N-type TOPCon battery PSG removing machine capable of automatically adjusting oxide layer difference value
By adding an oxide layer testing device before and after PSG removal, the oxide layer difference can be monitored and adjusted in real time, solving the problem of inconsistent oxide layer caused by the inability of traditional equipment to monitor, and improving the yield and efficiency of solar cells.
Patent Information
- Authority / Receiving Office
- CN · China
- Patent Type
- Applications(China)
- Current Assignee / Owner
- Filing Date
- 2025-11-26
- Publication Date
- 2026-03-27
AI Technical Summary
Traditional PSG equipment cannot monitor the oxide layer on the silicon wafer surface in real time, resulting in inconsistent oxide layer cleaning effects, such as over-cleaning or under-cleaning, which affects the yield and efficiency of the finished cells.
An oxide layer testing device is added before and after PSG removal. The process and equipment are adjusted by the difference in oxide layers before and after the removal, so as to achieve real-time monitoring and adjustment.
It effectively reduces over-washing or under-washing, improves the EL darking and leakage of finished solar cells, and increases the yield and efficiency of solar cells.
Smart Images
Figure CN121751792A_ABST
Abstract
Description
Technical Field
[0001] This invention belongs to the field of TOPCon battery production technology, and in particular relates to a PSG removal machine for N-type TOPCon batteries that automatically adjusts the oxide layer difference. Background Technology
[0002] With the development of monocrystalline silicon cell technology, the market demands for cell yield and efficiency are constantly increasing. Process technology is continuously innovating, and N-type TOPCon cell technology has emerged. N-type TOPCon cells have advantages such as high conversion efficiency, resistance to degradation, low temperature coefficient, and high bifaciality, which are beneficial for improving photovoltaic power generation gain, reducing power generation costs, and extending the power generation life. In practical work, we have found that traditional operating methods suffer from different oxide layer cleaning effects on silicon wafers due to variations in the structure of each PSG machine and the concentration of the process solution. Furthermore, traditional equipment cannot monitor the oxide layer on the silicon wafer surface in real time during production, resulting in differences between the oxide value at the time of wafer feeding and after PSG removal. This leads to over-cleaning or under-cleaning in subsequent cleaning processes. Moreover, over-etching and under-etching are prone to occur after RCA (Rich Coding Process), causing dark EL (Electro-Electrode) cells and leakage in the finished cells, affecting the yield and efficiency of the finished product. Summary of the Invention
[0003] The purpose of this invention is to provide an automatic adjustment machine for removing PSG from N-type TOPCon batteries by adding an oxide layer testing device before and after PSG removal. Based on the difference between the oxide layers before and after removal, the machine can be adjusted and the equipment maintained and improved in a timely manner if it deviates from the center value. This effectively reduces over-washing or under-washing, improves the EL darking and leakage of finished battery cells, and improves the yield, efficiency and other performance of battery cells, thereby solving the above-mentioned technical problems.
[0004] The technical solution of the present invention to solve the above-mentioned technical problems is as follows: An automatic adjustment of the oxide layer difference value of N-type TOPCon battery PSG removal machine, including a PSG removal machine body (1A): a feeding device and a discharging device are respectively provided on both sides of the PSG removal machine body (1A). The discharge end of the feeding device and the inlet end of the discharging device are respectively provided with an oxide layer testing device one and an oxide layer testing device two. The PSG removal machine body (A) includes a machine shell placed on the ground. One side of the inner cavity of the machine shell is connected to an HF mixture injection channel. One side of the inner cavity of the HF mixture injection channel is provided with an acid tank exhaust device. One side of the inner cavity of the machine shell is provided with a drying tank exhaust device. One side of the inner cavity of the machine shell is provided with a water tank exhaust device located between the acid tank exhaust device and the drying tank exhaust device. One side of the inner cavity of the machine shell is connected to a pure water injection channel. One side of the inner cavity of the machine shell is connected to a compressed air inflation pipe located above the pure water injection channel. One side of the machine shell is provided with a power supply device adapted to the machine shell.
[0005] Preferably, an exhaust duct is provided through the top of the machine casing, the exhaust duct is 2.23m above the ground, the power supply device is 1.85m above the ground, and the HF mixture injection duct, pure water injection duct and compressed air inflation pipe are all 2.15m above the ground.
[0006] Preferably, one side of the machine casing is connected to a first leakage discharge pipe and a second leakage discharge pipe, the first and second leakage discharge pipes being 0.06m above the ground. The other side of the machine casing is connected to an HF mixture discharge pipe and a wastewater discharge pipe located between the first and second leakage discharge pipes, the HF mixture discharge pipe and the wastewater discharge pipe being 0.3m above the ground.
[0007] Preferably, an ADD waste liquid discharge device is provided on one side of the machine casing, the ADD waste liquid discharge device is 0.3m above the ground, and the ADD waste liquid discharge device is connected to the machine casing.
[0008] Preferably, multiple alarms are fixedly installed on one side of the top of both the feeding device and the unloading device.
[0009] Preferably, a silicon wafer flipping device is provided on one side of the PSG removal machine body 1A, and the silicon wafer flipping device is located between the PSG removal machine body 1A and the feeding device.
[0010] Preferably, the silicon wafer flipping device includes a mounting frame laid on the ground, a stepper motor is mounted on one side of the mounting frame, and a rotating rod is fixedly mounted on the output shaft of the stepper motor, the rotating rod being rotatably mounted on the mounting frame.
[0011] Preferably, the surface of the rotating rod is fitted with multiple sets of flip trays, each set of flip trays consists of two trays, and each flip tray has multiple slots on its surface.
[0012] Preferably, the feeding device includes a housing, the inner cavity of the housing is provided with a conveying channel, both sides of the conveying channel are provided with side conveying channels fixedly installed on the inner wall of the housing, both sides of the inner cavity of the housing are fixedly installed with conveying devices, the conveying device includes a fixed frame fixedly installed on the inner wall of the housing, a second stepper motor is fixedly installed on the top of the fixed frame, a conveyor belt is rotatably installed on the inner side of the fixed frame, and the second stepper motor is connected to the conveyor belt for transmission.
[0013] A method for automatically adjusting the oxide layer difference, the adjustment steps are as follows: S. The silicon wafers for batteries are fed into the unloading device. The silicon wafers will first pass through the oxide layer testing device to monitor the oxidation value for the first time and record the oxidation value data before being sent into the unloading device. S. The silicon wafer is fed into the PSG removal machine body by the feeding device for PSG removal processing. A mixture of HNO3 and HF is sprayed into the PSG removal machine body. This mixture can remove the N-type silicon at the edge, making the upper and lower surfaces of the silicon wafer insulated from each other. Then, HF is used to remove the PSG on the surface. S. When the feeding device starts working, the conveying channel starts working to transport the silicon wafers forward. It should be noted that the conveying channel adopts a chain double-channel conveying structure, which can transport a large number of silicon wafers at the same time for PSG removal processing, thereby improving the speed and efficiency of PSG removal processing and improving the production efficiency of battery silicon wafers. S. The side conveying channel and conveying device can also convey silicon wafers from the side into the conveying channel. It should be noted that the side conveying channel and the conveying device have the same structural design. When working, the stepper motor is started to drive the conveyor belt to rotate on the fixed frame to transport silicon wafers. After the silicon wafers are transported by the conveying device and the side conveying channel, the thickness can also be detected to improve the inspection data of silicon wafer processing, so that users can adjust the equipment at any time, reject defective products, and reduce the defect rate. S. After completing the PSG removal process inside the PSG removal machine, it is sent out and simultaneously flipped under the operation of the silicon wafer flipping device. The silicon wafer flipping device works as follows: S. Start the stepper motor to drive the rotating rod to rotate. The rotating rod drives all the flipping trays to rotate. The silicon wafers are sent out from the PSG machine body and inserted into the corresponding slots. Then, after the stepper motor and the rotating rod rotate 180 degrees, the wafers are flipped and sent to the feeding device to be sent out. It should be noted that the feeding device and the unloading device have the same structural design, except that the feeding device is located at the discharge end for discharging, and the unloading device is located at the feed end for feeding. S. Cleaning the silicon wafers: After the silicon wafers are fed out by the feeding device, they pass through the oxide layer testing device 2 again to detect the oxide value and upload the data. Then, the oxide value data measured at the feeding end is compared with the data and the difference before and after is calculated. Based on the difference in oxide layer before and after, the process adjustment and equipment maintenance of the machine that deviates from the center value can be carried out in a timely manner, thereby reducing the phenomenon of over-cleaning or under-cleaning, improving the dark film and leakage of the finished solar cell EL, and improving the yield, efficiency and other performance of the solar cell.
[0014] The beneficial effects of this invention are: by adding an oxide layer testing device before and after removing PSG, the difference between the oxide layers before and after can be used to make timely process adjustments and equipment maintenance improvements for machines that deviate from the center value, effectively reducing over-washing or under-washing phenomena, improving the EL dark film and leakage of finished solar cells, and improving the yield, efficiency and other performance of solar cells.
[0015] The present invention uses a silicon wafer flipping device to start a stepper motor to drive a rotating rod to rotate. The rotating rod drives all the flipping trays to rotate. After the silicon wafer is sent out from the PSG machine body (A), it will be inserted into the corresponding slot. Then, after the stepper motor and the rotating rod rotate 180 degrees, the flipping is completed and the wafer is sent to the feeding device for delivery.
[0016] This invention utilizes a feeding device with a chain-type double-channel conveyor structure, comprising twelve conveying channels arranged in groups of six. This allows for the simultaneous transport of large quantities of silicon wafers for PSG removal processing, improving the speed and efficiency of PSG removal and enhancing the overall production efficiency of battery silicon wafers. During operation, all conveying channels are activated to feed and transport the silicon wafers. It should be noted that the feeding device is identical to the unloading device and works in conjunction with it. The side conveying channel and the conveying device can transport silicon wafers with thickness checked from the side to the conveying channel, and then together they are fed into the next process. The side conveying channel and the conveying device operate in the same manner. During operation, stepper motor two (C) drives the conveyor belt (B) to rotate and transport the silicon wafers on the fixed frame (A). After being transported by the conveying device and the side conveying channel, the silicon wafers can also undergo thickness detection to improve the inspection data of silicon wafer processing, allowing users to adjust the equipment at any time, eliminate defective products, and reduce the defect rate. Attached Figure Description
[0017] The advantages of the present invention, both above and / or other aspects, will become clearer and more readily understood through the following detailed description taken in conjunction with the accompanying drawings, which are merely illustrative and do not limit the invention, wherein: Figure 1 This is a schematic diagram of the overall structure of one embodiment of the present invention; Figure 2This is a partial three-dimensional structural diagram of a feeding device according to an embodiment of the present invention; Figure 3 This is a perspective view of a silicon wafer flipping device according to an embodiment of the present invention; Figure 4 This is a top view of the main body of the PSG removal unit according to an embodiment of the present invention; Figure 5 This is a side view of the main body of the PSG removal machine according to an embodiment of the present invention; Figure 6 This is a comparative schematic diagram of the layout of an oxide layer testing device according to an embodiment of the present invention.
[0018] In the attached diagram, the components represented by each number are as follows: 1A. PSG machine main body, 1. HF mixture injection channel, 2. Pure water injection channel, 3. Compressed air charging pipe, 4. Leakage discharge pipe one, 5. HF mixture discharge pipe, 6. Wastewater discharge pipe, 7. Exhaust duct, 8. Power supply device, 9. Leakage discharge pipe two, 10. ADD waste liquid discharge device, 11. Machine casing, 12. Drying tank exhaust device, 13. Water tank exhaust device, 14. Acid tank exhaust device, 15. Feeding 16. Feeding device; 17. Oxide layer testing device one; 18. Oxide layer testing device two; 19. Silicon wafer flipping device; 20. Alarm; 191. Mounting bracket; 192. Stepper motor one; 193. Rotating rod; 194. Tilting tray; 195. Slot; 161. Conveying channel; 162. Side conveying channel; 163. Conveying device; 163A. Fixing frame; 163B. Conveyor belt; 163C. Stepper motor two. Detailed Implementation
[0019] In the following description, an embodiment of the present invention for automatically adjusting the oxide layer difference of an N-type TOPCon battery to a PSG machine will be described with reference to the accompanying drawings.
[0020] The embodiments described herein are specific implementations of the present invention, used to illustrate the concept of the invention, and are illustrative and exemplary, and should not be construed as limiting the implementation or scope of the invention. In addition to the embodiments described herein, those skilled in the art can employ other obvious technical solutions based on the content disclosed in the claims and specification of this application. These technical solutions include those that make any obvious substitutions and modifications to the embodiments described herein.
[0021] Appendix to this instruction manual Figure 1-6The figures are schematic diagrams to illustrate the concept of the invention, showing the shapes of the various parts and their interrelationships. Please note that, to clearly demonstrate the structure of the components in the embodiments of the invention, the figures are not drawn to the same scale. The same reference numerals are used to denote the same parts.
[0022] Example 1: An automatic adjustment PSG removal machine for N-type TOPCon batteries, comprising a PSG removal machine body 1A: A feeding device 15 and a discharging device 16 are respectively arranged on both sides of the PSG removal machine body 1A. An oxide layer testing device 17 and an oxide layer testing device 2 18 are respectively arranged at the discharge end of the feeding device 15 and the inlet end of the discharging device 16. The PSG removal machine body 1A includes a machine housing 11 placed on the ground. One side of the inner cavity of the machine housing 11 is connected to an HF mixture injection channel 1. An acid tank exhaust device 14 is provided on one side of the inner cavity of the liquid injection channel 1. A drying tank exhaust device 12 is provided on one side of the inner cavity of the machine housing 11. A water tank exhaust device 13 is provided on one side of the inner cavity of the machine housing 11, located between the acid tank exhaust device 14 and the drying tank exhaust device 12. A pure water injection channel 2 is connected to one side of the inner cavity of the machine housing 11. A compressed air inflation pipe 3 located above the pure water injection channel 2 is connected to one side of the inner cavity of the machine housing 11. A power supply device 8 adapted to the machine housing 11 is provided on one side of the machine housing 11.
[0023] It should be noted that the drying tank exhaust device 12, water tank exhaust device 13, and acid tank exhaust device 14 are all used for exhaust. The difference is that the acid tank exhaust device 14 uses acid tank exhaust, which can promptly remove acid mist, making the workshop air fresher, ensuring the health of the staff, reducing the risk of equipment corrosion, extending the service life of the equipment, and saving costs. The water tank exhaust device 13 can limit paint mist, separate excess paint from the air, meet environmental emission requirements, improve the operating environment, reduce humidity, reduce the concentration of corrosive gases, protect equipment and buildings, and extend service life. The drying tank exhaust device 12 can form a stable airflow circulation. Taking the new uniform air drying tank for photovoltaic silicon wafers as an example, after the heating fan is started, hot air enters the lower end of the tank cavity through the blower pipe and hot air pipe, forming a hot air flow field from bottom to top, drying the photovoltaic silicon wafers. The exhaust device can also promptly remove humid air, so that the humidity of the tank is reduced and the dryness is improved in the long-term internal circulation.
[0024] The specific usage process is as follows: The silicon wafer is fed into the feeding device 16. The wafer first undergoes oxidation value monitoring and data recording via the oxide layer testing device 17. Then, it is fed into the feeding device 16 and into the PSG removal machine body 1A for PSG removal processing. A mixture of HNO3 and HF is sprayed into the PSG removal machine body 1A. This mixture removes the N-type silicon at the edges, insulating the upper and lower surfaces of the wafer. HF is then used to remove PSG from the surface. After completing the PSG removal process in the PSG removal machine body 1A, the wafer is ejected and simultaneously flipped by the wafer flipping device 19. The wafer flipping device 19 works as follows: Stepper motor 192 drives rotating rod 193, which in turn rotates all the flipping trays 194. After being ejected from the PSG removal machine body 1A, the wafer is inserted into the corresponding slot 195. Then, the wafer is flipped by stepper motor 192 and rotating rod 193... After being flipped 180 degrees, the wafer is completed and sent to the feeding device 15 for delivery. It should be noted that the feeding device 15 and the unloading device 16 have the same structural design, except that the feeding device 15 is located at the discharge end for unloading, and the unloading device 16 is located at the feed end for feeding. After the silicon wafer is sent out by the feeding device 15, it passes through the oxide layer testing device 18 again to detect the oxidation value and uploads the data. Then, it is compared with the oxidation value data measured at the feed end and the difference before and after is calculated. Based on the difference in the oxide layer before and after, the process adjustment and equipment maintenance of the machine that deviates from the center value can be carried out in time, thereby reducing over-washing or under-washing, improving the dark film and leakage of the finished solar cell EL, and improving the yield, efficiency and other performance of the solar cell. Before operation, the corresponding valves should be opened. For example, the HF mixture injection channel 1 is opened for HF mixture injection, and the pure water injection channel 2 is opened for pure water injection. Other corresponding valves are opened and used according to different time periods.
[0025] The top of the machine casing 11 is provided with an exhaust duct 7, which is 2.23m above the ground. The power supply device 8 is 1.85m above the ground. The HF mixture injection channel 1, the pure water injection channel 2, and the compressed air inflation pipe 3 are all 2.15m above the ground.
[0026] Specifically, HF mixture injection channel 1 is for users to replenish HF mixture. HF mixture is injected through HF mixture injection channel 1 to ensure the normal operation of the silicon wafer PSG process. Pure water injection channel 2 is used to supply pure water to meet the processing requirements of silicon wafers. Compressed air charging pipe 3 is used to supply compressed air. Exhaust channel 7 is used for exhaust. Power supply device 8 is used to supply power to the equipment.
[0027] One side of the machine casing 11 is connected to a first leakage discharge pipe 4 and a second leakage discharge pipe 9. The first leakage discharge pipe 4 and the second leakage discharge pipe 9 are 0.06m above the ground. One side of the machine casing 11 is also connected to an HF mixture discharge pipe 5 and a wastewater discharge pipe 6 located between the first leakage discharge pipe 4 and the second leakage discharge pipe 9. The HF mixture discharge pipe 5 and the wastewater discharge pipe 6 are both 0.3m above the ground. An ADD waste liquid discharge device 10 is installed on one side of the machine casing 11. The ADD waste liquid discharge device 10 is 0.3m above the ground and is connected to the machine casing 11.
[0028] Specifically, leakage discharge pipe 1 (4) and leakage discharge pipe 2 (9) are used to discharge leakage. During operation, leakage inside the machine can be eliminated in a timely manner to avoid corrosion and extend the service life of the equipment. HF mixture discharge pipe 5 is used to drain HF mixture. The HF mixture after rinsing the silicon wafers will be discharged and collected for treatment. Wastewater discharge pipe 6 is used to discharge wastewater. ADD waste liquid discharge device 10 is used to discharge ADD waste liquid.
[0029] Multiple alarms 20 are fixedly installed on one side of the top of both the feeding device 15 and the unloading device 16.
[0030] Specifically, the alarm 20 is installed on the feeding device 15 and the unloading device 16. In conjunction with the sensors, it monitors and issues an alarm to notify the user, giving the user sufficient time to deal with emergencies and allowing the user to adjust the equipment before the situation escalates, ensuring that the production of battery silicon wafers can be quickly restored.
[0031] A silicon wafer flipping device 19 is provided on one side of the PSG removal machine body 1A. The silicon wafer flipping device 19 is located between the PSG removal machine body 1A and the feeding device 15. The silicon wafer flipping device 19 includes a mounting frame 191 laid on the ground. A stepper motor 192 is installed on one side of the mounting frame 191. A rotating rod 193 is fixedly installed on the output shaft of the stepper motor 192. The rotating rod 193 is rotatably mounted on the mounting frame 191. Multiple sets of flipping trays 194 are sleeved on the surface of the rotating rod 193. Each set of flipping trays 194 has two trays. Multiple slots 195 are opened on the surface of each flipping tray 194.
[0032] Specifically, the silicon wafer flipping device 19 is configured such that the stepper motor 192 is started to drive the rotating rod 193 to rotate, and the rotating rod 193 drives all the flipping trays 194 to rotate. After the silicon wafer is sent out from the PSG machine body 1A, it will be inserted into the corresponding slot 195. Then, after the stepper motor 192 and the rotating rod 193 rotate 180 degrees, the flipping is completed, and it is sent to the feeding device 15 for delivery.
[0033] The feeding device 16 includes a housing, and the inner cavity of the housing is provided with a conveying channel 161. Both sides of the conveying channel 161 are provided with side conveying channels 162 fixedly installed on the inner wall of the housing. Both sides of the inner cavity of the housing are fixedly installed with conveying devices 163. The conveying device 163 includes a fixed frame 163A fixedly installed on the inner wall of the housing. A stepper motor 163C is fixedly installed on the top of the fixed frame 163A. A conveyor belt 163B is rotatably installed on the inner side of the fixed frame 163A. The stepper motor 163C is connected to the conveyor belt 163B in a driving connection.
[0034] Specifically, the unloading device 16 adopts a chain-type double 6-channel conveyor structure, meaning it simultaneously has twelve conveyor channels 161. Each group of six conveyor channels 161 can simultaneously transport large quantities of silicon wafers for PSG removal processing, improving the speed and efficiency of PSG removal processing and increasing the production efficiency of battery silicon wafers. During operation, all conveyor channels 161 are activated to feed and transport the silicon wafers. It should be noted that the loading device 15 is the same as the unloading device 16 and works in conjunction with it. The side conveying channel 162 and the conveying device 163 can send the silicon wafers with the thickness checked from the side to the conveying channel 161, and then send them together to the next process. The side conveying channel 162 and the conveying device 163 work in the same way. When working, the stepper motor 163C drives the conveyor belt 163B to rotate on the fixed frame 163A to transfer the silicon wafers. After the silicon wafers are conveyed by the conveying device 163 and the side conveying channel 162, the thickness can be checked to improve the inspection data of silicon wafer processing, so that users can adjust the equipment at any time, reject defective products, and reduce the defect rate.
[0035] A method for automatically adjusting the oxide layer difference, the adjustment steps are as follows: S1. The silicon wafer for the battery is fed into the unloading device 16. The silicon wafer will first pass through the oxide layer testing device 17 for the first oxide value monitoring and record the oxide value data, and then be sent into the unloading device 16. S2. The silicon wafer is fed into the PSG removal machine body 1A by the feeding device 16 for PSG removal processing. A mixture of HNO3 and HF is sprayed into the PSG removal machine body 1A. This mixture can remove the N-type silicon at the edge, making the upper and lower surfaces of the silicon wafer insulated from each other. Then, HF is used to remove the PSG on the surface. S2.1 When the feeding device 16 starts working, the conveying channel 161 starts working to convey the silicon wafers forward. It should be noted that the conveying channel 161 adopts a chain-type double 6-channel conveying structure, which can simultaneously convey a large number of silicon wafers for PSG removal processing, improve the speed and efficiency of PSG removal processing of silicon wafers, and improve the production efficiency of battery silicon wafers. S2.2, the side conveying channel 162 and the conveying device 163 can also convey silicon wafers from the side to the conveying channel 161. It should be noted that the side conveying channel 162 and the conveying device 163 have the same structural design. When working, the stepper motor 163C is started to drive the conveyor belt 163B to rotate on the fixed frame 163A to transport silicon wafers. After the silicon wafers are transported by the conveying device 163 and the side conveying channel 162, the thickness can be detected to improve the detection data of silicon wafer processing, so that users can adjust the equipment at any time, reject defective products, and reduce the defect rate. S3. After completing the PSG removal process within the PSG removal machine body 1A, the wafer is sent out and simultaneously flipped under the operation of the silicon wafer flipping device 19. The silicon wafer flipping device 19 operates as follows: S3.1 Start stepper motor 192 to drive rotating rod 193 to rotate. Rotating rod 193 drives all flipping trays 194 to rotate. The silicon wafer is sent out from the PSG machine body 1A and inserted into the corresponding slot 195. Then, after stepper motor 192 and rotating rod 193 rotate 180 degrees, the wafer is flipped and sent to the feeding device 15 to be sent out. It should be noted that the feeding device 15 and the unloading device 16 have the same structural design, except that the feeding device 15 is arranged at the discharge end for discharging, and the unloading device 16 is arranged at the feed end for feeding. S4. Cleaning the silicon wafer: After the silicon wafer is sent out by the feeding device 15, it passes through the oxide layer testing device 18 again to detect the oxide value and upload the data. Then, it is compared with the oxide value data measured at the feeding end and the difference before and after is calculated. Based on the difference of the oxide layer before and after, the process adjustment and equipment maintenance of the machine that deviates from the center value can be carried out in time, thereby reducing the phenomenon of over-cleaning or under-cleaning, improving the dark film and leakage of the finished solar cell EL, and improving the yield, efficiency and other performance of the solar cell.
[0036] Example 2 The feeding device 16 includes a housing, and the inner cavity of the housing is provided with a conveying channel 161. Both sides of the conveying channel 161 are provided with side conveying channels 162 fixedly installed on the inner wall of the housing. Both sides of the inner cavity of the housing are fixedly installed with conveying devices 163. The conveying device 163 includes a fixed frame 163A fixedly installed on the inner wall of the housing. A stepper motor 163C is fixedly installed on the top of the fixed frame 163A. A conveyor belt 163B is rotatably installed on the inner side of the fixed frame 163A. The stepper motor 163C is connected to the conveyor belt 163B in a driving connection.
[0037] The specific working process is as follows: The unloading device 16 adopts a chain-type double 6-channel conveyor structure, that is, it is equipped with twelve conveyor channels 161 at the same time. Every six conveyor channels 161 form a group of conveyor channels, which can simultaneously convey a large number of silicon wafers for PSG removal processing, thereby improving the speed and efficiency of PSG removal processing and increasing the production efficiency of battery silicon wafers. During operation, all conveyor channels 161 are activated to realize the feeding and conveying of silicon wafers. It should be noted that the loading device 15 is the same as the unloading device 16 and is used in conjunction with the unloading device 16. Among them, the side conveyor... Channel 162 and conveying device 163 can send silicon wafers with inspected thickness from the side to conveying channel 161, and then send them together to the next process. The side conveying channel 162 works in the same way as the conveying device 163. During operation, stepper motor 163C drives conveyor belt 163B to rotate on the fixed frame 163A to transport silicon wafers. After being transported by conveying device 163 and side conveying channel 162, the silicon wafers can also be inspected for thickness to improve the inspection data of silicon wafer processing, so that users can adjust the equipment at any time, reject defective products, and reduce the defect rate.
[0038] In summary, this automatic oxide layer difference adjustment N-type TOPCon battery PSG removal machine adds an oxide layer testing device before and after PSG removal. Based on the difference between the oxide layers before and after removal, it can promptly adjust the process and improve the equipment for deviations from the center value, effectively reducing over-washing or under-washing phenomena, improving the EL darking and leakage of finished battery cells, and improving the yield, efficiency and other performance of battery cells.
[0039] The technical features disclosed above are not limited to the combinations of the disclosed features with other features. Those skilled in the art can also make other combinations of the technical features according to the purpose of the invention to achieve the purpose of the invention.
Claims
1. A PSG removal machine for N-type TOPCon batteries that automatically adjusts oxide layer difference, characterized in that, The PSG removal machine body (1A) includes a feeding device (15) and a discharging device (16) on both sides of the PSG removal machine body (1A). The discharge end of the feeding device (15) and the inlet end of the discharging device (16) are respectively equipped with an oxide layer testing device one (17) and an oxide layer testing device two (18). The PSG removal machine body (1A) includes a machine shell (11) placed on the ground. One side of the inner cavity of the machine shell (11) is connected to an HF mixture injection channel (1). One side of the inner cavity of the HF mixture injection channel (1) is equipped with an acid tank exhaust fan. The device (14) has a drying tank exhaust device (12) on one side of the inner cavity of the machine housing (11), a water tank exhaust device (13) located between the acid tank exhaust device (14) and the drying tank exhaust device (12) on one side of the inner cavity of the machine housing (11), a pure water injection channel (2) on one side of the inner cavity of the machine housing (11), a compressed air inflation pipe (3) located above the pure water injection channel (2) on one side of the inner cavity of the machine housing (11), and a power supply device (8) adapted to the machine housing (11) on one side of the machine housing (11).
2. The PSG removal machine for N-type TOPCon batteries that automatically adjusts the oxide layer difference according to claim 1, characterized in that, The top of the machine casing (11) is provided with an exhaust duct (7), which is 2.23m above the ground. The power supply device (8) is 1.85m above the ground. The HF mixture injection channel (1), the pure water injection channel (2) and the compressed air inflation pipe (3) are all 2.15m above the ground.
3. The PSG removal machine for N-type TOPCon batteries that automatically adjusts the oxide layer difference according to claim 2, characterized in that, One side of the machine casing (11) is connected to a first leakage discharge pipe (4) and a second leakage discharge pipe (9). The first leakage discharge pipe (4) and the second leakage discharge pipe (9) are 0.06m above the ground. One side of the machine casing (11) is connected to an HF mixture discharge pipe (5) and a wastewater discharge pipe (6) located between the first leakage discharge pipe (4) and the second leakage discharge pipe (9). The HF mixture discharge pipe (5) and the wastewater discharge pipe (6) are both 0.3m above the ground.
4. The PSG removal machine for N-type TOPCon batteries with automatic adjustment of oxide layer difference as described in claim 3, characterized in that, An ADD waste liquid discharge device (10) is provided on one side of the machine casing (11). The ADD waste liquid discharge device (10) is 0.3m above the ground and is connected to the machine casing (11).
5. The PSG removal machine for N-type TOPCon batteries with automatic adjustment of oxide layer difference according to claim 4, characterized in that, Multiple alarms (20) are fixedly installed on one side of the top of the feeding device (15) and the unloading device (16).
6. The PSG removal machine for N-type TOPCon batteries with automatic adjustment of oxide layer difference as described in claim 5, characterized in that, A silicon wafer flipping device (19) is provided on one side of the PSG removal machine body (1A), and the silicon wafer flipping device (19) is located between the PSG removal machine body (1A) and the feeding device (15).
7. The PSG removal machine for N-type TOPCon batteries with automatic adjustment of oxide layer difference according to claim 6, characterized in that, The silicon wafer flipping device (19) includes a mounting frame (191) laid on the ground. A stepper motor (192) is mounted on one side of the mounting frame (191). A rotating rod (193) is fixedly mounted on the output shaft of the stepper motor (192). The rotating rod (193) is rotatably mounted on the mounting frame (191).
8. The PSG removal machine for N-type TOPCon batteries with automatic adjustment of oxide layer difference according to claim 7, characterized in that, The rotating rod (193) has multiple sets of flip trays (194) sleeved on its surface. Each set of flip trays (194) consists of two pieces, and each flip tray (194) has multiple slots (195) on its surface.
9. A PSG removal machine for N-type TOPCon batteries that automatically adjusts oxide layer difference according to claim 8, characterized in that, The feeding device (16) includes a housing, and the inner cavity of the housing is provided with a conveying channel (161). Both sides of the conveying channel (161) are provided with side conveying channels (162) fixedly installed on the inner wall of the housing. Both sides of the inner cavity of the housing are fixedly installed with conveying devices (163). The conveying device (163) includes a fixed frame (163A) fixedly installed on the inner wall of the housing. A stepper motor (163C) is fixedly installed on the top of the fixed frame (163A). A conveyor belt (163B) is rotatably installed on the inner side of the fixed frame (163A). The stepper motor (163C) is connected to the conveyor belt (163B) in a transmission connection.
10. A method for automatically adjusting oxide layer difference, applied to a PSG removal machine for N-type TOPCon batteries as described in claims 1-9, characterized in that... The adjustment steps are as follows: S1. The silicon wafer for the battery is fed into the unloading device (16). The silicon wafer will first pass through the oxide layer test device (17) for the first oxidation value monitoring and record the oxidation value data, and then be sent into the unloading device (16). S2. The silicon wafer is fed into the PSG removal machine body (1A) by the feeding device (16) for PSG removal processing. A mixture of HNO3 and HF is sprayed into the PSG removal machine body (1A). This mixture can remove the N-type silicon at the edge, making the upper and lower surfaces of the silicon wafer insulated from each other. Then, HF is used to remove the PSG on the surface. S2.1 When the feeding device (16) starts working, the conveying channel (161) starts working to convey the silicon wafer forward. It should be noted that the conveying channel (161) adopts a chain-type double 6-channel conveying structure, which can simultaneously convey a large number of silicon wafers for PSG removal processing, improve the speed and efficiency of PSG removal processing of silicon wafers, and improve the production efficiency of battery silicon wafers. S2.2, the side conveying channel (162) and the conveying device (163) can also convey silicon wafers from the side to the conveying channel (161). It should be noted that the side conveying channel (162) and the conveying device (163) have the same structural design. When working, the stepper motor (163C) is started to drive the conveyor belt (163B) to rotate on the fixed frame (163A) to transfer silicon wafers. After the silicon wafers are conveyed by the conveying device (163) and the side conveying channel (162), the thickness can be detected to improve the detection data of silicon wafer processing, so that users can adjust the equipment at any time, reject defective products, and reduce the defect rate. S3. After completing the PSG removal process in the main body (1A) of the PSG removal machine, it is sent out and simultaneously flipped under the operation of the silicon wafer flipping device (19). The silicon wafer flipping device (19) works as follows: S3.1 Start stepper motor 1 (192) to drive the rotating rod (193) to rotate. The rotating rod (193) drives all the flipping trays (194) to rotate. The silicon wafer is sent out from the PSG machine body (1A) and inserted into the corresponding slot (195). Then, after the stepper motor 1 (192) and the rotating rod (193) are flipped 180 degrees, the wafer is flipped and sent to the feeding device (15) to be sent out. It should be noted that the structural design of the feeding device (15) and the unloading device (16) is the same, except that the feeding device (15) is arranged at the discharge end for the discharge work, and the unloading device (16) is arranged at the feed end for the feed work. S4. After the silicon wafer is fed out by the feeding device (15), it passes through the oxide layer testing device two (18) again to detect the oxidation value and upload the data. Then, it is compared with the oxidation value data measured at the feeding end and the difference before and after is calculated. Based on the difference between the oxide layers before and after, the process adjustment and equipment maintenance improvement of the machine that deviates from the center value can be carried out in a timely manner, thereby reducing the phenomenon of over-washing or under-washing, improving the EL dark film and leakage of the finished battery cell, and improving the battery cell yield, efficiency and other performance.