A method and device for preparing a thin film resistor, an electronic device, and a storage medium

Abstract

The application provides a film resistor preparation method and device, electronic equipment and storage medium, including: performing chemical mechanical polishing on a wafer that has completed a copper interconnection process; depositing a dielectric material layer on the wafer that has been subjected to chemical mechanical polishing to form the dielectric material layer; processing a deformation prevention dielectric layer on the dielectric material layer; and processing a film resistor on the deformation prevention dielectric layer to form the film resistor. By processing a deformation prevention dielectric layer on the wafer surface before preparing the film resistor, the recesses and protrusions formed by chemical mechanical polishing are filled, deformation of the subsequent film resistor is avoided, and the uniformity of the film resistor is effectively improved.

Description

Technical Field

[0001] This application relates to the field of thin-film resistor fabrication technology, and in particular to a method, apparatus, electronic device, and storage medium for fabricating a thin-film resistor. Background Technology

[0002] Thin Film Resistors (TFRs) are widely used in integrated circuits due to their excellent thermodynamic stability. Generally, TFRs are quite thin, typically ranging from 10 Å to 200 Å (Å is a unit of length, angstrom). Therefore, high flatness is required during the fabrication of TFRs. Depressions and bumps in the front layer will affect the length and thickness of the TFR, consequently impacting its uniformity and stability, and ultimately its usability.

[0003] In the traditional fabrication process of thin-film resistors (TFRs), due to the differences in removal rates and hardness of different materials (e.g., Low-K dielectric, copper, tantalum / tantalum nitride), depressions and protrusions appear between different materials on the wafer after copper chemical mechanical polishing. Even though subsequent deposition of nitrogen-doped carbon (NDC) layers can alleviate the depressions and protrusions to some extent, it still affects the subsequently deposited resistor thin film layers. Summary of the Invention

[0004] In view of this, the purpose of this application is to provide at least one method, apparatus, electronic device and storage medium for preparing a resistor, by processing a deformation-resistant dielectric layer on the wafer surface before preparing the thin film resistor, filling the depressions and protrusions formed by chemical mechanical polishing, avoiding deformation of the thin film resistor in the subsequent process, and effectively improving the uniformity of the thin film resistor.

[0005] This application mainly includes the following aspects:

[0006] In a first aspect, embodiments of this application provide a method for preparing a thin-film resistor, the method comprising: chemically and mechanically polishing a wafer that has undergone copper interconnection processing; depositing a dielectric material layer on the chemically and mechanically polished wafer to form a dielectric material layer; processing an anti-deformation dielectric layer on the dielectric material layer; and processing a thin-film resistor on the anti-deformation dielectric layer to form a thin-film resistor.

[0007] In one possible implementation, a deformation-resistant dielectric layer is formed on a dielectric material layer by: depositing a deformation-resistant dielectric on the dielectric material layer to fill depressions formed on the dielectric material layer and cover protrusions formed on the dielectric material layer, thereby obtaining a deformation-resistant dielectric layer to be treated; and performing chemical mechanical polishing on the deformation-resistant dielectric layer to be treated, thereby obtaining a target deformation-resistant dielectric layer.

[0008] In one possible implementation, the thickness of the anti-deformation medium layer to be treated is between 200 angstroms and 2000 angstroms.

[0009] In one possible implementation, the deformation-resistant medium is silicon dioxide.

[0010] In one possible implementation, the thickness of the anti-deformation medium layer is between 50 angstroms and 500 angstroms.

[0011] In one possible implementation, the process of forming a thin-film resistor on a deformation-resistant dielectric layer includes: depositing a resistive material thin film with a given resistivity on the deformation-resistant dielectric layer to form a resistive thin-film layer; depositing a silicon nitride layer on the resistive thin-film layer; using photolithography, coating a photoresist layer onto the surface of the silicon nitride layer, and transferring the resistor pattern on the photomask onto the photoresist layer through exposure and development to form the desired photoresist window; and etching the resistive thin-film layer using the photoresist layer and the silicon nitride layer as a mask to obtain the desired thin-film resistor.

[0012] Secondly, embodiments of this application also provide an apparatus for preparing a thin-film resistor. The apparatus includes: a polishing module for performing chemical mechanical polishing on a wafer that has undergone copper interconnect processing; a dielectric material deposition module for depositing a dielectric material layer on the chemically mechanically polished wafer to form a dielectric material layer; a deformation-resistant processing module for processing a deformation-resistant dielectric layer on the dielectric material layer; and a thin-film resistor processing module for processing a thin-film resistor on the deformation-resistant dielectric layer to form a thin-film resistor.

[0013] In one possible implementation, the anti-deformation processing module is further configured to: deposit an anti-deformation medium on a dielectric material layer to fill depressions formed on the dielectric material layer and cover protrusions formed on the dielectric material layer, thereby obtaining an anti-deformation medium layer to be processed; and perform chemical mechanical polishing on the anti-deformation medium layer to be processed, thereby obtaining a target anti-deformation medium layer.

[0014] Thirdly, embodiments of this application also provide an electronic device, including: a processor, a memory, and a bus. The memory stores machine-readable instructions executable by the processor. When the electronic device is running, the processor and the memory communicate via the bus. The machine-readable instructions are executed by the processor to perform the steps of the thin-film resistor preparation method in the first aspect or any possible implementation of the first aspect.

[0015] Fourthly, embodiments of this application also provide a computer-readable storage medium storing a computer program, which, when executed by a processor, performs the steps of the thin-film resistor preparation method in the first aspect or any possible implementation of the first aspect.

[0016] This application provides a method, apparatus, electronic device, and storage medium for fabricating a thin-film resistor, comprising: chemically and mechanically polishing a wafer that has undergone copper interconnect processing; depositing a dielectric material layer on the chemically and mechanically polished wafer to form a dielectric material layer; processing an anti-deformation dielectric layer on the dielectric material layer; and processing a thin-film resistor on the anti-deformation dielectric layer to form a thin-film resistor. By processing an anti-deformation dielectric layer on the wafer surface before fabricating the thin-film resistor, the depressions and protrusions formed by chemically and mechanically polishing are filled, preventing subsequent deformation of the thin-film resistor and effectively improving the uniformity of the thin-film resistor.

[0017] To make the above-mentioned objectives, features and advantages of this application more apparent and understandable, preferred embodiments are described below in detail with reference to the accompanying drawings. Attached Figure Description

[0018] To more clearly illustrate the technical solutions of the embodiments of this application, the accompanying drawings used in the embodiments will be briefly introduced below. It should be understood that the following drawings only show some embodiments of this application and should not be regarded as a limitation of the scope. For those skilled in the art, other related drawings can be obtained based on these drawings without creative effort.

[0019] Figure 1 This illustration shows a schematic diagram of a conventional fabrication process for a thin-film resistor (TFR) according to an embodiment of this application.

[0020] Figure 2 This diagram illustrates the deformation effect of thin-film resistors (TFRs) under conventional manufacturing processes.

[0021] Figure 3 One of the flowcharts for a method of preparing a thin-film resistor according to an embodiment of this application is shown;

[0022] Figure 4 This illustration shows a schematic diagram of a thin-film resistor fabrication method provided in an embodiment of this application.

[0023] Figure 5 A second flowchart of a method for preparing a thin-film resistor according to an embodiment of this application is shown;

[0024] Figure 6 A functional block diagram of a thin-film resistor fabrication apparatus provided in an embodiment of this application is shown;

[0025] Figure 7 A schematic diagram of the structure of an electronic device provided in an embodiment of this application is shown. Detailed Implementation

[0026] To make the objectives, technical solutions, and advantages of the embodiments of this application clearer, the technical solutions of the embodiments of this application will be clearly and completely described below with reference to the accompanying drawings. It should be understood that the drawings in this application are for illustrative and descriptive purposes only and are not intended to limit the scope of protection of this application. Furthermore, it should be understood that the schematic drawings are not drawn to scale. The flowcharts used in this application illustrate operations implemented according to some embodiments of this application. It should be understood that the operations in the flowcharts may not be implemented in sequence, and steps without logical contextual relationships may be reversed or implemented simultaneously. In addition, those skilled in the art, guided by the content of this application, may add one or more other operations to the flowcharts, or remove one or more operations from the flowcharts.

[0027] Furthermore, the described embodiments are merely some, not all, of the embodiments of this application. The components of the embodiments of this application described and illustrated herein can typically be arranged and designed in various different configurations. Therefore, the following detailed description of the embodiments of this application provided in the accompanying drawings is not intended to limit the scope of the claimed application, but merely to illustrate selected embodiments of the application. All other embodiments obtained by those skilled in the art based on the embodiments of this application without inventive effort are within the scope of protection of this application.

[0028] Please see Figure 1 , Figure 1 A schematic diagram of a conventional fabrication process for a thin-film resistor (TFR) according to an embodiment of this application is shown. Please refer to... Figure 2 , Figure 2 A schematic diagram illustrating the deformation effect of thin-film resistors (TFRs) under conventional fabrication processes is shown. Figure 1 and Figure 2 As shown, the traditional fabrication process of thin-film resistors (TFRs) is as follows:

[0029] S11. Perform chemical mechanical polishing on the wafers that have completed the copper interconnect process.

[0030] Specifically, in copper interconnect processes, low-k dielectric materials (e.g., carbon-doped silicon oxide SiCOH) are typically used to deposit interlayer dielectrics (ILDs) on the wafer surface. Then, photoresist is coated on the dielectric layer, and the pattern of the conductors is defined by photolithography. Further, trenches and / or vias are etched in the dielectric layer, and copper is deposited in the trenches and / or vias. The copper deposition process includes: first, depositing a diffusion barrier layer (typically tantalum Ta / tantalum nitride TaN or ruthenium Ru) in the trenches and / or vias; then sputtering a seed layer (typically copper Cu) on the diffusion barrier layer; and finally, using the principle of electrochemical deposition, filling the trenches and / or vias processed on the wafer surface with copper metal.

[0031] After completing the copper interconnect process on the wafer as described above, step S11 is performed to obtain a flat surface in preparation for the subsequent deposition of a resistive thin film.

[0032] S12. Deposit a dielectric material layer on the surface of a wafer that has undergone chemical mechanical polishing.

[0033] Specifically, a dielectric material layer NDC (nitrogen-doped carbon) is deposited on the surface of the wafer after chemical mechanical polishing. Its function is to serve as a subsequent etch stop layer or diffusion barrier layer.

[0034] S13. Deposit a resistive thin film on the dielectric material layer.

[0035] Specifically, a resistive thin film with a given resistivity is deposited on top of the dielectric material layer NDC using methods such as physical vapor deposition (PVD) or chemical vapor deposition (CVD) to form a resistive thin film layer.

[0036] S14. Deposit silicon nitride on the resistive thin film layer to form a silicon carbide layer.

[0037] Specifically, a silicon nitride (SiN) layer is deposited on top of the resistive thin film layer. This silicon nitride layer is typically used as a hard mask for subsequent patterning etching processes.

[0038] S15. The resistor pattern on the photomask is transferred to the wafer surface through photolithography.

[0039] Specifically, photolithography is used to coat photoresist onto the wafer surface, and through exposure and development, the resistive pattern on the mask is transferred onto the photoresist layer to form the desired photoresist window.

[0040] S16. Etch the resistive thin film layer to obtain the desired thin film resistor.

[0041] Specifically, using a photoresist layer and a silicon nitride layer as masks, the resistive thin film layer is etched using dry or wet methods to remove the unprotected resistive material portion, ultimately forming a thin film resistor that meets the design requirements.

[0042] In the conventional process flow of the thin film resistor TFR shown in steps S11 to S16 above, chemical mechanical polishing can easily cause depressions and protrusions. Even if the subsequent deposition of dielectric material layer NDC can alleviate the depressions and protrusions to a certain extent, it still affects the subsequently deposited resistor thin film layer. The specific effects include bending deformation and thinning of protrusions.

[0043] like Figure 2 As shown, through analysis of wafer slicing and process, it was determined that in the chemical mechanical polishing (CMP) process, due to the differences in removal rate and hardness of different materials on the wafer surface after copper interconnect processing (exemplary examples include Low-K materials, copper interconnect structures and copper Cu in the seed layer, and tantalum TA / tantalum nitride TAN in the diffusion barrier layer), depressions and protrusions will appear between different materials on the wafer after the CMP process. Even if a dielectric material layer NDC is deposited, these depressions and protrusions cannot be repaired.

[0044] Specifically, thin-film resistors (TFRs) are typically only a few nanometers thick. When the wafer is chemically and mechanically polished, resulting in depressions, the subsequently deposited resistor film layer bends and elongates at the depressions, thus forming deformation. In another case, the subsequently deposited resistor film layer becomes thinner at the protrusions of the diffusion barrier layer and seed layer, resulting in step protrusions. Both of these situations reduce the flatness of the surface of the subsequently formed TFR, thereby affecting the performance of the TFR.

[0045] Due to the characteristics of chemical mechanical polishing (CMP), different materials (such as low-k dielectric, copper, and tantalum / tantalum nitride) have different removal rates. Therefore, the depressions and protrusions generated after CMP cannot be completely eliminated. Moreover, due to the variability of CMP, the depressions and protrusions in different areas within the same wafer and between different wafers are different, which ultimately exacerbates the non-uniformity of the thin-film resistor (TFR).

[0046] Based on this, embodiments of this application provide a method, apparatus, electronic device, and storage medium for preparing a thin-film resistor. By processing a deformation-resistant dielectric layer on the wafer surface before preparing the thin-film resistor, the depressions and protrusions formed by chemical mechanical polishing are filled, preventing subsequent deformation of the thin-film resistor and effectively improving the uniformity of the thin-film resistor, as detailed below:

[0047] Please see Figure 3 , Figure 3 This document illustrates one of the flowcharts for a method of fabricating a thin-film resistor according to an embodiment of this application. For example... Figure 3 As shown, the method for preparing a thin-film resistor provided in this application includes the following steps:

[0048] S100. Perform chemical mechanical polishing on the wafers that have completed the copper interconnect process.

[0049] S200: A dielectric material layer is deposited on the chemically mechanically polished wafer to form a dielectric material layer.

[0050] S300, A deformation-resistant dielectric layer is formed on the dielectric material layer.

[0051] S400: Thin film resistors are formed by processing a thin film resistor on a deformation-resistant dielectric layer.

[0052] Please see Figure 4 , Figure 4 A schematic diagram of a thin-film resistor fabrication method provided in an embodiment of this application is shown.

[0053] In steps S100 to S400 of this application, in order to improve the problem of bending elongation and protrusion thinning of the thin-film resistor TFR caused by the depressions and protrusions resulting from the chemical mechanical polishing (CMP) process, this application introduces a method such as... between the resistive thin film layer and the dielectric material layer NDC during the manufacturing process of the conventional thin-film resistor TFR. Figure 4 The deformation-resistant dielectric layer shown fills the depressions and protrusions caused by the chemical mechanical polishing (CMP) process. This allows for the deposition of a resistive thin film layer on the deformation-resistant dielectric layer without resulting in bending or protrusion deformation. Figure 6 As shown, this can effectively improve the uniformity of thin film resistance.

[0054] The copper interconnect process is as described above and will not be repeated here.

[0055] In a preferred embodiment, in step S200, for example, the dielectric material layer NDC is mainly composed of nitrogen-doped silicon carbide, which generally serves as an interlayer barrier / etch stop layer. In this application, it can fill in some of the depressions caused by the chemical mechanical polishing (CMP) process.

[0056] In a preferred embodiment, step S300 includes:

[0057] Deformation-resistant dielectric is deposited on the dielectric material layer NDC to fill the depressions formed on the dielectric material layer NDC and cover the protrusions formed on the dielectric material layer, thus obtaining the deformation-resistant dielectric layer to be treated. The deformation-resistant dielectric layer to be treated is then chemically and mechanically polished to obtain the target deformation-resistant dielectric layer.

[0058] In one specific example, the anti-deformation medium is silicon dioxide (SiO2).

[0059] In another specific embodiment, the thickness of the deposited anti-deformation dielectric layer is between 200 Å and 2000 Å (Å is the unit of length angstrom), wherein the thickness of the anti-deformation dielectric layer at different locations is appropriately adjusted according to the depressions and protrusions on the dielectric material layer NDC.

[0060] In this application, after the deposition of the anti-deformation medium layer is completed, a chemical mechanical polishing (CMP) process is added to the anti-deformation medium layer. During the chemical mechanical polishing process of the anti-deformation medium layer, since the anti-deformation medium layer is made of the same material, it will not cause depressions or protrusions.

[0061] After the anti-deformation dielectric layer is treated with a chemical polishing process, the thickness of the resulting target anti-deformation dielectric layer is in the range of 50 Å to 500 Å. Subsequent fabrication of thin-film resistors on this target anti-deformation dielectric layer will not result in bending or protrusion deformation. (See reference for details.) Figure 4 The resistive thin film layer shown can effectively improve the uniformity of the resistance of the subsequently generated thin film.

[0062] In a preferred embodiment, please refer to Figure 5 , Figure 5 A second flowchart illustrating a method for fabricating a thin-film resistor according to an embodiment of this application is shown. Figure 5 As shown, step S400 further includes:

[0063] S4001. A resistive material thin film with a given resistivity is deposited on the anti-deformation dielectric layer to form a resistive thin film layer.

[0064] S4002, Deposit a silicon nitride layer on the resistive thin film layer.

[0065] S4003. Using photolithography, photoresist is coated on the surface of a silicon nitride layer, and through exposure and development, the resistive pattern on the mask is transferred onto the photoresist layer to form the desired photoresist window.

[0066] S4004. Using a photoresist layer and a silicon nitride layer as masks, the resistive thin film layer is etched to obtain the desired thin film resistor.

[0067] In summary, this application provides a method for preparing thin-film resistors to improve the uniformity of the thin-film resistor TFR. The method provided in this application can largely eliminate the adverse effects of the thin-film resistor bending and elongation and the protrusion thinning caused by the depressions and protrusions after the wafers that have completed the copper interconnect process are chemically and mechanically polished, thereby greatly improving the uniformity and stability of the thin-film resistor TFR.

[0068] Based on the same concept, this application also provides a thin film resistor preparation apparatus corresponding to the thin film resistor preparation method provided in the above embodiments. Since the principle of the apparatus in this application is similar to the thin film resistor preparation method in the above embodiments of this application, the implementation of the apparatus can refer to the implementation of the method, and the repeated parts will not be described again.

[0069] Please see Figure 6 , Figure 6 A functional block diagram of a thin-film resistor fabrication apparatus provided in an embodiment of this application is shown. Figure 6 As shown, the device includes:

[0070] Polishing module 500 is used for chemical mechanical polishing of wafers that have completed copper interconnect processes;

[0071] The dielectric material deposition module 510 is used to deposit a dielectric material layer on a wafer that has undergone chemical mechanical polishing to form a dielectric material layer;

[0072] The anti-deformation processing module 520 is used to process an anti-deformation dielectric layer on a dielectric material layer;

[0073] Thin film resistor processing module 530 is used to process thin film resistors on a deformation-resistant dielectric layer to form a thin film resistor.

[0074] Preferably, the anti-deformation processing module 520 is further used to: deposit an anti-deformation medium on the dielectric material layer to fill the depressions formed on the dielectric material layer and cover the protrusions formed on the dielectric material layer, thereby obtaining an anti-deformation medium layer to be processed; and perform chemical mechanical polishing on the anti-deformation medium layer to be processed, thereby obtaining the target anti-deformation medium layer.

[0075] Based on the same application concept, please refer to Figure 7 , Figure 7 A schematic diagram of the structure of an electronic device provided in an embodiment of this application is shown. Figure 7 As shown, the electronic device 60 includes a processor 601, a memory 602, and a bus 603. The memory 602 stores machine-readable instructions that can be executed by the processor 601. When the electronic device 60 is running, the processor 601 and the memory 602 communicate through the bus 603. The machine-readable instructions are executed by the processor 601 to perform the steps of the thin-film resistor preparation method provided in any of the above embodiments.

[0076] Based on the same concept, this application also provides a computer-readable storage medium storing a computer program, which, when run by a processor, executes the steps of the thin-film resistor preparation method provided in the above embodiments.

[0077] Those skilled in the art will clearly understand that, for the sake of convenience and brevity, the specific working processes of the systems and devices described above can be referred to the corresponding processes in the foregoing method embodiments, and will not be repeated here. In the several embodiments provided in this application, it should be understood that the disclosed systems, devices, and methods can be implemented in other ways. The device embodiments described above are merely illustrative. For example, the division of units is only a logical functional division; in actual implementation, there may be other division methods. Furthermore, multiple units or components may be combined or integrated into another system, or some features may be ignored or not executed. Another point is that the displayed or discussed mutual coupling or direct coupling or communication connection may be through some communication interfaces; the indirect coupling or communication connection of devices or units may be electrical, mechanical, or other forms.

[0078] The units described as separate components may or may not be physically separate. The components shown as units may or may not be physical units; that is, they may be located in one place or distributed across multiple network units. Some or all of the units can be selected to achieve the purpose of this embodiment according to actual needs.

[0079] In addition, the functional units in the various embodiments of this application can be integrated into one processing unit, or each unit can exist physically separately, or two or more units can be integrated into one unit.

[0080] If the aforementioned functions are implemented as software functional units and sold or used as independent products, they can be stored in a processor-executable, non-volatile, computer-readable storage medium. Based on this understanding, the technical solution of this application, in essence, or the part that contributes to the prior art, or a part of the technical solution, can be embodied in the form of a software product. This computer software product is stored in a storage medium and includes several instructions to cause a computer device (which may be a personal computer, server, or network device, etc.) to execute all or part of the steps of the methods described in the various embodiments of this application. The aforementioned storage medium includes various media capable of storing program code, such as USB flash drives, portable hard drives, read-only memory (ROM), random access memory (RAM), magnetic disks, or optical disks.

[0081] The above are merely specific embodiments of this application, but the scope of protection of this application is not limited thereto. Any variations or substitutions that can be easily conceived by those skilled in the art within the scope of the technology disclosed in this application should be included within the scope of protection of this application. Therefore, the scope of protection of this application should be determined by the scope of the claims.

Claims

1. A method for preparing a thin-film resistor, characterized in that, The method includes: Chemical mechanical polishing is performed on wafers that have completed copper interconnect processes; A dielectric material layer is deposited on a wafer that has undergone chemical mechanical polishing to form a dielectric material layer; A deformation-resistant dielectric layer is formed on the dielectric material layer; Thin-film resistors are fabricated on the deformation-resistant dielectric layer to form thin-film resistors. The deformation-resistant dielectric layer is formed on the dielectric material layer by the following method: Deformation-resistant dielectric is deposited on the dielectric material layer to fill the depressions formed on the dielectric material layer and cover the protrusions formed on the dielectric material layer, thereby obtaining the deformation-resistant dielectric layer to be treated. The thickness of the deformation-resistant dielectric layer at different locations is appropriately adjusted according to the depressions and protrusions on the dielectric material layer. The anti-deformation medium layer to be treated is subjected to chemical mechanical polishing to obtain the target anti-deformation medium layer; The thickness of the anti-deformation medium layer to be treated is between 200 angstroms and 2000 angstroms, and the thickness of the anti-deformation medium layer is between 50 angstroms and 500 angstroms.

2. The method according to claim 1, characterized in that, The deformation-resistant medium is silicon dioxide.

3. The method according to claim 1, characterized in that, The step of forming a thin-film resistor by processing a thin-film resistor on the deformation-resistant dielectric layer includes: A resistive material thin film with a given resistivity is deposited on the anti-deformation dielectric layer to form a resistive thin film layer; A silicon nitride layer is deposited on the resistive thin film layer; Photolithography is used to coat photoresist onto the surface of a silicon nitride layer. Through exposure and development, the resistive pattern on the photomask is transferred onto the photoresist layer to form the desired photoresist window. The resistive thin film layer is etched using a photoresist layer and a silicon nitride layer as masks to obtain the desired thin film resistor.

4. An apparatus for preparing a thin-film resistor, characterized in that, The device includes: The polishing module is used to perform chemical mechanical polishing on wafers that have completed copper interconnect processes; The dielectric material deposition module is used to deposit dielectric material layers on wafers that have undergone chemical mechanical polishing to form dielectric material layers; A deformation-resistant processing module is used to process a deformation-resistant dielectric layer on the dielectric material layer; A thin-film resistor processing module is used to process thin-film resistors on the deformation-resistant dielectric layer to form thin-film resistors. The anti-deformation processing module is also used for: Deformation-resistant dielectric is deposited on the dielectric material layer to fill the depressions formed on the dielectric material layer and cover the protrusions formed on the dielectric material layer, thereby obtaining the deformation-resistant dielectric layer to be treated. The anti-deformation medium layer to be treated is subjected to chemical mechanical polishing to obtain the target anti-deformation medium layer; The thickness of the anti-deformation dielectric layer at different locations is adjusted appropriately based on the depressions and protrusions on the dielectric material layer. The thickness of the anti-deformation medium layer to be treated is between 200 angstroms and 2000 angstroms, and the thickness of the anti-deformation medium layer is between 50 angstroms and 500 angstroms.

5. An electronic device, characterized in that, include: The device includes a processor, a memory, and a bus. The memory stores machine-readable instructions executable by the processor. When the electronic device is running, the processor communicates with the memory via the bus. The machine-readable instructions are executed by the processor to perform the steps of the method for preparing a thin-film resistor as described in any one of claims 1 to 3.

6. A computer-readable storage medium, characterized in that, The computer-readable storage medium stores a computer program that, when executed by a processor, performs the steps of the method for preparing a thin-film resistor as described in any one of claims 1 to 3.

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