Wiring substrate and display device

Abstract

The occurrence of short circuit is suppressed. A wiring board (21) is provided with a first wiring (26alpha), a first conductive section (17A alpha), a second wiring (26beta), and a second conductive section (17A beta), the first wiring (26alpha) having a first wiring configuration section (26A alpha) comprising a part of a first conductive film and a second wiring configuration section (26B alpha) comprising a part of a second conductive film, the first wiring configuration section (26A alpha) having a first end section (26C alpha), the second wiring configuration section (26B alpha) having a second end section (26C alpha) having a second end section (26C alpha), and the second wiring configuration section (26B alpha) having a second end section (26C alpha). The second wiring configuration section (26B alpha) has a second end section (26D alpha), the first conductive section (17A alpha) is configured from a part of the first conductive film, and the first conductive section (17A alpha) and the second wiring configuration section (26B alpha) are disposed so as to intersect at a first intersection position (CP1).

Description

Wiring board and display device Technical Field

[0001] The technology disclosed in this specification relates to wiring boards and display devices capable of suppressing short circuits. Background Technology

[0002] Conventionally, as an example of a wiring substrate used in liquid crystal display devices, there is a wiring substrate described in Patent Document 1. Patent Document 1 describes an active matrix substrate (semiconductor device) as a wiring substrate. This active matrix substrate includes: a first wiring having a first end; a second wiring insulated from the first wiring and having a second end; a first conductive portion disposed at intervals near the first end and the second end; an insulating layer covering these components; and a second conductive portion on the insulating layer, the insulating layer having a first contact hole overlapping the first end and a second contact hole overlapping the first conductive portion, the second conductive portion being connected to the first end and the first conductive portion in the first contact hole and the second contact hole, the second end being insulated from the first conductive portion, the first conductive portion having a protrusion portion protruding toward the first end, and the insulating layer having a first hole overlapping the protrusion portion of the first conductive portion.

[0003] Prior art literature, patent literature, patent literature 1 International Publication No. 2014 / 115810 The problem this invention aims to solve is that in the active matrix substrate described in Patent Document 1, the end of the gate wiring connected to the gate lead wiring via the third contact hole is on the same straight line as the intersection of the gate lead wiring and the CS trunk line, and the straight-line distance between the end of the gate wiring and the intersection of the gate lead wiring and the CS trunk line is extremely short. Therefore, when ESD (Electrostatic Discharge) occurs, pinholes are easily generated near the intersection of the gate lead wiring and the CS trunk line, which can easily lead to a short circuit between the gate lead wiring and the CS trunk line.

[0004] The technology described in this specification is based on the above-mentioned circumstances and is intended to suppress the occurrence of short circuits.

[0005] Solution to the problem (1) The wiring substrate described in this specification includes: a first wiring; a first conductive portion intersecting a portion of the first wiring; a second wiring spaced apart from the first wiring in a first direction; and a second conductive portion intersecting a portion of the second wiring. The first wiring has a first wiring component formed by a portion of a first conductive film and a second wiring component formed by a portion of a second conductive film. A first insulating film is sandwiched between the second conductive film and the first conductive film. The first wiring component has a first end, and the second wiring component has a second end connected to the first end. The first conductive portion is formed by a portion of the first conductive film, and the first conductive portion intersecting the second conductive portion of the first wiring... The wiring components are arranged crosswise at a first intersection position. The second wiring has a third wiring component formed by a portion of the first conductive film and a fourth wiring component formed by a portion of the second conductive film. In the third wiring component, a third end is arranged at a position in the first direction separated from the first end by a first distance. The fourth wiring component has a fourth end connected to the third end. The second conductive component is formed by a portion of the first conductive film. The second conductive component and the fourth wiring component in the second wiring are arranged crosswise at a second intersection position. In the fourth wiring component, a second intersection position is arranged at a position in the first direction separated from the first intersection position by a second distance. The second distance is different from the first distance.

[0006] (2) In addition, based on (1) above, the wiring substrate may also include: a third wiring disposed at a distance from the second wiring in the first direction; and a third conductive portion intersecting a portion of the third wiring, wherein the third wiring has a fifth wiring component consisting of a portion of the first conductive film and a sixth wiring component consisting of a portion of the second conductive film, wherein a fifth end is disposed at a position in the first direction at a distance from the third end, and the sixth wiring component has a sixth end connected to the fifth end, wherein the third conductive portion is disposed of a portion of the first conductive film, and the third conductive portion and the sixth wiring component in the third wiring are intersected at a third intersection position, wherein the sixth wiring component is disposed at a position in the first direction at a distance from the second intersection position, and the fourth distance may be different from the third distance.

[0007] (3) In addition, based on (2) above, the first wiring, the second wiring and the third wiring of the above wiring substrate can be configured such that the first distance is different from the third distance, but the second distance is equal to the fourth distance.

[0008] (4) In addition, based on (3) above, the wiring substrate may also include: a fourth conductive portion formed by a part of the second conductive film and connected to the second wiring configuration portion; a fifth conductive portion formed by a part of the second conductive film and connected to the fourth wiring configuration portion and disposed at a distance from the fourth conductive portion in the first direction; and a sixth conductive portion formed by a part of the second conductive film and connected to the sixth wiring configuration portion and disposed at a distance from the fourth conductive portion in the first direction relative to the fifth conductive portion, wherein the first wiring is configured such that the first end and the second end are biased away from the fifth conductive portion in the fourth conductive portion in the first direction, the second wiring is configured such that the third end and the fourth end are biased away from the fourth conductive portion in the fifth conductive portion in the first direction, and the third wiring is configured such that the fifth end and the sixth end are biased close to the fifth conductive portion in the sixth conductive portion in the first direction.

[0009] (5) In addition, based on (2) above, the first wiring, the second wiring and the third wiring of the above wiring substrate can be configured such that the first distance is different from the third distance and the second distance is different from the fourth distance.

[0010] (6) Furthermore, based on (5) above, the wiring substrate further comprises: a fourth conductive portion formed by a portion of the second conductive film and connected to the second wiring configuration portion; a fifth conductive portion formed by a portion of the second conductive film and connected to the fourth wiring configuration portion, and disposed at a distance from the fourth conductive portion in the first direction; and a sixth conductive portion formed by a portion of the second conductive film and connected to the sixth wiring configuration portion, and disposed at a distance from the fifth conductive portion in the first direction away from the fourth conductive portion, wherein the first wiring is configured such that the first end and the second end are disposed away from the fourth conductive portion in the first direction. The fifth conductive portion is biased, and the first crossing position is configured to be biased towards the fifth conductive portion along the first direction in the fourth conductive portion. The second wiring is configured such that the third end and the fourth end are biased away from the fourth conductive portion along the first direction in the fifth conductive portion, and the second crossing position is configured to be biased towards the fourth conductive portion along the first direction in the fifth conductive portion. The third wiring is configured such that the fifth end and the sixth end are biased towards the fifth conductive portion along the first direction in the sixth conductive portion, and the third crossing position is configured to be biased away from the fifth conductive portion along the first direction in the sixth conductive portion.

[0011] (7) Furthermore, based on (5) or (6) above, the first wiring component has a first bent portion and a first extension portion. The first bent portion extends from the first end along a second direction intersecting the first direction away from the first conductive portion and then bends along the first direction. The first extension portion extends from the end of the first bent portion along the second direction away from the first end. The third wiring component may have a second bent portion and a second extension portion. The second bent portion extends from the third end along the second direction away from the second conductive portion and then bends along the first direction. The second extension portion extends from the second bent portion away from the first end. The end of the curved portion extends away from the third end along the second direction; the fifth wiring configuration portion has a third curved portion and a third extension portion, the third curved portion extends away from the third conductive portion along the second direction from the fifth end and then bends to extend along the first direction, the third extension portion extends away from the fifth end along the second direction from the end of the third curved portion; the first wiring configuration portion, the third wiring configuration portion and the fifth wiring configuration portion are configured such that the fifth distance between the first extension portion and the second extension portion in the first direction is equal to the sixth distance between the second extension portion and the third extension portion in the first direction.

[0012] (8) In addition, based on (2) above, the first wiring, the second wiring and the third wiring of the above wiring substrate can be configured such that the second distance is different from the fourth distance, but the first distance is equal to the third distance.

[0013] (9) In addition, based on (8) above, the wiring substrate may further include: a fourth conductive portion formed by a part of the second conductive film and connected to the second wiring configuration portion; a fifth conductive portion formed by a part of the second conductive film and connected to the fourth wiring configuration portion and disposed at a distance from the fourth conductive portion in the first direction; and a sixth conductive portion formed by a part of the second conductive film and connected to the sixth wiring configuration portion and disposed at a distance from the fifth conductive portion in the first direction away from the fourth conductive portion, wherein the first wiring is configured such that the first crossing position in the fourth conductive portion is biased toward the fifth conductive portion in the first direction, the second wiring is configured such that the second crossing position in the fifth conductive portion is biased toward the fourth conductive portion in the first direction, and the third wiring is configured such that the third crossing position in the sixth conductive portion is biased away from the fifth conductive portion in the first direction.

[0014] (10) In addition, the above wiring substrate may also include a shift register circuit based on any one of (1) to (9) above. The shift register circuit has a first unit circuit section connected to the second wiring configuration section and a second unit circuit section connected to the fourth wiring configuration section. The first unit circuit section includes the first conductive section, and the second unit circuit section includes the second conductive section. The first conductive section and the second conductive section are arranged at intervals in the first direction.

[0015] (11) In addition, based on (10) above, the first conductive part of the above wiring substrate may be provided with a first protrusion that partially protrudes toward the first end in a second direction that intersects with the first direction, and the distance from the first protrusion to the first end is shorter than the distance from the first intersection position to the first end; the second conductive part may be provided with a second protrusion that partially protrudes toward the third end in a second direction, and the distance from the second protrusion to the third end is shorter than the distance from the second intersection position to the third end.

[0016] (12) In addition, the above wiring substrate may also include a shift register circuit and a fourth wiring in any of (1) to (9) above. The shift register circuit has a first unit circuit section connected to the second wiring configuration section and a second unit circuit section connected to the fourth wiring configuration section. The fourth wiring extends along the first direction in a second direction intersecting the first direction between the shift register circuit and the first end and the third end. The fourth wiring is composed of a portion of the first conductive film. The first conductive portion is composed of the portion of the fourth wiring that intersects with the second wiring configuration section. The second conductive portion is composed of the portion of the fourth wiring that intersects with the fourth wiring configuration section.

[0017] (13) In addition, based on (12) above, the fourth wiring of the above wiring substrate may be provided with a widened portion that partially protrudes toward the first end and the third end in the second direction. The position of the widened portion protruding toward the first end may be closer to the first end than the first intersection position, and the position of the widened portion protruding toward the third end may be closer to the third end than the second intersection position.

[0018] (14) The display device to which the technology described in this specification relates includes a wiring substrate as described in any one of (1) to (13) above, and a counter substrate spaced apart from and disposed opposite to the wiring substrate.

[0019] The invention, based on the technology described in this specification, can suppress the occurrence of short circuits. Attached Figure Description

[0020] Figure 1 is a top view of the liquid crystal panel, driver, and flexible substrate according to Embodiment 1.

[0021] Figure 2 is a cross-sectional view of the liquid crystal panel, driver, and flexible substrate involved in Embodiment 1.

[0022] Figure 3 is a top view of the pixel arrangement of the liquid crystal panel according to Embodiment 1.

[0023] Figure 4 is a cross-sectional view of the pixel TFTs included in the display area of ​​the array substrate constituting the liquid crystal panel according to Embodiment 1.

[0024] Figure 5 is a top view of the shift register circuit and gate wiring of the array substrate according to Embodiment 1.

[0025] Figure 6 is a cross-sectional view of the array substrate according to Embodiment 1 along line vi-vi of Figure 5.

[0026] Figure 7 is a top view of the shift register circuit and gate wiring of the array substrate according to Embodiment 2.

[0027] Figure 8 is a top view of the shift register circuit and gate wiring of the array substrate according to Embodiment 3.

[0028] Figure 9 is a top view of the shift register circuit and gate wiring of the array substrate according to Embodiment 4.

[0029] Figure 10 is a top view of the shift register circuit and gate wiring of the array substrate according to Embodiment 5.

[0030] Figure 11 is a top view of the liquid crystal panel, driver, and flexible substrate according to Embodiment 6.

[0031] Figure 12 is a top view of the shift register circuit and gate wiring of the array substrate according to Embodiment 6.

[0032] Figure 13 is a cross-sectional view of the array substrate according to Embodiment 6 along line xiii-xiii of Figure 12.

[0033] Figure 14 is a top view of the shift register circuit and gate wiring of the array substrate according to Embodiment 7.

[0034] Figure 15 is a cross-sectional view of the connection structure between the gate body portion and the gate lead portion in the array substrate according to Embodiment 8.

[0035] Figure 16 is a cross-sectional view of the connection structure between the gate body portion and the gate lead portion in the array substrate according to Embodiment 9. Detailed Implementation

[0036] <Embodiment 1> Embodiment 1 will be described with reference to Figures 1 to 6. This embodiment uses a liquid crystal display device 10 as an example. Furthermore, some parts of each figure are labeled with the X-axis, Y-axis, and Z-axis, and the directions of each axis are drawn according to the directions shown in the figures. Additionally, the upper side of Figures 2, 4, and 6 is designated as the surface side, and the lower side is designated as the back side.

[0037] As shown in Figure 1, the liquid crystal display device 10 includes at least: a liquid crystal panel (display device, display panel) 11 that is horizontally rectangular and capable of displaying images; and a backlight device (illumination device) that illuminates the liquid crystal panel 11 with light for display. The backlight device is disposed on the back side (reverse side) of the liquid crystal panel 11 and has a light source (such as an LED) that emits white light and optical components that apply optical action to the light from the light source to convert it into planar light. The central portion of the main surface of the liquid crystal panel 11 is the display area AA for displaying images. In contrast, the outer periphery of the main surface of the liquid crystal panel 11, which is in the shape of a border, is the non-display area NAA for not displaying images.

[0038] As shown in Figure 1, a gate driving circuit 14 is provided in the non-display area NAA of the liquid crystal panel 11. The gate driving circuits 14 are arranged in pairs, flanking the display area AA from both sides in the X-axis direction. The gate driving circuits 14 are disposed within a strip-shaped area extending along the Y-axis direction. The gate driving circuits 14 supply scan signals to the gate wiring 26 described later, and are disposed monolithically on the array substrate 21 described later. The gate driving circuits 14 are GDM (GateDriver Monolithic) circuits. The gate driving circuits 14 include a shift register circuit 16 that outputs scan signals in a predetermined timing sequence, and a buffer circuit for amplifying the scan signals, etc. (Refer to Figure 5). The shift register circuit 16 will be described separately later.

[0039] The liquid crystal panel 11 will be described with reference to Figures 1 and 2. As shown in Figures 1 and 2, the liquid crystal panel 11 is formed by bonding a pair of substrates 20 and 21. Of the pair of substrates 20 and 21, the front side is the opposing substrate 20, and the back side is the array substrate (wiring substrate) 21. Both the opposing substrate 20 and the array substrate 21 are formed by laminating various films on the inner surface of a glass substrate. Between the pair of substrates 20 and 21, a liquid crystal layer 22 containing liquid crystal molecules is sandwiched; these liquid crystal molecules are substances whose optical properties change when an electric field is applied. Between the outer peripheral ends of the pair of substrates 20 and 21, a sealing portion 23 for sealing the liquid crystal layer 22 is sandwiched. The sealing portion 23 is in the shape of a square frame surrounding the liquid crystal layer 22. Furthermore, polarizers 15 are respectively bonded to the outer surface of the two substrates 20 and 21.

[0040] As shown in Figures 1 and 2, the short side dimension of the opposing substrate 20 is smaller than that of the array substrate 21. The opposing substrate 20 is attached to the array substrate 21 with one end aligned in the short side direction (Y-axis direction). Therefore, the other end of the array substrate 21 in the short side direction is an exposed portion 21A that protrudes laterally relative to the opposing substrate 20. This exposed portion 21A is entirely a non-display area NAA, on which a driver 12 for supplying various signals and a flexible substrate 13 are mounted.

[0041] The driver 12 is composed of an LSI chip, which contains driving circuitry. The driver 12 is mounted on the exposed portion 21A of the array substrate 21 using a COG (Chip On Glass) method. The driver 12 processes various signals transmitted through the flexible substrate 13. As shown in Figures 1 and 2, the driver 12 is configured to be adjacent to one side of the display area AA in the Y-axis direction and sandwiched between the flexible substrate 13 and the display area AA, as described below. The driver 12 has a horizontally rectangular planar shape. The driver 12 can supply various signals to the source wiring 27 and other features of the array substrate 21. The flexible substrate 13 is formed by creating multiple wiring patterns on a substrate made of an insulating and flexible synthetic resin material (e.g., polyimide resin). One end of the flexible substrate 13 is connected to the exposed portion 21A of the array substrate 21, and the other end is connected to an external circuit board (control board, etc.).

[0042] Next, the structure of the display area AA of the array substrate 21 will be described with reference to FIG. 3. As shown in FIG. 3, at least pixel TFTs (transistors, switching elements) 24 and pixel electrodes 25 are provided on the inner surface side of the display area AA of the array substrate 21. The pixel TFTs 24 and pixel electrodes 25 are arranged in a matrix (row and column) at intervals along the X-axis and Y-axis directions. Around these pixel TFTs 24 and pixel electrodes 25, mutually orthogonal (crossing) gate wiring (scan wiring) 26 and source wiring (image wiring, signal wiring) 27 are arranged. The gate wiring 26 extends along the X-axis direction (a second direction intersecting the first direction), and the multiple gate wirings are arranged at intervals along the Y-axis direction (the first direction). The multiple gate wirings 26 are arranged at equal intervals in the Y-axis direction. The source wirings 27 extend along the Y-axis direction, and the multiple source wirings are arranged at intervals along the X-axis direction. The multiple source wirings 27 are arranged at equal intervals in the X-axis direction.

[0043] As shown in Figure 3, the pixel TFT 24 has a gate electrode 24A connected to the gate wiring 26, a source electrode 24B connected to the source wiring 27, a drain electrode 24C connected to the pixel electrode 25, and a semiconductor portion 24D made of semiconductor material connected to the source electrode 24B and the drain electrode 24C. The pixel TFT 24 is driven based on a scan signal supplied to the gate electrode 24A from the gate wiring 26. This scan signal contains a potential higher than the threshold voltage of the pixel TFT 24. At this time, a channel region is generated in the semiconductor portion 24D, so that charge can move between the source electrode 24B and the drain electrode 24C via the channel region. Therefore, the potential corresponding to the image signal (data signal) supplied to the source electrode 24B from the source wiring 27 is supplied to the drain electrode 24C via the semiconductor portion 24D. As a result, the pixel electrode 25 is charged to the potential corresponding to the image signal. The planar shape of the pixel electrode 25 is, for example, generally rectangular in the longitudinal direction, and is disposed in the region enclosed by two adjacent gate wirings 26 spaced apart along the Y-axis and two adjacent source wirings 27 spaced apart along the X-axis. The dimensions of the multiple pixel electrodes 25 are uniform when viewed from above (dimensions in both the X-axis and Y-axis directions).

[0044] Furthermore, in the display area AA of the opposing substrate 20, multiple color filters are provided at positions opposite to each pixel electrode 25 on the array substrate 21 side. The color filters are composed of three colors—R (red), G (green), and B (blue)—arranged in a predetermined order, forming pixels of each color (red pixel, green pixel, and blue pixel) together with the pixel electrodes 25. These three pixels—red, green, and blue—constitute a display pixel capable of achieving a predetermined grayscale color display. Additionally, a light-blocking portion (black matrix) is formed between each color filter to prevent color mixing. Furthermore, on the innermost surface (uppermost layer) of both substrates 20 and 21 that contacts the liquid crystal layer 22, alignment films (not shown) are formed to align the liquid crystal molecules contained in the liquid crystal layer 22.

[0045] Furthermore, as shown in FIG4, the array substrate 21 is provided with a common electrode 28 that is spaced apart from and overlapped with the pixel electrodes 25. The common electrode 28 has a size approximately the same as the display area AA. The common electrode 28 is overlapped with all the pixel electrodes 25 on the lower layer side. The common electrode 28 is supplied with a common potential (reference potential). The liquid crystal panel 11 applies a predetermined electric field to the liquid crystal layer 22 based on the potential difference generated between the common electrode 28 and each pixel electrode 25, thereby enabling each pixel to achieve a predetermined grayscale display. The pixel electrode 25 disposed on the upper layer side of the common electrode 28 is provided with a slit. When the pixel electrode 25 is charged to a potential based on the image signal as the pixel TFT 24 is driven, a potential difference is generated between the pixel electrode 25 and the common electrode 28. At this time, an edge electric field (tilted electric field) including a component relative to the normal direction of the main surface of the array substrate 21 is also generated between the slit opening edge of the pixel electrode 25 and the common electrode 28, in addition to the component along the main surface of the array substrate 21. Therefore, the orientation state of the liquid crystal molecules contained in the liquid crystal layer 22 can be controlled by the edge electric field, and a specified display can be achieved based on the orientation state of the liquid crystal molecules. That is, the operating mode of the liquid crystal panel 11 in this embodiment is FFS (Fringe Field Switching) mode.

[0046] Next, the various films stacked on the glass substrate (substrate) 21GS of the array substrate 21 will be described in detail with reference to FIG4. FIG4 shows the cross-sectional structure of the pixel TFT 24. As shown in FIG4, on the glass substrate 21GS of the array substrate 21, a first metal film (first conductive film), a gate insulating film (first insulating film) 29, a semiconductor film, a second metal film (second conductive film), a first interlayer insulating film 30, a planarization film 31, a first transparent electrode film, a second interlayer insulating film 32, a second transparent electrode film, and an alignment film are sequentially stacked from the lower layer side (glass substrate 21GS side).

[0047] Both the first and second metal films are single-layer films made of a single metal material, or multilayer films and alloys made of different types of metal materials, thus possessing conductivity and light-shielding properties. The first metal film constitutes part of the gate wiring 26, the gate electrode 24A of the pixel TFT 24, etc. The second metal film constitutes part of the gate wiring 26, the source wiring 27, the source electrode 24B and drain electrode 24C of the pixel TFT 24, etc. The semiconductor film is made of semiconductor materials such as oxide semiconductor materials and amorphous silicon materials. The semiconductor film constitutes the semiconductor portion 24D of the pixel TFT 24, etc. The first and second transparent electrode films are made of transparent electrode materials (such as ITO (indium tin oxide), IZO (indium zinc oxide), etc.). The first transparent electrode film constitutes the common electrode 28, etc. The second transparent electrode film constitutes the pixel electrode 25, etc.

[0048] The gate insulating film 29, the first interlayer insulating film 30, and the second interlayer insulating film 32 are all made of one of the inorganic materials (inorganic resin materials), such as SiO2 (silicon oxide, silicon oxide) and SiNx (silicon nitride). The planarization film 31 is an organic insulating film made of organic materials such as PMMA (acrylic resin). The thickness of the planarization film 31 is much greater than the thickness of the gate insulating film 29, the first interlayer insulating film 30, and the second interlayer insulating film 32. Through this planarization film 31, the inner surface of the array substrate 21 (the surface on the side of the liquid crystal layer 22) is planarized.

[0049] The structure of the pixel TFT 24 is described in detail below. As shown in FIG. 4, the gate electrode 24A of the pixel TFT 24 is connected near the intersection of the gate wiring 26 and the source wiring 27. The source electrode 24B of the pixel TFT 24 is connected near the intersection of the source wiring 27 and the gate wiring 26. The source electrode 24B extends along the X-axis, and its end opposite to the source wiring 27 side is connected to the semiconductor portion 24D. The drain electrode 24C of the pixel TFT 24 is disposed at a position spaced apart from the source electrode 24B in the X-axis direction. The drain electrode 24C extends along the X-axis, with one end (left side of FIG. 4, source electrode 24B side) connected to the semiconductor portion 24D, and the other end (right side of FIG. 4) connected to the pixel electrode 25. In the first interlayer insulating film 30, the planarization film 31, and the second interlayer insulating film 32 sandwiched between the drain electrode 24C and the pixel electrode 25, a pixel contact hole PXCH is provided at a position that overlaps with both the drain electrode 24C and the pixel electrode 25. The drain electrode 24C and the pixel electrode 25 are interconnected through the pixel contact hole PXCH.

[0050] As shown in Figure 4, the semiconductor portion 24D constituting the pixel TFT 24 extends along the X-axis. The size of the semiconductor portion 24D in the X-axis direction is smaller than that of the gate electrode 24A. The semiconductor portion 24D overlaps with the gate electrode 24A through the gate insulating film 29. One end of the semiconductor portion 24D along the X-axis is connected to the source electrode 24B. The other end of the semiconductor portion 24D along the X-axis is connected to the drain electrode 24C. In the semiconductor portion 24D, the portion sandwiched between the source electrode 24B and the drain electrode 24C along the X-axis generates a channel region when the pixel TFT 24 is driven. The channel region is the portion of the semiconductor portion 24D that overlaps with the gate electrode 24A but does not overlap with the source electrode 24B or the drain electrode 24C.

[0051] It should be noted that the gate insulating film 29 maintains an insulating state between the lower-side first metal film and the upper-side semiconductor film and second metal film. For example, the intersection of the gate wiring 26 made of the first metal film and the source wiring 27 made of the second metal film is maintained by the gate insulating film 29. Furthermore, in the pixel TFT 24, the overlapping position of the gate electrode 24A made of the first metal film and the semiconductor portion 24D made of the semiconductor film is maintained by the gate insulating film 29. The first interlayer insulating film 30 and the planarization film 31 maintain an insulating state between the lower-side semiconductor film and the second metal film and the upper-side first transparent electrode film. The second interlayer insulating film 32 maintains an insulating state between the lower-side first transparent electrode film and the upper-side second transparent electrode film. For example, the common electrode 28 made of the first transparent electrode film and the pixel electrode 25 made of the second transparent electrode film are maintained by the second interlayer insulating film 32.

[0052] Next, the shift register circuit 16 constituting the gate drive circuit 14 will be described in detail with reference to Figures 5 and 6. The shift register circuit 16 includes unit circuit sections 16U as shown in Figure 5. Multiple unit circuit sections 16U are arranged along the Y-axis. The multiple unit circuit sections 16U are connected to various wirings (e.g., start pulse wiring, multiple clock wirings, set wiring, reset wiring, etc.) provided in the non-display area NAA of the array substrate 21, and operate based on various signals (e.g., start pulse signal, multiple clock signal, set signal, reset signal, etc.) transmitted through the various wirings. The multiple unit circuit sections 16U are respectively connected to multiple gate wirings 26, and by operating based on the above-mentioned signals, scan signals can be sequentially supplied to the multiple gate wirings 26 from the upper section side.

[0053] The unit circuit section 16U includes a plurality of non-pixel TFTs and a capacitor 17 shown in FIG. 5. The plurality of non-pixel TFTs included in the unit circuit section 16U, like the pixel TFTs 24 disposed in the display area AA, are patterned from a first metal film, a semiconductor film, and a second metal film, and have a structure substantially the same as the pixel TFTs 24 described above. Among the plurality of non-pixel TFTs is an output TFT that outputs a signal that serves as the source of a scan signal. The capacitor 17 is used to bootstrap the potential corresponding to the output signal output from the output TFT and outputs a scan signal containing a potential higher than the threshold voltage of the pixel TFT 24, and is connected to the gate wiring 26.

[0054] As shown in Figure 6, the capacitor 17 has a lower electrode 17A formed by a portion of a first metal film, and an upper electrode 17B formed by a portion of a second metal film and overlapping with the lower electrode 17A. A portion of a gate insulating film 29 is sandwiched between the overlapping lower electrode 17A and the upper electrode 17B, which functions as the dielectric of the capacitor 17. As shown in Figure 5, the lower electrode 17A is larger than the upper electrode 17B when viewed from above. The outer peripheral end portion of the lower electrode 17A protrudes outward from the outer peripheral end of the upper electrode 17B and is not overlapped with it. The two lower electrodes 17A constituting the two capacitors 17 included in two adjacent unit circuit sections 16U along the Y-axis are arranged side-by-side with a gap along the Y-axis. The plurality of lower electrodes 17A arranged side-by-side along the Y-axis are equally spaced. It should be noted that the plurality of upper electrodes 17B arranged side-by-side along the Y-axis are also equally spaced. Gate wiring 26 is connected to the upper electrode 17B that constitutes capacitor 17.

[0055] Next, the structure of the gate wiring 26 connected to the unit circuit section 16U will be described in detail with reference to Figures 5 and 6. As shown in Figure 5, the gate wiring 26 has a gate body portion 26A that spans the display area AA and the non-display area NAA, and a gate lead-out portion 26B disposed in the non-display area NAA. The gate body portion 26A extends along the X-axis direction, spans the entire display area AA, and one or both of its end portions are disposed in the non-display area NAA. Specifically, the gate body portion 26A is composed of a portion of a first metal film and is connected in the display area AA to the gate electrodes 24A of all pixel TFTs 24 arranged in a row along the X-axis direction. The end portion of the gate body portion 26A disposed in the non-display area NAA is wider than the other portions and serves as a body-side connection portion 26C connected to the gate lead-out portion 26B.

[0056] As shown in Figure 5, one end of the gate lead-out portion 26B is connected to the gate body portion 26A, and the other end is connected to the capacitor 17. Specifically, the gate lead-out portion 26B is composed of a portion of the second metal film and is directly connected to the upper electrode 17B of the capacitor 17, which is also composed of a portion of the second metal film. The gate lead-out portion 26B extends from the upper electrode 17B along the X-axis towards the gate body portion 26A (display area AA side). In the gate lead-out portion 26B, the portion extending from the upper electrode 17B intersects with the portion of the lower electrode 17A that protrudes outward from the outer peripheral end of the upper electrode 17B at a crossing position CP. This crossing position CP coincides with the center position of the portion of the gate lead-out portion 26B that intersects with the lower electrode 17A in the line width direction (Y-axis direction). In the gate lead-out portion 26B, the end opposite to the upper electrode 17B is wider than the other portions and serves as the lead-out side connection portion 26D connected to the gate body portion 26A. The lead-out side connection portion 26D overlaps with the main body side connection portion 26C. As shown in FIG6, in the gate insulating film 29, a gate contact hole GCH is provided in the portion that overlaps with both the main body side connection portion 26C and the lead-out side connection portion 26D. The main body side connection portion 26C and the lead-out side connection portion 26D are connected through the gate contact hole GCH.

[0057] Hereinafter, when distinguishing multiple unit circuit sections 16U, the unit circuit section 16U located at the top in FIG. 5 will be referred to as the "first unit circuit section" and marked with the subscript "α" after its reference numerals; the unit circuit section 16U located second from the top in FIG. 5 will be referred to as the "second unit circuit section" and marked with the subscript "β" after its reference numerals; the unit circuit section 16U located third from the top in FIG. 5 will be referred to as the "third unit circuit section" and marked with the subscript "γ" after its reference numerals; the unit circuit section 16U located fourth from the top in FIG. 5 will be referred to as the "fourth unit circuit section" and marked with the subscript "δ" after its reference numerals; the unit circuit section 16U located fifth from the left in FIG. 5 will be referred to as the "fifth unit circuit section" and marked with the subscript "ε" after its reference numerals; when not distinguishing and referring to collectively, no subscript will be marked after the reference numerals.

[0058] Furthermore, when distinguishing the multiple capacitors 17 provided in the multiple unit circuit sections 16U, the capacitor 17 provided in the first unit circuit section 16Uα is referred to as the "first capacitor" and is marked with the subscript "α" after its reference numerals; the capacitor 17 provided in the second unit circuit section 16Uβ is referred to as the "second capacitor" and is marked with the subscript "β" after its reference numerals; the capacitor 17 provided in the third unit circuit section 16Uγ is referred to as the "third capacitor" and is marked with the subscript "γ" after its reference numerals; the capacitor 17 provided in the fourth unit circuit section 16Uδ is referred to as the "fourth capacitor" and is marked with the subscript "δ" after its reference numerals; the capacitor 17 provided in the fifth unit circuit section 16Uε is referred to as the "fifth capacitor" and is marked with the subscript "ε" after its reference numerals; when not distinguishing and referring to them collectively, no subscript is marked after the reference numerals.

[0059] Furthermore, when distinguishing between the multiple lower electrodes 17A and upper electrodes 17B constituting the multiple capacitors 17, the lower electrodes 17A and upper electrodes 17B constituting the first capacitor 17α are referred to as "first lower electrode (first conductive part)" and "first upper electrode (fourth conductive part)" respectively, and are marked with the subscript "α" after their reference numerals; the lower electrodes 17A and upper electrodes 17B constituting the second capacitor 17β are referred to as "second lower electrode (second conductive part)" and "second upper electrode (fifth conductive part)" respectively, and are marked with the subscript "β" after their reference numerals; the lower electrodes 17A and upper electrodes 17B constituting the third capacitor 17γ are referred to as "second lower electrode (second conductive part)" and "second upper electrode (fifth conductive part)" respectively. Electrode 7A and upper electrode 17B are referred to as "third lower electrode (third conductive part)" and "third upper electrode (sixth conductive part)" respectively, and are marked with the subscript "γ" after their reference numerals in the attached drawings. Electrode 17A and upper electrode 17B constituting the fourth capacitor 17δ are referred to as "fourth lower electrode" and "fourth upper electrode" respectively, and are marked with the subscript "δ" after their reference numerals in the attached drawings. Electrode 17A and upper electrode 17B constituting the fifth capacitor 17ε are referred to as "fifth lower electrode" and "fifth upper electrode" respectively, and are marked with the subscript "ε" after their reference numerals in the attached drawings. When referred to collectively without distinction, no subscript is marked after the reference numerals in the attached drawings. The first lower electrode 17Aα and the second lower electrode 17Aβ, which are adjacent along the Y-axis, are arranged side by side with a gap along the Y-axis. The second lower electrode 17Aβ and the third lower electrode 17Aγ, which are adjacent along the Y-axis, are arranged side by side with a gap along the Y-axis. The third lower layer electrode 17Aγ and the fourth lower layer electrode 17Aδ, which are adjacent along the Y-axis, are arranged side by side with a gap along the Y-axis. The fourth lower layer electrode 17Aδ and the fifth lower layer electrode 17Aε, which are adjacent along the Y-axis, are arranged side by side with a gap along the Y-axis.

[0060] Furthermore, when distinguishing multiple gate wirings 26, the gate wiring 26 connected to the first unit circuit section 16Uα is referred to as the "first gate wiring" and is marked with the subscript "α" after its reference numerals; the gate wiring 26 connected to the second unit circuit section 16Uβ is referred to as the "second gate wiring" and is marked with the subscript "β" after its reference numerals; the gate wiring 26 connected to the third unit circuit section 16Uγ is referred to as the "third gate wiring" and is marked with the subscript "γ" after its reference numerals; the gate wiring 26 connected to the fourth unit circuit section 16Uδ is referred to as the "fourth gate wiring" and is marked with the subscript "δ" after its reference numerals; the gate wiring 26 connected to the fifth unit circuit section 16Uε is referred to as the "fifth gate wiring" and is marked with the subscript "ε" after its reference numerals; when not distinguishing and referring to them collectively, no subscript is marked after the reference numerals.

[0061] Furthermore, when distinguishing between the multiple gate body portions 26A and gate lead-out portions 26B constituting the multiple gate wirings 26, the gate body portions 26A and gate lead-out portions 26B constituting the first gate wiring 26α are referred to as "first gate body portion (first wiring constituting portion)" and "first gate lead-out portion (second wiring constituting portion)" respectively, and are marked with the subscript "α" after their reference numerals; the gate body portions 26A and gate lead-out portions 26B constituting the second gate wiring 26β are referred to as "second gate body portion (third wiring constituting portion)" and "second gate lead-out portion (fourth wiring constituting portion)" respectively, and are marked with the subscript "β" after their reference numerals; the gate body portions 26A and gate lead-out portions 26B constituting the third gate wiring 26γ are referred to as "second gate body portion (third wiring constituting portion)" and "second gate lead-out portion (fourth wiring constituting portion)" respectively. The body portion 26A and the gate lead portion 26B are referred to as the "third gate body portion (fifth wiring configuration portion)" and the "third gate lead portion (sixth wiring configuration portion)" respectively, and are marked with the subscript "γ" after their reference numerals; the gate body portion 26A and the gate lead portion 26B constituting the fourth gate wiring 26δ are referred to as the "fourth gate body portion" and the "fourth gate lead portion" respectively, and are marked with the subscript "δ" after their reference numerals; the gate body portion 26A and the gate lead portion 26B constituting the fifth gate wiring 26ε are referred to as the "fifth gate body portion" and the "fifth gate lead portion" respectively, and are marked with the subscript "ε" after their reference numerals; when they are referred to collectively without distinction, no subscript is marked after the reference numerals.

[0062] Furthermore, when distinguishing the multiple main body-side connecting portions 26C provided by the multiple gate main body portions 26A, the main body-side connecting portion 26C provided by the first gate main body portion 26Aα is referred to as the "first main body-side connecting portion (first end)" and is marked with the subscript "α" after its reference numerals; the main body-side connecting portion 26C provided by the second gate main body portion 26Aβ is referred to as the "second main body-side connecting portion (third end)" and is marked with the subscript "β" after its reference numerals; the main body-side connecting portion 26C provided by the third gate main body portion 26Aγ is referred to as the "second main body-side connecting portion (third end)"; and the main body-side connecting portion 26C provided by the third gate main body portion 26Aγ is referred to as the "second main body-side connecting portion (third end)"; The body-side connecting portion 26C is referred to as the "third body-side connecting portion (fifth end portion)" and is marked with the subscript "γ" after its reference numerals; the body-side connecting portion 26C of the fourth gate body portion 26Aδ is referred to as the "fourth body-side connecting portion" and is marked with the subscript "δ" after its reference numerals; the body-side connecting portion 26C of the fifth gate body portion 26Aε is referred to as the "fifth body-side connecting portion" and is marked with the subscript "ε" after its reference numerals; when referred to collectively without distinction, no subscript is marked after the reference numerals.

[0063] Furthermore, when distinguishing the multiple lead-side connection portions 26D provided by the multiple gate lead portions 26B, the lead-side connection portion 26D provided by the first gate lead portion 26Bα is referred to as the "first lead-side connection portion (second end)" and marked with the subscript "α" after its reference numerals; the lead-side connection portion 26D provided by the second gate lead portion 26Bβ is referred to as the "second lead-side connection portion (fourth end)" and marked with the subscript "β" after its reference numerals; the lead-side connection portion 26D provided by the third gate lead portion 26Bγ is referred to as the "second lead-side connection portion (fourth end)"; and the lead-side connection portion 26D provided by the third gate lead portion 26Bγ is referred to as the "second lead-side connection portion (fourth end)". The output-side connection portion 26D is referred to as the "third output-side connection portion (sixth end)" and is marked with the subscript "γ" after its reference numerals; the output-side connection portion 26D of the fourth gate output portion 26Bδ is referred to as the "fourth output-side connection portion" and is marked with the subscript "δ" after its reference numerals; the output-side connection portion 26D of the fifth gate output portion 26Bε is referred to as the "fifth output-side connection portion" and is marked with the subscript "ε" after its reference numerals; when referred to collectively without distinction, no subscript is marked after the reference numerals.

[0064] Furthermore, when distinguishing multiple gate contact holes (GCH), the gate contact hole GCH connecting the first body-side connection portion 26Cα and the first lead-out side connection portion 26Dα is referred to as the "first gate contact hole (first contact hole)" and is marked with the subscript "α" after its reference numerals; the gate contact hole GCH connecting the second body-side connection portion 26Cβ and the second lead-out side connection portion 26Dβ is referred to as the "second gate contact hole (second contact hole)" and is marked with the subscript "β" after its reference numerals; the gate contact hole GCH connecting the third body-side connection portion 26Cγ and the third lead-out side connection portion 26Dγ is referred to as the "second gate contact hole (second contact hole)"; and the gate contact hole GCH connecting the third body-side connection portion 26Cγ and the third lead-out side connection portion 26Dγ is referred to as the "second gate contact hole (second contact hole)". The gate contact hole GCH is referred to as the "third gate contact hole (third contact hole)" and is marked with the subscript "γ" after its reference numerals in the attached drawing; the gate contact hole GCH connecting the fourth main body side connection portion 26Cδ and the fourth lead-out side connection portion 26Dδ is referred to as the "fourth gate contact hole" and is marked with the subscript "δ" after its reference numerals in the attached drawing; the gate contact hole GCH connecting the fifth main body side connection portion 26Cε and the fifth lead-out side connection portion 26Dε is referred to as the "fifth gate contact hole" and is marked with the subscript "ε" after its reference numerals in the attached drawing; when referred to collectively without distinction, no subscript is marked after the reference numerals in the attached drawing.

[0065] Furthermore, when distinguishing the intersection positions (CP) of multiple gate leads 26B and multiple lower electrode 17A, the intersection position CP of the first gate lead 26Bα and the first lower electrode 17Aα is referred to as the "first intersection position" and marked with a subscript "1" after its reference numerals; the intersection position CP of the second gate lead 26Bβ and the second lower electrode 17Aβ is referred to as the "second intersection position" and marked with a subscript "2" after its reference numerals; the intersection position CP of the third gate lead 26Bγ and the third lower electrode 17Aβ is referred to as the "second intersection position" and marked with a subscript "2" after its reference numerals; the intersection position CP of the third gate lead 26Bγ and the third lower electrode 17Aβ is referred to as the "second intersection position". The intersection position CP of electrode 17Aγ is called the "third intersection position" and is marked with the subscript "3" after its reference numerals; the intersection position CP of the fourth gate lead-out 26Bδ and the fourth lower electrode 17Aδ is called the "fourth intersection position" and is marked with the subscript "4" after its reference numerals; the intersection position CP of the fifth gate lead-out 26Bε and the fifth lower electrode 17Aε is called the "fifth intersection position" and is marked with the subscript "5" after its reference numerals; when referred to collectively without distinction, no subscript is marked after the reference numerals.

[0066] Incidentally, the area of ​​the gate body portion 26A constituting the gate wiring 26 is larger than that of the lower electrode 17A constituting the unit circuit portion 16U. Therefore, during the manufacturing process of the array substrate 21, for example when patterning the first metal film, the gate body portion 26A tends to generate more ground charge than the lower electrode 17A. As a result, there is a concern about electrostatic discharge (ESD) occurring between the body-side connection portion 26C and the cross position CP. If electrostatic damage occurs at the cross position CP, it may cause a short circuit between the gate lead-out portion 26B and the lower electrode 17A.

[0067] Therefore, in this embodiment, as shown in FIG5, the gate lead-out portion 26B constituting the gate wiring 26 is configured such that one end connected to the gate body portion 26A (the connection portion to the gate body portion 26A) and the other end connected to the upper electrode 17B of the capacitor 17 (the connection portion to the upper electrode 17B) are offset in the Y-axis direction. Specifically, the planar shape of the gate lead-out portion 26B is a generally L-shaped curved shape, having a cross portion 26B1 extending in the X-axis direction and intersecting with the lower electrode 17A, and an extension portion 26B2 extending in the Y-axis direction. The cross portion 26B1 has the aforementioned other end and is connected to the upper electrode 17B. The extension portion 26B2 bends and extends from the end of the cross portion 26B1 opposite to the side of the upper electrode 17B, and has the aforementioned one end, namely the lead-out side connection portion 26D.

[0068] Furthermore, as shown in FIG5, the bending directions of the gate leads 26B of two adjacent gate wirings 26 spaced apart along the Y-axis, i.e., the directions in which the extensions 26B2 extend from the ends of the intersections 26B1, are opposite. Specifically, the first gate lead 26Bα of the first gate wiring 26α bends upward in FIG5, the second gate lead 26Bβ of the second gate wiring 26β bends downward in FIG5, the third gate lead 26Bγ of the third gate wiring 26γ bends upward in FIG5, the fourth gate lead 26Bδ of the fourth gate wiring 26δ bends downward in FIG5, and the fifth gate lead 26Bε of the fifth gate wiring 26ε bends upward in FIG5. In this embodiment, the first gate wiring 26α, the third gate wiring 26γ, and the fifth gate wiring 26ε have the same planar shape. Furthermore, the second gate wiring 26β and the fourth gate wiring 26δ have the same planar shape.

[0069] Thus, as shown in FIG5, the multiple gate wirings 26 are arranged in alternating different bending directions of the gate leads 26B, such that the distance between two adjacent main body side connection portions 26C along the Y-axis is different from the distance between two adjacent intersection positions CP along the Y-axis. Specifically, the first gate main body portions 26Aα and 26Aβ of the first gate wiring 26α and the second gate wiring 26β are disposed at a position separated by a first distance D1 along the Y-axis between the first main body side connection portion 26Cα and the second main body side connection portion 26Cβ. In contrast, the first gate leads 26Bα and 26Bβ of the first gate wiring 26α and the second gate wiring 26β are disposed at a position separated by a second distance D2 along the Y-axis between the first intersection position CP1 and the second intersection position CP2, and the second distance D2 is different from the first distance D1.

[0070] Furthermore, in this embodiment, as shown in FIG5, the second gate body portions 26Aβ and 26Aγ of the second gate wiring 26β and the third gate wiring 26γ are disposed at a position separated by a third distance D3 along the Y-axis between the second body-side connection portion 26Cβ and the third body-side connection portion 26Cγ. Conversely, the second gate lead portions 26Bβ and 26Bγ of the second gate wiring 26β and the third gate wiring 26γ are disposed at a position separated by a fourth distance D4 along the Y-axis between the second intersection position CP2 and the third intersection position CP3. The fourth distance D4 is different from the third distance D3.

[0071] Here, assuming the gate lead 26B has a straight line shape extending along the X-axis, or that all gate wirings 26 have the same planar shape, the distance between two adjacent main body side connection portions 26C along the Y-axis will be the same as the distance between two adjacent intersection positions CP along the Y-axis. In contrast, in this embodiment, the first gate wiring 26α and the second gate wiring 26β are configured with different first distances D1 and second distances D2, thus ensuring sufficient straight-line distance between the first main body side connection portion 26Cα and the first intersection position CP1, and between the second main body side connection portion 26Cβ and the second intersection position CP2. Therefore, even if the first gate main body portion 26Aα or the second gate main body portion 26Aβ made of the first metal film becomes charged, electrostatic discharge is unlikely to occur between the first main body side connection portion 26Cα and the first intersection position CP1, and also unlikely to occur between the second main body side connection portion 26Cβ and the second intersection position CP2. Since electrostatic damage accompanied by electrostatic discharge is less likely to occur at the first cross position CP1 or the second cross position CP2, it is less likely that the first gate lead 26Bα will be short-circuited with the first lower electrode 17Aα, or the second gate lead 26Bβ will be short-circuited with the second lower electrode 17Aβ.

[0072] Furthermore, compared to the case where the distance between two adjacent main body side connection portions 26C along the Y-axis direction is the same as the distance between two adjacent intersection positions CP along the Y-axis direction, in this embodiment, the second gate wiring 26β and the third gate wiring 26γ are configured with different second distances D2 and third distances D3, thus ensuring a sufficient straight-line distance between the third main body side connection portion 26Cγ and the third intersection position CP3. Therefore, even if the third gate main body portion 26Aγ made of the first metal film becomes charged, electrostatic discharge is less likely to occur between the third main body side connection portion 26Cγ and the third intersection position CP3. Since electrostatic damage accompanied by electrostatic discharge is less likely to occur at the third intersection position CP3, a short circuit between the third gate lead-out portion 26Bγ and the third lower electrode 17Aγ is less likely to occur.

[0073] It should be noted that, as shown in Figure 5, the third gate body portion 26Aγ and the fourth gate body portion 26Aδ of the third gate wiring 26γ and the fourth gate wiring 26δ are disposed at a position separated by a first distance D1 along the Y-axis between the third body-side connecting portion 26Cγ and the fourth body-side connecting portion 26Cδ. Conversely, the third gate lead portion 26Bγ and the fourth gate lead portion 26Bδ of the third gate wiring 26γ and the fourth gate wiring 26δ are disposed at a position separated by a second distance D2 along the Y-axis between the third intersection position CP3 and the fourth intersection position CP4. That is, the positional relationship between the third gate wiring 26γ and the fourth gate wiring 26δ is the same as the positional relationship between the first gate wiring 26α and the second gate wiring 26β.

[0074] Furthermore, as shown in FIG5, the fourth gate body portion 26Aδ and the fifth gate body portion 26Aε of the fourth gate wiring 26δ and the fifth gate wiring 26ε are disposed at a position separated by a third distance D3 along the Y-axis between the fourth body-side connection portion 26Cδ and the fifth body-side connection portion 26Cε. Conversely, the fourth gate lead portion 26Bδ and the fifth gate lead portion 26Bε of the fourth gate wiring 26δ and the fifth gate wiring 26ε are disposed at a position separated by a fourth distance D4 along the Y-axis between the fourth intersection position CP4 and the fifth intersection position CP5. That is, the positional relationship between the fourth gate wiring 26δ and the fifth gate wiring 26ε is the same as the positional relationship between the second gate wiring 26β and the third gate wiring 26γ.

[0075] As shown in Figure 5, the first gate wiring 26α, the second gate wiring 26β, the third gate wiring 26γ, the fourth gate wiring 26δ, and the fifth gate wiring 26ε are configured such that the second distance D2 and the fourth distance D4 are equal. Specifically, each gate lead-out portion 26B of all gate wirings 26 is configured to connect to the central position of each upper electrode 17B along the Y-axis. That is, the gate lead-out portion 26B is configured such that its position along the Y-axis is approximately consistent with the central position of the lower electrode 17A along the Y-axis. Therefore, the intersection positions CP of each gate lead-out portion 26B and each lower electrode 17A are arranged at equal intervals along the Y-axis. That is, the distance (second distance D2 and fourth distance D4) between two adjacent intersection positions CP along the Y-axis is equal. In this way, the positional relationships of the first lower electrode 17Aα and the first gate lead 26Bα along the Y-axis, the positional relationships of the second lower electrode 17Aβ and the second gate lead 26Bβ along the Y-axis, the positional relationships of the third lower electrode 17Aγ and the third gate lead 26Bγ along the Y-axis, the positional relationships of the fourth lower electrode 17Aδ and the fourth gate lead 26Bδ along the Y-axis, and the positional relationships of the fifth lower electrode 17Aε and the fifth gate lead 26Bε along the Y-axis are all the same pattern.

[0076] On the other hand, as shown in FIG5, the first gate wiring 26α, the second gate wiring 26β, the third gate wiring 26γ, the fourth gate wiring 26δ, and the fifth gate wiring 26ε are configured with a first distance D1 and a third distance D3 that are different. Specifically, among two adjacent gate wirings 26 along the Y-axis direction, the main body side connection portion 26C and the lead-out side connection portion 26D, which are the connection points between the gate main body portion 26A and the gate lead-out portion 26B, are configured to be offset along the Y-axis direction relative to the aforementioned intersection position CP (the central position in the lower electrode 17A along the Y-axis direction) to one side (the upper side of FIG5) and the other side (the lower side of FIG5). More specifically, the first main body side connection portion 26Cα and the first lead-out side connection portion 26Dα of the first gate wiring 26α are configured to be biased in the first upper electrode 17Bα at the end opposite to the side of the second upper electrode 17Bβ in the Y-axis direction. The first main body side connection portion 26Cα and the first lead-out side connection portion 26Dα are configured such that their ends along the Y-axis direction are aligned with the ends along the Y-axis direction of the first lower electrode 17Aα. The second main body side connection portion 26Cβ and the second lead-out side connection portion 26Dβ of the second gate wiring 26β are configured such that they are biased at the ends of the second upper electrode 17Bβ that are opposite to the side of the first upper electrode 17Bα along the Y-axis direction. The second main body side connection portion 26Cβ and the second lead-out side connection portion 26Dβ are configured such that their ends along the other side along the Y-axis direction are aligned with the ends along the other side of the second lower electrode 17Aβ along the Y-axis direction.

[0077] As shown in Figure 5, the third gate wiring 26γ is configured such that the third body-side connection portion 26Cγ and the third lead-side connection portion 26Dγ are biased at the end of the third upper electrode 17Bγ along the Y-axis direction near the side of the second upper electrode 17Bβ. The end of the third body-side connection portion 26Cγ and the third lead-side connection portion 26Dγ along the Y-axis direction is aligned with the end of the third lower electrode 17Aγ along the Y-axis direction. The fourth gate wiring 26δ is configured such that the fourth body-side connection portion 26Cδ and the fourth lead-side connection portion 26Dδ are biased at the end of the fourth upper electrode 17Bδ along the Y-axis direction near the opposite side of the third upper electrode 17Bγ. The end of the fourth body-side connection portion 26Cδ and the fourth lead-side connection portion 26Dδ along the other side of the Y-axis direction is aligned with the end of the fourth lower electrode 17Aδ along the other side of the Y-axis direction. The fifth gate wiring 26ε is configured such that the fifth body-side connection portion 26Cε and the fifth lead-side connection portion 26Dε are biased along the Y-axis direction of the fifth upper electrode 17Bε towards the end of the fourth upper electrode 17Bδ. The fifth body-side connection portion 26Cε and the fifth lead-side connection portion 26Dε are configured such that the ends of the fifth lower electrode 17Aε along the Y-axis direction are aligned with the ends of the fifth lower electrode 17Aε along the Y-axis direction.

[0078] In this embodiment, as shown in FIG5, the first distance D1 is greater than the third distance D3. Furthermore, the first distance D1 is greater than the second distance D2 and the fourth distance D4. Furthermore, the third distance D3 is less than the second distance D2 and the fourth distance D4. The value obtained by dividing the sum of the first distance D1 and the third distance D3 by 2 is equal to the arrangement interval of the pixel electrodes 25 along the Y-axis direction in the display area AA (refer to FIG3).

[0079] This maximizes the linear distance between the first main body side connection 26Cα and the first intersection position CP1, where the first main body side connection 26Cα is biased along the Y-axis direction towards the end opposite to the side of the second upper electrode 17Bβ in the first upper electrode 17Bα. It also maximizes the linear distance between the second main body side connection 26Cβ and the second intersection position CP2, where the second main body side connection 26Cβ is biased along the Y-axis direction towards the end opposite to the side of the first upper electrode 17Bα in the second upper electrode 17Bβ. Finally, it maximizes the linear distance between the third main body side connection 26Cγ and the third intersection position CP3, where the third main body side connection 26Cγ is biased along the Y-axis direction towards the end of the second upper electrode 17Bβ in the third upper electrode 17Bγ. The linear distance between the fourth main body side connection 26Cδ and the fourth cross position CP4 can be maximized. The fourth main body side connection 26Cδ is biased at the end of the fourth upper electrode 17Bδ that is closer to the opposite side of the third upper electrode 17Bγ along the Y-axis. The linear distance between the fifth main body side connection 26Cε and the fifth cross position CP5 can be maximized. The fifth main body side connection 26Cε is biased at the end of the fifth upper electrode 17Bε that is closer to the fourth upper electrode 17Bδ along the Y-axis. As described above, by maximizing the linear distance between the main body side connection 26C and the cross position CP, electrostatic discharge is less likely to occur between the main body side connection 26C and the cross position CP.

[0080] In summary, the array substrate (wiring substrate) 21 of this embodiment includes a first gate wiring (first wiring) 26α, a first lower electrode (first conductive portion) 17Aα intersecting a portion of the first gate wiring 26α, a second gate wiring (second wiring) 26β spaced apart from the first gate wiring 26α in a first direction, and a second lower electrode (second conductive portion) 17Aβ intersecting a portion of the second gate wiring 26β. The first gate wiring 26α has a first gate formed by a portion of a first metal film (first conductive film). The main body (first wiring configuration) 26Aα and the first gate lead-out portion (second wiring configuration) 26Bα are formed by a portion of a second metal film (second conductive film) with a gate insulating film (first insulating film) 29 sandwiched between the first metal film and the second metal film. The first gate main body 26Aα has a first main body side connection portion (first end) 26Cα, and the first gate lead-out portion 26Bα has a first lead-out side connection portion (second end) 26Dα connected to the first main body side connection portion 26Cα. The first lower electrode 17Aα is formed by a portion of the first metal film. The lower electrode 17Aα and the first gate lead-out portion 26Bα in the first gate wiring 26α are cross-positioned at the first intersection position CP1. The second gate wiring 26β has a second gate body portion (third wiring component portion) 26Aβ formed by a portion of the first metal film and a second gate lead-out portion (fourth wiring component portion) 26Bβ formed by a portion of the second metal film. In the second gate body portion 26Aβ, a second body side connection portion (third end portion) 26Cβ is arranged at a position separated from the first body side connection portion 26Cα by a first distance D1 in the first direction. The second gate lead-out portion 26Bβ has a second lead-out side connection portion (fourth end) 26Dβ connected to the second main body side connection portion 26Cβ. The second lower electrode 17Aβ is composed of a part of the first metal film. The second lower electrode 17Aβ and the second gate lead-out portion 26Bβ in the second gate wiring 26β are cross-arranged at the second cross position CP2. In the second gate lead-out portion 26Bβ, the second cross position CP2 is arranged at a position that is separated from the first cross position CP1 by a second distance D2 in the first direction, and the second distance D2 is different from the first distance D1.

[0081] When the first gate body portion 26Aα or the second gate body portion 26Aβ made of the first metal film becomes charged, there is a concern that electrostatic discharge may occur between the first body-side connection portion 26Cα and the first cross position CP1, or between the second body-side connection portion 26Cβ and the second cross position CP2. The first cross position CP1 is the intersection of the first gate lead-out portion 26Bα made of the second metal film and the first lower electrode 17Aα, and the second cross position CP2 is the intersection of the second gate lead-out portion 26Bβ made of the second metal film and the second lower electrode 17Aβ. To address this, the second distance D2 separating the first cross position CP1 and the second cross position CP2 in the first direction is different from the first distance D1 separating the first body-side connection portion 26Cα and the second body-side connection portion 26Cβ in the first direction. Thus, compared to the case where the first distance D1 and the second distance D2 are the same, the straight-line distance between the first body-side connection portion 26Cα and the first cross position CP1, and the straight-line distance between the second body-side connection portion 26Cβ and the second cross position CP2, can be sufficiently ensured. Therefore, even if the first gate body portion 26Aα or the second gate body portion 26Aβ made of the first metal film becomes charged, electrostatic discharge is unlikely to occur between the first body-side connection portion 26Cα and the first cross position CP1, and electrostatic discharge is also unlikely to occur between the second body-side connection portion 26Cβ and the second cross position CP2. Since electrostatic damage accompanied by electrostatic discharge is unlikely to occur at the first cross position CP1 or the second cross position CP2, it is less likely that the first gate lead-out portion 26Bα will be short-circuited with the first lower electrode 17Aα, or the second gate lead-out portion 26Bβ will be short-circuited with the second lower electrode 17Aβ.

[0082] In addition, it also includes: a third gate wiring (third wiring) 26γ that is spaced apart from the first gate wiring 26α in a first direction relative to the second gate wiring 26β; and a third lower electrode (third conductive portion) 17Aγ that intersects a portion of the third gate wiring 26γ. The third gate wiring 26γ has a third gate body portion (fifth wiring configuration portion) 26Aγ formed by a portion of a first metal film and a third gate lead portion (sixth wiring configuration portion) 26Bγ formed by a portion of a second metal film. In the third gate body portion 26Aγ, it is spaced apart from the second body side connection portion 26Cβ by a third distance in the first direction. A third main body side connection portion (fifth end) 26Cγ is arranged at a position away from D3. The third gate lead-out portion 26Bγ has a third lead-out side connection portion (sixth end) 26Dγ that is connected to the third main body side connection portion 26Cγ. The third lower electrode 17Aγ is composed of a part of the first metal film. The third lower electrode 17Aγ and the third gate lead-out portion 26Bγ in the third gate wiring 26γ are cross-arranged at the third cross position CP3. In the third gate lead-out portion 26Bγ, the third cross position CP3 is arranged at a position that is separated from the second cross position CP2 by a fourth distance D4 in the first direction. The fourth distance D4 is different from the third distance D3.

[0083] As described above, the fourth distance D4 between the second cross position CP2 and the third cross position CP3 in the first direction is different from the third distance D3 between the second main body side connection portion 26Cβ and the third main body side connection portion 26Cγ in the first direction. Thus, compared to the case where the third distance D3 and the fourth distance D4 are the same, the straight-line distance between the third main body side connection portion 26Cγ and the third cross position CP3 can be sufficiently ensured. Therefore, even if the third gate main body portion 26Aγ, made of the first metal film, becomes charged, electrostatic discharge is less likely to occur between the third main body side connection portion 26Cγ and the third cross position CP3. Since electrostatic damage accompanying electrostatic discharge is less likely to occur at the third cross position CP3, a short circuit between the third gate lead-out portion 26Bγ and the third lower electrode 17Aγ is less likely to occur.

[0084] Furthermore, the first gate wiring 26α, the second gate wiring 26β, and the third gate wiring 26γ are configured such that the first distance D1 and the third distance D3 are different, but the second distance D2 and the fourth distance D4 are equal. This ensures that the positional relationships of the first lower electrode 17Aα and the first gate lead-out portion 26Bα along the first direction, the positional relationships of the second lower electrode 17Aβ and the second gate lead-out portion 26Bβ along the first direction, and the positional relationships of the third lower electrode 17Aγ and the third gate lead-out portion 26Bγ along the first direction are all identical.

[0085] In addition, it also includes: a first upper electrode (fourth conductive portion) 17Bα, which is formed by a portion of the second metal film and is connected to the first gate lead-out portion 26Bα; a second upper electrode (fifth conductive portion) 17Bβ, which is formed by a portion of the second metal film and is connected to the second gate lead-out portion 26Bβ and is arranged at a distance from the first upper electrode 17Bα in the first direction; and a third upper electrode (sixth conductive portion) 17Bγ, which is formed by a portion of the second metal film and is connected to the third gate lead-out portion 26Bγ and is arranged at a distance from the second upper electrode 17Bβ in the first direction away from the first upper electrode 17Bα. The first gate wiring 26α is configured such that the first body-side connection portion 26Cα and the first lead-out side connection portion 26Dα are biased away from the second upper electrode 17Bβ along a first direction in the first upper electrode 17Bα. The second gate wiring 26β is configured such that the second body-side connection portion 26Cβ and the second lead-out side connection portion 26Dβ are biased away from the first upper electrode 17Bα along a first direction in the second upper electrode 17Bβ. The third gate wiring 26γ is configured such that the third body-side connection portion 26Cγ and the third lead-out side connection portion 26Dγ are biased close to the second upper electrode 17Bβ along a first direction in the third upper electrode 17Bγ. This configuration maximizes the straight-line distance between the first body-side connection portion 26Cα and the first intersection position CP1, with the first body-side connection portion 26Cα biased away from the second upper electrode 17Bβ along a first direction in the first upper electrode 17Bα. The linear distance between the second main body side connection 26Cβ and the second intersection position CP2 can be maximized, and the second main body side connection 26Cβ is biased away from the first upper electrode 17Bα in the second upper electrode 17Bβ along the first direction. The linear distance between the third main body side connection 26Cγ and the third intersection position CP3 can be maximized, and the third main body side connection 26Cγ is biased towards the second upper electrode 17Bβ in the third upper electrode 17Bγ along the first direction.

[0086] In addition, a shift register circuit 16 is provided, which has a first unit circuit section 16Uα connected to the first gate lead-out 26Bα and a second unit circuit section 16Uβ connected to the second gate lead-out 26Bβ. The first unit circuit section 16Uα includes a first lower electrode 17Aα, and the second unit circuit section 16Uβ includes a second lower electrode 17Aβ. The first lower electrode 17Aα and the second lower electrode 17Aβ are arranged side by side with a gap along a first direction. The area of ​​the first lower electrode 17Aα included in the first unit circuit section 16Uα is smaller than the first gate body section 26Aα of the first gate wiring 26α. Similarly, the area of ​​the second lower electrode 17Aβ included in the second unit circuit section 16Uβ is smaller than the second gate body section 26Aβ of the second gate wiring 26β. Therefore, when the first gate body portion 26Aα or the second gate body portion 26Aβ made of the first metal film becomes charged, although electrostatic discharge may occur between the first body-side connection portion 26Cα and the first cross position CP1, or between the second body-side connection portion 26Cβ and the second cross position CP2, by ensuring the straight-line distance between the first body-side connection portion 26Cα and the first cross position CP1, and the straight-line distance between the second body-side connection portion 26Cβ and the second cross position CP2, the aforementioned electrostatic discharge can be made difficult to occur.

[0087] Furthermore, the liquid crystal panel (display device) 11 according to this embodiment includes the array substrate 21 described above and a counter substrate 20 spaced apart from and disposed opposite to the array substrate 21. The liquid crystal panel 11 with this structure can suppress the occurrence of short circuits in the array substrate 21, thus making it difficult for display defects caused by short circuits to occur.

[0088] <Embodiment 2> Embodiment 2 will be described with reference to FIG7. This embodiment shows a modification of the gate wiring 126 structure. Furthermore, the same structure, function, and effects as in Embodiment 1 described above will not be repeated.

[0089] As shown in Figure 7, the first gate wiring 126α, the second gate wiring 126β, the third gate wiring 126γ, the fourth gate wiring 126δ, and the fifth gate wiring 126ε involved in this embodiment are configured such that the first distance D101 and the third distance D103 are equal. Specifically, the main body-side connection portions 126C and the lead-out-side connection portions 126D of all gate wirings 126 are configured such that their arrangement along the Y-axis direction is approximately consistent with the central position along the Y-axis direction in the lower electrode 117A. Therefore, the main body-side connection portions 126C and the lead-out-side connection portions 126D are arranged at equal intervals along the Y-axis direction. That is, the distance between two adjacent main body-side connection portions 126C and lead-out-side connection portions 126D along the Y-axis direction, namely the first distance D103 and the third distance D103, are equal. In this way, the first gate body portion 126Aα, the second gate body portion 126Aβ, the third gate body portion 126Aγ, the fourth gate body portion 126Aδ, and the fifth gate body portion 126Aε can be arranged at equal intervals.

[0090] On the other hand, as shown in FIG7, the first gate wiring 126α, the second gate wiring 126β, the third gate wiring 126γ, the fourth gate wiring 126δ, and the fifth gate wiring 126ε are configured such that the second distance D102 and the fourth distance D104 are different. Specifically, two adjacent gate wirings 126 along the Y-axis direction are configured such that the intersection position CP of the gate lead-out portion 126B and the lower electrode 117A is offset along the Y-axis direction relative to the aforementioned main body side connection portion 126C and lead-out side connection portion 126D (the central position of the lower electrode 117A along the Y-axis direction) to one side (the upper side of FIG7) and the other side (the lower side of FIG7). The gate lead-out portion 126B is configured to be connected to any one of the two corner portions of the upper electrode 117B located along the X-axis direction on the side of the main body side connection portion 126C and the lead-out side connection portion 126D (the right side of FIG7). More specifically, the first gate wiring 126α is configured such that the first cross position CP101 is biased at the end of the first upper electrode 117Bα along the Y-axis direction near the side of the second upper electrode 117Bβ. The first gate lead-out 126Bα is configured such that its side edge along the other side (lower side of FIG. 7) along the Y-axis is aligned with the end of the first upper electrode 117Bα along the other side along the Y-axis direction. The second gate wiring 126β is configured such that the second cross position CP102 is biased at the end of the second upper electrode 117Bβ along the Y-axis direction near the side of the first upper electrode 117Bα. The second gate lead-out 126Bβ is configured such that its side edge along the Y-axis direction (upper side of FIG. 7) is aligned with the end of the second upper electrode 117Bβ along the Y-axis direction.

[0091] As shown in Figure 7, the third gate wiring 126γ is configured such that the third cross position CP103 is short and biased opposite to the side of the second upper electrode 117Bβ along the Y-axis direction in the third upper electrode 117Bγ. The third gate lead-out 126Bγ is configured such that its side edge along the Y-axis direction is aligned with the end of the third upper electrode 117Bγ along the Y-axis direction. The fourth gate wiring 126δ is configured such that the fourth cross position CP104 is biased at the end of the fourth upper electrode 117Bδ along the Y-axis direction near the side of the third upper electrode 117Bγ. The fourth gate lead-out 126Bδ is configured such that its side edge along the Y-axis direction is aligned with the end of the fourth upper electrode 117Bδ along the Y-axis direction. The fifth gate wiring 126ε is configured such that the fifth cross position CP105 is biased at the opposite end of the fifth upper electrode 117Bε along the Y-axis direction near the side of the fourth upper electrode 117Bδ. The fifth gate lead-out portion 126Bε is configured such that the side edge on the other side along the Y-axis direction is aligned with the end of the fifth upper electrode 117Bε on the other side along the Y-axis direction.

[0092] In this embodiment, as shown in FIG7, the fourth distance D104 is greater than the second distance D102. Furthermore, the fourth distance D104 is greater than the first distance D101 and the third distance D103. Furthermore, the second distance D102 is less than the first distance D101 and the third distance D103. The first distance D101 and the third distance D103 are equidistant from the arrangement of the pixel electrodes 25 in the display area AA along the Y-axis direction (refer to FIG3).

[0093] This maximizes the linear distance between the first main body side connection 126Cα and the first intersection position CP101, which is offset at the end of the first upper electrode 117Bα along the Y-axis towards the side of the second upper electrode 117Bβ. It also maximizes the linear distance between the second main body side connection 126Cβ and the second intersection position CP102, which is offset at the end of the second upper electrode 117Bβ along the Y-axis towards the side of the first upper electrode 117Bα. Finally, it maximizes the linear distance between the third main body side connection 126Cγ and the third intersection position CP103, which is short and offset at the opposite side of the third upper electrode 117Bγ along the Y-axis towards the side of the second upper electrode 117Bβ. The linear distance between the fourth main body side connection 126Cδ and the fourth cross position CP104 can be maximized. The fourth cross position CP104 is biased at the end of the fourth upper electrode 117Bδ that is closer to the third upper electrode 117Bγ along the Y-axis. The linear distance between the fifth main body side connection 126Cε and the fifth cross position CP105 can be maximized. The fifth cross position CP105 is biased at the end of the fifth upper electrode 117Bε that is closer to the opposite side of the fourth upper electrode 117Bδ along the Y-axis. As described above, by maximizing the linear distance between the main body side connection 126C and the cross position CP, electrostatic discharge is less likely to occur between the main body side connection 126C and the cross position CP.

[0094] In summary, in this embodiment, the first gate wiring 126Aα, the second gate wiring 126Bβ, and the third gate wiring 126Aγ are configured such that the second distance D102 and the fourth distance D104 are different, but the first distance D101 and the third distance D103 are equal. This allows the first gate body portion 126Aα, the second gate body portion 126Aβ, and the third gate body portion 126Aγ to be arranged at equal intervals.

[0095] Furthermore, it also includes: a first upper electrode 117Bα formed of a portion of the second metal film and connected to the first gate lead-out portion 126Bα; a second upper electrode 117Bβ formed of a portion of the second metal film and connected to the second gate lead-out portion 126Bβ, and spaced apart from the first upper electrode 117Bα in a first direction; and a third gate lead-out portion 126Bγ formed of a portion of the second metal film and spaced apart from the second upper electrode 117Bβ in a first direction away from the first upper electrode 117Bα. The third upper electrode 117Bγ is configured such that the first gate wiring 126α is configured as a first cross position CP101 and biased towards the second upper electrode 117Bβ along a first direction in the first upper electrode 117Bα; the second gate wiring 126β is configured as a second cross position CP2 and biased towards the first upper electrode 117Bα along a first direction in the second upper electrode 117Bβ; and the third gate wiring 126γ is configured as a third cross position CP103 and biased away from the second upper electrode 117Bβ along a first direction in the third upper electrode 117Bγ. This configuration maximizes the straight-line distance between the first main body side connection portion 126Cα and the first cross position CP101, where the first cross position CP101 is biased towards the second upper electrode 117Bβ along a first direction in the first upper electrode 117Bα. The linear distance between the second main body side connection portion 126Cβ and the second intersection position CP102 can be maximized. The second intersection position CP102 is biased towards the first upper electrode 117Bα in the second upper electrode 117Bβ along the first direction. The linear distance between the third main body side connection portion 126Cγ and the third intersection position CP103 can be maximized. The third intersection position CP103 is biased away from the second upper electrode 117Bβ in the third upper electrode 117Bγ along the first direction.

[0096] <Embodiment 3> Embodiment 3 will be described with reference to FIG8. This embodiment shows a modification of the gate wiring 226 structure in Embodiments 1 and 2 described above. Furthermore, structures, functions, and effects identical to those in Embodiments 1 and 2 described above will not be repeated.

[0097] As shown in Figure 8, the first gate wiring 226α, the second gate wiring 226β, the third gate wiring 226γ, the fourth gate wiring 226δ, and the fifth gate wiring 226ε involved in this embodiment are the same as in Embodiment 1, with the first distance D201 and the third distance D203 being different, and the second distance D202 and the fourth distance D204 being different, just like in Embodiment 2. Specifically, as in Embodiment 1, two adjacent gate wirings 226 along the Y-axis direction are configured such that the main body side connection portion 226C and the lead-out side connection portion 226D are offset along the Y-axis direction relative to the central position of the lower electrode 217A along the Y-axis direction to one side (upper side of Figure 8) and the other side (lower side of Figure 8). In addition, similar to Embodiment 2, the two adjacent gate wirings 226 along the Y-axis are configured such that the intersection position CP of the gate lead-out portion 226B and the lower electrode 217A is offset along the Y-axis relative to the central position of the lower electrode 217A along the Y-axis to one side (upper side of FIG8) and the other side (lower side of FIG8). The specific configuration of each gate wiring 226α to 226ε is as described in Embodiments 1 and 2.

[0098] In this embodiment, as shown in FIG8, the first distance D201 is equal to the first distance D1 in Embodiment 1, and the third distance D203 is equal to the third distance D3 in Embodiment 1 (refer to FIG5). Similarly, the second distance D202 in this embodiment is equal to the second distance D102 in Embodiment 2, and the fourth distance D204 is equal to the fourth distance D104 in Embodiment 2 (refer to FIG7). The difference between the first distance D201 and the third distance D203 is greater than the difference between the first distance D1 and the third distance D3 in Embodiment 1, and is also greater than the difference between the first distance D101 and the third distance D103 in Embodiment 2. Similarly, the difference between the second distance D202 and the fourth distance D204 is greater than the difference between the second distance D2 and the fourth distance D4 in Embodiment 1, and is also greater than the difference between the second distance D102 and the fourth distance D104 in Embodiment 2.

[0099] This maximizes the linear distance between the first main body side connecting portion 226Cα and the first cross position CP201. The first main body side connecting portion 226Cα is biased along the Y-axis direction of the first upper electrode 217Bα towards the opposite end of the second upper electrode 217Bβ. The first cross position CP201 ​​is biased along the Y-axis direction of the first upper electrode 217Bα towards the end of the second upper electrode 217Bβ. Similarly, this maximizes the linear distance between the second main body side connecting portion 226Cβ and the second cross position CP202. The second main body side connecting portion 226Cβ is biased along the Y-axis direction of the second upper electrode 217Bβ towards the end of the third upper electrode 217Bγ. The second cross position CP202 is biased along the Y-axis direction of the second upper electrode 217Bβ towards the end of the first upper electrode 217Bα. The linear distance between the third main body side connection 226Cγ and the third intersection position CP203 can be maximized. The third main body side connection 226Cγ is offset at the end of the third upper electrode 217Bγ along the Y-axis direction, closer to the side of the second upper electrode 217Bβ. The third intersection position CP203 is offset at the end of the third upper electrode 217Bγ along the Y-axis direction, closer to the opposite side of the second upper electrode 217Bβ. The linear distance between the fourth main body side connection 226Cδ and the fourth intersection position CP204 can be maximized. The fourth main body side connection 226Cδ is offset at the end of the fourth upper electrode 217Bδ along the Y-axis direction, closer to the side of the fifth upper electrode 217Bε. The fourth intersection position CP204 is offset at the end of the fourth upper electrode 217Bδ along the Y-axis direction, closer to the side of the third upper electrode 217Bγ. The linear distance between the fifth main body side connection 226Cε and the fifth cross position CP205 can be maximized. The fifth main body side connection 226Cε is biased at the end of the fifth upper electrode 217Bε that is closer to the fourth upper electrode 217Bδ along the Y-axis direction, and at the end of the fifth upper electrode 217Bε that is closer to the opposite side of the fourth upper electrode 217Bδ along the Y-axis direction. As described above, by maximizing the linear distance between the main body side connection 226Cε and the cross position CP, electrostatic discharge is less likely to occur between the main body side connection 226Cε and the cross position CP.

[0100] In summary, in this embodiment, the first gate wiring 226α, the second gate wiring 226β, and the third gate wiring 226γ are configured such that the first distance D201 and the third distance D203 are different, and the second distance D202 and the fourth distance D204 are different. This maximizes the linear distances between the first main body side connection portion 226Cα and the first intersection position CP201, the second main body side connection portion 226Cβ and the second intersection position CP202, and the third main body side connection portion 226Cγ and the third intersection position CP203, respectively.

[0101] In addition, it also includes: a first upper electrode 217Bα formed by a portion of the second metal film and connected to the first gate lead-out portion 226Bα; a second upper electrode 217Bβ formed by a portion of the second metal film and connected to the second gate lead-out portion 226Bβ, and spaced apart from the first upper electrode 217Bα in the first direction; and a third upper electrode 217Bγ formed by a portion of the second metal film and connected to the third gate lead-out portion 226Bγ, and spaced apart from the second upper electrode 217Bβ in the first direction away from the first upper electrode 217Bα. The first gate wiring 226α is configured such that the first body-side connection portion 226Cα and the first lead-out-side connection portion 226Dα are biased away from the second upper electrode 217Bβ in the first upper electrode 217Bα along the first direction, and the first cross position CP20. 1 is configured such that the first upper electrode 217Bα is biased close to the second upper electrode 217Bβ along a first direction, the second gate wiring 226β is configured such that the second body-side connection portion 226Cβ and the second lead-side connection portion 226Dβ are biased away from the first upper electrode 217Bα along a first direction in the second upper electrode 217Bβ, and the second cross position CP202 is configured such that the second upper electrode 217Bβ is biased close to the first upper electrode 217B in the first direction in the second upper electrode 217Bβ, and the third gate wiring 226γ is configured such that the third body-side connection portion 226Cγ and the third lead-side connection portion 226Dγ are biased close to the second upper electrode 217Bβ along a first direction in the third upper electrode 217Bγ, and the third cross position CP203 is configured such that the third upper electrode 217Bγ is biased away from the second upper electrode 217Bβ along a first direction in the third upper electrode 217Bγ. The linear distance between the first main body side connecting portion 226Cα and the first intersection position CP201 ​​can be maximized. The first main body side connecting portion 226Cα is offset away from the second upper layer electrode 217Bβ in the first upper layer electrode 217Bα along the first direction, and the first intersection position CP201 ​​is offset closer to the second upper layer electrode 217Bβ in the first upper layer electrode 217Bα along the first direction. The linear distance between the second main body side connecting portion 226Cβ and the second intersection position CP202 can be maximized. The second main body side connecting portion 226Cβ is offset away from the first upper layer electrode 217Bα in the second upper layer electrode 217Bβ along the first direction, and the second intersection position CP202 is offset closer to the first upper layer electrode 217Bα in the second upper layer electrode 217Bβ along the first direction. The straight-line distance between the third main body side connection 226Cγ and the third cross position CP203 can be maximized. The third main body side connection 226Cγ is biased in the third upper electrode 217Bγ along the first direction, closer to the second upper electrode 217Bβ. The third cross position CP203 is biased in the third upper electrode 217Bγ along the first direction, further away from the second upper electrode 217Bβ.

[0102] <Embodiment 4> Embodiment 4 will be described with reference to FIG. 9. This embodiment shows a modification of the gate wiring 326 structure in Embodiment 3 described above. Furthermore, the same structures, functions, and effects as in Embodiment 1 described above will not be repeated.

[0103] As shown in FIG9, in the lower electrode 317A according to this embodiment, a portion closer to the main body side connection portion 326C than the cross position CP has a protrusion 33 that partially protrudes towards the main body side connection portion 326C (right side of FIG9) along the X-axis direction. The protrusion 33 is formed by a part of the first metal film and is directly connected to the lower electrode 317A. The protrusion 33 is positioned in a position that does not overlap with the upper electrode 317B. The protrusion 33 is configured to connect to either of the two corner portions of the lower electrode 317A located along the X-axis direction on the side of the main body side connection portion 326C and the lead-out side connection portion 326D. Here, the gate lead-out portion 326B is configured to connect to either of the two corner portions of the upper electrode 317B located along the X-axis direction on the side of the main body side connection portion 326C and the lead-out side connection portion 326D. In contrast, the protrusion 33 is connected to the corner portion of the lower electrode 317A that is away from the gate lead-out portion 326B along the Y-axis direction. Furthermore, the protrusion 33 is arranged side by side with a gap between it and the main body side connecting portion 326C and the lead-out side connecting portion 326D along the X-axis direction.

[0104] Hereinafter, when distinguishing multiple protrusions 33, the protrusion 33 provided on the first lower electrode 317Aα will be referred to as the "first protrusion" and marked with the subscript "α" after its reference numerals; the protrusion 33 provided on the second lower electrode 317Aβ will be referred to as the "second intersection position" and marked with the subscript "β" after its reference numerals; the protrusion 33 provided on the third lower electrode 317Aγ will be referred to as the "third intersection position" and marked with the subscript "γ" after its reference numerals; the protrusion 33 provided on the fourth lower electrode 317Aδ will be referred to as the "fourth intersection position" and marked with the subscript "δ" after its reference numerals; the protrusion 33 provided on the fifth lower electrode 317Aε will be referred to as the "fifth intersection position" and marked with the subscript "ε" after its reference numerals; when not distinguishing and referring to them collectively, no subscript will be marked after the reference numerals.

[0105] As shown in Figure 9, the first protrusion 33α is located in the first lower electrode 317Aα, closer to the corner of the first main body side connection portion 326Cα than the first intersection position CP301, and partially protrudes towards the first main body side connection portion 326Cα along the X-axis. The second protrusion 33β is located in the second lower electrode 317Aβ, closer to the corner of the second main body side connection portion 326Cβ than the second intersection position CP302, and partially protrudes towards the second main body side connection portion 326Cβ along the X-axis. The third protrusion 33γ is located in the third lower electrode 317Aγ, closer to the corner of the third main body side connection portion 326Cγ than the third intersection position CP303, and partially protrudes towards the third main body side connection portion 326Cγ along the X-axis. The fourth protrusion 33δ is located in the fourth lower electrode 317Aδ, closer to the corner of the fourth main body side connection portion 326Cδ than the fourth intersection position CP304, and partially protrudes towards the fourth main body side connection portion 326Cδ along the X-axis. The fifth protrusion 33ε is located in the fifth lower electrode 317Aε at the corner of the fifth main body side connection 326Cε, which is closer to the fifth main body side connection 326Cε than the fifth cross position CP305, and protrudes locally towards the fifth main body side connection 326Cε in the X-axis direction.

[0106] Thus, the first protrusion 33α on the first lower electrode 317Aα is positioned closer to the first main body side connection portion 326Cα than the first cross position CP301. Therefore, when the first gate main body portion 326Aα, made of the first metal film, becomes charged, electrostatic discharge can preferentially occur between the first main body side connection portion 326Cα and the first protrusion 33α. This makes electrostatic damage at the first cross position CP301 less likely to occur. Similarly, the second protrusion 33β on the second lower electrode 317Aβ is positioned closer to the second main body side connection portion 326Cβ than the second cross position CP302. Therefore, when the second gate main body portion 326Aβ, made of the first metal film, becomes charged, electrostatic discharge can preferentially occur between the second main body side connection portion 326Cβ and the second protrusion 33β. This makes electrostatic damage at the second cross position CP302 less likely to occur. The third protrusion 33γ, provided on the third lower electrode 317Aγ, is positioned closer to the third main body side connection portion 326Cγ than the third cross position CP303. Therefore, when the third gate main body portion 326Aγ, made of the first metal film, becomes charged, electrostatic discharge preferentially occurs between the third main body side connection portion 326Cγ and the third protrusion 33γ. This makes electrostatic damage at the third cross position CP303 less likely to occur. The fourth protrusion 33δ, provided on the fourth lower electrode 317Aδ, is positioned closer to the fourth main body side connection portion 326Cδ than the fourth cross position CP304. Therefore, when the fourth gate main body portion 326Aδ, made of the first metal film, becomes charged, electrostatic discharge preferentially occurs between the fourth main body side connection portion 326Cδ and the fourth protrusion 33δ. This makes electrostatic damage at the fourth cross position CP304 less likely to occur. The fifth protrusion 33ε, provided on the fifth lower electrode 317Aε, is positioned closer to the fifth main body side connection portion 326Cε than the fifth cross position CP305. Therefore, when the fifth gate main body portion 326Aε, made of the first metal film, becomes charged, electrostatic discharge can preferentially occur between the fifth main body side connection portion 326Cε and the fifth protrusion 33ε. This makes electrostatic damage at the fifth cross position CP305 less likely. As described above, since electrostatic damage is less likely to occur at the cross position CP, a short circuit between the gate lead 326B and the lower electrode 317A is less likely to occur. It should be noted that even if electrostatic discharge occurs between the main body side connection portion 326C and the protrusion 33, since the protrusion 33 and the upper electrode 317B are not overlapped, a short circuit between the lower electrode 317A and the upper electrode 317B can be avoided.

[0107] In summary, in this embodiment, the first lower electrode 317Aα has a first protrusion 33α that partially protrudes towards the first main body side connection portion 326Cα along a second direction intersecting the first direction. The distance from the first protrusion 33α to the first main body side connection portion 326Cα is shorter than the distance from the first intersection position CP301 to the first main body side connection portion 326Cα. The second lower electrode 317Aβ has a second protrusion 33β that partially protrudes towards the second main body side connection portion 326Cβ along the second direction. The distance from the second protrusion 33β to the second main body side connection portion 326Cβ is shorter than the distance from the second intersection position CP302 to the second main body side connection portion 326Cβ. The first protrusion 33α on the first lower electrode 317Aα is configured to be closer to the first main body side connection portion 326Cα than the first intersection position CP301. Therefore, when the first gate body portion 326Aα, made of the first metal film, becomes charged, electrostatic discharge can preferentially occur between the first body-side connection portion 326Cα and the first protrusion 33α. This makes electrostatic damage at the first cross position CP301 less likely to occur. The second protrusion 33β, provided on the second lower electrode 317Aβ, is configured to be closer to the second body-side connection portion 326Cβ than the second cross position CP302. Therefore, when the second gate body portion 326Aβ, made of the first metal film, becomes charged, electrostatic discharge can preferentially occur between the second body-side connection portion 326Cβ and the second protrusion 33β. This makes electrostatic damage at the second cross position CP302 less likely to occur.

[0108] <Embodiment 5> Embodiment 5 will be described with reference to FIG10. This embodiment shows a modification of the gate wiring 426 structure in Embodiment 1 described above. Furthermore, structures, functions, and effects identical to those in Embodiment 1 will not be repeated.

[0109] As shown in FIG10, the gate body portion 426A according to this embodiment has a curved portion 34 connected to the body-side connection portion 426C and having a curved planar shape, and an extension portion 35 connected to the curved portion 34. The planar shape of the curved portion 34 is approximately L-shaped, and it is configured to extend from the body-side connection portion 426C along the X-axis direction to the side opposite to the lower layer electrode 417A (right side of FIG10) and then bend, and then extend along the Y-axis direction. The bending direction of the curved portion 34 in the gate body portion 426A is opposite to the bending direction of the extension portion 426B2 in the gate lead-out portion 426B relative to the cross portion 426B1. The extension portion 35 is configured to extend from the end of the curved portion 34 opposite to the side opposite to the body-side connection portion 426C along the X-axis direction to the side opposite to the body-side connection portion 426C. The extension portion 35 extending along the X-axis direction is located on the same straight line as the cross portion 426B1 extending along the X-axis direction. That is, the dimension of the bending portion 34 extending along the Y-axis is adjusted so that the extension portion 35 and the intersection portion 426B1 are aligned on the same straight line.

[0110] Hereinafter, when distinguishing between the multiple curved portions 34 and extension portions 35, the curved portion 34 and extension portion 35 included in the first gate body portion 426Aα will be referred to as the "first curved portion" and the "first extension portion", and will be marked with the subscript "α" after their reference numerals; the curved portion 34 and extension portion 35 included in the second gate body portion 426Aβ will be referred to as the "second curved portion" and the "second extension portion", and will be marked with the subscript "β" after their reference numerals; the curved portion 34 and extension portion 35 included in the third gate body portion 426Aγ will be referred to as... The "third curved portion" and the "third extension portion" are marked with the subscript "γ" after their reference numerals; the curved portion 34 and the extension portion 35 included in the fourth gate body portion 426Aδ are called the "fourth curved portion" and the "fourth extension portion" and are marked with the subscript "δ" after their reference numerals; the curved portion 34 and the extension portion 35 included in the fifth gate body portion 426Aε are called the "fifth curved portion" and the "fifth extension portion" and are marked with the subscript "ε" after their reference numerals; when they are referred to collectively without distinction, no subscript is marked after the reference numerals.

[0111] As shown in Figure 10, the first bent portion 34α, constituting the first gate body portion 426Aα, extends from the first body side connection portion 426Cα along the X-axis direction to the opposite side of the first lower electrode 417Aα, then bends, and then extends along the Y-axis direction towards the lower side of Figure 10. The bending direction of the first bent portion 34α is opposite to the bending direction of the extension portion 426B2 in the first gate lead-out portion 426Bα relative to the intersection portion 426B1 (upper side of Figure 10). The first extension portion 35α extends from the end of the first bent portion 34α along the X-axis direction to the opposite side of the first body side connection portion 426Cα. The second bent portion 34β, constituting the second gate body portion 426Aβ, extends from the second body side connection portion 426Cβ along the X-axis direction to the opposite side of the second lower electrode 417Aβ, then bends, and then extends along the Y-axis direction towards the upper side of Figure 10. The bending direction of the second bent portion 34β is opposite to the bending direction of the extension 426B2 in the second gate lead-out portion 426Bβ relative to the cross portion 426B1 (lower side of FIG10). The second extension 35β extends from the end of the second bent portion 34β along the X-axis direction to the opposite side of the second body side connection portion 426Cβ.

[0112] As shown in Figure 10, the third curved portion 34γ, constituting the third gate main body portion 426Aγ, extends from the third main body side connecting portion 426Cγ along the X-axis direction to the opposite side of the third lower electrode 417Aγ side, then bends, and then extends along the Y-axis direction to the lower side of Figure 10. The bending direction of the third curved portion 34γ is opposite to the bending direction of the extension portion 426B2 in the third gate lead-out portion 426Bγ relative to the cross portion 426B1 (upper side of Figure 10). The fourth curved portion 34δ, constituting the fourth gate main body portion 426Aδ, extends from the fourth main body side connecting portion 426Cδ along the X-axis direction to the opposite side of the fourth lower electrode 417Aδ side, then bends, and then extends along the Y-axis direction to the upper side of Figure 10. The bending direction of the fourth curved portion 34δ is opposite to the bending direction of the extension portion 426B2 in the fourth gate lead-out portion 426Bδ relative to the cross portion 426B1 (lower side of Figure 10). The fifth bent portion 34ε, which constitutes the fifth gate body portion 426Aε, extends from the fifth body side connection portion 426Cε along the X-axis direction to the opposite side of the fifth lower electrode 417Aε, then bends, and then extends along the Y-axis direction to the lower side of FIG10. The bending direction of the fifth bent portion 34ε is opposite to the bending direction of the extension portion 426B2 in the fifth gate lead-out portion 426Bε relative to the cross portion 426B1 (upper side of FIG10).

[0113] As shown in Figure 10, the first gate body portions 426Aα and 426Aβ of the first gate wiring 426α and the second gate wiring 426β are positioned between the first extension portion 35α and the second extension portion 35β, spaced apart by a fifth distance D5 along the Y-axis. The second gate body portions 426Aβ and 426Aγ of the second gate wiring 426β and the third gate wiring 426γ are positioned between the second extension portion 35β and the third extension portion 35γ, spaced apart by a sixth distance D6 along the Y-axis. This sixth distance D6 is equal to the fifth distance D5. That is, the arrangement of the first gate body portions 426Aα, the second gate body portions 426Aβ, and the third gate body portions 426Aγ ensures that the first extension portion 35α, the second extension portion 35β, and the third extension portion 35γ are arranged at equal intervals along the Y-axis. The fifth distance D5 and the sixth distance D6 are equal to the intervals between the pixel electrodes 25 in the display area AA arranged along the Y-axis (refer to Figure 3).

[0114] It should be noted that, as shown in Figure 10, the third gate body portions 426Aγ and 426Aδ of the third gate wiring 426γ and the fourth gate wiring 426δ are disposed at a position separated by a fifth distance D5 along the Y-axis between the third extension portion 35γ and the fourth extension portion 35δ. That is, the positional relationship between the third gate wiring 426γ and the fourth gate wiring 426δ is the same as the positional relationship between the first gate wiring 426α and the second gate wiring 426β. Furthermore, the fourth gate body portions 426Aδ and 426Aε of the fourth gate wiring 426δ and the fifth gate wiring 426ε are disposed at a position separated by a sixth distance D6 along the Y-axis between the fourth extension portion 35δ and the fifth extension portion 35ε. That is, the positional relationship between the fourth gate wiring 426δ and the fifth gate wiring 426ε is the same as the positional relationship between the second gate wiring 426β and the third gate wiring 426γ.

[0115] Even though the first main body side connecting portion 426Cα, the second main body side connecting portion 426Cβ, the third main body side connecting portion 426Cγ, the fourth main body side connecting portion 426Cδ, and the fifth main body side connecting portion 426Cε are biased along the Y-axis direction towards the ends of the first upper electrode 417Bα, the second upper electrode 417Bβ, the third upper electrode 417Bγ, the fourth upper electrode 417Bδ, and the fifth upper electrode 417Bε, respectively, according to this embodiment, through the action of the first bending portion 34α, the second bending portion 34β, the third bending portion 34γ, the fourth bending portion 34δ, and the fifth bending portion 34ε, the fifth distance D5 between the first extension portion 35α and the second extension portion 35β, the sixth distance D6 between the second extension portion 35β and the third extension portion 35γ, the fifth distance D5 between the third extension portion 35γ and the fourth extension portion 35δ, and the sixth distance D6 between the fourth extension portion 35δ and the fifth extension portion 35ε are all equal. Thus, the first extension 35α, the second extension 35β, the third extension 35γ, the fourth extension 35δ, and the fifth extension 35ε can be arranged at equal intervals.

[0116] In summary, in this embodiment, the first gate body portion 426Aα has a first bent portion 34α and a first extension portion 35α. The first bent portion 34α extends from the first body-side connecting portion 426Cα along a second direction intersecting the first direction away from the first lower electrode 417Aα, and then bends along the first direction. The first extension portion 35α extends from the end of the first bent portion 34α along the second direction away from the first body-side connecting portion 426Cα. The second gate body portion 426Aβ has a second bent portion 34β and a second extension portion 35β. The second bent portion 34β extends from the second body-side connecting portion 426Cβ along the second direction away from the second lower electrode 417Aβ, and then bends along the first direction. The second extension portion 35β extends from the end of the second bent portion 34α along the second direction away from the first body-side connecting portion 426Aβ. The third gate body portion 426Aγ extends away from the second body side connection portion 426Cβ in two directions; the third gate body portion 426Aγ has a third bent portion 34γ and a third extension portion 35γ. The third bent portion 34γ extends away from the third body side connection portion 426Cγ in the second direction away from the third lower electrode 417Aγ and then bends in the first direction. The third extension portion 35γ extends away from the end of the third bent portion 34γ in the second direction away from the third body side connection portion 426Cγ. The first gate body portion 426Aα, the second gate body portion 426Aβ and the third gate body portion 426Aγ are configured such that the fifth distance D5 between the first extension portion 35α and the second extension portion 35β in the first direction is equal to the sixth distance D6 between the second extension portion 35β and the third extension portion 35γ in the first direction. Even though the first main body side connecting portion 426Cα, the second main body side connecting portion 426Cβ, and the third main body side connecting portion 426Cγ are respectively offset near the first upper electrode 417Bα, the second upper electrode 417Bβ, and the third upper electrode 417Bγ along the first direction, the fifth distance D5 between the first extension portion 35α and the second extension portion 35β along the first direction and the sixth distance D6 between the second extension portion 35β and the third extension portion 35γ along the first direction are still equal due to the action of the first bending portion 34α, the second bending portion 34β, and the third bending portion 34γ. Therefore, the first extension portion 35α, the second extension portion 35β, and the third extension portion 35γ can be arranged at equal intervals.

[0117] <Embodiment 6> Embodiment 6 will be described with reference to Figures 11 to 13. This embodiment shows the case where a common trunk cabling (fourth cabling) 36 is added to Embodiment 3 described above. Furthermore, the same structure, function, and effects as in Embodiment 3 will not be repeated.

[0118] As shown in FIG11, in the non-display area NAA of the liquid crystal panel 511 according to this embodiment, a common trunk line wiring 36 connected to the common electrode 28 (refer to FIG4) and the flexible substrate 513 is disposed. The common trunk line wiring 36 is composed of a frame-shaped portion 36A that surrounds the display area NAA throughout, and an extension portion 36B that extends from the frame-shaped portion 36A to the flexible substrate 513. The frame-shaped portion 36A is connected to the common electrode 28 via a common branch line wiring (not shown). The common trunk line wiring 36 supplies a common potential signal via the flexible substrate 513 through an external circuit board.

[0119] As shown in Figure 12, the portion of the frame-shaped portion 36A constituting the common trunk wiring 36 extending along the Y-axis is positioned at a distance from the shift register circuit 516 along the X-axis on the display area AA side (right side of Figure 12). The portion of the frame-shaped portion 36A extending along the Y-axis is positioned at a distance from the main body-side connection portion 526C and the lead-out-side connection portion 526D along the X-axis on the opposite side of the display area AA side (left side of Figure 12). Thus, the portion of the frame-shaped portion 36A extending along the Y-axis is sandwiched between the shift register circuit 516 and the plurality of main body-side connection portions 526C in the X-axis direction.

[0120] As shown in Figure 13, the common trunk wiring 36 is formed by a portion of the first metal film. Furthermore, as shown in Figures 12 and 13, the portion of the frame-shaped portion 36A constituting the common trunk wiring 36 extending along the Y-axis intersects with a plurality of gate leads 526B arranged along the Y-axis. The portions of the common trunk wiring 36 that intersect with the plurality of gate leads 526B respectively constitute conductive portions 37. A gate insulating film 529 is sandwiched between the plurality of conductive portions 37 and the plurality of gate leads 526B to maintain insulation between them.

[0121] Hereinafter, when distinguishing multiple conductive portions 37, the conductive portion 37 formed by the portion of the common trunk wiring 36 that intersects with the first gate lead 526Bα is referred to as the "first conductive portion," and is marked with the subscript "α" after its reference numerals; the conductive portion 37 formed by the portion of the common trunk wiring 36 that intersects with the second gate lead 526Bβ is referred to as the "second conductive portion," and is marked with the subscript "β" after its reference numerals; the conductive portion 37 formed by the portion of the common trunk wiring 36 that intersects with the third gate lead 526Bγ is referred to as the "second conductive portion," and is marked with the subscript "β" after its reference numerals; the conductive portion 37 formed by the portion of the common trunk wiring 36 that intersects with the third gate lead 526Bγ is referred to as the "second conductive portion." Part 37 is referred to as the "third conductive part" and is marked with the subscript "γ" after its reference numerals; the conductive part 37 formed by the portion of the common trunk wiring 36 that intersects with the fourth gate lead 526Bδ is referred to as the "fourth conductive part" and is marked with the subscript "δ" after its reference numerals; the conductive part 37 formed by the portion of the common trunk wiring 36 that intersects with the fifth gate lead 526Bε is referred to as the "fifth conductive part" and is marked with the subscript "ε" after its reference numerals; when referred to collectively without distinction, no subscript is marked after the reference numerals.

[0122] In this embodiment, the common trunk wiring 36 is configured in the X-axis direction to be closer to the main body-side connection portion 526C than the shift register circuit 516. Therefore, when the gate main body portion 526A made of the first metal film becomes charged, there is a concern that electrostatic discharge may occur between the main body-side connection portion 526C and the cross position CP. To address this, similar to embodiments 1 and 3, the plurality of gate wirings 526 are configured such that the bending directions of the gate leads 526B are alternately set to be different from each other, so that the distance between two adjacent main body-side connection portions 526C in the Y-axis direction is different from the distance between two adjacent cross positions CP in the Y-axis direction. Therefore, the straight-line distances between the first main body side connecting portion 526Cα and the first intersection position CP501, the straight-line distances between the second main body side connecting portion 526Cβ and the second intersection position CP502, the straight-line distances between the third main body side connecting portion 526Cγ and the third intersection position CP503, the straight-line distances between the fourth main body side connecting portion 526Cδ and the fourth intersection position CP504, and the straight-line distances between the fifth main body side connecting portion 526Cε and the fifth intersection position CP505 can be fully ensured, thereby making it difficult for the above-mentioned electrostatic discharge to occur.

[0123] In summary, this embodiment includes a shift register circuit 516 and a common trunk wiring (fourth wiring) 36. The shift register circuit 516 has a first unit circuit section 516Uα connected to the first gate lead-out section 526Bα and a second unit circuit section 516Uβ connected to the second gate lead-out section 526Bβ. The common trunk wiring 36 extends along the first direction in a second direction intersecting the first direction, between the shift register circuit 516 and the first main body side connection section 526Cα and the second main body side connection section 526Cβ. The common trunk wiring 36 is composed of a portion of the first metal film. The first conductive section 37α is composed of the portion of the common trunk wiring 36 that intersects with the first gate lead-out section 526Bα, and the second conductive section 37β is composed of the portion of the common trunk wiring 36 that intersects with the second gate lead-out section 526Bβ. The common trunk wiring 36, including the first conductive portion 37α and the second conductive portion 37β, is configured to be closer to the first main body side connection portion 526Cα and the second main body side connection portion 526Cβ in the second direction than the shift register circuit 516. Therefore, when the first gate main body portion 526AAα or the second gate main body portion 526AAβ made of the first metal film becomes charged, although electrostatic discharge may occur between the first main body side connection portion 526Cα and the first cross position CP501, or between the second main body side connection portion 526Cβ and the second cross position CP502, by sufficiently ensuring the straight-line distance between the first main body side connection portion 526Cα and the first cross position CP501, and the straight-line distance between the second main body side connection portion 526Cβ and the second cross position CP502, the occurrence of the above-mentioned electrostatic discharge can be made difficult.

[0124] <Embodiment 7> Embodiment 7 will be described with reference to FIG14. This embodiment shows a modification to the structure of the common trunk wiring 636 in Embodiment 6 described above. Furthermore, structures, functions, and effects identical to those in Embodiment 6 will not be repeated.

[0125] As shown in Figure 14, the common trunk wiring 636 according to this embodiment is provided with a widening portion 38. The widening portion 38 widens the common trunk wiring 636 by partially protruding towards the main body side connection portion 626C (right side of Figure 14) along the X-axis direction. The widening portion 38 is provided in the portion of the common trunk wiring 636 that is closer to the main body side connection portion 626C along the Y-axis direction than the crossing position CP. Specifically, the widening portion 38 is positioned at the position that is furthest from the crossing position CP and closest to the main body side connection portion 626C.

[0126] Specifically, as shown in Figure 14, the common trunk wiring 636 has multiple widening portions 38 spaced apart along the Y-axis. These widening portions 38 include at least: a widening portion 38 offset from the first main body side connection 626Cα along the Y-axis relative to the opposite side of the first intersection position CP601; a widening portion 38 located between the second main body side connection 626Cβ and the third main body side connection 626Cγ along the Y-axis; and a widening portion 38 located between the fourth main body side connection 626Cδ and the fifth main body side connection 626Cε along the Y-axis. In summary, the multiple widening portions 38 include: a widening portion 38 located between the 2nth main body side connection 626C and the (2n+1)th main body side connection 626C, counting from the top of Figure 14 (where n is a natural number).

[0127] Thus, when the gate body portion 626A made of the first metal film becomes charged, electrostatic discharge can preferentially occur between the body-side connection portion 626C and the widened portion 38, making electrostatic damage at the crossover position CP less likely to occur. If electrostatic damage is not likely to occur at the crossover position CP, a short circuit between the gate lead portion 626B and the lower electrode 617A is less likely to occur. It should be noted that even if electrostatic discharge occurs between the body-side connection portion 626C and the widened portion 38, since the widened portion 38 is a single-layer structure and is configured without overlapping with other wiring and electrodes, a short circuit in the common trunk wiring 636 can be avoided.

[0128] In summary, in this embodiment, the common trunk cabling 636 is provided with a widened portion 38 that partially protrudes towards the first main body side connection portion 626Cα and the second main body side connection portion 626Cβ along the second direction. The position of the widened portion 38 protruding towards the first main body side connection portion 626Cα is closer to the first main body side connection portion 626Cα than the first cross position CP601, and the position of the widened portion 38 protruding towards the second main body side connection portion 626Cβ is closer to the second main body side connection portion 626Cβ than the second cross position CP602. The widened portion 38 provided on the common trunk cabling 636 is configured to be closer to the first main body side connection portion 626Cα and the second main body side connection portion 626Cβ than the first cross position CP601 and the second cross position CP602. Therefore, when the first gate body portion 626Aα or the second gate body portion 626Aβ made of the first metal film becomes charged, electrostatic discharge can preferentially occur between the first body-side connection portion 626Cα or the second body-side connection portion 626Cβ and the widened portion 38. As a result, electrostatic damage can be prevented from occurring at the first cross position CP601 and the second cross position CP602.

[0129] <Embodiment 8> Embodiment 8 will be described with reference to FIG15. This embodiment shows a modification to the connection structure between the gate body portion 726A and the gate lead portion 726B in Embodiment 1 described above. Furthermore, the same structures, functions, and effects as in Embodiment 1 described above will not be repeated.

[0130] As shown in FIG. 15, the array substrate 721 according to this embodiment has a connection electrode 39 for connecting the gate body portion 726A and the gate lead-out portion 726B. In this embodiment, the body-side connection portion 726C of the gate body portion 726A and the lead-out-side connection portion 726D of the gate lead-out portion 726B are not directly connected, but are connected through the connection electrode 39. In this embodiment, the lead-out-side connection portion 726D overlaps entirely with the body-side connection portion 726C, but the body-side connection portion 726C includes a portion that does not overlap with the lead-out-side connection portion 726D. The connection electrode 39 is composed of a portion of a first transparent electrode film located on the upper side of the planarization film 731 that is different from the common electrode 28 (refer to FIG. 5). The connection electrode 39 is arranged overlapping both the body-side connection portion 726C and the lead-out-side connection portion 726D. A gate contact hole GCH700 is provided in the gate insulating film 729, the first interlayer insulating film 730, and the planarization film 731, which are located below the connection electrode 39. The gate contact hole GCH700 includes a first range A1 that overlaps with the lead-side connection portion 726D, and a second range A2 that overlaps with the body-side connection portion 726C but does not overlap with the lead-side connection portion 726D. The first range A1 of the gate contact hole GCH700 is provided in the first interlayer insulating film 730 and the planarization film 731. The connection electrode 39 is connected to the lead-side connection portion 726D through the first range A1 of the gate contact hole GCH700. The second range A2 of the gate contact hole GCH700 is provided in the gate insulating film 729, the first interlayer insulating film 730, and the planarization film 731. The connection electrode 39 is connected to the body-side connection portion 726C through the second range A2 of the gate contact hole GCH700.

[0131] <Embodiment 9> Embodiment 9 will be described with reference to FIG16. This embodiment shows a modification of the connection structure between the gate body portion 726A and the gate lead portion 726B in Embodiment 8 described above. Furthermore, the same structures, functions, and effects as in Embodiment 8 will not be repeated.

[0132] As shown in Figure 16, the connection electrode 839 in this embodiment is connected to the main body side connection portion 826C of the gate main body portion 826A and the lead-out side connection portion 826D of the gate lead-out portion 826B through two gate contact holes GCH801 and GCH802. A gate contact hole GCH801 is provided in the first interlayer insulating film 830 and planarization film 831 sandwiched between the connection electrode 839 and the lead-out side connection portion 826D. One gate contact hole GCH801 is overlapped with the connection electrode 839 and the lead-out side connection portion 826D. The connection electrode 839 and the lead-out side connection portion 826D are connected through one gate contact hole GCH801. Another gate contact hole GCH802 is provided in the gate insulating film 829, the first interlayer insulating film 830, and the planarization film 831 sandwiched between the connection electrode 839 and the main body side connection portion 826C. Another gate contact hole GCH802 is positioned spaced apart from a gate contact hole GCH801, overlapping with the connection electrode 839 and the body-side connection portion 826C, but not overlapping with the lead-out side connection portion 826D. The connection electrode 839 and the body-side connection portion 826C are connected through the other gate contact hole GCH802.

[0133] <Other Embodiments> The technology disclosed in this specification is not limited to the embodiments described above and illustrated in the drawings. For example, the following embodiments are also included within the scope of the technology.

[0134] (1) The planar shape of the gate leads 26B, 126B, 226B, 426B, 526B, 626B, 726B, and 826B is not limited to an L-shape. For example, the extensions 26B2 and 426B2 of the gate leads 26B, 126B, 226B, 426B, 526B, 626B, 726B, and 826B may extend in a direction inclined relative to the X-axis direction and the Y-axis direction. Furthermore, for example, gate leads 26B, 126B, 226B, 426B, 526B, 626B, 726B, and 826B can extend from their positions connected to the upper electrodes 17B, 117B, 217B, and 317B in a direction inclined relative to the X-axis and Y-axis directions to lead-side connection portions 26D, 126D, 226D, 326D, 526D, 726D, and 826D.

[0135] (2) The bending direction of each gate lead-out portion 26B, 126B, 226B, 426B, 526B, 626B, 726B, and 826B may also be opposite to the direction shown in each top view. Specifically, the extension portions 26B2 and 426B2 of the first gate lead-out portions 26Bα, 126Bα, 226Bα, 426Bα, and 526Bα can be bent and extended downwards in each top view; the extension portions 26B2 and 426B2 of the second gate lead-out portions 26Bβ, 126Bβ, 226Bβ, 426Bβ, and 526Bβ can be bent and extended upwards in each top view; the third gate lead-out portions 26Bγ, 126Bγ, and 226Bγ... The extensions 26B2 and 426B2 of the fourth gate leads 26Bδ, 126Bδ, 426Bδ, and 526Bδ can be bent and extended to the lower side of each top view. The extensions 26B2 and 426B2 of the fifth gate leads 26Bε, 126Bε, 426Bε, and 526Bε can be bent and extended to the lower side of each top view.

[0136] (3) When the above (2) is applied to the structure described in Embodiment 5, for example, the first curved portion 34α may extend to the lower side of FIG10, the second curved portion 34β may extend to the upper side of FIG10, the third curved portion 34γ may extend to the lower side of FIG10, the fourth curved portion 34δ may extend to the upper side of FIG10, and the fifth curved portion 34ε may extend to the lower side of FIG10.

[0137] (4) The position of the part of the gate lead-out portion 26B, 126B, 226B, 426B, 526B, 626B, 726B, 826B connected to the upper electrode 17B, 117B, 217B, 317B along the Y-axis direction can be changed appropriately, except as shown in the figure.

[0138] (5) The positions of the main body side connecting parts 26C, 126C, 226C, 326C, 426C, 526C, 626C, 726C, 826C and the lead-out side connecting parts 26D, 126D, 226D, 326D, 526D, 726D, 826D along the Y-axis can be appropriately changed, except as shown in the figure. In addition, the positions of the main body side connecting parts 26C, 126C, 226C, 326C, 426C, 526C, 626C, 726C, 826C and the lead-out side connecting parts 26D, 126D, 226D, 326D, 526D, 726D, 826D along the X-axis can be appropriately changed, except as shown in the figure.

[0139] (6) The multiple gate wirings 26, 126, 226, 326, 426, and 526 may include three different types, namely, the positions of the gate leads 26B, 126B, 226B, 426B, 526B, 626B, 726B, and 826B connected to the upper electrodes 17B, 117B, 217B, and 317B along the Y-axis direction, and the positions of the main body side connection parts 26C, 126C, 226C, 326C, 426C, 526C, 626C, 726C, and 826C, and the lead-side connection parts 26D, 126D, 226D, 326D, 526D, 726D, and 826D along the Y-axis direction are all different.

[0140] (7) In the structure described in Embodiment 4, the arrangement of the protrusion 33 along the Y-axis direction may be appropriately changed, except as shown in the figure.

[0141] (8) In the structures described in embodiments 6 and 7, the line width of the frame portion 36A of the common trunk wiring 36 and 636 may be appropriately changed, except as shown in the figures. In addition, the positional relationship of the shift register circuits 16 and 516, the main body side connection portions 26C, 126C, 226C, 326C, 426C, 526C, 626C, 726C, and 826C, and the lead-out side connection portions 26D, 126D, 226D, 326D, 526D, 726D, and 826D along the X-axis relative to the frame portion 36A of the common trunk wiring 36 and 636 may be appropriately changed, except as shown in the figures.

[0142] (9) In the structure described in Embodiment 7, the arrangement of the widened portion 38 along the Y-axis direction may be appropriately changed, except as shown in the figure.

[0143] (10) The circuit elements constituting the unit circuit section 16U may include a TFT in addition to the capacitor 17, and the electrodes constituting the TFT may also be "conductive sections" that intersect with the gate leads 26B, 126B, 226B, 426B, 526B, 626B, 726B, and 826B.

[0144] (11) The pixel electrode 25 may also be made of a first transparent electrode film, and the common electrode 28 may also be made of a second transparent electrode film. In this case, it is preferable to form a slit for controlling orientation on the common electrode 28.

[0145] (12) The driver 12 can also be mounted on the flexible substrate 13 using COF (Chip On Film).

[0146] (13) The planar shape of the LCD panel 11, 511 can also be a vertical rectangle, square, circle, semicircle, vertical ellipse, ellipse, trapezoid, etc.

[0147] (14) The material of the semiconductor film disposed on the array substrate 21 may also be polycrystalline silicon or the like.

[0148] (15) In addition to FFS mode, the display modes of LCD panels 11 and 511 can also be TN (Twisted Nematic) mode, VA (Vertical Alignment) mode, IPS (In Plane Switching) mode, etc.

[0149] (16) In addition to liquid crystal panels 11 and 511, display devices may also use organic EL (Electro Luminescence) display panels, EPD (microcapsule electrophoretic display panels), etc.

[0150] (17) The structures described in each embodiment can also be appropriately combined.

[0151] (17) In the structures described in embodiments 8 and 9, the main body side connecting portions 726C and 826C and the lead-out side connecting portions 726D and 826D may also be configured not to overlap each other.

[0152] (18) In the structures described in embodiments 8 and 9, the connecting electrodes 39 and 839 may also be composed of a portion of the second transparent electrode film.

[0153] Explanation of reference numerals in the attached figures: 11, 511… Liquid crystal panel (display device); 16, 516… Shift register circuit; 16Uα, 516Uα… First unit circuit section; 16Uβ, 516Uβ… Second unit circuit section; 17Aα, 317Aα, 417Aα… First lower electrode (first conductive part); 17Aβ, 317Aβ, 417Aβ… Second lower electrode (second conductive part); 17Aγ, 317Aγ, 417Aγ… Third lower electrode (third conductive part); 17Bα, 117Bα, 217Bα, 417Bα… First upper electrode (fourth conductive part); 17Bβ, 117Bβ, 217Bβ, 417Bβ… Second upper electrode (fifth conductive part); 17Bγ, 1 17Bγ, 217Bγ, 417Bγ… Third upper electrode (sixth conductive part); 20… Opposing substrate; 21… Array substrate (wiring substrate); 26α, 126α, 226α, 426α… First gate wiring (first wiring); 26β, 126β, 226β, 426β… Second gate wiring (second wiring); 26γ, 126γ, 226γ, 426γ… Third gate wiring (third wiring); 26Aα, 126Aα, 326Aα, 426Aα, 526Aα, 626Aα… First gate body portion (first wiring configuration portion); 26Aβ, 126Aβ, 326Aβ, 426Aβ, 526Aβ, 626Aβ… Second gate body portion (third wiring configuration portion). (Part); 26Aγ, 126Aγ, 326Aγ, 426Aγ, 526Aγ… Third gate body part (fifth wiring configuration part); 26Bα, 126Bα, 226Bα, 426Bα, 526Bα… First gate lead-out part (second wiring configuration part); 26Bβ, 126Bβ, 226Bβ, 426Bβ, 526Bβ… Second gate lead-out part (fourth wiring configuration part); 26Bγ, 126Bγ, 226Bγ, 426Bγ, 526Bγ… Third gate lead-out part (sixth wiring configuration part); 26Cα, 126Cα, 226Cα, 326Cα, 426Cα, 526Cα, 626Cα… First body side connection part (first end); 26Cβ, 12 6Cβ, 226Cβ, 326Cβ, 426Cβ, 526Cβ, 626Cβ… Second main body side connection (third end); 26Cγ, 126Cγ, 226Cγ, 326Cγ, 426Cγ, 526Cγ, 626Cγ… Third main body side connection (fifth end); 26Dα, 226Dα… First lead-out side connection (second end); 26Dβ, 226Dβ… Second lead-out side connection (fourth end); 26Dγ, 226Dγ… Third lead-out side connection (sixth end); 29, 529, 729, 829… Gate insulating film (first insulating film); 33α… First protrusion; 33β… Second protrusion; 34α… First bend; 34β… Second bend;34γ…Third bend; 35α…First extension; 35β…Second extension; 35γ…Third extension; 36, 636…Common trunk wiring (fourth wiring); 37α…First conductive section; 37β…Second conductive section; 37γ…Third conductive section; 38…Wide section; CP1, CP101, CP201, CP301, CP501, CP601…First intersection; CP2, CP102, CP202… CP302, CP502, CP602… Second intersection position; CP3, CP103, CP203, CP303, CP503, CP603… Third intersection position; D1, D101, D201… First distance; D2, D102, D202… Second distance; D3, D103, D203… Third distance; D4, D104, D204… Fourth distance; D5… Fifth distance; D6… Sixth distance.

Claims

1. A wiring substrate, characterized in that, It comprises: a first wiring; a first conductive portion that intersects a portion of the first wiring; and a second wiring that is spaced apart from the first wiring in a first direction. The first wiring includes a second conductive portion that intersects with a portion of the second wiring; the first wiring has a first wiring component formed by a portion of a first conductive film and a second wiring component formed by a portion of a second conductive film, with a first insulating film sandwiched between the second conductive film and the first conductive film; the first wiring component has a first end and the second wiring component has a second end connected to the first end; the first conductive portion is formed by a portion of the first conductive film; the first conductive portion and the second wiring component in the first wiring are intersected at a first intersection position; the second wiring includes a third wiring component formed by a portion of the first conductive film and a fourth wiring component formed by a portion of the second conductive film; in the third wiring component, a third end is arranged at a position in a first direction separated from the first end by a first distance; the fourth wiring component has a fourth end connected to the third end; the second conductive portion is formed by a portion of the first conductive film; the second conductive portion and the fourth wiring component in the second wiring are intersected at a second intersection position; in the fourth wiring component, a second intersection position is arranged at a position in the first direction separated from the first intersection position by a second distance, and the second distance is different from the first distance.

2. The wiring substrate according to claim 1, characterized in that, It includes: a third wiring that is spaced apart from the second wiring in the first direction from the first wiring; A third conductive portion intersects with a portion of the third wiring. The third wiring has a fifth wiring component formed by a portion of the first conductive film and a sixth wiring component formed by a portion of the second conductive film. In the fifth wiring component, a fifth end is disposed at a position in the first direction that is spaced a third distance from the third end. The sixth wiring component has a sixth end connected to the fifth end. The third conductive portion is formed by a portion of the first conductive film. The third conductive portion and the sixth wiring component in the third wiring are intersected at a third intersection position. In the sixth wiring component, the third intersection position is disposed at a position in the first direction that is spaced a fourth distance from the second intersection position, and the fourth distance is different from the third distance.

3. The wiring substrate according to claim 2, characterized in that, The first wiring, the second wiring, and the third wiring are configured such that the first distance is different from the third distance, but the second distance is equal to the fourth distance.

4. The wiring substrate according to claim 3, characterized in that, The device comprises: a fourth conductive portion formed of a portion of the second conductive film and connected to the second wiring configuration portion; a fifth conductive portion formed of a portion of the second conductive film and connected to the fourth wiring configuration portion, and disposed at a distance from the fourth conductive portion in the first direction; and a sixth conductive portion formed of a portion of the second conductive film and connected to the sixth wiring configuration portion, and disposed at a distance from the fourth conductive portion in the first direction. The first wiring configuration is such that the first end and the second end are biased away from the fifth conductive portion in the fourth conductive portion along the first direction; the second wiring configuration is such that the third end and the fourth end are biased away from the fourth conductive portion in the fifth conductive portion along the first direction; and the third wiring configuration is such that the fifth end and the sixth end are biased towards the fifth conductive portion in the sixth conductive portion along the first direction.

5. The wiring substrate according to claim 2, characterized in that, The first wiring, the second wiring, and the third wiring are configured such that the first distance is different from the third distance, and the second distance is different from the fourth distance.

6. The wiring substrate according to claim 5, characterized in that, It comprises: a fourth conductive portion, which is formed of a portion of the second conductive film and connected to the second wiring configuration portion; a fifth conductive portion, which is formed of a portion of the second conductive film and connected to the fourth wiring configuration portion, and is arranged at a distance from the fourth conductive portion in the first direction; and a sixth conductive portion, which is formed of a portion of the second conductive film and connected to the sixth wiring configuration portion, and is arranged at a distance from the fourth conductive portion in the first direction, with respect to the fifth conductive portion and away from the fourth conductive portion, wherein the first end and the second end of the first wiring are configured to be biased away from the fifth conductive portion in the first direction within the fourth conductive portion, and... The first crossing position is configured to be biased in the fourth conductive portion along a first direction towards the fifth conductive portion; the third end and the fourth end of the second wiring are configured to be biased in the fifth conductive portion along the first direction away from the fourth conductive portion; the second crossing position is configured to be biased in the fifth conductive portion along the first direction towards the fourth conductive portion; the fifth end and the sixth end of the third wiring are configured to be biased in the sixth conductive portion along the first direction towards the fifth conductive portion; and the third crossing position is configured to be biased in the sixth conductive portion along the first direction away from the fifth conductive portion.

7. The wiring substrate according to claim 5, characterized in that, The first wiring configuration has a first bend and a first extension. The first bend extends from the first end along a second direction intersecting the first direction away from the first conductive portion and then bends along the first direction. The first extension extends from the end of the first bend along the second direction away from the first end. The third wiring configuration has a second bend and a second extension. The second bend extends from the third end along the second direction away from the second conductive portion and then bends along the first direction. The second extension extends from the end of the second bend along the second direction away from the third end. The fifth wiring configuration has a third bend and a third extension. The third bend extends from the fifth end along the second direction away from the third conductive portion and then bends along the first direction. The third extension extends from the end of the third bend along the second direction away from the fifth end. The first, third, and fifth wiring configurations are configured such that a fifth distance between the first extension and the second extension in the first direction is equal to a sixth distance between the second extension and the third extension in the first direction.

8. The wiring substrate according to claim 2, characterized in that, The first wiring, the second wiring, and the third wiring are configured such that the second distance is different from the fourth distance, but the first distance is equal to the third distance.

9. The wiring substrate according to claim 8, characterized in that, The device comprises: a fourth conductive portion formed by a portion of the second conductive film and connected to the second wiring configuration portion; a fifth conductive portion formed by a portion of the second conductive film and connected to the fourth wiring configuration portion, and spaced apart from the fourth conductive portion in the first direction; and a sixth conductive portion formed by a portion of the second conductive film and connected to the sixth wiring configuration portion, and spaced apart from the fifth conductive portion in the first direction away from the fourth conductive portion. The first wiring configuration is such that the first crossing position in the fourth conductive portion is biased towards the fifth conductive portion in the first direction; the second wiring configuration is such that the second crossing position in the fifth conductive portion is biased towards the fourth conductive portion in the first direction; and the third wiring configuration is such that the third crossing position in the sixth conductive portion is biased away from the fifth conductive portion in the first direction.

10. The wiring substrate according to any one of claims 1 to 9, characterized in that, The device includes a shift register circuit having a first unit circuit connected to the second wiring configuration and a second unit circuit connected to the fourth wiring configuration. The first unit circuit includes a first conductive portion, and the second unit circuit includes a second conductive portion. The first conductive portion and the second conductive portion are arranged side by side with a gap between them along a first direction.

11. The wiring substrate according to claim 10, characterized in that, The first conductive portion has a first protrusion, which partially protrudes toward the first end along a second direction intersecting the first direction. The distance from the first protrusion to the first end is shorter than the distance from the first intersection position to the first end. The second conductive portion has a second protrusion, which partially protrudes toward the third end along the second direction. The distance from the second protrusion to the third end is shorter than the distance from the second intersection position to the third end.

12. The wiring substrate according to any one of claims 1 to 9, characterized in that, It includes: a shift register circuit, the shift register circuit having a first unit circuit section connected to the second wiring configuration section and a second unit circuit section connected to the fourth wiring configuration section; And a fourth wiring, which extends along the first direction in a second direction intersecting the first direction, between the shift register circuit and the first end and the third end, the fourth wiring being formed by a portion of the first conductive film, the first conductive portion being formed by the portion of the fourth wiring intersecting with the second wiring component, and the second conductive portion being formed by the portion of the fourth wiring intersecting with the fourth wiring component.

13. The wiring substrate according to claim 12, characterized in that, The fourth wiring is provided with a widened portion, which protrudes partially along the second direction toward the first end and the third end. The position of the widened portion protruding toward the first end is closer to the first end than the first intersection position, and the position of the widened portion protruding toward the third end is closer to the third end than the second intersection position.

14. A display device, characterized in that, It comprises: a wiring substrate according to any one of claims 1 to 9; and a counter substrate spaced apart from and disposed opposite to the wiring substrate.

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