Nanoparticles, methods and compositions for preparing the same, composites and devices

Abstract

Nanoparticles, methods and compositions for making the same, composites, and devices are provided. The nanoparticles include semiconductor nanocrystals comprising zinc, indium, and selenium. In the semiconductor nanocrystal, the molar ratio of indium to selenium (In: Se) is greater than or equal to about 0.1: 1 and less than or equal to about 0.5: 1. The nanoparticle does not include cadmium, and the nanoparticle is configured to emit a first light. A peak emission wavelength of the first light is greater than or equal to about 480 nanometers and less than or equal to about 700 nanometers.

Description

[0001] This application is based on and claims priority to Korean Patent Application No. 10-2024-0156446, filed on November 6, 2024, with the Korean Intellectual Property Office, the entire contents of which are incorporated herein by reference. Technical Field

[0002] Semiconductor nanoparticles, methods for manufacturing semiconductor nanoparticles, compositions comprising semiconductor nanoparticles and liquid carriers, semiconductor nanoparticle composites comprising a matrix and a plurality of nanoparticles dispersed in the matrix, display devices comprising semiconductor nanoparticles, and electronic devices comprising semiconductor nanoparticles are disclosed. Background Technology

[0003] Semiconductor nanoparticles can exhibit different aspects, properties, or characteristics compared to their bulk counterparts with essentially the same composition. For example, semiconductor nanoparticles can possess different physical properties (e.g., band gap energy, luminescence properties, etc.) based on their nanostructures. Semiconductor nanoparticles can be configured to emit light when excited by incident light or an applied voltage. Luminescent nanostructures can find applicability in a variety of devices (e.g., display panels or electronic devices including display panels). From an environmental perspective, the development of luminescent nanoparticles that do not contain harmful heavy metals (such as cadmium) and still achieve comparable or improved one or more luminescent or optical properties is of interest and desirable. Summary of the Invention

[0004] One aspect relates to a particle comprising semiconductor nanocrystals (hereinafter also referred to as nanoparticles or semiconductor nanoparticles), which is configured to emit light of a desired wavelength.

[0005] One aspect relates to a method for manufacturing semiconductor nanoparticles or a population of semiconductor nanoparticles.

[0006] One aspect relates to a composition comprising semiconductor nanoparticles or groups of semiconductor nanoparticles (e.g., an ink composition).

[0007] One aspect relates to a semiconductor nanoparticle composite, which comprises semiconductor nanoparticles or a group of semiconductor nanoparticles.

[0008] One aspect relates to a color conversion panel or display device comprising semiconductor nanoparticles or a group of semiconductor nanoparticles.

[0009] One aspect relates to an electronic device that includes semiconductor nanoparticles or a group of semiconductor nanoparticles (e.g., semiconductor nanoparticles or a group of semiconductor nanoparticles are included in the color conversion panel of an electronic device or display device).

[0010] In an embodiment, a nanoparticle includes a semiconductor nanocrystal comprising zinc, indium, and selenium, wherein the molar ratio of indium to selenium in the semiconductor nanocrystal is greater than or equal to about 0.1:1 and less than or equal to about 0.5:1, the nanoparticle does not include cadmium, and the nanoparticle is configured to emit a first light, wherein the peak emission wavelength of the first light is greater than or equal to about 480 nanometers (nm) and less than or equal to about 700 nm.

[0011] Semiconductor nanocrystals may include group 12-13-16 compounds comprising zinc, indium, and selenium (or composed of zinc, indium, and selenium).

[0012] Semiconductor nanocrystals may not include silver, copper, or a combination thereof.

[0013] Semiconductor nanocrystals may not include manganese, cobalt, or combinations thereof.

[0014] Semiconductor nanocrystals can have a tetragonal structure.

[0015] In semiconductor nanocrystals or nanoparticles, the molar ratio of indium to selenium (In:Se) may be greater than or equal to about 0.13:1 or greater than or equal to about 0.2:1.

[0016] In semiconductor nanocrystals or nanoparticles, the molar ratio of indium to selenium (In:Se) may be less than or equal to about 0.43:1, or less than or equal to about 0.4:1.

[0017] In semiconductor nanocrystals, the molar ratio of indium to selenium (In:Se) can be greater than or equal to about 0.13:1 and less than or equal to about 0.43:1.

[0018] In the semiconductor nanocrystals or nanoparticles, the molar ratio of indium to the sum of zinc and indium (In:(Zn+In)) may be greater than or equal to about 0.02:1, or greater than or equal to about 0.09:1 and less than or equal to about 0.8:1, or less than or equal to about 0.75:1.

[0019] In semiconductor nanocrystals, the molar ratio of indium to zinc and the sum of indium (In:(Zn+In)) can be greater than or equal to about 0.02:1 and less than or equal to about 0.8:1.

[0020] In semiconductor nanocrystals or nanoparticles, the molar ratio of indium to the sum of zinc and indium (In:(Zn+In)) may be greater than or equal to about 0.1:1 or greater than or equal to about 0.25:1.

[0021] In the semiconductor nanocrystals or nanoparticles, the molar ratio of indium to the sum of zinc and indium (In:(Zn+In)) may be less than or equal to about 0.7:1, less than or equal to about 0.65:1, or less than or equal to about 0.55:1.

[0022] In the semiconductor nanocrystals or nanoparticles, the molar ratio of zinc to selenium (Zn:Se) may be greater than or equal to about 0.35:1, greater than or equal to about 0.4:1, or greater than or equal to about 0.42:1 and less than or equal to about 1.34:1, less than or equal to about 1.2:1, or less than or equal to about 1.1:1.

[0023] In semiconductor nanocrystals or nanoparticles, the charge balance value obtained by the following formula may be greater than or equal to about 0.8, greater than or equal to about 0.9, or greater than or equal to about 1.3 and less than or equal to about 1.8, less than or equal to about 1.4, less than or equal to about 1.25, or less than or equal to about 1.08:

[0024] Charge balance value = {2[Zn] + 3[In]} / (2[Se])

[0025] Wherein, [Zn], [In] and [Se] are the molar amounts of zinc, indium and selenium in the semiconductor nanocrystal or the nanoparticles, respectively.

[0026] The first emission can be trap emission. The emission peak of trap emission can have a full width at half maximum (FWHM) greater than or equal to about 70 nm, greater than or equal to about 90 nm, or greater than or equal to about 100 nm. The emission peak of trap emission can have a full width at half maximum (FWHM) less than or equal to about 180 nm, less than or equal to about 150 nm, or less than or equal to about 120 nm.

[0027] For example, the first light may have an FWHM greater than or equal to about 90 nm and less than or equal to about 200 nm, and the peak emission wavelength of the first light may be greater than or equal to about 500 nm and less than or equal to about 680 nm.

[0028] The first light or trap emission may have a peak emission wavelength greater than or equal to about 500 nm, greater than or equal to about 550 nm, greater than or equal to about 580 nm, greater than or equal to about 590 nm, or greater than or equal to about 600 nm. The first light or trap emission may have a peak emission wavelength less than or equal to about 680 nm, less than or equal to about 650 nm, or less than or equal to about 645 nm.

[0029] The nanoparticles may exhibit a first absorption peak in the ultraviolet-visible (UV-Vis) absorption spectrum. Alternatively, the nanoparticles may not exhibit a first absorption peak in the UV-Vis absorption spectrum.

[0030] In the UV-Vis absorption spectrum, the wavelength of the first absorption peak of the nanoparticles may be greater than or equal to about 380 nm, greater than or equal to about 390 nm, greater than or equal to about 400 nm, or greater than or equal to about 430 nm. The wavelength of the first absorption peak of the nanoparticles may be less than or equal to about 550 nm, less than or equal to about 500 nm, or less than or equal to about 490 nm.

[0031] In the UV-Vis absorption spectrum, the nanoparticles may exhibit absorption edges at approximately 540 nm, approximately 500 nm, or approximately 490 nm. Absorption edges may also appear at approximately 380 nm, approximately 390 nm, or approximately 400 nm.

[0032] In the UV-Vis absorption spectrum, the nanoparticles may have an absorption edge in the range of about 380 nm and about 540 nm.

[0033] In the UV-Vis absorption spectrum, the nanoparticles may have a first absorption peak wavelength greater than or equal to about 380 nm and less than or equal to about 500 nm.

[0034] The nanoparticles may have a cone (e.g., tetrahedral) shape.

[0035] The nanoparticles may have a particle size greater than or equal to about 2 nm, greater than or equal to about 3 nm, greater than or equal to about 4 nm, or greater than or equal to about 5 nm. The nanoparticles may have a particle size less than or equal to about 50 nm, less than or equal to about 40 nm, or less than or equal to about 30 nm.

[0036] In one embodiment, a method for manufacturing nanoparticles or semiconductor nanocrystals includes contacting (or mixing) an indium precursor, a selenium precursor, and a zinc precursor in an organic solvent in the presence of an organic ligand at a reaction temperature. The reaction temperature is greater than or equal to about 230°C and less than or equal to about 380°C.

[0037] In an embodiment, the method may include: preparing a reaction solution comprising an indium precursor, a selenium precursor, and an organic ligand in an organic solvent; heating the reaction solution to a reaction temperature; and adding a zinc precursor to the reaction solution.

[0038] Before heating to the reaction temperature, the reaction solution can be pretreated by heating under vacuum at a temperature greater than or equal to about 50°C and less than or equal to about 180°C. When the temperature of the reaction solution is greater than or equal to about 200°C and less than or equal to the reaction temperature, the zinc precursor can be added to the reaction solution.

[0039] Organic solvents may include primary amine compounds of C5 to C40. Based on the total volume of the organic solvent, the amount of primary amine compounds in the organic solvent may be greater than or equal to about 30% and less than or equal to about 100%. Organic solvents may also include or may not include hydrocarbon solvents of C5 to C30, tertiary amine compounds of C5 to C40, or combinations thereof.

[0040] The reaction temperature can be greater than or equal to about 280°C and less than or equal to about 320°C.

[0041] The reaction solution may not include dodecyl mercaptan.

[0042] Zinc precursors may include zinc carboxylate, zinc alkylate, or combinations thereof.

[0043] Organic ligands may include RCOOH, RNH2, R2NH, R3N, RSH, RH2PO, R2HPO, R3PO, RH2P, R2HP, R3P, ROH, RCOOR', RPO(OH)2, RHPOOH, R2POOH, or combinations thereof, and R and R' are each independently substituted or unsubstituted C1 to C40 (or C3 to C24) aliphatic hydrocarbons (e.g., alkyl, alkenyl, or alkynyl) or substituted or unsubstituted C6 to C40 (or C6 to C24) aromatic hydrocarbons (e.g., C6 to C20 aryl).

[0044] In one embodiment, an ink composition comprises nanoparticles.

[0045] In an embodiment, an ink composition may further include a liquid carrier. The nanoparticles may be dispersed within the liquid carrier. The liquid carrier may include polymerizable (or liquid) monomers, organic solvents, or combinations thereof. The ink composition may be substantially free of volatile organic solvents. The ink composition may also include metal oxide nanoparticles.

[0046] An embodiment provides a color conversion layer or color conversion structure (hereinafter referred to as a color conversion layer) comprising color conversion regions containing nanoparticles. In an embodiment, a color conversion panel may include a color conversion layer comprising color conversion regions and optionally partitions (e.g., black matrices, embankments, or pixel-defining layers) defining each region of the color conversion layer. The color conversion regions include a first region corresponding to a first pixel, the first region comprising a first composite configured to emit first light, and the first composite may include a matrix and semiconductor nanoparticles dispersed in the matrix.

[0047] The embodiments relate to a display device (or display panel) comprising a light source and nanoparticles (or a composite comprising nanoparticles, a color conversion layer, or a color conversion panel). In the embodiments, the display panel may include a light-emitting panel (or light source), a color conversion panel, and optionally a light-transmitting layer located between the light-emitting panel and the color conversion panel.

[0048] In an embodiment, the display device includes a color conversion panel or a display panel.

[0049] The light-emitting panel (or light source) can be configured to provide incident light to the color conversion layer (or color conversion panel). The incident light may include blue light and optionally green light. The blue light may have a peak wavelength in the range of 440 nm to 460 nm or in the range of 450 nm to 455 nm.

[0050] The light source may include organic light-emitting diodes, micro LEDs, mini LEDs, nanorod-based LEDs, or combinations thereof.

[0051] In one embodiment, an electronic device includes a first electrode and a second electrode spaced apart from each other, and an active layer disposed between the first electrode and the second electrode, the active layer comprising nanoparticles. A charge-assisted layer (e.g., a hole-assisted layer) may be located between the first electrode and the active layer.

[0052] In an embodiment, the display device may include a display device for use with augmented reality / virtual reality devices, portable terminal devices, monitors, laptop personal computers (PCs), televisions, electronic display panels, cameras, or electronic components of vehicles.

[0053] The nanoparticles in the embodiments can be environmentally friendly and emit light at a desired wavelength. Attached Figure Description

[0054] The above and other aspects, features and advantages of some exemplary embodiments will become clearer from the following detailed description taken in conjunction with the accompanying drawings.

[0055] Figure 1 This is a flowchart illustrating the patterning process (photolithography) of the ink composition used in the embodiment.

[0056] Figure 2 This is a flowchart illustrating a patterning process (inkjet printing) of the ink composition used in an embodiment.

[0057] Figure 3A This is a schematic cross-sectional view of the color conversion panel according to an embodiment.

[0058] Figure 3B This is a cross-sectional view of an electronic device (or display device) including a color conversion panel according to an embodiment.

[0059] Figure 4A This is a perspective view showing a display panel including a color conversion panel according to an embodiment.

[0060] Figure 4B This is an exploded view of a display device according to an embodiment.

[0061] Figure 4C yes Figure 4A A cross-sectional view of the display panel.

[0062] Figure 4D This is an exploded view of the display panel according to an embodiment.

[0063] Figure 5A It is shown Figure 4A A plan view of the pixel arrangement of the display panel.

[0064] Figure 5B , Figure 5C , Figure 5D and Figure 5E These are cross-sectional views of the light-emitting devices according to embodiments.

[0065] Figure 6 yes Figure 5A A sectional view of the display panel taken along line IV-IV.

[0066] Figure 7 This is a schematic cross-sectional view of a display device (e.g., a liquid crystal display device) according to an embodiment.

[0067] Figure 8A A schematic cross-sectional view of an electronic device according to an embodiment is shown.

[0068] Figure 8B A schematic cross-sectional view of an electronic device according to an embodiment is shown.

[0069] Figure 8C A schematic cross-sectional view of an electronic device according to an embodiment is shown.

[0070] Figure 9A The photoluminescence spectra of the nanoparticles synthesized in Preparation Example 2 (In 10%), Preparation Example 3 (In 15%), and Comparative Example 1 (In 0%) are shown.

[0071] Figure 9B The photoluminescence spectra of the nanoparticles synthesized in Preparation Example 4 (In 17%), Preparation Example 5 (In 20%), and Preparation Example 6 (In 23%) are shown.

[0072] Figure 10A and Figure 10B The UV-Vis absorption spectra of the nanoparticles synthesized in Preparation Examples 1 to 3 and Comparative Example 1 are shown.

[0073] Figure 11A A transmission electron microscope image of the nanoparticles synthesized in Preparation Example 1 (In 5%) is shown.

[0074] Figure 11B A transmission electron microscope image of the nanoparticles synthesized in Preparation Example 2 (In 10%) is shown. Detailed Implementation

[0075] The advantages and features of the techniques described below, as well as methods of implementing them, will become clear from the exemplary embodiments described in further detail below in conjunction with the accompanying drawings. However, the embodiments should not be construed as limiting oneself to the exemplary embodiments set forth herein. Unless otherwise defined, all terms used herein (including technical and scientific terms) are as commonly understood by one of ordinary skill in the art. Terms defined in general dictionaries should not be interpreted ideally or exaggeratedly unless clearly defined.

[0076] Furthermore, unless explicitly stated otherwise, the word “including” and its variations such as “contains” or “comprising” will be understood to imply inclusion of the stated element but not exclusion of any other element.

[0077] In the accompanying drawings, the thickness of layers, films, panels, areas, etc., is exaggerated for clarity. Throughout the specification, the same reference numerals denote the same elements.

[0078] What will be understood is that when an element such as a layer, film, region, or substrate is referred to as being "on" another element, it may be directly on the other element, or there may be intermediate elements present. Conversely, when an element is referred to as being "directly on" another element, there are no intermediate elements present.

[0079] As used herein, unless the context clearly indicates otherwise, the singular forms “a,” “an,” and “the” are intended to include the plural forms containing “at least one.” For example, the term “semiconductor nanoparticle” may refer to a single semiconductor nanoparticle or multiple semiconductor nanoparticles. “At least one” should not be construed as limited to “a” or “an.” “Or” means “and / or.” As used herein, the term “and / or” includes any and all combinations of one or more of the associated listed items.

[0080] Exemplary embodiments are described herein with reference to cross-sectional views, which are schematic illustrations of idealized embodiments. Thus, variations in the shape of the illustrations will be anticipated due to factors such as manufacturing techniques and / or tolerances. Therefore, the embodiments described herein should not be construed as limited to the specific shapes of the areas shown herein, but will include shape deviations, for example, due to manufacturing processes. For example, areas shown or described as flat may generally have rough and / or non-linear characteristics. Furthermore, sharp corners (acute angles) shown may be rounded (rounded). Therefore, the areas shown in the figures are schematic in nature, and their shapes are not intended to show the precise shapes of the areas, nor are they intended to limit the scope of the present claims.

[0081] As used herein, “about” or “approximately” includes stated values ​​and means within an acceptable range of deviation from a particular value, as determined by a person skilled in the art taking into account the measurement in question and the errors associated with the measurement of the particular quantity (i.e., the limitations of the measurement system). For example, “about” may mean within one or more standard deviations, or within ±10%, ±5%, or ±3% of the stated value.

[0082] As used herein, the expression "excluding cadmium (or other hazardous heavy metals)" may mean that the concentration of cadmium (or other hazardous heavy metals) is less than or equal to about 100 parts per million by weight (100 ppmw), less than or equal to about 50 ppmw, less than or equal to about 10 ppmw, less than or equal to about 1 ppmw, less than or equal to about 0.1 ppmw, less than or equal to about 0.01 ppmw, or about zero. In one or more embodiments, the amount of cadmium (or other hazardous heavy metals) may be substantially absent, or if present, the amount of cadmium (or other hazardous heavy metals) may be less than or equal to the detection limit of a given analytical tool or the same as an impurity level.

[0083] In the following text, as used herein, unless otherwise defined, “substituted” means that at least one hydrogen atom of a compound is replaced by a substituent selected from C1 to C30 alkyl, C2 to C30 alkenyl, C2 to C30 alkynyl, C6 to C30 aryl, C7 to C30 alkylaryl, C7 to C30 arylalkyl, C6 to C30 aryloxy, C6 to C30 arylthio, C1 to C30 alkoxy, C1 to C30 Alkylthio, C1 to C30 heteroalkyl, C3 to C30 heteroalkylaryl, C2 to C30 alkylheteroaryl, C2 to C30 heteroarylalkyl, C1 to C30 heteroaryloxy, C1 to C30 heteroarylthio, C3 to C30 cycloalkyl, C3 to C15 cycloalkenyl, C6 to C30 cycloalkynyl, C2 to C30 heterocycloalkyl, halogen (-F, -Cl, -Br or -I), hydroxyl (-OH), nitro (-NO2). Cyano (-CN), amino or amine (-NRR', where R and R' are each independently hydrogen or C1 to C6 alkyl), azide (-N3), amidine (-C(=NH)NH2), hydrazine (-NHNH2), hydrazone (=N(NH2)), aldehyde (-C(=O)H), carbamoyl (-C(O)NH2), thiol (-SH), ester (-C(=O)OR, where R is C1 to C6 alkyl or C6 to C12 aryl), carboxylic acid (-COOH) or a salt thereof (-C(=O)OM, where M is an organic or inorganic cation), sulfonic acid (-SO3H) or a salt thereof (-SO3M, where M is an organic or inorganic cation), phosphate (-PO3H2) or a salt thereof (-PO3MH or -PO3M2, where M is an organic or inorganic cation), or combinations thereof. The specific number or range of carbon atoms in the group excludes any substituents.

[0084] In addition, unless otherwise defined below, “heterogeneous” means the presence of one to three heteroatoms (such as N, O, P, Si, S, Se, Ge, or B).

[0085] Furthermore, as used herein, the term "aliphatic hydrocarbon group" refers to a C1 to C30 straight-chain or branched alkyl, a C1 to C30 straight-chain or branched alkenyl, or a C1 to C30 straight-chain or branched alkynyl, and as used herein, the term "aromatic organic group" refers to a C6 to C30 aryl or a C2 to C30 heteroaryl.

[0086] As used herein, the term "(meth)acrylate" refers to acrylate (salt) and / or methacrylate (salt).

[0087] As used herein, the term "family" refers to a family of the periodic table.

[0088] As used herein, the terms "nanoparticle" and "nanostructure" refer to a structure having at least one region or characteristic size at the nanoscale. In one or more embodiments, the size of the nanoparticle or nanostructure may be less than about 500 nm, less than about 300 nm, less than about 250 nm, less than about 150 nm, less than about 100 nm, less than about 50 nm, or less than about 30 nm. The nanoparticle or nanostructure may have any shape, such as nanowires, nanorods, nanotubes, multi-arm shapes with two or more arms, nanodots, etc., but the embodiments are not limited thereto. The nanoparticle or nanostructure may be, for example, substantially crystalline, substantially single-crystal, polycrystalline, amorphous, or a combination thereof.

[0089] Quantum dots can be, for example, semiconductor nanocrystal particles that exhibit quantum confinement or exciton confinement effects, and are a type of luminescent nanostructure (e.g., a luminescent nanostructure capable of emitting light upon energy excitation). Here, unless otherwise explicitly defined, the shape of a “quantum dot” or nanoparticle is not limited.

[0090] As used herein, the term "dispersion" refers to a dispersion in which the dispersed phase is a solid and the continuous medium comprises a liquid or solid state different from the dispersed phase. It will be understood that a "dispersion" can be a colloidal dispersion in which the dispersed phase has a size greater than or equal to about 1 nm (e.g., greater than or equal to about 2 nm, greater than or equal to about 3 nm, or greater than or equal to about 4 nm) and less than or equal to a few micrometers (μm) (e.g., less than or equal to about 2 μm, less than or equal to about 1 μm, less than or equal to about 900 nm, less than or equal to about 800 nm, less than or equal to about 700 nm, less than or equal to about 600 nm, or less than or equal to about 500 nm).

[0091] Here, size (size, diameter, or thickness, etc.) can be a value for a single entity or an average value for multiple nanoparticles. As used herein, the term "average value" (e.g., the average size of a quantum dot) can be the mean or the median. In one or more embodiments, the average value can be the "mean" average.

[0092] As used herein, the term “maximum emission wavelength (or peak emission wavelength)” is the wavelength at which a given emission spectrum of light reaches its maximum (maximum value).

[0093] In one or more embodiments, the quantum efficiency can be easily and reproducibly determined using commercially available equipment (e.g., from Hitachi or Hamamatsu, etc.) and with reference to operating instructions provided by, for example, the respective equipment manufacturer. The quantum efficiency (which can be used interchangeably with the term "quantum yield" (QY)) can be measured in the soluble or solid state (i.e., in the complex). In one or more embodiments, the quantum efficiency (or quantum yield) is the ratio of photons emitted by a nanostructure or a group of nanostructures to the photons absorbed. In one or more embodiments, the quantum efficiency can be measured by any method. For example, there are two methods for measuring fluorescence quantum yield or efficiency: the absolute method and the relative method. The quantum efficiency measured by the absolute method can be referred to as the absolute quantum efficiency.

[0094] In the absolute method, quantum efficiency can be obtained by detecting the fluorescence of all samples via an integrating sphere. In the relative method, the quantum efficiency of the unknown sample can be calculated by comparing the fluorescence intensity of a standard dye (standard sample) with the fluorescence intensity of the unknown sample. Coumarin 153, coumarin 545, rhodamine 101 inner salt, anthracene, and rhodamine 6G can be used as standard dyes according to their photoluminescence (PL) wavelengths, but the examples are not limited thereto.

[0095] Full width at half maximum (FWHM) and peak emission wavelength (e.g., photoluminescence (PL) or electroluminescence (EL)) can be measured, for example, from the emission spectrum (e.g., photoluminescence spectrum or electroluminescence spectrum) obtained by a spectrophotometer (such as a fluorescence spectrophotometer, etc.).

[0096] As used herein, the term "first absorption peak wavelength" refers to the wavelength at which the main peak first appears in the lowest energy region of the ultraviolet-visible (UV-Vis) absorption spectrum.

[0097] Semiconductor nanoparticles can be used in various electronic devices, for example, in color conversion panels (or emitting color filters). Liquid crystal display devices may include a white emitting backlight unit and an absorptive color filter, and the backlight unit may include a quantum dot sheet. In display devices including quantum dot-based color conversion panels or emitting color filters, a quantum dot layer, as the emitting material, is disposed at the front of the device, and blue light (excitation light) provided by a light source is converted into green or red light through the quantum dot layer. In the color conversion panel, the color conversion of incident light can occur at the relatively front of the device, and a wide viewing angle can be achieved through omnidirectional scattering of light. Emitting color filters can reduce light loss. The color conversion panel can be an electronic device including a color conversion layer or a color conversion structure.

[0098] Optical sensors can be used in a variety of electronic devices, such as flexible touchscreens for optical communication, camera exposure meters, automatic flash units, photoelectric switches, barcode readers, image scanners, and medical analyzers. Nanoparticles such as quantum dots have potential applications as materials in optical sensors because they allow selection of the desired wavelength band of the light-receiving region. Optical sensors incorporating nanoparticles such as quantum dots can absorb and emit light of specific wavelengths and, for example, can exhibit relatively high emission efficiency and increased absorption coefficients, thus making them suitable for use in optoelectronic devices.

[0099] Many semiconductor nanoparticles (e.g., quantum dots) with practically applicable levels of luminescence properties are based on toxic heavy metals such as cadmium (Cd), lead (Pb), and / or mercury (Hg). Toxic heavy metals (such as cadmium) cause serious environmental and health problems and are elements regulated by the Restriction of Hazardous Substances (RoHS) directive in many countries. Therefore, it is desirable to develop environmentally friendly quantum dots that emit light at desired wavelengths while exhibiting enhanced optical properties (e.g., enhanced optical properties when applied to various electronic devices).

[0100] In embodiments, the nanoparticles may not include cadmium. The nanoparticles may not include mercury, lead, or combinations thereof. In embodiments, the nanoparticles (hereinafter referred to as semiconductor nanoparticles) comprise semiconductor nanocrystals containing zinc, indium, and selenium, wherein the molar ratio of indium to selenium in the semiconductor nanocrystals is greater than or equal to about 0.1:1 and less than or equal to about 0.5:1, the nanoparticles do not include cadmium, and the nanoparticles are configured to emit first light. The semiconductor nanocrystals may comprise group 12-13-16 compounds comprising zinc, indium, and selenium (or composed of zinc, indium, and selenium).

[0101] As a group 12-13-16 compound, indium zinc selenide can possess a direct bandgap energy of approximately 1.82 electron volts (eV). Indium zinc selenide can be synthesized in thin film or bulk crystalline form, but it is difficult to fabricate into semiconductor nanoparticles (e.g., quantum dots) with small particle sizes (e.g., monodisperse). Therefore, nanoparticles containing indium zinc selenide can exhibit optical properties through the addition of metals (e.g., by doping with additional metals such as copper, silver, or manganese). However, in the case of emission based on such doping, the emission can differ from emission based on the properties of indium zinc selenide itself.

[0102] The nanoparticles of the embodiments may exhibit emission properties based on indium zinc selenide itself by having the characteristics defined herein. Therefore, in the embodiments, the semiconductor nanocrystals or nanoparticles comprising semiconductor nanocrystals may not include silver, copper, or combinations thereof. The semiconductor nanocrystals or nanoparticles comprising semiconductor nanocrystals may not include manganese, cobalt, or combinations thereof. In the embodiments, the semiconductor nanocrystals may have a tetragonal crystal structure. Indium zinc selenide with a tetragonal crystal structure may have a lattice constant a of about 5.75 Å and a lattice constant c of about 11.63 Å.

[0103] In semiconductor nanocrystals or nanoparticles, the molar ratio of indium to selenium (In:Se) can be greater than or equal to about 0.11:1, greater than or equal to about 0.13:1, greater than or equal to about 0.15:1, greater than or equal to about 0.17:1, greater than or equal to about 0.19:1, greater than or equal to about 0.2:1, greater than or equal to about 0.21:1, greater than or equal to about 0.23:1, greater than or equal to about 0.25:1, greater than or equal to about 0.27:1, greater than or equal to about 0.29:1, greater than or equal to about 0.3:1, greater than or equal to about 0.31:1, greater than or equal to about 0.33:1, greater than or equal to about 0.35:1, greater than or equal to about 0.37:1, or greater than or equal to about 0.39:1. In semiconductor nanocrystals or nanoparticles, the molar ratio of indium to selenium (In:Se) can be less than or equal to about 0.49:1, less than or equal to about 0.48:1, less than or equal to about 0.47:1, less than or equal to about 0.45:1, less than or equal to about 0.43:1, less than or equal to about 0.42:1, less than or equal to about 0.41:1, less than or equal to about 0.4:1, less than or equal to about 0.39:1, less than or equal to about 0.38:1, less than or equal to about 0.36:1, less than or equal to about 0.34:1, less than or equal to about 0.32:1, or less than or equal to about 0.28:1.

[0104] In semiconductor nanocrystals or nanoparticles, the molar ratio of indium to the sum of zinc and indium (In:(Zn+In)) can be greater than or equal to approximately 0.017:1, greater than or equal to approximately 0.02:1, greater than or equal to approximately 0.025:1, greater than or equal to approximately 0.03:1, greater than or equal to approximately 0.05:1, greater than or equal to approximately 0.07:1, greater than or equal to approximately 0.09:1, greater than or equal to approximately 0.1:1, greater than or equal to approximately 0.109:1, greater than or equal to approximately 0.11:1, greater than or equal to approximately 0.13:1, greater than or equal to approximately 0.15:1, greater than or equal to approximately 0.17:1, greater than or equal to approximately 0.19:1, greater than or equal to approximately 0.2:1, or greater than or equal to approximately 0.21:1. The ratios are: greater than or equal to approximately 0.22:1, greater than or equal to approximately 0.23:1, greater than or equal to approximately 0.25:1, greater than or equal to approximately 0.27:1, greater than or equal to approximately 0.28:1, greater than or equal to approximately 0.29:1, greater than or equal to approximately 0.3:1, greater than or equal to approximately 0.31:1, greater than or equal to approximately 0.33:1, greater than or equal to approximately 0.35:1, greater than or equal to approximately 0.36:1, greater than or equal to approximately 0.37:1, greater than or equal to approximately 0.39:1, greater than or equal to approximately 0.4:1, greater than or equal to approximately 0.41:1, greater than or equal to approximately 0.43:1, greater than or equal to approximately 0.45:1, greater than or equal to approximately 0.47:1, or greater than or equal to approximately 0.49:1. In semiconductor nanocrystals or nanoparticles, the molar ratio of indium to the sum of zinc and indium (In:(Zn+In)) can be less than or equal to about 0.8:1, less than or equal to about 0.75:1, less than or equal to about 0.7:1, less than or equal to about 0.65:1, less than or equal to about 0.6:1, less than or equal to about 0.55:1, less than or equal to about 0.5:1, or less than or equal to about 0.48:1.

[0105] In semiconductor nanocrystals or nanoparticles, the molar ratio of zinc to indium (Zn:In) can be greater than or equal to about 0.9:1, greater than or equal to about 0.95:1, greater than or equal to about 0.99:1, greater than or equal to about 1:1, greater than or equal to about 1.1:1, greater than or equal to about 1.15:1, greater than or equal to about 1.2:1, greater than or equal to about 1.25:1, greater than or equal to about 1.3:1, greater than or equal to about 1.35:1, greater than or equal to about 1.4:1, greater than or equal to about 1.45:1, greater than or equal to about 1.5:1, greater than or equal to about 1.6:1, greater than or equal to about 1.65:1, greater than or equal to about 1.7:1, or greater than or equal to about 1.75:1. In semiconductor nanocrystals or nanoparticles, the molar ratio of zinc to indium (Zn:In) can be less than or equal to approximately 12:1, less than or equal to approximately 10:1, less than or equal to approximately 9:1, less than or equal to approximately 8.8:1, less than or equal to approximately 8.4:1, less than or equal to approximately 8:1, less than or equal to approximately 7.5:1, less than or equal to approximately 7:1, less than or equal to approximately 6.5:1, less than or equal to approximately 6:1, less than or equal to approximately 5.5:1, less than or equal to approximately... 5:1, less than or equal to about 4.8:1, less than or equal to about 4.6:1, less than or equal to about 4.4:1, less than or equal to about 4.2:1, less than or equal to about 4:1, less than or equal to about 3.8:1, less than or equal to about 3.6:1, less than or equal to about 3.4:1, less than or equal to about 3.2:1, less than or equal to about 3:1, less than or equal to about 2.8:1, less than or equal to about 2.6:1, or less than or equal to about 2.4:1.

[0106] In semiconductor nanocrystals or nanoparticles, the molar ratio of zinc to selenium (Zn:Se) can be greater than or equal to approximately 0.38:1, greater than or equal to approximately 0.4:1, greater than or equal to approximately 0.41:1, greater than or equal to approximately 0.42:1, greater than or equal to approximately 0.44:1, greater than or equal to approximately 0.46:1, greater than or equal to approximately 0.48:1, greater than or equal to approximately 0.5:1, greater than or equal to approximately 0.52:1, greater than or equal to approximately 0.54: 1. Greater than or equal to approximately 0.56:1, greater than or equal to approximately 0.58:1, greater than or equal to approximately 0.6:1, greater than or equal to approximately 0.62:1, greater than or equal to approximately 0.64:1, greater than or equal to approximately 0.66:1, greater than or equal to approximately 0.68:1, greater than or equal to approximately 0.7:1, greater than or equal to approximately 0.72:1, greater than or equal to approximately 0.74:1, greater than or equal to approximately 0.78:1, or greater than or equal to approximately 0.8:1. In semiconductor nanocrystals or nanoparticles, the molar ratio of zinc to selenium (Zn:Se) can be less than or equal to about 1.5:1, less than or equal to about 1.45:1, less than or equal to about 1.4:1, less than or equal to about 1.36:1, less than or equal to about 1.34:1, less than or equal to about 1.3:1, less than or equal to about 1.25:1, less than or equal to about 1.2:1, less than or equal to about 1.15:1, less than or equal to about 1.1:1, less than or equal to about 1.06:1, less than or equal to about 1.04:1, less than or equal to about 1:1, less than or equal to about 0.9:1, less than or equal to about 0.8:1, or less than or equal to about 0.75:1.

[0107] In semiconductor nanocrystals or nanoparticles, the charge balance value obtained by the following formula can be greater than or equal to about 0.8, greater than or equal to about 0.83, greater than or equal to about 0.85, greater than or equal to about 0.87, greater than or equal to about 0.9, greater than or equal to about 0.91, greater than or equal to about 0.93, greater than or equal to about 0.95, greater than or equal to about 0.97, greater than or equal to about 0.99, greater than or equal to about 1, greater than or equal to about 1.01, greater than or equal to about 1.03, greater than or equal to about 1.05, greater than or equal to about 1.07, greater than or equal to about 1.09, greater than or equal to about 1.1, greater than or equal to about 1.13, greater than or equal to about 1.15, greater than or equal to about 1.17, greater than or equal to about 1.2, greater than or equal to about 1.23, greater than or equal to about 1.25, greater than or equal to about 1.27, or greater than or equal to about 1.3:

[0108] Charge balance value = {2×[Zn]+3×[In]} / (2×[Se])

[0109] Wherein, [Zn], [In] and [Se] are the molar amounts of zinc, indium and selenium in semiconductor nanocrystals or nanoparticles, respectively.

[0110] The charge balance value may be less than or equal to about 1.9, less than or equal to about 1.85, less than or equal to about 1.8, less than or equal to about 1.75, less than or equal to about 1.6, less than or equal to about 1.55, less than or equal to about 1.5, less than or equal to about 1.45, less than or equal to about 1.4, less than or equal to about 1.35, less than or equal to about 1.3, less than or equal to about 1.25, less than or equal to about 1.2, less than or equal to about 1.15, or less than or equal to about 1.1.

[0111] Based on the total amount of indium, zinc, and selenium, semiconductor nanocrystals may have an amount of indium greater than or equal to about 3 atomic%, greater than or equal to about 5 atomic%, greater than or equal to about 7 atomic%, greater than or equal to about 9 atomic%, greater than or equal to about 10 atomic%, greater than or equal to about 11 atomic%, greater than or equal to about 12 atomic%, greater than or equal to about 13 atomic%, greater than or equal to about 14 atomic%, greater than or equal to about 15 atomic%, greater than or equal to about 16 atomic%, greater than or equal to about 17 atomic%, greater than or equal to about 18 atomic%, greater than or equal to about 19 atomic%, greater than or equal to about 20 atomic%, greater than or equal to about 21 atomic%, greater than or equal to about 22 atomic%, greater than or equal to about 23 atomic%, greater than or equal to about 24 atomic%, or greater than or equal to about 25 atomic%. Based on the total amount of indium, zinc, and selenium, semiconductor nanocrystals may have an amount of indium of less than or equal to about 50 atomic%, less than or equal to about 40 atomic%, less than or equal to about 35 atomic%, less than or equal to about 30 atomic%, less than or equal to about 28 atomic%, less than or equal to about 25 atomic%, or less than or equal to about 23 atomic%.

[0112] In related technologies, crystals comprising indium zinc selenide and having nanoscale dimensions have been incorporated with dopants in order to emit light of a desired wavelength. Dopants may include copper, silver, manganese, cobalt, etc. Surprisingly, the inventors have discovered that even without such dopants, the indium zinc selenide-containing semiconductor nanocrystals according to the embodiments can emit light of a desired wavelength by altering their composition as described herein. In the embodiments, the semiconductor nanocrystals can be synthesized as described herein and can exhibit the compositions described herein (e.g., molar ratios between components or combinations thereof).

[0113] In embodiments, the emission wavelength of the semiconductor nanocrystals or nanoparticles comprising them can be controlled by controlling the indium content relative to selenium (and / or the indium content relative to zinc) in the semiconductor nanocrystals or nanoparticles as described herein. Changes in the relative indium content (e.g., relative to selenium or zinc) can cause variations in trap emission in the semiconductor nanocrystals. While zinc selenide can exhibit band-edge emission in the range of 390 nm to 400 nm, in the semiconductor nanocrystals of the embodiments, an increase in the indium content can cause trap emission with a peak emission wavelength greater than or equal to about 600 nm and an increase in the intensity of this trap emission, which can indicate a change in the band gap energy of the semiconductor nanocrystals.

[0114] Without being bound by any theory, it is believed that this trap emission within this wavelength range indicates that nanoparticles, including semiconductor nanocrystals, can exhibit peak emission wavelengths in the green light wavelength region. For example, when the indium content is 25 atomic% based on the total amount of elements in the semiconductor nanocrystal, trap emission at approximately 665 nm can be observed. In the semiconductor nanocrystals of the embodiments, increasing the indium content can lead to a decrease in the band gap energy of the semiconductor nanocrystals. For example, although semiconductor nanocrystals made of zinc selenide can have a band gap energy of approximately 3.12 eV, surprisingly, the inventors have found that in the semiconductor nanocrystals of the embodiments, when the indium content based on the total amount of indium, zinc, and selenium becomes 1 atomic%, 5 atomic%, 10 atomic%, or 25 atomic%, the band gap can become approximately 3.05 eV, approximately 2.90 eV, approximately 2.80 eV, and approximately 2.48 eV, respectively, and the trap emission peak increases.

[0115] In other words, in the UV-Vis absorption spectrum, the semiconductor nanocrystals or nanoparticles comprising semiconductor nanocrystals of the embodiments may exhibit absorption edge wavelengths that vary with the indium content ratio. An absorption edge, or band edge, generally refers to the transition between strong short-wavelength absorption and weak long-wavelength absorption in the spectrum of a solid semiconductor. The semiconductor nanocrystals or nanoparticles comprising semiconductor nanocrystals may exhibit absorption edge wavelengths less than or equal to about 540 nm, less than or equal to about 535 nm, less than or equal to about 530 nm, less than or equal to about 520 nm, less than or equal to about 515 nm, less than or equal to about 510 nm, less than or equal to about 505 nm, less than or equal to about 500 nm, less than or equal to about 495 nm, or less than or equal to about 490 nm. Absorption edges may appear at wavelengths greater than or equal to about 380 nm, greater than or equal to about 385 nm, greater than or equal to about 390 nm, greater than or equal to about 395 nm, or greater than or equal to about 400 nm. In the semiconductor nanocrystals of the embodiments, when the indium content is changed to 1 atomic%, 5 atomic%, 10 atomic%, or 25 atomic% based on the total amount of indium, zinc, and selenium, the absorption edge wavelength can be changed to about 406 nm, about 427 nm, about 442 nm, and about 499 nm, respectively.

[0116] Therefore, in embodiments, semiconductor nanocrystals or nanoparticles comprising semiconductor nanocrystals may emit first light (e.g., semiconductor nanocrystals or nanoparticles comprising semiconductor nanocrystals may emit first light even without additional dopants). The first light may be trap emission. The first light may be band-edge emission. The first light or trap emission may have a peak emission wavelength greater than or equal to about 500 nm, greater than or equal to about 505 nm, greater than or equal to about 510 nm, greater than or equal to about 515 nm, greater than or equal to about 520 nm, greater than or equal to about 525 nm, greater than or equal to about 530 nm, greater than or equal to about 535 nm, greater than or equal to about 540 nm, greater than or equal to about 545 nm, greater than or equal to about 550 nm, greater than or equal to about 555 nm, greater than or equal to about 560 nm, greater than or equal to about 570 nm, greater than or equal to about 580 nm, greater than or equal to about 590 nm, or greater than or equal to about 600 nm. The first light or trap emission may have a wavelength of less than or equal to about 800 nm, less than or equal to about 780 nm, less than or equal to about 750 nm, less than or equal to about 720 nm, less than or equal to about 700 nm, less than or equal to about 690 nm, less than or equal to about 685 nm, less than or equal to about 680 nm, less than or equal to about 675 nm, less than or equal to about 670 nm, less than or equal to about 665 nm, less than or equal to about 660 nm, less than or equal to about 655 nm, or less than or equal to about 650 nm. Peak emission wavelengths less than or equal to approximately 645 nm, less than or equal to approximately 640 nm, less than or equal to approximately 635 nm, less than or equal to approximately 630 nm, less than or equal to approximately 625 nm, less than or equal to approximately 620 nm, less than or equal to approximately 615 nm, less than or equal to approximately 610 nm, less than or equal to approximately 605 nm, less than or equal to approximately 600 nm, less than or equal to approximately 590 nm, less than or equal to approximately 585 nm, less than or equal to approximately 570 nm, or less than or equal to approximately 560 nm.

[0117] The first light may have a peak emission with a full width at half maximum (FWHM) in the range of about 5 nm to about 200 nm, about 10 nm to about 150 nm, about 20 nm to about 130 nm, about 30 nm to about 110 nm, about 35 nm to about 105 nm, about 40 nm to about 100 nm, about 45 nm to about 95 nm, about 50 nm to about 90 nm, about 55 nm to about 85 nm, about 60 nm to about 80 nm, about 65 nm to about 75 nm, about 68 nm to about 70 nm, or combinations thereof.

[0118] In an embodiment, the first light may be trap emission, and the trap emission peak may have a full width at half maximum (FWHM) greater than or equal to about 50 nm, greater than or equal to about 55 nm, greater than or equal to about 60 nm, greater than or equal to about 65 nm, greater than or equal to about 70 nm, greater than or equal to about 75 nm, greater than or equal to about 80 nm, greater than or equal to about 85 nm, greater than or equal to about 90 nm, greater than or equal to about 95 nm, or greater than or equal to about 100 nm. The FWHM of the trap emission peak may be less than or equal to about 200 nm, less than or equal to about 180 nm, less than or equal to about 170 nm, less than or equal to about 160 nm, less than or equal to about 150 nm, less than or equal to about 140 nm, less than or equal to about 130 nm, or less than or equal to about 120 nm.

[0119] In embodiments, semiconductor nanocrystals or nanoparticles comprising semiconductor nanocrystals may exhibit a first absorption peak or a first exciton peak in the UV-Vis absorption spectrum. The first absorption peak or first exciton peak may refer to the lowest energy transition associated with an exciton, which is a bound electron-hole pair representing a fundamental optical excitation in a semiconductor. Such a peak is related to the optical properties of various materials including nanoparticles. The wavelength of the first absorption peak or the wavelength of the first exciton peak are the wavelengths at which the first absorption peak or the first exciton peak exhibits maximum absorption. The wavelength of the first absorption peak or the wavelength of the first exciton peak may be determined as the point where the first derivative of the UV spectrum equals zero; if there is no point where the first derivative is zero, it may be defined as the point where the second derivative changes from negative to positive between the maximum and minimum values ​​of the first derivative plot. In the UV-Vis absorption spectra of nanoparticles or semiconductor nanocrystals, the wavelength of the first absorption peak can be greater than or equal to approximately 370 nm, greater than or equal to approximately 375 nm, greater than or equal to approximately 380 nm, greater than or equal to approximately 385 nm, greater than or equal to approximately 390 nm, greater than or equal to approximately 395 nm, greater than or equal to approximately 400 nm, greater than or equal to approximately 405 nm, greater than or equal to approximately 410 nm, greater than or equal to approximately 415 nm, greater than or equal to approximately 420 nm, greater than or equal to approximately 425 nm, greater than or equal to approximately 430 nm, greater than or equal to approximately 430 nm, and greater than or equal to approximately 430 nm. 5nm, greater than or equal to about 440nm, greater than or equal to about 445nm, greater than or equal to about 450nm, greater than or equal to about 455nm, greater than or equal to about 460nm, greater than or equal to about 465nm, greater than or equal to about 470nm, greater than or equal to about 475nm, greater than or equal to about 480nm, greater than or equal to about 485nm, greater than or equal to about 490nm, greater than or equal to about 495nm, greater than or equal to about 500nm, greater than or equal to about 505nm, greater than or equal to about 510nm, or greater than or equal to about 515nm. The first absorption peak wavelength of the nanoparticles or semiconductor nanocrystals may be less than or equal to about 530 nm, less than or equal to about 526 nm, less than or equal to about 521 nm, less than or equal to about 516 nm, less than or equal to about 511 nm, less than or equal to about 506 nm, less than or equal to about 501 nm, less than or equal to about 496 nm, less than or equal to about 491 nm, or less than or equal to about 486 nm.

[0120] Semiconductor nanocrystals can have a tetragonal crystal structure, and when observed with a transmission electron microscope, nanoparticles or semiconductor nanocrystals can exhibit, for example, tetrahedral or pyramidal shapes. The inventors have discovered that the indium content in semiconductor nanocrystals can also affect the morphology of the semiconductor nanocrystals or nanoparticles comprising semiconductor nanocrystals. With increasing indium content, the semiconductor nanocrystals or nanoparticles comprising semiconductor nanocrystals in the embodiments can exhibit increased crystallinity. Increased crystallinity can lead to self-assembly, but is not limited to this.

[0121] In embodiments, the semiconductor nanocrystals may have dimensions (or average dimensions) greater than or equal to about 3 nm, greater than or equal to about 3.5 nm, greater than or equal to about 4 nm, greater than or equal to about 4.5 nm, greater than or equal to about 5 nm, greater than or equal to about 5.5 nm, greater than or equal to about 6 nm, greater than or equal to about 6.5 nm, greater than or equal to about 7 nm, greater than or equal to about 7.5 nm, greater than or equal to about 8 nm, greater than or equal to about 8.5 nm, greater than or equal to about 9 nm, greater than or equal to about 9.5 nm, greater than or equal to about 10 nm, or greater than or equal to about 10.5 nm. The size of semiconductor nanocrystals can be less than or equal to about 50 nm, less than or equal to about 48 nm, less than or equal to about 46 nm, less than or equal to about 44 nm, less than or equal to about 42 nm, less than or equal to about 40 nm, less than or equal to about 35 nm, less than or equal to about 30 nm, less than or equal to about 25 nm, less than or equal to about 20 nm, less than or equal to about 18 nm, less than or equal to about 16 nm, less than or equal to about 14 nm, less than or equal to about 12 nm, less than or equal to about 11 nm, less than or equal to about 10 nm, less than or equal to about 8 nm, less than or equal to about 7 nm, less than or equal to about 6 nm, or less than or equal to about 4 nm.

[0122] In embodiments, the nanoparticles may further include a layer (e.g., a shell) disposed on the semiconductor nanocrystal. The shell may be a multilayer shell. The shell may include a semiconductor nanocrystal (hereinafter also referred to as a second semiconductor nanocrystal) having a different composition from the semiconductor nanocrystal (hereinafter also referred to as a first semiconductor nanocrystal). The semiconductor nanocrystal included in the shell may include group 12-16 compounds. Group 12-16 compounds may include zinc chalcogenides (e.g., zinc selenide, zinc sulfide, zinc sulfoselenide, or combinations thereof).

[0123] The thickness of the shell can be appropriately selected. In embodiments, the shell may have a thickness greater than or equal to about 0.1 nm, greater than or equal to about 0.3 nm, greater than or equal to about 0.5 nm, greater than or equal to about 0.7 nm, or greater than or equal to about 1 nm. The shell thickness may be less than or equal to about 2 nm, less than or equal to about 1.5 nm, less than or equal to about 1 nm, or less than or equal to about 0.8 nm. The shell thickness may be within the range of about 0.1 nm to about 5 nm, about 0.2 nm to about 4 nm, about 0.3 nm to about 3.5 nm, about 0.4 nm to about 3 nm, about 0.5 nm to about 2.5 nm, about 0.6 nm to about 2 nm, about 0.7 nm to about 1.5 nm, about 0.8 nm to about 1.2 nm, about 0.9 nm to about 1 nm, or combinations thereof.

[0124] In the embodiments, the nanoparticles may have a size (or average size) greater than or equal to about 3 nm, greater than or equal to about 3.5 nm, greater than or equal to about 4 nm, greater than or equal to about 4.5 nm, greater than or equal to about 5 nm, greater than or equal to about 5.5 nm, greater than or equal to about 6 nm, greater than or equal to about 6.5 nm, greater than or equal to about 7 nm, greater than or equal to about 7.5 nm, greater than or equal to about 8 nm, greater than or equal to about 8.5 nm, greater than or equal to about 9 nm, greater than or equal to about 9.5 nm, greater than or equal to about 10 nm, or greater than or equal to about 10.5 nm. The size of the nanoparticles can be less than or equal to about 50 nm, less than or equal to about 48 nm, less than or equal to about 46 nm, less than or equal to about 44 nm, less than or equal to about 42 nm, less than or equal to about 40 nm, less than or equal to about 35 nm, less than or equal to about 30 nm, less than or equal to about 25 nm, less than or equal to about 20 nm, less than or equal to about 18 nm, less than or equal to about 16 nm, less than or equal to about 14 nm, less than or equal to about 12 nm, less than or equal to about 11 nm, less than or equal to about 10 nm, less than or equal to about 8 nm, less than or equal to about 7 nm, less than or equal to about 6 nm, or less than or equal to about 4 nm.

[0125] As used herein, the size of a semiconductor nanocrystal or nanoparticle can be the particle diameter. The size of the semiconductor nanocrystal or nanoparticle can be obtained from images identified by analysis using an electron microscope (e.g., a transmission electron microscope). The size of the semiconductor nanocrystal or nanoparticle can be an equivalent diameter obtained through calculations involving converting the two-dimensional area of ​​the particle obtained from the electron microscope image into a circle. Such a size can be reproducibly and easily obtained from the microscope image using various image processing programs (e.g., ImageJ or internal programs that can be created using a coding language). The particle size can be a value calculated from the composition and peak emission wavelength of the semiconductor nanoparticle (e.g., the nominal particle size).

[0126] The semiconductor nanocrystals of the embodiments can be obtained by the methods described herein. In the embodiments, the method of manufacturing nanoparticles or semiconductor nanocrystals includes contacting an indium precursor, a selenium precursor, and a zinc precursor in an organic solvent in the presence of an organic ligand at a reaction temperature. The reaction temperature is greater than or equal to about 230°C and less than or equal to about 380°C. The inventors have surprisingly confirmed that semiconductor nanocrystals or nanoparticles comprising semiconductor nanocrystals manufactured by the methods described herein can emit light of a desired wavelength even without the introduction of additional metal dopants (e.g., copper, silver, cobalt, manganese, etc.).

[0127] In some embodiments, the method or contact may include: preparing a reaction solution comprising an indium precursor, a selenium precursor, and an organic ligand in an organic solvent; heating the reaction solution to a reaction temperature; and adding a zinc precursor to the reaction solution.

[0128] Before being heated to the reaction temperature, the reaction solution may undergo pretreatment at a predetermined temperature (e.g., at a predetermined temperature under vacuum). The predetermined temperature for pretreatment may be greater than or equal to about 50°C, greater than or equal to about 60°C, greater than or equal to about 70°C, greater than or equal to about 80°C, greater than or equal to about 90°C, greater than or equal to about 100°C, greater than or equal to about 110°C, or greater than or equal to about 120°C. The predetermined temperature for pretreatment may be less than or equal to about 180°C, less than or equal to about 170°C, less than or equal to about 160°C, less than or equal to about 150°C, less than or equal to about 140°C, or less than or equal to about 130°C. There are no particular limitations on the pretreatment time, which may be determined taking into account the type of precursor and the predetermined temperature for pretreatment. The pretreatment time may be greater than or equal to about 5 minutes, greater than or equal to about 10 minutes, or greater than or equal to about 15 minutes, and less than or equal to about 100 minutes, less than or equal to about 50 minutes, or less than or equal to about 30 minutes, but is not limited thereto.

[0129] The zinc precursor can be added to the reaction solution at a first temperature. The selenium precursor can be added to the reaction solution at a first temperature. The first temperature can be greater than or equal to about 120°C, greater than or equal to about 130°C, greater than or equal to about 140°C, greater than or equal to about 150°C, greater than or equal to about 160°C, greater than or equal to about 170°C, greater than or equal to about 180°C, greater than or equal to about 190°C, greater than or equal to about 200°C, greater than or equal to about 210°C, or greater than or equal to about 220°C. The first temperature may be less than or equal to the reaction temperature (e.g., less than or equal to about 300°C, less than or equal to about 290°C, less than or equal to about 280°C, less than or equal to about 270°C, less than or equal to about 260°C, less than or equal to about 250°C, less than or equal to about 240°C, less than or equal to about 230°C, less than or equal to about 220°C, less than or equal to about 210°C, less than or equal to about 200°C, less than or equal to about 190°C, or less than or equal to about 180°C).

[0130] The reaction temperature can be greater than or equal to about 230°C, greater than or equal to about 235°C, greater than or equal to about 240°C, greater than or equal to about 245°C, greater than or equal to about 250°C, greater than or equal to about 255°C, greater than or equal to about 260°C, greater than or equal to about 265°C, greater than or equal to about 270°C, greater than or equal to about 275°C, or greater than or equal to about 280°C. The reaction temperature can be less than or equal to about 380°C, less than or equal to about 360°C, less than or equal to about 340°C, less than or equal to about 320°C, less than or equal to about 300°C, or less than or equal to about 290°C.

[0131] The response time can be selected by considering factors such as the desired peak emission wavelength and the type of precursor. Response times can be greater than or equal to approximately 10 minutes, greater than or equal to approximately 15 minutes, greater than or equal to approximately 20 minutes, greater than or equal to approximately 25 minutes, greater than or equal to approximately 30 minutes, greater than or equal to approximately 35 minutes, greater than or equal to approximately 40 minutes, greater than or equal to approximately 45 minutes, greater than or equal to approximately 50 minutes, greater than or equal to approximately 55 minutes, or greater than or equal to approximately 60 minutes. Response times can be less than or equal to approximately 5 hours, less than or equal to approximately 4 hours, less than or equal to approximately 3 hours, less than or equal to approximately 2 hours, less than or equal to approximately 1 hour, or less than or equal to approximately 45 minutes.

[0132] The method may further include reacting a metal precursor for shell formation and a non-metal precursor for shell formation in the presence of semiconductor nanocrystals to form a shell (including a shell of a second semiconductor nanocrystal) on the semiconductor nanocrystals. The metal precursor and non-metal precursor for shell formation may be selected with consideration of the composition of the second semiconductor nanocrystals. The metal precursor for shell formation may include: metal powder, alkylated metal, metal carboxylates, metal nitrates, metal acetylacetonates, metal halides (metal chlorides, metal bromides, metal fluorides, metal iodides), metal cyanides, metal carbonates, metal peroxides, metal hydroxides, or combinations thereof. In embodiments, the metal precursor for shell formation includes a zinc precursor, and the non-metal precursor for shell formation may include a selenium precursor, a sulfur precursor, or combinations thereof. The shell formation reaction temperature is not particularly limited and may be referenced to the reaction temperatures described above. The shell formation reaction time is also not particularly limited and may be appropriately selected with consideration of the type of precursor, shell composition, and shell formation reaction temperature.

[0133] There are no particular restrictions on the type of zinc precursor, and it can be selected appropriately. For example, zinc precursors may include zinc metal powder, alkyl zinc compounds, zinc alkoxides, zinc carboxylates, zinc nitrates, zinc perchlorates, zinc sulfates, zinc acetylacetonates, zinc halides, zinc cyanides, zinc hydroxides, zinc oxides, zinc peroxides, or combinations thereof. Zinc precursors may include dimethyl zinc, diethyl zinc, zinc acetate, zinc acetylacetonate, zinc iodide, zinc bromide, zinc chloride, zinc fluoride, zinc carbonate, zinc cyanide, zinc nitrate, zinc oxide, zinc peroxide, zinc perchlorate, zinc sulfate, or combinations thereof. Zinc precursors may also include zinc acetate, zinc carboxylate, alkyl zinc, or combinations thereof.

[0134] There are no particular restrictions on the type of indium precursor, and it can be selected appropriately. Indium precursors can be indium powder, indium alkylates, indium alkoxides, indium carboxylates, indium nitrates, indium perchlorate, indium sulfate, indium acetylacetonate, indium halides, indium cyanides, indium hydroxides, indium oxides, indium peroxides, indium carbonates, or combinations thereof. Indium precursors may include indium carboxylate (such as indium oleate or indium myristate), indium acetate, indium hydroxide, indium chloride, indium bromide, or indium iodide.

[0135] Selenium precursors may include, but are not limited to, selenium-trioctylphosphine (Se-TOP), selenium-tributylphosphine (Se-TBP), selenium-triphenylphosphine (Se-TPP), selenium-diphenylphosphine (Se-DPP), or combinations thereof.

[0136] The organic solvent may include primary amine compounds of C6 to C40 or C5 to C30. The organic solvent may also include primary amine compounds (such as hexadecylamine or oleylamine) containing aliphatic hydrocarbon groups (e.g., alkyl, alkenyl, or alkynyl) of C6 to C40. Based on the total volume of the organic solvent, the amount of primary amine compounds in the organic solvent may be greater than or equal to about 20%, greater than or equal to about 30%, greater than or equal to about 40%, greater than or equal to about 50%, greater than or equal to about 60%, greater than or equal to about 70%, greater than or equal to about 80%, or greater than or equal to about 90%. Based on the total volume of the organic solvent, the amount of primary amine compounds in the organic solvent may be less than or equal to about 100%, less than or equal to about 95%, less than or equal to about 85%, less than or equal to about 75%, less than or equal to about 65%, less than or equal to about 55%, less than or equal to about 45%, less than or equal to about 35%, or less than or equal to about 25%. In embodiments, the organic solvent may or may not include additional solvents. The additional solvent may be a secondary amine of C6 to C40 or C8 to C22 (such as dioctylamine), a tertiary amine of C6 to C40 or C8 to C22 (such as trioctylamine), a nitrogen-containing heterocyclic compound (such as pyridine), an aliphatic hydrocarbon (such as hexane, heptane, octane, octadecene, hexadecane, octadecane (ODE) or squalane), an aromatic hydrocarbon substituted with C6 to C30 alkyl groups (such as phenyldodecane, phenyltetradecane or phenylhexadecane), a primary, secondary or tertiary phosphine substituted with at least one (e.g., 1, 2 or 3) C6 to C22 alkyl groups (e.g., trioctylphosphine), a phosphine oxide substituted with at least one (e.g., 1, 2 or 3) C6 to C22 alkyl groups (e.g., trioctylphosphine oxide), an aromatic ether (such as C12 to C22 phenyl ether or benzyl ether), or a combination thereof. When present, the volume ratio of organic solvent to additional solvent (organic solvent: additional solvent) may be in the range of 1:0.1 to 4.5, 1:0.2 to 4, 1:0.3 to 3, 1:0.4 to 2.5, 1:0.45 to 2, 1:0.5 to 1.8, 1:0.6 to 1.2, 1:0.7 to 1.1, 1:0.8 to 1, 1:0.85 to 0.95, 1:0.9 to 0.93, or a combination thereof.

[0137] Organic ligands can coordinate to the surface of the prepared semiconductor nanoparticles, allowing the nanoparticles to be well dispersed in solution. Organic ligands may include RCOOH, RNH2, R2NH, R3N, RSH, RH2PO, R2HPO, R3PO, RH2P, R2HP, R3P, ROH, RCOOR', RPO(OH)2, RHPOOH, R2POOH, or combinations thereof, wherein R and R' are each independently a substituted or unsubstituted aliphatic hydrocarbon of about C1, about C6, or about C10 and less than or equal to about C40, less than or equal to about C35, or less than or equal to about C25, or an aromatic hydrocarbon of C6 to C40, or combinations thereof. Ligands may be used alone or as a mixture of two or more compounds. The reaction solution may also include the organic ligand. In the examples, R and R' are each independently a substituted or unsubstituted C1 to C40 (or C3 to C24) aliphatic hydrocarbon (e.g., alkyl, alkenyl, or alkynyl) or a substituted or unsubstituted C6 to C40 (or C6 to C24) aromatic hydrocarbon (e.g., C6 to C20 aryl). Examples of organic ligands may include: methanethiol, ethanethiol, propanethiol, butanethiol, pentathiol, hexanethiol, heptanethiol, octanethiol, nonanethiol, decanethiol, dodecylthiol, hexadecylthiol, octadecylthiol, benzylthiol; methylamine, ethylamine, propylamine, butylamine, pentaamine, hexaneamine, octylamine, dodecylamine, hexadecylamine, octadecylamine, dimethylamine, diethylamine, dipropylamine; formic acid, acetic acid, propionic acid, butyric acid, valeric acid, hexanoic acid, heptanoic acid, octanoic acid, dodecanoic acid, hexadecanoic acid, octadecanoic acid, oleic acid, benzoic acid; substituted or unsubstituted methylphosphine (e.g., trimethylphosphine, methyldiphenylphosphine), substituted or unsubstituted ethylphosphine (e.g., triethylphosphine, ethyldiphenylphosphine). ), substituted or unsubstituted propylphosphine, butylphosphine, pentylphosphine, octylphosphine (e.g., trioctylphosphine (TOP)); substituted or unsubstituted methylphosphine oxide (e.g., trimethylphosphine oxide, methyl diphenylphosphine oxide), ethylphosphine oxide (e.g., triethylphosphine oxide, ethyl diphenylphosphine oxide), propylphosphine oxide, butylphosphine oxide, octylphosphine oxide (e.g., trioctylphosphine oxide (TOPO)); diphenylphosphine, triphenylphosphine compounds, or oxides thereof; phosphonic acids, hexylphosphine, octylphosphine, dodecylphosphine, tetradecylphosphine, hexadecylphosphine, octadecylphosphine, C5 to C20 alkylphosphines; or combinations thereof.

[0138] In the embodiments, the reaction solution or organic ligand may not include dodecyl mercaptan. The reaction solution or organic ligand may not include thiols.

[0139] After the reaction is complete, excess non-solvent can be decanted to remove any additional organic material not coordinated to the surface, and the resulting mixture can be centrifuged to recover the semiconductor nanocrystals or nanoparticles comprising semiconductor nanocrystals. For example, after the reaction is terminated, semiconductor nanoparticles coordinated to the ligand compound can be separated by adding a non-solvent to the reaction product. The non-solvent can be a polar solvent that is miscible with the solvent used in the core-forming and / or shell-forming reaction but is not capable of dispersing the produced nanocrystals. The non-solvent can be determined based on the solvent used in the reaction and may include, for example, acetone, ethanol, butanol, isopropanol, ethylene glycol, water, tetrahydrofuran (THF), dimethyl sulfoxide (DMSO), diethyl ether, formaldehyde, acetaldehyde, ethylene glycol, solvents having solubility parameters similar to those of the solvents listed above, or combinations thereof. Separation can be performed using centrifugation, precipitation, chromatography, or distillation. If necessary, the separated nanocrystals can be washed by adding them to a washing solvent. There are no particular restrictions on the washing solvent, and solvents with solubility parameters similar to those of the ligand can be used, examples of which include hexane, heptane, octane, chloroform, toluene, and benzene.

[0140] Semiconductor nanocrystals or nanoparticles may be non-dispersible or insoluble in water, the aforementioned non-solvents, or combinations thereof. Semiconductor nanocrystals or nanoparticles may be dispersed in the aforementioned organic solvents. In embodiments, semiconductor nanocrystals or nanoparticles may be dispersed in C6 to C40 aliphatic hydrocarbons, substituted or unsubstituted C6 to C40 aromatic hydrocarbons, or combinations thereof.

[0141] The obtained semiconductor nanocrystals or nanoparticles comprising semiconductor nanocrystals (hereinafter referred to as "semiconductor nanoparticles") may exhibit the properties as described herein. The shape of the fabricated semiconductor nanoparticles is not particularly limited and may include, for example, spheres, polyhedra, cones, multi-armed structures, or cubes, nanotubes, nanowires, nanofibers, nanosheets, or combinations thereof, but is not limited thereto.

[0142] The fabricated semiconductor nanoparticles may include organic ligands and / or organic solvents on their surface. The organic ligands and / or organic solvents may be incorporated into the surface of the semiconductor nanoparticles of the embodiments. The organic ligands and organic solvents are as described herein.

[0143] In an embodiment, a composite includes a matrix and semiconductor nanoparticles dispersed in the matrix. The composite may also include fine metal oxide particles. The composite may be configured to emit a first light. The composite may be a patterned film. The first light may be green light. The composite may also include semiconductor nanoparticles configured to emit a second light different from the first light. The peak emission wavelengths of the first and second light may be as described herein. The composite may be in sheet form. The sheet may also include additional semiconductor nanoparticles configured to emit a second light different from the first light.

[0144] The composite may include semiconductor nanoparticles or groups of semiconductor nanoparticles (e.g., including semiconductor nanoparticles or groups of semiconductor nanoparticles in a predetermined amount). The incident light absorption of the composite may be greater than or equal to about 70%, greater than or equal to about 73%, greater than or equal to about 75%, greater than or equal to about 77%, greater than or equal to about 80%, greater than or equal to about 83%, greater than or equal to about 85%, greater than or equal to about 87%, greater than or equal to about 90%, greater than or equal to about 93%, greater than or equal to about 94%, greater than or equal to about 95%, greater than or equal to about 96%, greater than or equal to about 97%, greater than or equal to about 98%, or greater than or equal to about 99%. The incident light absorption of the composite may be from 70% to 100%, 80% to 98%, 95% to 99%, 96% to 98%, or combinations thereof.

[0145] The absorptivity of incident light can be defined as follows:

[0146] Absorption rate of incident light = [(B-B') / B]×100 (%)

[0147] B: The amount of incident light provided to the complex

[0148] B': The amount of incident light passing through the complex

[0149] The optical conversion efficiency (CE) or internal quantum efficiency (IQE) of the composite obtained by the following formula is greater than or equal to about 20%, greater than or equal to about 25%, greater than or equal to about 30%, greater than or equal to about 35%, greater than or equal to about 40%, or greater than or equal to about 45%:

[0150] Light conversion efficiency or internal quantum efficiency (IQE, %) = [A / (B-B')] × 100 (%)

[0151] External quantum efficiency (EQE, %) = [A / B] × 100 (%)

[0152] A: The amount of the first light emitted from the complex

[0153] B: The amount of incident light provided to the complex

[0154] B': The amount of incident light passing through the complex

[0155] According to the following formula, the composite of semiconductor nanoparticles, including those in the embodiments, may have a process retention rate greater than or equal to about 70%, greater than or equal to about 75%, greater than or equal to about 80%, greater than or equal to about 85%, greater than or equal to about 90%, or greater than or equal to about 100%:

[0156] Process retention rate (%) = [QE2 / QE1] × 100

[0157] In the above formula, QE1 is the (internal or external) quantum efficiency of the composite before heat treatment after polymerization, and QE2 is the (internal or external) quantum efficiency of the composite after heat treatment.

[0158] Process retention rates can range from 10% to 150%, 20% to 130%, 25% to 100%, 30% to 99%, 68% to 95%, 70% to 85%, or combinations thereof.

[0159] In the embodiments, the composite may be manufactured from the ink composition. The ink composition may include a liquid carrier and semiconductor nanoparticles as described in the embodiments (e.g., multiple embodiments). The semiconductor nanoparticles may be dispersed in the liquid carrier. The liquid carrier may include liquid monomers, organic solvents, or combinations thereof. The ink composition may also include or may substantially exclude volatile organic solvents. The ink composition may also include fine metal oxide particles (e.g., fine metal oxide particles dispersed in the liquid carrier). The ink composition may also include a dispersant (a dispersant for dispersing the semiconductor nanoparticles and / or the fine metal oxide particles). The dispersant may include an organic compound (monomer or polymer) containing a carboxylic acid group. The liquid carrier may exclude organic solvents (e.g., volatile organic solvents). The ink composition may be a solvent-free system.

[0160] The liquid monomer may include a (photo)polymerizable monomer comprising a carbon-carbon double bond. The composition may optionally further include a (thermal or photo) initiator. The composition may be polymerized by photo or thermal initiation. The ink composition may be polymerized to provide a complex.

[0161] Details of the nanoparticles in the composition (or composite) are as described herein. The amount of semiconductor nanoparticles in the composition (or composite) may be appropriately adjusted with regard to the desired end use (e.g., color filters, etc.). In embodiments, based on the solids content of the composition or composite (hereinafter, solids content may refer to the solids content of the composition or the solids content of the composite), the amount of semiconductor nanoparticles in the composition (or composite) may be greater than or equal to about 1 wt% (e.g., greater than or equal to about 2 wt%, greater than or equal to about 3 wt%, greater than or equal to about 4 wt%, greater than or equal to about 5 wt%, greater than or equal to about 6 wt%, greater than or equal to about 7 wt%, greater than or equal to about 8 wt%, greater than or equal to about 9 wt%, greater than or equal to about 10 wt%, greater than or equal to about 15 wt%, greater than or equal to about 20 wt%, greater than or equal to about 25 wt%, greater than or equal to about 30 wt%, greater than or equal to about 35 wt%, or greater than or equal to about 40 wt%). Based on the solids content of the composition or composite, the amount of semiconductor nanoparticles may be less than or equal to about 70 wt% (e.g., less than or equal to about 65 wt%, less than or equal to about 60 wt%, less than or equal to about 55 wt%, or less than or equal to about 50 wt%). The weight percentage of a given component relative to the total solids content in the composition can represent the amount of that given component in the composite described herein.

[0162] In embodiments, the ink composition may be a photoresist composition comprising semiconductor nanoparticles suitable for photolithography. In embodiments, the ink composition may be a composition comprising semiconductor nanoparticles capable of providing patterns by printing methods (e.g., droplet emission methods such as inkjet printing). The compositions according to embodiments may not include conjugated (or conductive) polymers (other than the cardo adhesive described herein). The compositions according to embodiments may include conjugated polymers. Here, a conjugated polymer refers to a polymer having conjugated double bonds in its main chain (e.g., polyphenylene ethylene, etc.).

[0163] In the compositions according to the embodiments, the dispersant ensures the dispersibility of nanoparticles (e.g., semiconductor nanoparticles). In the embodiments, the dispersant may be a binder (or binder polymer). The binder may include carboxylic acid groups (e.g., including carboxylic acid groups in repeating units). The binder may be an insulating polymer. The binder may be a compound (monomer or polymer) including carboxylic acid groups.

[0164] In the composition (or complex), the amount of dispersant may be greater than or equal to about 0.5 wt% (e.g., greater than or equal to about 1 wt%, greater than or equal to about 5 wt%, greater than or equal to about 10 wt%, greater than or equal to about 15 wt%, or greater than or equal to about 20 wt%), based on the total solids content of the composition (or complex). The amount of dispersant may be less than or equal to about 55 wt%, less than or equal to about 35 wt%, less than or equal to about 33 wt%, or less than or equal to about 30 wt%, based on the total solids content of the composition (or complex).

[0165] In the composition (or liquid carrier), liquid monomers comprising carbon-carbon double bonds or polymerizable (e.g., photopolymerizable) monomers (hereinafter referred to as monomers) may include (e.g., photopolymerizable) monomers containing (meth)acryloyl groups. Monomers may be precursors for insulating polymers.

[0166] Based on the total weight or total solids content of the composition, the amount of (photopolymerizable) monomer may be greater than or equal to about 0.5 wt% (e.g., greater than or equal to about 1 wt%, greater than or equal to about 2 wt%, greater than or equal to about 3 wt%, greater than or equal to about 5 wt%, or greater than or equal to about 10 wt%). Based on the total weight or total solids content of the composition, the amount of (photopolymerizable) monomer may be less than or equal to about 30 wt% (e.g., less than or equal to about 28 wt%, less than or equal to about 25 wt%, less than or equal to about 23 wt%, less than or equal to about 20 wt%, less than or equal to about 18 wt%, less than or equal to about 17 wt%, less than or equal to about 16 wt%, or less than or equal to about 15 wt%).

[0167] The (photo)initiator included in the composition can be used for the (photo)polymerization of the aforementioned monomers. An initiator is a compound that promotes a free radical reaction (e.g., free radical polymerization of monomers) by generating free radical chemicals under mild conditions (e.g., by heat or light). The initiator can be a thermal initiator or a photoinitiator. There are no particular limitations on the initiator, and it can be appropriately selected.

[0168] In the composition, the amount of initiator may be appropriately adjusted taking into account the type and amount of polymerizable monomers. In the examples, based on the total weight (or total solids content) of the composition, the amount of initiator may be greater than or equal to about 0.01 wt% (e.g., greater than or equal to about 1 wt%) and less than or equal to about 10 wt% (e.g., less than or equal to about 9 wt%, less than or equal to about 8 wt%, less than or equal to about 7 wt%, less than or equal to about 6 wt%, or less than or equal to about 5 wt%), but is not limited thereto.

[0169] The composition (or complex) may also include (polyfunctional or monofunctional) thiol compounds (or portions derived therefrom, such as portions generated by a reaction between a thiol and a carbon-carbon double bond, for example, sulfide groups), metal oxide particles, or combinations thereof having at least one thiol group at the end.

[0170] The metal oxide particles (e.g., metal oxide nanoparticles) may include TiO2, SiO2, BaTiO3, Ba2TiO4, ZnO, or combinations thereof. In the composition (or composite), based on the total solids content, the amount of metal oxide particles may be greater than or equal to about 1 wt%, greater than or equal to about 2 wt%, greater than or equal to about 3 wt%, greater than or equal to about 5 wt%, or greater than or equal to about 10 wt% and less than or equal to about 50 wt%, less than or equal to about 40 wt%, less than or equal to about 30 wt%, less than or equal to about 25 wt%, less than or equal to about 20 wt%, less than or equal to about 15 wt%, less than or equal to about 10 wt%, less than or equal to about 7 wt%, less than or equal to about 5 wt%, or less than or equal to about 3 wt%.

[0171] There is no particular limitation on the diameter of the metal oxide particles, and they can be appropriately selected. The diameter of the metal oxide particles can be greater than or equal to about 100 nm (e.g., greater than or equal to about 150 nm, or greater than or equal to about 200 nm) and less than or equal to about 1000 nm, or less than or equal to about 800 nm.

[0172] Polythiol compounds can be dithiols, trithiols, tetrathiols, or combinations thereof. For example, thiols can be ethylene glycol bis(3-mercaptopropionate), ethylene glycol dimercaptoacetate, trimethylolpropane tri(3-mercaptopropionate), pentaerythritol tetra(3-mercaptopropionate), pentaerythritol tetra(2-mercaptoacetate), 1,6-hexanedithiol, 1,3-propanedithiol, 1,2-ethylenedithiol, polyethylene glycol dithiols comprising one to ten ethylene glycol repeating units, or combinations thereof.

[0173] Based on the total solids content, the amount of thiols (or derivatives thereof) may be less than or equal to about 50 wt%, less than or equal to about 40 wt%, less than or equal to about 30 wt%, less than or equal to about 20 wt%, less than or equal to about 10 wt%, less than or equal to about 9 wt%, less than or equal to about 8 wt%, less than or equal to about 7 wt%, less than or equal to about 6 wt%, or less than or equal to about 5 wt%. Based on the total solids content, the amount of thiols (or derivatives thereof) may be greater than or equal to about 0.1 wt% (e.g., greater than or equal to about 0.5 wt%, greater than or equal to about 1 wt%, greater than or equal to about 5 wt%, greater than or equal to about 10 wt%, greater than or equal to about 15 wt%, greater than or equal to about 18 wt%, or greater than or equal to about 20 wt%).

[0174] The composition or liquid carrier may include an organic solvent. In the examples, the composition or liquid carrier may not include an organic solvent. If present, there are no particular limitations on the type of organic solvent that may be used. The type and amount of the organic solvent are suitably determined taking into account the aforementioned main components (i.e., nanoparticles, dispersants, polymerizable monomers, initiators, thiols, etc., if present) and the type and amount of other additives described herein. The composition may include the balance of solvent in addition to the desired amount of (non-volatile) solids. In the embodiments, examples of organic solvents may be: ethylene glycols, such as ethylene glycol, diethylene glycol, polyethylene glycol, etc.; glycol ether solvents, such as ethylene glycol monomethyl ether, ethylene glycol monoethyl ether, diethylene glycol monomethyl ether, ethylene glycol diethyl ether, diethylene glycol dimethyl ether, etc.; glycol ether acetate solvents, such as ethylene glycol acetate, ethylene glycol monoethyl ether acetate, diethylene glycol monoethyl ether acetate, diethylene glycol monobutyl ether acetate, etc.; propylene glycol solvents, such as propylene glycol, etc.; propylene glycol ether solvents, such as propylene glycol monomethyl ether, propylene glycol monoethyl ether, propylene glycol monopropyl ether, propylene glycol monobutyl ether, propylene glycol dimethyl ether, dipropylene glycol dimethyl ether, propylene glycol diethyl ether, dipropylene glycol diethyl ether, etc.; propylene glycol ether acetate solvents, such as propylene glycol monomethyl ether acetate, dipropylene glycol monoethyl ether acetate, etc.; amide solvents, such as... N-methylpyrrolidone, dimethylformamide, dimethylacetamide, etc.; ketone solvents, such as methyl ethyl ketone (MEK), methyl isobutyl ketone (MIBK), cyclohexanone, etc.; petroleum solvents, such as toluene, xylene, solvent naphtha, etc.; ester solvents, such as ethyl acetate, butyl acetate, ethyl lactate, ethyl 3-ethoxypropionate, etc.; ether solvents, such as diethyl ether, dipropyl ether, dibutyl ether, etc.; chloroform, C1 to C40 aliphatic hydrocarbon solvents (e.g., alkanes, alkenes, or alkynes), halogen (e.g., chlorine) substituted C1 to C40 aliphatic hydrocarbon solvents (e.g., dichloroethane, chloroform, etc.), C6 to C40 aromatic hydrocarbon solvents (e.g., toluene, xylene, etc.), halogen (e.g., chlorine) substituted C6 to C40 aromatic hydrocarbon solvents; or combinations thereof.

[0175] In addition to the foregoing components, the compositions (or complexes) of the embodiments may also include additives (such as light diffusing agents, leveling agents, coupling agents, or combinations thereof). The components included in the compositions of the embodiments (adhesives, monomers, solvents, additives, thiols, cardo adhesives, etc.) may be suitably selected, and for specific details, for example, reference may be made to US-2017-0052444-A1 (which is entirely incorporated herein by reference).

[0176] In the preparation of the composition according to the embodiments, each of the above components may be mixed sequentially or simultaneously, and there is no particular limitation on the order in which they are mixed.

[0177] The composition can be polymerized (e.g., free radical polymerization) to provide a color conversion layer (or a patterned film of the composite). The color conversion layer (or patterned film of the composite) can be manufactured using a photoresist composition. See reference. Figure 1 The method may include: forming a film of the aforementioned composition on a substrate (S1); pre-baking the film according to selection (S2); exposing selected areas of the film to light (e.g., light having a wavelength less than or equal to about 400 nm) (S3); and developing the exposed film with an alkaline developing solution to obtain a pattern of the quantum dot-polymer composite (S4).

[0178] Reference Figure 1 The aforementioned composition can be applied to a substrate to a predetermined thickness using appropriate methods (such as spin coating or slot coating) to form a film. The formed film may optionally undergo a pre-baking (PRB) step. Pre-baking can be performed by selecting appropriate conditions from known temperature, time, atmosphere, etc.

[0179] The formed (or optionally pre-baked) film can be exposed to light of a predetermined wavelength (EXP) under a mask with a predetermined pattern. The wavelength and intensity of the light can be selected taking into account factors such as the type and amount of photoinitiator, the type and amount of quantum dots, etc.

[0180] The exposed film can then be treated (e.g., dipped or sprayed) with an alkaline developing solution to dissolve the unexposed areas and obtain the desired pattern (DEV). The obtained pattern can (optionally) be post-exposure baked (POB) at a temperature of about 150°C to about 230°C for a predetermined time (e.g., greater than or equal to about 10 minutes, or greater than or equal to about 20 minutes) to improve the crack resistance and solvent resistance of the pattern (S5).

[0181] When the color conversion layer or patterned film of the nanoparticle composite has multiple repeating segments (i.e., multiple color conversion regions), each repeating segment can be formed by preparing multiple compositions including quantum dots with desired luminescent properties (such as photoluminescence peak wavelength) (e.g., quantum dots emitting red light, quantum dots emitting green light, or optionally quantum dots emitting blue light) and repeating the aforementioned patterning process multiple times (e.g., two or more times, or three or more times) as needed for each composition, thereby obtaining a nanoparticle-polymer composite with a desired pattern (S6). For example, the nanoparticle-polymer composite may have a pattern with at least two repeating color segments (e.g., RGB color segments). This nanoparticle-polymer composite pattern can be used as a photoluminescent color filter in a display device.

[0182] The color conversion layer or patterned film of the semiconductor nanoparticle composite can be manufactured using an ink composition configured to form patterns by inkjet printing. (See reference) Figure 2 Such a method may include preparing an ink composition according to embodiments, providing a substrate (e.g., a substrate having pixel regions patterned by electrodes and optionally dike or trench-type partitions), and depositing the ink composition on the substrate (or pixel regions) to form, for example, a first composite layer (or a first region). The method may also include depositing the ink composition on the substrate (or pixel regions) to form, for example, a second composite layer (or a second region). The first composite layer and the second composite layer may be a first quantum dot layer and a second quantum dot layer, respectively. The formation of the first composite layer and the formation of the second composite layer may be performed simultaneously or sequentially.

[0183] The deposition of the ink composition can be performed using a suitable liquid crystal emitter (e.g., an inkjet printing system or a nozzle printing system with an ink reservoir and at least one printhead). The deposited ink composition can be used to provide a (first or second) composite layer via solvent removal and polymerization under heating. This method can provide high-precision nanoparticle-polymer composite films or patterned films in a short time using a simple approach.

[0184] In the nanoparticle-polymer composites (e.g., the first composite) of the embodiments, the (polymer) matrix may include the components described herein with respect to the composition. In the composite, based on the total weight of the composite, the amount of matrix may be greater than or equal to about 10 wt%, greater than or equal to about 20 wt%, greater than or equal to about 30 wt%, greater than or equal to about 40 wt%, greater than or equal to about 50 wt%, or greater than or equal to about 60 wt%. Based on the total weight of the composite, the amount of matrix may be less than or equal to about 95 wt%, less than or equal to about 90 wt%, less than or equal to about 80 wt%, less than or equal to about 70 wt%, less than or equal to about 60 wt%, or less than or equal to about 50 wt%.

[0185] The (polymer) matrix may include: a dispersant (e.g., an adhesive polymer comprising a carboxylic acid group), a polymeric product containing (at least one, e.g., at least two, at least three, at least four, or at least five) carbon-carbon double bonds (e.g., an insulating polymer), a polymeric product of a polymeric monomer and (e.g., at the end) a polythiol compound having at least two thiol groups, or a combination thereof. The matrix may include linear polymers, crosslinked polymers, or a combination thereof. The (polymer) matrix may not include conjugated polymers (conjugated polymers other than cardo resins). The matrix may include conjugated polymers.

[0186] Crosslinked polymers may include: thiol-olefin resins, crosslinked poly(meth)acrylates, crosslinked polyurethanes, crosslinked epoxy resins, crosslinked vinyl polymers, crosslinked silicone resins, or combinations thereof. In embodiments, the crosslinked polymer may be a polymer of the aforementioned polymerizable monomers and optional polythiol compounds.

[0187] Linear polymers may include repeating units derived from carbon-carbon unsaturated bonds (e.g., carbon-carbon double bonds). Repeating units may include carboxylic acid groups. Linear polymers may include ethylene repeating units.

[0188] Repeating units containing carboxylic acid groups may include units derived from monomers containing carboxylic acid groups and carbon-carbon double bonds, units derived from monomers having dianhydride moieties, or combinations thereof.

[0189] The (polymer) matrix may include compounds containing carboxylic acid groups (e.g., adhesives, adhesive polymers, or dispersants) (e.g., for the dispersion of nanoparticles or adhesives).

[0190] The first composite (or its film or pattern) may have a thickness of, for example, less than or equal to about 30 micrometers (μm), less than or equal to about 25 μm, less than or equal to about 20 μm, less than or equal to about 15 μm, less than or equal to about 10 μm, less than or equal to about 8 μm, or less than or equal to about 7 μm to greater than about 2 μm (e.g., greater than or equal to about 3 μm, greater than or equal to about 3.5 μm, greater than or equal to about 4 μm, greater than or equal to about 5 μm, greater than or equal to about 6 μm, greater than or equal to about 7 μm, greater than or equal to about 8 μm, greater than or equal to about 9 μm, or greater than or equal to about 10 μm).

[0191] The semiconductor nanocrystals or nanoparticles including semiconductor nanocrystals (hereinafter referred to as quantum dots or semiconductor nanoparticles), composites (patterns) including them, or color conversion panels including them described herein may be included in electronic devices. Such electronic devices may include: display devices, light-emitting diodes (LEDs), organic light-emitting diodes (OLEDs), quantum dot LEDs, sensors, solar cells, imaging sensors, photodetectors, or liquid crystal display devices, but embodiments are not limited thereto. The aforementioned quantum dots (or semiconductor nanoparticles) in the embodiments may be included in electronic devices. Such electronic devices may include, but are not limited to, virtual reality devices, augmented reality devices, portable terminal devices, monitors, laptop personal computers (PCs), televisions, electronic signal boards, electronic display boards, cameras, vehicles (e.g., automobiles), etc., but embodiments are not limited thereto. Electronic devices may be portable terminal devices, monitors, laptop personal computers, or televisions that include display devices (or light-emitting devices) containing quantum dots. Electronic devices may be cameras or mobile terminal devices that include image sensors containing quantum dots. Electronic devices may be cameras or vehicles that include photodetectors containing quantum dots.

[0192] Embodiments provide a color conversion layer (e.g., a color conversion structure or a color conversion panel) including color conversion regions comprising semiconductor nanoparticles described herein. The color conversion panel may include a color conversion layer comprising color conversion regions and optional partitions defining each region of the color conversion layer. The color conversion regions may include a first region corresponding to a first pixel, and the first region may include semiconductor nanoparticles or semiconductor nanoparticle composites. In the color conversion panel of the embodiments, the semiconductor nanoparticle composite may be in the form of a patterned film. In another embodiment, the semiconductor nanoparticle composite may be in the form of a sheet.

[0193] The first region may include a first composite, and the first composite may include a matrix and semiconductor nanoparticles dispersed in the matrix and may be configured to emit first light. Embodiments provide semiconductor nanoparticles or groups of semiconductor nanoparticles.

[0194] The color conversion layer (e.g., color conversion structure) may include a semiconductor nanoparticle composite or a patterned film of a semiconductor nanoparticle composite according to embodiments. Figure 3A This is a schematic cross-sectional view of a color conversion panel according to an embodiment. (Refer to...) Figure 3A The color conversion panel may optionally further include partition walls (e.g., black matrix (BM), dike, or a combination thereof) that define each region of the color conversion layer (e.g., color conversion structure). Figure 3BAn electronic device (or display device) including a color conversion panel and a light source is shown according to another embodiment. In the electronic device of the embodiment, the color conversion panel, including a color conversion layer or color conversion structure, may be disposed on an on-chip LED (e.g., a micro on-chip LED). See also... Figure 3B A circuit configured to drive a light source (e.g., a Si driver integrated circuit (IC)) may be disposed below a light source (e.g., a blue LED) configured to emit incident light (e.g., blue light). The color conversion layer may include a first composite containing semiconductor nanoparticles emitting a first light (e.g., green light) and a second composite containing semiconductor nanoparticles emitting a second light (e.g., red light) or a third composite emitting a third light (e.g., incident light or blue light) or allowing the third light (e.g., incident light or blue light) to pass through. Partition walls (PWs) (e.g., partition walls comprising inorganic materials (such as silicon or silicon oxide) or partition walls based on organic materials) may be disposed between the respective composites. Partition walls may include trench holes, via holes, or combinations thereof. A first optical element (e.g., an absorptive color filter) may be disposed on the light extraction surface of the color conversion layer. Additional optical elements (e.g., microlenses) may be further disposed on the first optical element.

[0195] The color conversion region may include a first region configured to (e.g., by illumination with incident light) emit the aforementioned first light (or green light). In an embodiment, the first region may correspond to a green pixel. The first region may include a first composite material (e.g., a light-emitting composite material). The first light may have a peak emission wavelength within the wavelength range described later. The first light will be described in more detail with respect to the semiconductor nanoparticles described herein. The peak emission wavelength of the green light may be greater than or equal to about 500 nm, greater than or equal to about 501 nm, greater than or equal to about 504 nm, greater than or equal to about 505 nm, or greater than or equal to about 520 nm. The peak emission wavelength of the green light may be less than or equal to about 580 nm, less than or equal to about 560 nm, less than or equal to about 550 nm, less than or equal to about 530 nm, less than or equal to about 525 nm, less than or equal to about 520 nm, less than or equal to about 515 nm, or less than or equal to about 510 nm.

[0196] The color conversion region may also include (e.g., one or more) a second region configured to (e.g., by irradiation with excitation light) emit a second light (e.g., red light) different from the first light. The second region may include a second composite. The semiconductor nanoparticle composite in the second region may include semiconductor nanoparticles (e.g., quantum dots) configured to emit light of a different wavelength (e.g., a different color) than the semiconductor nanoparticle composite disposed in the first region.

[0197] The second light may be red light having a peak emission wavelength of about 600 nm to about 650 nm (e.g., about 620 nm to about 650 nm). The color conversion panel may also include one or more third regions that emit or allow third light (e.g., blue light) that is different from the first and second light. The incident light may include the third light (e.g., blue light and optionally green light). The third light may include blue light having a peak emission wavelength of greater than or equal to about 380 nm (e.g., greater than or equal to about 440 nm, greater than or equal to about 445 nm, greater than or equal to about 450 nm, or greater than or equal to about 455 nm) to less than or equal to about 480 nm (e.g., less than or equal to about 475 nm, less than or equal to about 470 nm, less than or equal to about 465 nm, or less than or equal to about 460 nm).

[0198] In embodiments, the color conversion panel or color conversion layer may include a plurality of first regions, and the semiconductor nanoparticle composite may be configured into predetermined patterns to be disposed in the first regions of the color conversion panel. The semiconductor nanoparticle composite (or its pattern) may be prepared from the (ink) composition by any method, such as photolithography or inkjet printing. Therefore, embodiments may relate to compositions comprising semiconductor nanoparticles as described in further detail herein.

[0199] In embodiments, the electronic device or display device (e.g., a display panel) may further include a color conversion layer (or color conversion panel) and an optional light source. The light source can provide incident light to the color conversion layer or color conversion panel. In embodiments, the display panel may include a light-emitting panel (or light source), the aforementioned color conversion panel, and a light-transmitting layer located between the aforementioned light-emitting panel and the aforementioned color conversion panel. The color conversion panel may include a substrate, and the color conversion layer may be disposed on the substrate.

[0200] When present, a light source or emitting panel can provide incident light to a color conversion layer or color conversion panel. The incident light may have a peak emission wavelength greater than or equal to about 440 nm (e.g., greater than or equal to about 450 nm) and less than or equal to about 580 nm (e.g., less than or equal to about 480 nm, less than or equal to about 470 nm, or less than or equal to about 460 nm).

[0201] In embodiments, the electronic device (e.g., a photoluminescent device) may also include a sheet of nanoparticle composite. See also... Figure 4BThe device 400 may include a backlight unit 410 and a liquid crystal panel 420. Optionally, the backlight unit 410 may include a quantum dot polymer composite sheet (QD sheet). For example, the backlight unit 410 may have a stackable structure of reflectors, light guide plates (LGP), light sources (blue LEDs, etc.), quantum dot polymer composite sheets (QD sheets), and optical films (prisms, dual brightness enhancement films (DBEFs, etc.)). The liquid crystal panel 420 may be disposed on the backlight unit 410 and has the following structure: thin-film transistors (TFTs), liquid crystals (LCs), and color filters are included between two polarizers (Pols). The quantum dot polymer composite sheet (QD sheet) may include semiconductor nanoparticles (e.g., quantum dots) that emit red and green light after absorbing light from the light source. Blue light provided from the light source can be combined with red and green light emitted from the corresponding semiconductor nanoparticles while passing through the quantum dot polymer composite sheet and converted into white light. This white light can be separated into blue, green, and red light by a color filter in the liquid crystal panel and then emitted to the outside for each pixel. (See reference...) Figure 4D The backlight unit (BLU) can be a direct-type BLU without a light guide plate, and may include multiple LEDs (e.g., mini LEDs) and a light conversion sheet or QD sheet may be disposed on the BLU.

[0202] A color conversion panel may include a substrate, and a color conversion layer may be disposed on the substrate. The color conversion layer or color conversion panel may include a patterned film of a nanoparticle composite. The patterned film may include repeating segments configured to emit light of a desired wavelength. The repeating segments may include a second region. The second region may be a segment emitting red light. The repeating segments may include a first region. The first region may be a segment emitting green light. The repeating segments may include a third region. The third region may include a segment emitting or transmitting blue light. Details of the first, second, and third regions are described herein.

[0203] The light-emitting panel or light source can be an element that emits incident light (e.g., excitation light). The incident light may include blue light and optionally green light. The light source may include an LED. The light source may include an organic LED (OLED). The light source may include a micro LED. On the front surfaces (light-emitting surfaces) of the first and second regions, optical elements (e.g., a blue light (and optionally green light) blocking layer or a first optical filter, which will be described herein, may be disposed for blocking (e.g., reflecting or absorbing) blue light (and optionally green light). In an embodiment, the light source may include an organic light-emitting diode that emits blue light and an organic light-emitting diode that emits green light, and a green light removal filter may be further disposed on a third region through which blue light is transmitted.

[0204] The light-emitting panel or light source may include a plurality of light-emitting units corresponding to the first region and the second region, respectively, and the light-emitting units may include a first electrode and a second electrode facing each other, and an (organic) electroluminescent layer located between the first electrode and the second electrode. The electroluminescent layer may include organic light-emitting materials. For example, each light-emitting unit of the light source may include an electroluminescent device (e.g., an organic light-emitting diode (OLED)) configured to emit light of a predetermined wavelength (e.g., blue light, green light, or a combination thereof). There are no particular limitations on the structure and materials of the electroluminescent device and the organic light-emitting diode (OLED).

[0205] The display panel and color conversion panel will be described in further detail below with reference to the accompanying drawings.

[0206] Reference Figure 4A and Figure 4C The display panel 1000 according to an embodiment may include a light-emitting panel 40 and a color conversion panel 50. The display panel or electronic device may also include a light-transmitting layer 60 disposed between the light-emitting panel 40 and the color conversion panel 50, and an adhesive material 70 for bonding the light-emitting panel 40 and the color conversion panel 50. The light-transmitting layer may include a passivation layer, a filler material, an encapsulation layer, or a combination thereof (not shown). The material used for the light-transmitting layer may be suitably selected without particular limitation. The material used for the light-transmitting layer may be an inorganic material, an organic material, an organic / inorganic hybrid material, or a combination thereof.

[0207] The light-emitting panel 40 and the color-converting panel 50 may each have surfaces facing each other (i.e., the two respective panels may face each other), and a light-transmitting layer (or light-transmitting panel) 60 is disposed between the two panels. The color-converting panel 50 may be disposed in a direction such that light emitted from, for example, the light-emitting panel 40 may illuminate the light-transmitting layer 60. An adhesive material 70 may be disposed along the edges of the light-emitting panel 40 and the color-converting panel 50, and may be, for example, a sealing material.

[0208] Figure 5A This is a plan view of an embodiment of the pixel arrangement of a display panel. (Refer to...) Figure 5A The display panel 1000 may include a display area 1000D for displaying images and a non-display area 1000P located in the peripheral area of ​​the display area 1000D and provided with adhesive material.

[0209] Display area 1000D may include a plurality of pixels PX arranged along rows (e.g., the x-direction) and columns (e.g., the y-direction), and each representative pixel PX may include a plurality of sub-pixels PX1, PX2, and PX3 that express (e.g., display) different colors from each other. An embodiment may be idealized to have a structure in which three sub-pixels PX1, PX2, and PX3 are configured to provide a pixel. Embodiments may also include additional sub-pixels (such as white sub-pixels) and may also include sub-pixels that express (e.g., display) the same color (e.g., at least one). The plurality of pixels PX may be aligned, for example, in a Bayer matrix, a matrix sold under the trade name PenTile, a diamond matrix, or a combination thereof.

[0210] Subpixels PX1, PX2, and PX3 can express (e.g., display) the colors of the three primary colors or combinations of the three primary colors (e.g., can express (e.g., display) red, green, blue, or combinations thereof). For example, the first subpixel PX1 can express (e.g., display) red, the second subpixel PX2 can express (e.g., display) green, and the third subpixel PX3 can express (e.g., display) blue.

[0211] In the accompanying drawings, all subpixels are idealized to have the same size, but this is not a limitation, and at least one subpixel may be larger or smaller than the others. In the accompanying drawings, all subpixels are idealized to have the same shape, but this is not a limitation, and at least one subpixel may have a different shape than the others.

[0212] In a display panel or electronic device according to an embodiment, the light-emitting panel may include a substrate and TFTs (e.g., oxide-containing TFTs) disposed on the substrate. Light-emitting devices (e.g., light-emitting devices having a cascade structure, etc.) may be disposed on the TFTs.

[0213] The light-emitting device may include a light-emitting layer (e.g., a blue light-emitting layer, a green light-emitting layer, or a combination thereof) located between a first electrode and a second electrode facing each other. A charge-generating layer may be disposed between each of the light-emitting layers. Each of the first and second electrodes may be patterned as a plurality of electrode elements to correspond to a pixel. The first electrode may be an anode or a cathode. The second electrode may be a cathode or an anode.

[0214] Light-emitting devices may include organic LEDs, nanorod LEDs, mini LEDs, micro LEDs, or combinations thereof.

[0215] Figures 5B to 5EThese are cross-sectional views illustrating the light-emitting devices of the embodiments. In the embodiments, the "mini LED" may have dimensions greater than or equal to about 100 micrometers, greater than or equal to about 150 micrometers, or greater than or equal to about 200 micrometers and less than or equal to about 1 millimeter, less than or equal to about 0.5 millimeters, less than or equal to about 0.15 millimeters, or less than or equal to about 0.12 millimeters, but is not limited thereto. In the embodiments, the "micro LED" may have dimensions less than about 100 micrometers, less than or equal to about 50 micrometers, or less than or equal to about 10 micrometers. The dimensions of the micro LED may be greater than or equal to about 0.1 micrometers, greater than or equal to about 0.5 micrometers, greater than or equal to about 1 micrometer, or greater than or equal to about 5 micrometers, but is not limited thereto.

[0216] Reference Figure 5B The light-emitting device 180 may include: a first electrode 181 and a second electrode 182 facing each other; a light-emitting layer 183 located between the first electrode 181 and the second electrode 182; and optionally, auxiliary layers 184 and 185 located between the first electrode 181 and the light-emitting layer 183 and between the second electrode 182 and the light-emitting layer 183, respectively.

[0217] The first electrode 181 and the second electrode 182 may be configured to face each other along the thickness direction (e.g., the z-direction), and either the first electrode 181 or the second electrode 182 may be an anode and the other may be a cathode. The first electrode 181 may be a light-transmitting electrode, a semi-transparent electrode, or a reflective electrode, and the second electrode 182 may be a light-transmitting electrode or a semi-transparent electrode. The light-transmitting electrode or the semi-transparent electrode may be made, for example, of a thin monolayer or multiple layers of a metal thin film, including: conductive metal oxides, such as indium tin oxide (ITO), indium zinc oxide (IZO), zinc oxide (ZnO), tin oxide (SnO), aluminum tin oxide (AlTO), fluorine-doped tin oxide (FTO), etc.; or silver (Ag), copper (Cu), aluminum (Al), magnesium (Mg), magnesium-silver (Mg-Ag), magnesium-aluminum (Mg-Al), or combinations thereof. The reflective electrode may include metal, metal nitride, or a combination thereof, such as silver (Ag), copper (Cu), aluminum (Al), gold (Au), titanium (Ti), chromium (Cr), nickel (Ni), alloys thereof, nitrides thereof (e.g., TiN), or a combination thereof, but the embodiments are not limited thereto.

[0218] One or more light-emitting layers 183 may include a first light emitter that emits light with a blue emission spectrum, a second light emitter that emits light with a green emission spectrum, or a combination thereof.

[0219] The blue emission spectrum may have a peak emission wavelength in the wavelength region greater than or equal to about 400 nm to less than about 500 nm (and within this range, in the wavelength regions of about 410 nm to about 490 nm, about 420 nm to about 480 nm, about 430 nm to about 470 nm, about 440 nm to about 465 nm, about 445 nm to about 460 nm, or about 450 nm to about 458 nm).

[0220] Green emission spectra may have peak emission wavelengths in the wavelength region greater than or equal to about 500 nm to less than about 590 nm (and within this range, in the wavelength regions of about 510 nm to about 580 nm, about 515 nm to about 570 nm, about 520 nm to about 560 nm, about 525 nm to about 555 nm, about 530 nm to about 550 nm, or about 535 nm to about 545 nm).

[0221] For example, the light-emitting layer 183 or the light-emitting body included in the light-emitting layer 183 may include phosphorescent materials, fluorescent materials, or combinations thereof. For example, the light-emitting body may include an organic light-emitting body, wherein the organic light-emitting body may be a low-molecular-weight compound, a high-molecular-weight compound, or a combination thereof. There are no particular limitations on the specific types of phosphorescent and fluorescent materials, but they may be suitably selected from known materials. For example, the light-emitting body may include an inorganic light-emitting body, and the inorganic light-emitting body may be an inorganic semiconductor, quantum dot, perovskite, or a combination thereof. Inorganic semiconductors may include metal nitrides, metal oxides, or combinations thereof. Metal nitrides, metal oxides, or combinations thereof may include group III metals (such as aluminum, gallium, indium, thallium, etc.), group IV metals (such as silicon, germanium, tin), or combinations thereof. In embodiments, the light-emitting body may include an inorganic light-emitting body, and the light-emitting device 180 may be a quantum dot light-emitting diode, a perovskite light-emitting diode, or a micro-LED. Materials available as inorganic light-emitting bodies may be suitably selected.

[0222] In an embodiment, the light-emitting device 180 may further include auxiliary layers 184 and 185. Auxiliary layers 184 and 185 may be disposed between the first electrode 181 and the light-emitting layer 183, and between the second electrode 182 and the light-emitting layer 183, respectively. Auxiliary layers 184 and 185 may be charge-assisted layers for controlling charge injection and / or mobility. Auxiliary layers 184 and 185 may include at least one or two layers, and for example, may include a hole injection layer, a hole transport layer, an electron blocking layer, an electron injection layer, an electron transport layer, a hole blocking layer, or a combination thereof. At least one of auxiliary layers 184 and 185 may be omitted if desired. The auxiliary layers may be formed of a material suitably selected from materials known for use in organic electroluminescent devices, etc.

[0223] The light-emitting devices 180 disposed in each of sub-pixels PX1, PX2, and PX3 may be the same or different from each other. The light-emitting devices 180 in each of sub-pixels PX1, PX2, and PX3 may emit light with the same or different emission spectra. The light-emitting devices 180 in each of sub-pixels PX1, PX2, and PX3 may emit light, for example, light with a blue emission spectrum, light with a green emission spectrum, or a combination thereof. The light-emitting devices 180 in each of sub-pixels PX1, PX2, and PX3 may be separated by a pixel-defining layer (not shown).

[0224] Reference Figure 5C The light-emitting device 180 may be a light-emitting device with a cascaded structure and may include: a first electrode 181 and a second electrode 182 facing each other; a first light-emitting layer 183a and a second light-emitting layer 183b located between the first electrode 181 and the second electrode 182; a charge-generating layer 186 located between the first light-emitting layer 183a and the second light-emitting layer 183b; and optionally, auxiliary layers 184 and / or 185 located between the first electrode 181 and the first light-emitting layer 183a and / or between the second electrode 182 and the second light-emitting layer 183b, respectively.

[0225] Details of the first electrode 181, the second electrode 182, and the auxiliary layers 184 and 185 are described herein.

[0226] The first light-emitting layer 183a and the second light-emitting layer 183b can emit light with the same or different emission spectra. In an embodiment, the first light-emitting layer 183a or the second light-emitting layer 183b can emit light with a blue emission spectrum or light with a green emission spectrum, respectively. The charge-generating layer 186 can inject charge into the first light-emitting layer 183a and / or the second light-emitting layer 183b, and can control the charge balance between the first light-emitting layer 183a and the second light-emitting layer 183b. The charge-generating layer 186 may include, for example, an n-type layer and a p-type layer, and may include, for example, an electron transport material and / or a hole transport material including n-type dopants and / or p-type dopants. The charge-generating layer 186 may include one layer or two or more layers.

[0227] Reference Figure 5DThe light-emitting device (with a cascaded structure) may include: a first electrode 181 and a second electrode 182 facing each other; a first light-emitting layer 183a, a second light-emitting layer 183b and a third light-emitting layer 183c located between the first electrode 181 and the second electrode 182; a first charge-generating layer 186a located between the first light-emitting layer 183a and the second light-emitting layer 183b; a second charge-generating layer 186b located between the second light-emitting layer 183b and the third light-emitting layer 183c; and optionally, auxiliary layers 184 and / or 185 located between the first electrode 181 and the first light-emitting layer 183a and / or between the second electrode 182 and the third light-emitting layer 183c, respectively.

[0228] Details of the first electrode 181, the second electrode 182, and the auxiliary layers 184 and 185 are described herein.

[0229] The first light-emitting layer 183a, the second light-emitting layer 183b, and the third light-emitting layer 183c can emit light with the same or different emission spectra. The first light-emitting layer 183a, the second light-emitting layer 183b, and the third light-emitting layer 183c can emit blue light. In one embodiment, the first light-emitting layer 183a and the third light-emitting layer 183c can emit light with a blue emission spectrum, and the second light-emitting layer 183b can emit light with a green emission spectrum. In another embodiment, the first light-emitting layer 183a and the third light-emitting layer 183c can emit light with a green emission spectrum, and the second light-emitting layer 183b can emit light with a blue emission spectrum.

[0230] The first charge generating layer 186a can inject charge into the first light-emitting layer 183a and / or the second light-emitting layer 183b, and can control the charge balance between the first light-emitting layer 183a and the second light-emitting layer 183b. The second charge generating layer 186b can inject charge into the second light-emitting layer 183b and / or the third light-emitting layer 183c, and can control the charge balance between the second light-emitting layer 183b and the third light-emitting layer 183c. Each of the first charge generating layer 186a and the second charge generating layer 186b may each include one layer or two or more layers.

[0231] Reference Figure 5E In an embodiment, the light-emitting device 180 may include a light-emitting layer 183, a first electrode 181, a second electrode 182, and a plurality of nanostructures 187 disposed in the light-emitting layer 183.

[0232] One of the first electrode 181 and the second electrode 182 can be an anode and the other can be a cathode. The first electrode 181 and the second electrode 182 can be electrodes patterned according to the orientation of the arrangement of the plurality of nanostructures 187, and can include, for example: conductive oxides, such as indium tin oxide (ITO), indium zinc oxide (IZO), zinc oxide (ZnO), tin oxide (SnO), aluminum tin oxide (AlTO), fluorine-doped tin oxide (FTO), etc.; or silver (Ag), copper (Cu), aluminum (Al), gold (Au), titanium (Ti), chromium (Cr), nickel (Ni), their alloys, their nitrides (e.g., TiN); or combinations thereof, but the embodiments are not limited thereto.

[0233] The light-emitting layer 183 may include a plurality of nanostructures 187, and each of the sub-pixels PX1, PX2, and PX3 may include a plurality of nanostructures 187. In one embodiment, the plurality of nanostructures 187 may be arranged in one direction, but the embodiment is not limited thereto. The nanostructures 187 may be compound-containing semiconductors configured to emit light of a predetermined wavelength, for example, by the application of an electric current, and may be, for example, linear nanostructures (such as nanorods or nanoneedles). The diameter or long diameter of the nanostructure 187 can be, for example, a few nanometers to several hundred nanometers, and the aspect ratio (or length-to-width ratio) of the nanostructure 187 can be greater than about 1, greater than or equal to about 1.5, greater than or equal to about 2.0, greater than or equal to about 3.0, greater than or equal to about 4.0, greater than or equal to about 4.5, or greater than or equal to about 5.0 to less than or equal to about 20 (e.g., greater than about 1 to about 20, greater than or equal to about 1.5 to about 20, greater than or equal to about 2.0 to about 20, greater than or equal to about 3.0 to about 20, greater than or equal to about 4.0 to about 20, greater than or equal to about 4.5 to about 20, or greater than or equal to about 5.0 to about 20).

[0234] Each of the nanostructures 187 may include a p-type region 187p, an n-type region 187n, and a multiple quantum well region 187i, and may be configured to emit light from the multiple quantum well region 187i. The nanostructures 187 may include, for example, gallium nitride (GaN), indium gallium nitride (InGaN), aluminum gallium nitride (AlGaN), or combinations thereof, and may have, for example, a core-shell structure.

[0235] Each of the multiple nanostructures 187 can emit light having the same or different emission spectra. In an embodiment, the nanostructures can emit light with a blue emission spectrum (e.g., light with a blue emission spectrum having a peak emission wavelength in the wavelength region of about 400 nm to less than 500 nm, about 410 nm to about 490 nm, or about 420 nm to about 480 nm).

[0236] Figure 6This is a schematic cross-sectional view of the device (or display panel) according to an embodiment. (Refer to...) Figure 6 The light source (or light-emitting panel) may include an organic light-emitting diode (OLED) that emits blue light (B) (and optionally green light (G)). The OLED may include at least two pixel electrodes 90a, 90b, 90c formed on a substrate 100, pixel defining layers 150a, 150b formed between adjacent pixel electrodes 90a, 90b, 90c, organic light-emitting layers 140a, 140b, 140c formed on each pixel electrode 90a, 90b, 90c, and a common electrode layer 130 formed on the organic light-emitting layers 140a, 140b, 140c. Thin-film transistors (TFTs) and a substrate (not shown) may be disposed below the OLED. The pixel regions of the OLED may be configured to correspond to the first, second, and third regions described herein. In embodiments, the color conversion panel and the light-emitting panel may be as follows: Figure 6 The separation is shown in the figure. In an embodiment, the color conversion panel can be directly stacked on the light-emitting panel.

[0237] A stacked structure comprising a semiconductor nanoparticle composite pattern 170 (e.g., a first region 11 or R comprising semiconductor nanoparticles emitting red light, a second region 21 or G comprising semiconductor nanoparticles emitting green light, and a third region 31 or B comprising or excluding semiconductor nanoparticles (e.g., semiconductor nanoparticles emitting blue light)) and a substrate 240 may be disposed on a light source. Blue light emitted from the light source may enter the first and second regions and may emit red and green light, respectively. Blue light emitted from the light source may pass through the third region. If desired, an element configured to block excitation light (a first optical filter 160 or an excitation light blocking layer) may be disposed between the semiconductor nanoparticle composite layers R and G and the substrate. In an embodiment, the excitation light may include blue and green light, and a green light blocking filter (not shown) may be added to the third region. The first optical filter or excitation light blocking layer will be described in more detail here.

[0238] Such a display device can be manufactured by separately fabricating the aforementioned stacked structure and the LED or OLED (e.g., a blue light-emitting LED or OLED), and then combining the stacked structure and the LED or OLED. The display device can also be manufactured by directly forming a semiconductor nanoparticle composite pattern on the LED or OLED.

[0239] In color conversion panels or display devices, the substrate can be a substrate comprising an insulating material. The substrate may include: glass; polymers such as polyethylene terephthalate (PET), polyethylene naphthalate (PEN), polyesters, polycarbonates, or polyacrylates; polysiloxanes (e.g., polydimethylsiloxane (PDMS); inorganic materials such as Al₂O₃, ZnO, etc.; or combinations thereof, but the embodiments are not limited thereto. The thickness of the substrate may be suitably selected taking into account the substrate material, but is not particularly limited thereto. The substrate may be flexible. For light emitted from semiconductor nanoparticles, the substrate may have a transmittance greater than or equal to about 50%, greater than or equal to about 60%, greater than or equal to about 70%, greater than or equal to about 80%, or greater than or equal to about 90%.

[0240] A wiring layer, including thin-film transistors, can be formed on the substrate. The wiring layer may also include gate lines, sustaining voltage lines, a gate insulating film, data lines, source electrodes, drain electrodes, a semiconductor layer, a protective layer, etc. The detailed structure of the wiring layer may vary depending on the embodiment. The gate lines and sustaining voltage lines may be electrically isolated from each other, and the data lines may be insulated and intersect with the gate lines and sustaining voltage lines. The gate electrode, source electrode, and drain electrode may respectively form the control terminal, input terminal, and output terminal of the thin-film transistor. The drain electrode may be electrically connected to the pixel electrode, which will be described herein.

[0241] Pixel electrodes can be used as electrodes (e.g., anodes) in display devices. Pixel electrodes can be formed from transparent conductive materials such as indium tin oxide (ITO) or indium zinc oxide (IZO). Pixel electrodes can also be formed from materials with light-blocking properties such as gold (Au), platinum (Pt), nickel (Ni), tungsten (W), chromium (Cr), molybdenum (Mo), iron (Fe), cobalt (Co), copper (Cu), palladium (Pd), or titanium (Ti). Pixel electrodes can have a two-layer structure in which transparent conductive materials and light-blocking materials are sequentially stacked.

[0242] Between two adjacent pixel electrodes, a pixel defining layer (PDL) may be stacked on the end of the pixel electrode to divide the pixel electrode into pixel units. The pixel defining layer is an insulating layer that provides resistive isolation between at least two pixel electrodes.

[0243] A pixel defining layer may cover a portion of the upper surface of the pixel electrode, and the remaining area of ​​the pixel electrode not covered by the pixel defining layer may provide an opening. An organic light-emitting layer, which will be described herein, may be formed on the area defined by the opening.

[0244] The organic light-emitting layer can define each pixel region by the aforementioned pixel electrode and pixel defining layer. In other words, a pixel region can be defined as a region in which an organic light-emitting unit layer is formed, which is in contact with a pixel electrode defined by the pixel defining layer. In the display device according to the embodiment, the organic light-emitting layer can be defined as a first pixel region, a second pixel region, and a third pixel region, and each pixel region can be spaced apart from each other by the pixel defining layer with a predetermined interval.

[0245] In embodiments, the organic light-emitting layer may emit a third light belonging to either the visible light region or the ultraviolet (UV) light region. Each of the first to third pixel regions of the organic light-emitting layer may emit the third light. In embodiments, the third light may be light with higher energy in the visible light region, and may be, for example, blue light (and optionally green light). In embodiments, all pixel regions of the organic light-emitting layer may be designed to emit the same light, and each pixel region of the organic light-emitting layer may be formed of the same or similar materials, or may exhibit the same or similar properties. Therefore, the process for forming the organic light-emitting layer can be simplified, and the display device can be easily applied to large-scale / large-area processes (e.g., manufactured by large-scale / large-area processes). However, the organic light-emitting layer according to embodiments is not necessarily limited thereto, but the organic light-emitting layer may be designed to emit at least two different lights (e.g., at least two different colors of light).

[0246] The organic light-emitting layer may include an organic light-emitting unit layer in each pixel region, and each organic light-emitting unit layer may include auxiliary layers (e.g., hole injection layer, hole transport layer, electron transport layer, etc.) in addition to the light-emitting layer.

[0247] The common electrode can be used as the cathode of a display device. The common electrode can be formed from a transparent conductive material, such as indium tin oxide (ITO) or indium zinc oxide (IZO). The common electrode can be formed on and integrated with the organic light-emitting layer.

[0248] A planarization layer or passivation layer (not shown) may be formed on the common electrode. The planarization layer may include an insulating material (e.g., transparent) to ensure electrical insulation from the common electrode.

[0249] In an embodiment, the display device may further include a lower substrate, a polarizing plate disposed below the lower substrate, and a liquid crystal layer disposed between the laminated structure and the lower substrate, wherein in the laminated structure, a photoluminescent layer (i.e., an emissive layer) may be configured to face the liquid crystal layer. The display device may also include a polarizing plate located between the liquid crystal layer and the emissive layer. The light source may further include an LED and a light guide plate (if desired).

[0250] In the embodiments, a display device (e.g., a liquid crystal display device) is shown with reference to the accompanying drawings. Figure 7This is a schematic cross-sectional view showing a liquid crystal display device according to an embodiment. (Refer to...) Figure 7 The display device in the embodiment may include a liquid crystal panel 200, a polarizing plate 300 disposed below the liquid crystal panel 200, and a backlight unit disposed below the polarizing plate 300.

[0251] The liquid crystal panel 200 may include a lower substrate 210, a stacked structure, and a liquid crystal layer 220 disposed between the stacked structure and the lower substrate. The stacked structure may include a transparent substrate 240, a first optical filter layer 310, a photoluminescent layer 230 containing a pattern of semiconductor nanoparticle-polymer composite, and a second optical filter layer 311.

[0252] The lower substrate 210 (also referred to as the array substrate) may be a transparent insulating material substrate. The substrate may be as described herein. A wiring board 211 may be disposed on the upper surface of the lower substrate 210. The wiring board 211 may include a plurality of gate lines (not shown) and data lines (not shown) defining pixel regions, thin-film transistors positioned adjacent to the intersection regions of the gate lines and data lines, and pixel electrodes for each pixel region, but embodiments are not limited thereto. The details of such a wiring board are not particularly limited.

[0253] The liquid crystal layer 220 may be disposed on the wiring board 211. The liquid crystal panel 200 may include alignment layers 221 above and below the liquid crystal layer 220, the alignment layers 221 being used to initially align the liquid crystal material included in the liquid crystal layer 220. The details of the liquid crystal layer and the alignment layer (e.g., liquid crystal material, alignment layer material, method of forming the liquid crystal layer, thickness of the liquid crystal layer, etc.) are not particularly limited.

[0254] The polarizer 300 may be disposed below the lower substrate. The material and structure of the polarizer 300 are not particularly limited. For example, a backlight unit (e.g., emitting blue light) may be disposed below the polarizer 300. The upper optical element or polarizer 300 may be disposed between the liquid crystal layer 220 and the transparent substrate 240, but is not limited thereto. For example, the upper polarizer may be disposed between the liquid crystal layer 220 and the photoluminescent layer 230. The polarizer can be any polarizer that can be used in a liquid crystal display device. The polarizer may be triacetyl cellulose (TAC) with a thickness of less than or equal to about 200 μm, but is not limited thereto. In another embodiment, the upper optical element may be a coating that controls the refractive index but does not have a polarization function.

[0255] The backlight unit may include a light source 110. The light source may emit blue light or white light. The light source may include (but is not limited to) a blue LED, a white LED, a white OLED, or a combination thereof.

[0256] The backlight unit may also include a light guide plate 120. In embodiments, the backlight unit may be edge-mounted. For example, the backlight unit may include a reflector (not shown), a light guide plate (not shown) disposed on the reflector and providing a planar light source to the liquid crystal panel 200, and / or at least one optical sheet (not shown) (e.g., a diffuser, prism sheet, etc.) on the light guide plate, but this disclosure is not limited thereto. The backlight unit may not include a light guide plate. In embodiments, the backlight unit may be direct-illuminated. For example, the backlight unit may have a reflector (not shown) and a plurality of fluorescent lamps located at regular intervals on the reflector, or it may have an LED operating substrate on which a plurality of light-emitting diodes may be disposed, a diffuser on the plurality of light-emitting diodes, and optionally at least one optical sheet. Details of such backlight units (e.g., each component of the light-emitting diodes, fluorescent lamps, light guide plate, various optical sheets, and reflector) are known and are not particularly limited.

[0257] The black matrix 241 may be disposed beneath the transparent substrate 240 and may have openings to conceal gate lines, data lines, and thin-film transistors of the wiring board on the underlying substrate. For example, the black matrix 241 may have a lattice shape. The photoluminescent layer 230 may be disposed within the openings of the black matrix 241 and has a nanoparticle-polymer composite pattern comprising a first region R configured to emit a first light (e.g., red light), a second region G configured to emit a second light (e.g., green light), and a third region B configured to emit / transmit a third light (e.g., blue light). If desired, the photoluminescent layer may further include at least a fourth region. The fourth region may include quantum dots that emit light of a different color (e.g., cyan, magenta, and yellow light) than the light emitted from the first to the third regions.

[0258] In the photoluminescent layer 230, the patterned segments can be repeated corresponding to the pixel regions formed on the lower substrate. A transparent common electrode 231 can be disposed on the photoluminescent layer 230.

[0259] The third region (B) configured to emit / transmit blue light can be a transparent color filter that does not alter the emission spectrum of the light source. In this case, blue light emitted from the backlight unit can enter in a polarized state and can pass through the polarizer and liquid crystal layer as is. If desired, the third region may include quantum dots that emit blue light.

[0260] As described herein, if desired, the display device or light-emitting device according to the embodiments may further include an excitation light blocking layer or a first optical filter layer (hereinafter referred to as the first optical filter layer). The first optical filter layer may be disposed between the bottom surface of the first region (R) and the second region (G) and the substrate (e.g., upper substrate 240) or disposed on the upper surface of the substrate. The first optical filter layer may be a sheet having an opening in the portion corresponding to the pixel region (third region) displaying blue, and thus may be formed in the portion corresponding to the first region and the second region. In other words, the first optical filter layer may be integrally formed on, for example... Figure 3A , Figure 3B , Figure 6 and / or Figure 7 The locations shown are excluding, but not limited to, those overlapping with the third region. Two or more first optical filter layers may be spaced apart from each other at locations overlapping with the first region, the second region, and optionally the third region. When the light source includes a green light-emitting device, a green light-blocking layer may be disposed on the third region.

[0261] The first optical filter layer can block light in a predetermined wavelength region, for example, within the visible light region, and can transmit light in other wavelength regions. For example, it can block blue light (or green light) and can transmit light other than blue light (or green light). The first optical filter layer can transmit, for example, green light, red light, and / or yellow light as a mixture of green and red light. The first optical filter layer can transmit blue light and block green light, and can be disposed on a blue emitting pixel.

[0262] The first optical filter layer can substantially block the excitation light and transmit light in the desired wavelength range. The transmittance of the first optical filter layer for light in the desired wavelength range can be greater than or equal to about 70%, greater than or equal to about 80%, greater than or equal to about 90%, or even about 100%.

[0263] A first optical filter layer configured to selectively transmit red light may be disposed at a position superimposed on the red emitting segment, and a first optical filter layer configured to selectively transmit green light may be disposed at a position superimposed on the green emitting segment. The first optical filter layer may include: a first filter region that blocks (e.g., absorbs) blue and red light and selectively transmits light within a predetermined range (e.g., greater than or equal to about 500 nm, greater than or equal to about 510 nm, or greater than or equal to about 515 nm to less than or equal to about 550 nm, less than or equal to about 545 nm, less than or equal to about 540 nm, less than or equal to about 535 nm, less than or equal to about 530 nm, less than or equal to about 525 nm, or less than or equal to about 520 nm); a second filter region; and a second filter region. The filter region includes a second filter region that blocks (e.g., absorbs) blue and green light and selectively transmits light within a predetermined range (e.g., greater than or equal to about 600 nm, greater than or equal to about 610 nm, or greater than or equal to about 615 nm to less than or equal to about 650 nm, less than or equal to about 645 nm, less than or equal to about 640 nm, less than or equal to about 635 nm, less than or equal to about 630 nm, less than or equal to about 625 nm, or less than or equal to about 620 nm); or a first filter region and a second filter region. In an embodiment, the light source may emit a mixture of blue and green light, and the first optical filter layer may further include a third filter region that selectively transmits blue light and blocks green light.

[0264] The first filter area can be positioned overlapping the green light-emitting section. The second filter area can be positioned overlapping the red light-emitting section. The third filter area can be positioned overlapping the blue light-emitting section.

[0265] The first filter area, the second filter area, and the optional third filter area can be optically isolated. Such a first optical filter layer can help improve the color purity of the display device.

[0266] The display device may further include a second optical filter layer (e.g., a red / green or yellow light recycling layer) disposed between the photoluminescent layer and the liquid crystal layer (e.g., between the photoluminescent layer and the upper polarizer), transmitting at least a portion of the third light (excitation light) and reflecting at least a portion of the first light and / or the second light. The first light may be red light, the second light may be green light, and the third light may be blue light. The second optical filter layer may transmit only the third light (B) in the blue light wavelength region having a wavelength region less than or equal to about 500 nm, and light in the wavelength region greater than about 500 nm (which is green light (G), yellow light, red light (R), etc.) may not pass through the second optical filter layer and be reflected. The reflected green and red light may pass through the first and second regions to be emitted to the outside of the display device.

[0267] The second optical filter layer or the first optical filter layer can be formed as an integrated layer with a relatively flat surface.

[0268] The first optical filter layer may include a polymer film containing dyes and / or pigments that absorb light in wavelengths to be blocked. The second optical filter layer or the first optical filter layer may include a single layer having a low refractive index, and may be, for example, a transparent film having a refractive index less than or equal to about 1.4:1, less than or equal to about 1.3, or less than or equal to about 1.2. The second optical filter layer or the first optical filter layer having a low refractive index may include, for example, porous silica, porous organic materials, porous organic-inorganic composites, or combinations thereof.

[0269] The first or second optical filter layer may comprise multiple layers with different refractive indices. The first or second optical filter layer can be formed by stacking two layers with different refractive indices. For example, the first / second optical filter layer can be formed by alternately stacking a material with a high refractive index and a material with a low refractive index.

[0270] In embodiments, electronic devices may include devices comprising the aforementioned semiconductor nanocrystals or nanoparticles containing semiconductor nanocrystals (e.g., light-emitting devices such as electroluminescent devices or optoelectronic devices such as optical sensors or photodetectors).

[0271] Reference Figure 8A The electronic device 10 includes a first electrode 11 and a second electrode 15 facing each other, and an active layer 13 positioned between the first electrode 11 and the second electrode 15, the active layer including the aforementioned semiconductor nanoparticles.

[0272] In this embodiment, the electronic device may be an electroluminescent device. The semiconductor nanoparticles of the active layer 13 may serve as an emitting layer, in which electrons and holes injected from the first electrode 11 and the second electrode 15 recombine to form excitons, and light of a specific wavelength can be emitted by the energy of the formed excitons. Furthermore, the electronic device may be a photodetector or a solar cell. Specifically, the semiconductor nanoparticles of the active layer 13 may serve as a light-absorbing layer that absorbs external photons and separates them into electrons and holes to provide electrons and holes to the light-absorbing layer of the first electrode 11 and the second electrode 15.

[0273] The hole auxiliary layer 12 can be positioned between the first electrode 11 and the active layer 13, and the electron auxiliary layer 14 can be positioned between the second electrode 15 and the active layer 13.

[0274] The electronic device 10 may also include a substrate (not shown). The substrate may be disposed on the side of the first electrode 11 or the side of the second electrode 15. The substrate may be a substrate comprising an insulating material (e.g., an insulating transparent substrate).

[0275] Furthermore, the substrate may comprise a variety of polymers, such as glass, polyesters (e.g., polyethylene terephthalate (PET), polyethylene naphthalate (PEN)), polycarbonate, polyacrylate, polyimide, polyamide, polysiloxane (e.g., PDMS), inorganic materials (e.g., Al2O3, ZnO), or combinations thereof, and may be made of silicon wafers. The term "transparent" may mean that the transmittance of light of a specific wavelength (e.g., light emitted from semiconductor nanocrystals or nanoparticles comprising semiconductor nanocrystals) is greater than or equal to about 85%, greater than or equal to about 88%, greater than or equal to about 90%, greater than or equal to about 95%, greater than or equal to about 97%, or greater than or equal to about 99%. The thickness of the substrate may be appropriately selected with reference to the substrate material, but there are no particular limitations. Transparent substrates may be flexible.

[0276] One of the first electrode 11 and the second electrode 15 is an anode, and the other is a cathode. For example, the first electrode 11 can be an anode, and the second electrode 15 can be a cathode.

[0277] The first electrode 11 may be made of a conductor (e.g., a metal, a conductive metal oxide, or a combination thereof). The first electrode 11 may be made of a metal (such as nickel, platinum, vanadium, chromium, copper, zinc, or gold) or an alloy thereof, a conductive metal oxide (such as zinc oxide, indium oxide, tin oxide, indium tin oxide (ITO), indium zinc oxide (IZO), or fluorine-doped tin oxide), or a combination of metal and oxide (such as ZnO and Al, or SnO2 and Sb), but is not limited thereto.

[0278] The second electrode 15 may be made of a conductor (e.g., a metal, a conductive metal oxide, and / or a conductive polymer). The second electrode 15 may include, for example, metals (such as aluminum, magnesium, calcium, sodium, potassium, titanium, indium, yttrium, lithium, gadolinium, silver, gold, platinum, tin, lead, cesium, or barium) or alloys thereof, or multilayer materials (such as LiF / Al, lithium oxide (Li₂O) / Al, Liq / Al, LiF / Ca, and BaF₂ / Ca), but is not limited thereto. The conductive metal oxide may be the same as described above.

[0279] There are no particular restrictions on the work function of the first electrode 11 and the second electrode 15, and they can be appropriately selected. The work function of the first electrode 11 can be higher or lower than the work function of the second electrode 15.

[0280] At least one of the first electrode 11 and the second electrode 15 can be a light-transmitting electrode. The light-transmitting electrode can be made of a conductive metal oxide (such as zinc oxide, indium oxide, tin oxide, indium tin oxide (ITO), indium zinc oxide (IZO), or fluorine-doped tin oxide) or of a single layer or multiple layers of a thin metal film. When one of the first electrode 11 and the second electrode 15 is a non-light-transmitting electrode, it can be made of an opaque conductor (such as aluminum (Al), silver (Ag), or gold (Au)).

[0281] The thickness of the first electrode 11 and / or the second electrode 15 is not particularly limited and can be appropriately selected with regard to device efficiency. For example, the thickness of the electrode can be greater than or equal to about 5 nm (e.g., greater than or equal to about 50 nm) and less than or equal to about 100 μm (e.g., less than or equal to about 10 μm, less than or equal to about 1 μm, less than or equal to about 900 nm, less than or equal to about 500 nm, or less than or equal to about 100 nm).

[0282] The active layer 13 comprises semiconductor nanocrystals or nanoparticles comprising semiconductor nanocrystals as described herein. The active layer 13 may comprise a single layer or multiple single layers of semiconductor nanoparticles. Multiple single layers may be greater than or equal to about 2 layers, greater than or equal to about 3 layers, or greater than or equal to about 4 layers and less than or equal to about 20 layers, less than or equal to about 10 layers, less than or equal to about 9 layers, less than or equal to about 8 layers, less than or equal to about 7 layers, or less than or equal to about 6 layers. The active layer 13 may have a thickness greater than or equal to about 5 nm (e.g., greater than or equal to about 10 nm, greater than or equal to about 20 nm, or greater than or equal to about 30 nm) and less than or equal to about 200 nm (e.g., less than or equal to about 150 nm, less than or equal to about 100 nm, less than or equal to about 90 nm, less than or equal to about 80 nm, less than or equal to about 70 nm, less than or equal to about 60 nm, or less than or equal to about 50 nm). The active layer 13 may have a thickness of about 10 nm to about 150 nm, about 10 nm to about 100 nm, or about 10 nm to about 50 nm.

[0283] The electronic device 10 may further include a hole auxiliary layer 12. The hole auxiliary layer 12 is positioned between the first electrode 11 and the active layer 13. The hole auxiliary layer 12 may include a hole injection layer, a hole transport layer, an electron blocking layer (EBL), or a combination thereof. The hole auxiliary layer 12 may be a single-component layer or may have a multilayer structure in which adjacent layers include different components.

[0284] The HOMO level of the hole assist layer 12 may have a HOMO level that matches the HOMO level of the active layer 13 to enhance the mobility of holes transported from the hole assist layer 12 to the active layer 13. For example, the hole assist layer 12 may include a hole injection layer located closer to the first electrode 11 and a hole transport layer located closer to the active layer 13.

[0285] The materials included in the hole assist layer 12 (e.g., a hole transport layer or a hole injection layer) are not particularly limited and may include, for example, poly(9,9-dioctylfluorene-co-N-(4-butylphenyl)-diphenylamine) (TFB), polyarylamine, poly(N-vinylcarbazole), poly(3,4-ethylenedioxythiophene) (PEDOT), poly(3,4-ethylenedioxythiophene):polystyrene sulfonate (PEDOT:PSS), polyaniline, polypyrrole, N,N,N',N'-tetra(4-methoxyphenyl)-benzidine (T PD), 4-bis[N-(1-naphthyl)-N-phenyl-amino]biphenyl (α-NPD), m-MTDATA (4,4',4''-tris[phenyl(m-tolyl)amino]triphenylamine), 4,4',4"-tris(N-carbazolyl)triphenylamine (TCTA), 1,1-bis[(di-4-tolylamino)phenyl]cyclohexane (TAPC), p-type metal oxides (e.g., NiO, WO3, MoO3, etc.), carbon-containing materials (such as graphene oxide), and combinations thereof, but not limited thereto.

[0286] When an electron blocking layer (EBL) is used, the EBL may include, but is not limited to, poly(3,4-ethylenedioxythiophene):poly(styrene sulfonate) (PEDOT:PSS), poly(9,9-dioctyl-fluorene-co-N-(4-butylphenyl)-diphenylamine) (TFB), polyarylamine, poly(N-vinylcarbazole), polyaniline, polypyrrole, N,N,N',N'-tetra(4-methoxyphenyl)-benzidine (TPD), 4-bis[N-(1-naphthyl)-N-phenyl-amino]biphenyl (α-NPD), m-MTDATA, 4,4',4"-tris(N-carbazolyl)-triphenylamine (TCTA), and combinations thereof.

[0287] In one or more hole-assisted layers, the thickness of each layer may be appropriately selected. For example, the thickness of each layer may be greater than or equal to about 5 nm, greater than or equal to about 10 nm, greater than or equal to about 15 nm, or greater than or equal to about 20 nm and less than or equal to about 50 nm (e.g., less than or equal to about 40 nm, less than or equal to about 35 nm, or less than or equal to about 30 nm), but is not limited thereto.

[0288] An electron-assisted layer 14 may be disposed between the active layer 13 and the second electrode 15. The electron-assisted layer 14 may include, for example, an electron injection layer (EIL) that promotes electron injection, an electron transport layer (ETL) that promotes electron transport, a hole blocking layer (HBL) that inhibits hole movement, or a combination thereof. For example, the electron injection layer may be disposed between the electron transport layer and the cathode 15. For example, the hole blocking layer (HBL) may be disposed between the active layer and the electron transport (injection) layer, but is not limited thereto. The thickness of each layer may be suitably selected, and for example, the thickness of each layer may be greater than or equal to about 1 nm and less than or equal to about 500 nm, but is not limited thereto. The electron injection layer may be an organic layer formed by deposition, and the electron transport layer may include inorganic oxide nanoparticles.

[0289] Electron transport layers (ETLs) may include, for example, 1,4,5,8-naphthyl-tetracarboxylic dianhydride (NTCDA), bathcuproine (BCP), tris[3-(3-pyridyl)-trimethylmethyl]borane (3TPYMB), LiF, Alq3, Gaq3, Inq3, Znq2, Zn(BTZ)2, BeBq2, ET204 (8-(4-(4,6-di(naphthyl-2-yl)-1,3,5-triazin-2-yl)phenyl)quinolone), lithium 8-hydroxyquinoline (Liq), n-type metal oxides (e.g., ZnO, HfO2), and combinations thereof, but are not limited thereto.

[0290] Furthermore, the electron transport layer (ETL) may include multiple nanoparticles. The nanoparticles may include a zinc-containing metal oxide (e.g., zinc oxide, zinc magnesium oxide, or a combination thereof). The metal oxide may include Zn. 1-x M x O (where M is Mg, Ca, Zr, W, Li, Ti, Y, Al or a combination thereof, and 0 ≤ x ≤ 0.5). In this formula, x can be greater than or equal to about 0.01 and less than or equal to about 0.3 (e.g., less than or equal to about 0.25, less than or equal to about 0.2, or less than or equal to about 0.15). The absolute value of the LUMO of the aforementioned semiconductor nanocrystals or nanoparticles comprising semiconductor nanocrystals in the active layer can be less than the absolute value of the LUMO of the metal oxide. The (average) size of the nanoparticles can be greater than or equal to about 1 nm (e.g., greater than or equal to about 1.5 nm, greater than or equal to about 2 nm, greater than or equal to about 2.5 nm, or greater than or equal to about 3 nm) and less than or equal to about 10 nm, less than or equal to about 9 nm, less than or equal to about 8 nm, less than or equal to about 7 nm, less than or equal to about 6 nm, or less than or equal to about 5 nm.

[0291] Hole blocking layers (HBLs) may include, for example, 1,4,5,8-naphthalene-tetracarboxylic dianhydride (NTCDA), copper bath (BCP), tris[3-(3-pyridyl)-trimethylyl]borane (3TPYMB), LiF, Alq3, Gaq3, Inq3, Znq2, Zn(BTZ)2, BeBq2, or combinations thereof, but are not limited thereto.

[0292] The thickness of each of the electron auxiliary layers 14 (e.g., an electron injection layer, an electron transport layer, or a hole blocking layer) may be greater than or equal to about 5 nm, greater than or equal to about 6 nm, greater than or equal to about 7 nm, greater than or equal to about 8 nm, greater than or equal to about 9 nm, greater than or equal to about 10 nm, greater than or equal to about 11 nm, greater than or equal to about 12 nm, greater than or equal to about 13 nm, greater than or equal to about 14 nm, greater than or equal to about 15 nm, greater than or equal to about 16 nm, greater than or equal to about 1 7nm, greater than or equal to about 18nm, greater than or equal to about 19nm, or greater than or equal to about 20nm and less than or equal to about 120nm, less than or equal to about 110nm, less than or equal to about 100nm, less than or equal to about 90nm, less than or equal to about 80nm, less than or equal to about 70nm, less than or equal to about 60nm, less than or equal to about 50nm, less than or equal to about 40nm, less than or equal to about 30nm, or less than or equal to about 25nm, but not limited thereto.

[0293] Reference Figure 8BThe electronic device according to the embodiment may have a conventional structure. The electroluminescent device 200 may include an anode 10 disposed on a transparent substrate 100 and a cathode 50 facing the anode 10. The anode 10 may include a transparent electrode based on a metal oxide, and the cathode 50 facing the anode 10 may include a conductive metal having a low work function. For example, the anode (positive electrode) may be an indium tin oxide (ITO) electrode (work function of about 4.6 to about 5.1), and the cathode (negative electrode) 50 may be an electrode including magnesium (Mg, work function of about 3.66), aluminum (Al, work function of about 4.28), or combinations thereof. Furthermore, a hole-assisted layer 20 may be disposed between the anode 10 and an active layer (or semiconductor nanoparticle active layer or nanoparticle active layer) 30 comprising semiconductor nanocrystals or nanoparticles including semiconductor nanocrystals. The hole auxiliary layer 20 may include a hole injection layer and / or a hole transport layer, with the hole injection layer disposed closer to the anode 10 and the hole transport layer disposed closer to the active layer of the semiconductor nanocrystal or nanoparticles comprising semiconductor nanocrystals. Furthermore, the electron auxiliary layer 40 may be disposed between the active layer 30 of the semiconductor nanocrystal or nanoparticles comprising semiconductor nanocrystals and the cathode 50. The electron auxiliary layer 40 may include an electron injection layer and / or an electron transport layer, with the electron injection layer disposed closer to the cathode 50 and the electron transport layer disposed closer to the active layer 30 of the semiconductor nanocrystal or nanoparticles comprising semiconductor nanocrystals.

[0294] Reference Figure 8C Another embodiment of the electronic device may have an inverted structure. The inverted electroluminescent device 300 may include a cathode 50 disposed on a transparent substrate 100 and an anode 10 facing the cathode 50. The cathode 50 may include a transparent electrode based on a metal oxide, and the anode 10 facing the cathode 50 may include a conductive metal with a high work function. For example, the anode 10 may be an indium tin oxide (ITO) electrode (work function from about 4.6 eV to about 5.1 eV), and the cathode 50 may be an electrode including gold (Au, work function about 5.1 eV), silver (Ag, work function about 4.26 eV), aluminum (Al, work function about 4.28 eV), or combinations thereof.

[0295] Furthermore, an electron auxiliary layer 40 may be disposed between the semiconductor nanoparticle active layer 30 and the cathode 50. The electron auxiliary layer 40 may include an electron injection layer and / or an electron transport layer, wherein the electron injection layer may be disposed closer to the cathode 50, and the electron transport layer may be disposed closer to the semiconductor nanocrystal or the nanoparticle active layer 30 comprising the semiconductor nanocrystal. The electron auxiliary layer 40 (e.g., the electron transport layer) may include a metal oxide, and may include crystalline Zn oxide or an n-type doped metal oxide. Additionally, a hole auxiliary layer 20 may be disposed between the anode 10 and the semiconductor nanocrystal or the nanoparticle active layer 30 comprising the semiconductor nanocrystal. The hole auxiliary layer 20 may include a hole injection layer and / or a hole transport layer, wherein the hole injection layer may be disposed closer to the anode 10, and the hole transport layer may be disposed closer to the semiconductor nanocrystal or the nanoparticle active layer 30 comprising the semiconductor nanocrystal. The hole transport layer may include TFB, PVK, or a combination thereof, and the hole injection layer may include MoO3 or another p-type metal oxide.

[0296] The electroluminescent device emits light of a specific wavelength generated in the active layer 30 to the outside through a light-transmitting electrode and a transparent substrate. For example, see reference... Figure 8B When a transparent electrode based on a metal oxide (e.g., indium tin oxide (ITO)) is applied as a light-transmitting electrode to the anode 10, light formed in the active layer is emitted to the outside through the anode 10 and the transparent substrate 100. (Refer to...) Figure 8C When a transparent electrode based on a metal oxide (e.g., indium tin oxide (ITO)) is applied as a light-transmitting electrode to the cathode 50, light formed in the active layer is emitted to the outside through the cathode 50 and the transparent substrate 100.

[0297] The aforementioned electronic device can be manufactured by suitable methods. For example, an electroluminescent device can be manufactured by forming a hole-assisted layer (or an electron-assisted layer) on a substrate on which electrodes are formed, forming an active layer comprising semiconductor nanocrystals or nanoparticles containing semiconductor nanocrystals (e.g., a pattern of the aforementioned semiconductor nanocrystals or nanoparticles containing semiconductor nanocrystals), and forming an electron-assisted layer (or a hole-assisted layer) and electrodes on the active layer. The electrodes, hole-assisted layer, and electron-assisted layer can each be formed independently by suitable methods, and can be formed, for example, by deposition or coating, but are not particularly limited thereto.

[0298] In the following, exemplary embodiments are illustrated in more detail with reference to examples. However, the embodiments of this disclosure are not limited to the examples.

[0299] Example

[0300] Analytical methods

[0301] [1] Photoluminescence analysis

[0302] The photoluminescence (PL) spectra of the prepared nanoparticles and composites including the nanoparticles were obtained using a Hitachi F-7000 spectrophotometer at a predetermined excitation wavelength.

[0303] [2] UV spectral analysis

[0304] UV spectroscopy analysis was performed using an Agilent Cary 5000 spectrometer to obtain UV-Vis absorption spectra.

[0305] [3] ICP analysis

[0306] The Shimadzu ICPS-8100g was used to perform inductively coupled plasma atomic emission spectrometry (ICP-AES) analysis.

[0307] Example 1:

[0308] Selenium (Se) powder was dispersed in trioctylphosphine to prepare Se-TOP (concentration: 0.4 mol (M)). Oleic acid, indium acetate (In(ac)3) as an indium precursor, and Se-TOP as a selenium precursor were added to a reaction flask containing 150 mL of oleylamine to prepare a reaction solution. The reaction solution was vacuum-treated at 120 °C for 10 min, and N2 was supplied to the reaction flask. Subsequently, while heating the reaction solution to the reaction temperature, a zinc precursor (zinc oleate) was added to the reaction solution at 210 °C. The reaction proceeded for 30 min while maintaining the reaction temperature at 280 °C. After the reaction was complete, the reaction solution was cooled to room temperature, and a poor solvent (ethanol) was added to the reaction flask to promote particle precipitation. The resulting particles were dispersed in hexane.

[0309] In the reaction solution, the molar ratio of indium precursor to selenium precursor is 10:1. The amount of indium precursor used in the reaction solution is 0.05 mol per mol of zinc precursor.

[0310] ICP-AES analysis was performed on the manufactured particles, and the results (molar ratio) are summarized in Table 1. Photoluminescence analysis of the manufactured particles confirmed the trap emission peak (peak emission wavelength: 500 nm).

[0311] Example 2:

[0312] Nanoparticles were prepared in the same manner as in Example 1, except that the amount of indium precursor used was 0.1 mol per 1 mol of zinc precursor. The prepared particles were subjected to ICP-AES analysis, and the results (molar ratios) are summarized in Table 1.

[0313] Example 3:

[0314] Nanoparticles were prepared in the same manner as in Example 1, except that the amount of indium precursor used was 0.15 mol per mol of zinc precursor. The prepared particles were subjected to ICP-AES analysis, and the results (molar ratios) are summarized in Table 1.

[0315] Example 4:

[0316] Nanoparticles were prepared in the same manner as in Example 1, except that the amount of indium precursor used was 0.175 mol per mol of zinc precursor. The prepared particles were subjected to ICP-AES analysis, and the results (molar ratios) are summarized in Table 1.

[0317] Example 5:

[0318] Nanoparticles were prepared in the same manner as in Example 1, except that the amount of indium precursor used was 0.2 mol per 1 mol of zinc precursor. The prepared particles were subjected to ICP-AES analysis, and the results (molar ratios) are summarized in Table 1.

[0319] Example 6:

[0320] Nanoparticles were prepared in the same manner as in Example 1, except that the amount of indium precursor used was 0.25 mol per mol of zinc precursor. The prepared particles were subjected to ICP-AES analysis, and the results (molar ratios) are summarized in Table 1.

[0321] Table 1

[0322] CBV: Charge balance value

[0323] Indium content (%): [molar amount of indium / (molar amount of indium + molar amount of selenium + molar amount of zinc)] × 100

[0324] Example 7:

[0325] Selenium (Se) powder was dispersed in trioctylphosphine to prepare Se-TOP (concentration: 0.4M) as a selenium precursor. A reaction solution was prepared in a reaction flask containing 150 mL of oleylamine as the reaction solvent. Oleic acid, indium acetate (In(ac)3) as an indium precursor, and zinc acetate (Zn(ac)2) as a zinc precursor were added to the reaction flask. The reaction solution was vacuum-treated at 120 °C for 10 min, and N2 was supplied to the reaction flask. The reaction solution was then heated to the reaction temperature, and when the temperature reached 280 °C, the selenium precursor was added to the reaction solution. The reaction proceeded for 10 min while maintaining the reaction temperature at 280 °C. After the reaction was complete, the temperature of the reaction solution was cooled to room temperature, and a poor solvent (ethanol) was added to the reaction flask to promote particle precipitation. The resulting particles were dispersed in hexane. Photoluminescence analysis of the prepared particles confirmed the presence of a trap emission peak (peak emission wavelength: 654 nm).

[0326] In the reaction solution, the molar ratio of indium precursor to selenium precursor is 1:2. The amount of indium precursor used is 0.5 mol per mol of zinc precursor.

[0327] Comparison Example 1:

[0328] Selenium (Se) powder was dispersed in trioctylphosphine to prepare Se-TOP (concentration: 0.4M) as a selenium precursor. A reaction solution was prepared in a reaction flask containing 150 mL of trioctylamine (to which oleic acid and oleylamine were added). The reaction solution was vacuum-treated at 120 °C for 10 min, and the interior of the reaction flask was purged with N2. The reaction solution was heated to 240 °C, and diethylzinc (as a zinc precursor) and the prepared selenium precursor were added to the reaction solution. The reaction proceeded for 10 min while maintaining the reaction temperature at 280 °C. After the reaction was complete, the reaction solution was cooled to room temperature, and a poor solvent (ethanol) was added to the reaction flask to promote particle precipitation. The resulting particles were dispersed in hexane.

[0329] Comparison Example 2:

[0330] Nanoparticles were prepared in the same manner as in Example 1, except that trioctylamine was used instead of oleylamine.

[0331] Comparison Example 3:

[0332] Nanoparticles were prepared in the same manner as in Example 1, except that dodecyl mercaptan was used instead of oleic acid as the organic ligand.

[0333] Compare Example 4:

[0334] Nanoparticles were prepared in the same manner as in Example 1, except that the reaction temperature was 220°C.

[0335] Experimental Example 1: PL Analysis

[0336] (1) Photoluminescence spectroscopy (excitation wavelength: 400 nm) was performed on the nanoparticles obtained in Comparative Examples 1 and 2 through 6, and the results are summarized in Figure 9A and Figure 9B And in Table 1. From Figure 9A and Figure 9B As shown in Table 1, the nanoparticles of Comparative Example 1 did not exhibit a trap emission peak, while the nanoparticles of the Example exhibited a trap emission peak with a relatively high intensity, and the emission intensity varied depending on the indium content.

[0337] (2) Photoluminescence analysis (excitation wavelength 320 nm) was performed on the nanoparticles obtained in Example 6, which confirmed that they exhibited trap emission peaks at approximately the same position as the excitation wavelength of 400 nm.

[0338] (3) Compared with the nanoparticles prepared in Example 7, the nanoparticles prepared in Example 1 were shown to exhibit increased photoluminescence intensity.

[0339] (4) Photoluminescence spectroscopy (excitation wavelength: 400 nm) analysis of the nanoparticles prepared in Comparative Example 2 and Comparative Example 4 confirmed that they did not exhibit trap emission peaks.

[0340] The nanoparticles in Comparative Example 3 exhibited emission, but its intensity was significantly lower than that in the example, because in the example, the emission of the nanoparticles increased with increasing reaction time, while in Comparative Example 3, no increase in emission with increasing reaction time was observed.

[0341] Experimental Example 2: UV-Vis Absorption Spectroscopy

[0342] UV-Vis absorption spectroscopy analysis was performed on the nanoparticles obtained in Comparative Example 1 (0% In), as well as in Example 1 (5% In), Example 2 (10% In), and Example 5 (20% In), and the results are summarized in Figure 10A and Figure 10B And in Table 2.

[0343] Table 2

[0344] from Figure 10A and Figure 10B As can be seen from the results in Table 2, the example nanoparticles exhibit a first absorption peak, and the wavelength and absorption edge of the first absorption peak vary depending on the indium content.

[0345] Experimental Example 3: Transmission Electron Microscopy (TEM) Analysis

[0346] Transmission electron microscopy analysis was performed on the particles prepared in Examples 1 and 2, and the results are shown in... Figure 11A and Figure 11B In this study, it was confirmed that the particle sizes prepared in Example 1 and Example 2 were approximately 3.59 nm and approximately 3.31 nm, respectively.

[0347] While this disclosure has been described in conjunction with exemplary examples now considered to be actual embodiments, it will be understood that the subject matter is not limited to the exemplary examples disclosed. Rather, it is intended to cover various modifications and equivalent arrangements included within the spirit and scope of the appended claims.

Claims

1. A type of nanoparticle, The nanoparticles include semiconductor nanocrystals containing zinc, indium, and selenium. in, In semiconductor nanocrystals, the molar ratio of indium to selenium is greater than or equal to 0.1:1 and less than or equal to 0.5:

1. The nanoparticles do not include cadmium, and The nanoparticles are configured to emit a first light, and the peak emission wavelength of the first light is greater than or equal to 480 nanometers and less than or equal to 700 nanometers.

2. The nanoparticles according to claim 1, in, Semiconductor nanocrystals do not include silver, copper, manganese, cobalt, or combinations thereof.

3. The nanoparticles according to claim 1, in, In semiconductor nanocrystals, the molar ratio of indium to selenium is greater than or equal to 0.13:1 and less than or equal to 0.43:

1.

4. The nanoparticles according to claim 1, in, In semiconductor nanocrystals, the molar ratio of indium to zinc and the sum of indium is greater than or equal to 0.02:1 and less than or equal to 0.8:

1.

5. The nanoparticles according to claim 1, in, In semiconductor nanocrystals, the molar ratio of zinc to selenium is greater than or equal to 0.35:1 and less than or equal to 1.34:

1.

6. The nanoparticles according to claim 1, in, In semiconductor nanocrystals, the charge balance value obtained by the following formula is greater than or equal to 0.8 and less than or equal to 1.8: Charge balance value = {2[Zn] + 3[In]} / (2[Se]) Wherein, [Zn], [In] and [Se] are the molar amounts of zinc, indium and selenium in the semiconductor nanocrystals or the nanoparticles, respectively.

7. The nanoparticles according to claim 1, in, The first light has a full width at half maximum (FWHM) of greater than or equal to 50 nanometers and less than or equal to 200 nanometers, and The peak emission wavelength of the first light is greater than or equal to 500 nanometers and less than or equal to 680 nanometers.

8. The nanoparticles according to claim 1, in, In the ultraviolet-visible absorption spectrum, the nanoparticles have an absorption edge in the range of greater than or equal to 380 nanometers and less than or equal to 540 nanometers.

9. The nanoparticles according to claim 1, in, In the ultraviolet-visible absorption spectrum, the nanoparticles have a first absorption peak wavelength greater than or equal to 380 nm and less than or equal to 500 nm.

10. The nanoparticles according to claim 1, in, The nanoparticles have a cone shape.

11. A method for preparing nanoparticles according to claim 1, the method comprising: The indium precursor, selenium precursor, and zinc precursor are brought into contact in an organic solvent in the presence of organic ligands at a reaction temperature. The reaction temperature is greater than or equal to 230℃ and less than or equal to 380℃.

12. The method according to claim 11, in, The method includes: preparing a reaction solution comprising an indium precursor, a selenium precursor, and an organic ligand in an organic solvent; heating the reaction solution to a reaction temperature; and adding a zinc precursor to the reaction solution.

13. The method according to claim 11, wherein, The reaction solution does not include dodecyl mercaptan.

14. The method according to claim 11, wherein, Organic solvents include C5 to C40 primary amine compounds, and Based on the total volume of the organic solvent, the amount of primary amine compounds is greater than or equal to 30% and less than or equal to 100%.

15. The method according to claim 11, wherein, The reaction temperature is greater than or equal to 280℃ and less than or equal to 320℃.

16. A composition comprising: The nanoparticles and liquid carrier according to claim 1.

17. A complex comprising: The matrix and multiple nanoparticles dispersed within it. The plurality of nanoparticles include: the nanoparticles according to claim 1.

18. A display device comprising the nanoparticles according to claim 1.

19. An electronic device comprising: The first electrode and the second electrode are spaced apart from each other; as well as An active layer is disposed between the first electrode and the second electrode. The active layer comprises the nanoparticles according to claim 1.

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