Light emitting diode and light emitting device

Abstract

The invention provides a light-emitting diode and a light-emitting device, the light-emitting diode is divided into an N-side region and a P-side region which are oppositely arranged along the overlook direction of the light-emitting diode, and the light-emitting diode comprises a semiconductor laminated layer, a first insulating layer, a first connecting electrode and a second connecting electrode; wherein the first insulating layer is provided with an N opening part and a P opening part, the first connecting electrode comprises a main body part located in an N-side area and a finger-shaped part extending towards a P-side area, and at least one P opening part is arranged between the finger-shaped part and the edge, pointed by the finger-shaped part, of the P-side area. Compared with the prior art, more paths are provided for the current to flow from the P-type electrode to the active layer, the current expansion effect is greatly optimized, the vertical channel of the P opening part shortens the transverse flowing distance of the current in the P-type semiconductor layer, the series resistance and the working voltage are effectively reduced, and the positive effect of improving the brightness uniformity of the device is achieved.

Description

Technical Field

[0001] This application relates to the field of semiconductor manufacturing technology, and in particular to a light-emitting diode and a light-emitting device. Background Technology

[0002] A light-emitting diode (LED) is a semiconductor device whose basic structure includes a PN junction between a P-type semiconductor and an N-type semiconductor. When a forward voltage is applied to the LED, electrons and holes recombine at the junction of the PN junction, releasing energy. This energy is emitted in the form of photons, forming light radiation.

[0003] To achieve the ultimate brightness performance of LED chips, this can be achieved by reducing the number or size of electrode openings on the N-type semiconductor layer. While reducing the obstruction of the light-emitting area by the electrodes increases the light-emitting area of ​​the device, this design inevitably leads to an increase in the lateral distance of current flow in the N-type layer, causing current congestion, increasing the series resistance of the device, and ultimately resulting in an increase in operating voltage (Vf) and a decrease in photoelectric conversion efficiency. To alleviate the voltage rise problem caused by reducing N-holes, existing technologies typically add current paths on the P-type semiconductor layer side, for example, by increasing the number of electrode openings on the P-type layer, to provide more vertical current paths, reduce lateral resistance, and balance the voltage rise.

[0004] Therefore, how to rationally design the electrode openings on the P-type layer to effectively improve the voltage rise and ensure the reliability and service life of the device is a technical problem that urgently needs to be solved. Summary of the Invention

[0005] In view of the defects and deficiencies in the prior art described above, this application provides a light-emitting diode and a light-emitting device that can effectively reduce the operating voltage while ensuring the uniformity of current distribution, and also take into account the structural strength of the electrodes and pads and the reliability of the package.

[0006] In a first aspect, this application provides a light-emitting diode, which is divided into an N-side region and a P-side region arranged opposite to each other along its top view direction, the light-emitting diode comprising at least:

[0007] A semiconductor stack, comprising an N-type semiconductor layer, an active layer, and a P-type semiconductor layer stacked sequentially;

[0008] A first insulating layer is disposed above and on the sidewalls of the semiconductor stack, and has a plurality of N-type openings above the N-type semiconductor layer and a plurality of P-type openings above the P-type semiconductor layer; the N-type openings are arranged in the N-side region and the P-side region, and the P-type openings are arranged in the P-side region.

[0009] The first connecting electrode and the second connecting electrode are formed on the first insulating layer and are electrically connected to the N-type semiconductor layer and the P-type semiconductor layer respectively through the N-opening and the P-opening.

[0010] The first connecting electrode includes a main body portion located in the N-side region and a finger-shaped portion extending toward the P-side region, wherein at least one P-opening is included between the finger-shaped portion and the edge of the P-side region to which the finger-shaped portion points.

[0011] Secondly, this application also provides a light-emitting device, the light-emitting device comprising:

[0012] Packaging substrate;

[0013] At least one light-emitting diode is disposed on the surface of the packaging substrate, and the packaging substrate and the electrode structure of the light-emitting diode are electrically connected; the light-emitting diode is the light-emitting diode provided by the above technical solution.

[0014] Compared with the prior art, the light-emitting diode and light-emitting device provided in this application have at least the following beneficial effects:

[0015] The technical solution of this application provides more paths for current to flow from the P-type electrode to the active layer by adding a P-opening between the end of the finger-shaped portion of the first connecting electrode and the edge of the P-region, which greatly optimizes the current spreading effect. The added vertical channel shortens the distance of the current flowing laterally in the P-type semiconductor layer, effectively reducing the series resistance and operating voltage. In addition, by reasonably designing the relative position of the added P-opening to the original P-opening, it also has a positive effect on improving the brightness uniformity of the device. Attached Figure Description

[0016] Figure 1 This is a schematic diagram of the structure of the light-emitting diode provided in Embodiment 1;

[0017] Figure 2 for Figure 1 Schematic diagram of the cross-sectional structure along A-A';

[0018] Figure 3 for Figure 1 Schematic diagram of the cross-sectional structure along B-B';

[0019] Figure 4 for Figure 1 A partially enlarged structural diagram;

[0020] Figure 5 A schematic diagram of the first insulating layer structure provided in Embodiment 1

[0021] Figure 6This is a schematic diagram of the connection electrode structure provided in Embodiment 1;

[0022] Figure 7 This is a schematic diagram of the pad electrode structure provided in Example 1;

[0023] Figure 8 This is a schematic diagram of the structure of the light-emitting diode provided in Embodiment 2;

[0024] Figure 9 for Figure 8 A partially enlarged structural diagram;

[0025] Figure 10 This is a schematic diagram of the structure of the light-emitting diode provided in Embodiment 3;

[0026] Figure 11 This is a schematic diagram of the structure of the light-emitting diode provided in Embodiment 4;

[0027] Figure 12 for Figure 11 A partially enlarged structural diagram;

[0028] Figure 13 This is a schematic diagram of the structure of the light-emitting diode provided in Embodiment 5;

[0029] Figure 14 for Figure 13 A partially enlarged structural diagram;

[0030] Figure 15 This is a schematic diagram of the light-emitting device provided in Embodiment Six.

[0031] List of reference numerals in the attached diagram:

[0032] 100, Substrate; 200, Semiconductor stack; 210, N-type semiconductor layer; 220, Active layer; 230, P-type semiconductor layer; 300, Current spreading layer; 400, Current blocking layer; 500, Reflective layer;

[0033] 600, First insulating layer; 610, N-opening; 611, First N-opening; 612, Second N-opening; 620, P-opening; 621, First P-opening; 622, Second P-opening; 623, Third P-opening;

[0034] 710. First connecting electrode; 711. Main body portion; 712. Finger-shaped portion; 7121. First finger-shaped portion; 7122. Second finger-shaped portion; 713. Surrounding portion;

[0035] 720, Second connecting electrode; 720a, First edge; 720b, Second edge; 720c, Third edge; 720d, Fourth edge;

[0036] 800, Second insulation layer;

[0037] 910, First pad electrode; 920, Second pad electrode;

[0038] S1, N-side region; S2, P-side region;

[0039] 10. Light-emitting device; 101. Packaging substrate; 102. Light-emitting element. Detailed Implementation

[0040] This application provides a light-emitting diode, which is divided into an N-side region and a P-side region arranged opposite to each other along its top view direction. The light-emitting diode includes at least:

[0041] A semiconductor stack, comprising an N-type semiconductor layer, an active layer, and a P-type semiconductor layer stacked sequentially;

[0042] A first insulating layer is disposed above and on the sidewalls of the semiconductor stack, and has a plurality of N-type openings above the N-type semiconductor layer and a plurality of P-type openings above the P-type semiconductor layer; the N-type openings are arranged in the N-side region and the P-side region, and the P-type openings are arranged in the P-side region.

[0043] The first connecting electrode and the second connecting electrode are formed on the first insulating layer and are electrically connected to the N-type semiconductor layer and the P-type semiconductor layer respectively through the N-opening and the P-opening.

[0044] The first connecting electrode includes a main body portion located in the N-side region and a finger-shaped portion extending toward the P-side region. At least one P-opening is included between the finger-shaped portion and the edge of the P-side region to which the finger-shaped portion points. By adding a P-hole near the end of the finger-shaped electrode, current congestion is effectively reduced, current spreading is optimized, and more paths are provided for current to flow from the P-type electrode to the active layer, effectively reducing series resistance and operating voltage.

[0045] In some embodiments, the second connecting electrode has a first edge, a second edge, a third edge, and a fourth edge connected end to end; wherein, the first edge is the edge close to the finger-like portion of the first connecting electrode, the third edge is the edge of the finger-like portion pointing away from the N-side region, and the second edge is disposed opposite to the fourth edge and perpendicular to the third edge;

[0046] The P-opening includes a plurality of first P-openings and at least one second P-opening. The plurality of first P-openings are arranged sequentially near the first edge, and the second P-opening is located at the end of the finger-like portion and near the third edge. The distance between the second P-opening and the third edge is between 10 μm and 50 μm. By controlling the edge spacing between the second P-opening and the second connecting electrode, the current path and the utilization rate of the light-emitting area are optimized, while the risk of film breakage during deposition and encapsulation is reduced.

[0047] In some embodiments, the minimum distance between the P-opening and the finger-like portion is between 10 μm and 50 μm, in order to balance current injection efficiency with the risk of short circuits caused by excessively close proximity.

[0048] In some embodiments, the minimum distance between the first P-opening and the second P-opening is between 100 μm and 800 μm. By controlling the appropriate spacing between the P-openings, excessive overlap of current distribution or the appearance of blank areas can be avoided, balancing the current injection density between the center and the edge of the P-side region and optimizing the overall current distribution.

[0049] In some embodiments, the direction in which the third edge is located is defined as a first direction along the top view of the light-emitting diode, and a second direction is perpendicular to the first direction; the size of the second P-opening in the first direction is not less than the width of the finger-like portion in the first direction, so as to reduce local resistance and ensure the current diffusion efficiency of the second P-opening.

[0050] In some implementations, the direction in which the third edge is located is defined as a first direction along the top view direction of the light-emitting diode, and a second direction is perpendicular to the first direction;

[0051] The second P-opening is located on the center line perpendicular to the third edge, or is symmetrically distributed in the P-side region along the first direction with the center line as the axis;

[0052] Several first P openings are symmetrically distributed in the P-side region along a first direction with the center line as the axis. The symmetrical arrangement of the first P openings and the second P openings within their respective regions achieves symmetry in current distribution, avoiding localized overheating or uneven brightness caused by uneven current density.

[0053] In some embodiments, the P-opening includes at least two second P-openings, with the distance between adjacent second P-openings ranging from 100 μm to 500 μm, or the distance between adjacent second P-openings ranging from 10% to 50% of the length of the third edge. By optimizing the spacing between the multiple second P-openings, the continuity and uniformity of edge current injection are ensured.

[0054] In some embodiments, the direction from the N-side region toward the P-side region is the length direction of the core, and the length of the core is L; the finger-like portion of the first connecting electrode extending into the P-side region has a maximum distance L1, where L1 ≤ 2 / 5L. By limiting the extension length of the finger-like portion, electrical crosstalk in the N / P regions is prevented, ensuring reliable device performance.

[0055] In some embodiments, the first connecting electrode further includes a surrounding portion that extends from both sides of the main body portion toward the P-side region and surrounds the second connecting electrode to form a closed ring structure with the main body portion, further improving the uniformity of current spread.

[0056] In some embodiments, the P-opening portion further includes several third P-opening portions, which are arranged sequentially near the second edge, the third edge, and the fourth edge along the direction of the electrode edge. The three P-opening portions in different regions cooperate to reduce the current expansion blind zone and further optimize the current distribution.

[0057] In some embodiments, along the top view direction of the light-emitting diode, the third P-openings are arranged along the direction of the second edge and the fourth edge on the inner side of the corresponding electrode edge. The number of third P-openings on the inner side of each electrode edge does not exceed 8, so as to avoid weakening the mechanical strength and current conduction capability of the electrode due to too many openings. The distance between the third P-opening and its adjacent second connecting electrode is not less than 6 μm. The appropriate electrode edge spacing ensures insulation reliability and achieves a balance between improving current spread and maintaining the integrity of the electrode structure.

[0058] In some embodiments, adjacent third P openings on the inner side of each electrode edge are equally spaced with a spacing of not less than 20 μm, ensuring both current uniformity and the structural strength and reliability of the insulation layer.

[0059] In some embodiments, the minimum distance between the third P-opening and the first P-opening and the second P-opening is between 30 μm and 200 μm. This reasonable spacing optimizes current distribution and avoids generating new current unevenness.

[0060] In some embodiments, the light-emitting diode further includes:

[0061] The first pad electrode and the second pad electrode are formed on the N-type semiconductor layer and the P-type semiconductor layer, and are electrically connected to the first connection electrode and the second connection electrode, respectively.

[0062] Along the top view direction of the light-emitting diode, the projection of the second pad electrode and the projection of the P-opening do not overlap. The second pad electrode is divided into several independent pad portions by the finger-shaped portion of the first connecting electrode and the P-opening portion at its end. The independent pad portions are close to regular shapes to facilitate solder placement and stress distribution, ensuring that each pad portion still meets the packaging and soldering process requirements.

[0063] In some embodiments, the distance between the P-opening at the end of the finger portion and the pad portions on both sides is between 15 μm and 60 μm, so that there is sufficient structural strength between the P-opening and the separate pad portions on both sides.

[0064] In some embodiments, the minimum distance between adjacent pad portions is between 100 μm and 300 μm, providing suitable space for the extension of the finger portion of the first connecting electrode, while ensuring that the pads have sufficient contact area and good electrical performance.

[0065] In some implementations, the area of ​​the minimum pad portion is not less than 4% of the total area of ​​the light-emitting diode, ensuring that the pad has sufficient area to form a strong solder joint and avoid failure. The reasonable spacing between the pad portion and the P-opening can further balance the current density of the chip, reduce the operating voltage, and extend the service life.

[0066] In some embodiments, along the top view direction of the light-emitting diode, the P-opening further includes a third P-opening disposed between the edge of the second pad electrode and the edge of the second connecting electrode to optimize the current spread in the chip edge region. The distance between the third P-opening and its adjacent second pad electrode is not less than 6 μm to ensure the strength of the insulating layer structure and avoid its edge film layer breakage.

[0067] This application also provides a light-emitting device, the light-emitting device comprising:

[0068] Packaging substrate;

[0069] At least one light-emitting diode (LED) is disposed on the surface of the encapsulation substrate, and the encapsulation substrate and the electrode structure of the LED are electrically connected; the LED is any of the LEDs provided in the above-described technical solutions. Light-emitting devices equipped with the aforementioned LEDs have lower operating voltage and higher luminous efficacy, with the operating voltage reduced by up to 0.01V, better meeting the needs of high-end automotive and backlighting products.

[0070] The following specific embodiments illustrate the implementation of this application. Those skilled in the art can easily understand other advantages and effects of this application from the content disclosed in this specification. This application can also be implemented or applied through other different specific embodiments, and various details in this specification can also be modified or changed based on different viewpoints and applications without departing from the spirit of this application. It should be noted that, unless otherwise specified, the following embodiments and features in the embodiments can be combined with each other.

[0071] The composition and dopants of each layer of the light-emitting diode in this application can be analyzed by any suitable method, such as secondary ion mass spectrometry (SIMS). The thickness of each layer of the light-emitting diode in this application can be analyzed by any suitable method, such as transmission electron microscopy (TEM) or scanning electron microscopy (SEM), in conjunction with, for example, the depth positions of each layer on a SIMS spectrum.

[0072] Example 1:

[0073] This embodiment provides a light-emitting diode (LED), see [link]. Figures 1 to 7 The light-emitting diode (LED) includes at least a substrate 100, a semiconductor stack 200, a current spreading layer 300, a current blocking layer 400, a reflective layer 500, a first insulating layer 600, and an electrode structure disposed thereon. The LED's front projection along its top view is rectangular and divided into an N-side region and a P-side region disposed opposite to each other. Figure 1 The bottom edge in the diagram indicates the first direction, which is either the left-right direction or the chip width direction. The second direction is perpendicular to the first direction, which is either the up-down direction or the chip length direction. The specific structure and technical solution of the light-emitting diode provided in this embodiment will be described in detail below.

[0074] See Figures 1 to 3 The substrate 100 serves as the epitaxial growth substrate and can be made of a conductive, insulating, or light-transmitting material with excellent thermal conductivity, such as a sapphire substrate, silicon carbide substrate, gallium nitride substrate, zinc oxide substrate, gallium arsenide substrate, or silicon substrate. In this embodiment, the substrate 100 is a surface-patterned sapphire substrate to improve the epitaxial quality of the semiconductor stack 200 and facilitate efficient light emission from the semiconductor stack 200.

[0075] See also Figures 1 to 3A semiconductor stack 200 is disposed on a substrate 100. The semiconductor stack 200 includes stacked N-type semiconductor layer 210, active layer 220, and P-type semiconductor layer 230, all of which can be formed by methods such as metal-organic chemical vapor deposition (MOCVD), molecular beam epitaxy (MBE), hydride vapor deposition (HVPE), physical vapor deposition (PVD), or ion plating. The N-type semiconductor layer 210 is a layer that provides electrons and can be formed by implanting n-type dopants, such as Si, Ge, Se, Te, and C. The P-type semiconductor layer 230 is a layer that provides holes and can be formed by implanting p-type dopants, such as Mg, Zn, Be, Ca, Sr, and Ba. The active layer 220 is a layer in which electrons provided by the N-type semiconductor layer 210 and holes provided by the P-type semiconductor layer 230 recombine to output light of a predetermined wavelength. It can be a single-layer or multi-layer quantum well structure with alternating stacked potential well layers and barrier layers. The active layer 220 can use group III to group V compound semiconductor materials, such as at least one of InGaN / GaN, InGaN / InGaN, GaN / AlGaN, InAlGaN / GaN, GaAs(InGaAs) / AlGaAs, or GaP(InGaP) / AlGaP. The semiconductor stack 200 is etched to expose a plurality of first mesa on the upper surface of the N-type semiconductor layer 210 and a second mesa on the upper surface of the P-type semiconductor layer 230. The first mesa are distributed in the N-side and P-side regions for subsequent fabrication of structures such as N-openings and first connection electrodes.

[0076] See also Figures 1 to 3 A current spreading layer 300 is formed on the semiconductor stack 200, above the second mesa, to achieve higher current injection efficiency on the P-side and reduce optical loss. The material can be one or a combination of ITO, InO, SnO, CTO, AZO, ATO, GZO, ZnO, and GaP. Furthermore, the thickness of the current spreading layer 300 is between 5 nm and 50 nm.

[0077] See also Figures 1 to 3 A current blocking layer 400 is formed on the current spreading layer 300 using methods such as physical vapor deposition or chemical vapor deposition, and then patterned using photolithography and etching. The current blocking layer 400 includes one or more openings to expose the upper surface of the current spreading layer 300. The current blocking layer 400 may cover a portion of the surface of the current spreading layer 300, a portion of the surface of the P-type semiconductor layer 230 and the N-type semiconductor layer 210, and the sidewalls. In an optional embodiment, the current blocking layer 400 includes SiO2, SiN, or SiO2. x N yAt least one of TiO2, Si3N4, Al2O3, TiN, AlN, ZrO2, TiAlN, TiSiN, HfO, TaO2, and MgF2. In an optional embodiment, the current blocking layer 400 is a DBR structure formed by alternating stacks of first and second insulating films with different refractive indices. Further, the thickness of the current blocking layer 400 is between 200 nm and 1500 nm.

[0078] See also Figures 1 to 3 A reflective layer 500 is formed on the current blocking layer 400. The reflective layer 500 can be formed of one or more materials such as Au, W, Pt, Ir, Ag, Al, Cu, Ni, Ti, Cr and their alloys. The reflective layer 500 contacts the current spreading layer 300 through the opening of the current blocking layer 400. The current blocking layer 400 and the reflective layer 500 above it constitute an ODR structure to improve the light extraction efficiency of the product.

[0079] See Figures 1 to 7 A first insulating layer 600 is formed on the top and sidewalls of the semiconductor stack 200 by means of physical vapor deposition or chemical vapor deposition. The first insulating layer 600 includes SiO2, SiN, and SiO2. x N y At least one of TiO2, Si3N4, Al2O3, TiN, AlN, ZrO2, TiAlN, TiSiN, HfO, TaO2, and MgF2. In an optional embodiment, the first insulating layer 600 is a DBR structure consisting of alternating stacked first and second insulating films with different first and second refractive indices. The first insulating layer 600 is then patterned by photolithography and etching to obtain a plurality of N-type openings 610 above the N-type semiconductor layer 210 (first mesa) and a plurality of P-type openings 620 above the P-type semiconductor layer 230 (second mesa). See also... Figure 5 The N-opening 610 is arranged in the N-side region and the P-side region, and the P-opening 620 is arranged in the P-side region. The N-opening 610 includes a plurality of first N-openings 611 arranged in the N-side region and a plurality of second N-openings 612 arranged in the P-side region.

[0080] See Figure 1 and Figure 5 In an optional embodiment, the second N-opening 612 includes 1 to 5 rows. Specifically, the N-opening 610 includes four first N-openings 611 arranged along the first direction in the N-side region, and two rows of three second N-openings 612 arranged along the second direction in the P-side region. See also... Figure 1 and Figure 5The P-opening 620 includes a plurality of first P-openings 621 and at least one second P-opening 622. The first P-openings 621 are close to the N-side region, and the second P-openings 622 are far from the N-side region. Further, the P-side region includes two rows of second N-openings 612, with a distance d1 between each row ranging from 100 μm to 500 μm. This reasonable spacing further balances the current injection density between the edge and center regions. In an optional embodiment, the distance between each row of second N-openings 612 accounts for 10% to 50% of the length of the third edge 720c.

[0081] In an optional embodiment, the opening size of the second N-opening 612 is not less than 15 μm to ensure sufficient current injection area and reduce contact resistance. In an optional embodiment, the opening size of the first N-opening 611 is not less than 15 μm, and the first N-opening 611 has the same size and shape as the second N-opening 612.

[0082] See Figures 1 to 2 , Figure 5 In each column, the second N openings 612 are equidistantly arranged, and the distance d2 between adjacent second N openings 612 is between 80 μm and 400 μm, for example, their spacing is 100 μm, 140 μm, 200 μm, or 300 μm. Further, the distance d2 between adjacent second N openings 612 is between 100 μm and 300 μm, and the number of second N openings 612 in each column is 1 to 6, or more specifically, 2 to 3. For Figure 5 Each column shown includes an insulating layer structure with three second N openings 612, and the spacing d2 between adjacent second N openings 612 is between 100 μm and 180 μm, for example, 140 μm, to achieve better current spread and reduce local resistance.

[0083] See Figure 1 , Figure 5 and Figure 6 A first connecting electrode 710 and a second connecting electrode 720 are disposed on the first insulating layer 600. The first connecting electrode 710 is electrically connected to the N-type semiconductor layer 210 through the N-opening portion 610, and the second connecting electrode 720 is electrically connected to the P-type semiconductor layer 230 through the P-opening portion 620.

[0084] The first connecting electrode 710 includes a main body portion 711 located in the N-side region and finger-shaped portions 712 extending toward the P-side region. The main body portion 711 is located above the first N-opening portion 611 and fills the hole, while the finger-shaped portions 712 are located above the second N-opening portions 612 and fill the hole. Each finger-shaped portion 712 covers a row of second N-opening portions 612, that is, the number of finger-shaped portions 712 is the same as the number of rows of second N-opening portions 612, which is 1 to 5. Furthermore, each finger-shaped portion 712 covers 1 to 6 second N-opening portions 612. By arranging the position and number of finger-shaped portions 712 and second N-opening portions 612 in the above manner, the current extension path can be better optimized, and the series resistance and operating voltage can be reduced.

[0085] See Figure 1 , Figure 4 and Figure 6 The spacing d3 between adjacent finger portions 712 is between 100 μm and 500 μm, and the distance d4 between the second N opening 612 covered by each finger portion 712 and the edge of the finger portion 712 is between 10 μm and 50 μm. Further, for a light-emitting diode with 2 to 3 finger portions 712, the spacing d3 between adjacent finger portions 712 is between 100 μm and 300 μm, and the finger portions 712 are symmetrically arranged. The spacing between adjacent finger portions 712 is optimized according to the size of the light-emitting diode and the number of finger portions 712 to better balance the current injection density between the edge and center regions. In an optional embodiment, the ratio of the spacing d3 between adjacent finger portions 712 to the length of the third edge 720c is between 10% and 50%.

[0086] In an optional embodiment, at least one P-opening is included between the finger-like portion 712 and the edge of the P-side region pointed to by the finger-like portion 712, for example... Figures 1 to 5 The diagram shows two symmetrically arranged second P-openings 622. By adding second P-openings 622 near the ends of the finger electrodes, the second P-openings 622 work in conjunction with the first P-openings 621 near the N-side region to effectively reduce current congestion, optimize current expansion, and provide more paths for current to flow from the P-type electrode to the active layer, thereby reducing series resistance and operating voltage.

[0087] For ease of description, see Figure 6 The second connecting electrode 720 is defined to have a first edge 720a, a second edge 720b, a third edge 720c and a fourth edge 720d connected end to end. The first edge 720a is the edge close to the finger-shaped portion 712 of the first connecting electrode 710, the third edge 720c is the edge of the region away from the N side pointed to by the finger-shaped portion 712, and the second edge 720b is disposed opposite to the fourth edge 720d and perpendicular to the third edge 720c.

[0088] See Figure 1 and Figure 4 The first P-opening 621 is arranged near the first edge 720a at both ends of the P-side region, and the second P-opening 622 is disposed near the third edge 720c. The distance d5 between the second P-opening 622 and the third edge 720c is between 10μm and 50μm, for example, it can be 12μm, 15μm, 20μm, 30μm or 40μm. By controlling the edge spacing between the second P-opening 622 and the second connecting electrode 720, the current path and the utilization rate of the light-emitting area are optimized, while reducing the risk of edge film breakage during deposition and encapsulation. Further, the distance d5 between the second P-opening 622 and the third edge 720c is between 15μm and 35μm. The two second P-openings 622 have the same structure, are symmetrically distributed and are at the same distance from the third edge 720c.

[0089] See also Figure 1 and Figure 4 The minimum distance d4 between the second P-opening 622 and the finger-like portion 712 is between 10 μm and 50 μm, for example, it can be 12 μm, 15 μm, 20 μm, 30 μm, or 40 μm. If the distance between the second P-opening 622 and the finger-like portion 712 is too close, the edge structure is weak, and edge breakage will bring the risk of short circuit. If the distance is too far, on the one hand, the voltage reduction effect cannot be maximized, and on the other hand, the area between the finger-like portion 712 and the second P-opening 622 is lost. Furthermore, the distance between the two second P-openings 622 and the finger-like portion 712 is the same and between 15 μm and 35 μm, so as to balance the current injection efficiency and the short circuit risk caused by the close distance.

[0090] See Figure 5 There is a minimum distance d6 between the first P-opening 621 and the second P-opening 622, which is between 100μm and 800μm, for example, it can be 200μm, 400μm, 500μm or 600μm. If the distance is too small, it will lead to excessive local current density, which will not achieve a proper current distribution. The same applies if the distance is too large. That is, by controlling the appropriate spacing of the P-openings, excessive overlap of current distribution or blank areas can be avoided, the current injection density of the center and edge of the P-side region can be balanced, and the overall current distribution can be optimized. Furthermore, the distance d6 between the first P-opening 621 and the second P-opening 622 is between 200μm and 500μm.

[0091] See Figure 4The dimension d7 of the second P-opening 622 in the first direction is not less than the width d8 of the finger-like portion 712 in the first direction. Further, the width d8 of the finger-like portion 712 is between 10 μm and 200 μm, and the dimension d7 of the second P-opening 622 in the first direction is between 20 μm and 300 μm and greater than the width of the finger-like portion 712, to reduce local resistance and ensure the current diffusion efficiency of the second P-opening 622. For example, the width d8 of the finger-like portion 712 is 50 μm to 70 μm, and the dimension d7 of the second P-opening 622 is 90 μm to 100 μm. In an optional embodiment, the dimension of the second P-opening 622 in the first direction is increased by 30% to 80% compared to the width of the finger-like portion 712.

[0092] See Figure 1 , Figure 5 and Figure 6 The finger-shaped portions 712 have equal widths along their extension direction. Both the second P-opening portion 622 and the finger-shaped portions 712 are symmetrically distributed in the P-side region along the first direction with the core centerline as the axis. Furthermore, the first P-opening portion 621, the second P-opening portion 622, and the finger-shaped portions 712 are symmetrically distributed in the P-side region with the core centerline as the axis along the first direction to achieve symmetry in current distribution and avoid localized overheating or uneven brightness caused by uneven current density.

[0093] See Figure 5 In optional embodiments, the N-opening 610 is circular, elliptical, rectangular, or elongated. The N-opening 610 provided in this embodiment is a circular structure with an opening size of not less than 15 μm, ensuring sufficient current injection area and reducing contact resistance. Further, the opening size of the N-opening 610 is between 20 μm and 40 μm, for example, 22 μm, 25 μm, 30 μm, or 35 μm.

[0094] See Figure 5 In optional embodiments, the shape of the P-opening 620 is circular, elliptical, rectangular, or elongated. The P-opening 620 provided in this embodiment is a rectangular structure with an opening size between 20 μm and 300 μm. For example, the opening size of the first P-opening 621 is 50 μm × 80 μm, 60 μm × 100 μm, 90 μm × 180 μm, or 100 μm × 200 μm; the opening size of the second P-opening 622 is 30 μm × 90 μm, 60 μm × 60 μm, 60 μm × 90 μm, or 100 μm × 200 μm.

[0095] See Figures 1 to 7The P-aperture 620 includes at least two second P-apertures 622, with a distance d9 between adjacent second P-apertures 622 ranging from 100 μm to 500 μm. Further, for a light-emitting diode with 2 to 3 second P-apertures 622, the spacing d9 between adjacent second P-apertures 622 is between 100 μm and 300 μm, and the second P-apertures 622 are symmetrically arranged, each corresponding to a finger portion 712 and a row of second N-apertures 612. Further, the distance d6 between a second P-aperture 622 and its nearest first P-aperture 621 is between 30 μm and 200 μm. In an optional embodiment, the distance d9 between adjacent second P-apertures 622 is between 10% and 50% of the length of the third edge 720c. By optimizing the spacing between the multiple second P-apertures 622, the continuity and uniformity of edge current injection are ensured.

[0096] See Figure 6 The core has a length of L, and the finger-like portion 712 extending into the P-side region has a maximum distance L1, where L1 ≤ 2 / 5L. That is, the distance between the finger-like portion 712 and the third edge 720c is not less than 1 / 5 of the core length. By limiting the extension length of the finger-like portion 712, electrical crosstalk in the N / P region is prevented, ensuring reliable device performance. Sufficient space is also reserved for the second P-opening 622. Further, 0.15L ≤ L1 ≤ 0.35L.

[0097] See Figures 1 to 6 The first connecting electrode 710 also includes a surrounding portion 713, which extends from both sides of the main body portion 711 toward the P-side region and surrounds the second connecting electrode 720 to form a closed ring structure with the main body portion 711 to improve the uniformity of current spread. Further, see... Figure 4 The width d of the surrounding portion 713 10 Between 10μm and 50μm.

[0098] See Figures 1 to 3 A second insulating layer 800 is formed on the connecting electrode layer using physical vapor deposition or chemical vapor deposition. The second insulating layer 800 is then patterned using photolithography and etching to form openings, exposing the first connecting electrode 710 and the second connecting electrode 720. The material selection and structural configuration of the second insulating layer 800 are similar to those of the first insulating layer 600, and will not be described in detail here.

[0099] See Figures 1 to 4 , Figure 7A first pad electrode 910 and a second pad electrode 920 are formed on the second insulating layer 800 by electroplating, physical vapor deposition, or chemical vapor deposition. The first pad electrode 910 is located in the N-side region and electrically connected to the N-type semiconductor layer 210, and the second pad electrode 920 is located in the P-side region and electrically connected to the P-type semiconductor layer 230. The first pad electrode 910 is a single structural layer, while the second pad electrode 920 includes at least two pad portions, for example... Figure 7 The second pad electrode structure shown has three independent pad portions.

[0100] See Figure 1 Along the top-view direction of the LED, the projection of the second pad electrode 920 and the projection of the P-opening 620 do not overlap. The second pad electrode 920 is divided into several independent pad portions by the finger-shaped portion 712 of the first connecting electrode 710 and the second P-opening 622 at its end. The independent pad portions are nearly regular in shape to facilitate solder placement and stress distribution, ensuring that each pad portion still meets the requirements of the packaging soldering process. For example Figure 7 The pad structure shown has three independent rectangular pads that are symmetrically arranged in the P-side region.

[0101] See Figures 1 to 3 , Figure 7 The second pad electrode 920 has 2 to 6 pads to maintain electrode structure strength while ensuring die bonding. The area of ​​the smallest pad is not less than 4% of the total area of ​​the LED; for example, the smaller pads at both ends each account for approximately 10% of the total area of ​​the LED, ensuring that the pad has sufficient area to form a strong solder joint and avoid failure. Furthermore, the second pad electrode 920 has 2 to 4 pads, and the area of ​​the smallest pad is not less than 8% of the total area of ​​the LED. This structural optimization further improves die bonding, reduces solder void rate and cold solder joint probability, while improving heat dissipation performance, preventing localized overheating of the chip, and improving device reliability.

[0102] See Figures 1 to 4 Each adjacent pad portion has one and only one second P-opening 622. Arranging the pad portions and P-openings 620 at reasonable intervals can further balance the chip's current density, reduce the operating voltage, and extend the device's lifespan. Furthermore, the area between each pad portion on both sides and the first pad electrode 910 includes at least one first P-opening 621, for example... Figure 1 and Figure 4In the structure shown, no first P-opening 621 is provided between the pad portion in the middle and the first pad electrode 910, and a first P-opening 621 is provided between each pad portion on both sides and the first pad electrode 910.

[0103] See Figure 4 The distance d between the second P opening 622 and the pads on both sides 11 The distance between the second P-opening 622 and the pads on both sides is between 15μm and 60μm, and the spacing between them is equal; for example, this spacing can be 20μm, 25μm, 40μm, or 50μm. The distance between the second P-opening 622 and the pads on both sides should not be too small to ensure sufficient structural strength between the P-opening and the independent pads on both sides. Understandably, this distance should also not be too large, otherwise it will reduce the area utilization of the pads or the second P-opening 622. Further, the distance d between the second P-opening 622 and the pads on both sides... 11 Between 18μm and 40μm.

[0104] See Figure 4 and Figure 7 The minimum distance d between adjacent pads 12 Between 100μm and 300μm, if the distance between adjacent pads is too small, the width of the finger portion 712 will decrease, reducing the strength of the electrode structure; if the distance between adjacent pads is too large, it is equivalent to compressing the area of ​​the pad portion. Furthermore, the minimum distance d between adjacent pads... 12 The diameter is between 100μm and 200μm, such as 110μm, 120μm, 150μm or 180μm, to ensure that the finger portion 712 of the first connecting electrode 710 extends with a suitable arrangement space, while ensuring that the pad portion has sufficient contact area and good electrical performance.

[0105] Example 2:

[0106] This embodiment provides a light-emitting diode (LED), see [link]. Figure 8 and Figure 9 The light-emitting diode also includes a substrate 100, a semiconductor stack 200, a current spreading layer 300, a current blocking layer 400, a reflective layer 500, a first insulating layer 600, and an electrode structure disposed thereon. The similarities to Embodiment 1 of this light-emitting diode will not be repeated here; the differences between the light-emitting diode provided in this embodiment and Embodiment 1 will be described in detail below.

[0107] See Figure 8 and Figure 9A first insulating layer 600 is disposed above and on the sidewalls of the semiconductor stack 200, and then the first insulating layer 600 is patterned by photolithography and etching to obtain a plurality of N openings 610 above the N-type semiconductor layer 210 (first mesa) and a plurality of P openings 620 above the P-type semiconductor layer 230 (second mesa).

[0108] See Figure 8 The N-opening 610 includes a plurality of first N-openings 611 arranged along a first direction in the N-side region, and second N-openings 612 facing the P-side region but not arranged along a second direction. Meanwhile, the P-opening 620 includes a plurality of first P-openings 621 and a second P-opening 622, with the first P-openings 621 close to the N-side region and the second P-opening 622 far from the N-side region.

[0109] See Figure 8 and Figure 9 A first connecting electrode 710 and a second connecting electrode 720 are disposed on the first insulating layer 600. The first connecting electrode 710 includes a main body portion 711 located in the N-side region and finger-shaped portions 712 extending toward the P-side region. The extension direction of the finger-shaped portions 712 is in the same direction as the arrangement direction of the second N-opening portions 612. That is, the number and arrangement of the second N-opening portions 612 below each finger-shaped electrode 712 can be different. For example, the main body portion 711 is located above the first N-opening portion 611 and fills into the hole. The finger-shaped portions 712 first cover at least two second N-opening portions 612 from the N side to form a wider electrode layer. As it extends toward the P-side region, it gradually merges into a first finger-shaped portion 7121 located at the center line of the core. The second finger-shaped portions 7122 on both sides are symmetrically arranged and fill the second N-opening portions 612 on both sides. Furthermore, the distance d3 between the first finger portion 7121 and the second finger portions 7122 on both sides is between 100μm and 500μm, and the distance d4 between the second N opening 612 covered by each finger portion 712 and the edge of the finger portion 712 is between 10μm and 50μm.

[0110] In an alternative embodiment, the number of finger-like portions 712 is 3 to 5. For example... Figure 7 The diagram shows a first finger-shaped portion 7121 in the middle and second finger-shaped portions 7122 on each side, achieving the initial purpose of reducing series resistance and operating voltage. Each finger-shaped portion 712 covers 2 to 6 second N-shaped openings 612. By arranging the positions and numbers of the finger-shaped portions 712 and the second N-shaped openings 612 in the above manner, the current propagation path is further optimized.

[0111] In an optional embodiment, at least one P-opening is included between the finger-like portion 712 and the edge of the P-side region pointed to by the finger-like portion 712, for example... Figure 7 In the structure shown, a second P-opening 622 is added to the end of the first finger-shaped portion 7121, while the ends of the second finger-shaped portions 7122 on both sides do not have P-openings. The distance d5 between the second P-opening 622 and the third edge 720c is between 10μm and 50μm. The second P-opening 622 works in conjunction with the first P-opening 621 near the N-side region to effectively reduce current congestion and optimize the current spreading effect, thereby reducing resistance and operating voltage.

[0112] In an alternative embodiment, the minimum distance d4 between the second P opening 622 and the first finger-like portion 7121 is between 10 μm and 50 μm.

[0113] In an optional embodiment, the first finger-shaped portion 7121 located in the middle is the longest finger-shaped portion extending to the P-side region. The length of the first finger-shaped portion 7121 does not exceed 2 / 5 of the core length, that is, the distance between the first finger-shaped portion 7121 and the third edge 720c is not less than 1 / 5 of the core length. The extension length of the second finger-shaped portions 7122 located on both sides in the P-side region is less than that of the first finger-shaped portion 7121, and its length does not exceed 1 / 3 of the core length, in order to prevent affecting the pad structure and reducing the pad area.

[0114] In an optional embodiment, a minimum distance d6 is provided between the first P-opening 621 and the second P-opening 622, which is between 100 μm and 800 μm. The dimension d7 of the second P-opening 622 in the first direction is not less than the width d8 of the first finger-like portion 7121 in the first direction, in order to reduce local resistance and ensure the current diffusion efficiency of the second P-opening. Further, the width d8 of the first finger-like portion 7121 is between 10 μm and 200 μm, and the dimension d7 of the second P-opening 622 in the first direction is between 20 μm and 300 μm and is greater than the width of the finger-like portion 712.

[0115] See also Figure 8 and Figure 9 The first pad electrode 910 is located in the N-side region and electrically connected to the N-type semiconductor layer 210, while the second pad electrode 920 is located in the P-side region and electrically connected to the P-type semiconductor layer 230. The first pad electrode 910 is a single structural layer. The second pad electrode 920 is divided into two pad portions by a first finger-shaped portion 7121 and a second P-opening portion 622 at its end. The two pad portions are symmetrically arranged, and the area of ​​each pad portion is not less than 4% of the total area of ​​the light-emitting diode, ensuring that the pad portion has sufficient area to form a strong solder joint and avoid failure. Furthermore, the area of ​​each pad portion is not less than 10% of the total area of ​​the light-emitting diode.

[0116] See Figure 9 The distance d between the second P opening 622 and the pads on both sides 11 The distance is between 15μm and 60μm, and the spacing between the second P-opening 622 and the pad portions on both sides is equal. The minimum distance d between adjacent pad portions. 12 Between 100μm and 300μm.

[0117] Example 3:

[0118] This embodiment provides a light-emitting diode (LED). The similarities between this LED and those in Embodiments 1 and 2 will not be repeated here. The differences between the LED provided in this embodiment will be described in detail below.

[0119] See Figure 10 The N-opening 610 includes a plurality of first N-openings 611 arranged along a first direction in the N-side region, and a second N-opening 612 arranged toward the P-side region. Meanwhile, the P-opening 620 includes a plurality of first P-openings 621 and a second P-opening 622, the first P-openings 621 being symmetrically arranged along the first direction close to the N-side region, and the second P-openings 622 being away from the N-side region.

[0120] In an optional embodiment, the finger-like portion 712 includes a first finger-like portion 7121 located in the middle, and the extension length of the second finger-like portions 7122 on both sides does not exceed the first P opening 621, and the second finger-like portions 7122 on both sides are symmetrically arranged. The first finger-like portion 7121 located in the middle is the longest finger-like portion extending to the P-side region, and the length of the first finger-like portion 7121 does not exceed 2 / 5 of the core length, that is, the distance between the first finger-like portion 7121 and the third edge 720c is not less than 1 / 5 of the core length.

[0121] In an alternative embodiment, the minimum distance d4 between the second P opening 622 and the first finger-like portion 7121 is between 10 μm and 50 μm.

[0122] In an optional embodiment, there is a minimum distance d6 between the first P opening 621 and the second P opening 622, which is between 100μm and 800μm.

[0123] See also Figure 10The first pad electrode 910 is located in the N-side region and electrically connected to the N-type semiconductor layer 210, and the second pad electrode 920 is located in the P-side region and electrically connected to the P-type semiconductor layer 230. The first pad electrode 910 is a single structural layer, and the second pad electrode 920 is divided into two pad portions by the first finger-shaped portion 7121 and the second P-opening portion 622 at its end. The two pad portions are symmetrically arranged, and the distance d between the second P-opening portion 622 and the pad portions on both sides is... 11 The diameter is between 15μm and 60μm, and the spacing between the second P opening 622 and the pad portions on both sides is equal.

[0124] In an optional embodiment, since the extension length of the second finger-shaped portion 7122 does not exceed the first P-opening portion 621, each pad portion is a regular or approximately regular rectangular structure, and the area of ​​each pad portion is not less than 8% of the total area of ​​the light-emitting diode, so that each pad portion has sufficient area to form a strong solder joint and avoid failure. Further, the area of ​​each pad portion is not less than 15% of the total area of ​​the light-emitting diode.

[0125] Compared to the structure of the light-emitting diode provided in Embodiment 1, by adding a third P-opening 623 while keeping the structures of the first connecting electrode 710 and the second connecting electrode 720 unchanged, the area of ​​the pad portion will be compressed. However, it is still necessary to ensure that the area of ​​the minimum pad portion is not less than 4% of the total area of ​​the light-emitting diode, ensuring that the pad portion has sufficient area to form a strong solder joint and avoid failure. Furthermore, the number of pad portions of the second pad electrode 920 is 2 to 4, and the area of ​​the minimum pad portion is not less than 8% of the total area of ​​the light-emitting diode.

[0126] Example 4:

[0127] This embodiment provides a light-emitting diode (LED), see [link]. Figure 11 and Figure 12 The light-emitting diode also includes a substrate 100, a semiconductor stack 200, a current spreading layer 300, a current blocking layer 400, a reflective layer 500, a first insulating layer 600, and an electrode structure disposed thereon. The similarities to Embodiment 1 of this light-emitting diode will not be repeated here; the differences between the light-emitting diode provided in this embodiment and Embodiment 1 will be described in detail below.

[0128] In some embodiments, along the top view direction of the light-emitting diode, the P-opening 620 further includes a third P-opening 623 disposed between the edge of the second pad electrode 920 and the edge of the second connecting electrode 720. The third P-opening 623 is close to the second edge 720b, the third edge 720c and the fourth edge 720d and is arranged sequentially along the edge direction of the electrode. The three P-openings in different regions work together to further optimize the current spread in the chip edge region.

[0129] See Figure 12 Along the top view direction of the light-emitting diode, the third P-openings 623 are arranged along the directions of the second edge 720b and the fourth edge 720d on the inner side of the corresponding electrode edge and the outer side of the second pad electrode 920. The number of third P-openings 623 on the inner side of each electrode edge does not exceed eight, for example... Figure 12 The pad portion shown has a structure with four third P-openings 623 on the left side, which avoids weakening the mechanical strength and current conduction capability of the electrode due to excessive openings. Furthermore, the distance d between the third P-opening 623 and the edge of its adjacent second connecting electrode... 13 The distance d between the third P-opening 623 and the edge of its adjacent pad portion is not less than 6μm. 14 The electrode edge spacing should be no less than 6μm to ensure insulation reliability, avoid edge film breakage, and achieve the best balance between improving current spread and maintaining electrode structural integrity.

[0130] See Figure 11 The extension distance of the finger-shaped portion 712 in the P-side region does not exceed 4 / 5 of the core length. The two finger-shaped portions 712 are symmetrically arranged and have the same size and structure. The number of pad portions of the second pad electrode 920 is determined by the finger-shaped portion 712 and the second P-opening portion 622 at its end, typically 2 to 6. Since a third P-opening portion 623 is added along the edge of the P-side region, the area of ​​the second pad electrode 920 is relatively reduced while maintaining the same structure as the light-emitting diode provided in Embodiment 1. To ensure the die bonding effect while maintaining the strength of the electrode structure, the area of ​​the minimum pad portion is not less than 4% of the total area of ​​the light-emitting diode, and the number of pad portions is preferably 2 to 4. Furthermore, the area of ​​the smaller pad portions at both ends accounts for at least 10% of the total area of ​​the light-emitting diode, ensuring that the pad portion has sufficient area to form a strong solder joint and avoid failure.

[0131] In an optional embodiment, adjacent third P openings 623 on the inner side of each electrode edge are equally spaced with a spacing d. 15 The thickness should be no less than 20μm, ensuring both current uniformity and the structural strength and reliability of the insulation layer.

[0132] In an optional embodiment, the third P-opening 623 is a small ellipse or circle to better accommodate the narrow space at the edge of the electrode. Its arrangement can be strictly equidistant, or the spacing can be appropriately increased in the regions adjacent to the first P-opening 621 and the second P-opening 622 at both ends of each edge.

[0133] In an optional embodiment, the minimum distance between the third P-opening 623 and the first P-opening 621 and the second P-opening 622 is between 30 μm and 200 μm. The spacing between the three P-openings with different structures and different regions is reasonably set to avoid generating new current unevenness.

[0134] Example 5:

[0135] This embodiment provides a light-emitting diode (LED), see [link]. Figure 13 and Figure 14 The light-emitting diode also includes a substrate 100, a semiconductor stack 200, a current spreading layer 300, a current blocking layer 400, a reflective layer 500, a first insulating layer 600, and an electrode structure disposed thereon. The similarities to Embodiment 1 of this light-emitting diode will not be repeated here; the differences between the light-emitting diode provided in this embodiment and Embodiment 1 will be described in detail below.

[0136] See Figure 13 and Figure 14 The second N openings 612 in each column are equally spaced, and the number of second N openings 612 in each column is 1 to 3. The distance d2 between adjacent second N openings 612 is between 80 μm and 400 μm, for example, their spacing is 100 μm, 140 μm, 200 μm or 300 μm. For Figure 13 Each column shown includes an insulating layer structure with two second N openings 612. The spacing d2 between adjacent second N openings 612 is between 180 μm and 300 μm, for example, it can be 200 μm, 240 μm, 260 μm or 280 μm, in order to achieve better current spread and reduce local resistance.

[0137] See Figure 13 and Figure 14The distance d5 between the second P-opening 622 and the third edge 720c is between 10 μm and 50 μm, and the minimum distance d4 between the second P-opening 622 and the finger-like portion 712 is between 10 μm and 50 μm. It is understandable that reducing the number of second N-openings 612 while reducing their arrangement distance towards the P-side region, i.e., shortening the length of the finger-like portion 712 of the first connecting electrode 710, increases the distance between the finger-like portion 712 and the third edge 720c of the second connecting electrode 720. To improve the current spreading effect of the second P-opening 622, by increasing the length of the second P-opening 622 along the first direction, the opening area of ​​the second P-opening 622 can be further enlarged compared to the opening area in Embodiment 1. Furthermore, the opening length d of the second P-opening 622 along the first direction... 16 The second P-opening 622 is formed by an opening length d7 greater than or equal to the length along the second direction, which maximizes the utilization of the P-side area and provides a wide edge current injection band when the finger electrode extension is short.

[0138] See Figure 13 and Figure 14 A minimum distance d6 exists between the first P-opening 621 and the second P-opening 622, which is between 100 μm and 800 μm. Controlling the appropriate spacing between the P-openings can prevent excessive overlap of current distributions or the appearance of blank areas, balance the current injection density between the center and the edge of the P-side region, and optimize the overall current distribution. Furthermore, the distance d6 between the first P-opening 621 and the second P-opening 622 is between 200 μm and 500 μm.

[0139] Understandably, the number of pad portions of the second pad electrode 920 is determined by the finger portion 712 and the second P-opening portion 622, typically ranging from 2 to 6, to maintain electrode structure strength while ensuring die bonding effectiveness. The area of ​​the smallest pad portion is not less than 4% of the total area of ​​the LED; for example, the smaller pad portions at both ends should each account for at least 10% of the total area of ​​the LED, to improve die bonding effectiveness, reduce solder void rate and cold solder joint probability, while also improving heat dissipation performance, avoiding localized overheating of the chip, and improving device quality reliability.

[0140] Example 5:

[0141] See Figure 15This embodiment provides a light-emitting device 10, which is a flip-chip LED product, including a packaging substrate 101; at least one light-emitting diode disposed on the surface of the packaging substrate 101, and the packaging substrate 101 and the electrode structure of the light-emitting diode are electrically connected. The light-emitting element 102 is any of the light-emitting diodes provided in Embodiments 1 to 4. The light-emitting device configured with the above-mentioned light-emitting diode has a lower operating voltage and higher luminous efficacy. The operating voltage can be reduced by up to 0.01V, which can better meet the needs of high-end automotive and backlight products.

[0142] In summary, the light-emitting diode and light-emitting device provided in this application have high industrial application value because they effectively overcome the various shortcomings of the prior art.

[0143] The above embodiments are merely illustrative of the principles and effects of this application and are not intended to limit this application. Any person skilled in the art can modify or alter the above embodiments without departing from the spirit and scope of this application. Therefore, all equivalent modifications or alterations made by those skilled in the art without departing from the spirit and technical concept disclosed in this application should still be covered by the claims of this application.

Claims

1. A light-emitting diode, divided along its top view into an N-side region and a P-side region arranged opposite to each other, characterized in that, The light-emitting diode includes at least: A semiconductor stack, comprising an N-type semiconductor layer, an active layer, and a P-type semiconductor layer stacked sequentially; A first insulating layer is disposed above and on the sidewalls of the semiconductor stack, and has a plurality of N-type openings above the N-type semiconductor layer and a plurality of P-type openings above the P-type semiconductor layer; the N-type openings are arranged in the N-side region and the P-side region, and the P-type openings are arranged in the P-side region. The first connecting electrode and the second connecting electrode are formed on the first insulating layer and are electrically connected to the N-type semiconductor layer and the P-type semiconductor layer respectively through the N-opening and the P-opening. The first connecting electrode includes a main body portion located in the N-side region and a finger-shaped portion extending toward the P-side region, wherein at least one P-opening is included between the finger-shaped portion and the edge of the P-side region to which the finger-shaped portion points.

2. The light-emitting diode according to claim 1, characterized in that, The second connecting electrode has a first edge, a second edge, a third edge, and a fourth edge connected end to end; wherein, the first edge is the edge close to the finger-shaped portion of the first connecting electrode, the third edge is the edge of the finger-shaped portion pointing away from the N-side region, and the second edge is disposed opposite to the fourth edge and perpendicular to the third edge; The P-opening portion includes a plurality of first P-opening portions and at least one second P-opening portion. The plurality of first P-opening portions are arranged sequentially near the first edge, and the second P-opening portion is located at the end of the finger-like portion and is disposed near the third edge. The distance between the second P-opening portion and the third edge is between 10 μm and 50 μm.

3. The light-emitting diode according to claim 1, characterized in that, The minimum distance between the P-opening portion and the finger-like portion is between 10 μm and 50 μm.

4. The light-emitting diode according to claim 2, characterized in that, The minimum distance between the first P-opening and the second P-opening is between 100 μm and 800 μm.

5. The light-emitting diode according to claim 2, characterized in that, Along the top view direction of the light-emitting diode, the direction in which the third edge is located is defined as the first direction, and the second direction is perpendicular to the first direction; the size of the second P opening in the first direction is not less than the width of the finger-like portion in the first direction.

6. The light-emitting diode according to claim 2, characterized in that, Along the top view direction of the light-emitting diode, the direction where the third edge is located is defined as the first direction, and the second direction is perpendicular to the first direction; The second P-opening is located on the center line perpendicular to the third edge, or is symmetrically distributed in the P-side region along the first direction with the center line as the axis; Several of the first P openings are symmetrically distributed in the P-side region along the first direction with the center line as the axis.

7. The light-emitting diode according to claim 2, characterized in that, The P-opening includes at least two second P-openings, with the distance between adjacent second P-openings ranging from 100 μm to 500 μm, or the distance between adjacent second P-openings ranging from 10% to 50% of the length of the third edge.

8. The light-emitting diode according to claim 1, characterized in that, The direction from the N-side region toward the P-side region is the length direction of the core, and the length of the core is L; the finger-like portion of the first connecting electrode extending to the P-side region has a maximum distance L1, wherein L1≤2 / 5L.

9. The light-emitting diode according to claim 1, characterized in that, The first connecting electrode also includes a surrounding portion that extends from both sides of the main body portion toward the P-side region and surrounds the second connecting electrode to form a closed ring structure with the main body portion.

10. The light-emitting diode according to claim 2, characterized in that, The P-opening portion also includes several third P-opening portions, which are arranged sequentially near the second edge, the third edge, and the fourth edge, along the direction of the electrode edge.

11. The light-emitting diode according to claim 10, characterized in that, Along the top view direction of the light-emitting diode, the third P-openings are arranged along the direction of the second edge and the fourth edge on the inner side of the corresponding electrode edge, the number of third P-openings on the inner side of each electrode edge does not exceed 8, and the distance between the third P-opening and its adjacent second connecting electrode is not less than 6 μm.

12. The light-emitting diode according to claim 10, characterized in that, The adjacent third P openings on the inner side of each electrode edge are equally spaced, with a spacing of not less than 20 μm.

13. The light-emitting diode according to claim 10, characterized in that, The minimum distance between the third P-opening and the first P-opening and the second P-opening is between 30 μm and 200 μm.

14. The light-emitting diode according to claim 1, characterized in that, The light-emitting diode also includes: The first pad electrode and the second pad electrode are formed on the N-type semiconductor layer and the P-type semiconductor layer, and are electrically connected to the first connection electrode and the second connection electrode, respectively. Along the top view direction of the light-emitting diode, the projection of the second pad electrode and the projection of the P-opening do not overlap. The second pad electrode is divided into several independent pad portions by the finger-shaped portion of the first connecting electrode and the P-opening at its end.

15. The light-emitting diode according to claim 14, characterized in that, The distance between the P-opening at the end of the finger-shaped portion and the pad portions on both sides is between 15 μm and 60 μm.

16. The light-emitting diode according to claim 14, characterized in that, The minimum distance between adjacent pad portions is between 100 μm and 300 μm.

17. The light-emitting diode according to claim 14, characterized in that, The area of ​​the minimum pad portion shall not be less than 4% of the total area of ​​the light-emitting diode.

18. The light-emitting diode according to claim 14, characterized in that, Along the top view direction of the light-emitting diode, the P-opening portion further includes a third P-opening portion disposed between the edge of the second pad electrode and the edge of the second connecting electrode, and the distance between the third P-opening portion and its adjacent second pad electrode is not less than 6 μm.

19. A light-emitting device, characterized in that, The light-emitting device includes: Packaging substrate; At least one light-emitting diode is disposed on the surface of the packaging substrate, and the packaging substrate and the electrode structure of the light-emitting diode are electrically connected; the light-emitting diode is the light-emitting diode according to any one of claims 1 to 18.

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