Method and device for constructing IGBT (Insulated Gate Bipolar Translator) electricity-heat-force coupling transient model
By obtaining the roughness parameters of the IGBT contact components, calculating the contact resistance and thermal resistance, establishing a finite element model, and performing electro-thermal-mechanical coupling solution, the problem of the influence of contact surface roughness in multiphysics modeling of elastic compression type IGBTs is solved, the simulation accuracy is improved, and the true behavior of the device under dynamic operating conditions is reflected.
Patent Information
- Authority / Receiving Office
- CN · China
- Patent Type
- Applications(China)
- Current Assignee / Owner
- STATE GRID HEBEI ELECTRIC POWER RES INST
- Filing Date
- 2025-12-09
- Publication Date
- 2026-05-08
AI Technical Summary
Existing models fail to effectively reflect the multiphysics modeling of elastically press-fit IGBTs, especially neglecting the influence of contact surface roughness on interfacial electrothermal properties, resulting in deviations when simulating pressure decay and contact degradation caused by temperature cycling.
By obtaining the roughness parameters of the IGBT contact components, calculating the contact resistance and thermal resistance, establishing a finite element model, configuring the boundary conditions of electrical, thermal and structural mechanical fields in the model, establishing the electro-thermal-mechanical coupling relationship, and performing transient solutions.
It achieves a refined description of the characteristics of the elastic compression interface, improves the accuracy of transient coupling simulation, and can more realistically reflect the junction temperature fluctuation and stress distribution of the device under dynamic operating conditions.
Smart Images
Figure CN121997627A_ABST
Abstract
Description
Technical Field
[0001] The embodiments in this specification relate to the field of electronic device modeling and simulation technology, and in particular to a method for constructing an IGBT electro-thermal-mechanical coupling transient model. Background Technology
[0002] As a core device in the field of high voltage and high power, the reliability of the press-fit insulated gate bipolar transistor (IGBT) is highly dependent on the complex coupling behavior of multiple physical fields such as electricity, heat and force.
[0003] In recent years, significant progress has been made in multiphysics modeling for press-fit IGBTs. For example, some studies have established multi-level collaborative transient simulation models of devices and cells, revealing the weak points and boundary conditions that lead to failure, thus solving the problem that traditional steady-state models cannot adequately characterize transient coupling failure processes. Furthermore, other studies have analyzed electrothermal distribution using thermo-coupling models or investigated the impact of external pressure on current sharing across multiple chips based on switching transient simulations, proposing corresponding packaging optimization methods.
[0004] However, existing research still has the following significant shortcomings: First, most models focus on rigid press-fit structures, with a severe lack of research on multiphysics modeling for elastically press-fit IGBTs. Elastically press-fit IGBTs typically use elastic elements such as disc springs to achieve adaptive pressure regulation, and their dynamic mechanical characteristics differ fundamentally from those of rigid press-fit structures. Existing models fail to effectively reflect the thermal characteristics of elastic elements. The creep and relaxation behavior under force coupling and their real-time impact on the pressure at the contact interface have limitations in simulating key phenomena such as pressure decay and contact degradation caused by temperature cycling in actual working conditions.
[0005] Secondly, existing modeling generally neglects the influence of contact surface roughness on the interfacial electrothermal properties. Actual assembly interfaces exhibit microscopic morphological inhomogeneities, and surface roughness directly affects the magnitude and distribution of contact resistance and contact thermal resistance. However, existing studies often assume ideal smooth contact at the interface, leading to deviations in calculating current distribution, heat conduction, and local temperature rise, and failing to accurately characterize the impact of interfacial contact behavior on the overall electrothermal stress of the device.
[0006] Therefore, a better solution is urgently needed. Summary of the Invention
[0007] In view of this, embodiments of this specification provide a method for constructing an IGBT electro-thermal-mechanical coupling transient model. One or more embodiments of this specification also relate to an apparatus for constructing an IGBT electro-thermal-mechanical coupling transient model, a computing device, a computer-readable storage medium, and a computer program, to address the technical deficiencies existing in the prior art.
[0008] According to a first aspect of the embodiments of this specification, a method for constructing an IGBT electro-thermal-mechanical coupling transient model is provided, comprising: Obtain the roughness parameters of the contact interface of the core contact component of the IGBT, and calculate the contact resistance and contact thermal resistance of the contact interface under a specific pressure based on the roughness parameters. A geometric model is established based on the dimensions of the IGBT, and a finite element model is generated. In the finite element model, the thermal and electrical contacts between the contact pairs are set according to the contact resistance and contact thermal resistance. Boundary conditions are configured for the electric field, thermal field, and structural mechanical field in the finite element model, and a two-way coupling relationship is established between the electric field, thermal field, and structural mechanical field to form a coupled model; The dynamic response of the IGBT under multi-physics coupling is obtained by performing transient solution on the coupled model.
[0009] In one possible implementation, the roughness parameters of the contact interface of the core contact component of the IGBT are obtained, including: The surface roughness of the contact surfaces of at least one of the following components of an IGBT—aluminum sheet, molybdenum sheet, IGBT chip, disc spring, conductive sheet, and copper cap—is measured using a surface roughness tester to determine the roughness parameters.
[0010] In one possible implementation, the contact resistance and contact thermal resistance of each contact interface under a specific pressure are calculated, including: The contact resistance and contact thermal resistance are determined by calculation based on contact pressure, material microhardness, roughness parameters and relative surface slope.
[0011] In one possible implementation, the boundary conditions for the electric field include: A ground potential is set on the emitter side, and a current excitation or voltage excitation is applied on the collector side.
[0012] In one possible implementation, the boundary conditions for the thermal field include: The convective heat transfer coefficient is set on the surface that comes into contact with the external heat dissipation environment.
[0013] In one possible implementation, the boundary conditions for configuring the structural mechanical field include: A load simulating clamping force is applied to the collector side surface, a fixed constraint is applied to the emitter side surface, and a displacement constraint is applied to the disc spring.
[0014] In one possible implementation, the bidirectional coupling relationship includes: The Joule heat generated in the electric field is input into the thermal field as a heat source. Temperature changes in a thermal field affect the stress and deformation of a structural mechanical field through the thermal expansion effect; The deformation of the structural mechanical field and the change in contact pressure provide feedback to adjust the contact resistance and contact thermal resistance of the contact interface, thereby affecting the electric and thermal fields.
[0015] According to a second aspect of the embodiments of this specification, an apparatus for constructing an IGBT electro-thermal-mechanical coupling transient model is provided, comprising: The parameter acquisition module is configured to acquire the roughness parameters of the contact interface of the core contact component of the IGBT, and calculate the contact resistance and contact thermal resistance of the contact interface under a specific pressure based on the roughness parameters. The model building module is configured to build a geometric model based on the dimensions of the IGBT, generate a finite element model, and set the thermal and electrical contacts between the contact pairs based on the contact resistance and contact thermal resistance in the finite element model. The boundary conditions module is configured to apply boundary conditions to the electric field, thermal field, and structural mechanical field in the finite element model, and to establish a two-way coupling relationship between the electric field, thermal field, and structural mechanical field to form a coupled model. The model solving module is configured to perform transient solutions on the coupled model to obtain the dynamic response of the IGBT under multi-physics coupling.
[0016] According to a third aspect of the embodiments of this specification, a computing device is provided, comprising: Memory and processor; The memory is used to store computer-executable instructions, and the processor is used to execute the computer-executable instructions. When the computer-executable instructions are executed by the processor, the steps of the above-described method for constructing the IGBT electro-thermal-mechanical coupling transient model are implemented.
[0017] According to a fourth aspect of the embodiments of this specification, a computer-readable storage medium is provided that stores computer-executable instructions, which, when executed by a processor, implement the steps of the method for constructing the above-described IGBT electro-thermal-mechanical coupling transient model.
[0018] According to a fifth aspect of the embodiments of this specification, a computer program is provided, wherein when the computer program is executed in a computer, it causes the computer to perform the steps of the method for constructing the IGBT electro-thermal-mechanical coupling transient model described above.
[0019] This specification provides a method and apparatus for constructing an IGBT electro-thermal-mechanical coupling transient model. The method includes: obtaining the roughness parameters of the contact interface of the core contact component of the IGBT; calculating the contact resistance and contact thermal resistance of the contact interface under a specific pressure based on the roughness parameters; establishing a geometric model according to the dimensions of the IGBT, generating a finite element model; setting the thermal and electrical contacts between contact pairs in the finite element model based on the contact resistance and contact thermal resistance; configuring boundary conditions for the electric field, thermal field, and structural mechanical field in the finite element model, and establishing a bidirectional coupling relationship between the electric field, thermal field, and structural mechanical field to form a coupled model; and performing transient solution on the coupled model to obtain the dynamic response of the IGBT under multi-physics coupling. By measuring the surface roughness of the contact surface and quantitatively calculating the interface contact parameters, the microstructure and macroscopic electrical properties are combined. hot By associating force behavior, a refined description of the characteristics of the elastic compression interface is achieved. Attached Figure Description
[0020] Figure 1 This is a flowchart illustrating a method for constructing an IGBT electro-thermal-mechanical coupling transient model according to one embodiment of this specification; Figure 2 This is a schematic diagram of the simulation model principle of a method for constructing an IGBT electro-thermal-mechanical coupling transient model according to an embodiment of this specification; Figure 3 This is a schematic diagram of a device for constructing an IGBT electro-thermal-mechanical coupling transient model according to one embodiment of this specification; Figure 4 This is a structural block diagram of a computing device provided in one embodiment of this specification. Detailed Implementation
[0021] Many specific details are set forth in the following description to provide a full understanding of this specification. However, this specification can be implemented in many other ways than those described herein, and those skilled in the art can make similar extensions without departing from the spirit of this specification. Therefore, this specification is not limited to the specific implementations disclosed below.
[0022] The terminology used in one or more embodiments of this specification is for the purpose of describing particular embodiments only and is not intended to be limiting of the one or more embodiments of this specification. The singular forms “a” and “the” as used in one or more embodiments of this specification and the appended claims are also intended to include the plural forms, unless the context clearly indicates otherwise. It should also be understood that the term “and / or” as used in one or more embodiments of this specification refers to and includes any or all possible combinations of one or more associated listed items.
[0023] It should be understood that although the terms first, second, etc., may be used to describe various information in one or more embodiments of this specification, such information should not be limited to these terms. These terms are only used to distinguish information of the same type from one another. For example, first may also be referred to as second without departing from the scope of one or more embodiments of this specification, and similarly, second may also be referred to as first. Depending on the context, the word "if" as used herein may be interpreted as "when," "when," or "in response to a determination."
[0024] This specification provides a method for constructing an IGBT electro-thermal-mechanical coupling transient model. This specification also relates to an apparatus for constructing an IGBT electro-thermal-mechanical coupling transient model, a computing device, and a computer-readable storage medium, which will be described in detail in the following embodiments.
[0025] See Figure 1 , Figure 1 A flowchart is shown illustrating a method for constructing an IGBT electro-thermal-mechanical coupling transient model according to an embodiment of this specification, specifically including the following steps.
[0026] Step 101: Obtain the roughness parameters of the contact interface of the core contact component of the IGBT, and calculate the contact resistance and contact thermal resistance of the contact interface under a specific pressure based on the roughness parameters.
[0027] In practical applications, a surface roughness tester is used to measure the surface of all contact components inside the IGBT to obtain surface morphology data—roughness. Based on formulas, the contact resistance and contact thermal resistance of each contact interface under specific pressure are calculated.
[0028] In one possible implementation, obtaining the roughness parameters of the contact interface of the core contact component of the IGBT includes: using a surface roughness tester to measure the roughness of the contact surface of at least one of the following components: aluminum sheet, molybdenum sheet, IGBT chip, disc spring, conductive sheet, and copper cap, and determining the roughness parameters.
[0029] In practical applications, a surface roughness tester is used to measure the roughness of the upper and lower surfaces of aluminum sheets, molybdenum sheets, IGBT chip surfaces, disc spring surfaces, conductive sheets, and copper cap surfaces. The measured parameters are then substituted into formulas to calculate the contact resistance and contact thermal resistance.
[0030] In one possible implementation, the contact resistance and contact thermal resistance of each contact interface under a specific pressure are calculated, including: determining the contact resistance and contact thermal resistance based on contact pressure, material microhardness, roughness parameters and relative surface slope.
[0031] Specifically, the formulas for calculating contact resistance and contact thermal resistance are as follows:
[0032]
[0033]
[0034]
[0035] in It is the contact thermal conductivity. It is the contact conductivity. It is the harmonic mean of the thermal conductivity at the contact interface. It is the harmonic mean of the conductivity at the contact interface. It is the relative slope of the surface. It is the relative surface roughness. To contact pressure, The microhardness of the material.
[0036] This application measures the roughness of each component of the IGBT and applies it to the calculation of contact resistance and contact thermal resistance, making the operation of the coupling model closer to the actual operating conditions.
[0037] Step 102: Establish a geometric model based on the dimensions of the IGBT, generate a finite element model, and set the thermal and electrical contacts between the contact pairs in the finite element model according to the contact resistance and contact thermal resistance.
[0038] In practical applications, a finite element multiphysics model based on measured parameters is constructed. In SolidWorks, a geometric model including elastic structures such as springs is established based on the actual dimensions of the device. After generating the finite element model, accurate material properties are set for each component. The core step in model construction lies in the definition of contact pairs: the contact resistance and contact thermal resistance calculated in the previous step are assigned to the corresponding contact pairs, thereby constructing a contact model that reflects the actual interface characteristics at both electrical and thermal levels.
[0039] See Figure 2 This embodiment builds a simulation model based on the relationship between the three physical fields of electricity, heat, and force, in which the three influence each other: When current flows through a device in an electric field, it generates power consumption (Joule heating). This power consumption is directly input into the thermal field as the main heat source, causing the temperature to rise. The temperature distribution of the thermal field will change the conductivity of the material, and the change in conductivity will in turn affect the current distribution and potential distribution in the electric field, thereby changing the heating power.
[0040] Temperature changes cause thermal expansion of materials. Since the coefficients of thermal expansion of each layer of material are different, thermal stress is generated in the structure, which constitutes an important load of the mechanical stress field. The deformation and contact pressure changes caused by the mechanical stress field will significantly change the contact thermal resistance of the contact interface, thereby affecting the heat conduction path and efficiency.
[0041] Changes in contact pressure in a mechanical stress field directly affect the contact resistance at the contact interface. Changes in contact resistance further affect the overall circuit's resistance distribution, current magnitude, and potential distribution. Local heating caused by the electric field indirectly affects mechanical stress through thermal stress, thus forming an indirect coupling chain of electricity, heat, and force.
[0042] Specifically, after creating a geometric model in SolidWorks 3D modeling software and generating a finite element model, material properties are set, mainly including density, elastic modulus, Poisson's ratio, coefficient of thermal expansion, thermal conductivity, specific heat capacity, and electrical conductivity.
[0043] This application realizes the transformation of real physical devices into digital simulation objects with complete material properties, laying the necessary physical property foundation for subsequent electro-thermal-mechanical multiphysics coupling calculations.
[0044] Step 103: Configure boundary conditions for the electric field, thermal field and structural mechanical field in the finite element model, and establish a two-way coupling relationship between the electric field, thermal field and structural mechanical field to form a coupled model.
[0045] In practical applications, boundary conditions for multiple physical fields are set respectively: in the electric field, grounding is set on the emitter side and excitation current is applied on the collector side; in the thermal field, convective heat transfer coefficient is set on the surface of the molybdenum-copper base plate in contact with the heat dissipation environment; in the structural field, a surface load simulating external clamping force is applied to the surface of the collector side, a fixed constraint is applied to the emitter side, and displacement constraints are applied to components such as disc springs.
[0046] In one possible implementation, configuring boundary conditions for the electric field includes setting a ground potential on the emitter side and applying current or voltage excitation on the collector side.
[0047] Specifically, the two contacting surfaces are set as a contact pair, and the electrical and thermal contacts are set up in the contact pair according to the calculated contact resistance and contact thermal resistance. The potential ground is set on the molybdenum copper base plate on the emitter side, and the excitation current is applied to the collector surface.
[0048] In one possible implementation, configuring boundary conditions for the thermal field includes setting a convective heat transfer coefficient on the surface in contact with the external heat dissipation environment.
[0049] Specifically, a convective heat transfer coefficient is set on the surface of the molybdenum-copper base plate on both sides of the device that contacts the heat sink.
[0050] In one possible implementation, the boundary conditions for configuring the structural mechanical field include: applying a load simulating clamping force to the collector side surface, applying a fixed constraint to the emitter side surface, and applying a displacement constraint to the disc spring.
[0051] Specifically, a surface load is applied to the surface of the collector-side component, a fixed constraint is applied to the surface of the emitter-side component, and corresponding displacement constraints are applied to the disc spring, pin, etc.
[0052] The boundary conditions and contact characteristics set in this application enable the reproduction of the electrical connection, heat dissipation environment and mechanical constraint state of the actual operation of the press-fit IGBT in the simulation model, providing accurate working conditions for multi-physics coupling solutions.
[0053] In one possible implementation, the bidirectional coupling relationship includes: Joule heat generated in the electric field is input to the thermal field as a heat source; temperature changes in the thermal field affect the stress and deformation of the structural mechanical field through thermal expansion; deformation and contact pressure changes in the structural mechanical field provide feedback to adjust the contact resistance and contact thermal resistance of the contact interface, thereby affecting the electric and thermal fields.
[0054] In practical applications, the interaction paths between various physical fields are clearly defined: the Joule heat generated by the electric field is used as a heat source to input the thermal field, and the temperature change caused by the thermal field is transformed into thermal stress and deformation of the structural field through the thermal expansion effect. This deformation then feeds back in real time and changes the electrothermal properties of the contact interface, thereby dynamically affecting the electric field and the thermal field.
[0055] Step 104: Perform transient solution on the coupled model to obtain the dynamic response of the IGBT under multi-physics coupling.
[0056] In practical applications, the coupling relationship between multiple physics fields is established. By meshing this coupled model and setting the transient time step, the dynamic response of the device under the combined action of multiple electrical, thermal, and mechanical fields can be obtained, accurately simulating its junction temperature fluctuations and other conditions under transient operating conditions.
[0057] Specifically, after the coupled model is established, the model is meshed and the transient time step is set. Finally, the solver is started to perform transient calculations. Through alternating iterations of multiple fields within each time step until convergence, the dynamic response of the device under the combined action of multiple physical fields is obtained.
[0058] This application realizes multi-physics fully coupled transient simulation, accurately revealing the transient behavior of the device under the dynamic interaction of electric, thermal, and mechanical fields.
[0059] This specification provides a method and apparatus for constructing a transient model of IGBT electro-thermal-mechanical coupling. The method includes: obtaining the roughness parameters of the contact interface of the core contact component of the IGBT; calculating the contact resistance and contact thermal resistance of the contact interface under a specific pressure based on the roughness parameters; establishing a geometric model according to the dimensions of the IGBT, generating a finite element model; setting the thermal and electrical contacts between the contact pairs in the finite element model according to the contact resistance and contact thermal resistance; configuring boundary conditions for the electric field, thermal field, and structural mechanical field in the finite element model, and establishing a bidirectional coupling relationship between the electric field, thermal field, and structural mechanical field to form a coupled model; and performing transient solution on the coupled model to obtain the dynamic response of the IGBT under the coupling of multiple physics fields. By measuring the surface roughness of the contact and quantitatively calculating the interface contact parameters, the microscopic morphology is correlated with the macroscopic electro-thermal-mechanical behavior, achieving a refined description of the characteristics of the elastic compression interface. This method, within a unified multiphysics coupling framework, comprehensively considers the pressure sensitivity of contact resistance and thermal resistance, the influence of temperature field on structural stress, and the feedback effect of mechanical deformation on electrothermal characteristics, thereby significantly improving the accuracy of transient coupling simulation. The model can more realistically reflect the junction temperature fluctuations, stress distribution, and contact state evolution of devices under dynamic operating conditions, providing a more effective digital twin approach for reliability analysis, failure mechanism research, and packaging optimization.
[0060] Corresponding to the above method embodiments, this specification also provides embodiments of an apparatus for constructing an IGBT electro-thermal-mechanical coupling transient model. Figure 3 This specification illustrates a schematic diagram of a device for constructing an IGBT electro-thermal-mechanical coupling transient model according to one embodiment. Figure 3 As shown, the device includes: The parameter acquisition module 301 is configured to acquire the roughness parameters of the contact interface of the core contact component of the IGBT, and calculate the contact resistance and contact thermal resistance of the contact interface under a specific pressure based on the roughness parameters. The model building module 302 is configured to build a geometric model based on the dimensions of the IGBT, generate a finite element model, and set the thermal and electrical contacts between the contact pairs based on the contact resistance and contact thermal resistance in the finite element model. Boundary condition module 303 is configured to configure boundary conditions for the electric field, thermal field and structural mechanical field in the finite element model, and establish a two-way coupling relationship between the electric field, thermal field and structural mechanical field to form a coupled model; The model solving module 304 is configured to perform transient solutions on the coupled model to obtain the dynamic response of the IGBT under multi-physics coupling.
[0061] In one possible implementation, the roughness parameters of the contact interface of the core contact component of the IGBT are obtained, including: The surface roughness of the contact surfaces of at least one of the following components of an IGBT—aluminum sheet, molybdenum sheet, IGBT chip, disc spring, conductive sheet, and copper cap—is measured using a surface roughness tester to determine the roughness parameters.
[0062] In one possible implementation, the contact resistance and contact thermal resistance of each contact interface under a specific pressure are calculated, including: The contact resistance and contact thermal resistance are determined by calculation based on contact pressure, material microhardness, roughness parameters and relative surface slope.
[0063] In one possible implementation, the boundary conditions for the electric field include: A ground potential is set on the emitter side, and a current excitation or voltage excitation is applied on the collector side.
[0064] In one possible implementation, the boundary conditions for the thermal field include: The convective heat transfer coefficient is set on the surface that comes into contact with the external heat dissipation environment.
[0065] In one possible implementation, the boundary conditions for configuring the structural mechanical field include: A load simulating clamping force is applied to the collector side surface, a fixed constraint is applied to the emitter side surface, and a displacement constraint is applied to the disc spring.
[0066] In one possible implementation, the bidirectional coupling relationship includes: The Joule heat generated in the electric field is input into the thermal field as a heat source. Temperature changes in a thermal field affect the stress and deformation of a structural mechanical field through the thermal expansion effect; The deformation of the structural mechanical field and the change in contact pressure provide feedback to adjust the contact resistance and contact thermal resistance of the contact interface, thereby affecting the electric and thermal fields.
[0067] The above is a schematic scheme of an IGBT electro-thermal-mechanical coupling transient model construction device according to this embodiment. It should be noted that the technical solution of this IGBT electro-thermal-mechanical coupling transient model construction device belongs to the same concept as the technical solution of the IGBT electro-thermal-mechanical coupling transient model construction method described above. Details not described in detail in the technical solution of the IGBT electro-thermal-mechanical coupling transient model construction device can be found in the description of the technical solution of the IGBT electro-thermal-mechanical coupling transient model construction method described above.
[0068] Figure 4 A structural block diagram of a computing device 400 according to one embodiment of this specification is shown. The components of the computing device 400 include, but are not limited to, a memory 410 and a processor 420. The processor 420 is connected to the memory 410 via a bus 430, and a database 450 is used to store data.
[0069] The computing device 400 also includes an access device 440, which enables the computing device 400 to communicate via one or more networks 460. Examples of these networks include Public Switched Telephone Network (PSTN), Local Area Network (LAN), Wide Area Network (WAN), Personal Area Network (PAN), or combinations of communication networks such as the Internet. The access device 440 may include one or more of any type of wired or wireless network interface (e.g., a network interface card (NIC)), such as an IEEE 802.11 Wireless Local Area Network (WLAN) wireless interface, a Wi-MAX (Worldwide Interoperability for Microwave Access) interface, an Ethernet interface, a Universal Serial Bus (USB) interface, a cellular network interface, a Bluetooth interface, or a Near Field Communication (NFC) interface.
[0070] In one embodiment of this specification, the aforementioned components of the computing device 400 and Figure 4 Other components, not shown, can also be connected to each other, for example, via a bus. It should be understood that... Figure 4 The block diagram of the computing device shown is for illustrative purposes only and is not intended to limit the scope of this specification. Those skilled in the art can add or replace other components as needed.
[0071] The computing device 400 can be any type of stationary or mobile computing device, including mobile computers or mobile computing devices (e.g., tablet computers, personal digital assistants, laptop computers, notebook computers, netbooks, etc.), mobile phones (e.g., smartphones), wearable computing devices (e.g., smartwatches, smart glasses, etc.) or other types of mobile devices, or stationary computing devices such as desktop computers or personal computers (PCs). The computing device 400 can also be a mobile or stationary server.
[0072] The processor 420 executes computer-executable instructions, which, when executed by the processor, implement the steps of the method for constructing the IGBT electro-thermal-mechanical coupling transient model described above. The above is an illustrative scheme of a computing device according to this embodiment. It should be noted that the technical solution of this computing device and the technical solution of the method for constructing the IGBT electro-thermal-mechanical coupling transient model described above belong to the same concept. Details not described in detail in the technical solution of the computing device can be found in the description of the technical solution of the method for constructing the IGBT electro-thermal-mechanical coupling transient model described above.
[0073] An embodiment of this specification also provides a computer-readable storage medium storing computer-executable instructions that, when executed by a processor, implement the steps of the above-described method for constructing the IGBT electro-thermal-mechanical coupling transient model.
[0074] The above is an illustrative scheme of a computer-readable storage medium according to this embodiment. It should be noted that the technical solution of this storage medium belongs to the same concept as the technical solution of the above-described method for constructing the IGBT electro-thermal-mechanical coupling transient model. For details not described in detail in the technical solution of the storage medium, please refer to the description of the technical solution of the above-described method for constructing the IGBT electro-thermal-mechanical coupling transient model.
[0075] An embodiment of this specification also provides a computer program, wherein when the computer program is executed in a computer, it causes the computer to perform the steps of the above-described method for constructing the IGBT electro-thermal-mechanical coupling transient model.
[0076] The above is an illustrative scheme of a computer program according to this embodiment. It should be noted that the technical solution of this computer program and the technical solution of the above-described method for constructing the IGBT electro-thermal-mechanical coupling transient model belong to the same concept. For details not described in detail in the technical solution of the computer program, please refer to the description of the technical solution of the above-described method for constructing the IGBT electro-thermal-mechanical coupling transient model.
[0077] The foregoing has described specific embodiments of this specification. Other embodiments are within the scope of the appended claims. In some cases, the actions or steps recited in the claims may be performed in a different order than that shown in the embodiments and may still achieve the desired result. Furthermore, the processes depicted in the drawings do not necessarily require the specific or sequential order shown to achieve the desired result. In some embodiments, multitasking and parallel processing are possible or may be advantageous.
[0078] The computer instructions include computer program code, which may be in the form of source code, object code, executable file, or certain intermediate forms. The computer-readable medium may include any entity or device capable of carrying the computer program code, recording media, USB flash drives, portable hard drives, magnetic disks, optical disks, computer memory, read-only memory (ROM), random access memory (RAM), electrical carrier signals, telecommunication signals, and software distribution media, etc. It should be noted that the content included in the computer-readable medium may be appropriately added to or subtracted according to the requirements of legislation and patent practice in the jurisdiction. For example, in some jurisdictions, according to legislation and patent practice, computer-readable media may not include electrical carrier signals and telecommunication signals.
[0079] It should be noted that, for the sake of simplicity, the foregoing method embodiments are all described as a series of actions. However, those skilled in the art should understand that the embodiments in this specification are not limited to the described order of actions, because according to the embodiments in this specification, some steps can be performed in other orders or simultaneously. Furthermore, those skilled in the art should also understand that the embodiments described in this specification are all preferred embodiments, and the actions and modules involved are not necessarily essential to the embodiments in this specification.
[0080] In the above embodiments, the descriptions of each embodiment have different focuses. For parts not described in detail in a certain embodiment, please refer to the relevant descriptions of other embodiments.
[0081] The preferred embodiments disclosed above are merely illustrative of this specification. The optional embodiments do not exhaustively describe all details, nor do they limit the invention to the specific implementations described. Clearly, many modifications and variations can be made based on the embodiments described herein. These embodiments are selected and specifically described in this specification to better explain the principles and practical applications of the embodiments, thereby enabling those skilled in the art to better understand and utilize this specification. This specification is limited only by the claims and their full scope and equivalents.
Claims
1. A method for constructing an IGBT electro-thermal-mechanical coupling transient model, characterized in that, include: Obtain the roughness parameters of the contact interface of the core contact component of the IGBT, and calculate the contact resistance and contact thermal resistance of the contact interface under a specific pressure based on the roughness parameters. A geometric model is established based on the dimensions of the IGBT, and a finite element model is generated. In the finite element model, thermal and electrical contacts between contact pairs are set according to the contact resistance and the contact thermal resistance. In the finite element model, boundary conditions are configured for the electric field, thermal field, and structural mechanical field, and a two-way coupling relationship is established between the electric field, the thermal field, and the structural mechanical field to form a coupled model; The dynamic response of the IGBT under multi-physics coupling is obtained by performing transient solution on the coupling model.
2. The method according to claim 1, characterized in that, Obtaining the roughness parameters of the contact interface of the core contact component of the IGBT includes: The surface roughness of the contact surfaces of at least one of the components of the IGBT, namely the aluminum sheet, molybdenum sheet, IGBT chip, disc spring, conductive sheet and copper cap, is measured using a surface roughness tester to determine the roughness parameters.
3. The method according to claim 1, characterized in that, The calculation of the contact resistance and contact thermal resistance of each contact interface under a specific pressure includes: The contact resistance and contact thermal resistance are determined by calculation based on contact pressure, material microhardness, roughness parameters, and relative surface slope.
4. The method according to claim 1, characterized in that, The boundary conditions for the electric field include: A ground potential is set on the emitter side, and a current excitation or voltage excitation is applied on the collector side.
5. The method according to claim 1, characterized in that, The boundary conditions for the thermal field include: The convective heat transfer coefficient is set on the surface that comes into contact with the external heat dissipation environment.
6. The method according to claim 1, characterized in that, The boundary conditions for configuring the structural mechanical field include: A load simulating clamping force is applied to the collector side surface, a fixed constraint is applied to the emitter side surface, and a displacement constraint is applied to the disc spring.
7. The method according to claim 1, characterized in that, The bidirectional coupling relationship includes: The Joule heat generated in the electric field is input into the thermal field as a heat source. The temperature change of the thermal field affects the stress and deformation of the structural mechanical field through the thermal expansion effect; The deformation of the structural mechanical field and the change in contact pressure provide feedback to adjust the contact resistance and contact thermal resistance of the contact interface, thereby affecting the electric field and the thermal field.
8. A device for constructing an IGBT electro-thermal-mechanical coupling transient model, characterized in that, include: The parameter acquisition module is configured to acquire the roughness parameters of the contact interface of the core contact component of the IGBT, and calculate the contact resistance and contact thermal resistance of the contact interface under a specific pressure based on the roughness parameters. The model building module is configured to build a geometric model based on the dimensions of the IGBT and generate a finite element model, in which thermal and electrical contacts between contact pairs are set according to the contact resistance and the contact thermal resistance in the finite element model. The boundary condition module is configured to configure boundary conditions for the electric field, thermal field and structural mechanical field in the finite element model, and to establish a two-way coupling relationship between the electric field, the thermal field and the structural mechanical field to form a coupled model; The model solving module is configured to perform transient solution on the coupled model to obtain the dynamic response of the IGBT under multi-physics coupling.
9. A computing device, characterized in that, include: Memory and processor; The memory is used to store computer-executable instructions, and the processor is used to execute the computer-executable instructions. When the computer-executable instructions are executed by the processor, they implement the steps of the method for constructing the IGBT electro-thermal-mechanical coupling transient model according to any one of claims 1 to 7.
10. A computer-readable storage medium storing computer-executable instructions that, when executed by a processor, implement the steps of the method for constructing the IGBT electro-thermal-mechanical coupling transient model according to any one of claims 1 to 7.