Display panel, manufacturing method thereof and display device

Abstract

The invention provides a display panel, a manufacturing method thereof and a display device, relates to the technical field of display, and is used for improving the bright state current of an optical sensor. The display panel comprises a substrate and an optical sensor arranged on the substrate, wherein the optical sensor comprises a plurality of photodiodes; the substrate comprises at least one groove structure, the groove structure is located on the surface, facing the photodiode, of the substrate, and the orthographic projection of at least part of the photodiode on the substrate is overlapped with the corresponding groove structure; the display panel further comprises a reflective layer, at least part of the reflective layer is located in the corresponding groove structure, and the reflective layer is located between the corresponding groove structure and the corresponding photodiode.

Description

Technical Field

[0001] This invention relates to the field of display technology, and in particular to a display panel, its manufacturing method, and a display device. Background Technology

[0002] With the continuous development of display technology, organic light-emitting display products are not only finding more diverse applications, but some are also gradually becoming more multifunctional. Currently, some display products integrate optical sensors to detect changes in light, enabling ambient light recognition or fingerprint recognition. However, the ratio of bright-state current to dark-state current in these optical sensors is relatively small, resulting in a low signal-to-noise ratio and low responsivity, affecting the accuracy of the recognition function. Therefore, improving the bright-state current of optical sensors has become a pressing technical problem to be solved. Summary of the Invention

[0003] The purpose of this invention is to provide a display panel and its manufacturing method, as well as a display device, for improving the bright-state current of an optical sensor.

[0004] To achieve the above objectives, the present invention provides the following technical solution:

[0005] A first aspect of the present invention provides a display panel, comprising: a substrate and an optical sensor disposed on the substrate, the optical sensor comprising a plurality of photodiodes;

[0006] The substrate includes at least one trench structure located on the surface of the substrate facing the photodiode, and at least a portion of the orthogonal projection of the photodiode onto the substrate overlaps with the corresponding trench structure.

[0007] The display panel further includes a reflective layer, at least a portion of which is located within the corresponding trench structure, and the reflective layer is located between the corresponding trench structure and the corresponding photodiode.

[0008] Optionally, the reflective layer includes a first reflective portion, a second reflective portion, and / or a third reflective portion;

[0009] The first reflective portion is located at the bottom of the corresponding groove structure; the second reflective portion is located on the wall of the corresponding groove structure; and the third reflective portion is located outside the corresponding groove structure and around the periphery of the corresponding groove structure.

[0010] Optionally, the photodiode includes an intrinsic semiconductor layer, the orthographic projection of which overlaps with the corresponding trench structure on the substrate; the intrinsic semiconductor layer continues the morphology of the reflective layer.

[0011] Optionally, the photodiode further includes a first doped layer and a second doped layer, and the intrinsic semiconductor layer is coupled to the first doped layer and the second doped layer, respectively;

[0012] The orthographic projection of the first doped layer on the substrate at least partially overlaps with the orthographic projection of the third reflective portion on the substrate, the orthographic projection of the second doped layer on the substrate at least partially overlaps with the orthographic projection of the third reflective portion on the substrate, and the orthographic projection of the first doped layer on the substrate and the orthographic projection of the second doped layer on the substrate do not overlap.

[0013] Optionally, the display panel further includes sub-pixels, each sub-pixel including a sub-pixel driving circuit, the sub-pixel driving circuit including a transistor structure;

[0014] The display panel further includes a light-shielding layer, which is located between the corresponding transistor structure and the substrate; the reflective layer is made of the same layer and material as the light-shielding layer.

[0015] Optionally, the display panel further includes a first isolation layer having at least one opening structure, the inner wall of the opening structure being an extension of the groove wall of a corresponding trench structure; at least a portion of the first isolation layer is located between the reflective layer and the substrate.

[0016] Based on the above-described display panel technical solution, a second aspect of the present invention provides a display device including the above-described display panel.

[0017] Based on the above-described technical solution for the display panel, a third aspect of the present invention provides a method for manufacturing a display panel, the method comprising:

[0018] At least one trench structure is fabricated on the substrate.

[0019] A reflective layer is fabricated, at least a portion of which is located within the corresponding trench structure;

[0020] An optical sensor is fabricated on the side of the reflective layer facing away from the substrate. The optical sensor includes a plurality of photodiodes. At least a portion of the photodiodes have their orthogonal projections onto the substrate overlapping the corresponding trench structure.

[0021] Optionally, the step of fabricating at least one trench structure on the substrate includes:

[0022] Provide a substrate;

[0023] A first isolation material layer is fabricated on the substrate. A patterning process is performed on the first isolation material layer and the substrate to form a trench structure on the substrate, and a first isolation layer including at least one opening structure, wherein the inner sidewall of the opening structure serves as an extension of the trench wall of the corresponding trench structure.

[0024] Optionally, the display panel further includes sub-pixels, each sub-pixel including a sub-pixel driving circuit, the sub-pixel driving circuit including a transistor structure; the display panel further includes a light-shielding layer, the light-shielding layer being located between the corresponding transistor structure and the substrate.

[0025] The steps for creating the reflective layer specifically include:

[0026] In the same patterning process, the reflective layer and the light-shielding layer are formed simultaneously.

[0027] In the technical solution provided by this invention, a trench structure is formed on the surface of the substrate facing the photodiode, and a reflective layer is formed within the trench structure, positioned between the corresponding trench structure and the corresponding photodiode. Light, after being absorbed by the photodiode, penetrates the photodiode and strikes the reflective layer, then is reflected back to the photodiode, achieving secondary absorption of light by the photodiode. Furthermore, the trench walls have a certain slope angle, and the portion of the reflective layer formed within the trench structure continues the morphology of the trench structure, also having a certain slope angle. This allows light incident at large angles to be better reflected to the photodiode, further enhancing secondary absorption. Therefore, in the technical solution provided by this invention, the photocurrent of the photodiode is effectively increased, thereby effectively increasing the ratio of bright-state current to dark-state current of the optical sensor, improving the signal-to-noise ratio, enhancing the sensitivity of the optical sensor, and ensuring the accuracy of the display panel's recognition function. Moreover, the technical solution provided by this invention integrates the optical sensor into the backplane structure, avoiding the optical sensor occupying additional space and effectively reducing the cost of the display panel. Attached Figure Description

[0028] The accompanying drawings, which are included to provide a further understanding of the invention and form part of this invention, illustrate exemplary embodiments of the invention and are used to explain the invention, but do not constitute an undue limitation of the invention. In the drawings:

[0029] Figures 1 to 7 This is a schematic diagram illustrating the manufacturing process of a display panel provided in an embodiment of the present invention. Detailed Implementation

[0030] To further illustrate the display panel, its manufacturing method, and the display device provided in the embodiments of the present invention, a detailed description is provided below with reference to the accompanying drawings.

[0031] Please see Figures 1 to 7 This invention provides a display panel, including: a substrate 10 and an optical sensor disposed on the substrate 10, wherein the optical sensor includes a plurality of photodiodes 20;

[0032] The substrate 10 includes at least one trench structure 101, the trench structure 101 being located on the surface of the substrate 10 facing the photodiode 20, and at least a portion of the orthogonal projection of the photodiode 20 on the substrate 10 overlapping the corresponding trench structure 101.

[0033] The display panel further includes a reflective layer 30, at least a portion of which is located within the corresponding trench structure 101, and the reflective layer 30 is located between the corresponding trench structure 101 and the corresponding photodiode 20.

[0034] For example, the display panel includes a display area and a peripheral area surrounding the display area. The display area includes a plurality of sub-pixels arranged in an array. The display panel also includes an optical sensor, which can be used for ambient light recognition or fingerprint recognition. For example, when used for ambient light recognition, the optical sensor can be disposed in the display area and / or the peripheral area; when used for fingerprint recognition, the optical sensor can utilize the light emitted by the sub-pixels, and therefore the optical sensor can be disposed in the display area, adjacent to the sub-pixels.

[0035] For example, the optical sensor may include a plurality of photodiodes 20 arranged in an array, but is not limited thereto. The photodiodes 20 may collect ambient light or light emitted by sub-pixels and reflected by a finger.

[0036] For example, the plurality of sub-pixels includes a plurality of sub-pixel driving circuits arranged in an array. The plurality of sub-pixel driving circuits are divided into multiple rows of sub-pixel driving circuits and multiple columns of sub-pixel driving circuits. The multiple rows of sub-pixel driving circuits are arranged along a second direction, and each row includes a plurality of sub-pixel driving circuits arranged along a first direction. The multiple columns of sub-pixel driving circuits are arranged along the first direction, and each column includes a plurality of sub-pixel driving circuits arranged along a second direction. For example, the first direction intersects with the second direction. For example, the first direction includes a horizontal direction, and the second direction includes a vertical direction. For example, the sub-pixel includes a sub-pixel driving circuit and a light-emitting element. The sub-pixel driving circuit is coupled to the anode of the light-emitting element and is used to provide a driving signal to the light-emitting element, driving the light-emitting element to emit light.

[0037] For example, the substrate 10 is made of PI (polyimide) material, but is not limited to this.

[0038] For example, the substrate 10 has a trench structure 101 on the surface facing the photodiode 20, and the trench wall of the trench structure 101 has a certain slope angle α, for example: 0°≤α≤90°, but not limited to this.

[0039] For example, the substrate 10 includes a plurality of trench structures 101, each of which corresponds to a plurality of photodiodes 20. The orthogonal projection of the photodiode 20 onto the substrate 10 at least partially overlaps with the corresponding trench structure 101.

[0040] For example, the display panel further includes a reflective layer 30, which is made of a metal material with high reflectivity, such as Mo, Ti, Al, etc., but not limited to these.

[0041] For example, the reflective layer 30 includes a first reflective portion 301, a second reflective portion 302, and / or a third reflective portion 303; the first reflective portion 301 is located at the bottom of the corresponding groove structure 101; the second reflective portion 302 is located on the wall of the corresponding groove structure 101; and the third reflective portion 303 is located outside the corresponding groove structure 101 and around the periphery of the corresponding groove structure 101.

[0042] For example, the first reflective portion 301, the second reflective portion 302, and the third reflective portion 303 are formed as an integral structure.

[0043] For example, the display panel includes a plurality of reflective layers 30, which correspond one-to-one with the plurality of trench structures 101, and the reflective layer 30 is located between the corresponding trench structure 101 and the corresponding photodiode 20.

[0044] According to the specific structure of the display panel described above, in the display panel provided in this embodiment of the invention, a trench structure 101 is provided on the surface of the substrate 10 facing the photodiode 20, and a reflective layer 30 is provided in the trench structure 101. The reflective layer 30 is disposed between the corresponding trench structure 101 and the corresponding photodiode 20. In this way, after the light is absorbed by the photodiode 20, it will penetrate the photodiode 20 and be incident on the reflective layer 30, and then reflected back to the photodiode 20 by the reflective layer 30, realizing the secondary absorption of light by the photodiode 20. Moreover, the trench wall of the trench structure 101 has a certain slope angle, and the part of the reflective layer 30 formed in the trench structure 101 continues the morphology of the trench structure 101 and also has a certain slope angle. In this way, light incident at a large angle can be better reflected to the photodiode 20, and the secondary absorption of light by the photodiode 20 can be better realized (e.g., Figure 7 (The light transmission path shown). Therefore, in the display panel provided by the embodiments of the present invention, the photocurrent of the photodiode 20 is effectively increased, thereby effectively increasing the ratio of the bright-state current to the dark-state current of the optical sensor, improving the signal-to-noise ratio, improving the sensitivity of the optical sensor, and ensuring the accuracy of the display panel's recognition function.

[0045] Moreover, the display panel provided in this embodiment of the invention integrates an optical sensor into the back panel structure, which avoids the optical sensor occupying additional space and effectively reduces the cost of the display panel.

[0046] like Figures 1 to 7 As shown, in some embodiments, the photodiode 20 includes an intrinsic semiconductor layer 201, the orthographic projection of which overlaps with the corresponding trench structure 101 on the substrate 10; the intrinsic semiconductor layer 201 continues the morphology of the reflective layer 30.

[0047] For example, the photodiode 20 further includes a first doped layer 202 and a second doped layer 203, and the intrinsic semiconductor layer 201 is coupled to the first doped layer 202 and the second doped layer 203 respectively; the orthographic projection of the first doped layer 202 on the substrate 10 at least partially overlaps with the orthographic projection of the third reflective portion 303 on the substrate 10, the orthographic projection of the second doped layer 203 on the substrate 10 at least partially overlaps with the orthographic projection of the third reflective portion 303 on the substrate 10, and the orthographic projection of the first doped layer 202 on the substrate 10 and the orthographic projection of the second doped layer 203 on the substrate 10 do not overlap.

[0048] For example, the intrinsic semiconductor layer 201 is located between the first doped layer 202 and the second doped layer 203, wherein the first doped layer 202 includes a P-type doped layer and the second doped layer 203 includes an N-type doped layer, but is not limited thereto.

[0049] For example, at least a portion of the intrinsic semiconductor layer 201 is located within the trench structure 101, but is not limited thereto.

[0050] For example, the intrinsic semiconductor layer 201 may be made of polycrystalline silicon (p-Si), but is not limited to this.

[0051] Since the portion of the reflective layer 30 formed within the trench structure 101 continues the morphology of the trench structure 101 and has a certain slope angle, and the intrinsic semiconductor layer 201, while continuing the morphology of the reflective layer 30, also has a certain slope angle, light incident at large angles can be better reflected to the photodiode 20 and better absorbed by the photodiode 20. Therefore, in the display panel provided by the above embodiment, the photocurrent of the photodiode 20 is effectively increased, thereby effectively increasing the ratio of bright-state current to dark-state current of the optical sensor, improving the signal-to-noise ratio, improving the sensitivity of the optical sensor, and ensuring the accuracy of the display panel's recognition function.

[0052] like Figures 1 to 7 As shown, in some embodiments, the display panel further includes sub-pixels, each sub-pixel including a sub-pixel driving circuit, the sub-pixel driving circuit including a transistor structure TFT; the display panel further includes a light-shielding layer LS, the light-shielding layer LS being located between the corresponding transistor structure TFT and the substrate 10; the reflective layer 30 and the light-shielding layer LS are disposed in the same layer and of the same material.

[0053] For example, the specific structure of the sub-pixel driving circuit can vary. For instance, the sub-pixel driving circuit may adopt a 7T1C (7 transistors and 1 capacitor) circuit structure, but it is not limited to this.

[0054] For example, an inorganic isolation layer is provided between the reflective layer 30 and the intrinsic semiconductor layer 201.

[0055] The above-mentioned arrangement of the reflective layer 30 and the light-shielding layer LS with the same layer and material allows the reflective layer 30 and the light-shielding layer LS to be formed simultaneously in the same patterning process, thereby effectively simplifying the manufacturing process of the display panel and reducing the manufacturing cost of the display panel.

[0056] like Figures 1 to 7 As shown, in some embodiments, the display panel further includes a first isolation layer Bar1, the first isolation layer Bar1 having at least one opening structure K1, the inner sidewall of the opening structure K1 being an extension of the groove wall of the corresponding trench structure 101; at least a portion of the first isolation layer Bar1 is located between the reflective layer 30 and the substrate 10.

[0057] For example, the opening structure K1 of the first isolation layer Bar1 and the groove structure 101 are formed simultaneously in the same patterning process. The inner wall of the opening structure K1 is an extension of the groove wall of the corresponding groove structure 101, that is, the extension direction of the inner wall of the opening structure K1 is the same as the extension direction of the groove wall of the groove structure 101.

[0058] The above configuration allows the inner wall of the opening structure K1 and the groove wall of the trench structure 101 to form a larger area and a higher inclined side, thereby enabling light incident at a large angle to be better reflected to the photodiode 20, and better realizing the secondary absorption of light by the photodiode 20.

[0059] This invention also provides a display device, including the display panel provided in the above embodiments.

[0060] For example, the display panel includes an organic light-emitting diode display panel, but is not limited to this.

[0061] It should be noted that the display device can be any product or component with display function, such as a television, monitor, digital photo frame, mobile phone, or tablet computer. The display device also includes flexible circuit boards, printed circuit boards, and backplanes.

[0062] In the display panel provided in the above embodiment, a trench structure 101 is formed on the surface of the substrate 10 facing the photodiode 20, and a reflective layer 30 is formed within the trench structure 101. The reflective layer 30 is positioned between the corresponding trench structure 101 and the corresponding photodiode 20. Thus, after light is absorbed by the photodiode 20, it penetrates the photodiode 20 and strikes the reflective layer 30, and is then reflected back to the photodiode 20 by the reflective layer 30, achieving secondary absorption of light by the photodiode 20. Furthermore, the trench structure 101... The trench wall has a certain slope angle, and the portion of the reflective layer 30 formed within the trench structure 101 continues the morphology of the trench structure 101, also having a certain slope angle. This allows light incident at large angles to be better reflected to the photodiode 20, better achieving secondary absorption of light by the photodiode 20. Therefore, in the display panel provided by the above embodiment, the photocurrent of the photodiode 20 is effectively increased, thereby effectively increasing the ratio of bright-state current to dark-state current of the optical sensor, improving the signal-to-noise ratio, enhancing the sensitivity of the optical sensor, and ensuring the accuracy of the display panel's recognition function. Furthermore, the display panel provided by the above embodiment integrates the optical sensor into the backplane structure, avoiding the optical sensor occupying additional space and effectively reducing the cost of the display panel.

[0063] The display device provided in this embodiment of the invention, when including the above-described display panel, also has the above-described beneficial effects, which will not be repeated here.

[0064] like Figures 1 to 7 As shown, this embodiment of the invention also provides a method for manufacturing a display panel, used to manufacture the display panel provided in the above embodiment, the method comprising:

[0065] At least one trench structure 101 is formed on the substrate 10;

[0066] A reflective layer 30 is fabricated, at least a portion of which is located within the corresponding trench structure 101;

[0067] An optical sensor is fabricated on the side of the reflective layer 30 facing away from the substrate 10. The optical sensor includes a plurality of photodiodes 20. At least a portion of the photodiodes 20 have their orthogonal projections on the substrate 10 overlapping with the corresponding trench structure 101.

[0068] In the display panel manufactured using the method provided in this embodiment of the invention, a trench structure 101 is formed on the surface of the substrate 10 facing the photodiode 20, and a reflective layer 30 is formed within the trench structure 101. The reflective layer 30 is positioned between the corresponding trench structure 101 and the corresponding photodiode 20. Thus, after light is absorbed by the photodiode 20, it penetrates the photodiode 20 and strikes the reflective layer 30, and is then reflected back to the photodiode 20 by the reflective layer 30, achieving secondary absorption of light by the photodiode 20. Furthermore, the trench structure 101... The trench wall has a certain slope angle, and the portion of the reflective layer 30 formed within the trench structure 101 continues the morphology of the trench structure 101, also having a certain slope angle. This allows light incident at large angles to be better reflected to the photodiode 20, better achieving secondary absorption of light by the photodiode 20. Therefore, in the display panel manufactured using the method provided in this embodiment, the photocurrent of the photodiode 20 is effectively increased, thereby effectively increasing the ratio of bright-state current to dark-state current of the optical sensor, improving the signal-to-noise ratio, enhancing the sensitivity of the optical sensor, and ensuring the accuracy of the display panel's recognition function. Furthermore, the display panel provided in the above embodiment integrates the optical sensor into the backplane structure, avoiding the optical sensor occupying additional space and effectively reducing the cost of the display panel.

[0069] In some embodiments, the step of fabricating at least one trench structure 101 on the substrate 10 includes:

[0070] A substrate 10 is provided;

[0071] A first isolation material layer is fabricated on the substrate 10. A patterning process is performed on the first isolation material layer and the substrate 10 to form a trench structure 101 on the substrate 10, and a first isolation layer Bar1 including at least one opening structure K1, wherein the inner sidewall of the opening structure K1 extends as the trench wall of the corresponding trench structure 101.

[0072] In some embodiments, the display panel further includes a sub-pixel, the sub-pixel including a sub-pixel driving circuit, the sub-pixel driving circuit including a transistor structure TFT; the display panel further includes a light-shielding layer LS, the light-shielding layer LS being located between the corresponding transistor structure TFT and the substrate 10;

[0073] The steps for fabricating the reflective layer 30 specifically include:

[0074] In the same patterning process, the reflective layer 30 and the light-shielding layer LS are formed simultaneously.

[0075] More specifically, PI adhesive is coated onto a carrier board and cured at high temperature to form a substrate 10; a first isolation material layer is deposited and formed, and in the area where the photodiode 20 will be fabricated, a patterning process is performed on the first isolation material layer and the substrate 10 to form a trench structure 101 on the substrate 10, and a first isolation layer Bar1 including at least one opening structure K1, the inner sidewall of the opening structure K1 serving as an extension of the trench wall of the corresponding trench structure 101; then a second isolation layer Bar2 is deposited and formed, which can isolate moisture from the PI film layer; then, in the same patterning process, the reflective layer 30 and the light-shielding layer LS are formed simultaneously; then a buffer film layer Buf is deposited and formed; then a P-Si pattern is fabricated, simultaneously forming the active layer of the transistor structure TFT and the semiconductor of the photodiode 20. The process involves: depositing a first gate insulating layer GI1 to form the first gate pattern Gate1; then doping the active layer of the TFT structure and the P-type and N-type doping of the semiconductor material layer of the photodiode 20 to form the first doped layer 202 and the second doped layer 203, while simultaneously forming the intrinsic semiconductor layer 201; then fabricating a second gate insulating layer, a second gate metal layer, an interlayer insulating layer ILD, and a first source / drain metal layer SD1, which forms the source and drain of the TFT structure and the first electrode 204 and the second electrode 205 of the photodiode 20; finally, fabricating a first planarization layer PLN1, a second source / drain metal layer SD2, a second planarization layer PLN2, an anode layer Ano, a pixel boundary layer PDL, a spacer layer PS, a light-emitting material layer EL, a cathode layer, and a packaging layer TFE.

[0076] The above-described patterning process of the first isolation material layer and the substrate 10 forms a trench structure 101 on the substrate 10 and a first isolation layer Bar1 including at least one opening structure K1, wherein the inner sidewall of the opening structure K1 extends the trench wall of the corresponding trench structure 101. This not only simplifies the manufacturing process of the display panel, but also allows the inner sidewall of the opening structure K1 and the trench wall of the trench structure 101 to form a larger area and a higher inclined side, thereby enabling light incident at a large angle to be better reflected to the photodiode 20, and better realizing the secondary absorption of light by the photodiode 20.

[0077] In the same patterning process, the reflective layer 30 and the light-shielding layer LS are formed simultaneously, which effectively simplifies the manufacturing process of the display panel and reduces the manufacturing cost of the display panel.

[0078] It should be noted that, in the embodiments of the present invention, "same layer" can refer to film layers located on the same structural layer. Alternatively, for example, film layers located on the same layer can be layer structures formed by using the same film deposition process to form a specific pattern, and then patterning the film layer using the same photomask through a single patterning process. Depending on the specific pattern, the single patterning process may include multiple exposure, development, or etching processes, and the specific pattern in the formed layer structure can be continuous or discontinuous. These specific patterns may also be at different heights or have different thicknesses.

[0079] In the various method embodiments of the present invention, the sequence numbers of each step are not intended to limit the order of the steps. For those skilled in the art, any changes in the order of the steps without creative effort are also within the scope of protection of the present invention.

[0080] It should be noted that the various embodiments in this specification are described in a progressive manner, and the same or similar parts between the various embodiments can be referred to mutually. Each embodiment focuses on describing the differences from other embodiments. In particular, the method embodiments are basically similar to the product embodiments, so the description is relatively simple, and the relevant parts can be referred to the description of the product embodiments.

[0081] Unless otherwise defined, the technical or scientific terms used in this disclosure shall have the ordinary meaning understood by one of ordinary skill in the art to which this invention pertains. The terms “first,” “second,” and similar terms used in this disclosure do not indicate any order, quantity, or importance, but are merely used to distinguish different components. Terms such as “comprising” or “including” mean that the element or object preceding the word encompasses the elements or objects listed following the word and their equivalents, without excluding other elements or objects. Terms such as “connection,” “coupled,” or “linked” are not limited to physical or mechanical connections, but can include electrical connections, whether direct or indirect. Terms such as “upper,” “lower,” “left,” and “right” are used only to indicate relative positional relationships; these relative positional relationships may change accordingly when the absolute position of the described object changes.

[0082] It is understandable that when a component such as a layer, film, region, or substrate is referred to as being "above" or "below" another component, the component may be "directly" located "above" or "below" the other component, or there may be intermediate components present.

[0083] In the description of the above embodiments, specific features, structures, materials, or characteristics may be combined in any suitable manner in one or more embodiments or examples.

[0084] The above description is merely a specific embodiment of the present invention, but the scope of protection of the present invention is not limited thereto. Any variations or substitutions that can be easily conceived by those skilled in the art within the technical scope disclosed in the present invention should be included within the scope of protection of the present invention. Therefore, the scope of protection of the present invention should be determined by the scope of the claims.

Claims

1. A display panel, characterized in that, include: A substrate and an optical sensor disposed on the substrate, the optical sensor including a plurality of photodiodes; The substrate includes at least one trench structure located on the surface of the substrate facing the photodiode, and at least a portion of the orthogonal projection of the photodiode onto the substrate overlaps with the corresponding trench structure. The display panel further includes a reflective layer, at least a portion of which is located within the corresponding trench structure, and the reflective layer is located between the corresponding trench structure and the corresponding photodiode.

2. The display panel according to claim 1, characterized in that, The reflective layer includes a first reflective portion, a second reflective portion, and / or a third reflective portion; The first reflective portion is located at the bottom of the corresponding groove structure; the second reflective portion is located on the wall of the corresponding groove structure. The third reflective portion is located outside the corresponding groove structure and around the periphery of the corresponding groove structure.

3. The display panel according to claim 2, characterized in that, The photodiode includes an intrinsic semiconductor layer, the orthogonal projection of which overlaps with the corresponding trench structure on the substrate; the intrinsic semiconductor layer continues the morphology of the reflective layer.

4. The display panel according to claim 3, characterized in that, The photodiode further includes a first doped layer and a second doped layer, and the intrinsic semiconductor layer is coupled to the first doped layer and the second doped layer respectively; The orthographic projection of the first doped layer on the substrate at least partially overlaps with the orthographic projection of the third reflective portion on the substrate, the orthographic projection of the second doped layer on the substrate at least partially overlaps with the orthographic projection of the third reflective portion on the substrate, and the orthographic projection of the first doped layer on the substrate and the orthographic projection of the second doped layer on the substrate do not overlap.

5. The display panel according to any one of claims 1 to 4, characterized in that, The display panel further includes sub-pixels, each sub-pixel including a sub-pixel driving circuit, which includes a transistor structure. The display panel further includes a light-shielding layer, which is located between the corresponding transistor structure and the substrate; the reflective layer is made of the same layer and material as the light-shielding layer.

6. The display panel according to any one of claims 1 to 4, characterized in that, The display panel further includes a first isolation layer having at least one opening structure, the inner wall of the opening structure being an extension of the groove wall of a corresponding trench structure; at least a portion of the first isolation layer is located between the reflective layer and the substrate.

7. A display device, characterized in that, Includes the display panel as described in any one of claims 1 to 6.

8. A method for manufacturing a display panel, characterized in that, The method for manufacturing a display panel as described in any one of claims 1 to 6 includes: At least one trench structure is fabricated on the substrate. A reflective layer is fabricated, at least a portion of which is located within the corresponding trench structure; An optical sensor is fabricated on the side of the reflective layer facing away from the substrate. The optical sensor includes a plurality of photodiodes. At least a portion of the photodiodes have their orthogonal projections onto the substrate overlapping the corresponding trench structure.

9. The method for manufacturing a display panel according to claim 8, characterized in that, The steps of fabricating at least one trench structure on a substrate include: Provide a substrate; A first isolation material layer is fabricated on the substrate. A patterning process is performed on the first isolation material layer and the substrate to form a trench structure on the substrate, and a first isolation layer including at least one opening structure, wherein the inner sidewall of the opening structure serves as an extension of the trench wall of the corresponding trench structure.

10. The method for manufacturing a display panel according to claim 8, characterized in that, The display panel further includes sub-pixels, each sub-pixel including a sub-pixel driving circuit, the sub-pixel driving circuit including a transistor structure; the display panel further includes a light-shielding layer, the light-shielding layer being located between the corresponding transistor structure and the substrate. The steps for creating the reflective layer specifically include: In the same patterning process, the reflective layer and the light-shielding layer are formed simultaneously.

Images