[0072] During the phase of capacitance increase, let , During the capacitance decrease phase, let , The state transition diagram of the capacitor switch within the period can be obtained as follows: Figure 4 As shown

[0073] The capacitors are selected as 10pF, 20pF, 20pF, and 20pF respectively. After connecting the control, the resistance across the capacitors can change periodically according to the sequence: 10pF-20pF-30pF-40pF-50pF-40pF-30pF-20pF. Specifically... Figure 5 As shown

[0074] The frequency of the input sinusoidal voltage is The amplitude is The input signal, after Surface mount resistors, then through The surface mount capacitor is grounded. Resistor connected in parallel Instrumentation amplifier, used to test the voltage across the output terminals.

[0075] Let the resistance be According to the basic circuit theorem, for an AC signal, Capacitive reactance of a capacitor ( )for ,but The total impedance of the series circuit is:

[0076] (9)

[0077] make ,in , , We can obtain:

[0078] (10)

[0079] The relationship between the voltage across the capacitor being measured and its series resistor can be obtained from the above formula. The two ends of the series resistor are connected to the instrumentation amplifier. of and The formula for calculating the number of pins is as follows:

[0080] (11)

[0081] in Made by the AD8277 chip The resistance between the pins determines the resistance.

[0082] Step S208, ARM controls the switch.

[0083] The design concept of program-controlled switching circuit is as follows: Figure 6 As shown

[0084] The specific process of program design is as follows: Set a single cycle and frequency in the program, and use a timer to control the four switches to change cyclically at the same time (0001, 0100, 1001, 1100, 1011, 1100, 1001, 0100). The frequency can be adjusted by the timer size.

[0085] Connect the three pins mentioned above to the variable capacitor board to control the switching of the variable capacitor transistor. The specific block diagram is as follows: Figure 7 As shown

[0086] The specific implementation process of the circuit is as follows: setting frequency of input signal and amplitude The amplitude of the base input of the four transistors is The DC voltage is controlled by a program to switch on and off, causing it to exhibit a frequency of [frequency value missing]. The periodic change of the variable capacitor results in a sinusoidal change in the corresponding branch impedance.

[0087] When the input circuit impedance changes, parallel connections The current through the capacitor is also sinusoidal. At this time, the voltage across the voltage divider resistor is [carrier value]. The baseband signal consists of a sinusoidal voltage generated by a variable capacitor. Modulated signal.

[0088] Instrumentation amplifier Gain and Resistor connected between pins The relevant calculation formula is as follows:

[0089] (12)

[0090] The resistance-bandwidth-gain product is a constant, and its magnitude is: .when The resistance at both ends is When, its gain is obtained from the formula. The value is 10. The bandwidth that can be processed at this time is:

[0091] (13)

[0092] The detailed implementation flowchart of the circuit is as follows: Figure 8 As shown

[0093] The simulation and experiment will be described in detail below.

[0094] 1) Data Analysis

[0095] The program is set to change frequency of four switches as follows: The input DDS signal has a frequency of The amplitude is Given a sinusoidal input, draw the simulation circuit diagram of the variable capacitor as follows: Figure 9 As shown.

[0096] use Waveforms of simulated and actual circuits tested at various points using an oscilloscope. (When no input is available) Signal, without voltage divider resistors and capacitors and Instrumentation amplifier Test only The voltage across the capacitor connected in series with it was tested as follows: Figure 10 As shown

[0097] As a switching device, the base of a transistor is at the input. When a switching signal is applied, the transistor periodically switches between on (low resistance) and off (high resistance). The voltage change of the capacitor follows... During the charging and discharging process, the capacitor voltage will change with the state of the external circuit.

[0098] During the transistor's conduction phase: When a signal is input to the base to turn on the transistor, the transistor is equivalent to a low-impedance path, providing a charging and discharging circuit for the series capacitor. Figure 10 The capacitor connected to the transistor will charge and discharge rapidly, and the capacitor voltage will change rapidly with the charging and discharging, corresponding to the rapid rise and fall of voltage in the waveform.

[0099] Transistor cutoff phase: When the base signal cuts off the transistor, its equivalent high impedance is interrupted, the capacitor charging and discharging circuit is cut off (or there is only a very small leakage current path), and the capacitor voltage basically remains at the level before cutoff, corresponding to a relatively flat voltage in the waveform.

[0100] The input reference signal is the amplitude. ,frequency sine wave For signals, connect voltage divider resistors and capacitors; do not connect... When using an instrument amplifier, without connecting the switch, test the voltage across the voltage divider resistor. The test result is as follows: Figure 11 As shown.

[0101] Resistors form a voltage divider branch, distributing voltage proportionally to the resistance. The input signal, after being divided by resistors, will have its amplitude altered. Regarding phase: due to capacitor filtering / coupling... Capacitors and resistors form A filter network is used to filter input frequency signals.

[0102] (14)

[0103] Capacitors can affect the phase and amplitude of a signal; high-frequency components may be attenuated or phase-shifted, causing the voltage waveform at the test point to differ from the original waveform in frequency, phase, and amplitude. The signals are different. Analyzing the voltage divider branch above, we can see from the above formula that the branch is a high-pass filter.

[0104] To verify the linear response output capability of the designed capacitance detection circuit for pF-level capacitors, the overall test system was debugged. The system mainly consists of a signal generator, DC voltage source, power supply board, variable capacitor board, instrumentation amplifier board, and oscilloscope. Its specific physical structure is as follows: Figure 12 As shown.

[0105] When input amplitude ,frequency A sine wave signal, connected to a voltage divider resistor and a capacitor, only connected Switch, test The output voltage of the instrumentation amplifier, the test results are as follows: Figure 13 As shown.

[0106] The output waveform of AD8227 shows a jump: → → The fundamental reason for this three-stage transition is that the input terminal is being periodically reset (the switched capacitor is discharging), while the instrumentation amplifier itself is not saturated or damaged, but only amplifies the transient voltage at the input terminal.

[0107] The output waveform during the analysis period is as follows:

[0108] During the switch-off period (square wave high level): the square wave is high, the transistor is off. The capacitor is not short-circuited. One end of the capacitor is grounded, and the other end is connected to... resistor connected to ( , (The sine wave). At this time, the capacitor and resistor form a high-pass network, and the time constant is:

[0109] (15)

[0110] A 0.2V sine wave signal passes through Qualcomm, in (cycle The following is represented as a derivative; at this time, the output terminal shows the derivative waveform of the input sine wave, and the amplitude is... After being magnified 10 times, it is approximately However, due to power supply voltage limitations, it can only reach... Left and right. That is, the "left and right" on the oscilloscope. ".

[0111] At the instant the switch closes (falling edge of the square wave): the capacitor is momentarily short-circuited to ground by the transistor, and the capacitor charge is momentarily released. The voltage was instantly pulled up to near A rapid negative transition occurred at the input of the instrumentation amplifier (manifested as...) The spike is a transient response caused by the combined effect of the switch's on-resistance and the amplifier's input capacitance, and therefore lasts for an extremely short time.

[0112] While the switch remains closed (square wave low level): the capacitor remains short-circuited. The end was clamped Nearby. But The terminal (negative differential terminal) was not clamped in the same way, but still passed through another terminal. The resistor is connected to the reference potential. Therefore, the differential input exhibits a negative DC differential value (approximately...). ), after being magnified 10 times, is approximately This refers to the flat level displayed on the oscilloscope.

[0113] "Square wave switch + capacitor reset" allows the instrumentation amplifier input to be at... The circuit undergoes three states: "normal AC → instantaneous discharge → clamped DC," resulting in the output waveform displayed as follows. → → To prevent the waveform from displaying negative levels, you can... The same switching clamping is applied to the terminals, or the capacitor is moved from ground to the reference voltage so that both input terminals are pulled to the same potential when the switch is closed.

[0114] 2) Output Analysis

[0115] Due to the influence of spikes, the useful signal cannot be demodulated and can only be analyzed in the time domain.

[0116] When the DDS frequency is greater than 20kHz and the amplitude is greater than 0.8V, the change in the DDS signal amplitude can be clearly observed by observing the waveform. When the transistor is on, the 10pF capacitor is also on, theoretically increasing the amplitude of the voltage divider signal. When the transistor is off, the 10pF capacitor is not on, theoretically decreasing the amplitude of the voltage divider signal.

[0117] In addition to the spikes, the waveform in the diagram may also have interference from the transistor collector (manifested as a square wave with a frequency of 4kHz and an amplitude of approximately 0 to -200mV) superimposed on the output signal, causing the waveform to be pulled up and down. For example... Figure 14 As shown, however, this change gradually weakens as the amplitude of the DDS signal increases.

[0118] The specific causes of voltage spikes include: parasitic inductance: the wires connected to the collector of the transistor (or the drain of the MOSFET) and the load (such as a relay or motor coil) themselves have inductance. We can equate this to the parasitic inductance L in the circuit; sudden current change: when the transistor suddenly changes from conducting (saturated) to turning off, the current flowing through the inductor L... It will instantly become 0; Induced electromotive force: According to Lenz's law:

[0119] (16)

[0120] An inductor generates a back electromotive force (EMF) to resist this sudden change in current. This back EMF is related to the supply voltage. The superposition, acting between the collector and emitter of the transistor, forms a gap much higher than... Voltage spikes:

[0121] (17)

[0122] The results validated the rationality of the variable capacitor circuit design and also demonstrated that the subsequent instrumentation amplification module played a crucial role in stabilizing the signal-to-noise ratio while simultaneously increasing the signal amplitude. The absolute error between the simulation and the actual output was controlled within 0.3% of the output signal. The overall system output was stable, exhibiting excellent real-time response characteristics.

[0123] This application addresses the detection of weak capacitance changes in metal micro-hemispherical resonant gyroscopes by designing an NPN transistor capacitance detection circuit based on ARM control. This circuit effectively utilizes the transistor to receive the weak current signal generated by pF-level capacitance changes. Through frequency and time domain analysis, the voltage divider resistor and capacitor parameters are optimized, achieving a balance between gain and stability. Parallel connection is introduced. The filtering module suppresses sudden changes in pulse signals, effectively improving system stability.

[0124] Simulation and experimental results show that the system exhibits good linearity and frequency response characteristics at a constant input frequency, and possesses fast response and anti-interference capabilities. The simulation and actual output error is controlled within 0.3%, and the system response speed is less than 3ms. The research findings provide an effective and feasible technical solution for extracting weak capacitance signals in high-precision inertial measurements, particularly in scenarios requiring periodic capacitance adjustment (such as filter tuning and sensor simulation).

[0125] This application also provides a device for simulating the microcapacitance variation characteristics of a metal resonant gyroscope, such as... Figure 15 As shown, the system includes: a construction module 152, configured to establish a multi-element simulation model based on the sensitive structure, elastic support structure, and fixed structure of a metal resonant gyroscope; a calculation module 154, configured to mesh the multi-element model to obtain node position information, and based on the node position information, calculate the minute displacement of each node during vibration using external force excitation conditions and boundary constraint conditions to obtain displacement data; a solution module 156, configured to calculate the distance change between adjacent electrodes based on the displacement data, and based on the distance change and combined with electrode geometric parameters, solve for the corresponding micro-capacitance change value; and a driving module 158, configured to drive the ARM control switch to switch on and off based on the micro-capacitance change value and according to a preset threshold or control algorithm, so as to realize the acquisition or feedback control of micro-capacitance signals.

[0126] It should be noted that the device for simulating the microcapacitance variation characteristics of a metal resonant gyroscope provided in the above embodiments is only an example of the division of the above functional modules. In practical applications, the above functions can be assigned to different functional modules as needed, that is, the internal structure of the device can be divided into different functional modules to complete all or part of the functions described above. In addition, the device for simulating the microcapacitance variation characteristics of a metal resonant gyroscope provided in the above embodiments and the method embodiments for simulating the microcapacitance variation characteristics of a metal resonant gyroscope belong to the same concept, and the specific implementation process is detailed in the method embodiments, which will not be repeated here.

[0127] Figure 16 A schematic diagram of a computer device suitable for implementing embodiments of the present disclosure is shown. It should be noted that... Figure 16 The computer device shown is merely an example and should not be construed as limiting the functionality and scope of use of the embodiments disclosed herein.

[0128] like Figure 16 As shown, the computer device includes a central processing unit (CPU) 1001, which can perform various appropriate actions and processes according to a program stored in a read-only memory (ROM) 1002 or a program loaded from a storage section 1008 into a random access memory (RAM) 1003. The RAM 1003 also stores various programs and data required for system operation. The CPU 1001, ROM 1002, and RAM 1003 are interconnected via a bus 1004. An input / output (I / O) interface 1005 is also connected to the bus 1004.

[0129] The following components are connected to I / O interface 1005: an input section 1006 including a keyboard, mouse, etc.; an output section 1007 including a cathode ray tube (CRT), liquid crystal display (LCD), etc., and speakers, etc.; a storage section 1008 including a hard disk, etc.; and a communication section 1009 including a network interface card such as a LAN card, modem, etc. The communication section 1009 performs communication processing via a network such as the Internet. A drive 1010 is also connected to I / O interface 1005 as needed. A removable medium 1011, such as a disk, optical disk, magneto-optical disk, semiconductor memory, etc., is installed on drive 1010 as needed so that computer programs read from it can be installed into storage section 1008 as needed.

[0130] The above description is only a preferred embodiment of this application. It should be noted that for those skilled in the art, several improvements and modifications can be made without departing from the principle of this application, and these improvements and modifications should also be considered within the scope of protection of this application.

Claims

1. A method for simulating the microcapacitance variation characteristics of a metal resonant gyroscope, characterized in that, include: A multi-element simulation model was established based on the sensitive structure, elastic support structure, and fixed structure of the metal resonant gyroscope. The multi-element model is meshed to obtain node position information. Based on the node position information, the small displacements of each node during the vibration process are calculated using external force excitation conditions and boundary constraint conditions to obtain displacement data. Based on the displacement data, the distance change between adjacent electrodes is calculated, and based on the distance change and the electrode geometric parameters, the corresponding microcapacitance change value is solved. Based on the microcapacitance change value, according to a preset threshold or control algorithm, the ARM control switch is driven to switch on and off to realize the acquisition or feedback control of the microcapacitance signal.

2. The method according to claim 1, characterized in that, A multi-element simulation model is established based on the sensing structure, elastic support structure, and fixing structure of a metal resonant gyroscope, including: The sensitive structure of the metal resonant gyroscope is discretized into several finite element units, and corresponding material properties and geometric parameters are assigned to each finite element unit. The elastic support structure of the metal resonant gyroscope is discretized into finite element units, and the elastic modulus and damping coefficient are set for each finite element unit. The fixed structure of the metal resonant gyroscope is discretized into finite element units, and fixed boundary conditions are set to limit the constraints of the overall model. The connection relationships between the finite element elements of the sensitive structure, the finite element elements of the elastic support structure, and the fixed structure are established to obtain the multi-element model.

3. The method according to claim 2, characterized in that, The multi-element model is meshed to obtain node location information. Based on this node location information, and using external force excitation conditions and boundary constraint conditions, the minute displacements of each node during the vibration process are calculated to obtain displacement data, including: The multi-unit simulation model is divided into grids according to a preset unit size to generate a set of nodes, and spatial coordinate information is determined for each node to obtain node position information data. An external force excitation condition is applied to the multi-unit model, and the preliminary response data of each node after being subjected to the external force is calculated. The external force excitation condition includes driving force, vibration frequency and direction information. Based on the node location information data and the preliminary response data, boundary constraints are applied to the nodes of the fixed structure and the elastic support structure, the node degrees of freedom are adjusted, and the constrained node response data is obtained. The finite element method is used to calculate the constrained nodal response data, and the minute displacement of each node during the vibration process is solved to obtain the displacement data.

4. The method according to claim 2, characterized in that, Based on the displacement data, the distance change between adjacent electrodes is calculated, and based on the distance change and the electrode geometric parameters, the corresponding microcapacitance change value is solved, including: Based on the displacement data, the distance change between adjacent electrodes in the sensitive structure during the vibration process is calculated to obtain the distance change data; By combining the distance variation data with the geometric parameters of each electrode, a capacitance model is established to obtain the microcapacitance calculation formula, wherein the geometric parameters include at least one of the following: electrode area, initial spacing between electrodes; Using the microcapacitance calculation formula, the distance change data is solved to obtain the microcapacitance change value corresponding to each pair of electrodes.

5. The method according to claim 2, characterized in that, Based on the microcapacitance change value, and according to a preset threshold or control algorithm, the ARM control switch is driven to switch on / off states to achieve microcapacitance signal acquisition or feedback control, including: The microcapacitance change value is compared and calculated with a preset threshold or control algorithm to obtain control signal data; Based on the control signal data, a corresponding switch on / off command is generated, and the state of the ARM-controlled switch is changed. Under the action of the switch, the change of the microcapacitance is collected or feedback control is performed to obtain real-time microcapacitance signal data, so as to realize the acquisition or feedback control of the microcapacitance signal.

6. The method according to claim 5, characterized in that, After obtaining the real-time microcapacitance signal data, the method further includes: The real-time microcapacitor signal data is digitally filtered to obtain filtered microcapacitor signal data. The filtered microcapacitor signal data is normalized and corrected by combining the initial value of the microcapacitor or the system calibration parameters to obtain normalized and calibrated microcapacitor signal data. Based on the normalized and calibrated microcapacitor signal data, the required feature parameters are extracted to obtain microcapacitor feature data, and the microcapacitor feature data is output for subsequent analysis, control algorithms or closed-loop feedback control.

7. A device for simulating the microcapacitance variation characteristics of a metal resonant gyroscope, characterized in that, include: The building module is configured to establish a multi-unit simulation model based on the sensitive structure, elastic support structure, and fixed structure of a metal resonant gyroscope. The calculation module is configured to perform mesh generation on the multi-element model to obtain node position information, and based on the node position information, calculate the small displacement of each node during the vibration process using external force excitation conditions and boundary constraint conditions to obtain displacement data. The solution module is configured to calculate the distance change between adjacent electrodes based on the displacement data, and to solve for the corresponding microcapacitance change value based on the distance change and the electrode geometric parameters. The driving module is configured to drive the ARM control switch to switch on and off based on the microcapacitance change value and according to a preset threshold or control algorithm, so as to realize the acquisition or feedback control of the microcapacitance signal.

8. A computer-readable storage medium, characterized in that, The computer-readable storage medium includes a stored program, wherein, when the program is executed, it controls the device on which the computer-readable storage medium is located to perform the method according to any one of claims 1 to 6.

9. A computer device, characterized in that, include: Memory and processor The memory stores computer programs; The processor is configured to execute a computer program stored in the memory, wherein when the computer program is executed, the processor performs the method according to any one of claims 1 to 6.

10. A computer program product, comprising a computer program, characterized in that, When the computer program is executed by a processor, it implements the steps of the method according to any one of claims 1 to 6.

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