Semiconductor device

Abstract

A semiconductor device includes: a housing defining an internal space; a support bracket configured to slide within the internal space in a first direction from a first end portion of the housing to a second end portion of the housing; a substrate on a surface of the support bracket; one or more semiconductor elements mounted on the substrate; a heat dissipation member between the inner surface of the case and the one or more semiconductor elements; and one or more inclined surfaces within the housing. The one or more inclined surfaces are configured to move a surface of the support bracket toward an inner surface of the housing facing the surface of the support bracket based on the support bracket sliding on the one or more inclined surfaces in the first direction within the interior space.

Description

Cross-reference to related applications

[0001] This application claims the benefit of Korean Patent Application No. 10-2024-0144276, filed with the Korean Intellectual Property Office on October 21, 2024, the disclosure of which is incorporated herein by reference in its entirety. Technical Field

[0002] Overall, this disclosure relates to a semiconductor device with excellent thermal stability as well as excellent assemblability and processability. Background Technology

[0003] As electronic products become smaller and more powerful, the requirements for their thermal stability are becoming increasingly stringent. For example, for electronic products that include multiple semiconductor components (such as semiconductor devices), such as solid-state drives or solid-state disks (SSDs), smartphones, and laptops, technologies are being developed to dissipate heat generated in the internal electronic components through heat sinks. Summary of the Invention

[0004] According to some embodiments, this disclosure relates to a semiconductor device comprising: a housing defining an internal space; a support bracket configured to slide within the internal space along a first direction from a first end of the housing to a second end of the housing; a substrate on a surface of the support bracket; one or more semiconductor elements mounted on the substrate; a heat dissipation member between an inner surface of the housing and the one or more semiconductor elements; and one or more inclined surfaces within the housing, wherein the one or more inclined surfaces are configured to move towards an inner surface of the housing facing the support bracket based on the sliding of the support bracket within the internal space along the first direction on the one or more inclined surfaces.

[0005] According to some embodiments, this disclosure relates to a semiconductor device comprising: a substrate; one or more semiconductor elements mounted on the substrate; a support bracket on which the substrate is mounted; a housing configured to receive the support bracket; a heat dissipation member between an inner surface of the housing and the one or more semiconductor elements; and an inclined surface within the housing, the inclined surface being inclined relative to a lower surface of the support bracket, and the support bracket being configurable to slide from a first position spaced apart from the inclined surface to a second position contacting the inclined surface, wherein the heat dissipation member is spaced apart from the housing in the first position and may contact the housing in the second position.

[0006] According to some embodiments, this disclosure relates to a semiconductor device, the semiconductor device comprising: a substrate; a first semiconductor element and a second semiconductor element mounted on the substrate along a first direction; a support bracket on which the substrate is mounted, the support bracket including a first pressing portion below the first semiconductor element and a second pressing portion below the second semiconductor element; a housing having an opening on one side of the housing, the support bracket being configured to be inserted into the housing along the first direction through the opening; a heat dissipation member having a first surface in contact with the first semiconductor element and the second semiconductor element and a second surface in contact with the housing; a first inclined surface within the housing, the first inclined surface being configured to move the first pressing portion of the support bracket; and a second inclined surface within the housing, the second inclined surface being configured to move the second pressing portion of the support bracket. Attached Figure Description

[0007] The exemplary embodiments will be more clearly understood from the following detailed description taken in conjunction with the accompanying drawings.

[0008] Figure 1 This is a perspective view of an example of a semiconductor device according to some implementation methods.

[0009] Figure 2 This is an exploded perspective view of an example of a semiconductor device according to some implementation methods.

[0010] Figure 3 This is a cross-sectional view showing an example of the state of a semiconductor device before the support bracket is coupled to the housing, according to some embodiments.

[0011] Figure 4 This is a cross-sectional view showing an example of a support bracket coupled to a housing in a semiconductor device according to some embodiments.

[0012] Figure 5 This is a cross-sectional view of an example of a semiconductor device according to some implementation methods.

[0013] Figure 6 This is a cross-sectional view of an example of a semiconductor device according to some implementation methods.

[0014] Figure 7 This is an exploded perspective view of an example of a semiconductor device according to some implementation methods.

[0015] Figure 8 This is a reference diagram showing an example of the arrangement of the pressing part and the inclined surface according to some embodiments.

[0016] Figure 9 This is a cross-sectional view of an example of the state of a semiconductor device before the support bracket is coupled to the housing, according to some implementation methods.

[0017] Figure 10 This is a cross-sectional view of an example of a support bracket coupled to a housing in a semiconductor device according to some embodiments.

[0018] Figure 11 A partial cross-sectional view is shown of an example of an auxiliary frame included in a semiconductor device according to some embodiments.

[0019] Figure 12 A partial cross-sectional view of an example of a semiconductor device according to some embodiments is shown. Detailed Implementation

[0020] In the following text, exemplary embodiments will be described in detail with reference to the accompanying drawings.

[0021] In this disclosure, unless the context clearly defines otherwise, singular expressions include plural expressions. It should be understood that terms such as “comprising or including” and “consisting of” are intended to indicate the presence of the features, numbers, steps, operations, elements, components or combinations thereof described in this disclosure, and are not intended to preclude the possibility of the presence or addition of one or more other features, numbers, steps, operations, elements, components or combinations thereof.

[0022] Furthermore, terms such as upper side, top, above, lower side, bottom, side surface, front surface, and back surface used below are based on the orientation shown in the figures. When the orientation of the corresponding object changes, it may be represented in other ways. For clarity, the shape or size of elements in the figures may be exaggerated.

[0023] Figure 1 This is a perspective view of an example of a semiconductor device according to some implementation methods. Figure 2 It is an exploded perspective view of a semiconductor device according to some implementation methods.

[0024] exist Figure 1 and Figure 2 In the semiconductor device 10, the semiconductor device 10 may include: a substrate 200 on which one or more electronic components 210 are mounted; a heat dissipation member 500 for dissipating heat from the electronic components 210; and a housing 100 for accommodating the substrate 200 and the heat dissipation member 500.

[0025] In some embodiments, semiconductor device 10 may be a memory device capable of storing data. For example, semiconductor device 10 may be a portable solid-state drive or solid-state disk (SSD) that a user can carry and use. In some embodiments, semiconductor device 10 may be a memory device fixed to an external device.

[0026] exist Figure 2In this semiconductor device 10, one or more electronic components 210 may be disposed on a substrate 200 included in the semiconductor device 10. For example, multiple electronic components 210 may be disposed at different locations on the substrate 200. In some embodiments, at least one of the multiple electronic components 210 disposed on the substrate 200 may be a semiconductor package including one or more semiconductor elements. For example, the semiconductor elements may include non-volatile memory chips, buffer memory chips, or passive components. Non-volatile memory chips may include input and output signals and may be electrically connected to input / output pads of the substrate 200. Non-volatile memory chips may be, for example, NAND or vertical NAND (VNAND) flash memory chips. Buffer memory chips may be volatile memory chips and may be, for example, dynamic random access memory (DRAM), phase-change random access memory (PRAM), resistive random access memory (RRAM), ferroelectric random access memory (FeRAM), or magnetic random access memory (MRAM) chips. Passive components may include at least one of resistors, capacitors, inductors, thermistors, oscillators, ferrite beads, antennas, varistors, and crystals. However, passive components are not limited to this and can be any other passive component.

[0027] In some embodiments, the plurality of semiconductor elements disposed on the substrate 200 can be of different types. For example, one of the plurality of semiconductor elements can be a non-volatile memory chip, and another can be a buffer memory chip.

[0028] exist Figure 2 In this design, at least one of the multiple electronic components 210 disposed on the substrate 200 can be a controller capable of controlling semiconductor components. The controller may include a central processing unit (CPU), internal memory, a buffer memory control unit, a host interface, and a flash memory interface. The controller may be electrically connected to the semiconductor components. The controller may contain a program that allows it to send signals to and receive signals from external devices according to the Serial Advanced Technology Attachment (SATA) standard, the Parallel Advanced Technology Attachment (PATA) standard, or the Small Computer System Interface (SCSI) standard. Here, the SATA standard may encompass all standards in the SATA family, such as SATA-1, SATA-2, SATA-3, and external SATA (e-SATA). The PATA standard may encompass all standards in the Integrated Drive Circuit (IDE) family, such as IDE and Enhanced IDE (E-IDE).

[0029] In some embodiments, at least one of the plurality of electronic components 210 disposed on the substrate 200 may be a communication chip for transmitting signals between the semiconductor component and an external device, or a sensor chip for monitoring the state of the semiconductor component.

[0030] Multiple electronic components 210 disposed on the substrate 200 may have different thicknesses. Here, the "thickness" of the electronic component 210 may refer to the thickness of the substrate 200. Figure 1 and Figure 2 The length in the second direction (D2 direction).

[0031] Figure 1 and Figure 2 The number, size, thickness, and arrangement of the electronic components 210 shown are merely examples, and this disclosure is not limited thereto.

[0032] exist Figure 2 In this design, substrate 200 can be a printed circuit board (PCB) having a base layer and a wiring layer. For example, substrate 200 can be a double-sided PCB or a multilayer PCB. The wiring layer of substrate 200 can include conductive materials, such as aluminum (Al), copper (Cu), nickel (Ni), or tungsten (W). Multiple electronic components 210 mounted on substrate 200 can be electrically connected to each other through the wiring layer of substrate 200.

[0033] The substrate 200 may include a connector 220 on the side connected to an external device. The connector 220 may be exposed outside the housing 100 when the substrate 200 is housed within the housing 100. Through the connector 220, the semiconductor device 10 may send electrical signals to and receive electrical signals (e.g., control signals, data input and output signals, and power signals) from the external device.

[0034] The housing 100 can form the exterior of the semiconductor device 10 and can form an internal space therein to accommodate the substrate 200. For example, the housing 100 may include a flat upper frame and a lower frame, as well as a plurality of side frames connecting the upper frame and the lower frame.

[0035] In some embodiments, the housing 100 may have a single-frame structure, wherein the upper frame, lower frame, and side frames are integrally formed. The housing 100 with a single-frame structure can be manufactured quickly and efficiently using extrusion molding of metallic materials. However, the structure of the housing 100 is not limited to the above description and may also have an upper and lower frame combined with each other.

[0036] The housing 100 may be made of a material with high thermal conductivity, so that heat generated in the electronic components 210 disposed within the housing 100 can be properly dissipated. The housing 100 may be made of a single material or a combination of different materials. For example, the housing 100 may include metals, carbon-based materials, polymers, or combinations thereof.

[0037] exist Figure 2In this housing, the substrate 200 can be inserted into the housing 100 and placed on the support bracket 300. The support bracket 300 can be a movable substrate support structure for supporting the substrate 200, and can easily insert the substrate 200 into the housing 100 while protecting the substrate 200. The support bracket 300 can be made of a material with high structural rigidity and good thermal conductivity, such as metal, carbon-based material, polymer, or a combination thereof.

[0038] The support bracket 300 can be slidably inserted into the housing 100 to couple to the housing 100. Since the support bracket 300 is fixed to the housing 100, the base plate 200 placed on the support bracket 300 can also be fixed and accommodated within the housing 100.

[0039] The support bracket 300 can be moved by sliding along a first direction (D1 direction) from one end of the housing 100 to the other end to couple to the housing 100. For example, in Figure 2 In this configuration, a first opening 110 may be formed at one end of the housing 100 along a first direction (D1 direction), and a second opening 120 may be formed at the other end of the housing 100 along the first direction (D1 direction). A support bracket 300 may be inserted through the first opening 110 of the housing 100 along the first direction (D1 direction) to couple to the housing 100.

[0040] The support bracket 300 can be mechanically interlocked and fixed to the housing 100. In some embodiments, the support bracket 300 can be screwed to the housing 100 via coupling holes 130 provided in the housing 100, or it can be fixed to the housing 100 by adhesive bonding. However, the coupling method between the support bracket 300 and the housing 100 is not limited to the above description, and can be any method in which the support bracket 300 is fixed to the housing 100.

[0041] exist Figure 2 When the support bracket 300 is inserted into the housing 100 along the first direction (D1 direction), the flange portion 310 formed at the end of the support bracket 300 can close the first opening portion 110 of the housing 100.

[0042] exist Figure 2In this embodiment, the auxiliary bracket 400 can be coupled to the second opening 120 of the housing 100. For example, the auxiliary bracket 400 can be inserted by sliding into and coupling to the second opening 120 of the housing 100 in a direction opposite to the insertion direction of the support bracket 300 (e.g., the D1 direction). The auxiliary bracket 400 can be mechanically interlocked and fixed to the housing 100. In some embodiments, the auxiliary bracket 400 can be screwed to the housing 100 via a coupling hole 130 provided in the housing 100, or it can be fixed to the housing 100 by adhesive bonding. However, the coupling method between the auxiliary bracket 400 and the housing 100 is not limited to the above description, and can be any method in which the auxiliary bracket 400 can be fixed to the housing 100.

[0043] exist Figure 2 In this embodiment, a connector hole 410 may be provided on the auxiliary bracket 400, which is configured to expose the connector 220. However, the connector 220 may be provided at different locations on the substrate 200, and correspondingly, the position of the connector hole 410 may also be varied. For example, depending on the position of the connector 220, the connector hole 410 may be formed on the housing 100 or the support bracket 300.

[0044] In some embodiments, the semiconductor device 10 may include a heat dissipation member 500 for smoothly dissipating heat from electronic components 210 disposed on the substrate 200. The heat dissipation member 500 may be disposed above the substrate 200 to contact one or more electronic components 210 mounted on the substrate 200. For example, the heat dissipation member 500 may be configured to physically and thermally contact the upper surface of one or more electronic components 210 mounted on the substrate 200, and may be configured to absorb heat generated in the electronic components 210 and release it outward.

[0045] The heat dissipation component 500 may include a metal material or a thermal interface material (TIM) with excellent thermal conductivity. For example, the heat dissipation component 500 may be a pad-type or sheet-like component made of TIM.

[0046] exist Figure 2 In this configuration, when the support bracket 300 is coupled to the housing 100, the heat dissipation member 500 can be in contact with both the housing 100 and the electronic components 210 of the substrate 200. For example, when the support bracket 300 is coupled to the housing 100, one surface of the heat dissipation member 500 can be in thermal contact with the electronic components 210, and the other surface of the heat dissipation member 500 can be in thermal contact with the inner surface of the housing 100. Since the heat dissipation member 500 is disposed between the electronic components 210 and the housing 100, the heat generated in the electronic components 210 can be quickly dissipated to the outside of the semiconductor device 10 through the heat dissipation member 500 and through the housing 100.

[0047] exist Figure 1 and Figure 2 In this configuration, the semiconductor device 10 may have a structure with an inclined surface 420. When the support bracket 300 is inserted into the housing 100, this structure allows the heat dissipation member 500 disposed above the substrate 200 to come into close contact with the inner surface of the housing 100. For example, the support bracket 300 can be inserted by sliding into the housing 100, forming a predetermined gap space between the heat dissipation member 500 and the housing 100. During insertion, the support bracket 300 can rise upward along the inclined surface 420 disposed within the housing 100 and move slightly towards the inner surface of the housing 100 facing the inclined surface 420. Accordingly, the support bracket 300 can be coupled to the housing 100 while the heat dissipation member 500 and the housing 100 are in close contact with each other.

[0048] With the aforementioned inclined surface 420 structure, the semiconductor device 10 can prevent the heat dissipation component 500 from being damaged by friction with the inner surface of the housing 100 when the substrate 200 and the support bracket 300 supporting the substrate 200 are inserted into the housing 100. Furthermore, by ensuring that the heat dissipation component 500 is in full and tight contact with the housing 100 when the support bracket 300 is inserted into the housing 100, heat dissipation efficiency can be improved.

[0049] In the following text, reference will be made to Figure 3 and Figure 4 The coupling structure of the inclined surface 420 provided in the semiconductor device 10 is described in more detail.

[0050] Figure 3 This is an example cross-sectional view showing an example of the state of a semiconductor device 10 before the support bracket 300 is coupled to the housing 100 according to some embodiments. Figure 4 This is an example cross-sectional view showing an example of the state in which a support bracket 300 in a semiconductor device 10 is coupled to a housing 100 according to some embodiments.

[0051] because Figure 3 and Figure 4 The semiconductor device 10 in the middle can be with Figure 1 and Figure 2 Corresponding to semiconductor device 10 in the text, therefore the part about... Figure 1 and Figure 2 The description is a repetitive description.

[0052] In some embodiments, the support bracket 300 can be moved by sliding in a first direction (D1 direction) while supporting the base plate 200 to couple to the housing 100. For example, an inclined surface 420 may be formed within the housing 100. Figure 3 and Figure 4In this configuration, an inclined surface 420 configured to contact the support bracket 300 may be formed in the portion of the auxiliary bracket 400 located inside the housing 100. The inclined surface 420 may be formed to be inclined in both a first direction (D1 direction) and a second direction (D2 direction), the first direction being the sliding direction of the support bracket 300, and the second direction extending from the lower surface of the housing 100 toward the upper inner surface of the housing 100 (e.g., the top of the interior space of the housing 100).

[0053] The support bracket 300 can move from a first position not in contact with the inclined surface 420 to a second position pressed by the inclined surface 420, while simultaneously moving by sliding in a first direction (D1 direction). For example, Figure 3 It could be a diagram showing the support bracket 300 in the first position, and Figure 4 It could be a diagram showing the support bracket 300 in the second position.

[0054] exist Figure 3 In this configuration, the support bracket 300, where the substrate 200 is located, can move within the housing 100 by sliding along a first direction (D1 direction) at a first position spaced apart from the inclined surface 420. In this case, the support bracket 300 can move by sliding along the lower surface of the housing 100, wherein an air gap AG is formed between the heat dissipation member 500 disposed above the substrate 200 and the inner surface of the housing 100. The air gap AG can refer to the gap space formed between the heat dissipation member 500 and the inner surface of the housing 100. For example, when the support bracket 300 is in the first position, an air gap AG with a spacing S1 of approximately 0.2 mm can be formed between the upper surface of the heat dissipation member 500 and the inner surface of the housing 100. As described above, since an air gap AG is formed between the heat dissipation component 500 and the housing 100 when the support bracket 300 is inserted into the housing 100, it can prevent damage to the heat dissipation component 500 or the housing 100, or displacement of the heat dissipation component 500, due to friction between the heat dissipation component 500 and the inner surface of the housing 100 when the support bracket 300 is inserted into the housing 100.

[0055] However, the air gap AG can act as an insulating structure within the housing 100, and therefore can be eliminated once the substrate 200 and the support bracket 300 are assembled into the housing 100. The semiconductor device 10 according to various exemplary embodiments of this disclosure can eliminate the air gap AG through a structure of an inclined surface 420 disposed within the housing 100, and can allow the heat dissipation member 500 to be in close contact with the housing 100.

[0056] exist Figure 4In this configuration, the support bracket 300 can be slidably moved to a second position, thereby coupling with the housing 100. During the sliding movement from the first position to the second position, the support bracket 300 can slide upward along the inclined surface 420 disposed within the housing 100 by an external force inserted into the support bracket 300 in a first direction (D1 direction). For example, the support bracket 300 can be moved by sliding within the housing 100, wherein the substrate 200 is located on one surface (e.g., the upper surface) of the support bracket 300, and in the process, the other surface (e.g., the lower surface) of the support bracket 300 can slide and climb up the inclined surface 420. Accordingly, when moving from the first position to the second position, the support bracket 300 can rise slightly relative to the lower surface of the housing 100.

[0057] For example, in Figure 4 In this configuration, the support bracket 300 can climb onto the inclined surface 420 of the auxiliary bracket 400 and rise along the second direction (D2 direction) while sliding, thus forming a predetermined gap S2 between the lower surface of the support bracket 300 and the housing 100. Accordingly, the air gap AG between the heat dissipation member 500 and the housing 100 can be eliminated, and the upper surface of the heat dissipation member 500 can be in close contact with the inner surface of the housing 100.

[0058] In some embodiments, the inclined surface 420 allows the rise width S2 of the support bracket 300 to be greater than the spacing S1 of the air gap AG. In this case, when the support bracket 300 is coupled to the housing 100, the heat dissipation member 500 can be in a slightly compressed state. For example, even after the heat dissipation member 500 contacts the inner surface of the housing 100, the support bracket 300 can still be slightly moved by sliding in the first direction (D1 direction) by an external force, and correspondingly, can be coupled to the housing 100 in a state of being compressed by the inclined surface 420 in the second direction (D2 direction). In other words, in the second position, the support bracket 300 and the heat dissipation member 500 can be in a state of being compressed by the inclined surface 420 in the second direction (D2 direction) with a predetermined pressure.

[0059] For example, when the support bracket 300 is in the first position, an air gap AG of approximately 0.2 mm is formed; and when the support bracket 300 moves to the second position, rising approximately 0.4 mm towards the upper inner surface of the housing 100 compared to the first position, the heat dissipation member 500 can be in close contact with the upper inner surface of the housing 100, and its thickness is compressed by approximately 0.2 mm. As the heat dissipation member 500 is compressed, the TIM included in at least a portion of the heat dissipation member 500 can be compressed, thereby maximizing heat dissipation efficiency. However, in some embodiments, in addition to the values ​​described above, the air gap AG, the rising width of the support bracket 300, and the degree of compression of the heat dissipation member 500 can be changed and implemented in various ways. For example, the rising width of the support bracket 300 can be any width capable of eliminating the air gap AG between the heat dissipation member 500 and the housing 100.

[0060] Specifically, in a semiconductor device 10 having a housing 100 manufactured in the form of a single frame, the coupling structure of the inclined surface 420 of the semiconductor device 10 can effectively prevent the heat dissipation component 500 from being damaged by friction during assembly, and can also ensure that the heat dissipation component 500 and the housing 100 have a sufficiently tight contact after assembly.

[0061] exist Figure 3 and Figure 4 In order to enable the support bracket 300 to climb onto the inclined surface 420 more smoothly, the portion of the support bracket 300 that contacts the inclined surface 420 may be formed with a chamfered or curved structure. For example, when the portion of the support bracket 300 that contacts and is pressed by the inclined surface 420 is defined as the pressing portion 320, at least a portion of the pressing portion 320 may be formed as a chamfered surface 324 or a curved surface. The chamfered surface 324 or the curved surface can reduce the friction between the support bracket 300 and the inclined surface 420, and enable the support bracket 300 to enter the inclined surface 420 stably and climb onto the inclined surface 420 more smoothly.

[0062] Meanwhile, in some embodiments, the tilt angle of the inclined surface 420 can be appropriately changed and implemented. For example, based on the lower surface (inner bottom surface) of the housing 100, the tilt angle of the inclined surface 420 can be greater than 0 degrees (°) and less than or equal to 30°, or for example, about 10°. However, the tilt angle of the inclined surface 420 is not limited to the above numerical range and can be changed and implemented to various angles sufficient to allow the support bracket 300 to slide smoothly upward.

[0063] The support bracket 300 can be coupled to the housing 100 in the second position, while closing the first opening 110 of the housing 100. For example, when the support bracket 300 is in the second position, the flange portion 310 provided on the edge of the support bracket 300 can close the first opening 110 of the housing 100.

[0064] The support bracket 300 may include a protrusion 311 disposed at the flange portion 310 and protruding further than the opposing surface (e.g., the lower surface) of the surface on which the substrate 200 is placed (e.g., the upper surface) of the support bracket 300. The protrusion 311 may contact the housing 100 to support the lower portion of the support bracket 300 and to allow the support bracket 300 to be stably held in an elevated state by means of the inclined surface 420.

[0065] exist Figure 3 and Figure 4 In this housing 100, a stepped portion 140 may be formed inside the first opening 110. This stepped portion 140 restricts the movement of the protrusion 311, preventing the protrusion 311 from further penetrating in the first direction (D1 direction). The stepped portion 140 may contact the protrusion 311 in the first direction (D1 direction), thereby preventing the protrusion 311 from inserting into the housing 100 beyond a certain extent. This allows the stepped portion 140 to function as a stop, preventing the support bracket 300 from inserting beyond the required depth.

[0066] In the following text, see references Figures 5 to 12 The description includes semiconductor devices 20, 30, and 40 according to some implementations.

[0067] Figure 5 This is an example cross-sectional view of a semiconductor device according to some embodiments. In some embodiments, the heat dissipation component 500 of the semiconductor device 20 may include a heat spreader 520 comprising a metallic material. For example, in Figure 5 In the heat dissipation component 500, the heat dissipation component 500 may have a structure in which a heat dissipation pad 510 made of TIM is attached to the outer surface of the heat spreader 520.

[0068] The heat spreader 520 may include a metal plate 521 and a refrigerant space 522 formed within the metal plate 521. The metal plate 521 may include at least one of copper, aluminum, stainless steel, and graphite, but may also include various metallic materials with high thermal conductivity. The refrigerant space 522 may contain various refrigerants, such as air, liquid nitrogen, and water, and may be configured to utilize the phase change of these refrigerants to transfer heat. In some embodiments, the refrigerant space 522 may be in a vacuum state. The heat spreader 520 can prevent heat concentration (i.e., hot spots) from occurring at specific locations on the heat dissipation member 500, thereby enabling the heat dissipation member 500 to have a uniform heat distribution throughout. Accordingly, the heat dissipation efficiency of the heat dissipation member 500 can be maximized.

[0069] exist Figure 5 In this configuration, the heat dissipation pad 510 can be positioned between the heat spreader 520 and the housing 100, or between the heat spreader 520 and the electronic component 210. The heat dissipation pad 510 allows for rapid heat transfer between the heat spreader 520 and the housing 100, or between the heat spreader 520 and the electronic component 210, and can also act as a buffer when the metal material of the heat spreader 520 directly impacts the electronic component 210 or the housing 100.

[0070] at the same time, Figure 5 Other technical features of the semiconductor device 20 besides the heat dissipation component 500 can be found in [reference]. Figures 1 to 4 Description of semiconductor device 10.

[0071] Figure 6 This is an example cross-sectional view of a semiconductor device according to some implementation methods. Figure 6 An inclined surface 150 can be formed on the inner bottom surface of the housing 100, which is used to push the support bracket 300 upward. For example, the inclined surface 150 can be formed on the bottom surface of the housing 100. Accordingly, a more robust inclined surface 150 can be formed.

[0072] exist Figure 6In this structure, multiple electronic components 210 can be disposed in specific areas of the substrate 200 (hereinafter referred to as component areas), and an inclined surface 150 within the housing 100 can be formed at a position in the compression support bracket 300 corresponding to the component areas of the substrate 200. For example, the inclined surface 150 can be gradually formed over a wide area of ​​the inner bottom surface of the housing 100, and a compression portion 320 in the support bracket 300 that contacts the inclined surface 150 can be formed at a position facing the component areas of the substrate 200 along the second direction (D2 direction). When the support bracket 300 moves by sliding in the first direction (D1 direction), the compression portion 320 can contact and be pressed against the inclined surface 150, and the compression portion 320 can concentrate and transmit this pressure to the portion of the heat dissipation member 500 facing the component areas of the substrate 200. Accordingly, the portion of the heat dissipation member 500 facing the component areas can be concentrated and compressed, and locally made into closer and tighter contact with the inner surface of the housing 100, thereby maximizing the heat dissipation efficiency of the component areas.

[0073] at the same time, Figure 6 Other technical features of the semiconductor device 30, except for the positions of the inclined surface 150 and the extrusion section 320, can be found in reference to Figures 1 to 5 Description of semiconductor devices 10 and 20.

[0074] In some embodiments, the semiconductor device 40 may include a plurality of tilted surfaces 420. Referring below, Figures 7 to 12 This describes a semiconductor device 40 having multiple tilted surfaces 420.

[0075] Figure 7 This is an exploded perspective view of an example of a semiconductor device according to some implementation methods. Figure 8 This is a reference diagram illustrating an example of the arrangement of the extrusion section 320 and the inclined surface 420 according to some embodiments. Figure 9 This is an example cross-sectional view of an example of the state of a semiconductor device 40 before the support bracket 300 is coupled to the housing 100, according to some embodiments. Figure 10 This is an example cross-sectional view of an example of the state in which a support bracket 300 in a semiconductor device 40 is coupled to a housing 100 according to some embodiments. Figure 11 A portion of a cross-sectional view of an auxiliary bracket 400 included in a semiconductor device 40 according to some embodiments is shown. Figure 12 A portion of a cross-sectional view of a semiconductor device 40 according to some embodiments is shown.

[0076] In some embodiments, multiple electronic components 210 may be disposed on the substrate 200 of the semiconductor device 40. For example, in Figure 7 and Figure 8In this process, multiple electronic components 210 can be spaced apart on the substrate 200 along a first direction (D1 direction) or a third direction (D3 direction).

[0077] The semiconductor device 40 may include a plurality of extrusion portions 320 and corresponding plurality of inclined surfaces 420 to locally extrude portions of the heat dissipation member 500 facing the plurality of electronic components 210 and bring them into close contact. For example, the extrusion portions 320 may be individually provided in the support bracket 300 where the substrate is located, at a portion corresponding to the position of each electronic component 210. In addition, a plurality of inclined surfaces 420 may be formed in the auxiliary bracket 400 to appropriately push each extrusion portion 320 upward.

[0078] exist Figure 7 and Figure 8 In the semiconductor device 40, a first semiconductor element 211 and a second semiconductor element 212 are disposed along a first direction (D1 direction, i.e., the sliding direction of the support bracket 300), and a third semiconductor element 213 is disposed spaced apart from the first semiconductor element 211 along a third direction (D3 direction).

[0079] The substrate 200 can be placed on the support bracket 300, and the support bracket 300 can include: a first extrusion portion 321 that overlaps with the first semiconductor element 211 in the second direction (D2 direction); a second extrusion portion 322 that overlaps with the second semiconductor element 212 in the second direction (D2 direction); and a third extrusion portion 323 that overlaps with the third semiconductor element 213 in the second direction (D2 direction).

[0080] When the support bracket 300 moves by sliding along the first direction (D1 direction), each of the first pressing part 321, the second pressing part 322, and the third pressing part 323 can contact and be pressed with different inclined surfaces 420. For example, the auxiliary bracket 400 may be provided with a first inclined surface 421 that contacts the first pressing part 321, a second inclined surface 422 that contacts the second pressing part 322, and a third inclined surface 423 that contacts the third pressing part 323.

[0081] like Figure 7 and Figure 8 As shown, multiple inclined surfaces 420 can be formed in the auxiliary bracket 400. However, the locations where the inclined surfaces 420 are formed are not limited to those described above. For example, as mentioned above... Figure 6 Alternatively, multiple inclined surfaces 420 may be formed on the inner bottom surface of the housing 100.

[0082] exist Figure 9 and Figure 10In this configuration, the support bracket 300 can move from a first position (where the pressing part 320 is not in contact with the inclined surface 420) to a second position (where the pressing part 320 is pressed by the inclined surface 420) by sliding along a first direction (D1 direction). For example, Figure 9 The diagram shows the support bracket 300 in its first position, and Figure 10 This diagram shows the support bracket 300 in the second position.

[0083] exist Figure 10 In this configuration, when the support bracket 300 is coupled to the housing 100, the first pressing portion 321 and the first semiconductor element 211 can be positioned facing the first inclined surface 421 in a second direction (D2 direction) parallel to the thickness direction of the substrate 200. The first pressing portion 321 can be pressed by the first inclined surface 421, and the pressure is transmitted to the portion of the heat dissipation member 500 facing the first semiconductor element 211. Accordingly, vertical pressure (e.g., pressure in the D2 direction) can be locally applied to the portion of the heat dissipation member 500 facing the first semiconductor element 211, and the corresponding portion can be in close contact with the inner surface of the housing 100.

[0084] Furthermore, in some embodiments, when the support bracket 300 is coupled to the housing 100, the second pressing portion 322 and the second semiconductor element 212 may be positioned facing the second inclined surface 422 in a second direction (D2 direction) parallel to the thickness direction of the substrate 200. Similar to the description of the first pressing portion 321, the pressure applied to the second pressing portion 322 by the second inclined surface 422 can be transmitted to the heat dissipation member 500. Accordingly, vertical pressure (e.g., pressure in the D2 direction) can be locally applied to the portion of the heat dissipation member 500 facing the second semiconductor element 212, and the corresponding portion can be in close contact with the inner surface of the housing 100.

[0085] As described above, by applying localized pressure to the portion of the heat dissipation member 500 corresponding to each electronic component 210 (including multiple pressing portions 320 and multiple inclined surfaces 420), the semiconductor device 40 can make this portion come into close contact with the inner surface of the housing 100. Accordingly, an optimal heat transfer path can be formed from each electronic component 210 to the housing 100.

[0086] In order to prevent interference between the plurality of pressing parts 320 and the plurality of inclined surfaces 420 when the support bracket 300 moves by sliding from the first position to the second position, the pressing parts of the plurality of pressing parts 320 arranged along the first direction (D1 direction) and the inclined surfaces of the plurality of inclined surfaces 420 arranged along the first direction (D1 direction) may have different thicknesses or heights (here, thickness or height refers to the length in the second direction (D2 direction)).

[0087] For example, in Figure 11 and Figure 12 In the first inclined surface 421 and the second inclined surface 422 arranged along the first direction (D1 direction), based on the bottom surface of the housing 100, the height H1 of the highest point of the first inclined surface 421 can be lower than the height H2 of the highest point of the second inclined surface 422. As described above, since the first inclined surface 421 is formed lower, when the support bracket 300 moves by sliding along the first direction (D1 direction), the second pressing part 322 that first encounters the first inclined surface 421 can smoothly move to the second inclined surface 422 without being disturbed by the first inclined surface 421.

[0088] Meanwhile, in order to compensate for the height difference between the first inclined surface 421 and the second inclined surface 422, in the first extrusion portion 321 and the second extrusion portion 322 provided along the first direction (D1 direction), the thickness T1 of the first extrusion portion 321 can be formed to be thicker than the thickness T2 of the second extrusion portion 322. For example, referring to... Figure 11 and Figure 12 The thickness T1 of the first extrusion portion 321 that contacts the first inclined surface 421 (whose highest point is at a relatively low height H1) can be thicker than the thickness T2 of the second extrusion portion 322 that contacts the second inclined surface 422 (whose highest point is at a relatively high height H2). Accordingly, the plurality of extrusion portions 320 can make full contact with the inclined surfaces 420, which are at different heights.

[0089] The height of the inclined surface 420 or the thickness of the extrusion portion 320 can be appropriately changed and implemented. For example, the height of the inclined surface 420 or the thickness of the extrusion portion 320 in the semiconductor device 40 can be formed such that the portions of the heat dissipation member 500 that contact each electronic component 210 have different compression ratios. For example, the first inclined surface 421 can extrude the first extrusion portion 321, and the portion of the heat dissipation member 500 that contacts the first semiconductor component 211 is in close contact with the housing 100 under a state of compression at the first compression ratio. Furthermore, the second inclined surface 422 can extrude the second extrusion portion 322, and the portion of the heat dissipation member 500 that contacts the second semiconductor component 212 is in close contact with the housing 100 under a state of compression at a second compression ratio different from the first compression ratio. Accordingly, since the heat dissipation member 500 is in local close contact with each electronic component 210 at optimal pressure, a heat dissipation structure optimized for the thermal characteristics of each electronic component 210 can be achieved.

[0090] To enable the support bracket 300 to climb more smoothly onto the multiple inclined surfaces 420, at least one of the multiple extrusion portions 320 may include a chamfered or bent structure. For example, see reference... Figure 12A chamfered surface 324 or a curved surface can be formed at the edge of the first extrusion part 321 and the second extrusion part 322 in the first direction (D1 direction).

[0091] The compression portion 320 of the support bracket 300 can be configured to elastically deform, thereby moving relative to other portions of the support bracket 300 within a predetermined range. For example, in Figure 8 and Figure 12 In the compression portion 320, a slit 330 may be formed along its edge, and the compression portion 320 may be connected to other portions of the support bracket 300 through its edge where the slit 330 is not formed. The slit 330 may have a structure that penetrates the support bracket 300. When the support bracket 300 moves by sliding along a first direction (D1 direction) causing the inclined surface 420 to compress the compression portion 320, the compression portion 320 can elastically deform while rotating about the portion where the slit 330 is not formed and moving relative to other portions of the support bracket 300. Because the structure of the slit 330 is formed along the edge of the compression portion 320, the compression portion 320 can more effectively apply vertical pressure (e.g., pressure in the D2 direction) locally to the heat dissipation member 500 disposed above the substrate 200.

[0092] At the same time, except for regarding Figures 7 to 12 Other technical features of the semiconductor device 40 besides the inclined surface 420 and the extrusion section 320 can be found in the section on Figures 1 to 6 The description.

[0093] According to some implementations, semiconductor devices 10, 20, 30 and 40 can be realized with the following simple assembly structure: a simple assembly structure in which the sliding heat dissipation member 500 and the support bracket 300 where the substrate 200 is located are coupled to the housing 100.

[0094] According to some embodiments, damage to parts or assembly defects can be prevented due to friction between the heat dissipation component 500 and the housing 100 when the support bracket 300 moves by sliding. Furthermore, the structure of the inclined surface 420 within the housing 100 ensures that the heat dissipation component 500 can make sufficient and tight contact with the housing 100 after assembly, thereby improving heat dissipation efficiency.

[0095] Because the inclined surface 420 structure allows for the appropriate formation or elimination of the air gap AP based on the position of the support bracket 300, a sliding coupling structure for the support bracket 300 can be effectively achieved even if the housing 100 is formed as a single, integrated frame type rather than a combination of multiple independent frames. Consequently, semiconductor devices 10, 20, 30, and 40 that are easy to assemble, easy to process, and have enhanced heat dissipation performance can be realized.

[0096] According to some implementation methods, semiconductor devices with excellent thermal stability, as well as excellent assemblability and processability can be realized.

[0097] Although this disclosure contains numerous specific implementation details, these details should not be construed as limiting the scope of the claims, their equivalents, and the claims described later. In a single implementation, specific features described in the context of a standalone implementation of this disclosure may also be combined. Conversely, different features described in a single implementation context may also be implemented individually in multiple implementations, or in appropriate sub-combinations. Furthermore, although features may be described above as functioning in certain combinations, one or more features from a combination may be removed from the combination in some cases, and combinations may be for sub-combinations or variations of sub-combinations.

Claims

1. A semiconductor device, comprising: The shell defines the internal space; A support bracket is configured to slide within the internal space along a first direction from a first end of the housing to a second end of the housing; The substrate is on the surface of the support bracket; One or more semiconductor elements are mounted on the substrate; A heat dissipation component is located between the inner surface of the housing and the one or more semiconductor elements; as well as One or more inclined surfaces within the housing, The one or more inclined surfaces are configured such that, based on the support bracket sliding along the first direction within the interior space, the surface of the support bracket moves toward the inner surface of the housing facing the surface of the support bracket.

2. The semiconductor device of claim 1, further comprising an auxiliary bracket coupled to the housing. in, The one or more inclined surfaces are disposed at the auxiliary bracket.

3. The semiconductor device according to claim 2, in, The support bracket is coupled to a first opening defined at the first end of the housing, and The auxiliary bracket is coupled to a second opening defined at the second end of the housing.

4. The semiconductor device according to claim 1, in, The support bracket includes a compression portion configured to be compressed by the one or more inclined surfaces based on the support bracket sliding along the first direction. The extrusion section includes a chamfered surface or curved surface located at the edge of the extrusion section along the first direction.

5. The semiconductor device according to claim 4, in, The support bracket includes a protrusion that is spaced apart from the compression portion in a direction opposite to the first direction, and The protrusion extends from the opposite surface of the surface of the support bracket.

6. The semiconductor device according to claim 5, wherein, The housing includes: A first opening, the support bracket being configured to be inserted into the first opening; and A step, on the inner surface of the first opening, is configured to interlock with the protrusion, thereby restricting the movement of the protrusion.

7. The semiconductor device according to claim 1, in, The one or more semiconductor elements include a first semiconductor element and a second semiconductor element arranged along the first direction, and Wherein, the one or more inclined surfaces include: A first inclined surface faces the first semiconductor element along the thickness direction of the substrate; and The second inclined surface faces the second semiconductor element along the thickness direction of the substrate.

8. The semiconductor device according to claim 7, wherein, The height of the highest point of the first inclined surface is lower than the height of the highest point of the second inclined surface.

9. The semiconductor device according to claim 7, in, The support bracket includes: A first extrusion section is configured to contact the first inclined surface; and The second extrusion section is configured to contact the second inclined surface, and The thickness of the first extrusion section is greater than the thickness of the second extrusion section.

10. The semiconductor device according to claim 9, in, The support bracket includes a slit defined along the edges of the first extrusion portion and the second extrusion portion, and The first extrusion part and the second extrusion part are configured to contact the first inclined surface and the second inclined surface respectively, thereby causing deformation.

11. The semiconductor device according to claim 1, in, The heat dissipation component includes a heat dissipation pad having a thermal interface material and in contact with the one or more semiconductor elements, and The heat dissipation pad is configured to contact the housing based on the support bracket being coupled to the housing.

12. The semiconductor device according to claim 1, wherein, The heat dissipation component includes: A heat spreader, including a refrigerant space; and A heat dissipation pad is positioned between the heat spreader and the housing, and The heat dissipation pad includes a thermal interface material.

13. The semiconductor device according to claim 1, wherein, The one or more inclined surfaces are defined on the bottom surface within the housing.

14. The semiconductor device according to claim 1, wherein, The tilt angle of the one or more tilted surfaces is greater than 0° and less than or equal to 30°.

15. A semiconductor device, comprising: substrate; One or more semiconductor elements are mounted on the substrate; A support bracket, on which the base plate is mounted; The housing is configured to accommodate the support bracket; A heat dissipation component is located between the inner surface of the housing and the one or more semiconductor elements; as well as An inclined surface, within the housing, is inclined relative to the lower surface of the support bracket. The support bracket is configured to slide from a first position spaced apart from the inclined surface to a second position in contact with the inclined surface. Wherein, based on the support bracket being in the first position, the heat dissipation component is spaced apart from the housing, and Wherein, based on the support bracket being in the second position, the heat dissipation component is in contact with the housing.

16. The semiconductor device according to claim 15, in, The support bracket is configured to slide inside the housing via an opening defined on one side of the housing, and The support bracket is configured to close the opening of the housing in the second position.

17. A semiconductor device, comprising: substrate; A first semiconductor element and a second semiconductor element are mounted on the substrate along a first direction; A support bracket, wherein the substrate is mounted on the support bracket, the support bracket including a first extrusion portion below the first semiconductor element and a second extrusion portion below the second semiconductor element; A housing, wherein an opening is provided on one side of the housing, and the support bracket is configured to be inserted into the housing through the opening along the first direction; A heat dissipation component has a first surface that contacts the first semiconductor element and the second semiconductor element, and a second surface that contacts the housing. A first inclined surface, within the housing, is configured to move the first pressing portion of the support bracket; as well as A second inclined surface, within the housing, is configured to move the second compression portion of the support bracket.

18. The semiconductor device according to claim 17, wherein, The height of the highest point of the second inclined surface is greater than the height of the highest point of the first inclined surface.

19. The semiconductor device according to claim 17, wherein, The compression ratio of the first portion of the heat dissipation component that contacts the first semiconductor element is different from the compression ratio of the second portion of the heat dissipation component that contacts the second semiconductor element.

20. The semiconductor device of claim 17, comprising: A third semiconductor element is spaced apart from the first semiconductor element on the substrate along a second direction perpendicular to the first direction; as well as A third inclined surface is spaced apart from the first inclined surface along the second direction within the housing.

Images