Display substrate and display device

Abstract

At least one embodiment of the invention provides a display substrate and a display device. The display substrate comprises a substrate; the light-emitting device comprises a substrate, a light-emitting element arranged on the substrate, the light-emitting element comprises a first electrode, the first electrode comprises a conductive metal oxide layer, a reflection structure is arranged between at least part of the conductive metal oxide layer and the substrate, and the reflection structure is arranged on the side, close to the substrate, of the conductive metal oxide layer. The reflection structure serves as a reflection layer of the first electrode, the light emitting efficiency of the display substrate is improved, and the display substrate capable of being produced in mass is formed.

Description

Display substrate and display device TECHNICAL FIELD

[0001] Embodiments of the present disclosure relate to a display substrate and a display device. BACKGROUND

[0002] An organic light emitting diode (OLED) is a self-luminous display device that does not require any light source, i.e., an active light emitting display device, and has advantages of high light emitting efficiency, wide viewing angle, high contrast, low driving voltage, extremely high response speed, lightness and thinness, bendability, and low cost, thereby having a good development prospect in the field of display technology. The OLED includes an emission layer formed between two electrodes, and generates excitons by injecting electrons and holes into the emission layer through an electron injection electrode (i.e., a cathode) and a hole injection electrode (i.e., an anode) and recombining the electrons and holes within the emission layer, and can emit light when the excitons transition from an excited state to a ground state.

[0003] As a display device, the OLED has gradually matured through years of development, and the share of the OLED in the market of display products has gradually increased. In the development process of the OLED display device, the OLED display device has evolved from a bottom emission device to a top emission device.

[0004] SUMMARY

[0005] At least one embodiment of the present disclosure provides a display substrate and a display device. The display substrate includes a substrate, and a light emitting element disposed on the substrate. The light emitting element includes a first electrode including a conductive metal oxide layer. A reflective structure is included between at least part of the conductive metal oxide layer and the substrate, and the reflective structure is on a side of the conductive metal oxide layer close to the substrate. Embodiments of the present disclosure improve the light emitting efficiency of the display substrate by designing the reflective structure as a reflective part of the first electrode, and form a display substrate that can be mass-produced.

[0006] At least one embodiment of the present disclosure provides a display substrate. The display substrate includes a substrate, and a light emitting element disposed on the substrate. The light emitting element includes a first electrode including a conductive metal oxide layer. A reflective structure is included between at least part of the conductive metal oxide layer and the substrate, and the reflective structure is on a side of the conductive metal oxide layer close to the substrate.

[0007] For example, in the display substrate provided by at least one of the embodiments of the present disclosure, the reflective structure comprises a plurality of first units stacked, and each of the first units comprises a first reflective film and a second reflective film stacked, and a first refractive index of the first reflective film is greater than a second refractive index of the second reflective film.

[0008] For example, in the display substrate provided by at least one of the embodiments of the present disclosure, the first reflective film and the second reflective film are made of inorganic material, organic material, or a combination of inorganic material and organic material.

[0009] For example, in the display substrate provided by at least one of the embodiments of the present disclosure, the first reflective film is made of at least one of Nb2O5, TA2O5, TiO2, and epoxy resin, and the second reflective film is made of SiO2.

[0010] For example, in the display substrate provided by at least one of the embodiments of the present disclosure, the light-emitting element is a blue light-emitting element, and a difference between the first refractive index and the second refractive index is greater than or equal to 0.4.

[0011] For example, in the display substrate provided by at least one of the embodiments of the present disclosure, the reflective structure comprises six or more first units.

[0012] For example, in the display substrate provided by at least one of the embodiments of the present disclosure, the light-emitting element is a green light-emitting element, and a difference between the first refractive index and the second refractive index is greater than or equal to 0.7.

[0013] For example, in the display substrate provided by at least one of the embodiments of the present disclosure, the light-emitting element is a red light-emitting element, and a difference between the first refractive index and the second refractive index is greater than or equal to 0.5.

[0014] For example, in the display substrate provided by at least one of the embodiments of the present disclosure, the light-emitting element comprises a blue light-emitting element and a green light-emitting element, and a difference between the first refractive index and the second refractive index is greater than or equal to 1.

[0015] For example, in the display substrate provided by at least one of the embodiments of the present disclosure, the light-emitting element comprises a blue light-emitting element, a green light-emitting element, and a red light-emitting element, and a difference between the first refractive index and the second refractive index is greater than or equal to 1.4.

[0016] For example, in the display substrate provided by at least one of the embodiments of the present disclosure, the conductive metal oxide layer has a thickness of 50 angstroms to 400 angstroms.

[0017] For example, in the display substrate provided by at least one of the embodiments of the present disclosure, a refractive index of a layer of the reflective structure in contact with the conductive metal oxide layer is greater than or equal to 2.2.

[0018] For example, the display substrate provided by at least one of the embodiments of the present disclosure further includes a driving transistor disposed between the light emitting element and the substrate, and a planarization layer disposed between the driving transistor and the light emitting element, wherein the driving transistor is configured to drive the light emitting element to emit light, and the first electrode is electrically connected to the first source / drain electrode of the driving transistor through a via structure disposed in the planarization layer.

[0019] For example, in the display substrate provided by at least one of the embodiments of the present disclosure, the reflective structure covers the side surface of the planarization layer and the surface away from the substrate.

[0020] For example, in the display substrate provided by at least one of the embodiments of the present disclosure, the thickness of the planarization layer is 0.8 microns to 2 microns.

[0021] For example, in the display substrate provided by at least one of the embodiments of the present disclosure, the reflective structure has a stepped portion at the position of the via structure, and the planar shape of the stepped portion includes at least one of a circular ring shape and a polygonal ring shape.

[0022] For example, in the display substrate provided by at least one of the embodiments of the present disclosure, the planar shape of the stepped portion is a circular ring shape, the circular ring shape includes a first circular shape located on the outer side, the planar shape of the via structure is a second circular shape, and the ratio of the diameter of the first circular shape to the diameter of the second circular shape is greater than or equal to 0.5 and less than 1.

[0023] For example, in the display substrate provided by at least one of the embodiments of the present disclosure, the slope angle of the stepped portion is greater than 0 o and less than or equal to 60 o .

[0024] For example, in the display substrate provided by at least one of the embodiments of the present disclosure, the reflective structure is a structure disposed on the whole surface, and only has an opening at the position corresponding to the via structure.

[0025] For example, in the display substrate provided by at least one of the embodiments of the present disclosure, the light emitting element includes a red light emitting element, a green light emitting element, and a blue light emitting element, the first electrode of the red light emitting element includes a laminated structure of a first indium tin oxide layer, a silver metal layer, and a second indium tin oxide layer, the first electrode of at least one of the green light emitting element and the blue light emitting element includes a third indium tin oxide layer, and the reflective structure is provided between the third indium tin oxide layer and the substrate.

[0026] For example, in the display substrate provided by at least one of the embodiments of the present disclosure, the first electrode of the green light emitting element and / or the blue light emitting element further comprises a metal reflection layer on the side of the reflection structure close to the substrate.

[0027] At least one of the embodiments of the present disclosure further provides a display substrate, comprising a substrate, a light emitting element on one side of the substrate, a driving transistor between the light emitting element and the substrate, and a reflection structure between the light emitting element and the substrate, wherein the reflection structure is provided on the whole surface and has a plurality of openings arranged in an array, and the light emitting element is connected to the driving transistor through the openings.

[0028] For example, in the display substrate provided by at least one of the embodiments of the present disclosure, the light emitting element comprises a red light emitting element, a green light emitting element and a blue light emitting element, the first electrode of the red light emitting element comprises a first indium tin oxide layer, a silver metal layer and a second indium tin oxide layer in a stacked structure, the first electrode of at least one of the green light emitting element and the blue light emitting element comprises a third indium tin oxide layer, and the third indium tin oxide layer has the reflection structure between the third indium tin oxide layer and the substrate.

[0029] For example, in the display substrate provided by at least one of the embodiments of the present disclosure, the first electrode of the green light emitting element comprises a first indium tin oxide layer, a silver metal layer and a second indium tin oxide layer in a stacked structure, the first electrode of the blue light emitting element comprises the third indium tin oxide layer, and the third indium tin oxide layer has the reflection structure between the third indium tin oxide layer and the substrate.

[0030] For example, in the display substrate provided by at least one of the embodiments of the present disclosure, the first electrode of the green light emitting element and the blue light emitting element both comprises the third indium tin oxide layer, and the third indium tin oxide layer has the reflection structure between the third indium tin oxide layer and the substrate.

[0031] For example, in the display substrate provided by at least one of the embodiments of the present disclosure, the first electrode of the red light emitting element, the first electrode of the green light emitting element and the first electrode of the blue light emitting element are all electrically connected to the corresponding driving transistor.

[0032] At least one of the embodiments of the present disclosure further provides a display device comprising any one of the display substrates described above. BRIEF DESCRIPTION OF DRAWINGS

[0033] In order to more clearly illustrate the technical solutions of the embodiments of the present disclosure, the drawings of the embodiments will be briefly introduced below. Obviously, the drawings described below only relate to some of the embodiments of the present disclosure, but not limit the present disclosure.

[0034] FIG. 1 is a schematic diagram of a cross-sectional structure of a display substrate;

[0035] FIG. 2 is a schematic diagram of a cross-sectional structure of a display substrate provided by at least one embodiment of the present disclosure;

[0036] FIG. 3 is a schematic diagram of a cross-sectional structure of a reflective structure shown in FIG. 2;

[0037] FIG. 4 is a schematic diagram of a cross-sectional structure of a packaging structure provided by at least one embodiment of the present disclosure;

[0038] FIG. 5 is a schematic diagram of a cross-sectional structure of another display substrate provided by at least one embodiment of the present disclosure;

[0039] FIG. 6 is a distribution diagram of a first luminance distribution curve, a second luminance distribution curve, and a third luminance distribution curve combined according to at least one embodiment of the present disclosure;

[0040] FIG. 7 is a schematic diagram of a cross-sectional structure of still another display substrate provided by at least one embodiment of the present disclosure;

[0041] FIG. 8 is a schematic diagram of a planar structure of a reflective structure in FIG. 7 at a via structure;

[0042] FIG. 9 is a schematic diagram of an enlarged cross-sectional structure of the reflective structure in FIG. 7 at the via structure;

[0043] FIG. 10 is a schematic diagram of a cross-sectional structure of still another display substrate provided by at least one embodiment of the present disclosure;

[0044] FIG. 11 is a schematic diagram of a cross-sectional structure of still another display substrate provided by at least one embodiment of the present disclosure;

[0045] FIG. 12 is a schematic diagram of a cross-sectional structure of still another display substrate provided by at least one embodiment of the present disclosure;

[0046] FIGS. 13A-13J are process diagrams of a method for manufacturing a display substrate provided by at least one embodiment of the present disclosure;

[0047] FIGS. 14A-14K are process diagrams of another method for manufacturing a display substrate provided by at least one embodiment of the present disclosure;

[0048] FIG. 15 is a schematic diagram of a planar structure of a packaging structure provided by at least one embodiment of the present disclosure;

[0049] FIG. 16 is a schematic diagram of a cross-sectional structure of a packaging structure provided by at least one embodiment of the present disclosure;

[0050] FIG. 17 is a schematic diagram of a cross-sectional structure of another packaging structure provided by at least one embodiment of the present disclosure; and

[0051] FIG. 18 is a block diagram of a display device according to an embodiment of the present disclosure. DETAILED DESCRIPTION

[0052] In order to make the objects, technical solutions and advantages of the embodiments of the present disclosure clearer, the technical solutions of the embodiments of the present disclosure will be described clearly and completely below with reference to the drawings of the embodiments of the present disclosure. Obviously, the described embodiments are some but not all of the embodiments of the present disclosure. Based on the described embodiments of the present disclosure, all other embodiments obtained by those of ordinary skill in the art without creative effort fall within the scope of the present disclosure.

[0053] Unless otherwise defined, technical terms or scientific terms used in the present disclosure shall have the ordinary meanings as understood by those of ordinary skill in the art to which the present disclosure belongs. The terms "first", "second", and similar terms used in the present disclosure do not denote any order, quantity, or importance, but are used to distinguish different components. The terms "include", "contain", and similar terms mean that the elements or objects before the terms encompass the elements or objects listed after the terms and their equivalents, and do not exclude other elements or objects. The terms "connect" and "connected" and similar terms are not limited to physical or mechanical connections, but can include electrical connections, whether direct or indirect. The terms "upper", "lower", "left", "right", and the like are used only to indicate relative positional relationships, and when the absolute positions of the described objects are changed, the relative positional relationships can also be changed accordingly.

[0054] Unless otherwise defined, the features "parallel", "perpendicular", and "same" and the like used in the embodiments of the present disclosure include the cases of "strictly parallel", "strictly perpendicular", and "strictly same" and the cases of "approximately parallel", "approximately perpendicular", and "approximately same" containing certain errors. For example, the "approximately" described above can mean that the difference between the compared objects is within 10% or 5% of the average value of the compared objects. In the following description of the embodiments of the present disclosure, when the number of a component or element is not specifically indicated, it means that the component or element can be one or multiple, or can be understood as at least one. "At least one" means one or more, and "multiple" means at least two. In the embodiments of the present disclosure, "disposed in the same layer" refers to the relationship between multiple film layers formed by the same material after the same step (for example, one patterning process). Here, "in the same layer" does not always mean that the thicknesses of the multiple film layers are the same or the heights of the multiple film layers in a cross-sectional view are the same.

[0055] For the top-emitting light-emitting diode display device, the anode is formed by using the ITO / Ag / ITO three-layer laminated structure, and the silver metal layer is sandwiched between the two layers of indium tin oxide as a reflective layer. The silver metal layer has a high reflectivity to light, and the reflectivity of any color light is more than 90%, but it still causes some waste of light. The inventors of the present disclosure noticed that a reflective structure can be arranged on the side of the anode close to the substrate substrate, and the structure combined with the reflective structure can further improve the reflectivity of light compared to the traditional ITO / Ag / ITO three-layer laminated structure, thereby effectively improving the light-emitting efficiency of the light-emitting diode display device. At the same time, in order to apply the light-emitting diode display device with the reflective structure to the display substrate, the structure of the corresponding display substrate and the process of forming the display substrate are redesigned to form a complete scheme for preparing the display substrate.

[0056] For example, FIG. 1 is a schematic view of a cross-sectional structure of a display substrate. As shown in FIG. 1, the display substrate includes a substrate substrate 101, a first electrode 102, a hole injection layer 102, a hole transport layer 103, a light-emitting layer 104, a hole blocking layer 105, an electron transport layer 106, an electron injection layer 107, a second electrode 108, a light extraction layer 109, and an encapsulation layer 110 arranged in sequence on the substrate substrate 101. For a top-emitting OLED display device, an ITO / Ag / ITO three-layer laminated structure is usually used as an anode. In the ITO / Ag / ITO three-layer laminated structure, the ITO layer farther away from the substrate substrate 101 is used as a hole electrode to directly contact the hole injection material, and the Ag metal layer is used as a reflective layer to produce a microcavity effect for the light-emitting diode display device to increase the light extraction efficiency and reduce the overall resistance of the anode. However, the reflectivity of the silver metal layer to light with a smaller wavelength, such as light with a wavelength of 400-550 nm, is less than 90%, so 10% of the light with a smaller wavelength cannot be effectively extracted. For example, the light extraction layer 109 can be used to improve the light extraction effect.

[0057] An organic light-emitting diode (OLED) display panel is the mainstream display screen of mobile phones and other electronic products. The light-emitting diode display device has defects such as insufficient brightness, and forcibly increasing the brightness of the display panel through other means will also shorten the service life of the light-emitting diode display device. The inventors of the present disclosure noticed that the display efficiency of the light-emitting diode display device can be improved by improving the anode of the light-emitting diode display device, and at the same time, in order to adapt to the needs of the improved anode, the structure of the driven display substrate can also be redesigned.

[0058] The display substrate provided by the embodiments of the present disclosure can not only meet the reflection condition of half-wave loss, but also move the light extraction node of the microcavity of the OLED display device from the second node to the first node, thereby reducing the thickness of the organic layer, reducing the evaporation cost, increasing the reflection efficiency of light by reducing the absorption of light, and improving the display efficiency of the OLED display device by more than 30%.

[0059] For example, the display substrate provided by the embodiments of the present disclosure can not only meet the reflection condition of half-wave loss, but also move the light extraction node of the microcavity of the OLED display device from the second node to the first node, thereby reducing the thickness of the organic layer, reducing the evaporation cost, increasing the reflection efficiency of light by reducing the absorption of light, and improving the display efficiency of the OLED display device by more than 30%.

[0060] For example, as shown in FIG. 2, the light emitting element 202 includes a first electrode 2021 disposed on the substrate 201, a hole injection layer 2022, a hole transport layer 2023, a light emitting layer 2024, a hole blocking layer 2025, an electron transport layer 2026, an electron injection layer 2027, a second electrode 2028 and a light extraction layer 2029 disposed on the first electrode 2021 in sequence. For example, an encapsulation structure 203 is disposed on the side of the light emitting element 202 away from the substrate 201.

[0061] For example, FIG. 3 is a schematic view of the cross-sectional structure of the reflection structure shown in FIG. 2. As shown in FIG. 3, the reflection structure 2021b includes a plurality of first units 301 stacked in sequence, and each first unit 301 includes a first reflection film 3011 and a second reflection film 3012 stacked in sequence, wherein the first refractive index of the first reflection film 3011 is greater than the second refractive index of the second reflection film 3012.

[0062] For example, in one example, the reflection structure 2021b is a stack structure of the first reflection film 3011 with high refractive index and the second reflection film 3012 with low refractive index. The thickness of each layer of the first reflection film 3011 and the second reflection film 3012, and the number of layers of all the first reflection film 3011 and the second reflection film 3012, are determined according to the optical setting target. When setting the thickness and the number of layers of each first reflection film 3011 and second reflection film 3012, the refractive index n and the extinction coefficient k of the selected material are considered.

[0063] For example, in one example, all of the first reflecting films 3011 have the same thickness, and all of the second reflecting films 3012 have the same thickness.

[0064] For example, for a reflecting film that reflects blue light alone, the difference between the refractive index of the first reflecting film 3011 having a high refractive index and the second reflecting film 3012 having a low refractive index is required to be not less than 0.4, the wavelength range of the corresponding light is 446 nm to 506 nm, the center wavelength is 476 nm, the spectral width is 60 nm, and the wave number is 0.104.

[0065] For example, for a reflecting film that reflects green light alone, the difference between the refractive index of the first reflecting film 3011 having a high refractive index and the second reflecting film 3012 having a low refractive index is required to be not less than 0.7, the wavelength range of the corresponding light is 500 nm to 630 nm, the center wavelength is 565 nm, the spectral width is 130 nm, and the wave number is 0.23.

[0066] For example, for a reflecting film that reflects red light alone, the difference between the refractive index of the first reflecting film 3011 having a high refractive index and the second reflecting film 3012 having a low refractive index is required to be not less than 0.5, the wavelength range of the corresponding light is 597 nm to 706 nm, the center wavelength is 651 nm, the spectral width is 109 nm, and the wave number is 0.17.

[0067] For example, for a reflecting film that reflects green light and blue light, the difference between the refractive index of the first reflecting film 3011 having a high refractive index and the second reflecting film 3012 having a low refractive index is required to be not less than 1, the wavelength range of the corresponding light is 446 nm to 630 nm, the center wavelength is 538 nm, the spectral width is 184 nm, and the wave number is 0.34.

[0068] For example, for a reflecting film that reflects red light, green light, and blue light, the difference between the refractive index of the first reflecting film 3011 having a high refractive index and the second reflecting film 3012 having a low refractive index is required to be not less than 1.4, the wavelength range of the corresponding light is 446 nm to 706 nm, the center wavelength is 576 nm, the spectral width is 260 nm, and the wave number is 0.45.

[0069] For example, for a first unit formed by the first reflecting film 3011 having a high refractive index and the second reflecting film 3012 having a low refractive index, and a reflecting structure formed by stacking a plurality of first units, when the reflecting structure is used for an anode of a light emitting diode display device, it is possible to achieve high reflectivity for red light, green light, and blue light, or high reflectivity for green light and blue light, or high reflectivity for blue light alone.

[0070] For example, when the refractive index of the first reflecting film 3011 is 2.67 and the refractive index of the second reflecting film 3012 is 1.17, the reflection efficiency of red light, green light and blue light is high, and the wave number is 0.51; when the refractive index of the first reflecting film 3011 is 2.67 and the refractive index of the second reflecting film 3012 is 1.27, the reflection efficiency of red light, green light and blue light is high, and the wave number is 0.46; when the refractive index of the first reflecting film 3011 is 2.57 and the refractive index of the second reflecting film 3012 is 1.17, the reflection efficiency of red light, green light and blue light is high, and the wave number is 0.49; when the refractive index of the first reflecting film 3011 is 2.47 and the refractive index of the second reflecting film 3012 is 1.17, the reflection efficiency of red light, green light and blue light is high, and the wave number is 0.46.

[0071] For example, when the refractive index of the first reflecting film 3011 is 2.67 and the refractive index of the second reflecting film 3012 is 1.37, the reflection efficiency of green light and blue light is high, and the wave number is 0.42; when the refractive index of the first reflecting film 3011 is 2.67 and the refractive index of the second reflecting film 3012 is 1.47, the reflection efficiency of green light and blue light is high, and the wave number is 0.37; when the refractive index of the first reflecting film 3011 is 2.57 and the refractive index of the second reflecting film 3012 is 1.27, the reflection efficiency of green light and blue light is high, and the wave number is 0.44; when the refractive index of the first reflecting film 3011 is 2.57 and the refractive index of the second reflecting film 3012 is 1.37, the reflection efficiency of green light and blue light is high, and the wave number is 0.39; when the refractive index of the first reflecting film 3011 is 2.57 and the refractive index of the second reflecting film 3012 is 1.47, the reflection efficiency of green light and blue light is high, and the wave number is 0.35; when the refractive index of the first reflecting film 3011 is 2.47 and the refractive index of the second reflecting film 3012 is 1.27, the reflection efficiency of green light and blue light is high, and the wave number is 0.42; when the refractive index of the first reflecting film 3011 is 2.47 and the refractive index of the second reflecting film 3012 is 1.37, the reflection efficiency of green light and blue light is high, and the wave number is 0.37; when the refractive index of the first reflecting film 3011 is 2.37 and the refractive index of the second reflecting film 3012 is 1.17, the reflection efficiency of green light and blue light is high, and the wave number is 0.44; when the refractive index of the first reflecting film 3011 is 2.37 and the refractive index of the second reflecting film 3012 is 1.27, the reflection efficiency of green light and blue light is high, and the wave number is 0.39; when the refractive index of the first reflecting film 3011 is 2.37 and the refractive index of the second reflecting film 3012 is 1.37, the reflection efficiency of green light and blue light is high, and the wave number is 0.34; when the refractive index of the first reflecting film 3011 is 2.27 and the refractive index of the second reflecting film 3012 is 1.17, the reflection efficiency of green light and blue light is high, and the wave number is 0.41; when the refractive index of the first reflecting film 3011 is 2.27 and the refractive index of the second reflecting film 3012 is 1.27, the reflection efficiency of green light and blue light is high, and the wave number is 0.36; when the refractive index of the first reflecting film 3011 is 2.17 and the refractive index of the second reflecting film 3012 is 1.17, the reflection efficiency of green light and blue light is high, and the wave number is 0.39; when the refractive index of the first reflecting film 3011 is 2.17 and the refractive index of the second reflecting film 3012 is 1.27, the reflection efficiency of green light and blue light is high, and the wave number is 0.34; when the refractive index of the first reflecting film 3011 is 2.07 and the refractive index of the second reflecting film 3012 is 1.17, the reflection efficiency of green light and blue light is high, and the wave number is 0.36.

[0072] For example, when the refractive index of the first reflecting film 3011 is 2.07 and the refractive index of the second reflecting film 3012 is 1.27, the reflectance of blue light is high, and the wave number is 0.31; when the refractive index of the first reflecting film 3011 is 2.07 and the refractive index of the second reflecting film 3012 is 1.37, the reflectance of blue light is high, and the wave number is 0.26; when the refractive index of the first reflecting film 3011 is 2.07 and the refractive index of the second reflecting film 3012 is 1.47, the reflectance of blue light is high, and the wave number is 0.22; when the refractive index of the first reflecting film 3011 is 2.07 and the refractive index of the second reflecting film 3012 is 1.57, the reflectance of blue light is high, and the wave number is 0.18; when the refractive index of the first reflecting film 3011 is 2.07 and the refractive index of the second reflecting film 3012 is 1.67, the reflectance of blue light is high, and the wave number is 0.14; when the refractive index of the first reflecting film 3011 is 2.17 and the refractive index of the second reflecting film 3012 is 1.37, the reflectance of blue light is high, and the wave number is 0.29; when the refractive index of the first reflecting film 3011 is 2.17 and the refractive index of the second reflecting film 3012 is 1.47, the reflectance of blue light is high, and the wave number is 0.25; when the refractive index of the first reflecting film 3011 is 2.17 and the refractive index of the second reflecting film 3012 is 1.57, the reflectance of blue light is high, and the wave number is 0.21; when the refractive index of the first reflecting film 3011 is 2.17 and the refractive index of the second reflecting film 3012 is 1.67, the reflectance of blue light is high, and the wave number is 0.17; when the refractive index of the first reflecting film 3011 is 2.17 and the refractive index of the second reflecting film 3012 is 1.67, the reflectance of blue light is high, and the wave number is 0.13; when the refractive index of the first reflecting film 3011 is 2.27 and the refractive index of the second reflecting film 3012 is 1.37, the reflectance of blue light is high, and the wave number is 0.32; when the refractive index of the first reflecting film 3011 is 2.27 and the refractive index of the second reflecting film 3012 is 1.47, the reflectance of blue light is high, and the wave number is 0.27; when the refractive index of the first reflecting film 3011 is 2.27 and the refractive index of the second reflecting film 3012 is 1.57, the reflectance of blue light is high, and the wave number is 0.23; when the refractive index of the first reflecting film 3011 is 2.27 and the refractive index of the second reflecting film 3012 is 1.67, the reflectance of blue light is high, and the wave number is 0.19; when the refractive index of the first reflecting film 3011 is 2.27 and the refractive index of the second reflecting film 3012 is 1.77, the reflectance of blue light is high, and the wave number is 0.16; when the refractive index of the first reflecting film 3011 is 2.37 and the refractive index of the second reflecting film 3012 is 1.47, the reflectance of blue light is high, and the wave number is 0.3; when the refractive index of the first reflecting film 3011 is 2.37 and the refractive index of the second reflecting film 3012 is 1.57When the refractive index of the first reflective film 3011 is 2.37 and the refractive index of the second reflective film 3012 is 1.67, the reflectivity of blue light is high, and the wave number is 0.22; when the refractive index of the first reflective film 3011 is 2.37 and the refractive index of the second reflective film 3012 is 1.77, the reflectivity of blue light is high, and the wave number is 0.19; when the refractive index of the first reflective film 3011 is 2.47 and the refractive index of the second reflective film 3012 is 1.47, the reflectivity of blue light is high, and the wave number is 0.33; when the refractive index of the first reflective film 3011 is 2.47 and the refractive index of the second reflective film 3012 is 1.57, the reflectivity of blue light is high, and the wave number is 0.29; when the refractive index of the first reflective film 3011 is 2.47 and the refractive index of the second reflective film 3012 is 1.67, the reflectivity of blue light is high, and the wave number is 0.25; when the refractive index of the first reflective film 3011 is 2.47 and the refractive index of the second reflective film 3012 is 1.77, the reflectivity of blue light is high, and the wave number is 0.21; when the refractive index of the first reflective film 3011 is 2.57 and the refractive index of the second reflective film 3012 is 1.57, the reflectivity of blue light is high, and the wave number is 0.31; when the refractive index of the first reflective film 3011 is 2.57 and the refractive index of the second reflective film 3012 is 1.67, the reflectivity of blue light is high, and the wave number is 0.27; when the refractive index of the first reflective film 3011 is 2.57 and the refractive index of the second reflective film 3012 is 1.77, the reflectivity of blue light is high, and the wave number is 0.24; when the refractive index of the first reflective film 3011 is 2.67 and the refractive index of the second reflective film 3012 is 1.57, the reflectivity of blue light is high, and the wave number is 0.33; when the refractive index of the first reflective film 3011 is 2.67 and the refractive index of the second reflective film 3012 is 1.67, the reflectivity of blue light is high, and the wave number is 0.30; when the refractive index of the first reflective film 3011 is 2.67 and the refractive index of the second reflective film 3012 is 1.77, the reflectivity of blue light is high, and the wave number is 0.26.

[0073] For example, in the embodiment of the present disclosure, the number of the first units 301 included in the reflective structure 2021b is greater than or equal to six. Although only six first units 301 are shown in FIG. 3, the embodiment of the present disclosure is not limited thereto, and can also be more first units 301, for example, seven first units 301, eight first units 301, nine first units 301, or ten first units 301.

[0074] For example, in a process of gradually increasing the number of the first units 301 from 4 to 8, the reflectivity of the reflective structure to the light gradually increases from 93% to 100%, and when the number of the first units 301 is 8, 9 and 10, the reflectivity of the reflective structure to the light is 100%.

[0075] For example, as shown in FIG. 3, the materials of the first reflective film 3011 and the second reflective film 3012 can be inorganic materials, organic materials or a combination of inorganic materials and organic materials, as long as the first reflective film 3011 and the second reflective film 3012 are materials with different refractive indexes.

[0076] For example, in combination with FIG. 3, in one example, the material of the first reflective film 3011 includes at least one of Nb2O5, TA2O5, TiO2 and epoxy resin, and the material of the second reflective film 3012 includes SiO2, so that the first reflective film 3011 and the second reflective film 3012 can have different refractive indexes.

[0077] For example, in combination with FIG. 2, the light-emitting element 202 is a blue light-emitting element, and the difference between the first refractive index of the first reflective film 3011 and the second refractive index of the second reflective film 3012 is greater than or equal to 0.4, that is, for the blue light-emitting element, when the difference between the first refractive index of the first reflective film 3011 and the second refractive index of the second reflective film 3012 is greater than or equal to 0.4, it can be ensured that the reflection effect of the finally formed reflective structure 2021b to the blue light is good enough.

[0078] For example, when the reflective structure 2021b is set, the thicknesses of the first reflective film 3011 and the second reflective film 3012 also need to be considered. For example, in one example, the material of the first reflective film 3011 is Nb2O5, the material of the second reflective film 3012 is SiO2, and the thickness of the first reflective film 3011 is 50 nm, and the thickness of the second reflective film 3012 is 83 nm.

[0079] For example, in one example, the material of the first reflective film 3011 is epoxy resin, and the material of the second reflective film 3012 is acrylic resin.

[0080] For example, in one example, the first reflective film 3011 and the second reflective film 3012 are stacked to form the first unit 301, and a plurality of first units 301 are stacked to form the reflective structure 2021b, that is, in an equal-interval repeating manner. The material of the first reflective film 3011 is Nb2O5, and the thickness thereof is 50 nm; the material of the second reflective film 3012 is SiO2, and the thickness thereof is 83 nm, so as to realize total reflection of light with a wavelength of 450 nm to 600 nm. This kind of structure design can realize better gain, and the reflectivity of light with a wavelength of 440 nm to 520 nm can be greater than 99%.

[0081] For example, in one example, in each first unit, the material of the first reflective film 3011 is Nb2O5, and the thickness is 50.8 nm; the material of the second reflective film 3012 is SiO2, and the thickness is 83.01 nm.

[0082] For example, in another example, the first reflective film 3011 and the second reflective film 3012 are stacked to form a first unit 301. In each first unit 301, the thickness of the first reflective film 3011 is different; in each first unit 301, the thickness of the second reflective film 3012 is different, so that the plurality of first units 301 are stacked to form the reflective structure 2021b, but in a non-equidistant repeating manner. The reflective structure 2021b can achieve total reflection of blue light.

[0083] For example, in one example, from the position close to the substrate to the position away from the substrate, in the first first unit, the material of the first reflective film 3011 is Nb2O5, and the thickness is 35 nm; the material of the second reflective film 3012 is SiO2, and the thickness is 50 nm. In the second first unit, the material of the first reflective film 3011 is Nb2O5, and the thickness is 48 nm; the material of the second reflective film 3012 is SiO2, and the thickness is 70 nm. In the third first unit, the material of the first reflective film 3011 is Nb2O5, and the thickness is 45 nm; the material of the second reflective film 3012 is SiO2, and the thickness is 70 nm. In the fourth first unit, the material of the first reflective film 3011 is Nb2O5, and the thickness is 48 nm; the material of the second reflective film 3012 is SiO2, and the thickness is 75 nm. In the fifth first unit, the material of the first reflective film 3011 is Nb2O5, and the thickness is 42 nm; the material of the second reflective film 3012 is SiO2, and the thickness is 65 nm. In the sixth first unit, the material of the first reflective film 3011 is Nb2O5, and the thickness is 48 nm; the material of the second reflective film 3012 is SiO2, and the thickness is 80 nm. In the seventh first unit, the material of the first reflective film 3011 is Nb2O5, and the thickness is 48 nm; the material of the second reflective film 3012 is SiO2, and the thickness is 40 nm. In the eighth first unit, the material of the first reflective film 3011 is Nb2O5, and the thickness is 40 nm; the material of the second reflective film 3012 is SiO2, and the thickness is 80 nm. It should be noted that although the above-mentioned layer structures give specific numerical values of the thickness, in the actual structure, the thickness of the above-mentioned layer structures can be positively and negatively fluctuated by 50%, so as to adjust the thickness of the above-mentioned layer structures to obtain better light output effect.

[0084] For example, in one example, the reflective structure 2021b can be formed by combining organic materials and inorganic materials, so that the reflective structure 2021b helps to achieve a longer band pass. For example, the material of the first reflective film 3011 is Nb2O5, and the refractive index is 2.47; the material of the second reflective film 3012 is acrylic resin, and the refractive index is 1.2, so that a band pass of 150nm-200nm can be achieved to achieve strong reflection ability for red light, green light and blue light.

[0085] For example, in one example, the light emitting element 202 is a green light emitting element, and the difference between the first refractive index of the first reflective film 3011 and the second refractive index of the second reflective film 3012 is greater than or equal to 0.7, that is, for the green light emitting element, when the difference between the first refractive index of the first reflective film 3011 and the second refractive index of the second reflective film 3012 is greater than or equal to 0.7, it can be ensured that the reflection effect of the finally formed reflective structure 2021b on green light is good enough.

[0086] For example, in one example, the light emitting element 202 is a red light emitting element, and the difference between the first refractive index of the first reflective film 3011 and the second refractive index of the second reflective film 3012 is greater than or equal to 0.5, that is, for the red light emitting element, when the difference between the first refractive index of the first reflective film 3011 and the second refractive index of the second reflective film 3012 is greater than or equal to 0.5, it can be ensured that the reflection effect of the finally formed reflective structure 2021b on red light is good enough.

[0087] For example, for light emitting elements emitting monochromatic light, different first units 301 with different refractive index differences can be set for light emitting elements of different colors, and then corresponding reflective structures 2021b are formed according to the first units 301.

[0088] For example, in one example, the light emitting element 202 is a blue light emitting element and a green light emitting element, the same first unit 301 is set for the blue light emitting element and the green light emitting element, and the difference between the first refractive index of the first reflective film 3011 and the second refractive index of the second reflective film 3012 in the first unit 301 is greater than or equal to 1, so that the reflection effect of the finally formed reflective structure 2021b on blue light and green light is good enough.

[0089] For example, in one example, for the blue light emitting element, the thickness of the first electrode 2021 (for example, an indium tin oxide layer) is 8 nm, the thickness of the hole injection layer is 10 nm, the thickness of the hole transport layer can be adjusted between 70 nm and 120 nm, the thickness of the blue light emitting layer is 25 nm, the thickness of the hole blocking layer is 5 nm, the thickness of the electron transport layer is 20 nm, the thickness of the electron injection layer is 10 nm, the thickness of the second electrode is 12 nm, the thickness of the light trapping layer is 80 nm, the thickness of the light adjusting layer is 60 nm, the thickness of the first inorganic encapsulating layer is 1000 nm, the thickness of the organic encapsulating layer is 10000 nm, the thickness of the second inorganic encapsulating layer is 600 nm, and the thickness of the blue filter layer is 2.5 microns. For the green light emitting element, the thickness of the first electrode 2021 (for example, an indium tin oxide layer) is 10 nm, the thickness of the hole injection layer is 10 nm, the thickness of the hole transport layer can be adjusted between 70 nm and 120 nm, the thickness of the green light emitting layer is 65 nm, the thickness of the hole blocking layer is 5 nm, the thickness of the electron transport layer is 20 nm, the thickness of the electron injection layer is 10 nm, the thickness of the second electrode is 12 nm, the thickness of the light trapping layer is 80 nm, the thickness of the light adjusting layer is 60 nm, the thickness of the first inorganic encapsulating layer is 1000 nm, the thickness of the organic encapsulating layer is 10000 nm, the thickness of the second inorganic encapsulating layer is 600 nm, and the thickness of the green filter layer is 2.5 microns. It should be noted that although the above-mentioned various layer structures give specific numerical values of the thickness, in the actual structure, the thickness of the above-mentioned various layer structures can be positively or negatively fluctuated by 50% to adjust the thickness of the above-mentioned various layer structures and obtain better light output effect.

[0090] For example, in one example, the light emitting element 202 is a blue light emitting element, a green light emitting element and a red light emitting element, the same first unit 301 is provided for the blue light emitting element, the green light emitting element and the red light emitting element, and the difference between the first refractive index of the first reflective film 3011 and the second refractive index of the second reflective film 3012 is greater than or equal to 1.4, so that the reflection effect of the finally formed reflective structure 2021b on blue light and green light is good enough.

[0091] For example, in another example, for a red light emitting element, the thickness of the hole injection layer is 10 nm, the thickness of the hole transport layer is 98 nm, the thickness of the red light emitting layer is 114 nm, the thickness of the hole blocking layer is 5 nm, the thickness of the electron transport layer is 20 nm, the thickness of the electron injection layer is 10 nm, the thickness of the second electrode is 12 nm, the thickness of the light trapping layer is 80 nm, the thickness of the light adjusting layer is 60 nm, the thickness of the first inorganic encapsulating layer is 1000 nm, the thickness of the organic encapsulating layer is 10000 nm, and the thickness of the second inorganic encapsulating layer is 600 nm. For a green light emitting element, the thickness of the hole injection layer is 10 nm, the thickness of the hole transport layer is 98 nm, the thickness of the green light emitting layer is 65 nm, the thickness of the hole blocking layer is 5 nm, the thickness of the electron transport layer is 20 nm, the thickness of the electron injection layer is 10 nm, the thickness of the second electrode is 12 nm, the thickness of the light trapping layer is 80 nm, the thickness of the light adjusting layer is 60 nm, the thickness of the first inorganic encapsulating layer is 1000 nm, the thickness of the organic encapsulating layer is 10000 nm, and the thickness of the second inorganic encapsulating layer is 600 nm. For a blue light emitting element, the thickness of the hole injection layer is 10 nm, the thickness of the hole transport layer is 98 nm, the thickness of the blue light emitting layer is 25 nm, the thickness of the hole blocking layer is 5 nm, the thickness of the electron transport layer is 20 nm, the thickness of the electron injection layer is 10 nm, the thickness of the second electrode is 12 nm, the thickness of the light trapping layer is 80 nm, the thickness of the light adjusting layer is 60 nm, the thickness of the first inorganic encapsulating layer is 1000 nm, the thickness of the organic encapsulating layer is 10000 nm, and the thickness of the second inorganic encapsulating layer is 600 nm. This kind of structure design can realize a gain of about 36% for the blue light emitting device, narrow the wave peak of the green light emitting device, and maintain the existing level of the red light emitting device. The color gamut of the overall device is improved from 120% NTSC to 126% NTSC.

[0092] It should be noted that although the above-mentioned various layer structures give specific thickness values, in actual structures, the thickness of the above-mentioned various layer structures can be positively or negatively fluctuated by 50% to adjust the thickness of the above-mentioned various layer structures to obtain better light output effect.

[0093] For example, in the embodiments of the present disclosure, in order to realize the resistance matching of the reflective structure and the anode, the thickness of the third indium tin oxide layer included in the anode needs to be set to 50 angstroms to 400 angstroms, so that the thicknesses of the hole transport layer and the reflective structure need to be adjusted accordingly to maintain the cavity length of the whole light-emitting diode display device unchanged. For example, by adjusting the thicknesses of the anode, the hole transport layer and the reflective structure, the light-emitting efficiency of the blue light-emitting diode display device can be improved by 60%, the light-emitting efficiency of the green light-emitting diode display device can be improved by 15%, and the color gamut can be improved to 124% NTSC. The layer structure farthest from the substrate of the reflective structure can be formed by using a material with a high refractive index, and the refractive index of the layer structure farthest from the substrate can reach 2.2 or more. For example, in one example, the thickness of the layer structure farthest from the substrate of the reflective structure can be 50.8 nm, 42 nm or 34 nm. For example, the reflective structure has the effect of narrowing the wave peak, and in order to obtain better visual color deviation, the number of first units formed by the first reflective film with a high refractive index and the second reflective film with a low refractive index in the reflective structure is required to be no less than 8. For example, in one example, the number of first units formed by the first reflective film with a high refractive index and the second reflective film with a low refractive index is 9, so that the reflective effect of the reflective structure on the light of the corresponding color can be optimized.

[0094] For example, as shown in FIG. 2, the thickness of the conductive metal oxide layer 2021a is 50 angstroms to 400 angstroms.

[0095] For example, in combination with FIGS. 2 and 3, the refractive index of the layer of the reflective structure 2021b in contact with the conductive metal oxide layer 2021a is greater than or equal to 2.2, and the thickness of the layer of the reflective structure 2021b in contact with the conductive metal oxide layer 2021a is at least one of 50.8 nm, 42 nm and 34 nm, which can make the reflective structure 2021b more effectively reflect light.

[0096] For example, FIG. 4 is a schematic diagram of a cross-sectional structure of a packaging structure provided by at least one embodiment of the present disclosure, as shown in FIG. 4, the packaging structure 203 includes a first inorganic packaging layer 2031, an organic packaging layer 2032 and a second inorganic packaging layer 2033, and the packaging structure 203 can prevent water and oxygen from the outside into the light-emitting diode device to affect the performance of the light-emitting layer.

[0097] For example, FIG. 5 is a schematic view of a cross-sectional structure of a display substrate according to another embodiment of the present disclosure. As shown in FIG. 5, the display substrate 200 includes a substrate 201, and a light emitting element 202 disposed on the substrate 201. The light emitting element 202 includes a first electrode 2021, and the first electrode 2021 includes a conductive metal oxide layer 2021a. A reflective structure 2021b is disposed between the conductive metal oxide layer 2021a and the substrate 201, and the reflective structure 2021b is disposed on a side of the conductive metal oxide layer 2021a close to the substrate 201. A silver metal layer 2021c is disposed on a side of the reflective structure 2021b close to the substrate 201. According to the embodiment of the present disclosure, the reflective structure 2021b is disposed between the conductive metal oxide layer 2021a and the silver metal layer 2021c, so that the light emitting diode display device has a higher light extraction efficiency.

[0098] For example, in the structure shown in FIG. 5, the silver metal layer 2021c and the reflective structure 2021b are combined to form an anode. The thickness of the reflective film with a high refractive index farthest from the substrate of the reflective structure of the display substrate shown in FIG. 5 is adjusted to obtain an optimized structure. The number of the reflective film with a high refractive index and the reflective film with a low refractive index included in the reflective structure is adjusted according to the optimized structure, to obtain a first luminance distribution curve A. The structure based on the combination of the reflective structure, the indium tin oxide layer and the silver metal layer before optimization is adjusted, and the number of the reflective film with a high refractive index and the reflective film with a low refractive index included in the reflective structure is adjusted, to obtain a second luminance distribution curve B. The number of the reflective film with a high refractive index and the reflective film with a low refractive index included in the reflective structure is adjusted according to the structure based on the combination of only the reflective structure and the indium tin oxide layer, to obtain a third luminance distribution curve C.

[0099] The first luminance distribution curve A, the second luminance distribution curve B and the third luminance distribution curve C are combined to obtain the distribution diagram shown in Fig. 6. As can be seen from Fig. 6, the anode maintains a relatively high luminance gain when the number of pairs of reflective films included in the reflective structure is small. In Fig. 6, for light having a central wavelength of 480 nm, for the third luminance distribution curve C, when the number of pairs of reflective films in the reflective structure is increased from 7 pairs to 13 pairs, the relative luminance of the light-emitting diode display device gradually increases from 0.47 to 0.54, and when the number of pairs of reflective films in the reflective structure is increased from 13 pairs to 15 pairs, the relative luminance remains 0.54. For the second luminance distribution curve B, when the number of pairs of reflective films in the reflective structure is increased from 7 pairs to 9 pairs, the relative luminance of the light-emitting diode display device increases from 0.52 to 0.535, and when the number of pairs of reflective films in the reflective structure is increased from 9 pairs to 15 pairs, the relative luminance of the light-emitting diode display device increases from 0.535 to 0.54 and then remains 0.54. For the first luminance distribution curve A, when the thickness of the reflective film having a high refractive index farthest from the display substrate of the reflective structure is adjusted from 50.8 nm to 60 nm, when the number of pairs of reflective films in the reflective structure is increased from 7 pairs to 15 pairs, the relative luminance of the light-emitting diode display device remains substantially unchanged at 0.54.

[0100] For example, the luminance relationship of the reflection viewing angle and the central wavelength of the reflected light corresponding to the reflection structure with different logarithms of the reflection films is as follows: when the logarithm of the reflection films in the reflection structure is 7 pairs, the reflection angle of the light with the wavelength of 460nm-480nm and the light with the wavelength of 485nm-500nm is 0-5 degrees, and the reflection angle of the light with the wavelength of 480nm-485nm is 5-15 degrees. When the logarithm of the reflection films in the reflection structure is 8 pairs, the reflection angle of the light with the wavelength of 460nm-465nm is 5-15 degrees, the reflection angle of the light with the wavelength of 465nm-480nm is 15-25 degrees, the reflection angle of the light with the wavelength of 480nm-495nm is 25-40 degrees, and the reflection angle of the light with the wavelength of 495nm-500nm is 0-5 degrees. When the logarithm of the reflection films in the reflection structure is 9 pairs, the reflection angle of the light with the wavelength of 460nm-470nm is 15-25 degrees, the reflection angle of the light with the wavelength of 470nm-490nm is 25-40 degrees, and the reflection angle of the light with the wavelength of 490nm-500nm is 40-50 degrees. When the logarithm of the reflection films in the reflection structure is 10 pairs and 11 pairs, the reflection angle of the light with the wavelength of 460nm-465nm is 15-25 degrees, the reflection angle of the light with the wavelength of 465nm-485nm is 25-40 degrees, and the reflection angle of the light with the wavelength of 485nm-500nm is 40-50 degrees. When the logarithm of the reflection films in the reflection structure is 12 pairs, the reflection angle of the light with the wavelength of 460nm-465nm is 15-25 degrees, the reflection angle of the light with the wavelength of 465nm-480nm is 25-40 degrees, and the reflection angle of the light with the wavelength of 480nm-500nm is 40-50 degrees. When the logarithm of the reflection films in the reflection structure is 13 pairs and 14 pairs, the reflection angle of the light with the wavelength of 460nm-480nm is 25-40 degrees, and the reflection angle of the light with the wavelength of 480nm-500nm is 40-50 degrees.

[0101] For example, FIG. 7 is a schematic diagram of a cross-sectional structure of a display substrate provided by at least one embodiment of the present disclosure. As shown in FIG. 7, the display substrate 200 further includes a driving transistor 204 disposed between the light emitting element 202 and the substrate 201, and a planarization layer 205 disposed between the driving transistor 204 and the light emitting element 202, the driving transistor 204 is configured to drive the light emitting element 202 to emit light, and the first electrode 2021 is electrically connected through a via structure 2051 disposed in the planarization layer 205 and a first source / drain electrode 2041 of the driving transistor 204.

[0102] For example, as shown in FIG. 7, the light emitting element 202 includes a first electrode 2021, a light emitting functional layer 2022, and a second electrode (not shown), the first electrode 2021 includes a reflective structure 2021b and a conductive metal oxide layer 2021a disposed on a side of the reflective structure 2021b away from the substrate 201.

[0103] For example, as shown in FIG. 7, the drive transistor 204 includes a semiconductor layer 2042, a gate insulating layer 2044, a gate electrode 2043, a first source-drain electrode 2041, and a second source-drain electrode 2042, and an interlayer insulating layer 208 is further disposed between the gate electrode 2043 and the first source-drain electrode 2041 and the second source-drain electrode 2042.

[0104] For example, a buffer layer 206 is further disposed between the substrate 201 and the drive transistor 204, and the material of the buffer layer 206 is an inorganic insulating material.

[0105] For example, the display substrate 200 further includes a pixel definition layer 207 configured to separate adjacent light emitting functional layers 2022.

[0106] For example, as shown in FIG. 7, the reflective structure 2021b covers the side surface of the planarization layer 205 and the surface away from the substrate 201.

[0107] For example, in one example, the thickness of the planarization layer 205 is 0.8 microns to 2 microns.

[0108] For example, in another example, the thickness of the planarization layer 205 is 1 micron to 2 microns.

[0109] For example, in one example, the display substrate 200 includes a plurality of light emitting elements emitting light of different colors, the light emitting element 202 includes a red light emitting element, a green light emitting element, and a blue light emitting element, and since there is a difference in reflectivity of the indium tin oxide layer and the silver metal layer for light of different colors, the structures of the first electrodes corresponding to the red light emitting element, the green light emitting element, and the blue light emitting element can be different.

[0110] For example, in one example, the first electrode of the red light emitting element is set as a laminated structure of a first indium tin oxide layer, a silver metal layer, and a second indium tin oxide layer, and the first electrodes of the green light emitting element and the blue light emitting element are both set as a laminated structure of a third indium tin oxide layer and a reflective structure.

[0111] For example, in one example, the thickness of the first indium tin oxide layer is 200 angstroms to 500 angstroms, and the thickness of the third indium tin oxide layer is 50 angstroms to 400 angstroms; or, the thickness of the first indium tin oxide layer is 30 angstroms to 120 angstroms, and the thickness of the third indium tin oxide layer is 50 angstroms to 400 angstroms.

[0112] For example, FIG. 8 is a schematic diagram of a planar structure of the reflective structure in FIG. 7 at the via structure, and FIG. 9 is a schematic diagram of an enlarged sectional structure of the reflective structure in FIG. 7 at the via structure. In combination with FIG. 8 and FIG. 9, the reflective structure 2021b has a stepped portion 2052 at the position of the via structure 2051, and the planar shape of the stepped portion 2052 includes at least one of a circular ring and a polygonal ring, so that the reflective structure 2021b has two platforms at the position of the via structure 2051.

[0113] For example, as shown in FIG. 8, the planar shape of the stepped portion 2052 is a circular ring, the circular ring includes a first circle 2052a located at the outer side, the planar shape of the via structure 2051 is a second circle, and the ratio of the diameter of the first circle 2052a to the diameter of the second circle is greater than or equal to 0.5 and less than 1, and the size of the ratio is related to the thickness of the reflective structure 2021b.

[0114] For example, the reflective structure 2021b has two platforms at the position of the via structure 2051, so that the slope of the reflective structure 2021b at the position of the via structure 2051 is relatively gentle, to prevent the reflective structure 2021b from being too large in height difference and causing the first electrode 2021 to break, so that the effective lap joint of the first electrode 2021 and the first source / drain electrode 2041 can be ensured.

[0115] For example, the shape of the opening corresponding to the platform close to one side of the substrate 201 can be a circle, a polygon, etc., the shape of the opening corresponding to the platform away from one side of the substrate 201 is consistent with the shape of the via structure, and the size of the opening corresponding to the platform away from one side of the substrate 201 is slightly smaller than the size of the via structure, so that the area of the first source / drain electrode 2041 exposed by the via structure 2051 connected by the first electrode 2021 and the first source / drain electrode 2041 is relatively large, to further ensure the stability of the electrical connection of the first electrode 2021 and the first source / drain electrode 2041.

[0116] For example, although the planar shape of the stepped portion in the planar structure shown in FIG. 8 is a circular ring, embodiments of the present disclosure are not limited thereto, and the above technical effects can also be achieved when the planar shape of the stepped portion in the planar structure is a polygonal ring.

[0117] For example, in one example, the slope angle of the stepped portion is greater than 0° and less than or equal to 60°. For example, the slope angle of the stepped portion is 20°, 30°, 40°, 50°, or 60°.

[0118] For example, as shown in FIG. 9, the reflective structure 2021b is a structure provided on the whole surface, and only has an opening at a position corresponding to the via structure 2051. Compared with the reflective structure in the form of an island structure, the process is simpler, and the continuity of the reflective structure can be ensured.

[0119] For example, as shown in FIG. 7, in one example, the light emitting element 202 includes a red light emitting element, a green light emitting element and a blue light emitting element. The first electrode 2021 of the red light emitting element includes a laminated structure of a first indium tin oxide layer, a silver metal layer and a second indium tin oxide layer. The first electrode of at least one of the green light emitting element and the blue light emitting element includes a third indium tin oxide layer, and the third indium tin oxide layer has the reflective structure 2021b between the third indium tin oxide layer and the substrate 201.

[0120] For example, in another example, the first electrode 2021 of the green light emitting element includes a laminated structure of a first indium tin oxide layer, a silver metal layer and a second indium tin oxide layer. The first electrode 2021 of the blue light emitting element includes a third indium tin oxide layer, and the third indium tin oxide layer has the reflective structure 2021b between the third indium tin oxide layer and the substrate 201.

[0121] For example, in another example, the first electrode of the green light emitting element and the first electrode of the blue light emitting element each include a third indium tin oxide layer, and the third indium tin oxide layer has the reflective structure 2021b between the third indium tin oxide layer and the substrate 201.

[0122] For example, in another example, the first electrode 2021 of the red light emitting element, the first electrode 2021 of the green light emitting element and the first electrode 2021 of the blue light emitting element are each electrically connected to the corresponding driving transistor.

[0123] For example, FIG. 10 is a schematic diagram of a cross-sectional structure of a display substrate provided by at least one embodiment of the present disclosure. As shown in FIG. 10, the display substrate 200 includes a substrate 201 and a light emitting element 202 provided on one side of the substrate 201. The display substrate 200 further includes a driving transistor 204 provided between the light emitting element 202 and the substrate 201, and a reflective structure 2021 between the light emitting element 202 and the substrate 201. The reflective structure 2021 is provided on the whole surface and has a plurality of openings arranged in an array. The light emitting element 202 is connected to the driving transistor 204 through the openings.

[0124] For example, as shown in FIG. 10, the display substrate 200 further includes a planarization layer 205 provided between the driving transistor 204 and the light emitting element 202. The driving transistor 204 is configured to drive the light emitting element 202 to emit light, and the first electrode 2021 is electrically connected to a first source / drain electrode 2041 of the driving transistor 204 through a via structure 2051 provided in the planarization layer 205.

[0125] For example, the display substrate 200 further comprises a pixel defining layer 207 configured to separate the adjacent light emitting functional layers 2022. For example, in the structure shown in FIG. 10, the left light emitting functional layer 2022 is a red light emitting functional layer 2022R, and the right light emitting functional layer 2022 is a green light emitting functional layer 2022G. Although the right side in FIG. 10 shows a green light emitting functional layer, the green light emitting functional layer can also be a blue light emitting functional layer.

[0126] For example, as shown in FIG. 10, the light emitting element 202 comprises a first electrode 2021, a light emitting functional layer 2022, and a second electrode (not shown). At positions corresponding to green light emitting elements or blue light emitting elements, the first electrode 2021 comprises a reflective structure 2021b and a conductive metal oxide layer disposed on the side of the reflective structure 2021b away from the substrate 201, which can be an indium tin oxide layer. At positions corresponding to red light emitting elements, the first electrode 2021 does not comprise a reflective structure 2021b, and the first electrode 2021 comprises a conductive metal oxide layer 2021a, a silver metal layer 2021c, and a conductive metal oxide layer 2021d disposed in layers, and the materials of the conductive metal oxide layer 2021a and the conductive metal oxide layer 2021d can both be indium tin oxide layers.

[0127] For example, as shown in FIG. 10, the drive transistor 204 comprises a semiconductor layer 2042, a gate insulating layer 2044, a gate 2043, a first source-drain electrode 2041, and a second source-drain electrode 2042, and an interlayer insulating layer 208 is further disposed between the gate 2043 and the first source-drain electrode 2041 and the second source-drain electrode 2042.

[0128] For example, a buffer layer 206 is further disposed between the substrate 201 and the drive transistor 204, and the material of the buffer layer 206 is an inorganic insulating material.

[0129] For example, as shown in FIG. 10, for green light emitting elements or blue light emitting elements, the reflective structure 2021b covers the side surface of the planarization layer 205 corresponding to the via structure 2051 and the surface away from the substrate 201.

[0130] For example, as shown in FIG. 10, in one example, the light emitting element 202 comprises a red light emitting element, a green light emitting element, and a blue light emitting element, the first electrode 2021 of the red light emitting element comprises a first indium tin oxide layer, a silver metal layer, and a second indium tin oxide layer in a stacked structure, and the first electrode of at least one of the green light emitting element and the blue light emitting element comprises a third indium tin oxide layer, and the third indium tin oxide layer has the reflective structure 2021b between the third indium tin oxide layer and the substrate 201.

[0131] It should be noted that although only the red light emitting element and the green light emitting element are shown in FIG. 10, in an actual structure, a blue light emitting element can be included, and the green light emitting element shown in FIG. 10 can be replaced by a blue light emitting element for description.

[0132] For example, in another example, the first electrode 2021 of the green light emitting element includes a laminated structure of a first indium tin oxide layer, a silver metal layer, and a second indium tin oxide layer, the first electrode 2021 of the blue light emitting element includes a third indium tin oxide layer, and the third indium tin oxide layer has a reflection structure 2021b with the substrate 201.

[0133] For example, in another example, the first electrode of the green light emitting element and the first electrode of the blue light emitting element each include a third indium tin oxide layer, and the third indium tin oxide layer has a reflection structure 2021b with the substrate 201.

[0134] For example, in another example, the first electrode 2021 of the red light emitting element, the first electrode 2021 of the green light emitting element, and the first electrode 2021 of the blue light emitting element are each electrically connected to the corresponding driving transistor.

[0135] For example, other layer structures of the display substrate shown in FIG. 10 can refer to the related description in the above and will not be described here.

[0136] For example, for a common top-emitting OLED display device structure, a reflection interface composed of Ag and MgAg and a filling medium composed of a light emitting organic layer together form a microcavity structure. The effective optical path of the organic layer is (10+20+…+10+8)*nd*2~704nm~1.5*462nm, that is, 1.5 times the center wavelength of light emission, where nd is the equivalent refractive index of the light emitting organic layer; 462nm is the center wavelength of the OLED display device; due to the reflection of the interface between the indium tin oxide layer and the silver metal layer, there is a loss of approximately half a wave, so the optical path of the microcavity is equivalent to 2 times the wavelength, that is, the microcavity strengthening node of the common top-emitting OLED display device is the second node.

[0137] The display substrate provided by the embodiments of the present disclosure moves the microcavity reinforcement node of the OLED display device to the first node, and the light efficiency of the light emission is obviously improved, but the thickness of the light-emitting organic layer needs to be greatly reduced to about 50 nm. If the thickness of the light-emitting functional film layer is too thin, it is difficult to form a film, and the light-emitting layer is close to the silver metal layer, which seriously affects the stability of the display substrate including the OLED display device. In order to maintain the gain of the microcavity first node, further improve the gain level, and ensure the stability of the display substrate, the display substrate provided by the embodiments of the present disclosure includes a reflective structure, the refractive index of the top layer material of the reflective structure is greater than the refractive index of the conductive metal oxide layer in the first electrode, so as to ensure that the light in the microcavity is from the optical sparse medium to the optical dense medium on the interface between the conductive metal oxide layer and the reflective structure. Therefore, the high-refractive material in the reflective structure is required to be in contact with the OLED display device, the transparent conductive metal oxide layer (for example, ITO) is in contact with the layer (Nb2O5) with high refractive index of the reflective structure, the refractive index of the ITO is less than the high-refractive material of the reflective structure, and the reinforcement node of the microcavity can be moved to the first node. The embodiments of the present disclosure also control the refractive index difference between the first reflective film and the second reflective film with low refractive index of the reflective structure, the number of layers of the first reflective film and the second reflective film, and the film thickness of the first reflective film and the second reflective film, so as to improve the reflectivity of the reflective structure, so as to strengthen the light emission energy of the microcavity, and finally realize the improvement of the light efficiency of the display substrate.

[0138] For example, by controlling the number of layers of the first reflective film and the second reflective film, and the film thickness of the first reflective film and the second reflective film, the reflectivity and bandwidth of the reflective structure can be changed. For example, when the reflective structure is applied to a blue light-emitting diode display device, the reflective structure also has a certain bandwidth, which is related to the thickness, number of layers and refractive index difference of the first reflective film and the second reflective film.

[0139] For example, in one example, the thickness of the first reflective film and the second reflective film of the reflective structure is d = λc / 4 / nd, wherein λc is the center wavelength of the reflective structure, nd is the refractive index of the first reflective film or the second reflective film at the center wavelength, the bandwidth Δλ = λ / (1-g)-λ / (1+g), g ~ 2 / π*arcsin((nh-nl) / nh+nl)), wherein Δn is the center wavelength, nh is the high-refractive index, nl is the low-refractive index, and λc is the center wavelength of the reflective structure; and the reflectivity is

[0140] For example, when the same reflective structure is applied to the green light emitting element and the blue light emitting element, the gain of the green light emitting element and the red light emitting element is realized while ensuring that the efficiency of the blue light emitting element is maximized, and the cost does not increase significantly. In order to ensure that the red light emitting element, the green light emitting element and the blue light emitting element can share the reflective structure, the refractive index difference of the first reflective film and the second reflective film needs to be adjusted. The greater the refractive index difference, the greater the high reflection zone bandwidth.

[0141] For example, in order to maximize the gain efficiency of the green light emitting element and the red light emitting element, the reflective layer of the green light emitting element and the red light emitting element can be replaced by a reflective structure respectively, but this will bring the problem of three reflective structures being prepared and patterned together, so the cost will increase to a certain extent.

[0142] For example, when the number of first units in the reflective structure is greater than or equal to 12 layers, the reflectivity of the reflective structure is basically close to 100%. The reflectivity of Ag in the medium is about 94%, so in order to realize gain, the number of first units in the reflective structure must be greater than or equal to 10. Considering the gain and cost, the number of first units in the reflective structure can be selected as 12, and then the design is made according to the enhancement wavelength. First, the center wavelength of the high reflection film layer is selected, and then the high reflection film and the low reflection film are alternately stacked. The thickness of each reflection film needs to satisfy the 1 / 4λ thickness of the center wavelength. The thickness of the reflective structure is T = 1 / 4λ / n1*m1 + 1 / 4λ / n2*m2, where n1 and n2 are the refractive index of the first reflection film layer with high refractive index and the refractive index of the second reflection film layer with low refractive index respectively. m1 and m2 are the number of layers of the first reflection film layer and the second reflection film layer respectively.

[0143] For example, FIG. 11 is a schematic diagram of a cross-sectional structure of a display substrate provided by at least one embodiment of the present disclosure. The display substrate shown in FIG. 11 is different from the display substrate shown in FIG. 10 in that the reflective structure 2021b has a stepped portion 2052 at the position of the via structure 2051. The planar shape of the stepped portion 2052 includes at least one of a circular ring shape and a polygonal ring shape, so that the reflective structure 2021b has two platforms at the position of the via structure 2051.

[0144] For example, as shown in FIG. 11, the planar shape of the stepped portion 2052 is a circular ring shape, which includes a first circular shape 2052a located on the outer side, and the planar shape of the via structure 2051 is a second circular shape. The ratio of the diameter of the first circular shape 2052a to the diameter of the second circular shape is greater than or equal to 0.5 and less than 1. The size of the ratio is related to the thickness of the reflective structure 2021b.

[0145] For example, the reflection structure 2021b has two platforms at the position of the via structure 2051, so that the slope of the reflection structure 2021b at the position of the via structure 2051 is gentle, so as to prevent the first electrode 2021 from being broken due to the too large difference in level of the reflection structure 2021b, thereby ensuring the effective lapping of the first electrode 2021 and the first source-drain electrode 2041.

[0146] For example, the shape of the opening corresponding to the platform close to the side of the substrate 201 can be circular, polygonal, etc., the shape of the opening corresponding to the platform away from the side of the substrate 201 is consistent with the shape of the via structure, and the size of the opening corresponding to the platform away from the side of the substrate 201 is slightly smaller than the size of the via structure, so that the area of the first source-drain electrode 2041 exposed by the via structure 2051 connecting the first electrode 2021 and the first source-drain electrode 2041 is larger, so as to further ensure the stability of the electrical connection of the first electrode 2021 and the first source-drain electrode 2041.

[0147] For example, although the planar shape of the stepped portion in the planar structure shown in FIG. 11 is a circular ring, embodiments of the present disclosure are not limited thereto, and the above technical effects can also be achieved when the planar shape of the stepped portion in the planar structure is a polygonal ring.

[0148] For example, FIG. 12 is a schematic diagram of a cross-sectional structure of a display substrate provided by at least one embodiment of the present disclosure, and the display substrate shown in FIG. 12 is different from the display substrate shown in FIG. 11 in that a silver metal layer 2021c is provided on the side of the reflection structure 2021b close to the substrate 201 at the position corresponding to the green light emitting element 2022G, and the silver metal layer 2021c can reduce the resistance of the first electrode 2021.

[0149] For example, FIGS. 13A-13J are process diagrams of a preparation method of a display substrate provided by at least one embodiment of the present disclosure, and the display substrate prepared by the preparation method shown in FIGS. 13A-13J can be the display substrate shown in FIG. 10.

[0150] For example, as shown in FIG. 13A, a buffer layer 206 is formed on the substrate 201, and a drive transistor 204 is formed on the buffer layer 206, the drive transistor 204 including a semiconductor layer 2042, a gate insulating layer 2044, a gate electrode 2043, a first source-drain electrode 2041, and a second source-drain electrode 2042, and an interlayer insulating layer 208 is further provided between the gate electrode 2043 and the first source-drain electrode 2041 and the second source-drain electrode 2042.

[0151] For example, as shown in FIG. 13B, a planarization layer 205 is formed on the side of the drive transistor 204 away from the substrate 201, and the planarization layer 205 includes a via structure 2051.

[0152] For example, as shown in FIG. 13C, a reflective structure film 2021b’ is formed on the planarization layer 205.

[0153] For example, as shown in FIG. 13D, a patterning process is performed on the reflective structure film 2021b’ to form a reflective structure 2021b corresponding to at least one of the green light emitting element and the blue light emitting element.

[0154] It should be noted that in the structure shown in FIG. 13D, the reflective structure formed at the position corresponding to at least one of the green light emitting element and the blue light emitting element needs to expose the upper surface of the first source-drain electrode 2041. In another example, only the reflective structure 2021b corresponding to the red light emitting element can be etched off, and the reflective structures 2021b at positions corresponding to light emitting elements of other colors are all retained. For example, the reflective structures 2021b at positions corresponding to the green light emitting element, the blue light emitting element, or the yellow light emitting element are retained.

[0155] For example, as shown in FIG. 13E, a conductive metal oxide film 2021a’ is formed on the reflective structure 2021b.

[0156] For example, as shown in FIG. 13F, a patterning process is performed on the conductive metal oxide film 2021a’ to form a conductive metal oxide layer 2021a corresponding to the red light emitting element and corresponding to at least one of the green light emitting element and the blue light emitting element.

[0157] It should be noted that although it is shown in FIG. 13F that the conductive metal oxide layer 2021a covers part of the upper surface of the reflective structure 2021b away from the substrate 201, embodiments of the present disclosure are not limited thereto, and the conductive metal oxide layer 2021a can cover both the upper surface and the side surface of the reflective structure 2021b away from the substrate 201.

[0158] For example, as shown in FIG. 13G, a silver metal layer film 2021c’ is formed on the conductive metal oxide layer 2021a.

[0159] For example, as shown in FIG. 13H, a patterning process is performed on the silver metal layer film 2021c’ to form a silver metal layer 2021c at a position corresponding to the red light emitting element.

[0160] For example, as shown in FIG. 13I, a conductive metal oxide film 2021d’ is formed on the silver metal layer 2021c.

[0161] For example, as shown in FIG. 13J, a patterning process is performed on the conductive metal oxide film 2021d’ to form a conductive metal oxide layer 2021d at a position corresponding to the red light emitting element.

[0162] Note that although in FIG. 13J, the conductive metal oxide layer 2021d is formed only at a position corresponding to the red light emitting element, embodiments of the present disclosure are not limited thereto, and the conductive metal oxide layer 2021d can also be formed at a position corresponding to at least one of the green light emitting element and the blue light emitting element.

[0163] For example, as shown in FIG. 13J, the drive transistor 204 is configured to drive the light emitting element 202 to emit light, and a first electrode 2021 included in the light emitting element 202 is electrically connected to the first source / drain electrode 2041 of the drive transistor 204 through a via structure 2051 provided in the planarization layer 205.

[0164] For example, in the cross-sectional structure shown in FIG. 13J, the left light emitting element 202 is a red light emitting element, and the right light emitting element 202 is a green light emitting element or a blue light emitting element. At a position corresponding to the green light emitting element or the blue light emitting element, the first electrode 2021 includes the reflective structure 2021b and a conductive metal oxide layer provided on a side of the reflective structure 2021b away from the substrate 201, and the conductive metal oxide layer can be an indium tin oxide layer. At a position corresponding to the red light emitting element, the first electrode 2021 does not include the reflective structure 2021b, and the first electrode 2021 includes the conductive metal oxide layer 2021a and the silver metal layer 2021c, which are stacked, and the material of the conductive metal oxide layer 2021a can be an indium tin oxide layer.

[0165] For example, FIGS. 14A-14K are process diagrams of another method of manufacturing a display substrate according to at least one embodiment of the present disclosure. For example, the display substrate manufactured by the manufacturing method shown in FIGS. 14A-14K can be the display substrate shown in FIG. 10.

[0166] For example, as shown in FIG. 14A, a buffer layer 206 is formed on the substrate 201, and a drive transistor 204 is formed on the buffer layer 206. The drive transistor 204 includes a semiconductor layer 2042, a gate insulating layer 2044, a gate electrode 2043, a first source / drain electrode 2041, and a second source / drain electrode 2042, and an interlayer insulating layer 208 is further provided between the gate electrode 2043 and the first source / drain electrode 2041 and the second source / drain electrode 2042.

[0167] For example, as shown in FIG. 14B, a planarization layer 205 is formed on a side of the drive transistor 204 away from the substrate 201, and the planarization layer 205 includes a via structure 2051.

[0168] For example, as shown in FIG. 14C, a reflective structure film 2021b' is formed on the planarization layer 205.

[0169] For example, as shown in FIG. 14D, a patterning process is performed on the reflective structure film 2021b' to form a reflective structure 2021b corresponding to at least one of the green light emitting element and the blue light emitting element.

[0170] It should be noted that in the structure shown in FIG. 14D, the reflective structure formed at the position corresponding to at least one of the green light emitting element and the blue light emitting element needs to expose the upper surface of the first source / drain electrode 2041. In another example, only the reflective structure 2021b corresponding to the red light emitting element can be etched off, and the reflective structures 2021b at positions corresponding to light emitting elements of other colors are all retained. For example, the reflective structures 2021b at positions corresponding to the green light emitting element, the blue light emitting element, or the yellow light emitting element are retained.

[0171] For example, as shown in FIG. 14E, a conductive metal oxide film 2021a' is formed on the reflective structure 2021b.

[0172] For example, as shown in FIG. 14F, a patterning process is performed on the conductive metal oxide film 2021a' to form a conductive metal oxide layer 2021a corresponding to the red light emitting element and corresponding to at least one of the green light emitting element and the blue light emitting element.

[0173] It should be noted that although it is shown in FIG. 14F that the conductive metal oxide layer 2021a covers part of the upper surface of the side of the reflective structure 2021b away from the substrate 201, embodiments of the present disclosure are not limited thereto, and the conductive metal oxide layer 2021a can cover both the upper surface and the side surface of the reflective structure 2021b away from the substrate.

[0174] For example, as shown in FIG. 14G, a sacrificial layer film layer 210' is formed on the conductive metal oxide layer 2021a.

[0175] For example, in the structure shown in FIG. 14G, the sacrificial layer film layer 210' can protect the conductive metal oxide layer 2021a located in the lower layer, and the subsequently mentioned silver metal layer 2021c and conductive metal oxide layer 2021d in the upper layer can be subsequently peeled off by peeling.

[0176] For example, as shown in FIG. 14H, a patterning process is performed on the sacrificial layer film layer 210' to form a sacrificial layer 210 at a position corresponding to at least one of the green light emitting element and the blue light emitting element.

[0177] For example, as shown in FIG. 14I, a silver metal layer film 2021c' is formed on the sacrificial layer 210.

[0178] For example, as shown in FIG. 14J, a conductive metal oxide film 2021d' is formed on the silver metal layer film 2021c'.

[0179] For example, as shown in FIG. 14K, the silver metal layer thin film 2021c’ and the conductive metal oxide thin film 2021d’ are subjected to a patterning process to form the silver metal layer 2021c and the conductive metal oxide layer 2021d at positions corresponding to the red light emitting element.

[0180] It should be noted that although in FIG. 14K, the conductive metal oxide layer 2021d is formed only at positions corresponding to the red light emitting element, embodiments of the present disclosure are not limited thereto, and the conductive metal oxide layer 2021d can also be formed at positions corresponding to at least one of the green light emitting element and the blue light emitting element.

[0181] For example, as shown in FIG. 14K, the driving transistor 204 is configured to drive the light emitting element 202 to emit light, and the first electrode 2021 included in the light emitting element 202 is electrically connected to the first source / drain electrode 2041 of the driving transistor 204 through the via structure 2051 provided in the planarization layer 205.

[0182] For example, in the cross-sectional structure shown in FIG. 14K, the left light emitting element 202 is a red light emitting element, and the right light emitting element 202 is a green light emitting element or a blue light emitting element. At positions corresponding to the green light emitting element or the blue light emitting element, the first electrode 2021 includes the reflective structure 2021b and the conductive metal oxide layer provided on the side of the reflective structure 2021b away from the substrate 201, and the conductive metal oxide layer can be an indium tin oxide layer. At positions corresponding to the red light emitting element, the first electrode 2021 does not include the reflective structure 2021b, and the first electrode 2021 includes the conductive metal oxide layer 2021a and the silver metal layer 2021c stacked thereon, and the material of the conductive metal oxide layer 2021a can be an indium tin oxide layer.

[0183] For example, FIG. 15 is a plan view of a packaging structure provided by at least one embodiment of the present disclosure. As shown in FIG. 15, the display substrate includes a display area 205 and a packaging structure 203 provided at the periphery of the display area 205. For example, the packaging structure 203 surrounds the display area 205 to protect the display area 205, so that water and oxygen and the like can be prevented from entering the display area 205.

[0184] For example, FIG. 16 is a schematic view of a cross-sectional structure of a packaging structure according to at least one embodiment of the present disclosure. As shown in FIG. 16, a reflective structure 2021b in a peripheral region can be used as a packaging structure. For example, the height of the reflective structure 2021b can be 0.5 microns to 2 microns, so that water and oxygen can be blocked. It should be noted that although only three reflective structures 2021b are shown in FIG. 16, embodiments of the present disclosure are not limited thereto, and more reflective structures 2021b can also be used as packaging structures.

[0185] For example, FIG. 17 is a schematic view of a cross-sectional structure of another packaging structure according to at least one embodiment of the present disclosure. As shown in FIG. 17, a dam structure 206 is formed in a peripheral region of a display substrate. The dam structure 206 is formed on the reflective structure 2021b, and can further block water and oxygen to prevent water and oxygen from entering the display region.

[0186] At least one embodiment of the present disclosure also provides a display device. For example, FIG. 18 is a block diagram of a display device according to at least one embodiment of the present disclosure. As shown in FIG. 18, the display device 300 includes the display substrate 200 described in any one of the above embodiments. The display device 300 can be a small and medium-sized electronic device such as a tablet computer, a smart phone, a head-mounted display, a car navigation unit, a camera, a center information display (CID) provided in a vehicle, a watch-type electronic device or other wearable device, a personal digital assistant (PDA), a portable multimedia player (PMP), and a game console, and a large-sized electronic device such as a television, an outdoor billboard, a monitor, a household appliance including a display screen, a personal computer, and a laptop computer, a transparent display device, and an organic optoelectronic sensor device having a display function. The electronic device described above can represent a simple example for applying the display device, and thus a person of ordinary skill in the art can recognize that the display substrate can also be applied to any other electronic device having a display function without departing from the spirit and scope of the present disclosure.

[0187] The display substrate and the display device provided by at least one embodiment of the present disclosure have at least the following beneficial technical effects: the reflective structure as the reflective layer of the first electrode improves the light extraction efficiency of the display substrate, and forms a display substrate that can be mass-produced.

[0188] The following points need to be explained:

[0189] (1) The drawings of the embodiments of the present disclosure only involve the structures involved in the embodiments of the present disclosure, and other structures can be referred to the general design.

[0190] (2) For the sake of clarity, the thickness of a layer or region is exaggerated or reduced in the drawings used to describe the embodiments of the present disclosure, i.e., these drawings are not drawn according to the actual proportions.

[0191] (3) In the case of no conflict, the embodiments and features in the embodiments of the present disclosure can be combined with each other to obtain new embodiments.

[0192] The above is only a specific implementation of the present disclosure, but the protection scope of the present disclosure is not limited thereto, and the protection scope of the present disclosure should be subject to the protection scope of the claims.

Claims

1. A display substrate, comprising: a substrate substrate; and a light emitting element disposed on the substrate substrate, wherein the light emitting element comprises a first electrode comprising a conductive metal oxide layer; and a reflective structure is included between at least part of the conductive metal oxide layer and the substrate substrate, and the reflective structure is on a side of the conductive metal oxide layer close to the substrate substrate. The reflective structure comprises a plurality of first units stacked, and each of the first units comprises a first reflective film and a second reflective film stacked, wherein a first refractive index of the first reflective film is greater than a second refractive index of the second reflective film. The first reflective film and the second reflective film are made of inorganic material, organic material, or a combination of inorganic material and organic material. The first reflective film is made of at least one of Nb2O5, TA2O5, TiO2, and epoxy resin; and the second reflective film is made of SiO2. 2.The display substrate of claim 1, wherein, The light emitting element is a blue light emitting element, and a difference between the first refractive index and the second refractive index is greater than or equal to 0.

4. 3.The display substrate of claim 2, wherein, The reflective structure comprises six or more first units. 4.The display substrate according to claim 2 or 3, wherein, The light emitting element is a green light emitting element, and a difference between the first refractive index and the second refractive index is greater than or equal to 0.

7. 5.The display substrate of claim 4, wherein, The light emitting element is a red light emitting element, and a difference between the first refractive index and the second refractive index is greater than or equal to 0.

5. 6.The display substrate of claim 5, wherein, The light emitting element comprises a blue light emitting element and a green light emitting element, and a difference between the first refractive index and the second refractive index is greater than or equal to 1. 7.The display substrate of claim 2, wherein, The light emitting element comprises a blue light emitting element, a green light emitting element, and a red light emitting element, and a difference between the first refractive index and the second refractive index is greater than or equal to 1.

4. 8.The display substrate of claim 2, wherein, The conductive metal oxide layer has a thickness of 50 angstroms to 400 angstroms. 9.The display substrate of claim 2, wherein, A refractive index of a layer of the reflective structure in contact with the conductive metal oxide layer is greater than or equal to 2.

2. 10.The display substrate of claim 2, wherein, 13.The display substrate according to any one of claims 1 to 12, further comprising a driving transistor disposed between the light emitting element and the substrate substrate, and a planarization layer disposed between the driving transistor and the light emitting element, wherein the driving transistor is configured to drive the light emitting element to emit light, and the first electrode is electrically connected to a first source / drain electrode of the driving transistor through a via structure disposed in the planarization layer. 11.The display substrate of claim 1, wherein, The reflective structure covers a side surface and a surface of the planarization layer away from the substrate substrate. 12.The display substrate of claim 11, wherein, The planarization layer has a thickness of 0.8 micrometers to 2 micrometers. The reflective structure has a stepped portion at a position of the via structure, and a planar shape of the stepped portion comprises at least one of a circular ring shape and a polygonal ring shape. The planar shape of the stepped portion is a circular ring shape, the circular ring shape comprises a first circular shape on an outer side, a planar shape of the via structure is a second circular shape, and a ratio of a diameter of the first circular shape to a diameter of the second circular shape is greater than or equal to 0.5 and less than 1. 14.The display substrate of claim 13, wherein, A slope angle of the stepped portion is greater than 0° and less than or equal to 60°. 15.The display substrate of claim 14, wherein, ​ 16.The display substrate of claim 13, wherein, ​ 17.The display substrate of claim 16, wherein, ​ 18.The display substrate of claim 16, wherein, ​ 19. The display substrate of claim 13, wherein, The reflective structure is a structure provided on the whole surface and has openings only at positions corresponding to the via structures.

20. The display substrate according to any one of claims 1-19, wherein, The light emitting element includes a red light emitting element, a green light emitting element, and a blue light emitting element, the first electrode of the red light emitting element includes a laminated structure of a first indium tin oxide layer, a silver metal layer, and a second indium tin oxide layer, the first electrode of at least one of the green light emitting element and the blue light emitting element includes a third indium tin oxide layer, and the third indium tin oxide layer and the substrate substrate have the reflective structure therebetween. 21.The display substrate of claim 20, wherein, The first electrode corresponding to the green light emitting element and / or the blue light emitting element further includes a metal reflection layer on a side of the reflective structure close to the substrate substrate.

22. A display substrate, comprising: a substrate substrate; a light emitting element on a side of the substrate substrate; a drive transistor between the light emitting element and the substrate substrate; a reflective structure between the light emitting element and the substrate substrate, wherein the reflective structure is provided on the whole surface and has a plurality of openings arranged in an array, and the light emitting element is connected to the drive transistor through the openings.

23. The display substrate of claim 22, wherein, The light emitting element includes a red light emitting element, a green light emitting element, and a blue light emitting element, the first electrode of the red light emitting element includes a laminated structure of a first indium tin oxide layer, a silver metal layer, and a second indium tin oxide layer, the first electrode of at least one of the green light emitting element and the blue light emitting element includes a third indium tin oxide layer, and the third indium tin oxide layer and the substrate substrate have the reflective structure therebetween.

24. The display substrate of claim 23, wherein, The first electrode of the green light emitting element includes a laminated structure of a first indium tin oxide layer, a silver metal layer, and a second indium tin oxide layer, the first electrode of the blue light emitting element includes the third indium tin oxide layer, and the third indium tin oxide layer and the substrate substrate have the reflective structure therebetween. 25.The display substrate of claim 23, wherein, The first electrode of the green light emitting element and the blue light emitting element both include the third indium tin oxide layer, and the third indium tin oxide layer and the substrate substrate have the reflective structure therebetween.

26. The display substrate according to any one of claims 22-25, wherein, The first electrode of the red light emitting element, the first electrode of the green light emitting element, and the first electrode of the blue light emitting element are all electrically connected to the corresponding drive transistor.

27. A display device, comprising the display substrate according to any one of claims 1 to 26.

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