Selective mass transfer based on temporary underfill for micro LED fabrication

By employing a combination of micro-LED isolation structures, transparent materials, and isolation substrates in micro-LED panels, the problems of insufficient efficiency, brightness, and lifespan in micro-LED panel manufacturing have been solved, resulting in a more efficient manufacturing process and display effect.

CN121844733APending Publication Date: 2026-04-10APPLIED MATERIALS INC
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Patent Information

Authority / Receiving Office
CN · China
Patent Type
Applications(China)
Current Assignee / Owner
Filing Date
2024-09-03
Publication Date
2026-04-10

AI Technical Summary

Technical Problem

Manufacturing micro-LED panels presents challenges, particularly in achieving high efficiency, brightness, and lifespan compared to OLEDs, and the manufacturing process is complex.

Method used

By combining micro-LEDs, micro-LED isolation structures, transparent materials, and isolation substrates, and through methods such as bonding, evaporating adhesives, and removing the carrier substrate, sub-pixel isolation structures are formed and color conversion materials are set, thereby achieving precise isolation and color conversion of micro-LEDs.

Benefits of technology

It improves the energy efficiency, brightness, and lifespan of micro LED panels, simplifies the manufacturing process, and achieves fewer material layers and higher display effects.

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Abstract

Embodiments of the present disclosure generally relate to an LED pixel and a method of manufacturing an LED pixel. The device includes a micro LED, a micro LED isolation structure, a transparent material, and an isolation substrate. And the micro LED is arranged above the back plate. Each micro LED is coupled to at least one backplane electrode of the backplane. And the micro LED isolation structure is arranged above the back plate. Each micro LED isolation structure is disposed between the at least one backplane electrode of an adjacent micro LED. The transparent material is disposed between the backplane electrodes over the backplane, between the micro LEDs, and over an emission surface of each of the micro LEDs. The isolation substrate has a sub-pixel isolation (SI) structure disposed therein. The SI structure defines a well of a sub-pixel. The sub-pixel has a color conversion material disposed in the well and on the isolation substrate. The transparent material is located between the color conversion materials.
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Description

TECHNICAL FIELD

[0001] Embodiments of the present disclosure generally relate to LED pixels and methods of manufacturing LED pixels. BACKGROUND

[0002] Light emitting diode (LED) panels use an array of LEDs, where individual LEDs provide individually controllable pixel elements. Such LED panels can be used in computers, touch panel devices, personal digital assistants (PDAs), cellular phones, television monitors, and the like. Compared to organic light emitting diodes (OLEDs), LED panels using micron-scale LEDs based on III-V semiconductor technology (also known as micro-LEDs) would have various advantages, such as higher energy efficiency, brightness, and lifetime, and fewer material layers in the display stack, which can simplify manufacturing. However, there are challenges in the manufacturing of micro-LED panels. Therefore, there is a need in the art for LED pixels and methods of manufacturing LED pixels. SUMMARY

[0003] In one embodiment, an apparatus is provided. The apparatus includes micro-LEDs, micro-LED isolation structures, a transparent material, and an isolation substrate. The micro-LEDs are disposed over a backplane. Each micro-LED is coupled to at least one backplane electrode of the backplane. The micro-LED isolation structures are disposed over the backplane. Each micro-LED isolation structure is disposed between at least one backplane electrode of adjacent micro-LEDs. The transparent material is disposed between the backplane electrodes over the backplane, between the micro-LEDs, and over an emission surface of each of the micro-LEDs. The isolation substrate has subpixel isolation (SI) structures disposed therein. The SI structures define wells of subpixels. The subpixels have color conversion materials disposed in the wells and on the isolation substrate. The transparent material is between the color conversion materials.

[0004] In another implementation, an apparatus is provided. The apparatus includes micro-LEDs, micro-LED isolation material, transparent material, and an isolation substrate. The micro-LEDs are disposed above a backplane. Each micro-LED is coupled to at least one backplane electrode of the backplane. The micro-LED isolation material is disposed above the backplane, between respective backplane electrodes of a pair of backplane electrodes, and between adjacent pairs of backplane electrodes of a respective micro-LED. The transparent material is disposed above the backplane and the micro-LED isolation material, between the micro-LEDs, and above an emission surface of each of the micro-LEDs. The isolation substrate has subpixel isolation (SI) structures disposed therein. The SI structures define wells of subpixels. The subpixels have color conversion material disposed in the wells and on the isolation substrate. The transparent material is between the color conversion material.

[0005] In another implementation, a method is provided. The method includes bonding target micro-LEDs to a backplane, disposing an adhesive material, evaporating a bonding agent, and removing a carrier substrate. Bonding target micro-LEDs includes bonding the target micro-LEDs to the backplane through a carrier substrate. The carrier substrate has target micro-LEDs and excess micro-LEDs between the target micro-LEDs. Disposing the adhesive material includes disposing the adhesive material between the target micro-LEDs, the excess micro-LEDs, and an underside surface of the carrier substrate. Evaporating a bonding agent includes evaporating a bonding agent between the carrier substrate and the emission surface of the target micro-LEDs. Removing the carrier substrate includes removing the carrier substrate with the excess micro-LEDs. BRIEF DESCRIPTION OF DRAWINGS

[0006] The patent or application file contains at least one drawing executed in color. Copies of this patent or patent application publication with color drawing(s) will be provided by the Office upon request and payment of the necessary fee. In the interest of expediting the examination of an application, a specific statement of the reason or reasons for the color drawings is not required. In order that the above-recited features of the present disclosure can be understood in detail, a more particular description of the disclosure, some embodiments of which will be described in detail, can be seen below. It is to be understood that the foregoing general description is intended to be illustrative only and is not to be used in limiting the scope of the concept as claimed.

[0007] FIG. 1A is a cross-sectional view of a pixel having a first isolation arrangement in accordance with some embodiments.

[0008] FIG. 1B is a cross-sectional view of a pixel having a second isolation arrangement in accordance with some embodiments.

[0009] FIG. 1CIt is a cross-sectional view of pixels having a third isolation arrangement according to some embodiments.

[0010] FIG. 1D It is a cross-sectional view of pixels having a fourth isolation arrangement according to some embodiments.

[0011] FIG. 2 This is a flowchart of a method for manufacturing pixels according to some implementation methods.

[0012] FIGS. 3A-3H This is a schematic cross-sectional view of the back panel during the method according to some embodiments.

[0013] To facilitate understanding, the same reference numerals are used to denote common elements in the figures where possible. Elements and features of one embodiment are contemplated to be advantageously incorporated into other embodiments without further description. Detailed Implementation

[0014] The embodiments of this disclosure generally relate to LED pixels and methods of manufacturing LED pixels. Specifically, an embodiment includes an apparatus comprising a backplate, at least three microLEDs disposed on the backplate, and a subpixel isolation (SI) structure defining at least three subpixels. The at least three subpixels have a color conversion material disposed in the wells. Furthermore, an embodiment includes a method. The method includes bonding target microLEDs to a backplate, distributing an adhesive material, evaporating the adhesive, and removing a carrier substrate. The target microLEDs are bonded to the backplate via a carrier substrate. The carrier substrate has target microLEDs and excess microLEDs between the target microLEDs. An adhesive material is then disposed between the target microLEDs, the excess microLEDs, and a lower surface of the carrier substrate. The adhesive between the carrier substrate and the emitting surfaces of the target microLEDs is then evaporated, and the carrier substrate with the excess microLEDs is removed.

[0015] FIG. 1A It is a schematic cross-sectional view of pixels 100 having a first isolation arrangement 100a. FIG. 1B It is a schematic cross-sectional view of pixel 100 having a second isolation arrangement 100b. FIG. 1C It is a schematic cross-sectional view of pixel 100 having a third isolation arrangement 100c. FIG. 1D It is a schematic cross-sectional view of pixel 100 with a fourth isolation arrangement 100d.

[0016] Backplane 101 includes a backplane surface 101a. MicroLEDs 109 are disposed above backplane 101. The backplane 101 includes backplane electrodes 103 disposed on the backplane surface 101a. Each microLED 109 has at least one microLED electrode 107 coupled to at least one backplane electrode 103 of the backplane 101. In some embodiments, pairs of microLED electrodes 107 are coupled to pairs of backplane electrodes 103. The microLED electrodes 107 are bonded to the backplane electrodes 103 with a first adhesive 170.

[0017] like FIG. 1A As shown, the first isolation arrangement 100a of pixel 100 includes a sub-pixel isolation (SI) structure 113 disposed between micro-LEDs 109 on a backplane surface 101a. The SI structure 113 has an ultraviolet (UV) reflectance greater than 90%. The optical density of the SI structure 113 provides color isolation between the individual micro-LEDs in the micro-LEDs 109. The SI structure 113 defines a well 127 for sub-pixel 112. Sub-pixel 112 has a color conversion material 115 disposed in the well 127. Sub-pixel 112 includes a red sub-pixel 112a, wherein the red conversion material 115a is disposed in the well 127a of the red sub-pixel 112a; a green sub-pixel 112b, wherein the green conversion material 115b is disposed in the well 127b of the green sub-pixel 112b; and a blue sub-pixel 112c, wherein the blue conversion material 115c is disposed in the well 127c of the blue sub-pixel 112c. When the microLED 109 of the red subpixel 112a is turned on, the red conversion material converts the light emitted from the microLED 109 into red light. When the microLED 109 of the blue subpixel 112c is turned on, the blue conversion material 115c converts the light emitted from the microLED 109 into blue light.

[0018] Material 160 is disposed above the backplate 101, between the backplate electrodes 103, between the micro-LEDs 109, and above the emitting surface 105 of each micro-LED in the micro-LEDs 109. Material 160 includes an organic encapsulating material.

[0019] like FIG. 1B As shown, the second isolation arrangement 100b of pixel 100 includes a transparent material 117. This transparent material 117 is disposed above the emitting surface 105 of the micro-LED 109. In an embodiment having a top substrate 123, the transparent material 117 is further disposed between the surfaces of the backplate 101 and the top substrate 123. The transparent material 117 includes an adhesive material. The adhesive material includes, but is not limited to, epoxides, acrylic materials, and combinations thereof. The acrylic material may be a UV-transparent material.

[0020] An isolation substrate 119 has an SI structure 113 disposed on an isolation surface 119a. The isolation substrate 119 is disposed above a backplate 101. The SI structure 113 defines a well 127 for a sub-pixel 112. The sub-pixel 112 has a color conversion material 115 disposed in the well 127 and on the isolation surface 119a of the isolation substrate 119. The sub-pixel 112 has a color filter 125 disposed on a top substrate surface 119b. The sub-pixel 112 includes a red sub-pixel 112a, wherein a red conversion material 115a is disposed in the well 127a of the red sub-pixel 112a, and a red filter 125a is disposed above the red conversion material 115a. The sub-pixel 112 includes a green sub-pixel 112b, wherein a green conversion material 115b is disposed in the well 127b of the green sub-pixel 112b, and a green filter 125b is disposed above the green conversion material 115b. The sub-pixels 112 include a blue sub-pixel 112c, wherein a blue conversion material 115c is disposed in a well 127c of the blue sub-pixel 112c, and a blue filter 125c is disposed above the blue conversion material 115c. When the microLED 109 of the red sub-pixel 112a is turned on, the red conversion material converts the light emitted from the microLED 109 into red light. When the microLED 109 of the blue sub-pixel 112c is turned on, the blue conversion material 115c converts the light emitted from the microLED 109 into blue light.

[0021] In some embodiments, the second isolation arrangement 100b includes a top substrate 123. The top substrate 123 includes an isolation matrix structure 121 disposed between the top substrate 123 and an isolation substrate 119. A color filter 125 is disposed between the top substrate 123 and the isolation substrate 119. The color filter 125 includes photoresist with a colorant. The isolation matrix structure 121 is aligned with the SI structure 113. The color filter 125 is aligned with a color conversion material 115.

[0022] An isolation matrix structure 121 and a color filter 125 are disposed between an isolation substrate 119 and a top substrate 123. The color filter 125 is defined by the isolation matrix structure 121, the isolation substrate 119, and the top substrate 123. The top substrate 123, the isolation substrate 119, and the SI structure 113 are surrounded by and coupled to a transparent material 117. The isolation matrix structure 121 includes, but is not limited to, a black matrix material.

[0023] like FIG. 1CAs shown, the third isolation arrangement 100c includes micro-LED isolation structures 150a. These micro-LED isolation structures 150a are disposed above the backplate 101. Each micro-LED isolation structure 150a is disposed between adjacent micro-LEDs 109. A transparent material 117 is disposed between the micro-LED isolation structure 150a and at least one backplate electrode 103 of an adjacent micro-LED 109. The transparent material 117 is disposed between the backplate electrodes 103 above the backplate, between the micro-LEDs, and above the emitting surface of each of the micro-LEDs. In some embodiments, the transparent material 117 surrounds each micro-LED isolation structure 150a. In some embodiments, the SI structure 113 is aligned with the micro-LED isolation structure 150a. In some embodiments, the micro-LED isolation structures 150a are disposed between the wells 127. In some embodiments, the micro-LED isolation structures 150a are disposed between the micro-LEDs 109 and the backplate 101. In some embodiments, a micro-LED isolation structure 150a is disposed between the emitting surface 105 of the micro-LED 109 and the backplate 101.

[0024] like FIG. 1D As shown, the fourth isolation arrangement 100d includes a micro-LED isolation material 150b. The micro-LED isolation material 150b is disposed above the backplate 101, between each backplate electrode 103. In some embodiments, the micro-LED isolation material 150b is disposed above the backplate 101, between each of the paired backplate electrodes 103, and between adjacent paired backplate electrodes 103 of the respective target micro-LED 109x. A transparent material 117 is disposed on the micro-LED isolation material 150b. In some embodiments, the micro-LED isolation material 150b is disposed between the emitting surface 105 of the micro-LED 109 and the backplate 101. In some embodiments, the micro-LED isolation material 150b is disposed between and in contact with the paired backplate electrodes 103. In some embodiments, the micro-LED isolation material 150b is disposed between the color conversion material 115 of the trap 127 and the backplate 101.

[0025] FIG. 2 This is a flowchart of a method 200 for forming pixel 100 according to some implementation methods. FIGS. 3A-3H This is a schematic cross-sectional view of the backplate 101 during method 200. In operation 201, as... FIG. 3AAs shown, micro-LEDs 109 are bonded to a backplate 101 using a first adhesive 170. The backplate 101 has backplate electrodes 103 disposed on a surface 101a of the backplate 101. A carrier substrate 301 has a lower surface 303. A plurality of micro-LEDs 109 are coupled to the carrier substrate 301. The plurality of micro-LEDs 109 are bonded to the lower surface 303 of the carrier substrate 301 using a second adhesive 315. The plurality of micro-LEDs 109 includes a target micro-LED 109x and redundant micro-LEDs 109y. The target micro-LED 109x is bonded to the backplate 101 using the first adhesive 170. The redundant micro-LEDs 109y are not bonded to the backplate 101. Utilizing a carrier substrate 301 with redundant micro-LEDs 109y reduces production costs, thereby reducing the overall cost of micro-LED manufacturing.

[0026] The micro-LED electrode 107 is bonded to the backplane electrode 103 via a first adhesive 170. The first adhesive 170 may be a melt process. This melt process forms an alloy. This alloy may be the first adhesive 170 between the micro-LED electrode 107 and the backplane electrode 103. The carrier substrate 301 may be made of a ceramic material. The ceramic material may include sapphire, SiN, AlN, Si, SiO2, GaN, or combinations thereof.

[0027] like FIG. 3B As shown, a micro-LED isolation structure 150a is disposed above the backplate 101. The micro-LED isolation structure 150a is disposed before the micro-LEDs 109 are bonded to the backplate 101. The isolation structure 150a is disposed between at least one backplate electrode 103 of adjacent micro-LEDs 109. When the micro-LEDs 109 are bonded, the target micro-LED 109x is disposed above the backplate electrode 103. When the micro-LEDs 109 are bonded, the excess micro-LEDs 109y are disposed above the micro-LED isolation structure 150a.

[0028] like FIG. 3C As shown, a micro-LED insulating material 150b is disposed above the backplate 101. The micro-LED insulating material 150b is disposed before the micro-LEDs 109 are bonded to the backplate 101. The micro-LED insulating material 150b is disposed between at least one backplate electrode 103 of adjacent micro-LEDs 109. When the micro-LEDs 109 are bonded, a target micro-LED 109x is disposed above the backplate electrode 103. When the micro-LEDs 109 are bonded, excess micro-LEDs 109y are disposed above the micro-LED insulating material 150b.

[0029] At operation 203, such as FIG. 3DAs shown, adhesive material 307 is disposed between the micro-LEDs 109 on the lower surface 303 of the carrier substrate 301. In some embodiments, the adhesive material is disposed between the micro-LEDs 109, the carrier substrate 301, and the backplate 101. Adhesive material 307 is also disposed between the backplate surface 101a and the lower surface 303 of the carrier substrate 301. In some embodiments, adhesive material 307 is disposed by flowing the adhesive material 307 between the backplate surface 101a, the lower surface 303, the gaps between pairs of micro-LED electrodes 107, the gaps between pairs of backplate electrodes 103, and the gaps between the micro-LEDs 109. Adhesive material 307 can be disposed from the corners of the pixel 100. In some embodiments, adhesive material 307 is disposed in the corners using a syringe or dispenser. The adhesive material 307 can be disposed in a vacuum environment. Adhesive material 307 is cured after operation 203. In some embodiments, adhesive material 307 is photocured. In some embodiments, the adhesive 307 is thermosetting. The adhesive 307 can be a thermosetting organic adhesive or a photocurable organic adhesive, such as an acrylic adhesive or an epoxy adhesive.

[0030] At operation 205, such as FIG. 3E As shown, a second adhesive 315 evaporates between the emitting surface 105 of the target microLED 109x and the lower surface 303 of the carrier substrate 301. In some embodiments, the second adhesive 315 is not evaporated between the emitting surfaces 105 of the excess microLED 109y. In some embodiments, the second adhesive 315 evaporates between the emitting surface 105 of the target microLED 109x and the lower surface 303 of the carrier substrate 301. The excess microLED 109y remains coupled to the carrier substrate 301. The second adhesive 315 can be evaporated using light 309. For example, light 309 can be a laser. The laser wavelength can be selected based on the carrier substrate 301 and its absorbance. The laser wavelength can be between 190 nm and 250 nm. In one embodiment, the laser wavelength can be 248 nm. The laser integrated flux may be between 0.6 J / cm² and 1.1 J / cm². In addition, the scanning frequency of the laser may range from 5 Hz to 40 Hz.

[0031] At operation 207, the carrier substrate 301 is removed. In some embodiments, such as FIG. 3F As shown, after the carrier substrate 301 is removed, the adhesive material 307 remains on the backplate 101. In embodiments where the adhesive material 307 is retained after the carrier substrate 301 is removed, the adhesive material 307 is subsequently removed, as shown in the figure. FIG. 3G As shown. Adhesive material 307 can be removed with a solvent.

[0032] In some implementations, such as FIG. 3H As shown, adhesive material 307 is removed before operation 207. As shown, adhesive material 307 is removed after the second adhesive 315 has evaporated but before the carrier substrate 301. In those embodiments, the target microLED 109x is no longer bonded to the carrier substrate 301.

[0033] To form the first isolation arrangement 100a of pixel 100, an SI structure 113 is disposed on the backplate 101. The SI structure 113 and the emitting surface 105 form a well 127. Subsequently, the color conversion material 115 of sub-pixel 112 is disposed in the well 127, such as... FIG. 1A As shown.

[0034] To form the second isolation arrangement 100b of pixel 100, a top substrate 123 is disposed above the back plate 101. The top substrate 123 is positioned such that the SI structure 113 and the micro-LED 109 are aligned. The top substrate 123 includes an isolation matrix structure 121 and a color filter 125 disposed on the isolation matrix structure. An isolation substrate 119 is coupled to the isolation matrix structure 121 and the color filter 125. The isolation substrate 119 is disposed between the top substrate 123 and the back plate 101. The SI structure 113 is disposed on the isolation surface 119a of the isolation substrate 119. A color conversion material 115 is disposed on the isolation surface 119a of the isolation substrate 119. FIG. 1B As shown, after the SI structure 113 is aligned with the micro LED 109, a transparent material 117 is applied.

[0035] To form the third isolation arrangement 100c of pixel 100, a top substrate 123 is disposed above a back plate 101. The back plate 101 includes a micro-LED isolation structure 150a disposed above it. The top substrate 123 is positioned such that the SI structure 113 and the micro-LED 109 are aligned. The top substrate 123 includes an isolation matrix structure 121 and a color filter 125 disposed on the isolation matrix structure. An isolation substrate 119 is coupled to the isolation matrix structure 121 and the color filter 125. The isolation substrate 119 is disposed between the top substrate 123 and the back plate 101. The SI structure 113 is disposed on the isolation surface 119a of the isolation substrate 119. A color conversion material 115 is disposed on the isolation surface 119a of the isolation substrate 119. FIG. 1C As shown, after the SI structure 113 is aligned with the micro LED 109, a transparent material 117 is applied.

[0036] To form the fourth isolation arrangement 100d of pixel 100, a top substrate 123 is disposed above a back plate 101. The back plate 101 includes micro-LED isolation material 150b disposed above the back plate. The top substrate 123 is positioned such that the SI structure 113 and the micro-LED 109 are aligned. The top substrate 123 includes an isolation matrix structure 121 and a color filter 125 disposed on the isolation matrix structure. An isolation substrate 119 is coupled to the isolation matrix structure 121 and the color filter 125. The isolation substrate 119 is disposed between the top substrate 123 and the back plate 101. The SI structure 113 is disposed on the isolation surface 119a of the isolation substrate 119. A color conversion material 115 is disposed on the isolation surface 119a of the isolation substrate 119. FIG. 1C As shown, after the SI structure 113 is aligned with the micro LED 109, a transparent material 117 is applied.

[0037] Although the foregoing embodiments of this disclosure are described, other and further embodiments of this disclosure may be designed without departing from the basic scope of this disclosure, and the scope of this disclosure is defined by the appended claims.

Claims

1. An apparatus, the apparatus comprising: Micro LEDs are disposed above a backplate, and each micro LED is coupled to at least one backplate electrode of the backplate. A micro LED isolation structure is disposed above the backplate, and each micro LED isolation structure is disposed between at least one backplate electrode of an adjacent micro LED; A transparent material is disposed between the backplate electrodes above the backplate, between the microLEDs, and above the emitting surface of each of the microLEDs. as well as An isolation substrate having a sub-pixel isolation (SI) structure disposed therein, the SI structure defining a well for a sub-pixel, the sub-pixel having a color conversion material disposed in the well and on the isolation substrate, the transparent material being between the color conversion materials in the well.

2. The device of claim 1, wherein the transparent material is disposed between the microLED isolation structure and the back electrode of the microLED.

3. The device of claim 1, further comprising a top substrate having a matrix structure and a color filter disposed between the top substrate and the isolation substrate, the matrix structure being aligned with the SI structure and the micro-LED isolation structure, and the color filter being aligned with the color conversion material.

4. The device of claim 1, wherein the SI structure is aligned with the micro-LED isolation structure.

5. The device of claim 1, wherein the micro-LED isolation structure is disposed between the traps.

6. The device of claim 1, wherein the microLED isolation structure is disposed between the microLED and the backplate.

7. The device of claim 1, wherein the microLED isolation structure is disposed between the emitting surface of the microLED and the backplate.

8. The device of claim 1, wherein each microLED includes at least one microLED electrode, the at least one microLED electrode being coupled to the at least one backplane electrode.

9. An apparatus, the apparatus comprising: Micro LEDs are disposed above a backplate, and each micro LED is coupled to a pair of backplate electrodes of the backplate. A micro LED isolation material is disposed above the backplate, between each backplate electrode of the paired backplate electrodes, and between adjacent pairs of backplate electrodes of the corresponding micro LEDs. A transparent material is disposed above the backplate and the micro-LED insulating material, between the micro-LEDs, and above the emitting surface of each micro-LED. as well as An isolation substrate having a sub-pixel isolation (SI) structure disposed therein, the SI structure defining a well for a sub-pixel, the sub-pixel having a color conversion material disposed in the well and on the isolation substrate, the transparent material being between the color conversion materials in the well.

10. The device of claim 9, wherein the microLED insulating material is disposed between the transparent material and the backplate.

11. The apparatus of claim 9, further comprising a top substrate having a matrix structure and a color filter disposed between the top substrate and the isolation substrate, the matrix structure being aligned with the SI structure and the color filter being aligned with the color conversion material.

12. The device of claim 9, wherein each microLED includes at least one microLED electrode, the at least one microLED electrode being coupled to the at least one backplane electrode.

13. The device of claim 9, wherein the microLED insulating material is disposed between the emitting surface of the microLED and the backplate.

14. The device of claim 9, wherein the microLED insulating material is disposed between the pair of backplate electrodes and in contact with the pair of backplate electrodes.

15. The device of claim 9, wherein the microLED insulating material is disposed between the color conversion material of the trap and the backplate.

16. A method, the method comprising: A target microLED is bonded to a backplate, the target microLED being bonded to the backplate via a carrier substrate having the target microLED and additional microLEDs between the target microLED; An adhesive material is provided between the target microLED, the excess microLED, and the lower surface of the carrier substrate; Evaporate the adhesive between the carrier substrate and the emitting surface of the target microLED; and Remove the carrier substrate containing the excess microLEDs.

17. The method of claim 16, further comprising: The adhesive material is removed before the carrier substrate is removed, wherein the adhesive material is disposed between the microLED isolation structure of the target microLED and at least one backplate electrode of an adjacent target microLED.

18. The method of claim 16, further comprising: After removing the carrier substrate, the adhesive material is removed, wherein the adhesive material is disposed between the microLED isolation structure of the target microLED and at least one backplate electrode of an adjacent target microLED.

19. The method of claim 16, further comprising: After removing the carrier substrate, the adhesive material is removed, wherein the adhesive material is disposed above the microLED isolation material, which is disposed above the backplate and between the target microLED and at least one backplate electrode of an adjacent target microLED.

20. The method of claim 16, further comprising: The adhesive material is removed before the carrier substrate is removed, wherein the adhesive material is disposed above the microLED isolation material, which is disposed above the backplate and between the target microLED and at least one backplate electrode of an adjacent target microLED.