Charge compensation film, charge neutralization device and sample surface analysis equipment

Abstract

The invention provides a charge compensation film, a charge neutralization device and sample surface analysis equipment, and particularly relates to the technical field of photoelectron spectrometer analysis. The charge compensation film is applied to the sample surface analysis equipment, the sample surface analysis equipment comprises a bearing mechanism and an X-ray source, the bearing mechanism is used for bearing a sample, and the X-ray source is used for emitting X-rays to the sample. The charge compensation film is arranged in a light path of the X-ray source irradiating the sample, and the charge compensation film is used for generating photoelectrons under irradiation of the X-ray source so as to reduce positive charges accumulated on the surface of the sample due to continuous emission of the photoelectrons. Therefore, the charge compensation film provided by the invention is directly arranged in an X-ray light path, and the structure of the device is simplified. Low-energy photoelectrons generated by the charge compensation film through excitation can be migrated to the surface of the sample and are compounded with positive charges accumulated on the surface of the sample, so that charge neutralization and compensation are realized.

Description

Technical Field

[0001] This application relates to the field of photoelectron spectrometry analysis technology, and in particular to a charge compensation membrane, a charge neutralization device, and a sample surface analysis device. Background Technology

[0002] X-ray photoelectron spectroscopy (XPS) is a surface analysis technique primarily used to characterize the elements and chemical states of material surfaces. When using XPS to analyze insulators or semiconductors, the continuous emission of photoelectrons results in insufficient electron replenishment, leading to the accumulation of positive charges on the sample surface. This charge binds the photoelectrons, reducing their kinetic energy, causing spectral line shifts, and potentially resulting in spectral peak broadening and distortion.

[0003] In existing sample surface analysis equipment, a dual-beam neutralization system is typically used to neutralize excess charge on the sample surface. In this system, a low-energy argon ion beam carrying a positive charge neutralizes the negative charge on the sample surface, causing the negative charge area to disappear. Simultaneously, a low-energy electron beam floats on the sample, forming an electron cloud. When a positive charge area appears on the sample surface, the electron cloud is attracted by the electric field force, forming an electron rain that falls onto the charged area. Thus, the low-energy electron beam can easily and accurately reach the analysis location and neutralize the positive charge in the charged area. However, because this sample surface analysis equipment uses additional electron guns and ion guns, it increases the complexity of the equipment. Summary of the Invention

[0004] This application provides a charge compensation film, a charge neutralization device, and a sample surface analysis device to solve the technical problem of how to reduce the complexity of sample surface analysis devices.

[0005] The first aspect of this application provides a charge compensation film applied to a sample surface analysis device. The sample surface analysis device includes a support mechanism and an X-ray source. The support mechanism is used to support a sample, and the X-ray source is used to emit X-rays onto the sample.

[0006] The charge compensation film is placed in the optical path of the X-ray source irradiating the sample. The charge compensation film is used to generate photoelectrons under the irradiation of the X-ray source, so as to reduce the positive charge accumulated on the sample surface due to the continuous emission of photoelectrons.

[0007] In this embodiment, since the charge compensation film is placed in the optical path of the X-ray source irradiating the sample, when the X-ray source is working, the emitted X-rays will synchronously irradiate the charge compensation film. Under X-ray irradiation, the charge compensation film can directly generate photoelectrons. These photoelectrons can migrate to the sample surface and recombine with the positive charge accumulated on the sample surface due to continuous photoelectron emission, thereby effectively achieving charge neutralization and compensation on the sample surface. Because the simple charge compensation film can utilize the X-ray source already present in the sample surface analysis equipment to generate neutralizing electrons, the sample surface analysis equipment no longer needs to rely on the separate subsystem (i.e., electron gun or ion gun and its associated power supply, control unit, etc.) specifically set up in the prior art for generating neutralizing charges. Therefore, the introduction of the charge compensation film directly eliminates the need for an additional electron gun / ion gun and its auxiliary systems, simplifies the structure of the sample surface analysis equipment, and significantly reduces the overall complexity of the sample surface analysis equipment. At the same time, since no additional substances (such as ions generated by the ion gun) are introduced, wafer surface contamination can be avoided, and the cleanliness of the sample surface can be improved.

[0008] In one possible implementation, the charge compensation film is made of metal, including at least one of aluminum, gold, magnesium, silver, or tin.

[0009] In this embodiment, since metals (aluminum, gold, magnesium, silver or tin) have a high photoelectric effect cross section under X-ray irradiation, they can efficiently absorb X-ray photons and excite a large number of photoelectrons, which can quickly neutralize the positive charge accumulated on the sample surface due to the continuous emission of photoelectrons, thereby improving the neutralization efficiency of positive charge.

[0010] In one possible implementation, the thickness of the charge compensation film is less than 10 micrometers.

[0011] In this embodiment, the charge compensation film thickness is less than 10 micrometers. The thin-layer structure avoids blocking the X-ray flux, ensuring sufficient mechanical strength while reducing the loss of X-ray intensity.

[0012] In one possible implementation, the size of the charge compensation film is larger than the size of the spot on the charge compensation film irradiated by the X-ray source.

[0013] In this embodiment, by setting the size of the charge compensation film to be larger than the size of the spot irradiated by the X-ray source on the charge compensation film, it can be ensured that the entire area irradiated by X-ray photons can effectively generate photoelectrons, eliminating the insufficient electron emission area caused by the edge of the spot irradiating outside the film, effectively eliminating the spectral peak shift and broadening caused by the accumulation of positive charge on the surface, and improving the measurement accuracy of the sample surface analysis equipment.

[0014] In one possible implementation, the length and width of the charge compensation film are both greater than 200 micrometers and less than 3 mm.

[0015] In this way, by setting the length and width of the charge compensation film to be greater than 200 micrometers and less than 3 mm, it is ensured that the charge compensation film can cover the light spot of conventional X-ray irradiation, so as to achieve effective charge neutralization while maintaining the miniaturization and integration of the device.

[0016] A second aspect of this application provides a charge neutralization device, comprising:

[0017] Such as the charge compensation film mentioned above;

[0018] Mounting base, used to fix the charge compensation film.

[0019] The charge neutralization device provided in the second aspect of this application includes the charge compensation membrane described above and a mounting base. The mounting base is used to fix the charge compensation membrane in place.

[0020] In this embodiment, the charge neutralization device provides reliable mechanical support and positioning for the charge compensation film by setting a mounting base, ensuring that its position and orientation in the optical path are accurate and stable, avoiding displacement or wrinkling of the charge compensation film due to vibration or airflow, thereby ensuring the stability and repeatability of charge compensation.

[0021] In one possible implementation, the mounting base includes a first mounting member and a second mounting member, with the charge compensation film fixedly mounted between the first mounting member and the second mounting member.

[0022] In this embodiment, since the mounting base includes a first mounting component and a second mounting component, the first mounting component and the second mounting component can fix the charge compensation film, which can effectively prevent it from shifting or deforming during use, effectively isolate external interference, and enhance the sample surface analysis equipment's resistance to environmental fluctuations.

[0023] In one possible implementation, the mounting base has an annular stepped structure that encloses a hollow region, and the charge compensation film is fixed to the annular stepped structure.

[0024] In this embodiment, because the mounting base has an integrally formed annular stepped structure, the annular stepped structure provides a stable annular support boundary for the hollow area. Therefore, the charge compensation film can be uniformly and firmly fixed on the preset plane along its entire circumference. At the same time, the effective working area in the middle remains unobstructed and suspended in the hollow area. On the one hand, this ensures the installation rigidity of the charge compensation film 4, and on the other hand, it allows the effective working area of ​​the charge compensation film to be fully exposed, allowing the electrons it generates to be shot towards the sample without obstruction, maximizing the efficiency and coverage of charge neutralization. At the same time, it simplifies the installation structure and improves reliability.

[0025] A third aspect of this application provides a sample surface analysis device, comprising:

[0026] The support mechanism is used to support the sample;

[0027] An X-ray source is used to emit X-rays onto a sample;

[0028] And, as described above, charge neutralization devices;

[0029] The charge neutralization device is located in the optical path of the X-ray source irradiating the sample.

[0030] In the sample surface analysis device provided in the third aspect of this application, a charge neutralization device is disposed in the optical path of the X-ray source irradiating the sample. When the X-ray source is working, the emitted X-rays synchronously irradiate the charge neutralization device. Under X-ray irradiation, the charge neutralization device can directly generate photoelectrons. These photoelectrons can migrate to the sample surface and recombine with the positive charge accumulated on the sample surface due to continuous photoelectron emission, thereby effectively achieving charge neutralization and compensation on the sample surface. Since the simple charge neutralization device can utilize the irradiation of the X-ray source already present in the sample surface analysis device to generate neutralizing electrons, the sample surface analysis device no longer needs to rely on the separate subsystem (i.e., electron gun or ion gun and its associated power supply, control unit, etc.) specifically set up in the prior art for generating neutralizing charges. Therefore, the need for an additional electron gun / ion gun and its auxiliary systems is directly eliminated, simplifying the structure of the sample surface analysis device and significantly reducing the overall complexity of the sample surface analysis device. At the same time, since no additional substances (such as ions generated by the ion gun) are introduced, wafer surface contamination can be avoided, and the cleanliness of the sample surface can be improved.

[0031] In one possible implementation, the charge compensation film is closer to the sample than the X-ray source.

[0032] In this embodiment, the charge compensation film is closer to the sample than the X-ray source. Since the path for photoelectrons to move to the sample surface is shorter, the energy loss of photoelectrons can be reduced. This allows as many photoelectrons generated by the X-ray source irradiating the charge compensation film as possible to fall on the surface of the X-ray irradiated area, which can effectively neutralize the positive charge accumulated on the sample surface.

[0033] In one possible implementation, the distance between the charge compensation film and the sample ranges from 3 to 5 mm.

[0034] In this embodiment, by setting the distance between the charge compensation film and the sample to a range of 3-5 mm, the charge compensation film can be brought as close to the sample as possible while avoiding contact with the sample and causing damage. This allows for efficient and uniform charge compensation while ensuring a safe gap.

[0035] In one possible implementation, the charge compensation film is perpendicular to the direction of X-ray irradiation.

[0036] In this embodiment, X-rays bombard the surface of the charge compensation film at an incident angle of 90°, which can increase the penetration depth of X-rays, thereby exciting the generation of more photoelectrons. This allows more photoelectrons to act on the sample surface, improving the neutralization efficiency of positive charges on the sample surface.

[0037] In one possible implementation, the mounting base is fixed to the optical-mechanical structure or cavity of the sample surface analysis device.

[0038] In this embodiment, in the sample surface analysis device, since its optical-mechanical structure or cavity itself has stable support characteristics, fixing the mounting base to the above structure or cavity can ensure that the charge compensation film remains stable in the device, thereby effectively improving its overall stability.

[0039] In one possible implementation, the optical-mechanical structure includes an imaging module for acquiring an image of the sample surface, and a mounting base is fixed to the imaging module.

[0040] In this embodiment, since the imaging module is close to the sample, fixing the mounting base to the imaging module allows the charge compensation film to be as close to the sample as possible, enabling more photoelectrons generated by X-ray irradiation of the charge compensation film to adhere to the sample surface, thereby optimizing the neutralization efficiency of positive charges on the sample surface.

[0041] In one possible implementation, the optical-mechanical structure includes an electron energy analyzer for receiving photoelectrons excited from the sample surface and analyzing their energy, with a mounting base fixed to the electron energy analyzer.

[0042] In this embodiment, since the mounting base is fixed on the electron energy analyzer, and the entrance lens system of the electron energy analyzer is the necessary channel for photoelectrons and is also close to the sample, the charge neutralization device can be set near the sample, so that the electrons generated by the charge neutralization device can also reach the sample surface with the shortest path and the least loss, thereby improving the efficiency and immediacy of charge neutralization.

[0043] It should be understood that the second and third aspects of this application correspond to the technical solutions of the first aspect of this application, and the beneficial effects achieved by each aspect and the corresponding feasible implementation are similar, and will not be repeated here.

[0044] In addition to the technical problems solved by this application, the technical features constituting the technical solutions, and the beneficial effects brought about by the technical features of these technical solutions described above, other technical problems that can be solved by the charge compensation film, charge neutralization device, and sample surface analysis equipment provided by this application, other technical features contained in the technical solutions, and the beneficial effects brought about by these technical features will be further described in detail in the specific embodiments. Attached Figure Description

[0045] To more clearly illustrate the technical solutions in the embodiments of this application or the prior art, the drawings used in the description of the embodiments or the prior art will be briefly introduced below. Obviously, the drawings described below are only some embodiments of this application. For those skilled in the art, other drawings can be obtained based on these drawings without creative effort.

[0046] Figure 1 This is a schematic diagram of the overall structure of the sample surface analysis device provided in the embodiments of this application;

[0047] Figure 2 This is a schematic diagram of the charge neutralization device provided in the embodiments of this application;

[0048] Figure 3 for Figure 2 A first cross-sectional view of the provided charge neutralization device along the AA direction;

[0049] Figure 4 for Figure 2 A second cross-sectional view of the provided charge neutralization device along the AA direction.

[0050] Explanation of reference numerals in the attached figures:

[0051] 100 - Sample Surface Analysis Equipment;

[0052] 200 - Load-bearing mechanism; 210 - Sample;

[0053] 300 - X-ray source; 310 - Mounting base; 311 - First mounting component; 312 - Second mounting component; 313 - Annular stepped structure; 314 - Hollow region; 320 - Electron gun; 321 - Electron beam; 330 - Anode target; 340 - Monochromator;

[0054] 400-charge compensation film;

[0055] 500-Electromagnetic Lens;

[0056] 600-Electron Energy Analyzer;

[0057] 700-detector;

[0058] 800-charge neutralization device. Detailed Implementation

[0059] The technical solutions of the embodiments of this application will be clearly and completely described below with reference to the accompanying drawings. Obviously, the described embodiments are only a part of the embodiments of this application, and not all of the embodiments. Based on the embodiments of this application, all other embodiments obtained by those of ordinary skill in the art without creative effort are within the scope of protection of this application.

[0060] As described in the background section, in existing sample surface analysis equipment (such as X-ray photoelectron spectrometers), a dual-beam neutralization system is used to neutralize excess charge on the sample surface, but the use of additional electron guns and ion guns increases the system complexity.

[0061] To address the aforementioned technical problems, this application provides a sample surface analysis device, which can be an X-ray photoelectron spectroscopy analyzer. Please refer to... Figure 1The sample surface analysis device 100 may include an X-ray source 300, a charge neutralization device 800, a support mechanism 200, an electron energy analyzer 600, and a detector 700. The X-ray source 300 is located to the side or above the sample 210 and is used to generate X-rays of specific energy to irradiate the surface of the sample 210 and excite photoelectrons. Specifically, the X-ray source 300 includes an electron gun 320, an anode target 330, and a monochromator 340. The electron gun 320 generates a high-energy electron beam 321 and bombards the anode target 330, causing the anode target 330 to produce X-rays. The monochromator 340 selects the incident X-rays and generates X-rays of specific energy. The support mechanism 200 is used to carry and move the sample 210 to be tested. The charge neutralization device 800 is disposed adjacent to the sample 210 and in the optical path of the X-ray source 300 irradiating the sample 210, and is used to neutralize the positive charge accumulated on the surface of the sample 210 due to X-ray irradiation. An electron energy analyzer 600 is located above the sample 210 and is used to filter the energy of photoelectrons excited by the sample 210. A detector 700 is located at the exit of the electron energy analyzer 600 and is used to receive and count the energy-filtered electrons, ultimately converting them into photoelectron spectral signals for analysis. When the carrier mechanism 200 carries the sample 210 to be tested, the electron gun 320 of the X-ray source 300 emits a high-energy electron beam 321 to bombard the anode target 330, generating raw X-rays. Monochromator 340 filters out monochromatic X-rays of specific energies. These rays irradiate the sample surface, exciting photoelectrons and causing positive charges to accumulate on the sample surface. At this time, the charge neutralization device 800 (located in the X-ray irradiation path and adjacent to the sample 210) releases compensation charge through the charge compensation film 400, neutralizing the charge on the sample surface in real time. The excited photoelectrons are energy-filtered by the electron energy analyzer 600 and ultimately received by the detector 700 and converted into photoelectron spectral signals, realizing the analysis of the chemical composition and electronic states of the sample surface.

[0062] Since the charge neutralization device 800 is located in the optical path of the X-ray source 300 irradiating the sample 210, when the X-ray source 300 is working, the X-rays emitted by it will synchronously irradiate the charge neutralization device 800. Under X-ray irradiation, the charge neutralization device 800 can directly generate photoelectrons. These photoelectrons can migrate to the surface of the sample 210 and recombine with the positive charge accumulated on the surface of the sample 210 due to the continuous emission of photoelectrons, thereby effectively achieving charge neutralization and compensation on the surface of the sample 210. Since the charge neutralization device 800 with its simple structure can generate neutralizing electrons by using the irradiation of the X-ray source already present in the sample surface analysis device 100, the sample surface analysis device 100 no longer needs to rely on the separate subsystem (i.e., electron gun or ion gun and its associated power supply, control unit, etc.) specifically set up in the prior art to generate neutralizing charge. Therefore, it directly eliminates the need for an additional electron gun / ion gun and its auxiliary systems in the sample surface analysis device 100, simplifies the structure of the sample surface analysis device 100, and significantly reduces the overall complexity of the sample surface analysis device 100. At the same time, since no additional substances (such as ions generated by the ion gun) are introduced, contamination of the wafer surface can be avoided, thus improving the cleanliness of the sample 210 surface.

[0063] Further, please refer to Figure 2 The charge neutralization device 800 includes a mounting base 310 and a charge compensation film 400. The mounting base 310 is used to fix the charge compensation film 400. Since the mounting base 310 provides reliable mechanical support and positioning for the charge compensation film 400, it ensures that the position and orientation of the charge compensation film 400 in the optical path are accurate and stable, and avoids the charge compensation film from shifting or wrinkling due to vibration or airflow, thereby ensuring the stability and repeatability of charge compensation.

[0064] Specifically, the mounting base 310 is a rigid component with a specific mechanical interface and sufficient structural strength. Its material can be stainless steel, aluminum alloy, or other metals, and its shape can be designed as a plate, L-shaped bracket, or annular flange depending on the fixing position. It is directly fixed to the optical-mechanical structure (such as the lens barrel of the electromagnetic lens 500, the sample stage drive mechanism) or the inner wall of the cavity of the sample surface analysis device 100 by screws, clips, or welding. Because the mounting base 310 is directly fixed to the inherent, stable optical-mechanical structure or cavity inside the device, these structures themselves, as the skeleton of the device, have extremely high rigidity and positional stability. Therefore, they can provide a load-bearing platform for the charge neutralization device 800 with minimal vibration and almost no relative displacement, ensuring the absolute stability of the spatial position of the charge neutralization device 800 during operation. This guarantees the uniformity and repeatability of its charge compensation effect, thereby improving the analytical accuracy of the sample surface analysis device 100.

[0065] The optomechanical structure includes an imaging module, which is an optical system comprising lenses and an array detector. It is located directly above or slightly above the sample 210 to acquire an image of the sample 210's surface topography. The mounting base 310 can be configured to fit the housing or support frame of the imaging module and is directly fixed to the imaging module via its connection holes. Since the mounting base 310 is fixed to the imaging module, and the imaging module is precisely calibrated and positioned at the optimal working distance from the sample 210 surface when performing its observation function, the charge neutralization device 800 can be positioned along with the imaging module at the closest possible location to the sample. This allows the electrons generated by the charge neutralization device 800 to reach the sample 210 surface with the shortest path and minimal loss, improving the efficiency and immediacy of charge neutralization.

[0066] The optomechanical structure may also include an inlet lens system in the electron energy analyzer 600. The electron energy analyzer 600 is a hemispherical analyzer or a cylindrical lens analyzer, and its inlet lens system is precisely aligned with the surface of the sample 210 to receive and filter photoelectrons excited from the sample surface. The mounting base 310 can be fixed to the inlet flange, outer shield, or support arm of the electron energy analyzer 600. Since the mounting base 310 is fixed to the electron energy analyzer 600, and the inlet lens system of the electron energy analyzer 600 is the necessary channel for photoelectrons and is also close to the sample 210, the charge neutralization device 800 can be placed near the sample 210. This allows the electrons generated by the charge neutralization device 800 to reach the surface of the sample 210 with the shortest path and least loss, improving the efficiency and immediacy of charge neutralization.

[0067] In some implementation methods, please refer to Figure 3 The mounting base 310 includes a first mounting member 311 and a second mounting member 312, and the charge compensation film 400 is fixedly mounted between the first mounting member 311 and the second mounting member 312. Since the mounting base 310 includes the first mounting member 311 and the second mounting member 312, the first mounting member 311 and the second mounting member 312 can fix the charge compensation film 400, effectively preventing it from shifting or deforming during use, effectively isolating external interference, and enhancing the resistance of the sample 210 surface analysis equipment to environmental fluctuations.

[0068] Specifically, the mounting base 310 is a clamping structure composed of a first mounting member 311 and a second mounting member 312. The first mounting member 311 and the second mounting member 312 are rigid plates or frames with matched shapes and sizes, and the material can be stainless steel or aluminum alloy. The two are detachably or fixedly connected together by bolts, clips, or hinges, and their opposing inner surfaces form a clamping space for accommodating and fixing the charge compensation film 400. The edge of the charge compensation film 400 is placed flat on the first mounting member 311, and then covered by the second mounting member 312 and a uniform clamping force is applied, thereby achieving a firm installation and flattening of the film. Because the mounting base 310 adopts a clamping structure including the first mounting member 311 and the second mounting member 312, the edge of the soft charge compensation film 400 can be firmly clamped between the two, which can effectively prevent the film material from loosening, wrinkling or shifting due to vibration, thermal stress or internal tension during operation. This ensures that the charge compensation film 400 always remains flat and spatially stable in the working area, thereby ensuring that the emitted electron or ion flow field is uniform and achieving a stable and repeatable charge neutralization effect.

[0069] In other implementations, please refer to Figure 4 The mounting base 310 is a single integral component with an annular stepped structure 313, which can be integrally formed from metal through machining. The annular stepped structure 313 refers to an annular area that is higher on the inner side and lower on the outer side, or has a recessed platform on the inner side, and the central area enclosed by it is the hollow area 314. The charge compensation film 400 is attached to the lower plane or recessed platform of the annular stepped structure 313 by means of its edge (such as adhesive, welding or clamping ring). Because the mounting base 310 has an integrally formed annular stepped structure 313, which provides a stable annular support boundary for the hollow region 314, the charge compensation film 400 can be firmly fixed on the preset plane along its entire circumference. At the same time, the effective working area in the middle remains unobstructed and suspended within the hollow region 314. This ensures the installation rigidity of the charge compensation film 400 and allows the effective working area of ​​the charge compensation film 400 to be fully exposed, allowing the electrons it generates to be directed towards the sample 210 without obstruction, maximizing the efficiency and coverage of charge neutralization, while simplifying the installation structure and improving reliability.

[0070] For details, please refer to Figures 1 to 4The charge compensation film 400 can be disposed in the optical path of the X-ray source 300 irradiating the sample 210. The charge compensation film 400 can generate photoelectrons under the irradiation of the X-ray source 300, thereby reducing the positive charge accumulated on the surface of the sample 210 due to the continuous emission of photoelectrons. The charge compensation film 400 is a thin sheet of conductive or semiconductor material, and its surface facing the sample 210 has the function of emitting low-energy electrons or other charged particles. Since the simple structure of the charge compensation film 400 can generate neutralizing electrons by irradiation from the X-ray source already present in the sample surface analysis device 100, the sample surface analysis device 100 no longer needs to rely on the separate subsystem (i.e., electron gun or ion gun and its associated power supply, control unit, etc.) specifically set up in the prior art for generating neutralizing charges. Therefore, the introduction of the charge compensation film 400 directly eliminates the need for an additional electron gun / ion gun and its auxiliary systems, simplifies the structure of the sample surface analysis device 100, and significantly reduces the overall complexity of the sample surface analysis device 100. At the same time, since no additional substances (such as ions) are introduced, contamination of the wafer surface can be avoided, thus improving the cleanliness of the sample 210 surface.

[0071] In some embodiments, the charge compensation film 400 may be made of metal. Exemplarily, the metal may include at least one of aluminum, gold, magnesium, silver, or tin. The substrate material of the charge compensation film 400 may be a conductive material with a high X-ray absorption coefficient and a large photoelectron yield; this embodiment is not limited thereto. Since metals (aluminum, gold, magnesium, silver, or tin) have a high photoelectric effect cross-section under X-ray irradiation, they can efficiently absorb X-ray photons and excite a large number of photoelectrons, rapidly neutralizing the positive charge accumulated on the surface of sample 210 due to continuous photoelectron emission, thus improving the neutralization efficiency of positive charges. Furthermore, since aluminum, gold, magnesium, silver, or tin are low work function metals, the photoelectron yield can be further increased, thereby enhancing the charge neutralization efficiency. Exemplarily, the charge compensation film 400 may include multiple metals, with multiple metals stacked to generate uniform photoelectrons.

[0072] In some implementations, the charge compensation film 400 has a thickness of less than 10 micrometers (e.g., 1-8 micrometers). The thin-layer structure avoids blocking the X-ray flux, ensuring both sufficient mechanical strength and minimizing the loss of X-ray intensity received by the sample 210.

[0073] For example, the thickness of the charge compensation film 400 can be 1 μm. In the embodiments of this application, it is understood that by setting the thickness of the charge compensation film 400 to be as thin as possible, the transmittance of X-rays can be improved, so that X-rays can penetrate the charge compensation film 400 with only a small energy loss, thereby achieving efficient transmission of X-ray light intensity and avoiding a large loss of light intensity due to the interaction between X-rays and the charge compensation film 400.

[0074] In some embodiments, the size of the charge compensation film 400 is larger than the size of the spot irradiated by the X-ray source 300 on the charge compensation film 400. For example, the size of the charge compensation film 400 is 3mm*3mm, and the size of the spot irradiated by the X-ray source 300 on the charge compensation film 400 is 1.5mm*1.5mm. By setting the size of the charge compensation film 400 to be larger than the size of the spot irradiated by the X-ray source 300 on the charge compensation film 400, it is ensured that the entire area irradiated by X-ray photons can effectively generate photoelectrons, eliminating the insufficient electron emission area caused by the edge of the spot or the halo irradiating outside the film, effectively eliminating the spectral peak shift and broadening caused by the accumulation of positive charge on the surface, and improving the measurement accuracy of the sample surface analysis equipment.

[0075] In some embodiments, the length and width of the charge compensation film 400 are both greater than 200 micrometers and less than 3 mm. By setting the length and width of the charge compensation film 400 to be greater than 200 micrometers and less than 3 mm, it is ensured that the charge compensation film 400 can cover the light spot of conventional X-ray irradiation. While achieving effective charge neutralization, it can also maintain the miniaturization and integration of the device.

[0076] In some embodiments, the charge compensation film 400 is closer to the sample than the X-ray source 300. Compared to the X-ray source 300, the charge compensation film 400 is closer to the sample 210. Because the path for photoelectrons to reach the sample surface is shorter, energy loss is reduced, allowing as many photoelectrons generated by the X-ray source 300 irradiating the charge compensation film 400 as possible to fall on the X-ray irradiated area, effectively neutralizing the positive charge accumulated on the sample 210 surface. Simultaneously, since the photoelectron emission position is close to the sample surface, its beam divergence angle coverage highly overlaps with the X-ray irradiation area on the sample surface, ensuring that as many photoelectrons as possible accurately fall on the neutralization area of ​​the sample surface. This achieves rapid and precise neutralization of the accumulated positive charge on the sample 210 surface, effectively avoiding interference from charge accumulation on the photoelectron emission energy spectrum, and significantly improving the peak resolution and quantitative accuracy of XPS analysis.

[0077] In some embodiments, the distance between the charge compensation film 400 and the sample 210 ranges from 3 to 5 mm. The selection of this distance range is based on a comprehensive trade-off between the uniformity of the electric field distribution and mechanical safety. The lower limit of 3 mm ensures a sufficiently strong neutralizing electron flux density, while the upper limit of 5 mm ensures that other structural components in the sample analysis device 100 have operating space. This achieves uniform and stable charge compensation performance while ensuring system safety. By setting the distance between the charge compensation film 400 and the sample 210 to 3-5 mm, the charge compensation film 400 can be brought as close as possible to the sample 210 while avoiding contact with the sample 210 or other structural components that could cause damage. This allows for efficient and uniform charge compensation while ensuring a safe clearance.

[0078] In some embodiments, the charge compensation film is perpendicular to the X-ray irradiation direction. This perpendicularity can be achieved by adjusting the flange angle of the mounting base 310, adding angle positioning pins, or using a tilt adapter. The X-rays bombarding the surface of the charge compensation film 400 at a 90° incident angle increases the X-ray penetration depth, thereby exciting a greater number of photoelectrons. This results in more photoelectrons acting on the sample 210 surface, improving the neutralization efficiency of the positive charge on the sample 210 surface. Furthermore, because the photoelectron emission angle distribution generated by the perpendicular incident configuration is symmetrical, the electron flux density distribution directed towards the sample 210 is more uniform, avoiding the problem of over-compensation or under-compensation of localized charges on the sample surface caused by the tilt of the electron beam angle.

[0079] The various embodiments or implementation methods described in this specification are presented in a progressive manner. Each embodiment focuses on the differences from other embodiments, and the same or similar parts between the embodiments can be referred to each other.

[0080] It should be noted that phrases such as "in specific implementations," "in some embodiments," "in this embodiment," and "exemplarily" in the specification indicate that the described embodiments may include specific features, structures, or characteristics, but not every embodiment necessarily includes that specific feature, structure, or characteristic. Furthermore, such phrases do not necessarily refer to the same embodiment. Moreover, when a specific feature, structure, or characteristic is described in connection with an embodiment, implementing such a feature, structure, or characteristic in conjunction with other embodiments, whether explicitly described or not, is within the knowledge scope of those skilled in the art.

[0081] Generally speaking, terms should be understood at least in part by their use in context. For example, at least in part by context, the term "one or more" as used in the text can be used to describe any feature, structure, or characteristic of the singular meaning, or a combination of features, structures, or characteristics of the plural meaning. Similarly, at least in part by context, terms such as "a" or "the" can also be understood to convey either singular or plural usage.

[0082] It should be readily understood that “on,” “above,” and “on top of” in this disclosure should be interpreted in the broadest manner, such that “on” means not only “directly on something” but also “on something” with an intermediate feature or layer therebetween, and that “above” or “on top of” means not only “on something” but also “on something” without an intermediate feature or layer therebetween (i.e., directly on something).

[0083] Furthermore, for ease of explanation, spatially relative terms such as "below," "below," "under," "above," and "above" may be used to describe the relationship of one element or feature relative to other elements or features as shown in the figures. Spatially relative terms are intended to encompass different orientations of the device in use or operation other than those shown in the figures. The device may have other orientations (rotated 90 degrees or in other orientations), and the spatially relative descriptive terms used herein may be interpreted accordingly.

[0084] Finally, it should be noted that other embodiments of the invention will readily occur to those skilled in the art upon consideration of the specification and practice of the invention disclosed herein. This invention is intended to cover any variations, uses, or adaptations of the invention that follow the general principles of the invention and include common knowledge or customary techniques in the art not disclosed herein, and is not limited to the precise structures described above and shown in the accompanying drawings, and various modifications and changes can be made without departing from its scope. The scope of the invention is limited only by the appended claims.

Claims

1. A charge compensation film applied to a sample surface analysis device, the sample surface analysis device comprising a support mechanism and an X-ray source, the support mechanism for supporting a sample, and the X-ray source for emitting X-rays onto the sample, characterized in that, include: The charge compensation film is disposed in the optical path of the X-ray source irradiating the sample. The charge compensation film is used to generate photoelectrons under the irradiation of the X-ray source to reduce the positive charge accumulated on the sample surface due to the continuous emission of photoelectrons.

2. The charge compensation film according to claim 1, characterized in that, The charge compensation film is made of metal, including at least one of aluminum, gold, magnesium, silver, or tin.

3. The charge compensation film according to claim 2, characterized in that, The thickness of the charge compensation film is less than 10 micrometers.

4. The charge compensation film according to any one of claims 1 to 3, characterized in that, The size of the charge compensation film is larger than the size of the spot size of the X-ray source irradiating the charge compensation film.

5. The charge compensation film according to any one of claims 1 to 3, characterized in that, The length and width of the charge compensation film are both greater than 200 micrometers and less than 3 mm.

6. A charge neutralization device, characterized in that, include: The charge compensation film as described in any one of claims 1 to 5; Mounting base, which is used to fix the charge compensation film.

7. The charge neutralization device according to claim 6, characterized in that, The mounting base includes a first mounting component and a second mounting component, and the charge compensation film is fixedly installed between the first mounting component and the second mounting component.

8. The charge neutralization device according to claim 6, characterized in that, The mounting base has an annular stepped structure, which encloses a hollow area, and the charge compensation film is fixed to the annular stepped structure.

9. A sample surface analysis device, characterized in that, include: The support mechanism is used to support the sample; An X-ray source is used to emit X-rays onto a sample; And, the charge neutralization device as described in any one of claims 6 to 8; The charge neutralization device is disposed in the optical path of the X-ray source irradiating the sample.

10. The sample surface analysis apparatus according to claim 9, characterized in that, The charge compensation film is closer to the sample than the X-ray source.

11. The sample surface analysis apparatus according to claim 10, characterized in that, The distance between the charge compensation film and the sample ranges from 3 to 5 mm.

12. The sample surface analysis apparatus according to any one of claims 9 to 11, characterized in that, The charge compensation film is perpendicular to the irradiation direction of the X-rays.

13. The sample surface analysis apparatus according to any one of claims 9 to 11, characterized in that, The mounting base is fixed to the optical-mechanical structure in the sample surface analysis device or the cavity of the sample surface analysis device.

14. The sample surface analysis apparatus according to claim 13, characterized in that, The optical-mechanical structure includes an imaging module for acquiring images of the sample surface, and the mounting base is fixed to the imaging module.

15. The sample surface analysis apparatus according to claim 13, characterized in that, The optical-mechanical structure includes an electron energy analyzer for receiving photoelectrons excited from the sample surface and analyzing their energy, and the mounting base is fixed to the electron energy analyzer.

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