Electro-kinetic force braking in lithographic apparatus

Abstract

A brake system may include a moving frame, one or more balancing masses, one or more actuators, and one or more mechanical buffers. The moving frame can move according to preset kinetic energy. One or more balancing masses may absorb reaction forces applied by the moving frame. One or more actuators may move the moving frame and stop movement of the moving frame by braking to prevent collision damage in error scenarios. The one or more actuators may be electrically shorted to generate an electrically powered braking force opposite the direction of movement of the moving frame to reduce the kinetic energy of the moving frame and reduce the braking distance of the moving frame. The one or more mechanical dampers may absorb a margin of kinetic energy of the moving frame remaining after the one or more actuators complete their braking actions.

Description

Cross-references to related applications

[0001] This application claims priority to U.S. Application 63 / 580,237, filed September 1, 2023, the entire contents of which are incorporated herein by reference. Technical Field

[0002] This disclosure relates to an actuation stage, such as a stage for supporting photomasks used in lithography apparatuses and systems. Background Technology

[0003] A photolithography apparatus is a machine configured to apply a desired pattern onto a substrate. Photolithography apparatuses can be used, for example, in the manufacture of integrated circuits (ICs). For example, a photolithography apparatus can project a pattern from a patterning device (e.g., a mask, a photomask) onto a layer of radiation-sensitive material (photoresist, or simply "resist") disposed on a substrate.

[0004] To project a pattern onto a substrate, a photolithography apparatus can use electromagnetic radiation. The wavelength of this radiation determines the minimum size of the feature that can be formed on the substrate. Compared to photolithography apparatuses using radiation with a wavelength of, for example, 193 nm, photolithography apparatuses using extreme ultraviolet (EUV) radiation in the range of 4 nm to 20 nm, such as 6.7 nm or 13.5 nm, can be used to form smaller features on the substrate.

[0005] Within a given timeframe, a lithography system can only output a limited number of fabrication units. Rapid scanning of the wafer stage and mask stage can increase manufacturing speed. However, efforts to increase the speed of the moving stage can increase its braking distance. Such increases in braking distance can cause collisions, resulting in mechanical damage to existing lithography systems. For example, current mechanical buffers may not be able to independently absorb the kinetic energy of the moving stage, thus failing to prevent damage to other components within the limited volume of the existing lithography system. Summary of the Invention

[0006] Therefore, it is desirable to improve braking capabilities to be compatible with the increased speed and throughput of lithography manufacturing. According to the aspects described herein, electromagnetic actuators for wafer and mask stages can provide electric braking forces.

[0007] In some aspects, a photolithography apparatus may include an illumination system, a patterning system, a projection system, and a mask stage. The illumination system may be configured to generate a radiation beam. The patterning system may include a mask and may be configured to apply a pattern to the beam. The projection system may be configured to project the patterned beam onto a substrate. The mask stage may include a moving frame, one or more counterweights, one or more actuators, and one or more mechanical buffers. The moving frame may move with a predetermined amount of kinetic energy. The one or more counterweights may absorb the reaction force exerted by the moving frame. The one or more actuators may move the moving frame and may stop the movement of the moving frame by braking in response to an error scenario to prevent collision damage. The one or more actuators may be electrically short-circuited to generate an electric braking force opposite to the direction of movement of the moving frame, thereby reducing the kinetic energy of the moving frame and reducing the braking distance of the moving frame. The one or more mechanical buffers may absorb any remaining kinetic energy of the moving frame after the one or more actuators have completed their braking actions.

[0008] In some aspects, a braking system may include a moving frame, one or more counterweights, one or more actuators, and one or more mechanical dampers. The moving frame may move with a predetermined amount of kinetic energy. The one or more counterweights may absorb the reaction force exerted by the moving frame. The one or more actuators may move the moving frame and may stop the movement of the moving frame by braking in response to an erroneous scenario to prevent collision damage. The one or more actuators may be electrically short-circuited to generate an electric braking force opposite to the direction of movement of the moving frame, thereby reducing the kinetic energy of the moving frame and reducing the braking distance of the moving frame. The one or more mechanical dampers may absorb any remaining kinetic energy of the moving frame after the one or more actuators have completed their braking actions.

[0009] In some aspects, a braking method may include applying a current to one or more actuator coils to interact with a magnetic field from one or more magnets adjacent to the one or more actuator coils. The braking method may also include generating a force to move a moving frame in a lithography apparatus in a first direction. The braking method may further include short-circuiting one or more actuator coils during movement of the moving frame in response to an error scenario to prevent collision damage. The braking method may also include inducing a current in one or more actuator coils by the magnetic field from the one or more magnets. The braking method may further include generating a magnetic field in one or more actuator coils opposite to the magnetic field from the one or more magnets to generate an electric braking force in a second direction opposite to the first direction of movement of the moving frame. The braking method may also include reducing the speed of the moving frame before it impacts one or more mechanical buffers.

[0010] Further features of various aspects of this disclosure are described in detail below with reference to the accompanying drawings. It should be noted that this disclosure is not limited to the specific aspects described herein. Such aspects are given herein for illustrative purposes only. Other aspects will be apparent to those skilled in the art based on the teachings contained herein. Attached Figure Description

[0011] The accompanying drawings, which are incorporated herein and form part of the specification, illustrate the present disclosure and, together with the specification, further serve to explain the principles of the disclosure and enable those skilled in the art (one or more) to make and use the aspects described herein.

[0012] Figure 1A A reflective lithography apparatus based on some aspects is shown.

[0013] Figure 1B A transmission lithography apparatus based on some aspects is shown.

[0014] Figure 1C The photolithography unit is shown according to some aspects.

[0015] Figure 2 and Figure 3 The mask platform is shown according to some aspects.

[0016] Figure 4 A mask exchange device is shown based on some aspects.

[0017] Figure 5 The actuator is shown according to some aspects.

[0018] Figure 6A and Figure 6B An actuator device based on some aspects is shown.

[0019] Figure 7A and Figure 7B A mechanical buffer is shown based on some aspects.

[0020] Figure 8 A flowchart of a braking method based on some aspects is shown.

[0021] The features of this disclosure will become more apparent from the specific embodiments set forth below, taken in conjunction with the accompanying drawings, in which the same reference numerals identify corresponding elements. In the drawings, the same reference numerals generally indicate the same, functionally similar, and / or structurally similar elements. Additionally, generally, the leftmost number(s) of the reference numeral(s) identifies the drawing in which that reference numeral first appears. Unless otherwise stated, the drawings provided throughout this disclosure should not be construed as being drawn to scale. Detailed Implementation

[0022] The aspects described herein, as well as the terms "one aspect," "an aspect," "an exemplary aspect," "an example aspect," etc., used in the specification, indicate that the described aspect may include a specific feature, structure, or characteristic, but not every aspect must include a specific feature, structure, or characteristic. Furthermore, such phrases do not necessarily refer to the same aspect. Moreover, when a specific feature, structure, or characteristic is described in conjunction with an aspect, it should be understood that, whether explicitly described or not, implementing such a feature, structure, or characteristic in conjunction with other aspects is within the knowledge of those skilled in the art.

[0023] For ease of description, this document uses spatially related terms such as “beneath,” “below,” “lower,” “above,” “on,” “upper,” etc., to describe the relationship between one element or feature shown in the figures and another element(s) or feature(s). In addition to the orientations depicted in the figures, spatially relative terms are intended to cover different orientations of the device in use or operation. The device may be oriented in other ways (rotated 90 degrees or other orientations), and the spatially relative descriptive terms used herein should be interpreted accordingly.

[0024] The terms “about,” “approximately,” etc., may be used herein to indicate the value of a given quantity that may vary based on a particular technique. Based on a particular technique, the terms “about,” “approximately,” etc., may indicate the value of a given quantity that varies, for example, from 10% to 30% of that value (e.g., 10%, 20%, or 30% of that value).

[0025] Various aspects of this disclosure may be implemented in hardware, firmware, software, or any combination thereof. Various aspects of this disclosure may also be implemented as instructions stored on a computer-readable medium that can be read and executed by one or more processors. A machine-readable medium may include any mechanism for storing or transmitting information in a machine-readable form (e.g., a computing device). For example, a machine-readable medium may include read-only memory (ROM); random access memory (RAM); disk storage media; optical storage media; flash memory devices; electrical, optical, acoustic, or other forms of propagation signals (e.g., carrier waves, infrared signals, digital signals, etc.), and others. Furthermore, firmware, software, routines, and / or instructions may be described herein as performing certain actions. However, it should be understood that these descriptions are merely for convenience, and such actions are generated by a computing device, processor, controller, or other device that executes the firmware, software, routines, instructions, etc. The term "machine-readable medium" may be used interchangeably with similar terms, such as "computer program product," "computer-readable medium," "non-transitory computer-readable medium," etc. The term “non-transitory” is used herein to characterize one or more forms of computer-readable media other than transient propagation signals.

[0026] However, it is helpful to introduce example environments in which the various aspects of this disclosure can be implemented before describing these aspects in more detail.

[0027] Example lithography system

[0028] Figure 1A and Figure 1BLithography apparatus 100 and 100', which can implement aspects of the present disclosure, are shown respectively. Lithography apparatus 100 and 100' each include: an irradiation system (irradiator) IL configured to modulate a radiation beam B (e.g., deep ultraviolet or extreme ultraviolet radiation); a support structure (e.g., a mask stage) MT configured to support a patterning device (e.g., a mask, stencil, or dynamic patterning device) MA and connected to a first positioner PM configured to precisely position the patterning device MA; and a substrate stage (e.g., a wafer stage) WT configured to hold a substrate (e.g., a wafer coated with resist) W and connected to a second positioner PW configured to precisely position the substrate W. Lithography apparatuses 100 and 100' also have a projection system PS configured to project a pattern imparted by the radiation beam B by the patterning device MA onto a target portion (e.g., comprising one or more dies) C of the substrate W. In the photolithography apparatus 100, the patterning device MA and the projection system PS are reflective. In the photolithography apparatus 100', the patterning device MA and the projection system PS are transmissive.

[0029] The irradiation system IL may include various types of optical components, such as refractive, reflective, catadioptric, magnetic, electromagnetic, electrostatic or other types of optical components, or any combination thereof, for guiding, shaping or controlling the radiation beam B.

[0030] The support structure MT holds the patterning device MA in a manner dependent on the orientation of the patterning device MA relative to the reference frame, the design of at least one of the lithography apparatuses 100 and 100', and other conditions such as whether the patterning device MA is held in a vacuum environment. The support structure MT can hold the patterning device MA using mechanical, vacuum, electrostatic, or other clamping techniques. The support structure MT can be, for example, a frame or stage, which can be fixed or movable. By using sensors, the support structure MT can ensure that the patterning device MA is, for example, in the desired position relative to the projection system PS.

[0031] The term "patterning device" should be broadly interpreted to refer to any device that can be used to pattern the radiation beam B in its cross-section to create a pattern in a target portion C of the substrate W. The pattern applied to the radiation beam B may correspond to a specific functional layer in the device created in the target portion C to form an integrated circuit.

[0032] The patterning device MA can be transmissive (e.g., Figure 1B Photolithography apparatus 100' shown) or reflective (such as) Figure 1A(See photolithography apparatus 100). Examples of patterning apparatus may include photomasks, masks, programmable mirror arrays, or programmable LCD panels. Masks are well known in photolithography and include mask types such as binary, alternating phase-shift, or attenuation phase-shift masks, as well as various hybrid mask types. One example of a programmable mirror array employs a matrix arrangement of small mirrors, each of which can be individually tilted to reflect an incident radiation beam in different directions. The tilted mirrors impart a pattern to the radiation beam B, which is reflected by the matrix of small mirrors.

[0033] The term "projection system" (PS) can encompass any type of projection system, including refractive, reflective, catadioptric, magnetic, electromagnetic, and electrostatic optical systems, or any combination thereof, depending on the exposure radiation used or other factors (e.g., the use of an immersion liquid on the substrate W or the use of a vacuum). A vacuum environment can be used for EUV or electron beam radiation because other gases may absorb too much radiation or electrons. Therefore, a vacuum environment can be provided throughout the beam path by means of vacuum walls and vacuum pumps.

[0034] The lithography apparatus 100 and / or lithography apparatus 100' can be of the type having two (dual) or more substrate stages WT (and / or two or more mask stages). In such "multi-stage" machines, additional substrate stages WT can be used in parallel, or preparatory steps can be performed on one or more stages while one or more other substrate stages WT are being used for exposure. In some cases, the additional stage may not be a substrate stage WT.

[0035] Photolithography apparatuses can also be of the type in which at least a portion of the substrate can be covered by a liquid (e.g., water) having a relatively high refractive index to fill the space between the projection system and the substrate. Immersion liquids can also be applied to other spaces within the photolithography apparatus, such as between the mask and the projection system. Immersion techniques are well known in the art for increasing the numerical aperture of a projection system. The term “immersion” as used herein does not imply that a structure such as the substrate must be submerged in a liquid. For example, during exposure, the liquid may be positioned between the projection system and the substrate.

[0036] refer to Figure 1A and Figure 1B The irradiator IL receives the radiation beam from the radiation source SO. For example, when the source SO is an excited excimer laser, the source SO and the lithography apparatus 100, 100' can be separate physical entities. In such cases, the source SO is not considered part of forming the lithography apparatus 100 or 100', and the radiation beam B is delivered by means of the beam delivery system BD (in... Figure 1BThe beam delivery system BD (from source SO to irradiator IL) includes, for example, a suitable guide mirror and / or beam expander. In other cases, such as when the source SO is a mercury lamp, the source SO may be a component of the lithography apparatus 100, 100'. The radiation system may include the source SO, the irradiator IL, and / or the beam delivery system BD.

[0037] The irradiator IL may include a regulator AD ( Figure 1B This is used to adjust the angular intensity distribution of the radiation beam. Generally, at least the outer and / or inner radial ranges of the intensity distribution in the pupil plane of the irradiator (often referred to as "σ-outer" and "σ-inner," respectively) can be adjusted. Furthermore, the irradiator IL may include various other components (in... Figure 1B (In the middle), such as integrator IN and concentrator CO. Irradiator IL can be used to adjust the radiation beam B to have the desired uniformity and intensity distribution in its cross-section.

[0038] refer to Figure 1A A radiation beam B is incident on a patterning device (e.g., a mask) MA, which is held on a support structure (e.g., a mask stage) MT and patterned by the patterning device MA. In the lithography apparatus 100, the radiation beam B is reflected from the patterning device (e.g., the mask) MA. After reflection from the patterning device (e.g., the mask) MA, the radiation beam B passes through a projection system PS, which focuses the radiation beam B onto a target portion C of the substrate W. The substrate stage WT can be precisely moved (e.g., to position different target portions C in the path of the radiation beam B) by means of a second positioner PW and a position sensor IF2 (e.g., an interferometric device, a linear encoder, or a capacitive sensor). Similarly, a first positioner PM and another position sensor IF1 can be used to precisely position the patterning device (e.g., the mask) MA relative to the path of the radiation beam B. The patterning device (e.g., the mask) MA and the substrate W can be aligned using mask alignment marks M1, M2 and substrate alignment marks P1, P2.

[0039] refer to Figure 1B A radiation beam B is incident on a patterning device (e.g., a mask MA), which is held on a support structure (e.g., a mask stage MT) and patterned by the patterning device. After passing through the mask MA, the radiation beam B passes through a projection system PS, which focuses the radiation beam onto a target portion C of the substrate W. The projection system has a conjugate pupil PPU that is conjugate to the illumination system pupil IPU. The portions of the radiation emanate from the intensity distribution at the illumination system pupil IPU and pass through the mask pattern without being affected by mask pattern diffraction, creating an image of the intensity distribution at the illumination system pupil IPU.

[0040] The projection system PS projects an image of a mask pattern MP onto a photoresist layer coated on a substrate W, where the image is formed by diffracted beams generated from radiation of intensity distribution from the marked pattern MP. For example, the mask pattern MP may comprise an array of lines and spacings. Diffraction at the array, distinct from zero-order diffraction, generates deflected diffracted beams that change direction in a direction perpendicular to the lines. The undiffracted beam (i.e., the so-called zero-order diffracted beam) passes through the pattern without any change in propagation direction. The zero-order diffracted beam passes through the upper lens or upper lens group of the projection system PS (upstream of the conjugate pupil PPU of the projection system PS) to reach the conjugate pupil PPU. The intensity distribution portion in the plane of the conjugate pupil PPU associated with the zero-order diffracted beam is an image of the intensity distribution in the illumination system pupil IPU of the illumination system IL. For example, the aperture device PD is positioned at or substantially at the plane included with the conjugate pupil PPU of the projection system PS.

[0041] The projection system PS is arranged to capture (e.g., using a lens or lens group L) a zero-order diffraction beam, a first-order diffraction beam, and / or a higher-order diffraction beam (not shown). In some aspects, dipole illumination can be used to image a line pattern extending in a direction perpendicular to the line to take advantage of the resolution enhancement effect of dipole illumination. For example, the first-order diffraction beam interferes with the corresponding zero-order diffraction beam at a level of the wafer W to create an image of the line pattern MP at the highest possible resolution and process window (i.e., the available depth of focus combined with permissible exposure dose deviations). In some aspects, astigmatism can be reduced by providing a radiating pole (not shown) in the opposing confinement of the illumination system pupil IPU. Furthermore, in some aspects, astigmatism can be reduced by blocking the zero-order beam associated with the radiating pole in the opposing confinement in the conjugate pupil PPU of the projection system. This is described in more detail in US 7,511,799 B2, published March 31, 2009, which is incorporated herein by reference in its entirety.

[0042] With the aid of a second positioner PW and a position sensor IFD (e.g., an interferometric apparatus, a linear encoder, or a capacitive sensor), the substrate stage WT can be moved precisely (e.g., to position different target portions C within the path of the radiation beam B). Similarly, the first positioner PM and another position sensor ( Figure 1B (Not shown in the image) can be used to precisely position the mask MA relative to the path of the radiation beam B (e.g., after mechanical retrieval from a mask library or during scanning).

[0043] Generally, the movement of the mask stage MT can be achieved using long-stroke modules (coarse positioning) and short-stroke modules (fine positioning), which constitute part of the first positioner PM. Similarly, the movement of the substrate stage WT can be achieved using long-stroke modules and short-stroke modules that form part of the second positioner PW. In the case of a stepper (as opposed to a scanner), the mask stage MT can be connected to a short-stroke actuator or can be fixed. The mask MA and substrate W can be aligned using mask alignment marks M1, M2 and substrate alignment marks P1, P2. Although the substrate alignment marks (as shown) occupy dedicated target portions, they can be located in the space between the target portions (called scribing alignment marks). Similarly, when more than one die is provided on the mask MA, the mask alignment marks can be located between the dies.

[0044] The mask stage MT and patterning device MA can be located within a vacuum chamber V, where an in-vacuum robot IVR can be used to move the patterning device (such as a mask) into and out of the vacuum chamber. Alternatively, when the mask stage MT and patterning device MA are outside the vacuum chamber, an out-of-vacuum robot can be used for various transport operations, similar to the in-vacuum robot IVR. Both the in-vacuum and out-of-vacuum robots can be calibrated to smoothly transfer any payload (e.g., a mask) to a fixed kinematic mount at the transfer station.

[0045] Photolithography apparatuses 100 and 100' can be used in at least one of the following modes: 1. In step mode, the support structure (e.g., mask stage) MT and substrate stage WT remain substantially stationary, while the entire pattern imparted by the radiation beam B is projected onto the target portion C at once (i.e., single static exposure). The substrate stage WT is then shifted in the X and / or Y directions, thereby allowing different target portions C to be exposed. 2. In the scanning mode, the support structure (e.g., mask stage) MT and the substrate stage WT are scanned synchronously while a pattern imparted to the radiation beam B is projected onto the target portion C (i.e., single dynamic exposure). The velocity and direction of the substrate stage WT relative to the support structure (e.g., mask stage) MT can be determined by the (reduced) magnification and image inversion characteristics of the projection system PS. 3. In another mode, the support structure (e.g., a mask stage) MT remains substantially stationary to hold the programmable patterning apparatus, while the substrate stage WT is moved or scanned, simultaneously projecting a pattern imparted by the radiation beam B onto the target portion C. A pulsed radiation source SO can be employed, and the programmable patterning apparatus can be updated as needed after each movement of the substrate stage WT or between successive radiation pulses during scanning. This mode of operation can be readily applied to maskless lithography utilizing programmable patterning apparatus (e.g., a programmable mirror array).

[0046] Combinations and / or variations or entirely different usage patterns described may also be used.

[0047] In some aspects, the lithography apparatus 100 includes an extreme ultraviolet (EUV) source configured to generate an EUV radiation beam for EUV lithography. Generally, the EUV source is configured in a radiation system, and a corresponding irradiation system is configured to modulate the EUV radiation beam from the EUV source.

[0048] In some aspects, the lithography apparatus 100' includes a deep ultraviolet (DUV) source configured to generate a DUV radiation beam for DUV lithography. Generally, the DUV source is configured in a radiation system, and a corresponding irradiation system is configured to modulate the DUV radiation beam from the DUV source.

[0049] Example lithography unit

[0050] Figure 1C A lithography unit 102, sometimes referred to as a lithocell or cluster, is shown according to some aspects. A lithography apparatus 100 or 100' may form part of the lithography unit 100. The lithography unit 102 may also include one or more devices for performing pre-exposure and post-exposure processing on a substrate. Conventionally, these devices include a spin coater SC for depositing a resist layer, a developer DE for developing the post-exposure resist, a cooling plate CH, and a baking plate BK. A substrate processor or robot RO picks up substrates from input / output ports I / O1, I / O2, moves them between different processing devices, and delivers them to the loading chamber LB of the lithography apparatus 100 or 100'. These devices (generally referred to collectively as a coating and developing system (track)) are controlled by a coating and developing system control unit TCU, which in turn is controlled by a supervisory control system SCS, which in turn controls the lithography apparatus via a lithography control unit LACU. Therefore, different devices can be operated to maximize throughput and processing efficiency.

[0051] Example mask platform

[0052] Figure 2 and Figure 3 A mask stage 200 is shown according to some aspects. The mask stage 200 may include a top stage surface 202, a bottom stage surface 204, a side stage surface 206, and a fixture 300. In some aspects, the mask stage 200 with the fixture 300 can be implemented in a photolithography apparatus LA. For example, the mask stage 200 can be a support structure MT in the photolithography apparatus LA. In some aspects, the fixture 300 can be disposed on the top stage surface 202. For example, as... Figure 2As shown, the clamp 300 can be positioned at the center of the top table surface 202, with the front side 302 of the clamp perpendicular to the top table surface 202.

[0053] In some lithography apparatuses, such as lithography apparatus LA, a mask stage 200 with clamps 300 can be used to hold and position a mask 408 for scanning or patterning operations. In one example, the mask stage 200 can be supported by a powerful drive, a large balancing mass block, and a heavy-duty frame. In one example, the mask stage 200 can have a large inertia and weigh over 500 kg to advance and position a mask 408 weighing approximately 0.5 kg. To achieve the reciprocating motion of the mask 408 (typically found in lithography scanning or patterning operations), acceleration and deceleration forces can be provided by a linear motor driving the mask stage 200.

[0054] In some aspects, such as Figure 2 and Figure 3 As shown, the mask stage 200 may include a first encoder 212 and a second encoder 214 for positioning operations. For example, the first encoder 212 and the second encoder 214 may be interferometers. The first encoder 212 may be attached along a first direction (e.g., the lateral direction of the mask stage 200, i.e., the X direction). And the second encoder 214 may be attached along a second direction (e.g., the longitudinal direction of the mask stage 200, i.e., the Y direction). In some aspects, such as Figure 2 and Figure 3 As shown, the first encoder 212 can be orthogonal to the second encoder 214.

[0055] like Figure 2 and Figure 3 As shown, the mask stage 200 may include a clamp 300. The clamp 300 is configured to hold a mask 408 in a fixed plane on the mask stage 200. The clamp 300 includes a clamp front side 302 and may be disposed on a top stage surface 202. In some aspects, the clamp 300 may use mechanical, vacuum, electrostatic, or other suitable clamping techniques to hold and secure objects. In some aspects, the clamp 300 may be an electrostatic clamp that can be configured to electrostatically clamp (i.e., hold) an object, such as the mask 408, in a vacuum environment. Figure 4For EUV generation performed in a vacuum environment, it can be difficult to use vacuum fixtures to hold the mask or mask plate. Instead, one or more electrostatic fixtures can be used. For example, fixture 300 may include electrodes, a resistive layer on the electrodes, a dielectric layer on the resistive layer, and protrusions extending from the dielectric layer. In use, a voltage, such as several kilovolts, can be applied to fixture 300. And current can flow through the resistive layer such that the voltage at the upper surface of the resistive layer will be substantially the same as the voltage of the electrodes, and an electric field is generated. In addition, Coulomb forces (i.e., the attractive force between oppositely charged particles) attract the object to fixture 300 and hold the object in place. In some aspects, fixture 300 may be a rigid material, such as a metal, a dielectric, a ceramic, or a combination thereof.

[0056] Example mask switching device

[0057] Figure 4 A mask exchange device 401 is shown according to some aspects. The mask exchange device 401 can be configured to minimize mask exchange time, particle generation, and contact forces or stresses from the jig 300 and / or the mask 408 to reduce damage to the jig 300 and the mask 408, and to increase the overall throughput of the mask exchange process, for example, in a lithography apparatus LA.

[0058] The mask exchange device 401 may include a mask stage 200, a fixture 300, and a vacuum robot 400. The vacuum robot 400 may include a mask processor 402.

[0059] In some respects, the mask processor 402 may be a high-speed switching device (RED) configured to rotate efficiently and minimize mask switching time. For example, the mask processor 402 may save time by moving multiple masks from one location to another substantially simultaneously rather than serially.

[0060] In some aspects, the mask processor 402 may include one or more mask processor arms 404. The mask processor arm 404 may include a mask substrate 406. The mask substrate 406 may be configured to hold an object, such as a mask 408.

[0061] In some aspects, the mask substrate 406 may be an extreme ultraviolet inner box (EIP) for a mask. In some aspects, the mask substrate 406 includes a front side 407 of the mask substrate, and the mask 408 includes a back side 409 of the mask.

[0062] In some respects, the mask substrate 406 can hold the mask 408 such that the front side 407 and the back side 409 of the mask substrate each face the top stage surface 202 and the front side 302 of the fixture. For example, the front side 407 and the back side 409 of the mask substrate can be perpendicular to the top stage surface 202 and the front side 302 of the fixture.

[0063] In some aspects, such as Figure 4 As shown, the mask processor arms 404 can be arranged symmetrically around the mask processor 402. For example, the mask processor arms 404 can be spaced apart by approximately 90 degrees, 120 degrees, or 180 degrees. In some aspects, the mask processor arms 404 can be arranged asymmetrically around the mask processor 402. For example, two mask processor arms 404 can be spaced apart by approximately 135 degrees, while other two mask processor arms 404 can be spaced apart by approximately 90 degrees.

[0064] In some respects, during the mask exchange process, the mask stage 200 with clamp 300 can be adjusted by multiple moving parts (e.g., long-stroke stage (coarse motion), short-stroke stage (fine motion)).

[0065] Example Actuator

[0066] The aspects described in this article provide structures and functions for addressing problems related to preventing mechanical collision damage in lithography apparatuses.

[0067] Figure 5 A stage 500 for supporting object 502 is shown according to some aspects. In some aspects, stage 500 may represent different views of mask stage 200 to emphasize additional details. Stage 500 may include object 502, moving frame 504, base frame 506, balancing mass block 508, actuator device 510, and mechanical buffers 512a, 512b.

[0068] In some respects, stage 500 can be used for a lithography apparatus LA (FIG. 1), a lithography unit (e.g., an arrangement of multiple lithography apparatuses), an inspection apparatus, or any apparatus in general having a stage implementation for supporting and moving objects. For example, stage 500 can be shown as a specific implementation of a wafer stage WT or a mask stage MT (FIG. 1).

[0069] In some aspects, the moving frame 504 can be an actuation structure (e.g., for coarse motion of the object 502). In the photolithography process, the object 502 can be a photomask, a wafer, etc. Furthermore, the stage 500 may include additional movement allowance for transporting the object 502 to and from the loading area. Therefore, the moving frame 504 can handle the coarse motion of the stage 500, for example, on the order of tens, hundreds, or thousands of millimeters. Other distances can be chosen based on their suitability for a particular implementation.

[0070] In some respects, object 502 can be temporarily fixed to moving frame 504 by pressing it against it. This can be achieved through vacuum clamping (suction), electrostatic clamping (electrostatic force), mechanical clamping, etc. Under ideal conditions, the mutual friction between object 502 (e.g., a mask) and moving frame 504 (e.g., a chuck) ensures that there is no slippage between them. However, the mechanical stress generated by high acceleration can cause some slippage, resulting in printing errors. These errors can be extremely destructive, as thousands of equipment products may have been lost by the time the error is detected.

[0071] In some aspects, the moving frame 504 may be coupled to a balancing mass 508 adjacent to the moving frame 504. In some aspects, the balancing mass 508 may be configured to mimic coarse motion, provide damping, and reset the moving frame 504 to an equilibrium position. In some aspects, the balancing mass 508 may be configured to absorb reaction forces exerted by the moving frame 504. In some aspects, the balancing mass 508 may be supported by a base frame 506 while still allowing relative movement between the moving frame 504 and the balancing mass 508. The movement of the moving frame 504 may be limited to one axis (e.g., the Y-axis) using guide rails or a non-contact method (e.g., magnetic levitation) (guiding device not shown). The coordinate axes X and Y are provided as examples and should not be construed as limiting.

[0072] In some respects, actuator device 510 may be responsible for the coarse motion of the moving frame 504. Actuator device 510 may be arranged to accelerate the moving frame 504 by providing a driving force between the moving frame 504 and the counterweight 508. The driving force causes the frame 504 to accelerate in the desired direction. Due to the conservation of momentum, the driving force is also applied to the counterweight 508 in an equal magnitude, but in the opposite direction to the desired direction. Typically, the mass of the counterweight 508 is significantly greater than the mass of the moving frame 504.

[0073] In some aspects, actuator device 510 may include a coil (e.g., a wire wound around a ferromagnetic core) and a magnet. In some aspects, the magnet may include a material responsive to a magnetic field (e.g., a metal, iron, ferrite, etc.). In some aspects, actuator device 510 may include a mover 511 or 511' fixed to the moving frame 504. Actuator device 510 may actuate the moving frame 504 by providing a driving force to move the mover 511 or 511' through the interaction of the coil and the magnet. In some aspects, the mover 511 (e.g., a coil winding around a ferromagnetic core) may include a coil winding around a ferromagnetic core and a magnet. In some aspects, the mover 51 ... Figure 6A (As shown) may include coils (e.g., such as...) Figure 6A Coils 626a to 626f (shown) are configured to interact with a magnet of actuator device 510 (e.g., such as...). Figure 6AThe magnet 622 shown interacts with each other. In some respects, the mover 511' ( Figure 6B (as shown) may include magnets (e.g., Figure 6B The magnet 622 shown is configured to interact with the coil of the actuator device 510 (e.g., Figure 6B The coils 626a to 626f shown interact.

[0074] In some aspects, actuator device 510 may include an electromagnet configured to generate and modulate a magnetic field. The electromagnet may include a coil of wire (e.g., a wire wound around a metal core, such as a ferrite core) Figure 6A and Figure 6B Coils 626a to 626f are shown. Actuator device 510 can cause the coils to repel and attract magnets by reversing the direction of the magnetic field. The actuator setup described herein can be referred to using other technical terms (e.g., linear actuator). The number and configuration of actuator-related components are not limited to... Figure 5 Those shown. Fewer or more actuator-related components and other configurations can be used.

[0075] In some respects, the actuator device 510 can use high acceleration to actuate the moving frame 504. For example, the acceleration can be, for instance, approximately 4g to 100g, 10g to 50g, 20g to 40g, etc. (where g is 9.8 m / s²). 2 High acceleration can increase lithographic printing yield (e.g., increase throughput). Photolithographic pattern transfer can be performed as the moving frame 504 moves, for example, when it reaches a constant glide speed. The glide speed can be, for example, 0.5 m / s to 10.0 m / s, 1.0 m / s to 7.0 m / s, 3.0 m / s to 5.0 m / s, etc. In some aspects, the moving frame 504 can be configured to move with a predetermined amount of kinetic energy based on these glide speeds. Performing pattern transfer at a constant scan speed can result in more accurate transfer of the printed pattern, while printing during acceleration can be accompanied by greater positional uncertainty.

[0076] The term "throughput" can be understood as the amount of material or article passing through a system or process. In some respects, the term "throughput" can be used to characterize the rate of lithography fabrication. For example, throughput can refer to the rate at which lithography fabrication is completed on a wafer, the rate at which a wafer completes a specific fabrication step and moves to the next step, etc. Throughput can be a performance indicator of a lithography apparatus. The goal is for a lithography system to output as many products as possible in the shortest possible time. Lithography fabrication can involve several complex processes. Each part of the process can involve trade-offs between quality (e.g., sub-nanometer precision, high yield) and disadvantages (e.g., slower fabrication, cost). For example, to increase pattern transfer speed, lithography can actuate the substrate and / or mask more quickly and precisely.

[0077] However, achieving faster actuation exposes lithography apparatuses to a higher risk of mechanical damage in the event of fault scenarios. Fault scenarios can include malfunctions involving actuators, software, temperature, etc. As a result, fault scenarios may indicate the need to shut down the actuators for material and machine damage control. Shutting down the actuators exposes the lithography apparatus to collision events, in which the stage could impact the base frame. Therefore, the lithography apparatus can use devices to dissipate all the kinetic energy of the stage. Kinetic energy dissipation can be achieved through electromechanical braking, conventional mechanical dampers, or both.

[0078] In some respects, Figure 5 The motion of the components of stage 500 is illustrated when an error scenario occurs. When the error scenario occurs, the moving frame 504 may move at a velocity 514 in a first direction. The balancing mass 508 may be force-coupled with the moving frame 504, resulting in a velocity 516 in a second direction for the balancing mass 508. In some aspects, the actuator device 510 may be configured to stop the movement of the moving frame 504 by braking in response to the error scenario to prevent collision damage.

[0079] To reduce the first directional velocity 514 of the moving frame 504, one or more actuator devices 510 can be electrically short-circuited. In some aspects, the actuator devices 510 can be selectively short-circuited in real time. When the coil moves relative to the magnet, the electrically short-circuited actuator devices 510 can induce a current in one or more actuator devices 510.

[0080] Inducing a current in the coils generates a magnetic field in one or more coils that is opposite to the magnetic field from one or more magnets, thereby generating an electric braking force 518 in a second direction opposite to the direction of motion of the moving frame 504 in the first direction velocity 514. The electric braking force 518 can generate a reaction force 520 on the balancing mass 508 in the first direction opposite to the second direction velocity 516 of the balancing mass 508. The electric braking force 518 and the reaction force 520 can reduce the first direction velocity 514 of the moving frame 504 and the second direction velocity 516 of the balancing mass 508 before the moving frame 504 impacts the mechanical buffer 512a and the balancing mass 508 impacts the mechanical buffer 512b. Therefore, the electric braking force 518 can reduce the kinetic energy of the moving frame 504.

[0081] In some aspects, mechanical buffer 512a may be a shock absorber, damper, spring, or a combination thereof, used to absorb the remaining kinetic energy of the moving frame 504 after one or more actuator devices 510 have completed their braking actions in response to an error scenario. In some aspects, mechanical buffer 512b may be a shock absorber, damper, spring, or a combination thereof, used to absorb the remaining kinetic energy of the balancing mass block 508 after one or more actuator devices 510 have completed their braking actions in response to an error scenario. In some aspects, mechanical buffers 512a and 512b may be shock absorbers, dampers, springs, or a combination thereof.

[0082] In some respects, electric force braking can reduce the braking distance of the moving frame 504. Therefore, electric force braking can make it possible to reduce the size of the mechanical buffers 512a and 512b in order to make efficient use of the limited volume in the lithography apparatus.

[0083] In some respects, the moving frame 504 can operate in a vacuum environment. Using a mechanical damper with a damper in a vacuum environment can lead to hydraulic fluid leakage and environmental pollution. As a result, such dampers should be used in a vacuum environment. Therefore, the electric braking force 518 can provide damping functionality in a vacuum environment without the disadvantages of a mechanical damper.

[0084] In some respects, electric force braking can be used to reduce the speed of the wafer stage. In some respects, the moving frame 504 can be the wafer stage (e.g., Figure 1A and Figure 1B As shown in WT). In some aspects, the moving frame 504 (e.g., Figure 1A and Figure 1B The WT shown may include one or more actuator devices 510, which are configured to be electrically short-circuited to generate a motion with the moving frame 504 (e.g., Figure 1A and Figure 1BThe first directional velocity 514 of the WT shown in the figure on the linear axis is opposite to the electric braking force 518, in order to reduce the moving frame 504 (e.g., Figure 1A and Figure 1B The braking distance (WT) shown in the figure is to prevent collision damage.

[0085] Figure 6A and Figure 6B Schematic cross-sectional views of actuator devices 510 and 510' according to some aspects are shown respectively. It should be understood that when discussing 5xx elements, Figure 6A and Figure 6B The description can also be referenced. Figure 5 In terms of actuator devices 510 and 510'. Figure 6A and Figure 6B While illustrated as a standalone device and / or system, aspects of this disclosure can be used in other devices, systems, and / or methods, such as, but not limited to, a lithography apparatus LA, a support structure MT, and a substrate stage WT. In some aspects, actuator device 510 or 510' may be part of a lithography apparatus (e.g., a lithography apparatus LA). In some aspects, actuator device 510 or 510' may be part of a support structure (e.g., a support structure MT for a patterning apparatus MA). In some aspects, actuator device 510 or 510' may include a magnet 622, a back iron plate 624, a mover 511 or 511', coils 626a to 626f, and a controller 628.

[0086] In some aspects, actuator device 510 or 510' may be a linear actuator configured to provide a driving force along a single axis (e.g., the Y-axis). Multiple linear actuators may be applied to provide driving forces along multiple axes. In some aspects, actuator device 510 or 510' may be a planar actuator to provide driving forces along multiple axes. For example, a planar actuator may be arranged to move the substrate stage WT in six degrees of freedom.

[0087] In some aspects, actuator device 510 or 510' may be an electromagnetic actuator comprising at least one coil and at least one magnet. Actuator device 510 or 510' may be arranged to move at least one coil relative to at least one magnet by applying current to at least one coil. In some aspects, actuator device 510 may be a moving-coil actuator having at least one coil coupled to a moving frame 504, and one or more coils moving at high speed adjacent to one or more stationary magnets. In some aspects, actuator device 510' may be a moving-magnet actuator having at least one magnet coupled to a moving frame 504, and one or more magnets moving at high speed adjacent to one or more stationary coils. In some aspects, actuator device 510 or 510' may be a voice coil actuator, a magnetoresistive actuator, a Lorentz actuator, or a piezoelectric actuator, or any other suitable actuator.

[0088] In some aspects, such as Figure 6A As shown, the actuator device 510 may include an array of multiple permanent magnets 622 arranged in two parallel planes extending in the Y direction and the X direction perpendicular to the Y and Z directions. Each array of permanent magnets 622 forming one of the two parallel planes may be supported by a corresponding back plate 624. The back plate 624 may support the magnets 622 and retain the magnetic field generated by the magnets 622 within the actuator device 510, thereby improving the efficiency of the actuator device 510. In some aspects, the back plate 624 may be fixed to... Figure 5 The balancing mass block 508 shown.

[0089] In some aspects, such as Figure 6A As shown, a mover 511 movable relative to magnet 622 can be disposed between two planes of permanent magnet 622. In some aspects, mover 511 can carry a coil arrangement including multiple coils 626a to 626f, thereby forming a multiphase coil arrangement. Each coil 626a to 626f can be arranged such that the current flowing through each coil 626a to 626f can interact with the magnetic field generated by permanent magnet 622 to generate a Lorentz force in the principal direction (here, the Y direction). The coil arrangement in mover 511 may include a first coil portion formed by coils 626a to 626c and a second coil portion formed by coils 626d to 626f. Figure 6AIn the aspects shown, the first coil portion formed by coils 626a to 626c and the second coil portion formed by coils 626d to 626f can be arranged such that when substantially similar currents are supplied to the first coil portion formed by coils 626a to 626c and the second coil portion formed by coils 626d to 626f, substantially similar Lorentz forces are generated in the principal direction. In some aspects, the mover 511 can be fixed to... Figure 5 The movable frame 504 shown is such that the generated Lorentz force causes the movable frame 504 to move along the longitudinal axis (e.g., the Y-axis).

[0090] In some aspects, the coil arrangement can be a three-phase coil arrangement, wherein coils 626a and 626d can form the first phase, coils 626b and 626e can form the second phase, and coils 626c and 626f can form the third phase. In some aspects, the alternating current flowing through the first to the third phase can be sinusoidal, with a 120-degree phase shift between each phase. This aspect is merely a non-limiting example, and other phase configurations can be implemented.

[0091] In some aspects, the controller 628 coupled to the actuator device 510 can be configured to control the movement (e.g., translation) of the mover 511 along the longitudinal axis (e.g., the Y-axis) of the stage 500. In some aspects, the controller 628 can be coupled (e.g., electrically coupled) to coils 626a to 626f. In some aspects, the controller 628 can adjust the magnitude and direction of the current flowing through coils 626a to 626f to adjust the magnetic field strength and magnetic force. In some aspects, the controller 628 can selectively short-circuit its corresponding actuator device 510 to redirect the direction of the current flowing through coils 626a to 626f. For example, the controller 628 can short-circuit the actuator device 510 to induce a reverse current caused by the relative motion between coils 626a to 626f and magnet 622, thereby generating an electric braking force 518.

[0092] In some aspects, such as Figure 5 The movable frame 504 shown can move at a first directional velocity 514 during an error scenario. To prevent mechanical damage caused by a collision, the controller 628 can selectively short-circuit its corresponding actuator device 510 to redirect the direction of the current flowing through coils 626a to 626f. In some aspects, the controller 628 can short-circuit the actuator device 510 to induce a reverse current flowing through coils 626a to 626f caused by the relative motion between the magnet 622 and coils 626a to 626f. The induced reverse current flowing through coils 626a to 626f can be... Figure 5The moving frame 504 shown generates an electric braking force 518 in the opposite direction to its first directional velocity 514. In some respects, the electric braking force 518 can reduce... Figure 5 The moving frame 504 shown has a first directional velocity 514, and thus reduces its kinetic energy. In some respects, the controller 628 may be equipped with a capacitor configured to charge one or more actuators 510 with energy captured from the electric braking force 518.

[0093] In some respects, the electric braking force 518 can be defined by the following equation: in It is the derivative of velocity with respect to time. It is the derivative of the electromotive force with respect to time. It's speed. It is electromotive force. It's about the quality of the moving frame and the coil parameters. These are motor constants and coil parameters. It is a resistor, and the coil parameters are... It is an inductor. In some respects, the electric braking force 518 can depend on the aforementioned coil parameters, mass, and speed.

[0094] It will be obvious to those skilled in the art that, although Figure 6A The aspect shown is a dynamic coil configuration, but in Figure 6B In the aspects shown, the actuator can be a moving magnet actuator (e.g., actuator device 510'). In some aspects, a plurality of magnets 622 can be fixed to each other to form a mover 511' movable between two parallel planes of coils 626a to 626f. In some aspects, a back plate 624 can be fixed to... Figure 5 The balancing mass block 508 is shown. In some respects, the mover 511' can be fixed to... Figure 5The movable frame 504 shown is moved along the longitudinal axis (e.g., the Y-axis) by the generated Lorentz force. In some aspects, the moving-magnet configuration of the actuator device 510' may include a coil arrangement having multiple coils arranged in two parallel planes (a first coil portion formed by coils 626a to 626c and a second coil portion formed by coils 626d to 626f). In some aspects, the actuator device 510' may be a multiphase coil arrangement, wherein each phase includes two coils (coils 626a and 626d may form a first phase, coils 626b and 626e may form a second phase, and coils 626c and 626f may form a third phase). In some aspects, a controller 628 coupled to the actuator device 510' may be configured to control the movement (e.g., translation) of the mover 511' along the longitudinal axis (e.g., the Y-axis) of the stage 500. In some respects, the controller 628 can generate an electric braking force 518 caused by the relative motion of the magnet 622 and coils 626a to 626f, as per [the relevant information]. Figure 6A As stated above.

[0095] Figure 7A and Figure 7B A mechanical buffer based on some aspects is shown. It should be understood that when discussing 5xx components, Figure 7A and Figure 7B The description can also be referenced. Figure 5 In terms of. For example, in Figure 7A and Figure 7B In the middle, the mechanical buffer 512 or 512' can be Figure 5 One aspect of the mechanical buffer 512a shown, or Figure 5 One aspect of the mechanical buffer 512b is shown. Figure 7A In this configuration, the mechanical buffer 512 may include a damper 730, a spring 732, a guide pin 734, a collision portion 736, and a mounting portion 738. Figure 7B In this context, the mechanical buffer 512' may include a spring 732, a guide pin 734, a collision part 736, and a mounting part 738.

[0096] In some respects, the mechanical buffer 512 or 512' can be fixed at the mounting location 738. Figure 5The base frame 506 shown is designed to prevent collisions with fast-moving objects (e.g., in the event of an error scenario in a lithography apparatus). It is undesirable for the moving frame 504 or the balancing mass block 508 to collide with the base frame 506. Collisions can damage the structure and / or contaminate the clean lithography environment by releasing contaminating particles that can fall onto the mask and / or wafer. Therefore, the moving frame 504, the balancing mass block 508, and the base frame 506 can be protected by mechanical buffers 512 or 512'. In some aspects, the mechanical buffers 512 or 512' can be secured to the base frame 506 at mounting point 738 using any suitable method (e.g., adhesive, bolting, nailing, clamping, etc.). In some aspects, the mechanical buffers 512 or 512' can be arranged to maintain a non-zero clearance distance between the moving frame 504 and the base frame 506. In some aspects, the mechanical buffers 512 or 512' can be arranged to maintain a non-zero clearance distance between the balancing mass block 508 and the base frame 506.

[0097] In some respects, mechanical buffers can include any collapsible structure (e.g., springs, flexures, hydraulic devices, etc.).

[0098] In some respects, the guide pin 734 can be located inside the spring 732 to prevent unwanted deformation during crushing.

[0099] In one exemplary aspect, the mechanical buffer 512 may include a damper 730 configured to absorb kinetic energy from the moving frame 504 or the counterweight 508; and a spring 732 configured to push the moving frame 504 or the counterweight 508 in a direction opposite to the direction of motion.

[0100] In another exemplary aspect, the mechanical buffer 512' may include a spring 732 configured to push the moving frame 504 or the balancing mass block 508 in a direction opposite to the direction of motion.

[0101] During a collision event, the impact portion 736 of the mechanical buffer 512 or 512' may come into contact with the surface of the moving frame 504 or the counterweight 508. In some respects, the impact portion 736 may be a shape and material that will not cause mechanical damage to the moving frame 504 or the counterweight 508.

[0102] In some respects, the mechanical buffer 512 can operate in an environment that includes air, because the damper 730 may not function properly in a vacuum environment, and potential leakage of hydraulic fluid could contaminate the environment.

[0103] In some respects, the mechanical buffer 512' can operate in any environment (e.g., air, vacuum, etc.) because the spring 732 poses no risk of environmental pollution. Therefore, as... Figure 5 The electric braking force 518 shown can be advantageous in a lithography apparatus because it can provide damping in any environment (e.g., air, vacuum, etc.).

[0104] Figure 8 A braking method 800 is shown according to some aspects. In some aspects, in step 802, one or more actuator coils (e.g., Figure 6A and Figure 6B The coils 626a to 626f shown apply current to interact with one or more magnets (e.g., from adjacent actuator coils) to form current. Figure 6A and Figure 6B The magnetic field of the magnet 622 shown in the figure interacts with each other.

[0105] In some respects, in step 804, a force can be generated to move the frame in the lithography apparatus (e.g., Figure 5 The movable frame 504 shown) in the first direction (e.g., Figure 5 The vehicle moves in the first direction at a velocity of 514 (as shown).

[0106] In some aspects, in step 806, in response to an error scenario, one or more actuator coils may be short-circuited during movement of the moving frame to prevent collision damage. In some aspects, one or more actuator coils may be configured to be selectively short-circuited in real time.

[0107] In some respects, in step 808, a current may be induced in one or more actuator coils by a magnetic field from one or more magnets.

[0108] In some aspects, in step 810, a magnetic field opposite to the magnetic field from one or more magnets may be generated in one or more actuator coils to generate an electric braking force in a second direction opposite to the first direction of movement of the moving frame (e.g., electric braking force 518).

[0109] In some aspects, in step 812, the speed of the moving frame can be reduced before it strikes one or more mechanical buffers (e.g., mechanical buffer 512 or 512'). In some aspects, the speed of one or more actuator coils can be reduced in any environment to reduce the speed of the moving frame. In some aspects, the speed of one or more magnets can be reduced in any environment to reduce the speed of the moving frame.

[0110] Figure 8 The method steps can be performed in any conceivable order, and it is not required that all steps be performed. Furthermore, the above... Figure 8 The method steps described are merely examples, not limitations. That is, based on the reference... Figures 1A to 7B In terms of the description, alternative methods, steps, and functions were envisioned.

[0111] Various embodiments of this apparatus, system, and method are disclosed in the following list of numbered clauses: 1. A photolithography apparatus, comprising: An irradiation system configured to generate a radiation beam; A patterning system configured to apply a pattern to a bundle, the patterning system including a mask; A projection system configured to project a patterned beam onto a substrate; and Mask stage, the mask stage comprising: The moving frame is configured to move with a predetermined amount of kinetic energy; One or more balancing mass blocks are located adjacent to the moving frame, wherein the one or more balancing mass blocks are configured to absorb the reaction force exerted by the moving frame; One or more actuators are configured to move a moving frame and, in response to an error scenario, to stop the movement of the moving frame by braking to prevent collision damage, wherein the one or more actuators are configured to be electrically short-circuited to generate an electric braking force opposite to the direction of movement of the moving frame, thereby reducing the kinetic energy of the moving frame and reducing the braking distance of the moving frame; and One or more mechanical buffers configured to absorb any remaining kinetic energy of the moving frame after the one or more actuators have completed their braking actions in response to an error scenario. 2. A lithography apparatus according to Clause 1, wherein one or more of the actuators are configured to be selectively short-circuited in real time. 3. The lithography apparatus according to Clause 1, wherein the one or more mechanical buffers include the following configured to operate in an environment including air: a shock absorber, a damper, a spring, or a combination thereof. 4. The lithography apparatus according to Clause 3, wherein the one or more actuators include one or more coils adjacent to the one or more stationary magnets moving at high speed. 5. The lithography apparatus according to Clause 1, wherein the one or more mechanical buffers include springs such that only the electric braking force provides damping in a vacuum environment. 6. The lithography apparatus according to Clause 5, wherein the one or more actuators include one or more magnets adjacent to one or more fixed coils moving at high speed. 7. The lithography apparatus according to Clause 1 further includes a capacitor configured to charge the one or more actuators with energy captured from the electric braking force. 8. The photolithography apparatus according to Clause 1 further includes: A wafer stage includes one or more actuators configured to be electrically short-circuited to generate an electric braking force opposite to the direction of motion of the wafer stage on a linear axis, thereby reducing the braking distance of the wafer stage to prevent collision damage. 9. A braking system, comprising: The moving frame is configured to move with a predetermined amount of kinetic energy; One or more balancing mass blocks are located adjacent to the moving frame, wherein the one or more balancing mass blocks are configured to absorb the reaction force exerted by the moving frame; One or more actuators are configured to move the moving frame and, in response to an error scenario, to stop the movement of the moving frame by braking to prevent collision damage, wherein the one or more actuators are configured to be electrically short-circuited to generate an electric braking force opposite to the direction of movement of the moving frame, thereby reducing the kinetic energy of the moving frame and reducing the braking distance of the moving frame; and One or more mechanical buffers are configured to absorb any remaining kinetic energy of the moving frame after the one or more actuators have completed their braking actions in response to an error scenario. 10. The braking system according to Clause 9, wherein one or more actuators are configured to be selectively short-circuited in real time. 11. The braking system according to Clause 9, wherein the one or more mechanical buffers include the following configured to operate in an environment including air: a shock absorber, a damper, a spring, or a combination thereof. 12. The braking system according to Clause 11, wherein the one or more actuators comprise one or more coils adjacent to one or more stationary magnets moving at high speed. 13. The braking system according to Clause 9, wherein the one or more mechanical dampers include springs such that only the electric braking force provides damping in a vacuum environment. 14. The braking system according to Clause 13, wherein the one or more actuators comprise one or more magnets adjacent to one or more fixed coils moving at high speed. 15. The braking system according to Clause 9 further includes a capacitor configured to charge one or more actuators with energy captured from the electric braking force. 16. The braking system pursuant to Clause 9 also includes: A wafer stage includes one or more actuators configured to be electrically short-circuited to generate an electric braking force opposite to the direction of motion of the wafer stage on a linear axis, thereby reducing the braking distance of the wafer stage to prevent collision damage. 17. A braking method, comprising: Apply current to one or more actuator coils to interact with a magnetic field from one or more magnets adjacent to the one or more actuator coils; The force is generated to move the moving frame in the lithography apparatus in a first direction; In response to an error scenario, the one or more actuator coils are short-circuited during the movement of the moving frame to prevent collision damage; A current is induced in the one or more actuator coils by the magnetic field from the one or more magnets; A magnetic field opposite to the magnetic field from the one or more magnets is generated in the one or more actuator coils to generate an electric braking force in a second direction opposite to the first direction of the movement of the moving frame; and The speed of the moving frame is reduced before it impacts one or more mechanical buffers. 18. The braking method according to Clause 17, wherein one or more actuator coils are configured to be selectively short-circuited in real time. 19. The braking method according to Clause 17, wherein reducing the speed of the moving frame includes reducing the speed of the one or more actuator coils in any environment. 20. The braking method according to Clause 17, wherein reducing the speed of the moving frame includes reducing the speed of the one or more magnets in any environment.

[0112] The terms “radiation,” “beam,” “light,” and “illumination” may be used herein to refer to one or more types of electromagnetic radiation, such as ultraviolet (UV) radiation (e.g., wavelengths λ of 365 nm, 248 nm, 193 nm, 157 nm, or 126 nm), extreme ultraviolet (EUV or soft X-ray) radiation (e.g., wavelengths ranging from 5 nm to 100 nm, such as 13.5 nm), or hard X-rays with operating wavelengths less than 5 nm, and particle beams, such as ion beams or electron beams. Generally, radiation with wavelengths between about 400 nm and about 700 nm is considered visible radiation; radiation with wavelengths between about 780 nm and 3000 nm (or greater) is considered IR radiation. UV refers to radiation with wavelengths between about 100 nm and 400 nm. In photolithography, the term “UV” also applies to wavelengths produced by mercury discharge lamps: G line 436 nm; H line 405 nm; and / or, I line 365 nm. Vacuum UV or VUV (i.e., UV absorbed by a gas) refers to radiation with wavelengths of approximately 100 nm to 200 nm. Deep UV (DUV) generally refers to radiation with wavelengths ranging from 126 nm to 428 nm; in some applications, excimer lasers can generate DUV radiation for use in photolithography apparatuses. It should be understood that radiation with wavelengths in, for example, the range of 5 nm to 20 nm involves radiation having a wavelength band, at least a portion of which is within the range of 5 nm to 20 nm.

[0113] Although some aspects of this disclosure are described in the context of a lithography apparatus for manufacturing ICs, it should be understood that the lithography apparatus described herein can be used for other applications, such as for fabricating integrated optical systems, guiding and detecting patterns for magnetic domain memories, flat panel displays, LCDs, thin-film magnetic heads, etc. Those skilled in the art will understand that, in the context of such alternative applications, any use of the terms “wafer” or “die” herein can be considered as a specific example of the more general terms “substrate” or “target portion.” The substrate can be processed before or after exposure, for example in a coating and developing unit (typically an apparatus that applies a resist layer to the substrate and develops the exposed resist) and / or a metering unit. Where applicable, the aspects disclosed herein can be applied to such and other substrate processing tools. Furthermore, the substrate can be processed more than once, for example to create a multilayer IC; therefore, the term “substrate” as used herein can also refer to a substrate that already contains multiple processed layers.

[0114] Furthermore, although some aspects of this disclosure are described in the context of optical lithography, it should be understood that aspects of this disclosure are not limited to optical lithography. For example, in imprint lithography, the morphology in a patterning apparatus defines the pattern created on a substrate. The morphology of the patterning apparatus can be pressed into a resist layer supplied to the substrate, and the resist is subsequently cured by applying electromagnetic radiation, heat, pressure, or a combination thereof. The patterning apparatus is removed from the resist, leaving a pattern therein after the resist has cured.

[0115] It should be understood that the wording or terminology used herein is for descriptive purposes and not for limiting purposes, and therefore those skilled in the art (one or more) can interpret the terms or terminology of this specification based on the teachings herein.

[0116] The present disclosure has been described for the foregoing using functional building blocks that illustrate how specific functions and their relationships are implemented. For ease of description, the boundaries of these functional building blocks are arbitrarily defined herein. Alternative boundaries can be defined as long as the specified functions and their relationships are properly performed. The foregoing description of specific aspects will so fully reveal the general nature of the present disclosure that others, by applying knowledge within the scope of the art, can readily modify and / or adapt these specific aspects for various applications without excessive experimentation and without departing from the overall concept of the present disclosure. Therefore, based on the teachings and guidance given herein, such adaptations and modifications are intended to fall within the meaning and scope of equivalents of the disclosed aspects.

[0117] It should be understood that the Detailed Description section, and not the Summary and Abstract section, is intended to interpret the claims. The Summary and Abstract section may set forth one or more aspects of this disclosure as conceived by the inventors, but not necessarily all aspects, and is therefore not intended to limit this disclosure and the appended claims in any way. The breadth and scope of the protected subject matter should not be limited by any of the foregoing aspects, but should be defined according to the appended claims and their equivalents.

Claims

1. A photolithography apparatus, comprising: The irradiation system is configured to generate a radiation beam; A patterning system configured to apply a pattern to the bundle, the patterning system including a mask; The projection system is configured to project a patterned beam onto a substrate; as well as Mask stage, the mask stage comprising: The moving frame is configured to move with a predetermined amount of kinetic energy; One or more balancing mass blocks are located adjacent to the moving frame, wherein the one or more balancing mass blocks are configured to absorb the reaction force exerted by the moving frame; One or more actuators are configured to move the moving frame and, in response to an error scenario, to stop the movement of the moving frame by braking to prevent collision damage, wherein the one or more actuators are configured to be electrically short-circuited to generate an electric braking force opposite to the direction of movement of the moving frame, thereby reducing the kinetic energy of the moving frame and reducing the braking distance of the moving frame; and One or more mechanical buffers are configured to absorb any remaining kinetic energy of the moving frame after the one or more actuators have completed their braking actions in response to the erroneous scenario.

2. The lithography apparatus of claim 1, wherein the one or more actuators are configured to be selectively short-circuited in real time.

3. The photolithography apparatus according to claim 1, wherein: The one or more mechanical buffers include the following items configured to operate in an environment including air: shock absorbers, dampers, springs, or combinations thereof; and The one or more actuators include one or more coils that move at high speed adjacent to one or more stationary magnets.

4. The photolithography apparatus according to claim 1, wherein: The one or more mechanical buffers include springs such that only the electric braking force provides damping in a vacuum environment; and The one or more actuators include one or more magnets that move at high speed adjacent to one or more fixed coils.

5. The lithography apparatus of claim 1, further comprising a capacitor configured to charge the one or more actuators with energy captured from the electric braking force.

6. The photolithography apparatus according to claim 1, further comprising: A wafer stage includes one or more actuators configured to be electrically short-circuited to generate an electric braking force opposite to the direction of motion of the wafer stage on a linear axis, thereby reducing the braking distance of the wafer stage to prevent collision damage.

7. A braking system, comprising: The moving frame is configured to move with a predetermined amount of kinetic energy; One or more balancing mass blocks are located adjacent to the moving frame, wherein the one or more balancing mass blocks are configured to absorb the reaction force exerted by the moving frame; One or more actuators are configured to move the moving frame and, in response to an error scenario, to stop the movement of the moving frame by braking to prevent collision damage, wherein the one or more actuators are configured to be electrically short-circuited to generate an electric braking force opposite to the direction of movement of the moving frame, thereby reducing the kinetic energy of the moving frame and reducing the braking distance of the moving frame; and One or more mechanical buffers are configured to absorb any remaining kinetic energy of the moving frame after the one or more actuators have completed their braking actions in response to the erroneous scenario.

8. The braking system of claim 7, wherein the one or more actuators are configured to be selectively short-circuited in real time.

9. The braking system according to claim 7, wherein: The one or more mechanical buffers include the following items configured to operate in an environment including air: shock absorbers, dampers, springs, or combinations thereof; and The one or more actuators include one or more coils that move at high speed adjacent to one or more stationary magnets.

10. The braking system according to claim 7, wherein: The one or more mechanical buffers include springs such that only the electric braking force provides damping in a vacuum environment; and The one or more actuators include one or more magnets that move at high speed adjacent to one or more fixed coils.

11. The braking system of claim 7 further includes a capacitor configured to charge the one or more actuators with energy captured from the electric braking force.

12. The braking system according to claim 7, further comprising: A wafer stage includes one or more actuators configured to be electrically short-circuited to generate an electric braking force opposite to the direction of motion of the wafer stage on a linear axis, thereby reducing the braking distance of the wafer stage to prevent collision damage.

13. A braking method, comprising: Apply current to one or more actuator coils to interact with a magnetic field from one or more magnets adjacent to the one or more actuator coils; The force is generated to move the moving frame in the lithography apparatus in a first direction; In response to an error scenario, the one or more actuator coils are short-circuited during the movement of the moving frame to prevent collision damage; Current is induced in the one or more actuator coils by the magnetic field from the one or more magnets; A magnetic field opposite to the magnetic field from the one or more magnets is generated in the one or more actuator coils to generate an electric braking force in a second direction opposite to the first direction of the movement of the moving frame; as well as The speed of the moving frame is reduced before it impacts one or more mechanical buffers.

14. The braking method of claim 13, wherein the one or more actuator coils are configured to be selectively short-circuited in real time.

15. The braking method of claim 13, wherein reducing the speed of the moving frame comprises: Reduce the speed of the one or more actuator coils in any environment, or reduce the speed of the one or more magnets in any environment.

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