Member for semiconductor manufacturing apparatus

Abstract

The member for a semiconductor manufacturing apparatus includes: a ceramic plate having an upper surface having a wafer placement surface on which a reference surface is provided with a large number of small protrusions, and having a built-in electrostatic electrode; a plug arrangement hole provided in the ceramic plate so as to extend in the vertical direction; an electrostatic electrode opening provided at a position of the electrostatic electrode through which the plug placement hole is inserted; the cooling plate is arranged on the lower surface of the ceramic plate; a gas hole penetrating the cooling plate in the vertical direction and communicating with the plug arrangement hole; a plug disposed in the plug disposition hole and having a gas flow path through which the heat conduction gas can flow in the vertical direction; and a raised part which is provided so as to surround the gas flow path, and which has a top surface higher than the reference surface and lower than the top surface of the small protrusion.

Description

Technical Field

[0001] This invention relates to components for semiconductor manufacturing apparatus. Background Technology

[0002] Conventionally, a known component for a semiconductor manufacturing apparatus includes a ceramic plate having a wafer mounting surface and an internal electrostatic electrode, and a cooling plate disposed on the lower surface of the ceramic plate. Patent Document 1 discloses a ceramic plate having a plug mounting hole extending vertically through the ceramic plate and a porous plug disposed in the plug mounting hole. Patent Document 1 also discloses a cooling plate having a gas hole extending vertically through the cooling plate and communicating with the plug mounting hole. In this semiconductor manufacturing apparatus component, when the wafer is electrostatically adsorbed onto the wafer mounting surface, helium gas is introduced into the porous plug through the gas hole of the cooling plate. This helium gas is then supplied to the back side of the wafer, improving thermal conductivity between the wafer and the ceramic plate. Since the helium gas passes through the gas hole of the porous plug, arc discharge on the back side of the wafer can be suppressed compared to the case without the porous plug.

[0003] Existing technical documents

[0004] Patent documents

[0005] Patent Document 1: Japanese Patent Application Publication No. 2019-29384 Summary of the Invention

[0006] However, to ensure sufficient helium flow through the porous plug, the diameter of the porous plug is typically large, which in turn usually increases the diameter of the plug mounting hole. Furthermore, an electrostatic electrode opening is provided at the location where the plug mounting hole passes through the electrostatic electrode; however, the diameter of this electrostatic electrode opening increases with the diameter of the plug mounting hole. In the portion directly above the electrostatic electrode opening on the wafer mounting surface, since there is no electrostatic electrode, the wafer adhesion is reduced. However, if the diameter of the electrostatic electrode opening increases, the reduction in wafer adhesion becomes significant. As a result, the portion directly above the electrostatic electrode opening does not adequately utilize the cooling plate for heat dissipation, easily becoming a hotspot.

[0007] The present invention was implemented to solve the above-mentioned problems, and its main purpose is to suppress the portion directly above the opening of the electrostatic electrode from becoming a peculiar point.

[0008] [1] The semiconductor manufacturing apparatus component of the present invention includes:

[0009] A ceramic plate having a wafer mounting surface on its upper surface and an embedded electrostatic electrode, wherein the reference surface of the wafer mounting surface is provided with a large number of small protrusions to support the wafer.

[0010] A plug configuration hole is provided on the ceramic plate in a manner that extends in the vertical direction;

[0011] An electrostatic electrode opening is provided at the position through which the plug configuration hole of the electrostatic electrode passes, and has the same or larger diameter as the plug configuration hole.

[0012] A cooling plate is disposed on the lower surface of the ceramic plate;

[0013] A gas hole extends through the cooling plate in a vertical direction and communicates with the plug configuration hole;

[0014] A plug, disposed in the plug configuration hole, and having a gas flow path for heat-conducting gas to flow in the vertical direction; and

[0015] A raised portion is configured to surround the gas flow path, with its top surface higher than the reference surface and lower than the top surface of the small protrusion.

[0016] In this component of the semiconductor manufacturing apparatus, a raised portion is provided, which surrounds the gas flow path. The top surface of the raised portion is higher than the reference surface and lower than the top surface of the small protrusion. The thermal conductivity of the raised portion is higher than that of the heat-conducting gas. Therefore, even if the wafer adhesion is low, heat in the portion directly above the electrostatic electrode opening at the wafer mounting surface can easily move to the cooling plate via the raised portion. Furthermore, since the top surface of the raised portion is higher than the reference surface, heat movement in the portion directly above it is promoted, preventing the temperature of the portion directly above it from becoming too high. On the other hand, since the top surface of the raised portion is lower than the top surface of the small protrusion, it is also possible to prevent excessively promoted heat movement in the portion directly above it from causing the temperature of the portion directly above it to become too low. Therefore, it is possible to prevent the portion directly above the electrostatic electrode opening from becoming an outlier.

[0017] It should be noted that in this specification, "up" and "down" do not indicate an absolute positional relationship, but rather a relative positional relationship. Therefore, depending on the orientation of the component in the semiconductor manufacturing apparatus, "up" and "down" may become "down" and "up," "left" and "right," or "front" and "back."

[0018] [2] In the semiconductor manufacturing apparatus component of the present invention (the semiconductor manufacturing apparatus component described in [1] above), the raised portion and the ceramic plate can be an integral part. Therefore, by making the raised portion and the ceramic plate an integral part (making the raised portion a part of the ceramic plate), the raised portion can be formed more easily.

[0019] [3] In the semiconductor manufacturing apparatus component of the present invention (the semiconductor manufacturing apparatus component described in [1] or [2] above), the raised portion may have a plug cover portion that covers the upper surface of the plug, and the plug cover portion may have a small hole extending in the vertical direction. Accordingly, the plug is protected by the plug cover portion.

[0020] [4] In the semiconductor manufacturing apparatus component of the present invention (the semiconductor manufacturing apparatus component described in [1] above), the plug may be a component having the gas flow path in a dense material. By using a component having a gas flow path formed in a dense material as a plug in this way, it is not necessary to provide a raised portion separately from the plug.

[0021] [5] In the semiconductor manufacturing apparatus component of the present invention (the semiconductor manufacturing apparatus component described in any one of [1], [2] or [4] above), the plug configuration hole may be configured to penetrate the ceramic plate in the vertical direction, the plug may protrude from the upper opening of the plug configuration hole and function as the raised portion, and the upper surface of the plug may be at the same height as the upper surface of the raised portion.

[0022] [6] In the semiconductor manufacturing apparatus component of the present invention (the semiconductor manufacturing apparatus component described in any one of [1] to [5] above), the depth Y from the top surface of the small protrusion to the top surface of the raised portion can be more than 1 / 2 and less than 2 / 3 of the height A from the reference surface to the top surface of the small protrusion. If the depth Y is greater than 2 / 3 of the height A, the heat in the portion directly above the opening of the electrostatic electrode is not easily moved sufficiently to the cooling plate. If the depth Y is less than 1 / 2 of the height A, the heat in the portion directly above the opening of the electrostatic electrode may move excessively to the cooling plate or hinder the flow of the heat-conducting gas.

[0023] [7] In the semiconductor manufacturing apparatus component of the present invention (the semiconductor manufacturing apparatus component described in any one of [1] to [6] above), the raised portion may be annular in plan view, and the outer diameter of the raised portion may be larger than the outer diameter of the gas flow path and less than the diameter of the electrostatic electrode opening. Accordingly, the effects of the present invention are readily obtained. Attached Figure Description

[0024] Figure 1 This is a longitudinal sectional view of component 10 for a semiconductor manufacturing apparatus.

[0025] Figure 2 This is a plan view of ceramic plate 20.

[0026] Figure 3 yes Figure 1 A magnified view of a portion of the image.

[0027] Figure 4 This is a partially enlarged longitudinal sectional view of another embodiment.

[0028] Figure 5 This is a partially enlarged longitudinal sectional view of another embodiment.

[0029] Figure 6 This is a partially enlarged longitudinal sectional view of another embodiment.

[0030] Figure 7 This is a partially enlarged longitudinal sectional view of another embodiment. Detailed Implementation

[0031] Next, preferred embodiments of the present invention will be described with reference to the accompanying drawings. Figure 1 This is a longitudinal sectional view of component 10 for a semiconductor manufacturing apparatus. Figure 2 This is a plan view of ceramic plate 20. Figure 3 yes Figure 1 A magnified view of a portion of the image. It should be noted that... Figure 3 The height of the small circular protrusion 21b and the raised part 60 is exaggeratedly depicted.

[0032] like Figure 1 As shown, the component 10 for a semiconductor manufacturing apparatus includes: a ceramic plate 20, a cooling plate 30, a metal bonding layer 40, a porous plug 50, and a raised portion 60 (see reference). Figure 2 and Figure 3 ), and insulating tube 70.

[0033] The ceramic plate 20 is a circular plate (e.g., 300 mm in diameter and 5 mm thick) made of ceramic such as alumina sintered body or aluminum nitride sintered body. The upper surface of the ceramic plate 20 serves as the wafer mounting surface 21. Electrodes 22 are embedded within the ceramic plate 20. Figure 2 As shown, a sealing strip 21a is formed along the outer edge of the wafer mounting surface 21 of the ceramic plate 20, and multiple small circular protrusions 21b are formed on the entire surface. The sealing strip 21a and the small circular protrusions 21b have the same height, for example, several μm to tens of μm. The electrode 22 is a planar mesh electrode used as an electrostatic electrode, capable of applying a DC voltage. When a DC voltage is applied to the electrode 22, the wafer W is adsorbed and fixed to the wafer mounting surface 21 (specifically, the upper surface of the sealing strip 21a and the upper surface of the small circular protrusions 21b) by electrostatic attraction. When the application of the DC voltage is released, the wafer W is released from adsorption and fixation on the wafer mounting surface 21. It should be noted that the portion of the wafer mounting surface 21 without the sealing strip 21a, the small circular protrusions 21b, and the raised portion 60 (described later) is referred to as the reference surface 21c.

[0034] The plug placement hole 24 is provided in the ceramic plate 20 in a manner that penetrates the electrode 22 and extends in the vertical direction. The plug placement hole 24 is a cylindrical hole that penetrates the ceramic plate 20 in the vertical direction, and is provided in multiple locations on the ceramic plate 20 (e.g., such as...). Figure 2 As shown, multiple locations are equally spaced along the circumference. A porous plug 50, described later, is disposed in the plug placement hole 24. An electrode through hole 23 is provided on the electrode 22 in a concentric circle with the plug placement hole 24. The diameter B of the electrode through hole 23 is larger than the diameter of the plug placement hole 24.

[0035] The cooling plate 30 is a circular plate with good thermal conductivity (the same diameter as or larger than that of the ceramic plate 20) and is disposed on the lower surface of the ceramic plate 20. Inside the cooling plate 30, a refrigerant flow path 32 for refrigerant circulation and a gas hole 34 for supplying gas to the porous plug 50 are formed. The refrigerant flow path 32, viewed from above, is formed in a single continuous line from inlet to outlet across the entire surface of the cooling plate 30. The gas hole 34 is a cylindrical hole and is disposed opposite to the plug placement hole 24. Examples of materials for the cooling plate 30 include: metallic materials and composite materials of metal and ceramic. Examples of metallic materials include: Al, Ti, Mo, or alloys thereof. Examples of composite materials of metal and ceramic include: metal matrix composites (MMC) and ceramic matrix composites (CMC). Specific examples of this composite material include: materials containing Si, SiC, and Ti (also known as SiSiCTi), materials obtained by impregnating Al and / or Si into a porous SiC body, and composite materials of Al2O3 and TiC. As the material for the cooling plate 30, a material with a coefficient of thermal expansion close to that of the ceramic plate 20 is preferred. The cooling plate 30 also serves as an RF electrode.

[0036] The metal bonding layer 40 bonds the lower surface of the ceramic plate 20 and the upper surface of the cooling plate 30. The metal bonding layer 40 is formed using, for example, TCB (Thermal Compression Bonding). TCB refers to a known method of bonding two components by clamping a metal bonding material between them and applying pressure to the two components at a temperature below the solidus temperature of the metal bonding material. The metal bonding layer 40 has a circular hole 42 penetrating through it in a vertical direction at a position opposite to the gas hole 34.

[0037] A porous plug 50 is disposed and fixed in a plug placement hole 24. Specifically, the outer peripheral surface of the porous plug 50 and the inner peripheral surface of the plug placement hole 24 can be bonded together, or an external thread on the outer peripheral surface of the porous plug 50 can be screwed into an internal thread on the inner peripheral surface of the plug placement hole 24. Alternatively, holes in the vertical direction can be provided in the molding plate before the ceramic plate 20 is fired. After filling the holes with a mixture of ceramic powder and resin powder, the whole assembly is fired, thereby burning away the resin powder in the holes and sintering the ceramic powder to produce the porous plug 50 and the ceramic plate 20. The porous plug 50 has a large number of holes, so heat-conducting gas can flow through these holes in the vertical direction. Therefore, the porous plug 50 as a whole becomes a gas flow path. The upper surface of the porous plug 50 is at the same height as the upper surface of the raised portion 60. The porous plug 50 can be a porous bulk material obtained by sintering ceramic powder. For example, alumina or aluminum nitride can be used as the ceramic. The porosity of the porous plug 50 is preferably 30% or more, and the average pore size is preferably 20 μm or more. The porosity of the porous plug 50 can be 70% or less.

[0038] The raised portion 60 is a flat and dense annular portion that surrounds the porous plug 50 (and also the plug placement hole 24). The raised portion 60 is configured such that the peripheral portion of the plug placement hole 24 is higher than the reference surface 21c and lower than the top surfaces of the sealing strip 21a and the small circular protrusion 21b. The raised portion 60 and the ceramic plate 20 are the same object. Therefore, the thermal conductivity of the raised portion 60 is higher than that of helium, the heat-conducting gas. The depth Y of the raised portion 60 (the length in the vertical direction from the upper surface of the small circular protrusion 21b to the upper surface of the raised portion 60) is preferably more than 1 / 2 and less than 2 / 3 of the height A of the small circular protrusion 21b (the length in the vertical direction from the reference surface 21c to the upper surface of the small circular protrusion 21b). The inner diameter of the raised portion 60 is the same as the diameter C of the porous plug 50 (which is the same as the outer diameter of the gas flow path), and the outer diameter X of the raised portion 60 is larger than the diameter C of the porous plug 50 and is less than the diameter B of the electrode through hole 23.

[0039] The insulating tube 70 is a cylindrical tube formed from dense ceramic (e.g., dense alumina). The outer peripheral surface of the insulating tube 70 is bonded to the inner peripheral surface of the circular hole 42 of the metal bonding layer 40 and the inner peripheral surface of the gas hole 34 of the cooling plate 30 via an adhesive layer (not shown). The adhesive layer can be an organic adhesive layer (resin adhesive layer) or an inorganic adhesive layer. It should be noted that the adhesive layer may be further disposed between the upper surface of the insulating tube 70 and the lower surface of the ceramic plate 20. The internal space of the insulating tube 70 communicates with the porous plug 50. Therefore, when gas is supplied to the gas hole 34, the gas passes through the insulating tube 70 and the porous plug 50 and is supplied to the back side of the wafer W.

[0040] Next, an example of using the semiconductor manufacturing apparatus component 10 configured as described above will be explained. First, with the semiconductor manufacturing apparatus component 10 disposed in a chamber (not shown), a wafer W is placed on the wafer placement surface 21. Then, the chamber is depressurized using a vacuum pump to a predetermined vacuum level, and a DC voltage is applied to the electrodes 22 of the ceramic plate 20 to generate an electrostatic adsorption force, thereby adsorbing and fixing the wafer W to the wafer placement surface 21 (specifically, the upper surface of the sealing strip 21a and the upper surface of the small circular protrusion 21b). Next, the chamber is set to a reaction gas atmosphere at a predetermined pressure (e.g., tens to hundreds of Pa). Under this state, a high-frequency voltage is applied between the upper electrode (not shown) disposed at the top of the chamber and the cooling plate 30 of the semiconductor manufacturing apparatus component 10 to generate plasma. The surface of the wafer W is treated using the generated plasma. Coolant circulates in the coolant flow path 32 of the cooling plate 30. Back-side gas is introduced into the gas port 34 from a gas cylinder (not shown). A heat-conducting gas (e.g., helium) is used as the back-side gas. Backside gas is supplied through the insulating tube 70 and the porous plug 50 and sealed in the space between the back side of the wafer W and the reference surface 21c of the wafer placement surface 21, and the space between the back side of the wafer W and the raised portion 60. The presence of this backside gas enables efficient heat conduction between the wafer W and the ceramic plate 20.

[0041] Next, a manufacturing example of the component 10 for a semiconductor manufacturing apparatus will be described. First, a component with a flat wafer mounting surface 21 (without the sealing strip 21a, the small circular protrusion 21b, and the raised portion 60) of the component 10 for the semiconductor manufacturing apparatus is manufactured. The manufacturing method is known (e.g., Patent Document 1), so its description is omitted here. Next, a mask with circular perforations at the locations of the raised portion 60 is applied to the flat wafer mounting surface 21, and the exposed portion is sandblasted. Afterward, the mask is peeled off. Thus, the raised portion 60 is formed. Next, a mask is formed on the wafer mounting surface 21 covering the locations of the sealing strip 21a and the small circular protrusion 21b, and the location of the raised portion 60. The exposed portion is sandblasted. Afterward, the mask is peeled off. Thus, the sealing strip 21a, the small circular protrusion 21b, and the reference surface 21c are formed. Based on this, the component 10 for the semiconductor manufacturing apparatus is obtained.

[0042] In the semiconductor manufacturing apparatus component 10 described in detail above, a raised portion 60 with a higher thermal conductivity than the thermally conductive gas is provided to surround the porous plug 50 (which generally corresponds to the gas flow path). Therefore, even if the wafer adhesion is low, heat in the portion directly above the electrode through-hole 23 on the wafer mounting surface 21 can easily move to the cooling plate 30 via the raised portion 60. Furthermore, since the top surface of the raised portion 60 is higher than the reference surface 21c, heat movement in the portion directly above it is promoted, preventing the temperature in the portion directly above it from becoming too high. On the other hand, since the top surface of the raised portion 60 is lower than the top surface of the small circular protrusion 21b, excessive promotion of heat movement in the portion directly above it can also be prevented, thus preventing the temperature in the portion directly above it from becoming too low. Therefore, it is possible to suppress the portion directly above the electrode through-hole 23 from becoming a hot spot or other anomaly.

[0043] Furthermore, the raised portion 60 and the ceramic plate 20 are integrally formed. Typically, the thermal conductivity of the ceramic plate 20 is higher than that of the heat-conducting gas (for example, the thermal conductivity of alumina is approximately 30 W / mK, that of aluminum nitride is approximately 150 W / mK, and that of helium depends on the gas pressure used, but is approximately 0.02 W / mK). Therefore, by making the raised portion 60 and the ceramic plate 20 integrally formed (making the raised portion 60 a part of the ceramic plate 20), the raised portion 60 can be formed relatively easily.

[0044] Furthermore, the upper surface of the porous plug 50 is at the same height as the upper surface of the raised portion 60. Therefore, it is easier to process compared to the case where the upper surface of the porous plug 50 and the upper surface of the raised portion 60 are at different heights.

[0045] Furthermore, the depth Y from the top surface of the small circular protrusion 21b to the top surface of the raised portion 60 is preferably more than 1 / 2 and less than 2 / 3 of the height A from the reference surface 21c to the top surface of the small circular protrusion 21b. If the depth Y is greater than 2 / 3 of the height A, the heat in the portion directly above the electrode through hole 23 will not easily move sufficiently to the cooling plate 30, which is undesirable. If the depth Y is less than 1 / 2 of the height A, the heat in the portion directly above the electrode through hole 23 may move excessively to the cooling plate 30 or hinder the flow of heat-conducting gas, which is also undesirable.

[0046] Furthermore, the raised portion 60 is annular in plan view, and its outer diameter X is larger than the diameter C of the porous plug 50 and smaller than the diameter B of the electrode through hole 23. Therefore, the effects of the present invention are readily obtained.

[0047] It should be noted that the present invention is not limited to any of the above embodiments. Of course, any implementation can be carried out in various ways as long as it falls within the technical scope of the present invention.

[0048] In the above embodiments, the following methods can be adopted: Figure 4 The shown plug 150 replaces the porous plug 50. The plug 150 is a component that provides a gas flow path 154 within a cylindrical dense body 152. The dense body 152 is formed of a material (e.g., a ceramic material) with a thermal conductivity higher than that of helium, the thermally conductive gas. The gas flow path 154 is a spiral-shaped flow path provided inside the dense body 152, and is open on the upper and lower surfaces of the dense body 152. Therefore, gas can flow in the vertical direction. In this case, the outer diameter of the gas flow path 154 is the diameter of the outer periphery of the gas flow path 154 when viewed from above. Even when the plug 150 is used instead of the porous plug 50, the same effect as in the above embodiment is obtained. It should be noted that the shape of the gas flow path 154 is not limited to a spiral shape; for example, it can be serrated.

[0049] The above embodiments provide an example where the length of the porous plug 50 in the vertical direction is the same as the length of the plug placement hole 24 in the vertical direction, but this is not particularly limiting. For example, Figure 3 Alternatively, the length of the porous plug 50 in the vertical direction can be shortened, and the lower surface of the porous plug 50 can be positioned above the lower opening of the plug placement hole 24. Or, the length of the porous plug 50 in the vertical direction can be lengthened, and the lower surface of the porous plug 50 can be positioned below the lower opening of the plug placement hole 24 and inside the insulating tube 70. Or, as... Figure 5 As shown, a stepped plug placement hole 224 with an upper large diameter portion and a lower small diameter portion can be provided on the ceramic plate 20, and a porous plug 250 can be disposed on the upper large diameter portion. Regardless of the configuration used, the same effect as the above-described embodiment is obtained. It should be noted that... Figure 5 In this document, the same symbols are used to mark the same constituent elements as in the above embodiments. Figure 5 In the middle, it can be adopted Figure 4 The 150 plug replaces the porous 250 plug.

[0050] In the above embodiment, the upper surface of the porous plug 50 is at the same height as the upper surface of the raised portion 60, but it is not particularly limited to this. For example, it can be used... Figure 6 The structure shown. Figure 6 In this structure, the upper surface of the porous plug 250 is lower than the upper surface of the raised portion 60, which has a plug cover 261 that covers the upper surface of the porous plug 250. The plug cover 261 has a large number of small holes 262 that extend vertically and communicate with the porous plug 250 (gas flow path). The plug cover 261 can be integral with the ceramic plate 20, or it can be a separate ceramic cap. Even when using… Figure 6In the case of this configuration, the same effect as in the above embodiment is obtained. Furthermore, the porous plug 250 is protected by the plug cover portion 261. It should be noted that... Figure 6 In this document, the same symbols are used to mark the same constituent elements as in the above embodiments.

[0051] The above embodiments illustrate a case where the porous plug 50 and the raised portion 60 are separate components, but this is not a particular limitation. For example, other designs may be used. Figure 7 The structure shown. Figure 7 The plug 150 is a component with a gas flow path 154 provided in a cylindrical dense body 152 as described above (see reference). Figure 4 This is a replacement for the porous plug 50 and the raised portion 60. In this case, the plug configuration hole 324 and... Figure 2 The plug configuration hole 24 is similarly located in the area surrounded by a plurality of small circular protrusions 21b. The vertical length of the plug 150 is longer than the vertical length of the plug configuration hole 324. Therefore, the plug 150 protrudes upward from the upper opening of the plug configuration hole 324, and the dense portion 156 of this protruding portion surrounds the gas flow path 154. Figure 7 The annular portion (enclosed by a single-dot dash) functions as a raised section. The outer diameter X of the annular portion 156, which serves as the raised section, is larger than the outer diameter C of the gas flow path 154 and is less than the diameter B of the electrode through-hole 23. Even when using... Figure 7 In the case of this configuration, the same effect as in the above-described embodiment is obtained. Furthermore, by making the plug 150 a component in which a gas flow path 154 is formed in the dense body 152, it is not necessary to provide a raised portion separately from the plug 150. It should be noted that... Figure 7 In this document, the same symbols are used to mark the same constituent elements as in the above embodiments.

[0052] In the above embodiment, an insulating tube 70 is provided; however, the insulating tube 70 can be omitted. Alternatively, a gas channel structure can be provided instead of providing gas holes 34 in the cooling plate 30. As a gas channel structure, a structure can be adopted that includes: an annular portion disposed inside the cooling plate 30 and concentric with the cooling plate 30 when viewed from above; an inlet portion for introducing gas from the back of the cooling plate 30 into the annular portion; and a distribution portion (equivalent to the aforementioned gas holes 34) for distributing gas from the annular portion to each porous plug 50. The number of inlet portions is less than the number of distribution portions; for example, it can be one. Alternatively, the annular portion of the gas channel structure can be the interior of the ceramic plate 20.

[0053] In the above embodiment, an electrostatic electrode is exemplified as the electrode 22 built into the ceramic plate 20, but it is not particularly limited to this. For example, in addition to the electrode 22, a heater electrode (resistive heating element) or an RF electrode may be built into the ceramic plate 20.

[0054] In the above embodiments, the ceramic plate 20 and the cooling plate 30 are joined by a metal bonding layer 40. However, a resin adhesive layer can be used instead of the metal bonding layer 40.

[0055] Industrial availability

[0056] This invention can be used in components for semiconductor manufacturing apparatus.

[0057] Symbol Explanation

[0058] 10 Components for semiconductor manufacturing apparatus, 20 Ceramic plate, 21 Wafer placement surface, 21a Sealing strip, 21b Circular protrusion, 21c Reference surface, 22 Electrode, 23 Electrode through hole, 24 Plug placement hole, 30 Cooling plate, 32 Refrigerant flow path, 34 Gas hole, 40 Metal bonding layer, 42 Circular hole, 50 Porous plug, 60 Protrusion, 70 Insulating tube, 150 Plug, 152 Dense body, 154 Gas flow path, 156 Dense part, 224 Plug placement hole, 250 Porous plug, 261 Plug cover, 262 Small hole, 324 Plug placement hole.

Claims

1. A component for a semiconductor manufacturing apparatus, wherein, have: A ceramic plate having a wafer mounting surface on its upper surface and an embedded electrostatic electrode, wherein the reference surface of the wafer mounting surface is provided with a large number of small protrusions to support the wafer. A plug configuration hole is provided on the ceramic plate in a manner that extends in the vertical direction; An electrostatic electrode opening is provided at the position through which the plug configuration hole of the electrostatic electrode passes, and has a diameter that is the same as or larger than that of the plug configuration hole. A cooling plate is disposed on the lower surface of the ceramic plate; A gas hole extends through the cooling plate in a vertical direction and communicates with the plug configuration hole; A plug, which is disposed in the plug configuration hole and has a gas flow path for heat-conducting gas to flow in the vertical direction; as well as A raised portion is configured to surround the gas flow path, with its top surface higher than the reference surface and lower than the top surface of the small protrusion.

2. The component for a semiconductor manufacturing apparatus according to claim 1, wherein, The raised portion and the ceramic plate are an integral part.

3. The component for a semiconductor manufacturing apparatus according to claim 1, wherein, The raised portion has a plug cover portion that covers the upper surface of the plug. The plug cover has a small hole that runs through it in the vertical direction.

4. The component for a semiconductor manufacturing apparatus according to claim 1, wherein, The plug is a component in a dense material that has the gas flow path.

5. The component for a semiconductor manufacturing apparatus according to claim 1, 2, or 4, wherein, The plug configuration hole is configured to penetrate the ceramic plate in the vertical direction. The plug protrudes from the upper opening of the plug configuration hole and functions as the raised portion. The upper surface of the plug is at the same height as the upper surface of the raised portion.

6. A component for a semiconductor manufacturing apparatus according to any one of claims 1 to 4, wherein, The depth from the top surface of the small protrusion to the top surface of the raised portion is more than 1 / 2 and less than 2 / 3 of the height from the reference plane to the top surface of the small protrusion.

7. A component for a semiconductor manufacturing apparatus according to any one of claims 1 to 4, wherein, The raised portion appears ring-shaped when viewed from above. The outer diameter of the raised portion is larger than the outer diameter of the gas flow path and is less than the diameter of the opening of the electrostatic electrode.

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