Electrochromic device with maximum local battery potential consistent with detection voltage

Abstract

An electrochromic device is provided. The device includes a first transparent substrate, a second transparent substrate, a first conductive layer having a first resistance gradient disposed on an inner surface of the first transparent substrate, and a second conductive layer having a second resistance gradient disposed on an inner surface of the second transparent substrate. The device further includes a first bus bar in contact with the first conductive layer, a second bus bar in contact with the second conductive layer, and a first detection voltage pad disposed on an inner surface of the first transparent substrate, the detection voltage pad configured to measure a local battery potential at a detection voltage measurement location within the electrochromic device, the first resistance gradient and the second resistance gradient are configured to form a region containing a maximum local battery potential that substantially coincides with the detected voltage measurement location.

Description

Background Technology

[0001] Commercially available switchable glass devices are known for use in rearview mirrors, car windows, aircraft window assemblies, sunroofs, and building windows in motor vehicles. Such devices may include, for example, inorganic electrochromic devices, organic electrochromic devices, switchable rearview mirrors, and hybrids of the above, having two conductive layers with one or more active layers disposed between them. When a voltage is applied across these conductive layers, the optical properties of one or more of the layers change. This change in optical properties is typically a modulation of the transmittance of the visible or solar portion of the electromagnetic spectrum. For ease of description, the two optical states are referred to as a light-colored state and a dark-colored state in the following discussion; however, it should be understood that these are merely examples and relative terms (i.e., one state is "lighter" or has higher transmittance than the other), and for a particular electrochromic device, a series of light-colored and dark-colored states may exist between two extreme states; for example, switching may be possible between intermediate light-colored and intermediate dark-colored states within this series.

[0002] In smaller electrochromic devices, such as electrochromic rearview mirror assemblies, the transition between light and dark states is typically rapid and uniform. However, in large-area electrochromic devices, the transition between light and dark states can be slow and spatially inhomogeneous. Gradual, non-uniform coloring or transitions are a common problem in large-area electrochromic devices. This problem is often referred to as the "iris effect," and it typically results from a voltage drop in the transparent conductive coating that provides electrical contact to one or both sides of the device. For example, when a voltage is initially applied to the device, the potential is typically maximum near the edges (where the voltage is applied) and minimum at the center. Therefore, there can be a significant difference in transmittance between the device's edges and center. However, over time, the voltage difference between the center and edges decreases, and so does the transmittance difference between the center and edges. In this case, the electrochromic medium typically exhibits non-uniform transmittance, specifically, the transmittance initially changes in the region near the applied potential, and then gradually changes towards the center of the device as the transition process progresses. Although the iris effect is most common in relatively large devices, it can also occur in smaller devices with correspondingly higher resistivity conductive layers. Attached Figure Description

[0003] To facilitate further description of the embodiments, the following figures are provided:

[0004] Figure 1A This is a schematic cross-sectional view of a multilayer electrochromic device according to some embodiments.

[0005] Figure 1B and Figure 1CThis is a schematic example diagram of an electrochromic device including a detection voltage pad according to some embodiments.

[0006] Figure 2 This is a schematic diagram of an electrochromic device, which has a substrate 2008, a conductive layer 2001 disposed on top of the substrate, and a busbar applied to an edge 2003.

[0007] Figure 3A For schematic purposes, a top conductive layer 2001, a bottom conductive layer 2002, a busbar 2003 that forms contact with the top conductive layer at x=0, and a busbar 2003 at x=x t Busbar 2004 that forms contact with the bottom conductive layer.

[0008] Figure 3B One embodiment includes a graph, illustrating Figure 3A The surface resistance R(x) of the top conductive layer 2001 varies with position (x), and Figure 3A The surface resistance R'(x) of the bottom conductive layer 2002 varies with position (x). Figure 4 This is a schematic diagram of a patterned conductive layer 301, which has a transparent conductive material and a plurality of etched lines 302 formed therein. Figure 4 The dark areas within the magnified region represent linear patterns indicating gaps in the conductive layer. Figure 5 This is a schematic diagram of a patterned conductive layer 301, which has a transparent conductive material and a plurality of etched lines 302 formed therein. Figure 5 An example is shown where each gradation group contains two gradations, a valve width of 306, and an offset of 308 between the segments of adjacent gradations for each gradation group x. n All remain constant, but the lengths of the etched segments 304a, 304b, and 304c differ for different groups of etched segments, resulting in different resistances experienced by electrons when passing through different groups of etched segments. Figure 6 This is a schematic diagram of a patterned conductive layer 3501, which has a transparent conductive material and busbars 3511, and the material has a plurality of etched lines 3502. Furthermore, Figure 6 The graph shows the relationship between the resistance between the busbar and the line parallel to the busbar (where the busbar is located at x=0 and the parallel line is located at position x) and position (x) in different embodiments. Figure 7 A simulated potential distribution diagram of an exemplary patterned conductive layer is shown. Figure 8 This is a schematic diagram of a patterned conductive layer 301, which has a transparent conductive material and a plurality of etched lines 302 formed therein. Figure 9 The graph shows the relationship between the resistance between the busbar and the straight line parallel to the busbar (where the busbar is located at x=0 and the parallel line is located at position x) and position (x) in the uniform conductive layer embodiment and the variable resistivity conductive layer embodiment. Figures 10A to 10E A contour plot of a series of sheet resistances Rs shows the sheet resistance in the first conductive layer and / or the second conductive layer as a function of position (two-dimensional) within the first conductive layer and / or the second conductive layer. The contour plot also includes lines of equal resistance (sometimes called contour lines) and lines of resistance gradient (lines perpendicular to the lines of equal resistance). These lines are formed by various alternative busbar arrangements of devices with square and circular perimeters. Figures 11A to 11D This is a schematic diagram of a series of patterned conductive layers 3201, which have a transparent conductive material and a plurality of etched lines 3202 formed therein. Figures 11A to 11D The dark areas forming linear patterns within the magnified region represent gaps in the conductive layer. Figures 12A to 12S The structure includes a non-rectangular electrochromic device, and details and results obtained by modeling the structure of the device according to some embodiments. Figure 13A and Figure 13B This is a schematic example diagram of an electrochromic device having scribe lines forming a resistance gradient in a conductive layer, according to some embodiments. Figures 14A to 14G This is an example diagram of a non-rectangular electrochromic device having a busbar and a detection voltage pad, according to some embodiments. Figure 15 This is an exploded view of the multilayer device shown in Figure 1. Figure 16A The graph shows the geometric structure and... Figure 2 , Figure 3A and Figure 3B The diagram shows the surface resistance distribution curve along the resistance gradient line in a similar single rectangular conductive layer. Figure 16B The graph shows that it can be approximated by... Figure 13A The resistance of each etched line group in the surface resistance distribution shown. Figure 17A The graph shows... Figure 3A In the simple geometric structure, the surface resistance distribution curves along the resistance gradient lines on the two substrates. Figure 17B The graph shows that it can be approximated by... Figure 14A The resistance of each etched line group in the surface resistance distribution shown. Figure 18The graph shows the change in transmittance over time in an electrochromic device containing a patterned conductive layer as it transitions from a faded state to a dark state. The graph illustrates the transmittance at two different locations on the device: one near the center and the other approximately 2 cm from the edge of one of the busbars. Figure 19 The graph shows the difference between the transmittance near the center of a uniform electrochromic device and the transmittance near the edge of a patterned electrochromic device. Figure 20A The surface resistivity distribution curve is shown. Figure 20B Showing the simulation Figure 20A The resistance of each etched line group in the mid-surface resistance distribution. Figure 21 The transmittance difference is shown at different locations on the device. Figure 22A Images (optical photographs) of the device during the fading process. Figure 22B Images of the same device during the darkening process. Figure 22C This is an image (optical photograph) of the device during the fading process, with increased contrast to highlight the pattern. Figure 22D for Figure 22C A magnified view of the area. Figure 23 An example of a non-rectangular electrochromic device is shown, according to some embodiments, after 120 seconds of switching from a faded state to a dark state. Figure 24A and Figure 24B An example of an electrochromic device is shown, according to some embodiments, after 120 seconds of switching from a faded state to a dark state. Figure 25A and Figure 25B An example of an electrochromic device is shown, according to some embodiments, after 120 seconds of switching from a faded state to a dark state. Figure 25C and Figure 25D An example of a partial area of ​​the scribing pattern is shown, illustrating how the scribing pattern can be adjusted in the x and y directions to form... Figure 25A and Figure 25B The resistance gradient of the corresponding device is shown. Figure 26A and Figure 26B These are top views of the detection voltage pads on the anode and cathode sides of the device, according to some embodiments. Figure 27A and Figure 27B All of these show time-series diagrams illustrating the process of an electrochromic window switching from a faded state to a dark state according to some embodiments. The corresponding reference numerals indicate the parts that run through the figures. Furthermore, the relative thicknesses of layers in different figures do not represent actual dimensional relationships. For example, the substrate is typically much thicker than other layers. These figures are drawn solely to illustrate the connection principle and do not provide any dimensional information. Abbreviations and Definitions The following definitions and methods are provided to better define the scope of this disclosure and to guide those skilled in the art in implementing it. Unless otherwise stated, the terminology should be understood in accordance with its conventional usage by those skilled in the art. The term "anodic electrochromic layer" refers to an electrode layer that transitions from a state of higher transmittance to a state of lower transmittance when ions are removed. The term "cathode electrochromic layer" refers to an electrode layer that transitions from a state of higher transmittance to a state of lower transmittance when ions are inserted. The terms "conductive" and "resistive" refer to the electrical conductivity and resistivity of a material. The term "convex polygon" refers to a simple polygon where each interior angle is less than or equal to 180 degrees, and the line segment between any two vertices lies inside or on the boundary of the polygon. Some examples of convex polygons include triangles, rectangles, pentagons, hexagons, etc., where each interior angle is less than or equal to 180 degrees, and the line segment between any two vertices lies inside or on the boundary of the polygon. The term “interlayer resistance” used in connection with layers (or elongated structures) refers to the resistance encountered when current flows substantially perpendicular to the main surface of the layer (or elongated structure). The term "conductive layer" refers to a layer that can conduct electrons. In some cases, conductive layers can also transport ions. Some examples of conductive layers include transparent conductive oxide layers, conductive nanowires embedded in conductive or non-conductive matrices, and thin metal layers (e.g., less than 100 nanometers or less than 10 nanometers thick). The term "electrochromic layer" refers to a layer containing electrochromic materials. The term "electrochromic material" refers to a material whose optical properties can be reversibly altered through the insertion or extraction of ions and electrons. For example, an electrochromic material can switch between a colored, translucent state and a transparent state. The term "electrode layer" refers to a layer that can conduct both ions and electrons. This electrode layer contains a material that can be oxidized when ions are inserted into the material and reduced when ions are extracted from the layer. Changes in the oxidation state of this material within the electrode layer are the cause of changes in the optical performance of the device. The term "electrical potential," or simply "potential," refers to the voltage generated across the terminals of a device that contains electrodes / ionic conductors / electrode stacks. The term "overdrive" refers to applying a potential (i.e., voltage) above a predetermined threshold to an electrochromic device or a localized region of an electrochromic device. For example, if a voltage applied to the busbar of the device causes the local cell potential in that region of the device to exceed a threshold (e.g., greater than 1.5 volts, or greater than 1.6 volts), that region of the device is overdriven. This threshold can be determined (e.g., experimentally) as an upper limit to the voltage at which the device is more susceptible to damage or accelerated aging. The term “surface resistance” used in connection with layers (or elongated structures) refers to the resistance encountered when current flows substantially parallel to the main surface of the layer (or elongated structure). In patterned layers, surface resistance refers to the resistance encountered when current flows substantially parallel to the main surface of the layer (or elongated structure) on a length scale larger than the pattern feature size; therefore, the measured surface resistance includes the influence of the pattern feature. The term "transmissive" is used to describe the property of electromagnetic radiation passing through a material. The term "transparent" is used to indicate that electromagnetic radiation can penetrate a large amount of material, such that objects located, for example, on the other side or behind the material, can be clearly seen or imaged using appropriate image sensing techniques. Detailed Implementation This disclosure describes an electrochromic device comprising a conductive layer having a resistance gradient (or resistance variation, or surface resistance gradient). The resistance gradient can be configured to form a region of localized maximum cell potential (or voltage drop across the electrochromic device). A detection voltage pad is positioned aligned with this region of localized maximum cell potential. The detection voltage pad can be formed, for example, by isolating (e.g., by scribing or etching) a region of the conductive layer. Devices with a resistance gradient can intentionally create such non-uniform localized cell potentials on the device, and such devices have beneficial effects. The advantage of this configuration is that the measured values ​​of the sense voltage pads can be used by the driver during device switching, for example, by measuring the sense voltage and applying variable voltage and current to keep the sense voltage at or below a predetermined threshold. Therefore, configuring the resistance gradient of the conductive layer to form a region of local maximum cell potential (or voltage drop) at the location of the sense voltage pads can prevent overdrive in any unmonitored area (i.e., the local cell potential exceeds the threshold, in which case the device may be damaged or experience accelerated aging). In addition to being configured to form a region of local maximum battery potential, or alternatively, the resistance gradient can be configured in other ways. For example, the resistance gradient can be configured to improve the switching uniformity and / or switching speed of the electrochromic device, for example, for rectangular or non-rectangular devices. Some examples of non-rectangular electrochromic devices are devices with trapezoidal (e.g., right trapezoidal), triangular, pentagonal, circular, elliptical, semi-circular, or composite linear shapes. In some cases, electrochromic devices with a uniform conductive layer (i.e., no resistance gradient) exhibit uneven switching (e.g., iris effect, or faster switching near one busbar than another). The electrochromic device with a resistance gradient described herein achieves superior spatial uniformity of optical performance when switching between different transmittance levels compared to devices without a resistance gradient. In other words, the coloring or fading process of this electrochromic device is more uniform when switching between different color levels. This "uniform switching" (or more uniform switching, or improved switching uniformity) can be achieved by placing a gradient transparent conductive layer at the contact point with the electrodes of the electrochromic device. This gradient transparent conductive layer helps to mitigate the effective voltage drop across the substrate. This effect is most pronounced in large-scale electrochromic devices with sufficiently large distances between busbars and significant effective voltage drops. The resistance gradient used to improve switching uniformity can also be adjusted to create a localized region of maximum battery potential (or voltage drop) aligned with the sense voltage pad. Intentionally setting this type of non-uniformity in the resistance gradient is advantageous because it helps prevent overdrive in other areas of the device (i.e., areas not aligned with the sense voltage pad). In some cases, the localized region of maximum battery potential is configured to align with a predetermined location on the sense voltage pad (e.g., for manufacturing or practical applications, such as the setup or limitations of the manufacturing equipment, or the requirement that all electrical connections be located near specific edges or corners of the device). In other cases, the location of the sense voltage pad can be aligned with the location of the localized maximum battery potential (e.g., where the geometry of the device and busbar makes it easier to form a localized maximum battery potential in certain areas). In some cases, the electrochromic devices with resistance gradients described herein can improve the spatial uniformity of optical performance when switching between different transmittance levels, but the problem of non-uniform switching still exists (e.g., even in modeling, the switching process of the device (or the local cell potential within the entire effective region of the device) is non-uniform). In cases of this type of non-uniform switching, the resistance gradient of the conductive layer can be configured to form a region of local maximum cell potential (or voltage drop) at the location of the detection voltage pad, thereby preventing over-driving in unmonitored areas of such devices. There are several reasons why the switching process (or local cell potential during the switching process) of electrochromic devices cannot achieve perfect uniformity. For example, electrochromic devices with non-rectangular substrates and / or irregular busbars face challenges that make it difficult (or impossible) for the device to achieve perfect uniformity during switching. In some cases, manufacturing limitations restrict the types of gradients that can be fabricated, preventing the device from achieving uniform switching throughout the entire effective region. Furthermore, manufacturing deviations in actual production can cause different local cell potentials in different areas of a basically uniform device. Therefore, it is advantageous to configure the resistance gradient of the conductive layer to intentionally form a region with a slightly higher local cell potential aligned with the sense voltage pad. In other words, it is advantageous to configure the device as non-uniform (or with higher non-uniformity) by setting a region with a locally high cell potential aligned with the sense voltage pad. This document describes a conductive layer resistance gradient that enables electrochromic devices to achieve uniform switching (or improve switching uniformity) and forms a localized region of maximum cell potential aligned with the detection voltage pads. For example, a resistance gradient can be formed using a pattern in a transparent conductive layer of uniform thickness on an electrochromic device substrate. This document also describes methods for forming this pattern using etching (especially laser etching or scribing). In some embodiments, a patterned transparent conductive layer having a plurality of scribing groups is described, along with an electrochromic device comprising such a gradient-patterned transparent conductive layer. In other cases, a resistance gradient can be formed using variations in the thickness or electrical properties of the transparent conductive layer. Figure 1AThis is a cross-sectional structural view of an electrochromic device 1 according to some embodiments. From the center outwards, the electrochromic device 1 includes an ion conductor layer 10. A first electrode layer 20 is disposed on one side of the ion conductor layer 10 and in contact with a first surface of the ion conductor layer 10, and a second electrode layer 21 is disposed on the other side of the ion conductor layer 10 and in contact with a second surface of the ion conductor layer 10. Furthermore, at least one of the first electrode layer 20 and the second electrode layer 21 contains an electrochromic material; in one embodiment, both the first electrode layer 20 and the second electrode layer 21 contain an electrochromic material. This central structure, namely layers 20, 10, and 21, is disposed between a first conductive layer 22 and a second conductive layer 23 formed by a gradient transparent conductive layer. These conductive layers are bonded to external substrates 24 and 25. Layers 22, 20, 10, 21, and 23 are collectively referred to as an electrochromic stack 28. Conductive layer 22 is electrically contacted with one terminal of a power source (not shown) via busbar 26, and conductive layer 23 is electrically contacted with the other terminal of a power source (not shown) via busbar 27. Therefore, the transmittance of the electrochromic device 10 can be changed by applying a voltage. This voltage causes electrons and ions to move between the first electrode layer 20 and the second electrode layer 21, thereby altering the optical state of the electrochromic material in the first and / or second electrode layers. This switches the electrochromic device 1 from a higher transmittance state to a lower transmittance state, or vice versa. In one embodiment, the electrochromic device 1 is transparent before the voltage pulse is applied and becomes less transparent (e.g., more reflective or colored) after the voltage pulse is applied, and vice versa. It should be understood that references to transitions between lower and higher transmittance states are not limiting descriptions, but rather intended to encompass all possible transitions in transmittance for electromagnetic radiation achievable by electrochromic materials. For example, a change in transmittance can be a transition from a first optical state to a second optical state, where the second optical state is: (i) relatively higher absorptivity (i.e., lower transmittance) compared to the first state; (ii) relatively lower absorptivity (i.e., higher transmittance) compared to the first state; (iii) relatively higher reflectivity (i.e., lower transmittance) compared to the first state; (iv) relatively lower reflectivity (i.e., higher transmittance) compared to the first state; (v) relatively higher reflectivity and absorptivity (i.e., lower transmittance) compared to the first state; or (vi) relatively lower reflectivity and absorptivity (i.e., higher transmittance) compared to the first state. Furthermore, this change can occur between two extreme optical states achievable by the electrochromic device, for example, between a first transparent state and a second state that is opaque or reflective (mirror-like). Alternatively, the change can occur between two optical states, where at least one optical state lies within the spectral range between the two extreme states achievable by a particular electrochromic device (e.g., transparent vs. opaque, or transparent vs. specular). Unless otherwise specified herein, whenever references are made to lower and higher transmittance, or even fade-color transitions, the corresponding device or process encompasses other optical state transitions, such as non-reflective vs. reflective, transparent vs. opaque, etc. Furthermore, the term "faded" refers to an optically neutral state, such as colorless, transparent, or translucent. Additionally, unless otherwise specified herein, the "color" of an electrochromic transition is not limited to any particular wavelength or wavelength range. Those skilled in the art will recognize that the choice of suitable electrochromic material and counter electrode material determines the type of optical transition. Generally, the change in transmittance preferably includes the change in transmittance of electromagnetic radiation with wavelengths in the infrared to ultraviolet radiation range. For example, in one embodiment, the change in transmittance is primarily a change in transmittance of electromagnetic radiation in the infrared spectrum. In a second embodiment, the change in transmittance is a change in transmittance of electromagnetic radiation with wavelengths primarily in the visible light spectrum. In a third embodiment, the change in transmittance is a change in transmittance of electromagnetic radiation with wavelengths primarily in the ultraviolet spectrum. In a fourth embodiment, the change in transmittance is a change in transmittance of electromagnetic radiation with wavelengths primarily in the ultraviolet and visible light spectra. In a fifth embodiment, the change in transmittance is a change in transmittance of electromagnetic radiation with wavelengths primarily in the infrared and visible light spectra. In a sixth embodiment, the change in transmittance is a change in transmittance of electromagnetic radiation with wavelengths primarily in the ultraviolet, visible, and infrared spectra. The materials constituting the electrochromic stack 28 may include organic or inorganic materials, and may be solid or liquid. For example, in some embodiments, the electrochromic stack 28 comprises inorganic materials, solid materials (i.e., in a solid state), or both inorganic and solid materials. Inorganic materials have demonstrated superior reliability in building applications. Solid materials also have the advantage of not exhibiting the sealing and leakage problems common with liquid materials. It should be understood that any one or more layers in the stack may contain a certain amount of organic material, but in many embodiments, one or more layers contain only a small amount of organic matter or no organic matter at all. The same applies to liquid matter that may be present in small amounts in each layer. In some other embodiments, some or all of the materials constituting the electrochromic stack 28 are organic materials. Organic ion conductors can achieve higher mobility, thus potentially enabling devices to achieve better switching performance. Organic electrochromic layers can achieve higher contrast and a wider variety of color choices. The various layers in the electrochromic device will be discussed in detail below. It should also be understood that solid materials can be formed by deposition or other methods using processes employing liquid components, such as certain processes employing sol-gel or chemical vapor deposition. Refer again Figure 1A The power supply (not shown) connected to busbars 26 and 27 is typically a voltage source with optional current limiting or current control functions, and can be configured to work in conjunction with local thermal sensors, photosensitive sensors, or other environmental sensors. This voltage source can also be configured to connect to an energy management system, such as a computer system that controls the electrochromic devices based on factors such as season, time, and measured environmental conditions. Such energy management systems, combined with large-area electrochromic devices (e.g., electrochromic building windows), can significantly reduce building energy consumption. In some embodiments, the electrochromic device includes: two conductive layers, one or more of which have a resistance gradient (or sheet resistance gradient); at least two busbars; and a detection voltage pad configured to measure the local cell potential at a detection voltage measurement location within the electrochromic device. In some cases, the electrochromic device may include two detection voltage pads (each disposed on an opposing substrate of the electrochromic device), and a detection voltage can be measured between the two detection voltage pads. In some cases, the electrochromic device may include a single detection voltage pad, and a detection voltage can be measured between the detection voltage pad and a busbar. Furthermore, the resistance gradient (or sheet resistance gradient) of one or more conductive layers may be configured (or optimized, adjusted, or designed) to accommodate the measurement of the detection voltage. For example, the resistance gradient of one or more conductive layers may be configured to approximately align the detection voltage pad with the region where the maximum voltage drop occurs between the conductive layers during switching. This configuration is advantageous because it helps prevent the applied voltage from causing a voltage drop in a region of the electrochromic device to exceed a threshold voltage, thereby preventing device damage (e.g., direct damage, accelerated aging, or reduced device durability). Applying the highest possible voltage to the device to achieve rapid switching, while avoiding device damage (or accelerated aging), also has advantages. The resistance gradient in one or more conductive layers can be formed by any method, such as patterning a transparent conductive material (e.g., a transparent conductive oxide), changing the thickness of the transparent conductive material, changing the defect concentration of the transparent conductive material, or changing the properties of the transparent conductive material (e.g., changing the concentration of conductive nanowires embedded in the matrix), as will be further described below. Figure 1B This is a schematic example diagram of an electrochromic device D01 including a detection voltage pad D40, defined by an isolation scribe line D60. A substrate D10 is shown, on which a conductive layer D20 is attached. Busbar D30 is connected to the conductive layer D20, and busbar D35 is connected to the conductive layer on the opposite substrate. Figure 1B (Not shown in the image) is connected. In this example, the detection voltage pad D40 is formed by removing the conductive layer D20 along the edge D60 (e.g., by laser scribing or chemical etching). Figure 1BIn this example, the conductive layer D20 does not extend to the edge of the substrate D10. However, in other examples, the conductive layer D20 extends to the edge of the substrate D10, and etched lines can be formed in the conductive layer D20 as an edge D60, thereby defining the shape of the detection voltage pad D40. The figure also shows a detection voltage terminal D50, which can be connected to the driver D80 via circuit D85. Circuit D85 may include one or more of connectors, flexible circuitry, wires, ribbon cables, and other components for electrically connecting the detection voltage terminal D50 to the driver D80. Buses D30 and D35 may also be connected to the driver D80 to control the electrochromic device, thereby allowing the driver D80 to select the first bus D30, the second bus D35, and the detection voltage terminal D50, respectively. exist Figure 1B In the example shown, the detection voltage pad D40 is connected to the conductive layer D20 and configured to detect the voltage (or local cell potential) at the detection voltage measurement location D70 within the effective area of ​​the device D01. A scribe line D60 forms the detection voltage pad D40 to include a thin region (in some examples, a transparent conductive oxide wire) that connects the detection voltage terminal D50 to the detection voltage measurement location D70. The detection voltage can be measured using the driver D80, and almost no current flows through the detection voltage pad D40, resulting in a small voltage drop between the detection voltage measurement location D70 and the detection voltage terminal D50. Therefore, the detection voltage pad D40 can be used to measure the local cell potential at the detection voltage measurement location D70 in the device D01. In this example, the detection voltage pad D40 is close to or adjacent to the detection voltage measurement location D70. In this example, the detection voltage terminal D50 is close to or adjacent to the detection voltage measurement location D70. In other examples, the detection voltage terminal D50 may be physically spaced from and connected to the detection voltage measurement location D70, such that the voltage drop between the detection voltage terminal D50 and the detection voltage measurement location D70 is small (e.g., less than 100 mV, or less than 50 mV). In some cases, the detection voltage pad D40 is close to the detection voltage measurement location D70, such that the detection voltage measured at the detection voltage pad D40 and the detection voltage terminal D50 is approximately equal to the local battery potential at the detection voltage measurement location D70. Figure 1C This is a schematic example diagram of an electrochromic device E01 comprising two detection voltage pads D40 and E40, which are connected to substrates E11 and E12, respectively. The configuration of the detection voltage pads D40 and E40 can be similar to... Figure 1B The detection voltage pad D40 is similar, and the corresponding detection voltage measurement position (e.g.) Figure 1B D70 in the middle can be along position (x) s ,y sVertical alignment. For example, detection voltage pads D40 and E40 can be formed by scribing or etching conductive layers on substrates E11 and E12. The detection voltage measured between detection voltage pads D40 and E40 reflects the position (x-axis) between the conductive layers on substrate E11 and the conductive layers on substrate E12. s ,y s The local battery potential (or voltage drop) at point (x) can be detected by pads D40 and E40, and busbars E13 and E14. s ,y s The system measures the local battery potential at four terminals because it can be configured to allow no (or almost no) current to flow between the sense voltage pads D40 and E40. For example, a potential can be applied to busbars E13 and E14 to allow current to flow between them during switching, while the measurement circuitry (e.g., within the driver) can be configured to allow no (or almost no) current to flow between the sense voltage pads D40 and E40. Since the voltage detection pad D40 is close to bus bar E13, the voltage difference between the voltage detection pad D40 and bus bar E13 is small. Therefore, in this case, the voltage can also be measured at the position (x) between the voltage detection pad E40 and bus bar E13. s ,y s The detected voltage at (x) is obtained using this measurement method. However, the position (x) obtained using this method is... s ,y s The accuracy of the detection voltage at point (x) is lower than that measured using detection voltage pads D40 and E40. On the other hand, busbar E14 is far from detection voltage pad E40 (and position (x) s ,y s Therefore, it is impossible to use busbar E14 to measure the position (x) in electrochromic device E01. s ,y s The detection voltage at point (). although Figure 1B and Figure 1C The examples shown all use rectangular substrates, but in some embodiments, electrochromic devices D01 and E01 may use non-rectangular substrates. The sense voltage pad is particularly useful for non-rectangular substrates because the voltage drop across the device on a non-rectangular substrate can vary non-uniformly (or non-monotonicly). The resistance gradient of one or more conductive layers can be configured to form a region in the device where the maximum voltage drop occurs between non-rectangular conductive layers, and this region is roughly aligned with the sense voltage pad, thereby helping to prevent damage (or accelerated aging) to the device during switching due to overdriving of a particular region. In some embodiments, a device for the above-mentioned electrochromic device (e.g.) is provided Figure 1B D01 or Figure 1CAn electronic driver (E01 in the original text) includes a power supply and a power control module configured to perform the following operations: (using at least one busbar) supply a constant current from the power supply to the electrochromic device, and stop supplying the constant current when the detection voltage of the electrochromic device (measured using a detection voltage pad) reaches a detection voltage limit, or when the amount of charge transferred to the electrochromic device reaches a target charge. The above operation may include: controlling (using at least one busbar) a variable voltage or variable current applied from the power supply to the electrochromic device to maintain the detection voltage at or below the detection voltage limit when the amount of charge transferred to the electrochromic device is less than the target charge. In other cases, the application of the variable voltage or variable current may be stopped when a time limit is reached or the current drops below a predetermined threshold. As described above, the detection voltage can be used to measure the local battery potential (or voltage drop) near the detection voltage pad. In some embodiments, a device for the above-mentioned electrochromic device (e.g.) is provided Figure 1B D01 or Figure 1C An electronic driver (E01 in the original text) is included. The driver includes a voltage detection circuit configured to measure the detection voltage at the detection voltage terminals (one or both terminals being connected to one or more detection voltage pads) of the electrochromic device. The driver includes a reversible constant current source configured to supply a constant current to the electrochromic device (using a busbar) until the detection voltage reaches a detection voltage limit, or the amount of charge transferred to the electrochromic device reaches a target charge. The driver includes a reversible variable voltage source configured to apply a variable voltage to the electrochromic device to maintain the detection voltage at (or below) the detection voltage limit in response to the detection voltage reaching the detection voltage limit, until the amount of charge transferred to the electrochromic device reaches a target charge. In other cases, the application of the variable voltage or variable current may be stopped when a time limit is reached or the current drops below a predetermined threshold. As described above, the detection voltage can be used to measure the local cell potential (or voltage drop) near the detection voltage pads. In some embodiments, a method for controlling the above-mentioned electrochromic device (e.g.) is provided Figure 1B D01 or Figure 1CThe method (E01) in the above method includes: applying a constant supply current to an electrochromic device (using at least two busbars), and determining the amount of charge transferred to the electrochromic device as a function of time and the current supplied to the electrochromic device. The method further includes: stopping the application of the constant supply current in response to a detection voltage (measured using a detection voltage pad) reaching a detection voltage limit; and applying a variable voltage or variable current to the electrochromic device (using at least two busbars) in response to the detection voltage reaching the detection voltage limit to maintain the detection voltage at or below the detection voltage limit. The method may also include: terminating the application of the variable voltage or variable current to the electrochromic device in response to a determined amount of charge reaching a target amount of charge. In other cases, the application of the variable voltage or variable current may be stopped in response to reaching a time limit, reaching a current limit, or the current dropping below a predetermined threshold. As described above, the detection voltage can be used to measure the local battery potential (or voltage drop) near the detection voltage pad. At least one of the substrates 24 and 25 is preferably a transparent substrate so that the electrochromic properties of the stack 28 can be observed by the surrounding environment. Any material with suitable optical, electrical, thermal, and mechanical properties can be used as the first substrate 24 or the second substrate 25. Such substrates include, for example, glass, plastics, metals, and metallized glass or plastics. Non-exclusive examples of plastic substrates include polycarbonate, polyacrylate, polyurethane, urethane-carbonate copolymers, polysulfone, polyimide, polyacrylate, polyether, polyester, polyethylene, polyolefin, polyimide, polysulfide, polyvinyl acetate, and cellulose-based polymers. If a plastic substrate is used, it can be protected by a hard coating for barrier and abrasion resistance, such as diamond-like carbon protective coatings, silica / silicone abrasion-resistant coatings, etc., all of which are known in the field of plastic glass. Suitable glass includes transparent or colored soda-lime glass, including soda-lime float glass. The glass can be tempered or untempered. In some embodiments of the electrochromic device 1 that use glass (e.g., soda-lime glass) as the first substrate 24 and / or the second substrate 25, a sodium diffusion barrier layer (not shown) is provided between the first substrate 24 and the first conductive layer 22 and / or between the second substrate 25 and the second conductive layer 23 to prevent sodium ions in the glass from diffusing into the first conductive layer and / or the second conductive layer 23. In some embodiments, the second substrate 25 may be omitted. In some embodiments, both the first substrate 24 and the second substrate 25 are float glass. In embodiments for certain architectural applications, the glass is at least 0.5 m × 0.5 m in size, and can be larger, for example, about 3 m × 4 m. In such applications, the glass thickness is typically at least about 2 mm, and more commonly 4–6 mm. Unrestricted by application scenarios, the electrochromic device of this disclosure can have various sizes. Generally, it is preferred that the substrate of the electrochromic device has a surface area of ​​at least 0.01 square meters. For example, in some embodiments, the substrate of the electrochromic device has a surface area of ​​at least 0.1 square meters. Further, in some embodiments, the substrate of the electrochromic device has a surface area of ​​at least 1 square meter. Further, in some embodiments, the substrate of the electrochromic device has a surface area of ​​at least 5 square meters. Further, in some embodiments, the substrate of the electrochromic device has a surface area of ​​at least 10 square meters. At least one of the two conductive layers 22 and 23 is preferably a transparent conductive layer, so that the electrochromic properties of the stack 28 can be observed by the surrounding environment. In one embodiment, conductive layer 23 is a transparent layer. In another embodiment, conductive layer 22 is a transparent layer. In yet another embodiment, both conductive layers 22 and 23 are transparent layers. In some embodiments, one or both of the conductive layers 22 and 23 are inorganic layers and / or solid layers. Conductive layers 22 and 23 can be made of a variety of different transparent materials, including transparent conductive oxides, thin metal coatings, networks of conductive nanoparticles (e.g., conductive rods, tubes, or dots embedded in a conductive or insulating matrix), conductive metal nitrides, and composite conductors. Transparent conductive oxides include metal oxides and metal oxides doped with one or more metals. Examples of such metal oxides and doped metal oxides include indium oxide, indium tin oxide, indium-doped indium oxide, tin oxide, tin-doped tin oxide, zinc oxide, aluminum-doped zinc oxide, zinc oxide, ruthenium oxide, ruthenium oxide, etc. Transparent conductive oxides (TCOs) are sometimes also referred to as TCO layers. Substantially transparent thin metal coatings may also be used. Examples of metals used for this type of thin metal coating include gold, platinum, silver, aluminum, nickel, and their alloys. Examples of transparent conductive nitrides include titanium nitride, tantalum nitride, titanium oxynitride, and tantalum oxynitride. Conductive layers 22 and 23 can also be transparent composite conductors. Such composite conductors can be prepared by patterning highly conductive ceramic and metal wires or conductive layers on one surface of a substrate, followed by a cover coating with a transparent conductive material (e.g., doped tin oxide or indium tin oxide). Ideally, such wires should be thin enough to be invisible to the naked eye (e.g., about 100 micrometers or less). Non-exclusive examples of visible light transparent electronic conductors 22 and 23 are thin films of indium tin oxide (ITO), tin oxide, zinc oxide, titanium oxide, n-type or p-type doped zinc oxide, and zinc fluoride oxynitride. Metal-based layers (such as zinc sulfide / silver / zinc sulfide layers) and carbon nanotube layers have also recently been studied. Depending on the specific application, one or both of conductive layers 22 and 23 can be made of or contain a metal grid. In some cases, the transparent conductive layers 22 and / or 23 may include a network of conductive nanoparticles made of conductive rods, tubes, or dots embedded in a matrix composed of a conductive or insulating material (e.g., an insulating or conductive polymer, or an insulating or conductive solution-coated inorganic material). The thickness of the conductive layers can be influenced by the composition of the materials within the layers and their transparency properties. In some embodiments, conductive layers 22 and 23 are made of a substantially transparent material (e.g., TCO, or a network of conductive nanoparticles), and the thickness of each layer is between about 1000 nanometers and about 50 nanometers. In some embodiments, the thickness of conductive layers 22 and 23 is between about 500 nanometers and about 100 nanometers. In other embodiments, the thickness of each layer of conductive layers 22 and 23 is between about 400 nanometers and about 200 nanometers, or between about 300 nanometers and about 150 nanometers. Generally, thicker or thinner layers can be used, as long as they provide the required electrical properties (e.g., conductivity) and optical properties (e.g., transmittance). For certain applications, it is generally preferred to fabricate conductive layers 22 and 23 as thin as possible to improve transparency and reduce costs. Refer again Figure 1A The conductive layer serves to apply the potential supplied by the power source to the entire surface of the electrochromic stack 28 and conduct it to the internal regions of the stack. The potential is transmitted to the conductive layer through electrical connections. In some embodiments, busbars (one in contact with the first conductive layer 22 and one in contact with the second conductive layer 23) provide electrical connections between the voltage source and the conductive layers 22 and 23. The sheet resistance Rs (without gradient, e.g., the sheet resistance of a transparent conductive oxide with a constant thickness before patterning) of the first conductive layer 22 and the second conductive layer 23 may vary between about 500 Ω / □ and 1 Ω / □, or between about 100 Ω / □ and 5 Ω / □, or between about 50 Ω / □ and 5 Ω / □, or between about 25 Ω / □ and 5 Ω / □, or between about 20 Ω / □ and 5 Ω / □, or between about 10 Ω / □ and 5 Ω / □, or between about 30 Ω / □ and 10 Ω / □, or between about 20 Ω / □ and 10 Ω / □. The multilayer device disclosed herein may be rectangular or non-rectangular; it may have two or more busbars; the busbars may be located on opposite sides of the device, and / or may not be located on opposite sides. For example, the perimeter of the multilayer device may be a more common quadrilateral (e.g., trapezoid, right trapezoid, or rhombus), or a shape with more or fewer than four sides, such as a triangle, pentagon, hexagon, etc. Further, the perimeter of the multilayer device may be curved and without vertices, such as a circle, semicircle, ellipse, etc. In such non-rectangular devices, the two busbars may be parallel or non-parallel. Further, the multilayer device may include three, four, or more busbars for connecting the multilayer device to one or more power sources, or regardless of the number of busbars, they may be located on non-opposite sides. In each of the above cases, the preferred resistance distribution in the conductive layer may differ from the resistance distribution described in the rectangular dual-busbar configuration. In some examples, the substrate of the electrochromic device includes a conductive layer, and the substrate and conductive layer are substantially rectangular, with one or more electrical connections (e.g., busbars) applied to the conductive layer. Figure 2 An electrochromic device of this type is shown, having a substrate 2008, a conductive layer 2001 disposed on top of the substrate, and a busbar applied to an edge 2003. The resistance between the busbar and a substantially parallel straight line (shown as a dashed line in the figure) 2009 in the first conductive layer can be defined. In this disclosure, the resistance between the busbar and the substantially parallel straight line in the conductive layer is equivalent to the resistance obtained by measuring the resistance between the busbar and the test contact at an ohm test contact 2005 (with zero contact resistance) connected (or temporarily applied) along the straight line to the conductive layer. If the conductive layer is a uniform layer, the resistance between the busbar and the substantially parallel straight line increases linearly with the increase of the distance between the busbar and the parallel line, and can be expressed by the formula r=ρ The resistance is described by l / A, where r is the resistance between the busbar and a straight line that is substantially parallel to the conductive layer, ρ is the volume resistivity of the top conductive layer, l is the distance between the busbar and the straight line 2006, and A is the cross-sectional area of ​​the conductive layer 2007. Alternatively, if the resistivity of the conductive layer varies non-uniformly with position perpendicular to the busbar, the resistance between the busbar and a substantially parallel straight line will increase non-linearly with increasing distance between the busbar and the line. In some cases, the bulk resistivity of the conductive layer is non-uniform. In some cases, the cross-sectional area of ​​the conductive layer is non-uniform (e.g., the thickness varies with the substrate position). In some cases, the conductive layer can be patterned to make the resistance between the busbar and a substantially parallel straight line vary non-linearly, as described in more detail below. There are several ways to form a gradient in a transparent conductive layer. This gradient can be achieved using any technique that allows the resistance between the busbar and a straight line within the layer to change non-linearly, such as changing the sheet resistance of the conductive layer or patterning the conductive layer. The sheet resistance of the conductive layer can be changed by altering the layer thickness or the electrical properties of the conductive layer material. For example, the electrical properties of the conductive layer material can be changed by altering the resistivity of the thin film material (e.g., changing the material composition, dopant / impurity concentration, or crystallinity), the morphology of the nanostructured conductive layer (e.g., the spacing between conductive nanowires), or the electrical properties of the nanostructured conductive layer (e.g., the inter-line resistance of the nanowire mesh). The thickness gradient or electrical property gradient of the conductive layer can be a smoothly changing gradient or a discretely changing gradient. In some cases, discrete patterns can be formed on one or two conductive layers, causing the resistance between the busbar and a straight line within one or two conductive layers to change non-linearly. In some embodiments, the sheet resistance of one or more conductive layers can be changed, and discrete patterns can be formed on one or two conductive layers, causing the resistance between the busbar and a straight line within one or two conductive layers to change non-linearly. Electrochromic devices with a conductive layer resistance gradient are further described in U.S. Patents 8,717,658, 9,091,868, 9,091,895, 9,507,233, 10,386,688, and 11,187,955, the entire contents of which are incorporated herein by reference. As will be described in more detail below, the non-linear resistance between the busbar and a straight line on one or two conductive layers has advantages in electrochromic devices because it makes the local potential between the two conductive layers more uniform across the entire device region. Therefore, electrochromic devices can achieve better spatial uniformity of optical performance (e.g., transmittance) during switching. Electrochromic devices with resistance variations in one or more conductive layers can improve the uniformity of the switching process. Electrochromic devices with discrete patterns formed on one or two conductive layers can also improve the uniformity of the switching process. Similarly, electrochromic devices with resistance variations in one or more conductive layers and discrete patterns formed on one or two conductive layers can also improve the uniformity of the switching process. It can draw lines of equal resistance and resistance gradient lines to describe the non-uniform surface resistance of a conductive layer. Lines of equal resistance connect points where the surface resistance is equal, and resistance gradient lines are perpendicular to the lines of equal resistance. (See reference...) Figure 1A Generally, regardless of whether the multilayer device is non-rectangular, has two or more electrical connections (e.g., busbars), and / or whether the electrical connections (e.g., busbars) are located on opposite sides of the device, the sheet resistance Rs of the first conductive layer 22, the second conductive layer 23, or both the first conductive layer 22 and the second conductive layer 23 can be plotted to obtain a curve (i.e., an isoresistivity line) connecting points with equal resistance in the first and / or second conductive layers (two-dimensional positions). This type of general-purpose curve (sometimes called a contour plot) is commonly used in cartography to connect points with equal elevation. In this disclosure, the contour plot of the sheet resistance Rs in the first and / or second conductive layers as a function of their internal positions (two-dimensional positions) preferably includes a series of isoresistivity lines (sometimes also called contour lines) and resistance gradient lines (lines perpendicular to the isoresistivity lines). The sheet resistance along the gradient lines in the first and / or second conductive layers can be a constant value, or generally increase, or generally decrease, or generally increase to a maximum value and then decrease, or generally decrease to a minimum value and then increase. Figure 3A and Figure 3B An example of an electrochromic device and a corresponding example of a resistance gradient in the conductive layer of the device are shown. Figure 3A For schematic purposes, a top conductive layer 2001, a bottom conductive layer 2002, a busbar 2003 that forms contact with the top conductive layer at x=0, and a section at x=x are shown. t Busbar 2004 that forms contact with the bottom conductive layer. Figure 3BOne embodiment includes a graph, illustrating Figure 3A The surface resistance R(x) of the top conductive layer 2001 varies with position (x), and Figure 3A The surface resistance R'(x) of the bottom conductive layer 2002 varies with position (x). Unrestricted by any specific theory and based on the specific experimental evidence obtained to date, by changing the sheet resistance of the two conductive layers of the device, the local potential (i.e., voltage) between the conductive layers in an electrochromic stack can be kept essentially constant as a function of position. This local potential between the conductive layers can also be called the local device potential or the local cell potential. A specific relationship exists between the sheet resistances of the first and second conductive layers, which allows a essentially uniform local cell potential to be formed throughout the entire region of the electrochromic device. Figure 3A The geometry shown has a top conductive layer 2001 and a bottom conductive layer 2002, both of which are rectangular. A contact (busbar 2003) is formed with the top conductive layer at x=0. At x=x... t The contact formed at the bottom conductive layer (busbar 2004) provides a basically uniform local battery potential, and the relationship is as follows: R'(x) = R(x) (x t / x - 1) Where R(x) is the surface resistance of the top conductive layer as a function of position, and R'(x) is the surface resistance of the bottom conductive layer as a function of position, and for a given value of x, the surface resistances of the top and bottom conductive layers are essentially constant in the y-direction. In this embodiment, for both the top and bottom conductive layers, the resistance gradient lines are oriented approximately along the x-direction, and the isostatic lines are oriented approximately along the y-direction. In this embodiment, as... Figure 3A The geometric structure shown has a top and bottom conductive layer that are essentially parallel. A point (x1, y1, z1) on the bottom conductive layer can be projected onto a point (x1, y1, z2) on the top conductive layer, as shown in the figure. An example solution for the surface resistance distribution that satisfies this relationship is: the surface resistance of the top electrode changes linearly, i.e., R(x) = a x, the surface resistance of the bottom electrode R'(x) = a (x t -x), where for a given value of x, the sheet resistance of the top and bottom conductive layers is substantially constant in the y-direction. Another example solution is R(x) = 1 / [a (x t -x)],R'(x)=1 / (a x), where for a given value of x, the surface resistance of the top and bottom conductive layers is substantially constant in the y direction. r(x) is defined as the resistance between busbar 2003 and a straight line 2009 parallel to the busbar in the top conductive layer, where the straight line 2009 is located at position x (position x1 is shown in the figure). r'(x) is defined as the resistance between busbar 2004 and a straight line 2010 parallel to the busbar in the bottom conductive layer, where the straight line 2010 is located at position x (position x1 is shown in the figure). The equation describing r(x) is the integral of the surface resistance R(x) of the top conductive layer divided by the width W of the top conductive layer: r(x) = [R(x) / W]dx, The integration interval is from x=0 to x=x. The equation describing r'(x) is the integral of the surface resistance R'(x) of the bottom conductive layer divided by the width W of the bottom conductive layer: r'(x) = [R'(x) / W]dx, The integration interval is from x=x to x=x t . In practice, the devices do not need to strictly adhere to these relationships to achieve the beneficial effects described in this disclosure. For example, in the above R'(x)=1 / (a In the case of x), R'(0) is infinite. Although it is possible to form an extremely large resistance in practice, it has R'(x) = 1 / (a Thin films with x+b) (where b is smaller than a) can significantly improve switching uniformity compared to devices with uniform surface resistive electrodes. In rectangular electrochromic devices, the resistance between a busbar and a straight line parallel to the busbar in the conductive layer can be altered by using a pattern in the conductive layer. In this case, the pattern specifications can be determined using the aforementioned relationship to improve the uniformity of the local cell potential across the entire device area. The aforementioned integral (used to determine the resistance between the busbar and a straight line parallel to the busbar in the conductive layer under a given desired surface resistance distribution) can be solved in different intervals, and the results can be used to determine the pattern required to change the resistance along the gradient line. The improved uniformity of the local cell potential will enable the electrochromic device to achieve more uniform switching. For example, Figure 4 A schematic diagram of a patterned conductive layer 301 is shown. This conductive layer is made of a transparent conductive material, and a plurality of etched lines 302 are formed in the material. The geometric parameters of the pattern are selected so that the desired resistance distribution can be formed according to the above relationship, thereby improving the uniformity of the potential (i.e., local cell potential) between the conductive layers of the electrochromic stack. Figure 4The dark areas within the magnified region represent linear patterns indicating gaps in the conductive layer. For example, the conductive layer can be a transparent conductive material (such as indium tin oxide, fluorine-doped tin oxide, or aluminum-doped zinc oxide, etc.), and the dark lines in the pattern represent areas where the transparent conductive material has been removed. In some cases, the pattern of gaps in the conductive material is formed by laser ablation. In others, the pattern is formed by chemical etching using a mask (such as a mask formed by photolithography). In some cases, the gaps extend through the entire thickness of the conductive material. In still others, the gaps are formed using patterned masks (such as shadow masks used in physical vapor deposition) during selective deposition of the conductive layer. When the conductive layer is composed of a transparent conductive material, the surface resistivity of the transparent conductive material is defined as R. TC (x). In some cases (such as when the transparent conductive material is a transparent conductive oxide with uniform thickness), R TC (x) can be a constant value. However, in some cases (such as when the transparent conductive material is a transparent conductive oxide with varying thickness), R TC (x) varies with position. exist Figure 4 In the example shown, each scribe line group 302 contains multiple scribe lines. Each scribe line consists of a series of collinear segments 303, which are gaps in the conductive layer. The length, period 305, valve width 306, and offset 308 between segments in adjacent scribe lines determine the resistance experienced by an electron as it passes through a scribe line group along the x-direction. Figure 4 The conductive layer is shown to have an N-line group 302. In this example, the busbar 3011 is located at x=0 (i.e., located on a conductive layer, such as...). Figure 1A 27 and Figure 3A (in 2003), or located at x=x t Location (i.e., located on the opposite conductive layer, such as...) Figure 1A 26 and Figure 3A (2004 in the text). Generally, the x-position of each scribe group is represented as [x1, x2, x3, …x n-1 , x n , x n+1 ,…, x n-1 , x n ]. exist Figure 4 In the rectangular electrochromic device shown, the scribe line group x nThis can correspond to scribe lines in the top or bottom conductive layer. The resistance through a set of scribe lines (e.g., along a direction perpendicular to the width) can be defined with reference to the resistance between a busbar and a straight line in the conductive layer. In this case, two straight lines can be defined, one on each side of the set of scribe lines, where these lines are parallel to the set of scribe lines and parallel to the edge of the substrate, and both have a length equal to W. The resistance between the two straight lines is typically equal to the sum of the resistance generated by the surface resistance of the transparent conductive layer material and the added resistance of the set of scribe lines. n Defined as the added resistance of this set of etched lines. In other words, if the two test contacts are connected to the conductive layer along two straight lines on both sides of this set of etched lines, the measured resistance is equal to the resistance of the conductive layer (approximately equal to ρ). l / A, where ρ is the volume resistivity of the conductive layer, l is the distance between the test contacts, and A is W. t, where t is the thickness of the conductive layer) and r n The sum of the resistances generated by the engraved patterns. exist Figure 4 In the rectangular electrochromic device shown, given a desired surface resistance R(x) in the top conductive layer, and with the busbar in the top conductive layer located at x=0, the parameters of line segments (303, 304, 305, 306, and 308) are chosen such that electrons pass through the scribed line group x in the top conductive layer along the x-direction. n The resistance r at that time n , equals the integral value: r n = {[R(x)–R TC (x)] / W}dx, The integration interval is [x n-1 ,x n It can also be in the interval [x]. n ,x n+1 Solve the integral within the given space to obtain r. n Similarly, for a given desired surface resistance R'(x) in the bottom conductive layer, and the busbar of the bottom conductive layer is located at x=x t At this point, select the parameters of line segments (303, 304, 305, 306, and 308) so that electrons pass through the etched line group x in the bottom conductive layer along the x-direction. n The resistance r' at that time n , equals the integral value: r' n = {[R'(x)–R TC (x)] / W}dx, The integration interval is [x n+1 ,x n It can also be in the interval [x]. n ,x n-1Solve the integral within the given space to obtain r'. n . It should be noted that in some cases, the scribe line groups on the top conductive layer do not need to coincide with the scribe line groups on the bottom conductive layer. In this case, the position of the scribe line group in the top conductive layer is x. n The position of the scribed line group in the bottom conductive layer is x' n The rest of the above relationships remain unchanged. In any case, the relative distances of each scribe line group to the busbars on each layer may be the same or different. In order for the surface resistance to approximately satisfy the relationship between R(x) and R'(x) mentioned above, the resistance of different groups of rubbings to the flow of electrons along the x-direction needs to be different. Therefore, the parameters of the line segments (such as 303, 304, 305, 306 and / or 308) need to vary between different groups of rubbings. Figure 5 An example is shown where each etch group contains two etch lines. In this example, the period 305, valve width 306, and offset 308 between segments in adjacent etch lines represent the values ​​for each etch group x. n All remain constant. However, the lengths of the scribe lines 304a, 304b, and 304c differ between the scribe lines in different groups. Therefore, the resistance experienced by an electron when passing through the scribe lines in the x-direction varies depending on the group. Generally speaking, the total resistance between the busbar and the straight line in the conductive layer is equal to the sum of the resistance of the pattern feature (such as the scribing group in the example above) and the resistance of the transparent conductive material itself. The resistance contribution of the pattern feature (i.e., r) n The resistance contribution of the pattern feature varies non-linearly with the substrate length and is related to non-uniform electrical properties. The contribution of the pattern feature to the resistance per unit width of the device can be approximately 0 to approximately 30 ohm-cm, approximately 0 to approximately 300 ohm-cm, approximately 0 to approximately 500 ohm-cm, approximately 0 to approximately 750 ohm-cm, approximately 0 to approximately 1000 ohm-cm, approximately 0 to approximately 3000 ohm-cm, and approximately 0 to approximately 10000 ohm-cm. In other words, for a substrate with a width of 100 cm, the resistance contribution of the pattern feature (i.e., r) is... n The values ​​can be approximately 0 to approximately 0.3 ohms, approximately 0 to approximately 3 ohms, approximately 0 to approximately 5 ohms, approximately 0 to approximately 7.5 ohms, approximately 0 to approximately 10 ohms, approximately 0 to approximately 30 ohms, or approximately 0 to approximately 100 ohms. The resistivity contribution per unit width of a transparent conductive material to a device can be approximately 0 to 100 ohm-cm, approximately 0 to 300 ohm-cm, approximately 0 to 600 ohm-cm, approximately 0 to 1200 ohm-cm, approximately 0 to 1500 ohm-cm, approximately 0 to 1800 ohm-cm, approximately 0 to 2400 ohm-cm, approximately 0 to 3600 ohm-cm, approximately 0 to 4800 ohm-cm, or approximately 0 to 12000 ohm-cm. The resistivity contribution per unit width of the transparent conductive material is determined by its distance from the busbar, the material thickness, and the surface resistivity of the material. The size of the patterned features determines the resistance contribution of the patterned lines. The length of the scribe line (e.g., ...) Figure 4 The 304 in the text can be about 0.1 mm to about 100 mm, about 0.1 mm to about 20 mm, about 0.1 mm to about 10 mm, about 1 mm to about 10 mm, about 1 mm to about 20 mm, about 1 mm to about 100 mm, about 5 mm to about 10 mm, about 5 mm to about 15 mm, about 5 mm to about 20 mm, about 5 mm to about 25 mm, or about 5 mm to about 30 mm. The period (e.g.) Figure 4 (305) can be approximately 2 mm to approximately 10 mm, approximately 2 mm to approximately 20 mm, approximately 2 mm to approximately 100 mm, approximately 5 mm to approximately 10 mm, approximately 5 mm to approximately 15 mm, approximately 5 mm to approximately 20 mm, approximately 5 mm to approximately 25 mm, or approximately 5 mm to approximately 30 mm. The gap between scribing segments within a scribing line (e.g.) Figure 4 The difference between 305 and 304 can be approximately 0.5 mm, approximately 0.1 to approximately 100 mm, approximately 0.5 to approximately 200 mm, approximately 0.1 to approximately 50 mm, approximately 0.1 to approximately 20 mm, approximately 0.1 to approximately 10 mm, approximately 0.1 to approximately 5 mm, approximately 0.1 to approximately 1 mm, approximately 0.1 to approximately 0.5 mm, approximately 0.2 to approximately 0.8 mm, or approximately 0.4 to approximately 0.6 mm. Valve width (e.g.) Figure 4 The 306 in the figure can be about 10 to about 1000 micrometers, about 10 to about 500 micrometers, about 10 to about 200 micrometers, about 50 to about 500 micrometers, about 50 to about 400 micrometers, or about 50 to about 300 micrometers. For a basic rectangular conductive layer of transparent conductive material with constant thickness and constant resistivity and no pattern, the resistance between the busbar and a straight line parallel to the busbar is r. linear (x) (where the confluence strip is located at x=0, and the parallel line is located at position x). r linear (x) increases linearly with increasing x. For Figure 4 The patterned conductive layer shown has a geometric structure made of a transparent conductive material with constant thickness and constant resistivity and has several etched line patterns. The resistance between the busbar and the straight line parallel to the busbar is r. pattern(x) (where the confluence strip is located at x=0, and the parallel line is located at position x). r pattern (x) and r linear (x) are equal, and are approximately at the x position of each scribe group (as mentioned above). n At point (r), the resistance will exhibit an approximately step-like increase (equal to the aforementioned r). n ). Figure 6 The above simple rectangular geometry shows r linear (x) and r pattern (x) is an example of how position x changes. Figure 6 The diagram also shows a reference r(x), which is the resistance between the busbar and a straight line parallel to the busbar in the conductive layer, calculated from a smoothly varying sheet resistance (such as R(x)). In some cases, the resistance is determined by solving r... n The selected intervals differ, r pattern (x) is similar to r(x) in the vicinity of each scribe group or in the region between scribe groups. In some cases, based on the solution of r... n Depending on the selected interval, for a given x position, r pattern r(x) is always higher or always lower than r(x). The resistance between the busbar and the (x,y) positions of each adjacent scribe group, as well as the (x,y) positions between scribes within a given group, is not only a function of x, but may also be related to y. Figure 7 A simulated potential distribution of an exemplary patterned conductive layer is shown. The substrate in this example is approximately 800 cm long (in the x-direction) and 1300 cm wide (W = 1300 cm, in the y-direction). This example features approximately 16 scribe line groups; for simplicity, all scribe line groups have identical pattern feature sizes. The graph covering the entire device substrate 3100 shows that, in some cases, for a given x value, the potential is approximately constant in the y-direction. The potential of graph 3100 is represented by color scales as the potential difference between the busbar (located at x ≈ 0 m in this example) and a position (x, y) on the substrate, with an applied current per unit width of approximately 1 amp-meter (applied between the busbar at x = 0 and the second busbar at x ≈ 800 cm), and the potential difference varies between approximately 0 mV and approximately 400 mV. The enlarged graph 3110 shows that, in some cases, a potential gradient exists in the y-direction at locations immediately adjacent to each scribe group. The potential in graph 3110 is represented by color codes and is the potential difference between the busbar (located at x≈0 m in this example) and the (x,y) location on the substrate, with an applied current per unit width of approximately 1 amp-meter (applied between the busbar at x=0 and the second busbar at x≈0.38 cm). The potential difference varies from 0 mV to approximately 120 mV. Note that to shorten computation time, the distances between scribe groups in graph 3110 are smaller than those in graph 3100, but the overall characteristics and conclusions remain valid. The enlarged graph 3110 shows that the maximum gradient in the y-direction occurs between the scribe lines within a scribe group. In some cases, the regions with significant gradients in the y-direction are small, so these gradients can be ignored, simplifying the analysis to consider only the gradient in the x-direction (as shown in the graph of the entire device substrate 3100). However, those skilled in the art should understand that all the concepts described herein also apply to devices with significant potential gradients in both the x and y directions (e.g., devices with nonlinear scribe lines, devices with nonrectangular substrates, devices with extremely close scribe line spacing, devices with slight spatial inhomogeneities in the thickness of the conductive layer, devices with slight spatial inhomogeneities in the electrical properties of the conductive layer, etc.). In some embodiments, the scribe line groups can be carefully designed to minimize the potential gradient in the y-direction. For Figure 4 The etched pattern shown can be adjusted by one or more ratios between the line segment length, period, valve width, and pitch to minimize the potential gradient in the y-direction. In some embodiments, the potential gradient in the y-direction can be controlled by changing the scribe pattern, thereby forming a visually perceptible pattern (i.e., there is a difference in transmittance at different locations of the device) during the process of the device switching from a higher transmittance state to a lower transmittance state or from a lower transmittance state to a higher transmittance state. When the resistance gradient in the conductive layer of a device is formed by a scribed pattern, this resistance gradient can approximate a smoothly varying resistance distribution, and the local cell potential on the device may exhibit certain variations. The local cell potential distribution on the device can be adjusted by changing the specific dimensions of the scribed pattern. Since the local cell potential is the potential difference between the top and bottom conductive layers, the alignment of the scribed patterns between the top and bottom conductive layers also affects the local cell potential. Furthermore, because the magnitude of the local cell potential affects the switching speed of the device, the alignment of the scribed patterns between the top and bottom conductive layers can be adjusted to create a visually perceptible pattern during device switching. Refer again Figure 4In some embodiments, the length, period, period, valve width, and offset 308 of the collinear segment 304 that determines the resistance experienced by electrons as they pass through a set of scribe lines in the x-direction can vary along the y-direction of the set of scribe lines. By changing the resistance of each set of scribe lines to the flow of electrons in the x-direction along the y-direction, the local battery potential in the y-direction can be made non-uniform. The magnitude of the local battery potential affects the switching speed of the device; therefore, changing the scribe line size of a set of scribe lines in the y-direction can create a visually perceptible pattern during device switching. Similarly, changing the resistance of each set of scribe lines to the flow of electrons in the x-direction along the x-direction can create a non-uniform local battery potential in the x-direction and form a visually perceptible pattern during device switching. Likewise, changing the resistance of each set of scribe lines to the flow of electrons in the x-direction along both the x and y directions can create non-uniform local battery potentials in both the x and y directions and form a visually perceptible pattern during device switching. Figure 8 Another aspect of the scribed pattern is shown, which creates a potential gradient in the x and / or y directions, resulting in a visually perceptible pattern (i.e., differences in transmittance at different locations) as the device switches from a higher transmittance state to a lower transmittance state or vice versa. The period offset 309 affects the transmittance uniformity at different locations of the device. In some embodiments, the potential gradient in the x and / or y directions is smaller as the period offset approaches zero; and larger as the period offset approaches half of period 305. Therefore, in some embodiments, transmittance is more uniform during device switching as the period offset approaches zero; and less uniform as the period offset approaches half of period 305. The etched patterns on the top and bottom conductive layers interact to form visually perceptible patterns during device switching, and these patterns may vary within the device region. These patterns are formed by differences in transmittance between different points. These transmittance differences may be larger in one region of the device and smaller in another. For example, regions of the device farther from the busbars may have greater transmittance differences and more pronounced patterns than regions closer to the busbars. Refer again Figure 4 In some embodiments, the visually perceptible pattern during device switching is more pronounced in areas where the etched segments do not overlap within the etched group. If the length 304 of the etched segment is greater than approximately half the length of the period 305, then the etched segments can be considered to overlap within the etched group. In some embodiments, the magnitude of the local battery potential affecting the device switching speed can be adjusted along the y-direction and / or x-direction of each scribe group by changing the scribe size (i.e., the length of the collinear segment 304, the period 305, the valve width 306, the offset 308 or the period offset 309 between segments in adjacent scribes) of each scribe group in the top conductive layer, bottom conductive layer, or top and bottom conductive layers. By varying the resistance of each scribe line group along the x-direction and / or y-direction, and / or altering the alignment of the scribe line groups between the top and bottom conductive layers, a variety of different patterns can be formed during device switching. Examples of patterns that can be formed during device switching include checkerboard patterns (i.e., squares or rectangles with high / low transmittance), honeycomb patterns (i.e., hexagons or other polygons with high / low transmittance), vertical stripes, horizontal stripes, concentric rings, and other non-repeating patterns (e.g., company logos, text, or other shapes distributed within the device area). In some embodiments, these patterns are visible during device switching but are invisible or nearly invisible when the device is not switching. This type of pattern is implemented to alter the resistance distribution within the conductive layer. Δr p-l (x) represents the resistance distribution r of the patterned conductive layer. pattern (x) and the resistance distribution r of a linear, uniform, transparent conductive material linear The difference between (x). Another way to compare the resistance of a uniform conductive layer and a patterned conductive layer is by ratio. For all values ​​of x, the ratio Φ(x) = r pattern (x) / r linear (x) is usually a value greater than or equal to 1. In some cases, the resistance difference Δr p-l (x) increases with increasing distance from the busbar, and the resistance ratio Φ(x) = r pattern (x) / r linear (x) will also increase as the distance from the busbar increases. Figure 6 r shows the conductive layer of a uniform transparent conductive material linear (x) Example, and r of a patterned conductive layer with uniform transparent conductive material and pattern. pattern (x) Example. Figure 6 The resistance r(x) generated by the smoothly varying surface resistance (as described above) is also shown. Figure 6 The illustration shows the geometry of the patterned conductive layer 3501 in this example. Busbar 3511 on the conductive layer is located at x=0, with a substrate length of 1.3 meters and a width of 0.8 meters. The distance between pattern features 3507 (e.g., the pitch between scribe groups) is 0.1 meters. The pattern chosen in this example is intended to approximate a hyperbolic distribution of surface resistivity with increasing distance from the busbar (e.g., the length of the scribe segment in the scribe group near x=0 is different from that near x=x).t The lengths of the scribe lines in the scribe line group at each location are different. Due to the discrete nature of the pattern, r pattern (x) due to each pattern feature r n The resistance increases approximately in a step-like manner due to the change in resistance. At a specific x=x At the value, the resistance r of the patterned conductive layer pattern (x) and the resistance r of the linear, uniform, transparent conductive material linear The difference between (x) is in Figure 6 The expression is represented as Δr p-l (x ). Because r in this example n The resistance is approximately hyperbolic, Δr p-l (x) increases with increasing distance from the busbar. Since r in this example... n The resistance characteristics, the ratio Φ(x) = r pattern (x) / r linear (x) will also increase as the distance from the busbar increases. like Figure 6 As shown, r pattern r(x) is an approximation of r(x). In some embodiments, a smaller pitch will reduce r. pattern The difference between r(x) and r(x). However, as mentioned earlier, compared to devices with a conductive layer having constant surface resistance, the resistance distribution does not need to strictly follow R'(x) = R(x). (x t A better switching uniformity can be achieved with a / x-1) relationship. Discrete patterns (e.g., scribing groups) are easy to manufacture, for example, by using scanning lasers to ablate conductive materials. The high speed and low cost of this process are also advantageous for mass production. Patterns formed by scanning laser ablation are also easy to modify for devices of different sizes, and this additional flexibility is an advantage for the production of electrochromic windows and rearview mirrors, which often require manufacturing in multiple sizes. In some cases, a larger pitch can be selected to reduce the number of scribings and improve manufacturability. In other cases, the pitch is adjusted to use the minimum number of scribings in the manufacturing process while making r pattern The difference between r(x) and r(x) reaches an acceptable level. For example, the pitch can be 1 mm to 10 mm, or 2.5 mm or 5 mm. For a conductive layer with constant resistivity (e.g., a conductive layer with a uniform transparent conductive material and no pattern), the resistance between a busbar and a straight line parallel to the busbar is linearly related to the distance between the busbar and the straight line (as described above). In this case, a fixed length interval (Δx) between the busbar and the parallel line can be defined. In this case, the resistance change Δr(x) within any interval Δx is a constant value. For a conductive layer with variable resistance (e.g., a conductive layer with a patterned transparent conductive material), the resistance change Δr(x) within the fixed length interval Δx is not a constant value. Figure 9 As shown, for a uniform conductive layer, the resistance change Δr within a fixed interval Δx is constant at all x values; for a fabricated variable conductive layer, Δr within a fixed interval Δx varies with position (x). Figure 4 and Figure 5 The diagram shows that each set of 302 contains two gradations. Each set of gradations may contain two, three, four, five, or more gradations. The number of gradations in each set of gradations may also vary. In some cases, the spacing (i.e., pitch) 307 between sets of gradations may be a constant or a variable value. Non-uniform thickness The thickness and / or bulk resistivity of the conductive layer can also be constant or variable. In this case, the relationship between the bulk resistivity and thickness of the top and bottom conductive layers is as follows: (Lx) ρ(x) / t f (x) = x ρ'(x) / t f '(x), Where x=0 represents the position of the busbar on the top conductive layer, x=L represents the position of the busbar on the bottom conductive layer, ρ(x) represents the volume resistivity of the top conductive layer, ρ'(x) represents the volume resistivity of the bottom conductive layer, and t f (x) represents the thickness of the transparent conductive material in the top conductive layer, t f ρ'(x) represents the thickness of the transparent conductive material in the bottom conductive layer. In this case, ρ(x), ρ'(x), and t f (x) and t f '(x) all change with position. in this case, Figure 3A The resistance between the busbar 2003 of the top conductive layer 2001 and the straight line 2009 at position x is the integral: r(x) = [(ρ(x) / t f (x)) / W]dx, The integration interval is from x=0 to x=x. Figure 3AThe resistance between the busbar 2004 of the bottom conductive layer 2002 and the straight line 2010 at position x is the integral: r'(x) = [(ρ'(x) / t f '(x)) / W]dx, The integration interval is x=x t Until x = x. Non-rectangular base The relationships described above for calculating the resistance of rectangular geometries can be extended to calculate the resistance of non-rectangular geometries. For any smoothly varying electrode surface resistance distribution and any substrate geometry and contact configuration, the surface resistance of the top and bottom conductive layers can be summarized by the following relationship: along a gradient curve perpendicular to the isoresistivity line, the surface resistance R(g) from one contact point (g=0) to another contact point (g=L) satisfies R'(g) = R(g) with the corresponding counter electrode surface resistance distribution R'(g). (L / g-1). In this case, the resistance between the busbar and the straight line at position 'g' (approximately along the isoresistivity line) is obtained by integrating the surface resistance by the dimension along that straight line (approximately along the isoresistivity line) over the interval from the busbar to the position of the straight line along the resistance gradient line (perpendicular to the isoresistivity line). In this type of embodiment, relationships similar to those described for the simple rectangular geometry can be derived to define how the conductive layer is patterned so that the resistance distribution approximates the resistance distribution of a conductive layer with a smoothly varying surface resistance. The advantage of following these relationships is that electrochromic devices with more uniform local cell potentials can be obtained, which also exhibit more uniform optical properties (e.g., transmittance) during switching. Figures 10A to 10E A series of contour plots of sheet resistance Rs are shown, illustrating the sheet resistance of the conductive layer (i.e., the first conductive layer, the second conductive layer, or both the first and second conductive layers) as a function of position (two-dimensional) within the conductive layer in several example embodiments of an electrochromic stack according to some embodiments. Figure 10E An example of a non-rectangular base is shown. Figure 10E Busbars 26 and 27 are located on either side of the circular base. In this case, it can be connected via... Figure 11A The multiple scribe lines 3202 shown form a resistance gradient along the isoelectric line. In this example, the scribe lines are at different angles, following the contour of the isoelectric line. The dimensions and other parameters of the line segments in the scribe line group are selected to form a resistance gradient according to the above relationship, thereby obtaining a more uniform local cell potential. A more uniform local cell potential will enable the electrochromic device to achieve more uniform switching. Can form Figure 10E Another example of a set of rubbings depicting the substrate resistance gradient is... Figure 11BThe scribe line group 3202 shown is along the isoelectric line. In this example, the scribe lines are all parallel to each other, but by using more than two scribe lines per scribe line group on a given isoelectric line, the contour of the isoelectric line is followed. Similarly, the dimensions and other parameters of the line segments in the scribe line group are selected to form a resistance gradient according to the above relationship, thereby obtaining a more uniform local cell potential, which will enable the electrochromic device to achieve more uniform switching. Figure 10E An example of a non-rectangular base is shown. Figure 10E Busbars 26 and 27 are located on either side of the circular base. In this case, it can be connected via... Figure 11C The scribe line group 3202 shown forms a resistance gradient. In this example, the scribe lines are parallel to each other (i.e., they do not follow the isostatic line 3205), but the desired resistance gradient is formed by varying the lengths of the scribe segments within the scribe line group (e.g., 3204a, 3204b, and 3204c). By selecting the dimensions of the segments and other parameters in the scribe line group to form a resistance gradient according to the above relationships, a more uniform local cell potential is obtained. A more uniform local cell potential will enable the electrochromic device to achieve more uniform switching. Figure 11D An example of a non-rectangular (right-angled trapezoidal) electrochromic device with scribe lines is shown, which are used to form a resistance gradient (or surface resistance gradient) in a conductive layer. In this example, busbars 1101 and 1102 are referred to as irregular busbars due to their non-parallelism. The scribe line group in this example forms a resistance gradient (or surface resistance gradient) in the conductive layer by varying the angle 1105 and the lengths 1115 and 1125. In other examples, other features of the scribe line geometry may be combined with the angle 1105 to form a resistance gradient (or surface resistance gradient) in a conductive layer with a non-rectangular substrate (and / or irregular busbars). exist Figures 10A to 10E In each of the figures, contour plot 50 shows a set of surface resistivity curves 52 (i.e., surface resistivity R). s A constant resistance curve) and a set of resistance gradient curves 54, which are perpendicular to the isoresistivity curve 52, and are composed of square ( Figure 10A , 10B and 10C) or round ( Figure 10D and 10E The electrochromic stack surrounding the electrochromic stack, and busbars 26 and 27 of varying numbers and locations in contact with the first and second conductive layers (unmarked) of the electrochromic stack, are formed. Figure 10A In the diagram, the direction of gradient group 54 indicates that within the conductive layer in contact with busbar 27, the surface resistance R... s It gradually increases along the direction of gradient group 54, and between the west side 55 and the east side 56 of the conductive layer. Figure 10B In the diagram, the direction of gradient 54A indicates that within the conductive layer in contact with busbar 27, the surface resistance R...s The diameter gradually decreases from the southwest corner 57 to the centroid 59, and then gradually decreases from the centroid 59 to the northeast corner 58. Figure 10C In the diagram, the direction of gradient group 54 indicates that within the conductive layer in contact with busbar 27, the surface resistance R... s The surface resistance R gradually decreases from the west side 60 and the east side 61 to the centroid 59, and gradually increases from the top side 58 and the bottom side 57 to the centroid 59; in other words, the surface resistance R s A saddle-shaped distribution is formed with centroid 59 as the center. Figure 10D In the diagram, the directions of gradients 54a and 54b indicate that within the conductive layer in contact with busbar 27, the surface resistance R... s The surface resistance R gradually decreases from each of positions 64 and 65 to centroid 59, and gradually increases from each of positions 63 and 62 to centroid 59; in other words, the surface resistance R s A saddle-shaped distribution is formed with centroid 59 as the center. Figure 10E In the diagram, the direction of gradient group 54 indicates that within the conductive layer in contact with busbar 27, the surface resistance R... s It gradually decreases from 55 on the west side to 56 on the east side. Figures 10A to 10E as well as Figure 11D The possible locations of the detection voltage pad D40 in these electrochromic devices with irregular busbars (e.g., L-shaped busbars) or non-rectangular substrates are also shown (e.g. Figure 1B and Figure 1C (As shown). The detection voltage pad D40 can be aligned with another detection voltage pad (e.g., as shown). Figure 1C (As shown, aligned along the z-direction). In some embodiments, the surface resistance distribution (represented by a contour plot containing isostatic lines and gradient lines / curves) can be configured (or optimized, tuned, or designed) to be within the device (i.e., as shown). Figure 1C A region of maximum voltage drop (i.e., the region of maximum local cell potential) is formed between opposing conductive layers, wherein this maximum voltage region 1010 is substantially aligned with the detection voltage pad D40. In some embodiments, region 1010 is a region that includes both the detection voltage pad and the maximum local cell potential. In other embodiments, the detection voltage pad D40 may be located at... Figures 10A to 10E as well as Figure 11D Other locations within the effective area of ​​the electrochromic device. For example, the detection voltage pad (e.g., D40) may be located near the busbar or near the end of the busbar. Generally, the detection voltage pad can be located anywhere within the effective area where electrical contact can be formed with the detection voltage pad (e.g., along an edge that does not coincide with the busbar). When the detection voltage pad is formed by scribing a conductive layer (e.g., TCO material), it may be more advantageous to place the detection voltage pad near the edge of the device. For example, Figures 10A to 10EThe sheet resistance gradient of the conductive layer in the illustrated device can be formed through patterning (e.g., using laser etching or chemical etching), thickness variation, electrical property variation, or nanostructure concentration variation (e.g., particles or wires embedded in a conductive or insulating matrix), as described below. For example, Figure 5 and / or Figures 11A to 11C The etched patterns can be used to change the surface resistance of the conductive layer (or change the resistance of electrons flowing parallel to the main surface of the layer), so as to form a high voltage drop (or high local cell potential) region near the location of the detection voltage pad. Generally, circuit modeling can be used to determine the sheet resistance distribution that provides the desired switching performance, taking into account the type, shape and size of the electrochromic device, electrode characteristics, and the arrangement of electrical connections (e.g., busbars) to the voltage source. Furthermore, the resistance distribution approximating the desired sheet resistance distribution can be controlled at least in part by patterning the first and / or second conductive layers, and optionally by gradienting the thickness of the first and / or second conductive layers, gradienting the composition of the first and / or second conductive layers, or a combination of the above. Variations of the first and second conductive layers In some examples, to facilitate faster and / or more uniform switching (and vice versa) of the electrochromic device 1 from a relatively higher transmittance state to a relatively lower transmittance state, at least one of the conductive layers 22 and 23 has a patterned layer. Further, one of the first conductive layer 22 and the second conductive layer 23 may be a patterned layer, and the other may be a layer having a gradient thickness or gradient composition as described above. Alternatively, both the first conductive layer 22 and the second conductive layer 23 may be patterned layers. In another example, the electrochromic device is an electrochromic window, where (refer to...) Figure 1A The first substrate 24 and the second substrate 25 are glass windows or other transparent substrates. The electrochromic device 1 has two busbars 26 and 27 located on opposite sides of the first electrode layer 20 and the second electrode layer 21, respectively. In addition, the first conductive layer is patterned such that the resistance of electron flow in the first conductive layer 22 increases approximately non-linearly with increasing distance from the busbar 26 (e.g., an approximately hyperbolic surface resistance), and / or the second conductive layer is patterned such that the resistance of electron flow in the second conductive layer 23 increases approximately non-linearly with increasing distance from the busbar 27 (e.g., an approximately hyperbolic surface resistance). Electrochromic device configured with a conductive layer for voltage detection Figure 12AAn example of an electrochromic device 1200 with a non-rectangular substrate is shown. In this example, the substrate, conductive layer, electrode layer (electrochromic layer), and other device layers (e.g., an ion-conducting layer between two electrode layers) are all approximately right-angled trapezoids. The busbars in device 1200 are parallel to each other and have different lengths. For example, a conductive layer and a cathode electrochromic layer may be formed on the upper substrate 1201, and a conductive layer and an anode electrochromic layer may be formed on the lower substrate 1202, and so on. Figure 12A As shown, the cathode busbar 1203 can be longer than the anode busbar 1204. Figure 12B Showing what can be used Figure 12A Example of the surface resistance gradient distribution of the upper and lower conductive layers of a device 1200 containing a non-rectangular substrate. Figure 12B The resistance distribution shown can be formed in the upper and lower conductive layers of device 1200, such that the resistance distribution varies along the x-direction as shown in the figure, and is substantially constant (does not change) along the y-direction (for all x positions). Figures 12C to 12S The paper includes a structure of a non-rectangular electrochromic device, and details and results obtained by modeling the device structure according to some embodiments. In general, similar models can be used to simulate non-rectangular electrochromic devices of other shapes, or electrochromic devices with irregular busbars (e.g., non-parallel busbars, or one or more L-shaped busbars, inclined busbars, curved busbars, etc.). For the results shown herein, a finite element model is used to simulate the potential drop between the busbars and locations in the conductive layer, and then a lookup table is used to simulate the current-voltage characteristics of the electrochromic cell stack between the conductive layers (e.g., as shown in the image). Figure 1A As shown). This lookup table is used to simulate the vertical component of the fundamental electrical characteristics of electrochromic devices (e.g., Figure 12A (in the z-direction) (e.g., effective resistance). Figure 12C An example of a lookup representation that can be used for this model is shown. Figure 12C The lookup table was determined experimentally using a small (e.g., approximately 6 inches x 6 inches) test electrochromic device, where the device was initially in a decolorized state, a voltage was set to a specific value, and the current was recorded. The transferred charge ("Q[C / cm²]) was determined by integrating the recorded current over time. 2 Then repeat the process over a range of voltages. Figure 12CThe data has been reorganized to show that the current-voltage relationship may not be nonlinear. The vertical component of the device's electrical characteristics is often influenced by the electrochromic and ionicly conductive materials used. Using a lookup table allows the model to calculate the local cell potential in a device with a resistance gradient. For example, the portion of each node in a finite element model located between two conductive layers can be modeled as a locally electrochromic device element operating according to the lookup table. In this case, the model can use the amount of charge accumulated at the node (e.g., for a specific voltage applied to the busbar, or for a specific target coloring state), and then use the amount of charge accumulated at the node to determine... Figure 12C Which curves (or transfer functions) in the model are used to simulate the current-voltage characteristics of the nodes. The accumulated charge can be an offset relative to the nominal value or zero. During minimization, the finite element model can use a lookup table in each iteration of the local resistance map until a final local cell potential map that meets the target requirements is generated. In other embodiments, an equivalent circuit can be used instead of a lookup table to model the vertical components of the device's electrical characteristics to determine the effective resistance of the electrochromic layer stack. Figure 12D This diagram illustrates a simulated voltage distribution of an electrochromic device with a right-angled trapezoidal substrate, wherein the conductive layer of the device has a similar shape along the x-direction. Figure 12B The resistance gradient (or surface resistance gradient) is shown and is substantially constant along the y-direction at all x-positions. The device has two parallel busbars of different lengths, arranged similarly to... Figure 12A Device 1200. Figure 12D The voltage distribution plotted in the image represents the local battery potential (or, in a similar context) Figure 12A In the device shown, the voltage drop between the upper conductive layer and the lower conductive layer), wherein the cathode electrochromic layer, the ion-conducting layer, and the anodic electrochromic layer are disposed between the upper conductive layer and the lower conductive layer (e.g., as shown). Figure 1A and Figure 12A As shown, the upper conductive layer and the lower conductive layer are formed on the upper substrate and the lower substrate. Figure 12D The modeling results show that when a bias voltage is applied across the busbar and the resistor gradient is used, there is a significant non-uniform local cell potential (or voltage drop) across the device. Figure 12E This diagram illustrates the simulated voltage distribution of an electrochromic device with a right-angled trapezoidal substrate, where the conductive layer of the device has a resistance gradient (or sheet resistance gradient) that varies along the x-direction and also along the y-direction (or allows variation along the y-direction at all x-positions). An algorithm is used to configure (or optimize, or design, or adjust) the resistance gradient (or sheet resistance gradient) to... Figure 12B The initial (e.g., generated by analytical or numerical methods) resistance gradient shown (and) Figure 12DStarting with the simulated resistance gradient in the device shown, the algorithm modifies the gradient resistance distribution and determines the output local cell potential map of the device based on it. The output local cell potential map is then compared with the target local cell potential map, and the difference between the two maps is calculated. The algorithm then attempts to minimize the difference between the output and target local cell potential maps. Figure 12D and Figure 12E In the example shown, the target local cell potential map is uniform within the effective region of the device. Figure 12E The voltage distribution shown is compared to Figure 12D The example shown is an improvement (i.e., a more uniform) in voltage distribution. However, Figure 12E High-voltage regions still exist in the simulated devices, such as those appearing near the short edges of the devices. When a bias voltage is applied between the busbars (and current flows), these high-voltage regions switch faster and exhibit visual non-uniformity during device switching. Figures 12F to 12I Show Figure 12E The simulated surface resistance gradient (or resistance gradient distribution, or the relationship between resistance and position as current flows) in the device shown. Figure 12F and Figure 12H The superimposed diagrams of the surface resistance of the upper and lower conductive layers at all (x,y) positions are shown. Figure 12G and Figure 12I Contour plots (on a logarithmic scale) showing the sheet resistance of the upper and lower conductive layers are shown respectively. Figure 12J and Figure 12K The diagram shows a simulated voltage distribution of an electrochromic device with a right-angled trapezoidal substrate, wherein the conductive layer of the device has a similar... Figure 12E The device shown has a resistance gradient (or surface resistance gradient) that varies along the x and y directions. In this case, the resistance gradient is configured (or optimized, designed, or adjusted) such that a local maximum local cell potential (or voltage drop) is formed in the device. Figure 12D and Figure 12E In the example shown, the target local cell potential map is non-uniform within the effective region of the device and contains the region of maximum local cell potential aligned with the known sense voltage pad location. Figure 12J and Figure 12K The simulated devices have parallel busbars of varying lengths (similar to...). Figure 12A (As shown). Figure 12J The simulated device has a long busbar (i.e., a "long anode busbar") connected to the substrate where the anode electrochromic layer is located. Figure 12K The analog devices are Figure 12JA mirror image of the device (i.e., shown from opposite sides with the anode and cathode substrates interchanged) has a long busbar (i.e., a "long cathode busbar") connected to the substrate containing the cathode electrochromic layer. In both cases, high-voltage regions are formed near the anode busbar, aligned with the detection voltage pad. Aligning the regions of maximum local cell potential (B10 and C10) with the detection voltage pad helps prevent damage to these devices during switching and achieves more uniform and faster switching compared to devices without a resistance gradient in the conductive layer. In this case, regions B10 and C10 are areas containing both the detection voltage pad and the maximum local cell potential. In other words, intentionally forming non-uniform local cell potentials that include the regions of maximum local cell potential (B10 and C10) aligned with the detection voltage pad is advantageous for electrochromic devices. Figure 12L The diagram shows a simulated voltage distribution of an electrochromic device with a right-angled trapezoidal substrate, wherein the conductive layer of the device has a similar... Figure 12E The resistance gradient (or surface resistance gradient) of the device shown varies along the x and y directions. Figure 12L The analog devices have similar Figure 12A The parallel busbars shown are of different lengths; however... Figure 12L The simulated devices have different shapes, with larger differences in bus length. In this case, the resistance gradient is configured (or optimized, designed, or adjusted) to create a local maximum local cell potential region CC10 (or voltage drop) within the device. In this configuration, the device has a long anode bus, and the maximum local cell potential region forms near the anode bus, aligned with the position of the sense voltage pad. Aligning the maximum local cell potential region with the sense voltage pad helps prevent damage to these devices during switching and achieves more uniform and faster switching compared to devices without a resistance gradient in the conductive layer. Figure 12L The lower figure shows the voltage values ​​along the dashed line in the upper figure. In this case, the resistance gradient is configured to provide a more uniform potential drop across the device. Figure 12LThe local cell potential (or voltage drop across the device) in most of the central region of the simulated device is approximately 0.5 volts, or between 0.47 volts and 0.52 volts. However, near the busbars (at y-positions of 0 and approximately 1.5), the voltage drop may be significantly higher (e.g., above 0.55 volts) or lower (e.g., below 0.4 volts) than the average of approximately 0.5 volts. (Note that no curve in the figure below shows data for the location of the maximum cell potential CC10.) The maximum local cell potential region CC10 has a local cell potential CC20. Regions with lower voltages will switch more slowly and appear as non-uniform areas during device switching. Regions with higher voltages will switch more quickly and are also visually non-uniform; more importantly, these regions may age faster than regions with lower voltage drops. For example, if one or more sense voltage pads (used to control device switching, such as to prevent damage) are located in regions with voltage drops at or below the average, these regions with higher voltage drops may overdrive during switching, potentially leading to durability issues and damage. (See reference...) Figure 12L If the detection voltage electrode is located near region CC10, and the voltage drop CC20 in this region is significantly lower than in other regions of the device, a large portion of the device may be damaged during switching. Therefore, it is advantageous to configure the resistance gradient of the conductive layer to form the region of maximum voltage drop aligned with the location of the detection voltage pad. Without physical experiments or detailed modeling, the experimental results (described in the Examples section below) and Figures 12D to 12L The modeling results are difficult to predict. For example, the study found that even when using gradients configured for non-rectangular devices, non-rectangular devices still exhibit inhomogeneity issues. Through experiments and detailed modeling, it was discovered that devices with fairly uniform local cell potential (or voltage drop) over most areas may have local hot spots. It was further recognized that the position of the sense voltage pad relative to the hot spots is crucial when using drivers and driving methods that rely on sense voltage pad measurements. This finding led researchers to realize that non-rectangular devices can benefit from configuring gradients to form a region of maximum local cell potential aligned with the sense voltage pad location. These concepts only became clear after detailed modeling and experimentation; prior to this, they were not well-defined. Furthermore, it should be noted that several manufacturing constraints contributed to the discovery of the concepts described above, as well as the devices and methods described herein. For example, for right-angled trapezoidal devices where the busbars are constrained to be parallel (forcing them to have different lengths), forming a gradient that can provide a uniform local cell potential across the entire effective region is challenging. The modeling and experiments described herein to overcome the practical constraints imposed by manufacturing equipment limitations facilitated the realization of the concepts described above, as well as the devices and methods described herein. Figure 12M Showing with Figure 12AThis is a schematic example of an electrochromic device F00 similar to the device 1200 shown (described above). In this example, device F00 includes detection voltage pads F40 and F60 and detection voltage terminals F50 and F70, with each substrate having one detection voltage pad and one detection voltage terminal. The detection voltage pads F40 and F60 and the detection voltage terminals F50 and F70 in this example can be configured to measure the local cell potential at the detection voltage measurement location within the electrochromic device, for example... Figure 1B and Figure 1C The detection voltage pads D40 and E40 are shown in the diagram. For example, detection voltage pads F40 (and F60) can be formed by etching (or other isolating methods) a region of the transparent conductive layer on the substrate. Detection voltage pads F40 and F60 can be located near a high-potential region (e.g., as shown in the diagram). Figure 12K The curve and Figure 12M (As shown in the illustration). During switching, the driver can use the input of the sensed voltage to limit the bias voltage applied to the busbar, which helps prevent damage (due to the local potential exceeding the damage threshold potential in the device). In some embodiments, the resistance gradient can be configured (or optimized, designed, or adjusted) to fit the sense voltage pad. For example, the resistance gradient of one or two conductive layers can be designed such that the highest local cell potential (or voltage drop) between the layers of the device occurs (or is close to, approximately at) the sense voltage pad. Figures 12N to 12S An example of the resistance gradient of the upper and lower conductive layers of an electrochromic device with a right-angled trapezoidal substrate is shown. Figures 12N to 12O Showing with Figure 12D Example of a similar resistance gradient (or surface resistance gradient) device (where the resistance gradient (or surface resistance gradient) of the conductive layer varies along the x-direction, but the local maximum value of the local cell potential (or voltage drop) is not designed in the device). Figures 12P to 12Q An example of the resistance gradient (or surface resistance gradient) of an electrochromic device with a long anode busbar is shown, wherein the resistance gradient varies along the x and y directions, and a local maximum of the local cell potential (or voltage drop) is designed near the right-angle corner of the long anode busbar. Figures 12R to 12S An example of the resistance gradient (or surface resistance gradient) of an electrochromic device with a long cathode busbar is shown, wherein the resistance gradient varies along the x and y directions, and a local maximum of the local cell potential (or voltage drop) is designed near the right-angle corner of the short anode busbar. Figure 13A A schematic example of an electrochromic device with etched lines forming a resistance gradient in a conductive layer is shown. Figure 13A The device shown and Figure 5The devices shown are similar, but Figure 13A The components in the design are non-rectangular. Figure 13A The scribe pattern in the device shown has multiple scribe groups that are substantially parallel to the parallel busbars. In this example, the multiple scribe groups have segment lengths (304a, 304b, 304c, and 304d) that vary along two orthogonal directions (x and y) to configure the resistance gradient in the conductive layer, thereby creating a more uniform local cell potential (or voltage drop) and / or creating a region with the maximum local cell potential (which may be approximately aligned with the detection voltage pad H10). Other variations of the scribing geometry can also be on a non-rectangular base (e.g., Figure 12G , Figure 12I , Figure 12J , Figure 12K , Figure 12L , Figure 12O , Figure 12Q and Figure 12S The right-angled trapezoidal base (or other non-rectangular base shape) provided the resistance gradient. For example, the length of line segments 304a-d, the period 305, the valve width 306, the offset between line segments in adjacent scribe groups 308, or the period offset (e.g., Figure 8 The geometry shown (309) can be varied (independently or in combination) to provide a resistance gradient for a non-rectangular substrate. Any of these geometries can be varied in the x-direction, y-direction, or both the x-direction and y-direction to achieve a resistance gradient in a non-rectangular device. Figure 13B A schematic example of an electrochromic device with etched lines is shown, which form a resistance gradient in a conductive layer. In this example, the etched line length 304d is longer than the period 305a associated with the etched line length 304b, and the period 305b has been increased to accommodate the longer etched line length 305d. Furthermore, the gradient described herein may not be formed using etched patterns; for example, it may be formed using variations in the thickness and / or electrical properties of a transparent conductive material. For example, Figure 12G , Figure 12I and Figures 12N to 12S The gradient can be formed using a TCO layer of variable thickness, a TCO layer with variable electrical properties (e.g., variations in defect and / or dopant concentrations), or variations in the concentration of nanoparticles embedded in the matrix. Figures 14A to 14G An example of a non-rectangular electrochromic device with a busbar LA10 is shown. Each device also illustrates a possible location for a detection voltage pad LA30, where gradients can be configured to form a region of maximum local cell potential aligned with the detection voltage pad. The detection voltage pad LA30 in this example can be configured to measure the local cell potential at the detection voltage measurement location within the electrochromic device, for example, as... Figure 1B and Figure 1CThe sense voltage pads D40 and E40 are shown in the diagram. Some embodiments show multiple sense voltage pad LA30 locations, which can represent the possible locations of a device with multiple sense voltage pad locations, or a single sense voltage pad (or a group of single sense voltage pads aligned along the z-direction (perpendicular to the plane of the paper)). For example, Figures 14D to 14G Examples of irregular busbars are shown, which are either slanted or curved. Figure 14G The example in the image shows a device in the shape of a right trapezoid, where one of the busbars bends near an obtuse corner, such that the two busbars are approximately the same length. Figures 14A to 14G The devices shown all have two opposing busbars, but in other cases, more than two busbars may be used. In some cases, manufacturing equipment may impose practical limitations on the shape of the device and the types of patterns achievable in production (e.g., in a large-scale manufacturing environment). For example, the manufacturing equipment may only be able to form parallel busbars. In another example, the manufacturing equipment may be limited to producing specific types of scribe patterns, such as patterns with straight scribe lines and parallel scribe line segments. In yet another example, due to yield requirements, the manufacturing equipment may make certain types of scribe patterns undesirable (or infeasible), in which case reducing the number of scribe groups or limiting the type or number of movements of the laser stage used to form the scribe groups (e.g., the x-direction or y-direction as described herein) may be advantageous. In some cases, the width of the scribe lines in the conductive layer of the device is limited to a specific value to minimize their visual appearance (e.g., invisible to the user, or substantially invisible to a user located at a specific distance from the device). In some cases, manufacturing limitations (or other practical problems, such as manufacturing variability) may make it impossible (or undesirable, e.g., due to yield issues) to form electrochromic devices with perfectly uniform switching of resistance gradients. The devices and methods described herein can be used to configure (or optimize, adjust, design) resistance gradients to form electrochromic devices with more uniform switching, faster switching, and / or better protection against damage or degradation (e.g., due to overdrive in certain areas of the device). For example, the devices and methods described herein can be used to configure (or optimize, adjust, design) resistance gradients to form electrochromic devices with a region of maximum local cell potential (or voltage drop) aligned with the detection voltage pad (e.g., to improve device durability). Resistance gradients can also be configured to simultaneously improve switching uniformity and speed compared to devices without gradients (or with poorly optimized gradients). The resistance gradient of the conductive layer described in this article is beneficial for both rectangular and non-rectangular devices. For example, practical design constraints can be incorporated into the target local cell potential map and the resistance gradient of the conductive layer for rectangular (or non-rectangular) devices. For example, in some cases, the optimal sheet resistance distribution would include an infinitely large (or very large) sheet resistance near one or two busbars of the device. However, such an infinitely large (or large) resistance is impossible (or impractical) to achieve (e.g., using a scribed pattern). In such cases, the resistance gradient of the conductive layer can be configured (or optimized, adjusted, designed) within the constraint of the maximum achievable sheet resistance to form a rectangular electrochromic device with more uniform switching, faster switching, and / or better protection against damage or degradation (e.g., due to overdrive in certain areas of the device) compared to devices that do not use the improved gradient described herein. In another example, the region near the edge or busbar of a rectangular (or non-rectangular) device may have a different resistance gradient than the region further away from the edge, corner, or end of the busbar. For example, the potential may decrease along the busbar (especially if the busbar is long and / or made of a material with relatively high resistivity), and the resistance gradient can be configured to account for this potential decrease along the busbar. In another example, the resistance gradient in a rectangular (or non-rectangular) device can be configured to form a region of maximum local cell potential (or voltage drop) aligned with the sense voltage pad. Furthermore, the resistance gradient in a rectangular (or non-rectangular) device can be configured to compensate for any potential loss between the sense voltage pad and the sense voltage terminal (e.g., connector), which can be advantageous as it relaxes some restrictions on the location of the sense voltage pad (e.g., it can be moved further away from the terminal). In practical devices, small variations in resistance (e.g., due to manufacturing variability) can in some cases cause the sense voltage pad to align with a region of low or average local cell potential. Therefore, such devices will also benefit from the configuration of gradients to form a region of maximum local cell potential aligned with the sense voltage pad. In practical situations, such as those with manufacturing constraints as described above, it may be difficult to determine analytical solutions for resistance gradients, and the devices and methods described herein can be used to overcome the practical challenges of rectangular and non-rectangular devices. For example, the devices and methods described herein can be implemented in two orthogonal directions (e.g., Figure 1C , Figure 3A and Figure 12A The resistance gradient can be varied along the x and y directions (in the image) to improve the performance of the actual device. In some cases, this is achieved by having intentionally non-uniform local cell potential maps on such rectangular or non-rectangular devices, for example, forming a region of maximum local cell potential aligned with the sense voltage pad. Method for electrochromic devices with resistance gradient In some embodiments, a method for controlling the electrochromic device described herein includes the steps of: applying a constant supply current to the electrochromic device using at least two busbars of the electrochromic device; determining an amount of charge transferred to the electrochromic device as a function of time and the current supplied to the electrochromic device; measuring a detection voltage using a first detection voltage pad of the electrochromic device; stopping the application of the constant supply current in response to the detection voltage reaching a detection voltage limit; applying either a variable voltage or a variable current to the electrochromic device using the busbars in response to the detection voltage reaching the detection voltage limit to maintain the detection voltage at the detection voltage limit; and terminating the application of the variable voltage or variable current to the electrochromic device in response to the determined amount of charge reaching a target amount of charge. For example, the electrochromic device may include two conductive layers, each having a resistance gradient, wherein when an external bias is applied to the first and second busbars of the electrochromic device, the resistance gradient is configured to align the first detection voltage pad with a region including the maximum local cell potential across the first and second conductive layers. In some embodiments, a method related to the electrochromic device described herein includes the following steps: applying a constant supply current to the electrochromic device using a first busbar and a second busbar; determining an amount of charge transferred to the electrochromic device as a function of time and the current supplied to the electrochromic device; measuring a detection voltage using a first detection voltage pad of the electrochromic device; stopping the application of the constant supply current in response to the detection voltage reaching a detection voltage limit; applying either a variable voltage or a variable current to the electrochromic device using the busbars in response to the detection voltage reaching the detection voltage limit to maintain the detection voltage at the detection voltage limit; and terminating the application of the variable voltage or variable current to the electrochromic device in response to the determined amount of charge reaching a target amount of charge. For example, an electrochromic device may include: a first conductive layer disposed on an inner surface of a first transparent substrate, wherein the first conductive layer includes a first resistance gradient varying as a function of position for a current flowing in the first conductive layer; a second conductive layer disposed on an inner surface of a second transparent substrate, wherein the second conductive layer includes a second resistance gradient varying as a function of position for a current flowing in the second conductive layer; a first busbar in contact with the first conductive layer; a second busbar in contact with the second conductive layer; and a first detection voltage pad in contact with the first conductive layer. When an external bias voltage is applied to the first and second busbars of the electrochromic device, the first and second resistance gradients may be configured to align the first detection voltage pad with a region including the maximum local cell potential across the first and second conductive layers. In some embodiments, a method associated with the electrochromic device described herein includes the following steps: determining an amount of charge transferred to the electrochromic device as a function of time and current supplied to the electrochromic device; applying one of a variable voltage or a variable current to the electrochromic device in response to a detection voltage reaching a detection voltage limit to maintain a detection voltage measured at one or more detection voltage pads of the electrochromic device at the detection voltage limit, wherein the one or more detection voltage pads are different from a voltage source busbar of the electrochromic device; terminating the application of the variable voltage or variable current to the electrochromic device in response to the determined amount of charge reaching a target amount of charge; reversing the polarity of a reversible constant current source, wherein the reversible constant current source applies a constant supply current with reversed polarity to the electrochromic device; reversing the polarity of a reversible variable voltage source, wherein the reversible variable voltage source applies a variable voltage with reversed polarity to the electrochromic device, and wherein the detection voltage limit is zero volts; and delaying termination for a predetermined period of time during which the detection voltage remains at zero volts. For example, an electrochromic device may include two conductive layers, each having a resistance gradient, wherein when an external bias is applied to a first and second busbar of the electrochromic device, the resistance gradient is configured to align the detection voltage pad with a region including the maximum local cell potential across the first and second conductive layers. In some embodiments, a method associated with the electrochromic device described herein includes the steps of: determining an amount of charge transferred to the electrochromic device as a function of time and current supplied to the electrochromic device; applying either a variable voltage or a variable current to the electrochromic device to maintain the detection voltage at the detection voltage limit in response to a detection voltage reaching a detection voltage limit; and terminating the application of the variable voltage or variable current to the electrochromic device in response to the determined amount of charge reaching a target amount of charge. For example, the electrochromic device may include two conductive layers, each having a resistance gradient, wherein when an external bias is applied to a first and second busbar of the electrochromic device, the resistance gradient is configured such that a detection voltage pad used for measuring the detection voltage is aligned with a region including the maximum local cell potential across the first and second conductive layers. In some embodiments, a method related to the electrochromic device described herein includes the following steps: forming an electrochromic device having a resistance gradient; applying a constant supply current to the electrochromic device using a first busbar and a second busbar of the electrochromic device; determining an amount of charge transferred to the electrochromic device as a function of time and the current supplied to the electrochromic device; measuring a detection voltage using a first detection voltage pad of the electrochromic device; stopping the application of the constant supply current in response to the detection voltage reaching a detection voltage limit; applying either a variable voltage or a variable current to the electrochromic device using the busbars in response to the detection voltage reaching the detection voltage limit to maintain the detection voltage at the detection voltage limit; and terminating the application of the variable voltage or variable current to the electrochromic device in response to the determined amount of charge reaching a target amount of charge. Forming an electrochromic device may include: forming a first conductive layer disposed on an inner surface of a first transparent substrate, wherein the first conductive layer includes a first resistance gradient varying as a function of position for a current flowing in the first conductive layer; forming a second conductive layer disposed on an inner surface of a second transparent substrate, wherein the second conductive layer includes a second resistance gradient varying as a function of position for a current flowing in the second conductive layer; forming a first busbar in contact with the first conductive layer; forming a second busbar in contact with the second conductive layer; and forming a first detection voltage pad in contact with the first conductive layer, wherein when an external bias is applied to the first busbar and the second busbar of the electrochromic device, the first resistance gradient and the second resistance gradient are configured to align the first detection voltage pad with a region including a maximum local cell potential across the first and second conductive layers. In some embodiments, a method associated with the electrochromic device described herein includes modeling the resistance gradient of a conductive layer of the electrochromic device using a finite element model. The electrochromic device may include two busbars, which may be parallel busbars or other configured busbars. Modeling may include: starting with an initial resistance gradient of the conductive layer, the initial resistance gradient including a gradient in the x-direction generally perpendicular to the electrochromic device busbars, and no gradient in the y-direction perpendicular to the x-direction; defining a first region including a detection voltage pad; providing a target local cell potential map including a first local cell potential value across an active region of the electrochromic device, and a maximum local cell potential within the first region; and generating a final resistance gradient of the conductive layer using the finite element model to form a final local cell potential map, wherein the finite element model minimizes the difference between the final local cell potential map and the target local cell potential map, and wherein the final resistance gradient includes gradients in both the x- and y-directions. The initial resistance gradient may be an analytically generated guess or a guess generated using discrete numerical methods. For example, the initial resistance gradient can be based on a similar geometry that can be analytically computed, such as using the initial resistance gradient of a rectangular device to model a trapezoidal device. In some cases, the target local cell potential map may have a predetermined difference (or increment) between the target local cell potential value and the maximum local cell potential. The definition of the first region in the above methods may include defining the area in the device where the sense voltage pad will be placed, for example, due to manufacturing or other practical constraints. In some cases, the above methods may further include forming a resistance gradient in the conductive layer of the electrochromic device. The conductive layer in the above methods may include a transparent conductive oxide material, and forming the resistance gradient may include forming a etched pattern using a laser. The conductive layer in the above methods may include a transparent conductive oxide material, and forming the resistance gradient may include forming a conductive layer with varying thickness. The conductive layer in the above methods may include a transparent conductive oxide material, and forming the resistance gradient may include forming a conductive layer with varying electrical properties. In some cases, the above methods may include: forming conductive layers on two substrates; forming a first electrochromic layer on one of the conductive layers; and coupling the two substrates together using an ion-conductive layer such that the conductive layers face each other and the two substrates are on the outside. In some cases, the above methods may include forming a second electrochromic layer on another conductive layer before coupling the substrates. In some embodiments, the modeling described above may include starting with an initial resistance gradient of the conductive layer, for example, an analytically generated initial resistance gradient, an initial resistance gradient generated using a discrete numerical method, or an initial resistance gradient provided as a lookup table. The initial resistance gradient may further include a gradient in the x-direction generally perpendicular to the busbar of the electrochromic device, and no gradient in the y-direction perpendicular to the x-direction, or the initial resistance gradient may include gradients in both the x and y directions. The first region including the detection voltage pad may be a region where the maximum local cell potential can be formed. The target local cell potential map may include a range of local cell potentials across the active region of the electrochromic device, wherein the maximum local cell potential of the device lies within the first region. The finite element model may use conventional algorithms, such as algorithms seeking to minimize the root mean square error (RMSE), to minimize the difference between the final local cell potential map and the target local cell potential map. The final resistance gradient includes gradients in both the x and y directions such that the first region includes the maximum local cell potential. Electrochromic devices with patterned conductive layers and redox elements In some embodiments, the electrochromic (EC) device has one or more non-uniformly conductive layers and a redox element, wherein the redox element isolates charge from the one or more layers comprising the electrochromic device. In some cases, the redox element isolates charge to mitigate or prevent performance degradation of the electrochromic device due to Faraday losses. In some cases, the redox element isolates charge to mitigate or prevent a decrease in the photometric contrast ratio of the electrochromic device. In some embodiments, the redox element is an active redox element, wherein the active redox element is electrically connected to one or more auxiliary electrodes and isolates charge from other layers of the electrochromic device in response to a potential applied by the auxiliary electrodes coupled to an auxiliary control circuit. The auxiliary electrodes are electrically isolated from a conductive layer that applies a potential to the anode and cathode of the EC device to switch the EC device from a higher transmittance state to a lower transmittance state, thereby allowing an isolation potential to be applied independently of the potential between the anode and cathode of the EC device. In different cases, the redox element may be located laterally adjacent to (i) the first conductive layer, (ii) the first electrode layer, (iii) the ion conductor layer, (iv) the second electrode layer and / or (v) the second conductive layer. In some cases, the electrochromic device has redox elements and a first conductive layer and a second conductive layer, and the device region is generally quadrilateral, with a busbar connecting to each of the two conductive layers such that they are oriented along two opposite edges of the quadrilateral device. The redox elements may also be located on one side of one or two substrates, on the side opposite to, adjacent to, or on the same side as the busbar on one or two substrates. The redox elements may also be located on more than one edge of one or two substrates, on the side opposite to, adjacent to, or on the same side as the busbar on one or two substrates. Two or more redox elements may also be present, located on one, two, three, or four sides of the quadrilateral, and on one or two substrates. The redox elements may also be formed in an "L" shape and span two adjacent sides of the quadrilateral. One, two, or more redox elements may also be present, configured in different combinations as described herein. For example, there may be two “L”-shaped redox elements, each spanning two adjacent sides of a quadrilateral and located on different substrates, and two other redox elements located on a single side, each sharing a substrate with the “L”-shaped redox elements. The four sides of the quadrilateral of the first base can be designated as sides A, B, C, and D, where sides A and B meet at a vertex, sides B and C meet at a vertex, sides C and D meet at a vertex, and sides D and A meet at a vertex of the first base. The four sides of the quadrilateral of the second base are designated as sides A', B', C', and D', where sides A' and B' meet at a vertex, sides B' and C' meet at a vertex, sides C' and D' meet at a vertex, and sides D' and A meet at a vertex of the second base. The two bases can be connected to form an electrochromic device, and the two bases are rotated such that sides A and A' are parallel and closest to each other, sides B and B' are parallel and closest to each other, sides C and C' are parallel and closest to each other, and sides D and D' are parallel and closest to each other. In other words, the EC device ABCD has a generally rectangular substrate with edges A, B, C, and D, and the EC device A'B'C'D' has a second generally rectangular substrate with edges A', B', C', and D', and when the two substrates are assembled into a device, edges A and A' are parallel and closest to each other, and edges C and C' are parallel and closest to each other. In this case, the first busbar may be located along edge A of the first substrate, and the second busbar may be located along edge C' of the second substrate. Redox elements may also be located on the sides A, B, C, or D of the first substrate, or on the sides A', B', C', or D' of the second substrate. Redox elements may also be located on the sides A and / or B and / or C and / or D of the first substrate, and / or on the sides A' and / or B' and / or C' and / or D' of the second substrate. The redox element may also be located on one, two, three, or four sides of the quadrilateral, and on sides A and / or B and / or C and / or D of the first substrate, and / or on sides A' and / or B' and / or C' and / or D' of the second substrate. The redox element may also be formed in an "L" shape, spanning two adjacent sides of the quadrilateral, and on sides A and B, and / or B and C, and / or C and D, and / or D and A of the first substrate, and / or on sides A' and B', and / or B' and C', and / or C' and D', and / or D' and A' of the second substrate. One, two, or more redox elements may also be present, configured in different combinations as described herein. For example, there may be two “L”-shaped redox elements, each spanning two adjacent sides of a quadrilateral and located on different substrates (e.g., on sides A and B, and / or B and C, and / or C and D, and / or D and A of a first substrate, and on sides A' and B', and / or B' and C', and / or C' and D', and / or D' and A' of a second substrate), and two additional redox elements located on a single side, each sharing a substrate with the “L”-shaped redox element (e.g., on sides A, B, C, or D of the first substrate, and on sides A', B', C', or D' of the second substrate). As described herein, the conductive layer can be non-uniform to promote a more uniform cell potential and transmittance (i.e., reduced iris effect) in the electrochromic device during switching. In some embodiments, a potential drop occurs within the conductive layer as the distance between a point on the conductive layer and the busbar increases. To apply a potential to the redox element, the redox element needs to be electrically isolated from the conductive layer. In some cases, this isolation is achieved by forming a gap between the conductive layer and the redox element. In some cases, this gap is a laser-etched channel in a transparent conductive material (constituting the conductive layer). In some embodiments, it may be more advantageous to position the redox element at the same edge as the busbar, since the potential difference between any location of the redox element and the adjacent conductive layer is approximately constant at the edge. Referring to the definition of the quadrilateral substrate above, a generally rectangular substrate of the electrochromic device ABCD has edges A, B, C, and D, and a second generally rectangular substrate of the electrochromic device A'B'C'D' has edges A', B', C', and D'. When the two substrates are assembled into a device, edges A and A' are parallel and closest to each other, and edges C and C' are parallel and closest to each other. In some embodiments, a first busbar is located along edge A of the first substrate, a second busbar is located along edge C' of the second substrate, the conductive layer is non-uniform, and redox elements are located at edges A, C, A', and / or C'. For example, in some embodiments, if the first busbar is located along edge A of the first substrate, the second busbar is located along edge C' of the second substrate, the conductive layer is non-uniform, and redox elements are located at edges A and C, then the potential difference between the redox element at edge A and the adjacent conductive layer is the same along the entire length of edge A; the potential difference between the redox element at edge C and the adjacent conductive layer is also the same along the entire length of edge C. This is because when the conductive layer is non-uniform to facilitate a more uniform cell potential and transmittance during the switching process of the electrochromic device, the equipotential lines in the conductive layer are parallel to the busbars (i.e., parallel to edges A and C). As a contrasting example, if the redox element in this example is located at edge B, and a similar potential is applied between each redox element and one of the busbars, the potential difference between the redox element and the adjacent conductive layer will be greater near the busbars (e.g., near edge A on edge B) and smaller away from the busbars (e.g., near edge C on edge B). In some embodiments, one or more portions of the electrode opposite the redox element are electrically isolated from the electrode body. For example, a generally rectangular substrate ABCD has edges A, B, C, and D, and a second generally rectangular substrate A'B'C'D' has edges A', B', C', and D', and when the two substrates are assembled into a device, edges A and A' are parallel and closest to each other, and edges C and C' are parallel and closest to each other; a first busbar is located along edge A of the first substrate, a second busbar is located along edge C' of the second substrate, the conductive layer is non-uniform, and the redox element is located at edges A and C; the electrode portion at edge A' opposite the redox element at edge A is electrically isolated from the electrode body on substrate ABCD; the electrode portion at edge C' opposite the redox element at edge C is electrically isolated from the electrode body on substrate A'B'C'D'. In some cases, the electrode opposite the redox element and one or more portions of the conductive layer are electrically isolated from the electrode body. The value of the resistance gradient In some embodiments, the sheet resistance distribution on one or two conductive layers varies approximately within the range of 1 ohm / s² to 10,000 ohms / s², 10 ohms / s² to 2,000 ohms / s², 1 ohm / s² to 5,000 ohms / s², 10 ohms / s² to 10,000 ohms / s², 10 ohms / s² to 5,000 ohms / s², 1 ohm / s² to 1,000 ohms / s², 10 ohms / s² to 1,000 ohms / s², 8 ohms / s² to 16,000 ohms / s², or 1 ohm / s² to 20,000 ohms / s². In some embodiments, r in the first conductive layer pattern (x) / r linear The average ratio of (x) is at least about 1.1, about 1.25, about 1.5, about 2, about 3, about 5, about 10, about 50, about 100, about 300, or in the range of about 1.1 to about 1.25, about 1.1 to about 2, about 1.1 to about 3, about 1.1 to about 5, about 1.1 to about 10, about 1.1 to about 20, about 1.1 to about 30, about 1.1 to about 50, about 1.1 to about 100, or about 1.1 to about 300. In some embodiments, r in the second conductive layer pattern (x) / r linear The average ratio of (x) is at least about 1.1, about 1.25, about 1.5, about 2, about 3, about 5, about 10, about 50, about 100, about 300, or in the range of about 1.1 to about 1.25, about 1.1 to about 2, about 1.1 to about 3, about 1.1 to about 5, about 1.1 to about 10, about 1.1 to about 20, about 1.1 to about 30, about 1.1 to about 50, about 1.1 to about 100, or about 1.1 to about 300. In some embodiments, r in the first conductive layerpattern (x) / r linear The average ratio of (x) is at least about 1.1, about 1.25, about 1.5, about 2, about 3, about 5, about 10, about 50, about 100, or about 300, or in the range of about 1.1 to about 1.25, about 1.1 to about 2, about 1.1 to about 3, about 1.1 to about 5, about 1.1 to about 10, about 1.1 to about 20, about 1.1 to about 30, about 1.1 to about 50, about 1.1 to about 100, or about 1.1 to about 300; and r in the second conductive layer pattern (x) / r linear The average ratio of (x) is at least about 1.1, about 1.25, about 1.5, about 2, about 3, about 5, about 10, about 50, about 100, about 300, or in the range of about 1.1 to about 1.25, about 1.1 to about 2, about 1.1 to about 3, about 1.1 to about 5, about 1.1 to about 10, about 1.1 to about 20, about 1.1 to about 30, about 1.1 to about 50, about 1.1 to about 100, or about 1.1 to about 300. In some embodiments, the average Δr of the device per unit width in the first and / or second conductive layers p-l (x) is at least 0.1 ohm-meter, 0.3 ohm-meter, 1 ohm-meter, 3 ohm-meter, 10 ohm-meter, 30 ohm-meter, about 100 ohm-meter, or in the range of about 0.1 to about 0.3 ohm-meter, about 0.1 to about 1 ohm-meter, about 0.1 to about 3 ohm-meter, about 0.1 to about 10 ohm-meter, about 0.1 to about 30 ohm-meter, or about 0.1 to about 100 ohm-meter. In some embodiments, Δr in the first conductive layer p-l (x) increases substantially with increasing distance from the busbar. In some embodiments, Δr in the first conductive layer p-l (x) increases hyperbolically as the distance from the busbar increases. In some embodiments, the average r of the device per unit width in the first and / or conductive layers n At least 0.1 ohm-meter, 0.3 ohm-meter, 1 ohm-meter, 3 ohm-meter, 10 ohm-meter, 30 ohm-meter, about 100 ohm-meter, or in the range of about 0.1 to about 0.3 ohm-meter, about 0.1 to about 1 ohm-meter, about 0.1 to about 3 ohm-meter, about 0.1 to about 10 ohm-meter, about 0.1 to about 30 ohm-meter, or about 0.1 to about 100 ohm-meter. In one embodiment, for Figure 15 The electrochromic device geometry shown, Δr in the first and / or second conductive layer p-l The nonlinearity of (x) can be compared by Δr in two different regions of the first and / or second conductive layers. p-lObserved by the average value of (x), where the first and second regions are non-overlapping regions on a single straight line oriented along the x-direction, and each region occupies at least 25% of the x-dimensional length of the first and / or second conductive layers. For example, in one such embodiment, Δr in the first region of the first and / or second conductive layers p-l The average value Δr of (x) avg1 p-l Δr in the second region of the first and / or second conductive layer p-l The average value Δr of (x) avg2 p-l The ratio is at least 0.1 ohm-meter, 0.3 ohm-meter, 1 ohm-meter, 3 ohm-meter, 10 ohm-meter, 30 ohm-meter, about 100 ohm-meter, or in the range of about 0.1 to about 0.3 ohm-meter, about 0.1 to about 1 ohm-meter, about 0.1 to about 3 ohm-meter, about 0.1 to about 10 ohm-meter, about 0.1 to about 30 ohm-meter, or about 0.1 to about 100 ohm-meter; wherein the first region and the second region are non-overlapping regions on a single straight line oriented along the x-direction, and each region occupies at least 25% of the x-dimensional length of the first and / or second conductive layer. In one embodiment, the nonlinearity of the resistance of the first and / or second conductive layer can be determined by comparing Φ(x)=r in two non-overlapping regions of the first and / or second conductive layers. pattern (x) / r linear The average value of Φ(x) can be observed, where both the first and second regions are defined by convex polygons, and each region occupies at least 25% of the surface area of ​​the conductive layer. For example, in one such embodiment, the average value of Φ(x) in the first region of the first and / or second conductive layers is Φ. avg1 (x), and the average value Φ(x) in the second region of the first and / or second conductive layer. avg2 The ratio of (x) is at least 0.1 ohm-meter, 0.3 ohm-meter, 1 ohm-meter, 3 ohm-meter, 10 ohm-meter, 30 ohm-meter, about 100 ohm-meter, or in the range of about 0.1 to about 0.3 ohm-meter, about 0.1 to about 1 ohm-meter, about 0.1 to about 3 ohm-meter, about 0.1 to about 10 ohm-meter, about 0.1 to about 30 ohm-meter, or about 0.1 to about 100 ohm-meter; wherein both the first and second regions are defined by non-overlapping convex polygons, and each region occupies at least 25% of the surface area of ​​the conductive layer. This can be referred to... Figure 15 The first conductive layer 22 includes convex polygons A1 and B1, each defining a non-overlapping region, and each region occupying at least 25% of the surface area of ​​the conductive layer 22; in one embodiment, the average value Φ(x) of the first region of the first conductive layer defined by convex polygon A1 is... avg1(x), and the average value Φ(x) in the second region of the first conductive layer defined by the convex polygon B1. avg2 The ratio of (x) is at least 0.1 ohm-meter, 0.3 ohm-meter, 1 ohm-meter, 3 ohm-meter, 10 ohm-meter, 30 ohm-meter, about 100 ohm-meter, or in the range of about 0.1 to about 0.3 ohm-meter, about 0.1 to about 1 ohm-meter, about 0.1 to about 3 ohm-meter, about 0.1 to about 10 ohm-meter, about 0.1 to about 30 ohm-meter, or about 0.1 to about 100 ohm-meter. As shown in the figure, convex polygon A1 is a triangle and convex polygon B1 is a square for illustrative purposes only; in practical applications, the first region can be defined by any convex polygon, and the second region can also be defined by any convex polygon. In one embodiment, the nonlinearity of the resistance of the first and / or second conductive layer can be determined by comparing Δr in two non-overlapping regions of the first and / or second conductive layers. p-l The average value of (x) is used for observation, where both the first and second regions are defined by convex polygons, and each region occupies at least 25% of the surface area of ​​the conductive layer. For example, in one such embodiment, Δr in the first region of the first and / or second conductive layer p-l The average value Δr of (x) avg1 p-l Δr in the second region of the first and / or second conductive layer p-l The average value Δr of (x) avg2 p-l The ratio is at least 0.1 ohm-meter, 0.3 ohm-meter, 1 ohm-meter, 3 ohm-meter, 10 ohm-meter, 30 ohm-meter, about 100 ohm-meter, or in the range of about 0.1 to about 0.3 ohm-meter, about 0.1 to about 1 ohm-meter, about 0.1 to about 3 ohm-meter, about 0.1 to about 10 ohm-meter, about 0.1 to about 30 ohm-meter, or about 0.1 to about 100 ohm-meter; wherein both the first and second regions are defined by non-overlapping convex polygons, and each region occupies at least 25% of the surface area of ​​the conductive layer. This can be referred to... Figure 15 The first conductive layer 22 includes convex polygons A1 and B1, each defining a non-overlapping region, and each region occupying at least 25% of the surface area of ​​the conductive layer 22; in one embodiment, Δr in the first region of the first conductive layer defined by convex polygon A1 p-l The average value Δr of (x) avg1 p-l (x), and Δr in the second region of the first conductive layer defined by the convex polygon B1 p-l The average value Δr of (x) avg2 p-lThe ratio of (x) is at least 0.1 ohm-meter, 0.3 ohm-meter, 1 ohm-meter, 3 ohm-meter, 10 ohm-meter, 30 ohm-meter, about 100 ohm-meter, or in the range of about 0.1 to about 0.3 ohm-meter, about 0.1 to about 1 ohm-meter, about 0.1 to about 3 ohm-meter, about 0.1 to about 10 ohm-meter, about 0.1 to about 30 ohm-meter, or about 0.1 to about 100 ohm-meter. As shown in the figure, convex polygon A1 is a triangle and convex polygon B1 is a square for illustrative purposes only; in practical applications, the first region can be defined by any convex polygon, and the second region can also be defined by any convex polygon. In one embodiment, the nonlinearity of the resistance of the first and / or second conductive layer can be determined by comparing r in two non-overlapping regions of the first and / or second conductive layers. n Observing the average value, where both the first and second regions are defined by convex polygons, and each region occupies at least 25% of the surface area of ​​the conductive layer. For example, in one such embodiment, r in the first region of the first and / or second conductive layer n The average value r avg1 n r in the second region of the first and / or second conductive layer n The average value r avg2 n The ratio is at least 0.1 ohm-meter, 0.3 ohm-meter, 1 ohm-meter, 3 ohm-meter, 10 ohm-meter, 30 ohm-meter, about 100 ohm-meter, or in the range of about 0.1 to about 0.3 ohm-meter, about 0.1 to about 1 ohm-meter, about 0.1 to about 3 ohm-meter, about 0.1 to about 10 ohm-meter, about 0.1 to about 30 ohm-meter, or about 0.1 to about 100 ohm-meter; wherein both the first and second regions are defined by non-overlapping convex polygons, and each region occupies at least 25% of the surface area of ​​the conductive layer. This can be referred to... Figure 15 The first conductive layer 22 includes convex polygons A1 and B1, each defining a non-overlapping region, and each region occupying at least 25% of the surface area of ​​the conductive layer 22; in one embodiment, the first region of the first conductive layer defined by convex polygon A1... n The average value r avg1 n , and r in the second region of the first conductive layer defined by the convex polygon B1 n The average value r avg2 nThe ratio is at least 0.1 ohm-meter, 0.3 ohm-meter, 1 ohm-meter, 3 ohm-meter, 10 ohm-meter, 30 ohm-meter, about 100 ohm-meter, or in the range of about 0.1 to about 0.3 ohm-meter, about 0.1 to about 1 ohm-meter, about 0.1 to about 3 ohm-meter, about 0.1 to about 10 ohm-meter, about 0.1 to about 30 ohm-meter, or about 0.1 to about 100 ohm-meter. As shown in the figure, convex polygon A1 is a triangle and convex polygon B1 is a square for illustrative purposes only; in practical applications, the first region can be defined by any convex polygon, and the second region can also be defined by any convex polygon. Refer again Figure 15 In some embodiments, the spatial non-uniformity and non-linearity of the resistance of the first conductive layer and the second conductive layer may be correlated. For example, a line segment X1-Y1 in the first conductive layer 22 may pass through the second electrode layer 21, the ion conductor layer 10, and the first electrode layer 20, and be projected onto the second conductive layer 23, the projection defining the line segment XY. Generally, if the resistance between the busbar in the first conductive layer 22 and a certain position on the line segment X1-Y1 is non-linear and substantially increases (i.e., the resistance increases substantially non-linearly along the resistance gradient curve from point X1 to point Y1), then the resistance between the busbar in the second conductive layer 23 and a certain position on the line segment XY is substantially decreases (i.e., the resistance decreases substantially non-linearly along the resistance gradient curve 54 from point X to point Y). The minimum length of the line segments XY and X1-Y1 is at least 1 cm, or, in the case of a rectangular substrate, the line segment length is at least 25% of the total length or width of the substrate. For example, the lengths of the line segments XY and X1-Y1 may be 2.5 cm, 5 cm, 10 cm, or 25 cm. Furthermore, line segments XY and X1-Y1 can be straight lines or curves. For example, in one embodiment, the resistance gradients in conductive layers 22 and 23 are non-zero constants with opposite signs (e.g., in the first conductive layer, the resistance increases approximately non-linearly along the direction from point X1 to point Y1; and decreases approximately non-linearly along the surface resistance gradient curve 54 from point X to point Y). As another example, in one embodiment, the substrates 24 and 25 are rectangular, and the resistance gradients in conductive layers 22 and 23 are non-zero constants with opposite signs (e.g., in the second conductive layer 23, the surface resistance increases approximately non-linearly along the gradient 54 from point X to point Y; and in the first conductive layer 22, the surface resistance decreases approximately non-linearly along the straight line containing line segment X1-Y1 from point X1 to point Y1). Example The following non-limiting embodiments are used to further illustrate this disclosure. Those skilled in the art should understand that the technical solutions disclosed in the following embodiments are methods that the inventors have discovered work well in the practice of this disclosure, and therefore can be considered as examples constituting the practice of this disclosure. However, those skilled in the art should understand, after combining the content of this disclosure, that many changes can be made to the specific embodiments disclosed without departing from the spirit and scope of this disclosure, and similar or analogous results can still be obtained. Example 1 Patterned conductive layer with hyperbolic resistance distribution Figure 16A It shows the relationship with Figure 2 , Figure 3A and Figure 3B The rectangular conductive layer shown has a similar geometry to the surface resistivity distribution along the resistivity gradient line. The device in this example is approximately 75 cm long and 130 cm wide. The busbar is located at x=0 and has a width (W) of 130 cm. In this example, the conductive layer is patterned to approximate... Figure 16A The sheet resistance distribution is shown. The desired sheet resistance varies from about 15 ohms / square near the busbar to about 450 ohms / square at the other end of the layer. Figure 16B An approximation was shown. Figure 16A The resistance of each set of scribe lines in the surface resistance distribution is shown. Each set of scribe lines is parallel to the busbar (i.e., along lines of equal resistance perpendicular to the resistance gradient lines), as shown... Figure 4 As shown. In this example, three different pitch scenes (i.e.) are drawn. Figure 4 The resistors in the 307 series (with markings below) have pitches of 3 mm, 5 mm, and 20 mm. In other cases, the pitch can be from 1 mm to 10 mm or 2.5 mm. As mentioned above, r n Defined as the added resistance of each etch group. Figure 16B The discrete points plotted represent the resistance of each rubbing group to electron flow in the x-direction (i.e., r mentioned above). n The ratio of width (W, as mentioned above) to the width per centimeter (cm). In other words, Figure 16B The discrete points plotted in the image represent the resistance of each scribed line group to electron flow in the x-direction (i.e., r as mentioned above) if the substrate width is 1 cm (i.e., W = 1 cm). n For a pitch of 3 mm, the resistance per centimeter of width of each graduation group in the x-direction varies from approximately 0 ohms-cm to approximately 120 ohms-cm. For a pitch of 5 mm, the resistance per centimeter of width of each graduation group in the x-direction varies from 0 ohms-cm to 200 ohms-cm. For a pitch of 20 mm, the resistance per centimeter of width of width of each graduation group in the x-direction varies from 0 ohms-cm to 615 ohms-cm. When the pitch between each graduation group (i.e., Figure 4 When the value of 307 is smaller, the total number of scribe lines on the substrate is greater, therefore the resistance (i.e., r) of each scribe line is higher. n It's smaller because only a small amount of resistance needs to be added to match each marking. Figure 16A The expected distribution is shown. Figure 16B The values ​​plotted are resistance per unit width of the layer; therefore, for a substrate 130 cm wide in this example, these values ​​need to be divided by 130 to obtain the absolute value of r. n Value (in ohms). Example 2 Patterned conductive layer with inverted hyperbolic resistance distribution Figure 17A It shows Figure 3A In the simple geometry described, the surface resistivity of the two substrates is distributed along a resistivity gradient line. The device in this example is approximately 75 cm long and 130 cm wide. The busbar on the top conductive layer (cathode in this example) is located at x = 0 cm, and the busbar on the bottom conductive layer (anode in this example) is located at approximately x = 75 cm. The width (W) of both substrates and conductive layers is 130 cm. In this example, both conductive layers are patterned to approximate... Figure 17A The sheet resistance distribution is shown. The desired sheet resistance varies from about 15 ohms / square to about 450 ohms / square. The surface resistivity distribution in this example follows R(x) = 1 / [a (x t -x)]、R'(x)=1 / (a The form of x) satisfies the relationship between the resistance distributions of the two base surfaces: R'(x) = R(x). (x t / x-1) (as discussed herein). As discussed herein, this relationship enables the device to form a more uniform potential between the two conductive layers throughout the entire device region, even if the busbar is located at the edge. Figure 17B An approximation was shown. Figure 17A The resistance of each set of scribe lines in the surface resistance distribution is shown. Each set of scribe lines on both substrates is parallel to the busbar (i.e., along lines of equal resistance perpendicular to the resistance gradient lines), as shown... Figure 4 As shown. In this example, the pitch between each set of scribe lines (i.e., Figure 4 The 307 in the figure is 5 mm. Figure 17B The discrete points plotted represent the resistance of each rubbing group to electron flow in the x-direction (i.e., r mentioned above). n The resistance is the ratio of the width of the substrate per unit centimeter to the resistance of the etched lines (i.e., the resistance when W = 1 cm if the substrate width is 1 cm). The resistance per unit centimeter in the x-direction varies from approximately 0 ohms-cm to approximately 200 ohms-cm. Figure 17BThe values ​​plotted are resistance per unit width of the layer; therefore, for a substrate 130 cm wide in this example, these values ​​need to be divided by 130 to obtain the absolute value of r. n Value (in ohms). Example 3 Electrochromic devices with patterned conductive layers Electrochromic devices with uniform conductive layers exhibit an iris effect when switching from a faded to a dark state, where the transmittance changes over time; that is, the switching rate differs between the center and the edges of the device. In this example, the uniform device is approximately 75 cm long and 130 cm wide. The busbar on the top conductive layer (cathode in this example) is located at x=0 cm, and the busbar on the bottom conductive layer (anode in this example) is located at approximately x=75 cm. The width (W) of both substrates and the conductive layer is 130 cm. Figure 18 This illustrates the use of a patterned conductive layer (with) as shown in Example 2. Figure 14B The electrochromic device (with resistors in each etched group) exhibits a change in transmittance over time as it switches from a fading state to a dark state. In this example, the patterned device is approximately 75 cm long and 130 cm wide. Buses on the top conductive layer (cathode in this example) are located at x = 0 cm, and buses on the bottom conductive layer (anode in this example) are located at approximately x = 75 cm. The width (W) of both substrates and conductive layers is 130 cm. The figure shows the transmittance over time at two different locations: one near the device center and the other near one of the buses, approximately 2 cm from the device edge. Lighter lines represent transmittance at the device center, and darker lines represent transmittance near the device edge. The device begins switching at a "step time" of approximately 0 seconds. Figure 18 The transmittance in the image was normalized relative to the transmittance at the center of the device in its fully faded state. The transmittance near the device edges transitioned from the faded state to a dark state with transmittance below 10% within approximately 120 seconds. The transmittance at the center of the device transitioned from the faded state to a dark state with transmittance below 10% within approximately 140 seconds. Figure 19 The diagram illustrates the difference in transmittance near the center and near the edge of the uniform electrochromic device and patterned electrochromic device described in this example. In the figure, the transmittance difference between the center and the edge is normalized relative to the maximum difference under uniform conditions; this is termed "normalized iris contrast". Figure 19The data shows that the patterned device exhibits significantly better optical uniformity during switching than the uniform device. When the center-edge non-uniformity reaches its peak in the uniform case (i.e., approximately 150 seconds after switching from the faded state to the dark state), the normalized iris effect of the patterned device is less than 20% of that in the uniform case. Example 4 Electrochromic devices with patterned conductive layers Electrochromic devices with uniform conductive layers exhibit an iris effect when switching from a faded to a dark state, where the transmittance changes over time; that is, the switching rate differs between the center and the edges of the device. In this example, the uniform device is approximately 75 cm long and 130 cm wide. The busbar on the top conductive layer (cathode in this example) is located at x=0 cm, and the busbar on the bottom conductive layer (anode in this example) is located at approximately x=75 cm. The width (W) of both substrates and the conductive layer is 130 cm. The patterned electrochromic device employs a patterned conductive layer similar to that shown in Example 2. One patterned device has a patterned conductive layer with an approximate hyperbolic resistance distribution, ranging from approximately 10 ohms / square to approximately 300 ohms / square; the other patterned device has a patterned conductive layer with an approximate hyperbolic resistance distribution, ranging from approximately 10 ohms / square to approximately 1000 ohms / square. The patterned device in this example is also approximately 75 cm long and approximately 130 cm wide. Busbars on the top conductive layer (cathode in this example) are located at x=0 cm (along the length direction), and busbars on the bottom conductive layer (anode in this example) are located at approximately x=75 cm (along the length direction). The width (W) of both substrates and conductive layers is 130 cm. In this example, the 10-300 ohms / square device has a patterned conductive layer on its top substrate (cathode side) to approximate... Figure 20A The “10-300” planar resistance distribution is shown, where “position (mm)” is along the length of the device. In this example, the 10-1000 ohm / s² device has a patterned conductive layer on its top substrate (cathode side) to approximate… Figure 20A The “10-1000” surface resistance distribution is shown, where the “position (mm)” is along the length of the device. The bottom conductive layer (anode side) is also patterned to approximate the desired shape. Figure 20A The same surface resistance distribution is shown, but the x-axis is reversed (similar to...). Figure 17A and Figure 17B (As shown). Figure 20B The following diagram shows the resistance of various etched groups for devices ranging from 10-300 ohms / square and 10-1000 ohms / square, where the etched lines approximate... Figure 20A The surface resistivity distribution is shown. Similarly, Figure 20B The discrete points plotted represent the resistance of each rubbing group to electron flow in the x-direction (i.e., r mentioned above). nThe resistance is the ratio of the width of the substrate per unit centimeter to the resistance of the etched lines (i.e., the resistance when W = 1 cm if the substrate width is 1 cm). The resistance per unit centimeter in the x-direction varies from about 0 ohms-cm to about 200 ohms-cm or 500 ohms-cm. Figure 20B The values ​​plotted are resistance per unit width of the layer; therefore, for a substrate 130 cm wide in this example, these values ​​need to be divided by 130 to obtain the absolute value of r. n Value (in ohms). Figure 21 The figure shows the difference in transmittance near the center and near the edge of a uniform electrochromic device and two different patterned electrochromic devices. In the figure, the difference in transmittance between the center and the edge is normalized relative to the maximum difference in the uniform case, which is called the "normalized iris effect". Figure 21 The data shows that patterned devices exhibit better optical uniformity than uniform devices during the switching process. When the center-edge non-uniformity reaches its peak under uniform conditions (i.e., approximately 100 seconds after switching from a faded to a dark state), the normalized iris effect of a patterned device with an approximate 10-300 ohms / square resistivity distribution is approximately 40% of that under uniform conditions. When the center-edge non-uniformity reaches its peak under uniform conditions (i.e., approximately 100 seconds after switching from a faded to a dark state), the normalized iris effect of a patterned device with an approximate 10-1000 ohms / square resistivity distribution is approximately 25% of that under uniform conditions. Example 5 Electrochromic devices with visually perceptible patterns Figures 22A to 22D An image is shown of an electrochromic device exhibiting a visually perceptible pattern during switching. The electrochromic device in this example is a patterned electrochromic device employing a patterned conductive layer similar to that shown in Example 2. The device in this example has a patterned conductive layer with an approximately hyperbolic resistance distribution, ranging from approximately 10 ohms / square to approximately 1000 ohms / square. In this example, the 10-1000 ohms / square device has a patterned conductive layer on its top substrate (cathode side) to approximate... Figure 20A The “10-1000” surface resistance distribution is shown, where the “position (mm)” is along the length of the device. The bottom conductive layer (anode side) is also patterned to approximate the surface resistance distribution. Figure 20A The same surface resistance distribution is shown, but the x-axis is reversed (similar to...). Figure 17A and Figure 17B (As shown). Figure 20B The following diagram shows the resistance of various scribed groups for devices ranging from 10 to 1000 ohms / square, these scribed groups approximating... Figure 20A The surface resistance distribution is shown. Furthermore, the device described in this embodiment has a periodic offset (e.g., Figure 11B Component 309 in the middle), whose value is approximately the period (e.g., Figure 11B Half of component 305 in the middle. Figure 22A Images (optical photographs) of the device during the fading process (i.e., switching from a state with low transmittance to a state with high transmittance) are shown, indicating that the optical transmittance of the device varies at different locations during the fading process. Figure 22B Images (optical photographs) of the device during the coloring process (i.e., switching from a state with high transmittance to a state with low transmittance) are shown, indicating that the optical transmittance of the device varies at different locations during the coloring process. Figure 22C and Figure 22A It's the same image, but with increased contrast to highlight the pattern. Figure 22D yes Figure 22C The magnified area. In this embodiment, the visually perceptible pattern of the device is generally periodic, and can be described as a honeycomb pattern or a checkerboard pattern. Example 6 Figure 23 An example of a non-rectangular electrochromic device is shown 120 seconds after it begins to switch from a fading state to a dark state. The device is a right-angled trapezoid with an angle of approximately 45°, a long side length of 2100 mm, a short side length of 600 mm, and a height of approximately 1500 mm. Figure 23 As shown. In this embodiment, the conductive layer of the device is a TCO material with a sheet resistivity of approximately 10 ohms / square. The device in this example has no resistance gradient in the conductive layer, and significant switching non-uniformity can be observed after 120 seconds; that is, the device switches faster (darker color) in region N10 near the short side of the trapezoid. Region N20 is the area containing the detection voltage pad. The sense voltage is measured using the sense voltage pad described herein to drive the device. Specifically, a constant voltage and current are applied until the sense voltage (measured using the sense voltage pad) reaches a predetermined threshold (or sense voltage limit) of 1.5V. Then, a variable voltage and current are applied to maintain the sense voltage at or below the predetermined threshold. Example 7 Figure 24A and Figure 24B An example of an electrochromic device is shown 120 seconds after it begins to switch from a fading state to a dark state. The device in this example has a resistance gradient in the conductive layer that varies along the x-direction but remains constant along the y-direction. This resistance gradient is formed by scribe lines in the conductive layer, which contains a transparent conductive oxide (TCO) material with a sheet resistivity of approximately 10 ohms / square (before the scribe lines). Some switching non-uniformity is observed after 120 seconds. For example, the device switches faster (darker color) in regions O10 and P10 near the short side of the trapezoid. Figure 24A In the device, the anode busbar is longer than the cathode busbar, and there is also obvious non-uniformity in the O20 and O30 regions near the diagonal edge. Figure 24BThe device in this circuit has a cathode busbar that is longer than its anode busbar. Regions O40 and P40 are areas containing the sense voltage pads. The device in this embodiment is similar in size to the device described in Embodiment 6, and is driven using the same driving method. Example 8 Figure 25A and Figure 25B An example of an electrochromic device is shown 120 seconds after it begins to switch from a fading state to a dark state. The device in this example has a resistance gradient that varies along both the x and y directions in the conductive layer. This resistance gradient is formed by scribe lines in the conductive layer, which contains a TCO material with a sheet resistivity of approximately 10 ohms / square (before the scribe lines). These devices exhibit significantly better uniformity during the switching process than the devices in Examples 6 and 7. However, some switching non-uniformity is still observed after 120 seconds, for example, the device switches faster (darker color) near the shorter side of the trapezoid. Figure 25A In the device, the anode busbar is longer than the cathode busbar; Figure 25B The device in this embodiment has a cathode busbar that is longer than the anode busbar. The device in this embodiment is similar in size to the device described in Embodiment 6 and is driven using the same driving method. In this embodiment 8, the resistance gradient in the conductive layer of the device is further configured to form a region with the maximum local battery potential (or voltage drop), and the detection voltage pad is aligned with this region of maximum local battery potential. Therefore, Figure 25A and Figure 25B The devices in it may be more than Figure 23 , Figure 24A and Figure 24B The components in this area are less prone to damage. Regions Q40 and R40 are areas containing the sense voltage pads, and these areas also contain the maximum local cell potential (formed by the resistance gradient). In this embodiment 8, the resistance gradient in the conductive layer of the device is formed by a group of scribe lines parallel to the busbar. Figure 25C and Figure 25D Examples of etched patterns are shown, illustrating how the etched pattern can be varied along the x and y directions to create regions of maximum resistance gradient and voltage. In this example, the length of the etched segment (e.g., Figure 5 , Figure 8 , Figure 13A and Figure 13B The 304x in the figure varies along both the x and y directions to achieve a surface resistance gradient in the conductive layer of the device. For example, Figure 25CAs shown, the scribe line segment has a first length near the right-angle corner of the edge of the trapezoidal long side busbar; the scribe line segment has a longer length near the right-angle corner of the edge of the trapezoidal long side busbar; and the scribe line segment has a shorter length at a position further away from the right-angle corner of the edge of the trapezoidal long side busbar. Figure 25D As shown, the scribe line segment has a first length near the right-angle corner of the edge of the trapezoidal short-side busbar; and a longer length near the obtuse-angle corner of the edge of the trapezoidal short-side busbar. Figure 25D It is also shown that the scribe line segment has a first length near the obtuse corner of the edge of the trapezoidal short side busbar; and the scribe line segment has a longer length at a position further away from the obtuse corner of the edge of the trapezoidal short side busbar. Figure 26A and Figure 26B Top views of the detection voltage pads U10 and V10 on the anode and cathode sides of the devices used in Examples 6-8 are shown respectively. Regions U20 and V20 show the areas of detection voltage terminals used to couple the detection voltage pads to a flexible circuit, which is electrically connected to a driver. The detection voltage pads U10 and V10 and the detection voltage terminals U20 and V20 in this example can be configured to measure the local cell potential at corresponding detection voltage measurement locations U30 and V30 within the electrochromic device. The detection voltage pads U10 and V10 and the detection voltage terminals U20 and V20 in this example are... Figure 1B and Figure 1C The detection voltage pads D40 and E40 shown are similar. Figure 27A and Figure 27B The time series of the electrochromic window during the transition from the faded state to the dark state are shown. Figure 27A The device in Example 6 is shown to change over time. Figure 27B The device in Example 8 is shown to change over time. The device in Example 8 has a resistance gradient that varies along the x and y directions, and this resistance gradient is configured to form a region with the maximum local battery potential (or voltage drop), and the detection voltage pad is aligned with this region with the maximum local battery potential, thus resulting in faster and more uniform switching speed. Figure 23 and Figure 27A The device shown (without a resistance gradient) has a sense voltage pad near the short busbar. The local cell potential in this area rapidly reaches the sense voltage limit, causing a decrease in the voltage (or bias) applied to the busbar. Meanwhile, the voltage drop in the central region of the device is lower, resulting in slow and uneven switching. In contrast, Figure 25A , Figure 25B and Figure 27BThe devices shown are designed with a resistance gradient that aligns the area of ​​maximum local cell potential with the detection voltage pad, enabling faster and more uniform switching. This gradient provides a more uniform local cell potential across the entire device, maintaining a higher local cell potential in the central region even after the detection voltage limit is reached, resulting in faster and more uniform switching.

Claims

1. An electrochromic device, comprising: First transparent substrate and second transparent substrate; A first conductive layer, having a first resistance gradient, is disposed on the inner surface of the first transparent substrate; A second conductive layer, having a second resistance gradient, is disposed on the inner surface of the second transparent substrate; The first busbar is in contact with the first conductive layer; The second busbar is in contact with the second conductive layer; The first detection voltage pad is disposed on the inner surface of the first transparent substrate and configured to measure the local battery potential at the detection voltage measurement position within the electrochromic device. The first resistance gradient and the second resistance gradient are configured to form a region containing the maximum local battery potential, which approximately coincides with the location of the detected voltage measurement.

2. The electrochromic device according to claim 1, wherein, The first detection voltage pad is located near the region containing the maximum local cell potential, such that the detection voltage measured at the first detection voltage pad is approximately equal to the maximum local cell potential.

3. The electrochromic device according to claim 1, wherein the electrochromic device further includes a first detection voltage terminal, the first detection voltage terminal being electrically coupled to a first detection voltage pad, wherein the busbar is coupled to a driver controlling the electrochromic device, and wherein the first detection voltage terminal is individually coupled to the driver, such that the driver can select the first busbar, the second busbar, and the detection voltage terminal respectively.

4. The electrochromic device according to claim 1, wherein, The first resistance gradient includes a set of resistances for the current flowing in the first conductive layer, which varies with position as a function. Furthermore, the second resistance gradient includes a set of resistances for the current flowing in the second conductive layer, which varies with the position function.

5. The electrochromic device according to claim 1, further comprising a second detection voltage pad, the second detection voltage pad being in contact with the second conductive layer, wherein the second detection voltage pad is configured to measure the local battery potential at the detection voltage measurement location within the electrochromic device.

6. The electrochromic device according to claim 1, wherein, The electrochromic device is non-rectangular.

7. The electrochromic device according to claim 1, wherein, The electrochromic device is trapezoidal (e.g., right trapezoid), triangular, pentagonal, circular, elliptical, semi-circular, or a composite linear shape.

8. The electrochromic device according to claim 1, wherein, The first transparent substrate and the second transparent substrate are coupled in the following orientation: the first busbar is located at one edge of the electrochromic device, and the second busbar is located at the opposite edge of the electrochromic device.

9. The electrochromic device according to claim 1, wherein, The electrochromic device is non-rectangular and includes two parallel busbars.

10. The electrochromic device according to claim 1, wherein, The electrochromic device is non-rectangular and includes two non-parallel busbars.

11. The electrochromic device according to claim 1, wherein, The first conductive layer is patterned by a first set of scribe lines, which determines the resistance to the current flowing through the first conductive layer. The second conductive layer is patterned by a second set of scribe lines, which determines the resistance to the current flowing through the second conductive layer. The first and second etched line groups are configured to align the detected voltage measurement location with the region containing the maximum local battery potential.

12. The electrochromic device according to claim 11, wherein, The first busbar and the second busbar are parallel to each other; The first conductive layer and / or the second conductive layer are patterned by a plurality of scribed lines that are substantially parallel to the busbar; The adjacent scribe line groups determine the resistance of electron flow through the adjacent scribe line groups in the first conductive layer and / or the second conductive layer in a direction substantially perpendicular to the corresponding first busbar and / or second busbar.

13. The electrochromic device according to claim 11, wherein, The scribe line group consists of a series of line segments, which are gaps in the corresponding first conductive layer and / or second conductive layer; wherein the length, period, valve width, and offset between the line segments in adjacent scribe line groups determine the resistance of electron flow through adjacent scribe line groups in the first conductive layer in a direction substantially perpendicular to the first busbar.

14. The electrochromic device according to claim 11, wherein, The electrochromic device is non-rectangular and includes two parallel busbars.

15. The electrochromic device according to claim 11, wherein, The electrochromic device is non-rectangular and includes two non-parallel busbars.

16. The electrochromic device according to claim 1, wherein, The first conductive layer or the second conductive layer has a thickness gradient.

17. The electrochromic device according to claim 1, wherein, The first conductive layer or the second conductive layer has an electrical performance gradient.

18. The electrochromic device according to claim 1, wherein, The first transparent conductive layer includes a transparent conductive oxide, a metal coating, a nanostructure, a conductive metal nitride, or a composite conductor.

19. A method for controlling an electrochromic device, comprising: A constant supply current is applied to the electrochromic device using at least two busbars; The amount of charge transferred to the electrochromic device is determined as a function of time and the current supplied to the electrochromic device; The detection voltage is measured using the first detection voltage pad of the electrochromic device; In response to the detection voltage reaching the detection voltage limit, the application of the constant supply current is stopped; In response to the detection voltage reaching the detection voltage limit, a variable voltage or variable current is applied to the electrochromic device using the busbar to maintain the detection voltage at the detection voltage limit; In response to the determined charge amount reaching the target charge amount, the application of the variable voltage or the variable current to the electrochromic device is terminated; The electrochromic device includes two conductive layers, each having a resistance gradient. The detection voltage pad is coupled to one of the plurality of conductive layers and configured to measure the local battery potential at the detection voltage measurement location within the electrochromic device. The resistance gradient is configured to form a region containing the maximum local cell potential, which roughly coincides with the location where the detected voltage is measured.

20. A method comprising: A constant supply current is applied to an electrochromic device, wherein the electrochromic device comprises: First transparent substrate and second transparent substrate; A first conductive layer is disposed on the inner surface of the first transparent substrate, wherein the first conductive layer includes a first resistance gradient for a current flowing in the first conductive layer, the first resistance gradient varying as a function of position. A second conductive layer is disposed on the inner surface of the second transparent substrate, and the second conductive layer includes a second resistance gradient for current flowing in the second conductive layer, the second resistance gradient varying as a function of position. The first busbar is in contact with the first conductive layer; The second busbar is in contact with the second conductive layer; The first detection voltage pad is disposed on the inner surface of the first transparent substrate and configured to measure the local battery potential at the detection voltage measurement position within the electrochromic device. Wherein, the first resistance gradient and the second resistance gradient are configured to form a region containing the maximum local battery potential, the region roughly coinciding with the location of the detected voltage measurement; The constant power supply current is applied to the electrochromic device using the first busbar and the second busbar. The amount of charge transferred to the electrochromic device is determined as a function of time and the current supplied to the electrochromic device; The detection voltage is measured using the first detection voltage pad of the electrochromic device; In response to the detection voltage reaching the detection voltage limit, the application of the constant supply current is stopped; In response to the detection voltage reaching the detection voltage limit, a variable voltage or variable current is applied to the electrochromic device using the busbar to maintain the detection voltage at the detection voltage limit; In response to the determined charge amount reaching the target charge amount, the application of the variable voltage or the variable current to the electrochromic device is terminated.

21. A method comprising: The step of forming an electrochromic device includes: A first conductive layer is formed, the first conductive layer being disposed on the inner surface of a first transparent substrate, wherein the first conductive layer includes a first resistance gradient for a current flowing in the first conductive layer, the first resistance gradient varying as a position function. A second conductive layer is formed, the second conductive layer is disposed on the inner surface of the second transparent substrate, the second conductive layer includes a second resistance gradient for the current flowing in the second conductive layer, the second resistance gradient varying as a position function; A first busbar is formed, and the first busbar is in contact with the first conductive layer; A second busbar is formed, and the second busbar is in contact with the second conductive layer; A first detection voltage pad is formed, which is disposed on the inner surface of the first transparent substrate and configured to measure the local battery potential at the detection voltage measurement location within the electrochromic device. Wherein, the first resistance gradient and the second resistance gradient are configured to form a region containing the maximum local battery potential, the region roughly coinciding with the location of the detected voltage measurement; A constant supply current is applied to the electrochromic device using the first busbar and the second busbar. The amount of charge transferred to the electrochromic device is determined as a function of time and the current supplied to the electrochromic device; The detection voltage is measured using the first detection voltage pad of the electrochromic device; In response to the detection voltage reaching the detection voltage limit, the application of the constant supply current is stopped; In response to the detection voltage reaching the detection voltage limit, a variable voltage or variable current is applied to the electrochromic device using the busbar to maintain the detection voltage at the detection voltage limit; In response to the determined charge amount reaching the target charge amount, the application of the variable voltage or the variable current to the electrochromic device is terminated.

22. A method for controlling an electrochromic device, comprising: A constant supply current is applied to the electrochromic device using at least two busbars; The detection voltage is measured using the first detection voltage pad of the electrochromic device; In response to the detection voltage reaching the detection voltage limit, the application of the constant supply current is stopped; In response to the detection voltage reaching the detection voltage limit, a variable voltage or variable current is applied to the electrochromic device using the busbar to maintain the detection voltage at the detection voltage limit; In response to a triggering condition, the application of the variable voltage or the variable current to the electrochromic device is terminated, wherein the triggering condition may optionally include a determined charge amount reaching a target charge amount, reaching a time limit, reaching a current limit, or the current flow falling below a predetermined threshold. The electrochromic device includes two conductive layers, each having a resistance gradient. The detection voltage pad is coupled to one of the plurality of conductive layers and configured to measure the local battery potential at the detection voltage measurement location within the electrochromic device. The resistance gradient is configured to form a region containing the maximum local battery potential, which approximately coincides with the location where the detection voltage is measured.

23. A method comprising: The resistance gradient of the conductive layer in an electrochromic device with two busbars is modeled using a finite element model. The modeling steps include: Starting from the initial resistance gradient of the conductive layer; Define a first region containing the pads for detecting voltage; A target local battery potential map is provided, which includes the target local battery potential value in the active region of the electrochromic device and the maximum local battery potential in the first region. The final resistance gradient of the conductive layer is generated using the finite element model to form a final local cell potential map, wherein the finite element model minimizes the difference between the final local cell potential map and the target local cell potential map, and wherein the final resistance gradient includes a gradient in the x-direction that is approximately perpendicular to the busbar of the electrochromic device, and a gradient in the y-direction that is perpendicular to the x-direction.

24. The method according to claim 23, wherein, The initial resistance gradient of the conductive layer includes a gradient in the x-direction, but no gradient in the y-direction.

25. The method of claim 23, further comprising forming a resistance gradient in the conductive layer of the electrochromic device.

26. The method of claim 25, wherein, The conductive layer comprises a transparent conductive oxide material, and the formation of the resistance gradient includes forming a etched pattern using a laser.

27. The method according to claim 25, wherein, The conductive layer comprises a transparent conductive oxide material, and wherein forming the resistance gradient comprises forming the conductive layer having a varying thickness.

28. The method according to claim 25, wherein, The conductive layer comprises a transparent conductive oxide material, and wherein the step of forming a resistance gradient includes forming the conductive layer having varying electrical properties.

29. The method according to claim 25, further comprising: The conductive layer is formed on both substrates; A first electrochromic layer is formed on one of the plurality of conductive layers; The two substrates are coupled together using an ion-conductive layer, such that the plurality of conductive layers are opposite to each other and the two substrates are located on the outside.

30. The method of claim 29, further comprising forming a second electrochromic layer on another of the conductive layers prior to coupling the substrates together.

31. The method according to claim 23, wherein, The initial resistance gradient of the conductive layer is generated analytically or using a discrete numerical method.

32. The method according to claim 23, wherein, The final resistance gradient is generated for different external bias voltages applied to the multiple busbars of the electrochromic device.

33. The method according to claim 23, wherein, The multiple busbars are parallel to each other.

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