A perovskite / crystalline silicon tandem solar cell preparation method, cell and application
By introducing an intrinsic heterojunction tunneling layer with hybrid SAM into perovskite/crystalline silicon solar cells, the problems of low light transmittance and lateral recombination loss in the tunneling layer are solved, achieving high-efficiency photoelectric conversion and improved stability, making it suitable for the field of space photovoltaics.
Patent Information
- Application Number
- CN202610222572.7
- Authority / Receiving Office
- CN · China
- Patent Type
- Patents(China)
- Current Assignee / Owner
- Filing Date
- 2026-02-25
- Publication Date
- 2026-06-26
- Estimated Expiration
- 2046-02-25
AI Technical Summary
The low light transmittance of the tunneling layer in traditional perovskite/crystalline silicon solar cells leads to light reflection and absorption losses, affecting photoelectric conversion efficiency. At the same time, the lateral conductivity causes electron-hole recombination losses, and the cells are not stable enough in extreme environments.
An intrinsic heterojunction tunneling layer using a mixture of N-type and P-type SAMs was prepared by solution method to form a three-dimensional interpenetrating contact network on a crystalline silicon bottom cell, thereby optimizing the tunneling layer performance, reducing light absorption loss and suppressing lateral charge recombination.
It significantly improves photoelectric conversion efficiency and stability, enhances light transmittance, reduces non-recombination loss, and extends service life, making it suitable for space photovoltaic applications.