Garment finishing agent production line energy efficiency optimization method and system based on digital twinning

Abstract

The invention provides a clothing finishing agent production line energy efficiency optimization method and system based on digital twinning. According to the method, clothes surface temperature field data are captured through a thermal infrared imager, and a thermodynamic diagram marking high-temperature and low-temperature area distribution is generated through regional temperature difference analysis; a semiconductor temperature control unit is integrated in the drying box, the current flux is adjusted based on the thermodynamic diagram temperature difference, and the high-temperature area directional refrigeration and low-temperature area compensation heating effect are triggered; the temperature difference is converted into a temperature control instruction parameter to drive partition temperature control operation by applying a thermal field equalization algorithm; the current flux is dynamically corrected according to temperature field data fed back in real time, the current increase and decrease amplitude is adjusted through a two-stage control mechanism, and cooperation of continuous balance of the temperature field and energy consumption optimization of the semiconductor unit is achieved. According to the invention, the dynamic balance of the micron-order fluctuation interval of the drying temperature field is realized, the temperature difference range is reduced, the comprehensive energy consumption is reduced and the thermal damage risk of the fabric is eliminated.

Description

Technical Field

[0001] This application relates to the field of energy efficiency optimization technology for garment finishing agent production lines, and in particular to a method and system for energy efficiency optimization of garment finishing agent production lines based on digital twins. Background Technology

[0002] Modern garment finishing agent (such as waterproofing agents and flame retardants) production lines need to simultaneously meet the requirements of energy efficiency optimization for high-energy-consuming equipment (such as setting machines and ovens) and precise control of coating uniformity. Traditional energy efficiency management relies on discrete instrument monitoring and manual experience adjustments, which are insufficient to cope with high-speed dynamic production environments (such as fabric transport speeds of tens of meters per minute), multi-variable coupled interference (such as fluctuations in ambient temperature and humidity, and differences in fabric liquid absorption rates), and the need for real-time quality closed-loop control. Especially under the drive of strict environmental regulations, there is an urgent need for a technology that can simultaneously integrate energy consumption data and process parameters to achieve energy consumption anomaly tracing, equipment scheduling optimization, and quality-energy efficiency synergistic control, while ensuring micron-level finishing agent coverage uniformity.

[0003] Current targeted solutions are energy efficiency management and control systems based on lean manufacturing. These systems identify non-value-adding activities of high-energy-consuming equipment such as stenters and ovens through value stream analysis, and dynamically adjust production cycle time and equipment start-up and shutdown strategies by combining real-time monitoring and optimization of equipment energy efficiency. However, relying on a static process rule base, these systems cannot dynamically model the non-linear coupling relationship between variables such as temperature and humidity fluctuations and differences in fabric liquid absorption rates and energy consumption and quality, resulting in significant lag in optimization strategies under complex operating conditions. Summary of the Invention

[0004] This application provides a digital twin-based method and system for optimizing the energy efficiency of garment finishing agent production lines, in order to solve the problems of regional temperature control failure, global energy chain response lag, and thermal loss protection mismatch in the prior art.

[0005] In a first aspect, this application provides a method for optimizing the energy efficiency of a garment finishing agent production line based on digital twins, including: The temperature field data of the clothing surface is captured in real time by an infrared thermal imager, and the temperature field data is analyzed by regional temperature difference to generate a heat map. The heat map marks the temperature distribution difference between high temperature area and low temperature area. A semiconductor temperature control unit is integrated inside the drying oven, and the current flux of the semiconductor temperature control unit is adjusted based on the temperature distribution difference of the thermogram. The current flux triggers the directional cooling effect in the high-temperature region and the compensating heating effect in the low-temperature region to balance the overall temperature field. A thermal field equalization algorithm is constructed, and the temperature distribution difference is converted into temperature control command parameters based on the thermal field equalization algorithm to drive the semiconductor temperature control unit to perform zoned temperature control operation; The current flux of the semiconductor temperature control unit is dynamically corrected based on the real-time temperature field data fed back by the infrared thermal imager, and the increase or decrease of the current flux is adjusted through a two-stage control mechanism to achieve the synergistic goal of continuous balanced control of the temperature field and optimization of the energy consumption of the semiconductor temperature control unit.

[0006] Optionally, the current flux of the semiconductor temperature control unit is dynamically corrected based on the real-time temperature field data fed back by the infrared thermal imager, and the increase or decrease of the current flux is adjusted through a two-stage control mechanism to achieve the synergistic goal of continuous balanced temperature field control and energy consumption optimization of the semiconductor temperature control unit, including: The infrared thermal imager continuously captures temperature field data of the garment surface inside the drying oven and calculates the real-time temperature difference between the high-temperature and low-temperature regions in the temperature field data. When the real-time temperature difference value is greater than a preset threshold, the large correction phase of the two-stage control mechanism is triggered. The large correction phase combines the real-time temperature difference value with the first adjustment intensity coefficient of the two-stage control mechanism to calculate the increase in current flux. When the real-time temperature difference value is less than the preset threshold, the fine-tuning correction stage of the two-stage control mechanism is triggered. The fine-tuning correction stage combines the real-time temperature difference value with the second adjustment intensity coefficient of the two-stage control mechanism to calculate the current flux adjustment amount. The current flux increase is combined with the current flux adjustment to correct the current flux of the semiconductor temperature control unit. The semiconductor temperature control unit executes an adjusted current flux to achieve the synergistic goal of continuous temperature field balance control and semiconductor temperature control unit energy consumption optimization.

[0007] Optionally, a thermal field equalization algorithm is constructed, and the temperature distribution difference is converted into temperature control command parameters according to the thermal field equalization algorithm to drive the semiconductor temperature control unit to perform zoned temperature control operation, including: A thermal field equalization algorithm is constructed, and the temperature conversion coefficient and thermoelectric response coefficient in the thermal field equalization algorithm are extracted. The target temperature adjustment amount is calculated based on the temperature distribution difference and the thermal temperature conversion coefficient. Based on the target temperature adjustment amount and the thermoelectric response coefficient, the temperature control command parameters of the semiconductor temperature control unit are calculated. The semiconductor temperature control unit receives the temperature control command parameters to adjust the unit's operating current; Based on the adjusted unit operating current, the Peltier effect is triggered to perform zoned temperature control operations, namely directional cooling in high-temperature areas and compensatory heating in low-temperature areas.

[0008] Optionally, a semiconductor temperature control unit is integrated within the drying oven, and the current flux of the semiconductor temperature control unit is adjusted based on the temperature distribution differences in the thermogram. This current flux triggers a directional cooling effect in the high-temperature region and a compensating heating effect in the low-temperature region to balance the overall temperature field, including: A semiconductor temperature control unit is installed on the inner wall of the drying oven, and the corresponding semiconductor temperature control unit in the drying oven is matched according to the coordinate position of the high temperature area in the thermogram, so as to locate the target refrigeration execution unit of the semiconductor temperature control unit. The cooling current flux value is calculated based on the temperature values ​​of the high-temperature region in the heat map and the thermoelectric conversion coefficient of the semiconductor temperature control unit. Match the corresponding semiconductor temperature control unit based on the coordinate position of the low-temperature region in the heat map, so as to locate the target heating execution unit of the semiconductor temperature control unit; The compensation heating current flux value is calculated based on the temperature values ​​of the low-temperature region in the heat map and the thermoelectric conversion coefficient of the semiconductor temperature control unit. The cooling current flux is applied to the semiconductor temperature control unit in the high-temperature region to perform a directional cooling effect, while the heating current flux is applied to the semiconductor temperature control unit in the low-temperature region to perform a compensating heating effect.

[0009] Optionally, a cooling current flux value is applied to the semiconductor temperature control unit in the high-temperature region to perform a directional cooling effect, while a heating current flux value is applied to the semiconductor temperature control unit in the low-temperature region to perform a compensating heating effect, including: The cooling current flux value corresponding to the high temperature region is applied to the current generator, and the current generator is driven to connect to the positive and negative electrodes of the semiconductor temperature control unit in the high temperature region through wires, thereby applying the cooling current flux value to the semiconductor temperature control unit. The semiconductor temperature control unit triggers the Peltier effect under the action of the cooling current flux value, causing the cooling end of the semiconductor temperature control unit to contact the surface of the clothing, so as to generate a directional cooling effect. The heating current flux value corresponding to the low temperature region is applied to the current generator, and the current generator is driven to connect to the positive and negative electrodes of the semiconductor temperature control unit in the low temperature region through wires, so as to apply the heating current flux value to the semiconductor temperature control unit. The semiconductor temperature control unit triggers the Peltier effect under the action of the heating current flux value, causing the heating end of the semiconductor temperature control unit to contact the surface of the clothing, so as to generate a compensating heating effect.

[0010] Optionally, a semiconductor temperature control unit is installed on the inner wall of the drying oven, and the corresponding semiconductor temperature control unit inside the drying oven is matched according to the coordinate position of the high-temperature area in the thermogram to locate the target refrigeration execution unit of the semiconductor temperature control unit, including: Semiconductor temperature control units are installed on the inner wall of the drying oven according to a preset grid coordinate, and the position coordinate data of each semiconductor temperature control unit are recorded; The contour boundary of the high-temperature region in the heat map is analyzed, and the coordinates of the center point of the high-temperature region are extracted based on the contour boundary. Calculate the straight-line distance between the center point coordinates of the high-temperature region and the position coordinates of the semiconductor temperature control unit; Semiconductor temperature control units whose straight-line distance is less than a preset position matching tolerance threshold are selected, and the semiconductor temperature control units are marked as target cooling execution units.

[0011] Optionally, temperature field data of the clothing surface is captured in real time using an infrared thermal imager, and the temperature field data is analyzed by regional temperature difference to generate a heat map. The heat map marks the temperature distribution differences between high-temperature and low-temperature regions, including: The surface of the moving garment inside the drying oven is scanned by an infrared thermal imager to obtain the temperature values ​​at various points on the garment surface, and the temperature values ​​at each point are integrated to form temperature field data. The temperature field data is analyzed by regional temperature difference analysis to identify continuous location clusters where the temperature value is greater than a preset threshold, and the continuous location clusters are marked as high temperature regions. Identify consecutive location clusters where the temperature value is less than a preset threshold, and mark the consecutive location clusters as low-temperature regions; Calculate the difference in temperature values ​​between adjacent points in the temperature field data, and use the difference as the temperature distribution difference between locations; High-temperature areas are drawn with warm colors and low-temperature areas are drawn with cool colors on a preset coordinate map of the clothing surface to generate a heat map with temperature distribution differences.

[0012] Secondly, this application provides a digital twin-based energy efficiency optimization system for garment finishing agent production lines, comprising: The analysis module is used to capture temperature field data of the clothing surface in real time using an infrared thermal imager, and to perform regional temperature difference analysis on the temperature field data to generate a heat map, which marks the temperature distribution differences between high-temperature and low-temperature regions. The adjustment module is used to integrate a semiconductor temperature control unit in the drying oven and adjust the current flux of the semiconductor temperature control unit based on the temperature distribution difference of the thermogram. The current flux triggers the directional cooling effect in the high-temperature region and the compensating heating effect in the low-temperature region to balance the overall temperature field. The conversion module is used to construct a thermal field equalization algorithm and convert the temperature distribution difference into temperature control command parameters according to the thermal field equalization algorithm to drive the semiconductor temperature control unit to perform zoned temperature control operation. The correction module is used to dynamically correct the current flux of the semiconductor temperature control unit based on the real-time temperature field data fed back by the infrared thermal imager, and adjust the increase or decrease of the current flux through a two-stage control mechanism to achieve the synergistic goal of continuous balanced control of the temperature field and optimization of the energy consumption of the semiconductor temperature control unit.

[0013] Thirdly, embodiments of this application provide a computing device, including a processing component and a storage component; the storage component stores one or more computer instructions; the one or more computer instructions are invoked and executed by the processing component to implement the energy efficiency optimization method for a garment finishing agent production line based on digital twins as described in the first aspect above.

[0014] Fourthly, embodiments of this application provide a computer storage medium storing a computer program, which, when executed by a computer, implements a digital twin-based energy efficiency optimization method for garment finishing agent production lines as described in the first aspect.

[0015] In this application's technical solution, intelligent temperature equalization adjustment is achieved during the garment drying process through the coordinated control of an infrared thermal imager and a semiconductor temperature control unit. Specifically, regionalized temperature difference analysis based on thermal maps accurately identifies uneven temperature distribution; the directional cooling and compensating heating effects of the semiconductor temperature control unit significantly improve temperature field equalization efficiency; and the thermal field equalization algorithm and two-stage control mechanism achieve a dynamic balance between energy consumption optimization and temperature control accuracy. This method overcomes the uniformity control challenge of traditional drying processes, effectively solving the problems of localized overheating or insufficient drying, reducing energy consumption while ensuring drying quality, and providing a highly efficient and energy-saving temperature control solution for intelligent garment care equipment.

[0016] These or other aspects of this application will become more apparent in the following description of the embodiments. Attached Figure Description

[0017] To more clearly illustrate the technical solutions in the embodiments of this application or the prior art, the drawings used in the description of the embodiments or the prior art will be briefly introduced below. Obviously, the drawings described below are some embodiments of this application. For those skilled in the art, other drawings can be obtained based on these drawings without creative effort.

[0018] Figure 1 A flowchart of a digital twin-based energy efficiency optimization method for garment finishing agent production lines provided in this application is shown. Figure 2 A schematic diagram of the structure of a digital twin-based energy efficiency optimization system for garment finishing agent production lines provided in this application is shown. Figure 3 A schematic diagram of the structure of a computing device provided in this application is shown. Detailed Implementation

[0019] To enable those skilled in the art to better understand the present application, the technical solutions in the embodiments of the present application will be clearly and completely described below with reference to the accompanying drawings.

[0020] In some of the processes described in the specification, claims, and accompanying drawings of this application, multiple operations appearing in a specific order are included. However, it should be clearly understood that these operations may not be executed in the order they appear herein, or may be executed in parallel. The operation numbers, such as 101, 102, etc., are merely used to distinguish different operations and do not themselves represent any execution order. Furthermore, these processes may include more or fewer operations, and these operations may be executed sequentially or in parallel. It should be noted that the descriptions such as "first," "second," etc., in this document are used to distinguish different messages, devices, modules, etc., and do not represent a chronological order, nor do they limit "first" and "second" to different types.

[0021] Researchers have discovered a fundamental bottleneck in the coordinated control of energy efficiency and quality in textile finishing agent production lines: while lean manufacturing-based energy efficiency management schemes can identify non-value-adding activities of equipment, the failure of their static rule base and nonlinear coupling analysis leads to a double loss of control. Specifically, high-energy-consuming equipment such as stenters and ovens exhibit abnormal energy efficiency and delayed responses under fluctuating temperature and humidity conditions. Furthermore, differences in fabric liquid absorption rates cause both localized insufficient drying and a surge in energy consumption, resulting in severe degradation of coating uniformity. This contradiction stems from the blind spot in the dynamic decoupling of thermodynamic transfer processes and quality indicators in traditional technologies, necessitating the construction of a real-time control architecture that coordinates energy field and mass field mapping.

[0022] To address the aforementioned challenges, this invention proposes a digital twin-based energy efficiency optimization method for garment finishing agent production lines. Its innovation lies in breaking through the limitations of static energy efficiency management through dynamic temperature field analysis and closed-loop linkage with semiconductor temperature control. Specifically, an infrared thermal imager is used to capture real-time temperature field data on the fabric surface. A heat map is generated, marking the distribution of high and low temperature zones, through regionalized temperature difference analysis. Based on the temperature gradient of the heat map, the current flux of the semiconductor temperature control unit is dynamically adjusted, triggering a synergistic effect of directional cooling in high-temperature zones and compensatory heating in low-temperature zones. A unique thermal field equalization algorithm transforms temperature distribution differences into temperature control command parameters and optimizes the current flux amplitude through a two-stage control mechanism: the first stage uses a rapid response mode to eliminate core temperature differences, and the second stage switches to a fine-tuning mode to balance thermal field uniformity and semiconductor energy consumption. This method breaks through the limitations of traditional rule bases: infrared thermal field analysis achieves millisecond-level temperature mapping of the micron-level coating curing process for the first time, solving the problem of local drying runaway caused by differences in liquid absorption rate; semiconductor zone temperature control improves the drying uniformity of dark and heavy fabrics through real-time compensation of thermal field gradient; the dual-stage optimization mechanism forms a collaborative control chain of "thermal field perception - zone control - energy consumption optimization - quality feedback" by dynamically balancing the speed of temperature difference elimination and energy consumption cost, simultaneously achieving energy saving in a single drying cycle and a reduction in the standard deviation of coating uniformity.

[0023] The technical solutions of the embodiments of this application will be clearly and completely described below with reference to the accompanying drawings. Obviously, the described embodiments are only some embodiments of this application, and not all embodiments. Based on the embodiments of this application, all other embodiments obtained by those skilled in the art without creative effort are within the scope of protection of this application.

[0024] Figure 1 This application provides a flowchart of a method for optimizing the energy efficiency of a garment finishing agent production line based on digital twins, as shown in the embodiments. Figure 1 As shown, the method includes: 101. The temperature field data of the clothing surface is captured in real time by an infrared thermal imager, and the temperature field data is analyzed by regional temperature difference to generate a heat map, wherein the heat map marks the temperature distribution difference between high temperature area and low temperature area.

[0025] Optionally, step 101 may specifically include the following steps: 1011. The surface of the moving garment inside the drying oven is scanned by an infrared thermal imager to obtain the temperature values ​​at various points on the garment surface, and the temperature values ​​at each point are integrated to form temperature field data.

[0026] 1012. Perform regionalized temperature difference analysis on the temperature field data to identify continuous location clusters where the temperature value is greater than a preset threshold, and mark the continuous location clusters as high-temperature regions.

[0027] 1013. Identify a cluster of consecutive locations where the temperature value is less than a preset threshold, and mark the cluster of consecutive locations as a low-temperature region.

[0028] 1014. Calculate the temperature difference between adjacent points in the temperature field data, and use the difference as the temperature distribution difference between the locations.

[0029] 1015. On the preset coordinate map of the clothing surface, draw high-temperature areas with warm colors and low-temperature areas with cool colors to generate a heat map with temperature distribution differences.

[0030] In the above scheme, an infrared thermal imager refers to an imaging device that detects the temperature distribution on the surface of an object. Temperature field data refers to a dataset that records the temperature distribution on the surface of an object. Regionalized temperature difference analysis refers to a method for analyzing regional differences in temperature distribution. A heat map is a graphic representation of temperature distribution using color. A high-temperature region refers to a continuous region where the temperature exceeds a set threshold. A low-temperature region refers to a continuous region where the temperature is below a set threshold. Temperature distribution difference refers to the temperature difference between adjacent regions. A preset threshold is a critical value used to determine whether a temperature is high or low. A continuous cluster of location points refers to a set of spatially adjacent temperature feature points. A clothing surface coordinate map is a reference map used to mark the location of clothing surfaces. Warm colors refer to red tones representing high temperatures. Cool colors refer to blue tones representing low temperatures.

[0031] In this embodiment, firstly, through step 1011, the system uses an infrared thermal imager (wavelength range can be 8~14μm, thermal sensitivity ≤0.05°C) to dynamically scan the moving garment surface inside the drying oven. The optical sensor array of the infrared thermal imager captures the infrared radiation energy at each location point on the garment surface in a line-by-line scanning manner. The radiation energy is converted into an electrical signal by a thermoelectric conversion module, and then the electrical signal is quantized into a specific temperature value by a temperature calibration algorithm (based on the blackbody radiation law and preset emissivity parameters). The temperature values ​​of all locations are integrated into a two-dimensional matrix according to the spatial coordinate mapping relationship, forming temperature field data covering the entire surface of the garment. This data includes the temperature value and spatial distribution topology of each coordinate point.

[0032] Subsequently, in step 1012, the system performs regionalized temperature difference analysis on the temperature field data: based on a preset threshold (for example, the preset threshold can be 45°C, set by the heat resistance of the clothing material), a connected component labeling algorithm is used to scan the temperature field matrix and identify clusters of adjacent points with temperature values ​​greater than the threshold. Each cluster must meet the spatial continuity condition (i.e., the distance between points is less than the resolution of the thermal imager), and the system extracts and marks its boundary coordinates as high-temperature areas (such as local overheating areas caused by insufficient drying), while recording the extreme and average temperatures within the area.

[0033] Next, in step 1013, the system reuses the regionalized temperature difference analysis process to reverse-filter clusters of adjacent locations whose temperature values ​​are less than another preset threshold. Through spatial clustering analysis (such as breadth-first search based on eight-neighborhood connections), the geometric contours and center coordinates of the low-temperature point clusters are extracted and marked as low-temperature regions (such as areas with insufficient hot air penetration or heat dissipation lag caused by dense fibers). This step shares the same analysis engine as step 1012, only switching the threshold direction to achieve symmetrical recognition.

[0034] Then, in step 1014, the system calculates the temperature difference between all adjacent points in the temperature field data (defined according to the spatial coordinate adjacency relationship). A gradient operator (such as a temperature field variant of the Sobel edge detection algorithm) is used to traverse the matrix, performing temperature difference calculations on each point and its surrounding points (up, down, left, and right) to generate a matrix of temperature distribution differences between locations. This matrix quantifies the intensity of local temperature abrupt changes (such as a steep transition from a high-temperature region to a low-temperature region), providing a data foundation for spatial gradient visualization of the heatmap.

[0035] Finally, in step 1015, the system maps the coordinates of the high-temperature areas to a preset garment surface coordinate map (a digital garment template aligned with the infrared scanning coordinates), and fills the high-temperature areas with a warm-tonal rendering engine (such as a red-yellow spectrum); simultaneously, it fills the low-temperature areas with cool-tonal colors (such as a blue-cyan spectrum). Based on the temperature distribution difference matrix between locations, a color gradient interpolation algorithm (such as bilinear interpolation) is superimposed at the boundaries of the regions, making the width of the transition band between warm and cool colors positively correlated with the temperature difference value, ultimately synthesizing a heat map that intuitively displays the temperature distribution differences. This map can be directly used for drying process adjustment or defect diagnosis.

[0036] In practical applications, in the digital twin system of the intelligent drying production line, the system uses an infrared thermal imager deployed on the top of the drying box to scan the surface of the moving garment inside the drying box in real time (the garment passes through the drying zone at a uniform speed in a suspended state) to obtain the temperature values ​​of various points on the surface of the garment (such as the temperature points of key parts such as collar, cuffs, and hem). The temperature values ​​of tens of thousands of points collected every second are integrated according to spatial topological relationships to form temperature field data (this data maps the temperature distribution of the entire surface of the garment).

[0037] The digital twin platform performs regionalized temperature difference analysis on the temperature field data (the analysis algorithm is based on temperature gradient clustering). First, it identifies consecutive clusters of points with temperatures exceeding a preset threshold (such as high-temperature clusters formed under the armpit of clothing due to fabric thickening) and marks these clusters as high-temperature regions. Simultaneously, it identifies consecutive clusters of points with temperatures below the preset threshold (such as low-temperature zones formed on the front of clothing due to hot air blockage) and marks these clusters as low-temperature regions. To quantify the non-uniformity of the thermal field, the system calculates the temperature difference between adjacent points in the temperature field data (such as the temperature gradient between the high-temperature area under the armpit and the adjacent side seam area) and uses this difference as the temperature distribution difference between locations.

[0038] Finally, the system plots high-temperature areas (red representing high-temperature clusters under the armpits) and low-temperature areas (blue representing low-temperature clusters at the front) on a pre-defined coordinate map of the garment surface (mapped 1:1 to the garment's physical dimensions), generating a heat map with temperature distribution differences. This heat map is projected in real-time onto a virtual production line model via a digital twin platform, driving the drying fans to adjust the angle and speed of the hot air nozzles. For example, the air temperature is lowered and the dwell time is extended for the high-temperature areas under the armpits, while directional hot air compensation is added for the low-temperature areas at the front. This eliminates drying blind spots, reduces ineffective energy consumption, and meets the process standards for the uniform curing of textile finishing agents.

[0039] The overall solution in step 101 above achieves accurate detection and visual analysis of the temperature field on the garment surface. Infrared thermal imaging technology is used to capture real-time temperature distribution data on the garment surface during the drying process, and a regionalized temperature difference analysis algorithm is employed to identify high-temperature and low-temperature areas. Innovatively, temperature differences are transformed into an intuitive thermal map, with warm and cool colors used to mark abnormal temperature areas, providing a high-resolution temperature field distribution basis for subsequent precise temperature control and overcoming the limitations of traditional single-point temperature measurement.

[0040] 102. A semiconductor temperature control unit is integrated in the drying oven, and the current flux of the semiconductor temperature control unit is adjusted based on the temperature distribution difference of the thermogram. The current flux triggers the directional cooling effect in the high-temperature region and the compensating heating effect in the low-temperature region to balance the overall temperature field.

[0041] Optionally, step 102 may specifically include the following steps: 1021. Install a semiconductor temperature control unit on the inner wall of the drying oven, and match the corresponding semiconductor temperature control unit in the drying oven according to the coordinate position of the high temperature area in the thermogram, so as to locate the target refrigeration execution unit of the semiconductor temperature control unit.

[0042] Step 1021 may specifically include the following processes: installing semiconductor temperature control units on the inner wall of the drying oven according to a preset grid coordinate, and recording the position coordinate data of each semiconductor temperature control unit; parsing the contour boundary of the high-temperature area in the thermogram, and extracting the center point coordinates of the high-temperature area based on the contour boundary; calculating the straight-line distance between the center point coordinates of the high-temperature area and the position coordinates of the semiconductor temperature control unit; filtering semiconductor temperature control units whose straight-line distance is less than a preset position matching tolerance threshold, and marking the semiconductor temperature control unit as the target refrigeration execution unit.

[0043] 1022. Based on the temperature values ​​of the high-temperature regions in the heat map and in conjunction with the thermoelectric conversion coefficient of the semiconductor temperature control unit, the cooling current flux value is calculated.

[0044] 1023. Match the corresponding semiconductor temperature control unit according to the coordinate position of the low temperature area in the heat map, so as to locate the target heating execution unit of the semiconductor temperature control unit.

[0045] 1024. Based on the temperature values ​​of the low-temperature region in the heat map and in combination with the thermoelectric conversion coefficient of the semiconductor temperature control unit, the compensation heating current flux value is calculated.

[0046] 1025. Apply the cooling current flux value to the semiconductor temperature control unit in the high-temperature region to perform a directional cooling effect, and at the same time apply the heating current flux value to the semiconductor temperature control unit in the low-temperature region to perform a compensating heating effect.

[0047] Step 1025 may specifically include the following processes: A cooling current flux value corresponding to the high-temperature region is applied to a current generator, and the current generator is driven to connect the positive and negative electrodes of the semiconductor temperature control unit in the high-temperature region via wires, thus applying the cooling current flux value to the semiconductor temperature control unit; under the action of the cooling current flux value, the semiconductor temperature control unit triggers the Peltier effect, causing the cooling end of the semiconductor temperature control unit to contact the clothing surface to generate a directional cooling effect; A heating current flux value corresponding to the low-temperature region is applied to a current generator, and the current generator is driven to connect the positive and negative electrodes of the semiconductor temperature control unit in the low-temperature region via wires, thus applying the heating current flux value to the semiconductor temperature control unit; under the action of the heating current flux value, the semiconductor temperature control unit triggers the Peltier effect, causing the heating end of the semiconductor temperature control unit to contact the clothing surface to generate a compensating heating effect.

[0048] In the above scheme, a semiconductor temperature control unit refers to a device that uses the thermoelectric effect of semiconductors to achieve temperature regulation. Current flux refers to the amount of charge passing through a conductor per unit time. Directional cooling effect refers to the cooling effect targeted at a specific area. Compensating heating effect refers to the heating effect targeted at a specific area. Temperature field refers to the temperature distribution in space. Preset grid coordinates refer to the pre-divided coordinate grid within the drying oven. Position coordinate data refers to the spatial position information of the semiconductor temperature control unit. Contour boundary refers to the shape boundary line of the high-temperature area. Center point coordinates refer to the geometric center position of the high-temperature area. Straight-line distance refers to the shortest distance between two points. Position matching tolerance threshold refers to the maximum allowable error range for position matching. Thermoelectric conversion coefficient refers to the thermoelectric conversion efficiency parameter of the semiconductor material. Cooling current flux value refers to the amount of current used for cooling. Heating current flux value refers to the amount of current used for heating. Current generator refers to an electronic device that generates controllable current. Wire refers to a conductor used to transmit current. Positive and negative electrodes refer to the power interface of the semiconductor temperature control unit. Peltier effect refers to the cooling or heating effect generated when current passes through a semiconductor. The cooling end refers to the cooling contact surface of the semiconductor temperature control unit. The heating end refers to the heating contact surface of the semiconductor temperature control unit.

[0049] In this embodiment, firstly, through step 1021, the system installs an array of semiconductor temperature control units (each unit contains an independent semiconductor cooling chip and heat dissipation structure) on the inner wall of the drying oven according to a preset grid coordinate, and records the three-dimensional position coordinate data of each unit (such as the coordinates of the grid intersection). Subsequently, the system analyzes the high-temperature region contour boundary in the heat map (generated in step 101) (extracting the geometric contour of the temperature anomaly area using an edge detection algorithm), and calculates the coordinates of the center point of the contour (using a centroid algorithm to obtain the centroid of the boundary polygon). Next, the system calculates the straight-line distance (Euclidean distance formula) between the coordinates of each semiconductor temperature control unit and the center point coordinates of the high-temperature region, and filters all units whose distance is less than the position matching tolerance threshold, marking them as target cooling execution units. This process achieves accurate spatial mapping between the heat map anomaly area and the physical execution unit.

[0050] Subsequently, in step 1022, the system extracts the temperature values ​​of the high-temperature regions in the thermal map (specific temperature values ​​exceeding the preset threshold), and combines this with the thermoelectric conversion coefficient of the semiconductor temperature control unit (determined by device characteristics, the cooling power per unit current). The current calculation engine divides the temperature difference (high-temperature value - target temperature) by the thermoelectric conversion coefficient to generate the cooling current flux value. This process ensures that the current intensity is strictly matched with the temperature deviation, avoiding overcooling or insufficient cooling.

[0051] Next, in step 1023, the system reuses the coordinate mapping logic from step 1021: it analyzes the low-temperature region outline boundary of the heat map, extracts its center point coordinates, calculates the straight-line distance to the semiconductor temperature control unit, and selects units with a distance less than the tolerance threshold as target heating execution units. This step is symmetrical to the positioning of the cooling unit, but it targets the low-temperature abnormal area.

[0052] Then, in step 1024, the system extracts the temperature values ​​of the low-temperature region from the thermal map and combines them with the thermoelectric conversion coefficient of the semiconductor temperature control unit (the thermal efficiency of the reverse current needs to be considered in the heating mode). The current calculation engine divides the temperature difference between the target temperature and the low-temperature value by the thermoelectric conversion coefficient to generate a compensated heating current flux value. This process is independent of the cooling calculation and adapts to the electrical characteristics of the heating operation.

[0053] Finally, in step 1025, the system inputs the cooling current flux value into the current generator, which connects to the electrodes of the semiconductor temperature control unit in the high-temperature region via wires (positive and negative terminals connected in the cooling direction). This drives the unit to generate the Peltier effect: the current causes the cold end to approach the clothing surface and absorb heat, achieving a directional cooling effect. Simultaneously, the heating current flux value is input into another current generator, connected in reverse to the electrodes of the semiconductor temperature control unit in the low-temperature region (positive and negative terminals reversed). This drives the unit to generate the reverse Peltier effect: the current causes the hot end to approach the clothing surface and release heat, achieving a compensating heating effect. This bidirectional temperature control works synergistically to eliminate temperature distribution differences in the thermogram, resulting in a more balanced overall temperature field.

[0054] In practical applications, within the digital twin system for denim drying processes, semiconductor temperature control units are installed on the inner wall of the drying chamber according to a preset grid coordinate system (the spacing between units covers the maximum width of the denim fabric), and the position coordinate data of each unit is recorded. When the thermal image generated by the infrared thermal imager shows a high-temperature area at the seam of the trouser leg due to fabric thickening, the system analyzes the outline boundary of the high-temperature area in the thermal image, extracts its center point coordinates, calculates the straight-line distance between this center point coordinates and the position coordinates of all semiconductor temperature control units, and filters out units whose straight-line distance is less than a preset position matching tolerance threshold (such as the three closest units), marking them as target cooling execution units. Based on the temperature value of the high-temperature area in the thermal image (significantly higher than the baseline value), combined with the thermoelectric conversion coefficient of the semiconductor temperature control unit (this coefficient is specified by the equipment manufacturer), the system calculates the cooling current flux value.

[0055] Simultaneously, targeting the low-temperature area at the hem of the trousers caused by hot air blockage, the system matches the corresponding semiconductor temperature control unit based on the coordinates of the low-temperature area in the thermal map (also filtered by the straight-line distance between the center point coordinates and the unit position), locates the target heating execution unit, and calculates the compensation heating current flux value based on the temperature value of the low-temperature area and the thermoelectric conversion coefficient. During the execution phase, the system loads the cooling current flux value corresponding to the high-temperature area onto the current generator, driving the current generator to connect to the positive and negative electrodes of the target cooling execution unit through wires, loading the cooling current flux value onto the unit; at this time, the semiconductor temperature control unit triggers the Peltier effect, and its cooling end contacts the denim surface to generate a directional cooling effect, quickly neutralizing the overheating at the seam.

[0056] Simultaneously, the heating current flux value corresponding to the low-temperature region is applied to the current generator, driving the current generator to connect to the positive and negative electrodes of the target heating execution unit, and applying the heating current flux value; the semiconductor temperature control unit triggers the Peltier effect, and its heating end contacts the denim surface to generate a compensating heating effect, compensating for the low-temperature region at the hem. Through bidirectional regulation, the temperature field on the denim surface achieves dynamic balance, avoiding fiber embrittlement (seam) caused by local overheating in traditional drying or insufficient curing of finishing agents (hem) caused by local undercooling, thus meeting the process standards for uniform drying of denim garments.

[0057] The overall solution in step 102 above achieves intelligent zoned temperature control in the garment drying process. Based on the results of thermographic analysis, an innovative current regulation mechanism for the semiconductor temperature control unit is designed, utilizing the Peltier effect to achieve directional cooling in high-temperature areas and compensatory heating in low-temperature areas. This technology can accurately match the execution unit according to the coordinate position of abnormal temperature areas and calculate the optimal current flux value, realizing dynamic balance regulation of the temperature field inside the drying oven and significantly improving the accuracy of temperature control.

[0058] 103. Construct a thermal field equalization algorithm, and convert the temperature distribution difference into temperature control command parameters according to the thermal field equalization algorithm to drive the semiconductor temperature control unit to perform zoned temperature control operation.

[0059] Optionally, step 103 may specifically include the following steps: 1031. Construct a thermal field equilibrium algorithm and extract the temperature conversion coefficient and thermoelectric response coefficient from the thermal field equilibrium algorithm.

[0060] 1032. Calculate the target temperature adjustment amount based on the temperature distribution difference and the thermal temperature conversion coefficient.

[0061] 1033. Calculate the temperature control command parameters of the semiconductor temperature control unit based on the target temperature adjustment amount and the thermoelectric response coefficient.

[0062] 1034. The semiconductor temperature control unit receives the temperature control command parameters to adjust the unit's operating current.

[0063] 1035. Based on the adjusted unit operating current, the Peltier effect is triggered to perform zoned temperature control operation for directional cooling in high-temperature areas and compensating heating in low-temperature areas.

[0064] In the above scheme, the thermal field equalization algorithm refers to the algorithm used to balance the temperature field distribution. The temperature conversion coefficient is the proportional parameter that converts temperature differences into adjustment amounts. The thermoelectric response coefficient is the response parameter of the semiconductor temperature control unit to temperature changes. The target temperature adjustment amount is the temperature value that needs to be adjusted. The temperature control command parameters are the parameters that control the operation of the semiconductor temperature control unit. The unit operating current is the operating current value of the semiconductor temperature control unit. Zoned temperature control operation refers to the operation of independently controlling the temperature of different areas.

[0065] In this embodiment, firstly, through step 1031, the system constructs a thermal field equalization algorithm: based on the thermodynamic equilibrium stability principle (entropy criterion and Gibbs criterion), the intrinsic parameters of the semiconductor material are obtained through thermoelectric characteristic calibration experiments. During the experiment, the system applies a stepped current to the semiconductor temperature control unit, simultaneously monitoring its hot and cold end temperature response curves. The temperature conversion coefficient (characterizing current-to-temperature conversion efficiency) and thermoelectric response coefficient (characterizing the hysteresis characteristics of temperature regulation) are extracted from the curves using a least-squares fitting algorithm. These two coefficients are stored as the core control parameters of the algorithm, used to quantify the dynamic relationship between current input and temperature output.

[0066] Subsequently, in step 1032, the system calls the temperature distribution difference data (temperature deviation values ​​between the high-temperature and low-temperature zones) generated in step 102 and performs mapping calculations using the temperature conversion coefficient: the temperature deviation value is multiplied by the temperature conversion coefficient, and the target temperature adjustment amount is directly output. For example, if the high-temperature zone needs to be cooled by 5℃, and the temperature conversion coefficient is 0.8℃ / A, then the target temperature adjustment amount is 4A·℃. This process is implemented through a linear scaling engine to ensure the physical conversion of temperature difference into electrical adjustment amount.

[0067] Next, in step 1033, the system inputs the target temperature adjustment amount into the thermoelectric dynamic compensation model. This model introduces the thermoelectric response coefficient to correct the response delay of the semiconductor unit: the target temperature adjustment amount is divided by the thermoelectric response coefficient to generate transient temperature control command parameters (e.g., the current amplitude can be 10A and the duration can be 3s). This process uses a feedforward compensation algorithm to offset the time lag effect of the semiconductor material, ensuring that the temperature control command matches the real-time thermal field requirements.

[0068] Then, in step 1034, the system converts the temperature control command parameters into drive signals through a current controller (such as a PID controller). The controller parses the current amplitude and duration in the command parameters and outputs directional current pulses to the designated semiconductor temperature control unit through an H-bridge circuit. The current direction is set according to the temperature control requirements: a negative current is applied to activate the cooling end in the high-temperature region, and a positive current is applied to activate the heating end in the low-temperature region, realizing controllable switching of current polarity.

[0069] Finally, through step 1035, the semiconductor temperature control unit triggers the Peltier effect after receiving the regulated unit operating current: the negative current causes the cold end of the unit to approach the high-temperature region to absorb heat, producing a directional cooling effect; the positive current causes the hot end of the unit to approach the low-temperature region to release heat, producing a compensating heating effect. The bidirectional temperature control synchronization eliminates the original temperature distribution differences, bringing the overall thermal field to a balanced state.

[0070] In practical applications, within the digital twin system for denim drying processes, the system first constructs a thermal field equalization algorithm (which integrates a heat transfer model and thermoelectric conversion rules), and extracts the temperature conversion coefficient and thermoelectric response coefficient from the algorithm (the temperature conversion coefficient is calibrated by the material's thermal conductivity, and the thermoelectric response coefficient is determined experimentally by the thermoelectric performance of the semiconductor unit). Based on the temperature distribution differences generated by the infrared thermal imager (such as the temperature gradient between the high-temperature zone at the seam of the denim trouser leg and the low-temperature zone at the hem), combined with the temperature conversion coefficient (quantifying the mapping relationship between temperature difference and thermal regulation), the system calculates the target temperature regulation amount (e.g., the amount of cooling regulation required at the seam and the amount of heating regulation required at the hem).

[0071] Subsequently, based on the target temperature adjustment and the thermoelectric response coefficient (describing the current-to-heat conversion efficiency of the semiconductor unit), the system calculates the temperature control command parameters for the semiconductor temperature control unit (e.g., the cooling command parameter for the seam is a negative current intensity, and the heating command parameter for the hem is a positive current intensity). The semiconductor temperature control unit receives the temperature control command parameters (the parameters are sent to the current controller via the digital twin platform) and adjusts the unit's operating current.

[0072] Ultimately, based on the adjusted unit operating current, the Peltier effect is triggered: in the high-temperature zone at the seam, the current direction drives the cold end of the semiconductor unit to contact the fabric surface for directional cooling; in the low-temperature zone at the hem, the reverse current drives the hot end to contact the fabric surface for compensatory heating, achieving zoned temperature control. Through this process, localized overheating (leading to fiber embrittlement) and localized undercooling (leading to insufficient curing of finishing agents) during the denim drying process are dynamically neutralized, improving the uniformity of the temperature field. Simultaneously, it avoids the energy waste of traditional uniform temperature control, meeting both the quality and energy efficiency standards for denim garment drying.

[0073] The overall solution in step 103 above achieves intelligent algorithmic control for temperature field equalization. By constructing a thermal field equalization algorithm, temperature distribution differences are quantified into executable temperature control command parameters. An innovative dual calculation model of temperature conversion coefficient and thermoelectric response coefficient is introduced, realizing closed-loop control from temperature difference detection to semiconductor unit current adjustment. This provides an adaptive zoned temperature control solution for the drying process, ensuring rapid response and stability of temperature regulation.

[0074] 104. The current flux of the semiconductor temperature control unit is dynamically corrected based on the real-time temperature field data fed back by the infrared thermal imager, and the increase or decrease of the current flux is adjusted through a two-stage control mechanism to achieve the synergistic goal of continuous balanced control of the temperature field and optimization of the energy consumption of the semiconductor temperature control unit.

[0075] Optionally, step 104 may specifically include the following steps: 1041. The infrared thermal imager is used to continuously capture temperature field data of the surface of clothing inside the drying oven, and the real-time temperature difference between the high-temperature region and the low-temperature region in the temperature field data is calculated.

[0076] 1042. When the real-time temperature difference value is greater than a preset threshold, a large correction phase of the two-stage control mechanism is triggered. The large correction phase combines the real-time temperature difference value with the first adjustment intensity coefficient of the two-stage control mechanism to calculate the increase in current flux.

[0077] 1043. When the real-time temperature difference value is less than the preset threshold, the fine-tuning correction stage of the two-stage control mechanism is triggered. The fine-tuning correction stage combines the real-time temperature difference value with the second adjustment intensity coefficient of the two-stage control mechanism to calculate the current flux adjustment amount.

[0078] 1044. The current flux increase is combined with the current flux adjustment to correct the current flux of the semiconductor temperature control unit.

[0079] 1045. The semiconductor temperature control unit executes the adjusted current flux to achieve the synergistic goal of continuous temperature field balance control and semiconductor temperature control unit energy consumption optimization.

[0080] In the above scheme, the two-stage control mechanism refers to a two-stage control method that includes large-scale correction and fine-tuning correction. Current flux refers to the amount of charge passing through a conductor per unit time. Continuous temperature field equilibrium control refers to the control process that maintains the dynamic equilibrium of the temperature field. Energy consumption optimization refers to the optimization goal of reducing energy consumption. Real-time temperature difference refers to the temperature difference between the current high-temperature region and the low-temperature region. Preset threshold refers to the critical temperature difference value that triggers the switching of the control mechanism. The large-scale correction stage refers to the rapid adjustment stage when the temperature difference is large. The first adjustment intensity coefficient refers to the adjustment ratio parameter of the large-scale correction stage. The increase in current flux refers to the amount of current that needs to be increased. The fine-tuning correction stage refers to the fine adjustment stage when the temperature difference is small. The second adjustment intensity coefficient refers to the adjustment ratio parameter of the fine-tuning correction stage. The current flux adjustment amount refers to the amount of current that needs to be adjusted. The synergistic goal refers to simultaneously achieving the dual goals of temperature equilibrium and energy consumption optimization.

[0081] In this embodiment, firstly, through step 1041, the system uses an infrared thermal imager to periodically scan the surface of the clothing inside the drying oven (e.g., 5 frames per second), capturing the temperature value of each pixel in each frame in real time, and integrating it into dynamically updated temperature field data. Through a regional temperature difference calculation engine, the system segments high-temperature and low-temperature regions in real time (automatically divided based on a preset temperature threshold) and calculates the difference in average temperature between the two regions, generating a real-time temperature difference value. This value reflects the temperature field uniformity, providing a real-time input source for subsequent control.

[0082] Subsequently, in step 1042, when the real-time temperature difference exceeds a preset threshold, the system triggers a significant correction phase of the two-stage control mechanism. This phase calls upon a pre-stored first adjustment intensity coefficient (calibrated from the semiconductor thermoelectric response characteristics, representing the current increment required per unit temperature difference), multiplies the real-time temperature difference by this coefficient, and directly outputs the increase in current flux. For example, at a temperature difference of 15°C, if the coefficient is 0.1A / °C, the current increase is 1.5A. This process employs an open-loop proportional control algorithm to rapidly increase cooling / heating power to reduce significant temperature differences.

[0083] Next, in step 1043, when the real-time temperature difference value is lower than the preset threshold, the system switches to the fine-tuning correction stage of the two-stage control mechanism. This stage uses a smaller second adjustment intensity coefficient (approximately 1 / 5 of the first coefficient to avoid over-adjustment) and calculates the current flux adjustment amount based on the real-time temperature difference value. This process introduces a PID feedback algorithm: the real-time temperature difference serves as the deviation input, the coefficient serves as the proportional gain, and the output is superimposed with historical accumulated error terms to generate a fine adjustment amount, achieving energy consumption optimization when the temperature field approaches equilibrium.

[0084] Then, in step 1044, the system inputs the increase in current flux output from the large correction stage and the adjustment of current flux output from the fine-tuning correction stage into the current synthesis module. This module assigns weights according to the priority of the control stages (the large correction result overrides the fine-tuning result), and finally generates a unified current flux correction command. The command is converted into an analog signal by a digital-to-analog converter, and the drive current value of the semiconductor temperature control unit is updated in real time to ensure that the current change strictly matches the temperature difference state.

[0085] In practical applications, in the digital twin system of the outdoor jacket finishing agent drying production line, the system continuously captures the temperature field data of the garment surface inside the drying box using an infrared thermal imager (the thermal imager scans the moving surface of the jacket at a fixed frequency), analyzes the temperature field data distribution differences between the waterproof coating area (high temperature area) and the seam sealing area (low temperature area) of the jacket in real time, and calculates the real-time temperature difference between the high temperature area and the low temperature area in the temperature field data (such as the coating area, which is prone to heat storage due to its high infrared reflectivity, forming a temperature difference peak).

[0086] When the real-time temperature difference exceeds a preset threshold (e.g., a sudden increase in temperature difference between the coating and adhesive bonding areas), the system triggers a significant correction phase of the two-stage control mechanism. This phase combines the real-time temperature difference with a pre-calibrated first adjustment intensity coefficient (corresponding to rapid temperature change requirements) to calculate the increase in current flux (e.g., increasing the heating current flux of the semiconductor unit in the seam area to quickly compensate for the low-temperature zone). When the real-time temperature difference is less than a preset threshold (e.g., the steady-state temperature difference after the overheating risk in the coating area has been eliminated), the system triggers a fine-tuning correction phase of the two-stage control mechanism. This phase combines the real-time temperature difference with a second adjustment intensity coefficient (corresponding to fine-tuning energy consumption), to calculate the adjustment in current flux (e.g., fine-tuning the cooling current flux in the coating area to maintain balance and reduce energy consumption). The system then combines the increase in current flux with the adjustment in current flux (dynamically superimposing the output values ​​from both stages) to correct the current flux of the semiconductor temperature control unit.

[0087] Ultimately, the semiconductor temperature control unit executes the adjusted current flux: forming a dynamically balanced temperature field on the surface of the jacket, which eliminates the volatilization of the finishing agent caused by local overheating of the waterproof coating (by rapidly suppressing the temperature difference through the large correction stage), and avoids energy waste caused by continuous strong heating in the seam sealing area (by maintaining the minimum necessary current through the fine-tuning correction stage). This achieves the synergistic goal of continuous balanced temperature field control and energy consumption optimization of the semiconductor temperature control unit, while meeting the dual requirements of heat resistance of the waterproof coating and seam strength of the jacket.

[0088] The overall solution described in step 104 achieves dynamic optimization and energy management of the temperature control system. It employs a combination of real-time feedback from an infrared thermal imager and a two-stage control mechanism, intelligently selecting the adjustment range based on the temperature difference. Through the synergistic effect of large-scale correction and fine-tuning correction, this technology optimizes the energy consumption performance of the semiconductor unit while ensuring a continuously balanced temperature field, achieving a dual improvement in temperature control accuracy and energy efficiency ratio, and providing a sustainable operating solution for the intelligent drying system.

[0089] Here are specific examples of steps 101 to 105: In the digital twin system for the drying process of radiation-proof workwear, the system uses an infrared thermal imager to capture the moving surface of the garment (a radiation-proof workwear containing metal fibers passing through at a uniform speed) in real time within the drying chamber. It obtains temperature values ​​at various points on the garment surface (such as underarms and shoulders in areas with dense metal fibers), and integrates the temperature values ​​of tens of thousands of points according to spatial topological relationships to form temperature field data. The temperature field data undergoes regionalized temperature difference analysis (based on gradient clustering). Clusters of consecutive points with temperatures exceeding a preset threshold (high-temperature clusters formed in metal fiber areas due to rapid heat conduction) are identified and marked as high-temperature regions. Simultaneously, clusters of consecutive points with temperatures below the preset threshold (low-temperature zones formed in ordinary fabric areas due to insulation) are identified and marked as low-temperature regions. The temperature difference between adjacent points is calculated (such as the temperature jump between the high-temperature area under the armpit and the ordinary fabric area at the side waist) as the temperature distribution difference between locations. Finally, on a preset garment surface coordinate map (1:1 mapping of the workwear's physical dimensions), high-temperature regions are drawn in warm colors (red series), and low-temperature regions are drawn in cool colors (blue series), generating a heat map with temperature distribution differences.

[0090] Based on the temperature distribution differences in the heat map, the system installs semiconductor temperature control units on the inner wall of the drying oven according to a preset grid coordinate system, and records the position coordinate data of each semiconductor temperature control unit. The system analyzes the contour boundary of the high-temperature region in the heat map, extracts the coordinates of the center point of the high-temperature region, calculates the straight-line distance between the center point coordinates and the position coordinates of the semiconductor temperature control unit, and filters out units whose straight-line distance is less than a preset position matching tolerance threshold (the three closest units), marking them as target cooling execution units. Based on the temperature values ​​of the high-temperature regions in the heat map (significantly higher than the baseline value) combined with the thermoelectric conversion coefficient of the semiconductor temperature control unit (as specified by the equipment manufacturer), the cooling current flux value is calculated. Simultaneously, for the coordinate positions of the low-temperature regions, corresponding semiconductor temperature control units are matched (also filtered by center point coordinate distance), locating the target heating execution unit, and the compensation heating current flux value is calculated based on the temperature values ​​of the low-temperature regions combined with the thermoelectric conversion coefficient. During the execution phase, a cooling current flux value is applied to the current generator, which is then connected to the positive and negative electrodes of the target cooling execution unit via wires, thus applying the cooling current flux value to the semiconductor temperature control unit. At this time, the semiconductor temperature control unit triggers the Peltier effect, and its cooling end contacts the tooling surface to generate a directional cooling effect. Simultaneously, a heating current flux value is applied to the current generator, which is then connected to the positive and negative electrodes of the target heating execution unit, applying the heating current flux value. The semiconductor temperature control unit triggers the Peltier effect, and its heating end contacts the tooling surface to generate a compensating heating effect.

[0091] To achieve precise control, the system constructs a thermal field equalization algorithm, extracting the temperature conversion coefficient and thermoelectric response coefficient (the coefficients are calibrated by material thermal conductivity experiments). Based on the temperature distribution difference (temperature gradient between the high-temperature area under the armpit and the low-temperature area on the side waist) combined with the temperature conversion coefficient, the target temperature adjustment amount (the amount of cooling required under the armpit and the amount of compensation required on the side waist) is calculated. According to the target temperature adjustment amount and the thermoelectric response coefficient, the temperature control command parameters of the semiconductor temperature control unit (such as the negative current parameter of the underarm unit) are calculated. The semiconductor temperature control unit receives the temperature control command parameters (issued through the digital twin platform), adjusts the unit's operating current, and triggers the Peltier effect based on the adjusted unit operating current, performing directional cooling under the armpit and compensating heating on the side waist, completing the zoned temperature control operation.

[0092] To continuously optimize energy efficiency, the system continuously captures temperature field data of the clothing surface inside the drying oven using an infrared thermal imager, calculating the real-time temperature difference between high-temperature and low-temperature areas. When the real-time temperature difference exceeds a preset threshold (e.g., a sudden overheating in the metal fiber area), a large-scale correction phase of the two-stage control mechanism is triggered. This phase combines the real-time temperature difference with a first adjustment intensity coefficient (corresponding to rapid intervention needs) to calculate the increase in current flux (e.g., a sudden increase in underarm cooling current flux). When the real-time temperature difference is less than the preset threshold (entering steady state), a fine-tuning correction phase is triggered. This phase combines the real-time temperature difference with a second adjustment intensity coefficient (corresponding to fine-tuning) to calculate the adjustment in current flux (e.g., fine-tuning the side waist heating current). The system combines the increase in current flux with the adjustment in current flux to correct the current flux of the semiconductor temperature control unit (step 7). Ultimately, the semiconductor temperature control unit executes the adjusted current flux to achieve continuous and balanced control of the surface temperature field of the radiation protection tooling (eliminating the risk of delamination caused by overheating of metal fibers). At the same time, the dynamic correction of the current flux avoids ineffective energy consumption in the ordinary fabric area, achieving the synergistic goal of optimizing the energy consumption of the semiconductor temperature control unit and meeting the requirements for the functional durability and thermal stability of the radiation protection tooling.

[0093] Figure 2 This application provides a schematic diagram of the structure of a digital twin-based energy efficiency optimization system for garment finishing agent production lines, as shown in the embodiment of the present application. Figure 2 As shown, the system includes: The analysis module 21 is used to capture temperature field data of the clothing surface in real time through an infrared thermal imager, and perform regional temperature difference analysis on the temperature field data to generate a heat map, wherein the heat map marks the temperature distribution difference between high temperature area and low temperature area. The adjustment module 22 is used to integrate a semiconductor temperature control unit in the drying oven and adjust the current flux of the semiconductor temperature control unit based on the temperature distribution difference of the thermogram. The current flux triggers the directional cooling effect in the high temperature region and the compensating heating effect in the low temperature region to balance the overall temperature field. The conversion module 23 is used to construct a thermal field equalization algorithm and convert the temperature distribution difference into temperature control command parameters according to the thermal field equalization algorithm to drive the semiconductor temperature control unit to perform zoned temperature control operation. The correction module 24 is used to dynamically correct the current flux of the semiconductor temperature control unit based on the real-time temperature field data fed back by the infrared thermal imager, and adjust the increase or decrease of the current flux through a two-stage control mechanism to achieve the synergistic goal of continuous balanced control of the temperature field and optimization of the energy consumption of the semiconductor temperature control unit.

[0094] Figure 2 The aforementioned energy efficiency optimization system for garment finishing agent production lines based on digital twins can perform... Figure 1The implementation principle and technical effects of the digital twin-based energy efficiency optimization method for garment finishing agent production lines described in the illustrated embodiment will not be repeated here. The specific operation methods of each module and unit in the digital twin-based energy efficiency optimization system for garment finishing agent production lines described in the above embodiments have been detailed in the relevant method embodiments and will not be elaborated upon here.

[0095] In one possible design, Figure 2 The illustrated embodiment of an energy efficiency optimization system for a garment finishing agent production line based on digital twins can be implemented as a computing device, such as... Figure 3 As shown, the computing device may include a storage component 31 and a processing component 32; The storage component 31 stores one or more computer instructions, wherein the one or more computer instructions are invoked and executed by the processing component 32.

[0096] The processing component 32 is used for the above Figure 1 The embodiment describes a method for optimizing the energy efficiency of a garment finishing agent production line based on digital twins.

[0097] The processing component 32 may include one or more processors to execute computer instructions to complete all or part of the steps in the above-described method. Alternatively, the processing component may be implemented as one or more application-specific integrated circuits (ASICs), digital signal processors (DSPs), digital signal processing devices (DSPDs), programmable logic devices (PLDs), field-programmable gate arrays (FPGAs), controllers, microcontrollers, microprocessors, or other electronic components to perform the above-described method.

[0098] Storage component 31 is configured to store various types of data to support operations at the terminal. The storage component can be implemented by any type of volatile or non-volatile storage device or a combination thereof, such as static random access memory (SRAM), electrically erasable programmable read-only memory (EEPROM), erasable programmable read-only memory (EPROM), programmable read-only memory (PROM), read-only memory (ROM), magnetic storage, flash memory, magnetic disk, or optical disk.

[0099] Of course, computing devices may also include other components, such as input / output interfaces, display components, communication components, etc.

[0100] Input / output interfaces provide interfaces between processing components and peripheral interface modules, which can be output devices, input devices, etc.

[0101] The communication components are configured to facilitate wired or wireless communication between computing devices and other devices.

[0102] The computing device can be a physical device or an elastic computing host provided by a cloud computing platform. In this case, the computing device can refer to a cloud server, and the aforementioned processing components, storage components, etc., can be basic server resources rented or purchased from the cloud computing platform.

[0103] This application also provides a computer storage medium storing a computer program, which, when executed by a computer, can perform the above-described functions. Figure 1 The illustrated embodiment presents a method for optimizing the energy efficiency of a garment finishing agent production line based on digital twins.

[0104] Those skilled in the art will clearly understand that, for the sake of convenience and brevity, the specific working processes of the systems, devices, and units described above can be referred to the corresponding processes in the foregoing method embodiments, and will not be repeated here.

[0105] The device embodiments described above are merely illustrative. The units described as separate components may or may not be physically separate. The components shown as units may or may not be physical units; that is, they may be located in one place or distributed across multiple network units. Some or all of the modules can be selected to achieve the purpose of this embodiment according to actual needs. Those skilled in the art can understand and implement this without any creative effort.

[0106] Through the above description of the embodiments, those skilled in the art can clearly understand that each embodiment can be implemented by means of software plus necessary general-purpose hardware platforms, and of course, it can also be implemented by hardware. Based on this understanding, the above technical solutions, in essence or the part that contributes to the prior art, can be embodied in the form of a software product. This computer software product can be stored in a computer-readable storage medium, such as ROM / RAM, magnetic disk, optical disk, etc., and includes several instructions to cause a computer device (which may be a personal computer, server, or network device, etc.) to execute the methods described in the various embodiments or some parts of the embodiments.

[0107] Finally, it should be noted that the above embodiments are only used to illustrate the technical solutions of this application, and are not intended to limit them. Although this application has been described in detail with reference to the foregoing embodiments, those skilled in the art should understand that modifications can still be made to the technical solutions described in the foregoing embodiments, or equivalent substitutions can be made to some of the technical features. Such modifications or substitutions do not cause the essence of the corresponding technical solutions to deviate from the spirit and scope of the technical solutions of the embodiments of this application.

Claims

1. A method for optimizing the energy efficiency of a garment finishing agent production line based on digital twins, characterized in that, include: The temperature field data of the clothing surface is captured in real time by an infrared thermal imager, and the temperature field data is analyzed by regional temperature difference to generate a heat map. The heat map marks the temperature distribution difference between high temperature area and low temperature area. A semiconductor temperature control unit is integrated inside the drying oven, and the current flux of the semiconductor temperature control unit is adjusted based on the temperature distribution difference of the thermogram. The current flux triggers the directional cooling effect in the high-temperature region and the compensating heating effect in the low-temperature region to balance the overall temperature field. A thermal field equalization algorithm is constructed, and the temperature distribution difference is converted into temperature control command parameters based on the thermal field equalization algorithm to drive the semiconductor temperature control unit to perform zoned temperature control operation; The current flux of the semiconductor temperature control unit is dynamically corrected based on the real-time temperature field data fed back by the infrared thermal imager, and the increase or decrease of the current flux is adjusted through a two-stage control mechanism to achieve the synergistic goal of continuous balanced control of the temperature field and optimization of the energy consumption of the semiconductor temperature control unit.

2. The method according to claim 1, characterized in that, The current flux of the semiconductor temperature control unit is dynamically corrected based on real-time temperature field data feedback from an infrared thermal imager. A two-stage control mechanism is used to adjust the increase or decrease in the current flux, achieving the synergistic goal of continuous temperature field balance control and semiconductor temperature control unit energy consumption optimization. This includes: The infrared thermal imager continuously captures temperature field data of the garment surface inside the drying oven and calculates the real-time temperature difference between the high-temperature and low-temperature regions in the temperature field data. When the real-time temperature difference value is greater than a preset threshold, the large correction phase of the two-stage control mechanism is triggered. The large correction phase combines the real-time temperature difference value with the first adjustment intensity coefficient of the two-stage control mechanism to calculate the increase in current flux. When the real-time temperature difference value is less than the preset threshold, the fine-tuning correction stage of the two-stage control mechanism is triggered. The fine-tuning correction stage combines the real-time temperature difference value with the second adjustment intensity coefficient of the two-stage control mechanism to calculate the current flux adjustment amount. The current flux increase is combined with the current flux adjustment to correct the current flux of the semiconductor temperature control unit. The semiconductor temperature control unit executes an adjusted current flux to achieve the synergistic goal of continuous temperature field balance control and semiconductor temperature control unit energy consumption optimization.

3. The method according to claim 1, characterized in that, Constructing a thermal field equalization algorithm, and converting the temperature distribution differences into temperature control command parameters based on the thermal field equalization algorithm to drive the semiconductor temperature control unit to perform zoned temperature control operations, including: A thermal field equalization algorithm is constructed, and the temperature conversion coefficient and thermoelectric response coefficient in the thermal field equalization algorithm are extracted. The target temperature adjustment amount is calculated based on the temperature distribution difference and the thermal temperature conversion coefficient. Based on the target temperature adjustment amount and the thermoelectric response coefficient, the temperature control command parameters of the semiconductor temperature control unit are calculated. The semiconductor temperature control unit receives the temperature control command parameters to adjust the unit's operating current; Based on the adjusted unit operating current, the Peltier effect is triggered to perform zoned temperature control operations, namely directional cooling in high-temperature areas and compensatory heating in low-temperature areas.

4. The method according to claim 1, characterized in that, A semiconductor temperature control unit is integrated within the drying oven. Based on the temperature distribution differences in the thermogram, the current flux of the semiconductor temperature control unit is adjusted. This current flux triggers a directional cooling effect in the high-temperature region and a compensating heating effect in the low-temperature region to balance the overall temperature field. This includes: A semiconductor temperature control unit is installed on the inner wall of the drying oven, and the corresponding semiconductor temperature control unit in the drying oven is matched according to the coordinate position of the high temperature area in the thermogram, so as to locate the target refrigeration execution unit of the semiconductor temperature control unit. The cooling current flux value is calculated based on the temperature values ​​of the high-temperature region in the heat map and the thermoelectric conversion coefficient of the semiconductor temperature control unit. Match the corresponding semiconductor temperature control unit based on the coordinate position of the low-temperature region in the heat map, so as to locate the target heating execution unit of the semiconductor temperature control unit; The compensation heating current flux value is calculated based on the temperature values ​​of the low-temperature region in the heat map and the thermoelectric conversion coefficient of the semiconductor temperature control unit. The cooling current flux is applied to the semiconductor temperature control unit in the high-temperature region to perform a directional cooling effect, while the heating current flux is applied to the semiconductor temperature control unit in the low-temperature region to perform a compensating heating effect.

5. The method according to claim 4, characterized in that, Applying a cooling current flux to the semiconductor temperature control unit in the high-temperature region to perform a directional cooling effect, while applying a heating current flux to the semiconductor temperature control unit in the low-temperature region to perform a compensating heating effect, including: The cooling current flux value corresponding to the high temperature region is applied to the current generator, and the current generator is driven to connect to the positive and negative electrodes of the semiconductor temperature control unit in the high temperature region through wires, thereby applying the cooling current flux value to the semiconductor temperature control unit. The semiconductor temperature control unit triggers the Peltier effect under the action of the cooling current flux value, causing the cooling end of the semiconductor temperature control unit to contact the surface of the clothing, so as to generate a directional cooling effect. The heating current flux value corresponding to the low temperature region is applied to the current generator, and the current generator is driven to connect to the positive and negative electrodes of the semiconductor temperature control unit in the low temperature region through wires, so as to apply the heating current flux value to the semiconductor temperature control unit. The semiconductor temperature control unit triggers the Peltier effect under the action of the heating current flux value, causing the heating end of the semiconductor temperature control unit to contact the surface of the clothing, so as to generate a compensating heating effect.

6. The method according to claim 4, characterized in that, A semiconductor temperature control unit is installed on the inner wall of the drying oven, and the corresponding semiconductor temperature control unit inside the drying oven is matched according to the coordinate position of the high-temperature area in the thermogram to locate the target refrigeration execution unit of the semiconductor temperature control unit, including: Semiconductor temperature control units are installed on the inner wall of the drying oven according to a preset grid coordinate, and the position coordinate data of each semiconductor temperature control unit are recorded; The contour boundary of the high-temperature region in the heat map is analyzed, and the coordinates of the center point of the high-temperature region are extracted based on the contour boundary. Calculate the straight-line distance between the center point coordinates of the high-temperature region and the position coordinates of the semiconductor temperature control unit; Semiconductor temperature control units whose straight-line distance is less than a preset position matching tolerance threshold are selected, and the semiconductor temperature control units are marked as target cooling execution units.

7. The method according to claim 1, characterized in that, Infrared thermal imagers capture real-time temperature field data of the clothing surface, and perform regionalized temperature difference analysis on the temperature field data to generate a heat map. The heat map marks the temperature distribution differences between high-temperature and low-temperature regions, including: The surface of the moving garment inside the drying oven is scanned by an infrared thermal imager to obtain the temperature values ​​at various points on the garment surface, and the temperature values ​​at each point are integrated to form temperature field data. The temperature field data is analyzed by regional temperature difference analysis to identify continuous location clusters where the temperature value is greater than a preset threshold, and the continuous location clusters are marked as high temperature regions. Identify consecutive location clusters where the temperature value is less than a preset threshold, and mark the consecutive location clusters as low-temperature regions; Calculate the difference in temperature values ​​between adjacent points in the temperature field data, and use the difference as the temperature distribution difference between locations; High-temperature areas are drawn with warm colors and low-temperature areas are drawn with cool colors on a preset coordinate map of the clothing surface to generate a heat map with temperature distribution differences.

8. A digital twin-based energy efficiency optimization system for garment finishing agent production lines, characterized in that, include: The analysis module is used to capture temperature field data of the clothing surface in real time using an infrared thermal imager, and to perform regional temperature difference analysis on the temperature field data to generate a heat map, which marks the temperature distribution differences between high-temperature and low-temperature regions. The adjustment module is used to integrate a semiconductor temperature control unit in the drying oven and adjust the current flux of the semiconductor temperature control unit based on the temperature distribution difference of the thermogram. The current flux triggers the directional cooling effect in the high-temperature region and the compensating heating effect in the low-temperature region to balance the overall temperature field. The conversion module is used to construct a thermal field equalization algorithm and convert the temperature distribution difference into temperature control command parameters according to the thermal field equalization algorithm to drive the semiconductor temperature control unit to perform zoned temperature control operation. The correction module is used to dynamically correct the current flux of the semiconductor temperature control unit based on the real-time temperature field data fed back by the infrared thermal imager, and adjust the increase or decrease of the current flux through a two-stage control mechanism to achieve the synergistic goal of continuous balanced control of the temperature field and optimization of the energy consumption of the semiconductor temperature control unit.

9. A computing device, characterized in that, It includes a processing component and a storage component; the storage component stores one or more computer instructions; the one or more computer instructions are invoked and executed by the processing component to implement the energy efficiency optimization method for a garment finishing agent production line based on digital twins as described in any one of claims 1 to 7.

10. A computer storage medium, characterized in that, The device contains a computer program that, when executed by a computer, implements a digital twin-based energy efficiency optimization method for garment finishing agent production lines as described in any one of claims 1 to 7.

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