Radio frequency module and electronic equipment

Abstract

The invention relates to a radio frequency module and electronic equipment, and the radio frequency module comprises two power modules, each power module is used for providing a power supply voltage; at least three power amplification modules, wherein each power amplification module is used for supporting power amplification of the radio frequency signal of the target frequency band; wherein the target frequency bands of the power amplification modules are different; the two first ends of the switch module are connected with the two power amplification modules respectively, and the two second ends of the switch module are correspondingly connected with the two power supply modules respectively; each of the remaining power amplification modules is correspondingly connected with one power supply module, and the connected power supply modules are different; wherein the switch module has a plurality of switching states, in different switching states, each power supply module is connected with one power amplification module in a conducting manner, and the power amplification modules connected with the power supply modules in a conducting manner are different, so that a dual-connection mode is supported, the cost is low, and the occupied area is small.

Description

Technical Field

[0001] This application relates to the field of power supply technology, and in particular to a radio frequency module and electronic device. Background Technology

[0002] With the rapid development of mobile terminals, users have increasingly higher requirements for the communication quality of mobile terminals. At present, mobile communication systems, such as mobile phones, tablets, and wearable devices, sometimes require simultaneous transmission of signals on two frequency bands.

[0003] Generally, electronic devices are equipped with multiple power amplifier modules to support various combinations of dual transmissions, and each power amplifier module is equipped with a corresponding RF power chip to power it, which is costly and occupies a large area. Summary of the Invention

[0004] This application provides a radio frequency module and electronic device that can support dual-transmission modes such as ENDC, UL CA and DSDA of various combinations of dual-band radio frequency signals, and has low cost and small footprint.

[0005] In a first aspect, embodiments of this application provide a radio frequency module, comprising:

[0006] Two power modules, each of which is used to provide the power supply voltage;

[0007] At least three power amplification modules, each of which is used to support power amplification of radio frequency signals in the target frequency band; wherein the target frequency band of each power amplification module is different;

[0008] A switching module is provided, wherein its two first terminals are respectively connected to two power amplifier modules, and its two second terminals are respectively connected to two power supply modules; each of the remaining power amplifier modules is connected to a different power supply module.

[0009] The switching module has multiple switching states. In different switching states, each power module is connected to a power amplifier module, and the power amplifier modules connected to each power module are different to support dual connection mode.

[0010] Secondly, embodiments of this application provide an electronic device including the radio frequency module as described above.

[0011] The aforementioned RF module and electronic device include two power supply modules, at least three power amplifier modules, and a switching module. The two first terminals of the switching module are respectively connected to two of the power amplifier modules, and the two second terminals of the switching module are respectively connected to the two power supply modules. The switching module has multiple switching states. In different switching states, each power supply module is connected to one power amplifier module. That is, the two power supply modules can simultaneously power two different power amplifier modules, thereby supporting power amplification of two RF signals to support dual-connection mode. By adding a switching module and controlling it to be in different switching states, each power amplifier module can be connected to a matching power supply module when used for dual-connection with different dual-band combinations. This eliminates the need to add additional power supply modules or power amplifier modules to the RF module; instead, existing power supply modules or power amplifier modules are reused, saving on power supply module or power amplifier module configuration, reducing the cost of the RF module, and also reducing the area occupied by the RF module. Attached Figure Description

[0012] To more clearly illustrate the technical solutions in the embodiments of this application or the conventional technology, the drawings used in the description of the embodiments or the conventional technology will be briefly introduced below. Obviously, the drawings described below are only some embodiments of this application. For those skilled in the art, other drawings can be obtained based on these drawings without creative effort.

[0013] Figure 1 This is one of the schematic diagrams of the radio frequency module architecture in one embodiment;

[0014] Figure 2 This is a second schematic diagram of the radio frequency module architecture in one embodiment;

[0015] Figure 3 This is the third schematic diagram of the radio frequency module architecture in one embodiment;

[0016] Figure 4 This is the fourth schematic diagram of the radio frequency module architecture in one embodiment;

[0017] Figure 5 This is the fifth schematic diagram of the radio frequency module architecture in one embodiment;

[0018] Figure 6 This is the sixth schematic diagram of the radio frequency module architecture in one embodiment;

[0019] Figure 7 This is a schematic diagram of the architecture of an electronic device in one embodiment. Detailed Implementation

[0020] To facilitate understanding of this application, a more complete description will be provided below with reference to the accompanying drawings, which illustrate embodiments of the present application. However, this application can be implemented in many different forms and is not limited to the embodiments described herein. Rather, these embodiments are provided so that the disclosure of this application will be thorough and complete.

[0021] Unless otherwise defined, all technical and scientific terms used herein have the same meaning as commonly understood by one of ordinary skill in the art to which this application belongs. The terminology used herein is for the purpose of describing particular embodiments only and is not intended to be limiting of the application.

[0022] It is understood that the terms "first" and "second" used in this application are for descriptive purposes only and should not be construed as indicating or implying relative importance or implicitly specifying the number of indicated technical features. Therefore, a feature defined as "first" or "second" may explicitly or implicitly include at least one of that feature. The terms "first," "second," etc., may be used herein to describe various elements, but these elements are not limited by these terms. These terms are used only to distinguish one element from another. Furthermore, in the description of this application, "a plurality of" means at least two, such as two, three, etc., unless otherwise explicitly specified. In the description of this application, "several" means at least one, such as one, two, etc., unless otherwise explicitly specified.

[0023] It should be noted that when one element is considered to be "connected" to another element, it can be directly connected to the other element or connected to the other element through an intermediary element. Furthermore, in the following embodiments, "connection" should be understood as "electrical connection," "communication connection," etc., if there is transmission of electrical signals or data between the connected objects.

[0024] When used herein, the singular forms of “a,” “an,” and “ / the” may also include the plural forms unless the context clearly indicates otherwise. It should also be understood that the terms “comprising / including” or “having,” etc., specify the presence of the stated features, wholes, steps, operations, components, parts, or combinations thereof, but do not preclude the possibility of the presence or addition of one or more other features, wholes, steps, operations, components, parts, or combinations thereof. Meanwhile, the term “and / or” as used in this specification includes any and all combinations of the associated listed items.

[0025] In one embodiment, this application provides a radio frequency module applicable to an electronic device. Exemplarily, the electronic device may specifically be user equipment (UE), an access terminal, a terminal unit, a terminal station, a mobile station, a mobile station, a remote station, a remote terminal, a mobile device, a wireless communication device, a terminal agent, or a terminal apparatus, etc. The access terminal may be a cellular phone, a cordless phone, a session initiation protocol (SIP) phone, a wireless local loop (WLL) station, a personal digital assistant (PDA), a mobile phone, a computer, a laptop computer, a handheld computing device (e.g., a tablet), and other devices used for communication over a wireless system.

[0026] like Figure 1 and Figure 2 As shown, this application embodiment provides an RF module, including: at least three power amplifier modules 110, two power supply modules 120, and a switching module 130. The two power supply modules 120 each provide a supply voltage. The two power supply modules 120 can be referred to as a first power supply module and a second power supply module. The first power supply module and the second power supply module can operate simultaneously, and each power supply module can provide a supply voltage adapted to the connected power amplifier module 110. At any given time, one power supply module 120 is connected to only one power amplifier module 130 to supply power to it, enabling the power amplifier module 110 to support power amplification processing of RF signals. Both the first power supply module and the second power supply module are DC power supply modules 120. Both the first power supply module and the second power supply module can be Buck-Boost power supplies. Optionally, one of the first power supply module and the second power supply module is a Buck power supply, and the other of the first power supply module and the second power supply module can be a Buck-Boost power supply.

[0027] Each power amplifier module 110 can receive a power supply voltage from the power supply module 120 to support power amplification of radio frequency signals in the target frequency band. In this embodiment, the target frequency bands supported by each power amplifier module 110 for each radio frequency signal are different. For example, the target frequency band may include one of low frequency, intermediate frequency, high frequency, and ultra-high frequency. It should be noted that the target frequency band may include multiple target sub-frequency bands. The sub-frequency bands corresponding to the low frequency band may include at least two of B5, B8, B12, B13, B14, B17, B18, B19, B20, B26, B28A, N5, N8, N12, N13, N14, N17, N18, N19, N20, N26, and N28A. The sub-bands corresponding to the intermediate frequency band may include at least two of B1, B2, B3, B4, B25, B34, B39, B66, N1, N2, N3, N4, N25, N34, N39, and N66. The sub-bands corresponding to the high frequency band may include at least two of B7, B30, B38, B40, B41, N7, N30, N38, N40, and N41.

[0028] Optionally, each power amplification module 110 may include at least one power amplifier to support power amplification of radio frequency signals in the target frequency band. Exemplarily, the power amplifier may be one of a low-frequency power amplifier (LB PA), an intermediate-frequency power amplifier (MB PA), a high-frequency power amplifier (HB PA), and an ultra-high-frequency power amplifier (UHB PA). The low-frequency radio frequency signal may include 4G or 5G low-frequency signals; the intermediate-frequency radio frequency signal may include 4G or 5G intermediate-frequency signals; and the high-frequency radio frequency signal may include 4G or 5G high-frequency signals. The ultra-high-frequency radio frequency signal may include 5G ultra-high-frequency signals, such as N77, N78, N79, etc.

[0029] The two first terminals of the switch module 130 are respectively connected to two power amplifier modules 110, and the two second terminals of the switch module 130 are respectively connected to two power supply modules 120; each remaining power amplifier module 110 is connected to a power supply module 120, and the connected power supply modules 120 are different. The switch module 130 can selectively open the path between any power supply module 120 and the two connected power amplifier modules 110.

[0030] The switching module 130 has multiple switching states. In different switching states, each power module 120 is connected to a power amplifier module 110, and the power amplifier modules 110 connected to each power module 120 are different, so that the RF module supports dual-connection mode. Dual-connection mode can be understood as at least two of the three power amplifier modules 110 operating simultaneously to support the transmission of two RF signals. In dual-connection mode, the switching module 130 has multiple switching states, allowing two power modules 120 to simultaneously power two different power amplifier modules 110, thereby supporting power amplification of two RF signals to achieve dual transmission. For example, the RF module includes three power amplifier modules 110, and by controlling the switching module 130, three different dual-band combinations of dual-connection modes can be supported. For example, dual connectivity modes may include non-standalone (NSA) mode, dual SIM dual active (DSDA) mode, and uplink carrier aggregation (UL CA) mode.

[0031] The radio frequency module provided in this application includes two power supply modules, at least three power amplifier modules, and a switching module. The two first terminals of the switching module are respectively connected to the two power amplifier modules, and the two second terminals are respectively connected to the two power supply modules. The switching module 130 has multiple switching states. In different switching states, each power supply module is connected to one power amplifier module. That is, the two power supply modules can simultaneously supply power to two different power amplifier modules, thereby supporting power amplification of two radio frequency signals to support dual-connection mode. To achieve the same number of dual-band combinations for dual-connection, compared to the radio frequency system in related technology 1 (which requires a power supply module for each power amplifier, this application can reduce at least one power supply module); compared to the radio frequency system in related technology 2 (which requires at least one additional power amplifier module, with each power supply connected to two power amplifier modules simultaneously), this application can reduce at least one power amplifier module. It occupies less space, has lower cost, and can also expand the number and types of dual-band combinations, thereby improving the communication performance of the radio frequency module.

[0032] In an exemplary embodiment, the radio frequency module may include three power amplification modules 110, which may be referred to as a first power amplification module, a second power amplification module, and a third power amplification module, respectively. Two first terminals of a switching module 130 are respectively connected to the first power amplification module and the second power amplification module, and two second terminals of the switching module 130 are respectively connected to the first power supply module and the second power supply module. The first power amplification module is used to support power amplification of a first radio frequency signal. It is understood that the first power amplification module can support power amplification of the first radio frequency signal under the power supply voltage of the first power supply module or the second power supply module. The second power amplification module is used to support power amplification of a second radio frequency signal. It is understood that the second power amplification module can support power amplification of the second radio frequency signal under the power supply voltage of the first power supply module or the second power supply module. The third power amplification module is connected to the first power supply module. The third power amplification module is used to support power amplification of a third radio frequency signal. It is understood that the third power amplification module can support power amplification of the third radio frequency signal under the power supply voltage of the first power supply module. The target frequency bands of the first radio frequency signal, the second radio frequency signal, and the third radio frequency signal are different.

[0033] In this embodiment, for ease of explanation, the first radio frequency signal is a low-frequency signal, the second radio frequency signal is a medium-frequency signal, and the third radio frequency signal is a high-frequency signal.

[0034] Specifically, in the first switching state, the switching module can connect the power supply path between the first power supply and the first power amplifier module, as well as the power supply path between the second power supply and the second power amplifier module. In this state, the first power supply module can output the corresponding supply voltage to the first power amplifier module, but does not supply voltage to the third power amplifier module. In the second switching state, the switching module can connect the power supply path between the second power supply and the first power amplifier module. In this state, the second power supply module can output the corresponding supply voltage to the first power amplifier module, and the first power supply module outputs the corresponding supply voltage to the third power amplifier module. In the third switching state, the switching module can connect the power supply path between the second power supply and the second power amplifier module. In this state, the second power supply module can output the corresponding supply voltage to the second power amplifier module, and the first power supply module outputs the corresponding supply voltage to the third power amplifier module.

[0035] In this embodiment, by controlling the different switching states of the switch module, the RF module can simultaneously support dual-connection modes for these three dual-band combinations. The three dual-band combinations may include a first combination of low frequency and intermediate frequency, a second combination of low frequency and high frequency, and a third combination of intermediate frequency and high frequency. Thus, by adding a switch module and controlling its different switching states, each power amplifier module can connect to a matching power supply module when used for dual-connection in different dual-band combinations. This eliminates the need for additional power supply or power amplifier modules in the RF module; instead, existing power supply or power amplifier modules are reused, saving on power supply or power amplifier module configuration, reducing the cost of the RF module, and minimizing its footprint.

[0036] In one exemplary embodiment, the three power amplifier modules can be independent power amplifier modules, each packaged independently of the others. For example, each power amplifier module can be a PA Mid device.

[0037] Optionally, at least two of the three power amplifier modules can also be packaged in the same module. For example, if the first power amplifier module is used to support power amplification of low-frequency signals, the second power amplifier module is used to support power amplification of intermediate-frequency signals, and the third power amplifier module is used to support power amplification of high-frequency signals, the first power amplifier module can be a separately packaged L-PA Mid device, such as... Figure 3 As shown, the second and third power amplifier modules can be integrated and packaged in the same device, such as an MH-A Mid device. Alternatively, the first, second, and third power amplifier modules can also be integrated and packaged in the same device (e.g., an MMPA device).

[0038] In this embodiment, at least two power amplifier modules 110 can be integrated and packaged in the same device, which can reduce the area occupied by the RF module, improve its integration, and thus facilitate the miniaturization design of the RF module.

[0039] Please continue to refer to this. Figure 3In one exemplary embodiment, the radio frequency module may include four power amplification modules: a first power amplification module 111, a second power amplification module 112, a third power amplification module 113, and a fourth power amplification module 114. The connections of the first, second, and third power amplification modules 111, 112, and 113 to the power supply module 120 remain unchanged. The fourth power amplification module 114 is connected to the second power supply module and, under the power supply voltage provided by the second power supply module, supports power amplification of the fourth radio frequency signal. The first, second, third, and fourth radio frequency signals have different frequency bands. In this embodiment, the two first terminals of the switch module 130 are connected to the first power amplification module 111 and the second power amplification module 112, respectively, and the two second terminals of the switch module 130 are connected to the first power supply module 121 and the second power supply module 122, respectively. The third power amplification module 113 is connected to the first power supply module 121, and the fourth power amplification module 114 is connected to the second power supply module 122.

[0040] Optionally, the two first terminals of the switch module 130 can be connected to any two power amplifier modules 110, and the remaining two power amplifier modules 110 can be connected to the two power supply modules 120 respectively. The remaining two power amplifier modules 110 can be understood as the power amplifier modules 110 other than those connected to the switch module 130 out of the four power amplifier modules 110.

[0041] For ease of explanation, the following example illustrates the use of a low-frequency radio frequency (RF) signal, a mid-frequency (IF) RF signal, a high-frequency (HF) RF signal, and an ultra-high-frequency (UHF) RF signal. In this embodiment, by controlling the various switching states of the switch module 130, the RF module can support six dual-band combination dual-connection modes. For example, the RF module can support dual-connection modes of LB+MB, LB+HB, LB+UHB, MB+HB, MB+UHB, and HB+UHB.

[0042] Please continue to refer to this. Figure 3 In one exemplary embodiment, the switch module 130 includes a first switch 131 and a second switch 132, wherein the first end of the first switch 131 is connected to the first power amplifier module 111, and the two second ends of the first switch 131 unit are respectively connected to the first power supply module 121 and the second power supply module 122; the first end of the second switch 132 is connected to the second power amplifier module 112, and the two second ends of the second switch 132 unit are respectively connected to the first power supply module 121 and the second power supply module 122.

[0043] Exemplarily, the first switch 131 and the second switch 132 may each be a single-pole double-throw (SPDT) switch. Optionally, the first switch 131 and the second switch 132 may further include two single-pole single-throw (SPDT) switches to be equivalent to an SPDT switch. Optionally, the first switch 131 and the second switch 132 may also be composed of other devices with switching functions, such as switches composed of MOSFETs. In the embodiments of this application, the specific types of the first switch 131 and the second switch 132 are not limited, nor are they limited to the examples described above.

[0044] Optionally, the switch module 130 may include a multi-channel switching switch. The two first terminals of the multi-channel switching switch are respectively connected to the first power amplifier module 111 and the second power amplifier module 112; the two second terminals of the multi-channel switching switch are respectively connected to the first power supply module 121 and the second power supply module 122. The multi-channel switching switch can replace the aforementioned first switch 131 and second switch 132, but can achieve the functions of the first switch 131 and second switch 132. Thus, by using a multi-channel switching switch and controlling its on / off state, the RF module can support six dual-band combination dual-connection modes, further improving the integration of the RF module.

[0045] In an exemplary embodiment, when the first radio frequency signal is a low-frequency radio frequency signal, the second radio frequency signal is an intermediate-frequency radio frequency signal, the third radio frequency signal is a high-frequency radio frequency signal, and the fourth radio frequency signal is an ultra-high-frequency radio frequency signal, the first power supply module 121 may have an average power point tracking (APT) mode, which can provide corresponding supply voltages to the first power amplifier module 111, the second power amplifier module 112, and the third power amplifier module 113. The second power supply module 122 has an envelope tracking (ET) mode, which can provide corresponding supply voltages to the first power amplifier module 111, the third power amplifier module 113, and the fourth power amplifier module 114. The maximum supply voltage provided by the power supply module 120 in APT mode is less than the maximum supply voltage provided by the power supply module 120 in ET mode.

[0046] Optionally, both the first power module 121 and the second power module 122 may have envelope tracking (ET) mode.

[0047] Since the ET mode power module 120 has a higher cost than the APT mode power module 120, and the ET mode power module 120 has a higher power consumption reduction capability than the APT mode power module 120, in order to balance cost and power consumption, the RF module can adopt a first power module 121 with average power tracking (APT) mode and a second power module 122 with envelope tracking (ET) mode.

[0048] like Figure 4 and Figure 5As shown, in an exemplary embodiment, the RF module may further include an RF transceiver 140, which is connected to each power module 120 and the switching module 130 respectively, for controlling the power supply voltage output by each power module 120 and the switching state of the switching module 130 according to the target dual connection mode, so as to provide an adapted power supply voltage for the two power amplifier modules 110 in the target dual connection mode.

[0049] The RF transceiver 140 may be configured with RF output terminals respectively connected to each power amplifier module, such as low-frequency output terminal, intermediate-frequency output terminal, high-frequency output terminal, and ultra-high-frequency output terminal. The RF transceiver 140 can output RF signals for corresponding frequency bands to each power amplifier module. In addition, the RF transceiver 140 is also configured with a switch control terminal connected to the switch module 130, a first power control terminal connected to the first power module 121, and a second power control terminal connected to the second power module 122. The RF transceiver 140 can send switch control signals to the switch module 130 through the switch control terminal according to the two frequency bands in the target dual-connection mode, so as to control the switching state of the switch module 130. The radio frequency transceiver 140 can send signals to the first power module 121 through the first power control terminal and to the second power module 122 through the second power control terminal according to the two frequency bands in the target dual-connection mode, so as to control the first power module 121 and the second power module 122 to provide suitable power supply voltages for the corresponding two power amplifier modules 110, so that the two power amplifier modules 110 work simultaneously to support the target dual-connection mode.

[0050] For example, the switch module 130 includes a first switch 131 and a second switch 132. The switch control terminal may include a first switch control terminal and a second switch control terminal, with the first switch control terminal connected to the first switch 131 and the second switch control terminal connected to the second switch 132. The RF transceiver 140 can control the on / off states of the first switch 131 and the second switch 132 respectively through the first switch control terminal and the second switch control terminal, enabling the RF module to support dual-connection modes with multiple dual-band combinations. Optionally, the port types of the first switch control terminal, the second switch control terminal, the first power control terminal, and the second power control terminal may include one of MIPI and GPIO terminals. In this embodiment, the port type of the switch control terminal is not limited.

[0051] In this embodiment, the switching state of the switch module 130 and the power supply voltage of the two power modules 120 in the RF module can be directly controlled by the RF transceiver 140 without the need for an additional controller, which can further reduce the cost of the RF module. At the same time, the RF transceiver 140 can directly control the switching state of the switch module 130 and adjust the power supply voltage of the power modules 120 based on the target dual-connection mode, which can improve the response speed of the switching state control of the switch module 130 and the power supply voltage adjustment, thereby improving the switching speed of the RF module in realizing dual-connection modes with different dual-band combinations, so as to improve the communication performance of the RF module.

[0052] For ease of explanation, taking the first switch 131 as an SPDT1 switch, the second switch 132 as an SPDT2 switch, the first power module 121 as a Buck power module 120, and the second power module 122 as a Buck-Boost power module 120 as examples, we can illustrate that the RF module can support six dual-band combination dual-connection modes, such as NSA mode, DSDA mode, and UL CA mode, as shown in Table 1.

[0053] Table 1 shows the correspondence between the conduction states of the first switch 131 and the second switch 132 and the dual-band combination.

[0054]

[0055] In the table, the first switch 131 or the second switch 132 is left floating, which can be understood as the first switch 131 or the second switch 132 not working.

[0056] First combination (LB+MB):

[0057] The SPDT1 is switched to 2, and the first power module 121 supplies power to the second power amplifier module 112 (e.g., MB PA), and the second power module 122 supplies power to the first power amplifier module 111 (e.g., LB PA) to support the dual connection mode of LB+MB.

[0058] Second combination (LB+HB):

[0059] The SPDT2 is switched to 1 and the SPDT1 is switched to 2. The first power module 121 supplies power to the third power amplifier module 113 (e.g., HB PA), and the second power module 122 supplies power to the first power amplifier module 111 (e.g., LB PA) to support the dual connection mode of LB+HB.

[0060] Optionally, SPDT2 is switched to 2 and SPDT1 is switched to 1, so that the first power amplifier module 111 (e.g., LB PA) is powered by the first power module 121 and the third power amplifier module 113 (e.g., HB PA) is powered by the second power module 122, so as to support the dual connection mode of LB+HB.

[0061] Third combination (LB+UHB):

[0062] The SPDT2 is switched to 1, and the first power module 121 supplies power to the first power amplifier module 111 (e.g., LB PA), and the second power module 122 supplies power to the fourth power amplifier module 114 (e.g., UHB PA) to support the dual connection mode of LB+UHB.

[0063] Fourth combination (MB+HB):

[0064] When SPDT1 is not in operation, SPDT2 is switched to 2, and the first power module 121 supplies power to the third power amplifier module 113 (e.g., HB PA), and the second power module 122 supplies power to the second power amplifier module 112 (e.g., MB PA) to support the dual connection mode of MB+HB.

[0065] Fifth combination (MB+UHB):

[0066] SPDT1 and SPDT2 are both disabled. The first power module 121 supplies power to the second power amplifier module 112 (e.g., MB PA), and the second power module 122 supplies power to the fourth power amplifier module 114 (e.g., UHB PA) to support the dual connection mode of MB+UHB.

[0067] Sixth combination (HB+UHB):

[0068] When SPDT2 is switched to position 1, SPDT2 is not working. The first power module 121 supplies power to the third power amplifier module 113 (e.g., HB PA), and the second power module 122 supplies power to the fourth power amplifier module 114 (e.g., UHB PA) to support the dual connection mode of HB+UHB.

[0069] In this embodiment, by setting two SPDT switches and controlling their switching states, dual connection modes such as NSA, DSDA, and UL CA combinations of LB+MB, LB+HB, LB+UHB, MB+HB, MB+UHB, and HB+UHB can be achieved without adding a power amplifier module. The price of the switch module is much lower than that of the power amplifier or power supply module, which can reduce the cost of the RF module while expanding the number and types of dual-band combinations, thereby improving the communication performance of the RF module.

[0070] The first switch 131 and the second switch 132 in the aforementioned embodiments can switch between different power supplies. In addition, the first switch 131 and the second switch 132 in this embodiment have overcurrent protection (OCP) function, and can be understood as power switches. The first switch 131 and the second switch 132 can detect the electrical parameters of the power amplifier in the power amplifier module 110 connected to them. The electrical parameters can be at least one of power parameters, voltage parameters, and current parameters. For example, the first switch 131 is further used to disconnect the power supply path of the first power amplifier module 111 when the electrical parameters of the first power amplifier module 111 are higher than a preset threshold. The second switch 132 is further used to disconnect the power supply path of the second power amplifier module 112 when the electrical parameters of the second power amplifier module 112 are higher than a preset threshold. It should be noted that different preset thresholds correspond to different electrical parameters. The preset thresholds corresponding to different electrical parameters can be determined according to the device model and parameters of the power amplifier in the power amplifier module 110. In this embodiment, the specific numerical value of the preset thresholds corresponding to different electrical parameters is not limited.

[0071] Specifically, the first switch 131 and the second switch 132 may incorporate processing circuitry, which may include a processor, registers, and detection devices for relevant electrical parameters. When the processing circuitry detects that an electrical parameter exceeds a preset threshold, it can determine that the MOSFET inside the power amplifier is highly likely to be damaged. In this case, the first switch 131 and the second switch 132 can actively disconnect the path between the power amplifier module 110 and the corresponding power supply module 120, thus protecting the power amplifier module 110 and the corresponding power supply module 120 from further damage. This also protects the first switch 131 and the second switch 132 themselves from damage, thereby improving the safety and lifespan of the RF module.

[0072] In one exemplary embodiment, the two power modules 120 and the switch module 130 can be integrated into the same package device, such as a power chip. The power chip is configured with at least three power terminals, which are respectively connected to at least three power amplifier modules 110. By integrating the two power modules 120 and the switch module 130 into the same device, the integration level of the RF module can be improved, its space occupation can be reduced, and it is beneficial to the miniaturization design of the RF module.

[0073] like Figure 6As shown, in an exemplary embodiment, the power chip is configured with a first input terminal, a second input terminal, a third input terminal, and at least three power supply terminals. The first input terminal, the second input terminal, and the third input terminal can be understood as the input terminals of the power chip, which can be used to receive external power signals. The voltage of the external power signals received by each input terminal can be the same or different. Each power supply terminal of the power chip can be connected to each power amplifier module 110 to provide an appropriate power supply voltage to each power amplifier module 110. In this embodiment, the number of power supply terminals of the power chip is greater than or equal to the number of power amplifiers to ensure that each power amplifier has a corresponding power supply terminal. For ease of explanation, the example given is that the number of power supply terminals of the power chip is the same as the number of power amplifiers in the RF module. The power chip includes a boost unit 1201, a first voltage drop unit 1202, a second voltage drop unit 1203, and a switching module 130. One of the two power modules 120 includes the first voltage drop unit 1202 and the boost unit 1201, and the other of the two power modules 120 includes the second voltage drop unit 1203 and the boost unit 1201. For example, the first voltage drop unit 1202 and the boost unit 1201 can constitute a first power module 121, and the second voltage drop unit 1203 and the boost unit 1201 can constitute a second power module 122. It is understood that the first power module 121 and the second power module 122 can reuse the same boost unit 1201.

[0074] The two first terminals of the switching module 130 can be connected one-to-one with the output terminal of the first voltage drop unit 1202 and the input terminal of the second voltage drop unit 1203, respectively. The at least three second terminals of the switching module 130 are respectively connected to at least three power supply terminals. For example, if there are three power amplifier modules, the power supply chip can be configured with three power supply terminals, which can be connected to the three power amplifier modules respectively. That is, the three second terminals of the switching module 130 can be connected one-to-one with the three power supply terminals of the power supply chip.

[0075] The input terminal of the boost unit 1201 is connected to the first input terminal of the power chip. The boost unit 1201 can boost the received external power signal. The first output terminal of the boost unit 1201 can be connected to the input / output terminal of the first voltage drop unit 1202 to output a boosted voltage signal to the first voltage drop unit 1202. The second output terminal of the boost unit 1201 can be connected to the input / output terminal of the second voltage drop unit 1203 to output a boosted voltage signal to the second voltage drop unit 1203. The input terminal of the first voltage drop unit 1202 is connected to the second input terminal, and the input / output terminal of the first voltage drop unit 1202 is connected to the first output terminal of the boost unit 1201. The output terminal of the first voltage drop unit 1202 is connected to a first terminal of the switch module 130. In this embodiment, the first voltage drop unit 1202 can receive an external power signal from the second input terminal, and can also receive a voltage signal boosted by the boost unit 1201. The first voltage drop unit 1202 can step down the received signal, and the stepped-down signal can be output to the corresponding power amplifier module 110 via the switching module 130. The input terminal of the second voltage drop unit 1203 is connected to the third input terminal, the input and output terminals of the second voltage drop unit 1203 are connected to the second output terminal of the boost unit 1201, and the output terminal of the second voltage drop unit 1203 is connected to the other first terminal of the switching module 130. In this embodiment, the second voltage drop unit 1203 can receive an external power supply signal from the third input terminal, and can also receive a voltage signal boosted by the boost unit 1201. The second voltage drop unit 1203 can step down the received signal, and the stepped-down signal can be output to the corresponding power amplifier module 110 via the switching module 130.

[0076] Optionally, a first capacitor C1 may be included between the first output terminal of the boost unit 1201 and the input / output terminal of the first voltage drop unit 1202. This first capacitor C1 can be externally mounted on the power supply chip. Optionally, a second capacitor C2 may be included between the second output terminal of the boost unit 1201 and the input / output terminal of the second voltage drop unit 1203. This second capacitor C2 can be externally mounted on the power supply chip. The first capacitor C1 and the second capacitor C2 can be used to stabilize the voltage signal output by the boost unit 1201 and can also filter the voltage signal to improve the stability of the voltage signal input to the first voltage drop unit 1202 or the second voltage drop unit 1203.

[0077] In an exemplary embodiment, for ease of explanation, the example is provided where the power supply chip is configured with a low-frequency power supply terminal, an intermediate-frequency power supply terminal, a high-frequency power supply terminal, and an ultra-high-frequency power supply terminal, and the switching module 130 includes two first terminals and four second terminals. The two first terminals of the switching module 130 are respectively connected to the first voltage drop unit 1202 and the second voltage drop unit 1203, and the four second terminals of the switching module 130 are respectively connected to the low-frequency power supply terminal, the intermediate-frequency power supply terminal, the high-frequency power supply terminal, and the ultra-high-frequency power supply terminal. For example, the low-frequency power supply terminal of the power supply chip can be connected to the first power amplifier module 111, the intermediate-frequency power supply terminal of the power supply chip can be connected to the second power amplifier module 112, the high-frequency power supply terminal of the power supply chip can be connected to the third power amplifier module 113, and the ultra-high-frequency power supply terminal of the power supply chip can be connected to the fourth power amplifier module 114. The power supply voltages provided by the low-frequency power supply terminal, the intermediate-frequency power supply terminal, and the high-frequency power supply terminal can be output from the output terminals of the first voltage drop unit 1202 or the second voltage drop unit 1203. However, the signals received by the first voltage drop unit 1202 or the second voltage drop unit 1203 are different. For example, if the signal received by the first voltage drop unit 1202 or the second voltage drop unit 1203 is an external power supply signal received at its respective input terminal, the power supply voltage output from the output terminal of the first voltage drop unit 1202 or the second voltage drop unit 1203 can be output through the low-frequency power supply terminal, the intermediate-frequency power supply terminal, and the high-frequency power supply terminal. If the signal received by the first voltage drop unit 1202 or the second voltage drop unit 1203 is a signal processed by the boost power supply, the power supply voltage output from the output terminal of the first voltage drop unit 1202 or the second voltage drop unit 1203 can be output through the ultra-high frequency power supply terminal.

[0078] In this embodiment, by controlling the switching state of the switch module 130 and the operating states of the boost unit 1201, the first voltage drop unit 1202, and the second voltage drop unit 1203, a suitable power supply voltage can be provided to any two power amplifier modules 110 simultaneously, thereby enabling different combinations of dual connection modes. By designing a power chip (including the switch module 130, the boost unit 1201, the first voltage drop unit 1202, and the second voltage drop unit 1203), which is configured with multiple power terminals, two of which can simultaneously output corresponding power supply voltages to the connected power amplifier modules 110 to support different combinations of dual connection modes, it can realize NSA, DSDA, UL CA combinations such as LB+MB, LB+HB, LB+UHB, MB+HB, MB+UHB, and HB+UHB. This can reduce the cost of the RF module while expanding the number and types of dual-band combinations, and can also facilitate the miniaturization design of the RF module.

[0079] In an exemplary embodiment, if the first power amplification module 111 can support power amplification of low-frequency band radio frequency signals, it can also support power amplification of GSM standard radio frequency signals. It should be noted that the low-frequency band radio frequency signals can be 4G or 5G low-frequency radio frequency signals.

[0080] For details, please continue to refer to Figure 4 and Figure 6 The first power amplification module 111 may include a first power amplification unit 1111 and a second power amplification unit 1112. The first power amplification unit 1111 is connected to the first power supply module 121 and is used to support power amplification of low-frequency radio frequency signals under the action of a first supply voltage provided by the first power supply module 121. Exemplarily, the first power amplification unit 1111 may include at least a low-frequency power amplifier, such as an LB PA.

[0081] The second power amplifier unit 1112 is connected to the first power module 121 and is used to support power amplification of the GSM radio frequency signal under the action of the second power supply voltage provided by the first power module 121. Exemplarily, the second power amplifier unit 1112 may include at least a GSM power amplifier, such as a GSM PA. In this embodiment, the second power amplifier unit 1112 may be directly connected to the first power module 121.

[0082] In this embodiment, the first power amplifier module 111 in the radio frequency module can support power amplification of low-frequency radio frequency signals of 4G or 5G, as well as power amplification of radio frequency signals of GSM standard, under the power supply voltage provided by the first power supply module 121. It can expand the frequency band range supported by the radio frequency module and improve the communication performance of the radio frequency module without increasing the power supply module 120.

[0083] The RF module provided in this application embodiment can support both dual-connectivity and single-connectivity modes. In single-connectivity mode, only one power supply powers one power amplifier module 110 at any given time. The single-connectivity mode can include 4G LTE single-connectivity mode or 5G NR SA single-connectivity mode. If the power amplifier module 110 supports power amplification of 4G LTE RF signals, it corresponds to 4G LTE single-connectivity mode; if the power amplifier module 110 supports power amplification of 5G NR RF signals, it corresponds to 5G NR SA single-connectivity mode.

[0084] Specifically, when the RF module is in single-connection mode, the switch module 130 connects the power supply path between each power amplifier module 110 and a power supply module 120. In this embodiment, for ease of explanation, each power amplifier module is used to support power amplification of 5G NR RF signals of different frequency bands, in 5G NR SA single-connection mode (e.g. Figure 5 The following explanation uses the radio frequency module shown as an example.

[0085] The SPDT1 is switched to position 1, and the SPDT2 is switched to position 2, so that the first power module 121 supplies power to the first power amplifier module 111 (e.g., LB PA) and the second power amplifier module 112 (e.g., MB PA). Specifically, the first power module 121 is connected to the power supply terminal LB VCC of the first power amplifier module 111 and the power supply terminal MB VCC of the second power amplifier module 112, respectively. The second power module 122 supplies power to the third power amplifier module 113 (e.g., HB PA) and the fourth power amplifier module 114 (e.g., UHB PA), specifically, the second power module 122 is connected to the power supply terminal HB VCC of the third power amplifier module 113 and the power supply terminal UHB VCC of the fourth power amplifier module 114, respectively, to realize the SA function.

[0086] This application also provides an electronic device including the radio frequency module of any of the foregoing embodiments. The electronic device includes two power modules, at least three power amplifier modules, and a switching module. The two first terminals of the switching module are respectively connected to two of the power amplifier modules, and the two second terminals of the switching module are respectively connected to the two power modules. The switching module has multiple switching states. In different switching states, each power module is connected to one of the power amplifier modules. That is, the two power modules can simultaneously supply power to two different power amplifier modules, thereby supporting power amplification of two radio frequency signals to support dual-connection mode. By adding a switching module and controlling it to be in different switching states, each power amplifier module can be connected to a matching power module when used for dual-connection with different dual-band combinations. Furthermore, it eliminates the need to add additional power modules or power amplifier modules to the radio frequency module; instead, it reuses existing power modules or power amplifier modules, saving on the configuration of power modules or power amplifier modules, reducing the cost of the electronic device, and also reducing the footprint of the electronic device.

[0087] like Figure 7 As shown, further explanation will be given using a mobile phone as an example for electronic device 11. Specifically, as follows... Figure 7As shown, the mobile phone may include a memory 21 (which optionally includes one or more computer-readable storage media), a processing module 22, a peripheral device interface 23, and an input / output (I / O) subsystem 26. These components optionally communicate via one or more communication buses or signal lines 29. Those skilled in the art will understand that... Figure 7 The mobile phone shown does not constitute a limitation on the mobile phone and may include more or fewer components than shown, or combine certain components, or have different component arrangements. Figure 7 The various components shown are implemented in hardware, software, or a combination of both, including one or more signal processing and / or application-specific integrated circuits.

[0088] Memory 21 optionally includes high-speed random access memory, and also optionally includes non-volatile memory, such as one or more disk storage devices, flash memory devices, or other non-volatile solid-state memory devices. Exemplary examples include software components stored in memory 21 such as an operating system 211, a communication module (or instruction set) 212, a global positioning system (GPS) module (or instruction set) 213, etc.

[0089] The processing module 22 and other control circuits (such as processing circuits in an electronic device) can be used to control the operation of the mobile phone. The processing module 22 may include one or more microprocessors, microcontrollers, digital signal processors, baseband processors, power management units, audio codec chips, application-specific integrated circuits, etc.

[0090] The processing module 22 can be configured to implement a control algorithm for controlling the use of the antenna in the mobile phone. The processing module 22 can also issue control commands for controlling various switches in the electronic device 11.

[0091] I / O subsystem 26 couples input / output peripherals on the mobile phone, such as the keypad and other input control devices, to peripheral interface 23. I / O subsystem 26 optionally includes a touchscreen, buttons, a tone generator, an accelerometer (motion sensor), an ambient light sensor and other sensors, light-emitting diodes and other status indicators, data terminals, etc. For example, a user can control the operation of the mobile phone by supplying commands via I / O subsystem 26, and can use the output resources of I / O subsystem 26 to receive status information and other outputs from the mobile phone. For example, a user can press button 261 to turn the mobile phone on or off.

[0092] The technical features of the above embodiments can be combined in any way. For the sake of brevity, not all possible combinations of the technical features in the above embodiments are described. However, as long as there is no contradiction in the combination of these technical features, they should be considered to be within the scope of this specification.

[0093] The above embodiments merely illustrate several implementation methods of this application, and while the descriptions are relatively specific and detailed, they should not be construed as limiting the scope of the invention patent. It should be noted that those skilled in the art can make various modifications and improvements without departing from the concept of this application, and these all fall within the protection scope of this application. Therefore, the protection scope of this patent application should be determined by the appended claims.

Claims

1. A radio frequency module, characterized in that, include: Two power modules, each of which is used to provide the power supply voltage; At least three power amplification modules, each of which is used to support power amplification of radio frequency signals in the target frequency band; wherein the target frequency band of each power amplification module is different; A switching module is provided, wherein its two first terminals are respectively connected to two power amplifier modules, and its two second terminals are respectively connected to two power supply modules; each of the remaining power amplifier modules is connected to a different power supply module. The switching module has multiple switching states. In different switching states, each power module is connected to a power amplifier module, and the power amplifier modules connected to each power module are different to support dual connection mode.

2. The radio frequency module according to claim 1, characterized in that, The at least three power amplifier modules include: The first power amplifier module is used to support power amplification of the first radio frequency signal; The second power amplifier module is used to support power amplification of the second radio frequency signal; The third power amplifier module is used to support power amplification of the third radio frequency signal; wherein the target frequency bands of the first radio frequency signal, the second radio frequency signal and the third radio frequency signal are different; The two power modules include a first power module and a second power module, wherein, The two first terminals of the switch module are respectively connected to the first power amplifier module and the second power amplifier module, and the two second terminals of the switch module are respectively connected to the first power supply module and the second power supply module. The third power amplifier module is connected to the first power module or the second power module.

3. The radio frequency module according to claim 2, characterized in that, The at least three power amplifier modules also include: The fourth power amplifier module is connected to the second power supply module and is used to support power amplification of the fourth radio frequency signal, wherein the first radio frequency signal, the second radio frequency signal, the third radio frequency signal, and the fourth radio frequency signal have different frequency bands.

4. The radio frequency module according to claim 3, characterized in that, The first radio frequency signal is a low-frequency radio frequency signal, the second radio frequency signal is a medium-frequency radio frequency signal, the third radio frequency signal is a high-frequency radio frequency signal, and the fourth radio frequency signal is an ultra-high-frequency radio frequency signal.

5. The radio frequency module according to claim 2, characterized in that, The switching module includes: A first switch, the first end of the first switch is connected to the first power amplifier module, and the two ends of the first switch unit are respectively connected to the first power module and the second power module; The second switch has its first end connected to the second power amplifier module, and its two second ends connected to the first power module and the second power module, respectively.

6. The radio frequency module according to claim 5, characterized in that, The first switch is also used to disconnect the power supply path of the first power amplifier module when the electrical parameters of the first power amplifier module are higher than a first preset threshold. The second switch is also used to disconnect the power supply path of the second power amplifier module when the electrical parameters of the second power amplifier module are higher than the second preset threshold.

7. The radio frequency module according to claim 2, characterized in that, The switching module includes: A multi-channel switching switch, wherein the two first terminals of the multi-channel switching switch are respectively connected to the first power amplifier module and the second power amplifier module; and the two second terminals of the multi-channel switching switch are respectively connected to the first power supply module and the second power supply module.

8. The radio frequency module according to claim 2, characterized in that, The first power amplifier module includes: The first power amplification unit is connected to the first power supply module and is used to support power amplification of low-frequency radio frequency signals under the action of the first power supply voltage provided by the first power supply module. The second power amplifier unit is connected to the second power supply module and is used to support power amplification of the GSM standard radio frequency signal under the action of the second power supply voltage provided by the first power supply module.

9. The radio frequency module according to claim 1, characterized in that, The two power modules and the switch module are integrated into the same power chip, which is configured with a first input terminal, a second input terminal, a third input terminal, and at least three power supply terminals. The power chip includes: A boost unit, wherein the input terminal of the boost unit is connected to the first input terminal; The first voltage drop unit has its input terminal connected to the second input terminal, its input and output terminals connected to the first output terminal of the boost unit, and its output terminal connected to a first terminal of the switching module. The second voltage drop unit has its input terminal connected to the third input terminal, its input and output terminals connected to the second output terminal of the boost unit, and its output terminal connected to the other first terminal of the switching module. The at least three output terminals of the switching module are respectively connected to the at least three power supply terminals; wherein, One of the two power modules includes the first voltage drop unit and the boost unit, and the other of the two power modules includes the second voltage drop unit and the boost unit.

10. The radio frequency module according to claim 9, characterized in that, The at least three power supply terminals include a low-frequency power supply terminal, a medium-frequency power supply terminal, a high-frequency power supply terminal, and an ultra-high-frequency power supply terminal. The low-frequency power supply terminal is connected to the first power amplifier module, the medium-frequency power supply terminal is connected to the second power amplifier module, the high-frequency power supply terminal is connected to the third power amplifier module, and the ultra-high-frequency power supply terminal is connected to the fourth power amplifier module. The two first terminals of the switching module are respectively connected to the first voltage drop unit and the second voltage drop unit; the four second terminals of the switching module are respectively connected to the low-frequency power supply terminal, the medium-frequency power supply terminal, the high-frequency power supply terminal and the ultra-high-frequency power supply terminal.

11. The radio frequency module according to claim 1, characterized in that, The radio frequency module also includes: The radio frequency transceiver is connected to each of the power supply modules and the switching module respectively, and is used to control the power supply voltage output by each power supply module and the switching state of the switching module according to the target dual connection mode, so as to provide an adapted power supply voltage for the two power amplifier modules in the target dual connection mode.

12. The radio frequency module according to claim 1, characterized in that, At least two of the at least three power amplification modules are integrated into the same power amplification module.

13. The radio frequency module according to claim 1, characterized in that, When the RF module is in single-connection mode, the switching module time-division multiplexes the power supply path between any of the power amplifier modules and one of the power supply modules.

14. An electronic device, characterized in that, Includes the radio frequency module as described in any one of claims 1-13.

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