Method and device for testing damp-heat coupling performance of crimping type insulated gate bipolar transistor, and medium

Abstract

The invention relates to a damp-heat coupling performance testing method and device for a crimping type insulated gate bipolar transistor and a medium. The method comprises the steps that S1, the contact resistance, current and switching loss of a tested crimping type IGBT module are collected; s2, based on the collected contact resistance, current, voltage and switching loss, respectively comparing with standard values to obtain variations of the contact resistance, the switching loss, the current and the conduction voltage drop; s3, based on the variation of the contact resistance, the current, the voltage and the switching loss, combining the respective predicted aging factors to obtain a comprehensive aging evaluation value; and S4, dynamically adjusting a failure threshold based on the combination of the temperature and humidity of the use environment and the use duration, comparing the comprehensive aging evaluation value with the adjusted failure threshold, and if the comprehensive aging evaluation value is greater than the adjusted failure threshold, determining that the tested crimping type IGBT module fails. Compared with the prior art, the method has the advantages of improving the accuracy rate and the like.

Description

Test methods, apparatus and dielectric for damp-heat coupling performance of press-fit insulated gate bipolar transistors Technical Field

[0001] This invention relates to the field of semiconductor device testing, and in particular to a method, apparatus, and medium for testing the damp heat coupling performance of a press-fit insulated gate bipolar transistor. Background Technology

[0002] Currently, the performance evaluation of press-fit insulated gate bipolar transistors (IGBTs) typically relies on electrical testing methods, such as measurements of contact resistance, voltage, current, and switching losses. These testing methods are widely used for the functional evaluation of IGBT modules, assessing their performance in practical applications by testing under different environmental conditions. Furthermore, some evaluation methods also consider the impact of ambient temperature and humidity on IGBT performance to ensure the stability of the modules under various operating conditions.

[0003] For example, Chinese patent CN106124957A discloses an online monitoring method for the degradation of insulated gate bipolar transistors (IGBTs), which can be applied to monitor the degree of degradation of IGBTs during actual operation, thereby providing early warning before failure. This online monitoring method includes: when the IGBT is not degrading, performing temperature experiments on the IGBT under test, measuring the junction temperature index (constant voltage drop) and the degradation index (on-resistance) characterizing the IGBT junction temperature level at different junction temperatures, and calculating the proportionality coefficient between the change in degradation index and the change in junction temperature index under the same junction temperature change; when the IGBT is degrading, measuring the junction temperature index and degradation index online, and combining the proportionality coefficient obtained from the temperature experiment under normal conditions, optimizing the degradation index to remove the influence of junction temperature, and monitoring the degree of degradation of the IGBT under test based on the optimized degradation index.

[0004] However, existing technologies, including the methods mentioned above, often overlook the coupling effect of multiple environmental factors. Furthermore, they lack a scientific fusion mechanism for multiple different test items, and the determination of the aging factor as a weighting coefficient cannot meet practical requirements. In addition, existing technologies lack the ability to dynamically adjust the failure threshold, resulting in the evaluation results not accurately reflecting the long-term aging trend of modules under different environmental conditions.

[0005] Therefore, a new approach is needed that can comprehensively consider multiple electrical parameters and introduce dynamic failure assessment to more accurately predict module performance degradation and failure risk. Summary of the Invention

[0006] The purpose of this invention is to provide a method for testing the wet and hot coupling performance of a press-fit insulated gate bipolar transistor, which can comprehensively consider multiple electrical parameters and introduce dynamic failure assessment to more accurately predict the performance degradation and failure risk of the module.

[0007] The objective of this invention can be achieved through the following technical solution: A method for testing the damp heat coupling performance of a press-fit insulated gate bipolar transistor (IGBT), comprising: Step S1: collecting the contact resistance, current, and switching loss of the press-fit IGBT module under test; Step S2: comparing the collected contact resistance, current, voltage, and switching loss with standard values ​​to obtain the changes in contact resistance, switching loss, current, and on-state voltage drop; Step S3: obtaining a comprehensive aging assessment value based on the changes in contact resistance, current, voltage, and switching loss, combined with their respective predicted aging factors; Step S4: dynamically adjusting the failure threshold based on the temperature and humidity of the operating environment and the duration of use, comparing the comprehensive aging assessment value with the adjusted failure threshold, and determining that the press-fit IGBT module under test has failed if the value is greater than the adjusted failure threshold.

[0008] The comprehensive aging assessment value is: in: To provide a comprehensive aging assessment value, Let be the aging factor of the i-th test item. Let represent the change in the i-th test item, where i is a positive integer from 1 to 4, representing contact resistance, current, voltage, and switching loss, respectively. n is the number of test items, with a value of 4.

[0009] The changes in contact resistance, switching losses, current, and voltage are the absolute values ​​of the differences between the measured values ​​and the standard values.

[0010] The failure threshold is: in: This is the failure threshold corresponding to the usage duration t. This is the base value for the failure threshold. The temperature change value is the absolute value of the difference between the ambient temperature and the standard temperature. The coefficient for the temperature term is the absolute value of the difference between the ambient humidity and the standard humidity. This represents the humidity change value. The coefficient for the humidity term. The coefficient for the long term is used during the usage period.

[0011] The aging factor is determined based on the following method: Step A1: Obtain multiple test temperatures and humidity levels, and randomly combine them to obtain multiple target temperature and humidity levels. Randomly sort the target temperature and humidity levels to obtain multiple target temperature and humidity sequences of equal length; Step A2: Eliminate some target temperature and humidity sequences based on the maximum difference constraint between adjacent temperature and humidity levels, and use the remaining target temperature and humidity sequences as simulation control sequences, and select one simulation control sequence; Step A3: Place a new press-fit IGBT module of the same model as the press-fit IGBT module under test in a humid heat environment simulation chamber, and control the temperature and humidity in the humid heat environment simulation chamber according to the simulation control sequence. One simulation control sequence is recorded as one cycle simulation. After each cycle simulation, the changes in contact resistance, switching loss, current, and on-state voltage drop are collected. The simulation is performed K times consecutively to obtain K sets of changes in contact resistance, switching loss, current, and on-state voltage drop. Step A4: Determine whether all simulation control sequences have been traversed. If yes, proceed to step A5; otherwise, select the next untraversed simulation control sequence and return to step A3. Step A5: Construct a data matrix from all obtained changes in contact resistance, switching loss, current, and on-state voltage drop, and standardize it according to different test items to obtain a standardized data matrix. Step A6: Calculate the covariance matrix between each test item based on the standardized data matrix. Step A7: Perform eigenvalue decomposition based on the covariance matrix to obtain the first principal component as the load for each test item. Step A8: Normalize the load for each test item to obtain the aging factor for each test item.

[0012] In step A2, if the target temperature and humidity sequence meets any of the following conditions, it shall be removed: the absolute value of the difference between the target temperatures of any two adjacent target temperatures and humidity exceeds the first temperature difference threshold, or the absolute value of the difference between the target humidity of any two adjacent target temperatures and humidity exceeds the first humidity difference threshold.

[0013] All target temperature and humidity sequences have the same length.

[0014] The humid and hot environment simulation chamber is equipped with a water mist generator and a temperature controller.

[0015] A device for testing the wet and hot coupling performance of a press-fit insulated gate bipolar transistor includes a memory, a processor, and a program stored in the memory. When the processor executes the program, it implements the method described above.

[0016] A storage medium having a program stored thereon, which, when executed, implements the method described above.

[0017] Compared with existing technologies, this invention has the following advantages: 1. By defining a fixed aging factor for each test item, the contribution of each physical quantity to the aging process of the IGBT module is quantified. In this way, the changes in different physical quantities can be weighted during module evaluation, thereby more accurately assessing the impact of aging on module performance. Unlike traditional methods that evaluate a single physical quantity, this method provides a more comprehensive evaluation, accurately reflecting the aging trend of the module and improving the reliability and accuracy of performance evaluation.

[0018] 2. A method for dynamically adjusting the failure threshold is proposed, which adjusts the failure threshold in real time by considering the effects of environmental changes and usage time. This method makes the failure threshold no longer a fixed value, but rather constantly changes according to actual working conditions, thus more accurately reflecting the aging process and failure risk of the module under different environments. Compared with the fixed threshold in traditional methods, this method can adapt to more complex application scenarios and significantly improves the accuracy and practicality of failure judgment.

[0019] 3. By comprehensively considering the changes in multiple electrical performance parameters (such as contact resistance, current, and voltage), an aging assessment model was established to fully account for the impact of various factors on module performance. This model, through weighted calculation of changes in different physical quantities, can comprehensively assess the aging process of the module under various environmental conditions, providing greater accuracy than traditional single-physical-quantity assessment methods. Through this innovative model, this invention can provide more reliable failure prediction, helping designers make scientific decisions regarding product optimization and reliability improvement.

[0020] 4. By combining environmental changes, usage time, and adjustments to dynamic failure thresholds, a method for predicting the long-term performance of IGBT modules is proposed. Through continuous monitoring of electrical performance and assessment of the overall failure risk of the module based on changes in aging factors, potential problems can be identified in advance, providing a basis for product optimization design. Compared to traditional short-term testing methods, long-term performance prediction can detect performance degradation earlier, extend product lifespan, and improve its long-term stability and reliability. Attached Figure Description

[0021] Figure 1 is a structural schematic diagram of the temperature and humidity simulation test section provided by the present invention; Figure 2 is a schematic diagram of the main steps of the method of the present invention. Detailed Implementation

[0022] The present invention will now be described in detail with reference to the accompanying drawings and specific embodiments. These embodiments are based on the technical solution of the present invention and provide detailed implementation methods and specific operating procedures. However, the scope of protection of the present invention is not limited to the following embodiments.

[0023] Example 1, as shown in Figure 1, is a schematic diagram of the overall structure of a pressure-fit insulated gate bipolar transistor (IGBT) humidity and heat coupling performance testing device. The device includes a core test chamber 1, with a water mist generator 2 on the left side inside to simulate a specific humidity environment. A complete electrical test circuit, including monitoring instruments 6, is set on the right side outside for real-time measurement of electrical parameters. The platform at the bottom of the test chamber forms the IGBT module mounting area 3, used to place the IGBT module under test. The entire device is connected by wiring, demonstrating the integrated functionality of humidity and heat environment simulation, sample mounting, and electrical performance monitoring. The device uses a PID control system to precisely regulate environmental conditions to maintain the stability of the test environment, and aging factor calibration can be achieved through this device.

[0024] In this embodiment, the aging factor is determined in the following way: Step A1: Obtain multiple test temperatures and test humidity, and randomly combine them to obtain multiple target temperatures and humidity, and randomly sort the target temperatures and humidity to obtain multiple target temperature and humidity sequences of equal length; all target temperature and humidity sequences have the same length.

[0025] Step A2: Eliminate some target temperature and humidity sequences based on the maximum difference constraint between adjacent temperature and humidity, and use the remaining target temperature and humidity sequences as simulation control sequences. Select a simulation control sequence. If a target temperature and humidity sequence meets any of the following conditions, it shall be eliminated: the absolute value of the difference between the target temperatures of any two adjacent target temperature and humidity sequences exceeds the first temperature difference threshold, or the absolute value of the difference between the target humidity of any two adjacent target temperature and humidity sequences exceeds the first humidity difference threshold.

[0026] Step A3: Place a new press-fit IGBT module 4 of the same model as the one being tested in the humidity and heat environment simulation chamber 1. Control the temperature and humidity inside the humidity and heat environment simulation chamber 1 according to the simulation control sequence. One simulation control sequence is recorded as one cycle simulation. After each cycle simulation, collect the changes in contact resistance, switching loss, current, and on-state voltage drop. Continue to complete K cycles simulations to obtain K sets of changes in contact resistance, switching loss, current, and on-state voltage drop. Step A4: Determine whether all simulation control sequences have been traversed. If yes, then execute... Step A5: Otherwise, select the next untraversed analog control sequence and return to step A3; Step A5: Construct a data matrix from all the obtained changes in contact resistance, switching loss, current, and on-state voltage drop, and standardize it according to different test items to obtain a standardized data matrix; Step A6: Calculate the covariance matrix between each test item based on the standardized data matrix; Step A7: Perform eigenvalue decomposition based on the covariance matrix to obtain the first principal component as the load of each test item; Step A8: Normalize the load of each test item to obtain the aging factor of each test item.

[0027] After obtaining the aging factor of each test item based on the above method, it can be used for subsequent specific tests. Specifically, a method for testing the damp heat coupling performance of a press-fit insulated gate bipolar transistor is shown in Figure 2, including: Step S1: Collect the contact resistance, current, and switching loss of the press-fit IGBT module 4 under test; Step S2: Based on the collected contact resistance, current, voltage, and switching loss, compare them with the standard values ​​to obtain the changes in contact resistance, switching loss, current, and on-state voltage drop; The changes in contact resistance, switching loss, current, and voltage are the absolute values ​​of the differences between the measured values ​​and the standard values.

[0028] Step S3: Based on the changes in contact resistance, current, voltage, and switching losses, and combined with their respective predicted aging factors, obtain the comprehensive aging assessment value: in: To provide a comprehensive aging assessment value, Let be the aging factor of the i-th test item. Let represent the change in the i-th test item, where i is a positive integer from 1 to 4, representing contact resistance, current, voltage, and switching loss, respectively. n is the number of test items, with a value of 4.

[0029] Step S4: Dynamically adjust the failure threshold based on the temperature and humidity of the usage environment and the usage time. Compare the comprehensive aging assessment value with the adjusted failure threshold. If it is greater than the adjusted failure threshold, the tested press-fit IGBT module 4 is considered to have failed.

[0030] The failure threshold is: in: This is the failure threshold corresponding to the usage duration t. This is the base value for the failure threshold. The temperature change value is the absolute value of the difference between the ambient temperature and the standard temperature. The coefficient for the temperature term is the absolute value of the difference between the ambient humidity and the standard humidity. This represents the humidity change value. The coefficient for the humidity term. The coefficient for the long term is used during the usage period.

[0031] Specifically, in this embodiment, the temperature and humidity of the environment can be obtained by averaging the temperature and humidity. That is, during normal operation, continuous temperature and humidity sequences are collected, and then the average value is calculated to obtain the temperature and humidity of the environment.

[0032] This embodiment addresses situations where temperature and humidity vary significantly in the operating environment. Specifically: 1. Scientific weight allocation: The variations in multiple test items (contact resistance, current, voltage, and switching losses) are processed using PCA. The aging factor is determined based on the covariance structure of the data itself, avoiding subjective bias. This ensures that the weight of each test item reflects its actual contribution to aging, improving the objectivity and accuracy of the assessment.

[0033] 2. Comprehensive simulation of environmental changes: This method uses randomly ordered temperature and humidity sequences for cyclic simulation, covering a variety of environmental combinations, and can effectively capture the impact of temperature and humidity coupling on IGBT modules.

[0034] 3. Adaptable to dynamic environments: It is particularly suitable for application scenarios with significant temperature and humidity changes because the PCA method can integrate data from multiple environmental sequences, and the aging factor has a greater generalization ability, which can accurately predict the long-term performance degradation of the module under complex conditions.

[0035] 4. Data-driven decision-making: Through standardized data matrices and eigenvalue decomposition, the aging factor is derived from a large amount of experimental data, which reduces random errors and provides a reliable basis for failure prediction, in line with the trend of modern reliability engineering.

[0036] Example 2 The main differences between this example and Example 1 are in two aspects: 1. The methods for determining the aging factor are different; 2. The methods for determining the temperature and humidity of the usage environment are different.

[0037] Specifically, as shown in Figure 1, this is a schematic diagram of the overall structure of the pressure-fit insulated gate bipolar transistor (IGBT) humidity and heat coupling performance testing device. The device includes a core test chamber 1, with a water mist generator 2 on the left side inside to simulate a specific humidity environment. A complete electrical test circuit, including monitoring instruments 6, is set on the right side outside for real-time measurement of electrical parameters. The platform at the bottom of the test chamber forms the IGBT module mounting area 3, used to place the IGBT module under test. The entire device is connected by wiring, demonstrating the integrated functionality of humidity and heat environment simulation, sample mounting, and electrical performance monitoring. The device uses a PID control system to precisely regulate environmental conditions to maintain the stability of the test environment, and aging factor calibration can be achieved through this device.

[0038] In this embodiment, the aging factor is determined as follows: Step B1: Obtain multiple test temperatures and test humidity, and randomly combine them to obtain multiple target temperatures and humidity; Step B2: Select a target temperature and humidity; Step B3: Place a new press-fit IGBT module 4 of the same model as the press-fit IGBT module 4 under test in a humid and hot environment simulation chamber 1, control the temperature and humidity in the humid and hot environment simulation chamber 1 to the target temperature and humidity, and continuously perform the pre-configured total test duration, collecting the changes in contact resistance, switching loss, current, and on-state voltage drop; Step B4: Determine whether all target temperatures and humidity have been traversed. If yes, proceed to step B5; otherwise, select the next untraversed target temperature and humidity and return to step B3; Step B5: For each target temperature and humidity, the corresponding changes in contact resistance, switching loss, current, and on-state voltage drop can be obtained, and the changes in contact resistance, switching loss, current, and on-state voltage drop are normalized to obtain their respective aging factors.

[0039] Based on the above method, the aging factor under different target temperatures and humidity levels can be obtained.

[0040] After obtaining the aging factor of each test item based on the above method, it can be used for subsequent specific tests. Specifically, a method for testing the damp heat coupling performance of a press-fit insulated gate bipolar transistor is shown in Figure 2, including: Step S1: Collect the contact resistance, current, and switching loss of the press-fit IGBT module 4 under test; Step S2: Based on the collected contact resistance, current, voltage, and switching loss, compare them with the standard values ​​to obtain the changes in contact resistance, switching loss, current, and on-state voltage drop; The changes in contact resistance, switching loss, current, and voltage are the absolute values ​​of the differences between the measured values ​​and the standard values.

[0041] Step S3: Based on the changes in contact resistance, current, voltage, and switching losses, and combined with their respective predicted aging factors, obtain the comprehensive aging assessment value: in: To provide a comprehensive aging assessment value, Let be the aging factor of the i-th test item. Let represent the change in the i-th test item, where i is a positive integer from 1 to 4, representing contact resistance, current, voltage, and switching loss, respectively. n is the number of test items, with a value of 4.

[0042] Specifically, in this embodiment, it is necessary to match the temperature and humidity of the usage environment with each target temperature and humidity, and take the aging factor corresponding to the closest target temperature and humidity as the aging factor corresponding to the temperature and humidity of the usage environment.

[0043] Step S4: Dynamically adjust the failure threshold based on the temperature and humidity of the usage environment and the usage time. Compare the comprehensive aging assessment value with the adjusted failure threshold. If it is greater than the adjusted failure threshold, the tested press-fit IGBT module 4 is considered to have failed.

[0044] The failure threshold is: in: This is the failure threshold corresponding to the usage duration t. This is the base value for the failure threshold. The temperature change value is the absolute value of the difference between the ambient temperature and the standard temperature. The coefficient for the temperature term is the absolute value of the difference between the ambient humidity and the standard humidity. This represents the humidity change value. The coefficient for the humidity term. The coefficient for the long term is used during the usage period.

[0045] In this embodiment, the scenario where the temperature and humidity of the practical environment remain constant is considered. Specifically: 1. Simple and efficient operation: The method directly tests each temperature and humidity point independently, without the need to generate and traverse complex sequences, reducing testing time and computational resources. For example, in a humid and hot environment simulation chamber, simply controlling the specific temperature and humidity and continuously testing can quickly obtain the aging factor, suitable for production lines or rapid evaluation scenarios.

[0046] 2. Highly Targeted: The aging factor is directly matched to specific temperature and humidity points, making it suitable for use in environments where temperature and humidity remain constant. By matching the ambient temperature and humidity with the target points, the aging factor more closely reflects actual conditions, improving the accuracy of the assessment.

[0047] 3. Easy to implement and interpret: The normalization process is intuitive and does not require advanced statistical knowledge, making it easy for engineers to understand and apply. This lowers the technical threshold and facilitates the promotion and field use of the method.

[0048] 4. Resource saving: Due to the simplified testing process, less equipment and manpower are required, making it particularly suitable for scenarios with limited budgets or small-scale testing, while still providing reasonable failure warnings.

[0049] Example 3: The electronic device of the present invention includes a central processing unit (CPU), which can perform various appropriate actions and processes according to computer program instructions stored in read-only memory (ROM) or loaded from a storage unit into random access memory (RAM). The RAM can also store various programs and data required for device operation. The CPU, ROM, and RAM are interconnected via a bus. Input / output (I / O) interfaces are also connected to the bus.

[0050] Multiple components in the device are connected to the I / O interface, including: input units such as keyboards and mice; output units such as various types of displays and speakers; storage units such as disks and optical discs; and communication units such as network interface cards (NICs), modems, and wireless transceivers. The communication unit allows the device to exchange information / data with other devices through computer networks such as the Internet and / or various telecommunications networks.

[0051] The processing unit executes the various methods and processes described above, such as methods S1-S4. For example, in some embodiments, methods S1-S4 may be implemented as computer software programs tangibly contained in a machine-readable medium, such as a storage unit. In some embodiments, part or all of the computer program may be loaded and / or installed on the device via ROM and / or a communication unit. When the computer program is loaded into RAM and executed by the CPU, one or more steps of methods S1-S4 described above may be performed. Alternatively, in other embodiments, the CPU may be configured to execute methods S1-S4 by any other suitable means (e.g., by means of firmware).

[0052] The functions described above in this document can be performed, at least in part, by one or more hardware logic components. For example, exemplary types of hardware logic components that can be used, without limitation, include: Field Programmable Gate Arrays (FPGAs), Application-Specific Integrated Circuits (ASICs), Application Standard Products (ASSPs), System-on-Chip (SoCs), Complex Programmable Logic Devices (CPLDs), and so on.

[0053] The program code used to implement the methods of the present invention can be written in any combination of one or more programming languages. This program code can be provided to a processor or controller of a general-purpose computer, special-purpose computer, or other programmable data processing device, such that when executed by the processor or controller, the program code causes the functions / operations specified in the flowcharts and / or block diagrams to be implemented. The program code can be executed entirely on the machine, partially on the machine, as a standalone software package partially on the machine and partially on a remote machine, or entirely on a remote machine or server.

[0054] In the context of this invention, a machine-readable medium can be a tangible medium that may contain or store a program for use by or in conjunction with an instruction execution system, apparatus, or device. A machine-readable medium can be a machine-readable signal medium or a machine-readable storage medium. Machine-readable media can include, but are not limited to, electronic, magnetic, optical, electromagnetic, infrared, or semiconductor systems, apparatus, or devices, or any suitable combination of the foregoing. More specific examples of machine-readable storage media include electrical connections based on one or more wires, portable computer disks, hard disks, random access memory (RAM), read-only memory (ROM), erasable programmable read-only memory (EPROM or flash memory), optical fibers, portable compact disk read-only memory (CD-ROM), optical storage devices, magnetic storage devices, or any suitable combination of the foregoing.

[0055] If the aforementioned functions are implemented as software functional units and sold or used as independent products, they can be stored in a computer-readable storage medium. Based on this understanding, the technical solution of this invention, or the part that contributes to the prior art, or a part of the technical solution, can be embodied in the form of a software product. This computer software product is stored in a storage medium and includes several instructions to cause a computer device (which may be a personal computer, server, or network device, etc.) to execute all or part of the steps of the methods described in the various embodiments of this invention. The aforementioned storage medium includes various media capable of storing program code, such as USB flash drives, portable hard drives, read-only memory (ROM), random access memory (RAM), magnetic disks, or optical disks.

Claims

1. A method for testing the damp-heat coupling performance of a press-fit insulated gate bipolar transistor, characterized in that, include: Step S1: Collect the contact resistance, current and switching loss of the pressure-connected IGBT module (4) under test; Step S2: Based on the collected contact resistance, current, voltage and switching loss, compare them with the standard values ​​to obtain the changes in contact resistance, switching loss, current and on-state voltage drop; Step S3: Based on the changes in contact resistance, current, voltage and switching loss, and combined with the predicted aging factors, obtain the comprehensive aging assessment value; Step S4: Based on the temperature and humidity of the usage environment and the usage time, dynamically adjust the failure threshold, compare the comprehensive aging assessment value with the adjusted failure threshold, and if it is greater than the adjusted failure threshold, then the tested pressure-connected IGBT module (4) is considered to have failed.

2. The method for testing the damp-heat coupling performance of a press-fit insulated gate bipolar transistor according to claim 1, characterized in that, The comprehensive aging assessment value is: in: To provide a comprehensive aging assessment value, Let be the aging factor of the i-th test item. Let represent the change in the i-th test item, where i is a positive integer from 1 to 4, representing contact resistance, current, voltage, and switching loss, respectively. n is the number of test items, with a value of 4.

3. The method for testing the damp-heat coupling performance of a press-fit insulated gate bipolar transistor according to claim 2, characterized in that, The changes in contact resistance, switching losses, current, and voltage are the absolute values ​​of the differences between the measured values ​​and the standard values.

4. The method for testing the damp-heat coupling performance of a press-fit insulated gate bipolar transistor according to claim 1, characterized in that, The failure threshold is: in: This is the failure threshold corresponding to the usage duration t. This is the base value for the failure threshold. The temperature change value is the absolute value of the difference between the ambient temperature and the standard temperature. This is the coefficient for the temperature term, taken as the absolute value of the difference between the ambient humidity and the standard humidity. This represents the humidity change value. The coefficient for the humidity term. The coefficient for the long term is used when the term is used.

5. The method for testing the damp-heat coupling performance of a press-fit insulated gate bipolar transistor according to claim 1, characterized in that, The aging factor is determined in the following way: Step A1: Obtain multiple test temperatures and test humidity, and randomly combine them to obtain multiple target temperatures and humidity, and randomly sort the target temperatures and humidity to obtain multiple target temperature and humidity sequences of equal length; Step A2: Based on the maximum difference constraint between adjacent temperatures and humidity, remove some target temperature and humidity sequences, and use the remaining target temperature and humidity sequences as simulation control sequences, and select a simulation control sequence; Step A3: Place a new press-fit IGBT module (4) of the same model as the press-fit IGBT module (4) under test in the damp heat environment simulation chamber (1), and control the temperature and humidity in the damp heat environment simulation chamber (1) according to the simulation control sequence. One simulation control sequence is recorded as one cycle. The simulation process involves collecting changes in contact resistance, switching loss, current, and on-state voltage drop after each cycle. This process is repeated K times to obtain K sets of changes in these parameters. Step A4: Determine if all simulation control sequences have been traversed. If yes, proceed to step A5; otherwise, select the next untraversed simulation control sequence and return to step A3. Step A5: Construct a data matrix from all obtained changes in contact resistance, switching loss, current, and on-state voltage drop, and standardize it according to different test items to obtain a standardized data matrix. Step A6: Calculate the covariance matrix between each test item based on the standardized data matrix. Step A7: Perform eigenvalue decomposition based on the covariance matrix to obtain the first principal component as the load for each test item; Step A8: Normalize the load of each test item to obtain the aging factor of each test item.

6. The method for testing the damp-heat coupling performance of a press-fit insulated gate bipolar transistor according to claim 5, characterized in that, In step A2, if the target temperature and humidity sequence meets any of the following conditions, it shall be removed: the absolute value of the difference between the target temperatures of any two adjacent target temperatures and humidity exceeds the first temperature difference threshold, or the absolute value of the difference between the target humidity of any two adjacent target temperatures and humidity exceeds the first humidity difference threshold.

7. The method for testing the damp-heat coupling performance of a press-fit insulated gate bipolar transistor according to claim 5, characterized in that, All target temperature and humidity sequences have the same length.

8. The method for testing the damp-heat coupling performance of a press-fit insulated gate bipolar transistor according to claim 5, characterized in that, The humid and hot environment simulation chamber (1) is equipped with a water mist generator (2) and a temperature controller.

9. A device for testing the damp-heat coupling performance of a press-fit insulated-gate bipolar transistor, comprising a memory, a processor, and a program stored in the memory, characterized in that, When the processor executes the program, it implements the method as described in any one of claims 1-8.

10. A storage medium having a program stored thereon, characterized in that, When the program is executed, it implements the method as described in any one of claims 1-8.

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