Variable capacitance gyroscope and manufacturing method thereof
By designing a variable capacitance gyroscope, which utilizes the inertial body and capacitor plates to form a capacitance change sensing angle, the high cost and signal loss problems of traditional sensing methods are solved, realizing miniaturized, high-precision, and low-power gravity level sensing.
Patent Information
- Authority / Receiving Office
- CN · China
- Patent Type
- Applications(China)
- Current Assignee / Owner
- Filing Date
- 2025-12-09
- Publication Date
- 2026-04-14
AI Technical Summary
Existing technologies struggle to achieve miniaturized, high-precision, and low-energy-consumption gravity level sensing, especially in applications involving small moving objects such as drones, where traditional sensing methods are costly and prone to signal loss.
Design a variable capacitance gyroscope, including a semiconductor substrate and an inertial body. When the inertial body rotates in a circular cavity, it forms a capacitance with the capacitor plates. The angle is sensed by the change in capacitance value. The capacitor plates and the inertial body are manufactured by etching and deposition processes. The grooves of the inertial body are filled with conductive material to form an inertial body that is suspended between the plates.
Miniaturized sensing devices have been achieved, reducing manufacturing costs and providing high-precision angle sensing under low power consumption conditions. They are also highly shock resistant and have stable signal transmission with no missed detections.
Smart Images
Figure CN121855482A_ABST
Abstract
Description
Technical Field
[0001] This application relates to the field of sensors, and more particularly to a variable capacitance gyroscope and its manufacturing method. Background Technology
[0002] Sensing the levelness of moving objects under gravity is crucial for controlling their attitude and trajectory. Moving objects include aerial vehicles such as airplanes, spacecraft, rockets, and missiles, as well as vehicles on the ground such as cars, trains, light rail, and high-speed rail, and various ships and even torpedoes in the water. Since the invention of airplanes, and up to the widespread use of drones today, real-time sensing and feedback of pitch and roll levelness has been indispensable for aircraft attitude control. Simultaneously, levelness measurement is also widely used for static attitude measurement of various moving objects to maintain balance with gravity, parallelism between surfaces, and for aesthetic purposes.
[0003] Traditional levelness sensing methods and devices typically rely on the relative equilibrium posture and spatial coordinates of solid or liquid sensing units under gravity, either directly or through certain induced electrical signals, forming a system that integrates mechanical, electronic, and optical elements.
[0004] With the continuous expansion of its applications, especially for the miniaturization, micro-miniaturization, low power consumption and miniaturization of emerging and growing drones and other motion devices, the demand for miniaturized, high-precision and low-power gravity level sensors is becoming increasingly urgent.
[0005] Therefore, a variable capacitance gyroscope and its manufacturing method are needed. Summary of the Invention
[0006] To address the aforementioned product performance issues, this invention provides a variable capacitance gyroscope and its manufacturing method.
[0007] This invention provides a variable capacitance gyroscope, comprising: a semiconductor substrate and an inertial body. The semiconductor substrate has an annular cavity. The semiconductor substrate below the annular cavity has a first capacitor plate uniformly arranged in a circumferential array, and the semiconductor substrate above the annular cavity has a second capacitor plate uniformly arranged in a circumferential array. The first and second capacitor plates are arranged parallel to each other. The inertial body is located inside the annular cavity and can rotate around the central axis of the annular cavity. When the inertial body rotates to a position between the pair of first and second capacitor plates, it forms a first capacitor and a second capacitor with the first and second capacitor plates, respectively.
[0008] The present invention also provides a method for manufacturing the above-mentioned variable capacitance gyroscope, comprising the following steps: A semiconductor substrate is provided, having a first capacitor plate uniformly arrayed along the circumference on the surface of the semiconductor substrate; A first semiconductor dielectric layer is formed on a semiconductor substrate, and the first semiconductor dielectric layer is etched to form an annular groove; A first sacrificial layer is formed covering the sidewalls and bottom surface of the annular groove; The first sacrificial layer is etched to form the groove corresponding to the inertial body; An inertial body is formed by filling the grooves of the inertial body with a conductive material; A second sacrificial layer is formed, filling the annular groove and covering the inertial body; A second semiconductor dielectric layer is formed covering the first semiconductor dielectric layer and the second sacrificial layer; A release hole is formed by etching in the second semiconductor dielectric layer, the first sacrificial layer and the second sacrificial layer are removed from the release hole, and the release hole is sealed. A second capacitor plate corresponding to the first capacitor plate is formed on the second semiconductor dielectric layer; A third semiconductor dielectric layer is then formed on the second capacitor plate.
[0009] Another method for manufacturing a variable capacitance gyroscope provided by the present invention includes the following steps: A first semiconductor substrate is provided, and a first capacitor plate is uniformly arrayed along the circumference on the surface of the first semiconductor substrate. A first semiconductor dielectric layer is formed on a first semiconductor substrate, and the first semiconductor dielectric layer is etched to form an annular groove; A first sacrificial layer is formed covering the sidewalls and bottom surface of the annular groove; The first sacrificial layer is etched to form the groove corresponding to the inertial body; An inertial body is formed by filling the grooves of the inertial body with a conductive material; Forming a filled annular groove and a second sacrificial layer covering the inertial body; A second semiconductor cap is provided, which includes a second capacitor plate and has a release hole formed in the second semiconductor cap; The second semiconductor cap and the first semiconductor substrate are bonded together, and the second capacitor plate and the first capacitor plate are parallel and corresponding. Remove the first and second sacrificial layers from the release hole and seal the release hole.
[0010] Compared with the prior art, the technical solutions of the embodiments of this disclosure have the following beneficial effects: This invention's inertial body, when inserted at any position between the upper and lower plates of a parallel-plate capacitor, will cause a series connection of capacitors with minimal distance between the two plates at that location. The position of the inertial body can be determined by the change in capacitance, eliminating signal loss. Under the electrostatic repulsion of the upper and lower plates, the conductive inertial body tends to levitate between the two plates, reducing or eliminating friction. The signal mechanism is relatively simple. This invention achieves miniaturization of the sensing device, significantly reducing manufacturing costs and providing higher shock resistance. Attached Figure Description
[0011] To more clearly illustrate the technical solutions in the embodiments of this application, the accompanying drawings used in the description of the embodiments will be briefly introduced below. Obviously, the accompanying drawings described below are only some embodiments of this application. For those skilled in the art, other drawings can be obtained based on these drawings without creative effort.
[0012] Figure 1 This is a top view schematic diagram of a variable capacitance gyroscope according to an embodiment of the present invention; Figure 2 This is a schematic cross-sectional view of a variable capacitance gyroscope according to an embodiment of the present invention along the A-A' direction; Figure 3 This is a schematic diagram of an intermediate process in the manufacturing method of a variable capacitance gyroscope according to an embodiment of the present invention.
[0013] In the picture: Semiconductor substrate 110, inertial body 120, annular cavity 210, first capacitor plate 310, second capacitor plate 320, first semiconductor dielectric layer 410, second semiconductor dielectric layer 420, central axis of annular cavity 211, semiconductor substrate 100, first sacrificial layer 104, second sacrificial layer 106, second semiconductor dielectric layer 420, release hole 108, third semiconductor dielectric layer 430, first IO pad 10, second IO pad 20, semiconductor device 30 Detailed Implementation
[0014] Preferred embodiments of the invention will now be described in more detail. While preferred embodiments of the invention are described below, it should be understood that the invention can be implemented in various forms and should not be limited to the embodiments set forth herein.
[0015] In this invention, unless otherwise stated, directional terms such as "upper" and "lower" generally refer to the upper and lower parts of the device in its normal operating state, while "inner" and "outer" refer to the parts relative to the outline of the device. Furthermore, the terms "first," "second," and "third" are used for descriptive purposes only and should not be construed as indicating or implying relative importance or implicitly specifying the number of indicated technical features. Thus, a feature defined as "first," "second," or "third" may explicitly or implicitly include one or more of that feature. In the description of this invention, "a plurality of" means two or more, unless otherwise explicitly specified. Since this invention pertains to electrical devices, connection and interconnection both refer to conductive interconnections. Because the accompanying drawings describe the same device, the same reference numerals denote the same components.
[0016] Figure 1 The diagram shows a top view of a variable capacitance gyroscope according to an embodiment of the present invention. Figure 2 It shows Figure 1 A schematic cross-sectional view of the variable capacitance gyroscope along the A-A' direction is shown below. Specific embodiments of the invention will be further described in detail below with reference to the accompanying drawings.
[0017] The variable capacitance gyroscope of the present invention includes: a semiconductor substrate 110 and an inertial body 120. The semiconductor substrate 110 has an annular cavity 210. A first capacitor plate 310 is uniformly arranged in a circumferential array within the semiconductor substrate below the annular cavity 210, and a second capacitor plate 320 is uniformly arranged in a circumferential array within the semiconductor substrate above the annular cavity 210. The first and second capacitor plates 310 and 320 are arranged parallel to each other. The inertial body 120 is located within the annular cavity 210 and can rotate around the central axis 211 of the annular cavity. When the inertial body 120 rotates to a position between the pair of first and second capacitor plates 310 and 320, it forms a first capacitor and a second capacitor with the first and second capacitor plates 310 and 320, respectively. In the embodiments of this disclosure, multiple second capacitor plates 320 are respectively disposed within the top wall of the annular cavity 210 and are separated from each other. Multiple first capacitor plates 310 are respectively disposed under the bottom surface of the annular cavity 210 and are separated from each other.
[0018] In one embodiment, a first semiconductor dielectric layer 410 is provided between the first capacitor plate 310 and the annular cavity 210, and a second semiconductor dielectric layer 420 is provided between the second capacitor plate 320 and the annular cavity 210.
[0019] In one embodiment, a semiconductor device 30 is provided in the semiconductor substrate below the first capacitor plate 310. The first capacitor plate 310 is interconnected with the semiconductor device 30 and interconnected with the first IO pad 10 on the surface of the semiconductor substrate 110 through a through-silicon via (TSV). The second capacitor plate 320 is interconnected with the second IO pad 20 on the surface of the semiconductor substrate 110 through a through-silicon via.
[0020] In one embodiment, the system further includes: a semiconductor device 30 is located in a semiconductor substrate above the second capacitor plate 320; the second capacitor plate 320 is interconnected with the semiconductor device 30 and interconnected with a second IO pad 20 on the surface of the semiconductor substrate 110 via a through-silicon via; and the first capacitor plate 310 is interconnected with a first IO pad 10 on the surface of the semiconductor substrate 110 via a through-silicon via.
[0021] In one embodiment, the material of the inertial body 120 is any one of aluminum, copper, tungsten, nickel, thallium, cobalt, titanium, silver, gold or silicon compounds or alloys thereof, or any one of aluminum, copper, tungsten, nickel, thallium, cobalt, titanium, silver, gold or silicon compounds or alloys thereof wrapped with a dielectric material.
[0022] In one embodiment, the inertial body 120 is a cylinder or polygon having two upper and lower surfaces parallel to the first capacitor plate or the second capacitor plate.
[0023] In one embodiment, the outer layer of the inertial body is wrapped with a dielectric layer.
[0024] In this embodiment, the variable capacitance gyroscope further includes a semiconductor device 30 connected to each first capacitor plate 310 or second capacitor plate 320, the semiconductor device 30 being formed within a semiconductor substrate 110. In some embodiments, the semiconductor substrate 110 of the variable capacitance gyroscope may include a signal readout circuit, forming an integrated signal sensing and readout mechanism.
[0025] The semiconductor substrate 110 of the variable capacitance gyroscope provided in this embodiment is placed in a position relatively parallel to Earth's gravity. As the semiconductor substrate 110 rotates around a central axis in the same direction as gravity, the inertial body 120 can roll or slide within the annular cavity 210 to an equilibrium position, eventually stopping at the gravitational equilibrium position. At this equilibrium position, the first capacitor plate 310 and the second capacitor plate 320 are electrically coupled to the inertial body 120, forming a pair of capacitors connected in series with very small distance between the capacitor plates. This pair of sensing capacitors can be detected by the peripheral circuit composed of semiconductor devices. This allows the sensing device to achieve very small angular accuracy under low-power operating conditions, while significantly reducing manufacturing costs. The coupling signal output from the capacitor plate at this position determines the angle of rotation of the sensor and the semiconductor substrate around the central axis.
[0026] In some embodiments, the inertial body 120 may be cylindrical.
[0027] Figure 3 This is a schematic diagram of an intermediate process in the manufacturing method of a variable capacitance gyroscope according to an embodiment of the present invention. The manufacturing method of the variable capacitance gyroscope of the present invention will be further described below. (Reference) Figures 1-3 .
[0028] Including the following steps: A semiconductor substrate 100 is provided, and a first capacitor plate 310 is uniformly arrayed along the circumference on the surface of the semiconductor substrate 100. A first semiconductor dielectric layer 410 is formed on the semiconductor substrate 100, and the first semiconductor dielectric layer 410 is etched to form an annular groove. A first sacrificial layer 104 is formed covering the sidewalls and bottom surface of the annular groove; The first sacrificial layer 104 is etched to form a groove corresponding to the inertial body; An inertial body 120 is formed by filling the grooves of the inertial body with a conductive material; A second sacrificial layer 106 is formed to fill the annular groove and cover the inertial body 120; A second semiconductor dielectric layer 420 is formed covering the first semiconductor dielectric layer 410 and the second sacrificial layer 106; A release hole 108 is formed by etching in the second semiconductor dielectric layer 420, the first sacrificial layer 104 and the second sacrificial layer 106 are removed from the release hole, and the release hole 108 is sealed. A second capacitor plate 320 corresponding to the first capacitor plate 310 is formed on the second semiconductor dielectric layer 420. A third semiconductor dielectric layer 430 is then formed on the second capacitor plate 320.
[0029] In one embodiment, after the step of etching the first sacrificial layer to form the groove corresponding to the inertial body, the method further includes: forming a dielectric layer covering the groove of the inertial body; after the step of filling the groove of the inertial body with a conductive material to form the inertial body, the method further includes: forming a dielectric layer covering the top of the groove of the inertial body.
[0030] In one embodiment, the semiconductor substrate includes a semiconductor device 30 interconnected with a first capacitor plate, and further includes the step of:
[0031] A through-silicon via (TSV) interconnecting with the first capacitor plate 310 is formed in the semiconductor substrate 100, and a TSV interconnecting with the TSV of the semiconductor substrate 100 is formed in the first semiconductor dielectric layer 410 and the second semiconductor dielectric layer 420, and a first IO pad 10 is formed on the surface of the TSV. A through-silicon via (TSV) interconnecting the second capacitor electrode 320 is formed in the second semiconductor dielectric layer 420, and a second IO pad 20 is formed on the surface of the TSV.
[0032] The following describes a specific manufacturing process, in which the materials and processes are not intended to limit the scope of protection of this invention. In the embodiments of this disclosure, the specific steps include: First, a silicon-based semiconductor substrate 100 is provided, and a plurality of first capacitor plates 310 arranged in a uniform array along the circumference are formed on the semiconductor substrate 100. It may also include forming first I / O pads 10 interconnecting with the first capacitor plates 310. In embodiments of this disclosure, the semiconductor substrate 100 includes a plurality of semiconductor devices 30 and a signal readout circuit CMOS (not shown in the figures). Each semiconductor device 30 is connected to one first capacitor plate 310. The semiconductor device 30 and the readout circuit are combined to receive electrical signals emitted by the first capacitor plate 310, forming an integrated signal sensing and readout. The semiconductor substrate 100 includes a first semiconductor dielectric layer 410, such as a silicon dioxide layer. In some embodiments, the silicon dioxide layer can be formed by chemical vapor deposition. In other embodiments, other methods, such as physical vapor deposition, can also be used to form the first semiconductor dielectric layer of other materials. The specific thickness and manufacturing process can be selected according to the different materials and processes. Any substitutions and modifications mentioned above are within the protection scope of this invention.
[0033] Continue to refer to Figure 2 The first semiconductor dielectric layer 410 at the corresponding position of the first capacitor plate 310 is etched to form an annular groove. In this embodiment of the present disclosure, after forming the annular groove, a first sacrificial layer 104 is formed at the bottom and sidewalls of the annular groove. In some embodiments, the material of the first sacrificial layer 104 may be germanium or α-C or PI, or metals such as aluminum or copper, and may be formed by chemical vapor deposition, physical vapor deposition, or electroless plating.
[0034] In one embodiment, a dielectric layer covering the inertial body groove may be formed on the first sacrificial layer.
[0035] Continue to refer to Figure 2 The first sacrificial layer 104 at a certain point in the annular groove is etched to form a groove corresponding to the inertial body. Then, a conductive material is filled into the groove of the inertial body using chemical vapor deposition or electroplating to form the inertial body 120; for example, tungsten or copper is deposited. Next, a planarization process is performed, using chemical mechanical polishing to planarize the intermediate structure formed in this step from one side of the first surface of the semiconductor substrate 100.
[0036] In some embodiments, the material of the inertial body can be any one of aluminum, copper, tungsten, nickel, thallium, cobalt, titanium, silver, and gold, or an alloy thereof, or any one of aluminum, copper, tungsten, nickel, thallium, cobalt, titanium, silver, and gold, or an alloy thereof, encapsulated by a dielectric body. Specifically, in the embodiments of this disclosure, the material of the inertial body is copper. In some other embodiments, the material of the inertial body can also be a silicon compound.
[0037] In one embodiment, a medium layer may continue to be formed covering the top of the inertial body groove.
[0038] In some embodiments, the inertial body 120 can be a sphere, a cylinder, or other shapes. In this embodiment, the inertial body is a cylinder with its axis of symmetry along the central axis 211.
[0039] Continue to refer to Figure 2 A second sacrificial layer 106 is deposited, which can be made of the same materials and using the same process as the first sacrificial layer. The second sacrificial layer 106 covers the inertial body 120.
[0040] Continue to refer to Figure 2 Next, a second semiconductor dielectric layer 420 is deposited, which is a silicon nitride material formed by chemical vapor deposition. In other embodiments, other methods, such as physical vapor deposition, can also be used to form a second semiconductor dielectric layer of other materials. The specific thickness and manufacturing process can be selected according to the different materials and processes. Any substitutions and modifications mentioned above are within the protection scope of this invention.
[0041] Continue to refer to Figure 2 A release hole 108 is formed by etching in the second semiconductor dielectric layer 420. The first sacrificial layer 104 and the second sacrificial layer 106 are removed from the release hole, separating the inertial body 120 from the annular groove and sealing the release hole 108. Specifically, the removal of the first and second sacrificial layers can be achieved by introducing corresponding chemical gases through the release hole to selectively remove the first and second sacrificial layers. For example, in one specific embodiment, silicon dioxide can be removed with hydrofluoric acid gas, α-C with ionized oxygen or nitrogen gas, and germanium with hydrogen peroxide vapor. Then, the release hole is sealed using physical vapor deposition or chemical vapor deposition, with silicon dioxide as the medium, enclosing the annular groove into an annular cavity. Planarization is then performed by chemical mechanical polishing. In other embodiments, sealing the release hole can also be incorporated into the subsequent dielectric layer formation step.
[0042] refer to Figure 3 Next, a second capacitor plate 320 corresponding to the first capacitor plate 310 is formed on the second semiconductor dielectric layer 420. Then, a third semiconductor dielectric layer 430 is formed on the second capacitor plate 320.
[0043] In embodiments of this disclosure, the method further includes forming through-silicon vias (TSVs) and depositing first and second IO pads on the TSVs. In some embodiments, the IO pads may be made of aluminum.
[0044] A method for manufacturing a variable capacitance gyroscope in another embodiment includes the steps of: A first semiconductor substrate 100 is provided, and a first capacitor plate 310 is uniformly arrayed along the circumference on the surface of the first semiconductor substrate 100. A first semiconductor dielectric layer 410 is formed on the first semiconductor substrate 100, and the first semiconductor dielectric layer 410 is etched to form an annular groove. A first sacrificial layer 104 is formed covering the sidewalls and bottom surface of the annular groove; The first sacrificial layer 104 is etched to form a groove corresponding to the inertial body; An inertial body 120 is formed by filling the grooves of the inertial body with a conductive material; A filling annular groove and a second sacrificial layer 106 covering the inertial body 120 are formed; A second semiconductor cap is provided, which includes a second capacitor plate 320 and has a release hole formed in the second semiconductor cap; The second semiconductor cap and the first semiconductor substrate 100 are bonded together, and the second capacitor plate 320 and the first capacitor plate 310 are parallel and corresponding. Remove the first and second sacrificial layers from the release hole 108 and seal the release hole.
[0045] In one embodiment, the first semiconductor substrate includes a semiconductor device 30 interconnected with a first capacitor plate, a through-silicon via (TSV) interconnected with the first capacitor plate is formed in the first semiconductor substrate, and TSV interconnected with the TSV of the first semiconductor substrate is formed in the first semiconductor dielectric layer and the second semiconductor capping layer, and a first IO pad is formed on the surface of the TSV. A through-silicon via (TSV) interconnecting the second capacitor plate is formed in the second semiconductor cap, and a second I / O pad is formed on the surface of the TSV.
[0046] This invention provides a MENS level sensor and its manufacturing method, which realizes the miniaturization of the sensing device and can achieve an angle accuracy of 0.1 degrees or even smaller under low power consumption conditions, while significantly reducing manufacturing costs.
[0047] The above description is merely an embodiment of this application and does not limit the patent scope of this application. Any equivalent structural or procedural transformations made using the content of this application's specification and drawings, such as the combination of technical features between embodiments, or direct or indirect applications in other related technical fields, are similarly included within the patent protection scope of this application.
Claims
1. A variable capacitance gyroscope, characterized in that, include: The semiconductor substrate and the inertial body are described. The semiconductor substrate has an annular cavity. The semiconductor substrate below the annular cavity has a first capacitor plate arranged in a uniform array along the circumference, and the semiconductor substrate above the annular cavity has a second capacitor plate arranged in a uniform array along the circumference. The first capacitor plate and the second capacitor plate are arranged in parallel opposite to each other. The inertial body is located in the annular cavity and can rotate around the central axis of the annular cavity. When the inertial body rotates to a position between the pair of first capacitor plates and the second capacitor plate, it forms a first capacitor and a second capacitor with the first capacitor plate and the second capacitor plate, respectively.
2. The variable capacitance gyroscope as described in claim 1: characterized in that, A first semiconductor dielectric layer is provided between the first capacitor plate and the annular cavity, and a second semiconductor dielectric layer is provided between the second capacitor plate and the annular cavity.
3. The variable capacitance gyroscope as described in claim 1, characterized in that, Also includes: The semiconductor substrate beneath the first capacitor plate contains a semiconductor device. The first capacitor plate is interconnected with the semiconductor device and interconnected with the first IO pad on the surface of the semiconductor substrate through a through-silicon via. The second capacitor plate is interconnected with the second IO pad on the surface of the semiconductor substrate through a through-silicon via.
4. The variable capacitance gyroscope as described in claim 1, characterized in that, Also includes: The semiconductor substrate above the second capacitor plate contains a semiconductor device. The second capacitor plate is interconnected with the semiconductor device and interconnected with the second IO pad on the surface of the semiconductor substrate through a through-silicon via. The first capacitor plate is interconnected with the first IO pad on the surface of the semiconductor substrate through a through-silicon via.
5. The variable capacitance gyroscope as described in claim 1, characterized in that, The material of the inertial body is any one of aluminum, copper, tungsten, nickel, thallium, cobalt, titanium, silver, gold or silicon compounds or their alloys, or any one of aluminum, copper, tungsten, nickel, thallium, cobalt, titanium, silver, gold or silicon compounds or their alloys encapsulated in a dielectric material.
6. The variable capacitance gyroscope as described in claim 1, characterized in that, The inertial body is a cylinder or polygon with two upper and lower surfaces parallel to the first or second capacitor plate.
7. The variable capacitance gyroscope as described in claim 1, characterized in that, The outer layer of the inertial body is wrapped by a dielectric layer.
8. A method for manufacturing a variable capacitance gyroscope according to any one of claims 1-7, characterized in that, Including the following steps: A semiconductor substrate is provided, having a first capacitor plate uniformly arrayed along the circumference on the surface of the semiconductor substrate; A first semiconductor dielectric layer is formed on a semiconductor substrate, and the first semiconductor dielectric layer is etched to form an annular groove; A first sacrificial layer is formed covering the sidewalls and bottom surface of the annular groove; The first sacrificial layer is etched to form the groove corresponding to the inertial body; An inertial body is formed by filling the grooves of the inertial body with a conductive material; A second sacrificial layer is formed, filling the annular groove and covering the inertial body; A second semiconductor dielectric layer is formed covering the first semiconductor dielectric layer and the second sacrificial layer; A release hole is formed by etching in the second semiconductor dielectric layer, the first sacrificial layer and the second sacrificial layer are removed from the release hole, and the release hole is sealed. A second capacitor plate corresponding to the first capacitor plate is formed on the second semiconductor dielectric layer; A third semiconductor dielectric layer is then formed on the second capacitor plate.
9. The manufacturing method as described in claim 8, characterized in that, Including the following steps: After the step of etching the first sacrificial layer to form the corresponding inertial body groove, the method further includes: forming a dielectric layer covering the inertial body groove; after the step of filling the inertial body groove with conductive material to form the inertial body, the method further includes: forming a dielectric layer covering the top of the inertial body groove.
10. The method for manufacturing a variable capacitance gyroscope as described in claim 8, characterized in that, The semiconductor substrate includes a semiconductor device interconnected with the first capacitor plate, and the method further includes the following steps: A through-silicon via (TSV) interconnecting with a first capacitor plate is formed in a semiconductor substrate, and a TSV interconnecting with a TSV of the first semiconductor substrate is formed in a first semiconductor dielectric layer and a second semiconductor dielectric layer, and a first IO pad is formed on the surface of the TSV. A through-silicon via (TSV) interconnecting the second capacitor plate is formed in the second semiconductor dielectric layer, and a second I / O pad is formed on the surface of the TSV.
11. A method for manufacturing a variable capacitance gyroscope according to any one of claims 1-7, characterized in that, Including the following steps: A first semiconductor substrate is provided, and a first capacitor plate is uniformly arrayed along the circumference on the surface of the first semiconductor substrate. A first semiconductor dielectric layer is formed on a first semiconductor substrate, and the first semiconductor dielectric layer is etched to form an annular groove; A first sacrificial layer is formed covering the sidewalls and bottom surface of the annular groove; The first sacrificial layer is etched to form the groove corresponding to the inertial body; An inertial body is formed by filling the grooves of the inertial body with a conductive material; Forming a filled annular groove and a second sacrificial layer covering the inertial body; A second semiconductor cap is provided, which includes a second capacitor plate and has a release hole formed in the second semiconductor cap; The second semiconductor cap and the first semiconductor substrate are bonded together, and the second capacitor plate and the first capacitor plate are parallel and corresponding. Remove the first and second sacrificial layers from the release hole and seal the release hole.
12. The method for manufacturing a variable capacitance gyroscope as described in claim 11, characterized in that, The first semiconductor substrate includes a semiconductor device interconnected with a first capacitor plate, a through-silicon via (TSV) interconnected with the first capacitor plate is formed in the first semiconductor substrate, and a TSV interconnected with the TSV of the first semiconductor substrate is formed in the first semiconductor dielectric layer and the second semiconductor capping layer, and a first IO pad is formed on the surface of the TSV. A through-silicon via (TSV) interconnecting the second capacitor plate is formed in the second semiconductor cap, and a second I / O pad is formed on the surface of the TSV.