Display substrate, preparation method thereof and display device

Abstract

At least one embodiment of the invention provides a display substrate, a preparation method of the display substrate and a display device. The pixel limiting layer is positioned on the substrate and comprises a plurality of pixel openings and pixel spacing parts for spacing the plurality of pixel openings; the sub-pixels are located on the substrate and correspond to the pixel openings in a one-to-one mode, each sub-pixel comprises a light-emitting element, and each light-emitting element comprises an anode; the reflection structure is in contact with the anode on the side, close to the substrate, of the anode and corresponds to at least part of the pixel openings, and according to the embodiment of the invention, the reflection structure which is in contact with the anode and corresponds to at least part of the pixel openings is arranged on the side, close to the substrate, of the anode, so that the light reflection capability of the sub-pixel can be improved.

Description

Display substrate, manufacturing method thereof, and display device TECHNICAL FIELD

[0001] Embodiments of the present disclosure relate to a display substrate, a manufacturing method thereof, and a display device. BACKGROUND

[0002] An organic light emitting diode (OLED) is a self-luminous display device that does not require any light source, i.e., an active light emitting display device, and has advantages of high luminous efficiency, wide viewing angle, high contrast, low driving voltage, extremely high response speed, lightness and thinness, bendability, and low cost, thereby having a good development prospect in the field of display technology. With the continuous development of display technology, a flexible display device using an OLED as a light emitting device and controlled by a thin film transistor (TFT) has become a mainstream product in the current display field, and with the continuous development of display technology, it is inevitable to optimize the display effect.

[0003] An organic light emitting display device includes an organic light emitting diode including an emission layer formed between two electrodes. The organic light emitting diode generates an exciton by injecting an electron and a hole into the emission layer through an electron injection electrode (i.e., a cathode) and a hole injection electrode (i.e., an anode) and recombining the electron and the hole within the emission layer, and can emit light when the exciton transitions from an excited state to a ground state. Light emitting diodes are classified into a top emission mode, a bottom emission mode, and a bidirectional emission mode according to the direction of light emission. The organic light emitting display device can also be classified into a passive matrix type and an active matrix type.

[0004] SUMMARY

[0005] At least one embodiment of the present disclosure provides a display substrate, a manufacturing method thereof, and a display device. The display substrate includes a pixel definition layer on a substrate, the pixel definition layer including a plurality of pixel openings and a pixel separation portion separating the plurality of pixel openings; a plurality of sub-pixels on the substrate, corresponding to the plurality of pixel openings one by one, each sub-pixel including a light emitting element, the light emitting element including an anode; and a reflective structure in contact with the anode on a side of the anode close to the substrate and corresponding to at least part of the pixel openings. At least one embodiment of the present disclosure can improve the light reflection capability of the sub-pixel by providing a reflective structure in contact with the anode on a side of the anode close to the substrate and corresponding to at least part of the pixel openings.

[0006] The display substrate provided in at least one embodiment of the present disclosure includes a substrate substrate; a pixel definition layer on the substrate substrate, including a plurality of pixel openings and a pixel separation portion separating the plurality of pixel openings; a plurality of sub-pixels on the substrate substrate, corresponding to the plurality of pixel openings one by one, each of the sub-pixels including a light emitting element including an anode; and a reflective structure in contact with the anode on a side of the anode close to the substrate substrate and corresponding to at least part of the pixel opening.

[0007] For example, in the display substrate provided in at least one embodiment of the present disclosure, the reflective structure has a first width in a first direction, the pixel opening has a second width in the first direction, the first width is greater than the second width, and the first direction is a direction parallel to a main surface of the substrate substrate.

[0008] For example, in the display substrate provided in at least one embodiment of the present disclosure, a direct projection of the reflective structure on the substrate substrate covers a direct projection of the pixel opening corresponding thereto on the substrate substrate.

[0009] For example, in the display substrate provided in at least one embodiment of the present disclosure, the reflective structure includes a first reflective film and a second reflective film stacked and arranged adjacent to each other, and the first reflective film and the second reflective film have different refractive indexes.

[0010] For example, the display substrate provided in at least one embodiment of the present disclosure further includes a driving transistor for driving the light emitting element to emit light, wherein the anode of the light emitting element is electrically connected to a first source / drain electrode of the driving transistor through an auxiliary electrode.

[0011] For example, the display substrate provided in at least one embodiment of the present disclosure further includes a first planarization layer and a second planarization layer stacked on the driving transistor, wherein the auxiliary electrode is electrically connected to the first source / drain electrode through a first via structure provided in the first planarization layer, and the anode is electrically connected to the auxiliary electrode through a second via structure provided in the second planarization layer.

[0012] For example, in the display substrate provided in at least one embodiment of the present disclosure, a direct projection of the first via structure on the substrate substrate and a direct projection of the second via structure on the substrate substrate do not have an overlapping portion.

[0013] For example, in the display substrate provided in at least one embodiment of the present disclosure, the reflective structure is arranged between the first planarization layer and the second planarization layer, and the second planarization layer covers a side surface of the reflective structure and a part of a surface of the reflective structure away from the substrate substrate.

[0014] For example, in the display substrate provided in at least one of the embodiments of the present disclosure, the thickness of the portion of the reflective structure protruding from the first planarization layer in a direction perpendicular to the main surface of the substrate is less than 10 times the thickness of the anode.

[0015] For example, in the display substrate provided in at least one of the embodiments of the present disclosure, the anode includes a first sub-anode in contact with the auxiliary electrode, and a second sub-anode spaced apart from the auxiliary electrode, the second sub-anode at least partially overlapping the first sub-anode.

[0016] For example, in the display substrate provided in at least one of the embodiments of the present disclosure, the second sub-anode covers the surface and the side surface of the first sub-anode away from the substrate.

[0017] For example, in the display substrate provided in at least one of the embodiments of the present disclosure, a third planarization layer is disposed between the second sub-anode and the first sub-anode, and the second sub-anode is electrically connected to the first sub-anode through a third via structure disposed in the third planarization layer.

[0018] For example, in the display substrate provided in at least one of the embodiments of the present disclosure, the plurality of sub-pixels includes a first color sub-pixel, a second color sub-pixel, and a third color sub-pixel, the reflective structure corresponds to the pixel opening of the first color sub-pixel, the second sub-pixel, and the third sub-pixel, and the anode included in the corresponding light emitting element in the plurality of sub-pixels includes a first electrode end and a second electrode end, the first electrode end is in contact with the reflective structure, and the second electrode end is electrically connected to the corresponding first source-drain electrode through the auxiliary electrode.

[0019] For example, in the display substrate provided in at least one of the embodiments of the present disclosure, the plurality of sub-pixels includes a first color sub-pixel, the anode included in the corresponding light emitting element of the first color sub-pixel includes a first electrode end and a second electrode end, the first electrode end is in contact with the reflective structure, and the second electrode end is electrically connected to the corresponding first source-drain electrode through the auxiliary electrode.

[0020] For example, in the display substrate provided in at least one of the embodiments of the present disclosure, the plurality of sub-pixels further includes a second color sub-pixel, the anode included in the corresponding light emitting element of the second color sub-pixel includes a third electrode end and a fourth electrode end, the third electrode end is in contact with the reflective structure, and the fourth electrode end is electrically connected to the corresponding first source-drain electrode through the auxiliary electrode.

[0021] For example, the display substrate provided by at least one of the embodiments of the present disclosure further includes a fourth planarization layer disposed on the driving transistor, wherein the fourth planarization layer is provided with a groove structure, a first part of the reflection structure is disposed in the groove structure, and a second part of the reflection structure protrudes out of the fourth planarization layer and is disposed on a side of the first part away from the substrate.

[0022] For example, in the display substrate provided by at least one of the embodiments of the present disclosure, in a direction perpendicular to a main surface of the substrate, a depth of the groove structure is less than or equal to a thickness of the fourth planarization layer.

[0023] For example, the display substrate provided by at least one of the embodiments of the present disclosure further includes a driving transistor for driving the light emitting element to emit light, wherein the anode of the light emitting element is in contact with and electrically connected to a first source / drain electrode of the driving transistor.

[0024] For example, in the display substrate provided by at least one of the embodiments of the present disclosure, the anode of the light emitting element includes a first electrode end and a second electrode end, the first electrode end is in contact with the reflection structure, and the second electrode end is in contact with and electrically connected to the first source / drain electrode.

[0025] For example, in the display substrate provided by at least one of the embodiments of the present disclosure, the fourth planarization layer covers a side surface of the first part of the reflection structure, and the anode of the light emitting element covers a side surface and a surface away from the substrate of the second part of the reflection structure.

[0026] For example, in the display substrate provided by at least one of the embodiments of the present disclosure, in a direction perpendicular to a main surface of the substrate, a thickness of the second part of the reflection structure is less than 10 times a thickness of the anode.

[0027] For example, in the display substrate provided by at least one of the embodiments of the present disclosure, the anode has a plurality of stepped structures in a plane perpendicular to a main surface of the substrate.

[0028] For example, in the display substrate provided by at least one of the embodiments of the present disclosure, the reflection structure is a plurality of independent structures arranged in an array.

[0029] For example, in the display substrate provided by at least one of the embodiments of the present disclosure, a plurality of the reflection structures are connected as an integral structure, and the plurality of the reflection structures are arranged in an array.

[0030] In some embodiments of the present disclosure, a display substrate is provided. The display substrate includes a substrate, a pixel definition layer on the substrate, including a plurality of pixel openings and a pixel separation portion separating the plurality of pixel openings, and a plurality of sub-pixels on the substrate, corresponding to the plurality of pixel openings one by one, each of the sub-pixels including a light emitting element including an anode, the anode having a plurality of stepped structures in a plane perpendicular to a main surface of the substrate.

[0031] For example, in some embodiments of the present disclosure, the display substrate further includes a reflective structure, wherein the reflective structure is in contact with the anode on a side of the anode close to the substrate, and corresponds to at least part of the pixel opening.

[0032] For example, in some embodiments of the present disclosure, the reflective structure has a first width in a first direction, the pixel opening has a second width in the first direction, the first width is greater than the second width, and the first direction is parallel to the substrate.

[0033] For example, in some embodiments of the present disclosure, a projection of the reflective structure on the substrate covers a projection of the pixel opening corresponding thereto on the substrate.

[0034] For example, in some embodiments of the present disclosure, the reflective structure includes a first reflective film and a second reflective film stacked and arranged adjacent to each other, the first reflective film and the second reflective film having different refractive indexes.

[0035] For example, in some embodiments of the present disclosure, the reflective structure is a plurality of independent structures arranged in an array.

[0036] For example, in some embodiments of the present disclosure, a plurality of the reflective structures are connected as an integral structure, and the plurality of the reflective structures are arranged in an array.

[0037] In some embodiments of the present disclosure, a display device is provided. The display device includes any of the display substrates described above.

[0038] The display substrate manufacturing method provided in at least one embodiment of the present disclosure includes: providing a substrate; forming a pixel definition layer on the substrate, wherein the pixel definition layer includes a plurality of pixel openings and a pixel separation portion separating the plurality of pixel openings; forming a sub-pixel corresponding to each of the pixel openings in the plurality of pixel openings, wherein each of the sub-pixels includes a light emitting element including an anode; and forming a reflection structure in contact with the anode on a side of the anode close to the substrate, wherein the reflection structure corresponds to at least part of the pixel opening.

[0039] For example, in the display substrate manufacturing method provided in at least one embodiment of the present disclosure, the reflection structure includes a first reflection film and a second reflection film stacked and arranged adjacent to each other, and the first reflection film and the second reflection film have different refractive indexes.

[0040] For example, the display substrate manufacturing method provided in at least one embodiment of the present disclosure further includes forming a drive transistor for driving the light emitting element to emit light on the substrate, wherein the anode of the light emitting element is electrically connected to a first source / drain electrode of the drive transistor through an auxiliary electrode.

[0041] For example, the display substrate manufacturing method provided in at least one embodiment of the present disclosure further includes sequentially forming a first planarization layer and a second planarization layer on the drive transistor, wherein the auxiliary electrode is electrically connected to the first source / drain electrode through a first via structure arranged in the first planarization layer; and the anode is electrically connected to the auxiliary electrode through a second via structure arranged in the second planarization layer.

[0042] For example, in the display substrate manufacturing method provided in at least one embodiment of the present disclosure, the first via structure does not overlap with the second via structure in a direction perpendicular to a main surface of the substrate.

[0043] For example, the display substrate manufacturing method provided in at least one embodiment of the present disclosure further includes forming a fourth planarization layer on the drive transistor, wherein a recess structure is formed in the fourth planarization layer, a first part of the reflection structure is formed in the recess structure, and a second part of the reflection structure protrudes out of the fourth planarization layer and is formed on a side of the first part away from the substrate.

[0044] For example, in the display substrate manufacturing method provided in at least one embodiment of the present disclosure, a depth of the recess structure is less than or equal to a thickness of the fourth planarization layer in a direction perpendicular to a main surface of the substrate.

[0045] For example, the preparation method provided by at least one embodiment of the present disclosure further includes forming a driving transistor for driving the light-emitting element to emit light on the substrate, wherein the anode of the light-emitting element and a first source-drain electrode of the driving transistor are in contact and electrically connected. BRIEF DESCRIPTION OF DRAWINGS

[0046] In order to more clearly illustrate the technical solutions of the embodiments of the present disclosure, the drawings of the embodiments will be briefly introduced as follows. Obviously, the drawings in the following description are only related to some embodiments of the present disclosure and not limit the present disclosure.

[0047] FIG. 1 is a schematic view of a cross-sectional structure of a display substrate according to at least one embodiment of the present disclosure;

[0048] FIG. 2 is a schematic view of a planar structure of the display substrate shown in FIG. 1;

[0049] FIG. 3 is a schematic view of a circuit structure of a pixel circuit according to at least one embodiment of the present disclosure;

[0050] FIG. 4 is a timing diagram of a driving method of the pixel circuit shown in FIG. 3;

[0051] FIG. 5 is a schematic view of a transmission electron microscope of a reflection structure according to at least one embodiment of the present disclosure;

[0052] FIG. 6 is a schematic view of a cross-sectional structure of another display substrate according to at least one embodiment of the present disclosure;

[0053] FIG. 7 is a schematic view of a planar structure of the display substrate shown in FIG. 6;

[0054] FIG. 8 is a schematic view of a cross-sectional structure of still another display substrate according to at least one embodiment of the present disclosure;

[0055] FIG. 9 is a schematic view of a cross-sectional structure of still another display substrate according to at least one embodiment of the present disclosure;

[0056] FIG. 10 is a schematic view of a cross-sectional structure of still another display substrate according to at least one embodiment of the present disclosure;

[0057] FIG. 11 is a schematic view of a cross-sectional structure of still another display substrate according to at least one embodiment of the present disclosure;

[0058] FIG. 12 is a schematic view of a cross-sectional structure of a peripheral region of the display substrate shown in FIG. 11;

[0059] FIG. 13 is a schematic view of a cross-sectional structure of still another display substrate according to at least one embodiment of the present disclosure;

[0060] FIG. 14 is a schematic view of a cross-sectional structure of still another display substrate according to at least one embodiment of the present disclosure;

[0061] FIG. 15 is a schematic view of a cross-sectional structure of a display substrate according to at least one embodiment of the present disclosure;

[0062] FIG. 16 is a block diagram of a display device according to at least one embodiment of the present disclosure; and

[0063] FIG. 17 is a flowchart of a method for manufacturing a display substrate according to at least one embodiment of the present disclosure. DETAILED DESCRIPTION

[0064] In order to make the objects, technical solutions, and advantages of the embodiments of the present disclosure clearer, the technical solutions of the embodiments of the present disclosure will be described clearly and completely below with reference to the drawings of the embodiments of the present disclosure. Obviously, the described embodiments are some but not all of the embodiments of the present disclosure. Based on the described embodiments of the present disclosure, all other embodiments obtained by a person of ordinary skill in the art without creative effort belong to the range of the present disclosure.

[0065] Unless otherwise defined, technical terms or scientific terms used in the present disclosure shall have the ordinary meanings as understood by a person of ordinary skill in the art to which the present disclosure belongs. The terms "first", "second", and similar terms used in the present disclosure do not denote any order, quantity, or importance, but are used to distinguish different components. The terms "include", "contain", and similar terms mean that the elements or objects before the terms encompass the elements or objects listed after the terms and their equivalents, and do not exclude other elements or objects. The terms "connect" or "connected" and similar terms are not limited to physical or mechanical connections, but can include electrical connections, whether direct or indirect. The terms "upper", "lower", "left", "right", and the like are used only to represent relative positional relationships, and when the absolute positions of the described objects are changed, the relative positional relationships can also be changed accordingly.

[0066] Unless otherwise defined, the terms "parallel", "perpendicular", and "same" and the like used in the embodiments of the present disclosure include the strictly "parallel", "perpendicular", "same" and the like, and "approximately parallel", "approximately perpendicular", "approximately same" and the like with a certain error. For example, the "approximately" above can mean that the difference between the compared objects is within 10% or 5% of the average value of the compared objects. In the following description of the embodiments of the present disclosure, when the number of a component or element is not specifically indicated, it means that the component or element can be one or multiple, or can be understood as at least one. "At least one" means one or more, and "multiple" means at least two. In the embodiments of the present disclosure, "disposed in the same layer" refers to the relationship between multiple film layers formed by the same material after the same step (for example, one patterning process). Here, "in the same layer" does not always mean that the thicknesses of the multiple film layers are the same or the heights of the multiple film layers in the cross-sectional view are the same.

[0067] The organic light emitting diode display device has excellent picture quality, and the display device including the organic light emitting diode display device has become a high-end display product. The anode of the organic light emitting diode display device usually adopts a three-layer structure of an indium tin oxide layer, a silver metal layer and an indium tin oxide layer. For the silver metal layer, although it has a relatively high reflectivity, for visible light with a wavelength of 430 nm to 700 nm, its reflectivity is only 91% to 97%. In particular, the reflectivity of the silver metal layer to blue light is relatively low, resulting in a relatively low light emitting efficiency of the organic light emitting diode display device. The inventors of the present disclosure noticed that by introducing a distributed Bragg reflector (DBR) in the light emitting diode display device, jointly designing the reflective structure and the anode of the light emitting diode device, and adjusting the refractive index of different film layers of the distributed Bragg reflector and the thickness of different film layers to select a suitable number of film layers of the distributed Bragg reflector, the reflectivity of the distributed Bragg reflector to blue light can be increased to 99%, thereby the overall light emitting efficiency of the organic light emitting diode display device can be improved, and in particular, the light emitting efficiency of the blue light emitting diode display device can be more significantly improved, thereby the power consumption of the organic light emitting diode display device can be reduced, and the service life of the organic light emitting diode display device can be improved.

[0068] For example, at least one embodiment of the present disclosure provides a display substrate, comprising: a substrate substrate, a pixel definition layer on the substrate substrate, the pixel definition layer comprising a plurality of pixel openings and a pixel spacing portion spacing the plurality of pixel openings. A plurality of sub-pixels are located on the substrate substrate, and the plurality of sub-pixels correspond one-to-one to the plurality of pixel openings, each sub-pixel comprising a light emitting element, the light emitting element comprising an anode, a reflective structure contacting the anode on a side of the anode close to the substrate substrate, and the reflective structure corresponding to at least part of the pixel opening. Embodiments of the present disclosure set the reflective structure at a position corresponding to at least part of the sub-pixel on the display substrate, so as to improve the light emitting efficiency of the organic light emitting diode display device included in the display substrate as a whole, thereby reducing the power consumption and improving the service life of the organic light emitting diode display device included in the display substrate.

[0069] For example, FIG. 1 is a schematic diagram of a cross-sectional structure of a display substrate provided by at least one embodiment of the present disclosure. As shown in FIG. 1, the display substrate 100 includes a substrate 101, a pixel definition layer 102 on the substrate 101, the pixel definition layer 102 including a plurality of pixel openings 103 and a plurality of pixel intervals 104 between the pixel openings 103. A plurality of sub-pixels 105 are on the substrate 101, and the plurality of sub-pixels 105 correspond to the plurality of pixel openings 103 one-to-one, each sub-pixel 105 including a light emitting element 106, each light emitting element 106 including an anode 107, a reflective structure 108 in contact with the anode 107 on a side of the anode 107 close to the substrate 101, and the reflective structure 108 corresponding to at least part of the pixel opening 103. In the display substrate shown in FIG. 1, the reflective structure is provided at a position corresponding to at least part of the sub-pixel, which can improve the light emitting efficiency of the organic display substrate, thereby reducing power consumption and improving the service life of the display substrate.

[0070] For example, the reflective structure corresponding to at least part of the pixel opening can mean that one reflective structure corresponds to one pixel opening, or a plurality of reflective structures correspond to a plurality of pixel openings one-to-one. For example, in the display substrate shown in FIG. 1, the orthographic projection of the reflective structure 108 on the substrate 101 covers the orthographic projection of the pixel opening 103 corresponding thereto on the substrate 101, i.e., the orthographic projection of the pixel opening 103 corresponding to the reflective structure 108 on the substrate 101 is within the orthographic projection of the reflective structure 108 on the substrate 101, so that the light emitted from the light emitting element of the corresponding sub-pixel can be reflected through the reflective structure 108, thereby maximizing the light emitting efficiency of the display substrate through the reflective structure 108.

[0071] For example, in one example, in the display substrate shown in FIG. 1, the reflective structure 108 includes a first reflective film and a second reflective film stacked and arranged adjacent to each other, the first reflective film and the second reflective film having different refractive indices. For example, the first reflective film has a refractive index of n1, the second reflective film has a refractive index of n2, and the first reflective film and the second reflective film have different thicknesses h1 and h2, respectively. In order for the display substrate to achieve a reflectivity of 99% or more, the number of film layers included in the reflective structure 108 is 10 or more, and the overall thickness of the reflective structure 108 is 1 micrometer or more. However, this can form a large step difference between the surface of the reflective structure 108 away from the substrate 101 and the surface of the reflective structure 108 close to the substrate 101.

[0072] For example, in the structure shown in FIG. 1, the reflective structure 108 is disposed on the planarization layer 109, and the anode 107 is disposed on the reflective structure 108, and the anode 107 is electrically connected directly through the via structure 110 disposed in the planarization layer 109 and the first source-drain electrode 1111 of the driving transistor 111, so that the driving transistor 111 drives the light emitting element 106 to light up the light emitting element 106.

[0073] For example, as shown in FIG. 1, the driving transistor 111 is a top-gate thin film transistor, which includes an active layer 1112, a gate insulating layer 1115 disposed on the active layer 1112, a gate 1114 disposed on the gate insulating layer 1115, an interlayer insulating layer disposed on the gate 1114, and a first source-drain electrode 1111 and a second source-drain electrode 1113 disposed on the interlayer insulating layer, which can electrically insulate the gate 1114, the first source-drain electrode 1111 and the second source-drain electrode 1113. For example, the first source-drain electrode 1111 is the drain electrode of the driving transistor 111, and the second source-drain electrode 1113 is the source electrode of the driving transistor 111, which can be electrically connected with a data line (not shown).

[0074] For example, as shown in FIG. 1, a buffer layer 112 is further disposed between the substrate 101 and the driving transistor 111, which can avoid damaging the substrate 101 when forming the various layer structures of the driving transistor and the light emitting element on the substrate 101.

[0075] For example, in one example, the material of the anode 107 is transparent metal oxide. For example, the transparent metal oxide is indium gallium zinc oxide, and although only one sub-pixel is shown in FIG. 1, the display substrate actually has sub-pixels of multiple different colors. For example, in one example, the anode 107 is defined as a red sub-pixel region, a green sub-pixel region and a blue sub-pixel region, and the material of the anode 107 is transparent metal oxide, and the display substrate has a bottom emission structure. For example, by disposing the reflective structure 108, the transmittance of the anode 107 can reach 99%.

[0076] For example, in another example, the anode 107 includes a first conductive layer and a second conductive layer disposed in layers, the material of the first conductive layer is a metal material with high reflectivity, and the material of the second conductive layer is transparent conductive material. The material of the first conductive layer is at least one of metal aluminum and metal silver. The material of the second conductive layer is at least one of indium tin oxide and indium zinc oxide.

[0077] For example, FIG. 2 is a schematic diagram of a planar structure of the display substrate shown in FIG. 1. In combination with FIGS. 1 and 2, the planarization layer 109 covers the surface of the anode 107 in the via structure 110. In addition to the structure in the via structure 110, the orthographic projection of the anode 107 on the substrate 101 and the orthographic projection of the reflective structure 108 on the substrate 101 are both located within the orthographic projection of the planarization layer 109 on the substrate 101. The anode 107 covers the surface and side surface of the reflective structure 108 away from the substrate 101. Although the planar shape of the via structure 110 shown in FIG. 2 is circular, embodiments of the present disclosure are not limited thereto, and the planar shape of the via structure 110 can also be rectangular, elliptical, etc., as long as stable electrical connection between the anode 107 and the first source-drain electrode 1111 can be achieved.

[0078] For example, the substrate 101 can be a glass substrate, a quartz substrate, or a flexible display substrate, etc., and embodiments of the present disclosure are not limited thereto.

[0079] For example, in one example, the display substrate 100 includes a plurality of pixel units arranged in a matrix, each pixel unit including a red sub-pixel, a green sub-pixel, and a blue sub-pixel. Alternatively, each pixel unit includes a white sub-pixel and a color conversion layer configured to convert white light emitted from the white sub-pixel into red light, green light, and blue light. The display substrate includes an active type sub-pixel including a switching transistor configured to transmit a data signal in response to a scan signal, a capacitor configured to store a data voltage corresponding to the data signal, a driving transistor configured to generate a driving current corresponding to the data voltage, and an organic light emitting diode configured to emit light corresponding to the driving current. For example, the active type sub-pixel can be configured in a 2T1C (two transistors and one capacitor) structure including the switching transistor, the capacitor, the driving transistor, and the organic light emitting diode, and can be further configured to include at least one transistor and at least one capacitor to form a pixel circuit of another structure, and can be formed in one of a top emission mode, a bottom emission mode, and a dual emission mode according to a light emission direction.

[0080] For example, FIG. 3 is a schematic diagram of a circuit structure of a pixel circuit according to at least one embodiment of the present disclosure. As shown in FIG. 3, the pixel circuit 121 includes a first transistor T1, a second transistor T2, a driving transistor T3, a fourth transistor T4, a fifth transistor T5, a sixth transistor T6, a seventh transistor T7, and a storage capacitor C.

[0081] For example, as shown in FIG. 3, in order to further reduce the refresh frequency, the material of the active layer of the first transistor T1 and the second transistor T2 can be designed as IGZO, and the second transistor T2 is designed as a double-gate structure to reduce the leakage current, so as to realize the adjustment of the dynamic refresh frequency of 1-120Hz, so as to reduce the driving power consumption and prolong the service life of the display substrate.

[0082] For example, as shown in FIG. 3, the first transistor T1 is a first reset transistor T1, the second transistor T2 is a threshold compensation transistor T2, the fourth transistor T4 is a data writing transistor T4, the fifth transistor T5 is a second light emitting control transistor T5, the sixth transistor T6 is a first light emitting control transistor T6, and the seventh transistor T7 is a second reset control transistor T7.

[0083] For example, the first electrode of the first transistor T1 is connected to the N1 node, i.e. electrically connected to the gate of the driving transistor T3, the second electrode of the first transistor T1 is connected to the first initial signal terminal Vinit1, i.e. electrically connected to the first reset signal line to receive a reset signal, and the gate of the first transistor T1 is connected to the first reset signal terminal Re1, i.e. electrically connected to the reset control signal line to receive a reset control signal; the first electrode of the second transistor T2, i.e. the threshold compensation transistor, is connected to the N1 node, i.e. electrically connected to the gate of the driving transistor T3, the second electrode of the second transistor T2 is connected to the second electrode of the driving transistor T3, and the gate of the second transistor T2 is connected to the first gate driving signal terminal G1 to receive a compensation control signal; the gate of the driving transistor T3 is connected to the N1 node, to be connected to the first plate of the storage capacitor C, the first electrode of the first transistor T1 and the first electrode of the second transistor T2; the first electrode of the fourth transistor T4, i.e. the data writing transistor, is connected to the data signal terminal Data to receive a data signal, the second electrode of the fourth transistor T4 is connected to the first electrode of the driving transistor T3, and the gate of the fourth transistor T4 is connected to the second gate driving signal terminal G2 to receive a scanning signal; the first electrode of the fifth transistor T5, i.e. the second light emitting control transistor, is connected to the first power supply terminal VDD to receive a first power supply signal, the second electrode of the fifth transistor T5 is connected to the first electrode of the driving transistor T3, and the gate of the fifth transistor T5 is connected to the light emitting control signal terminal EM to receive a light emitting control signal; the first electrode of the sixth transistor T6, i.e. the first light emitting control transistor, is connected to the second electrode of the driving transistor T3, the second electrode of the sixth transistor T6 is connected to the first electrode of the seventh transistor T7, and the gate of the sixth transistor T6 is connected to the light emitting control signal terminal EM to receive a light emitting control signal; the second electrode of the seventh transistor T7 is connected to the second initial signal terminal Vinit2, i.e. electrically connected to the second reset power supply signal line to receive a reset signal Vinit, and the gate of the seventh transistor T7 is connected to the second reset signal terminal Re2, i.e. electrically connected to the reset control signal line to receive a reset control signal; the first plate of the storage capacitor C is connected to the N1 node and electrically connected to the gate of the driving transistor T3, and the second plate of the storage capacitor C is connected to the first power supply terminal VDD, i.e. connected to the first power supply signal line. The pixel circuit can be connected to the light emitting element 106, which can be an organic light emitting diode (OLED), and the pixel circuit is used to drive the light emitting element 106 to emit light. The light emitting element 106 can be connected between the second electrode of the sixth transistor T6 and the second power supply terminal VSS, i.e. connected to the second power supply signal line.

[0084] For example, the first power supply signal line refers to a signal line outputting a voltage signal VDD, which can be connected to a voltage source to output a constant voltage signal, such as a positive voltage signal. The second power supply signal line refers to a signal line outputting a voltage signal VSS, which can be connected to a voltage source to output a constant voltage signal, such as a negative voltage signal.

[0085] For example, the scanning signal and the compensation control signal can be the same, i.e., the gate of the data writing transistor T4 and the gate of the threshold compensation transistor T2 can be electrically connected to the same signal line to receive the same signal, so as to reduce the number of signal lines. For example, the gate of the data writing transistor T4 and the gate of the threshold compensation transistor T2 can also be electrically connected to different signal lines, i.e., the gate of the data writing transistor T4 is electrically connected to a second scanning signal line (second gate line), and the gate of the threshold compensation transistor T2 is electrically connected to a first scanning signal line (first gate line), and the signals transmitted by the first scanning signal line and the second scanning signal line can be the same or different, so that the gate of the data writing transistor T4 and the gate of the threshold compensation transistor T2 can be controlled separately, thereby increasing the flexibility of controlling the pixel circuit.

[0086] For example, the first light emitting control transistor T6 and the second light emitting control transistor T5 can input the same light emitting control signal, i.e., the gate of the first light emitting control transistor T6 and the gate of the second light emitting control transistor T5 can be electrically connected to the same signal line to receive the same signal, thereby reducing the number of signal lines. For example, the gate of the first light emitting control transistor T6 and the gate of the second light emitting control transistor T5 can also be electrically connected to different light emitting control signal lines, and the signals transmitted by the different light emitting control signal lines can be the same or different.

[0087] For example, the second reset transistor T7 and the first reset transistor T1 can input the same reset control signal, i.e., the gate of the second reset transistor T7 and the gate of the first reset transistor T1 can be electrically connected to the same signal line to receive the same signal, thereby reducing the number of signal lines. For example, the gate of the second reset transistor T7 and the gate of the first reset transistor T1 can also be electrically connected to different reset control signal lines, and the signals on the different reset control signal lines can be the same or different.

[0088] For example, the first transistor T1 and the second transistor T2 can be N-type transistors. For example, the first transistor T1 and the second transistor T2 can be N-type metal oxide transistors, which have a small leakage current, thereby avoiding the leakage of the N1 node through the first transistor T1 and the second transistor T2 in the light-emitting stage. Meanwhile, the driving transistor T3, the fourth transistor T4, the fifth transistor T5, the sixth transistor T6, and the seventh transistor T7 can be P-type transistors, for example, P-type low-temperature polysilicon transistors, which have a high carrier mobility, thereby facilitating the realization of a display panel with high resolution, high response speed, high pixel density, and high aperture ratio. The first initial signal terminal Vinit1 and the second initial signal terminal Vinit2 can output the same or different voltage signals according to actual conditions.

[0089] For example, FIG. 4 is a timing diagram of a driving method of the pixel circuit in FIG. 3. For example, in FIG. 4, G1 represents the timing of the first gate driving signal terminal G1, G2 represents the timing of the second gate driving signal terminal G2, Re1 represents the timing of the first reset signal terminal Re1, Re2 represents the timing of the second reset signal terminal Re2, EM represents the timing of the light-emitting control signal terminal EM, and Data represents the timing of the data signal terminal Data. The driving method of the pixel circuit can include a first reset stage t1, a compensation stage t2, a second reset stage t3, and a light-emitting stage t4. In the first reset stage t1, the first reset signal terminal Re1 outputs a high-level signal, the first transistor T1 is turned on, and the first initial signal terminal Vinit1 inputs an initial signal to the node N1. In the compensation stage t2, the first gate driving signal terminal G1 outputs a high-level signal, the second gate driving signal terminal G2 outputs a low-level signal, the fourth transistor T4 and the second transistor T2 are turned on, and the data signal terminal Data outputs a driving signal to write a voltage Vdata+Vth (i.e., the sum of the voltage Vdata and Vth) to the node N1, where Vdata is the voltage of the driving signal and Vth is the threshold voltage of the driving transistor T3. In the second reset stage t3, the second reset signal terminal Re2 outputs a low-level signal, the seventh transistor T7 is turned on, and the second initial signal terminal Vinit2 inputs an initial signal to the second electrode of the sixth transistor T6. In the light-emitting stage t4, the light-emitting control signal terminal EM outputs a low-level signal, the sixth transistor T6 and the fifth transistor T5 are turned on, and the driving transistor T3 emits light under the action of the voltage Vdata+Vth stored in the storage capacitor C.

[0090] It should be noted that in the embodiments of the present disclosure, each pixel circuit can be a structure including other number of transistors, such as a 7T2C structure, a 6T1C structure, a 6T2C structure, an 8T1C structure, or a 9T2C structure, in addition to the 7T1C (i.e., seven transistors and one capacitor) structure shown in FIG. 3, and the embodiments of the present disclosure do not limit this.

[0091] For example, in the following embodiments, the pixel circuit is taken as an example of the 7T1C structure.

[0092] For example, the reflective structure 108 includes a first reflective film and a second reflective film which are stacked and arranged adjacently, and the refractive index of the first reflective film and the refractive index of the second reflective film are different, and the thickness of the first reflective film and the thickness of the second reflective film can also be different. In order to achieve a reflectivity of 99% and above for visible light, in general, the reflective structure has ten or more reflective films, the thickness of the reflective structure as a whole can reach 1 micrometer or more, and because the materials of the first reflective film and the second reflective film are different, at least the first reflective film and the second reflective film have different physical and chemical properties, when etching the first reflective film and the second reflective film using an etching material, the side surface of the reflective structure 108 formed by the first reflective film and the second reflective film will form a concave-convex structure. For example, FIG. 5 is a transmission electron microscope diagram of a reflective structure provided by at least one embodiment of the present disclosure, as shown in FIG. 5, the edge of the reflective structure 108 (shown by the dashed box in FIG. 5) is relatively steep, that is, the edge of the reflective structure 108 has a relatively large slope angle, and the edge of the reflective structure 108 is relatively rough, thereby forming a relatively large step difference between the top surface 1081 and the bottom surface 1082 of the reflective structure. In general, in order to achieve a relatively gentle extension of the metal material, the slope angle of the bottom structure located below the metal material needs to be less than 45°, and the ratio of the thickness of the metal material to the thickness of the bottom material needs to be greater than 1:10. In order to achieve the reflection ability of the sub-pixel for light to effectively improve the light effect, the thickness of the reflective structure 108 is generally greater than 1 micrometer, and the thickness of the anode formed on the reflective structure 108 is generally less than 40 nm, so that the thickness of the reflective structure 108 needs to be less than 0.4 micrometer. When the anode extends from the top of the reflective structure 108 located in the light emitting area along the side surface of the reflective structure 108 to the first source / drain electrode of the driving transistor and is connected with the first source / drain electrode, there is a relatively high risk of breaking of the anode, that is, there is a risk that the anode cannot be electrified. When the anode is broken, it will cause the light emitting diode display device in the display substrate to be unable to be lit, that is, a dark spot is formed.

[0093] The inventors of the present disclosure also notice that the anode of the light emitting element can be electrically connected to the first source-drain electrode of the driving transistor through an auxiliary electrode, the auxiliary electrode and the anode being two independent structures, the auxiliary electrode can have a greater thickness, a smaller thickness or the same thickness as the anode, the auxiliary electrode and the anode are formed in two different process steps, and the combined structure of the auxiliary electrode and the anode can reduce the size of the step difference that the anode passes through in the process step of forming the anode, thereby reducing the risk of the anode breaking.

[0094] For example, FIG. 6 is a schematic diagram of a cross-sectional structure of another display substrate provided by at least one embodiment of the present disclosure. The structure of the display substrate shown in FIG. 6 is different from the structure of the display substrate shown in FIG. 1 in that, in the display substrate shown in FIG. 6, the anode 107 of the light emitting element 106 is electrically connected to the first source-drain electrode of the driving transistor through an auxiliary electrode, thereby reducing the risk of the anode breaking.

[0095] For example, as shown in FIG. 6, the display substrate 100 further includes a first planarization layer 122 and a second planarization layer 123 which are stacked on the driving transistor 111. The reflective structure 108 is disposed on the first planarization layer 122, the anode 107 is disposed on the reflective structure 108, the auxiliary electrode 124 is electrically connected to the first source-drain electrode 1111 of the driving transistor 111 through the first via structure 125 disposed in the first planarization layer 122, and the anode 107 is electrically connected to the auxiliary electrode 124 through the second via structure 126 disposed in the second planarization layer 123, thereby achieving driving of the light emitting element 106 by the driving transistor 111 to light up the light emitting element 106, and reducing the risk of the anode 107 breaking by disposing the auxiliary electrode 124. Moreover, the auxiliary electrode 124 and the anode 107 are electrically connected through the second via structure 126 in the second planarization layer 123, thereby reducing the resistance of the anode 107.

[0096] For example, in one example, the material of the auxiliary electrode 124 includes a three-layer stacked structure of a first metal oxide layer, a silver metal layer and a second metal oxide layer, for example, the material of the auxiliary electrode 124 is ITO / Ag / ITO.

[0097] For example, as shown in FIG. 6, the auxiliary electrode 124 is used to realize the switching of the anode 107 and the corresponding conductive layer corresponding to the pixel circuit output point, which is limited within the sub-pixel corresponding to the anode, and is a kind of isolated pattern. In the gap of the isolated pattern, the auxiliary electrode 124 is used to form a low-voltage power supply voltage signal line or a high-voltage power supply voltage signal line, and such design can effectively reduce the voltage rise or voltage drop of the corresponding power supply signal.

[0098] For example, as shown in FIG. 6, the orthographic projection of the first via structure 125 on the substrate 101 and the orthographic projection of the second via structure 126 on the substrate 101 do not have overlapping parts, which can reduce the difficulty of forming the first via structure 125 and the second via structure 126.

[0099] For example, as shown in FIG. 6, the reflective structure 108 is disposed between the first planarization layer 122 and the second planarization layer 123, and the second planarization layer 123 covers part of the side surface and the surface away from the substrate 101 of the reflective structure 108. The embodiments of the present disclosure utilize the second planarization layer 123 to perform planarization processing on the edge of the reflective structure 108, which can effectively improve the risk of the anode 107 breaking at the edge of the reflective structure 108.

[0100] For example, as shown in FIG. 6, the part of the anode 107 in contact with the second planarization layer 123 has a stepped structure, which can make the anode reduce the step difference in the process of extending from the top of the reflective structure 108 in the light-emitting area along the side surface of the reflective structure 108 to the first source-drain electrode of the driving transistor and connecting with the first source-drain electrode, so as to reduce the risk of the anode breaking and avoid the phenomenon that the light-emitting diode display device included in the display substrate cannot be lit when the anode breaks.

[0101] For example, in the structure shown in FIG. 6, a spacer 129 is further disposed on the pixel definition layer 102, which can support the display substrate and the opposing substrate on which the light-emitting diode display device is formed.

[0102] For example, as shown in FIG. 6, the display substrate 100 includes: a substrate 101, a pixel definition layer 102 located on the substrate 101, the pixel definition layer 102 including a plurality of pixel openings 103 and a pixel spacing part 104 spacing the plurality of pixel openings 103; a plurality of sub-pixels 105 located on the substrate 101 and corresponding to the plurality of pixel openings 103 one by one, each sub-pixel 105 including a light-emitting element 106, the light-emitting element 106 including an anode 107, the anode 107 having a plurality of stepped structures in a plane perpendicular to the main surface of the substrate 101, which can make the anode more difficult to break during the process of forming the anode.

[0103] For example, as shown in FIG. 6, the reflective structure 108 has a first width in a first direction, the pixel opening 103 has a second width in the first direction, and the first width is greater than the second width, the first direction being a direction parallel to the main surface of the substrate, which can ensure that the reflective structure can completely correspond to the pixel opening.

[0104] It should be noted that the main surface of the substrate is the surface of the substrate on which the pixel definition layer, the light emitting element, and the reflective structure, etc. are formed.

[0105] For example, FIG. 7 is a schematic diagram of a planar structure of the display substrate shown in FIG. 6. As shown in FIGS. 6 and 7, the orthographic projections of the anode 107, the reflective structure 108, and the auxiliary electrode 124 on the substrate 101 are all within the orthographic projections of the first planarization layer 122 and the second planarization layer 123 on the substrate 101. The anode 107 covers the surface of the reflective structure 108 away from the substrate 101, and the second planarization layer 123 covers the side surface of the reflective structure 108. The first via structure 125 and the second via structure 126 are staggered with each other in the planar structure, so as to reduce the difficulty of forming the first via structure 125 and the second via structure 126. Although the planar shapes of the first via structure 125 and the second via structure 126 shown in FIG. 7 are both circular, the embodiments of the present disclosure are not limited thereto, and the planar shapes of the first via structure 125 and the second via structure 126 can also be rectangular, elliptical, etc., as long as stable electrical connections between the auxiliary electrode 124 and the first source-drain electrode 1111 of the driving transistor 111, and between the anode 107 and the auxiliary electrode 124 can be achieved.

[0106] For example, as shown in FIG. 7, the planar shapes of the light emitting element 106, the anode 107, and the reflective structure 108 are all hexagonal, the orthographic projection of the light emitting element 106 on the substrate is within the orthographic projection of the anode 107 on the substrate, and the orthographic projection of the anode 107 on the substrate is within the orthographic projection of the reflective structure 108 on the substrate. For example, in one example, the arrangement of the sub-pixels can be conventional diamond arrangement, delta arrangement, and triangle arrangement, etc.

[0107] For example, the display substrate with the reflection structure 108 can be prepared by using low temperature polysilicon technology. In the process of preparing the display substrate, the buffer layer 112, the active layer 1112, the gate insulating layer 1115, the gate 1114, the interlayer insulating layer and the source-drain electrode layer are sequentially formed on the substrate 101, then the first planarization layer 122 is formed on the source-drain electrode layer, the auxiliary electrode 124 is formed after the formation of the first planarization layer 122 and the first via structure 125 in the first planarization layer 122, the auxiliary electrode 124 is electrically connected with the pixel circuit output point of the corresponding source-drain electrode layer, i.e. the first source-drain electrode 1111 through the first via structure 125, then the reflection structure 108 is arranged at the position corresponding to the sub-pixel of the specific color which needs to form the reflection structure 108, or the reflection structure 108 is arranged at the positions corresponding to all the sub-pixels of different colors. For example, the reflectivity of the anode of the conventional structure to blue light is low, so the reflection structure 108 needs to be formed at the bottom of the blue light emitting element to improve the light emitting efficiency of the whole light emitting diode light emitting device. After the formation of the reflection structure 108, the second planarization layer 123 is formed on the reflection structure 108, the electrode contact hole 127 and the second via structure 126 are formed in the second planarization layer 123, the anode 107 is in contact with the reflection structure 108 through the electrode contact hole 127, and the second planarization layer 123 covers the side surface of the reflection structure 108, so the second planarization layer 123 needs to have a certain thickness to effectively cover the side surface of the reflection structure 108; then the anode is formed on the second planarization layer 123, and the anode 107 is electrically connected with the auxiliary electrode 124 through the second via structure 126 arranged in the second planarization layer 123, the pixel defining layer 102 is formed on the anode 107, the pixel opening 103 is formed in the pixel defining layer 102, and the light emitting element 106 is formed in the pixel opening 103, i.e. the corresponding sub-pixel is formed. The whole process of preparing the display substrate adopts the backplane process flow, so the process consistency of the display substrate can be improved.

[0108] For example, in the structure shown in FIG. 6, the drive transistor 111 is a top-gate thin film transistor, which includes the active layer 1112, the gate insulating layer 1115 arranged on the active layer 1112, the gate 1114 arranged on the gate insulating layer 1115, the interlayer insulating layer arranged on the gate 1114, the first source-drain electrode 1111 and the second source-drain electrode 1113 arranged on the interlayer insulating layer, and the interlayer insulating layer can electrically insulate the gate 1114, the first source-drain electrode 1111 and the second source-drain electrode 1113. For example, the first source-drain electrode 1111 is the drain electrode of the drive transistor 111, and the second source-drain electrode 1113 is the source electrode of the drive transistor 111, which can be electrically connected with the data line (not shown).

[0109] For example, in the structure shown in FIG. 6, a buffer layer 112 is further provided between the substrate 101 and the driving transistor 111, which can avoid damaging the substrate 101 when forming the layers of the driving transistor and the light emitting element on the substrate 101.

[0110] For example, in one example, the material of the anode 107 is a transparent metal oxide. For example, the transparent metal oxide is indium gallium zinc oxide, although only one sub-pixel is shown in FIG. 6, in fact, the display substrate includes a plurality of sub-pixels with different colors in the light emitting diode display device. For example, in one example, the anode 107 is defined as a red sub-pixel region, a green sub-pixel region and a blue sub-pixel region, and the material of the anode 107 is a transparent metal oxide, and the display substrate includes a bottom emission display device in the light emitting diode display device. For example, by providing the reflective structure 108, the transmittance of the anode 107 can reach 99%.

[0111] For example, in another example, the anode 107 includes a first conductive layer and a second conductive layer stacked, the material of the first conductive layer is a metal material with high reflectivity, and the material of the second conductive layer is a transparent conductive material. The material of the first conductive layer is at least one of aluminum and silver. The material of the second conductive layer is at least one of indium tin oxide and indium zinc oxide, and the anode formed by the three-layer stacked structure has smaller resistance.

[0112] For example, as shown in FIG. 6, in the direction perpendicular to the main surface of the substrate 101, the thickness of the part of the reflective structure 108 protruding from the first planarization layer 122 is less than 10 times the thickness of the anode 107, so as to reduce the risk of anode fracture when the anode 107 extends from the top of the reflective structure 108 located in the light emitting area along the side of the reflective structure 108 to the first source-drain electrode of the driving transistor and is connected with the first source-drain electrode.

[0113] For example, FIG. 8 is a schematic diagram of a cross-sectional structure of another display substrate provided by at least one embodiment of the present disclosure, as shown in FIG. 8, the plurality of sub-pixels 105 include a first color sub-pixel 1051, a second color sub-pixel 1052 and a third color sub-pixel 1053, the reflective structure 108 is only provided at the position corresponding to the first color sub-pixel 1051, and the reflective structure 108 is not provided at the positions corresponding to the second color sub-pixel 1052 and the third color sub-pixel 1053.

[0114] For example, as shown in FIG. 8, the anode 107 of the light emitting element 106 corresponding to the first color sub-pixel 1051 includes a first electrode end 1071 and a second electrode end 1072, the first electrode end 1071 is in contact with the reflective structure 108, and the second electrode end 1072 is electrically connected through the auxiliary electrode 124 and the corresponding first source-drain electrode 1111. Since the reflectivity of the anode of the conventional structure to blue light is low, a reflective structure 108 needs to be formed at the bottom of the blue light emitting element to improve the light emitting efficiency of the overall light emitting diode display device. The first color sub-pixel 1051 can be a blue sub-pixel, and the second color sub-pixel 1052 and the third color sub-pixel 1053 can be a red sub-pixel and a green sub-pixel, respectively. Of course, the embodiments of the present disclosure are not limited to this, and the first color sub-pixel 1051 can also be a red sub-pixel or a green sub-pixel.

[0115] For example, as shown in FIG. 8, the part of the anode 107 of the light emitting element of the first color sub-pixel 1051 in contact with the second planarization layer 123 has a stepped structure, i.e., a high-low undulating shape, and the part of the anode 107 of the light emitting element of the second color sub-pixel 1052 and the third color sub-pixel 1053 in contact with the second planarization layer 123 is not provided with a stepped structure. The stepped structure of the anode 107 of the first color sub-pixel 1051 can reduce the number of steps that the anode passes through during the process of extending from the top of the reflective structure 108 located in the light emitting area along the side of the reflective structure 108 to the first source-drain electrode of the driving transistor and connecting with the first source-drain electrode, so as to reduce the risk of anode breakage and avoid the phenomenon that the light emitting diode display device included in the display substrate cannot be lit when the anode breaks.

[0116] For example, other structures of the display substrate in FIG. 8 can refer to the related description of FIG. 6 above, which will not be repeated here.

[0117] For example, FIG. 9 is a schematic view of a cross-sectional structure of a display substrate provided by at least one embodiment of the present disclosure. As shown in FIG. 9, a plurality of sub-pixels 105 includes a first color sub-pixel 1051, a second color sub-pixel 1052, and a third color sub-pixel 1053. The reflective structure 108 corresponds to all the pixel openings 103, i.e., the reflective structure 108 is arranged at positions corresponding to the first color sub-pixel 1051, the second color sub-pixel 1052, and the third color sub-pixel 1053. The anode 107 of the light emitting element 106 corresponding to each sub-pixel 105 includes a first electrode end 1071 and a second electrode end 1072. The first electrode end 1071 is in contact with the reflective structure 108, and the second electrode end 1072 is electrically connected to the corresponding first source / drain electrode 1111 through the auxiliary electrode 124. The first color sub-pixel 1051, the second color sub-pixel 1052, and the third color sub-pixel 1053 can be a blue sub-pixel, a red sub-pixel, and a green sub-pixel, respectively, so that the light emitting efficiency of each color sub-pixel is improved, and the light emitting efficiency of the light emitting diode display device included in the display substrate is improved as a whole.

[0118] For example, as shown in FIG. 9, the part of the anode 107 of the light emitting element of the first color sub-pixel 1051, the second color sub-pixel 1052, and the third color sub-pixel 1053 in contact with the second planarization layer 123 has a stepped structure. The stepped structure of the anode 107 of the light emitting element corresponding to the first color sub-pixel 1051, the second color sub-pixel 1052, and the third color sub-pixel 1053 can reduce the number of steps that the anode passes through during the process of extending from the top of the reflective structure 108 in the light emitting area along the side of the reflective structure 108 to the first source / drain electrode of the driving transistor and connecting with the first source / drain electrode, so as to reduce the risk of anode breakage and avoid the phenomenon that the light emitting diode display device included in the display substrate cannot be lit when the anode breaks.

[0119] For example, as shown in FIG. 9, the bottom of all the light emitting elements is provided with the reflective structure 108. The material of the auxiliary electrode 124 can not be an ITO / Ag / ITO three-layer laminated structure, but can be a conventional conductive metal or an alloy thereof, such as a Ti / Al / Ti three-layer laminated structure. For example, the auxiliary electrode 124 can also be a metal such as Cu or Mo.

[0120] For example, in the structure shown in FIG. 9, the reflective structure 108 is island-shaped on the substrate 101 and only exists in the corresponding light emitting area.

[0121] For example, other structures of the display substrate in FIG. 9 can refer to the related descriptions of FIG. 6 above, which will not be repeated here.

[0122] For example, FIG. 10 is a schematic view of a cross-sectional structure of a display substrate provided by at least one embodiment of the present disclosure. As shown in FIG. 10, a plurality of sub-pixels 105 includes a first color sub-pixel 1051, a second color sub-pixel 1052, and a third color sub-pixel 1053. The reflective structure 108 corresponds to the first color sub-pixel 1051 and the second color sub-pixel 1052, but does not correspond to the third color sub-pixel 1053. That is, the reflective structure 108 is arranged at positions corresponding to the first color sub-pixel 1051 and the second color sub-pixel 1052. The anode 107 of the light emitting element 106 corresponding to the first color sub-pixel 1051 includes a first electrode end 1071 and a second electrode end 1072. The first electrode end 1071 is in contact with the reflective structure 108, and the second electrode end 1072 is electrically connected to the corresponding first source / drain electrode 1111 through the auxiliary electrode 124. The anode 107 of the light emitting element 106 corresponding to the second color sub-pixel 1052 includes a third electrode end 1073 and a fourth electrode end 1074. The third electrode end 1073 is in contact with the reflective structure 108, and the fourth electrode end 1074 is electrically connected to the corresponding first source / drain electrode 1111 through the auxiliary electrode 124.

[0123] For example, the first color sub-pixel 1051, the second color sub-pixel 1052, and the third color sub-pixel 1053 can be blue sub-pixels, red sub-pixels, and green sub-pixels, respectively. That is, the reflective structure 108 is arranged at positions corresponding to the blue sub-pixels and the red sub-pixels, so that the light emitting efficiency of the blue sub-pixels and the red sub-pixels can be improved, and the light emitting efficiency of the light emitting diode display device included in the display substrate can be improved as a whole. Of course, embodiments of the present disclosure are not limited thereto. For example, the first color sub-pixel 1051 can be a blue sub-pixel, the second color sub-pixel 1052 can be a green sub-pixel, and the third color sub-pixel 1053 can be a red sub-pixel.

[0124] For example, as shown in FIG. 10, the portion of the anode 107 of the light emitting element of the first color sub-pixel 1051 in contact with the second planarization layer 123 has a stepped structure, and the portion of the anode 107 of the light emitting element of the second color sub-pixel 1052 in contact with the second planarization layer 123 also has a stepped structure. The stepped structure of the anode 107 of the first color sub-pixel 1051 and the stepped structure of the anode 107 of the second color sub-pixel 1052 can reduce the number of steps that the anode passes through during the process of extending from the top of the reflective structure 108 located in the light emitting area along the side of the reflective structure 108 to the first source / drain electrode of the driving transistor and connecting with the first source / drain electrode, so as to reduce the risk of anode breakage and avoid the phenomenon that the light emitting diode display device included in the display substrate cannot be lit when the anode breaks.

[0125] For example, as shown in FIG. 10, in one example, the reflective structure 108 is only provided at positions corresponding to the green light emitting element and the blue light emitting element, at positions corresponding to the red light emitting element, the anode adopts a three-layer structure of ITO / Ag / ITO, which has high reflectivity to red light, and the reflective structure 108 can not be provided at positions corresponding to the red light emitting element, and the light output can be high.

[0126] For example, other structures of the display substrate in FIG. 10 can refer to the related description of FIG. 6 above, and will not be described here.

[0127] For example, in the structures of the display substrate shown in FIGS. 1-2 and 6-10, the reflective structure 108 is an island structure, that is, the whole reflective structure film layer is subjected to a patterning process to form a plurality of reflective structures spaced from each other, and the material of the reflective structure film layer in the peripheral region is removed, so that the reflective structure 108 is an array of a plurality of independent structures.

[0128] For example, FIG. 11 is a schematic diagram of a cross-sectional structure of another display substrate provided by at least one embodiment of the present disclosure, as shown in FIG. 11, the plurality of sub-pixels 105 include a first color sub-pixel 1051, a second color sub-pixel 1052 and a third color sub-pixel 1053, the reflective structure 108 corresponds to all the pixel openings 103, that is, the reflective structure 108 is provided at positions corresponding to the first color sub-pixel 1051, the second color sub-pixel 1052 and the third color sub-pixel 1053. The anode 107 of the light emitting element 106 corresponding to each sub-pixel 105 includes a first electrode end 1071 and a second electrode end 1072, the first electrode end 1071 is in contact with the reflective structure 108, and the second electrode end 1072 is electrically connected to the corresponding first source / drain electrode 1111 through the auxiliary electrode 124. The first color sub-pixel 1051, the second color sub-pixel 1052 and the third color sub-pixel 1053 can be blue sub-pixels, red sub-pixels and green sub-pixels respectively, so that the light emitting efficiency of each color sub-pixel is improved, and the light emitting efficiency of the light emitting diode display device included in the display substrate can be improved as a whole.

[0129] For example, as shown in FIG. 11, the part of the anode 107 of the light emitting element of the first color sub-pixel 1051, the second color sub-pixel 1052 and the third color sub-pixel 1053 which is in contact with the second planarization layer 123 has a stepped structure, the stepped structure of the anode 107 of the light emitting element corresponding to the first color sub-pixel 1051, the second color sub-pixel 1052 and the third color sub-pixel 1053 can make the anode reduce the step difference in the process of extending from the top of the reflection structure 108 in the light emitting area along the side of the reflection structure 108 to the first source-drain electrode of the driving transistor and connecting with the first source-drain electrode, so as to reduce the risk of anode fracture and avoid the phenomenon that the light emitting diode display device included in the display substrate cannot be lighted up when the anode is fractured.

[0130] For example, as shown in FIG. 11, each reflection structure 108 is electrically connected with the anode 107 corresponding to one of the two adjacent sub-pixels and the auxiliary electrode 124 corresponding to the other of the two adjacent sub-pixels. The electrical connection between each reflection structure 108 and the anode 107 corresponding to one of the two adjacent sub-pixels can improve the utilization efficiency of the light emitted by the light emitting element in the sub-pixel. The electrical connection between each reflection structure 108 and the auxiliary electrode 124 corresponding to the other of the two adjacent sub-pixels can reduce the resistance of the auxiliary electrode 124 connected therewith, so as to further reduce the resistance of the anode 107 electrically connected with the auxiliary electrode 124.

[0131] For example, as shown in FIG. 11, the anode 107 includes a first sub-anode 107a in contact with the auxiliary electrode 124 and a second sub-anode 107b spaced apart from the auxiliary electrode 124, and the second sub-anode 107b at least partially overlaps the first sub-anode 107a. For example, a third planarization layer 128 is arranged between the second sub-anode 107b and the first sub-anode 107a, and the second sub-anode 107b is electrically connected with the first sub-anode 107a through a third via structure 135 arranged in the third planarization layer 128. By arranging the anode as the electrically connected first sub-anode 107a and second sub-anode 107b, the resistance of the anode 107 can be reduced.

[0132] For example, in the structure shown in FIG. 11, in one example, the first color sub-pixel 1051, the second color sub-pixel 1052 and the third color sub-pixel 1053 can be blue sub-pixels, red sub-pixels and green sub-pixels respectively. The blue light emitting element corresponding to the first color sub-pixel 1051 includes one end of the second sub-anode 107b as the first electrode end 1071 of the anode 107, one end of the first sub-anode 107a as the second electrode end 1072 of the anode 107, the first electrode end 1071 in contact with the reflective structure 108, and the second electrode end 1072 electrically connected through the auxiliary electrode 124 and the corresponding first source-drain electrode 1111. The red light emitting element and the green light emitting element corresponding to the second color sub-pixel 1052 and the third color sub-pixel 1053 include one end of the first sub-anode 107a as the first electrode end 1071 of the anode 107, the other end of the first sub-anode 107a as the second electrode end 1072 of the anode 107, the first electrode end 1071 in contact with the reflective structure 108, and the second electrode end 1072 electrically connected through the auxiliary electrode 124 and the corresponding first source-drain electrode 1111.

[0133] For example, in the display substrate shown in FIG. 11, after forming each film layer of the reflective structure, a via structure connecting the anode and the auxiliary electrode is formed by hole digging processing on each film layer of the reflective structure, and the material of each film layer of the reflective structure remaining in the peripheral area of the display area is connected as an integral structure, and the plurality of reflective structures 108 are arranged in an array.

[0134] For example, in the cross-sectional structure diagram of the display substrate shown in FIG. 11, the area of the film layer etched to form the reflective structure 108 is significantly reduced.

[0135] For example, in the structure shown in FIG. 11, after the film layer of the first source-drain electrode 1111 of the driving transistor 111 is formed, the first planarization layer 122 is first formed, which can improve the step of the first source-drain electrode 1111 and the following film layer, thereby improving the flatness of the formed structure of the display substrate, then the auxiliary electrode 124 is formed, which is electrically connected with the pixel circuit output point of the corresponding source-drain electrode layer, i.e. the first source-drain electrode 1111 through the first via structure 125. In addition, the auxiliary electrode 124 can also form a low power voltage signal line and transmit current, which is used to reduce the voltage drop of the current signal line of the display substrate and improve the uniformity of the display brightness of the subsequently formed display panel. Then the reflection structure 108 is formed. The second planarization layer 123 completely wraps the edge of the reflection structure 108, which is used to improve the roughness of the edge of the reflection structure 108 to avoid the risk of anode fracture caused by the formation of a larger slope angle of the reflection structure 108. The second planarization layer 123 at the position corresponding to the light emitting element needs to be removed, and at the position corresponding to the second via structure 126, the film layer of the reflection structure 108 and the second planarization layer 123 are etched at the same time, and the size of the hole formed by the film layer of the reflection structure 108 is larger.

[0136] For example, other structures of the display substrate in FIG. 11 can refer to the related description of FIG. 6 above, which will not be repeated here.

[0137] For example, FIG. 12 is a schematic view of a cross-sectional structure of a peripheral region of the display substrate shown in FIG. 11. As shown in FIG. 12, a buffer layer 112 is disposed on a substrate 101, a conductive layer 140 is disposed on the buffer layer 112, the conductive layer 140 is a layer on which a first source / drain electrode 1111 and a second source / drain electrode 1113 included in a driving transistor in a display region are disposed, and the conductive layer 140 further includes a power voltage signal line 141, a GOA circuit structure 142, and an initialization signal line 143. A first planarization layer 122 is disposed on the conductive layer 140, an auxiliary electrode 124 is disposed on the first planarization layer 122, a reflective structure 108 (a portion remaining in the peripheral region) is disposed on the auxiliary electrode 124, a second planarization layer 123 is disposed on the reflective structure 108, a second via structure 126 is formed in the second planarization layer 123, and an anode 107 is electrically connected to the auxiliary electrode 124 through the second via structure 126 disposed in the second planarization layer 123. Since the second planarization layer 123 generally contains water and oxygen, etc., the water and oxygen in the second planarization layer 123 are released in a subsequent high-temperature process of forming the anode 107, etc. The water and oxygen in the second planarization layer 123 are more easily released by forming a release hole in the anode 107 in a process of forming the anode 107, and then filling the release hole with a pixel definition layer 102 or a spacer 129 formed subsequently. The pixel definition layer 102 is disposed on the anode 107, the spacer 129 and a cathode 147 are disposed on the pixel definition layer 102, and the cathode 147 and the anode 107 are electrically connected in the peripheral region. An encapsulation structure is disposed on the spacer 129, and the encapsulation structure includes a first inorganic encapsulation layer 144, an organic encapsulation layer 145, and a second inorganic encapsulation layer 146 which are sequentially stacked, and the stacked encapsulation structure can prevent external moisture from entering a light-emitting layer of each light-emitting element. For example, the buffer layer 112 is generally formed of an inorganic material, and the buffer layer 112 is prone to internal shrinkage in a heating process. The second planarization layer 123 remaining in the peripheral region can be penetrated to a surface of the substrate 101, thereby preventing the internal shrinkage of the buffer layer 112.

[0138] For example, in one example, the cathode 147 has a mesh structure, and the mesh structure can reduce the resistance of the cathode 147.

[0139] For example, in one example, the cathode 147 includes a stacked structure of a molybdenum metal layer, a copper metal layer, a titanium metal layer, an aluminum metal layer, and a titanium metal layer, or a stacked structure of an indium tin oxide layer, a silver metal layer, and an indium tin oxide layer, and the cathode 147 formed of the multi-layer stacked structure can further reduce the resistance of the cathode.

[0140] For example, in the cross-sectional structure diagram shown in FIG. 12, the second planarization layer 123 wraps the edges of the reflective structure 108, which can reduce the step difference, thereby reducing the risk of anode fracture at the edges of the reflective structure 108.

[0141] For example, the material of the reflective structure 108 remaining at the edge of the display substrate 100 can block the invasion of water and oxygen to the position where the light emitting element is located, thereby improving the reliability of the display substrate.

[0142] For example, FIG. 13 is a cross-sectional structure diagram of another display substrate provided by at least one embodiment of the present disclosure, as shown in FIG. 13, the plurality of sub-pixels 105 include a first color sub-pixel 1051, a second color sub-pixel 1052 and a third color sub-pixel 1053, and the reflective structure 108 and all the pixel openings 103 correspond, that is, the reflective structure 108 is provided at the positions corresponding to the first color sub-pixel 1051, the second color sub-pixel 1052 and the third color sub-pixel 1053. The anode 107 of the light emitting element 106 corresponding to each sub-pixel 105 includes a first electrode end 1071 and a second electrode end 1072, the first electrode end 1071 contacts the reflective structure 108, and the second electrode end 1072 is electrically connected through the auxiliary electrode 124 and the corresponding first source-drain electrode 1111. The first color sub-pixel 1051, the second color sub-pixel 1052 and the third color sub-pixel 1053 can be blue sub-pixels, red sub-pixels and green sub-pixels respectively, so as to improve the light emitting efficiency of each color sub-pixel, and further improve the light emitting efficiency of the light emitting diode display device included in the display substrate as a whole.

[0143] For example, as shown in FIG. 13, the part of the anode 107 of the light emitting element of the first color sub-pixel 1051, the second color sub-pixel 1052 and the third color sub-pixel 1053 contacting the second planarization layer 123 all has a stepped structure, and the stepped structure of the anode 107 of the light emitting element corresponding to the first color sub-pixel 1051, the second color sub-pixel 1052 and the third color sub-pixel 1053 can reduce the step difference in the process of extending from the top of the reflective structure 108 located in the light emitting area along the side of the reflective structure 108 to the first source-drain electrode of the driving transistor and connecting with the first source-drain electrode, so as to reduce the risk of anode fracture and avoid the phenomenon that the light emitting diode display device included in the display substrate cannot be lit when the anode is fractured.

[0144] For example, as shown in FIG. 13, each reflective structure 108 is electrically connected to the anode 107 corresponding to one of the two adjacent sub-pixels and the auxiliary electrode 124 corresponding to the other of the two adjacent sub-pixels. The electrical connection of each reflective structure 108 to the anode 107 corresponding to one of the two adjacent sub-pixels can improve the utilization efficiency of the light emitted by the light emitting element in the sub-pixel. The electrical connection of each reflective structure 108 to the auxiliary electrode 124 corresponding to the other of the two adjacent sub-pixels can reduce the resistance of the auxiliary electrode 124, thereby further reducing the resistance of the anode 107 electrically connected to the auxiliary electrode 124.

[0145] For example, as shown in FIG. 13, each anode 107 includes a first sub-anode 107a in contact with the auxiliary electrode 124 and a second sub-anode 107b spaced apart from the auxiliary electrode 124, the second sub-anode 107b covering the surface and side surface of the first sub-anode 107a away from the substrate 101, so that the second sub-anode 107b can protect the first sub-anode 107a from being damaged in the patterning process, while also reducing the resistance of the anode 107.

[0146] For example, in the structure shown in FIG. 13, in one example, the first color sub-pixel 1051, the second color sub-pixel 1052 and the third color sub-pixel 1053 can be blue sub-pixels, red sub-pixels and green sub-pixels, respectively. The blue light emitting element corresponding to the first color sub-pixel 1051 includes a second sub-anode 107b having one end as a first electrode end 1071 of the anode 107, and a first sub-anode 107a having one end as a second electrode end 1072 of the anode 107, the first electrode end 1071 being in contact with the reflective structure 108, and the second electrode end 1072 being electrically connected to the corresponding first source-drain electrode 1111 through the auxiliary electrode 124. The red light emitting element and the green light emitting element corresponding to the second color sub-pixel 1052 and the third color sub-pixel 1053 include a first sub-anode 107a having one end as a first electrode end 1071 of the anode 107 and the other end as a second electrode end 1072 of the anode 107, the first electrode end 1071 being in contact with the reflective structure 108, and the second electrode end 1072 being electrically connected to the corresponding first source-drain electrode 1111 through the auxiliary electrode 124.

[0147] For example, in the display substrate shown in FIG. 13, after forming each film layer of the reflective structure, a via structure for connecting the anode and the auxiliary electrode is formed by hole digging processing on each film layer of the reflective structure, and the material of each film layer of the reflective structure remaining in the peripheral region of the display region is reserved.

[0148] For example, in the cross-sectional structure schematic diagram of the display substrate shown in FIG. 13, the area of the film layer of the reflection structure 108 subjected to etching is significantly reduced.

[0149] For example, in the structure shown in FIG. 13, after the film layer of the first source-drain electrode 1111 of the driving transistor 111 is formed, the first planarization layer 122 is first formed, which can improve the step difference of the first source-drain electrode 1111 and the following film layers, thereby improving the planarity of the formed structure of the display substrate, and then the auxiliary electrode 124 is formed, which is electrically connected with the pixel circuit output point of the corresponding source-drain electrode layer, i.e., the first source-drain electrode 1111 through the first via structure 125. In addition, the auxiliary electrode 124 can also form a low power voltage signal line and transmit current, which is used to reduce the voltage drop of the current signal line of the display substrate and improve the uniformity of the display brightness of the subsequently formed display panel. Then the reflection structure 108 is formed. The second planarization layer 123 completely wraps the edge of the reflection structure 108, which is used to improve the roughness of the edge of the reflection structure 108 to avoid the risk of anode fracture caused by the formation of a larger slope angle of the reflection structure 108. The second planarization layer 123 at the position corresponding to the light-emitting element needs to be removed, and at the position corresponding to the second via structure 126, the film layer of the reflection structure 108 and the second planarization layer 123 are etched at the same time, and the size of the hole formed by the film layer of the reflection structure 108 is larger.

[0150] For example, FIG. 14 is a cross-sectional structure schematic diagram of another display substrate provided by at least one embodiment of the present disclosure, as shown in FIG. 14, the display substrate 100 further includes a fourth planarization layer 130 disposed on the driving transistor 111, the fourth planarization layer 130 is provided with a groove structure 131, a first part 1081 of the reflection structure 108 is disposed in the groove structure 131, and a second part 1082 of the reflection structure 108 protrudes from the fourth planarization layer 130 and is disposed on the side of the first part 1081 away from the substrate 101. In this way, the distance between the surface of the reflection structure 108 farthest away from the substrate 101 and the surface of the fourth planarization layer 130 farthest away from the substrate 101 can be reduced, so that the step difference caused by the reflection structure 108 can be reduced, so that the anode 107 can reduce the step difference in the process of extending from the top of the reflection structure 108 located in the light-emitting area along the side surface of the reflection structure 108 to the first source-drain electrode 1111 of the driving transistor 111 and connecting with the first source-drain electrode 1111, so as to reduce the risk of anode fracture and avoid the phenomenon that the light-emitting diode display device included in the display substrate cannot be lighted up when the anode is fractured.

[0151] For example, as shown in FIG. 14, a part of the reflective structure 108 is arranged in the fourth planarization layer 130, and another part protrudes out of the fourth planarization layer 130. The anode 107 is arranged on the reflective structure 108, and the anode 107 is directly electrically connected to the first source-drain electrode 1111 of the driving transistor 111 through the via structure 110 arranged in the fourth planarization layer 130, so as to realize driving of the light emitting element 106 by the driving transistor 111 to light up the light emitting element 106. That is, the display substrate does not include an auxiliary electrode, and the anode 107 is directly electrically connected to the first source-drain electrode 1111 of the driving transistor 111 without switching, which can reduce the risk of anode fracture due to a small enough step.

[0152] For example, as shown in FIG. 14, the orthographic projection of the reflective structure 108 on the substrate 101 covers the orthographic projection of the pixel opening 103 corresponding thereto on the substrate 101, that is, the orthographic projection of the pixel opening 103 corresponding to the reflective structure 108 on the substrate 101 is located within the orthographic projection of the reflective structure 108 on the substrate 101, so that the light emitted from the light emitting element of the corresponding sub-pixel can be reflected by the reflective structure 108, thereby maximizing the light emitting efficiency of the organic light emitting diode display device included in the display substrate through the reflective structure 108.

[0153] For example, as shown in FIG. 14, in a direction perpendicular to the main surface of the substrate 101, the depth of the groove structure 131 is less than or equal to the thickness of the fourth planarization layer 130, so that the groove structure 131 does not penetrate through the fourth planarization layer 130, so that the groove structure 131 can be stably formed in the fourth planarization layer 130.

[0154] For example, as shown in FIG. 14, the first part 1081 of the reflective structure 108 is arranged in the groove structure 131, and the thickness of the second part 1082 of the reflective structure 108 exposed above the fourth planarization layer 130 is reduced, so that the risk of anode fracture caused by the step can be significantly reduced when the anode 107 covers the edge of the reflective structure 108. In addition, the groove structure 131 arranged in the fourth planarization layer 130 needs to ensure the planarity of the surface of the fourth planarization layer 130 in contact with the reflective structure 108. There is no metal pattern and via structure on the surface of the fourth planarization layer 130 in contact with the reflective structure 108, which can ensure the planarity of the reflective structure 108 and improve the light efficiency.

[0155] For example, in one example, the thickness of the anode is 40 nm, the thickness of the reflective structure 108 is 1 micron, the depth of the recess structure 131 of the fourth planarization layer 130 needs to be higher than 0.6 micron, and the thickness of the second part 1082 of the reflective structure 108 exposed above the fourth planarization layer 130 needs to be less than 0.4 micron. In addition, a part of the fourth planarization layer 130 needs to be reserved at the position corresponding to the recess structure 131, for example, the thickness of the reserved fourth planarization layer 130 is 0.4 micron, and the overall thickness of the fourth planarization layer 130 needs to be greater than 1 micron. For example, the thickness of the fourth planarization layer 130 is 1 micron to 2 microns.

[0156] For example, as shown in FIG. 14, the anode 107 included in the light emitting element 106 includes a first end portion 1071 and a second end portion 1072, the first end portion 1071 is in contact with the reflective structure 108, and the second end portion 1072 is in contact with and electrically connected to the first source-drain electrode 1111, the first end portion 1071, the second end portion 1072, and the middle portion of the anode 107 are an integral structure, that is, only one process step is needed to form the anode, and no auxiliary electrode is needed.

[0157] For example, as shown in FIG. 14, the fourth planarization layer 130 covers the side surface of the first part 1081 of the reflective structure 108, and the anode 107 of the light emitting element 106 covers the side surface and the surface away from the substrate substrate 101 of the second part 1082 of the reflective structure 108.

[0158] For example, as shown in FIG. 14, in the direction perpendicular to the main surface of the substrate substrate 101, the thickness of the second part 1082 of the reflective structure 108 is less than 10 times the thickness of the anode 107, which can effectively improve the risk of the anode 107 breaking at the edge of the reflective structure 108.

[0159] For example, FIG. 15 is a schematic view of a cross-sectional structure of a display substrate according to another embodiment of the present disclosure. As shown in FIG. 15, the display substrate 100 further includes a fourth planarization layer 130 disposed on the driving transistor 111, and the fourth planarization layer 130 includes a groove structure 131, and a first portion 1081 of the reflective structure 108 is disposed in the groove structure 131, and a second portion 1082 of the reflective structure 108 protrudes out of the fourth planarization layer 130 and is disposed on a side of the first portion 1081 away from the substrate 101. In this way, the distance between the surface of the reflective structure 108 farthest away from the substrate 101 and the surface of the fourth planarization layer 130 farthest away from the substrate 101 can be reduced, so that the step caused by the reflective structure 108 can be reduced, and the process of the anode 107 extending along the side surface of the reflective structure 108 to the first source / drain electrode 1111 of the driving transistor 111 and being connected to the first source / drain electrode 1111 can be facilitated, so that the risk of the anode 107 being broken can be reduced, and the phenomenon that the light-emitting diode display device included in the display substrate cannot be lit due to the anode 107 being broken can be avoided.

[0160] For example, as shown in FIG. 15, a portion of the reflective structure 108 is disposed in the fourth planarization layer 130, and another portion protrudes out of the fourth planarization layer 130 and is disposed outside the fourth planarization layer 130, and the anode 107 is disposed on the reflective structure 108, and the anode 107 is directly and electrically connected to the first source / drain electrode 1111 of the driving transistor 111 through the via structure 110 disposed in the fourth planarization layer 130, so that the driving transistor 111 can drive the light-emitting element 106 to light up the light-emitting element 106, that is, the display substrate does not include an auxiliary electrode, and the anode 107 is directly and electrically connected to the first source / drain electrode 1111 of the driving transistor 111 without being connected through an adapter, and the risk of the anode 107 being broken can be reduced due to the small step.

[0161] For example, as shown in FIG. 15, the orthographic projection of the reflective structure 108 on the substrate 101 covers the orthographic projection of the pixel opening 103 corresponding to the reflective structure 108 on the substrate 101, that is, the orthographic projection of the pixel opening 103 corresponding to the reflective structure 108 on the substrate 101 is located within the orthographic projection of the reflective structure 108 on the substrate 101, so that the light emitted from the light-emitting element of the corresponding sub-pixel can be reflected by the reflective structure 108, and the light-emitting efficiency of the organic light-emitting diode display device included in the display substrate can be maximally improved through the reflective structure 108.

[0162] For example, as shown in FIG. 15, the depth of the groove structure 131 is equal to the thickness of the fourth planarization layer 130 in the direction perpendicular to the main surface of the substrate 101, so that the groove structure 131 can penetrate through the fourth planarization layer 130, so that the thickness of the reflective structure 108 formed in the groove structure 131 is large enough to ensure sufficient reflection of the light rays emitted from the sub-pixel.

[0163] For example, as shown in FIG. 15, the first part 1081 of the reflective structure 108 is disposed in the groove structure 131, and the thickness of the second part 1082 of the reflective structure 108 exposed above the fourth planarization layer 130 is reduced, so that the risk of anode breakage caused by the step difference can be significantly reduced when the anode 107 covers the edge of the reflective structure 108. In addition, the groove structure 131 disposed in the fourth planarization layer 130 needs to ensure the planarity of the surface of the fourth planarization layer 130 in contact with the reflective structure 108. In the surface of the fourth planarization layer 130 in contact with the reflective structure 108, there is no metal pattern and via structure, etc., and such design can ensure the planarity of the reflective structure 108 and improve the light efficiency.

[0164] For example, the structure design of the display substrate shown in FIG. 15 is adopted, so that the position of the first part 1081 of the reflective structure 108 in the groove structure 131 of the fourth planarization layer 130 can be further reduced, so that the thickness of the second part 1082 of the reflective structure 108 protruding out of the fourth planarization layer 130 is further reduced, and the risk of anode breakage caused by the step difference can be significantly reduced when the anode 107 covers the edge of the reflective structure 108.

[0165] For example, in one example, the thickness of the anode is 40 nanometers, and the thickness of the reflective structure 108 is 1 micrometer, so the depth of the groove structure 131 in the fourth planarization layer 130 needs to be higher than 0.6 micrometers. In addition, it is necessary to ensure that a part of the reflective structure 108 protrudes out of the fourth planarization layer 130, so the thickness of the fourth planarization layer 130 needs to be less than the thickness of the reflective structure 108, and the thickness of the fourth planarization layer 130 needs to be greater than 0.6 micrometers and less than 1 micrometer, for example, the thickness of the fourth planarization layer 130 is 0.6 micrometers to 0.8 micrometers. For the peripheral region of the display region, the thickness of the fourth planarization layer 130 also needs to be designed in the above numerical range.

[0166] For example, in the structure of the display substrate shown in FIG. 14 and FIG. 15, the reflective structure 108 is an island structure, that is, the entire reflective structure film layer is subjected to a patterning process to form a plurality of reflective structures spaced apart from each other, and the material of the reflective structure film layer in the peripheral region is removed.

[0167] For example, as shown in FIG. 15, in a direction perpendicular to the main surface of the substrate substrate 101, the distance between the surface away from the substrate substrate 101 of the reflective structure 108 to the substrate substrate 101 is less than the distance between the surface away from the substrate substrate 101 of the fourth planar layer 130 to the substrate substrate 101.

[0168] The display device 200 such as includes a small and medium-sized electronic device such as a tablet computer, a smart phone, a head-mounted display, a car navigation unit, a camera, a center information display (CID) provided in a vehicle, a watch-type electronic device or other wearable device, a personal digital assistant (PDA), a portable multimedia player (PMP), and a game console, and a large and medium-sized electronic device such as a television, an outdoor billboard, a monitor, a household appliance including a display screen, a personal computer, and a laptop computer, a transparent display device, and an organic optoelectronic sensor device having a display function. The electronic device as described above can represent a mere example for applying the display device, and thus a person of ordinary skill in the art can recognize that the display panel can also be applied to any other electronic device having a display function without departing from the spirit and scope of the present disclosure.

[0169] The display substrate provided by the preparation method of the display substrate according to the embodiments of the present disclosure, at least a part of the sub-pixels are provided with the reflective structure, which can improve the light-emitting efficiency of the organic light-emitting diode display device included in the display substrate as a whole, thereby reducing the power consumption and improving the service life of the organic light-emitting diode display device included in the display substrate.

[0170] For example, FIG. 17 is a flowchart of a preparation method of a display substrate according to at least one of the embodiments of the present disclosure, as shown in FIG. 17, the preparation method includes the following steps.

[0171] Step S101: providing a substrate substrate.

[0172] For example, the substrate substrate can be a glass substrate, a quartz substrate, or a flexible display substrate, etc., and the embodiments of the present disclosure do not limit this.

[0173] Step S102: forming a pixel defining layer on the substrate, wherein the pixel defining layer comprises a plurality of pixel openings and a pixel spacing portion spacing the plurality of pixel openings.

[0174] For example, forming the pixel defining layer comprises shielding the pixel defining film from exposure using a mask plate. For example, in one example, different exposure amounts can be used for different positions of the pixel defining layer to achieve the formation of different pixel openings in the pixel defining layer using a photolithography process.

[0175] For example, the pixel defining layer can be formed using an inorganic insulating material, such as silicon nitride or silicon oxide.

[0176] Step S103: forming a sub-pixel corresponding to each pixel opening in the plurality of pixel openings, wherein each sub-pixel comprises a light emitting element comprising an anode.

[0177] For example, the array of pixel units are formed on the substrate, each pixel unit comprises a plurality of sub-pixels emitting different color light, each sub-pixel comprises a light emitting element and a pixel driving circuit driving the corresponding light emitting element to emit light.

[0178] For example, each pixel unit corresponds to a first color opening region, a second color opening region and a third color opening region in sequence, i.e. corresponding to three adjacent pixel openings.

[0179] Step S104: forming a reflection structure in contact with the anode on the side of the anode close to the substrate, wherein the reflection structure corresponds to at least part of the pixel openings.

[0180] For example, in one example, the reflection structure comprises a first reflection film and a second reflection film stacked and arranged adjacent to each other, and the refractive index of the first reflection film and the refractive index of the second reflection film are different, and the thickness of the first reflection film and the thickness of the second reflection film can also be different. In order to achieve a reflectivity of 99% and above for visible light, in general, the reflection structure has more than ten reflection films, the thickness of the reflection structure as a whole can reach more than 1 microns, and since the materials of the first reflection film and the second reflection film are different, at least the first reflection film and the second reflection film have different physical and chemical properties, when etching the first reflection film and the second reflection film using an etching material, the side surface of the reflection structure 108 formed by the first reflection film and the second reflection film will form a concave-convex structure.

[0181] For example, the preparation method provided by at least one of the embodiments of the present disclosure further includes forming a driving transistor for driving the light-emitting element to emit light on the substrate substrate, wherein the anode of the light-emitting element is electrically connected to the first source-drain electrode of the driving transistor through the auxiliary electrode, thereby reducing the risk of fracture of the anode.

[0182] For example, the preparation method provided by at least one of the embodiments of the present disclosure further includes sequentially forming a first planarization layer and a second planarization layer on the driving transistor, the auxiliary electrode is electrically connected to the first source-drain electrode through the first via structure arranged in the first planarization layer, and the anode is electrically connected to the auxiliary electrode through the second via structure arranged in the second planarization layer, thereby achieving the driving of the light-emitting element by the driving transistor to light up the light-emitting element, and reducing the risk of fracture of the anode by forming the auxiliary electrode. Moreover, the auxiliary electrode and the anode are electrically connected through the second via structure in the second planarization layer, thereby reducing the resistance of the anode.

[0183] For example, in the preparation method provided by at least one of the embodiments of the present disclosure, the orthographic projection of the first via structure on the substrate substrate and the orthographic projection of the second via structure on the substrate substrate do not have an overlapping part, which can reduce the difficulty of forming the first via structure and the second via structure.

[0184] For example, the preparation method provided by at least one of the embodiments of the present disclosure further includes forming a fourth planarization layer on the driving transistor, and forming a groove structure in the fourth planarization layer, the first part of the reflection structure is formed in the groove structure, and the second part of the reflection structure protrudes out of the fourth planarization layer and is formed on the side of the first part away from the substrate substrate, thereby reducing the distance between the surface of the reflection structure farthest away from the substrate substrate and the surface of the fourth planarization layer away from the substrate substrate, thereby reducing the step caused by the reflection structure, so that the anode extends along the side surface of the reflection structure to the first source-drain electrode of the driving transistor and is connected to the first source-drain electrode during the process of extending from the top of the reflection structure in the light-emitting area to the first source-drain electrode of the driving transistor, thereby reducing the risk of fracture of the anode and avoiding the phenomenon that the light-emitting diode display device included in the display substrate cannot be lighted up when the anode is fractured.

[0185] For example, in the preparation method provided by at least one of the embodiments of the present disclosure, in the direction perpendicular to the main surface of the substrate substrate, the depth of the groove structure is less than or equal to the thickness of the fourth planarization layer, thereby preventing the groove structure from penetrating through the fourth planarization layer, so that the groove structure can be stably formed in the fourth planarization layer.

[0186] For example, the preparation method provided by at least one embodiment of the present disclosure further includes forming a driving transistor for driving the light-emitting element to emit light on the substrate, and the anode of the light-emitting element is in contact with and electrically connected to the first source-drain electrode of the driving transistor, so that the driving transistor can drive the light-emitting element to light up the light-emitting element, that is, the display substrate does not include an auxiliary electrode, and the anode is directly electrically connected to the first source-drain electrode of the driving transistor without switching, and this design can also reduce the risk of anode fracture due to a small enough step.

[0187] The display substrate, the display device and the preparation method of the display substrate provided by at least one embodiment of the present disclosure have at least one of the following beneficial technical effects:

[0188] (1) The display substrate provided by at least one embodiment of the present disclosure is provided with a reflection structure at a position corresponding to at least part of a sub-pixel, which can improve the light-emitting efficiency of the organic display substrate, thereby reducing power consumption and improving the service life of the display substrate.

[0189] (2) The display substrate provided by at least one embodiment of the present disclosure is electrically connected between the anode of the light-emitting element and the first source-drain electrode of the driving transistor through the auxiliary electrode, thereby reducing the risk of anode fracture.

[0190] (3) The display substrate provided by at least one embodiment of the present disclosure is provided with a reflection structure between the first planarization layer and the second planarization layer, and the second planarization layer covers part of the side surface of the reflection structure and the surface away from the substrate, so that the edge of the reflection structure can be planarized by the second planarization layer, thereby effectively improving the risk of anode fracture at the edge of the reflection structure.

[0191] The following points need to be explained:

[0192] (1) The drawings of the embodiments of the present disclosure only involve the structures involved in the embodiments of the present disclosure, and other structures can be referred to the general design.

[0193] (2) For the sake of clarity, the thickness of the layer or region is magnified or reduced in the drawings used to describe the embodiments of the present disclosure, that is, the drawings are not drawn according to the actual proportion.

[0194] (3) In the case of no conflict, the embodiments of the present disclosure and the features in the embodiments can be combined with each other to obtain new embodiments.

[0195] The above is only a specific embodiment of the present disclosure, but the protection scope of the present disclosure is not limited thereto, and the protection scope of the present disclosure should be subject to the protection scope of the claims.

Claims

1. A display substrate, comprising: a substrate substrate; a pixel definition layer on the substrate substrate, comprising a plurality of pixel openings and pixel separation portions separating the plurality of pixel openings; a plurality of sub-pixels on the substrate substrate, corresponding to the plurality of pixel openings one by one, each of the sub-pixels comprising a light emitting element, the light emitting element comprising an anode; a reflective structure in contact with the anode on a side of the anode close to the substrate substrate and corresponding to at least part of the pixel openings. 2.The display substrate of claim 1, wherein, The reflective structure has a first width in a first direction, the pixel openings have a second width in the first direction, the first width is greater than the second width, and the first direction is a direction parallel to a main surface of the substrate substrate. 3.The display substrate of claim 1, wherein, A normal projection of the reflective structure on the substrate substrate covers a normal projection of the pixel openings corresponding thereto on the substrate substrate. 4.The display substrate of claim 3, wherein, The reflective structure comprises a first reflective film and a second reflective film stacked and arranged adjacently, the first reflective film and the second reflective film have different refractive indexes.

5. The display substrate according to any one of claims 1 to 4, further comprising a drive transistor that drives the light emitting element to emit light, wherein The anode of the light emitting element is electrically connected to the first source-drain electrode of the driving transistor through an auxiliary electrode. 6.The display substrate of claim 5, further comprising a first planarization layer and a second planarization layer stacked on the driving transistor, wherein the auxiliary electrode is electrically connected to the first source-drain electrode through a first via structure arranged in the first planarization layer; the anode is electrically connected to the auxiliary electrode through a second via structure arranged in the second planarization layer. 7.The display substrate of claim 6, wherein, The normal projection of the first via structure on the substrate substrate and the normal projection of the second via structure on the substrate substrate have no overlapping part. 8.The display substrate of claim 6, wherein, The reflective structure is arranged between the first planarization layer and the second planarization layer, and the second planarization layer covers part of a surface of the reflective structure away from the substrate substrate and a side surface of the reflective structure. 9.The display substrate of claim 8, wherein, In a direction perpendicular to the main surface of the substrate substrate, a thickness of the part of the reflective structure higher than the first planarization layer is less than 10 times a thickness of the anode. 10.The display substrate of claim 8, wherein, The anode comprises a first sub-anode in contact with the auxiliary electrode and a second sub-anode spaced from the auxiliary electrode, the second sub-anode at least partially overlapping the first sub-anode. 11.The display substrate of claim 8, wherein, The second sub-anode covers a surface of the first sub-anode away from the substrate substrate and a side surface of the first sub-anode. 12.The display substrate of claim 8, wherein, A third planarization layer is arranged between the second sub-anode and the first sub-anode, the second sub-anode is electrically connected to the first sub-anode through a third via structure arranged in the third planarization layer.

13. The display substrate according to any one of claims 6-12, wherein, The plurality of sub-pixels comprises a first color sub-pixel, a second color sub-pixel and a third color sub-pixel, the reflective structure corresponds to the pixel openings of the first color sub-pixel, the second sub-pixel and the third sub-pixel, the anode of the corresponding light emitting element in the plurality of sub-pixels comprises a first electrode end and a second electrode end, the first electrode end is in contact with the reflective structure, and the second electrode end is electrically connected to the corresponding first source-drain electrode through the auxiliary electrode.

14. The display substrate according to any one of claims 6-12, wherein, The anode of the light emitting element comprises a first electrode end and a second electrode end, the first electrode end is in contact with the reflective structure, and the second electrode end is electrically connected with the first source-drain electrode through the auxiliary electrode. 15.The display substrate of claim 14, wherein, The plurality of sub-pixels further comprises a second color sub-pixel, the anode of the light emitting element corresponding to the second color sub-pixel comprises a third electrode end and a fourth electrode end, the third electrode end is in contact with the reflective structure, and the fourth electrode end is electrically connected with the first source-drain electrode through the auxiliary electrode. 16.The display substrate according to any one of claims 1-4, further comprising a fourth planarization layer disposed on the driving transistor, wherein, The fourth planarization layer is provided with a groove structure, a first part of the reflective structure is arranged in the groove structure, and a second part of the reflective structure protrudes out of the fourth planarization layer and is arranged on a side of the first part away from the substrate. 17.The display substrate of claim 16, wherein, In a direction perpendicular to the main surface of the substrate, the distance between the surface of the reflective structure away from the substrate and the substrate is less than the distance between the surface of the fourth planarization layer away from the substrate and the substrate. 18.The display substrate of claim 16, wherein, In a direction perpendicular to the main surface of the substrate, the depth of the groove structure is less than or equal to the thickness of the fourth planarization layer.

19. The display substrate according to claim 17 or 18, further comprising a drive transistor that drives the light emitting element to emit light, wherein The anode of the light emitting element is in contact with and electrically connected with the first source-drain electrode of the driving transistor. 20.The display substrate of claim 19, wherein, The anode of the light emitting element comprises a first electrode end and a second electrode end, the first electrode end is in contact with the reflective structure, and the second electrode end is in contact with and electrically connected with the first source-drain electrode. 21.The display substrate of claim 20, wherein, The fourth planarization layer covers the side surface of the first part of the reflective structure, and the anode of the light emitting element covers the side surface and the surface away from the substrate of the second part of the reflective structure.

22. The display substrate of claim 16, wherein, In a direction perpendicular to the main surface of the substrate, the thickness of the second part of the reflective structure is less than 10 times the thickness of the anode.

23. The display substrate according to any one of claims 1-22, wherein, The anode has a plurality of stepped structures in a plane perpendicular to the main surface of the substrate.

24. The display substrate according to any one of claims 1-23, wherein, The reflective structure is a plurality of independent structures arranged in an array.

25. The display substrate according to any one of claims 1-23, wherein, A plurality of the reflective structures are connected as an integral structure, and the plurality of the reflective structures are arranged in an array.

26. A display substrate, comprising: a substrate; a pixel definition layer on the substrate, comprising a plurality of pixel openings and a pixel spacing portion spacing the plurality of pixel openings; a plurality of sub-pixels on the substrate, corresponding one-to-one to the plurality of pixel openings, each of the sub-pixels comprising a light emitting element, the light emitting element comprising an anode; The anode has a plurality of stepped structures in a plane perpendicular to the main surface of the substrate. 27.The display substrate of claim 26, further comprising a reflective structure, wherein, The reflective structure is in contact with the anode on a side of the anode close to the substrate and corresponds to at least part of the pixel opening. 28.The display substrate of claim 27, wherein, The reflective structure has a first width in a first direction, the pixel opening has a second width in the first direction, the first width is greater than the second width, and the first direction is parallel to the substrate. 29.The display substrate of claim 28, wherein, A normal projection of the reflective structure on the substrate substrate covers a normal projection of the pixel opening corresponding thereto on the substrate substrate. 30.The display substrate of claim 28, wherein, The reflective structure comprises a first reflective film and a second reflective film which are stacked and arranged adjacently, and the first reflective film and the second reflective film have different refractive indexes.

31. The display substrate according to any one of claims 26-30, wherein, The reflective structure is a plurality of independent structures arranged in an array.

32. The display substrate according to any one of claims 26-30, wherein, The plurality of reflective structures are connected as an integral structure, and the plurality of reflective structures are arranged in an array.

33. A display device comprising the display substrate according to any one of claims 1 to 32.

34. A method for manufacturing a display substrate, comprising: providing a substrate substrate; forming a pixel defining layer on the substrate substrate, wherein the pixel defining layer comprises a plurality of pixel openings and a pixel separation portion separating the plurality of pixel openings; forming a sub-pixel corresponding to each of the pixel openings in the plurality of pixel openings, wherein each of the sub-pixels comprises a light emitting element comprising an anode; forming a reflective structure in contact with the anode on a side of the anode close to the substrate substrate, wherein the reflective structure corresponds to at least part of the pixel opening.

35. The method of manufacturing according to claim 34, wherein, The reflective structure comprises a first reflective film and a second reflective film which are stacked and arranged adjacently, and the first reflective film and the second reflective film have different refractive indexes.

36. The production method according to claim 34 or 35, further comprising forming, over the substrate, a drive transistor that drives the light-emitting element to emit light, wherein The anode of the light emitting element is electrically connected to the first source / drain electrode of the driving transistor through an auxiliary electrode.

37. The method according to claim 36, further comprising sequentially forming a first planarization layer and a second planarization layer on the driving transistor, wherein, the auxiliary electrode is electrically connected to the first source / drain electrode through a first via structure provided in the first planarization layer; the anode is electrically connected to the auxiliary electrode through a second via structure provided in the second planarization layer.

38. The method of manufacturing according to claim 37, wherein, A normal projection of the first via structure on the substrate substrate and a normal projection of the second via structure on the substrate substrate do not have an overlapping portion.

39. The producing method according to claim 34 or 35, further comprising forming a fourth planarization layer on the drive transistor, wherein, A recess structure is formed in the fourth planarization layer, a first part of the reflective structure is formed in the recess structure, and a second part of the reflective structure protrudes out of the fourth planarization layer and is formed on a side of the first part away from the substrate substrate.

40. The method of manufacturing according to claim 39, wherein, In a direction perpendicular to a main surface of the substrate substrate, a depth of the recess structure is less than or equal to a thickness of the fourth planarization layer.

41. The production method according to claim 40, further comprising forming a drive transistor that drives the light-emitting element to emit light on the substrate, wherein The anode of the light emitting element and the first source / drain electrode of the driving transistor are in contact and electrically connected.

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