Position detection system, member to be detected, and magnetic detection device

Abstract

The invention provides a position sensor which is small in size and high in detection precision. A position detection system is provided with: a detection device (110) having a magnetic sensor (112) for detecting changes in a magnetic field; and a target member (120) disposed so as to be capable of facing the magnetic sensor (112) at a predetermined interval and so as to be capable of relative movement with respect to the magnetic sensor (112). The target member (120) or the detection device (110) is provided with a magnet film (10) of 300 [mu] m or less, and the magnet film (10) is disposed on the surface of the base material layer (1).

Description

Technical Field

[0001] This disclosure relates to a position detection system, a detection object component for the system, and a magnetic detection device. Background Technology

[0002] For example, as shown in Patent Document 1 below, a position detection system combining a magnet and a magnetic sensor is known. As for the magnets used in existing position detection systems, bulk magnets such as sintered magnets, which can inexpensively generate large magnetic fields, are widely used. However, in recent years, there has been a demand for miniaturization of various devices, and there are limits to the miniaturization of bulk magnets in this regard.

[0003] On the other hand, although magnetic films can be made by vacuum deposition, their thickness is very thin, less than a few μm. Therefore, the magnetic field generated is small and relatively susceptible to noise, which reduces the accuracy of the detectable position.

[0004] Existing technical documents

[0005] Patent documents

[0006] Patent Document 1: Utility Model Registration No. 3189365 Summary of the Invention

[0007] The technical problem that the invention aims to solve

[0008] This disclosure was made in view of this actual situation, and its purpose is to provide a miniaturized position detection system with high detection accuracy, a detection object component for the system, and a magnetic detection device.

[0009] Technical solutions for solving technical problems

[0010] To achieve the above objectives, the position detection system disclosed herein has the following features:

[0011] The detection device includes a magnetic sensor for detecting changes in the magnetic field; and

[0012] An object component, which is positioned face-to-face with the magnetic sensor at a predetermined interval and is movable relative to the magnetic sensor,

[0013] The object component or the detection device has a magnetic film with a thickness of 10 μm to 300 μm, and the magnetic film is placed on the surface of the substrate layer.

[0014] In one aspect of the position detection system disclosed herein, because the target component or detection device has a magnetic film with a thickness of 10 μm to 300 μm, the position detection system can be made thinner and smaller. Furthermore, because the magnetic film is placed on the surface of the substrate layer, it can be manufactured, for example, by a molten salt impregnation method or a method using molten salt impregnation, resulting in a stronger magnetic field that is less susceptible to noise, thus improving the positional accuracy. Additionally, the thickness of the magnetic film is preferably 15 μm or more, but can also be 20 μm or more, 30 μm or more, 50 μm or more, or 50 to 200 μm. However, if the magnetic film is too thin, the detection sensitivity tends to decrease.

[0015] Preferably, the magnet film has an SmCo5 film. The SmCo5 film can be easily formed in a relatively thin layer (less than 300 μm) and has high magnetization, for example, by reacting the surface of a substrate layer made of Co (used in the concept of including a substrate) with a reaction solution containing an Sm source and a molten salt and then performing heat treatment.

[0016] Sm2Co can also be present between the magnet film and the substrate layer. 17 Membrane. Sm2Co 17 The membrane and substrate layer can function as part of the magnetic yoke of the magnet membrane.

[0017] Preferably, the easy magnetization axis of the magnet film is oriented perpendicular to the surface of the substrate layer, and the orientation degree of the easy magnetization axis is 90% or more. This configuration improves the magnetic properties of the magnet film.

[0018] The surface of the magnetic membrane of the object component can also be magnetized in such a way that different magnetic pole surfaces alternately appear along the relative movement direction. With this configuration, when the object component moves relative to the magnetic sensor, the magnetic sensor can detect the periodic changes in the magnetic field generated by the alternating different magnetic pole surfaces, and accurately detect the relative position of the magnetic sensor relative to the object component (including the amount of movement and its presence or absence) based on the periodic changes in the magnetic field.

[0019] The surface of the magnetic membrane of the object component may also have a groove pattern with grooves of a predetermined depth appearing at predetermined intervals and in a predetermined pattern along the relative movement direction, and magnetized in such a way that the same magnetic pole surfaces appear. When the object component moves relative to the magnetic sensor, the magnetic sensor detects the periodic change of the magnetic field as the position of the groove changes. Therefore, even without multipole magnetization of the magnetic membrane, the relative position (including the amount of movement) of the magnetic sensor relative to the object component can be accurately detected.

[0020] Alternatively, the surface of the substrate layer may have a repeating raised and recessed pattern corresponding to the groove pattern. For example, in the molten salt impregnation method or a method using the molten salt impregnation method, it is easy to form a magnet film of approximately constant thickness along the raised and recessed pattern formed on the surface of the substrate layer, and the groove pattern can be easily formed on the surface of the magnet film without processing the surface of the magnet film.

[0021] The surface of the magnetic film of the object component may also have a groove pattern in which grooves of a specified depth appear at specified intervals and in a specified pattern along the relative movement direction, and magnetized in a manner in which different magnetic pole surfaces appear alternately corresponding to the groove pattern.

[0022] Alternatively, the magnet membrane of the object component may also have multiple partial magnet membranes arranged intermittently at predetermined intervals along the relative movement direction.

[0023] The surface of the object component located between the adjacent partial magnet films may also have a surface composed of a component that does not substantially contain any of the elements constituting the partial magnet films. For example, the partial magnet films may contain rare earth elements, but the surface of the object component located between the partial magnet films may also substantially not contain rare earth elements.

[0024] Furthermore, "substantially not containing" means that the surface of a magnetic material may contain elements within a range that does not form a magnetic film, for example, less than 1% by mass. The surface of the object component located between partial magnetic films may also be the surface of the substrate layer. Whether rare earth elements or other elements are substantially present can be determined, for example, by using an energy dispersive X-ray spectroscopy (EDS) analyzer.

[0025] The surfaces of the partial magnet and the magnetic body can also be substantially flush planes or curved surfaces. This configuration allows, for example, a smooth surface to be made of the intended object being position-detected. For example, it can be applied to position detection of parts with smooth surfaces, such as robotic arms. Furthermore, "substantially flush" means that, depending on the application of the position detection system, it can also have slight irregularities, for example, irregularities with a sufficiently small impact on detection accuracy.

[0026] The surface of the object component located between the adjacent partial magnet films may also have a diffusion-suppressing surface, which suppresses the diffusion of elements constituting the partial magnet films. By using diffusion-suppressing components, partial magnet films arranged at predetermined intervals along the relative movement direction can be easily formed without processing the surface of the magnet films.

[0027] The surface of the partial magnet film may also protrude beyond the suppression surface. By using a diffusion suppression component, partial magnet films arranged at predetermined intervals along the relative movement direction can be easily formed without processing the surface of the magnet film.

[0028] The surface of the magnetic film of the object component may also have a groove pattern in which grooves of a predetermined depth and at predetermined intervals appear along the relative movement direction in a predetermined pattern. Alternatively, the predetermined depth of these grooves may be, for example, 0.02 times, 0.04 times, 0.2 times, or 1 times the width of the groove, and the portion of the magnetic film located at the top of the protrusion is magnetized in such a way that the same magnetic pole surface appears, and the protrusion is located between the grooves. The grooves may be formed on the magnetic film or on the substrate. When the grooves are formed on the substrate, the predetermined depth of the grooves is preferably, for example, 1 times or more the width of the groove.

[0029] When the depth of the groove is greater than the width of the groove, the magnetic field generated by the portion of the magnet film located at the top of the protrusion is easily detected by the magnetic sensor, while the magnetic field generated from the bottom or sidewall of the groove is difficult to detect by the magnetic sensor. Therefore, the same effect as the partial magnet films arranged at predetermined intervals along the relative movement direction can be achieved. Furthermore, when the depth of the groove formed in the magnet film is greater than or equal to the thickness of the magnet film, it becomes the same structure as the partial magnet films arranged at predetermined intervals along the relative movement direction.

[0030] The detection device may also have a magnetic component made of a magnetic material. Alternatively, the magnetic film may be formed on at least a portion of the surface of the magnetic component. The magnetic component may also serve as a substrate layer.

[0031] The object component may also have element components, which have a groove pattern on their surface with grooves of a predetermined depth and at predetermined intervals along the relative movement direction. The surface of the element components is preferably made of a magnetic material. With this configuration, the object component does not possess a magnetic film, allowing the magnetic sensor to easily detect changes in the magnetic field from the magnetic film of the detection device passing through the magnetic component on the detection side of the object component along the relative movement direction. The magnetic sensor can periodically detect changes in the magnetic field formed between the magnetic film of the detection device and the detection surface of the object component along the relative movement direction, improving position detection accuracy.

[0032] The detection device may also have the magnetic component disposed on the opposite side of one side of the circuit board on which the magnetic sensor is disposed.

[0033] The surface of the magnet film can also be magnetized in a manner in which different magnetic pole surfaces alternate along the relative movement direction, or it can be magnetized in one direction.

[0034] Preferably, the length of the magnetic component along the relative movement direction is approximately an integer multiple of half the sum of the width of the protrusion located between adjacent slots of the target component and the width of the recess corresponding to the slot. With this configuration, the magnetic sensor can effectively detect changes in the magnetic field formed between the magnetic film of the detection device and the detection surface of the target component along the relative movement direction, thus improving position detection accuracy.

[0035] The magnetic component may also have opposing recesses that are positioned at predetermined intervals relative to the recesses of the target component, and a pair of opposing protrusions located on either side of the opposing recesses along the relative movement direction. Alternatively, the magnetic film may be provided on the surface of one opposing protrusion, and the magnetic sensor may be provided on the other opposing protrusion.

[0036] With this configuration, the magnetic sensor can effectively detect changes in the magnetic field formed between the magnetic film of the detection device and the detection surface of the target component along the relative movement direction, thus improving position detection accuracy. Furthermore, this configuration does not reduce detection accuracy, and allows the magnetic portion of the magnetic film and the magnetic portion where the magnetic sensor is located to be separated at a predetermined interval along the relative movement direction.

[0037] The magnetic component may also have opposing recesses that are positioned at predetermined intervals relative to the recesses of the target component, and a pair of opposing protrusions located on either side of the opposing recesses along the relative direction of movement. Alternatively, the magnetic film may be provided on the surface of one of the opposing protrusions, and the magnetic sensor may be disposed on the magnetic film. Preferably, the top of the other opposing protrusion is positioned at approximately the same height as the magnetic sensor.

[0038] With this configuration, the magnetic sensor can also effectively detect changes in the magnetic field formed between the magnetic film of the detection device and the detection surface of the object component along the relative movement direction, thus improving the position detection accuracy.

[0039] The magnetic membrane can also be provided in two or more intermittently along the relative movement direction. For example, by configuring a magnetic sensor for each magnetic membrane, the change in magnetic field in the relative movement direction can be detected in the same way, thereby improving the accuracy and reliability of the detection system.

[0040] The position detection system disclosed herein has the following characteristics:

[0041] The detection device includes a magnetic sensor for detecting changes in the magnetic field; and

[0042] An object component, which is positioned face-to-face with the magnetic sensor at a predetermined interval and is movable relative to the magnetic sensor,

[0043] The object component or the detection device has a magnetic film with a thickness of 10 μm or more.

[0044] The magnet film is placed on the surface of the substrate layer.

[0045] The surface of the magnet film of the object component has a groove pattern in which grooves of a predetermined depth and at predetermined intervals appear along the relative movement direction in a predetermined pattern.

[0046] In this position detection system, the thin magnetic film on the surface of the substrate layer enables the system to be made thinner and smaller. This magnetic film can be manufactured, for example, by molten salt impregnation or a method employing molten salt impregnation, resulting in a stronger magnetic field that is less susceptible to noise, thus improving the accuracy of the detected position.

[0047] Furthermore, in this position detection system, when the object component moves relative to the magnetic sensor, the magnetic sensor detects the periodic change in the magnetic field that changes position in the slot. Therefore, even without multipole magnetization of the magnetic film, the relative position (including the amount of movement) of the magnetic sensor relative to the object component can be accurately detected. Alternatively, the magnetic film can be multipole magnetized according to the slot pattern, in which case the detection sensitivity is further improved.

[0048] The detection target component according to one aspect of this disclosure is a detection target component having a detection part that can face a magnetic sensor at a predetermined interval, and which can be relatively movable relative to the magnetic sensor, characterized in that...

[0049] The part to be tested of the object to be tested has a magnetic film with a thickness of 300 μm or less disposed on the surface of the substrate layer.

[0050] The detection object component of this disclosure can also be used as a substitute for the detection object component of any of the above-described detection systems, and the same effect can be achieved by considering the same modifications.

[0051] One aspect of this disclosure relates to a magnetic detection device comprising a magnetic sensor for detecting changes in a magnetic field and a magnetic component made of magnetic material, characterized in that...

[0052] At least a portion of the surface of the magnetic component has a magnetic film with a thickness of less than 300 μm.

[0053] The magnetic detection device of this disclosure can also be used as a substitute for the detection device of any of the above-mentioned detection systems, and the same effect can be achieved by considering the same modifications. Attached Figure Description

[0054] Figure 1This is a schematic cross-sectional view of a position detection system according to one implementation method.

[0055] Figure 2A It means Figure 1 The diagram shows a cross-sectional view of the main parts of the manufacturing process of the magnet film.

[0056] Figure 2B It means Figure 2A A cross-sectional view of the main part of the subsequent process shown in the diagram.

[0057] Figure 2C It means Figure 1 The diagram shows a cross-sectional view of the main part of the magnet membrane.

[0058] Figure 2D It means Figure 2C The image shown is a cross-sectional SEM image of a specific example of a magnet membrane.

[0059] Figure 2E It means in Figure 2D The graph shows the concentration distribution of transition metal elements at the measurement points along the IIE line in the thickness direction of the crystalline grains.

[0060] Figure 2F It is Figure 2D The image shows a magnified cross-sectional SEM image of the grain boundary of the IIF portion.

[0061] Figure 2G It means along with Figure 2F A graph showing the concentration distribution of rare earth elements at the measurement point of the imaginary line perpendicular to the grain boundary.

[0062] Figure 3A This is a cross-sectional view of the object component used in a position detection system according to another embodiment.

[0063] Figure 3B This is a schematic perspective view of the object component in another embodiment.

[0064] Figure 3C This is a schematic perspective view of the object component in another embodiment.

[0065] Figure 3D This is a schematic perspective view of the object component in another embodiment.

[0066] Figure 4A1 This is a schematic cross-sectional view of a position detection system according to another embodiment.

[0067] Figure 4A2 This is a schematic cross-sectional view of a position detection system according to another embodiment.

[0068] Figure 4BThis is a cross-sectional view of the main part of the object component, representing a modified example of the groove pattern in Figure 4A.

[0069] Figure 4C1 It means Figure 4B The diagram shows a cross-sectional view of the main parts of the manufacturing process of the object component.

[0070] Figure 4C2 It means Figure 4C1 Cross-sectional view of the main parts of the subsequent manufacturing process.

[0071] Figure 4C3 It means Figure 4C2 Cross-sectional view of the main parts of the subsequent manufacturing process.

[0072] Figure 4C4 It means through the Figure 4C3 The manufacturing process shown is obtained by adding subsequent manufacturing processes. Figure 4E The diagram shows a cross-sectional view of the main part of the object component.

[0073] Figure 4D It has Figure 4B A schematic cross-sectional view of the position detection system for a modified example of the object component shown.

[0074] Figure 4E yes Figure 4B The cross-sectional view of the main part of the object component in the modified example shown.

[0075] Figure 4F yes Figure 4E The cross-sectional view of the main part of the object component in the modified example shown.

[0076] Figure 4G yes Figure 4E The cross-sectional view of the main part of the object component in the modified example shown.

[0077] Figure 4H yes Figure 4G The cross-sectional view of the main part of the object component in the modified example shown.

[0078] Figure 4Ha It means Figure 4H The diagram shows a cross-sectional view of the main parts of the manufacturing process of the object component.

[0079] Figure 4I yes Figure 4B The cross-sectional view of the main part of the object component in the modified example shown.

[0080] Figure 4J This is a cross-sectional view of the main part of the object component in another embodiment.

[0081] Figure 4K yes Figure 4J The main cross-sectional view of the modified object component is a main cross-sectional view of the part in which a tapered magnet film is formed inside a circular substrate.

[0082] Figure 5A This is a schematic cross-sectional view of a position detection system according to another embodiment.

[0083] Figure 5B It means Figure 5A The diagram shows a cross-sectional view of the main parts of the position detection system after the detection device has been moved.

[0084] Figure 6A It means Figure 5A Cross-sectional view of the main parts of the manufacturing process of the detection device shown.

[0085] Figure 6B It means Figure 6A Cross-sectional view of the main parts of the subsequent manufacturing process.

[0086] Figure 6C It means Figure 6B Cross-sectional view of the main parts of the subsequent manufacturing process.

[0087] Figure 6D It means Figure 6C Cross-sectional view of the main parts of the subsequent manufacturing process.

[0088] Figure 6E It means Figure 6D Cross-sectional view of the main parts of the subsequent manufacturing process.

[0089] Figure 7A This is a cross-sectional view of the main parts of a position detection system according to another embodiment.

[0090] Figure 7B This is a cross-sectional view of the main parts of a position detection system according to another embodiment.

[0091] Figure 7C This is a cross-sectional view of the main parts of a position detection system according to another embodiment.

[0092] Figure 7D This is a cross-sectional view of the main parts of a position detection system according to another embodiment.

[0093] Figure 7E This is a cross-sectional view of the main parts of a position detection system according to another embodiment.

[0094] Figure 7F This is a cross-sectional view of the main parts of a position detection system according to another embodiment.

[0095] Figure 7GThis is a cross-sectional view of the main parts of a position detection system according to another embodiment. Detailed Implementation

[0096] The embodiments shown in the accompanying drawings will now be described.

[0097] First Implementation Method

[0098] (Location detection system)

[0099] like Figure 1 As shown, the position detection system 100 of this embodiment includes: a magnetic detection device (hereinafter also simply referred to as the detection device) 110, which has a magnetic sensor 112; and a detection target component (hereinafter also simply referred to as the target component) 120, which is configured to face the magnetic sensor 112 at a predetermined interval and to be relatively movable relative to the magnetic sensor 112 along, for example, the X-axis direction. Furthermore, in the figure, the X-axis, Y-axis, and Z-axis are perpendicular; in this embodiment, the X-axis is aligned with the relative movement direction.

[0100] The target component 120 has a substrate 1 as a base layer and a magnetic film 10 formed on the surface of the substrate 1. The magnetic film 10 is disposed in the detection section of the target component 120. The substrate 1 is made of a transition metal such as Fe or Co. The magnetic film 10 can be formed directly on the surface of the substrate by a method described later, or a magnetic layer can be provided between the magnetic film 10 and the substrate 1, which contains the same components as those constituting the magnetic film 10, but in different proportions.

[0101] In this embodiment, the surface of the magnet film 10 is magnetized such that different magnetic poles (N pole and S pole) alternately appear along the X-axis, which is the direction of relative movement. For example, a first portion 12 of the magnet film 10, which serves as the N pole, and a second portion 14, which serves as the S pole, are alternately arranged along the X-axis of the magnet film 10. The width W1 of each portion 12 or 14 along the X-axis can be the same or different. The total width W2 of the paired portions 12 and 14 is not particularly limited and can be determined according to the application. However, if high positional accuracy is required, it can be set to less than 2 mm, less than 0.8 mm, less than 0.5 mm, or less than 0.1 mm. Furthermore, it is preferable that the first portion 12 and the second portion 14 are continuous along the Y-axis, but they can also be formed intermittently along the Y-axis. In addition, there may be a region of incomplete magnetization between the first portion 12 and the second portion 14.

[0102] The thickness T1 of the magnet film 10 is 10 μm or more and 300 μm or less. Preferably, it is 15 μm or more, 20 μm or more, 30 μm or more, 50 μm or more, or 50 to 200 μm. The total width W2 is preferably more than one time the thickness T1, but it can also be less than or equal to it. The thickness of the substrate 1 is not particularly limited. The substrate 1 can also be fixed to other components that move relative to the detection device 110 in the X-axis direction. Alternatively, the substrate 1 can be fixed to other components that are fixed relative to the detection device 110 that moves in the X-axis direction. An adhesive layer for mounting to other components, or a magnet film for mounting and removing, or a magnet film for driving, different from the magnet film 10 used for position detection, can also be formed on the surface opposite to the surface of the substrate 1 on which the magnet film 10 is formed. The magnetic film for mounting and dismounting, or the magnetic film for driving, is different from the magnetic film 10. It can be magnetized into magnetic poles with the same surface, or it can be magnetized in a way that alternates between different magnetic pole surfaces. However, apart from magnetization, it can be formed on the substrate 1 in the same way as the magnetic film 10.

[0103] The magnetic sensor 112 of the detection device 110 is not particularly limited to any sensor capable of detecting changes in the magnetic field; examples include Hall elements, MR (AMR, GMR, TMR) elements, MI elements, GSR elements, search coils, SQUIDs, etc. The detection device 110 preferably has a circuit board 114 on which the magnetic sensor 112 is mounted. The circuit board 114 may also be mounted and fixed to other components. When the target component 120 moves relative to the detection device 110, the other components are fixed components; when the detection device 110 moves relative to the target component 120, the other components become moving components.

[0104] The width W3 of the magnetic sensing portion of the magnetic sensor 112 along the X-axis is not particularly limited, but is preferably equal to or less than the smaller width W1 of either the first portion 12 or the second portion 14 of the magnet film 10. For example, when the magnetic sensor 112 is a Hall element, it can detect changes in the Z-axis component of the magnetic flux generated by the magnet film 10. Therefore, the magnetic sensor 112 can detect the different directions of the magnetic field depending on whether it faces the first portion 12 or the second portion 14 along the X-axis.

[0105] Alternatively, if the magnetic sensor 112 is an MR element, it is possible to detect changes in the X-axis component of the magnetic flux generated by the magnet membrane 10.

[0106] In any case, when the object component 120 moves relative to the detection device 110 along the X-axis, the magnetic sensor 112 alternately faces the first part 12 and the second part 14 in a non-contact state. Therefore, it can detect the periodic changes in the magnetic field and detect the relative movement based on the periodic changes in the magnetic field.

[0107] In addition, Figure 1 Alternatively, a portion on the surface of the substrate 1 where neither the first portion 12 nor the second portion 14 is formed may be formed. In this case, the magnetic sensor 112 can determine whether the object component 120 is positioned facing the first portion 12 or the second portion 14, or facing the surface where the magnet film 10 is not formed, when the object component 120 moves relative to the detection device 110 along the X-axis. The position detection system of this embodiment can also be used to detect the extent to which the object component 120 has moved relative to the detection device 110 along the X-axis, but it can also be used simply to detect whether there is a positional shift. Alternatively, only one first portion 12 may be formed on the surface of the substrate 1. Alternatively, multiple first portions 12 or second portions 14 with different widths may be formed on the surface of the substrate 1.

[0108] In the system 100 of this embodiment, the distance C1 from the surface of the magnetic sensor 112 to the surface of the magnetic film 10 is not particularly limited, and is determined in such a way that the magnetic sensor 112 can detect the magnetic field from the first portion 12 or the second portion 14 of the magnetic film 10. For example, it is preferably 0.1 to 100 times the thickness T1 of the magnetic film 10. In addition, it is preferable that the thickness T1 of the magnetic film 10 is less than the combined width W2 of portions 12 and 14.

[0109] Next, the magnet film 10 will be described.

[0110] (Magnetic membrane)

[0111] like Figure 2C As shown, the magnetic film 10 is formed on the surface of the substrate 1, which serves as the substrate layer, and is composed of a main magnetic layer 20. It may also include secondary magnetic layers 30a and 30b. The secondary magnetic layer 30a is stacked between the substrate 1 and the main magnetic layer 20, and another secondary magnetic layer 30b is stacked on the surface of the main magnetic layer 20 located on the side opposite to the substrate 1. In this embodiment, the magnetic film 10 is composed of the main magnetic layer 20, which is a permanent magnet film (hard magnetic film). The main magnetic layer 20 may contain a plurality of crystalline particles 22.

[0112] The main magnetic layer 20 can be a magnetic film containing rare earth element R (Sm or Nd) and transition metal element T (Co or Fe), and nitrogen as needed. Preferably, the main magnetic layer 20 and the secondary magnetic layers 30a and 30b, formed as needed, contain the same elements, but they can also have different compositions.

[0113] For example, the main magnetic layer 20 is preferably a magnetic film containing rare earth elements such as Sm or Nd and transition metal elements such as Co or Fe. The rare earth element R can also be Sc, Y, or lanthanides. The transition metal T does not contain rare earth elements. The transition metal T can also be an iron group element. Furthermore, it is preferable that the concentration (T / (R+T)) of the transition metal element (T) in at least one crystalline particle 22 changes along the thickness direction of the main magnetic layer 10 relative to the total (R+T) of the rare earth element (R) and the transition metal element (T). Additionally, it is preferable that the first concentration of the transition metal element at the surface-side end 24 of at least one crystalline particle 22 near the surface of the main magnetic layer 20 differs from the second concentration of the transition metal element at the back-side end 25 of at least one crystalline particle 22 located on the back side of the main magnetic layer 20 at a position opposite to the surface by a predetermined proportion or more. From the viewpoint of further improving position detection accuracy, the average particle size of the crystalline particles 22 in the relative movement direction is preferably 30 μm or less.

[0114] The preferred main magnetic layer 20 is composed of RT5 and R2T. 17 RT 12 Any of the following compositions. The main magnetic layer 20 may also contain nitrogen. For example, the main magnetic layer 20 may be SmCo5 or Sm2Co. 17 、SmFe 12 NdFe 12 Sm2Fe 17 Any of N3. The secondary magnetic layers 30a and 30b are preferably composed of rare earth elements (R) in a proportion different from the proportion of rare earth elements in the main magnetic layer 20. For example, if the main magnetic layer 20 is composed of SmCo5, it is preferable that the secondary magnetic layer 30a is composed of a composition with a lower content (R / (R+T)) of rare earth elements than that in the main magnetic layer 20 (e.g., Sm2Co). 17 The secondary magnetic layer 30b is composed of a composition (e.g., Sm2Co7) with a higher content of rare earth elements than the primary magnetic layer 20.

[0115] Preferably, there are no interlayers made of non-magnetic materials, such as oxide layers, resin layers, or adhesive layers, with a resolution of 0.5 to 4 nm that can be observed using a scanning electron microscope (SEM) between the substrate 1 and the secondary magnetic layer 30a, between the secondary magnetic layer 30a and the main magnetic layer 20, and between the main magnetic layer 20 and the secondary magnetic layer 30b. However, there may be interlayers thinner than 0.5 to 4 nm. Alternatively, a protective layer made of non-magnetic materials, such as oxide layers, resin layers, or adhesive layers, may be formed on the surface of the secondary magnetic layer 30b, or on the surface of the main magnetic layer 20 when the secondary magnetic layer 30b is absent.

[0116] The thickness of the protective layer is not particularly limited, but from the viewpoint of maximizing the generation of magnetic force toward the surface of the main magnetic layer 20, the thinner the better. From the viewpoint of further increasing the surface magnetic flux density, the lower limit of the thickness of the main magnetic layer 20 is preferably 10 μm or more, 20 μm or more, 30 μm or more, or 50 μm or more. The upper limit of the thickness is not particularly limited, but is preferably 350 μm or less, 300 μm or less, or 200 μm or less.

[0117] The thicknesses of the secondary magnetic layers 30a and 30b are each less than the thickness of the primary magnetic layer 20. For example, the thickness of the secondary magnetic layer 30a can be less than 1 / 2, 1 / 4, or 1 / 8 of the thickness of the primary magnetic layer 20. The thickness of the secondary magnetic layer 30b can also be less than 1 / 2, 1 / 3, or 1 / 4 of the thickness of the secondary magnetic layer 30a. The thicknesses of these layers 20, 30a, and 30b can be measured, for example, by averaging the measurements at multiple locations from the cross-sectional SEM image shown in Figure 4.

[0118] The easy magnetization axis of the main magnetic layer 20 can be oriented in a direction perpendicular to the surface of the substrate 1. Because the magnetic field detected by the magnetic sensor 112 becomes larger, the detection accuracy of the position detection system 100 becomes even higher, so the orientation degree of the easy magnetization axis is preferably 90% or more.

[0119] In the following description, the main magnetic layer 20 contains SmCo5 as the main phase, and the secondary magnetic layer 30a contains Sm2Co. 17 As the main phase, the secondary magnetic layer 30b contains Sm2Co7 as the main phase.

[0120] SmCo5 has a CaCu5-type crystal structure and is an alloy of Sm and Co. The ratio of Sm atoms to Co atoms in SmCo5 can deviate from the stoichiometric ratio. For example, when various elements are added to improve magnetic properties, the ratio of Sm atoms to Co atoms in SmCo5 may not always be stoichiometric. Therefore, if SmCo5 adopts a CaCu5-type crystal structure, the ratio of Sm atoms to Co atoms can also deviate from the stoichiometric ratio.

[0121] In this application specification, "as the main phase" refers to the phase with the highest mass proportion in the film. For example, the main magnetic layer 20 may also have a phase different from SmCo5, such as other crystalline phases and grain boundary phases. The proportion of SmCo5 in SmCo5 may be, for example, 70% or more by mass, 80% or more by mass, 90% or more by mass, or 95% or more by mass. As a heterogeneous phase, an Sm-rich phase with a higher Sm content than SmCo5 can be cited as an example.

[0122] The SmCo5 crystal orientation [00L] is oriented towards the thickness direction of the main magnetic layer 20, i.e., perpendicular to the film surface. L is any natural number. L always refers to the same direction. For example, L is 2. The SmCo5 crystal orientation [00L] oriented towards the thickness direction of the main magnetic layer 20 means that the orientation degree is 50% or more. This orientation degree is obtained based on the vector-corrected Lotgering method and represents the ratio of the sum of diffraction peaks based on the crystal orientation [00L] component to the sum of diffraction peaks based on the SmCo5 crystal plane (hkl). From the perspective of further improving the surface magnetic flux density of the main magnetic layer 20, the orientation degree is preferably 90% or more, more preferably 95% or more. In addition, SmCo5 has a Curie point of over 700°C, therefore, it has excellent thermal stability.

[0123] Sm2Co 17 Using Th2Zn 17 It has a crystal structure of type and is an alloy of Sm and Co. Sm₂Co 17 The ratio of Sm atoms to Co atoms in Sm2Co can also deviate from the stoichiometric ratio. For example, when various elements are added to improve magnetic properties, etc., the ratio of Sm to Co can also deviate from the stoichiometric ratio. 17 The ratio of Sm atoms to Co atoms in Sm₂Co₂ is not always a stoichiometric ratio. Therefore, if Sm₂Co₂... 17 Using Th2Zn 17 In a crystal structure of this type, the ratio of Sm atoms to Co atoms can also deviate from the stoichiometric ratio.

[0124] The secondary magnetic layer 30a can also have properties similar to Sm2Co. 17 Different phases, such as other crystal phases and grain boundary phases. Sm2Co 17 Sm2Co in the membrane 17 The percentage can be, for example, 70% or more by mass, 80% or more by mass, 90% or more by mass, or 95% or more by mass.

[0125] The ratio of Sm atoms to Co atoms in the secondary magnetic layer 30b can be greater than 0.28 and less than 0.51. The secondary magnetic layer 30b can be Sm2Co7, SmCo3, or SmCo2. The secondary magnetic layer 30b can also have multiple crystal phases and grain boundary phases.

[0126] The secondary magnetic layer 30b may also have a phase different from Sm2Co7, such as other crystal phases and grain boundary phases. The proportion of Sm2Co7 in the secondary magnetic layer 30b may be, for example, 70% or more by mass, 80% or more by mass, 90% or more by mass, or 95% or more by mass.

[0127] In this embodiment, such as Figure 2CAs shown, the main magnetic layer 20 has a plurality of crystalline particles 22. In this embodiment, the crystalline particles 22 preferably have at least one columnar particle 22a, and may also have non-columnar particles 22b. The columnar particles 22a are classified into through-type particles 22a1 and non-through-type particles 22a2. Similarly, the non-columnar particles 22b are classified into through-type particles 22b1 and non-through-type particles 22b2.

[0128] In this embodiment, the main magnetic layer 20 can be either crystalline particles 22 in which columnar particles 22a are predominant, or crystalline particles 22 in which non-columnar particles 22b are predominant. A crystalline particle 22 in which columnar particles 22a are predominant is defined as a case where, in a cross-sectional SEM image of an observation field where 100 or more crystalline particles 22 are observed, 50% or more, preferably 60% or more, of the crystalline particles are columnar particles 22a. Similarly, a crystalline particle 22 in which non-columnar particles 22b are predominant is defined as a case where, in a cross-sectional SEM image of an observation field where 100 or more crystalline particles 22 are observed, 50% or more, preferably 60% or more, of the crystalline particles are non-columnar particles 22b.

[0129] In the following description, the crystalline particles 22, which are predominantly columnar particles 22a, will be mainly described.

[0130] Columnar particles 22a are defined as those obtained by, for example, Figure 2D The cross-sectional SEM image shown is observed. Figure 2C The crystalline particles shown in the main magnetic layer 20 have a first length Lc along the thickness direction that is longer than a second length La along the direction perpendicular to the thickness direction. In the columnar particles 22a, crystalline particles that penetrate from the lower surface to the upper surface along the thickness direction of the main magnetic layer 20 are defined as penetrating particles 22a1, and non-penetrating columnar particles 22a are defined as non-penetrating particles 22a2.

[0131] in addition, Figure 2C Crystalline particles of the main magnetic layer 20 shown, having a first length Lc along the thickness direction that is the same as or shorter than a second length La along a direction perpendicular to the thickness direction, are defined as non-columnar particles 22b. Among the non-columnar particles 22b, crystalline particles that penetrate from the lower surface to the upper surface along the thickness direction of the main magnetic layer 20 are defined as penetrating particles 22b1, and non-penetrating non-columnar particles 22b are defined as non-penetrating particles 22b2.

[0132] In this embodiment, in the cross-sectional SEM image of the magnet film 10, for example, within the observation range where more than 100 crystal particles 22 are observed, the first average value Lc1 of the first length Lc of the main magnetic layer 20 along the thickness direction is 10 μm or more. Furthermore, the ratio (Lc1 / La2) of the aforementioned first average value Lc1 to the second average value La2 of the second length La of the crystal particles 22 observed within the same observation range is not particularly limited, but is preferably 0.5 or more, 1.1 or more, or 2.0 or more. That is, it is considered that when Lc1 / La2 becomes a predetermined value or more, the ratio in the thickness direction with respect to the crystal particle length increases, and the effect of reducing the demagnetizing field increases. As a result, the coercivity of the magnet film 10 can be improved.

[0133] like Figure 1 As shown, the main magnetic layer 20 has grain boundaries 23 between the columnar particles 22a and between the columnar particles 22a and non-columnar particles 22b. For example, Figure 2F As shown, the thickness of the grain boundary 23 is not particularly limited, for example, it is less than 10 nm, preferably 0.5 to 5 nm, or preferably 1 to 3 nm.

[0134] In this embodiment, for example, Figure 2G As shown, the proportion of rare earth elements (e.g., Sm) in the grain boundary 23 is at least 5% less than that inside the crystal grain 22a. That is, preferably (R amount inside the crystal grain - R amount in the grain boundary) / (R amount inside the crystal grain) ≥ 5%. Furthermore, the interior of the crystal grain 22a is, for example, a location that extends at least 50 nm away from the grain boundary 23 in a direction perpendicular to the long side of the grain boundary 23.

[0135] It is believed that due to the compositional changes of grain boundaries 23, the grain boundaries may become amorphous, generating gaps with anisotropic magnetic fields. Therefore, it is thought that magnetic fragmentation occurs between crystalline grains, further increasing coercivity. That is, it is believed that the magnetic fragmentation between crystalline grains 22 caused by the depletion of rare earth elements such as Sm at grain boundaries would hinder the propagation of magnetization reversal.

[0136] Furthermore, in this embodiment, regarding any one of the crystalline particles 22 constituting the main magnetic layer 20, for example, the through-type particle 22a1, along... Figure 2D The imaginary line shown in the IIE diagram represents the distribution of the concentration (T / (R+T)) of transition metal elements (T) relative to rare earth elements (R) and the total of said transition metal elements (T) (R+T), for example as follows: Figure 2E The variation is shown in the thickness direction.

[0137] That is, the first concentration (T1 / (R1+T1)) of the transition metal element at the surface-side end 24 of the crystal grain 22a1 near the surface of the main magnetic layer 20 is at least 0.1% lower than the second concentration (T2 / (R2+T2)) of the transition metal element at the back-side end 25 of the crystal grain 22a1 near the back side (substrate 1 side) of the crystal grain 22a1 located opposite to the surface of the main magnetic layer 20.

[0138] (Manufacturing method of magnet film)

[0139] Next, the manufacturing method of the magnet film 10 will be described.

[0140] First, a substrate 1 is prepared as the substrate layer. The substrate 1 is not particularly limited, but in order to form the magnetic film 10 on its surface, at least one surface of the substrate 1 has a transition metal element that is the same as the transition metal element contained in the main magnetic layer 20. For example, if the transition metal element contained in the main magnetic layer 20 is Co or Fe, the surface of the substrate 1 preferably has a Co layer or an Fe layer. Alternatively, the substrate 1 may also be a Co substrate or an Fe substrate.

[0141] When using a Co substrate as substrate 1, a metallic Co plate is preferred. The purity of Co in the Co substrate can be 99% by mass or higher, or 99.998% by mass or higher. Other substrates may also be present beneath the Co substrate. The thickness of the Co substrate is not particularly limited and can be appropriately selected according to the application, for example, it can be set to 0.01 to 2 mm.

[0142] Next, the method for fabricating the magnetic film 10 on the surface of the substrate 1 will be described in detail. As an example, the case where a Co substrate is used as the substrate 1 will be explained. First, as... Figure 2A As shown, substrate 1, which is made of Co substrate, is prepared.

[0143] The surface 1α of substrate 1 can also be roughened. For example, the arithmetic mean surface roughness Ra of the surface of substrate 1 (e.g., JIS B 0601) can be 0.5 μm or more, or 5.1 μm or more. Furthermore, there is no particular upper limit to the arithmetic mean surface roughness Ra of the substrate; for example, it can be 50 μm or less, or 29 μm or less. Surface roughness can be measured using known methods. Additionally, the surface roughness of substrate 1 can be controlled using known methods, such as sandpaper application, sandblasting, photolithography, tumbling, electrolytic polishing, and other surface processing methods. In this case, when using sandpaper for processing, it is preferable to perform the process in a random direction.

[0144] Next, as Figure 2BAs shown, a magnet preparation film 10a composed of an SmCo2 film is formed on the surface of substrate 1. Preferably, the magnet preparation film 10a is manufactured, for example, by a molten salt impregnation method or a method using a molten salt impregnation method. First, substrate 1 and a reaction solution containing an Sm source and molten salt are prepared.

[0145] In preparing the reaction solution, firstly, a specified inorganic salt is dehydrated by drying it. Examples of inorganic salts include KCl (potassium chloride), LiCl (lithium chloride), and NaCl (sodium chloride). One inorganic salt or a combination of two or more inorganic salts can be used. The dehydrated inorganic salt is then heated to a specified temperature to melt it (molten salt). The melting temperature of the inorganic salt can be appropriately determined according to the type of inorganic salt used; for example, it is preferably 400°C or higher, more preferably 500°C or higher, and even more preferably 600°C or higher.

[0146] An Sm source is added relative to the molten salt (molten inorganic salt) described above to obtain a reaction solution. Examples of Sm sources include metallic Sm and Sm alloys; one or more Sm sources can be used. When the total number of moles of Sm source and inorganic salt in the reaction solution is set to 100 mol%, the proportion of Sm source in the reaction solution is preferably, for example, 0.2 mol% to 6 mol%.

[0147] Next, by bringing the above-mentioned reaction solution into contact with the surface of substrate 1, the Sm source in the molten salt reacts and diffuses on the surface of substrate 1, thereby forming a magnetic film containing Sm on the surface of substrate 1. This process is called the reaction diffusion process.

[0148] In the reactive diffusion process, a magnetic coating containing Sm is formed on both sides of a plate-shaped Co substrate 1 by immersing it in a reaction solution at a specified temperature for a specified time. However, when the substrate 1 is directly immersed in the reaction solution, a magnetic coating containing Sm is formed even in areas where a magnetic coating is not desired, resulting in a lower yield. Therefore, an inert film can be used to cover areas where a magnetic coating is not desired to suppress reactive diffusion.

[0149] For example, it is preferable to form a mask of a high-melting-point material in areas where it is not desired. Examples of high-melting-point materials include W, Ta, Nb, Mo, or alloys containing at least one of these elements. The mask of the high-melting-point material can be formed, for example, by a vapor deposition method. By forming a mask of a high-melting-point material on the outer peripheral surface and the end surface, and then immersing the substrate 1 in the reaction solution, the Sm source can be reacted and diffused only in the necessary areas of the substrate 1, forming a magnetic film containing Sm.

[0150] In the reactive diffusion process, the temperature of the reaction solution is maintained at a temperature at which the inorganic salt remains in a molten state. From the viewpoint of effectively forming a magnetic coating, the temperature of the reaction solution is preferably 500°C to 900°C, more preferably 650°C to 800°C. Furthermore, the reaction time can be appropriately set according to the reaction temperature and the proportion of Sm source in the reaction solution to form a magnetic coating of the desired thickness. For example, the reaction time can also be set to 1 hour to 60 hours.

[0151] In this embodiment, regarding the reaction time of the reactive diffusion process, the concentration of Sm (an example of a rare earth element) in the reaction solution is not necessarily at the start and end of the reaction. Compared to the start of the reaction, the concentration of Sm at the end of the reaction can be controlled to be preferably increased by 1.1 to 3 times. For example, by gradually adding an Sm source to the reaction solution, the concentration of Sm in the reaction solution is increased, thereby adjusting the concentration distribution of the transition metal T in the magnetic film. The Sm source can be added continuously, intermittently, or all at once. The Sm concentration in the reaction solution during the reactive diffusion process can, for example, vary within the range of 0.1 to 6.0 mol / L.

[0152] The magnetic coating formed on the surface of substrate 1 during the reactive diffusion process is Sm2Co. 17 The precursor to the SmCo5 layer. Specifically, the magnetic coating after the reactive diffusion process preferably contains Sm2Co7, SmCo3, SmCo2, Sm5Co2, Sm3Co5, and Sm as the main phase, and particularly preferably contains SmCo2 as the main phase. SmCo2 is an alloy of Sm and Co with a MgCu2-type crystal structure. If the main phase SmCo2 has a MgCu2-type crystal structure, the ratio of Sm atoms to Co atoms in SmCo2 can also deviate slightly from the stoichiometric ratio. For example, when additive elements are added to improve magnetic properties, the ratio of Sm atoms to Co atoms sometimes deviates slightly from the stoichiometric ratio.

[0153] In addition to the main phase, the magnetic coating (magnetic preparative film 10a) may also contain Sm-rich phases, such as a phase with a higher Sm content than SmCo2, and grain boundary phases. The SmCo2 content in the magnetic coating can be set to 50 wt% or more, preferably 70 wt% or more, and more preferably 90 wt% or more.

[0154] Alternatively, after the reaction diffusion process, the substrate 1 with the magnetic coating can be cleaned using organic solvents such as ethanol or pure water.

[0155] Next, the substrate 1, on which a magnetic coating containing SmCo2 (magnet preparation film 10a) is formed, is heated at a predetermined temperature for a predetermined time (heating process). In this heating process, the SmCo2 reacts further with Co on the surface of the substrate 1, generating a magnetic coating (magnet preparation film 10a) from the surface of the Co-composed substrate 1 and the SmCo2-composed magnetic coating. Figure 2C As shown, Sm2Co 17 The system consists of a secondary magnetic layer 30a composed of layers and a primary magnetic layer 20 composed of SmCo5 layers. Alternatively, a secondary magnetic layer 30b may be formed on the surface of the primary magnetic layer 20.

[0156] The heating rate during the heating process is not particularly limited, but is preferably 1°C / min or higher and 20°C / min or lower. The holding temperature (reached temperature) is preferably 800°C or higher and 1200°C or lower, more preferably 850°C or higher and 1150°C or lower, and even more preferably 900°C or higher and 1100°C or lower. The holding time at the above holding temperature is preferably 2 hours or higher and 48 hours or lower. Furthermore, the cooling rate during cooling after heating is preferably 5°C / min or higher, more preferably 10°C / min or higher, and even more preferably 20°C / min or higher.

[0157] There are no particular restrictions on the atmosphere used in the heating process, but from the viewpoint of suppressing the oxidation of the SmCo5 layer, a non-reactive gas atmosphere is preferred. For example, Ar gas and N2 gas can be used as non-reactive gases.

[0158] Furthermore, in this embodiment, after the heating process, the temperature may be lowered to a predetermined temperature and then maintained at that temperature for a predetermined time (low-temperature annealing process). Through this low-temperature annealing process, Co element diffuses from the Co in the substrate 1 through the grain boundaries of the SmCo5 crystals, potentially modulating the two-grain grain boundaries between the SmCo5 crystal grains. That is, it is believed that an amorphous phase, in which the transition metal (Co) is enriched compared to the main phase crystalline grains 22, is easily formed at the two-grain grain boundaries 23.

[0159] The holding temperature in the low-temperature annealing process is preferably 550°C to 700°C, more preferably 550°C to 600°C. The holding time in the low-temperature annealing process is preferably 2 hours to 8 hours. In particular, in annealing at 600°C or below, the coarsening of the crystalline particles 22 of the main phase such as SmCo5 or the decomposition of the main phase does not occur, and the diffusion of element (Co) through the two-grain boundary 23 of the substrate 1 occurs. As a result, it is believed that amorphous two-grain boundaries 23 with a thickness of several nanometers are easily formed. Furthermore, two-grain boundaries are also formed even without low-temperature annealing.

[0160] It can be manufactured through the above-mentioned processes (reaction diffusion process, heating process, and low-temperature annealing process). Sm2Co is sequentially formed on the surface of substrate 1. 17 A multilayer structure is obtained by adding a layer of SmCo5 and another layer of SmCo5. When a mask of a high-melting-point material is formed on the surface of substrate 1, the mask of the high-melting-point material can be removed after the heating process, or the mask of the high-melting-point material can be left behind.

[0161] The surface of the magnetic film (which can be a single layer or a multilayer film) containing the main magnetic film 20, manufactured by the above method, is magnetized, for example, by pulse magnetization, laser-assisted heating magnetization, or heat-assisted magnetization. Figure 1 As shown, different magnetic poles are formed alternately on the surface in sections 12 and 14 along the X-axis.

[0162] The above-described method for manufacturing the magnetic film 10 is not only applicable to a flat substrate 1, but also applicable to the formation of the magnetic film 10 on the surface of a substrate layer (including the substrate 1) having various curved surfaces. Furthermore, it is also applicable to the formation of the magnetic film 10 on the inner surface of a cylindrical base member.

[0163] (Summary of this implementation method)

[0164] like Figure 1 As shown, in the position detection system 100 of this embodiment, because the target component 110 has a magnetic film 10 with a thickness of 300 μm or less that is placed on the surface of the substrate 1, the position detection system 100 can be made thinner and smaller. In particular, the position detection system 100 of this embodiment can be effectively used as a position detection system for narrow gaps. In addition, because the magnetic film 10 is placed on the surface of the substrate 1, the magnetic film 10 can be manufactured by the molten salt impregnation method described above or by a method using the molten salt impregnation method, which improves the magnetization characteristics of the obtained magnetic film 10, generates a stronger magnetic field, and is relatively less affected by noise. Therefore, the position detection accuracy is higher.

[0165] In addition, such as Figure 2C As shown, in the magnet film 10, the concentration of transition metals such as Co has a gradient along the film thickness direction in the through-type crystalline particles 22a1 of the crystalline particles 22 constituting the main magnetic layer 20. Therefore, it is possible to achieve a magnet film 10 containing more transition metals than the stoichiometric composition while maintaining the crystal structure. Therefore, the magnetization of the magnet film 10 can be improved. In addition, the coercivity can also be maintained at a high level.

[0166] Furthermore, in the magnet film 10 of this embodiment, the first concentration (T1 / (R1+T1)) of the transition metal element at the surface-side end 24 of the crystalline particles 22a1 near the surface of the magnet film 10 is at least 0.1% lower than the second concentration (T2 / (R2+T2)) of the transition metal element at the back-side end 25 of the crystalline particles 22a1 located on the back side (substrate 1 side) opposite to the surface of the magnet film 10. In this case, the concentration of the transition metal element T is lower on the surface side of the magnet film 10, while the concentration of rare earth elements is relatively higher, further improving the coercivity.

[0167] Furthermore, in this embodiment, within the observation range of the SEM cross-section, there is at least one columnar particle 22a whose first length Lc along the thickness direction of the main magnetic layer 20 constituting the magnet film 10 is longer than its second length La along the direction perpendicular to the thickness direction. Additionally, the first average length (Lc1) of the crystallized particles 22 along the thickness direction is 10 μm or more. More preferably, within the observation range of the SEM cross-section where more than 100 crystallized particles 22 are observed, columnar particles 22a are observed that represent more than 1 / 5, more than 2 / 5, or more than 1 / 2 of the total length.

[0168] That is, in the magnet film 10 of this embodiment, the crystalline particles 22 are shaped to elongate in the direction of the easy magnetization axis. Therefore, the influence of the interaction between adjacent crystalline particles 22 during magnetization reversal can be minimized. As a result, the local demagnetizing field can be reduced, and the coercivity of the magnet film 10 can be improved. In summary, by making the crystalline particles 22 longer in the thickness direction, the local demagnetizing field is reduced, and the coercivity of the magnet (magnet film) is improved. Furthermore, crystalline particles 22a that are longer in the thickness direction are known in sputtered films, but it is difficult to manufacture sputtered films with a thickness of 10 μm or more.

[0169] Furthermore, in this embodiment, the columnar particles 22a have through-type particles 22a1 with a first length Lc equal to the thickness of the main magnetic layer 10. Because the main magnetic layer 20 has through-type particles 22a1 with the largest particle length in the thickness direction, the demagnetizing effect of the magnetic film 10 is increased. As a result, the coercivity of the magnetic film 10 is further improved.

[0170] Furthermore, in this embodiment, the surface magnetic flux density of the magnet film 10 is preferably 5 mT or more, more preferably 7 mT or more, and even more preferably 10 mT or more. The surface magnetic flux density of the magnet film can be measured by contacting the probe of the Hall element with the surface of the magnet film 10 and moving it along the film surface, converting the output voltage into magnetic flux density, etc.

[0171] In this embodiment, the secondary magnetic film 30a or the substrate 1 can also function as part of the magnetic yoke of the main magnetic layer 20, which functions as the magnetic film 10.

[0172] Furthermore, the surface shape of the substrate (component with the magnetic film) 1 having the magnetic film 10 of the above-described embodiment on its surface is not limited to... Figure 1 The planar shape shown.

[0173] For example in Figure 3A In the illustrated embodiment, a magnetic film 10 can also be formed on the surface of a cylindrical substrate layer 1a fixed to the outer periphery of the shaft 40. A first portion 12 and a second portion 14 with mutually different magnetic poles can be alternately formed along the circumferential direction X1 on the outer peripheral surface of the magnetic film 10. The substrate layer 1a can be formed, for example, by plating a transition metal such as Co onto the surface of the shaft 40. For example, the magnetic film 10 can be formed on the outer surface of the substrate layer 1a made of Co using the molten salt impregnation method described above or a method employing the molten salt impregnation method.

[0174] In this embodiment, the detection device shown in the figure is omitted (and... Figure 1 The detection device 110 shown is the same as the one shown. It is freely rotatable along the circumferential direction (relative movement direction) X1 and positioned at a predetermined distance from the outer circumferential surface of the cylindrical magnetic membrane 10. Figure 1 The distance C1 shown is the position. When the object part 120 rotates relative to the detection device along the circumferential direction X1, it can detect the periodic magnetic field change by alternately facing the first part 12 and the second part 14 in a non-contact state. Therefore, the detection device can detect the relative rotational movement (or rotation angle, or offset, etc.) based on the periodic magnetic field change.

[0175] In addition, Figure 3B In the illustrated embodiment, a magnetic film 10 can also be formed on the upper surface of a flat, annular substrate 1. A first portion 12 and a second portion 14 with mutually different magnetic poles can be alternately formed along the circumferential direction X1 on the surface of the magnetic film 10. The substrate 1 is, for example, a substrate made of Co, and the magnetic film 10 can be formed on its upper surface by the molten salt impregnation method described above or a method employing the molten salt impregnation method.

[0176] In this embodiment, the detection device shown in the figure is omitted (and... Figure 1 The detection device 110 shown is the same as the one shown. It is freely rotatable along the circumferential direction (relative movement direction) X1 and positioned at a predetermined distance from the outer surface of the annular magnetic film 10. Figure 1The distance C1 shown is the position. When the object part 120 rotates relative to the detection device along the circumferential direction X1, it can alternately face the first part 12 and the second part 14 in a non-contact state to detect the periodic changes in the magnetic field. Therefore, the detection device can detect the amount of relative rotational movement (or rotation angle, or offset, etc.) based on the periodic changes in the magnetic field.

[0177] in addition, Figure 3C The implementation shown is Figure 3B In the variant of the embodiment shown, the number of different magnetic pole portions 12 and 14 is different. Besides detecting relative rotational movement, it can also detect relative translational movement. Furthermore, it is compatible with... Figure 3B The implementation methods shown are the same, so detailed descriptions are omitted.

[0178] In addition, Figure 3D In the illustrated embodiment, a magnetic film 10 can also be formed on the inner surface of a cylindrical substrate 1. A first portion 12 and a second portion 14 with mutually different magnetic poles can be alternately formed along the circumferential direction X1 on the inner circumferential surface of the magnetic film 10. The substrate 1 is, for example, a substrate made of Co, and the magnetic film 10 can be formed on its inner circumferential surface by the molten salt impregnation method described above or a method using the molten salt impregnation method.

[0179] In this embodiment, the detection device shown in the figure is omitted (and... Figure 1 The detection device 110 shown is the same as the one shown. It is freely rotatable along the circumferential direction (relative movement direction) X1 and positioned at a predetermined distance from the inner circumferential surface of the cylindrical magnetic membrane 10. Figure 1 The distance C1 shown is the position. The detection device can detect changes in the periodic magnetic field by alternately facing the first part 12 and the second part 14 in a non-contact state when the cylindrical object part 120 rotates relative to it along the circumferential direction X1. Therefore, the detection device can detect the amount of relative rotational movement (or rotation angle, or offset, etc.) based on the changes in the periodic magnetic field.

[0180] In any of these embodiments, a magnetic film 10 having a main magnetic body layer 20 can be formed, the main magnetic body layer 20 having elongated columnar particles 22a in the film thickness direction perpendicular to the concave or convex curved surface. That is, a main magnetic body layer 20 having elongated columnar particles 22a in a direction substantially perpendicular to the tangent of the curved surface of the substrate 1 or the substrate layer can be formed.

[0181] Second Implementation Method

[0182] like Figure 4A1As shown, the position detection system 100 of this embodiment has the same structure as the embodiment described above, except as shown below, and achieves the same functional effects. Hereinafter, the parts that differ from the embodiment described above will be described.

[0183] The surface of the magnetic film 10 provided in the object component 120 of this embodiment has a groove pattern in which recessed portions 16 corresponding to grooves of a predetermined depth appear at predetermined intervals along the X-axis in a predetermined stripe pattern. A raised portion 17 is formed between adjacent recessed portions 16. The magnetic film 10 has alternating recessed portions 16a and raised portions 17a along the X-axis, and their surfaces are magnetized in such a way that the same magnetic pole surfaces appear.

[0184] When the target component 120 moves relative to the magnetic sensor 112, the magnetic sensor 112 can detect the periodic change of the magnetic field that changes at the position of the concave portion 16. Based on this periodic change of the magnetic field, the relative position (including the amount of movement) of the magnetic sensor 112 relative to the target component 120 is accurately detected. Furthermore, the groove depth D1 of the concave portion 16 of the magnet film 10 relative to the convex portion 17 is determined in such a way that the magnetic sensor 112 can detect changes in the magnetic field at positions facing each other with the convex portion 17 and with the concave portion 16. For example, the groove depth D1 of the concave portion 16 is greater than 1 μm, preferably 3 μm or more or 5 μm or more, and may also be 0.02 times, 0.04 times, 0.2 times, or 1 times or more of the width W4 of the groove.

[0185] Furthermore, when the groove depth D1 is greater than or equal to the thickness T1 of the magnet film 10, it becomes a portion of the magnet film arranged at predetermined intervals along the relative movement direction (see description below). Figure 4H The structure is the same as that described in the first embodiment. Furthermore, the preferred ratio (D1 / T1) of the groove depth D1 to the thickness T1 of the magnet film varies depending on the thickness T1 of the magnet film. When the thickness T1 of the magnet film is 50 μm or more, it can be 0.1 or more, or 0.5 or more. When the thickness T1 of the magnet film is thinner (e.g., 10 to 50 μm), it is preferably 0.2 or more, for example, 0.3 or more, 0.4 or more, or 0.5 or more. In this embodiment, the thickness T1 of the magnet film 10 only needs to be 10 μm or more, and can also be 300 μm or more, for example, 10 to 500 μm, but it is preferably the same as the first embodiment described above.

[0186] The recessed portion 16 on the surface of the magnet film 10 can be obtained, for example, by means of... Figure 2BThe magnet preparation film 10a shown is formed by heat treatment and then etching the surface in a predetermined pattern. The surface of the raised and recessed pattern is then magnetized so that the same magnetic poles are formed. The etching process can be performed, for example, in a pattern of 0.5 mm or less, and the combined width W2a of the paired portions 16 and 17 can be greater than... Figure 1 The combined width W2 of the paired portions 12 and 14 shown is further reduced. Therefore, higher precision position detection is also possible. The recessed portion 16 can also be formed using an end mill or micro-blasting.

[0187] In addition, in this embodiment, such as Figure 4A2 As shown, the magnet film 10 can also be multipole magnetized in accordance with the groove pattern (convex and concave pattern), in which case the detection sensitivity is further improved.

[0188] Third Implementation Method

[0189] like Figure 4B As shown, the position detection system with object component 120 in this embodiment, in addition to those shown below, has the same characteristics as described above. Figure 4A1 The embodiments shown have the same structure and achieve the same effects. Hereinafter, the differences from the embodiments described above will be explained.

[0190] In this embodiment, a repeating concave-convex pattern corresponding to the groove pattern of the concave portion 16 and the convex portion 3 corresponding to the convex portion 17 is formed on the surface of the substrate 1, which serves as the substrate layer. A magnetic film 10 is formed on the surface of the substrate 1 with a substantially constant thickness. This magnetic film 10 can be formed, for example, by molten salt impregnation or a method using molten salt impregnation, such as by... Figures 4C1 to 4C3 The process shown is used to make it.

[0191] First, such as Figure 4C1 As shown, prepare and Figure 2A The substrate 1 shown is the same as the substrate 1 shown, such as Figure 4C2 As shown, on its surface, a repeating pattern of recesses 2 and protrusions 3 is alternately formed along the X-axis by etching or the like. Then, as... Figure 4C3 As shown, a magnet preparation film 10a with approximately constant thickness is formed by means of the above-described molten salt impregnation method or a method using the molten salt impregnation method, along a repeating pattern of alternating concave portions 2 and convex portions 3 formed along the X-axis.

[0192] Next, heat treatment is performed, and then the surface of the raised and recessed pattern is magnetized in such a way that they become identical magnetic poles, thereby obtaining... Figure 4B The magnet film 10 shown. The direction of the easy magnetization axis of the magnet film 10 obtained by the method of this embodiment is approximately perpendicular to the surface of the uneven pattern on the substrate 1. Therefore, it is consistent with... Figure 4A1The orientation of the easy magnetization axis of the magnet film 10 shown is slightly different.

[0193] For example in Figure 4A1 In the magnet film 10 shown, even at the boundary between the convex portion 17 and the concave portion 16, the easy magnetization axis faces the same direction, but... Figure 4B In the magnet film 10 shown, at the boundary between the convex portion 17 and the concave portion 16, the direction of the easy magnetization axis is different from the other directions.

[0194] In this embodiment, without processing the surface of the magnet film 10, it is easy to form a raised or recessed pattern on the surface of the magnet film 10.

[0195] Fourth Implementation Method

[0196] like Figure 4D As shown, the position detection system with object component 120 in this embodiment, in addition to those shown below, has the same characteristics as described above. Figure 4B The embodiments shown have the same structure and achieve the same effects. Hereinafter, the differences from the embodiments described above will be explained.

[0197] In this embodiment, the pattern width of the recess 2 in the repeating embossed pattern formed on the surface of the substrate 1 is wider than the pattern width of the protrusion 3 in the repeating embossed pattern. As a result, the change in the magnetic field detected by the magnetic sensor 112 along the relative movement direction is larger, and the position detection accuracy is improved. In addition, the groove wall 4 from the top wall of the protrusion 3 to the adjacent recess 2 in the repeating embossed pattern is tapered, and the distance between the groove walls 4 on both sides of the recess 2 (groove width) is configured to extend toward the surface of the magnet film 10.

[0198] In this embodiment, a magnetic film 10 of approximately constant thickness is formed on the surface of the substrate 1. Corresponding to the concave-convex pattern of the substrate 1, including the groove walls 4, the magnetic film 10 is formed along the X-axis. The magnetic film 10 has a repeating pattern of concave portions 16, conical portions 18, and convex portions 17. In this embodiment, the surfaces of the concave portions 16 and conical portions 18 are magnetized, for example, to form N poles, and the surface of the convex portions 17 is magnetized to form S poles. Magnetization can be performed using the same method as described above.

[0199] In this embodiment, a tapered portion 18 is provided at the boundary between the convex portion 17 and the concave portion 16. The direction of the easy magnetization axis of the concave portion 16 is approximately perpendicular to the bottom surface of the concave portion 2 of the substrate 1, and the direction of the easy magnetization axis of the tapered portion 18 is approximately perpendicular to the bottom surface of the groove wall 4 of the substrate 1. As a result, the magnetic film 100 provided in the tapered portion 18 is easily magnetized, and the magnetic lines of force generated from the surfaces of the concave portion 16 and the tapered portions 18 located on both sides of it, moving outwards, are concentrated toward the magnetic sensor 112. Therefore, in this embodiment, the change in the magnetic field detected by the magnetic sensor 112 along the X-axis, which is the relative movement direction, is larger and less susceptible to noise, thus improving the position detection accuracy.

[0200] Furthermore, the cross-section of the groove pattern of the recess 2 formed on the surface of the substrate 1 is not particularly limited, and it may be a shape that is close to having at least a portion of any one of a rectangle, trapezoid, semicircle, semi-ellipse, or semi-oblong.

[0201] Fifth Implementation Method

[0202] like Figure 4E As shown, the position detection system with object component 120 in this embodiment, in addition to those shown below, has the same characteristics as described above. Figure 4B The embodiments shown have the same structure and achieve the same effects. Hereinafter, the differences from the embodiments described above will be explained.

[0203] In this embodiment, such as Figure 4E As shown, the magnetic film 10 of the object component 120 has multiple partial magnetic films 19, which are arranged intermittently at predetermined intervals along the X-axis, which is the direction of relative movement. The surface of the object component 120 located between the adjacent partial magnetic films 19 exposes the surface of the substrate 1, and has a surface composed of a component that does not substantially contain any of the elements constituting the partial magnetic films 19. For example, the partial magnetic films 19 contain rare earth elements, but the surface of the substrate 1 located between the partial magnetic films 19 does not substantially contain rare earth elements. This is because the surface of the substrate 1 is composed of a transition metal such as Co.

[0204] Furthermore, "substantially free of" means that the surface of substrate 1 may contain impurities in a range that is specifically defined as a phase different from the magnet film 10. For example, the surface of substrate 1 may contain less than 1% by mass of rare earth elements. Whether the surface of substrate 1 located between portions of the magnet film 19 is substantially free of rare earth elements and other elements can be determined, for example, by EDS.

[0205] As in Figure 4E The method of forming a partial magnet film 19 along the X-axis on the surface of the substrate 1 shown is, for example, as... Figure 4C3 As shown, after forming a magnet preparative film 10a with a substantially constant film thickness on the surface of the substrate 1, which has alternating recesses 2 and protrusions 3 along the X-axis, the following steps are performed: Figure 4C4 The steps shown are sufficient. Figure 4C4 In the process shown, the magnet preparation film 10a located on the protrusion 3 is removed by etching or grinding, leaving only a portion of the magnet preparation film 10a1 located in the recess 2.

[0206] Then, by using the same method as in the above-described implementation, a portion of the magnet preparation film 10a1 is transformed into... Figure 4E The partial magnetic film 19 shown is sufficient. Specifically, the partial magnetic film 19 is formed on the surface of the substrate 1 through processes such as heating and magnetization. Furthermore, although the same applies in the above embodiment, it is also possible to... Figure 4C3 After the magnet preparatory film 10a shown is transformed into the magnet film 10, the surface of the magnet film 10 is etched or ground to form a partial magnet film 19.

[0207] In this embodiment, the surface of a portion of the magnet 19 and the surface of the substrate 1, which serves as the magnetic body, are substantially flush with each other, forming a plane or curved surface. This configuration allows, for example, a smooth surface to be made of the intended object 120 for position detection. For example, it can be applied to position detection of portions of objects with smooth surfaces, such as robotic arms. Furthermore, "substantially flush" means that it may also have slight irregularities depending on the application of the position detection system; for example, it may have irregularities to a degree that has a sufficiently small impact on detection accuracy.

[0208] The cross-section of the partial magnet film 19 is not particularly limited; for example, it can be a shape that approximates at least a portion of a rectangle, trapezoid, circle, ellipse, or oblong shape. For example, in Figure 4F In the partially magnetic film 19 shown, its cross-section is an inverted trapezoid. In the portion of the partially magnetic film 19 that connects to the conical groove wall 4, an easy magnetization axis of the magnetic film is formed in a direction approximately perpendicular to the groove wall. As a result, magnetic field lines extending outward from the surface of the partially magnetic film 19 concentrate in a direction that converges on the partially magnetic film 19. Therefore, along the X-axis, which is the direction of relative movement, the change in the magnetic field detected by the magnetic sensor (not shown) is relatively larger on the partially magnetic film 19 and on the protrusion 3 of the substrate, improving position detection accuracy.

[0209] As in Figure 4F The method of forming a partial magnet film 19 along the X-axis on the surface of the substrate 1 shown can, for example, involve anisotropic etching of a <100> Si substrate to form a groove with an inverted trapezoidal cross-section, followed by forming a Co film on the surface of the <100> Si substrate using a plating method or the like, and then using it as substrate 1. Then, it can also be combined with... Figure 4C3 and Figure 4C4 Using the same method shown, a partial magnet film 19 with an inverted trapezoidal cross-section is formed on the surface of substrate 1.

[0210] Sixth Implementation Method

[0211] like Figure 4G As shown, the position detection system with object component 120 in this embodiment, in addition to those shown below, has the same characteristics as described above. Figure 4E The embodiments shown have the same structure and achieve the same effects. Hereinafter, the differences from the embodiments described above will be explained.

[0212] In this embodiment, such as Figure 4G As shown, the surface of the object component 120 located between the adjacent partial magnet films 19 has a suppression surface of a diffusion suppression component 50 that suppresses the diffusion of a portion of the elements constituting the partial magnet films 19. In this embodiment, the diffusion suppression component 50 is formed intermittently along the X-axis direction, and the partial magnet films 19 are formed on the surface of the substrate 1 where the diffusion suppression component 50 is not formed.

[0213] The diffusion suppression component 50 is composed of a patterned film, which is made of a material that suppresses the diffusion of rare earth elements contained in the reaction solution used in the diffusion process of the above embodiment on the surface of the substrate.

[0214] The specific material of the diffusion suppression component 50 can be, for example, the same material used in the high-melting-point material mask described above, such as W, Ta, Nb, Mo, or alloys containing at least one of these elements. The thickness of the diffusion suppression component 50 is not particularly limited, but is sufficient to suppress the diffusion of rare earth elements from the diffusion source on the surface of the substrate 1 covered by the component 50. Furthermore, the diffusion suppression effect does not necessarily need to be complete. It is sufficient that the diffusion of rare earth elements is suppressed to the extent that a change in the magnetic field detected by the magnetic sensor is detected in the portion forming the partial magnet film 19 and the surface of the diffusion suppression component 50.

[0215] By using the diffusion suppression component 50, the surface of the magnetic film 19 can be easily formed at predetermined intervals along the relative movement direction without processing. In this embodiment, the surface of the partial magnetic film 19 protrudes more than the surface of the diffusion suppression component 50. With this configuration, when the magnetic sensor and the target component 120 move relative to each other, the distance between the partial magnetic film 19 and the magnetic sensor is closer than the distance between the diffusion suppression component 50 and the magnetic sensor. As a result, the change in the magnetic field detected by the magnetic sensor on both the surface of the partial magnetic film 19 and the surface of the diffusion suppression component 50 increases, further improving the detection accuracy.

[0216] Seventh Implementation Method

[0217] like Figure 4H As shown, the position detection system with object component 120 in this embodiment, in addition to those shown below, has the same characteristics as described above. Figure 4G The embodiments shown have the same structure and achieve the same effects. Hereinafter, the differences from the embodiments described above will be explained.

[0218] In this embodiment, for example, Figure 4H As shown, a diffusion suppression film 50, which is continuous along the X-axis, is formed on the surface of the substrate 1b. On this film, partial magnetic films 19 are formed at predetermined intervals along the X-axis. In this embodiment, the substrate 1b does not necessarily need to be made of a transition metal such as Co, and may also be other magnetic or non-magnetic materials.

[0219] In order to make Figure 4H The structure of the partial magnet film 19 shown is, for example, as Figure 4Ha As shown, for example, a patterned film 19a made of a transition metal such as Co is formed at predetermined intervals along the X-axis on the surface of a diffusion suppression member 50 formed on a substrate 1b made of stainless steel. The patterned film 19a can be formed by plating or etching, but it can also be formed on the surface of the diffusion suppression member 50 by other methods. Then, the patterned film 19a made of the transition metal is subjected to the aforementioned reactive diffusion process, heat treatment process, and magnetization process to transform the patterned film 19a into... Figure 4H The magnetic membrane 19 is shown.

[0220] In this embodiment, the change in magnetic field detected by the magnetic sensor is also increased on the surface of the partial magnet film 19 and the surface of the diffusion suppression component 50, further improving the detection accuracy. Furthermore, materials other than transition metals can be used as the substrate 1b.

[0221] Eighth Implementation Method

[0222] like Figure 4I As shown, the position detection system with object component 120 in this embodiment has the same structure as any of the embodiments described above, except as shown below, and achieves the same functional effects. Hereinafter, the differences from the embodiments described above will be explained.

[0223] In this embodiment, the surface of the magnetic film 10 provided by the object component 120 has a groove pattern. This groove pattern appears at predetermined intervals along the X-axis, which is the relative direction of movement, with recessed portions 16 corresponding to grooves of a predetermined depth D2. Protruding portions 17 are formed between the recessed portions 16. Furthermore, the predetermined depth D2 of these recessed portions 16 is, for example, more than one time the width W4 of the recessed portion 16. The portion of the magnetic film 10 located at the top of the protruding portions 17 between the recessed portions 16 becomes a partial magnetic film 19 with the same magnetic pole surface.

[0224] When the depth D2 of the concave portion 16 is greater than the width W4 of the concave portion 16, the magnetic field generated by the portion of the magnetic film 10 located at the top of the convex portion 17 is easily detected by the magnetic sensor 112. This is because, in contrast, the bottom of the concave portion 16 is far from the magnetic sensor 112, and the magnetic flux generated by the concave portion 16 passes through the sidewalls of the concave portion 16; therefore, the magnetic field detected by the magnetic sensor 112 is very small. In addition, the sidewalls of the concave portion 16 are almost unmagnetized. Therefore, the portion of the magnetic film 10 located at the top of the convex portion 17 can achieve the same effect as the portions of the magnetic film 19 arranged at predetermined intervals along the relative movement direction.

[0225] Ninth Implementation Method

[0226] like Figure 4J As shown, the position detection system with object component 120 in this embodiment has the same structure as any of the embodiments described above, except as shown below, and achieves the same functional effects. Hereinafter, the differences from the embodiments described above will be explained.

[0227] In this embodiment, for example is Figure 3A In a variation of the embodiment shown, partial magnetic films 19 are intermittently formed on the surface of a cylindrical substrate layer 1a fixed to the outer periphery of the shaft 40 along a circumferential direction X1, which is the direction of relative movement. The partial magnetic films 19 are magnetized such that the magnetic poles on their surfaces are identical along the circumferential direction X1. As a method for magnetizing the partial magnetic films 19, for example, small magnetizing coils can be used to magnetize each partial magnetic film individually.

[0228] The method for fabricating the partial magnet film 19 is the same as that for any of the above embodiments. The easy magnetization axis of each partial magnet film 19 is oriented in a direction (radial direction) that is substantially perpendicular to the surface of the substrate layer 1A.

[0229] In this embodiment, the detection device shown in the figure is omitted (and... Figure 1The detection device 110 shown is configured to rotate freely relative to the outer peripheral surface of a portion of the magnetic film 19 at a predetermined distance, rotating relative to it in the circumferential direction (relative movement direction) X1. When the target component 120 rotates relative to the detection device in the circumferential direction X1, it alternately faces the outer peripheral surface of the portion of the magnetic film 19 at a predetermined distance and the surface of the substrate layer 1a where the portion of the magnetic film 19 is not present in a non-contact state, allowing the magnetic sensor to detect periodic changes in the magnetic field. Therefore, the detection device can detect the amount of relative rotational movement (or rotation angle, or offset, etc.) based on the periodic changes in the magnetic field.

[0230] Tenth Implementation Method

[0231] like Figure 4K As shown, the position detection system with object component 120 in this embodiment has the same structure as any of the embodiments described above, except as shown below, and achieves the same functional effects. Hereinafter, the differences from the embodiments described above will be explained.

[0232] In this embodiment, for example is Figure 3A In a variation of the embodiment shown, at least one surface of the shaft 40 is made of a transition metal such as Co, and is intermittently formed along the circumferential direction X1, which is the direction of relative movement, such that a portion of the magnetic film 19 is embedded in its circumferential surface. The portion of the magnetic film 19 is magnetized such that the magnetic poles on its surface are identical along the circumferential direction X1.

[0233] The method for manufacturing the partial magnet film 19 is the same as that for any of the above embodiments, especially with... Figure 4F The partial magnet film 19 shown is manufactured in the same way, and the partial magnet film 19 has the same easy magnetization axis.

[0234] In this embodiment, the detection device shown in the figure is omitted (and... Figure 1 The detection device 110 shown is configured to rotate freely relative to the outer peripheral surface of a portion of the magnetic film 19 at a predetermined distance, rotating relative to it in the circumferential direction (relative movement direction) X1. When the target component 120 rotates relative to the detection device in the circumferential direction X1, it alternately faces the outer peripheral surface of the portion of the magnetic film 19 at a predetermined distance and the surface of the substrate layer 1a where the portion of the magnetic film 19 is not present in a non-contact state, allowing the magnetic sensor to detect periodic changes in the magnetic field. Therefore, the detection device can detect the amount of relative rotational movement (or rotation angle, or offset, etc.) based on the periodic changes in the magnetic field.

[0235] Eleventh Implementation Method

[0236] like Figure 5A and Figure 5B As shown, the position detection system 200 of this embodiment has the same structure as the position detection system 100 of any of the above embodiments, except as shown below, and achieves the same functional effects. Hereinafter, the parts that differ from the embodiments described above will be described. Furthermore, in Figure 5A In the following embodiments, unlike the accompanying drawings, the detection device 111 is arranged on the lower side along the Z-axis, and the object component 121 is arranged on the upper side. However, including the embodiments described above, the arrangement relationship between the detection device and the object component is not particularly limited, and they can also be arranged in a left-right or inclined direction. In the following description, the arrangement relationship shown in the figures will be used as a reference.

[0237] In this embodiment, the magnetic film 10 is not provided in the detection target component (hereinafter also referred to as the target component) 121, but is provided in the magnetic detection device (hereinafter also referred to as the detection device) 111. The detection device 111 has a substrate 1c made of magnetic components.

[0238] The substrate 1c is the same as substrates 1, 1b, or substrate layer 1a in the above embodiments, and at least a substrate layer made of transition metal is formed on its surface. Similar to any of the above embodiments, a magnetic film 10 is formed on a portion of its surface (in this embodiment, along the Z-axis on the upper side and along the X-axis at the center). A circuit board 114 is fixed to the surface of the magnetic film 10 by means of bonding or the like, and a magnetic sensor 112 is fixed to the circuit board 114. That is, a substrate 1c with magnetic components on its surface is disposed on the opposite side of one side of the circuit board 114 where the magnetic sensor 112 is disposed.

[0239] The object component 121 has an element component 60, on which a groove pattern is formed on the surface (lower surface along the Z-axis) 60a of the element component 60. This groove pattern appears at predetermined intervals and in a predetermined pattern along the X-axis, which is the direction of relative movement, with recesses 62 corresponding to grooves of predetermined depth. In the element component 60, at least the surface 60a is made of a magnetic material, allowing for [the following text is missing: "…"] Figure 5A The double-dotted line indicates the passage of magnetic flux. Furthermore, in the object component 121, the side facing the detection device 111 is designated as a surface, and conversely, in the detection device 111, the side facing the object component 121 is designated as a surface.

[0240] Element component 60 may be part of object component 121 or object component 121 itself. In the case where element component 60 is part of object component 121, for example, it may also have a mounting or fixing part on the back side of element component 60 (the upper surface along the Z-axis in the figure) 60b for detaching and mounting relative to the component (another part of object component) to be detected in terms of relative movement.

[0241] The mounting or fixing part formed on the back surface 60b can be a magnetic film formed by the same method as in the above-described embodiment, or it can be double-sided tape, an adhesive layer, a welded part, etc. By making the element component 60 easy to mount and dismount, the element component 60 can be easily installed at the necessary detection location, and the position detection system 200 can be easily constructed.

[0242] In this embodiment, the length W5 of the substrate 1c, which is a magnetic component, along the X-axis, which is the direction of relative movement, is approximately an integer multiple of half the sum W2b of the width W6 of the protrusion 64 located between adjacent grooves on the surface of the element component 60 and the width W7 of the recess 62 corresponding to the groove.

[0243] In this embodiment, the surface of the magnet film 10 can be magnetized with the same magnetic poles, or it can be magnetized in such a way that different magnetic pole surfaces alternate along the relative movement direction. Preferably, the surface of the magnet film 10 is magnetized with the same magnetic poles. The easy magnetization axis of the magnet film 10 is a direction that is substantially perpendicular to the surface of the substrate 1C.

[0244] With this configuration, in this embodiment, the object component 121 does not have a magnet membrane 10, and the magnetic sensor 112 can easily detect the change in the magnetic field from the magnet membrane 10 of the detection device 111 toward the surface (magnetic component) of the element component 60 along the relative movement direction.

[0245] For example, in Figure 5A The magnetic field strength detected by the magnetic sensor 112 at the relative position shown, and its relationship with the magnetic field at the position shown. Figure 5B The magnetic sensors 112 at the relative positions shown detect different magnetic field strengths. Therefore, along the X-axis, which is the direction of relative movement, the magnetic sensors 112 can periodically detect changes in the magnetic field formed between the magnetic film 10 of the detection device 111 and the detection surface of the object component 121, thereby improving the position detection accuracy.

[0246] Figure 5A The detection device 111 shown can be manufactured, for example, as follows.

[0247] like Figure 6A As shown, firstly, substrate 1c is prepared. This substrate 1c and... Figure 2A The substrate 1 shown is the same, so detailed descriptions are omitted. Next, as... Figure 6BAs shown, a magnet preparation film 10a is formed on the surface of substrate 1. This magnet preparation film 10a and... Figure 2B The magnet preparation film 10a shown is the same and can be fabricated using the same method. However, in this embodiment, as... Figure 6C As shown, the magnet preparation film 10a is etched along the X-axis with the necessary width.

[0248] Next, the magnet preparation film 10a is subjected to reaction diffusion treatment, heat treatment, magnetization treatment, etc., in the same manner as in the above-described embodiment, such as... Figure 6D As shown, a magnetic membrane 10 is obtained. Then, a circuit board 114 on which a magnetic sensor 112 is mounted is fixed on the magnetic membrane 10, thereby obtaining a detection device 111.

[0249] Twelfth Implementation Method

[0250] like Figure 7A As shown, the position detection system 200 of this embodiment has the same structure as the position detection system 100 or 200 of any of the above embodiments, except as shown below, and achieves the same functional effects. Hereinafter, the parts that differ from the embodiments described above will be explained.

[0251] In this embodiment, by means of... Figure 4F The same manufacturing method is used in the embodiment shown, in which a single partial magnet film 19 is formed on the surface of the substrate 1c, and a circuit board 114 on which the magnetic sensor 112 is mounted is fixed.

[0252] In this embodiment, the magnetic field lines moving from the surface of the partial magnet film 19 toward the protrusion 64 converge in a direction that converges on the partial magnet film 19. Therefore, along the X-axis, which is the relative direction of movement, the change in the magnetic field detected by the magnetic sensor 112 is relatively larger at the positions opposite to the protrusion 64 and opposite to the concave portion 62, thus improving the position detection accuracy.

[0253] Thirteenth Implementation Method

[0254] like Figure 7B As shown, the position detection system 200 of this embodiment has the same structure as the position detection system 100 or 200 of any of the above embodiments, except as shown below, and achieves the same functional effects. Hereinafter, the parts that differ from the embodiments described above will be explained.

[0255] In this embodiment, a magnetic film 10 is provided on the surface of the substrate 1c, and a circuit board 114 is fixed thereon. Magnetic sensors 112a and 112b are arranged on the circuit board 114 at a predetermined distance along the X-axis.

[0256] The distance between magnetic sensors 112a and 112b is set so that one magnetic sensor 112a is positioned facing the protrusion 64, and the other magnetic sensor 112b is positioned facing the concave portion 62 (with a phase angle of 180 degrees). The two magnetic sensors 112a and 112b can also be sensors of the same type. The surface of the magnet membrane 10 is magnetized so that it forms the same magnetic poles along the X-axis.

[0257] In this embodiment, the detection accuracy is further improved by having two magnetic sensors 112a and 112b. Furthermore, in this embodiment, the magnetic sensor 112b is positioned relative to the magnetic sensor 112a at a distance from the magnetic sensor 112a. Figure 7B Positions closer to the indicated position (positions with a phase angle of 90 degrees) can also detect the direction of movement. For example, it can also detect whether the object component 121 is moving to the right or left relative to the detection device 111 along the X-axis, or other movement directions.

[0258] Fourteenth Implementation Method

[0259] like Figure 7C As shown, the position detection system 200 of this embodiment has the same structure as the position detection system 100 or 200 of any of the above embodiments, except as shown below, and achieves the same functional effects. Hereinafter, the parts that differ from the embodiments described above will be explained.

[0260] In this embodiment, a substrate 1c and a magnetic film 10 are embedded on the back side of the circuit board 114. The magnetic film 10 is positioned corresponding to the magnetic sensor 112. In this embodiment, the change in the magnetic field detected by the magnetic sensor 112 along the X-axis, which is the relative direction of movement, is relatively larger at the positions opposite the protrusion 64 and opposite the recess 62, thus improving the position detection accuracy. Furthermore, by embedding the magnetic film 10 in the substrate 1c, the detection device 111 can be further miniaturized.

[0261] Fifteenth Implementation Method

[0262] like Figure 7D As shown, the position detection system 200 of this embodiment has the same structure as the position detection system 100 or 200 of any of the above embodiments, except as shown below, and achieves the same functional effects. Hereinafter, the parts that differ from the embodiments described above will be explained.

[0263] In this embodiment, at least two partial magnet films 19 are intermittently provided on the surface of the substrate 1c along the X-axis direction, and each magnetic sensor 112a, 112b is disposed on each partial magnet film 19 with respect to the circuit board 114.

[0264] The distance between magnetic sensors 112a and 112b is set so that one magnetic sensor 112a is positioned face-to-face with the protrusion 64, and the other magnetic sensor 112b is positioned face-to-face with the adjacent protrusion 64. The two magnetic sensors 112a and 112b can also be of the same type. The surfaces of adjacent magnetic films 10 and 112b are magnetized in a manner that creates different magnetic poles.

[0265] In this embodiment, the detection accuracy is further improved by having two magnetic sensors 112a and 112b. For example, by performing subtraction processing on the signals from the two sensors 112a and 112b, noise detection (differential detection) that is not caused by the protrusion 64 can be eliminated, thus improving the detection accuracy.

[0266] Sixteenth Implementation Method

[0267] like Figure 7E As shown, the position detection system 200 of this embodiment has the same structure as the position detection system 100 or 200 of any of the above embodiments, except as shown below, and achieves the same functional effects. Hereinafter, the parts that differ from the embodiments described above will be explained.

[0268] In this embodiment, at least two partial magnet films 19 are intermittently provided on the surface of the substrate 1c along the X-axis direction, and a magnetic sensor 112a is disposed on the circuit board 114.

[0269] Alternatively, magnetic sensors 112a and 112b can be disposed on the respective magnetic films 19, separated by the circuit board 114. The distance between the magnetic sensors 112a and 112b is set such that one magnetic sensor 112a is positioned face-to-face with the protrusion 64, and the other magnetic sensor 112b is positioned face-to-face with the protrusion 64 located next to it. The two magnetic sensors 112a and 112b can also be sensors of the same type. The surfaces of adjacent magnetic films 10 and the surfaces of other magnetic films are magnetized in such a way that they form the same magnetic poles.

[0270] In this embodiment, by using two magnetic sensors 112a and 112b, and also utilizing... Figure 7D Similar effects further improve detection accuracy. Additionally, such as... Figure 7E As shown, even when a portion of the magnet film 19 is magnetized to the same orientation, it produces the same effect as... Figure 7D Similar effect, therefore, detection accuracy can be improved without multipole magnetization.

[0271] Alternatively, a magnetic sensor 112a can be disposed on one partial magnetic film 19, separated by a circuit board 114, and another magnetic sensor 112b can be disposed between the two partial magnetic films 19. When the distance between the magnetic sensors 112a and 112b is set such that the magnetic sensor 112b is located at the midpoint between the two partial magnetic films 19 (at a phase angle of 180 degrees), by performing subtraction processing on the signals of the two sensors 112a and 112b, noise that is not caused by the protrusion 64 can be eliminated for detection (differential detection), and the detection accuracy can be further improved.

[0272] When the distance between magnetic sensors 112a and 112b is set such that magnetic sensor 112b is positioned at a distance approximately equal to 1 / 4 of the distance between partial magnet films 19 and 19 (with a phase angle of 90 degrees or 270 degrees), the direction of movement can also be detected. For example, it is also possible to detect the direction of movement of object part 121 relative to detection device 111, such as whether it moves to the right or to the left along the X-axis.

[0273] Seventeenth Implementation Method

[0274] like Figure 7F As shown, the position detection system 200 of this embodiment has the same structure as the position detection system 100 or 200 of any of the above embodiments, except as shown below, and achieves the same functional effects. Hereinafter, the parts that differ from the embodiments described above will be explained.

[0275] In this embodiment, the substrate 1c having magnetic components has a relative recess 6a that is able to face the recess 62 of the target component 121 at a predetermined interval along the Z-axis, and at least a pair of relative protrusions 7a, 7b located on both sides of the relative recess 6a along the X-axis, which is the relative movement direction. In this embodiment, the relative protrusions 7a, 7b are respectively disposed at positions that can face each other with adjacent protrusions 64, 64. Along the X-axis of the substrate 1c, a magnetic film 10 is provided on the surface of one relative protrusion 7a, and a magnetic sensor 112 is provided on the other relative protrusion 7b. The surface of the magnetic film 10 provided on the relative protrusion 7a is disposed at a height position approximately equal to that of the magnetic sensor 112.

[0276] In this embodiment, the magnetic sensor 112 can effectively detect changes in the magnetic field between the magnetic film 10 formed on the detection device 111 and the detection surface of the target component 121 along the X-axis, which is the relative movement direction, thus improving position detection accuracy. Furthermore, with this configuration, the magnetic portion (protrusion 7a) of the magnetic film 10 and the magnetic portion (protrusion 7b) of the magnetic sensor 112 can be separated at a predetermined interval along the relative movement direction. Therefore, it is possible to combine it with any target component 121 to form a position detection system 200. For example, even if the detection device 111 and the target component 121 are manufactured separately, the position detection system 200 can be configured by adjusting the interval of the detection devices 111. The detection device 111 shown in this embodiment can also be manufactured, for example, by connecting the component of the substrate 1c equipped with the magnetic sensor 112 and the component of the substrate 1c equipped with the magnetic film 10.

[0277] Alternatively, in this embodiment, the detection device 111 may also have an adjustment mechanism that adjusts the spacing between a pair of opposing protrusions 7a and 7b along the X-axis, which is the direction of relative movement. With this configuration, the width of the opposing recesses 6a provided by the detection device 111 can be changed according to the width of the groove 62 formed on the detection surface of the target component 121, eliminating the need to prepare multiple detection devices 111 according to the conditions of the detection surface of the target component 121.

[0278] Eighteenth Implementation Method

[0279] like Figure 7G As shown, the position detection system 200 of this embodiment has the same structure as the position detection system 100 or 200 of any of the above embodiments, except as shown below, and achieves the same functional effects. Hereinafter, the parts that differ from the embodiments described above will be explained.

[0280] In this embodiment, the substrate 1c with magnetic components may also have opposing recesses 6a that are respectively positioned at predetermined intervals along the Z-axis opposite to adjacent recesses 62 of the target component 121, and at least one pair of opposing protrusions 7a, 7c located on both sides of the opposing recesses 6a along the relative movement direction. A magnetic film 10 is provided on the surface of the central opposing protrusion 7a, and a magnetic sensor 112 is disposed on the magnetic film 10, separated by a circuit board 114. The tops of the other two opposing protrusions 7c are disposed at approximately the same height as the magnetic sensor 112.

[0281] With this configuration, the magnetic sensor 112 can also effectively detect changes in the magnetic field between the magnet film 10 formed on the detection device 111 and the detection surface of the object component 121 along the X-axis, which is the direction of relative movement, thereby improving the position detection accuracy.

[0282] Alternatively, in this embodiment, the detection device 111 may also have an adjustment mechanism that adjusts the spacing between a pair of opposing protrusions 7a and 7c along the X-axis, which is the direction of relative movement. With this configuration, the width of the opposing recesses 6a and 6a provided by the detection device 111 can be changed according to the width of the groove 62 formed on the detection surface of the target component 121, eliminating the need to prepare multiple detection devices 111 according to the conditions of the detection surface of the target component 121.

[0283] Furthermore, this disclosure is not limited to the embodiments described above, and various changes can be made within the scope of this disclosure. For example, several of the embodiments described above can be combined to form another embodiment.

[0284] Example

[0285] Example 1

[0286] about Figure 1 The position detection system 100 shown investigates the changes in the thickness of the magnet membrane 10 and the magnetic flux density detected by the magnetic sensor 112 through simulation. Figure 1 The position detection system 100 shown is for... Figure 4A2 The position detection system 100 shown is the same as the embodiment in which the groove depth D1 is set to 0.

[0287] A Co substrate with a thickness of 500 μm was used as substrate 1, and an SmCo5 film with a thickness T1 = 10 μm, manufactured by the method shown in the first embodiment, was used as magnet film 10. Furthermore, magnet film 10 was multipole magnetized with a pole width W1 of 250 μm and a spacing W2 of 500 μm. The orientation degree of the easy axis of magnetization of magnet film 10 was 90%. The distance from the surface of magnet film 10 to magnetic sensor 112 was 0.1 mm.

[0288] The magnetic sensor 112 was moved along the surface of the magnetic film 10 at intervals of 0.1 mm. The difference between the maximum and minimum values ​​of the magnetic flux density detected by the magnetic sensor 112 was set as ΔmT and calculated through simulation. The results are shown in Table 1. Furthermore, during the simulation, the BH characteristics of an SmCo5 film with a thickness of T1 = 100 μm actually manufactured by the manufacturing method described in the first embodiment were measured using a BH tracer. The magnetic film 10 with the parameters shown in Table 1 was modeled using these BH characteristics, and the magnetic flux density at a distance of 0.1 mm from the surface of the magnetic film 10 was calculated using the electromagnetic field analysis software JMAG manufactured by JSOL Corporation.

[0289] [Table 1]

[0290]

[0291] Examples 2-6

[0292] Except that the thickness T1 of the magnet film 10 is set to 20-300 μm as shown in Table 1, the same procedure as in Example 1 is followed, and the difference between the maximum and minimum values ​​of the magnetic flux density detected by the magnetic sensor 112 is set as ΔmT and calculated by simulation. The results are shown in Table 1.

[0293] Comparative Example 1

[0294] Except that the thickness T1 of the magnet film 10 is set to 1 μm as shown in Table 1, the process is the same as in Example 1, and the difference between the maximum and minimum values ​​of the magnetic flux density detected by the magnetic sensor 112 is set as ΔmT and calculated by simulation. The results are shown in Table 1.

[0295] Rating 1

[0296] As shown in Table 1, it can be confirmed that when the thickness T1 of the magnet film 10 is 10 μm or more and 300 μm or less, preferably 15 μm or more, 20 μm or more, 30 μm or more, 50 μm or more, or 50 to 200 μm, the difference between the maximum and minimum magnetic flux density increases, making it effective for use in a position detection system. Furthermore, it can be confirmed that when the thickness is 200 μm or more, the increase in the ratio of the difference Δ between the maximum and minimum magnetic flux density decreases compared to 200 μm.

[0297] Examples 7-12 and Reference Example 1

[0298] Set the thickness T1 of the magnet film 10 to 10 μm or 100 μm, such as Figure 4A1 The groove (concave-convex portion) with a depth D1 = 1 to 90 μm is formed, and unipolar magnetization is performed without multipolar magnetization. Otherwise, it is performed in the same manner as in Example 1. The difference between the maximum and minimum values ​​of the magnetic flux density detected by the magnetic sensor 112 is set as ΔmT and calculated by simulation. The results are shown in Table 2A.

[0299] [Table 2A]

[0300]

[0301] Rating 2

[0302] By referring to Reference Example 1 and Examples 7-12 shown in Table 2A, it can be confirmed that when a groove is formed on the unipolar magnetized magnetic film 10, the groove depth D1 is preferably 5 μm or more, and D1 / W4 is preferably 0.02 or more, 0.04 or more, or 0.2 or more. Furthermore, it can be confirmed that the preferred ratio (D1 / T1) of the groove depth D1 to the thickness T1 of the magnetic film also varies depending on the thickness T1 of the magnetic film. When the thickness T1 of the magnetic film is 50 μm or more, the ratio can be 0.1 or more, or 0.5 or more. When the thickness T1 of the magnetic film is thin (e.g., 10-50 μm), it is preferably greater than 0.2 times, for example, preferably 0.3 times or more, 0.4 times or more, or 0.5 times or more.

[0303] Examples 10A and 10

[0304] like Figure 4A2 As shown, except that it is set to multipole magnetization instead of unipole magnetization, it is performed in the same way as in Example 10. The difference between the maximum and minimum values ​​of the magnetic flux density detected by the magnetic sensor 112 is set as ΔmT and calculated by simulation. The results are shown in Table 2B.

[0305] Rating 3

[0306] As shown in Table 2B, it can be confirmed that by setting it to multipole magnetization, the difference Δ between the maximum and minimum magnetic flux density increases.

[0307] [Table 2B]

[0308]

[0309] Examples 20-24 and Comparative Example 2

[0310] like Figure 5A and Figure 5B As shown, in the position detection system 100 in which the gear-shaped element 60 moves relative to the magnet film 10 along the X-axis direction (and also in the circumferential direction), except as described below, the same procedure as in Example 1 was performed, and ΔmT was calculated by simulation. The results are shown in Table 3.

[0311] In Examples 20-24 and Comparative Example 2, a Co substrate with a thickness of 0.2 mm and a width of W5 = 10 mm was used as substrate 1c, and an SmCo5 film with a thickness of T1 = 5 to 300 μm and a width of W8 = 5 mm, manufactured by the method shown in the first embodiment, was used as magnet film 10.

[0312] Furthermore, the width W6 of the protrusion 64 in the gear-shaped element 60 is 1.396 mm, and the width W7 of the recess 62 corresponding to the groove is 1.745 mm. The depth D3 of the gear-shaped groove is 2 mm, and the thickness of the gear (the thickness of the element 60 in the Y-axis direction) is 5 mm. The distance from the surface of the magnetic sensor 112 to the magnetic film 10 is 0.1 mm, and the distance from the surface of the magnetic sensor 112 to the front end of the protrusion 64 is 0.1 mm.

[0313] The gear-shaped element 60 is moved along the surface of the magnet membrane 10 while maintaining a 0.2 mm interval. The difference between the maximum and minimum magnetic flux density detected by the magnetic sensor 112 is set as ΔmT and calculated through simulation. The results are shown in Table 3.

[0314] [Table 3]

[0315]

[0316] Rating 4

[0317] As shown in Table 3, it can be confirmed that in the position detection system 100 in which the gear-shaped element 60 moves relative to the magnet film 10 along the X-axis direction (and the same in the circumferential direction), the difference between the maximum and minimum values ​​of the magnetic flux density can also be detected. Similar to the above embodiment, it can be used as a position sensor, etc.

[0318] Explanation of reference numerals in the attached figures

[0319] 1, 1b, 1c…substrate (base layer), 1a…base layer, 1α…surface, 2…recess, 3…convex, 4…groove wall, 6a~6b…opposite recess, 7a~7d…opposite convex, 10…magnetic film, 10a…magnetic pre-film, 10b…magnetic film, 12…first part, 14…second part, 16…recess, 17…convex, 18…conical part, 19…partial magnet film, 19a…patterned film, 20…main magnetic layer, 22…crystalline particles, 22a…columnar particles, 22a1…through-type particles, 22a2 …Non-penetrating particles, 22b…Non-columnar particles, 23…Grain boundaries, 24…Surface-side end, 25…Back-side end, 30a, 30b…Secondary magnetic layer, 40…Axis, 50…Diffusion suppression component, 60…Element component, 60a…Surface, 60b…Back side, 62…Recess, 64…Protrusion, 100, 200…Position detection system, 110, 111…Magnetic detection device (detection device), 112, 112a, 112b…Magnetic sensor, 114…Circuit board, 120, 121…Detection object component (object component).

Claims

1. A position detection system, wherein, The position detection system has the following features: The detection device includes a magnetic sensor for detecting changes in the magnetic field; and An object component, which is positioned face-to-face with the magnetic sensor at a predetermined interval and is movable relative to the magnetic sensor, The object component or the detection device has a magnetic film with a thickness of 10 μm to 300 μm. The magnet film is placed on the surface of the substrate layer.

2. The position detection system according to claim 1, wherein, The magnet film has an SmCo5 film.

3. The position detection system according to claim 2, wherein, Sm2Co is present between the magnet film and the substrate layer. 17 membrane.

4. The position detection system according to claim 1, wherein, The easy magnetization axis in the magnet film is oriented in a direction perpendicular to the surface of the substrate layer, and the orientation degree of the easy magnetization axis is more than 90%.

5. The position detection system according to claim 1, wherein, The surface of the magnetic membrane of the object component is magnetized in such a way that different magnetic pole surfaces alternately appear along the relative movement direction.

6. The position detection system according to claim 1, wherein, The surface of the magnetic film of the object component has a groove pattern with grooves of a predetermined depth appearing at predetermined intervals and in a predetermined pattern along the relative movement direction, and is magnetized in such a way that the same magnetic pole surfaces appear.

7. The position detection system according to claim 6, wherein, The surface of the substrate layer has a repeating raised and recessed pattern corresponding to the groove pattern.

8. The position detection system according to claim 1, wherein, The surface of the magnetic film of the object component has a groove pattern in which grooves of a predetermined depth appear at predetermined intervals and in a predetermined pattern along the relative movement direction, and is magnetized in such a way that different magnetic pole surfaces appear alternately corresponding to the groove pattern.

9. The position detection system according to claim 1, wherein, The magnet membrane of the object component has a plurality of partial magnet membranes arranged intermittently at predetermined intervals along the relative movement direction.

10. The position detection system according to claim 9, wherein, The surface of the object component located between the adjacent partial magnet films has a surface composed of a component that does not substantially contain any of the elements constituting the partial magnet films.

11. The position detection system according to claim 10, wherein, The surface of the partial magnet and the surface of the magnetic body are substantially flush planes or curved surfaces.

12. The position detection system according to claim 9, wherein, The surface of the object component located between the adjacent partial magnet films has a diffusion-suppressing surface that suppresses the diffusion of a portion of the elements constituting the partial magnet films.

13. The position detection system according to claim 12, wherein, The surface of the partial magnet film protrudes more than the suppression surface.

14. The position detection system according to claim 1, wherein, The surface of the magnet film of the object component has a groove pattern in which grooves of a predetermined depth and at predetermined intervals appear in a predetermined pattern along the relative movement direction. The specified depth of the groove is more than 0.02 times the width of the groove, and the portion of the magnetic film located at the top of the protrusion is magnetized in such a way that the same magnetic pole surface appears, and the protrusion is located between the grooves.

15. The position detection system according to any one of claims 1 to 3, wherein, The detection device has a magnetic component made of magnetic material. The magnetic film is formed on the surface of at least a portion of the magnetic component.

16. The position detection system according to claim 15, wherein, The object component has an element component, the element component having a groove pattern on its surface with grooves of a predetermined depth appearing at predetermined intervals and in a predetermined pattern along the relative movement direction, the surface of the element component being made of a magnetic material.

17. The position detection system according to claim 15, wherein, The detection device has the magnetic component disposed on the opposite side of one side of the circuit board on which the magnetic sensor is disposed.

18. The position detection system according to claim 15, wherein, The surface of the magnet membrane is magnetized in such a way that different magnetic pole surfaces alternate along the relative direction of movement.

19. The position detection system according to claim 16, wherein, The length of the magnetic component along the relative direction of movement is approximately an integer multiple of half the sum of the width of the protrusion located between adjacent slots of the object component and the width of the recess corresponding to the slot.

20. The position detection system according to claim 19, wherein, The magnetic component has a relative recess that is able to face the recess of the object component at a predetermined interval, and a pair of relative protrusions located on both sides of the relative recess along the relative movement direction. The magnetic film is provided on the surface of one relative protrusion, and the magnetic sensor is provided on the other relative protrusion.

21. The position detection system according to claim 19, wherein, The magnetic component has a relative recess that is able to face the recess of the object component at a predetermined interval, and a pair of relative protrusions located on both sides of the relative recess along the relative movement direction. The magnetic film is provided on the surface of a relatively convex portion, and the magnetic sensor is disposed on the magnetic film. The top of the other opposing convex portion is positioned at approximately the same height as the magnetic sensor.

22. The position detection system according to claim 15, wherein, The magnet membrane has two or more intermittently along the relative movement direction.

23. A position detection system, wherein, The position detection system has the following features: The detection device includes a magnetic sensor for detecting changes in the magnetic field; and An object component, which is positioned face-to-face with the magnetic sensor at a predetermined interval and is movable relative to the magnetic sensor, The object component or the detection device has a magnetic film with a thickness of 10 μm or more. The magnet film is placed on the surface of the substrate layer. The surface of the magnet film of the object component has a groove pattern in which grooves of a predetermined depth and at predetermined intervals appear along the relative movement direction in a predetermined pattern.

24. A component for detecting an object, wherein, The detection target component has a detection part that can face the magnetic sensor at a predetermined interval, and is configured to move relative to the magnetic sensor. The part to be tested of the component to be tested has a magnetic film with a thickness of 10 μm to 300 μm disposed on the surface of the substrate layer.

25. A magnetic detection device, wherein, The magnetic detection device includes a magnetic sensor for detecting changes in the magnetic field and a magnetic component made of magnetic material. At least a portion of the surface of the magnetic component has a magnetic film with a thickness of more than 10 μm and less than 300 μm.

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