Atmospheric exposure prevention in gas delivery systems

Abstract

Semiconductor processing apparatuses and techniques are provided. Some apparatuses may have a process chamber having a first portion with a first fluid disconnect having a first port and a gas distributor configured to distribute fluid into a process volume and a second portion with a second fluid disconnect having a second port; a fluid delivery system having a plurality of gas source manifolds, a first delivery portion within the first portion and having a first delivery conduit fluidly coupled with the first port, and a second delivery portion within the second portion and having a second delivery conduit fluidly coupled with the second port; and a controller having one or more processors and one or more memories that store instructions for controlling the processing chamber and the fluid delivery system.

Description

[0001] Incorporated by Reference The PCT Application Table, which is part of this application, is concurrently filed with this specification. Each of the applications listed in the concurrently filed PCT Application Table from which this application claims benefit of or priority is incorporated by reference in its entirety and for all purposes. BACKGROUND

[0002] Semiconductor manufacturing generally involves one or more process operations to deposit and / or etch structures on or in a semiconductor wafer (or substrate). Such processes can employ one or more vapor delivery systems in which a vapor, and sometimes a gas precursor, reacts with and / or on a surface of a substrate to deposit material thereon or remove material therefrom. Although vapor delivery systems exist in a variety of forms, they are generally configured to provide controlled flow and delivery of a precursor that can be in a liquid or solid state at ambient temperature and atmospheric pressure conditions.

[0003] The background description provided here is for the purpose of generally presenting the context of the disclosure. The work of the presently designated inventors, to the extent the work is SUMMARY

[0004] Details of one or more implementations of the subject matter described in this specification are set forth in the accompanying drawings and the description below. Other features, aspects, and advantages will become apparent from the description, the drawings, and the claims. Non-limiting implementations are regarded as part of the disclosure that is to be within the scope of the disclosure as defined by the entire contents of the description and the accompanying drawings.

[0005] Some aspects provide systems, apparatuses, and techniques to prevent or at least reduce the likelihood of exposure of gas delivery conduits to atmosphere, e.g., during processing chamber maintenance procedures and precursor ampoule replacement.

[0006] In some embodiments, a semiconductor processing apparatus can be provided. The semiconductor processing apparatus can have a process chamber having a first portion with a first fluid break having a first port and a gas distributor configured to distribute a fluid into a process volume, and a second portion having a second fluid break having a second port, a fluid delivery system having a plurality of gas source manifolds, a first delivery portion within the first portion having a first delivery conduit fluidly coupled with the first port, and a second delivery portion within the second portion having a second delivery conduit fluidly coupled with the second port, and a controller having one or more processors and one or more memories storing instructions for controlling the process chamber and the fluid delivery system. The first portion can be movably engageable with the second portion in a first configuration in which the first port of the first fluid break is fluidly connected with the second port of the second fluid break, thereby establishing a fluid connection between the first delivery portion and the second delivery portion, and in a second configuration in which the first fluid break can be fluidly disconnected from the second fluid break, thereby causing the first delivery portion to be fluidly disconnected from the second delivery portion. The instructions can be configured to cause the one or more processors to cause the fluid delivery system to flow one or more first process chemicals along a first flowpath through the second fluid break and through the first delivery portion to the gas distributor when in the first configuration, the first flowpath having a first section within the first delivery portion and a second section within the second delivery portion, the first section having at least the first delivery conduit, the second section having at least the second delivery conduit, and to flow a first purge gas along the first section and through the first port when in the second configuration, and to flow a second purge gas along the second section and through the second port while flowing the first purge gas.

[0007] In some embodiments, the instructions can be further configured to cause the one or more processors to cause the fluid delivery system to flow one or more second process chemicals along a second flowpath to the gas distributor through only the first delivery portion when in the first configuration, and to flow a third purge gas along the second flowpath and through the gas distributor while flowing the first and second purge gases when in the second configuration.

[0008] In some such embodiments, the second flowpath can partially overlap the first section of the first flowpath within the first portion.

[0009] In some such embodiments, the instructions can be further configured to cause the one or more processors to cause the fluid delivery system to: close a first valve along the second flowpath, and flow the one or more first process chemicals along the first flowpath to the gas distributor, thereby fluidically isolating an upstream section of the second flowpath from an overlap section of the second flowpath and the first flowpath, and, while flowing the one or more second process chemicals along the second flowpath to the gas distributor, close a second valve along the first flowpath, thereby fluidically isolating an upstream section of the first flowpath from the overlap section of the second flowpath and the first flowpath.

[0010] In one of the above embodiments, the third purge gas can flow along the overlap section of the first flowpath and the second flowpath to the gas distributor.

[0011] In any of the above embodiments, the first fluid break can have a third port, the second fluid break can have a fourth port, the third port of the first fluid break can be fluidically connected with the fourth port of the second fluid break in the first configuration, thereby establishing a second fluid connection between the first delivery portion and the second delivery portion, and the instructions can be further configured to cause the one or more processors to cause the fluid delivery system to: while in the first configuration, flow one or more third process chemicals along a third flowpath, through the second fluid break, and through the first delivery portion to the gas distributor, the third flowpath having a first section within the first delivery portion and having a second section within the second delivery portion, the first section of the third flowpath having at least a third delivery conduit fluidically coupled with the third port, the second section of the third flowpath having at least a fourth delivery conduit fluidically coupled with the fourth port, and, while in the second configuration and while flowing the first purge gas and the second purge gas: flow a fourth purge gas along the first section of the third flowpath and through the third port, and flow a fifth purge gas along the second section of the third flowpath and through the fourth port.

[0012] In some such embodiments, the fourth purge gas can be the first purge gas, and the fifth purge gas can be the second purge gas.

[0013] In one of the above embodiments, the first section of the third flowpath can partially overlap the first section of the first flowpath.

[0014] In any of the above embodiments, the fluid delivery system can further include a vacuum pump fluidly connected with the second port of the second fluid break, and the instructions can be further configured to cause the one or more processors to cause the fluid delivery system to draw the first section of the first flowpath to vacuum through the first port and the second port when in the first configuration.

[0015] In some such embodiments, the first fluid break can have a fifth port, the second fluid break can have a sixth port, the fifth port of the first fluid break can be in fluid connection with the sixth port of the second fluid break when in the first configuration, thereby establishing a third fluid connection between the first delivery portion and the second delivery portion, and the instructions can be further configured to cause the one or more processors to cause the fluid delivery system to draw a fourth flowpath of the first delivery portion within the first portion to vacuum through the fifth port, the sixth port, and the second fluid break when in the first configuration.

[0016] In any of the above embodiments, the fluid delivery system can further include a vapor delivery device having a reservoir containing a precursor, an inlet, and an outlet, and the instructions can be further configured to cause the one or more processors to cause the fluid delivery system to flow a gas into the inlet and out of the outlet along a fifth flowpath to the gas distributor, and to flow a sixth purge gas into the inlet and out of the outlet along a section of the fifth flowpath and not through the reservoir.

[0017] In some such embodiments, the first fluid break can have a seventh port, the second fluid break can have an eighth port, the seventh port of the first fluid break can be in fluid connection with the eighth port of the second fluid break when in the first configuration, thereby establishing a fourth fluid connection between the first delivery portion and the second delivery portion, and the instructions can be further configured to cause the one or more processors to cause the fluid delivery system to flow the sixth purge gas out of an outlet of the reservoir and out of the seventh port along a section of the fifth flowpath and to flow a seventh purge gas through the second fluid break and out of the eighth port while flowing the first purge gas and the second purge gas when in the second configuration.

[0018] In any of the above embodiments, the first portion and the second portion can be relatively offset from each other by at least one foot when in the second configuration.

[0019] In any of the above embodiments, a process operation can not be performed when in the second configuration.

[0020] In any of the above embodiments, the first portion can be a removable top of a multi-station semiconductor processing apparatus.

[0021] In any of the above embodiments, the one or more first process chemicals can flow through the second fluid break and through the first delivery portion along the first flow path to the gas distributor during a first time interval, the first purge gas can flow in the first portion along the first section of the first flow path and through the first port during a second time interval while the first portion is in the second configuration, and the second purge gas can flow in the second portion along the second section of the first flow path and through the second port during the second time interval.

[0022] In some embodiments, a semiconductor processing apparatus can be provided. The semiconductor processing apparatus can have a process chamber having a first portion with a first fluid break having a first port and a gas distributor configured to distribute a fluid into a process volume, and a second portion having a second fluid break having a second port, a fluid delivery system having a plurality of gas source manifolds, a first delivery portion within the first portion having a first delivery conduit fluidically coupled with the first port, and a second delivery portion within the second portion having a second delivery conduit fluidically coupled with the second port, and a controller having one or more processors and one or more memories storing instructions for controlling the process chamber and the fluid delivery system. The first portion can be moveably engaged with the second portion in a first configuration in which the first port of the first fluid break is fluidically connected with the second port of the second fluid break, thereby establishing a fluidic connection between the first delivery portion and the second delivery portion, and in a second configuration in which the first fluid break can be fluidically disconnected from the second fluid break, thereby causing the first delivery portion to be fluidically disconnected from the second delivery portion. The instructions can be configured to cause the one or more processors to cause the fluid delivery system to flow one or more first process chemicals along a first flow path through the second fluid break and through the first delivery portion to the gas distributor when in the first configuration, the first flow path having a first section within the first delivery portion and a second section within the second delivery portion, the first section having at least the first delivery conduit, the second section having at least the second delivery conduit, and to concurrently flow a first purge gas along the first section and through the first port and a second purge gas along the second section and through the second port when in the second configuration.

[0023] In some embodiments, one or more non-transitory computer- readable media storing computer-executable instructions can be provided. The one or more non-transitory computer-readable media storing computer-executable instructions that, when executed by one or more processors of a semiconductor processing tool including a process chamber having a first portion with a first fluid break having a first port and a gas distributor configured to deliver fluid into a process volume and a second portion having a second fluid break having a second port, and a fluid delivery system having a plurality of gas source manifolds, a first delivery portion within the first portion, and a second delivery portion within the second portion, can cause the one or more processors to: cause the first portion and the second portion to be in a first configuration such that the first portion is movably engaged with the second portion, wherein in the first configuration the first port of the first fluid break is fluidically connected with the second port of the second fluid break, thereby establishing a fluidic connection between the first delivery portion and the second delivery portion, cause the first portion and the second portion to be in a second configuration in which the first portion is separated from the second portion, wherein in the second configuration the first fluid break is fluidically disconnected from the second fluid break, thereby causing the first delivery portion to be fluidically disconnected from the second delivery portion, cause the fluid delivery system to: when in the first configuration, cause one or more first process chemicals to flow along a first flowpath to the gas distributor through the second fluid break and through the first delivery portion, the first flowpath having a first section within the first delivery portion and a second section within the second delivery portion, the first section having at least the first delivery conduit, the second section having at least the second delivery conduit, and when in the second configuration, cause a first purge gas to flow along the first section of the first flowpath and through the first port, and while causing the first purge gas to flow, cause a second purge gas to flow along the second section of the first flowpath and through the second port.

[0024] In some such embodiments, the instructions can be further configured to cause the one or more processors to cause the fluid delivery system to: when in the first configuration, cause one or more second process chemicals to flow to the gas distributor along a second flowpath through only the first delivery portion, and when in the second configuration and while causing the first and second purge gases to flow, cause a third purge gas to flow along the second flowpath and through the gas distributor.

[0025] In some such embodiments, the instructions can be further configured to cause the one or more processors to cause the fluid delivery system to close a first valve along the second flowpath and flow the one or more first process chemicals along the first flowpath to the gas distributor, thereby fluidically isolating an upstream section of the second flowpath from an overlapping section of the second flowpath and the first flowpath, and, while flowing the one or more second process chemicals along the second flowpath to the gas distributor, close a second valve along the first flowpath, thereby fluidically isolating an upstream section of the first flowpath from the overlapping section of the second flowpath and the first flowpath.

[0026] In any of the above embodiments, the first fluid break can have a third port, the second fluid break can have a fourth port, the third port of the first fluid break can be fluidically connected with the fourth port of the second fluid break in the first configuration, thereby establishing a second fluid connection between the first delivery portion and the second delivery portion, and the instructions can be further configured to cause the one or more processors to cause the fluid delivery system to, while in the first configuration, flow one or more third process chemicals along a third flowpath, through the fluid break, and through the first delivery portion to the gas distributor, the third flowpath having a first section within the first delivery portion and having a second section within the second delivery portion, the first section of the third flowpath having at least a third delivery conduit fluidically coupled with the third port, the second section of the third flowpath having at least a fourth delivery conduit fluidically coupled with the fourth port, and, while in the second configuration and while flowing the first purge gas and the second purge gas, flow a fourth purge gas along the first section of the third flowpath and through the third port, and flow a fifth purge gas along the second section of the third flowpath and through the fourth port.

[0027] In any of the above embodiments, the fluid delivery system can further include a vacuum pump fluidically connected with the second port of the second fluid break, and the instructions can be further configured to cause the one or more processors to cause the fluid delivery system to pull the first delivery portion of the first flowpath to vacuum through the first port and the second port while in the first configuration.

[0028] In any of the above embodiments, the first fluid disconnector may have a fifth port, and the second fluid disconnector may have a sixth port. In the first configuration, the fifth port of the first fluid disconnector may be fluidly connected to the sixth port of the second fluid disconnector, thereby establishing a third fluid connection between the first delivery portion and the second delivery portion. The instruction may also be configured to cause the one or more processors to cause the fluid delivery system, when in the first configuration, to evacuate the fourth flow path of the first delivery portion within the first portion through the fifth port, the sixth port, and the second fluid disconnector.

[0029] In any of the above embodiments, the fluid delivery system may further include a vapor delivery device having a reservoir for receiving precursors, an inlet, and an outlet, and the instructions may also be configured to cause the one or more processors to cause the fluid delivery system to: allow gas to flow into the inlet and allow the gas and precursors to flow out of the outlet along a fifth flow path and to the gas distributor, and allow a sixth purge gas to flow into the inlet and out of the outlet without passing through the reservoir.

[0030] Other aspects will be set forth in the detailed description below, and in part will be obvious from the present disclosure or may be learned by practice of the disclosed aspects and / or the claimed subject matter.

[0031] The foregoing summary description and the following detailed description are illustrative and explanatory, and are intended to provide further explanation of the claimed subject matter. Attached Figure Description

[0032] The various aspects disclosed herein are shown by way of example rather than limitation in the accompanying drawings, wherein similar reference numerals refer to similar elements.

[0033] Figure 1 A semiconductor processing system is schematically depicted based on certain aspects.

[0034] Figure 2 It is illustrated in some aspects Figure 1 Semiconductor processing systems.

[0035] Figure 3 It is illustrated in some aspects Figure 1 Semiconductor processing systems.

[0036] Figure 4 It is illustrated in some aspects Figure 1 It is part of the gas and vapor delivery system of a semiconductor processing system.

[0037] Figure 5Another portion of a gas and vapor delivery system of a semiconductor processing system is schematically illustrated in accordance with certain aspects Figure 1

[0038] Figure 6 Another portion of a gas and vapor delivery system of a semiconductor processing system is schematically illustrated in accordance with certain aspects Figure 1 4

[0039] Figure 7 A partially exploded perspective view of a portion of a processing chamber including a fluid break of Figures 1-3

[0040] Figure 8 An exploded perspective view of a fluid break of Figure 7

[0041] Figure 9 A partially perspective view of a first portion of a processing chamber of Figure 7

[0042] Figure 10 An orthographic projection view of a first portion of a processing chamber of Figure 7 9

[0043] Figure 11 A partially perspective view of a second portion of a processing chamber of Figure 7

[0044] Figure 12 A partially orthographic projection view of a second portion of a processing chamber of Figure 7 11

[0045] Figure 13A An operational state of a portion of a system of Figure 4

[0046] An operational state of a system of Figure 13B Figure 4 Another operational state of a portion of a system of

[0047] Figure 13C Figure 13A An operational state of another portion of a system of

[0048] Figure 13D An operational state of another portion of a system of Figure 4 ​​​​​​​​​​​​​​

[0049] Figure 13E Another operational state of portions of the system of Figure 13D is schematically illustrated according to certain aspects.

[0050] Figure 14 A first fluid disconnect, a second fluid disconnect, and a gas distributor of the apparatus of Figure 2 are schematically illustrated according to some aspects.

[0051] Figure 15 Another configuration of the apparatus of Figure 2 is schematically illustrated according to certain aspects when in a second configuration.

[0052] Figure 16 Various operational states of the system of Figure 5 are schematically illustrated according to certain aspects.

[0053] Figure 17 Various operational states of the system of Figure 5 are schematically illustrated according to certain aspects.

[0054] Figure 18 Various operational states of the system of Figure 4 are schematically illustrated according to certain aspects.

[0055] Figure 19 Various operational states of the system of Figure 6 are schematically illustrated according to certain aspects.

[0056] Figure 20 Various operational states of the system of Figure 6 are schematically illustrated according to certain aspects.

[0057] Figure 21 Various operational states of the system of Figure 5 are schematically illustrated according to certain aspects.

[0058] Figure 22 Various operational states of the system of Figure 5 are schematically illustrated according to certain aspects.

[0059] Figure 23 A multi-station processing tool according to some aspects is schematically depicted. DETAILED DESCRIPTION

[0060] In the following description, numerous specific details are set forth to provide a thorough understanding of various aspects. The disclosed aspects can be practiced without some or all of these specific details. In other instances, well known process operations have not been described in detail so as not to unnecessarily obscure the disclosed aspects. While the disclosed aspects will be described in conjunction with the specific aspects, it will be understood that it is not intended to limit the disclosed aspects.

[0061] In this application, the terms "semiconductor wafer," "wafer," "substrate," "wafer substrate," and "partially fabricated integrated circuit" are used interchangeably. Those of ordinary skill in the art will understand that the term "partially fabricated integrated circuit" can refer to a silicon wafer during any of a number of stages of integrated circuit fabrication. Wafers or substrates used in the semiconductor device industry typically have a diameter of 200 mm or 300 mm or 450 mm. Other workpieces, in addition to semiconductor wafers, on which the disclosed aspects can be utilized include a variety of articles of manufacture such as printed circuit boards, magnetic recording media, magnetic recording sensors, mirrors, optical elements, micro-mechanical devices, and the like.

[0062] BACKGROUND As previously mentioned, various semiconductor manufacturing processes (such as atomic layer deposition (ALD), atomic layer etching (ALE), chemical vapor deposition (CVD), chemical vapor etching (CVE), and the like, as well as their plasma enhanced versions) can employ at least one vapor phase delivery system in which a vapor phase, and sometimes a gas precursor, reacts with and / or is deposited on a substrate surface to deposit material thereon or remove material therefrom. Although various forms of vapor phase delivery systems exist, they are generally configured to provide controlled gas flow, vaporization, and delivery of precursors that would otherwise be in a liquid or solid phase at ambient temperature and atmospheric pressure conditions. Although the transition from a solid phase directly to a vapor phase is technically a sublimation process, the term "vaporization" is used herein to refer to the transition from a solid or liquid phase to a vapor phase. Regardless, servicing semiconductor processing chambers that include such vapor phase delivery systems can prove problematic. For example, when a semiconductor processing chamber is to be opened to perform system servicing, or when a supply of a precursor is to be changed or otherwise replenished, various gas delivery paths can be exposed to the atmosphere of the surrounding environment via disconnects and gas distributors. The constituents of certain process chemicals, gases, vapors, liquids, and / or precursors can react adversely with one or more atmospheric constituents (e.g., atmospheric moisture), which can result in the accumulation of undesirable materials in the various gas delivery paths. In certain instances, removing this accumulated material can be too difficult or uneconomical, and thus, can not only result in the replacement of components and / or systems prior to their intended useful life, but can also result in undesirable downtime of the associated semiconductor processing tool. Accordingly, various aspects are directed to providing effective, cost-efficient techniques to prevent or at least reduce the likelihood of the exposure of the various gas delivery paths to the atmosphere of the surrounding environment. Nonetheless, certain aspects allow for the pumping out of incidental atmospheric gases from the system prior to the semiconductor processing tool being re-commissioned.

[0063] System for semiconductor processing Figures 1-3 A semiconductor processing system is schematically illustrated in accordance with certain aspects. Figures 4-6 A semiconductor processing system is schematically illustrated in accordance with certain aspects. Figures 1-3 A portion of a fluid delivery network of a semiconductor processing system.

[0064] Referring to Figures 1-6 A semiconductor processing system (or system) 100 can include a process chamber 101 fluidically connected to a fluid delivery network (or system) 400, which in turn is fluidically connected to a gas source 401, in accordance with aspects. Figure 4 and 5The fluid delivery system 400 is configured to deliver process gases, vapors, chemicals, compounds, mixtures, liquids, and the like for processing semiconductor substrates or wafers. The term "fluid" can include any gas, liquid, vapor form of material, or combinations thereof, including, for example, a gas, a combination of different gases, a liquid, a combination of liquids, a combination of one or more liquids and one or more gases, a vaporized article or compound, one or more vaporized articles or compounds, one or more vaporized articles or compounds and one or more gases, one or more vaporized articles or compounds and one or more liquids, one or more vaporized articles or compounds and one or more gases and one or more liquids. As used herein, the fluid delivery system 400 can be considered a gas delivery system, a liquid delivery system, a vapor delivery system, or a combination thereof in some embodiments. The term "gas" can include one or more gases, a mixture of one or more gases and other elements or compounds such as gases and precursors, process gases, process chemicals, or combinations thereof. The processing chamber 101 can include a first portion 105 and a second portion 107 that is moveably engaged with the first portion 105. In some cases, the first portion 105 can define a lower portion (or module) of the processing chamber 101 in which at least one internal cavity region (or enclosed space) 109 can be formed, and the second portion 107 can define an upper portion (or lid) of the processing chamber 101. At least one of the first portion 105 and the second portion 107 can be configured to translate in (or along) an axial direction, e.g., parallel (or substantially parallel) to the Z-axis described in Figure 1 and Figure 2 The first portion 105 and the second portion 107 can be configured to translate in (or along) an axial direction, e.g., parallel (or substantially parallel) to the Z-axis described in Figure 1 and Figure 2As shown, at least one actuator (e.g., actuator 111) can be used to at least partially cause the second portion 107 to displace along a plurality of support rails (e.g., support rails 113 and 115) of the support structure (or frame) in the axial direction. In some cases, the actuator 111 can be any suitable mechanism capable of inducing linear motion, such as a stepper motor, a servo motor, and the like, coupled to at least one of the processing chamber 101 and the support structure, although embodiments are not limited thereto. For example, in some cases, the second portion 107 can be lifted away from the first portion 105 by an integrated or detachable tool elevator, crane, robotic arm, or the like. Further, the support structure can be configured to support the processing chamber 101 in an elevated position, for example, relative to a floor 117 of a manufacturing facility. Accordingly, the support rails (e.g., support rails 113 and 115) of the support structure can be laterally braced by one or more lateral and / or cross braces (e.g., lateral braces 119 and 121). The first portion 105 and the second portion 107 are separated from one another at a location referred to as a split plane 104.

[0065] Referring temporarily to Figure 3 Some additional features of the processing chamber (or chamber) 101 will now be described. As previously mentioned, the chamber 101 can be divided into a first portion 105 and a second portion 107 that is movably engaged with the first portion 105; these portions 105 and 107 are depicted in Figure 1 and 2 , but are depicted differently in Figure 3 . In a first position, state, or configuration, such as in Figure 1 and 3 , the first portion 105 and the second portion 107 can be engaged together to enclose a space at least partially defined by the interior cavity region 109. In a second position, state, or configuration, such as in Figure 2 , the second portion 107 can be lifted away from the first portion 105 to allow access to at least the interior cavity region 109. The central column 302 can be configured to support the susceptor 301 within the interior cavity region 109, for example, when a surface of the wafer 303 is being processed, for example, when a film is being formed on the surface of the wafer 303, when a feature is being etched on the surface of the wafer 303, or when a structure is being formed on the surface of the wafer 303, among others.

[0066] According to certain aspects, the susceptor 301 can be, or include, a powered electrode. As such, the susceptor 301 can be electrically coupled to a power source 305 via a matching network 307. To this end, the power source 305 can be controlled by a control module (or controller) 309. In some embodiments, power can also be provided to the gas distributor 311 in addition to (or instead of) the susceptor 301. The control module 309 can be configured to operate aspects of the system 100 by executing one or more sequences of one or more instructions defining at least one process recipe. As such, the control module 309 can set various operational inputs used to define a process recipe, such as power levels, pressurization levels, timing parameters, process gases, precursor supplies, mechanical movements of the wafer 303, height of the wafer 303 relative to the susceptor 301, thermal control of one or more components of the chamber 101, operation of one or more valves during wafer processing, operation of one or more valves during servicing of the system 100, and the like.

[0067] According to some aspects, the center post 302 can include a lift pin mechanism in communication with a lift pin. The lift pin mechanism, and thus the lift pin, can be controlled by, for example, a lift pin control signal from the control module 309. The lift pin can be used to raise the wafer 303 from the susceptor 301 to allow an end effector to pick up the wafer 303, and to lower the wafer 303 after placement by the end effector. In some cases, the lift pin can be part of the center post 302. To this end, the chamber 101 can include a chamber transfer port 310 through which the end effector can introduce the wafer 303 into, or remove the wafer 303 from, the chamber 101. In some examples, relative displacement between the susceptor 301 and the gas distributor 311 can be utilized to provide controlled separation of the wafer 303 from a surface of the gas distributor 311 facing the wafer 303. Controlled separation of the wafer 303 from the surface of the gas distributor 311 can also be configured to control the size of the process volume 313 within which at least a gas-phase precursor can be distributed by the gas distributor 311. The chamber 101 can also include openings 105A and 107A through which portions of the support post 302, the susceptor 301, and the gas distributor 311 (e.g., a stem portion of the gas distributor 311) extend. Although the gas distributor 311 is shown with a showerhead configuration (e.g., a chandelier type), embodiments are not so limited. For example, the gas distributor 311 can be formed as a ceiling and thus incorporated as part of the second portion 107 of the chamber 101. Any other suitable form of gas distributor can be used; however, for ease of reference, the gas distributor 311 will be described as having a showerhead configuration.

[0068] Control of fluid delivery within semiconductor processing apparatuses provided herein is complex, intricate, challenging, and uses many tubes, conduits, valves, fittings, flow control devices, heaters, volatile gases, and the like. When portions of the apparatus are separable, such as Figures 1-3

[0069] As a further introduction and background, various aspects of the fluid delivery system in certain embodiments will now be discussed. The system 100 can also include one or more fluid sources 315 and 316, such as sources of gaseous chemicals from the facility and / or purge (e.g., inert) gases. Depending on the process being performed, the control module 309 can control delivery of one or more gases from the fluid sources 315, as will become more apparent below. The one or more gases can be distributed by the gas distributor 311 at least within the process volume 313. In some examples, a gas supply manifold 317 can be fluidly interposed between the fluid sources 315 and 316 and the gas distributor 311. Appropriate valving and mass flow control mechanisms can be employed and controlled by the control module 309 to ensure that the appropriate gases are delivered during, for example, deposition, etching, and / or plasma treatment phases of a process. To this end, gas flow can be provided to the gas supply manifold 317 via the fluid break 131, as will become more apparent below. It can generally be noted that the fluid break 131 can include additional subcomponents and elements, such as the fluid breaks 125 and 129 (also shown in FIG. 1), as will become more apparent below. Figure 1 2 ​​Some such elements of the fluid break 131 are connected to the first portion 105 and the second portion 107 of the processing chamber 101, respectively, such as the fluid break 125 connected to the second portion 107, and the fluid break 129 connected to the first portion 105. As such, the fluid breaks 125 and 129 are configured to be joined together to form one or more flow paths through the split plane 104 of the processing chamber 101. In some examples, the fluid break 131 can be thermally controlled by the thermal system 325, although embodiments are not so limited.

[0070] Gas can flow from the gas supply manifold 317 into the gas distributor 311 and out of the gas distributor 311 as a gas stream 319. The gas stream 319 can be distributed in a region (or process volume) 313, which can be formed between the wafer 303 and a corresponding surface of the gas distributor 311. Although shown as a rectangular region, the region 313 can be more cloud-like, e.g., in which plasma can be generated and / or one or more process gases, purge gases, or both process and purge gases can flow. In some cases, the gas stream 319 can include one or more vapor phase precursors, which exhibit a solid or liquid phase at ambient temperature and pressure conditions of a manufacturing facility. Now, the delivery of one or more process gases, purge gases, or both process and purge gases will be described in more detail with respect to Figure 1 2 and 4-6. However, it is noted that the fluid break 131, the fluid sources 315 and 316, and the gas supply manifold 317 can be defined by various different portions, and can be generally referred to as a gas and vapor supply system 400 or portions of the system 400. Figures 4-6

[0071] Referring to Figure 1 2 and 4-6, the system 400 can include a first delivery portion 400A and a second delivery portion 400B. The first delivery portion 400A can include a vapor delivery device (or devices) 401 fluidly connected to the gas distributor 311. The device 401 can be configured to supply one or more precursors (or reactants) to the gas distributor 311 in vapor form. In some cases, the precursors can be entrained in at least one carrier gas and flow into the gas distributor 311 via one or more passages, which can be fluidly connected to the gas distributor 311 via a conduit junction 403, such as a tee junction. It is noted that the carrier gas can be at least one gas that is chemically inert with respect to other reactants / process gases used to process a semiconductor wafer. For example, the carrier gas can include argon, helium, neon, nitrogen, and / or the like.

[0072] As further shown in Figure 6 the first delivery portion 400A can include a first vapor delivery device 401A and a second vapor delivery device 401B. The first vapor delivery device 401A can be configured to supply a first precursor to the gas distributor 311 in vapor form. In some cases, the first precursor can be entrained in a first carrier gas and flow into the gas distributor 311 via a first passage, which can be fluidly connected to the gas distributor 311 via a first conduit junction 403A, such as a tee junction. It is noted that the first carrier gas can be at least one gas that is chemically inert with respect to other reactants / process gases used to process a semiconductor wafer. For example, the first carrier gas can include argon, helium, neon, nitrogen, and / or the like.​​​Figure 6 According to certain aspects Figure 1 and 4 Another portion of a gas and vapor delivery system of a semiconductor processing system, the apparatus 401 (also referred to as system 401), can include a reservoir (or ampoule) 405 having an internal volume 407 configured to store an amount of precursor 409 therein, for example, in solid and / or liquid phase. In some embodiments, the reservoir 405 can be made of stainless steel or any other suitable material that is chemically compatible or inert to the reactants stored or flowed therethrough. The reservoir 405 can be heated to a desired temperature (or temperature range) by a heater (e.g., a heating jacket, etc.), and a carrier gas can be flowed through the reservoir 411 at or near the temperature to achieve a desired vapor flow rate from the apparatus 401. In this manner, at least some of the precursor 409 can be entrained in the carrier gas stream and can flow from the reservoir 405 through the conduit fitting 403 and toward the processing chamber 101.

[0073] The carrier gas can flow from a carrier gas source 413 to the reservoir 405 via one or more carrier gas inlets (e.g., at least one of carrier gas inlets 415 and 417) and one or more valves (e.g., at least one of valves 419 and 421). The carrier gas source 413 can be, for example, a facility gas source configured to supply carrier gas to at least one semiconductor processing tool or component (e.g., the apparatus 401). Further, the carrier gas flow from the carrier gas source 413 to the reservoir 405 can be regulated by, for example, at least one of a flow controller 423 (e.g., a mass flow controller) and any other suitable control device or mechanism (e.g., a controller 425). In some cases, the controller 425 can be a system controller, for example, the control module 309 of the system 101, configured to control process conditions and hardware states of the apparatus 401 and / or the processing chamber 101. To this end, the controller 425 and the flow controller 423 can be communicatively coupled to one another and thereby configured to share information that can be used to control process conditions and hardware states of the apparatus 401 and / or the processing chamber 101. Figure 3

[0074] ​In some implementations, the reservoir 405 can be configured as an intermediate source of precursor 409. For example, the apparatus 401 can be configured to supply one or more gas phase precursors to at least one gas distributor of the processing chamber 101 by vaporizing a precursor that exhibits a liquid or solid phase at ambient temperature and pressure conditions. For convenience, the following will assume that the precursor 409 exhibits a solid phase at ambient temperature and pressure conditions, but it should be understood to also include aspects of liquid phase precursors. The bulk precursor can be stored in a bulk reservoir (or tank) 427, which can include one or more heaters configured to transition and / or maintain the precursor to a liquid phase for delivery to the reservoir 405 via one or more precursor supply inlets (e.g., precursor supply inlets 429 and 431) and one or more valves, such as valve 433. A flow controller 435 (e.g., a liquid flow controller) or any other suitable control device or mechanism of or associated with the apparatus 401 (e.g., controller 425) can be configured to regulate a flow (e.g., mass flow, volume flow, etc.) of the liquid phase precursor from the bulk supply source 427 to the reservoir 405 by controlling, for example, one or more valves (e.g., valve 433), pumps, gas sources, etc. of the control system 400. To this end, the flow controller 435 can be configured to receive feedback information (e.g., at least one of temperature, pressure, volume flow, etc.) from one or more sensors located in and / or at various points along the reservoir 405, the bulk supply source 427, and / or a delivery conduit between the bulk supply source 427 and the reservoir 405. In some cases, the one or more sensors can include at least one liquid level sensor 436 and / or an overflow detection sensor 438. The at least one liquid level sensor 436 can be configured to provide an indication of an amount of precursor 409 stored in the reservoir 405, and the overflow detection sensor 438 can be configured to provide an indication of whether the precursor is leaking from the apparatus 401, the reservoir 405, or components thereof. This feedback information can be used by, for example, the flow controller 435 to regulate the flow of the liquid phase precursor from the bulk supply source 427 to the reservoir 405, and in some cases, the flow of the gas phase precursor from the reservoir 405 to the processing chamber 101. The flow controller 435 can also be configured to draw precursor from the bulk supply source 427 and / or replenish the reservoir 405 with precursor from the bulk supply source 427 in any suitable form, such as on-demand, on a schedule, and / or randomly, and / or based on any suitable information (e.g., supply level information, overflow detection information, etc.). In some cases, the flow controller 435 can be communicatively coupled with the controller 425, and thereby configured to share information useful for controlling process conditions and hardware states of the control system 400, the apparatus 401, and / or the processing chamber 101, similar to the manner in which the flow controller 423 and the controller 425 can share information.In some cases, the reservoir 405 can correspond to an ampoule of precursor 409 that is replaced or manually filled, and thus, the body supply 427, precursor supply inlets 429 and 431, valve 433, flow controller 435, etc. can be omitted.

[0075] The carrier gas introduced into the reservoir 405 can receive vaporized reactants from the precursor 409, such that the vaporized reactants can be entrained therein. In some cases, the flow rate and pressure of the carrier gas from the carrier gas source 413 can be controlled by, for example, the flow controller 423 and one or more valves (e.g., valve 419) such that a pressure exists in the reservoir 405 that is conducive to vaporization of the precursor 409. For example, the flow rate and pressure of the carrier gas flowing into the reservoir 405 through the carrier gas inlet 417 can be controlled such that the partial pressure of the vaporized precursor is maintained at or above the vapor pressure of the precursor 409 relative to the local temperature conditions of the reservoir 405. The carrier gas / vapor mixture can exit the reservoir 405 through a reservoir vapor outlet 437, which can be fluidly connected to the gas distributor 311 of the processing chamber 101. Notably, the gas phase precursor output from the reservoir vapor outlet 437 can be output from the apparatus 401 via the vapor outlet 439 based on, for example, the operation of one or more valves (such as valves 441 and 443), pumps, etc. In some cases, the operation of the valves 441 and 443 can be controlled at least in part by a flow controller 445 (e.g., a mass flow controller) and / or any other suitable control device or mechanism of or associated with the apparatus 401 (e.g., controller 425). Similar to the flow controller 427, at least one of the flow controller 445 and the controller 425 can be configured to receive feedback information (such as at least one of a temperature, a pressure, a mass flow, a volume flow, etc.) from one or more sensors (e.g., sensors 447) positioned at and / or disposed along various pathways / conduits fluidly connecting the reservoir 405 and the gas distributor 311, the reservoir 405, the processing chamber 101, etc. In this manner, at least one of the flow controller 445 and the controller 425 can be configured to receive feedback information from, for example, the sensors 447 to dynamically control the operation of the system 400.

[0076] In some embodiments, the flow of vapor phase precursors from vapor outlet 439 via delivery conduit 449 can be combined with the flow of one or more other vapor phase precursors from vapor delivery system 401 and via respective ones of delivery conduits 451, junction 453, and valve 455. In this manner, one or more vapor outputs from system 401 can be combined and delivered to gas distributor 311 via delivery conduits 454, 456, 458, and 460, and at least partially regulated by operation of at least valve 457; this series of valves and delivery conduits can be considered a flow path from vapor delivery apparatus 401 to gas distributor 311. For purposes of the present disclosure, the flow of fluid from one point to another along a series of conduits and valves can be considered a "flow path." As described herein, apparatus 100 includes multiple flow paths. It is also contemplated that junction 453 or any other suitable inlet can be configured to allow introduction of a carrier (or dilution) gas into delivery conduit 454 without passing through tank 405. Whether the source of this gas is via apparatus 401 and / or via junction 453, it can be controlled by one or more flow controllers (e.g., flow controllers 423, 445, and 501, and / or at least one of controllers 425) and one or more valves (e.g., valves 419, 443, 461, 463, 465, etc.).

[0077] In various aspects, the carrier gas introduced into delivery conduit 454 via junction 453 can be used to dilute the carrier gas / vapor flow from vapor outlet 439, or to purge one or more sections or portions of at least one of delivery conduits 454, 456, 458, 460, and 462, and in some cases, processing chamber 101. For example, Figure 6 Apparatus 401 of FIG. 6A can include a passageway 601 (included within the dashed-dotted-dashed shape) having a first end fluidically connected to delivery conduit 449 via junction 603, a second end fluidically connected to carrier gas inlet 417, and a third end configured to be fluidically connected to carrier gas source 413. In one operational configuration of valves 419, 421, and 461 (e.g., valves 419 and 421 in respective open or partially open configurations, and valve 461 in a closed configuration), carrier gas can be caused to flow into tank 405 via carrier gas inlet 417 in association with a stage of a semiconductor processing operation, e.g., deposition, etching, etc. In another operational configuration of valves 419, 421, and 461 (e.g., valves 419 and 461 in respective open or partially open configurations, and valve 421 in a closed configuration), carrier gas can be caused to flow into delivery conduit 449 via junction 603, e.g., during a purge stage of a semiconductor processing operation. In this configuration, carrier gas can not thus enter tank 405. However, embodiments are not so limited. For example, from another aspect (e.g., manifold B 507 (as described in FIG. 6B below), carrier gas can be caused to flow into delivery conduit 449 via junction 603, e.g., during a deposition stage of a semiconductor processing operation. In this configuration, carrier gas can not thus enter tank 405. However, embodiments are not so limited. For example, from another aspect (e.g., manifold B 507 (as described in FIG. 6B below), carrier gas can be caused to flow into delivery conduit 449 via junction 603, e.g., during a deposition stage of a semiconductor processing operation. In this configuration, carrier gas can not thus enter tank 405. However, embodiments are not so limited. Figure 1One or more gases, such as dilution gases, purge gases, process gases, and / or the like, from one or more gas sources (e.g., the one or more gas sources shown) can be introduced into the delivery conduit 454 via the junction 453. In some embodiments, the junction 453 can be a collection or assembly of one or more conduits, valves, fittings, and / or the like. For example, the junction 453 can include a block (e.g., monolithic) flow structure having a plurality of internal and / or external conduits and internal and / or external valves (e.g., manifold and split valves) associated therewith or fluidly connected thereto.

[0078] In some embodiments, the valves 419, 421, 461, and 602 can be controlled to enable purging of one or more delivery conduits between the gas source 413 and the reservoir 405. For example, the valves 419 and 602 can be configured in an open state, and the valves 421 and 461 can be configured in a closed state, to allow, for example, a carrier gas (or any suitable purge gas) to flow through the delivery conduit and to the vacuum 604 via the purge outlet 606. This is described in Figure 20 , which schematically illustrates various operational states of a system of Figure 6 , in accordance with certain aspects.

[0079] In accordance with some aspects, the delivery conduit 454 can be fluidly connected with the gas distributor 311 via the delivery conduits 456, 458, and 460 and operation of the valve 457. One or more other gas sources can be fluidly connected with the delivery conduit 458 via the manifold C 480, the delivery conduits 481 and 482, and selective operation of the valve 483. Operation of the valve 483 can be controlled, at least in part, by the flow controller 422 (e.g., a mass flow controller) and / or any other suitable control device or mechanism of or associated with the system 400 (e.g., the controller 425).

[0080] Returning to Figure 1 and 2 , the fluid break 131 is used, at least in part, to fluidly connect aspects of the fluid delivery system located within the first portion 105 with aspects of the fluid delivery system located within the second portion 107. As further shown in Figure 1 , 2 , 4, and 5, the fluid break 125 is located within the second portion 107 and is fluidly connected with the first delivery portion 400A of the fluid delivery system 400, and the fluid break 129 is located within the first portion 105 and is fluidly connected with the second delivery portion 400B of the fluid delivery system 400. In Figure 4In the diagram, the first delivery section 400A is depicted together with the fluid disconnector 125 in the second section 107. The depicted fluid disconnector 125 has four ports 125A-125D, each port connected to an aspect of the first delivery section 400A of the fluid delivery system 400, and each port configured to be fluidly connected to an aspect of the second delivery section 400B. Port 125A is fluidly connected to the delivery conduit 424 of the first delivery section 400A and is configured to mate with port 129A of the fluid disconnector 129 in the first section 105, and thus configured to fluidly connect port 125A to manifold A531, as shown below. Figure 5 As shown, it schematically illustrates, in some respects... Figure 1 This is another part of the gas and vapor delivery system of the semiconductor processing system. Port 125B is fluidly connected to the delivery conduit 497 of the first delivery section 400A and is configured to mate with port 129B of the fluid disconnector 129 within the first section 105, and is thus configured to fluidly connect port 125B to the vacuum manifold 520 (e.g., Figure 5 (As shown). Port 125C is fluidly connected to the delivery conduit 467 of the first delivery section 400A and is configured to mate with port 129C of the fluid disconnector 129 within the first section 105, and is thus configured to fluidly connect port 125C to manifold B507 (as shown). Figure 5 (As shown). Port 125D is fluidly connected to the delivery conduit 462 of the first delivery section 400A and is configured to mate with port 129D of the fluid disconnector 129 within the first section 105, and is thus configured to fluidly connect port 125D to the vacuum manifold 509 (as shown). Figure 5 (As shown).

[0081] Figure 5 A second delivery section 400B of the fluid delivery system 400 and a fluid disconnector 129 within the first section 105 are depicted. The fluid disconnector 129 has four ports 129A–129D, each configured to be fluidly connected to an aspect of the fluid delivery system. Port 129A is fluidly connected to manifold A531 and configured to be fluidly connected to port 125A of the fluid disconnector 125; port 129B is fluidly connected to vacuum manifold 520 and configured to be fluidly connected to port 125B of the fluid disconnector 125; port 129C is fluidly connected to manifold B507 and configured to be fluidly connected to port 125C of the fluid disconnector 125; and port 129D is fluidly connected to vacuum manifold 509 and configured to be fluidly connected to port 125D of the fluid disconnector 125.

[0082] like Figure 4 and Figure 5As further explained, manifold B507 is fluidly connected to delivery conduits 502 and 504 via valves 463, 465, and 505, ports 125C and 129C of fluid disconnectors 125 and 129, and delivery conduits 467 and 469, and to delivery conduit 454. In some cases, the operation of one or more of valves 463, 465, and 505 may be at least partially controlled by flow controller 501 (e.g., mass flow controller) and / or any other suitable control device or mechanism (e.g., controller 425) of or associated with system 400. Valve 465 may be part of junction 471 including node 473. In some cases, node 473 may not only be fluidly inserted between delivery conduits 467 and 469, but may also allow one or more cleaning gases to be delivered from remote plasma cleaning system 475 ( Figure 4 RPS475 in the fluid selectively flows into delivery conduit 454 via valve 477. Delivery conduit 454 can be selectively diverted to vacuum 509 by controlled operation of at least valve 479 and delivery conduit 462. In this way, vacuum 509 is fluidly connected to delivery conduit 462 via ports 125D and 129D of fluid disconnectors 125 and 129 and delivery conduits 513 and 515.

[0083] In some embodiments, valves 457 and 479 may be formed as part of a junction 490, which may be part of an adapter 491 having a conduit fitting 403 fluidly connected to a gas distributor 311. As previously mentioned, the conduit fitting 403 may be a tee fitting. The tee fitting may have a first inlet connected to a delivery conduit 458, a second inlet connected to a delivery conduit 492, and an outlet fluidly connected to the gas distributor 311 via a delivery conduit 460. In some cases, one or more gases may flow to the gas distributor 311 via manifold D493 and delivery conduit 492 through selective operation of valve 494. It is also noteworthy that delivery conduit 492 may be selectively diverted to a vacuum 520 through controlled operation of ports 125B and 129B of valves 494, 495, 496, and 521, delivery conduits 497, 523, and 524, and fluid disconnectors 125 and 129. The operation of one or more of valves 494, 495, 496, and 521 can be at least partially controlled by flow controller 402 (e.g., a mass flow controller) and / or any other suitable control device or mechanism (e.g., controller 425) of or associated with system 400. In some cases, the operation can be controlled from a remote plasma source system 498. Figure 4 The remote plasma of RPS498 can be selectively flowed to gas distributor 311 via delivery conduits 492 and 499 through selective operation of valve 420.

[0084] Selective operation of valves 495 and 530 can be used in conjunction with delivery conduits 424 and 492 to cause one or more gases to flow from manifold A 531 to gas distributor 311 via ports 125A and 129A of fluidic disconnects 125 and 129. As shown, delivery conduits 532 and 533 can fluidically connect manifold A 531 with port 129A of fluidic disconnect 129. In certain aspects, delivery conduits 523 and 532 can be fluidically connected to one another by selective operation of valve 540. In a similar manner, delivery conduits 502 and 515 can be fluidically connected to one another by selective operation of valve 550. Operation of one or more of valves 521, 530, and 540 can be controlled at least in part by flow controller 545 (e.g., a mass flow controller) and / or any other suitable control device or mechanism of or associated with system 400 (e.g., controller 425). Likewise, operation of one or more of valves 505, 511, and 550 can be controlled at least in part by flow controller 501 (e.g., a mass flow controller) and / or any other suitable control device or mechanism of or associated with system 400 (e.g., controller 425). Figure 5

[0085] Returning to Figure 3 In various embodiments, process and / or purge gases can exit processing chamber 101 through an exhaust port (or outlet) 321 fluidically coupled to, for example, a vacuum pump 323, which can be a one- or two-stage mechanical dry pump and / or a turbo molecular pump. In this manner, process and / or purge gases can be drawn from processing chamber 101 to maintain a suitably low pressure environment therein. To this end, a closed loop flow restriction device, such as a throttle valve or a flapper valve, can be controlled by control module 309 to further ensure a suitably low pressure environment in processing chamber 101.

[0086] According to some aspects, processing chamber 101 can further include one or more liners (or shrouds) that line one or more interior surfaces of processing chamber 101. The liners can be formed of a metal or metal alloy, such as aluminum or an aluminum alloy, although aspects are not so limited. The liners can be configured to be removed during servicing of processing chamber 101 to prevent (or at least reduce) the buildup of material (e.g., metallic material) on the walls of processing chamber 101. In some cases, processing chamber 101 can be arranged at least partially in a second configuration, such as shown in FIG. 5, to allow access to interior cavity region 109 to remove, replace, and / or clean the liners. Moreover, the one or more liners can be configured to reduce heat transfer into and out of the walls of processing chamber 101 to assist in stabilizing the internal temperature of processing chamber 101. Furthermore, the liners can act as a sacrificial layer that is configured to prevent (or reduce) damage to processing chamber 101. Figure 2 ​​

[0087] In various embodiments, system 300 can include or be in communication with a thermal system 325, which can be configured to actively control the temperature of one or more of pedestal 301, gas distributor 311, and break 131. In some cases, thermal system 325 can also be configured to actively control the temperature of one or more of gas supply manifold 317, fluid sources 315 and 316, etc. For example, thermal system 325 can be configured to control one or more aspects associated with one or more thermal control elements, e.g., heating elements, cooling conduits, and / or the like, of pedestal 301, gas distributor 311, fluid break 131, gas supply manifold 317, fluid sources 315 and 316, etc. In some embodiments, control module 309 can control the operation of thermal system 325, although aspects are not so limited.

[0088] Other aspects of processing chamber 101 and break 131 will now be discussed in greater detail in connection with Figures 1-12 .

[0089] Figure 7 A partially exploded perspective view of a portion of a processing chamber is schematically illustrated, including a fluid break in accordance with certain aspects. Figure 8 An exploded perspective view of a fluid break in accordance with certain aspects is schematically illustrated. Figure 7 An exploded perspective view of a fluid break in accordance with certain aspects is schematically illustrated. Figure 9 A partial perspective view of a first portion of a processing chamber in accordance with certain aspects is schematically illustrated. Figure 7 A partial perspective view of a first portion of a processing chamber in accordance with certain aspects is schematically illustrated. Figure 10 A front projection view of a first portion of a processing chamber in accordance with certain aspects is schematically illustrated. Figure 7 A front projection view of a first portion of a processing chamber in accordance with certain aspects is schematically illustrated. 9 A partial perspective view of a second portion of a processing chamber in accordance with certain aspects is schematically illustrated. Figure 11 A partial perspective view of a second portion of a processing chamber in accordance with certain aspects is schematically illustrated. Figure 7 A partial perspective view of a second portion of a processing chamber in accordance with certain aspects is schematically illustrated. Figure 12 A partial front projection view of a second portion of a processing chamber in accordance with certain aspects is schematically illustrated. Figure 7 A partial front projection view of a second portion of a processing chamber in accordance with certain aspects is schematically illustrated. 11 A partial front projection view of a second portion of a processing chamber in accordance with certain aspects is schematically illustrated.

[0090] Referring to Figures 1-12 , processing chamber 101 can include a first portion 105 and a second portion 107 that is movably engaged with first portion 105 in a first configuration (e.g., as illustrated in Figure 1 and Figure 7 ). In a second configuration (e.g., as illustrated in Figure 2The first and second portions 105 and 107 can be movable relative to one another, as shown in FIG. 1. For the purposes of the present disclosure, "movably engaged" can include tangential or coincident engagement (or abutment) between two or more components having mutually complementary shapes, enabling a physical interface between the two or more components to be engaged / disengaged, for example, when at least one of the two or more components is displaced relative to the other. For example, some processing chambers can include a movable top portion that can be lifted away from a lower chamber portion to allow access to the interior space. In view of this ability to separate the first portion 105 from the second portion 107 from one another, the processing chamber 101 can include one or more fluid disconnects, such as the fluid disconnect 131 having two components, the fluid disconnect 125 in the second portion 107 and the fluid disconnect 129 within the first portion 105, that allow the flow path of the system 400 across at least the split plane 104 of the processing chamber 101 to be fluidically connected and disconnected from one another.

[0091] When in the second configuration, the second portion 107 can be vertically offset from the first portion 105 by, for example, at least two inches, six inches, one foot, two feet, or three feet. In some embodiments, the second portion 107 can also be considered to be a top portion of a processing chamber that includes a multi-station processing chamber, such as the processing chamber 100 shown in FIG. 1. Figure 23 When in the second configuration, no processing operations are performed on a substrate, such as no flow of process gas to a substrate. When in the second configuration, the fluid disconnect 125 is fluidically disconnected from the fluid disconnect 129, resulting in the first delivery portion 400A being fluidically disconnected from the second delivery portion 400B. Although an atmospheric environment can provide a fluidic connection between the first delivery portion 400A and the second delivery portion 400B, for the purposes of the present disclosure, the first delivery portion 400A is considered to be fluidically disconnected from the second delivery portion 400B and fluidically isolated from one another when in the second configuration, despite any possible fluidic connection from the atmospheric environment.

[0092] In Figure 7 In accordance with some aspects, the fluid disconnects 125 and 129 can extend through or be associated with one or more spaces of the processing chamber 101, such as at least one of the regions 701 within the second portion 107 and the regions 703 and 705 within the first portion 105. Further in Figure 7 、 9In 10, region 701 may be a through-hole extending axially from a first (e.g., upper) surface 901 of the second portion 107 through a second (e.g., lower) surface 903 of the second portion 107, for example, extending in a direction parallel or substantially parallel to the Z-axis. At least one peripheral surface, such as a peripheral (e.g., front) surface 905, may extend between the first surface and the second surfaces 901 and 903. Region 701 may have dimensions 907, 909, and 1001 in the axial direction (e.g., on the x-axis), a first direction (e.g., on the y-axis), and a second direction (e.g., in the z-direction), respectively. The first and second directions may not only be transverse to the axial direction but may also be transverse to each other.

[0093] like Figure 9 As shown, the second portion 107 of the processing chamber 101 may further include an opening 911 extending along the first direction and fluidly connected to the region 701. The opening 911 may expose a portion of the fluid disconnector 125, allowing the fluid disconnector 125 to be accessed via, for example, a fastener 801 (such as...). Figure 8 (As shown) and structurally connected to the second part 107. In some cases, such as Figure 7 As shown, the second portion 107 can be formed to have an inner cavity region 913, which, together with the inner cavity region 109, can define a space (or enclosed area) including the process volume 313 in the first configuration between the first portion 105 and the second portion 107.

[0094] Turning Figure 7 , 11 In the first portion 105 of the processing chamber 101, a first region 703 and a second region 705 may be included, through which a portion of the fluid disconnector 129 may extend. In some cases, the first region 703 and the second region 705 may be grooves formed in the first surface 1101 of the first portion 105, respectively. The first surface 1101 of the first portion 105 may extend between a second surface 1103 and a third surface 1105, which may be opposite each other in the axial direction (along the z-axis). In some cases, the second surface 1103 of the first portion 105 may be in contact with the second surface 903 of the second portion 107, such as... Figure 7 A contact interface is formed in the first configuration of the processing chamber 101 shown. At least one fluid seal may be disposed between the respective second surfaces 1103 and 903 of the first portion 105 and the second portion 107 via at least one gasket disposed between the respective second surfaces 1103 and 903 of the first portion 105 and the second portion 107. For example, as Figure 11As shown, the second surface 1103 of the first portion 105 may include a first groove 1107 and a second groove 1109 configured to support the first and second gaskets therein. In some cases, the first groove 1107 and the second groove 1109 may be formed circumferentially around the inner cavity regions 109 and 913 of the processing chamber 101. It is also noteworthy that the first groove 1107 may be surrounded by the second groove 1109, and the inner cavity region 109 may include a first (e.g., lower) cavity region 1111 and a second (e.g., upper) cavity region 1113. Therefore, when the processing chamber 101 is configured in the first configuration, the first and second gaskets may be at least partially compressed within the first groove 1107 and the second groove 1109 and at least partially between the first portion 105 and the second portion 107 to form, for example, a fluid seal around the inner cavity regions 109 and 913.

[0095] like Figure 11 and 12 As shown, the first region 703 and the second region 705 can extend in the axial direction. The proximal ends of the first region 703 and the second region 705 can be fluidly connected to a third region 1201, which can be further recessed into the first portion 105 of the processing chamber 101 than the first region 703 and the second region 705. Therefore, the concave surface 1115 of the third region 1201 can be provided further away from the first surface 1101 of the first portion 105 than the concave surfaces 1117 and 1119 of the first region 703 and the second region 705. In this way, the resting surface 1121 can be formed at the transition between the third region 1201 and the first region 703 and the second region 705. The distal ends of the first region 703 and the second region 705 can be fluidly connected to a fourth region 1203, which can be further recessed into the first portion 105 than the third region 1201, but the implementation is not limited to this. In some configurations, a partition wall 1123 may be formed between the first region 703 and the second region 705, and thus each of the first region 703 and the second region 705 may be defined by at least three inner surfaces. For example, the first region 703 may be defined by a first inner surface 1125, a second inner surface 1127, and a concave surface 1117. In this way, each of the first region 703 and the second region 705 may have a first dimension 1205 extending in an axial direction, a second dimension 1129 extending in a first direction, and a third dimension 1207 extending in a second direction.

[0096] In some embodiments, the first through fourth regions 703, 705, 1201, and 1203 may be covered (or otherwise shielded) by a cover plate 709, which may be coupled (e.g., detachably coupled) to the first portion 105 by a plurality of fasteners (e.g., fasteners 711). The cover plate 709 may include a plurality of through-holes 713 through which the fasteners 711 extend and engage (e.g., threadedly engaged) with corresponding openings 1209 within the first portion 105 of the processing chamber 101. According to some aspects, the fluid disconnector 129 may be structurally connected to the spacer wall 1123 of the first portion 105 by, for example, a fastener 803.

[0097] See Figure 7 and Figure 8 The fluid disconnector 131 may include fluid disconnectors 125 and 129, which may be coupled to the second portion 107 and the first portion 105 of the processing chamber 101 via fasteners 801 and 803, respectively. Fluid disconnector 125 may include a disconnector 805 and portions of delivery conduits 424, 462, 467, and 497 extending therefrom; for example, these delivery conduits are also... Figure 4 , 6 Schematably depicted in 13 and 18. Fluid disconnector 129 may include a disconnector 807 and portions of delivery conduits 502, 515, 523, and 532 extending therefrom. Disconnector 807 may include ports 129A, 129B, 129C, and 129D that are fluidly connected to the corresponding delivery conduits 532, 523, 502, and 515. Similarly, disconnector 805 may include ports 125A, 125B, 125C, and 125D that are fluidly connected to the corresponding delivery conduits 424, 497, 467, and 462. When fluid disconnectors 125 and 129 are engaged together (see, for example...), Figure 7 One or more seals (e.g., seal 809) may be at least partially compressed between them and surround ports 125A-125D of disconnector 805, and thus surround ports 129A-129D of disconnector 807. Seal 809 may prevent or at least reduce the likelihood of leakage between fluid disconnectors 125 and 129.

[0098] According to some aspects, when the processing chamber 101 is set in the first configuration (such as...) Figure 1 In the configuration shown, the first surface 805a of the fluid disconnector 125 can contact and engage with the first surface 807a of the fluid disconnector 129 by fluidly connecting the respective delivery conduits of one fluid disconnector to the corresponding delivery conduits of other fluid disconnectors. For example, as shown Figure 8As shown, when the process chamber 101 is arranged in the first configuration and the first fluid break 125 is in contact with the second fluid break 129, the delivery conduits 532 and 424 are in fluid connection with each other, the delivery conduits 523 and 497 are in fluid connection with each other, the delivery conduits 502 and 467 are in fluid connection with each other, and the delivery conduits 515 and 462 are in fluid connection with each other. In some cases, the distal ends of the delivery conduits 424, 497, 467, 462, 532, 523, 502, and 515 can include respective quick disconnects 811 and 813, respectively, to allow the fluid break 131 to be relatively easily installed and / or replaced in the system 100.

[0099] According to certain aspects, when the process chamber 101 is to be opened, for example, to perform at least one maintenance procedure, one or more delivery conduits that can otherwise be exposed to the atmosphere of the surrounding environment can be configured to have a flow of purge gas to prevent the introduction of the atmosphere therein. This can include, for example, having a flow of purge gas through and out of aspects of the gas distributor 311 and the fluid break 131, for example, out of the ports of the fluid break 125 and 129. For example, as shown in FIGS. 13 and 19, a flow of purge gas out of the gas distributor 311 can be made by configuring the valves 483 and 494 to be in an open or partially open state to allow a flow of purge gas from the gas sources 480 and 493 along the delivery conduits 481, 482, 458, 460, and 492 and out of the gas distributor 311. The valves 494, 495, and 496 can also be configured to be in an open or partially open state to allow a flow of purge gas from the gas source 493 along the delivery conduits 492, 497, and 424 and out of the ports 125A and 125B of the fluid break 125. Depending on the type of gas chemistry that is typically flowed through the delivery conduits 492, 497, and 424, in certain embodiments, the valves 495 and 496 can not be opened, and purge gas can not be flowed out of the ports 125A and 125B of the fluid break 125. Figure 19 According to certain aspects, various operating states of the system of Figure 6 are schematically shown. However, as shown here, the valves 419, 461, 443, 455, 463, 465, and 479 can be configured to be in an open or partially open state to allow a flow of purge gas from the gas source 413 along the delivery conduits 449, 454, 462, 469, and 467 and out of the ports 125C and 125D of the fluid break 125.

[0100] Figure 16 According to certain aspects, various operating states of the system of Figure 5various operational states of the system. As shown here, the purge gas from manifolds A and B 531 and 507 can be allowed to flow out from ports 129A and 129B of fluid break 129 through valves 530 and 540 in an open or partially open state, and from ports 129C and 129D of fluid break 129 through valves 505 and 550 in an open or partially open state. Another illustration is Figure 14 , which shows concurrent purge gas flow from the first fluid break, second fluid break, and gas distributor of the apparatus when in the second configuration, according to some aspects. Figure 2 , which shows concurrent purge gas flow from the first fluid break, second fluid break, and gas distributor of the apparatus when in the second configuration, according to some aspects.

[0101] In some embodiments, after the processing chamber 101 is opened, the fluid breaks 125 and 129 can be capped off by respective caps 1501 and 1503, as shown in Figure 15 . Figure 15 shows another configuration of the apparatus when in the second configuration, according to certain aspects. This can also help reduce the likelihood of displacing too much oxygen around the processing chamber 101. Nonetheless, in some cases, the purge gas can be allowed to continue flowing into the various delivery conduits when the fluid breaks 125 and 129 are capped off and the processing chamber 101 remains in an open state. In some cases, however, the flow of purge gas can be terminated. In either embodiment, a pressurized environment can be maintained in the delivery conduits, which can help prevent or at least reduce the likelihood of atmospheric flow therein. In some cases, the delivery conduits can be pressurized to the facility's purge gas supply pressure. Figure 2

[0102] ​Depending on certain aspects, the flow of purge gas along delivery conduits 481, 482, 458, 460, 492, 497, 424, 449, 454, 469, 467, 462, 533, 532, and 523 may continue until a predetermined amount of time has elapsed after the processing chamber 101 has returned to the closed position. In some cases, once the processing chamber 101 is in the closed position, some pumps or evacuators in these delivery conduits can be evacuated by closing some valves and opening others to connect various aspects of the delivery system to a vacuum manifold or evacuation system. For example, valves 483, 494, 530, and 505 can be switched from an open or partially open state to a closed state, and valves 521 and 511 can be switched from a closed state to an open or partially open state to connect vacuum fluid to the delivery system, such as... Figure 17 , 21 As shown in Figure 22. Figure 17 It is illustrated in some respects Figure 5 The various operational states of the system. Figure 21 schematically shown Figure 5 The system is based on various operational states in certain aspects, and Figure 22 It is illustrated in some respects Figure 5 The system operates in various states. In some cases, purge gas from gas sources 413, 480, 493, 531, and 507 may continue to flow for a predetermined period of time to allow the removal of potential contaminants from the delivery conduits and processing chamber 101. At a later point, the purge gas flow from gas sources 413, 480, 493, 531, and 507 may be terminated, and the various delivery conduits (and in some cases, processing chamber 101) may be evacuated by connecting to vacuum 520, 509, and 604 and using one or more pumps (e.g., pump 323). Once the delivery conduits (and in some cases, processing chamber 101) have been adequately evacuated, valves 511 and 521 may return to the closed state. At this point, processing chamber 101 can be configured according to at least one semiconductor processing condition.

[0103] According to some embodiments, the reservoir 405 can be replaced to replenish the amount of precursor 409 stored therein, and thus, one or more delivery conduits that might otherwise be exposed to the ambient atmosphere when the reservoir 405 is removed from the system 401 can be isolated from the rest of the system 400 to prevent the introduction of atmosphere beyond the isolation valve. This isolation can be achieved by closing some valves and opening others in the delivery and steam delivery system to allow purge gas flow through aspects of the steam delivery device 401. For example, as Figure 18 , 19As shown in FIGS. 21, valves 419, 461, 443, 455 (associated with delivery conduit 449), 479, and 505 can be configured in an open or partially open state, and valves 602, 421, 441, 455 (associated with delivery conduit 451), 457, and 550 can be configured in a closed state, to enable purge gas from gas sources 413 and 507 to flow along delivery conduits 504, 502, 467, 469, 449, 454, and 462. Not only can the closing of valves 421 and 441 isolate the downstream delivery piping from the atmosphere, but the additional flow of purge gas along delivery conduits 449, 454, 462, 469, and 467 can also help prevent the introduction of the atmosphere therein. Notably, the flow of purge gas from gas sources 413 and 507 can be at least partially enabled for a predetermined amount of time prior to the removal of tank 405 from system 401, and in some cases, for a predetermined amount of time after the reconnection of tank 405 to system 401.

[0104] Once tank 405 is reconnected in system 401, valves 461 and 505 can be switched from an open or partially open state to a closed state, and valve 602 can be switched from a closed state to an open or partially open state. To this end, the flow of purge gas from gas sources 413 and 507 can be terminated. At some point thereafter, the various delivery conduits downstream of valve 461 can be pumped and their contents exhausted to vacuum 509, and the various delivery conduits upstream of valve 461 can be pumped and their contents can be exhausted to vacuum 604, for example, in accordance with at least one semiconductor processing condition. Figure 18 、 20 and 22. Once the various delivery piping is sufficiently evacuated, valves 511 and 602 can be returned to a closed state, and system 401 can be configured in accordance with at least one semiconductor processing condition.

[0105] Various fluids and gases can be caused to flow when the tool is in the first configuration and the second configuration. As provided herein, tool 100 includes a controller having instructions that cause the tool to perform actions, including causing gases and fluids to flow within, through, and out of the tool. Thus, semiconductor processing system 100 is configured to cause process gases and purge gases to flow through first portion 105, second portion 107, first delivery portion 400A, second delivery portion 400B, and various flow paths between these components and portions as provided herein. In certain embodiments, a flow path can be considered a passageway through which a fluid travels between two points via one or more delivery conduits and / or valves. For example, see Figure 4Another example flow path can span between port 125A of second fluid break 125 and gas distributor 311 and include delivery conduit 424, valve 495, delivery conduit 492, conduit fitting 403, and delivery conduit 460; fluid can flow from port 125A to gas distributor 311 along these elements.

[0106] In some embodiments, semiconductor processing system 100 is configured to, when in a first configuration of Figure 1 , flow process gas and / or fluid from first portion 105 to second portion 107 through fluid break 131 and its two components, fluid break 129 and second fluid break 125. In some embodiments, when in the first configuration, first portion 105 is fluidically connected to second portion 107 only through these fluid breaks, such that fluid breaks 125 and 129 provide the fluid connection between first portion 105 and second portion 107. For example, port 125A of fluid break 125 within first delivery section 400A can be fluidically connected to port 129A of fluid break 129 within second delivery section 400B, providing a fluid connection between first portion 105 and second portion 107.

[0107] In some embodiments, the instructions can be configured to cause fluid delivery system 400, when in the first configuration, to flow one or more first process gases along a first flow path through second fluid break 129 and through first delivery section 400A to gas distributor 311. This flow and flow path are partially shown in Figure 13A , which schematically illustrates, according to certain aspects, an operational state of a portion of the system of Figure 4 . The first flow path can stretch along delivery conduits, ports, and valves in both first delivery section 400A and second delivery section 400B. For example, see Figure 4 , 5 , 13A, and 16, the first flow path can stretch from a certain point within second delivery section 400B (e.g., manifold A 531 of Figure 16 ), and along delivery conduit 533, valve 530, delivery conduit 532 to and out of port 129A of fluid break 129, and continue into and through Figure 13Athrough the delivery conduit 460, and through and out of the gas distributor 311 within the first delivery section 400A. When in the first configuration and with this first flow path, process gas can flow from the manifold A and the first delivery section 400A to the gas distributor 311 along the first flow path. The first port 125A of the fluid break 125 (also referred to herein as a first fluid break) is fluidically connected to the second port 129A of the fluid break 129 (also referred to herein as a second fluid break) to provide a fluidic connection between the first delivery section 400A and the second delivery section 400B, and between the first portion 105 and the second portion 107.

[0108] As described herein, when the apparatus 100 is in the second configuration, it is desirable to flow purge gas out of one or more ports or openings from the first delivery section 400A and the second delivery section 400B simultaneously to prevent moisture and other contaminants from undesirably entering the fluid delivery system 400. As described herein, concurrent gas flow can be considered as two or more gas flows flowing simultaneously for at least a duration of time. For example, in some embodiments as shown in Figure 13B and Figure 14 In some embodiments, the semiconductor processing system 100 is configured to flow purge gas out of the ports of the fluid breaks 125 and 129, and in some instances, out of the gas distributor 311 simultaneously to prevent moisture from passing through these elements and into the fluid delivery system 400; in some cases, this can be considered as purge gas flowing out of the ports of the fluid breaks 125 and 129 simultaneously, and in some cases, out of the gas distributor 311 simultaneously. In Figure 13B In some embodiments, the semiconductor processing system 100 is configured to flow purge gas out of the ports of the fluid breaks 125 and 129, and in some instances, out of the gas distributor 311 simultaneously to prevent moisture from passing through these elements and into the fluid delivery system 400; in some cases, this can be considered as purge gas flowing out of the ports of the fluid breaks 125 and 129 simultaneously, and in some cases, out of the gas distributor 311 simultaneously. In Figure 4 In some embodiments, the semiconductor processing system 100 is configured to flow purge gas out of the ports of the fluid breaks 125 and 129, and in some instances, out of the gas distributor 311 simultaneously to prevent moisture from passing through these elements and into the fluid delivery system 400; in some cases, this can be considered as purge gas flowing out of the ports of the fluid breaks 125 and 129 simultaneously, and in some cases, out of the gas distributor 311 simultaneously. In

[0109] In some embodiments, to prevent undesirable moisture and contaminants from entering the fluid delivery system 400, the tool 100 is configured to cause the fluid delivery system to deliver purge gas along a first section of a first flow path within the first portion 105 and the first delivery section 400A, and through the first port 125A, as shown in Figure 13B and13C The first section of the first flowpath can have at least one delivery conduit fluidly coupled to the first port 125A. For example, the first section of the first flowpath can have a valve 495, a delivery conduit 424, and the port 125A such that purge gas flows through the delivery conduit 424 and out the port 125A. As shown in FIG. 13A, the second section of the first flowpath can have at least one delivery conduit fluidly coupled to the second port 129A. For example, the second section of the first flowpath can have a valve 530, a delivery conduit 532, a delivery conduit 533, and the port 129A such that purge gas flows out of the port 129A. In some cases, the same purge gas can flow out of the ports 125A and 129A simultaneously or at the same time, while in other cases, different purge gases can flow out of these ports simultaneously or at the same time. Figure 16 The tool 100 is configured to cause the fluid delivery system to deliver purge gas along the second section of the first flowpath within the first portion 105 and the second delivery portion 400B and through the port 129A simultaneously with the delivery of purge gas along the first section of the first flowpath, as shown in FIGS. 13B, 13C, and 13E. The second section of the first flowpath can have at least one delivery conduit fluidly coupled to the port 129A. For example, the second section of the first flowpath can have a valve 530, a delivery conduit 532, a delivery conduit 533, and the port 129A such that purge gas flows out of the port 129A. In some cases, the same purge gas can flow out of the ports 125A and 129A simultaneously or at the same time, while in other cases, different purge gases can flow out of these ports simultaneously or at the same time. Figure 14 The purge gas is depicted as flowing out of the first fluid break 125 and the second fluid break 129 simultaneously when in the second configuration.

[0110] The tool 100 is also configured to cause the fluid delivery system to vent purge gas from the gas distributor to prevent similar undesirable moisture and contaminants from entering the gas distributor and the first delivery portion 400A, as shown in FIGS. 13B, 13C, and 13E. To deliver one or more process gases to a substrate for a processing operation, the tool 100 is configured to deliver these process gases along the second flowpath to the gas distributor 311. In Figure 13B 13C and 13E. To deliver one or more process gases to a substrate for a processing operation, the tool 100 is configured to deliver these process gases along the second flowpath to the gas distributor 311. In Figure 4 and 13-E, the second flowpath can include a valve 494, a delivery conduit 492, a conduit junction 403, a delivery conduit 460, and the gas distributor 311. In the second configuration, the tool 100 is configured to cause the fluid delivery system to deliver purge gas along the second flowpath to and through the gas distributor 311 simultaneously with the delivery of purge gas along the first section of the first flowpath, as shown in FIGS. 13B, 13C, and 13E. Figure 13B 13C and 13E.

[0111] In some cases, the second and first flowpaths can overlap with each other, for example, such as Figure 4 ​​the first flow path and the second flow path, as shown in FIG. 4A, which schematically illustrates another operating state of portions of the system of FIG. 4A in accordance with certain aspects. Here, the purge gas is flowed along the second flow path, which includes the overlapping sections of the delivery conduit 492, the conduit junction 403, the delivery conduit 460, and the gas distributor 311, to the gas distributor 311, and along the section of the first flow path, specifically from the valve 495, through the conduit 424, and out and through the port 125A of the first fluid break 125. Figure 13C The third flow path is shown in FIG. 4B, which schematically illustrates another operating state of portions of the system of FIG. 4A in accordance with certain aspects. This third flow path can extend from a point in the second delivery portion 400B, such as the manifold B 507, and extend through the flow controller 501, the valve 505, the delivery conduits 504 and 502, and through and out the fourth port 129C, into the first delivery portion 400A through the third port 125C, through the delivery conduit 467, the valve 465, the delivery conduit 469, the valve 463, the delivery conduit 454, the delivery conduit 456, the valve 457, the delivery conduit 458, the conduit junction 403, the delivery conduit 460, and have another point at the gas distributor 311. Figure 13A The third flow path is shown in FIG. 4B, which schematically illustrates another operating state of portions of the system of FIG. 4A in accordance with certain aspects. This third flow path can extend from a point in the second delivery portion 400B, such as the manifold B 507, and extend through the flow controller 501, the valve 505, the delivery conduits 504 and 502, and through and out the fourth port 129C, into the first delivery portion 400A through the third port 125C, through the delivery conduit 467, the valve 465, the delivery conduit 469, the valve 463, the delivery conduit 454, the delivery conduit 456, the valve 457, the delivery conduit 458, the conduit junction 403, the delivery conduit 460, and have another point at the gas distributor 311.

[0112] In additional or alternative embodiments, the first fluid break 125 can have another port, such as the port 125C (which can also be considered a third port), and the second fluid break 129 can have another port, such as the port 129C (which can also be considered a fourth port), which are fluidly connected to each other in the first configuration. In this configuration, the ports 129C and 125D provide a second fluid connection between the first delivery portion 400A and the second delivery portion 400B. To perform a processing operation in the first configuration, the instructions of the tool 100 can be configured to cause the fluid delivery system 400 to deliver one or more process gases along a third flow path through the second fluid break 129 and through the first delivery portion 400A to the gas distributor 311. A portion of the third flow path is shown in FIG. 4B, which schematically illustrates another operating state of portions of the system of FIG. 4A in accordance with certain aspects. This third flow path can extend from a point in the second delivery portion 400B, such as the manifold B 507, and extend through the flow controller 501, the valve 505, the delivery conduits 504 and 502, and through and out the fourth port 129C, into the first delivery portion 400A through the third port 125C, through the delivery conduit 467, the valve 465, the delivery conduit 469, the valve 463, the delivery conduit 454, the delivery conduit 456, the valve 457, the delivery conduit 458, the conduit junction 403, the delivery conduit 460, and have another point at the gas distributor 311. Figure 13D The third flow path is shown in FIG. 4B, which schematically illustrates another operating state of portions of the system of FIG. 4A in accordance with certain aspects. This third flow path can extend from a point in the second delivery portion 400B, such as the manifold B 507, and extend through the flow controller 501, the valve 505, the delivery conduits 504 and 502, and through and out the fourth port 129C, into the first delivery portion 400A through the third port 125C, through the delivery conduit 467, the valve 465, the delivery conduit 469, the valve 463, the delivery conduit 454, the delivery conduit 456, the valve 457, the delivery conduit 458, the conduit junction 403, the delivery conduit 460, and have another point at the gas distributor 311. Figure 4 The third flow path is shown in FIG. 4B, which schematically illustrates another operating state of portions of the system of FIG. 4A in accordance with certain aspects. This third flow path can extend from a point in the second delivery portion 400B, such as the manifold B 507, and extend through the flow controller 501, the valve 505, the delivery conduits 504 and 502, and through and out the fourth port 129C, into the first delivery portion 400A through the third port 125C, through the delivery conduit 467, the valve 465, the delivery conduit 469, the valve 463, the delivery conduit 454, the delivery conduit 456, the valve 457, the delivery conduit 458, the conduit junction 403, the delivery conduit 460, and have another point at the gas distributor 311.

[0113] To cause purge gas to flow out of the third and fourth ports 125C and 129C when in the second configuration, the instructions of the tool can be configured to cause the fluid delivery system 400 to deliver purge gas through a section of the third flow path, such as valve 463, delivery conduit 469, valve 465, delivery conduit 467, and out of the outlet 125C of the first fluid break 125, as shown in Figure 13B and 13E wherein Figure 13E another operational state of portions of the system according to certain aspects is schematically depicted. The instructions can be further configured to cause the fluid delivery system 400 to deliver purge gas through a second section of the third flow path, such as through flow controller 501, valve 505, delivery conduits 504 and 502, and through and out of the fourth port 129C, as shown in Figure 13D . As shown, these purge gas flows can be performed simultaneously with other purge gas flows, such that purge gas flows out of the first port 125A, the second port 129A, the third port 125C, and the fourth port 129C simultaneously when in the second position. In certain cases, the same purge gas can flow out of both ports 125C and 129C simultaneously, while in other cases, different purge gases can flow out of these ports simultaneously. In some embodiments, each port of each fluid break can have one respective delivery conduit fluidly coupled thereto. Figure 16

[0114] In some embodiments, the fluid delivery system 400 includes a vacuum pump fluidly connected to the first delivery portion 400A and the second delivery portion 400B, and configured to pump to a base section of the system 400. For example, as shown in Figure 17 the vacuum manifold 520 fluidly connected to the vacuum pump is fluidly connected to the second port 129A of the second fluid break 129, and is configured to pump to the base delivery conduit 532 and the port 129A via at least the delivery conduit 524 and the valve 540. The delivery system 400 is further configured to fluidly connect the vacuum manifold 520 to the first section of the first flow path within the first delivery portion 400A, and thereby configured to pump the first section of the first flow path to a base when in the first configuration. For example, this includes pumping the delivery conduit 424 to the base through the first port 125A of the first fluid break 125, through the second port 129A of the second fluid break 129, through the delivery conduit 532, through the valve 540, and through the valve 521 to the vacuum manifold 520. The valve 530 can be closed to allow this pumping.

[0115] As shown in Figure 17 and 18 ​As further shown, the tool can be configured to pump other ports of the fluid disconnector, as well as any other flow path fluidly connected to the second delivery section 400B within the first delivery section 400A via fluid disconnectors 125 and 129, to the substrate. For example, the vacuum manifold 509 can pump a second section (including delivery conduit 467) of the third flow path fluidly connected to the third port 125C and the fourth port 129C within the first delivery section 400A to the substrate. Furthermore, as... Figure 18 As shown, it schematically illustrates, in some respects... Figure 4 In various operating states of the system, the vacuum manifold 509 can pump other delivery conduits (such as delivery conduits 462, 454, 449 and 469) to the substrate.

[0116] Tool 100 is also configured to prevent moisture and contaminants from entering the steam delivery device 401 by allowing purge gas to flow through the port of the steam delivery device 401 during removal of the reservoir 405 (e.g., during maintenance or refilling). Tool 100 is configured to cause the delivery system 400 to deliver the precursor to the gas distributor at least in part by: allowing a carrier gas flow from gas source 413 through valve 421 and reservoir inlet 417 into reservoir 405, and exiting reservoir 405 through outlet 437 (as described above, the precursor flows out of reservoir 405 along with the carrier gas), through valve 441, through junction 603, through outlet 439, and reaching gas distributor 311, as... Figure 6 As shown. This can be considered a fifth flow path. Figure 4 In the fifth flow path, the gas can continue through valve 455, delivery conduits 454 and 456, through valve 457, delivery conduit 458, conduit connector 403, delivery conduit 460, and gas distributor 311. When the storage tank is removed, during filling or other maintenance operations, the purging gas can flow along a portion of the fifth flow path without entering and passing through the storage tank, thereby preventing unwanted moisture and contaminants from entering the steam delivery device 401, such as... Figure 19 As shown. This may include allowing purge gas to flow through inlet 415, valve 461, junction 603, and out through outlet 439. During this purge gas flow, the purge gas does not flow through inlet 417. In some embodiments, other components of the flow path, such as valves or piping, may need to be removed or replaced, and during this removal, purge gas may similarly flow through the flow path fluidly connected to the removed component to prevent unwanted moisture or contaminants from entering the fluid delivery system. See also, for example, Figure 13C If valve 495 is removed for maintenance or replacement, gas may flow through its fluid connections, such as from manifold D493 through valve 494, conduit 492 and conduit 424 as shown, to prevent moisture or contaminants from entering these components of the fluid delivery system.

[0117] In some embodiments, the outlet 439 and the delivery conduit 449 of the vapor delivery device 401 can be fluidically connected to one or more ports of the first fluid break 125, such as ports 125C and 125D, as shown in Figure 13B and 13E The purge gas flowing through the vapor delivery device 401 shown in Figure 19 may continue to flow through the first delivery portion 400A and out of the port 125C of the fluid break, including along a portion of the fifth flow path shown in FIG. 13, such as the delivery conduit 449, the valve 455, the delivery conduit 454, the valve 479, the delivery conduit 462, and out of the access port 125D.

[0118] In certain embodiments, such concurrent purge gas flow does not occur during a processing operation, does not occur while the substrate is located in the processing chamber, or both. During a processing operation, process gas flows to the substrate during a first time interval. The purge gas flow out of the fluid breaks 125 and 129 occurs during a second time interval that is separate from the first time interval.

[0119] Multi-station processing tool Figure 23 A multi-station processing tool according to some aspects is schematically shown.

[0120] In some embodiments, the multi-station processing tool 2300 can include an in- station load lock 2303 and an out-station load lock 2305, one or both of which can include a plasma source and / or an ultraviolet (UV) source. A robot 2307 at atmospheric pressure is configured to move a box of wafers loaded through a pod 2309 through an atmospheric port 2311 to the in-station load lock 2303. The wafers 303 are placed by the robot 2307 on a pedestal 2313 in the in-station load lock 2303, the atmospheric port 2311 is closed, and then the in-station load lock 2303 is pumped down. In the case where the in-station load lock 2303 includes a remote plasma source, the wafers 303 can be exposed to a remote plasma treatment in the in-station load lock 2303 before being introduced into a process chamber 2315. In some aspects, the process chamber 101 can form a portion of the process chamber 2315. In addition, the wafers 303 can also be heated in the in-station load lock 2303, for example, to remove moisture and / or adsorbed gases. Then, a chamber transfer port 2317 to the process chamber 2315 is opened, and another robot 2319 places the wafers 303 on pedestals in the first station of the reactor (shown in the reactor) for processing. Although embodiments in Figure 23 include a load lock, it should be understood that in some embodiments, the wafers 303 can be brought directly into the processing stations.

[0121] As Figure 23As shown, the processing chamber 2315 includes four processing stations, numbered from 1 to 4. Each station has a temperature-controlled pedestal (e.g., temperature-controlled pedestal 2321 of station 1) and a gas line inlet. It should be appreciated that in some cases, each processing station can have different or multiple uses. For example, in some aspects, the processing stations can be switchable between chemical vapor deposition (CVD) and PECVD process modes. In another example, a deposition operation (e.g., a PECVD operation) can be performed in one station, and exposure to UV radiation for UV curing can be performed in another station. In some cases, deposition and UV curing can be performed in the same station. Further, although the processing chamber 2315 shown includes four stations, embodiments are not limited thereto. For example, the processing chamber 2315 can have any suitable number of stations, such as five or more stations, or three or fewer stations.

[0122] The multi-station processing tool 2300 can include a wafer handling system (e.g., robot 2319 including starwheel 2301) for transferring and / or positioning wafers within the processing chamber 2315. In some aspects, the wafer handling system can transfer wafers between the various processing stations and / or between the processing stations and the load locks. However, it is contemplated that any suitable wafer handling system can be employed, such as, for example, wafer carousels, other wafer handling robots, etc. Further, the multi-station processing tool 2300 can include (or otherwise be coupled to) a system controller 2323 for controlling process conditions and hardware states of the multi-station processing tool 2300. The system controller 2323 can include one or more memory devices 2325, one or more mass storage devices 2327, and one or more processors 2329. Each processor 2329 can include a central processing unit (CPU) or computer, analog and / or digital input / output connections, stepper motor controller boards, etc.

[0123] In some aspects, system controller 2323 controls each of the activities of multi-station processing tool 2300. For example, system controller 2323 can execute system control software 2331 stored in mass storage device 2327, loaded into memory device 2325, and executed by processor 2329. Alternatively, control logic can be hard coded into system controller 2323. Application specific integrated circuits (ASICs), programmable logic devices (such as field programmable gate arrays or FPGAs), and / or the like can be used for these purposes. In the following discussion, wherever "software" or "code" is used, functionally equivalent hardcoded logic can be used in its place. System control software 2331 can include instructions for controlling the relative displacement between first portion 105 and second portion 107, timing, gas mixtures, gas flow rates, flow conductance, temperatures of components forming a vapor phase delivery system (such as system 103), chamber and / or station pressure, chamber and / or station temperature, wafer temperature, target power levels, RF power levels, substrate pedestal, chuck, and / or susceptor position, and other parameters of the particular process being performed by multi-station processing tool 2300. For example, various processing tool component subroutines or control objects can be written to control the operation of processing tool components for performing various processing tool processes. System control software 2331 can be coded in any suitable computer readable programming language.

[0124] In some aspects, system control software 2331 can include input / output control (IOC) sequencing instructions for controlling the various parameters described above. In some aspects, other computer software and / or programs stored on mass storage device 2327 and / or memory device 2325 associated with system controller 2323 can be employed. Examples of programs or program segments for these purposes include substrate positioning programs, process gas control programs, valve control programs, pressure control programs, heater control programs, chiller control programs, and plasma control programs.

[0125] Substrate positioning programs can include program code for processing tool components for loading and positioning wafer 303 on pedestal 2321 and controlling the spacing between wafer 303 and other components of multi-station processing tool 2300.

[0126] A process gas control program can include code for controlling gas composition (e.g., silicon-containing gas, oxygen-containing gas, nitrogen-containing gas, dilution (or inert) gas, etc.), flow rate, flow conductance, and optionally for flowing gas into one or more processing chambers prior to deposition to stabilize pressure in the processing chamber. A process gas control program can additionally or alternatively include program code for controlling delivery of a gas phase precursor that can be in a solid or liquid phase under ambient temperature and pressure conditions. A pressure control program can include code to control pressure in the processing station by adjusting, for example, a throttle valve in an exhaust system of the processing station, gas flow into the processing station via a gas phase delivery system 103, and / or the like.

[0127] A heater control program can include program code for controlling current flow to one or more heating units for heating a susceptor (e.g., susceptor 2321) of a processing chamber 2315, a gas distributor (e.g., gas distributor 311), a conduit of a gas phase delivery system 103, and / or other components, and the like. Additionally or alternatively, a heater control program can control delivery of a thermally conductive gas (e.g., helium) to a gas distributor and thus to a wafer 303.

[0128] A chiller control program can include code for controlling flow rate of a conductive cooling fluid through a cooling unit for extracting heat from a susceptor (e.g., susceptor 2321) and / or a gas distributor (e.g., gas distributor 311) of a processing chamber 2315 and thus transferring such thermal energy to, for example, a waste heat capture, storage, recycling, and / or disposal system. Flow of the cooling fluid through the cooling unit can also extract heat from a wafer 303.

[0129] A plasma control program can include code for setting RF power levels applied to a processing electrode in one or more processing stations according to a number of aspects.

[0130] A pressure control program can include code for maintaining pressure within a reaction chamber according to a number of aspects.

[0131] In some aspects, there can be a user interface associated with the system controller 2323. The user interface can include a display screen, graphical software displays of apparatuses and / or process conditions, and user input devices (e.g., pointing devices, keyboards, touch screens, microphones, etc.).

[0132] In some aspects, parameters adjusted by the system controller 2323 can relate to process conditions. Non-limiting examples include process gas composition and flow rates, temperature, pressure, plasma conditions (e.g., RF bias power levels), pressure, temperature, etc. These parameters can be provided to a user in the form of a recipe, which can be input using a user interface.

[0133] Signals for monitoring the process can be provided from various process tool sensors via analog and / or digital input connections of system controller 2323. Signals for controlling the process can be output on analog and / or digital output connections of multi-station processing tool 2300. Non- limiting examples of process tool sensors that can be monitored include mass flow controllers, pressure gauges (e.g., manometers), thermocouples, etc. Appropriately programmed feedback and control algorithms can be used with data from these sensors to maintain process conditions.

[0134] System controller 2323 can provide program instructions to implement one or more of the processes described above. These program instructions can control various process parameters, such as direct current (DC) power levels, RF bias power levels, pressure, temperature, etc. These instructions can control these parameters in accordance with a number of aspects to operate deposition of a film stack of a stress compensation layer.

[0135] System controller 2323 will generally include one or more memory devices and one or more processors configured to execute the instructions such that the apparatus will perform a method in accordance with aspects. In some cases, a machine-readable medium containing instructions for controlling process operations in accordance with aspects can be coupled to system controller 2323.

[0136] In some aspects, system controller 2323 can be part of a system, which can be part of the above-described examples. Such systems can include semiconductor processing equipment, including one or more process tools, one or more chambers, one or more platforms for processing, and / or specific processing components (e.g., wafer pedestals, gas flow systems, thermal management systems, etc.). The systems discussed above can be integrated with electronics for controlling their operation before, during, and after processing of semiconductor wafers or substrates. The electronics can be referred to as the “controller,” which can control various components of one or more systems. For example, the system controller 2323 can be programmed to control any of the processes disclosed herein, including the delivery of processing gases, temperature settings (e.g., heating and / or cooling), valve operations, flow regulator operations, light source activation for radiant heating, pressure settings, vacuum settings, power settings, RF generator settings, RF matching circuit settings, frequency settings, flow rate settings, fluid delivery settings, position and operation settings, wafer transfer into and out of a tool or chamber and other transfer tools, and load locks connected or interfaced with a particular system. In this manner, the system controller 2323 can be configured to control various actuators and motors, as well as flow regulators of fluid delivery systems, among other things, of a backside wafer processing system between systems, among other things.

[0137] Broadly speaking, the system controller 2323 can be defined as electronics having various integrated circuits, logic, memory, and / or software that receive instructions, issue instructions, control operation, enable cleaning operations, enable endpoint measurements, and / or the like. The integrated circuits can include chips in the form of firmware that store program instructions, digital signal processors (DSPs), chips defined as application specific integrated circuits (ASICs), and / or one or more microprocessors, or microcontrollers that execute program instructions (e.g., software). Program instructions can be instructions (or sets of instructions) that are executed by the system controller 2323 to implement methodologies described herein, such as the operations illustrated in FIGS. 6-8. The program instructions can be encoded in various formats such as firmware, microcode, hardware description languages, and / or object codes. Program instructions can be furnished to the system controller 2323 via a program store 2325 (e.g., random access memory, read only memory, both, or other types of storage). Clearly, the system controller 2323 can include multiple ones of the above items, and these can be volatile or non-volatile, and / or removable or non-removable, and / or interrupt-driven via hardware, software, firmware, or combination thereof. The system controller 2323 can be a part of or coupled to a computer that is integrated with, coupled to the system, otherwise networked to the system, or a combination thereof. For example, the system controller 2323 can be in "the cloud" or all or a part of a fab host computer system, which can allow for remote access of the system to monitor current progress of fabrication operations, examine a history of past fabrication operations, examine trends or performance metrics from a plurality of fabrication operations, change parameters of current processing, set processing steps to follow in the current processing, or start new processes. The computer can enable remote access to the system to monitor current progress of fabrication operations, examine a history of past fabrication operations, examine trends or performance metrics from a plurality of fabrication operations, change parameters of current processing, set processing steps to follow in the current processing, or start new processes. In some examples, a remote computer (e.g., a server) can provide process recipes to a system over a network, which can include a local network or the Internet. The remote computer can include a user interface that enables entry or programming of parameters and / or settings, which are then transmitted to the system over the network. In some examples, the controller receives instructions in the form of data, which specify parameters for each of the processing steps to be performed during one or more operations. It should be understood that the parameters can be specific to a type of process being performed, and a type of tool that the controller is configured to interface with or control. Thus as described above, the system controller 2323 can be distributed, such as by including one or more standalone controllers that are networked together and working toward a common purpose, such as the processes and controls described herein. An example of a distributed controller for such a purpose would be one or more integrated circuits on a chamber in communication with one or more integrated circuits located off the chamber, such as in a mainframe computer that is part of a remote computer.

[0138] In some implementations, the system controller 2323 can be part of or coupled to a computer that is integrated within the system, coupled to the system, otherwise networked to the system, or a combination thereof. For example, the system controller 2323 can be in "the cloud" or all or a part of a fab host computer system, which can allow for remote access of the system to monitor current progress of fabrication operations, examine a history of past fabrication operations, examine trends or performance metrics from a plurality of fabrication operations, change parameters of current processing, set processing steps to follow in the current processing, or start new processes. The computer can enable remote access to the system to monitor current progress of fabrication operations, examine a history of past fabrication operations, examine trends or performance metrics from a plurality of fabrication operations, change parameters of current processing, set processing steps to follow in the current processing, or start new processes. In some examples, a remote computer (e.g., a server) can provide process recipes to a system over a network, which can include a local network or the Internet. The remote computer can include a user interface that enables entry or programming of parameters and / or settings, which are then transmitted to the system over the network. In some examples, the controller receives instructions in the form of data, which specify parameters for each of the processing steps to be performed during one or more operations. It should be understood that the parameters can be specific to a type of process being performed, and a type of tool that the controller is configured to interface with or control. Thus as described above, the system controller 2323 can be distributed, such as by including one or more standalone controllers that are networked together and working toward a common purpose, such as the processes and controls described herein. An example of a distributed controller for such a purpose would be one or more integrated circuits on a chamber in communication with one or more integrated circuits located off the chamber, such as in a mainframe computer that is part of a remote computer.

[0139] An exemplary system can include, but is not limited to, a plasma etch chamber or module, a deposition chamber or module, a spin-rinse chamber or module, a metal plating chamber or module, a clean chamber or module, a bevel edge etch chamber or module, a physical vapor deposition (PVD) chamber or module, a chemical vapor deposition (CVD) chamber or module, an atomic layer deposition (ALD) chamber or module, an atomic layer etch (ALE) chamber or module, an ion implantation chamber or module, a track chamber or module, and any other semiconductor processing systems that can be associated with or used in the fabrication and / or manufacturing of semiconductor wafers.

[0140] As described above, depending on the process step or steps to be performed by the tool, the system controller 2323 can communicate with one or more of other tool circuits or modules, other tool components, cluster tools, other tool interfaces, adjacent tools, neighboring tools, tools located throughout a factory, a main computer, another controller, and / or tools used in material transport that bring containers of wafers to and from tool locations and / or load ports in a semiconductor manufacturing factory.

[0141] Additional and / or alternative aspects Unless otherwise specified, the illustrated aspects are to be understood as providing exemplary features of variations of aspects. Thus, unless otherwise specified, features, components, modules, layers, films, regions, aspects, structures, etc. (hereinafter individually or collectively referred to as “elements”) of various figures can be combined, separated, interchanged, and / or rearranged without departing from the teachings of the present disclosure.

[0142] The terminology used herein is for the purpose of describing various aspects only and is not intended to be limiting. As used herein, the singular forms "a," "an," and "the" are intended to include the plural forms as well, unless the context clearly indicates otherwise. It will be understood that the terms "each," "every," and "each and every" when used herein in connection with one or more features can mean either a single item or a plurality of items, i.e., the meaning of the phrase "each of...," is meant to cover either a single item or a plurality of items in the group of items being referred to. For example, if the group of items is a single item, "each" would only refer to that single item (even though the dictionary definition of "each" is often defined as meaning "each of two or more things") and does not imply that there must be at least two of the items. Similarly, the terms "set" or "subset" should not be considered to necessarily include multiple items by themselves— it should be understood that a set or subset can include only one member or multiple members (unless the context indicates otherwise). The terms "comprises," "comprising," "includes," and / or "including," when used in this specification, specify the presence of stated features, integers, steps, operations, elements, components, and / or groups thereof, but do not preclude the presence or addition of one or more other features, integers, steps, operations, elements, components, and / or groups thereof. It should be noted that the terms "substantially," "approximately," and other similar terms, as used herein, are used as terms of approximation and not as terms of degree, and are therefore employed to account for inherent deviations in measurements, calculations, and / or provided values that would be appreciated by those of ordinary skill in the art. In this regard, the term "substantially" as used herein means within 5% of a referenced value, unless otherwise indicated. For example, substantially perpendicular means within ±5% of parallel.

[0143] Cross-hatching and / or shading in the drawings is generally used to indicate the presence of a contiguous element. As such, neither the presence nor the absence of cross-hatching or shading conveys or dictates any preference or requirement for particular materials, material properties, dimensions, proportions, commonality of the depicted elements, and / or any other characteristic, attribute, property, etc. of the elements, unless otherwise indicated. Further, in the drawings, the size and relative sizes of elements can be exaggerated for clarity and / or descriptive purposes. Thus, the dimensions and relative sizes of various elements can not be drawn to scale. When an aspect is described herein with the expression "comprising" or "including," it should be interpreted as using the expression "of the group of items consisting of" that has its ordinary meaning. That is, when using the expression "comprising" or "including" the items so listed after the comma are examples of the items that can, but need not, be present and does not exclude the presence of other items. When an aspect is described herein with the expression "each and every one of," it should be interpreted as using the expression "of the group of items consisting of" that has its ordinary meaning. That is, when using the expression "each and every one of," the items so listed after the comma are examples of the items that can, but need not, be present and does not exclude the presence of other items.

[0144] When an element (e.g., a layer) is referred to as being "on," "connected to," or "coupled to" another element, it can be directly on, connected, or coupled to the other element or one or more intervening elements can be present. Where, however, an element is referred to as being "directly on," "directly connected to," or "directly coupled to" another element, there are no intervening elements present. Other terms and / or phrases, if used herein, should be interpreted in a like fashion. For example, "between" and "directly between," "adjacent" and "directly adjacent," "on" and "directly on," etc. Further, the term "connected" can refer to physical, electrical, and / or fluidic connections. In this regard, for purposes of the present disclosure, the phrase "fluidic connection" is used in relation to volumes, plenums, holes, etc. that can be connected to one another to form a fluidic connection, similar to the phrase "electrical connection" being used in relation to components that are connected together to form an electrical connection. The phrase "fluidically interposed" (if used) can be used to refer to a component, volume, plenum, or hole that is fluidically connected to at least two other components, volumes, plenums, or holes, such that fluid flowing from one of these other components, volumes, plenums, or holes to another of these other components, volumes, plenums, or holes will flow through the "fluidically interposed" component before reaching the other of these components, volumes, plenums, or holes. For example, if a pump is fluidically interposed between a container and an outlet, fluid flowing from the container to the outlet will flow through the pump before reaching the outlet. The phrase "fluidically adjacent" (if used) can be used to refer to the placement of a fluidic element relative to another fluidic element such that no intervening structure between the two elements could potentially interrupt fluid flow between the two fluidic elements. For example, in a flow path in which a first valve, a second valve, and a third valve are disposed in that order along the flow path, the first valve will be fluidically adjacent to the second valve, the second valve will be fluidically adjacent to both the first valve and the third valve, and the third valve will be fluidically adjacent to the second valve.

[0145] For purposes of the present disclosure, "at least one of X, Y,... and Z" and "at least one selected from the group consisting of X, Y,... and Z" can be interpreted to include only X, only Y,... only Z, or any combination of two or more of X, Y,... and Z, e.g., XYZ, XYY, YZ, and ZZ. As used herein, the term "and / or" includes any and all combinations of one or more of the associated listed items.

[0146] Although the terms "first," "second," "third," etc. can be used herein to describe various elements, these elements should not be limited by these terms. These terms are used to distinguish one element from another. Thus, a first element discussed below could be termed a second element without departing from the teachings of the present application. As used in this application, the term "exemplary" is used to mean serving as an example, instance or illustration. Any implementation or embodiment described herein as "exemplary" is not necessarily to be construed as preferred or advantageous over other implementations or embodiments. The terms "comprises," "comprising," "includes," "including," "has," "having" and the like are used synonymously to denote a non- limiting inclusion. It should be understood that the terms "comprises," "comprising," "includes," "including," "has," "having" and the like are not used in a way that excludes other elements of materials from being added to or participating in the final product or method of manufacture, unless specifically indicated otherwise. The terms "coupled" and "coupling" mean to be directly connected to or in contact with, rather than indirectly, such as through an intermediate medium. The term "about" means approximate, as in "about 5 degrees," which includes 5 degrees plus or minus 0.1 degrees. The term "substantially" means largely, but not entirely, as in "substantially all," which means largely all, but not entirely all. The term "consisting essentially of means including, but not limited to, as in "consisting essentially of components A, B and C," which means including A, B and C, and not to other components. The term "consisting of means including, and limited by, as in "consisting of components A, B and C," which means only A, B and C.

[0147] Spatially relative terms, such as "beneath", "below", "lower", "under", "above", "upper", "over", "higher", "side" (as in "sidewall"), and the like, can be used herein for ease of description to describe one element or feature's relationship to another element(s) or feature(s) as illustrated in the figures. Spatially relative terms are intended to encompass different orientations of the device in use, operation, and / or manufacture in addition to the orientations depicted in the figures. For example, if a device in the figures is turned over, elements described as "below" or "beneath" other elements or features would then be oriented "above" or "over" the other elements or features. Thus, the term "below" can encompass both an orientation of above and below. The device can be otherwise oriented (e.g., rotated 90 degrees or at other orientations) and the spatially relative descriptors used herein interpreted accordingly.

[0148] The term "between" as used herein, and when used with a range of values, is understood to include the start and end values of the range, unless otherwise indicated. For example, between 1 and 5 is understood to include the numbers 1, 2, 3, 4, and 5, and not just the numbers 2, 3, and 4.

[0149] As used herein, the term "operably connected" when understood to refer to the state of two components and / or systems being connected (directly or indirectly) such that, for example, at least one component or system can control the other. For example, a controller can be described as being operably connected with (or operably connected to) a resistive heating unit, which includes the controller being connected with a sub-controller of the resistive heating unit, which is electrically connected with a relay configured to controllably connect or disconnect the resistive heating unit with a power source capable of providing an amount of power that can power the resistive heating unit to produce a desired degree of heating. The controller itself can not be able to directly supply such power to the resistive heating unit due to the current involved, but it should be understood that the controller is still operably connected with the resistive heating unit.

[0150] As used herein, the singular forms "a," "an," and "the" are intended to include the plural forms as well, unless the context clearly indicates otherwise. It will be understood that the terms "for each of the one or more <items>," "each of the one or more <items>," and / or the like, if used herein, encompass both a single group of items and a plurality of groups of items, i.e., the meaning of the phrase "for each of" is used in the vernacular language to refer to each item in the entire group of items referred to. For example, if the group of items referred to is a single item, then "each" would refer only to that single item (despite the fact that the dictionary definition of "each" is often defined as referring to "each of two or more things"), and would not imply that there must be at least two of the items. Similarly, the term "set" or "subset" should not be taken to necessarily include multiple items by itself - it should be understood that a set or subset can include only one member or multiple members (unless the context dictates otherwise). Furthermore, the terms "comprise," "comprising," "include," "including," and / or "contains," "containing," when used in this specification, specify the presence of stated features, integers, steps, operations, elements, components, and / or groups thereof, but do not preclude the presence or addition of one or more other features, integers, steps, operations, elements, components, and / or groups thereof.

[0151] Various aspects are described herein with reference to cross-sectional, topological, perspective and / or exploded illustrations that are schematic illustrations of idealized aspects and / or intermediate structures of the present aspects. As such, variations from the shapes of the illustrations as a result, for example, of manufacturing techniques and / or tolerances, are expected. Thus, the aspects disclosed herein are not to be construed as limited to the particular illustrated shapes of regions, etc., as such shapes are not intended to convey a meaning other than that described herein. To the contrary, the regions illustrated in the figures are schematic and are intended to represent an example of the regions that can be present in an actual device, and thus, the shapes of the regions shown in the figures should not be interpreted as limiting the scope of the present aspects.

[0152] Unless otherwise defined, all terms (including technical and scientific terms) used herein have the same meaning as commonly understood by one of ordinary skill in the art to which this application belongs. The terms, e.g., used in commonly-dictionary, should be interpreted as having a meaning that is consistent with their meaning in the context of the relevant art and not be interpreted in an idealized or overly formal sense unless expressly so defined herein.

[0153] In accordance with common practice, some portions of the detailed descriptions are presented in terms of functions, units and / or modules. One skilled in the art will recognize that these functions, units and / or modules can be implemented by hardware, software or a combination thereof. The various aspects can be implemented in hardware that can be appropriately configured to perform the functions, units and / or modules. For example, the hardware can include a combination of analog and digital circuits and other components, such as resistors, capacitors, inductors, transistors, logic gates, look-up tables, software, other storage and / or processing elements, or any combination thereof. In some aspects, the hardware can be implemented with a combination of a microprocessor or other processing element and digital and / or analog circuitry, which can be configured as described herein to perform the various functions, units and / or modules. In some aspects, the various functions, units and / or modules can be performed by one or more processors that execute software or firmware instructions.

[0154] While the foregoing aspects have been described in some detail for purposes of clarity and the specific embodiments herein disclosed have been shown by way of example, it is noted that various changes and modifications can be practiced within the scope of the appended claims. It is intended to cover all logical, equivalent, and / or substitute combinations of the elements features shown and described herein in conjunction with those features which are not specifically named in the claims.

Claims

1. A semiconductor processing apparatus comprising: The processing chamber has a first part and a second part, the first part having a first fluid disconnection having a first port and a gas distributor configured to distribute fluid into a process volume, and the second part having a second fluid disconnection having a second port. A fluid transport system having: Multiple gas source manifolds, A first delivery section, which is located within the first section and has a first delivery conduit fluidly coupled to the first port, and A second delivery section, which is located within the second section and has a second delivery conduit fluidly coupled to the second port; as well as The controller has one or more processors and one or more memories storing instructions for controlling the processing chamber and the fluid delivery system, wherein: The first portion is movably engaged with the second portion in a first configuration and separated from the second portion in a second configuration. In the first configuration, the first port of the first fluid disconnector is fluidly connected to the second port of the second fluid disconnector, thereby establishing a fluid connection between the first conveying section and the second conveying section. In the second configuration, the first fluid disconnector and the second fluid disconnector are fluidly disconnected, thereby causing the first conveying section to be fluidly disconnected from the second conveying section. The instructions are configured to cause the one or more processors to cause the fluid delivery system: When in the first configuration, one or more first process chemicals are directed along a first flow path, through the second fluid disconnector, and through the first delivery section to the gas distributor. The first flow path has a first section within the first delivery section and a second section within the second delivery section. The first section has at least the first delivery conduit, and the second section has at least the second delivery conduit. When in the second configuration: The first purge gas flows along the first section and through the first port, and While the first purge gas is flowing, the second purge gas is also flowing along the second section and through the second port.

2. The apparatus of claim 1, wherein the instructions are further configured to cause the one or more processors to cause the fluid delivery system: When in the first configuration, one or more second process gases flow along the second flow path through only the first delivery section to the gas distributor, and When in the second configuration, while the first purge gas and the second purge gas are flowing, the third purge gas is flowing along the second flow path and through the gas distributor.

3. The apparatus of claim 2, wherein the second flow path partially overlaps with the first segment of the first flow path within the first portion.

4. The apparatus of claim 3, wherein the instructions are further configured to cause the one or more processors to cause the fluid delivery system: The first valve along the second flow path is closed, and the one or more first process chemicals flow along the first flow path to the gas distributor, thereby fluidly isolating the upstream section of the second flow path from the overlapping section of the second and first flow paths. When the one or more second process gases flow along the second flow path to the gas distributor, the second valve along the first flow path is closed, thereby fluidly isolating the upstream section of the first flow path from the overlapping section of the second flow path and the first flow path.

5. The apparatus according to claim 3 or 4, wherein the third purge gas flows to the gas distributor along the overlapping section of the first flow path and the second flow path.

6. The apparatus according to any one of claims 1 to 5, wherein: The first fluid disconnect device has a third port. The second fluid disconnector has a fourth port. In the first configuration, the third port of the first fluid disconnector is fluidly connected to the fourth port of the second fluid disconnector, thereby establishing a second fluid connection between the first conveying section and the second conveying section. The instructions are also configured to cause the one or more processors to cause the fluid delivery system: When in the first configuration, one or more third process gases flow along a third flow path, through the second fluid disconnect and through the first delivery section to the gas distributor. The third flow path has a first section within the first delivery section and a second section within the second delivery section. The first section of the third flow path has at least a third delivery conduit fluidly coupled to the third port. The second section of the third flow path has at least a fourth delivery conduit fluidly coupled to the fourth port. When in the second configuration and the first purge gas and the second purge gas are flowing: The fourth purge gas flows along the first section of the third flow path and through the third port, and The fifth purge gas flows along the second section of the third flow path and through the fourth port.

7. The apparatus according to claim 6, wherein: The fourth purge gas is the first purge gas, and The fifth purging gas is the second purging gas.

8. The apparatus of claim 6 or 7, wherein the first section of the third flow path partially overlaps with the first section of the first flow path.

9. The apparatus according to any one of claims 1 to 8, wherein: The fluid delivery system further includes a vacuum pump, which is fluidly connected to the second port of the second fluid disconnector, and The instructions are also configured to cause the one or more processors to cause the fluid delivery system, when in the first configuration, to evacuate the first section of the first flow path through the first port and the second port.

10. The apparatus according to claim 9, wherein: The first fluid disconnector has a fifth port. The second fluid disconnector has a sixth port. In the first configuration, the fifth port of the first fluid disconnector is fluidly connected to the sixth port of the second fluid disconnector, thereby establishing a third fluid connection between the first conveying section and the second conveying section. The instructions are also configured to cause the one or more processors to cause the fluid delivery system, when in the first configuration, to evacuate the fourth flow path of the first delivery section within the first portion through the fifth port, the sixth port, and the second fluid disconnector.

11. The apparatus according to any one of claims 1 to 10, wherein: The fluid delivery system further includes a vapor delivery device having a reservoir for receiving precursors, an inlet, and an outlet, and the instructions are further configured to cause the one or more processors to cause the fluid delivery system to: The gas flows into the inlet and the gas and precursor flow out of the outlet along the fifth flow path and into the gas distributor. The sixth purge gas flows into the inlet and out of the outlet along the section of the fifth flow path without passing through the storage tank.

12. The apparatus according to claim 11, wherein: The first fluid disconnect device has a seventh port. The second fluid disconnector has an eighth port. In the first configuration, the seventh port of the first fluid disconnector is fluidly connected to the eighth port of the second fluid disconnector, thereby establishing a fourth fluid connection between the first conveying section and the second conveying section. The instructions are also configured to cause the one or more processors to cause the fluid delivery system, when in the second configuration, to flow the first purge gas and the second purge gas simultaneously: The sixth purge gas flows out of the outlet of the storage tank along the section of the fifth flow path and out of the seventh port, and The seventh purge gas flows through the second fluid disconnect and out of the eighth port.

13. The apparatus according to any one of claims 1 to 12, wherein, in the second configuration, the first portion and the second portion are offset relative to each other by at least one foot.

14. The apparatus according to any one of claims 1 to 13, wherein no processing operation is performed when in the second configuration.

15. The apparatus according to any one of claims 1 to 14, wherein the first portion is a removable top of a multi-station semiconductor processing apparatus.

16. The apparatus according to any one of claims 1 to 15, wherein: The one or more first process chemicals flow along the first flow path through the second fluid disconnector and through the first conveying section to the gas distributor during the first time interval. The first purge gas flows along the first section of the first flow path and passes through the first port during the second time interval of the second configuration in the first portion, and The second purge gas flows along the second section of the first flow path and through the second port in the second portion during the second time interval.

17. One or more non-transitory computer-readable media storing computer-executable instructions that, when executed by one or more processors of a semiconductor processing tool, cause the one or more processors to operate, the semiconductor processing tool comprising a processing chamber and a fluid delivery system, the processing chamber having a first portion and a second portion, the first portion having a first fluid disconnect having a first port and a gas distributor configured to deliver fluid into a process volume, and the second portion having a second fluid disconnect having a second port, the fluid delivery system having a plurality of gas source manifolds; a first delivery portion within the first portion and having a first delivery conduit fluidly coupled to the first port; and a second delivery portion within the second portion and having a second delivery conduit fluidly coupled to the second port, the operation being: This causes the first portion and the second portion to be in a first configuration, such that the first portion and the second portion are movably engaged, wherein in the first configuration, the first port of the first fluid disconnector is fluidly connected to the second port of the second fluid disconnector, thereby establishing a fluid connection between the first conveying portion and the second conveying portion. This results in the first portion and the second portion being in a second configuration separated from each other, wherein in the second configuration, the first fluid disconnector is fluidly disconnected from the second fluid disconnector, thereby causing the first conveying portion to be fluidly disconnected from the second conveying portion. Cause the fluid transport system to: When in the first configuration, one or more first process chemicals are directed along a first flow path, through the second fluid disconnector, and through the first delivery section to the gas distributor. The first flow path has a first section within the first delivery section and a second section within the second delivery section. The first section has at least the first delivery conduit, and the second section has at least the second delivery conduit. When in the second configuration: The first purge gas flows along the first section of the first flow path and through the first port, and While the first purge gas is flowing, the second purge gas is also flowing along the second section of the first flow path and through the second port.

18. The non-transitory computer-readable medium of claim 17, wherein the instructions are further configured to cause the one or more processors to cause the fluid delivery system: When in the first configuration, one or more second process gases flow along the second flow path through only the first delivery section to the gas distributor, and When in the second configuration, while the first purge gas and the second purge gas are flowing, the third purge gas is flowing along the second flow path and through the gas distributor.

19. The non-transitory computer-readable medium of claim 18, wherein the instructions are further configured to cause the one or more processors to cause the fluid delivery system: The first valve along the second flow path is closed, and the one or more first process chemicals flow along the first flow path to the gas distributor, thereby fluidly isolating the upstream section of the second flow path from the overlapping section of the second and first flow paths. When the one or more second process gases flow along the second flow path to the gas distributor, the second valve along the first flow path is closed, thereby fluidly isolating the upstream section of the first flow path from the overlapping section of the second flow path and the first flow path.

20. The non-transitory computer-readable medium according to any one of claims 17-19, wherein: The first fluid disconnect device has a third port. The second fluid disconnector has a fourth port. In the first configuration, the third port of the first fluid disconnector is fluidly connected to the fourth port of the second fluid disconnector, thereby establishing a second fluid connection between the first conveying section and the second conveying section. The instructions are also configured to cause the one or more processors to cause the fluid delivery system: When in the first configuration, one or more third process gases flow along a third flow path, through the fluid disconnect and through the first delivery section to the gas distributor. The third flow path has a first section within the first delivery section and a second section within the second delivery section. The first section of the third flow path has at least a third delivery conduit fluidly coupled to the third port. The second section of the third flow path has at least a fourth delivery conduit fluidly coupled to the fourth port. When in the second configuration and the first purge gas and the second purge gas are flowing: The fourth purge gas flows along the first section of the third flow path and through the third port, and The fifth purge gas flows along the second section of the third flow path and through the fourth port.

21. The non-transitory computer-readable medium according to any one of claims 17-20, wherein: The fluid delivery system further includes a vacuum pump, which is fluidly connected to the second port of the second fluid disconnector, and The instructions are also configured to cause the one or more processors to cause the fluid delivery system, when in the first configuration, to evacuate the first delivery portion of the first flow path to a vacuum through the first port and the second port.

22. The non-transitory computer-readable medium according to any one of claims 17-21, wherein: The first fluid disconnector has a fifth port. The second fluid disconnector has a sixth port. In the first configuration, the fifth port of the first fluid disconnector is fluidly connected to the sixth port of the second fluid disconnector, thereby establishing a third fluid connection between the first conveying section and the second conveying section. The instructions are also configured to cause the one or more processors to cause the fluid delivery system, when in the first configuration, to evacuate the fourth flow path of the first delivery section within the first portion through the fifth port, the sixth port, and the second fluid disconnector.

23. The non-transitory computer-readable medium according to any one of claims 17-22, wherein: The fluid delivery system further includes a vapor delivery device having a reservoir for receiving precursors, an inlet, and an outlet, and the instructions are further configured to cause the one or more processors to cause the fluid delivery system to: The gas flows into the inlet and the gas and precursor flow out of the outlet along the fifth flow path and into the gas distributor. The sixth purge gas flows into the inlet and out of the outlet without passing through the storage tank.

Images