Method for manufacturing semiconductor device

Abstract

A method of manufacturing a semiconductor device includes: preparing a superposed substrate in which a first substrate and a second substrate are bonded via a heat conduction control film, a peeling promotion film, and a laser absorbing film; irradiating the laser absorbing film with laser; and separating the first substrate from the second substrate, in which the thermal conductivity control film, the peeling promoting film, and the laser absorbing film are laminated in this order from the first substrate side, the thermal conductivity of the thermal conductivity control film is different from the thermal conductivity of the peeling promoting film, and the thermal conductivity of the laser absorbing film is different from the thermal conductivity of the peeling promoting film. The thermal expansion coefficient of the peeling promoting film is greater than the thermal expansion coefficient of the laser absorbing film.

Description

Technical Field

[0001] This disclosure relates to a method for manufacturing a semiconductor device. Background Technology

[0002] Patent Document 1 discloses a method for manufacturing a semiconductor device, which includes the following processes: stacking a first film on a first substrate, and stacking a fourth film, a third film, and a second film on a second substrate; bonding the first film and the second film; irradiating the vicinity of the second film with an infrared laser beam; and peeling the second substrate at the interface between the third film and the fourth film. The coefficient of thermal expansion of the third film is greater than that of the second substrate. The coefficient of thermal expansion of the fourth film is smaller than that of the second substrate.

[0003] Existing technical documents

[0004] Patent documents

[0005] Patent Document 1: Japanese Patent Application Publication No. 2023-87907 Summary of the Invention

[0006] The problem the invention aims to solve

[0007] The technology disclosed herein is used to properly separate the first substrate and the second substrate in an overlapping substrate formed by bonding the first substrate and the second substrate.

[0008] Solution for solving the problem

[0009] One aspect of this disclosure is a method for manufacturing a semiconductor device, the method comprising the following steps: preparing an overlapping substrate formed by bonding a first substrate and a second substrate together via a thermally conductive control film, a release facilitating film, and a laser absorption film; irradiating the laser absorption film with a laser; and separating the first substrate and the second substrate, wherein the thermally conductive control film, the release facilitating film, and the laser absorption film are sequentially stacked from the first substrate side, the thermal conductivity of the thermally conductive control film is different from that of the release facilitating film, and the thermal expansion coefficient of the release facilitating film is greater than that of the laser absorption film.

[0010] Invention Effects

[0011] According to this disclosure, the first substrate and the second substrate can be appropriately separated in an overlapping substrate formed by bonding the first substrate and the second substrate. Attached Figure Description

[0012] Figure 1 This is a flowchart illustrating the main processes involved in wafer processing.

[0013] Figure 2This is an explanatory diagram showing the process of bonding a first wafer with a second wafer to form an overlapping wafer.

[0014] Figure 3 This is an explanatory diagram showing the situation of irradiating a laser beam onto a laser absorption film.

[0015] Figure 4 This is an explanatory diagram showing the separation of the first wafer and the second wafer.

[0016] Figure 5 This is an explanatory diagram illustrating the reuse of the first wafer.

[0017] Figure 6 This is a flowchart illustrating the main processes of laser processing.

[0018] Figure 7 This is an explanatory diagram illustrating how peeling promotes localized expansion of the membrane.

[0019] Figure 8 This is an explanatory diagram showing the situation where peeling occurs at the interface between the laser absorption film and the peeling promotion film.

[0020] Figure 9 This is an explanatory diagram showing the situation where peeling occurs at the interface between the laser absorption film and the peeling promotion film. Detailed Implementation

[0021] In the semiconductor device manufacturing process, a process is performed on an overlapping wafer formed by bonding two semiconductor substrates (hereinafter referred to as "wafers") to transfer the device layer formed on the surface of the first wafer to the second wafer. The transfer of the device layer from the first wafer to the second wafer is achieved through the following process: after reducing the bonding force between the first and second wafers by irradiating the interior of the overlapping wafer with a laser beam, the first wafer is separated from the second wafer. Furthermore, the separated first wafer is reused to be bonded to the next second wafer.

[0022] In the semiconductor device manufacturing method disclosed in Patent Document 1, after bonding a first substrate having a first film stacked thereon to a second substrate having a fourth film, a third film, and a second film stacked thereon, the second substrate is peeled off (separated) at the interface between the third and fourth films. That is, the second and third films are transferred from the second substrate to the first substrate. Furthermore, during the peeling off of the second substrate, an infrared laser beam is irradiated near the second film to locally heat it. This localized heating of the second film is transferred to the third film, causing it to expand. Consequently, the bonding force at the interface between the third and fourth films weakens, making it easier to peel off the third and fourth films. Moreover, the peeled second substrate is reused.

[0023] However, in the semiconductor device manufacturing method disclosed in Patent Document 1, the localized heating of the second film using an infrared laser beam is sometimes transmitted to the second substrate via the third and fourth films. In this case, the second substrate expands, causing localized unevenness, which becomes a defect, to form on the surface of the second substrate (the surface near the fourth film). To reuse the second substrate, the defects need to be removed to planarize the surface, but such planarization is time-consuming and costly. Furthermore, planarizing the surface of the second substrate thins it, making proper reuse difficult.

[0024] Furthermore, Patent Document 1 discloses a method for manufacturing a semiconductor device. In this method, after bonding a first substrate with a first film stacked on it to a second substrate with only a third film and a second film stacked on it but no fourth film stacked on it, the second substrate is peeled off at the interface between the third film and the second substrate. However, in this case, as described above, localized heating of the second film using an infrared laser beam is transmitted to the second substrate via the third film, causing the second substrate to expand and resulting in localized unevenness forming as a defect on the surface of the second substrate.

[0025] The technology disclosed herein was developed in view of the above circumstances, allowing for the appropriate separation of the first and second substrates in an overlapping substrate formed by bonding the first and second substrates. Hereinafter, a method for manufacturing a semiconductor device according to this embodiment will be described with reference to the accompanying drawings. Furthermore, in this specification and the accompanying drawings, elements having substantially the same functional structure are omitted from repeated description by using the same reference numerals.

[0026] In the semiconductor device manufacturing method of this embodiment, firstly, a first wafer W (which serves as a first substrate) is prepared. Figure 1 St1), and prepare the second wafer S as the second substrate. Figure 1 (St2). The preparation of these first wafers W and the second wafer S can also be carried out in parallel. Below, as... Figure 2 As shown, in the first wafer W, the side that is bonded to the second wafer S is called surface Wa, and the side opposite to surface Wa is called back surface Wb. Similarly, in the second wafer S, the side that is bonded to the first wafer W is called surface Sa, and the side opposite to surface Sa is called back surface Sb.

[0027] The first wafer W prepared in St1 is, for example, a semiconductor wafer such as a silicon substrate. In one embodiment, the first wafer W has a generally circular shape. Figure 2As shown in (a), a multilayer film Mw is formed on the surface Wa of the first wafer W. The multilayer film Mw sequentially comprises a thermal control film R, a lift-off facilitator film Q, a laser absorption film P, a device layer Dw, and a surface film Fw, starting from the surface Wa side. Furthermore, these thermal control film R, lift-off facilitator film Q, laser absorption film P, device layer Dw, and surface film Fw are formed on the first wafer W, for example, using a film deposition apparatus (not shown) via a CVD (Chemical Vapor Deposition) process.

[0028] The device layer Dw contains multiple devices. Examples of surface films Fw include oxide films (THOX films, SiO2 films, TEOS films), SiC films, SiCN films, or adhesives.

[0029] The laser-absorbing film P absorbs the laser beam (e.g., a CO2 laser beam) as described later. For example, an oxide film (SiO2 film, TEOS film) can be used for the laser-absorbing film P, but there are no particular limitations as long as the film absorbs the laser beam.

[0030] As described below, a release facilitator film Q is formed to facilitate the separation of the first wafer W from the second wafer S. The laser beam absorptivity of the release facilitator film Q is lower than that of the laser beam absorptivity of the laser beam absorbing film P, or the release facilitator film Q does not absorb the laser beam. The thermal expansion coefficient (volume expansion coefficient) of the release facilitator film Q is greater than that of the laser beam absorbing film P, and also greater than that of the thermally conductive control film R. The adhesion between the release facilitator film Q and the thermally conductive control film R is less than that between the release facilitator film Q and the laser beam absorbing film P. For the release facilitator film Q, for example, a polycrystalline material of a semiconductor (e.g., polysilicon), an amorphous material of a semiconductor (e.g., amorphous silicon), etc., can be used, but any material possessing the above-mentioned characteristics is acceptable and is not particularly limited.

[0031] To control heat conduction to the first wafer W so that the heat (thermal energy) generated by the laser beam-based laser absorption film P, as described later, is not transferred to the first wafer W, a thermal control film R is formed. The laser beam absorptivity of the thermal control film R is lower than that of the laser beam absorption film P, or the thermal control film R does not absorb the laser beam. The thermal conductivity of the thermal control film R differs from that of the lift-promoting film Q and also differs from that of the first wafer W.

[0032] In the following description, a thermal conductivity control film R that has a higher thermal conductivity than the peeling-promoting film Q and a higher thermal conductivity than the first wafer W is sometimes referred to as a high thermal conductivity control film R1. For example, a graphene film can be used for a high thermal conductivity control film R1, but there is no particular limitation as long as the film has the above-mentioned properties.

[0033] Additionally, a thermal conductivity control film that has a lower thermal conductivity than the peeling-promoting film Q and a lower thermal conductivity than the first wafer W is sometimes referred to as a low thermal conductivity control film R2. For example, Al2O3 or SiN can be used for the low thermal conductivity control film R2, but there are no particular limitations as long as it possesses the aforementioned characteristics.

[0034] The second wafer S prepared in St2 is, for example, a semiconductor wafer such as a silicon substrate. In one embodiment, the second wafer S has a generally circular shape. Figure 2 As shown in (b), a multilayer film Ms is formed on the surface Sa of the second wafer S. The multilayer film Ms has a device layer Ds and a surface film Fs sequentially from the surface Sa side. Furthermore, these device layers Ds and surface films Fs are formed on the second wafer S, for example, in a film deposition apparatus (not shown) by a CVD process.

[0035] The device layer Ds and surface film Fs are the same as the device layer Dw and surface film Fw of the first wafer W, respectively. In addition, sometimes the device layer Ds and surface film Fs are not formed on the surface Sa.

[0036] After preparing the first wafer W and the second wafer S as described above, as follows Figure 2 As shown in (c), the first wafer W and the second wafer S are bonded together to form the superimposed wafer T. Figure 1 St3). In St3, the surface film Fw of the first wafer W is bonded to the surface film Fs of the second wafer S. The bonding method between the first wafer W and the second wafer S is arbitrary, for example, the surface films Fw and Fs are modified by plasma treatment in a surface modification device (not shown), and hydrophilicated by supplying pure water to the surface films Fw and Fs in a surface hydrophilization device (not shown), and then the surface films Fw and Fs are bonded to each other by van der Waals forces and hydrogen bonds (intermolecular forces) in a bonding device (not shown).

[0037] Next, as Figure 3 As shown, a laser beam L is irradiated onto the laser absorption film P. Figure 1 (St4). In St4, a laser beam is pulsedly irradiated onto the laser absorption film P, or the interface between the laser absorption film P and the release facilitating film Q, in a laser irradiation apparatus (not shown). In this embodiment, the laser beam is a CO2 laser beam, and the wavelength of the CO2 laser beam is, for example, 8.9 μm to 11 μm. At this time, the laser beam L can be helically irradiated onto the entire surface of the laser absorption film P when viewed from above, or the laser beam L can be concentrically and annularly irradiated onto the entire surface of the laser absorption film P. In addition, the laser beam L passes through the first wafer W, the release facilitating film Q, and the thermal control film R from the back side Wb side of the first wafer W, and is absorbed in the laser absorption film P. Moreover, the bonding strength at the interface between the laser absorption film P and the release facilitating film Q is reduced by the laser beam L.

[0038] In the following description, the interface where the bonding strength inside the overlapping wafer T has decreased (in this embodiment, the interface between the laser absorption film P and the peeling promotion film Q) is sometimes referred to as the "separation surface". Furthermore, in this embodiment, "decrease in bonding strength" refers to a state where the bonding strength has decreased at least compared to before irradiation by the laser beam L, including the peeling of the laser absorption film P and the peeling promotion film Q.

[0039] Furthermore, in St4, the laser absorption film P is locally heated via the laser absorption film P. Its heat energy is transferred to the thermal control film R via the peel-promoting film Q, but not to the first wafer W via the thermal control film R. Therefore, deformation of the first wafer W due to heat energy can be suppressed. Moreover, details of the heat transfer control effect based on the thermal control film R and the effect based on the irradiation of the laser beam L, namely the decrease in the bonding strength between the laser absorption film P and the peel-promoting film Q, will be described later.

[0040] Next, as Figure 4 As shown, the first wafer W is separated from the second wafer S. Figure 1 (St5). In St5, in a separation device (not shown), the first wafer W and the second wafer S are separated based on the interface between the laser absorption film P and the peeling promotion film Q, where the bonding strength decreased in St4.

[0041] The method for separating the first wafer W and the second wafer S is arbitrary. As an example, such as... Figure 4 As shown in (a), the adsorption holding disk (holding disk: chuck) 10 adsorbs and holds the back surface Sb of the second wafer S, and the adsorption pad 11 adsorbs and holds the surface Wa of the first wafer W. Then, as... Figure 4 As shown in (b), the first wafer W is separated from the second wafer S by raising the adsorption pad 11 while it is holding the first wafer W in place. At this time, as described above, since the bonding strength at the interface between the laser absorption film P and the peeling promotion film Q has been reduced by irradiating the laser beam L, the first wafer W can be separated from the second wafer S without applying a large load.

[0042] Next, in the separated second wafer S, the surface of the separation surface, i.e., the laser absorption film P, is processed. Figure 1 (St6). In St6, for example, the surface of the laser absorption film P can be cleaned in a cleaning apparatus (not shown). Alternatively, for example, the surface of the laser absorption film P can be planarized or removed by grinding in a polishing apparatus (not shown) or an etching apparatus (not shown). In this way, a semiconductor device in which the laser absorption film P, the device layer Dw, the surface film Fw, the surface film Sw, and the device layer Ds are stacked on the surface Sa of the second wafer S is manufactured.

[0043] On the other hand, the first wafer W after separation is reused ( Figure 1 (St7). There are, for example, two modes for the reuse of the first wafer W.

[0044] like Figure 5 As shown in (a), in the first mode of the reuse process, the peeling facilitator film Q and the thermal control film R formed on the surface Wa of the first wafer W are removed. Figure 1 (St71). In St71, firstly, the release accelerator film Q is etched in an etching apparatus (not shown) to remove it. The etching of the release accelerator film Q can be either dry etching or wet etching. In the case where polysilicon is used for the release accelerator film Q, wet etching is performed, for example, using an etchant containing HF and HNO3. In this case, the release accelerator film Q has etching selectivity relative to the thermal conductivity control film R, and the release accelerator film Q is selectively etched.

[0045] In St71, the thermal conductivity control film R is then removed by etching in an etching apparatus (not shown). The etching of the thermal conductivity control film R can be either dry etching or wet etching. When a high thermal conductivity control film R1, for example, is used as the thermal conductivity control film R, it is etched by heating in a hydrogen atmosphere. When a low thermal conductivity control film R2, for example, is used as the thermal conductivity control film R, it is wet etched using an etching solution containing, for example, H3PO4 and HNO3. When a low thermal conductivity control film R2, for example, is used as the thermal conductivity control film R, it is wet etched using an etching solution containing, for example, HF, an ether-based solvent, and a Z or fluorinated ether-based solvent. Furthermore, the thermal conductivity control film R has etching selectivity relative to the first wafer W, and the thermal conductivity control film R is selectively etched.

[0046] For the first wafer W after the lift-off facilitator Q and thermal control film R have been removed in St71, the same process as in St1 is performed to form the thermal control film R, lift-off facilitator Q, laser absorption film P, device layer Dw, and surface film Fw on the surface Wa. In this way, the first wafer W is reused for the subsequent second wafer S.

[0047] Furthermore, the first wafer W after the stripping facilitator film Q and the thermal control film R are removed in St71 is a bare wafer with no film formed on its surface Wa, and therefore can be reused as a second wafer S.

[0048] like Figure 5 As shown in (b), in the second mode of the reuse process, only the peeling facilitator film Q formed on the surface Wa of the first wafer W is removed. Figure 1(St72). In St72, the same etching process as in St71 described above is performed to selectively etch the release-promoting film Q. That is, the first wafer W is reused with the thermal control film R remaining on its surface Wa. At this time, a CMP process can be performed to planarize the thermal control film R on the side adjacent to the release-promoting film Q, or etching can be performed.

[0049] For the first wafer W after the release accelerator film Q has been removed in St71, the same process as in St1 is performed to form the release accelerator film Q, the laser absorption film P, the device layer Dw, and the surface film Fw on the thermal control film R on the surface Wa. In this way, the first wafer W can be reused for the subsequent second wafer S. In St71, if the laser absorption film P is attached to the surface Wa of the first wafer W, the laser absorption film P can also be removed.

[0050] Next, in St4 above, we will explain the thermal control effect based on the thermal control film R and the effect based on the irradiation (laser treatment) of the laser beam L, namely the decrease in the bonding strength between the laser absorption film P and the peeling promotion film Q.

[0051] like Figure 3 As shown, a laser beam L is irradiated from the back side (Wb) of the first wafer W. Figure 6 The laser beam L passes through the first wafer W, the thermal control film R, and the lift-off facilitating film Q, and is absorbed by the laser absorption film P. Figure 6 St41).

[0052] The laser beam L absorbed by the laser absorption film P is converted into heat according to its energy distribution. Figure 6 (St42). In other words, the laser-absorbing film P is locally heated by absorbing the laser beam L, thus increasing the temperature of the laser-absorbing film P. Most of the heat energy generated in the laser-absorbing film P by absorbing the laser beam L is transferred to the peeling-promoting film Q (St42). Figure 6 (St43). Through heat transfer from the laser absorption film P, the temperature rises at the interface between the laser absorption film P and the peeling promotion film Q.

[0053] When the heat energy generated in the laser absorption film P is transferred to the peeling facilitating film Q, due to the influence of this heat energy, i.e., the increase in the interface temperature between the laser absorption film P and the peeling facilitating film Q, such as... Figure 7 As shown, the peeling-promoting film Q at the irradiated portion of the laser beam L expands locally according to its temperature distribution. Figure 6(St44). Specifically, the peel-promoting film Q is plastically deformed into a downwardly convex shape relative to the laser-absorbing film P. Here, the thermal expansion coefficient of the peel-promoting film Q is greater than that of the laser-absorbing film P, and also greater than that of the thermally conductive control film R. Therefore, in St44, the peel-promoting film Q expands locally.

[0054] On the other hand, the heat generated in the laser absorption film P is also transferred to the thermally conductive control film R via the peel-off promoting film Q. Figure 6 (St45). Moreover, heat transfer is controlled in the thermal control film R, which can suppress heat transfer to the first wafer W (St45). Figure 6 St46).

[0055] For example, when a high thermal conductivity control film R1 is used for the thermal conductivity control film R, the thermal conductivity of the high thermal conductivity control film R1 is higher than that of the peeling promotion film Q and also higher than that of the first wafer W. Therefore, the diffusion of heat generated in the laser absorption film P into the high thermal conductivity control film R1 can be suppressed, thereby locally heating the high thermal conductivity control film R1. As a result, heat transfer to the first wafer W can be suppressed.

[0056] Furthermore, for example, when a low thermal conductivity control film R2 is used for the thermal conductivity control film R, the thermal conductivity of the low thermal conductivity control film R2 is lower than that of the peeling promotion film Q, and also lower than that of the first wafer W. Therefore, in the laser absorption film P, heat energy is not easily transferred to the low thermal conductivity control film R2; in other words, heat energy is blocked by the low thermal conductivity control film R2. As a result, heat energy transfer to the first wafer W can be suppressed.

[0057] In St44, when the peeling-promoting film Q (and the first wafer W) expands locally, as... Figure 8 As shown, the stress σ generated by the expansion of the peel-promoting film Q causes peeling at the interface between the laser-absorbing film P (with low adhesion) and the peel-promoting film Q. Figure 6 (St47). As a result, the bonding strength between the laser absorption film P and the peeling promotion film Q decreases. Moreover, by irradiating the entire laser absorption film P with a laser beam L, as... Figure 9 As shown, the peeling is connected at the entire interface between the laser absorption film P and the peeling promotion film Q, thereby reducing the bonding strength across the entire surface of the laser absorption film P and the peeling promotion film Q.

[0058] As described above, according to this embodiment, by reducing the bonding strength between the laser absorption film P and the release facilitator film Q in St4 (St40~St47), the laser absorption film P and the release facilitator film Q (first wafer W and second wafer S) can be appropriately separated in St5. As a result, the device layer Dw formed on the first wafer W can be transferred to the second wafer S, thereby enabling the proper manufacture of a semiconductor device.

[0059] Furthermore, in this embodiment, since the first wafer W separated in St7 is reused, the cost of preparing a new first wafer W can be reduced, thereby reducing the manufacturing cost of the semiconductor device.

[0060] In this embodiment, a thermally conductive control film R is formed between the surface Wa of the first wafer W and the lift-promoting film Q. In St4, when a laser beam L is irradiated onto the laser absorption film P, the heat generated in the laser absorption film P is transferred to the thermally conductive control film R via the lift-promoting film Q. At this time, heat transfer in the thermally conductive control film R is controlled, thereby suppressing the transfer of heat energy to the first wafer W. Therefore, it is possible to suppress the formation of unevenness or depressions as defects on the surface Wa of the first wafer W, thus maintaining the surface Wa as flat. Therefore, it is not necessary to planarize the surface Wa to thin the first wafer W as in the past, and the first wafer W can be appropriately reused.

[0061] Furthermore, in this embodiment, the release accelerator film Q has etching selectivity relative to the thermal conductivity control film R, and the thermal conductivity control film R has etching selectivity relative to the first wafer W. Therefore, after selectively etching the release accelerator film Q in St71, the thermal conductivity control film R can be selectively etched. Additionally, the release accelerator film Q can also be selectively etched in St72. Thus, the first wafer W can be appropriately reused.

[0062] Furthermore, even if the release facilitator Q expands and plastically deforms in St4, the first wafer W can be appropriately reused as long as the release facilitator Q can be properly etched in St7. Therefore, in the art of this viewpoint, the following is within the scope of the claims. A method for manufacturing a semiconductor device includes the following processes: preparing an overlapping substrate formed by bonding a first substrate and a second substrate via a thermally conductive control film, a release facilitator film, and a laser absorption film; irradiating the laser absorption film with a laser; and separating the first substrate and the second substrate, wherein the thermally conductive control film, the release facilitator film, and the laser absorption film are sequentially stacked from the first substrate side, the release facilitator film having etch selectivity relative to the thermally conductive control film, and the thermal expansion coefficient of the release facilitator film being greater than that of the laser absorption film.

[0063] Furthermore, the thermal control film R can be appropriately etched in St7 if the following conditions are met: the thermal control film has etch selectivity relative to the first substrate.

[0064] Furthermore, in the above embodiments, the example described is the case where the device layer Dw formed on the surface Wa of the first wafer W is transferred to the second wafer S, that is, the entire surface of the first wafer W is separated from the second wafer S. In this respect, the technology disclosed herein can also be applied to the case where a portion of the first wafer W is separated from the second wafer S.

[0065] The embodiments disclosed herein should be considered illustrative in all respects and not restrictive. The above embodiments can be omitted, substituted, or modified in various ways without departing from the appended claims and their spirit. For example, the constituent elements of the above embodiments can be arbitrarily combined. Based on such arbitrary combinations, the functions and effects of each constituent element related to the combination can be obtained, and other functions and effects that are clearly known to those skilled in the art based on the description herein can also be obtained.

[0066] Furthermore, the effects described in this specification are merely illustrative or exemplary and not limiting. In other words, the technology disclosed herein can achieve other effects besides those described above, as clearly known to those skilled in the art based on the description, or can replace the aforementioned effects to achieve other effects clearly known to those skilled in the art based on the description.

[0067] Explanation of reference numerals in the attached figures

[0068] P: Laser absorption film; Q: Lifting facilitator film; R: Thermal control film; S: Second wafer; T: Overlapping wafer; W: First wafer.

Claims

1. A method for manufacturing a semiconductor device, comprising the following processes: Prepare an overlapping substrate formed by bonding a first substrate and a second substrate together via a thermally conductive control film, a peeling promotion film, and a laser absorption film. Irradiate the laser absorption film with laser light; and Separate the first substrate from the second substrate. in, The thermally conductive control film, the peeling promotion film, and the laser absorption film are stacked sequentially from the first substrate side. The thermal conductivity of the thermal conductivity control film is different from that of the peeling promotion film. The thermal expansion coefficient of the peeling-promoting film is greater than that of the laser-absorbing film.

2. The method for manufacturing a semiconductor device according to claim 1, wherein, When the first substrate is separated from the second substrate, the interface between the peeling facilitator film and the laser absorption film becomes the separation surface.

3. The method for manufacturing a semiconductor device according to claim 1, wherein, Includes the following processing: After separating the first substrate from the second substrate, the peeling facilitator film is removed; as well as After removing the peeling facilitator film, the thermal control film is removed.

4. The method for manufacturing a semiconductor device according to claim 1, wherein, Includes the following processing: After separating the first substrate from the second substrate, the peeling facilitator film is removed.

5. The method for manufacturing a semiconductor device according to claim 1, wherein, The thermally conductive control film has etch selectivity relative to the first substrate.

6. The method for manufacturing a semiconductor device according to claim 1, wherein, The peeling facilitator film has etch selectivity relative to the thermally conductive control film.

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