Film forming apparatus and film forming method

Abstract

A film-forming apparatus for forming a film on a vapor deposition material on a substrate adsorbed on an electrostatic chuck is provided with: a measurement device for measuring the potential of the adsorption surface of the substrate to be adsorbed by the electrostatic chuck on a transport path before the substrate is adsorbed by the electrostatic chuck; and a control device that controls the film formation process on the basis of the measurement results of the measurement device.

Description

TECHNICAL FIELD

[0001] The present application relates to a film formation apparatus and a film formation method for forming a film on a substrate. BACKGROUND

[0002] In Patent Literature 1, a film formation apparatus that performs film formation processing on a substrate adsorbed to an electrostatic chuck is disclosed. The film formation apparatus detects a change in electrostatic capacitance between the substrate and the electrostatic chuck, and changes an applied voltage of the electrostatic chuck based on the detection information of the electrostatic capacitance.

[0003] PRIOR ART DOCUMENTS

[0004] PATENT LITERATURE

[0005] Patent Literature 1: Japanese Patent Application Laid-Open No. 2022-155114 SUMMARY

[0006] PROBLEMS TO BE SOLVED BY THE INVENTION

[0007] Through a process such as peeling of a mask and a substrate, the substrate can sometimes be electrified. If the substrate is to be adsorbed to an electrostatic chuck in a state where the substrate is electrified, a case where a high voltage is required compared to a prescribed voltage required for adsorption, or a case where a part of the substrate contacts the electrostatic chuck before voltage application can occur. Due to these reasons, film formation processing is delayed, and an increase in production tact time, a reduction in yield, a reduction in production volume, and the like can occur. In addition, if a structure that measures a surface potential is provided inside a film formation chamber, or an electrostatic elimination mechanism is provided, the size of the film formation apparatus can be upsized.

[0008] It is preferable to measure a surface potential of the substrate before the substrate contacts the electrostatic chuck, to control a voltage applied to the electrostatic chuck, or to perform electrostatic elimination of the substrate together with the control of the voltage applied to the electrostatic chuck.

[0009] The present application provides a technology that can at least control film formation processing based on a measurement result of a surface potential of a substrate measured before the substrate contacts an electrostatic chuck, in view of the above-described problems.

[0010] MEANS FOR SOLVING THE PROBLEMS

[0011] A film formation apparatus of one embodiment of the present application performs film formation of an evaporation material on a substrate adsorbed to an electrostatic chuck, and includes:

[0012] a measurement member that measures a potential of an adsorption surface of the substrate to be adsorbed to the electrostatic chuck on a conveyance path before the substrate is adsorbed to the electrostatic chuck; and

[0013] a control member that controls film formation processing based on a measurement result of the measurement member.

[0014] Invention Effects

[0015] According to the present invention, the film formation process can be controlled based on the measurement results of the surface potential of the substrate measured before the substrate comes into contact with the electrostatic chuck. Attached Figure Description

[0016] Figure 1 This is a schematic diagram of a part of an electronic device production line.

[0017] Figure 2 This is a schematic diagram of a film-forming apparatus according to one embodiment.

[0018] Figure 3 This is a diagram illustrating the structure of the static eliminator in the film-forming apparatus of the embodiment, as shown in Example 1.

[0019] Figure 4 This is a diagram illustrating the structure of an antistatic device in a film-forming apparatus according to an embodiment, as shown in Example 2.

[0020] Figure 5 This is a diagram illustrating the structure of the static eliminator in the film-forming apparatus of the embodiment, as shown in Example 3.

[0021] Figure 6 This is a diagram illustrating the structure of the static eliminator in the film-forming apparatus of the embodiment, as shown in Example 4.

[0022] Figure 7 This is a diagram illustrating the structure of the static eliminator in the film-forming apparatus of the embodiment, as shown in Example 5.

[0023] Figure 8 This is a diagram illustrating the structure of the static eliminator in the film-forming apparatus of the embodiment, as shown in Example 6.

[0024] Figure 9 This is a diagram illustrating the structure of the static eliminator in the film-forming apparatus of the embodiment, as shown in Example 7.

[0025] Figure 10 This is a diagram illustrating the structure of the static eliminator in the film-forming apparatus of the embodiment, Example 8.

[0026] Figure 11 This is a schematic diagram illustrating the operation of the base and the substrate support (Structural Example 8).

[0027] Figure 12 This is a diagram showing an example of the configuration of the measuring device (surface potentiometer) in the embodiment.

[0028] Figure 13 This is a diagram illustrating the processing flow of the measuring device and control device in the embodiment.

[0029] Figure 14This is a diagram illustrating the overall processing flow performed by the film-forming apparatus of the embodiment. Detailed Implementation

[0030] Hereinafter, embodiments will be described in detail with reference to the accompanying drawings. Furthermore, the following embodiments do not limit the scope of the invention as defined by the claims. While multiple features are described in the embodiments, these features are not limited to those essential to the invention, and multiple features can be arbitrarily combined. In the accompanying drawings, the same or identical structures are labeled with the same reference numerals, and repeated descriptions are omitted.

[0031] <Electronic Component Production Line>

[0032] Figure 1 This is a schematic diagram showing a portion of the structure of an electronic device production line to which the film-forming apparatus of the present invention can be applied. Figure 1 In production lines, such as those used to manufacture display panels for organic EL display devices, substrates 100 are sequentially fed to a film deposition module 301, where organic EL elements are deposited on the substrates 100. Figure 1 In the diagram, arrow Z indicates the vertical direction (direction of gravity), and arrows X and Y indicate mutually orthogonal horizontal directions. Additionally, in all diagrams, G represents grounding.

[0033] In the film deposition module 301, a plurality of film deposition chambers 303a-303d for film deposition processing on the substrate 100 and a mask storage chamber 305 for storing masks before and after use are arranged around the transport chamber 302, which has an octagonal shape when viewed from above. A transport robot 302a for transporting the substrate 100 is arranged in the transport chamber 302. The transport robot 302a includes a hand that holds the substrate 100 and a multi-joint arm that can move the hand in the horizontal and vertical directions. In other words, the film deposition module 301 is a group-type film deposition unit in which a plurality of film deposition chambers 303a-303d are arranged around the transport robot 302a. It should be noted that the film deposition chambers 303a-303d are collectively referred to as film deposition chambers 303a-303d, or, if no distinction is made, they are referred to as film deposition chamber 303.

[0034] Along the transport direction (arrow direction) of the substrate 100, a buffer chamber 306, a swirl chamber 307, and a transfer chamber 308 are respectively arranged on the upstream and downstream sides of the film deposition module 301. During manufacturing, each chamber is maintained in a vacuum state. It should be noted that... Figure 1 Only one film-forming module 301 is illustrated, but the production line of this embodiment has multiple film-forming modules 301, which are connected by a connecting device consisting of a buffer chamber 306, a swirl chamber 307, and a transfer chamber 308. It should be noted that the structure of the connecting device is not limited to this; for example, it may consist of only the buffer chamber 306 or the transfer chamber 308.

[0035] The conveying robot 302a performs the following: feeding the substrate 100 from the upstream transfer chamber 308 to the conveying chamber 302; conveying the substrate 100 between the film forming chambers 303; conveying the mask between the mask storage chamber 305 and the film forming chamber 303; and feeding the substrate 100 from the conveying chamber 302 to the downstream buffer chamber 306.

[0036] The buffer chamber 306 is a chamber for temporarily storing substrates 100 according to the operating conditions of the production line. A substrate storage rack, also referred to as a housing, and a lifting mechanism are provided in the buffer chamber 306. The substrate storage rack has a multi-layer structure capable of storing multiple substrates 100 in a horizontal state with the processed surface (film-forming surface) of the substrate 100 facing downwards in the direction of gravity. The lifting mechanism raises and lowers the substrate storage rack to align the layer of substrates 100 being fed in or out with the transport position. Thus, multiple substrates 100 can be temporarily housed and held in the buffer chamber 306.

[0037] The swirl chamber 307 is equipped with a device for changing the orientation of the substrate 100. In this embodiment, the orientation of the substrate 100 is rotated 180 degrees by a transport robot 307a disposed in the swirl chamber 307. The transport robot 307a includes a hand that holds the substrate 100 and a multi-joint arm that can move the hand in the horizontal and vertical directions. The transport robot 307a disposed in the swirl chamber 307 rotates 180 degrees while supporting the substrate 100 received in the buffer chamber 306 and hands it over to the transfer chamber 308, thereby swapping the front and rear ends of the substrate in the buffer chamber 306 and the transfer chamber 308. As a result, the orientation of the substrate 100 when it is fed into the film deposition chamber 303 is the same in each film deposition module 301, thus making it possible to make the scanning direction of the evaporation source relative to the substrate 100 and the orientation of the mask consistent in each film deposition module 301. By adopting such a structure, the orientation of the masks placed in the mask storage chamber 305 can be consistent in each film-forming module 301, which simplifies mask management and improves availability.

[0038] The production line control system includes a host computer 300 that controls the entire production line as a main computer, and control devices 14a-14d, 309, and 310 that control various structures. These devices can communicate via wired or wireless communication line 300a. Control devices 14a-14d are correspondingly arranged with film-forming chambers 303a-303d and control the film-forming apparatus 1, which will be described later. It should be noted that, when collectively referred to as control devices 14a-14d, or, if not distinguished, as control device 14.

[0039] The control device 14 controls the entire film-forming apparatus 1. The control device 14 includes a processing unit 1, a storage unit, an input / output interface (I / O), and a communication unit. The processing unit, represented by a CPU, is a processor that executes programs stored in the storage unit to control the film-forming apparatus 1. The storage unit is a storage device such as ROM, RAM, or HDD, which stores various control information in addition to the programs executed by the processing unit. The I / O is the interface for sending and receiving signals between the processing unit and the various components of the film-forming apparatus 1. The communication unit is a communication device that communicates with the host device 300 or other control devices 14, 309, 310, etc., via a communication line. The processing unit receives information from or sends information to the host device 300 via the communication unit. It should be noted that all or part of the control device 14 and the host device 300 can also be composed of a PLC, ASIC, or FPGA.

[0040] Control device 309 controls conveying robot 302a. Control device 310 controls the device of rotary chamber 307 and conveying robot 307a. Host device 300 sends information related to substrate 100, conveying timing and other instructions to each control device 14, 309 and 310, and each control device 14, 309 and 310 controls each structure based on the received instructions.

[0041] <Overview of Film-Forming Devices>

[0042] Figure 2 This is a schematic diagram of a film-forming apparatus 1 according to one embodiment. The film-forming apparatus 1, provided in the film-forming chamber 303, is an apparatus for depositing vapor-deposited material on a substrate 100, forming a thin film of vapor-deposited material with a predetermined pattern via a mask 101. The material of the substrate 100 in which film formation is performed in the film-forming apparatus 1 can be appropriately selected from materials such as glass, resin, and metal; preferably, a material with a resin layer such as polyimide formed on glass is used. The vapor-deposited material can be organic materials, inorganic materials (metals, metal oxides, etc.), etc. The film-forming apparatus 1 can be applied to manufacturing apparatuses for electronic devices and optical components such as display devices (flat panel displays, etc.), thin-film solar cells, and organic photoelectric conversion elements (organic thin-film imaging elements), and particularly to manufacturing apparatuses for organic EL panels. In the following description, an example of film formation on a substrate 100 by vacuum vapor deposition using the film-forming apparatus 1 will be described, but this embodiment is not limited to this and can also be applied to various film-forming methods such as sputtering or CVD.

[0043] The film-forming apparatus 1 has a box-shaped vacuum chamber 3 (also simply referred to as a chamber) capable of maintaining an internal vacuum. The internal space 3a of the vacuum chamber 3 is maintained in a vacuum atmosphere or an inert gas atmosphere such as nitrogen. In this embodiment, the vacuum chamber 3 is connected to a vacuum pump (not shown). It should be noted that, in this specification, "vacuum" refers to a state filled with a gas at a pressure lower than atmospheric pressure, in other words, a depressurization state. Inside the internal space 3a of the vacuum chamber 3, a substrate support unit 6 that supports the substrate 100 in a horizontal position, a mask stage 5 that supports the mask 101, a film-forming unit 4, a plate unit 9, and an electrostatic chuck 15 are arranged. The mask 101 is a metal mask having an opening pattern corresponding to the thin film pattern formed on the substrate 100, and is placed on the mask stage 5. It should be noted that the mask stage 5 can be replaced with other components that fix the mask 101 in a predetermined position. As the mask 101, a mask having a structure in which a mask foil of a predetermined thickness is welded and fixed on a frame-shaped mask frame can be used. The material of the mask 101 is not particularly limited; for example, a metal with a low coefficient of thermal expansion, such as Invar alloy, can also be used. The film formation process is performed with the substrate 100 placed on the mask 101 and the substrate 100 and the mask 101 overlapping each other.

[0044] The plate unit 9 includes a cooling plate 10 and a magnet plate 11. The cooling plate 10 is suspended below the magnet plate 11 in a manner that allows it to be displaced relative to the magnet plate 11 in the Z direction. The cooling plate 10 has the function of cooling the substrate 100 adsorbed on the electrostatic chuck 15 during film formation by contacting it during film formation. The cooling plate 10 is not limited to actively cooling the substrate 100 by having a water cooling mechanism or the like; it may also be a plate-shaped component that absorbs heat from the substrate 100 by contacting the electrostatic chuck 15 without having a water cooling mechanism or the like. The magnet plate 11 is a plate that attracts the mask 101 by magnetic force and is placed on the upper surface of the substrate 100, thereby improving the adhesion between the substrate 100 and the mask 101 during film formation.

[0045] It should be noted that the cooling plate 10 and the magnet plate 11 can be omitted. For example, if the electrostatic chuck 15 is equipped with a cooling mechanism, the cooling plate 10 may not be required. Additionally, if the electrostatic chuck 15 adsorbs the mask 101, the magnet plate 11 may also be omitted.

[0046] The film-forming unit 4, comprising a heater, baffles, a drive mechanism for the evaporation source, and an evaporation rate monitor, is a deposition source for depositing the material onto the substrate 100. More specifically, in this embodiment, the film-forming unit 4 is a linear evaporation source from which multiple nozzles (not shown) are arranged in the X direction, and the material to be deposited is emitted from each nozzle. For example, the linear evaporation source is reciprocated in the Y direction (depth direction of the device) by an evaporation source moving mechanism (not shown). In this embodiment, the film-forming unit 4 is disposed in the vacuum chamber 3 where the alignment process described later is performed. However, in embodiments where the film-forming process is performed in a different chamber than the vacuum chamber 3 where alignment is performed, the film-forming unit 4 is not disposed in the vacuum chamber 3.

[0047] The substrate support unit 6 supports the peripheral portion of the substrate 100. The substrate support unit 6 includes multiple bases 61 and multiple substrate support portions 62 protruding inward from the bases 61. It should be noted that the substrate support portions 62 are sometimes also referred to as "receiving claws" or "substrate support claws". The bases 61 are each supported by a support shaft R3. The substrate 100, fed into the film forming apparatus 1 by the transport robot 302a, is supported by the multiple substrate support portions 62.

[0048] In this embodiment, the plurality of substrate support portions 62 are composed of leaf springs. When the substrate 100 supported by the plurality of substrate support portions 62 is attracted to the electrostatic chuck 15, the periphery of the substrate 100 can be pressed against the electrostatic chuck 15 by the elastic force of the leaf springs.

[0049] An electrostatic chuck 15 adsorbs the substrate 100. In this embodiment, the electrostatic chuck 15 is disposed between the substrate support unit 6 and the plate unit 9 and is supported by one or more support shafts R1. In one embodiment, the support shaft R1 is a cylindrical shaft.

[0050] The electrostatic chuck 15 includes, for example, a structure in which circuitry such as metal electrodes is embedded within a ceramic substrate (also referred to as the substrate). The surface of the electrostatic chuck 15 can be polyimide (resin) or can be anodized aluminum. In this embodiment, the electrostatic chuck 15 has multiple electrode portions. Each electrode portion includes an electrode to which a positive (+) voltage is applied and an electrode to which a negative (-) voltage is applied. When a voltage is applied to each electrode, polarization charges are induced on the substrate 100 through the ceramic substrate, and the adsorption surface 100a of the substrate 100 is adsorbed and fixed by the adsorption surface 150 of the electrostatic chuck 15 using the electrostatic attraction (electrostatic force) between the substrate 100 and the electrostatic chuck 15.

[0051] In addition, multiple openings are formed on the electrostatic chuck 15, and the measurement units (first measurement unit 7 and second measurement unit 8) described later take pictures of the alignment marks described later through the multiple openings, thereby obtaining information related to the relative positional relationship between the substrate 100 and the mask 101.

[0052] The position adjustment unit 20 adjusts the relative position of the substrate 100, which is supported by the substrate support unit 6 at its periphery, or the substrate 100, which is attracted by the electrostatic chuck 15, and the mask 101. The position adjustment unit 20 adjusts the relative position of the substrate 100 with respect to the mask 101 by displacing the substrate support unit 6 or the electrostatic chuck 15 in the XY plane. That is, the position adjustment unit 20 can also be described as a unit that adjusts the horizontal positional relationship between the mask 101 and the substrate 100. For example, the position adjustment unit 20 can displace the substrate support unit 6 in the X and Y directions and can rotate it about the Z-axis. In this embodiment, the position of the mask 101 is fixed, and the relative position of the substrate 100 is adjusted by displacing it. However, it is also possible to adjust the relative position by displacing the mask 101, or by displacing both the substrate 100 and the mask 101. For example, the position adjustment unit 20 can also displace the substrate support unit 6 using a known structure such as a motor as a drive source and a ball screw mechanism that converts the motor's driving force into linear motion.

[0053] The distance adjustment unit 22 adjusts the distance between the electrostatic chuck 15 and the substrate support unit 6 and the mask stage 5 by raising and lowering them, so that the substrate 100 and the mask 101 approach and move away (separate) in the thickness direction (Z direction) of the substrate 100. In this embodiment, the distance adjustment unit 22 includes a first lifting plate 220, which supports the electrostatic chuck 15 via multiple support shafts R1 and supports the substrate support unit 6 via multiple support shafts R3. The distance adjustment unit 22 raises and lowers the electrostatic chuck 15 and the substrate support unit 6 by raising and lowering the first lifting plate 220. That is, the distance adjustment unit 22 makes the substrate 100 and the mask 101 approach each other in the overlapping direction or move away from each other in the opposite direction. It should be noted that the "distance" adjusted by the distance adjustment unit 22 is the so-called vertical distance (or vertical distance), and the distance adjustment unit can also be described as a unit that adjusts the vertical position of the mask 101 and the substrate 100. For example, the position adjustment unit 20 can also displace the first lifting plate 220 using a known structure such as a motor as a drive source and a ball screw mechanism that converts the motor's driving force into linear motion. Additionally, the distance adjustment unit 22 includes an actuator 65 that moves the substrate support unit 6 relative to the first lifting plate 220, thereby changing the relative position of the substrate support unit 6 relative to the electrostatic chuck 15. The measurement units (first measurement unit 7 and second measurement unit 8), the position adjustment unit 20, and the distance adjustment unit 22 adjust the relative positions of the substrate 100 and the mask 101 based on the measurement results of alignment marks formed on the substrate 100 and the mask 101, respectively.

[0054] It should be noted that in this embodiment, the distance adjustment unit 22 fixes the position of the mask stage 5 and moves the substrate support unit 6 and the electrostatic chuck 15 to adjust their distance in the Z direction, but it is not limited to this. The position of the substrate support unit 6 or the electrostatic chuck 15 can also be fixed and the mask stage 5 can be moved for adjustment, or the substrate support unit 6, the electrostatic chuck 15 and the mask stage 5 can be moved separately to adjust their distance from each other.

[0055] The plate unit lifting unit 13 lifts and lowers the plate unit 9, which is connected to the second lifting plate 12 and disposed inside the vacuum chamber 3, by lifting and lowering the second lifting plate 12 disposed outside the vacuum chamber 3. The plate unit 9 is connected to the second lifting plate 12 via one or more support shafts R2. In this embodiment, the plate unit 9 is supported by two support shafts R2. The support shafts R2 extend upward from the magnet plate 11 and are connected to the second lifting plate 12 through the openings of the upper wall portion 30, the openings of the fixed plate 20a and the movable plate 20b, and the opening of the first lifting plate 220. For example, the position adjustment unit 20 may also move the second lifting plate 12 using a known structure such as a motor as a drive source and a ball screw mechanism that converts the driving force of the motor into linear motion.

[0056] The openings of the upper wall portion 30 of the vacuum chamber 3 through which the aforementioned support shafts R1 to R3 pass have the magnitude of displacement in both the X and Y directions. In order to maintain the airtightness of the vacuum chamber 3, bellows or the like are provided at the openings of the upper wall portion 30 through which the support shafts R1 to R3 pass.

[0057] The measuring units (first measuring unit 7 and second measuring unit 8) measure the positional offset between the substrate 100 and the mask 101, whose peripheral portions are supported by the substrate support unit 6. In this embodiment, both the first measuring unit 7 and the second measuring unit 8 are imaging devices (cameras) for capturing images. The first measuring unit 7 and the second measuring unit 8 are disposed above the upper wall portion 30 and are capable of capturing images inside the vacuum chamber 3 through a window (not shown) formed in the upper wall portion 30.

[0058] In this embodiment, alignment marks for aligning the substrate 100 and the mask 101 are formed on the substrate 100 and the mask 101, respectively. Furthermore, coarse alignment marks for making approximate position adjustments and fine alignment marks for making more precise position adjustments are provided on the substrate 100 and the mask 101, respectively.

[0059] The first measurement unit 7 is a low-magnification CCD camera (coarse camera) with a relatively wide field of view but low resolution, which measures the approximate positional offset of the substrate 100 and the mask 101. For example, two first measurement units 7 are provided to take pictures of coarse alignment marks respectively located near the center of the short side of the substrate 100 and the mask 101 via the opening 152.

[0060] The second measurement unit 8 is a high-magnification CCD camera (fine camera) with a relatively narrow field of view but high resolution (e.g., on the order of several μm), which measures the positional offset of the substrate 100 and the mask 101 with high precision. For example, four second measurement units 8 are provided to take pictures of the precision alignment marks respectively provided at the four corners of the substrate 100 and the mask 101 via the opening 152.

[0061] In this embodiment, after the approximate position adjustment of the substrate 100 and the mask 101 is performed based on the measurement results of the first measurement unit 7, the precise position adjustment of the substrate 100 and the mask 101 is performed based on the measurement results of the second measurement unit 8.

[0062] The film deposition apparatus 1 of this embodiment is an upward deposition type structure (in which the film deposition surface of the substrate 100 faces the vertically downward side and the adsorption surface 100a of the substrate 100 faces the vertically upward side during film deposition). In the upward deposition type film deposition apparatus 1, the back side of the film deposition surface of the substrate 100 (the side facing the vertically upward side) is the adsorption surface that is adsorbed by the electrostatic chuck 15; in other words, it is the contact surface where the electrostatic chuck 15 contacts the substrate 100. In the film deposition apparatus 1, the vertically upward side of the substrate 100 is the adsorption surface 100a, and the vertically downward side of the substrate 100 is the film deposition surface. The film deposition apparatus 1 forms a thin film of vapor-deposited material with a predetermined pattern on the film deposition surface of the substrate via a mask 101.

[0063] In addition, in this embodiment, the path before the substrate 100 comes into contact with the electrostatic chuck 15 is called the substrate transport path before film formation (hereinafter also simply referred to as the transport path). For example, the path before the substrate 100 is attracted by the electrostatic chuck 15 of the film formation apparatus 1 in the film formation chamber 303 where the first film formation process is performed is the substrate transport path before film formation.

[0064] exist Figure 1 In this structure, for example, the path from the substrate storage rack provided in the buffer chamber 306 to the point before the substrate 100 is attracted by the electrostatic chuck 15 of the film forming apparatus 1 in the film forming chamber 303 is the substrate transport path before film forming. It should be noted that the substrate transport path before film forming is only the path before the substrate 100 is attracted by the electrostatic chuck 15, and is not limited to this path. Figure 1The structure shown in the example can also be used as the starting point of the path, with the storage container for receiving the substrate 100 located further upstream of the buffer chamber 306. It should be noted that in this embodiment, the device structure on the substrate transport path before film formation and each film formation module 301 including the film formation apparatus 1 are sometimes collectively referred to as the film formation system or film formation apparatus.

[0065] The film-forming apparatus of this embodiment includes an antistatic device for removing static electricity from the adsorption surface 100a of the substrate 100 to be adsorbed by the electrostatic chuck 15 on the substrate transport path before film formation.

[0066] <Example 1 of a static eliminator structure: An example of installing a static eliminator in the conveying chamber 302>

[0067] Figure 3 This is a diagram illustrating a structural example 1 of the static eliminator in the film-forming apparatus 1 of the embodiment. As a structural example 1 of the static eliminator, the structure of a static eliminator (ion generator) 350 capable of operation in a vacuum environment will be described. Figure 3 As an example of a substrate transport path before film formation, an example is shown where an antistatic device (ion generator) 350 is installed in the transport chamber 302. Specifically, an example is shown where the antistatic device (ion generator) 350 is installed near the gate valve 361 between the film formation chamber 303 and the transport chamber 302.

[0068] The static eliminator (ion generator) 350 is a device that outputs ultraviolet light that induces ionization. For example, it could also be a device employing a vacuum ultraviolet light-based ion generation method (photoionization). The static eliminator (ion generator) 350 can be connected to a vacuum chamber (e.g., in a vacuum chamber) via a vacuum flange 352. Figure 3 In example 1, the connection is made to the transport chamber 2, etc. Here, the vacuum flange 352 has a sealing function and is a vacuum component that can connect the vacuum chamber and the static eliminator (ion generator) 350.

[0069] The static eliminator (ion generator) 350 has a vacuum ultraviolet light generating unit 351 (light source unit) and an irradiation unit 353 that irradiates the vacuum ultraviolet light generated by the vacuum ultraviolet light generating unit 351, and irradiates the vacuum ultraviolet light 354 from the irradiation unit 353.

[0070] exist Figure 3The illustrated structure shows an example where static eliminators (ion generators) 350 are provided on both the upper and lower sides of the transport chamber 302. However, in the upward deposition type film deposition apparatus 1, when eliminating static electricity on the adsorption surface 100a of the substrate 100, it is sufficient to provide a static eliminator (ion generator) 350 only on the upper side of the transport chamber 302. The transport robot 302a adjusts the distance between the irradiation section 353 and the adsorption surface 100a by controlling its position in the Z direction (vertical direction), thereby adjusting the irradiation range of the vacuum ultraviolet light 354.

[0071] The transport robot 302a moves in the X direction (horizontal direction) to transport the substrate 100 to the film formation chamber 303. Thereby, the adsorption surface 100a of the substrate 100 is irradiated by vacuum ultraviolet light 354 along the substrate transport path before film formation, which removes the potential (static charge) carried by the substrate 100. To simultaneously remove static charge over a wider irradiation range along the substrate transport path before film formation, multiple static eliminators (ion generators) 350 can also be installed in the Y direction (perpendicular to the paper surface).

[0072] <Example 2 of the structure of an antistatic device: An example of installing an antistatic device in buffer chamber 306>

[0073] The location of the static eliminator (ion generator) 350 is not limited to the transport chamber 302, but can also irradiate the substrate 100 stored in the storage container or the substrate storage rack in the buffer chamber 306 with vacuum ultraviolet light 354. In this embodiment, the path up to the point where the substrate 100 comes into contact with the electrostatic chuck 15 is used as the substrate transport path before film formation. Therefore, the buffer chamber 306 and the storage container for the substrate 100 located upstream of the buffer chamber 306 are also included in the substrate transport path before film formation.

[0074] Figure 4 This is a diagram illustrating a structural example 2 of the static eliminator in the film-forming apparatus 1 of the embodiment. As a structural example 2 of the static eliminator, in... Figure 4 In this example, as a substrate transport path before film formation, an example is shown where an antistatic device (ion generator) 350 is installed in a buffer chamber 306. The substrate 100 stored in the substrate storage rack of the buffer chamber 306 is stored in a horizontal state with the surface to be processed (film formation surface) facing downwards (vertically downwards) in the direction of gravity. Therefore, the adsorption surface 100a of the substrate 100 becomes... Figure 4 The vertical upper side.

[0075] exist Figure 4The structure shown represents an example in which an antistatic device (ion generator) 350 is provided on both the upper and lower sides of the transport chamber 302. However, in the upward deposition type film forming apparatus 1, when performing antistatic treatment on the adsorption surface 100a of the substrate 100, it is sufficient to provide an antistatic device (ion generator) 350 on at least the upper side of the buffer chamber 306.

[0076] In order to irradiate the substrate 100 with vacuum ultraviolet light 354 over a wide area while it is in a stored state, Figure 4 In structural example 2, multiple static eliminators (ion generators) 350 are provided in the X direction (horizontal direction), but providing multiple static eliminators 350 is not a necessary structure. For example, if a single static eliminator (ion generator) 350 can be used to eliminate static electricity in the area of ​​the adsorption surface 100a of the substrate 100 that needs to be eliminated, it is sufficient to provide at least one static eliminator (ion generator) 350 on the upper side of the buffer chamber 306.

[0077] <Example 3 of a static eliminator structure: An example of installing a static eliminator in a cyclone chamber 307>

[0078] In this embodiment, the path from the substrate 100 to the electrostatic chuck 15 is used as the substrate transport path before film formation. Therefore, for example, Figure 1 The swirl chamber 307, the transfer chamber 308, etc. are also included in the substrate transport path before film formation. Figure 5 This is a diagram illustrating a structural example 3 of the static eliminator in the film-forming apparatus 1 of the embodiment. As a structural example 3 of the static eliminator, in... Figure 5 In this example, as a substrate transport path before film formation, an example is shown where an antistatic device (ion generator) 350 is installed in a cyclone chamber 307. A transport robot 307a moves in the X direction (horizontal direction) within the cyclone chamber 307, transporting the substrate 100 to a transfer chamber 308. Thereby, the adsorption surface 100a of the substrate 100 is irradiated by vacuum ultraviolet light 354 along the substrate transport path before film formation, removing the potential (static charge) carried by the substrate 100. To simultaneously remove static charge over a wider irradiation range along the substrate transport path before film formation, multiple antistatic devices (ion generators) 350 can also be installed in the Y direction (perpendicular to the paper plane). The location of the antistatic device (ion generator) 350 is not limited to... Figure 5 The swirl chamber 307 shown can also be the junction chamber 308.

[0079] exist Figure 5 In the structure shown, with Figure 3Similarly, this example illustrates the provision of static eliminators (ion generators) 350 on both the upper and lower sides of the cyclone chamber 307. However, in the upward deposition type film deposition apparatus 1, when eliminating static electricity on the adsorption surface 100a of the substrate 100, it is sufficient to provide a static eliminator (ion generator) 350 only on the upper side of the cyclone chamber 307. The transport robot 307a adjusts the distance between the irradiation unit 353 and the adsorption surface 100a by controlling its position in the Z direction (vertical direction), thereby adjusting the irradiation range of the vacuum ultraviolet light 354.

[0080] <Example 4 of the structure of an antistatic device: An example of installing an antistatic device on the side wall of film forming apparatus 1>

[0081] Figure 6 This is a diagram illustrating the structure of the static eliminator in the film-forming apparatus 1 of the embodiment, as shown in Example 4. Figure 6 As an example of a substrate transport path before film formation, an example is shown where an antistatic device (ion generator) 350 is provided on the side wall of the film formation apparatus 1.

[0082] The substrate 100 is supported by the substrate support portion 62 (substrate support claw) at the periphery of the substrate 100. In this state, the adsorption surface 100a of the substrate 100 is not adsorbed by the electrostatic chuck 15. In this state, an antistatic device (ion generator) 350 is provided on the side wall of the film forming apparatus 1 so as to irradiate the substrate 100 supported by the substrate support portion 62 with vacuum ultraviolet light 354 from the horizontal direction (X direction).

[0083] In this embodiment, the path before the substrate 100 comes into contact with the electrostatic chuck 15 is taken as the substrate transport path before film formation. Therefore, the position of the substrate 100 in the substrate support 62 within the film formation apparatus 1 is included in the substrate transport path before film formation.

[0084] As shown in Structural Examples 1 to 4, by irradiating the substrate 100 (adsorption surface 100a) with vacuum ultraviolet light 354 using an antistatic device (ion generator) 350, the potential carried on the adsorption surface 100a of the substrate 100 can be removed.

[0085] <Example 5 of an antistatic device structure: Example using a static-diffusing material: protruding shape>

[0086] In Structural Examples 1 through 4, the structure using the static eliminator (ion generator) 350 was described, but the structure of the static eliminator is not limited to these examples. For example, a material with electrostatic diffusivity can also be used. A material with electrostatic diffusivity is a material that has the property of diffusing charged charges (electrostatic diffusivity). Here, "electrostatic diffusivity" means that the surface resistivity (Rs) measured based on the provisions of IEC 61340-5-1 and 5-2 has a value of 1 × 10⁻⁶. 4 Ω or higher and less than 1×10 11 A substance with a surface resistivity of Ω. The range of this surface resistivity (Rs) is also called the electrostatic diffusion region. Hereinafter, substances with electrostatic diffusion properties will also be referred to as electrostatic diffusing substances.

[0087] As a material with electrostatic diffusion properties, resins (e.g., thermosetting resins) or ceramics located in the electrostatic diffusion region can be used. The electrostatic diffusion material can be shaped into various shapes, such as protruding shapes (pin shapes), sheet-like shapes with two-dimensional expansion (plate-like shapes), and roller shapes (cylindrical shapes), so as to facilitate contact with the component to be eluted (the adsorption surface 100a of the substrate 100).

[0088] Figure 7 This is a diagram illustrating a structural example 5 of the antistatic device in the film-forming apparatus 1 of the embodiment. As a structural example 5 of the antistatic device, an example is shown of a protruding (pin-shaped) component formed from an electrostatically diffusing material 504.

[0089] An antistatic robot 501 capable of moving (moving up and down) an electrostatic diffusing material 504 in the vertical direction (Z direction) is provided in the transport chamber 302. The antistatic robot 501 includes an antistatic hand 503 that holds a protruding (pin-shaped) component formed from the electrostatic diffusing material 504, and an actuator 502 that moves the antistatic hand 503 in the vertical direction (Z direction). Multiple protruding (pin-shaped) components formed from the electrostatic diffusing material 504 are arranged two-dimensionally within the holding surface (XY plane) of the antistatic hand 503, in contact with the adsorption surface 100a of the substrate 100. In this embodiment, the antistatic robot 501 having the electrostatic diffusing material 504 is referred to as an antistatic device. Figure 7 The structure shown represents an example in which the static eliminator robot 501 is disposed on the upper surface side of the conveying chamber 302, but it is not limited to this example. For example, the static eliminator robot 501 may also be disposed on the lower surface side of the conveying chamber 302 in a manner that does not interfere with the conveying robot 302a.

[0090] exist Figure 7In this example, as a substrate transport path before film formation, an example is shown where an antistatic device (antistatic robot 501) is installed in the transport chamber 302. Specifically, at a position on the substrate transport path before film formation, the antistatic device (antistatic robot 501) actuates the actuator 502, causing the antistatic hand 503 to descend vertically. As the antistatic hand 503 descends, a protruding (pin-shaped) component formed of an electrostatic diffusing material 504 comes into contact with the adsorption surface 100a of the substrate 100, thereby removing the potential carried on the adsorption surface 100a of the substrate 100.

[0091] <Example 6 of the structure of an antistatic device: Example of using a static-diffusing material: sheet-like>

[0092] Figure 8 This is a diagram illustrating a structural example 6 of the static eliminator in the film-forming apparatus 1 of the embodiment. As a structural example 6 of the static eliminator, it shows an example of a sheet-like (plate-like) component formed from an electrostatically diffusing material 504, exhibiting two-dimensional expansion.

[0093] and Figure 7 Similarly, an antistatic robot 501 capable of moving (up and down) the electrostatically diffusing material 504 in the vertical direction (Z direction) is installed in the conveying chamber 302. The device structure of the antistatic robot 501 is similar to... Figure 7 Basically the same, but Figure 8 In the structural example 6 shown, a sheet-like component formed of electrostatic diffusing material 504 is held in the antistatic hand portion 503 via a sheet holding component 505. The sheet-like component formed of electrostatic diffusing material 504, which has a two-dimensional extension, is held in the holding surface (XY plane) of the antistatic hand portion 503 in such a way that it can contact the adsorption surface 100a surface of the substrate 100.

[0094] exist Figure 8 In this example, as a substrate transport path before film formation, an example is shown where an antistatic device (antistatic robot 501) is installed in the transport chamber 302. Specifically, at a position on the substrate transport path before film formation, the antistatic device (antistatic robot 501) actuates the actuator 502, causing the antistatic hand 503 to descend vertically. By the descent of the antistatic hand 503, a sheet-like component with two-dimensional expansion formed of electrostatic diffusing material 504 comes into contact with the adsorption surface 100a of the substrate 100, thereby removing the potential carried by the substrate 100.

[0095] <Example 7 of the structure of an antistatic device: An example using a static-diffusing material: Roller shape>

[0096] Figure 9This is a diagram illustrating a structural example 7 of the antistatic device in the film-forming apparatus 1 of the embodiment. As a structural example 7 of the antistatic device, an example is shown of a roller-shaped (cylindrical) component formed from an electrostatically diffusing material 504.

[0097] and Figure 7 as well as Figure 8 Similarly, an antistatic robot 501 is installed in the conveying chamber 302, capable of moving (moving up and down) a roller-shaped (cylindrical) component formed from the electrostatic diffusing material 504 in the vertical direction (Z direction). The device structure of the antistatic robot 501 is similar to... Figure 7 as well as Figure 8 Basically the same, but Figure 9 In the structural example 7 shown, a roller-shaped (cylindrical) component formed of electrostatic diffusing material 504 is disposed within the holding surface (XY plane) of the antistatic hand 503 in a manner that allows it to contact the adsorption surface 100a of the substrate 100. A roller holding member 506 is provided on the holding surface of the antistatic hand 503. The roller holding member 506 holds the roller-shaped (cylindrical) component formed of electrostatic diffusing material 504 so that it can rotate. The antistatic hand 503 of the antistatic robot 501 holds the roller-shaped (cylindrical) component formed of electrostatic diffusing material 504 via the roller holding member 506.

[0098] exist Figure 9 In this example, as a substrate transport path before film formation, an example is shown where an antistatic device (antistatic robot 501) is installed in the transport chamber 302. Specifically, at a position on the substrate transport path before film formation, the antistatic device (antistatic robot 501) actuates the actuator 502, causing the antistatic hand 503 to descend vertically. As the antistatic hand 503 descends, a roller-shaped (cylindrical) component formed of electrostatic diffusing material 504 comes into contact with the adsorption surface 100a of the substrate 100, thereby removing the potential carried by the substrate 100. With the roller-shaped (cylindrical) component formed of electrostatic diffusing material 504 in contact with the adsorption surface 100a of the substrate 100, by moving the transport robot 302a in the horizontal direction (X direction), the roller-shaped (cylindrical) component formed of electrostatic diffusing material 504 rotates on the adsorption surface 100a of the substrate 100, thereby removing the potential carried by the substrate 100.

[0099] exist Figure 7 to Figure 9 In the structural examples 5 to 7 of the static eliminator described in the text, an example of setting a static eliminator robot 501 in the transport chamber 302 is described. However, it is not limited to this example. The static eliminator robot 501 can also be set on the substrate transport path before film formation, such as the buffer chamber 306, the swirl chamber 307, or the transfer chamber 308.

[0100] <Example 8 of the structure of an antistatic device: Example of using an antistatic diffusing material: substrate support>

[0101] In structural examples 5 to 7 of the static eliminator, an example is described in which an electrostatic diffusing material 504 is provided in the static eliminator hand 503 of the static eliminator robot 501. In structural example 8 of the static eliminator, an example is described in which a substrate support portion 62, which is made of an electrostatic diffusing material and contacts the film-forming surface of the substrate 100, and a substrate support portion 63, which is made of an electrostatic diffusing material and contacts the adsorption surface 100a of the substrate 100, are described. Figure 10 as well as Figure 11 This is a diagram illustrating the structure of the static eliminator in the film-forming apparatus 1 of the embodiment, as shown in Example 8.

[0102] exist Figure 10 as well as Figure 11 In this embodiment, the base 61 holds the substrate supports 62 and 63. Additionally, the actuator 160 moves the base 61 in the horizontal direction (X direction). In this embodiment, the substrate supports 62 and 63, the base 61, and the actuator 160, all made of an electrostatically diffusing material, are referred to as an electrostatic discharge device.

[0103] Figure 10 This refers to the film-forming apparatus 1 that utilizes structure example 8. The basic apparatus structure has the same characteristics as in... Figure 2 The film-forming apparatus 1 described herein has the same structure, but differs in having an antistatic device (61-63, 161). The base 61, substrate support portions 62 and 63, and actuator 160 are configured as at least a pair on the left and right sides. It should be noted that the base 61, substrate support portions 62 and 63, and actuator 160 may also be further provided in the vertical direction of the paper surface in a manner that surrounds the periphery of the substrate 100.

[0104] The actuator 160 causes the base 61 and the substrate support portions 62 and 63 to move relative to the substrate 100 that is fed into the vacuum chamber 3 of the film forming apparatus 1 in the horizontal direction. Figure 11 This diagram schematically illustrates the operation of the base 61 and the substrate support portions 62 and 63 in the static eliminator.

[0105] like Figure 11 As shown in ST1, by the operation of the actuator 160, the base 61 on the left side of the paper and the substrate support portions 62 and 63 move in the direction of arrow S1, thereby contacting the left end of the substrate 100. In addition, by the operation of the actuator 160, the base 61 on the left side of the paper and the substrate support portions 62 and 63 move in the direction of arrow S3, thereby separating from the left end of the substrate 100.

[0106] Similarly, by the action of the actuator 160, the base 61 on the right side of the paper and the substrate support portions 62 and 63 move in the direction of arrow S2, thereby coming into contact with the right end of the substrate 100. In addition, by the action of the actuator 160, the base 61 on the right side of the paper and the substrate support portions 62 and 63 move in the direction of arrow S4, thereby separating from the right end of the substrate 100.

[0107] The substrate support portions 62 and 63, formed from an electrostatically diffusing material, function as a pair of leaf springs (clamping members). The substrate support portion 62 functions as a leaf spring that applies force vertically upward, and the substrate support portion 63 functions as a leaf spring that applies force vertically downward. The upper and lower substrate support portions 62 and 63 are in contact when the forces acting on them are balanced.

[0108] like Figure 11 As shown in ST2, the left and right base portions 61 and substrate support portions 62 and 63 move in the directions of arrows S1 and S2, respectively, and come into contact with the end of the substrate 100. When the actuator 160 moves in the directions of arrows S1 and S2, the left end of the substrate 100 is sandwiched between the substrate support portions 62 and 63 on the left side of the paper, as indicated by the up-down arrows. Similarly, the right end of the substrate 100 is sandwiched between the substrate support portions 62 and 63 on the right side of the paper, as indicated by the up-down arrows.

[0109] The left and right substrate support portions 62 and 63 are formed of an electrostatically diffusing material. By sandwiching the left and right ends of the substrate 100 between the substrate support portions 62 and 63, the adsorption surface 100a of the substrate 100 comes into contact with the substrate support portion 63. As a component formed of an electrostatically diffusing material, the substrate support portion 63 contacts the adsorption surface 100a of the substrate 100 when supporting the periphery of the substrate 100. By bringing the substrate support portion 63, which is an electrostatically diffusing material, into contact with the adsorption surface 100a of the substrate 100, the potential of the adsorption surface 100a of the substrate 100 can be removed.

[0110] exist Figure 10 as well as Figure 11 In the structural example 8 shown, an example of a substrate support portion 62 and 63 formed by an electrostatic diffusion material is presented. However, when performing static elimination on the adsorption surface 100a, at least the substrate support portion 63 formed by the electrostatic diffusion material can be used.

[0111] To facilitate clamping the left and right ends of the substrate 100 between the substrate supports 62 and 63, a tapered shape may be formed at the ends of the substrate supports 62 and 63. Alternatively, it may be formed with a curved cross-sectional shape, not limited to a tapered shape. By forming a tapered or curved shape at the ends of the substrate supports 62 and 63, the ends of the substrate 100 can be easily guided between the substrate supports 62 and 63 along the tapered or curved shape.

[0112] In structural example 8, by bringing the substrate support portion 63 formed of an electrostatically diffusing material into contact with the adsorption surface 100a of the substrate 100, the potential of the adsorption surface 100a of the substrate 100 can also be removed on the substrate transport path before film formation.

[0113] With the substrate 100 held between its two ends by the left and right substrate support portions 62 and 63, the actuator 65 moves the base 61 vertically upward, thereby moving the substrate 100 vertically upward. The adsorption surface 100a is then adsorbed by the electrostatic chuck 15, and the entire surface of the substrate 100 to be processed comes into contact with the mask 101 for film formation. After the film formation process is completed, the actuator 65 moves the base 61 vertically downward, thereby moving the substrate 100 vertically downward. Then, the actuator 160 moves the left and right substrate support portions 62 and 63 in the directions of arrows S3 and S4, thereby releasing the substrate 100.

[0114] According to the film forming apparatus 1 of this embodiment, by means of the structure of the static eliminator, static elimination can be performed on the adsorption surface 100a of the substrate 100 before the substrate 100 comes into contact with the static chuck 15.

[0115] <Measurement of the surface potential of substrate 100>

[0116] The film-forming apparatus 1 of this embodiment includes a measuring device for measuring the potential (surface potential) of the substrate 100 on the substrate transport path before film formation. The measuring device is a surface potentiometer that can be used in a vacuum environment, and it measures the potential (surface potential) of the adsorption surface 100a of the substrate 100 non-contactly on the substrate transport path before film formation. Here, the substrate transport path before film formation is the same as the example described in the static eliminator (Structure Examples 1 to 8).

[0117] Figure 12 This diagram shows an example of the configuration of the measuring device 1201 (surface potentiometer). Figure 12In this example, as a substrate transport path before film formation, a measuring device 1201 is provided within the transport chamber 302. Specifically, an example is shown where the measuring device 1201 (surface potentiometer) is positioned within the transport chamber 302 before the gate valve 361 between the film formation chamber 303 and the transport chamber 302. Multiple measuring devices 1201 are arranged along the Y-direction. On the substrate transport path where the substrate 100 is transported by the transport robot 302a, the measuring device 1201 measures the potential (surface potential) of the substrate 100. The measuring device 1201 (surface potentiometer) is positioned at a predetermined distance above the vertical direction (Z-direction) relative to the adsorption surface 100a, so that it faces the adsorption surface 100a of the substrate 100 transported by the transport robot 302a and can be measured non-contactly. As for the position of the measuring device 1201 (surface potentiometer), the "predetermined distance" is preferably, for example, about 30 mm to 60 mm. By changing the setting of the specified distance, the measurement range (diameter of the measurement point) of the measuring device 1201 (surface potentiometer) can be changed. For example, as the specified distance increases, the measurement range is set wider, and as the specified distance decreases, the measurement range is set narrower.

[0118] The measuring device 1201 inputs the measured surface potential results to the control device 14. The control device 14 averages the surface potential measurement results input from multiple measuring devices 1201. Then, based on the input measurement results (measured potentials), the control device 14 controls the voltage applied to the electrode portion of the electrostatic chuck 15 to adsorb the substrate 100. The voltage applied to the electrode portion of the electrostatic chuck 15 is set to a predetermined voltage (initial voltage) through the voltage V of the power supply (not shown) connected to the control device 14. The control device 14 adjusts the voltage applied to the electrostatic chuck 15 to make the adsorption force on the substrate 100 uniform.

[0119] <Processing flow (pre-processing) of measuring device 1201 and control device 14>

[0120] Figure 13 This is a flowchart illustrating the processing flow of the measuring device 1201 and the control device 14. In S101, the measuring device 1201 measures the surface potential of the substrate 100. The surface potential measurement performed by the measuring device 1201 can be performed on all substrates 100 of a specified batch, or on the initial N sheets (N: an integer) constituting the batch. Based on these measurement results, the control device 14 performs various controls in the film formation process.

[0121] In S102, the control device 14 performs control of the film formation process based on the measurement results of the measuring device 1201. The control of the film formation process includes various processes performed by the film formation apparatus 1. The control of the film formation process may include adjusting the voltage applied to the electrostatic chuck 15, removing static electricity by the static eliminator, and controlling the process so that the substrate 100 is not subjected to film formation.

[0122] The control device 14 can also adjust the voltage applied to the electrostatic chuck 15 based on the measurement results of the measuring device 1201 so that the adsorption force of the adsorption substrate 100 is equal.

[0123] Alternatively, the control device 14 can also control the static eliminator (Structure Examples 1 to 8) based on the measurement results of the measuring device 1201. For example, the control device 14 can also change the irradiation time of the static eliminator (ion generator) 350 irradiating the adsorption surface 100a (extend or shorten the irradiation time). In addition, the control device 14 can also control the static eliminator (static eliminator robot 501) to change the contact time between the electrostatic diffusing material and the adsorption surface 100a (extend or shorten the contact time).

[0124] Alternatively, the control device 14 may control the film-forming apparatus 1 based on the measurement results of the measuring device 1201 so as not to perform film-forming treatment on the measured substrate 100. For example, the control device 14 may also exclude the substrate whose adsorption surface potential is measured from the substrate to be processed for film-forming treatment if the potential of the adsorption surface measured by the measuring device 1201 exceeds the upper limit potential of the level at which film-forming treatment can be performed (hereinafter, the exclusion of the substrate to be processed for film-forming treatment is also referred to as "substrate exclusion").

[0125] In addition to the above, the control device 14 can also control the film formation process by adjusting the voltage applied to the electrostatic chuck 15 and by removing static electricity through an electrostatic removal device.

[0126] As a control for the film-forming process, the control device 14 of this embodiment can independently perform the following processes: adjusting the voltage applied to the electrostatic chuck 15, controlling the static eliminator, removing the object from the film-forming process (substrate removal), and controlling both the adjustment of the voltage applied to the electrostatic chuck 15 and the static eliminator.

[0127] In addition, when static elimination is performed using static elimination devices (350, 501), a process is performed that reflects the measurement results measured on the substrate 100 into the static elimination process (feedforward control in static elimination process).

[0128] According to the film-forming apparatus 1 of this embodiment, the voltage applied to the electrode portion of the electrostatic chuck 15 can be controlled based on the surface potential of the adsorption surface 100a of the substrate 100, which is measured before the substrate 100 contacts the electrostatic chuck 15. Alternatively, the static elimination process performed by the static elimination device (350, 501) can be controlled based on the measurement result of the surface potential of the adsorption surface 100a. Alternatively, the substrate 100 whose surface potential has been measured can be excluded from the film-forming process based on the measurement result of the measuring device 1201. Alternatively, both the adjustment of the voltage applied to the electrostatic chuck 15 and the static elimination performed by the static elimination device can be controlled.

[0129] <Overall processing flow performed by film-forming device 1>

[0130] Figure 14 This is a flowchart illustrating the overall processing flow performed by the film-forming apparatus 1. This flowchart shows a general outline of the processes performed by the film-forming apparatus 1 on a substrate 100.

[0131] S201 is a pretreatment step. In this step, as a pretreatment for film formation, an antistatic treatment is performed based on the control of an antistatic device (Structure Examples 1 to 8). Based on the magnitude of the measurement potential measured by the measuring device 1201, the control device 14 changes the setting of a predetermined voltage applied to the electrode portion of the electrostatic chuck 15 (feedforward control). In this embodiment, the film formation apparatus 1 measures the surface potential of the substrate and controls the voltage applied to the electrostatic chuck 15 before the substrate 100 contacts the electrostatic chuck 15, thus performing the control of the voltage applied to the electrostatic chuck 15 and the antistatic treatment of the substrate 100 in advance. The specific processing flow of the pretreatment step is as follows: Figure 13 The same processing flow as the flowchart.

[0132] S202 is the adsorption process. For example, the control device 14 raises the substrate support unit 6 of the support substrate 100 to a predetermined position. The control device 14 generates an adsorption force by applying a modified voltage to the electrostatic chuck 15, causing the electrostatic chuck 15 to adsorb the substrate 100.

[0133] S203 is the alignment process. The control device 14 lowers the electrostatic chuck 15, which holds the substrate 100, to bring the substrate 100 close to the mask 101 via the distance adjustment unit 22. Then, the horizontal position of the substrate 100 and the mask 101 is adjusted by the position adjustment unit 20.

[0134] S204 is the film deposition process. As preparation, the control device 14 brings the aligned substrate 100 into contact with the mask 101. Next, the control device 14 lowers the plate unit 9 and uses the magnetic force of the magnet plate 11 to bring the substrate 100 and mask 101 into closer contact. In this state, the control device 14 deposits the vapor deposition material onto the substrate 100 via the film deposition unit 4.

[0135] S205 is the peeling process. The control device 14 peels the substrate 100 from the electrostatic chuck 15 by stopping the voltage applied to the electrode portion of the electrostatic chuck 15. It should be noted that the control device 14 may also reduce the voltage applied to the electrode portion to a level where the electrostatic chuck 15 can no longer maintain the adhesion of the substrate 100 without stopping the voltage applied to the electrode portion.

[0136] S206 is the delivery process. In this process, the substrate 100 is delivered from the film forming apparatus to the outside of the apparatus by the conveying robot 302a.

[0137] <Other Implementation Methods>

[0138] The present invention can also be implemented by providing a program that implements one or more functions of the above embodiments to a system or device via a network or storage medium, wherein one or more processors in the computer of the system or device read and execute the processing of the program. Alternatively, it can be implemented by a circuit (e.g., an ASIC) that implements one or more functions.

[0139] This invention is not limited to the embodiments described above, and various changes and modifications can be made without departing from the spirit and scope of the invention. Therefore, claims are appended to disclose the scope of the invention.

[0140] This application claims priority based on Japanese Patent Application No. 2023-156497, filed on September 21, 2023, the entire contents of which are incorporated herein by reference.

[0141] Explanation of reference numerals in the attached figures

[0142] 1: Film forming apparatus, 14: Control device, 15: Electrostatic chuck, 8: Alignment unit, 10: Evaporation unit (film forming source), 62, 63: Substrate support (substrate support claw), 100: Substrate, 100a: Adsorption surface, 101: Mask, 302a: Transport robot, 307a: Transport robot, 350: Static eliminator (ion generator), 501: Static eliminator (static eliminator robot), 504: Static diffusing material.

Claims

1. A film-forming apparatus for forming a film of a vapor-deposited material on a substrate adsorbed onto an electrostatic chuck, characterized in that, The film-forming apparatus includes: A measuring component measures the potential of the adsorption surface of the substrate to be adsorbed by the electrostatic chuck along the transport path before the substrate is adsorbed by the electrostatic chuck. as well as A control component that controls the film-forming process based on the measurement results of the measuring component.

2. The film-forming apparatus as described in claim 1, characterized in that, The control component controls the voltage applied to the electrostatic chuck based on the measurement results of the measuring component.

3. The film-forming apparatus as described in claim 1 or 2, characterized in that, The film-forming apparatus also includes an antistatic component, which removes static electricity from the adsorption surface of the substrate along the transport path. The control component controls the static elimination component based on the measurement results of the measuring component.

4. The film-forming apparatus as described in claim 3, characterized in that, The static eliminator has an ion generator that irradiates the adsorption surface of the substrate with ultraviolet light to induce ionization.

5. The film-forming apparatus as described in claim 3, characterized in that, The static eliminator component is made of a material with a size of 1×10 4 Ω or higher and less than 1×10 11 A component formed from a material with a surface resistance of Ω and electrostatic diffusion properties comes into contact with the adsorption surface on the transport path, thereby destaticating the adsorption surface.

6. The film-forming apparatus as described in claim 5, characterized in that, The antistatic component comprises a part having multiple protruding shapes or a sheet-like part, formed from the material having electrostatic diffusion properties, which contacts the adsorption surface on the transport path to remove static electricity from the adsorption surface. The sheet-like part has two-dimensional extension.

7. The film-forming apparatus as described in claim 5, characterized in that, The antistatic component includes a substrate support member that contacts the adsorption surface of the substrate when supporting the periphery of the substrate, and is a component formed from the material having electrostatic diffusion properties.

8. The film-forming apparatus as described in claim 1, characterized in that, If the potential of the adsorption surface measured by the measuring member exceeds the upper limit potential of the level at which film formation processing can be performed, the control member excludes the substrate from the substrate to be processed for film formation.

9. The film-forming apparatus as claimed in claim 1, characterized in that, The film-forming apparatus further includes an alignment member that adjusts the relative position of the substrate and the mask based on measurement results of alignment marks formed on the substrate and the mask, respectively.

10. The film-forming apparatus as described in claim 9, characterized in that, The alignment member adjusts the relative positions of the substrate and the mask adsorbed by the electrostatic chuck.

11. The film-forming apparatus as claimed in claim 1, characterized in that, The film-forming apparatus is an upward deposition type film-forming apparatus. The vertically upper side of the substrate is the adsorption surface, and the vertically lower side of the substrate is the film-forming surface. A thin film of vapor-deposited material with a predetermined pattern is formed on the film-forming surface of the substrate via a mask.

12. A film-forming apparatus for forming a film of a vapor-deposited material on a substrate adsorbed onto an electrostatic chuck, characterized in that, The film-forming apparatus includes: A measuring component measures the potential of the adsorption surface of the substrate to be adsorbed by the electrostatic chuck before the substrate is adsorbed by the electrostatic chuck. as well as A control component that controls the film-forming process based on the measurement results of the measuring component.

13. A film-forming method, comprising a film-forming apparatus for forming a vapor-deposited material on a substrate adsorbed on an electrostatic chuck, characterized in that, The film-forming method has the following characteristics: In the measurement process, on the transport path before the substrate is attracted by the electrostatic chuck, the potential of the adsorption surface of the substrate to be attracted by the electrostatic chuck is measured by a measuring component. as well as A control process is included in which the film-forming process is controlled based on the measurement results of the measurement process.

14. A film-forming method, comprising a film-forming apparatus for forming a vapor-deposited material on a substrate adsorbed on an electrostatic chuck, characterized in that, The film-forming method has the following characteristics: In the measurement process, before the substrate comes into contact with the electrostatic chuck, the potential of the adsorption surface of the substrate to be adsorbed by the electrostatic chuck is measured by a measuring component. as well as The control process involves controlling the film-forming process based on the measurement results from the measuring component.

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