Wafer edge exposure method and device in coating developer

Abstract

The invention relates to the technical field of semiconductor manufacturing, in particular to a wafer edge exposure method and device in a coating developer. According to the method, light intensity of starting and ending points of a rectangular exposure area of a wafer is compensated through light spot motion control or process control, so that the exposure energy of the rectangular exposure area is consistent; the device comprises a light source assembly, a wafer bearing table, a movement mechanism and an alignment module, the wafer bearing table is arranged on the movement mechanism, and the wafer bearing table is used for bearing a wafer; the light source assembly is used for exposing an annular exposure area and a rectangular exposure area at the edge of a wafer, and the alignment module is used for detecting wafer position information; and the movement mechanism is used for driving the wafer bearing table to rotate and carrying out position dynamic compensation according to the wafer position information detected by the alignment module so as to ensure the uniformity of the exposure width and the exposure dose of the annular exposure area. The problem of insufficient exposure energy of the starting point and the ending point of the rectangular exposure area at the edge of the wafer is solved by controlling the exposure mode, so that the effect of consistent exposure quantity of the exposure area is achieved.

Description

Technical Field

[0001] This invention relates to the field of semiconductor manufacturing technology, and in particular to a method and apparatus for wafer edge exposure in a coating and developing machine. Background Technology

[0002] Coating, exposure, and development are crucial processes for transferring photomask patterns. However, due to process limitations, coating inevitably leads to film thickness bulges and photoresist buildup at the wafer edges. To address this, edge bead removal (EBR) using chemical solvents is often used during coating to remove excess photoresist. However, the precision of this removal is insufficient. Therefore, a wafer edge exposure method is needed to remove photoresist within a specific width at the edge, preventing edge defects in subsequent processes such as lithography or etching. WEE, short for wafer edge exposure, works by exposing a specific area of ​​the wafer where photoresist removal is desired for a certain period. This area can be the wafer edge, markings on the wafer surface, or alignment marks. The exposed area is then revealed during the development process. WEE exposure requires precise control to ensure accurate exposure width without affecting the patterned areas on the chip.

[0003] In existing WEE processes, when exposing the wafer edge marking area, since the marking area is generally rectangular, the wafer needs to move linearly during exposure to achieve the desired rectangular exposure area. However, because the photomask is typically a regular rectangle of a certain size, the exposure amount received by the photoresist varies across different locations within the exposure area. The exposure amount received at the beginning and end points of the exposure area is less than that in the middle area. This difference in exposure amount can be significantly amplified on some sensitive photoresists, resulting in uneven corners of the rectangular exposure area. (See [link to relevant documentation]). Figure 1-2 As shown. In addition, insufficient exposure at the start and end points can also lead to a larger width of the transition color stripe area between the exposed and unexposed areas at the start and end points. Therefore, it is crucial to develop a device and method for precisely controlling WEE exposure. Summary of the Invention

[0004] To address the aforementioned problems, the present invention aims to provide a wafer edge exposure method and apparatus in a coating and developing machine, thereby solving the problem of insufficient exposure at the start and end points when exposing the rectangular marking area at the edge of the WEE process in the existing WEE process, and thus achieving the effect of consistent exposure in the exposure area.

[0005] In order to achieve the above objectives, the present invention adopts the following technical solution:

[0006] In one aspect, this invention provides a wafer edge exposure method in a coating and developing machine, which compensates for the light intensity at the start and end points of the rectangular exposure area of ​​the wafer by controlling the movement or process of the light spot, so as to obtain consistent exposure energy in the rectangular exposure area.

[0007] The motion control of the light spot includes the motion speed control and / or motion time control of the light spot at the start and end points of the rectangular exposure area.

[0008] The movement time of the light spot at the start and end points of the rectangular exposure area is controlled by compensating for the exposure time at the start and end points of the rectangular exposure area to increase the exposure energy at the start and end points.

[0009] The speed of the light spot at the start and end points of the rectangular exposure area is controlled as follows: the acceleration is minimal at the start of the exposure, and then the acceleration gradually increases; when the speed reaches the set value, a uniform exposure process begins; when approaching the end of the exposure, the speed begins to gradually decrease.

[0010] The process control of the light spot includes three linear movements with the start and end points of the light spot movement located on the outside of the wafer. The second movement is within the rectangular exposure area, and the start point of the second movement is superimposed on the end point of the first movement, and the end point of the second movement is superimposed on the start point of the third movement.

[0011] In another aspect, the present invention provides a wafer edge exposure apparatus in a coating and developing machine for implementing the above-described method, comprising a light source assembly, a wafer stage, a motion mechanism, and an alignment module. The wafer stage is disposed on the motion mechanism and is used to carry the wafer. The light source assembly is used to expose the annular exposure area and the rectangular exposure area at the edge of the wafer. The alignment module is used to detect the position information of the wafer. The motion mechanism is used to drive the wafer stage to rotate and to perform dynamic position compensation based on the wafer position information detected by the alignment module, thereby ensuring the uniformity of the exposure width of the annular exposure area and the uniformity and accuracy of the exposure width of the rectangular exposure area.

[0012] The light source assembly includes a light source, a lens, and a mask arranged sequentially along the optical path. The light emitted by the light source passes through the lens and the mask in sequence to form a rectangular light spot, which exposes the annular exposure area and the rectangular exposure area of ​​the wafer.

[0013] The motion mechanism includes a Y-axis linear motion module, an X-axis linear motion module, and a main spindle rotary motor connected sequentially from bottom to top. The output shaft of the main spindle rotary motor is connected to the plate support platform. The main spindle rotary motor is used to drive the plate support platform to rotate. The Y-axis linear motion module and the X-axis linear motion module are used to drive the main spindle rotary motor to move the base along the Y and X directions, respectively.

[0014] The wafer position information includes wafer center deviation status information and wafer notch position information.

[0015] By controlling the movement time and movement mode at different positions during the exposure process, the overall exposure dose of the rectangular exposure area tends to be consistent.

[0016] The advantages and beneficial effects of the present invention are as follows: The wafer edge exposure device provided by the present invention improves the problem of excessively wide colored stripes between the start and end point exposure areas and the non-exposure areas by exposing the wafer edge. By optimizing the shape of the photomask and the wafer movement logic control during the exposure process, the defect of insufficient exposure at the start and end points is improved, thereby solving the problem of excessively wide colored stripes between the start and end point exposure areas and the non-exposure areas.

[0017] This invention provides a WEE (Wafer Exposure) method that improves the insufficient exposure energy at the start and end points of a rectangular exposure area at the wafer edge by controlling the exposure mode. In the first embodiment, by controlling the wafer exposure movement to pause briefly at the start and end points, the exposure time at these points is increased, thereby improving the problem of insufficient exposure at the start and end points. In the second embodiment, by changing the movement mode and setting the start and end points of the spot movement outside the wafer, the actual rectangular exposure area's start and end points are a superposition of two movements through a combination of multiple movement segments, thereby improving the insufficient exposure dose at the start and end points of the rectangular exposure area. Attached Figure Description

[0018] Figure 1 A top view of the underexposed rectangular exposure area of ​​the wafer;

[0019] Figure 2 This is a schematic diagram of the color transition zone between the rectangular exposed area and the unexposed area.

[0020] Figure 3 This is an isometric view of a wafer edge exposure device in a coating and developing machine according to the present invention;

[0021] Figure 4 This is a schematic diagram of the working state of a wafer edge exposure device in a coating and developing machine according to an embodiment of the present invention;

[0022] Figure 5 This is a graph showing the change in light intensity dose along the length of the rectangular exposure area in an embodiment of the present invention.

[0023] Figure 6 This is a schematic diagram of the working state of a wafer edge exposure device in a coating and developing machine according to another embodiment of the present invention.

[0024] In the diagram: 1-Light source, 2-Lens, 3-Mask, 4-Light spot, 5-Wafer, 6-Photoresist, 7-Annular exposure area, 8-Spindle rotary motor, 9-X-axis drive motor, 10-X-axis lead screw guide, 11-Spindle rotary motor motion base, 12-Y-axis drive motor, 13-Y-axis lead screw guide, 14-Alignment module, 15-Rectangular exposure area, 16-Wafer notch, 17-Color transition area. Detailed Implementation

[0025] To make the objectives, technical solutions, and advantages of this invention clearer, the invention will be described in detail below with reference to the accompanying drawings and specific embodiments.

[0026] See Figures 3 to 6 As shown, an embodiment of the present invention provides a wafer edge exposure method in a coating and developing machine. By controlling the movement or process of the light spot, the light intensity at the start and end points of the rectangular exposure area 15 of the wafer 5 is compensated to obtain consistent exposure energy in the rectangular exposure area 15.

[0027] In embodiments of the present invention, the motion control of the light spot includes the motion speed control and / or motion time control of the light spot at the start and end points of the rectangular exposure area 15.

[0028] Specifically, the movement time of the light spot at the start and end points of the rectangular exposure area 15 is controlled by compensating for the exposure time at the start and end points of the rectangular exposure area 15, increasing the exposure energy at the start and end points, so that the exposure energy received by the entire rectangular exposure area 15 is more uniform.

[0029] Specifically, the speed control of the light spot's movement at the start and end points of the rectangular exposure area 15 is as follows: the acceleration is minimal at the start of the exposure, and then the acceleration gradually increases; when the speed reaches the set value, a uniform exposure process begins; when approaching the end of the exposure, the speed gradually decreases, so as to make the overall exposure dose of the rectangular exposure area 15 as consistent as possible.

[0030] In an embodiment of the present invention, the process control of the light spot includes three linear movements with the start and end points of the light spot movement located outside the wafer 5, wherein the second movement is within the rectangular exposure area 15, and the start point of the second movement is superimposed with the end point of the first movement, and the end point of the second movement is superimposed with the start point of the third movement.

[0031] This invention provides a wafer edge exposure method in a coating and developing machine, which improves the phenomenon of insufficient exposure energy at the start and end points of the rectangular exposure area at the wafer edge by controlling the exposure mode.

[0032] Based on the above design concept, another embodiment of the present invention provides a wafer edge exposure device in a coating and developing machine to improve the insufficient exposure energy at the start and end points of the rectangular exposure area at the wafer edge. See also Figures 3 to 6As shown, the wafer edge exposure device in the coating and developing machine includes a light source assembly, a wafer stage, a motion mechanism, and an alignment module 14. The wafer stage is mounted on the motion mechanism and is used to support the wafer 5. The light source assembly is used to expose the annular exposure area 7 and the rectangular exposure area 15 at the edge of the wafer 5. The alignment module 14 is used to detect the position information of the wafer 5. The motion mechanism is used to drive the wafer stage to rotate and to perform dynamic position compensation based on the position information of the wafer 5 detected by the alignment module 14, so as to ensure the uniformity of the exposure width of the annular exposure area 7 and the uniformity and accuracy of the exposure width of the rectangular exposure area 15.

[0033] See Figure 1 As shown, in an embodiment of the present invention, the light source assembly includes a light source 1, a lens 2, and a mask 3 arranged sequentially along the optical path. The light emitted by the light source 1 passes through the lens 2 and the mask 3 sequentially to form a rectangular light spot, which exposes the annular exposure area 7 and the rectangular exposure area 15 of the wafer 5.

[0034] See Figure 1 , Figure 2 As shown, in an embodiment of the present invention, the motion mechanism includes a Y-axis linear motion module, an X-axis linear motion module, and a main spindle rotary motor 8 connected sequentially from bottom to top. The output shaft of the main spindle rotary motor 8 is connected to the support platform, and the main spindle rotary motor 8 is used to drive the support platform to rotate. The Y-axis linear motion module and the X-axis linear motion module are used to drive the main spindle rotary motor motion base to move along the Y and X directions, respectively.

[0035] In this embodiment, the X-axis linear motion module includes an X-axis drive motor 9 and an X-axis lead screw guide rail 10, with the X-axis drive motor 9 providing power for X-axis motion; the Y-axis linear motion module includes a Y-axis drive motor 12 and a Y-axis lead screw guide rail 13, with the Y-axis drive motor 12 providing power for Y-axis motion.

[0036] Specifically, the wafer position information includes wafer center deviation status information and wafer notch 16 position information. This invention achieves consistent overall exposure dose in the rectangular exposure area 15 by controlling the movement time and movement mode at different positions during the exposure process. In this embodiment, the wafer 5 is a silicon wafer or other compound wafer with a diameter of 150-300mm, such as SiC, GaAs, GaN, etc. The light source 1 can be a mercury lamp or an ultraviolet LED light source, and the illuminance can be set from 150-3000mw / cm². 2 Or 500-2000mw / cm 2 Or 1000-1500mw / cm 2The light source is led out through an optical fiber, which can be rectangular or circular, with a diameter of 3-15mm, 5-11mm, or 7-9mm. The light emitted by the light source 1 is focused or homogenized by a lens 2, which can be a homogenizing lens, a condensing lens, or a combination of multiple lenses. The light refracted by the lens 2 then passes through a mask 3, which can be rectangular or square, with dimensions of 3cm*3cm, 2cm*5cm, or 3cm*4cm.

[0037] The present invention provides a wafer edge exposure device in a coating and developing machine, which improves the problem of excessively wide colored stripes between the start and end point exposure areas and the non-exposure areas by exposing the wafer edge. By optimizing the shape of the photomask and the wafer movement logic control during the exposure process, the defect of insufficient exposure at the start and end points is improved, thereby solving the problem of excessively wide colored stripes between the start and end point exposure areas and the non-exposure areas.

[0038] The present invention provides a wafer edge exposure device in a coating and developing machine, the exposure process of which includes the following steps:

[0039] Step S1: The wafer 5 to be exposed is vacuum-adsorbed onto the substrate, and the main spindle rotary motor 8 of the motion mechanism drives the substrate and the wafer 5 to rotate together at the set speed.

[0040] Step S2: The wafer 5 moves to the alignment module 14 for alignment. During the alignment process, the wafer stage carries the wafer 5 and rotates one revolution. The alignment module 14 records the wafer center deviation and the wafer notch position.

[0041] Step S3: The wafer stage carries wafer 5 and moves it to the exposure position;

[0042] Step S4: The light emitted by the light source 1 passes through the lens 2 and the mask 3 in sequence to form a rectangular light spot. The light spot illuminates the position of the wafer 5 that needs to be exposed. Then the wafer stage carries the wafer 5 and rotates at least one revolution according to the set time. During the rotation, the motion mechanism performs dynamic position compensation according to the data of the alignment module 14 to ensure the uniformity of the exposure width of the wafer 5 edge.

[0043] Step S5: The spindle rotation motor 8 stops, and the Y-axis linear motion module and the X-axis linear motion module control the light spot to move within the rectangular exposure area 15 to expose the rectangular exposure area 15.

[0044] After edge exposure of wafer 5, the rectangular exposure area 15 opposite wafer notch 16 is then exposed. During the exposure of the rectangular exposure area 15, the stage does not need to rotate; movement is only controlled by the X and Y axis motors. First, the Y-axis linear module drives the light spot to the longitudinal position of the rectangular exposure area 15. Then, the X-axis linear module moves linearly according to a set time and distance, exposing the rectangular area on the wafer. However, since the light spot has a certain size, the purely linear movement results in less exposure at the start and end points than in the middle of the rectangular exposure area 15. After development, the exposed area of ​​wafer 5 becomes visible. Due to insufficient exposure at the start and end points of the rectangular exposure area 15, the transition area between the exposed and unexposed areas at these points is too wide and exhibits colored stripes.

[0045] To address the issue of insufficient exposure dose at the start and end points of the rectangular exposure area 15, this invention controls the movement time and movement mode at different positions during the exposure process to ensure a more consistent overall exposure dose across the rectangular exposure area 15. This avoids the problems that occur after development due to insufficient exposure dose at the start and end points. Figure 2 The transition region shown exhibits colored stripes.

[0046] First implementation method:

[0047] When considering only the uniform exposure process of the entire rectangular exposure area 15, i.e., there are no acceleration and deceleration phases, or the motor can instantly accelerate to the set uniform speed value, the exposure dose at various positions within the rectangular exposure area 15 is as follows: Figure 5 As shown, it is clear that the length of the entire rectangular exposure area 15 is L, and the exposure dose at the start and end points is significantly less than the exposure dose p in the middle exposure area. The width a of this area with insufficient exposure dose is exactly the size and width of the light spot.

[0048] To address insufficient exposure dose at the start and end points, wafer 5, during exposure in the rectangular exposure area 15, can control the movement time at the start and end points. Even if the exposure movement speed at the start and end points is lower than that in the middle area, the movement speed can be slowed down closer to the edges of the start and end points. During the exposure process in the rectangular exposure area 15, the stage moves at a constant speed for most stages (from a to La), i.e., the X-axis drive motor 9 moves at a constant speed. From the start of exposure to uniform speed exposure, the X-axis drive motor 9 undergoes an acceleration process. To solve the problem of insufficient exposure dose at the start and end points, the acceleration can be minimized, or a variable acceleration process can be used. The acceleration is minimal at the start of exposure, and then gradually increases. When the speed reaches the set value, the uniform speed exposure process begins. After the exposure movement distance exceeds a, uniform speed exposure begins again. The set value of the speed is derived from the settings of the exposure distance and exposure time. After the uniform speed exposure process has been running for a certain distance, i.e., near the end of exposure, the speed gradually slows down, and this is also a variable acceleration process, i.e., the acceleration decreases closer to the end of exposure. This ensures that the start and end points of exposure receive the same exposure dose as the uniform speed exposure stage. In particular, during rectangular exposure, a brief pause can be made at the start and end points, such as 0.1-2s, 0.3-1.5s, or 0.5-1s, to compensate for insufficient exposure dose at the start and end points.

[0049] In summary, the first implementation method mainly compensates for insufficient exposure dose at the start and end points by changing the movement speed or movement time of the start and end points. By using a smaller acceleration or even a short pause at the start and end points, the exposure dose at the start and end points is increased compared to the original exposure method. By adjusting the magnitude of the exposure movement acceleration and the dwell time at the start and end points, the excessively wide color pattern between the exposed and unexposed areas at the start and end points can be improved.

[0050] Second implementation method:

[0051] After the edge of wafer 5 has been exposed, a new exposure motion method can be used. In this case, the movement of the rectangular light spot on the wafer surface is no longer a straight line, but rather... Figure 6 The three straight lines shown represent three overlapping motions. The second motion occurs within the rectangular exposure area 15, with its starting point overlapping the ending point of the first motion, and its ending point overlapping the starting point of the third motion. In this exposure motion mode, at the start of exposure, the light spot is at position a on the outer side of wafer 5. Then, through the radial movement of the stage, the light spot 4 begins to move inward toward the interior of wafer 5 to position b. Next, it moves horizontally, consistent with conventional exposure, to position c. Finally, through the radial movement of the stage, the light spot 4 moves away from the wafer, reaching position d on the outer side of the wafer.

[0052] In multi-step exposure mode, the rectangular exposure area 15 avoids starting and ending the exposure within the rectangular area itself; both the start and end points are outside the wafer 5. Furthermore, because this exposure mode involves multiple segments combined together, the required rectangular space from position b to c receives a uniform exposure dose. Since positions b to c are the intersections of two segments, the exposure dose is supplemented. The start and end points are not considered, as they both begin or end outside the wafer 5.

[0053] This invention mainly achieves consistent exposure dose across the entire rectangular area by compensating for the exposure dose at the start and end points of the rectangular area, thereby obtaining a regular rectangular exposure area after development, and significantly improving the problem of excessively wide color lines after development of the exposure area at the start and end points and the non-exposure area.

[0054] In summary, the second implementation method mainly controls the motion so that the start and end points of the rectangular area exposure are both on the outside of wafer 5. In the actual rectangular area exposure process, the original exposure start and end points are the superposition of the start and end points of the two motions. That is, there is no phenomenon of insufficient exposure dose in the actual rectangular area, thereby avoiding the problem of excessive color patterns in the transition area between the rectangular exposure area and the non-exposure area.

[0055] Example

[0056] The width of the color texture transition area 17 between the rectangular exposure area 15 and the non-exposure area is shown in [reference]. Figure 2 As shown.

[0057] Using an Olympus optical microscope, the exposed area after development was observed and the width of the color pattern in the transition zone between the exposed and unexposed areas was measured. The lengths of the color pattern transition zone at the beginning of exposure were a1 and b1, and the lengths of the color pattern transition zone at the end of exposure were a2 and b2, respectively.

[0058] Table 1. Width of the color pattern in the transition zone between the start and end points of different exposure modes.

[0059]

[0060] As can be seen from the table, both adding exposure pauses at the start and end points and using multi-segment motion to complete rectangular area exposure by moving the exposure start and end points outside the wafer can significantly improve the width of the color pattern in the transition area between the exposed and unexposed areas. In particular, the second embodiment, where the movement speed from position a to position b and from position c to position d is 5 mm / s, can achieve the minimum color pattern width. In this method, the color pattern width at the start and end points is less than 100 μm, which is a significant improvement compared to the original method.

[0061] This invention provides a wafer edge exposure method and apparatus in a coating and developing machine, which improves the problem of insufficient exposure energy at the start and end points of the rectangular exposure area at the wafer edge by controlling the exposure mode. In the first embodiment, by controlling the wafer exposure movement to pause briefly at the start and end points, the exposure time at these points is increased, thereby improving the problem of insufficient exposure at the start and end points. In the second embodiment, by changing the movement mode and setting the start and end points of the spot movement outside the wafer, the actual rectangular exposure area's start and end points are the superposition of two movement segments through a combination of multiple movement segments, thereby improving the insufficient exposure dose at the start and end points of the rectangular exposure area.

[0062] The above description is merely an embodiment of the present invention and is not intended to limit the scope of protection of the present invention. Any modifications, equivalent substitutions, improvements, extensions, etc., made within the spirit and principles of the present invention are included within the scope of protection of the present invention.

Claims

1. A method for exposing wafer edges in a coating and developing machine, characterized in that, By controlling the motion or process of the light spot, the light intensity at the start and end points of the rectangular exposure area (15) of the wafer (5) is compensated to obtain consistent exposure energy in the rectangular exposure area (15).

2. The wafer edge exposure method in a coating and developing machine according to claim 1, characterized in that, The motion control of the light spot includes motion speed control and / or motion time control of the light spot at the start and end points of the rectangular exposure area (15).

3. The wafer edge exposure method in a coating and developing machine according to claim 2, characterized in that, The movement time of the light spot at the start and end points of the rectangular exposure area (15) is controlled by compensating for the exposure time at the start and end points of the rectangular exposure area (15) to increase the exposure energy at the start and end points.

4. The wafer edge exposure method in a coating and developing machine according to claim 2, characterized in that, The speed of the light spot at the start and end points of the rectangular exposure area (15) is controlled as follows: the acceleration is the smallest at the start of the exposure, and then the acceleration gradually increases; when the speed reaches the set value, the uniform exposure process begins; when approaching the end of the exposure, the speed begins to gradually decrease.

5. The wafer edge exposure method in a coating and developing machine according to claim 1, characterized in that, The process control of the light spot includes three linear movements with the start and end points of the light spot movement located outside the wafer (5), wherein the second movement is within the rectangular exposure area (15), and the start point of the second movement is superimposed on the end point of the first movement, and the end point of the second movement is superimposed on the start point of the third movement.

6. A wafer edge exposure apparatus in a coating and developing machine for implementing the method as described in any one of claims 1-5, characterized in that, It includes a light source assembly, a wafer stage, a motion mechanism, and an alignment module (14), wherein the wafer stage is mounted on the motion mechanism and is used to carry the wafer (5); the light source assembly is used to expose the annular exposure area (7) and the rectangular exposure area (15) on the edge of the wafer (5); and the alignment module (14) is used to detect the position information of the wafer (5). The motion mechanism is used to drive the wafer stage to rotate and to perform dynamic position compensation based on the position information of the wafer (5) detected by the alignment module (14) to ensure the uniformity of the exposure width of the annular exposure area (7) and the uniformity and accuracy of the exposure width of the rectangular exposure area (15).

7. The wafer edge exposure apparatus in the coating and developing machine according to claim 6, characterized in that, The light source assembly includes a light source (1), a lens (2) and a mask (3) arranged sequentially along the optical path. The light emitted by the light source (1) passes through the lens (2) and the mask (3) in sequence to form a rectangular light spot, which exposes the annular exposure area (7) and the rectangular exposure area (15) of the wafer (5).

8. The wafer edge exposure apparatus in the coating and developing machine according to claim 7, characterized in that, The motion mechanism includes a Y-axis linear motion module, an X-axis linear motion module, and a main spindle rotary motor (8) connected sequentially from bottom to top. The output shaft of the main spindle rotary motor (8) is connected to the plate support platform. The main spindle rotary motor (8) is used to drive the plate support platform to rotate. The Y-axis linear motion module and the X-axis linear motion module are used to drive the plate support platform to move along the Y and X directions, respectively.

9. The wafer edge exposure apparatus in the coating and developing machine according to claim 6, characterized in that, The wafer position information includes wafer center deviation status information and wafer notch position information.

10. The wafer edge exposure apparatus in the coating and developing machine according to claim 6, characterized in that, By controlling the movement time and movement mode at different positions during the exposure process, the overall exposure dose of the rectangular exposure area (15) tends to be consistent.

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