Wafer intrinsic temperature control method, device and equipment

By acquiring and analyzing spectral data, and combining a multi-wavelength elliptic polarimeter and a multivariable PID control algorithm, high-precision independent temperature control of MOCVD equipment in different zones was achieved. This solved the problems of dynamic temperature difference and measurement error in existing temperature control solutions, improved the uniformity and stability of epitaxial layers, and supported the production of high-performance semiconductor devices.

CN121852877BActive Publication Date: 2026-05-26JIHUA LAB
View PDF 2 Cites 0 Cited by

Patent Information

Authority / Receiving Office
CN · China
Patent Type
Patents(China)
Current Assignee / Owner
JIHUA LAB
Filing Date
2026-03-17
Publication Date
2026-05-26

AI Technical Summary

Technical Problem

Existing MOCVD equipment temperature control solutions suffer from dynamic temperature differences, measurement errors, and process fluctuations, making it difficult to achieve high-precision and uniform temperature control, which affects the quality and compositional consistency of epitaxial layer crystals.

Method used

By acquiring amplitude ratio and phase difference spectra, combined with a multi-wavelength ellipsometry, a preset time sequence, and an optical model, the corrected growth rate is extracted. Then, using the thermal inertia equation, growth kinetics relationship, and multivariable PID control algorithm, feedforward compensation power and feedback regulation power are generated, and the wafer intrinsic temperature power control command is calculated to achieve independent temperature control in different zones.

Benefits of technology

It improves the dynamic response and anti-interference capability of the MOCVD system, ensures the uniformity of epitaxial layer thickness, composition consistency and crystal quality stability, enhances the consistency and reliability of MOCVD process, and provides technical support for the large-scale production of high-performance semiconductor devices.

✦ Generated by Eureka AI based on patent content.

Smart Images

  • Figure CN121852877B_ABST
    Figure CN121852877B_ABST
Patent Text Reader

Abstract

This invention relates to the field of semiconductor technology, and more particularly to a method, apparatus, and device for controlling the intrinsic temperature of a wafer. The method involves extracting features from amplitude ratio and phase difference spectra based on a preset time sequence to obtain a corrected growth rate; calculating the process formulation change sequence according to a preset thermal inertia equation and a preset growth kinetic relationship to obtain feedforward compensation power; calculating the corrected growth rate according to a preset multivariable PID control algorithm to obtain feedback regulation power; and solving the feedforward compensation power and feedback regulation power according to a preset decoupling formula to obtain the intrinsic temperature power control command for the wafer. By generating feedback regulation power through the multivariable PID control algorithm, and reducing temperature zone interference through decoupling, the method achieves zoned temperature control, improves the system's anti-interference capability, ensures the stability of epitaxial layer quality, enhances the consistency and reliability of MOCVD processes, and provides support for the large-scale production of semiconductor devices.
Need to check novelty before this filing date? Find Prior Art