Package structure, package method and circuit board

Abstract

The application provides a packaging structure, a packaging method and a circuit board. The packaging structure of the application comprises a circuit board, a pre-embedded device group, a first build-up structure and a second build-up structure. The circuit board has at least one pre-embedded groove penetrating through the thickness direction of the circuit board, and the pre-embedded device group is arranged in the pre-embedded groove, and a first gap is arranged between the outer circumferential surface of the pre-embedded device group and the inner circumferential surface of the pre-embedded groove. The first build-up structure is arranged on one side of the circuit board in the thickness direction, and the pre-embedded device group is connected with the first build-up structure. The second build-up structure is arranged on the other side of the circuit board in the thickness direction, and the pre-embedded device group is connected with the second build-up structure. A first channel is arranged on the circuit board, one end of the first channel is connected with the first gap, the other end of the first channel extends to the side edge of the circuit board, and the other end of the first channel is connected with the outside of the circuit board. Therefore, the packaging structure of the application can meet the heat dissipation and exhaust requirements of the pre-embedded device.

Description

Technical Field

[0001] This invention relates to the field of printed circuit boards, and more particularly to a packaging structure, packaging method, and circuit board. Background Technology

[0002] In the field of electronic device integration, the application of embedded active or passive devices is becoming increasingly widespread. The core process is to embed the target device inside the PCB cavity and use a dielectric layer to wrap and fill the device around its sides and top and bottom surfaces. This achieves stable fixation of the device inside the cavity and provides support for the device's signal transmission and current conduction, ensuring that signals and current can be fanned out through blind vias or blind slots.

[0003] However, in the PCB manufacturing process, critical steps such as lamination and baking must be performed under high temperature and high pressure. Under these harsh conditions, embedded devices are prone to releasing volatile gases. Because the devices are tightly wrapped by the dielectric layer, forming a relatively sealed space, the volatile gases cannot dissipate in time. Upon heating, they expand rapidly, generating continuous internal stress on the PCB substrate and dielectric layer. This internal stress can directly cause defects such as bulges and protrusions in the substrate or dielectric layer, and in severe cases, it can even cause material cracking, significantly reducing the structural integrity and reliability of the PCB product and posing a great risk to subsequent assembly and use.

[0004] Furthermore, in the actual application stage of the finished module, when the device operates under high current, a large amount of heat is generated, which leads to a sharp increase in the temperature of the device and its surrounding area. If the heat cannot be dissipated quickly, it will directly affect the operating efficiency of the device, causing problems such as signal delay and increased power consumption. Long-term high-temperature operation will also accelerate the aging of the device, significantly reducing the operational stability and lifespan of the module.

[0005] How to achieve rapid exhaust of volatile gases during PCB manufacturing while improving the heat dissipation performance of finished modules has become a key technical challenge that urgently needs to be addressed, restricting the development and application of embedded device integration technology.

[0006] Therefore, the packaging structure in related technologies cannot simultaneously meet the heat dissipation and ventilation requirements of embedded devices. Summary of the Invention

[0007] This invention provides a packaging structure to solve the problem that packaging structures in related technologies cannot simultaneously meet the heat dissipation and ventilation requirements of embedded devices.

[0008] This invention provides a packaging structure.

[0009] The packaging structure of this invention includes:

[0010] A circuit board, wherein the circuit board is provided with at least one embedded groove, the embedded groove having a through-hole orientation along the thickness direction of the circuit board;

[0011] An embedded component group is provided in the embedded groove, and a first gap is provided between the outer peripheral surface of the embedded component group and the inner peripheral surface of the embedded groove.

[0012] A first add-in structure is disposed on one side of the circuit board in the thickness direction, and the pre-embedded device group is connected to the first add-in structure.

[0013] The second add-in structure is disposed on the other side of the circuit board in the thickness direction, and the embedded device group is connected to the second add-in structure.

[0014] The circuit board is provided with a first channel, one end of the first channel is connected to the first gap, the other end of the first channel extends to the side edge of the circuit board in a direction perpendicular to the thickness direction of the circuit board, and the other end of the first channel is connected to the outside of the circuit board.

[0015] Therefore, the packaging structure of this embodiment of the invention provides a first gap between the pre-embedded device group and the pre-embedded groove, and a first channel to connect the first gap with the external space. On the one hand, the gas generated by the pre-embedded device group during hot pressing can be discharged through the first gap and the first channel; on the other hand, the heat generated by the operation of the pre-embedded device can also be discharged through the first gap and the first channel.

[0016] Therefore, the packaging structure of this invention can take into account both the heat dissipation and ventilation requirements of the embedded devices.

[0017] In some embodiments, the pre-embedded device group includes a single pre-embedded device; or

[0018] The pre-embedded device group includes multiple pre-embedded devices, and a second gap is provided between the multiple pre-embedded devices.

[0019] In some embodiments, the packaging structure of the present invention further includes a second channel, which sequentially passes through the first add-on structure, the circuit board, and the second add-on structure, and the second channel is connected to the first gap.

[0020] In some embodiments, the packaging structure of the present invention further includes a third channel, which sequentially passes through the first add-on structure, the circuit board, and the second add-on structure, and is connected to the first channel.

[0021] In some embodiments, the packaging structure of the present invention further includes a fourth channel, which extends through the first add-on structure to the first channel and is connected to the first channel.

[0022] In some embodiments, the packaging structure of the present invention further includes a fifth channel, which extends through the first layered structure to the first gap, and the fifth channel is connected to the first gap.

[0023] In some embodiments, the packaging structure of the present invention further includes a sixth channel, which extends through the second add-on structure to the first channel and is connected to the first channel.

[0024] In some embodiments, the packaging structure of the present invention further includes a seventh channel, which extends through the second add-on structure to the first gap, and the seventh channel is connected to the first gap.

[0025] In some embodiments, the first added layer structure includes a first dielectric layer and a first metal layer, the first dielectric layer and the first metal layer being disposed sequentially on one side of the circuit board along a direction away from the circuit board, and the first metal layer being electrically connected to the embedded device.

[0026] The second layer addition structure includes a second dielectric layer and a second metal layer. The second dielectric layer and the second metal layer are sequentially disposed on the other side of the circuit board along the direction away from the circuit board in the thickness direction, and the second metal layer is electrically connected to the embedded device.

[0027] In some embodiments, the circuit board includes a first core board, a second core board, and an intermediate core board, wherein the intermediate core board is disposed between the first core board and the second core board, and a third dielectric layer is disposed between the first core board and the intermediate core board, as well as between the second core board and the intermediate core board.

[0028] In the thickness direction of the circuit board, the embedded groove sequentially penetrates the first core board, the third dielectric layer, the intermediate core board, the third dielectric layer, and the second core board, and the first channel penetrates the intermediate core board.

[0029] In some embodiments, the intermediate core board includes a single intermediate sub-core board; or

[0030] The intermediate core board includes multiple intermediate sub-core boards, and the third dielectric layer is provided between the multiple intermediate sub-core boards.

[0031] The present invention also provides a packaging method.

[0032] The packaging method of this invention includes the following operations:

[0033] A circuit board is obtained, the circuit board having a pre-embedded groove and a first channel penetrating through it along its thickness direction, one end of the first channel being connected to the pre-embedded groove, the other end of the first channel extending in a direction perpendicular to the thickness direction of the circuit board, and the first channel being spaced apart from the side edge of the circuit board, or the other end of the first channel being connected to the side edge of the circuit board.

[0034] A pre-embedded device is obtained and placed in the pre-embedded groove. A first layer structure and a second layer structure are processed on both sides of the circuit board in the thickness direction to fix the pre-embedded device. A first gap is provided between the outer peripheral surface of the pre-embedded device and the inner peripheral surface of the pre-embedded groove, and one end of the first channel is connected to the first gap to form a semi-finished package structure.

[0035] The side edge of the encapsulated semi-finished product is trimmed to expose the first channel and connect it to the outside, or no trimming is performed; thus, the encapsulated structure is obtained.

[0036] In some embodiments, if the pre-embedded device group includes multiple pre-embedded devices, a second gap is provided between the multiple pre-embedded devices.

[0037] In some embodiments, the method further includes the following operation: providing a second channel on the packaged semi-finished product, wherein the second channel sequentially passes through the first add-in structure, the circuit board, and the second add-in structure, and the second channel is connected to the first gap.

[0038] In some embodiments, the method further includes: providing a third channel on the packaged semi-finished product, wherein the third channel sequentially passes through the first add-in structure, the circuit board, and the second add-in structure, and the third channel is connected to the first channel.

[0039] In some embodiments, the method further includes: providing a fourth channel on the packaged semi-finished product, the fourth channel extending through the first add-on structure to the first channel, and the fourth channel being connected to the first channel.

[0040] In some embodiments, the method further includes: providing a fifth channel on the packaged semi-finished product, the fifth channel extending through the first add-on structure to the first gap, and the fifth channel communicating with the first gap.

[0041] In some embodiments, the method further includes: providing a sixth channel on the packaged semi-finished product, the sixth channel extending through the second add-on structure to the first channel, and the sixth channel being connected to the first channel.

[0042] In some embodiments, the method further includes: providing a seventh channel on the packaged semi-finished product, the seventh channel extending through the second layered structure to the first gap, and the seventh channel communicating with the first gap.

[0043] In some embodiments, processing a first layer structure and a second layer structure on both sides of the circuit board in the thickness direction includes the following operations;

[0044] At least one first dielectric layer and at least one first metal layer are alternately disposed on one side of the circuit board in the thickness direction, and the first metal layer is electrically connected to the embedded device.

[0045] At least one second dielectric layer and at least one second metal layer are alternately disposed on the other side of the circuit board in the thickness direction, and the second metal layer is electrically connected to the embedded device.

[0046] In some embodiments, obtaining the circuit board includes the following operations:

[0047] Obtain the first core board, the second core board, the intermediate core board, and the third dielectric layer;

[0048] A first through groove is machined through the intermediate core board along its thickness direction, and the first through groove is spaced apart from the side edge of the intermediate core board.

[0049] The first core board and the second core board are laminated to both sides of the intermediate core board in the thickness direction through a third dielectric layer;

[0050] A pre-embedded groove is processed so that it sequentially penetrates the first core board, the third dielectric layer, the intermediate core board, the third dielectric layer, and the second core board.

[0051] In some embodiments, the intermediate core board includes a single intermediate sub-core board; or

[0052] The intermediate core board includes multiple intermediate sub-core boards, and the third dielectric layer is disposed between the multiple intermediate sub-core boards.

[0053] The present invention also provides a circuit board.

[0054] The circuit board of this invention includes at least one of the packaging structures described in the above embodiments. Attached Figure Description

[0055] To more clearly illustrate the technical solutions of the embodiments of the present invention, the drawings used in the description of the embodiments of the present invention will be briefly introduced below. Obviously, the drawings described below are only some embodiments of the present invention. For those skilled in the art, other drawings can be obtained based on these drawings without creative effort.

[0056] Figure 1 This is a schematic diagram of the packaging structure according to an embodiment of the present invention;

[0057] Figure 2 This is one of the flowcharts of the encapsulation method according to an embodiment of the present invention;

[0058] Figure 3 This is the second flowchart of the encapsulation method according to an embodiment of the present invention;

[0059] Figure 4 This is the third flowchart of the encapsulation method according to an embodiment of the present invention;

[0060] Figure 5 This is the fourth flowchart of the encapsulation method according to an embodiment of the present invention;

[0061] Figure 6 This is the fifth flowchart of the encapsulation method according to an embodiment of the present invention;

[0062] Figure 7 This is the sixth flowchart of the encapsulation method according to an embodiment of the present invention.

[0063] In the picture:

[0064] 1. Circuit board; 101. Embedded groove;

[0065] 2. Embedded component group; 201. Embedded components;

[0066] 3. First add-in structure; 301. First dielectric layer; 302. First metal layer;

[0067] 4. Second add-in structure; 401. Second dielectric layer; 402. Second metal layer;

[0068] 5. First gap;

[0069] 6. First passage;

[0070] 7. Second channel;

[0071] 8. Third Channel;

[0072] 9. Fourth Channel;

[0073] 10. Fifth Channel;

[0074] 11. The sixth passage;

[0075] 12. Seventh Channel;

[0076] 13. First core board;

[0077] 14. Second core board;

[0078] 15. Intermediate core board;

[0079] 16. Third dielectric layer;

[0080] 17. First through slot;

[0081] 18. First conductive structure;

[0082] 19. Second conductive structure;

[0083] 20. Second gap. Detailed Implementation

[0084] To make the technical problems solved, the technical solutions, and the beneficial effects of this invention clearer, the invention will be further described in detail below with reference to the accompanying drawings and embodiments. It should be understood that the specific embodiments described herein are merely illustrative of the invention and are not intended to limit the invention.

[0085] In the description of this invention, it should be understood that the terms "longitudinal," "radial," "length," "width," "thickness," "upper," "lower," "front," "rear," "left," "right," "vertical," "horizontal," "top," "bottom," "inner," and "outer," etc., indicating orientation or positional relationships, are based on the orientation or positional relationships shown in the accompanying drawings and are only for the convenience of describing the invention and simplifying the description, and do not indicate or imply that the device or element referred to must have a specific orientation, or be constructed and operated in a specific orientation, and therefore should not be construed as a limitation of the invention. In the description of this invention, unless otherwise stated, "a plurality of" means two or more.

[0086] In the description of this invention, it should be noted that, unless otherwise explicitly specified and limited, the terms "installation," "connection," and "joining" should be interpreted broadly. For example, they can refer to a fixed connection, a detachable connection, or an integral connection; they can refer to a mechanical connection or an electrical connection; they can refer to a direct connection or an indirect connection through an intermediate medium; and they can refer to the internal encapsulation of two components. Those skilled in the art can understand the specific meaning of the above terms in this invention based on the specific circumstances.

[0087] To address the issue that the packaging structure in related technologies cannot simultaneously meet the requirements of venting and heat dissipation for the embedded device 201, this invention provides a packaging structure.

[0088] The packaging structure of this invention includes a circuit board 1, a pre-embedded device group 2, a first layer structure 3, and a second layer structure 4.

[0089] The circuit board 1 has a pre-embedded groove 101 that extends through it along its thickness direction. Meanwhile, the pre-embedded device group 2 is disposed in the pre-embedded groove 101, and a first gap 5 is provided between the outer peripheral surface of the pre-embedded device group 2 and the inner peripheral surface of the pre-embedded groove 101.

[0090] It is understandable that the outer peripheral surface of the pre-embedded device group 2 only includes the side surface of the pre-embedded device group 2 and does not include the top and bottom surfaces of the pre-embedded device group 2. Similarly, the inner peripheral surface of the pre-embedded groove 101 can be understood as the inner wall surface of the pre-embedded groove 101.

[0091] The first layer structure 3 is disposed on one side of the circuit board 1 in the thickness direction, and the embedded device group 2 is connected to the first layer structure 3; the second layer structure 4 is disposed on the other side of the circuit board 1 in the thickness direction, and the embedded device group 2 is connected to the second layer structure 4.

[0092] It is understandable that by setting the first layer structure 3 and the second layer structure 4, and connecting the first layer structure 3 and the second layer structure 4 to the pre-embedded device group 2, the pre-embedded device group 2 is fixed so that a first gap 5 is formed between the outer peripheral surface of the pre-embedded device group 2 and the inner peripheral surface of the pre-embedded groove 101.

[0093] Meanwhile, the circuit board 1 is provided with a first channel 6. One end of the first channel 6 is connected to the first gap 5, and the other end of the first channel 6 extends to the side edge of the circuit board 1 in a direction perpendicular to the thickness direction of the circuit board 1. The other end of the first channel is connected to the outside of the circuit board 1.

[0094] Therefore, the packaging structure of this embodiment of the invention provides a first gap 5 between the pre-embedded device group 2 and the pre-embedded groove 101, and a first channel 6 to connect the first gap 5 with the external space. On the one hand, this allows the gas generated by the pre-embedded device group 2 during hot pressing to be discharged through the first gap 5 and the first channel 6; on the other hand, the heat generated by the pre-embedded device group 2 during operation can also be discharged through the first gap 5 and the first channel 6.

[0095] Therefore, the packaging structure of this embodiment can take into account both the heat dissipation and exhaust requirements of the embedded device 201.

[0096] In some embodiments, such as Figure 1 As shown, the pre-embedded device group 2 includes multiple pre-embedded devices 201, and a second gap 20 is provided between the multiple pre-embedded devices 201. At the same time, the second gap 20 is connected to the first gap 5.

[0097] The embedded device 201 can be a passive or active device such as an inductor, capacitor, magnetic core, chip, or sensor.

[0098] It is understandable that by setting a second gap 20 between multiple embedded devices 201, on the one hand, the gas generated by the embedded devices 201 of the embedded device group 2 during hot pressing can be further discharged through the second gap 20, the first gap 5 and the first channel 6, thereby expanding the exhaust area of ​​the embedded devices 201 and facilitating gas discharge; on the other hand, the heat generated by the embedded devices 201 of the embedded device group 2 during operation can also be further discharged through the second gap 20, the first gap 5 and the first channel 6.

[0099] Therefore, by setting a second gap 20 between multiple embedded devices 201, the exhaust performance and heat dissipation performance of the encapsulation structure of the present invention for the embedded devices 201 can be further improved.

[0100] In some embodiments, such as Figure 1 As shown, the packaging structure of this embodiment of the invention also includes a second channel 7, which sequentially passes through the first add-on structure 3, the circuit board 1, and the second add-on structure 4, and is connected to the first gap 5.

[0101] It is understandable that laser drilling or mechanical drilling can be used to sequentially penetrate the first layer structure 3, the circuit board 1, and the second layer structure 4, and connect with the first gap 5 to form the second channel 7.

[0102] By setting a second channel 7 that sequentially passes through the first layer structure 3, the circuit board 1, and the second layer structure 4, and is connected to the first gap 5, the gas generated during the hot pressing process and the heat generated during operation of the embedded device 201 can be discharged through the first gap 5 and the first channel 6, and further discharged through the second channel 7, thereby further improving the heat dissipation and exhaust effect of the packaging structure of the present invention on the embedded device 201.

[0103] In some embodiments, such as Figure 1 As shown, the packaging structure of this embodiment of the invention also includes a third channel 8, which sequentially passes through the first add-on structure 3, the circuit board 1, and the second add-on structure 4, and is connected to the first channel 6.

[0104] It is understandable that laser drilling or mechanical drilling can be used to sequentially penetrate the first layer structure 3, the circuit board 1, and the second layer structure 4, and connect with the first channel 6 to form the third channel 8.

[0105] By setting a third channel 8 that sequentially passes through the first layer structure 3, the circuit board 1, and the second layer structure 4, and is connected to the first channel 6, the gas generated during the hot pressing process of the embedded device 201 and the heat generated during operation can be discharged through the first gap 5 and the first channel 6, and further discharged through the third channel 8, thereby further improving the heat dissipation and exhaust effect of the packaging structure of the present invention on the embedded device 201.

[0106] In some embodiments, such as Figure 1 As shown, the packaging structure of this embodiment of the invention also includes a fourth channel 9, which extends through the first layer structure 3 to the first channel 6, and the fourth channel 9 is connected to the first channel 6.

[0107] It is understandable that the fourth channel 9 can be formed by drilling through the first layer structure 3 and extending to the first channel 6 on the circuit board 1 using laser drilling or mechanical drilling.

[0108] By setting a fourth channel 9 that penetrates the first layer structure 3 and extends to the first channel 6 on the circuit board 1, the gas generated by the embedded device 201 during the hot pressing process and the heat generated during operation can be discharged through the first gap 5 and the first channel 6, and further discharged through the fourth channel 9, thereby further improving the heat dissipation and exhaust effect of the packaging structure of the present invention on the embedded device 201.

[0109] In some embodiments, such as Figure 1 As shown, the packaging structure of this embodiment of the invention also includes a fifth channel 10, which extends through the first layer structure 3 to the first gap 5, and the fifth channel 10 is connected to the first gap 5.

[0110] It is understandable that the fifth channel 10 can be formed by drilling through the first layer structure 3 and extending to the first gap 5 on the circuit board 1 using laser drilling or mechanical drilling.

[0111] By setting a fifth channel 10 that penetrates the first layer structure 3 and extends to the first gap 5 on the circuit board 1, the gas generated by the embedded device 201 during the hot pressing process and the heat generated during operation can be discharged through the first gap 5 and the first channel 6, and further discharged through the fifth channel 10, thereby further improving the heat dissipation and exhaust effect of the packaging structure of the present invention on the embedded device 201.

[0112] In some embodiments, such as Figure 1 As shown, the packaging structure of this embodiment of the invention also includes a sixth channel 11, which extends through the second add-on structure 4 to the first channel 6, and the sixth channel 11 is connected to the first channel 6.

[0113] It is understandable that laser drilling or mechanical drilling can be used to penetrate the second add-on structure 4 and extend to the first channel 6 on the circuit board 1 to form the sixth channel 11.

[0114] By setting a sixth channel 11 that penetrates the second layer structure 4 and extends to the first channel 6 on the circuit board 1, the gas generated by the embedded device 201 during the hot pressing process and the heat generated during operation can be discharged through the first gap 5 and the first channel 6, and further discharged through the sixth channel 11, thereby further improving the heat dissipation and exhaust effect of the packaging structure of the present invention on the embedded device 201.

[0115] In some embodiments, such as Figure 1 As shown, the packaging structure of this embodiment of the invention also includes a seventh channel 12, which extends through the second layer structure 4 to the first gap 5, and the seventh channel 12 is connected to the first gap 5.

[0116] It is understandable that the seventh channel 12 can be formed by drilling through the second layer structure 4 and extending to the first gap 5 on the circuit board 1 using laser drilling or mechanical drilling.

[0117] By setting a seventh channel 12 that penetrates the second layer structure 4 and extends to the first gap 5 on the circuit board 1, the gas generated by the embedded device 201 during the hot pressing process and the heat generated during operation can be discharged through the first gap 5 and the first channel 6, and further discharged through the seventh channel 12, thereby further improving the heat dissipation and exhaust effect of the packaging structure of the present invention on the embedded device 201.

[0118] In some embodiments, such as Figure 3 As shown, the circuit board 1 of the packaging structure of this embodiment includes a first core board 13, a second core board 14 and an intermediate core board 15. The intermediate core board 15 is disposed between the first core board 13 and the second core board 14, and a third dielectric layer 16 is disposed between the first core board 13 and the intermediate core board 15 and between the second core board 14 and the intermediate core board 15.

[0119] It is understandable that the first core board 13, the second core board 14 and the intermediate core board 15 are all structures with a substrate layer in the middle and metal layers on both sides. Therefore, a third dielectric layer 16 needs to be provided between the first core board 13, the second core board 14 and the intermediate layer.

[0120] Meanwhile, the intermediate core board 15 can be set as a single layer or multiple layers according to actual needs. If it is set as multiple layers, the multi-layer intermediate core board 15 is also provided with a third medium for lamination.

[0121] like Figure 4As shown, in the thickness direction of the circuit board 1, the pre-embedded groove 101 sequentially penetrates the first core board 13, the third dielectric layer 16, the intermediate core board 15, the third dielectric layer 16, and the second core board 14. The first through groove 17 penetrates the intermediate core board 15. At the same time, one end of the first through groove 17 extends to the pre-embedded groove 101, and the other end is spaced apart from the side edge of the intermediate core board 15. Thus, after subsequent processing into the circuit board 1, the first through groove 17 can form a first channel 6, thereby achieving the effect that one end of the first channel 6 is connected to the first gap 5, and the other end of the first channel 6 extends to the side wall of the circuit board 1.

[0122] In some embodiments, the intermediate core board 15 includes a single intermediate sub-core board 151.

[0123] If the intermediate core board 15 only includes a single-layer sub-core board 151, a third dielectric layer 16 needs to be provided between the first core board 13 and the intermediate core board 15, and between the second core board 14 and the intermediate sub-core board 151 when manufacturing the circuit board.

[0124] In some embodiments, the intermediate core board 15 includes multiple intermediate sub-core boards 151, with a third dielectric layer 16 disposed between the multiple intermediate sub-core boards 151.

[0125] If the intermediate core board 15 includes multiple intermediate sub-core boards 151, when manufacturing the circuit board, a third dielectric layer 16 needs to be set between the multiple intermediate sub-core boards 151 and then hot-pressed to form the intermediate core board 15.

[0126] In some embodiments, the first layer addition structure 3 of the packaging structure of the present invention includes at least one first dielectric layer 301 and at least one first metal layer 302. The first dielectric layer 301 and the first metal layer 302 are alternately disposed on one side of the thickness direction of the circuit board 1 along the direction away from the circuit board 1, and the first metal layer 302 is electrically connected to the embedded device 201.

[0127] The second layer structure 4 includes at least one second dielectric layer 401 and at least one second metal layer 402. The second dielectric layer 401 and the second metal layer 402 are alternately disposed on the other side of the thickness direction of the circuit board 1 in a direction away from the circuit board 1, and the second metal layer 402 is electrically connected to the embedded device 201.

[0128] It is understood that the number of layers of the first dielectric layer 301 and the first metal layer 302 included in the first layer addition structure 3 can be set according to actual needs, and the number of layers of the first dielectric layer 301 and the first metal layer 302 is the same, with the first metal layer 302 disposed on the side of the first dielectric layer 301 away from the circuit board 1.

[0129] Similarly, the number of layers of the second dielectric layer 401 and the second metal layer 402 included in the second layer addition structure 4 can be set according to actual needs, and the number of layers of the second dielectric layer 401 and the second metal layer 402 is the same. The second metal layer 402 is disposed on the side of the second dielectric layer 401 away from the circuit board 1.

[0130] For example, such as Figure 1 As shown, the first layer addition structure 3 includes a first dielectric layer 301 and a first metal layer 302. The first dielectric layer 301 is disposed on one side of the circuit board 1 in the thickness direction, and the first dielectric layer 301 is connected to the embedded device 201 to fix the embedded device 201. The first metal layer 302 is disposed on the side of the first dielectric layer 301 away from the circuit board 1. At the same time, a first conductive structure 18 can be disposed in the first dielectric layer 301. The first conductive structure 18 electrically connects the embedded device 201 and the first metal layer 302, and can fan out the embedded device 201.

[0131] For example, such as Figure 1 As shown, the second layer structure 4 includes a second dielectric layer 401 and a second metal layer 402. The second dielectric layer 401 is disposed on one side of the circuit board 1 in the thickness direction and is connected to the embedded device 201 to fix the embedded device 201. The second metal layer 402 is disposed on the side of the second dielectric layer 401 away from the circuit board 1. At the same time, a second conductive structure 19 can be disposed in the second dielectric layer 401. The second conductive structure 19 electrically connects the embedded device 201 and the second metal layer 402, and can fan out the embedded device 201.

[0132] It is understood that the first conductive structure 18 and the second conductive structure 19 can be conductive pillars, conductive blind holes, or conductive blind slots, and can be set according to actual needs.

[0133] Meanwhile, the first dielectric layer 301, the second dielectric layer 401, and the third dielectric layer 16 can be adhesive materials, epoxy resins, prepregs, ABF materials, polyimide, etc. However, in order to ensure that the first dielectric layer and the second dielectric layer do not block the first gap, the second gap, and the first channel during the hot pressing process, the fluidity of the materials should be considered when selecting the materials for the first dielectric layer and the second dielectric layer, and excessive fluidity should be avoided.

[0134] The present invention also provides a packaging method.

[0135] like Figures 2-7 As shown, the packaging method of this embodiment includes the following operations:

[0136] like Figure 4As shown, a circuit board 1 is obtained. The circuit board 1 has a pre-embedded groove 101 that extends through it along its thickness direction and a first channel 6. One end of the first channel 6 is connected to the pre-embedded groove 101, and the other end of the first channel 6 is spaced apart from the side edge of the circuit board 1.

[0137] like Figure 5 As shown, a pre-embedded device group 2 is obtained and placed in a pre-embedded groove 101. A first layer structure 3 and a second layer structure 4 are processed on both sides of the circuit board 1 in the thickness direction to fix the pre-embedded device group 2. A first gap 5 is provided between the outer peripheral surface of the pre-embedded device group 2 and the inner peripheral surface of the pre-embedded groove 101 to form a semi-finished package structure.

[0138] like Figure 7 As shown, the side edge of the semi-finished packaging structure is cut to expose the first channel 6 and connect it to the outside to form the packaging structure.

[0139] If, when obtaining circuit board 1, the other end of the first channel 6 extends to the side edge of circuit board 1 and is connected to the outside of circuit board 1, then the packaging structure can be formed without cutting the semi-finished packaging structure.

[0140] Therefore, the packaging structure processed by the packaging method of the present invention provides a first gap 5 between the pre-embedded device group 2 and the pre-embedded groove 101, and provides a first channel 6 to connect the first gap 5 with the external space. On the one hand, it enables the gas generated by the pre-embedded device group 2 during hot pressing to be discharged through the first gap 5 and the first channel 6; on the other hand, the heat generated by the pre-embedded device group 2 during operation can also be discharged through the first gap 5 and the first channel 6.

[0141] In some embodiments, if the pre-embedded device group 2 includes a plurality of pre-embedded devices 201, a second gap 20 is provided between the plurality of pre-embedded devices 201, and the second gap 20 is connected to the first gap 5.

[0142] By setting a second gap 20 between multiple embedded devices 201, on the one hand, the gas generated by the embedded devices 201 of the embedded device group 2 during hot pressing can be further discharged through the second gap 20, the first gap 5 and the first channel 6, thereby expanding the exhaust area of ​​the embedded devices 201 and facilitating gas discharge; on the other hand, the heat generated by the embedded devices 201 of the embedded device group 2 during operation can also be further discharged through the second gap 20, the first gap 5 and the first channel 6.

[0143] In some embodiments, the following operation is also included: a second channel 7 is provided on the packaged semi-finished product, the second channel 7 passing through the first layer structure 3, the circuit board 1, and the second layer structure 4 in sequence, and the second channel 7 is connected to the first gap 5.

[0144] It is understandable that the second channel 7 can be formed by sequentially penetrating the first layer structure 3, the first gap 5 on the circuit board 1, and the second layer structure 4 using laser drilling or mechanical drilling.

[0145] By setting a second channel 7 that passes through the first layer structure 3, the circuit board 1, and the second layer structure 4 in sequence, the gas generated by the embedded device 201 during the hot pressing process and the heat generated during operation can be discharged through the first gap 5 and the first channel 6, and then further discharged through the second channel 7, which can further facilitate the discharge of gas and heat from the embedded device 201.

[0146] In some embodiments, the following operation is also included: a third channel 8 is provided on the packaged semi-finished product, the third channel 8 passing through the first layer structure 3, the circuit board 1, and the second layer structure 4 in sequence, and the third channel 8 is connected to the first channel 6.

[0147] It is understandable that the third channel 8 can be formed by sequentially penetrating the first layer structure 3, the first channel 6 on the circuit board 1, and the second layer structure 4 using laser drilling or mechanical drilling.

[0148] By setting a third channel 8 that sequentially passes through the first layer structure 3, the first channel 6 on the circuit board 1, and the second layer structure 4, the gas generated by the embedded device 201 during the hot pressing process and the heat generated during operation can be discharged through the first gap 5 and the first channel 6, and further discharged through the third channel 8, which can further facilitate the discharge of gas and heat from the embedded device 201.

[0149] In some embodiments, the following operation is also included: providing a fourth channel 9 on the packaged semi-finished product, the fourth channel 9 extending through the first layering structure 3 to the first channel 6, and the fourth channel 9 being connected to the first channel 6.

[0150] It is understandable that the fourth channel 9 can be formed by sequentially penetrating the first layer structure 3 through laser drilling or mechanical drilling and extending to the first channel 6 on the circuit board 1.

[0151] By setting a fourth channel 9 that extends sequentially through the first layer structure 3 to the first channel 6 on the circuit board 1, the gas generated by the embedded device 201 during the hot pressing process and the heat generated during operation can be discharged through the first gap 5 and the first channel 6, and further discharged through the fourth channel 9, which can further facilitate the discharge of gas and heat from the embedded device 201.

[0152] In some embodiments, the following operation is also included: providing a fifth channel 10 on the packaged semi-finished product, the fifth channel 10 extending through the first layer structure 3 to the first gap 5, and the fifth channel 10 communicating with the first gap 5.

[0153] It is understandable that the fifth channel 10 can be formed by sequentially penetrating the first layer structure 3 through laser drilling or mechanical drilling and extending to the first gap 5 on the circuit board 1.

[0154] By setting a fifth channel 10 that extends sequentially through the first layer structure 3 to the first gap 5 on the circuit board 1, the gas generated by the embedded device 201 during the hot pressing process and the heat generated during operation can be discharged through the first gap 5 and the first channel 6, and further discharged through the fifth channel 10, which can further facilitate the discharge of gas and heat from the embedded device 201.

[0155] In some embodiments, the following operation is also included: providing a sixth channel 11 on the packaged semi-finished product, the sixth channel 11 extending through the second layer structure 4 to the first channel 6, and the sixth channel 11 being connected to the first channel 6.

[0156] It is understandable that the sixth channel 11 can be formed by sequentially penetrating the second layer structure 4 through laser drilling or mechanical drilling and extending to the first channel 6 on the circuit board 1.

[0157] By setting a sixth channel 11 that extends from the second layer structure 4 to the first channel 6 on the circuit board 1, the gas generated by the embedded device 201 during the hot pressing process and the heat generated during operation can be discharged through the first gap 5 and the first channel 6, and further discharged through the sixth channel 11, which can further facilitate the discharge of gas and heat from the embedded device 201.

[0158] In some embodiments, the following operation is also included: providing a seventh channel 12 on the packaged semi-finished product, the seventh channel 12 extending through the second layer structure 4 to the first gap 5, and the seventh channel 12 being connected to the first gap 5.

[0159] It is understandable that the seventh channel 12 can be formed by sequentially penetrating the second layer structure 4 through laser drilling or mechanical drilling and extending to the first gap 5 on the circuit board 1.

[0160] By setting a seventh channel 12 that extends sequentially through the second layer structure 4 to the first gap 5 on the circuit board 1, the gas generated by the embedded device 201 during the hot pressing process and the heat generated during operation can be discharged through the first gap 5 and the first channel 6, and further discharged through the sixth channel 11, which can further facilitate the discharge of gas and heat from the embedded device 201.

[0161] In some embodiments, such as Figures 2-4 As shown, obtaining circuit board 1 includes the following operations:

[0162] like Figure 2 As shown, the first core board 13, the second core board 14, the intermediate core board 15, and the third dielectric layer 16 are obtained.

[0163] like Figure 2 As shown, a first through groove 17 is machined on the intermediate core board 15 along its thickness direction, and the first through groove 17 is spaced apart from the side edge of the intermediate core board 15.

[0164] like Figure 3 As shown, the first core board 13 and the second core board 14 are pressed onto both sides of the intermediate core board 15 in the thickness direction through the third dielectric layer 16.

[0165] like Figure 4 As shown, a pre-embedded groove 101 is processed so that it sequentially passes through the first core plate 13, the third dielectric layer 16, the intermediate core plate 15, the third dielectric layer 16, and the second core plate 14.

[0166] It is understandable that the first through groove 17 extending through the thickness of the intermediate core board 15 will be processed into the first channel 6. At the same time, the first through groove 17 is spaced apart from the side edge of the intermediate core board 15 to prevent foreign objects from entering the first through groove 17 during the lamination process and affecting the subsequent processing into the first channel 6.

[0167] It is understandable that the first core board 13, the second core board 14 and the intermediate core board 15 are all structures with a substrate layer in the middle and metal layers on both sides. Therefore, a third dielectric layer 16 needs to be provided between the first core board 13, the second core board 14 and the intermediate core board 15.

[0168] Meanwhile, the intermediate core board 15 can be set as a single layer or multiple layers according to actual needs, and the multi-layer intermediate core board 15 is also provided with a third medium for lamination.

[0169] If the intermediate core board 15 is multi-layered, the multi-layer intermediate core board 15 needs to be laminated and fixed by setting a third medium layer 16 between them before the first through groove 17 can be processed. Then the first core board 13 and the second core board 14 are pressed together on both sides of the intermediate core board 15 in the thickness direction through the third medium layer 16.

[0170] In the thickness direction of the circuit board 1, the pre-embedded groove 101 sequentially penetrates the first core board 13, the third dielectric layer 16, the intermediate core board 15, the third dielectric layer 16, and the second core board 14. The first channel 6 penetrates the intermediate core board 15. At the same time, one end of the first through groove 17 extends to the pre-embedded groove 101, and the other end is spaced apart from the side edge of the intermediate core board 15. Thus, after being processed into the circuit board 1, the first through groove 17 can form the first channel 6, achieving the effect that one end of the first channel 6 is connected to the first gap 5, and the other end of the first channel 6 extends to the side wall of the circuit board 1.

[0171] In some embodiments, such as Figure 5 As shown, the first layer structure 3 and the second layer structure 4 are processed on both sides of the circuit board 1 in the thickness direction, including the following operations;

[0172] At least one first dielectric layer 301 and at least one first metal layer 302 are alternately disposed on one side of the circuit board 1 in the thickness direction, and the first metal layer 302 is electrically connected to the embedded device 201.

[0173] At least one second dielectric layer 401 and at least one second metal layer 402 are alternately disposed on the other side of the circuit board 1 in the thickness direction, and the second metal layer 402 is electrically connected to the embedded device 201.

[0174] It is understood that the number of layers of the first dielectric layer 301 and the first metal layer 302 included in the first layer addition structure 3 can be set according to actual needs, and the number of layers of the first dielectric layer 301 and the first metal layer 302 is the same, with the first metal layer 302 disposed on the side of the first dielectric layer 301 away from the circuit board 1.

[0175] Similarly, the number of layers of the second dielectric layer 401 and the second metal layer 402 included in the second layer addition structure 4 can be set according to actual needs, and the number of layers of the second dielectric layer 401 and the second metal layer 402 is the same. The second metal layer 402 is disposed on the side of the second dielectric layer 401 away from the circuit board 1.

[0176] For example, such as Figure 1 As shown, the first layer addition structure 3 includes a first dielectric layer 301 and a first metal layer 302. The first dielectric layer 301 is disposed on one side of the circuit board 1 in the thickness direction, and the first dielectric layer 301 is connected to the embedded device 201 to fix the embedded device 201. The first metal layer 302 is disposed on the side of the first dielectric layer 301 away from the circuit board 1. At the same time, a first conductive structure 18 can be disposed in the first dielectric layer 301. The first conductive structure 18 electrically connects the embedded device 201 and the first metal layer 302, which can achieve the effect of fanning out the embedded device 201.

[0177] For example, such as Figure 1As shown, the second layer structure 4 includes a second dielectric layer 401 and a second metal layer 402. The second dielectric layer 401 is disposed on one side of the circuit board 1 in the thickness direction and is connected to the embedded device 201 to fix the embedded device 201. The second metal layer 402 is disposed on the side of the second dielectric layer 401 away from the circuit board 1. At the same time, a second conductive structure 19 can be disposed in the second dielectric layer 401. The second conductive structure 19 electrically connects the embedded device 201 and the second metal layer 402, which can achieve the effect of fanning out the embedded device 201.

[0178] It is understood that the first conductive structure 18 and the second conductive structure 19 can be conductive pillars, conductive blind holes, or conductive blind slots, and can be set according to actual needs.

[0179] It is understandable that, in order to prevent the first dielectric layer 301, the second dielectric layer 401, and the third dielectric layer 16 from filling the first gap 5, the first channel 6, and the second channel 7 during the hot pressing process, the first dielectric layer 301, the second dielectric layer 401, and the third dielectric layer 16 should all be made of materials with low fluidity.

[0180] The present invention also provides a circuit board.

[0181] The circuit board of this invention includes at least one of the packaging structures described in the above embodiments.

[0182] The above-described embodiments are only used to illustrate the technical solutions of the present invention, and are not intended to limit it. Although the present invention has been described in detail with reference to the foregoing embodiments, those skilled in the art should understand that modifications can still be made to the technical solutions described in the foregoing embodiments, or equivalent substitutions can be made to some of the technical features. Such modifications or substitutions do not cause the essence of the corresponding technical solutions to deviate from the spirit and scope of the technical solutions of the embodiments of the present invention, and should all be included within the protection scope of the present invention.

Claims

1. A packaging structure, characterized in that, include: A circuit board, wherein a pre-embedded groove is provided on the circuit board, and the pre-embedded groove penetrates the circuit board along the thickness direction of the circuit board; An embedded component group is provided in the embedded groove, and a first gap is provided between the outer peripheral surface of the embedded component group and the inner peripheral surface of the embedded groove. A first add-in structure is disposed on one side of the circuit board in the thickness direction, and the pre-embedded device group is connected to the first add-in structure. The second add-in structure is disposed on the other side of the circuit board in the thickness direction, and the embedded device group is connected to the second add-in structure. The circuit board is provided with a first channel, one end of the first channel is connected to the first gap, the other end of the first channel extends to the side edge of the circuit board in a direction perpendicular to the thickness direction of the circuit board, and the other end of the first channel is connected to the outside of the circuit board.

2. The packaging structure according to claim 1, characterized in that, The pre-embedded device group includes a single pre-embedded device; or The pre-embedded device group includes multiple pre-embedded devices, and a second gap is provided between the multiple pre-embedded devices, the second gap being connected to the first gap.

3. The packaging structure according to claim 1, characterized in that, It also includes a second channel, which sequentially passes through the first layer structure, the circuit board, and the second layer structure, and is connected to the first gap.

4. The packaging structure according to claim 1, characterized in that, It also includes a third channel, which sequentially passes through the first add-on structure, the circuit board, and the second add-on structure, and is connected to the first channel.

5. The packaging structure according to claim 1, characterized in that, It also includes a fourth channel that extends through the first layer structure to the first channel and is connected to the first channel.

6. The packaging structure according to claim 1, characterized in that, It also includes a fifth channel that extends through the first layered structure to the first gap and is connected to the first gap.

7. The packaging structure according to claim 1, characterized in that, It also includes a sixth channel, which extends through the second layer structure to the first channel and is connected to the first channel.

8. The packaging structure according to claim 1, characterized in that, It also includes a seventh channel that extends through the second layered structure to the first gap and is connected to the first gap.

9. The packaging structure according to claim 1, characterized in that, The first layer addition structure includes at least one first dielectric layer and at least one first metal layer. The first dielectric layer and the first metal layer are alternately disposed on one side of the circuit board along a direction away from the circuit board in the thickness direction, and the first metal layer is electrically connected to the embedded device. The second layer addition structure includes at least one second dielectric layer and at least one second metal layer, wherein the second dielectric layer and the second metal layer are alternately disposed on the other side of the circuit board in a direction away from the circuit board, and the second metal layer is electrically connected to the embedded device.

10. The packaging structure according to claim 1, characterized in that, The circuit board includes a first core board, a second core board, and an intermediate core board. The intermediate core board is disposed between the first core board and the second core board, and a third dielectric layer is disposed between the first core board and the intermediate core board, as well as between the second core board and the intermediate core board. In the thickness direction of the circuit board, the embedded groove sequentially penetrates the first core board, the third dielectric layer, the intermediate core board, the third dielectric layer, and the second core board, and the first channel penetrates the intermediate core board.

11. The packaging structure according to claim 10, characterized in that, The intermediate core board includes a single-layer intermediate sub-core board; or The intermediate core board includes multiple intermediate sub-core boards, and the third dielectric layer is provided between the multiple intermediate sub-core boards.

12. A packaging method, characterized in that, This includes the following operations: Obtain a circuit board having at least one embedded groove and a first channel extending through it along its thickness direction, one end of the first channel being connected to the embedded groove, and the other end of the first channel being spaced apart from the side edge of the circuit board, or the other end of the first channel being connected to the side edge of the circuit board. A pre-embedded device group is obtained and placed in the pre-embedded groove. A first layer structure and a second layer structure are processed on both sides of the circuit board in the thickness direction to fix the pre-embedded device group. A first gap is provided between the outer peripheral surface of the pre-embedded device group and the inner peripheral surface of the pre-embedded groove, and one end of the first channel is connected to the first gap to form a semi-finished packaging structure. The side edge of the semi-finished packaging structure is cut to expose the first channel and connect it to the outside, or no cutting is performed; thus, the packaging structure is obtained.

13. The packaging method according to claim 12, characterized in that, If the pre-embedded device group includes multiple pre-embedded devices, a second gap is provided between the multiple pre-embedded devices, and the second gap is connected to the first gap.

14. The packaging method according to claim 12, characterized in that, It also includes the following operation: setting a second channel on the packaged semi-finished product, the second channel passing through the first layer structure, the circuit board, and the second layer structure in sequence, and the second channel being connected to the first gap.

15. The packaging method according to claim 12, characterized in that, It also includes the following operation: setting a third channel on the packaged semi-finished product, wherein the third channel passes through the first layer structure, the circuit board, and the second layer structure in sequence, and the third channel is connected to the first channel.

16. The packaging method according to claim 12, characterized in that, It also includes the following operation: providing a fourth channel on the packaged semi-finished product, the fourth channel extending through the first layer structure to the first channel, and the fourth channel being connected to the first channel.

17. The packaging method according to claim 12, characterized in that, It also includes the following operation: providing a fifth channel on the packaged semi-finished product, the fifth channel extending through the first layered structure to the first gap, and the fifth channel being connected to the first gap.

18. The packaging method according to claim 12, characterized in that, It also includes the following operation: providing a sixth channel on the packaged semi-finished product, the sixth channel extending through the second add-on structure to the first channel, and the sixth channel being connected to the first channel.

19. The packaging method according to claim 12, characterized in that, It also includes the following operation: providing a seventh channel on the packaged semi-finished product, the seventh channel extending through the second layer structure to the first gap, and the seventh channel being connected to the first gap.

20. The packaging method according to claim 12, characterized in that, Processing the first layer structure and the second layer structure on both sides of the circuit board in the thickness direction includes the following operations; At least one first dielectric layer and at least one first metal layer are alternately disposed on one side of the circuit board in the thickness direction, and the first metal layer is electrically connected to the embedded device. At least one second dielectric layer and at least one second metal layer are alternately disposed on the other side of the circuit board in the thickness direction, and the second metal layer is electrically connected to the embedded device.

21. The packaging method according to claim 12, characterized in that, Obtaining the circuit board involves the following operations: Obtain the first core board, the second core board, the intermediate core board, and the third dielectric layer; A first through groove is machined through the intermediate core board along its thickness direction, and the first through groove is spaced apart from the side edge of the intermediate core board. The first core board and the second core board are laminated to both sides of the intermediate core board in the thickness direction through a third dielectric layer; A pre-embedded groove is processed so that it sequentially penetrates the first core board, the third dielectric layer, the intermediate core board, the third dielectric layer, and the second core board.

22. The packaging method according to claim 21, characterized in that, The intermediate core board includes a single-layer intermediate sub-core board; or The intermediate core board includes multiple intermediate sub-core boards, and the third dielectric layer is disposed between the multiple intermediate sub-core boards.

23. A circuit board, characterized in that, The circuit board includes at least one packaging structure as described in any one of claims 1-11.

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