Display device

Abstract

Provided is a display device having excellent heat dissipation properties. A wavelength conversion substrate (3A) is provided with: a transparent substrate (31) having a first main surface and a second main surface; a partition layer (34) provided on the first main surface and having a plurality of first through-holes aligned in a first direction and a second direction that intersect each other; a plurality of functional layers (36R, 36G, 36B) that are respectively provided at the positions of the plurality of first through-holes, one or more of the functional layers being wavelength conversion layers that convert light emitted from the light source into light of another color; and a heat conduction layer (38) that faces the first main surface with the partition layer and the plurality of functional layers interposed therebetween, has light transmissivity at the positions of the plurality of first through holes, and has a higher heat conductivity than the plurality of functional layers.

Description

Technical Field

[0001] This invention relates to display devices. Background Technology

[0002] In display devices, light-emitting elements such as light-emitting diodes are used, for example, as a light source for a backlight unit, or as constituent elements of pixels or subpixels (see Patent Documents 1 and 2).

[0003] Existing technical documents Patent documents Patent Document 1: Japanese Patent Application Publication No. 2000-131683 Patent Document 2: Japanese Patent Application Publication No. 2009-244383 Summary of the Invention

[0004] The purpose of this invention is to provide a display device with excellent heat dissipation.

[0005] According to one aspect of the present invention, a wavelength conversion substrate is provided, comprising: a transparent substrate having a first main surface and a second main surface; a partition layer disposed on the first main surface having a plurality of first through holes arranged along intersecting first and second directions; a plurality of functional layers disposed at the locations of the plurality of first through holes, wherein one or more functional layers are wavelength conversion layers that convert light emitted from a light source into light of other colors; and a thermally conductive layer sandwiching the partition layer and the plurality of functional layers in between and facing the first main surface, having light transmittance at the locations of the plurality of first through holes, and having a higher thermal conductivity than the plurality of functional layers.

[0006] According to another aspect of the present invention, a wavelength conversion substrate according to the above aspects is provided, wherein the thermally conductive layer has one or more openings, the one or more openings being configured such that the first orthogonal projection of the openings of the plurality of first through holes on the opposite side of the transparent substrate toward the first main surface at least partially overlaps with the second orthogonal projection of the one or more openings toward the first main surface.

[0007] According to another aspect of the present invention, a wavelength conversion substrate according to the above aspect is provided, wherein the overlap between the first orthographic projection and the second orthographic projection is smaller than that of the first orthographic projection.

[0008] According to another aspect of the present invention, a wavelength conversion substrate according to the above aspect is provided, wherein the area of ​​the overlapping portion accounts for less than 50% of the area of ​​the first orthographic projection.

[0009] According to another aspect of the present invention, a wavelength conversion substrate according to the above aspect is provided, wherein the thermally conductive layer has a plurality of second through holes at the locations of the plurality of first through holes.

[0010] According to another aspect of the present invention, a wavelength conversion substrate according to the above aspect is provided, wherein the thermally conductive layer has a plurality of second through holes arranged along the first direction and the second direction, the plurality of second through holes being configured to respectively span two or more of the plurality of first through holes.

[0011] According to another aspect of the present invention, a wavelength conversion substrate according to the above aspects is provided, wherein the thermally conductive layer comprises one or more strip portions.

[0012] According to another aspect of the invention, a wavelength conversion substrate according to the above aspects is provided, wherein the thermally conductive layer comprises a layer made of metal or alloy.

[0013] According to another aspect of the present invention, a wavelength conversion substrate according to the above aspects is provided, wherein the thermally conductive layer is composed of a transparent oxide layer.

[0014] According to another aspect of the present invention, a wavelength conversion substrate according to the above-described aspect is provided, wherein the thermally conductive layer is made of a material with a thermal conductivity of 15 W / m·K or higher.

[0015] According to another aspect of the present invention, a wavelength conversion substrate according to the above aspects is provided, wherein the thermally conductive layer has a thickness in the range of 100 to 5000 nm.

[0016] According to another aspect of the present invention, a wavelength conversion substrate according to the above aspects is provided, wherein the partition layer has a thickness in the range of 10 to 40 μm.

[0017] According to another aspect of the present invention, a wavelength conversion substrate according to the above aspects is provided, wherein an outer coating layer is further provided between the plurality of functional layers and the thermally conductive layer.

[0018] According to another aspect of the present invention, a wavelength conversion substrate according to the above aspects is provided, wherein the outer coating is further disposed between the partition layer and the thermally conductive layer.

[0019] According to another aspect of the present invention, a display device is provided, comprising: a wavelength conversion substrate as described in any of the above aspects; a dimming device configured to face the first main surface; and an adhesive layer disposed between the wavelength conversion substrate and the dimming device and bonding them together.

[0020] According to another aspect of the present invention, a display device according to the above aspects is provided, wherein it further comprises: a heat sink located outside the laminate of the wavelength conversion substrate, the dimming device and the adhesive layer; and a heat conductor that guides heat from the heat conductor layer to the heat sink.

[0021] According to another aspect of the present invention, in the display device according to the above aspect, the heat sink includes a back heat sink configured to sandwich the dimming device and the adhesive layer in the middle and opposite to the wavelength conversion substrate.

[0022] According to another aspect of the present invention, in the display device according to the above aspect, the rear heat sink is a rear heat dissipation layer disposed on the dimming device.

[0023] According to another aspect of the present invention, in the display device according to the above aspect, at least a portion of the heat conductor is disposed on the exterior of the laminate.

[0024] According to another aspect of the invention, in the display device according to the above aspect, the heat conductor at least partially covers the end face of the laminate.

[0025] According to another aspect of the present invention, in the display device described above, the dimming device is provided with one or more through holes, and the heat conductor is at least partially located within the one or more through holes.

[0026] According to another aspect of the present invention, in the display device according to the above aspect, the dimming device comprises a plurality of light-emitting elements.

[0027] According to another aspect of the present invention, in the display device according to the above aspect, the dimming device comprises a plurality of light-emitting diodes.

[0028] According to the present invention, a display device with excellent heat dissipation is provided. Attached Figure Description

[0029] Figure 1 This is a top view showing a portion of the display device according to the first embodiment of the present invention.

[0030] Figure 2 yes Figure 1 The equivalent circuit diagram of the display device is shown.

[0031] Figure 3 It is along Figure 1 The cross-sectional view of the display device shown along line III-III.

[0032] Figure 4 It is along Figure 1 The cross-sectional view of the display device shown along line IV-IV.

[0033] Figure 5 It means Figure 1 A top view of a portion of the wavelength conversion substrate included in the display device.

[0034] Figure 6This is a cross-sectional view showing a portion of the display device according to the second embodiment of the present invention.

[0035] Figure 7 This is a top view showing a portion of the wavelength conversion substrate included in the display device of the first modified example.

[0036] Figure 8 This is a top view showing a portion of the wavelength conversion substrate included in the display device of the second variation. Detailed Implementation

[0037] Hereinafter, embodiments of the present invention will be described with reference to the accompanying drawings. The embodiments described below will further embellish any of the aspects described above. The items described below may be individually or in combination with other items and incorporated into the above aspects.

[0038] Furthermore, the embodiments shown below illustrate structures for embodying the technical concept of the present invention. The technical concept of the present invention is not limited by the material, shape, or construction of the structural components described below. Various modifications can be made within the technical scope defined by the claims as stated in the claims.

[0039] Furthermore, for elements with the same or similar functions, the same reference numerals will be used in the accompanying drawings, and repeated descriptions will be omitted. Additionally, the drawings are schematic, and the relationship between dimensions in one direction and other directions, or the relationship between the dimensions of one component and other components, may differ from reality.

[0040] <1> First Implementation Method Figure 1 This is a top view showing a portion of the display device according to the first embodiment of the present invention. Figure 2 yes Figure 1 The equivalent circuit diagram of the display device is shown. Figure 3 It is along Figure 1 The cross-sectional view of the display device shown along line III-III. Figure 4 It is along Figure 1 The cross-sectional view of the display device shown along line IV-IV. Figure 5 It means Figure 1 A top view of a portion of the wavelength conversion substrate included in the display device. Furthermore, in Figure 1 In the following description, the area enclosed by the dashed line represents the opening on the transparent substrate 31 side of the third through hole of the black matrix 32.

[0041] Figures 1 to 4 The display device 1A shown is capable of color display using an active matrix driving method and is a miniature LED display in which each sub-pixel contains a light-emitting diode (LED).

[0042] Furthermore, in each figure, the X and Y directions are parallel to and intersect each other relative to the display surface of the display device 1A. In one example, the X and Y directions are perpendicular to each other. Additionally, the Z direction is perpendicular to both the X and Y directions. That is, the Z direction is the thickness direction of the display device 1A.

[0043] like Figure 2 As shown, the display device 1A includes an image signal line VSL, a power supply line PSL, a scan signal line SSL, a pixel PX, an image signal line driver VDR, and a scan signal line driver SDR.

[0044] The image signal line VSL and power line PSL extend along the Y direction and are arranged alternately along the X direction. The scan signal lines SSL extend along the X direction and are arranged along the Y direction.

[0045] Pixels PX are arranged along the X and Y directions. Each pixel PX includes a first sub-pixel PXR, a second sub-pixel PXG, and a third sub-pixel PXB. The first sub-pixel PXR, the second sub-pixel PXG, and the third sub-pixel PXB are arranged corresponding to the intersection of the image signal line VSL and the scan signal line SSL.

[0046] The first sub-pixel PXR, the second sub-pixel PXG, and the third sub-pixel PXB emit light of different colors. Here, as an example, the first sub-pixel PXR, the second sub-pixel PXG, and the third sub-pixel PXB emit red light, green light, and blue light, respectively.

[0047] In each pixel PX, the first sub-pixel PXR, the second sub-pixel PXG, and the third sub-pixel PXB are arranged sequentially along the X direction. The order of the first sub-pixel PXR, the second sub-pixel PXG, and the third sub-pixel PXB in each pixel PX can be changed.

[0048] Furthermore, here, the first sub-pixel PXR, the second sub-pixel PXG, and the third sub-pixel PXB form a stripe arrangement. The first sub-pixel PXR, the second sub-pixel PXG, and the third sub-pixel PXB can also form other arrangements such as a triangular arrangement or a mosaic arrangement.

[0049] The first sub-pixel PXR, the second sub-pixel PXG, and the third sub-pixel PXB each contain a light-emitting element D, a driving control element DR, a switch SW, and a capacitor C.

[0050] The light-emitting element D is a light-emitting diode (LED). An LED can be, for example, a light-emitting diode made of inorganic materials. An inorganic LED is obtained, for example, by monolithically dividing a laminate having the same layered structure into multiple parts. The light-emitting element D can also be a light-emitting diode made of organic materials, i.e., an electroluminescent element. The cathode of the light-emitting element D is connected to a ground electrode. Here, as an example, the light-emitting element D is made of inorganic materials and is a blue LED that emits blue light.

[0051] The drive control element DR and the switch SW are field-effect transistors. Here, the drive control element DR is a p-channel thin-film transistor, and the switch SW is an n-channel thin-film transistor. The gate of the drive control element DR is connected to the drain of the switch SW, the source is connected to the power supply line PSL, and the drain is connected to the anode of the light-emitting element D. The gate of the switch SW is connected to the scan signal line SSL, and the source is connected to the image signal line VSL.

[0052] Capacitor C is, for example, a film capacitor. One electrode of capacitor C is connected to the gate of the drive control element DR, and the other electrode is connected to the power supply line PSL.

[0053] The first sub-pixel PXR also includes Figure 3 and Figure 4 The first wavelength conversion layer 36R and the first coloring layer 33R are shown.

[0054] The first wavelength conversion layer 36R is positioned opposite the light-emitting element D of the first sub-pixel PXR. The first wavelength conversion layer 36R converts the light emitted by the light-emitting element D of the first sub-pixel PXR into a first light of a specific color. For example, the first wavelength conversion layer 36R converts the blue light emitted by the light-emitting element D of the first sub-pixel PXR into red light.

[0055] The first coloring layer 33R is configured to sandwich the first wavelength conversion layer 36R in between and face the light-emitting element D of the first sub-pixel PXR. The first coloring layer 33R allows light whose wavelength has been converted by the first wavelength conversion layer 36R to pass through, and absorbs light whose wavelength has not been converted by the first wavelength conversion layer 36R. The first coloring layer 33R is, for example, a red coloring layer that allows red light whose wavelength has been converted by the first wavelength conversion layer 36R to pass through and absorbs blue light, etc., whose wavelength has not been converted by the first wavelength conversion layer 36R.

[0056] The second sub-pixel PXG also includes Figure 3 The second wavelength conversion layer 36G and the second coloring layer 33G are shown.

[0057] The second wavelength conversion layer 36G is positioned opposite the light-emitting element D of the second sub-pixel PXG. The second wavelength conversion layer 36G converts the light emitted by the light-emitting element D of the second sub-pixel PXG into a second light of a different color than the first light. For example, the second wavelength conversion layer 36G converts the blue light emitted by the light-emitting element D of the second sub-pixel PXG into green light.

[0058] The second coloring layer 33G is configured to sandwich the second wavelength conversion layer 36G in between and face the light-emitting element D of the second sub-pixel PXG. The second coloring layer 33G transmits light whose wavelength has been converted by the second wavelength conversion layer 36G and absorbs light whose wavelength has not been converted by the second wavelength conversion layer 36G. For example, the second coloring layer 33G is a green coloring layer that transmits green light whose wavelength has been converted by the second wavelength conversion layer 36G and absorbs blue light, etc., whose wavelength has not been converted by the second wavelength conversion layer 36G.

[0059] The third sub-pixel PXB also includes Figure 3 The base layer 33B and the filler layer 36B are shown.

[0060] The fill layer 36B is positioned opposite the light-emitting element D of the third sub-pixel PXB. The fill layer 36B is, for example, a colorless and transparent layer. The fill layer 36B can be omitted.

[0061] The base layer 33B is configured to sandwich the fill layer 36B in between and face the light-emitting element D of the third sub-pixel PXB. The base layer 33B allows light emitted from the light-emitting element D of the third sub-pixel PXB to be transmitted as a third light source. The base layer 33B is, for example, a colorless light-transmitting layer or a blue-colored layer that allows blue light emitted from the light-emitting element D of the third sub-pixel PXB to be transmitted.

[0062] like Figure 2 As shown, the image signal line driver (VDR) and scan signal line driver (SDR) are mounted on the display panel using a COG (chip-on-glass) mounting method. The image signal line driver (VDR) and scan signal line driver (SDR) can also be mounted using a TCP (tape carrier package) instead of a COG mounting method.

[0063] The image signal line driver VDR is connected to the image signal line VSL and the power supply line PSL. The image signal line driver VDR outputs a voltage signal to the image signal line VSL as the image signal.

[0064] The scan signal line driver SDR is connected to the scan signal line SSL. The scan signal line driver SDR outputs a voltage signal to the scan signal line SSL as the scan signal. The power supply line PSL can be connected to the scan signal line driver SDR instead of the image signal line driver VDR.

[0065] The display device 1A will be described in more detail.

[0066] like Figure 3 and Figure 4 As shown, the display device 1A includes a dimming device 2, a wavelength conversion substrate 3A, an adhesive layer 4, a heat sink 5A, and a heat conductor composed of a main heat conductor 6A and an auxiliary heat conductor 7.

[0067] A dimming device is an apparatus that emits light toward a wavelength conversion substrate and is capable of adjusting at least one of the intensity of the light and the time of emitting the light for each pixel or each sub-pixel. Figure 3 and Figure 4 The dimming device 2 shown includes a substrate 21, a semiconductor layer 22, conductor layers 23A, 23B, 23C and 23D, insulating layers 24A, 24B and 24C, a light-emitting element 25, a partition layer 26, a filling layer 27 and a conductor layer 28.

[0068] The substrate 21 may include, for example, an insulating substrate such as a glass substrate. The substrate 21 may also include a base coating disposed on the main surface of the insulating substrate opposite to the wavelength conversion substrate 3A. The base coating may be, for example, a laminate of silicon nitride and silicon oxide layers sequentially stacked on the insulating substrate. The substrate 21 may also be a semiconductor substrate such as a silicon substrate. The substrate 21 may be rigid or flexible.

[0069] Semiconductor layers 22 are arranged on the main surface of substrate 21 opposite to wavelength conversion substrate 3A. Semiconductor layers 22 are, for example, polysilicon layers. Semiconductor layers 22 are semiconductor layers that constitute thin-film transistors that drive control elements DR or switches SW. Each semiconductor layer 22 includes a source, a drain, and a channel region between them.

[0070] Conductor layer 23A is a conductor pattern disposed on the aforementioned main surface of substrate 21. Conductor layer 23A constitutes the lower electrode (not shown) of image signal line VSL, power line PSL, source electrode SE, drain electrode DE, and capacitor C. Source electrode SE and drain electrode DE are connected to the source and drain electrodes of semiconductor layer 22, respectively. Conductor layer 23A is made of metal or alloy. Conductor layer 23A can have a single-layer structure or a multi-layer structure.

[0071] The insulating layer 24A covers the main surface of the conductor layer 23A and the substrate 21. The insulating layer 24A can be formed, for example, using TEOS (tetraethyl orthosilicate). The gate insulating film of each thin-film transistor constituting the drive control element DR or switch SW is part of the insulating layer 24A. Additionally, the dielectric layer of each capacitor C is another part of the insulating layer 24A.

[0072] Conductor layer 23B is a conductor pattern disposed on insulating layer 24A. The gate electrode GE of each thin-film transistor constituting the drive control element DR or switch SW is part of conductor layer 23B. Each gate electrode GE sandwiches insulating layer 24A in the middle and faces the channel region of semiconductor layer 22. Additionally, the upper electrode (not shown) of each capacitor C is another part of conductor layer 23B. Each upper electrode sandwiches insulating layer 24A in the middle and faces the lower electrode of capacitor C containing the upper electrode. Conductor layer 23B is made of metal or alloy. Conductor layer 23B can have a single-layer structure or a multi-layer structure.

[0073] Insulating layer 24B covers conductor layer 23B and insulating layer 24A. Insulating layer 24B is an interlayer insulating film. Insulating layer 24B is, for example, composed of an inorganic insulator such as silicon oxide. Insulating layers composed of inorganic insulators can be formed, for example, by plasma CVD (chemical vapor deposition).

[0074] like Figure 4 As shown, conductor layer 23C is a conductor pattern disposed on insulating layer 24B. Conductor layer 23C constitutes the scan signal line SSL. The source electrode SE and drain electrode DE can also be disposed on insulating layer 24B instead of insulating layer 24A. That is, the scan signal line SSL, source electrode SE, and drain electrode DE can also be constituted by conductor layer 23C.

[0075] Insulating layer 24C covers conductor layer 23C and insulating layer 24B. Insulating layer 24C is a passivation film. Insulating layer 24C is composed of, for example, an inorganic insulator such as silicon nitride.

[0076] Conductor layer 23D is a conductor pattern disposed on insulating layer 24C. Conductor layer 23D forms electrode pads arranged along the X and Y directions corresponding to the first sub-pixel PXR, the second sub-pixel PXG, and the third sub-pixel PXB. In the stack formed by insulating layers 24A, 24B, and 24C, a through-hole is provided at the location of the drain electrode DE connected to the drain of the drive control element DR. Each electrode pad is connected to the drain electrode DE through the through-hole. Conductor layer 23D is made of, for example, metal or alloy. Conductor layer 23D can have a single-layer structure or a multi-layer structure.

[0077] The outline of the orthographic projection of each electrode pad on a plane perpendicular to the Z direction is separated from and surrounds the orthographic projection of the light-emitting element 25 disposed on the electrode pad on the same plane. That is, the electrode pad has a larger dimension in the direction perpendicular to the Z direction compared to the light-emitting element 25. Therefore, the electrode pad also functions as a reflective layer for reflecting light traveling toward the substrate 21. The electrode pad may not function as a reflective layer. In this case, the reflective layer that performs this function may be disposed separately from the electrode pad, or it may not be disposed at all.

[0078] Figure 3 and Figure 4 The light-emitting element 25 shown is Figure 2 The light-emitting element D is shown. The light-emitting element 25 is disposed on the electrode pad.

[0079] Here, the light-emitting element 25 is a light-emitting diode made of inorganic material. In addition, the substrate containing the light-emitting diode as the light-emitting element 25 is sometimes also called an "LED substrate".

[0080] The light-emitting element 25 has a multilayer structure comprising multiple layers, such as a first layer 251, a second layer 252, and a third layer 253. Here, the stacking direction of the layers comprising the light-emitting element 25 is the Z-direction. This stacking direction may also be perpendicular to the Z-direction.

[0081] Each light-emitting element 25 includes an anode and a cathode. The light-emitting element 25 has an anode and a cathode on one side. The anode of the light-emitting element 25 is connected to an electrode pad via a bonding wire (not shown). When the light-emitting element 25 has an anode on one side and a cathode on the other side, the bonding of the light-emitting element 25 to the electrode pads and the connection of the anode to the electrode pads can also be performed using chip bonding with a conductive material such as a conductive paste as the bonding material. When the light-emitting element 25 has an anode and a cathode on one side, the conductor layer 28 can be omitted, and electrode pads for connection to the cathode of the light-emitting element 25 can be further provided on the insulating layer 24C. Wiring connecting these electrode pads can be further provided between the insulating layers, and the bonding of the light-emitting element 25 to the electrode pads and the conductor layer 28, as well as the connection of the anode and cathode to the electrode pads, can be performed by flip-chip bonding.

[0082] The dimensions of the light-emitting element 25 in the X and Y directions are preferably in the range of 1 to 100 μm, more preferably in the range of 5 to 80 μm, and even more preferably in the range of 10 to 60 μm. The dimensions of the light-emitting element 25 in the Z direction are preferably in the range of 1 to 20 μm, more preferably in the range of 1 to 15 μm, and even more preferably in the range of 1 to 10 μm.

[0083] A partition layer 26 is disposed on the insulating layer 24C. The partition layer 26 has through-holes at the locations of the electrode pads. Light-emitting elements 25 are respectively located within these through-holes. The partition layer 26 is, for example, made of resin. Such a partition layer 26 can be formed by photolithography using photosensitive resin. The partition layer 26 may also include a resin layer with through-holes and a reflective layer covering the sidewalls of these through-holes and the upper surface of any resin layer. The reflective layer can have a single-layer structure or a multi-layer structure. The layers included in the reflective layer are, for example, metals, alloys, or transparent dielectrics. The partition layer 26 can be omitted.

[0084] The filler layer 27 fills the gap between the light-emitting element 25 and the spacer layer 26. The filler layer 27 is a light-transmitting layer that allows light emitted from the light-emitting element 25 to pass through. Additionally, the filler layer 27 also serves as a protective layer for the light-emitting element 25 and its junction with the electrodes. The filler layer 27 is, for example, made of resin. Preferably, the refractive index of the filler layer 27 is different from the refractive index of the material constituting the surface of the spacer layer 26.

[0085] A conductor layer 28 is disposed on the partition layer 26 and the fill layer 27. The cathode of the light-emitting element 25 is connected to the conductor layer 28. When the conductor layer 28 is made of a conductive transparent oxide, it can be configured to cover the entire cathode of the light-emitting element 25. When the conductor layer 28 is made of metal or alloy, it is preferable to partially cover the cathode of the light-emitting element 25.

[0086] The wavelength conversion substrate 3A is opposite to the dimming device 2. Specifically, the wavelength conversion substrate 3A is opposite to the substrate 21 with the light-emitting element 25 and the like in between.

[0087] The wavelength conversion substrate 3A includes a transparent substrate 31, a black matrix 32, a partition layer 34, a color filter containing a first color layer 33R and a second color layer 33G, a base layer 33B, a first wavelength conversion layer 36R, a second wavelength conversion layer 36G, a fill layer 36B, an outer coating layer 37, and a thermally conductive layer 38. The first wavelength conversion layer 36R, the second wavelength conversion layer 36G, and the fill layer 36B are functional layers.

[0088] The transparent substrate 31 is transmissive to visible light. The transparent substrate 31 is, for example, a colorless substrate. The transparent substrate 31 can have a single-layer structure or a multi-layer structure. The transparent substrate 31 is, for example, made of glass, transparent resin, or a combination thereof. The transparent substrate 31 can be rigid or flexible. The transparent substrate 31 has a first main surface opposite to the dimming device 2 and a second main surface as its back surface.

[0089] A black matrix 32 is disposed on the first main surface of the transparent substrate 31. The black matrix 32 is a black layer that blocks visible light. The black matrix 32 can be omitted.

[0090] The black matrix 32 is, for example, composed of a mixture containing a binder resin and a colorant. The colorant is, for example, a black pigment, or a mixture of pigments that produce black through subtractive color mixing, such as a mixture containing blue, green, and red pigments.

[0091] The black matrix 32 has a third through hole at the location of the light-emitting element 25. The opening on the transparent substrate 31 side of each third through hole is larger in the direction perpendicular to the Z direction compared to the light-emitting element 25.

[0092] Here, as Figure 1 As shown by the dashed line, the opening on the transparent substrate 31 side of the third through-hole has a shape extending along the Y direction. Each portion of the black matrix 32 corresponding to pixel PX includes a third through-hole located at the position of the first sub-pixel PXR, a third through-hole located at the position of the second sub-pixel PXG, and a third through-hole located at the position of the third sub-pixel PXB. These three third through-holes are arranged along the X direction. Multiple groups of third through-holes, each composed of these three third through-holes, are arranged along both the X and Y directions. The distance between adjacent groups of third through-holes in the X direction is greater than the distance between the third through-holes contained within the same group. Similarly, the distance between adjacent groups of third through-holes in the Y direction is greater than the distance between the third through-holes contained within the same group.

[0093] The aperture ratio of the black matrix 32 is preferably in the range of 5 to 66%, more preferably in the range of 5 to 40%, and even more preferably in the range of 5 to 20%. Light-emitting diodes made of inorganic materials can emit light brightly even with a small light-emitting surface and have a long lifespan. Therefore, when the light-emitting element 25 is a light-emitting diode made of inorganic materials, a bright display can be achieved even by reducing the aperture ratio of the black matrix 32. Moreover, reducing the aperture ratio of the black matrix 32 can suppress the reflection of external light, enabling the display of a deeper black, and thus achieving a higher contrast ratio.

[0094] The thickness of the black matrix 32 is preferably in the range of 1 to 30 μm, more preferably in the range of 1 to 15 μm, and even more preferably in the range of 1 to 5 μm. A thicker black matrix 32 is advantageous for achieving high light-blocking properties. However, if the black matrix 32 is thickened, during pattern exposure of the coating film composed of the photosensitive black composition, light may not be able to reach the depth of the coating film with sufficient intensity, potentially preventing the achievement of high shape accuracy.

[0095] like Figure 3 and Figure 4As shown, a partition layer 34 is disposed on the black matrix 32. According to one example, the partition layer 34 is a resin layer. This resin layer is, for example, transparent. In this case, the resin layer can be colored or colorless. The resin layer can also have light-scattering properties. According to one example, the resin layer is composed of a composite material in which metal oxide particles or carbon particles are dispersed in the resin, and is a light-shielding layer with an optical density (OD value) of 3 or less relative to all light in the wavelength range of 400-700 nm.

[0096] The partition layer 34 has first through holes at the locations of the third through holes. These first through holes constitute a first through hole group corresponding to the aforementioned third through hole group. Here, each first through hole group consists of three first through holes arranged along the X direction. The first through hole groups are arranged along intersecting first and second directions, which are in this case, the X and Y directions.

[0097] like Figure 5 As shown, the distance W between adjacent first through-hole groups in the X direction x 1 is the distance W between the first through holes contained in the same through hole group. x 2. The distance W between adjacent first through-hole groups in the Y direction. y 1 is also the distance W between the first through holes contained in the same through hole group. x 2.

[0098] Distance W x 2. Preferably, the micrometer is in the range of 5 to 80 μm, more preferably in the range of 5 to 40 μm, and even more preferably in the range of 5 to 20 μm.

[0099] Distance W x 1. Preferably, the micrometer is in the range of 5 to 250 μm, more preferably in the range of 50 to 250 μm, and even more preferably in the range of 100 to 250 μm.

[0100] Distance W y 1. Preferably, the micrometer is in the range of 5 to 250 μm, more preferably in the range of 5 to 100 μm, and even more preferably in the range of 5 to 50 μm.

[0101] Distance W x 1 and distance W x 2 to W x 1 / W x 2. Preferably, the value is in the range of 0.1 to 50; more preferably, in the range of 2 to 20; and even more preferably, in the range of 5 to 15. Distance W x 1 can be related to distance W x 2 are equal, or less than the distance W. x 2.

[0102] Distance W y1 and distance W x 2 to W y 1 / W x 2. Preferably, the value is in the range of 0.1 to 50; more preferably, in the range of 0.1 to 10; and even more preferably, in the range of 0.1 to 5. Distance W y 1 can be related to distance W x 2 are equal, or less than the distance W. x 2.

[0103] Here, the first through-hole is configured such that the outline of the orthographic projection of the opening on the transparent substrate 31 side onto the first main surface (hereinafter referred to as the first outline) surrounds the outline of the orthographic projection of the third through-hole onto the first main surface (hereinafter referred to as the second outline). The first outline may also not surround the second outline. In the configuration where the first outline surrounds the second outline, the stray light has a smaller impact on the display compared to the configuration where the first outline does not surround the second outline.

[0104] The portion of the partition layer 34 sandwiched between adjacent first through holes, i.e., the partition portion, has a conical cross-sectional shape. The partition portion may have a rectangular cross-sectional shape, an inverted conical cross-sectional shape, or other cross-sectional shapes.

[0105] The thickness of the partition layer 34 is preferably in the range of 5 to 50 μm, more preferably in the range of 5 to 40 μm, even more preferably in the range of 10 to 40 μm, and most preferably in the range of 10 to 25 μm. When the thickness of the partition layer 34 is small, it is difficult to increase the total thickness of the layers formed within the first through-hole. If the partition layer 34 is thickened, the shape accuracy of the partition portion sandwiched between adjacent first through-holes decreases.

[0106] The partition layer 34 can have a single-layer structure or a multi-layer structure. According to one example, the partition layer 34 with a multi-layer structure includes: a resin layer having the shape described above with respect to the partition layer 34; and a reflective layer covering the sidewalls of the through holes disposed in the resin layer.

[0107] The reflective layer can completely or partially cover the sidewalls of the through-holes in the resin layer. The reflective layer can also further cover the upper surface of the resin layer. The reflective layer can cover the entire upper surface of the resin layer or partially cover the upper surface of the resin layer. The reflective layer can also further cover the upper surfaces of the first coloring layer 33R, the second coloring layer 33G, and the base layer 33B, respectively. The reflective layer can cover the entire upper surface of the first coloring layer 33R, the second coloring layer 33G, and the base layer 33B, respectively, or partially cover that upper surface.

[0108] The reflective layer can have a single-layer or multi-layer structure. The layers contained in the reflective layer are, for example, made of metal, alloy or transparent dielectric.

[0109] like Figure 3 and Figure 4 As shown, the first color layer 33R fills the third through-hole at the location of the first sub-pixel PXR. As mentioned above, here, the first color layer 33R is a red color layer.

[0110] like Figure 3 As shown, the second color layer 33G fills the third through-hole at the location of the second sub-pixel PXG. As mentioned above, here, the second color layer 33G is a green color layer.

[0111] like Figure 3 As shown, the base layer 33B fills the third through-hole at the location of the third sub-pixel PXB. As mentioned above, this is a colorless light-transmitting layer or a blue-colored layer.

[0112] A first wavelength conversion layer 36R is disposed on the first coloring layer 33R, filling at least the bottom of the second recess. The first wavelength conversion layer 36R is a layer containing a phosphor such as a quantum dot phosphor and a transparent resin. As described above, here, the first wavelength conversion layer 36R converts the blue light emitted by the light-emitting element D of the first sub-pixel PXR into red light.

[0113] A second wavelength conversion layer 36G is disposed on the second coloring layer 33G, filling at least the bottom of the second recess. The second wavelength conversion layer 36G is a layer containing a phosphor such as a quantum dot phosphor and a transparent resin. As described above, here, the second wavelength conversion layer 36G converts the blue light emitted by the light-emitting element D of the second sub-pixel PXG into green light.

[0114] A filler layer 36B is disposed on the base layer 33B, filling at least the bottom of the second recess. As described above, the filler layer 36B is a colorless and transparent layer. In this case, the filler layer 36B is, for example, made of transparent resin.

[0115] The outer coating 37 is located between the functional layer and the thermally conductive layer 38. The outer coating 37 is also located between the partition layer 34 and the thermally conductive layer 38. Furthermore, as described above, the functional layer comprises a first wavelength conversion layer 36R, a second wavelength conversion layer 36G, and a filler layer 36B.

[0116] The outer coating 37 is a colorless and transparent layer. The outer coating 37 may be composed, for example, of a cured resin. The outer coating 37 can be omitted.

[0117] The outer coating 37 serves as a planarization layer. Furthermore, the outer coating 37 makes it difficult for heat to be conducted from the thermally conductive layer 38 to the functional layer. The thickness of the portion of the outer coating 37 covering the functional layer is preferably 1 μm or more, more preferably 3 μm or more.

[0118] The thickness of the portion of the outer coating 37 that covers the functional layer is preferably W.x 2 / 2 or less, preferably W x Less than 2 / 3. If the outer coating 37 is thickened, the wavelength conversion substrate 3A becomes thicker, and therefore, the display device 1A also becomes thicker. In addition, color mixing may occur due to the guided waves to adjacent pixels.

[0119] The portion of the outer coating 37 further between the partition layer 34 and the thermally conductive layer 38 may also be omitted. However, when the outer coating 37 includes this portion, it makes it difficult for heat conduction from the thermally conductive layer 38 to the partition layer 34 to occur, and therefore, it makes it difficult for heat conduction from the thermally conductive layer 38 to the functional layer via the partition layer 34 to occur. The thickness of the portion of the outer coating 37 further between the partition layer 34 and the thermally conductive layer 38 is preferably 1 μm or more, more preferably 3 μm or more.

[0120] The thermally conductive layer 38 sandwiches the partition layer 34 and the functional layer in between, and faces the first main surface of the transparent substrate 31. Here, the thermally conductive layer 38 is disposed on the outer coating layer 37.

[0121] In this display device 1A, the light-emitting element 25 is the main heat source. As described later, a portion of the heat generated in the light-emitting element 25 is directed to the heat sink 5A via the heat-conducting layer 38 and the heat conductor.

[0122] The thermally conductive layer 38 is transparent at the location of the first through-hole in the partition layer 34. Therefore, the thermally conductive layer 38 allows light emitted from the light-emitting element 25 to enter the functional layer.

[0123] Here, the thermally conductive layer 38 has more than one opening. More specifically, as... Figure 5 As shown, the heat-conducting layer 38 has a second through hole at the position of the first through hole in the partition layer 34.

[0124] In addition, Figure 5 In the diagram, a rectangle with an outline formed by single-dot dashed lines represents the opening on the opposite side of the first through-hole from the transparent substrate 31, corresponding to the first orthographic projection of that opening onto the first main surface. Additionally, in... Figure 5 In the diagram, the rectangle formed by solid lines represents the opening provided in the heat-conducting layer 38, which here represents the second through hole, equivalent to the second orthographic projection of the aforementioned opening onto the first main surface. The first orthographic projection at least partially overlaps with the second orthographic projection.

[0125] Here, the outline of the first orthographic projection surrounds the second orthographic projection. Therefore, the overlap between the first and second orthographic projections is smaller than that of the first orthographic projection. The area of ​​this overlap is preferably 50% or less, more preferably 10% or less, of the area of ​​the first orthographic projection. Reducing this proportion makes it difficult for heat conduction from the light-emitting element 25 to the functional layer to occur.

[0126] The area of ​​the aforementioned overlapping portion occupies a proportion of 1% or more, more preferably 5% or more, in the area of ​​the first orthographic projection. If the heat-conducting layer 38 has light-shielding properties at a position other than its opening, reducing the aforementioned proportion may increase the proportion of light that is blocked by the heat-conducting layer 38 and does not incident on the functional layer in the light emitted by the light-emitting element 25.

[0127] The thermally conductive layer 38 has a higher thermal conductivity than the functional layer. Preferably, the thermally conductive layer 38 has a higher thermal conductivity than the outer coating layer 37.

[0128] The heat-conducting layer 38 is preferably made of a material with a thermal conductivity of 15 W / m·K or higher, and more preferably of a material with a thermal conductivity of 150 W / m·K or higher. The thermal conductivity of the material constituting the heat-conducting layer 38 is, for example, 450 W / m·K or lower.

[0129] The thermally conductive layer 38 can have a single-layer structure or a multi-layer structure. The layers included in the thermally conductive layer 38 are, for example, composed of metals, alloys, or transparent oxides. From the viewpoint of thermal conductivity, the thermally conductive layer 38 preferably includes layers composed of metals or alloys. Metals include, for example, titanium, chromium, aluminum, copper, or silver. Alloys include, for example, aluminum alloys such as aluminum-neodymium alloys. Transparent oxides include, for example, inorganic oxides such as silicon oxide, aluminum oxide, and titanium oxide. Here, as an example, the thermally conductive layer 38 includes layers composed of metals or alloys.

[0130] The thickness of the thermally conductive layer 38 is preferably in the range of 100 to 5000 nm, and more preferably in the range of 100 to 1000 nm. Increasing the thickness of the thermally conductive layer 38 improves the thermal conductivity in the in-plane direction. However, increasing the thickness of the thermally conductive layer 38 increases the manufacturing cost.

[0131] The thermally conductive layer 38 can be formed, for example, by sequentially performing vapor deposition methods such as sputtering and vacuum evaporation, forming an etching mask, and etching such as wet etching. The etching mask can be formed by photolithography using a photosensitive resin. The transparent resin layer used as the etching mask can be removed after the above etching, or it can remain in place.

[0132] An adhesive layer 4 is placed between the dimming device 2 and the wavelength conversion substrate 3A, bonding them together. The adhesive layer 4 allows light emitted from the light-emitting element 25 to pass through. The adhesive layer 4 is, for example, a colorless and transparent layer. The adhesive layer 4 is composed of an adhesive or binder.

[0133] The heat sink 5A is located outside the laminate of the dimming device 2, the wavelength conversion substrate 3A, and the adhesive layer 4. Here, the heat sink 5A is configured as a back heat sink that sandwiches the dimming device 2 and the adhesive layer 4 in the middle and faces the wavelength conversion substrate 3A. More specifically, the heat sink 5A is a back heat dissipation layer provided on the dimming device 2.

[0134] The heat sink 5A is made of a material with high thermal conductivity. Examples of such materials include metals such as copper, aluminum, iron, silver, titanium, molybdenum, tantalum, tungsten, and niobium; alloys containing one or more of these metals; carbides such as tungsten carbide; carbon materials such as graphite, graphene, carbon nanotubes, and diamond; other insulating ceramics; or composites containing one or more of these materials. The heat sink 5A can have a single-layer or multi-layer structure.

[0135] The surface of the heat sink 5A is flat. The flat-surfaced heat sink 5A can be formed, for example, by forming a film on the dimming device 2. Alternatively, the flat-surfaced heat sink 5A can be attached to the dimming device 2. The flat-surfaced heat sink 5A facilitates the formation of the heat sink 5A or its placement on the dimming device 2.

[0136] The surface of the heat sink 5A can also be uneven. For example, the heat sink 5A can also have multiple fins or pins on its surface. Such a heat sink 5A has a large surface area and excellent heat dissipation.

[0137] The apparent area S of heat sink 5A RB The area S of the back of the dimming device 2 B The ratio of S RB / S B Preferably, it is 0.5 or higher, more preferably 0.8 or higher. Compared to S RB / S B The larger the size, the better the heat dissipation. Additionally, compared to S... RB / S B The upper limit, for example, is 1. Compared to S... RB / S B It can be greater than 1.

[0138] The minimum thickness of the heat sink 5A is preferably 100 μm or more, more preferably 1000 μm or more. Increasing the minimum thickness of the heat sink 5A increases its heat capacity and decreases its thermal resistance. While there is no upper limit to the minimum thickness of the heat sink 5A, increasing its minimum thickness makes the display device 1A thicker. From this perspective, the minimum thickness of the heat sink 5A is preferably 5 mm or less.

[0139] A heat conductor is at least partially disposed on the exterior of the aforementioned laminate. The heat conductor guides heat from the heat-conducting layer 38 to the heat sink 5A. Here, the heat conductor at least partially covers the end face of the aforementioned laminate. Thus, the heat conductor contacts the heat-conducting layer 38 and the heat sink 5A at the end face of the aforementioned laminate. Preferably, the heat conductor contacts the heat-conducting layer 38 and the heat sink 5A substantially throughout the perimeter of the aforementioned laminate.

[0140] As described above, the heat conductor here consists of a primary heat conductor 6A and an auxiliary heat conductor 7.

[0141] The dominant heating element 6A is disposed on the exterior of the aforementioned laminate. Here, the dominant heating element 6A at least partially covers the end face of the aforementioned laminate. According to one example, the dominant heating element 6A is made of a highly thermally conductive material and is a component mounted on the end face of the aforementioned laminate. According to another example, the dominant heating element 6A is made of a highly thermally conductive material and is a layer formed on the end face of the aforementioned laminate.

[0142] An auxiliary heat conductor 7 is disposed on the heat-conducting layer 38 at the periphery of the wavelength conversion substrate 3A. In one example, the auxiliary heat conductor 7 is made of a highly thermally conductive material and is a component disposed on the heat-conducting layer 38 at the periphery of the wavelength conversion substrate 3A. In another example, the auxiliary heat conductor 7 is made of a highly thermally conductive material and is a layer formed on the heat-conducting layer 38 at the periphery of the wavelength conversion substrate 3A. Here, the auxiliary heat conductor 7 is in contact with both the heat-conducting layer 38 and the main heat conductor 6A. Thus, the auxiliary heat conductor 7 assists in heat conduction from the heat-conducting layer 38 to the main heat conductor 6A. The auxiliary heat conductor 7 can be omitted.

[0143] As described above, the primary heat sink 6A and the auxiliary heat conductor 7 are made of a material with high thermal conductivity. For example, the material exemplified for the heat sink 5A can be used as the material with high thermal conductivity. The primary heat sink 6A and the auxiliary heat conductor 7 can each have a single-layer structure or a multi-layer structure.

[0144] In this display device 1A, the light-emitting element 25 is the main heat source. A portion of the heat generated in the light-emitting element 25 is guided to the heat sink 5A disposed on the outside of the aforementioned laminate via the heat-conducting layer 38 and the heat conductor. Therefore, the display device 1A is less prone to heat accumulation inside the aforementioned laminate, exhibiting excellent heat dissipation.

[0145] Because of its excellent heat dissipation, the display device 1A is less prone to degradation, brightness reduction, and color deviation, as explained below.

[0146] In recent years, the applications of display devices have expanded, and to improve outdoor visual visibility, there is a need for display devices with increased output and higher brightness. However, if high output is achieved in display devices using light-emitting diodes (LEDs), the heat generated by the LEDs can sometimes cause thermal degradation of components such as wiring and sealing resin located nearby. Furthermore, phosphors such as quantum dots experience thermal degradation, and brightness decreases and color deviations (a shift in the wavelength at which maximum intensity is observed in the visible region; hereinafter referred to as wavelength shift) when emitting light at high temperatures. In particular, in display devices that include LEDs and have a structure in which a pair of substrates are bonded together via an adhesive layer, heat is easily accumulated internally because the LEDs, as heat sources, are isolated from the atmosphere. Therefore, in high-brightness display devices that use phosphors such as quantum dots to convert the short-wavelength light (blue or ultraviolet light) emitted by the LEDs into blue, green, and red light for full-color display, excellent heat dissipation is required.

[0147] As described above, in the display device 1A, a portion of the heat generated in the light-emitting element 25 is guided to the heat sink 5A disposed outside the laminate via the heat-conducting layer 38 and the heat conductor. Therefore, in the display device 1A, heat is less likely to accumulate inside the laminate, and the internal temperature is less likely to become excessively high. Consequently, the display device 1A is less prone to degradation of quantum dots, reduced brightness, and color deviation (wavelength shift).

[0148] Furthermore, in the display device 1A, since the heat sink 5A is located on the back, it does not obstruct the display. Therefore, the heat sink 5A can be constructed in various ways.

[0149] <2> Second Implementation Method Figure 6 This is a cross-sectional view showing a portion of the display device according to the second embodiment of the present invention.

[0150] Figure 6 The display device 1B shown is the same as the display device 1A described above, except that it adopts the following structure. That is, the display device 1B includes a dimming device 2B that is substantially the same as the dimming device 2, except that it has one or more through holes extending along the Z direction, replacing the dimming device 2. Furthermore, in the display device 1B, a heat conductor is disposed inside the laminate of the dimming device 2B, the wavelength conversion substrate 3A, and the adhesive layer 4, and instead of the main heat conductor 6A and the auxiliary heat conductor 7, it includes a main heat conductor 29 and an auxiliary heat conductor 6. Additionally, the heat sink 5 is the same as the heat sink 5A described above.

[0151] The primary heat source 29 is made of a highly thermally conductive material that fills the through-holes provided in the dimming device 2B. The primary heat source 29 may also have its sidewalls covered with a highly thermally conductive material covering the through-holes in the dimming device 2B. The primary heat source 29 promotes heat conduction from the thermally conductive layer 38 to the heat sink 5A.

[0152] An auxiliary heat conductor 6 is disposed between the main heat conductor 29 and the heat-conducting layer 38. The auxiliary heat conductor 6 is made of a material with high thermal conductivity. The auxiliary heat conductor 6 promotes heat conduction from the heat-conducting layer 38 to the main heat conductor 29. The auxiliary heat conductor 6 can be omitted.

[0153] As described above, the primary heat sink 29 and the secondary heat conductor 6 are made of a material with high thermal conductivity. For example, the material exemplified for the heat sink 5A can be used as the material with high thermal conductivity. The primary heat sink 29 and the secondary heat conductor 6 can each have a single-layer structure or a multi-layer structure.

[0154] Like display device 1A, display device 1B also has excellent heat dissipation.

[0155] <3> Variations As illustrated below, the aforementioned display device and wavelength conversion substrate can be modified in various ways.

[0156] Figure 7 This is a top view showing a portion of the wavelength conversion substrate included in the display device of the first modified example.

[0157] The display device of the first modification includes, in addition to, Figure 7 Except for replacing the wavelength conversion substrate 3A, the wavelength conversion substrate 3B shown is the same as the display device 1A. Furthermore, the wavelength conversion substrate 3B is the same as the wavelength conversion substrate 3A except for the following structure.

[0158] That is, in the wavelength conversion substrate 3B, the thermally conductive layer 38 has a plurality of second through holes arranged along the X and Y directions, and these second through holes are configured to span two or more first through holes respectively. Here, the second through holes are configured to span three first through holes arranged along the X direction respectively.

[0159] The display device that includes a wavelength conversion substrate 3B instead of a wavelength conversion substrate 3A also has excellent heat dissipation, just like the display device 1A.

[0160] Furthermore, compared to the structure of wavelength conversion substrate 3A, the structure of wavelength conversion substrate 3B may have a smaller effect on hindering heat conduction to the functional layer. However, when the relative positions of the wavelength conversion substrate and the dimming device 2 are offset along the X direction, the positional offset of wavelength conversion substrate 3B has a smaller impact on the display compared to the structure of wavelength conversion substrate 3A.

[0161] Figure 8 This is a top view showing a portion of the wavelength conversion substrate included in the display device of the second variation.

[0162] The display device of the second modification includes, in addition to, Figure 8 Except for replacing the wavelength conversion substrate 3A, the wavelength conversion substrate 3C shown is the same as the display device 1A. Furthermore, the wavelength conversion substrate 3C is the same as the wavelength conversion substrate 3A except that it adopts the following structure.

[0163] That is, in the wavelength conversion substrate 3C, the thermally conductive layer 38 includes one or more strip-shaped portions. Here, the thermally conductive layer 38 includes a plurality of strip-shaped portions that extend along the Y direction and are arranged along the X direction while meandering. Each strip-shaped portion is opposite to three columns that are each formed by a first through-hole arranged along the Y direction and arranged along the X direction.

[0164] The display device that includes a wavelength conversion substrate 3C instead of a wavelength conversion substrate 3A also has excellent heat dissipation, just like the display device 1A.

[0165] Furthermore, compared to the structure of the wavelength conversion substrate 3A, the structure of the wavelength conversion substrate 3C may have a smaller effect on hindering heat conduction to the functional layer. However, regarding the wavelength conversion substrate 3B, the thermally conductive layer 38 can be formed not only by the method described above using vapor deposition, but also by methods such as printing conductive paste.

[0166] The aforementioned display device and wavelength conversion substrate can also be modified in other ways.

[0167] For example, wavelength conversion substrates 3B and 3C can also be used in display device 1B.

[0168] The heat-conducting layer 38 may also have other shapes such as a grid or stripes. The heat-conducting layer 38 may also be composed of multiple parts arranged and separated from each other along the X and Y directions. Considering heat dissipation, it is preferable that all parts constituting the heat-conducting layer 38 are in contact with the heat conductor.

[0169] The thermally conductive layer 38 can also be a transparent oxide layer. In this case, the thermally conductive layer 38 can also be a full-coverage film without openings.

[0170] In the aforementioned display device, a front heat sink may be provided instead of a heat sink 5A serving as a rear heat sink. The front heat sink may be, for example, a front heat dissipation layer provided on the second main surface of the transparent substrate 31. The front heat sink has an opening at the location of the third through-hole provided in the black matrix 32.

[0171] The front heat sink is made of a material with high thermal conductivity. For example, the material exemplified for heat sink 5A can be used as the material with high thermal conductivity. The front heat sink can have a single-layer structure or a multi-layer structure.

[0172] The front heat sink preferably has a black surface. A black-surfaced front heat sink may contain one or more of the following: chromium, copper oxynitride, carbon nanotubes, graphite, and graphene. A black-surfaced front heat sink can perform the same function as the black matrix 32.

[0173] Thus, the display device with a front heat sink instead of a rear heat sink also has excellent heat dissipation, just like the display device 1A.

[0174] In the aforementioned display device, both a rear heat sink and a front heat sink can be provided. In this case, exceptionally good heat dissipation can be achieved.

[0175] The aforementioned display device may also omit a heat sink. In this case, the heat conductor can also be omitted. Without a heat sink, the same high heat dissipation performance as with a heat sink cannot be achieved. However, even without a heat sink, the heat-conducting layer 38 still hinders heat conduction to the functional layer and promotes heat conduction from the center of the display to the periphery. Therefore, even without a heat sink, excellent heat dissipation can be achieved without one.

[0176] The circuitry installed in dimming devices, etc., can employ the same... Figure 2 Different structures.

[0177] For example, the image signal line driver VDR can supply a current signal as an image signal to the image signal line VSL. In this case, the first sub-pixel PXR, the second sub-pixel PXG, and the third sub-pixel PXB can each be configured such that, during the writing of the image signal, the gate-source voltage of the drive control element DR is set to a value corresponding to the current signal, and during the light emission period, a drive current of the magnitude corresponding to the gate-source voltage flows to the light-emitting element D. Furthermore, in the dimming device 2, instead of using a circuit for displaying images via an active matrix drive, a circuit for displaying images via a passive matrix drive can be used.

[0178] As the light-emitting element 25, an ultraviolet light-emitting diode can be used instead of a blue light-emitting diode. In this case, the filling layer 36B is a wavelength conversion layer that converts the light emitted by the light-emitting element 25 of the third sub-pixel PXB into a third light with a color different from the first and second light. For example, the first wavelength conversion layer 36R, the second wavelength conversion layer 36G, and the filling layer 36B convert the ultraviolet light emitted by the light-emitting element 25 into red light, green light, and blue light, respectively.

[0179] The aforementioned display device is capable of displaying color images, but it can also display monochrome images. For example, in display device 1A, the first sub-pixel PXR and the second sub-pixel PXG are omitted, a blue light-emitting diode is used as the light-emitting element 25, and the filling layer 36B is set as a wavelength conversion layer that converts blue light into yellow light. When the filling layer 36B converts a portion of the blue light incident upon it into yellow light and allows the remaining portion to be transmitted, white can be displayed through additive color mixing of blue and yellow.

[0180] The wavelength conversion substrate may also include an outer coating layer between the black matrix 32 and the partition layer 34. The outer coating layer may include one or more of a transparent resin, an ultraviolet absorber, a yellow pigment, and transparent particles. When the stray light incident on the partition layer 34 is ultraviolet light, the outer coating layer containing the ultraviolet absorber can absorb the stray light.

[0181] It can also be a display device other than a micro-LED display, such as an organic electroluminescent display device. However, the display device preferably includes a light-emitting element.

[0182] Explanation of reference numerals in the attached figures 1A…Display device; 1B…Display device; 2…Dimming device; 2B…Dimming device; 3A…Wavelength conversion substrate; 3B…Wavelength conversion substrate; 3C…Wavelength conversion substrate; 4…Adhesive layer; 5…Heat sink; 5A…Heat sink; 6…Auxiliary heat conductor; 6A…Main heat conductor; 7…Auxiliary heat conductor; 21…Substrate; 22…Semiconductor layer; 23A…Conductor layer; 23B…Conductor layer; 23C…Conductor layer; 23D…Conductor layer; 24A…Insulating layer; 24B…Insulating layer; 24C…Insulating layer; 25…Light-emitting element; 26…Partition layer; 27…Fill layer; 28…Conductor layer; 29…Main heat conductor; 31…Transparent substrate; 32…Black matrix; 33B…Base layer; 33 G…Second color layer; 33R…First color layer; 34…Secondary layer; 36B…Fill layer; 36G…Second wavelength conversion layer; 36R…First wavelength conversion layer; 37…Outer coating layer; 38…Thermal conductive layer; 251…First layer; 252…Second layer; 253…Third layer; C…Capacitor; D…Light-emitting element; DE…Drain electrode; DR…Driver control element; GE…Gate electrode; PSL…Power line; PX…Pixel; PXB…Third sub-pixel; PXG…Second sub-pixel; PXR…First sub-pixel; SDR…Scan signal line driver; SE…Source electrode; SSL…Scan signal line; SW…Switch; VDR…Image signal line driver; VSL…Image signal line; W x 1…distance; W x 2…distance; W y 1…distance.

Claims

1. A wavelength conversion substrate, comprising: A transparent substrate having a first main surface and a second main surface; A partition layer is disposed on the first main surface and has a plurality of first through holes arranged along intersecting first and second directions; Multiple functional layers are respectively disposed at the positions of the multiple first through holes, wherein one or more functional layers are wavelength conversion layers that convert light emitted from the light source into light of other colors; as well as The thermally conductive layer sandwiches the partition layer and the plurality of functional layers in the middle and faces the first main surface. It is translucent at the locations of the plurality of first through holes and has a higher thermal conductivity compared to the plurality of functional layers.

2. The wavelength conversion substrate according to claim 1, wherein, The thermally conductive layer has one or more openings, wherein the one or more openings are configured such that the first orth projection of the openings on the opposite side of the plurality of first through holes toward the first main surface and the second orth projection of the one or more openings toward the first main surface at least partially overlap.

3. The wavelength conversion substrate according to claim 2, wherein, The overlap between the first orthographic projection and the second orthographic projection is smaller than that between the first orthographic projection and the second orthographic projection.

4. The wavelength conversion substrate according to claim 3, wherein, The area of ​​the overlapping portion accounts for less than 50% of the area of ​​the first orthographic projection.

5. The wavelength conversion substrate according to any one of claims 1 to 4, wherein, The thermally conductive layer has multiple second through holes at the locations of the multiple first through holes.

6. The wavelength conversion substrate according to any one of claims 1 to 4, wherein, The thermally conductive layer has a plurality of second through holes arranged along the first direction and the second direction, wherein the plurality of second through holes are configured to span two or more of the plurality of first through holes respectively.

7. The wavelength conversion substrate according to any one of claims 1 to 4, wherein, The thermally conductive layer comprises one or more strip-shaped portions.

8. The wavelength conversion substrate according to any one of claims 1 to 7, wherein, The thermally conductive layer comprises a layer made of metal or alloy.

9. The wavelength conversion substrate according to any one of claims 1 to 7, wherein, The thermally conductive layer is composed of a transparent oxide layer.

10. The wavelength conversion substrate according to any one of claims 1 to 9, wherein, The thermally conductive layer is made of a material with a thermal conductivity of 15 W / m·K or higher.

11. The wavelength conversion substrate according to any one of claims 1 to 10, wherein, The thermally conductive layer has a thickness in the range of 100~5000nm.

12. The wavelength conversion substrate according to any one of claims 1 to 11, wherein, The partition layer has a thickness in the range of 10 to 40 μm.

13. The wavelength conversion substrate according to any one of claims 1 to 12, wherein, It also has an outer coating layer located between the plurality of functional layers and the thermally conductive layer.

14. The wavelength conversion substrate according to claim 13, wherein, The outer coating is also located between the partition layer and the thermally conductive layer.

15. A display device comprising: Wavelength conversion substrate as described in any one of claims 1 to 14; The dimming device is configured to face the first main surface; and An adhesive layer is placed between the wavelength conversion substrate and the dimming device to bond them together.

16. The display device according to claim 15, wherein, It also has: A heat sink is located outside the laminate of the wavelength conversion substrate, the dimming device, and the adhesive layer; and A heat conductor that directs heat from the heat-conducting layer to the heat sink.

17. The display device according to claim 16, wherein, The heat sink includes a back heat sink configured to sandwich the dimming device and the adhesive layer in the middle and to face the wavelength conversion substrate.

18. The display device according to claim 17, wherein, The back heat sink is a back heat dissipation layer disposed on the dimming device.

19. The display device according to any one of claims 16 to 18, wherein, At least a portion of the heat conductor is disposed on the exterior of the laminate.

20. The display device according to claim 19, wherein, The heat conductor at least partially covers the end face of the laminate.

21. The display device according to any one of claims 16 to 19, wherein, The dimming device is provided with one or more through holes, and the heat conductor is located at least partially within one or more through holes.

22. The display device according to any one of claims 15 to 21, wherein, The dimming device includes multiple light-emitting elements.

23. The display device according to any one of claims 15 to 21, wherein, The dimming device includes multiple light-emitting diodes.

Images