Display panel and display device
By setting heating components and temperature switches on the light-emitting substrate, the problem of reduced luminous efficiency of silicon-based OLED display panels at low temperatures is solved, the self-heating function of the light-emitting unit is realized, and the brightness and stability of the display panel are improved.
Patent Information
- Authority / Receiving Office
- CN · China
- Patent Type
- Applications(China)
- Current Assignee / Owner
- HKC CORP LTD
- Filing Date
- 2024-10-31
- Publication Date
- 2026-05-01
AI Technical Summary
In existing technologies, the luminous efficiency of OLED light-emitting devices in silicon-based OLED display panels decreases at low temperatures, leading to reduced brightness and display abnormalities.
A heating component is set on the light-emitting carrier and electrically connected to the driving circuit layer through a heating through-hole on the glass substrate. When the temperature of the light-emitting unit is lower than the threshold, the heating component is turned on to heat the light-emitting unit. A temperature switch unit automatically adjusts the on and off of the heating circuit according to the temperature.
It effectively improves the luminous efficiency of the light-emitting unit at low temperatures, reduces brightness drop and display abnormalities, simplifies structural design, and reduces costs.
Smart Images

Figure CN121968894A_ABST
Abstract
Description
Display panel and display device Technical Field
[0001] This application relates to the field of display technology, and in particular to a display panel and display device. Background Technology
[0002] Monocrystalline silicon driving backplanes are driving substrates formed using semiconductor devices fabricated using Complementary Metal Oxide Semiconductor (CMOS) technology as driving units. Compared to conventional Active-Matrix Organic Light-Emitting Diode (AMOLED) panels that use amorphous silicon, microcrystalline silicon, or low-temperature polycrystalline silicon thin-film transistors as backplanes, monocrystalline silicon driving backplanes exhibit higher carrier mobility. Therefore, silicon-based organic light-emitting diode (OLED) display panels are currently the highest-performing display panel type used in AR / VR products.
[0003] Currently, silicon-based OLED display panels integrate the traditionally externally bonded display chip into a silicon-based driving backplane. The fabrication method involves depositing OLED light-emitting devices onto a silicon-based driving substrate. Specifically, the process involves first depositing the anode, then creating the pixel definition layer, followed by the sequential deposition of the organic light-emitting layer and the cathode. This allows for the fabrication of smaller pixel units, achieving display detail exceeding retina-level precision, and offering numerous advantages such as high resolution, high integration, low power consumption, small size, and light weight. Furthermore, in silicon-based OLED display panels, the silicon-based driving substrate itself can be driven at low temperatures, making it less susceptible to the effects of low temperatures.
[0004] However, the electroluminescent properties and temperature sensitivity of OLED luminescent materials cause their luminous efficiency to decrease significantly at low temperatures, resulting in a sharp drop in brightness. This leads to problems such as display abnormalities and low luminous efficiency in the entire composite structure. Summary of the Invention
[0005] This application provides a display panel and display device, aiming to solve the problem in the prior art where the luminous efficiency of OLED light-emitting devices decreases at low temperatures, leading to a decrease in display panel brightness and display abnormalities.
[0006] To address the aforementioned technical problems, the first technical solution provided in this application is: to provide a display panel. The display panel includes:
[0007] A driving substrate includes a driving circuit layer and a plurality of driving electrodes electrically connected to the driving circuit layer;
[0008] The light-emitting substrate includes:
[0009] A glass substrate is disposed on the driving substrate and has a plurality of electrode through holes corresponding to the driving electrodes;
[0010] Light-emitting units are arranged in an array on the side of the glass substrate away from the driving substrate, and the light-emitting units are electrically connected to the corresponding driving electrodes through the electrode through holes;
[0011] The light-emitting carrier also includes a heating component, which is disposed between adjacent light-emitting units; the glass substrate also has a heating through-hole, through which the heating component is electrically connected to the driving circuit layer.
[0012] When the temperature of the light-emitting unit is lower than the threshold temperature, the heating component is turned on to heat the light-emitting unit.
[0013] In some embodiments, the heating assembly includes a temperature switch and a heating element; the heating via is located between adjacent electrode vias; the driving substrate further includes a heating electrode electrically connected to the driving circuit layer;
[0014] The temperature switch is disposed between adjacent light-emitting units and is electrically connected to the cathode electrode of the light-emitting unit; the heating part is filled in the heating through hole, the heating part is in contact with the temperature switch on the side close to the temperature switch, and the heating part is electrically connected to the corresponding heating electrode on the side away from the temperature switch;
[0015] When the temperature of the light-emitting unit is lower than the threshold temperature, the temperature switch is turned on to heat the heating unit; when the temperature of the light-emitting unit is higher than the threshold temperature, the temperature switch is turned off.
[0016] In some embodiments, the temperature switch is made of a reversible conductor-insulator material; when the temperature is below the threshold temperature, the temperature switch becomes a conductor and is turned on to heat the heating part; when the temperature is above the threshold temperature, the temperature switch becomes an insulator and is turned off; the heating part is made of a metal or alloy material with a thermal resistance effect.
[0017] In some embodiments, the light-emitting carrier further includes a pixel definition layer disposed on the glass substrate, the pixel definition layer having a plurality of pixel openings corresponding one-to-one with the light-emitting unit; along the direction of the glass substrate away from the driving substrate, an anode electrode, a light-emitting layer and a cathode electrode are sequentially stacked in the pixel openings to form the light-emitting unit;
[0018] The pixel definition layer is further provided with a heating opening, which is located between adjacent pixel openings; the temperature switch is disposed in the heating opening and is electrically connected to the cathode electrode on the side near the cathode electrode; the projection of the heating opening on the glass substrate at least partially covers the heating through hole, so that the heating part contacts and connects to the temperature switch on the side near the temperature switch.
[0019] In some embodiments, the cathode electrode extends to the side of the pixel definition layer away from the glass substrate and is interconnected with the adjacent cathode electrode; the temperature switch unit contacts the cathode electrode on the side close to the cathode electrode to form an electrical connection.
[0020] In some embodiments, the light-emitting substrate further includes a conductive isolation structure, the conductive isolation structure including a conductive layer and an insulating top; the conductive layer is disposed on the side of the pixel definition layer away from the glass substrate and surrounds the pixel opening; the insulating top is disposed on the surface of the conductive layer away from the pixel definition layer, shields the conductive layer, and extends beyond the conductive layer in a direction parallel to the pixel definition layer; the cathode electrode extends to the conductive layer and contacts the conductive layer to form an electrical connection;
[0021] The orthographic projection of the conductive layer on the glass substrate covers the orthographic projection of the heating opening on the glass substrate; the temperature switch is disposed in the heating opening and contacts the conductive layer on the side near the conductive layer to form an electrical connection with the cathode electrode.
[0022] In some embodiments, a portion of the conductive layer near the heating opening extends into the heating opening to form an electrical connection with the temperature switch portion.
[0023] In some embodiments, the light-emitting carrier is divided into multiple interconnected heating zones, each heating zone having at least two light-emitting units and at least one heating component; at least one heating component is evenly distributed in the heating zone.
[0024] In some embodiments, the distance between the heating via and the adjacent electrode via is at least greater than 1 μm; the threshold temperature range is -40℃ to 0℃.
[0025] To address the aforementioned technical problems, the second technical solution provided in this application is: to provide a display device. The display device includes:
[0026] The display panel is the display panel provided by the above technical solution;
[0027] A control circuit board, electrically connected to the display panel, is used to control the display panel to display corresponding images.
[0028] The beneficial effects of this application are as follows: Unlike existing technologies, this application provides a display panel and a display device. The display panel includes a driving substrate and a light-emitting carrier. By making the light-emitting carrier include a glass substrate and light-emitting units disposed on the glass substrate, and by placing the glass substrate on the driving substrate, a glass substrate is further disposed between the light-emitting units and the driving substrate. The light-emitting units are fabricated on the glass substrate, which protects the driving circuit layer on the driving substrate, thereby avoiding the impact and damage to the driving circuit layer caused by directly fabricating the light-emitting units on the driving substrate, and improving product yield. By opening electrode vias in the glass substrate, the light-emitting substrate is electrically connected to the corresponding driving electrodes on the driving substrate through the electrode vias to achieve signal connection, thereby displaying the corresponding image. Furthermore, by setting a heating component between adjacent light-emitting units on the light-emitting carrier and electrically connecting it to the driving circuit layer through a heating through-hole on the glass substrate, signal connection is achieved; and when the temperature of the light-emitting unit is lower than the threshold temperature, the heating component is turned on to heat the light-emitting unit, thereby increasing the temperature of the light-emitting unit, thereby reducing the decrease in the luminous efficiency of the light-emitting unit at low temperatures, and effectively improving the problem of decreased brightness and abnormal display of the display panel at low temperatures. Attached Figure Description
[0029] To more clearly illustrate the technical solutions in the embodiments of this application, the accompanying drawings used in the description of the embodiments will be briefly introduced below. Obviously, the accompanying drawings described below are only some embodiments of this application. For those skilled in the art, other drawings can be obtained based on these drawings without any creative effort.
[0030] Figure 1 is a schematic diagram of the structure of the display panel provided in the first embodiment of this application;
[0031] Figure 2 is a schematic diagram of the heating assembly provided in the first embodiment of this application;
[0032] Figure 3 is a schematic diagram of the structure of the electrode through hole and the heating through hole provided in an embodiment of this application;
[0033] Figure 4 is a schematic diagram of the structure of the display panel provided in the second embodiment of this application;
[0034] Figure 5 is a schematic diagram of the heating assembly provided in the second embodiment of this application;
[0035] Figure 6 is a schematic diagram of the structure of the display panel provided in the third embodiment of this application;
[0036] Figure 7 is a schematic diagram of the planar distribution of the heating components provided in an embodiment of this application;
[0037] Figure 8 is a schematic diagram of the structure of a display device provided in an embodiment of this application.
[0038] Figure label:
[0039] 100. Display panel; 10. Driving substrate; 11. Silicon substrate; 12. Driving circuit layer; 13. Driving electrode; 14. Heating electrode; 15. Insulating protective layer; 20. Light-emitting carrier; 21. Glass substrate; 211. Electrode through-hole; 212. Heating through-hole; 213. Conductive part; 22. Light-emitting unit; 221. Anode electrode; 222. Light-emitting layer; 223. Cathode electrode; 23. Pixel definition layer; 231. Pixel opening; 232. Heating opening; 24. Heating assembly; 241. Temperature switch part; 242. Heating part; 25. Conductive isolation structure; 251. Conductive layer; 252. Insulating top; 2521. Base; 2522. Overhanging top; 31. Heating area; 200. Control circuit board; d. Spacing. Detailed Implementation
[0040] The embodiments of this application will now be described in detail with reference to the accompanying drawings.
[0041] In the following description, specific details such as particular system architectures, interfaces, and technologies are presented for illustrative purposes rather than for limiting purposes, in order to provide a thorough understanding of this application.
[0042] The technical solutions of the embodiments of this application will be clearly and completely described below with reference to the accompanying drawings. Obviously, the described embodiments are only a part of the embodiments of this application, and not all of the embodiments. Based on the embodiments of this application, all other embodiments obtained by those of ordinary skill in the art without creative effort are within the scope of protection of this application.
[0043] The terms "first," "second," and "third" in this application are for descriptive purposes only and should not be construed as indicating or implying relative importance or implicitly specifying the number of indicated technical features. Therefore, a feature defined as "first," "second," or "third" may explicitly or implicitly include at least one of that feature. In the description of this application, "multiple" means at least two, such as two, three, etc., unless otherwise explicitly specified. All directional indications (such as up, down, left, right, front, back, etc.) in the embodiments of this application are only used to explain the relative positional relationships and movements between components in a specific orientation (as shown in the figures). If the specific orientation changes, the directional indications also change accordingly. Furthermore, the terms "comprising" and "having," and any variations thereof, are intended to cover non-exclusive inclusion. For example, a process, method, system, product, or device that includes a series of steps or units is not limited to the listed steps or units, but may optionally include steps or units not listed, or may optionally include other steps or units inherent to these processes, methods, products, or devices.
[0044] In this document, the term "embodiment" means that a particular feature, structure, or characteristic described in connection with an embodiment may be included in at least one embodiment of this application. The appearance of this phrase in various places throughout the specification does not necessarily refer to the same embodiment, nor is it a separate or alternative embodiment mutually exclusive with other embodiments. It will be explicitly and implicitly understood by those skilled in the art that the embodiments described herein can be combined with other embodiments.
[0045] The present application will now be described in detail with reference to the accompanying drawings and embodiments.
[0046] Please refer to Figure 1, which is a schematic diagram of the structure of the display panel provided in the first embodiment of this application. In this embodiment, a display panel 100 is provided, which includes a driving substrate 10 and a light-emitting carrier 20. The driving substrate 10 and the light-emitting carrier 20 are aligned and electrically connected to drive the light-emitting substrate to display an image.
[0047] The driving substrate 10 includes a driving circuit layer 12 and a plurality of driving electrodes 13 electrically connected to the driving circuit layer 12. The driving circuit layer 12 includes a plurality of pixel driving circuits (not shown), each pixel driving circuit including a semiconductor driving device. In some embodiments, a CMOS device can be used as a semiconductor driving device to form a pixel driving circuit, thereby driving the light-emitting carrier 20 to emit light. The plurality of driving electrodes 13 are respectively electrically connected to the corresponding pixel driving circuit and a power signal to transmit corresponding driving signals to the light-emitting carrier 20.
[0048] In some embodiments, the driving substrate 10 further includes a silicon substrate 11 and an insulating protective layer 15. The silicon substrate 11 is used to support film layers such as the driving circuit layer 12, the driving electrode 13, and the insulating protective layer 15. In some embodiments, the silicon substrate 11 may be configured as a single-crystal silicon substrate. The insulating protective layer 15 is disposed on the side of the driving circuit layer 12 away from the silicon substrate 11, and has a plurality of openings, which are correspondingly disposed with respect to the driving electrode 13, thereby exposing the driving electrode 13. That is, the orthographic projection of the openings on the insulating protective layer 15 onto the driving circuit layer 12 overlaps with the projection of the corresponding driving electrode 13 onto the driving circuit layer 12, so that the openings face the driving electrode 13, thereby exposing the driving electrode 13.
[0049] The light-emitting substrate 20 includes a glass substrate 21 and light-emitting units 22 disposed on the side of the glass substrate 21 away from the driving substrate 10. The glass substrate 21 is disposed on the driving substrate 10 and has multiple electrode through-holes 211 corresponding to driving electrodes 13, allowing the light-emitting units 22 to be electrically connected to their respective driving electrodes 13 through the electrode through-holes 211. Specifically, in some embodiments, conductive portions 213 may be filled within the electrode through-holes 211. The conductive portions 213 are electrically connected to the corresponding light-emitting units 22 and driving electrodes 13 on opposite sides in the thickness direction of the glass substrate 21, thereby achieving the connection of driving signals. The light-emitting units 22 are arranged in an array on the side of the glass substrate 21 away from the driving substrate 10, and their orthogonal projections on the glass substrate 21 cover the conductive portions 213, forming an electrical connection through contact with the conductive portions 213. In some embodiments, the electrode through hole 211 may be a circular through hole or a rectangular through hole, or it may be a polygonal through hole or an elliptical through hole, etc. In the thickness direction of the glass substrate 21, the electrode through hole 211 may be a conical hole or a straight through hole, or it may be a double-sided horn-shaped hole with a small middle and large sides. The specific configuration can be set according to actual needs.
[0050] With the above arrangement, a glass substrate 21 is provided between the driving substrate 10 and the light-emitting unit 22. The light-emitting unit 22 is fabricated on the glass substrate 21. Therefore, during the fabrication process of the light-emitting unit 22, the glass substrate 21 can protect the driving circuit layer 12 on the driving substrate 10, thereby avoiding the impact and damage to the driving circuit layer 12 caused by directly fabricating the light-emitting unit 22 on the driving substrate 10, and improving the product yield. By opening electrode through-holes 211 on the glass substrate 21 and providing conductive parts 213 in the glass through-holes, the light-emitting unit 22 can be connected to the driving substrate 10 through the conductive parts 213 to achieve the image display function.
[0051] Furthermore, by using a glass substrate 21 as the substrate for the light-emitting carrier 20, compared to a silicon substrate 11, the glass substrate 21 has excellent insulation properties. Therefore, it is not necessary to fabricate an oxide insulating layer on the hole walls of the electrode vias 211 on the glass substrate 21, nor is it necessary to use specialized thin wafer holding technology, which reduces costs. Moreover, the glass substrate 21 is even cheaper than a silicon substrate, further reducing costs. Simultaneously, due to the excellent insulation properties of the glass substrate 21, electromagnetic coupling effects are less likely to occur during signal transmission, effectively reducing signal insertion loss and crosstalk, ensuring signal integrity. Furthermore, fabricating the light-emitting unit 22 on the glass substrate 21 facilitates the realization of a large-size light-emitting carrier 20. Moreover, by setting the light-emitting unit 22 on the glass substrate 21 to form the light-emitting carrier 20, the driving substrate 10 and the light-emitting carrier 20 can be fabricated separately, shortening the fabrication time and improving the production cycle.
[0052] The light-emitting unit 22 includes an anode electrode 221, a light-emitting layer 222, and a cathode electrode 223 sequentially stacked in the thickness direction of the glass substrate 21 away from the glass substrate 21. The orthogonal projection of the anode electrode 221 on the glass substrate 21 covers the corresponding electrode through-hole 211, so as to contact the corresponding conductive part 213 to form an electrical connection. The cathode electrodes 223 of each light-emitting unit 22 are electrically connected to each other, and are electrically connected to the corresponding driving electrode 13 on the driving substrate 10 through the electrode through-hole in the edge region of the glass substrate 21. Specifically, they can be electrically connected to the corresponding driving electrode 13 through the conductive part 213 in the electrode through-hole. In some embodiments, the light-emitting unit 22 may include a first light-emitting unit 22, a second light-emitting unit 22, and a third light-emitting unit 22 with different light-emitting colors, such as a red light-emitting unit 22, a green light-emitting unit 22, and a blue light-emitting unit 22, respectively, to achieve color display; specifically, the light-emitting color of the light-emitting unit 22 is determined by the light-emitting color of its light-emitting layer 222. Alternatively, in some other embodiments, the light-emitting unit 22 may be a light-emitting unit 22 of the same color, such as white, red, green, blue, or other colors, which can be set according to actual needs; for example, if the light-emitting unit 22 is white, grayscale display can be achieved by controlling the brightness of the light-emitting unit 22, and a color resist layer can be added above the light-emitting unit 22 to achieve color display. Specifically, the light-emitting unit 22 can be a current-driven light-emitting device, such as one or more of Organic Light Emitting Diode (OLED), Light Emitting Diode (LED), Mini Light Emitting Diode (Mini-LED), and Micro Light Emitting Diode (Micro-LED). In this embodiment, an OLED is used as an example for explanation.
[0053] Because the light-emitting properties of the OLED light-emitting layer 222 material are temperature-sensitive, the luminous efficiency will decrease significantly at low temperatures, leading to a sharp drop in brightness. This results in problems such as display abnormalities and low luminous efficiency in the display panel 100. To solve this technical problem, in this embodiment, the light-emitting carrier 20 further includes a heating component 24, which is disposed between adjacent light-emitting units 22. The glass substrate 21 also has a heating through-hole 212. The heating component 24 is electrically connected to the driving circuit layer 12 through the heating through-hole 212 to achieve signal connection. Thus, at low temperatures, the heating component 24 can heat the light-emitting unit 22 to raise its temperature, thereby reducing the decrease in luminous efficiency of the light-emitting unit 22 at low temperatures.
[0054] Furthermore, when the temperature of the light-emitting unit 22 is lower than the threshold temperature, the heating component 24 is turned on to heat the light-emitting unit 22. In a specific embodiment, the threshold temperature can be the temperature at which the luminous efficiency of the light-emitting unit 22 decreases by a%, where a% can range from 0 to 40%. For example, if a% is 20%, then when the luminous efficiency of the light-emitting unit 22 decreases by 20%, that is, when the luminous efficiency of the light-emitting unit 22 is 80% of its original value, the temperature at this point is the threshold temperature. When the temperature of the light-emitting unit 22 is lower than the threshold temperature, the heating component 24 is turned on to heat the light-emitting unit 22; when the temperature of the light-emitting unit 22 rises to or exceeds the threshold temperature, the heating component 24 is turned off, that is, the heating component 24 stops heating. Through the above settings, the impact of low temperature on the luminous efficiency of the OLED light-emitting unit 22 can be reduced, and the decrease in luminous efficiency of the light-emitting unit 22 due to low temperature can be reduced, thereby effectively improving the problems of decreased brightness and abnormal display of the display panel 100 at low temperatures.
[0055] Please refer to Figure 1. In this embodiment, the light-emitting carrier 20 further includes a pixel definition layer 23 disposed on the glass substrate 21. The pixel definition layer 23 has a plurality of pixel openings 231 corresponding one-to-one with the light-emitting units 22. Along the direction of the glass substrate 21 away from the driving substrate 10, an anode electrode 221, a light-emitting layer 222, and a cathode electrode 223 are sequentially stacked in the pixel openings 231 to form the light-emitting units 22. The pixel definition layer 23 is used to separate the anode electrode 221 and the light-emitting layer 222 of different light-emitting units 22, thereby preventing color cross-contamination between different light-emitting units 22.
[0056] The pixel definition layer 23 is also provided with a heating opening 232, which is located between adjacent pixel openings 231. The orthogonal projection of the heating opening 232 on the glass substrate 21 covers the heating through hole 212, that is, the heating opening 232 is connected to the corresponding heating through hole 212. The heating component 24 is disposed in the heating opening 232 and the heating through hole 212, and is electrically connected to the cathode electrode 223 on the side near the cathode electrode 223, and electrically connected to the driving circuit layer 12 on the side near the driving substrate 10, so as to form a heating circuit, so as to make the heating circuit conduct at low temperature and realize the heating function of the light-emitting unit 22.
[0057] Referring to Figure 2, which is a schematic diagram of the heating assembly provided in the first embodiment of this application, the heating assembly 24 includes a temperature switch 241 and a heating part 242. The temperature switch 241 is disposed between adjacent light-emitting units 22 and electrically connected to the cathode electrode 223 of the light-emitting unit 22. The heating part 242 fills the heating through-hole 212, and the heating part 242 is in contact with the temperature switch 241 on the side closest to it. Further, the driving substrate 10 also includes a heating electrode 14 electrically connected to the driving circuit layer 12. The heating part 242 is electrically connected to the corresponding heating electrode 14 on the side furthest from the temperature switch 241, thereby forming a heating circuit to achieve signal connection. This allows the heating assembly 24 to heat the light-emitting unit 22 at lower temperatures, thereby reducing the decrease in the luminous efficiency of the light-emitting unit 22 at low temperatures.
[0058] When the temperature of the light-emitting unit 22 is lower than the threshold temperature, the temperature switch 241 is turned on to heat the heating unit 242; when the temperature of the light-emitting unit 22 is higher than the threshold temperature, the temperature switch 241 is turned off. That is, when the temperature of the light-emitting unit 22 is lower than the threshold temperature, the temperature switch 241 is turned on, making the heating circuit open and causing the heating unit 242 to heat up, thereby heating the nearby light-emitting units 22 and improving the problem of reduced luminous efficiency caused by low temperature; when the temperature of the light-emitting unit 22 is higher than the threshold temperature, the temperature switch is turned off, making the heating circuit closed, and the heating unit 242 cannot heat up, thus preventing the light-emitting unit 22 from being damaged by excessive temperature.
[0059] The temperature switch 241 can be a temperature-sensitive switch. When the ambient temperature is higher than the threshold temperature, the temperature-sensitive switch is turned off, disconnecting the heating circuit and stopping heating. When the ambient temperature is lower than the threshold temperature, the temperature-sensitive switch is turned on, connecting the heating circuit and heating the light-emitting unit 22 through the heating element 242. By using a temperature-sensitive switch 241, which automatically switches between on and off states based on temperature, a self-heating function can be achieved without an additional temperature sensor. This simplifies the structure of the display panel 100 and eliminates the need for a control unit to control the on / off state of the temperature switch 241, thus simplifying and making the heating operation of the heating component 24 easier to control.
[0060] Specifically, the temperature switch unit 241 is made of a reversible transducer-insulator (TIC) material. When the temperature is below the threshold temperature, the temperature switch unit 241 is activated. This material can transform into a conductor at low temperatures and into an insulator when the temperature rises. Thus, the temperature switch unit 241 made of TIC material transforms into a conductor when the temperature of the light-emitting unit 22 is below the threshold temperature, thereby connecting the heating circuit of heating electrode 14—heating unit 242—temperature switch unit 241—cathode electrode 223 to heat the light-emitting unit 22. When the temperature of the light-emitting unit 22 is above the threshold temperature, the temperature switch unit 241 transforms into an insulator, i.e., the switch is deactivated, thus disconnecting the heating circuit of heating electrode 14—heating unit 242—temperature switch unit 241—cathode electrode 223 and preventing heating operation.
[0061] In a specific embodiment, the TIC material can be a composite material formed by mixing liquid metal and silicone material of a specific viscosity in a certain proportion and then allowing it to cure naturally. The liquid metal particles in this material are surrounded by silicone, exhibiting insulating properties at room temperature. When the material is exposed to low temperatures, it can transform from an insulator to a conductor, and upon heating, it can revert to its insulating state. This transition between insulating and conductive states is not only reversible but also repeatable without significant structural damage or reduction in electrical performance. Specifically, the liquid metal can be a gallium-indium alloy (EGaIn), a gallium-indium-tin alloy (EGaInSn), or a sodium-potassium alloy, and its volume increases accordingly during solidification.
[0062] This explains that the liquid metal particles initially exhibit insulating properties due to being encapsulated and isolated by the insulating silicone. However, under low temperatures, the conductive liquid metal particles undergo a phase change and solidify, simultaneously expanding rapidly. Conversely, the insulating silicone contracts under the stimulus of low temperatures, causing the liquid metal particles to be extruded from the silicone film, thus forming interconnections and exhibiting conductive properties. Upon heating, as the temperature rises, the silicone regains its elasticity, while the liquid metal particles melt from a solid state to a liquid state, resulting in a decrease in volume and returning to their silicone-encapsulated state, exhibiting insulating properties.
[0063] When fabricating the temperature switch section 241, 3D printing technology can be used to pattern the TIC material film layer to form the temperature switch section 241. Specifically, the threshold temperature, i.e., the state transition temperature of the temperature switch section 241, can be set by changing the ratio of liquid metal to silicone and the material composition. The threshold temperature range is -40℃ to 0℃. For example, if the transition temperature (threshold temperature) of the temperature switch section 241 is set to -25℃, when the temperature of the light-emitting unit 22 adjacent to the temperature switch section 241 is above -25℃, i.e., the temperature of the temperature switch section 241 is above -25℃, the temperature switch section 241 becomes an insulator and is disconnected; when the temperature of the light-emitting unit 22 adjacent to the temperature switch section 241 is below -25℃, i.e., the temperature of the temperature switch section 241 is below -25℃, the temperature switch section 241 becomes a conductor and is turned on, thereby turning on the heating circuit and causing the heating section 242 to heat up.
[0064] Specifically, the material of the heating part 242 is a metal or alloy material with thermal resistance effect, such as one or more of platinum (Pt), copper (Cu), iron (Fe), nickel (Ni), and iron-nickel alloy (Fe-Ni). The material can be selected according to actual needs to meet heating requirements, such as heating rate and thermal conductivity.
[0065] In this embodiment, the temperature switch 241 is disposed in the heating opening 232, and the heating part 242 is disposed in the heating through hole 212. Specifically, the cathode electrode 223 extends to the side surface of the pixel definition layer 23 away from the glass substrate 21, is interconnected with the adjacent cathode electrode 223, and covers the heating opening 232. The temperature switch 241 is disposed in the heating opening 232 of the pixel definition layer 23, and contacts the cathode electrode 223 on the side near the cathode electrode 223 to form an electrical connection. Further, the projection of the heating opening 232 on the glass substrate 21 at least partially covers the heating through hole 212 to communicate with the heating through hole 212. In one example, the projection of the heating opening 232 on the glass substrate 21 can completely cover the heating through hole 212 to facilitate the contact between the temperature switch 241 and the heating part 242 to form an electrical connection, and can increase the contact area and improve the reliability of the electrical connection. The heating part 242 is filled in the heating through hole 212 and is in contact with the temperature switch part 241 on the side close to the temperature switch part 241, and is electrically connected to the corresponding heating electrode 14 on the drive substrate 10 on the side away from the temperature switch, so as to form a heating circuit.
[0066] In this embodiment, the temperature switch 241 is disposed within the heating opening 232 of the pixel definition layer 23, placing it in the peripheral area of the light-emitting layer 222 of the light-emitting unit 22. This allows for better monitoring of the temperature of the light-emitting layer 222, making the state transition temperature of the switch closer to the set threshold temperature and improving the heating sensitivity of the heating component 24. Simultaneously, the heating element 242 is disposed within the heating through-hole 212 of the glass substrate 21. Due to the good thermal conductivity of the glass substrate 21, the heat generated after local heating of the heating element 242 can be rapidly conducted to the surrounding area to heat the light-emitting layer 222. Furthermore, the glass substrate 21 has thermal stability, meaning it can conduct heat quickly, preventing the temperature switch 241 from disconnecting due to insufficient heat dissipation after a local temperature rise. Moreover, the empty space on the glass substrate 21 is larger than the empty space on the film layer containing the light-emitting unit 22 and the pixel definition layer 23 above the glass substrate 21, satisfying the volume and area requirements of the heating element 242 and thus improving the heating effect.
[0067] Furthermore, by making the cathode electrode 223 electrically connected to the heating component 24, a heating drive signal is provided to the heating component 24 through the cathode electrode 223, thus using the cathode electrode 223 as one of the heating sources. Since the cathode electrode 223 is in direct contact with the light-emitting layer 222, it can most directly reflect the actual temperature around the light-emitting layer 222 at this time, thereby making the temperature sensitivity of the temperature switch section 241 higher, and making the relationship between the heating start-up time of the heating component 24 and the temperature of the light-emitting layer 222 more accurate; that is, the time difference between the moment when the temperature of the light-emitting layer 222 drops to the threshold temperature and the moment when the temperature switch of the heating component 24 is turned on is smaller. At the same time, since the cathode electrodes 223 are interconnected to form a whole-surface design, under the voltage division of the local heating voltage, the whole-surface design will quickly compensate for the voltage loss, avoiding the large impact of local voltage. Moreover, by using the cathode electrode 223 as one of the heating sources, there is no need to design an additional electrode layer, which simplifies the structure and avoids the increase of the manufacturing process and the problem of signal crosstalk between the electrode signal and other film layers.
[0068] Please refer to Figure 3, which is a schematic diagram of the structure of the electrode through-hole and the heating through-hole provided in an embodiment of this application. In this embodiment, the distance d between the heating through-hole 212 and the adjacent electrode through-hole 211 is at least greater than 1 μm. It should be noted that the adjacent electrode through-hole 211 here refers to the electrode through-hole 211 closest to the heating through-hole 212. The distance d between them is defined as follows: on the line connecting the central axis of the heating through-hole 212 and the central axis of the electrode through-hole 211, the intersection point of the electrode through-hole 211 and the connecting line is A, and the intersection point of the heating through-hole 212 and the connecting line is B. The distance AB between points A and B is the distance d between the heating through-hole 212 and the adjacent electrode through-hole 211.
[0069] Specifically, provided that the distance d between the heating through-hole 212 and the adjacent electrode through-hole 211 is at least greater than 1 μm, the diameters of the electrode through-hole 211 and the heating through-hole 212 can be set according to actual needs. In a specific embodiment, the diameters of the electrode through-hole 211 and the heating through-hole 212 can be set according to the drilling process. For example, in the case of limited space, priority can be given to ensuring the size of the electrode through-hole 211, and the diameter of the heating through-hole 212 can be appropriately reduced, but the size of the heating through-hole 212 should still be maintained as much as possible to ensure the heating effect.
[0070] Please refer to Figure 4, which is a schematic diagram of the display panel structure provided in the second embodiment of this application. In this embodiment, the light-emitting substrate 20 further includes a conductive isolation structure 25, which is used to separate the light-emitting layers 222 of each light-emitting unit 22 to realize a pixel array and avoid pixel crosstalk problems. It is also used to conduct electricity between the cathode electrodes 223 of each light-emitting unit 22, so as to achieve a mesh connection between the cathode electrodes 223 of different light-emitting units 22 and realize the uniformity of the signal of the entire surface of the cathode electrodes 223.
[0071] The conductive isolation structure 25 includes a conductive layer 251 and an insulating top 252. The conductive layer 251 is disposed on the side of the pixel definition layer 23 away from the glass substrate 21, protrudes from the pixel definition layer 23, and surrounds the pixel opening 231. The insulating top 252 is disposed on the surface of the conductive layer 251 away from the pixel definition layer 23, blocks the conductive layer 251, and extends beyond the conductive layer 251 in a direction parallel to the pixel definition layer 23. The cathode electrode 223 extends to the conductive layer 251 and contacts the conductive layer 251 to form an electrical connection. That is, the portion of the top structure extending beyond the conductive layer 251 is suspended relative to the conductive layer 251, forming a suspended structure. In the fabrication process of the vapor-deposited light-emitting layer 222 and cathode electrode 223, due to the presence of the overhang structure, the organic light-emitting layer 222 and cathode electrode 223 can form a discontinuous deposition at the bottom of the pixel opening 231. After a single etching process to form a single light-emitting unit 22, an inorganic encapsulation layer can be used to encapsulate and protect the monochromatic light-emitting layer 222 and cathode electrode 223 to form an etching protection layer. Then, the fabrication of organic light-emitting layers 222 and cathode electrodes 223 of other colors is carried out one by one. After the patterning of the three-color organic light-emitting layers 222 and cathode electrodes 223 is completed, an organic encapsulation layer + an inorganic encapsulation layer can be used for overall encapsulation. When vapor-depositing the light-emitting layer 222 and cathode electrode 223, the edge range of each film layer in the light-emitting layer 222 can be adjusted by adjusting the vapor deposition angle. Multiple conductive isolation structures 25 are provided, with adjacent conductive isolation structures 25 sharing the same side edge. This ensures that the spacing d between each light-emitting unit 22 is equal, which is beneficial for display uniformity and increasing the pixel aperture ratio 231. Specifically, the conductive isolation structure 25 is a ring-shaped structure, specifically matching the shape of the light-emitting unit 22 to prepare light-emitting units 22 with a predetermined shape.
[0072] In the direction perpendicular to the light-emitting carrier plate 20, the longitudinal cross-section of the sidewall of the conductive layer 251 can be trapezoidal, and the cross-section of the sidewall of the conductive structure in the direction parallel to the light-emitting carrier plate 20 gradually decreases in the direction close to the insulating top 252, so as to facilitate the contact setting of the cathode electrode 223 with the conductive layer 251.
[0073] The conductive layer 251 can be made of a metal or a conductive oxide. The metal can be a highly conductive metal such as copper (Cu), aluminum (Al), silver (Ag), or gold (Au), or an alloy thereof. The conductive oxide can be a highly conductive metal oxide such as indium tin oxide (ITO), indium zinc oxide (IZO), or indium gallium zinc oxide (IGZO). The conductive oxide film can coat the surface of the metal film to form a passivation protective layer, thus protecting the metal film.
[0074] Please refer to Figure 5, which is a schematic diagram of the heating assembly provided in the second embodiment of this application. Further, the orthographic projection of the conductive layer 251 on the glass substrate 21 covers the orthographic projection of the heating opening 232 on the glass substrate 21; the temperature switch portion 241 is disposed in the heating opening 232 and contacts the conductive layer 251 on the side closest to it, so as to form an electrical connection with the cathode electrode 223 through the conductive layer 251. Specifically, during fabrication, TIC material can be coated in the heating opening 232 first to form the temperature switch portion 241; then the conductive layer 251 is fabricated and covers the heating opening 232 to form an electrical connection with the temperature switch portion 241, thereby forming an electrical connection between the temperature switch portion 241 and the cathode electrode 223 after the cathode electrode 223 is deposited.
[0075] In this embodiment, by setting a conductive isolation structure 25 for fabricating patterned light-emitting units 22, the fine metal mask (FMM) evaporation process can be effectively replaced, achieving high resolution and colorization of passive matrix OLEDs. This better solves the problems of low resolution of the cathode electrode 223 template and low device yield. Furthermore, by placing the temperature switch 241 in contact with the conductive layer 251 on the side closest to the conductive layer 251, an electrical connection is formed between the conductive layer 251 and the cathode electrode 223. This allows the cathode electrode 223 to provide a heating drive signal to the heating component 24, forming the aforementioned heating circuit and achieving self-heating of the light-emitting unit 22 at low temperatures.
[0076] Please refer to Figure 6, which is a schematic diagram of the display panel structure provided in the third embodiment of this application. In this embodiment, a portion of the conductive layer 251 near the heating opening 232 extends into the heating opening 232 to form an electrical connection with the temperature switch portion 241. That is, the film deposition thickness of the temperature switch portion 241 is lower than the depth of the heating opening 232, and the lower portion of the conductive layer 251 extends into the conductive opening to form an electrical connection with the film of the temperature switch portion 241. This arrangement can improve the connection reliability between the conductive layer 251 and the temperature switch portion 241, and can increase the contact area between the conductive layer 251 and the temperature switch portion 241. This not only improves the conductivity between the conductive layer 251 and the cathode electrode 223, but also increases the temperature sensing area of the temperature switch portion 241, thereby further improving the temperature sensitivity of the temperature switch portion 241 and enhancing the heating effect of the heating assembly 24.
[0077] In this embodiment, the insulating top 252 includes an integral base 2521 and a suspended top 2522. The base 2521 is disposed on the side of the conductive layer 251 away from the glass substrate 21, protrudes from the conductive layer 251, and surrounds the pixel opening 231. The suspended top 2522 covers the surface of the base 2521 away from the conductive layer 251 and extends beyond the base 2521 in a direction parallel to the glass substrate 21. The portion extending beyond the base 2521 is suspended to form a suspended structure, i.e., the insulating top 252 is "T" shaped. Specifically, the orthogonal projection of the base 2521 onto the conductive layer 251 does not exceed the conductive layer 251, which is beneficial for improving the aperture ratio and also for facilitating the contact between the cathode electrode 223 and the conductive layer 251. The insulating top 252 may be made of SiO2 / SiNx / SiNO materials, and the different etching rates of different materials are used to achieve the "T" shaped appearance.
[0078] Please refer to Figure 7, which is a schematic diagram of the planar distribution of the heating components provided in an embodiment of this application. In this embodiment, the light-emitting carrier 20 is divided into a plurality of interconnected heating zones 31, and each heating zone 31 is provided with at least two light-emitting units 22 and at least one heating component 24; at least one heating component 24 is evenly distributed in the heating zone 31.
[0079] This can be understood as not needing to create heating openings 232 and install heating components 24 in each pixel definition layer 23 below each conductive layer 251. The light-emitting substrate 20 can be divided into multiple heating zones 31, each heating zone 31 containing m rows and n columns of light-emitting units 22, i.e., each heating zone 31 contains m×n light-emitting units 22, where m and n are both positive integers, and m×n is a positive integer greater than or equal to 2. Each heating zone 31 can be equipped with at least one heating component 24 to heat the light-emitting units 22 within the heating zone 31. For example, in one example, each heating zone 31 has 2×2 light-emitting units 22 and a heating component 24, which is located at the center of the heating zone 31. The distance between the heating component 24 and the center point of the four light-emitting units 22 is equal, so that the heating effect of the heating component 24 on each light-emitting unit 22 is more uniform. In another example, each heating zone 31 has m×n light-emitting units 22, where m and n are greater than or equal to 3. Several (at least two) heating components 24 are set in the heating zone 31, and the several heating components 24 are evenly distributed in the heating zone 31 to ensure the heating rate and heating uniformity of the light-emitting units 22.
[0080] Please refer to Figure 8, which is a schematic diagram of the structure of a display device provided in an embodiment of this application. In this embodiment, a display device is provided that can be used in display fields such as tablets, mobile phones, automotive displays, VR glasses, and lighting equipment.
[0081] The display device includes a display panel 100 and a control circuit board 200. The control circuit board 200 is electrically connected to the display panel 100 and provides various driving signals, power signals, and other driving signals required by the display panel 100 to control the display panel 100 to display corresponding images. The specific structure and function of the display panel 100 are the same as or similar to those of the display panel 100 in the above embodiments, and can achieve the same technical effects; please refer to the relevant description above for details.
[0082] This display device is suitable for low-temperature environments and can self-heat the light-emitting unit 22 in low-temperature environments to improve the problem of reduced light-emitting efficiency of the light-emitting unit 22 caused by low temperature, and effectively improve the problem of decreased brightness and abnormal display of the display panel 100 at low temperatures.
[0083] The above are merely embodiments of this application and do not limit the scope of patent protection of this application. Any equivalent structural or procedural changes made using the content of this application’s specification and drawings, or direct or indirect applications in other related technical fields, are similarly included within the scope of patent protection of this application.
Claims
1. A display panel, comprising: A driving substrate includes a driving circuit layer and a plurality of driving electrodes electrically connected to the driving circuit layer; A light-emitting carrier includes: a glass substrate disposed on a driving substrate, having a plurality of electrode through holes corresponding to the driving electrodes; light-emitting units arranged in an array on the side of the glass substrate away from the driving substrate, the light-emitting units being electrically connected to the corresponding driving electrodes through the electrode through holes; characterized in that the light-emitting carrier further includes a heating component disposed between adjacent light-emitting units; the glass substrate also has heating through holes, the heating component being electrically connected to the driving circuit layer through the heating through holes; when the temperature of the light-emitting unit is lower than a threshold temperature, the heating component is turned on to heat the light-emitting unit.
2. The display panel according to claim 1, characterized in that, The heating assembly includes a temperature switch and a heating element; the heating via is located between adjacent electrode vias; the driving substrate further includes a heating electrode electrically connected to the driving circuit layer; the temperature switch is disposed between adjacent light-emitting units and electrically connected to the cathode electrode of the light-emitting unit; the heating element fills the heating via, the heating element is in contact with the temperature switch on the side closer to the temperature switch, and the heating element is electrically connected to the corresponding heating electrode on the side farther from the temperature switch; when the temperature of the light-emitting unit is less than the threshold temperature, the temperature switch is turned on to heat the heating element; when the temperature of the light-emitting unit is greater than the threshold temperature, the temperature switch is turned off.
3. The display panel according to claim 2, characterized in that, The temperature switch is made of a reversible conductor-insulator material; when the temperature is below the threshold temperature, the temperature switch becomes a conductor and conducts, thereby heating the heating part; when the temperature is above the threshold temperature, the temperature switch becomes an insulator and disconnects; the heating part is made of a metal or alloy material with a thermal resistance effect.
4. The display panel according to claim 2, characterized in that, The light-emitting carrier also includes a pixel definition layer disposed on the glass substrate. The pixel definition layer has a plurality of pixel openings corresponding one-to-one with the light-emitting units. Along the direction away from the driving substrate on the glass substrate, an anode electrode, a light-emitting layer, and a cathode electrode are sequentially stacked in the pixel openings to form the light-emitting units. The pixel definition layer also has heating openings located between adjacent pixel openings. A temperature switch is disposed in the heating opening and is electrically connected to the cathode electrode on the side closer to the cathode electrode. The projection of the heating opening on the glass substrate at least partially covers the heating through-hole, so that the heating part contacts and connects to the temperature switch on the side closer to the temperature switch.
5. The display panel according to claim 4, characterized in that, The cathode electrode extends to the side of the pixel definition layer away from the glass substrate and is interconnected with the adjacent cathode electrode; the temperature switch unit contacts the cathode electrode on the side close to the cathode electrode to form an electrical connection.
6. The display panel according to claim 4, characterized in that, The light-emitting substrate further includes a conductive isolation structure, which includes a conductive layer and an insulating top. The conductive layer is disposed on the side of the pixel definition layer away from the glass substrate and surrounds the pixel opening. The insulating top is disposed on the surface of the conductive layer away from the pixel definition layer, blocks the conductive layer, and extends beyond the conductive layer in a direction parallel to the pixel definition layer. The cathode electrode extends to the conductive layer and contacts the conductive layer to form an electrical connection. The orthographic projection of the conductive layer on the glass substrate covers the orthographic projection of the heating opening on the glass substrate; the temperature switch is disposed in the heating opening and contacts the conductive layer on the side near the conductive layer to form an electrical connection with the cathode electrode.
7. The display panel according to claim 6, characterized in that, The conductive layer extends into the heating opening from the side closest to it, so as to contact the temperature switch and form an electrical connection.
8. The display panel according to claim 1, characterized in that, The light-emitting carrier is divided into multiple interconnected heating zones, each heating zone having at least two light-emitting units and at least one heating component; at least one heating component is evenly distributed in the heating zone.
9. The display panel according to claim 1, characterized in that, The distance between the heating through-hole and the adjacent electrode through-hole is at least greater than 1 μm; the threshold temperature range is -40℃ to 0℃.
10. A display device, characterized in that, include: The display panel is the same as any one of claims 1-9; the control circuit board is electrically connected to the display panel and is used to control the display panel to display corresponding images.