Power semiconductor module with molded body and method for producing same
By using a frame-like molded body and web plate connection design, combined with material bonding and snap-fit connection, the electrical switching and installation of power semiconductor modules are optimized, solving the problems of electrical characteristics and installation in the existing technology, and achieving more efficient electrical switching and simplified manufacturing.
Patent Information
- Authority / Receiving Office
- CN · China
- Patent Type
- Applications(China)
- Current Assignee / Owner
- SEMIKRON DANFOSS GMBH
- Filing Date
- 2025-11-03
- Publication Date
- 2026-05-08
AI Technical Summary
There is room for improvement in the electrical characteristics and installation of existing power semiconductor modules, especially in terms of connection structure and material bonding.
The frame-shaped molded body includes first and second frame sections connected by a web. Connecting elements are connected to the substrate conductor track and web by material bonding. Tight connections are achieved using snap-on latches or other bonding methods, and electrical switching is optimized through the cut-out design of the printed circuit board.
It improves the electrical switching speed and installation efficiency of power semiconductor modules, enhances electrical characteristics, and simplifies the manufacturing process.
Smart Images

Figure CN122003165A_ABST
Abstract
Description
Technical Field
[0001] This invention describes a power semiconductor module and a method for manufacturing the same. The power semiconductor module has a frame-shaped molded body in which a first substrate is disposed and a first connecting element is provided. The molded body has a first frame segment and a second frame segment, the second frame segment preferably being positioned opposite to the first frame segment. The first frame segment and the second frame segment are connected by a web. Background Technology
[0002] DE 10 2021 134 003 A1 discloses a power semiconductor module and a method for manufacturing the same. The power semiconductor module has a housing, a switching device disposed in the housing, and a plurality of connecting elements, wherein each connecting element has a first connecting section and a second connecting section. The first connecting section is disposed in the housing in a form-fit manner, and the second connecting section is disposed in the housing in a material bonding or press-fit manner. Summary of the Invention
[0003] In light of the above, the present invention is based on the objective of providing a power semiconductor module with improved electrical characteristics and improved mounting, and a method for manufacturing the same.
[0004] According to the present invention, this objective is achieved by a power semiconductor module having a frame-shaped molded body having a first substrate disposed therein and having a first connecting element, the first substrate having a first substrate conductor track and a second substrate conductor track having a normal direction, wherein the molded body has a first frame segment and a second frame segment, the second frame segment preferably being positioned opposite to the first frame segment, wherein the first frame segment and the second frame segment are connected by a web, wherein the first connecting element has a first contact segment, a first mounting segment and a first connecting segment, the first contact segment being electrically connected to an associated segment of the first substrate conductor track in a material-bonded manner, the first mounting segment being connected to the web, and the first connecting segment being configured for external connection.
[0005] Preferably, the molded body and the web are formed as one piece.
[0006] Also preferably, the molded body and the web are formed as two pieces, preferably made of the same material, and preferably connected to each other by means of a snap-fit latch connection.
[0007] It may be advantageous if the second connecting element has a second contact section electrically connected to an associated section of the second conductor track in a material-bonded manner, the second connecting element has a second mounting section and a second connecting section, the second mounting section being connected to the web, and the second connecting section being configured for external connection.
[0008] It may also be preferred if the corresponding contact segment (if present) is kept laterally away from the longitudinal direction of the corresponding connecting element, wherein the longitudinal direction is aligned with the normal direction.
[0009] Alternatively, the first installation section and the second installation section are arranged to be far apart from each other.
[0010] Furthermore, it may be advantageous if a third conductor track is arranged on the first or second substrate, and a power semiconductor component electrically connected to the first or second conductor track by means of a connection device is arranged on this third conductor track.
[0011] It may be advantageous if the connecting device is observed to partially overlap with a segment of the first or second connecting element in the normal direction.
[0012] If the metal body 6 having a third contact section has a third mounting section, and preferably a fourth contact section, wherein the third contact section is electrically connected in a material-bonded manner to an associated section 360 of a conductor track in one of the substrates or to the metallized surface of the power semiconductor component, the third mounting section being connected to the web, and the fourth contact section being electrically connected in a material-bonded manner to an associated section of a conductor track in one of the substrates or to the metallized surface of the power semiconductor component, then this is also preferred.
[0013] It may be advantageous if the third and fourth contact sections are connected to the same conductor track.
[0014] It may also be advantageous if all mounting sections (if present) are connected to the web by press fit, form fit, or material bonding.
[0015] It may be preferable if the printed circuit board has corresponding elongated cutouts for the first and second connection sections, the printed circuit board being arranged above the web in the normal direction, wherein the wide sides of the cutouts are arranged next to each other.
[0016] According to the present invention, the above objective is also achieved by a method for manufacturing the above-described power semiconductor module, the method comprising the following steps in a specified order: a) Arrange the molded body to form a first substrate, wherein the web is integrally formed with the molded body and has a first connecting element; b) Materially bond the first contact section of the first connecting element to the associated section of the first conductor track.
[0017] According to the present invention, the above objective is also achieved by a method for manufacturing the above-described power semiconductor module, the method comprising the following steps in a specified order: a) Arrange the molded body to form a first substrate, wherein the web is integrally formed with the molded body and has a first connecting element; b) Materially bond the first contact section of the first connecting element to the associated section of the first conductor track.
[0018] According to the present invention, the above objective is also achieved by a method for manufacturing the above-described power semiconductor module, the method comprising the following steps in a specified order: a) Arrange the molded body to form a first substrate; b) Arrange the web plate together with the first connecting element 4, and connect the web plate to the molded body; c) Materially bond the first contact section of the first connecting element to the associated section of the first conductor track.
[0019] It is preferable if a second connecting element, and preferably a metal body, is disposed on the web. It is also preferable that the material bonding is implemented as an adhesive bond, brazing, sintering, or welding connection.
[0020] Of course, multiple features or groups of features (e.g., substrate) mentioned in the singular may appear multiple times in the power semiconductor module according to the invention, unless this is explicitly excluded or excluded itself or is inconsistent with the concept of the invention.
[0021] It should be understood that the various embodiments of the present invention, whether referenced in conjunction with the power semiconductor module or the method, can be implemented individually or in any combination to achieve improvements. In particular, the features referenced and explained above and below can be used not only in the given combinations, but also in other combinations or individually, without departing from the scope of the invention. Attached Figure Description
[0022] Further explanations, advantageous details, and features of the invention derive from the following description of exemplary embodiments of the invention or relevant portions thereof, which in... Figures 1 to 7 It is shown schematically in the diagram.
[0023] Figure 1 A plan view of a first substrate and a second substrate of a power semiconductor module according to the present invention is shown.
[0024] Figure 2 A plan view of a molded body of a power semiconductor module according to the present invention is shown, the molded body having connecting elements and a metal body.
[0025] Figure 3 A plan view of a power semiconductor module according to the present invention is shown.
[0026] Figure 4 The side view shows details of the molded body of the power semiconductor module according to the invention, having a web and connecting elements.
[0027] Figure 5 A plan view of a first substrate having a connection device is shown in detail of a power semiconductor module according to the present invention.
[0028] Figure 6 A three-dimensional view of a molded body having connecting elements of a power semiconductor module according to the present invention is shown.
[0029] Figure 7 A plan view of a molded body with connecting elements is shown in detail of a power semiconductor module according to the present invention. Detailed Implementation
[0030] Figure 1 A first embodiment of a symmetrical first substrate 3 and second substrate 300 of a power semiconductor module 1 according to the present invention is shown in a plan view. Viewed in the x-direction, the first substrate 3 and the second substrate 300 are arranged at a distance from each other. The first substrate 3 has commercially available first, second, third, fourth, and fifth substrate conductor tracks 30, 32, 36, and 38, which are formed of copper and are also arranged at a distance from each other. The second substrate 300 is formed similarly to the first substrate 3 and therefore has the same structure.
[0031] Viewed in the y-direction, the first substrate conductor track 30 (here, the AC conductor track) is positioned below the second substrate conductor track 32 (here, the TOP side), and the fourth substrate conductor track 38 (here, the DC+ side) is positioned above the first substrate conductor track 30. The fourth substrate conductor track 38 surrounds the second substrate conductor track 32. The third substrate conductor track 36 (here, the DC- side) surrounds the first substrate conductor track 30 and the fourth substrate conductor track 38 in a frame-like manner. The fifth substrate conductor track (here, the BOT side) is also surrounded by the first substrate conductor track 30 in a frame-like manner.
[0032] The first substrate conductor track 30 has a first section 340 on which a first connecting element 4, such as an AC PressPin, can be arranged in the positive z-direction. The first section 340 is arranged approximately centrally on the first substrate 3. A second section 350 for a second connecting element 5 (e.g., a gate press pin on the TOP side) is parallel to the first section 340 in the y-direction and is arranged on the second substrate conductor track 32. The second section 350 is also arranged centrally on the second substrate conductor track 32. The two connecting elements 4 and 5 are materially bonded and electrically connected to the corresponding sections 340 and 350 in the arranged state; see also [reference needed]. Figure 4 Furthermore, on the fifth substrate conductor track, which is parallel to the second substrate conductor track 32 in the y direction, connecting elements 4 and 5 (e.g., gate pressing pins on the BOT side) can be arranged on the section not shown here.
[0033] The third substrate conductor track 36 also has a third segment 360, which is designed such that a metal body 6, for example, serving as a DC connector, is arranged in the z-direction and is materially bonded and electrically connected to the substrate conductor track 36; in this respect, see also Figure 2 Alternatively, the third substrate conductor track 36 may also have more than one third segment 360.
[0034] On the first substrate conductor track 30 and the fourth substrate conductor track 38, in each case, two power semiconductor components 380, formed as IGBTs, are arranged on the lower edges of the respective substrate conductor tracks 30 and 38. When viewed in the y-direction, the two power semiconductor components 380 are symmetrically arranged side by side and electrically connected to the corresponding substrate conductor tracks 30 and 38 by sintering in a material bond manner. For example, the power semiconductor components 380 are arranged to rotate relative to the outer side of the substrate 3. The power semiconductor components 380 are arranged symmetrically at a certain distance from each other and do not contact each other. The power semiconductor components 380 on the first substrate conductor track 30 are arranged parallel to the power semiconductor components 380 on the third substrate conductor track 38.
[0035] Alternatively, the power semiconductor component 380 can also be soldered to the substrate conductor tracks 30, 38. Furthermore, the corresponding connection can also be formed using different material bonding methods, such as adhesive bonding. The power semiconductor component 380 can also be formed as a metal-oxide-semiconductor field-effect transistor (MOSFET).
[0036] Two power semiconductor components 380 on the fourth substrate conductor track 38 are each electrically connected to the first substrate conductor track 30 via two connecting devices 382 in a material-bonded manner. For example, the connecting devices 382 are formed as bonding strips. These bonding strips 382 are arranged at a distance from each other and extend toward the first segment 340 on the first substrate conductor track 30. Similarly, the two power semiconductor components 380 on the first substrate conductor track 30 are electrically connected and material-bonded to the third substrate conductor track 36 via two connecting devices 382, also formed as bonding strips. The two bonding strips 382 of the power semiconductor components 380 on the third substrate conductor track 36 are arranged parallel to the connecting devices 382 on the first substrate conductor track 30 and also extend toward each other.
[0037] The power semiconductor components 380 of the corresponding substrates 3 and 300 are further electrically connected to the second and fifth substrate conductor tracks 32 via corresponding connection devices 382 (not shown here for clarity). The upper power semiconductor component 380 is connected to the second substrate conductor track 32, and the lower power semiconductor component 380 is connected to the fifth substrate conductor track. The connection device 382 is formed as a bonding line, or alternatively, as a bonding strip. Furthermore, in each case, only one of the first or second power semiconductor components 380 can be connected to the corresponding substrate conductor track 32.
[0038] As an example, the material bonding of connecting devices 382, 384 to substrate conductor tracks 30, 36 is respectively formed as a welded connection using a laser welding process. Alternatively, this material bonding can also be implemented by brazing, adhesive bonding, or sintering.
[0039] The second substrate 300 has the same structure as the first substrate 3, and therefore has first, second, third, fourth, and fifth substrate conductor tracks 30, 32, 36, and 38, a first segment 340 for the first connecting element 4, a second segment 350 for the second connecting element 5, and four power semiconductor components 380 with connection devices 382. The second substrate 300 differs from the first substrate 3 in that it has a fourth segment 366, however, this fourth segment 366 is identical in structure, shape, and arrangement to the third segment 360. The second substrate 300 is also arranged mirror-symmetrically with respect to the first substrate 3, such that the third segment on the third substrate conductor track 36 of the first substrate 3 and the fourth segment 366 on the third substrate conductor track 36 of the second substrate 3 are arranged side-by-side in the x-direction, so that the two substrates 3 and 300 are electrically connected to each other by means of the metal body 6. Here, the substrate conductor tracks, power semiconductor components, and connection devices are also formed and arranged symmetrically with respect to each other, as in the first substrate 3.
[0040] Figure 2 A top view is shown of an embodiment of a frame-shaped molded body 2 (shown as shaded lines) of a power semiconductor module 1 having connecting elements 4, 5 and a metal body 6 according to the present invention. Viewed in the y-direction, the molded body 2 has a first frame segment 20 and a second frame segment 22 opposite to the first frame segment. The molded body 2 also has an upper frame segment and a lower frame segment in the x-direction, which connect the frame segments 20, 22 arranged in the y-direction to each other. The four outer frame segments 20, 22 together form a cuboid rectangular frame.
[0041] Here, the first frame segment 20 and the second frame segment 22 are connected to each other by two webs 24 arranged along the x-direction and spaced apart from each other. These two webs are arranged between the upper outer frame segment and the lower outer frame segment. The molded body 2 also has a third web 26 in the x-direction, which is centrally arranged between the first frame segment 20 and the second frame segment 22, and similarly connects the upper frame segment and the lower frame segment to each other.
[0042] The frame segments 20, 22 and the webs 24, 26 are integrally formed from plastic, for example by injection molding. They form a mesh type, such that there are free regions between the frame segments and the webs, which can be filled, for example, with silicone gel. Alternatively, these free regions can be filled with another filler or left unfilled.
[0043] Furthermore, the frame segments 20, 22 and the webs 24 or 24, 26 can also be formed as two pieces, i.e., formed from two or more parts. For example, they can be formed from the same material, such as plastic; alternatively, they can be formed from different materials. The frame segments 20, 22 and the webs 24 or more webs 24, 26 can be connected to each other here by means of, for example, snap-fit latches, so that they also form a grid-like arrangement. Alternatively, they can also be connected to each other by material bonding (such as, for example, adhesive bonding). In this embodiment, the resulting free areas can also be filled with filler, such as, for example, silicone resin.
[0044] Alternatively, the frame-shaped molded body 2 may have only two frame segments 20, 22 and one web 24, 26 or more than two webs 24, 26.
[0045] The molded body 2 here has ten connecting elements 4, 5, which are formed as commercially available press pins for electrical contact. The connecting elements 4, 5 are connected to the web 24 of the molded body 2 via mounting sections 42. The connecting elements 4, 5 are surrounded by the material of the molded body 2. Here, by way of example, the connections are also produced by injection molding.
[0046] The connecting elements 4 and 5 are arranged such that five connecting elements can be assigned to each substrate 3, 300. The arrangement of the connecting elements 4 and 5 on the first substrate 3 is symmetrical to the arrangement of the connecting elements 4 and 5 on the second substrate 300 in the x-direction. As an example, viewed in the y-direction, the upper outer frame section of the molded body 2 has two protrusions spaced apart from each other and each having a connecting element 4, 5. Here, in each case, two sets of connecting elements, consisting of the first connecting element 4 and the second connecting element 5, are arranged on the central web 24. The corresponding connecting elements 4, 5 have conductive contact sections 40, 50, made of copper, which are arranged on the corresponding substrate conductor tracks of the respective substrates 3, 300. Therefore, these contact sections 40, 50 are not arranged on the molded body 2 and extend from the web 24 to the substrate conductor track, see [reference needed]. Figure 4 The contact section 40 of the first connecting element 4 points to the upper outer frame section, and the contact section 50 of the second connecting element 5 points to the lower frame section.
[0047] Similarly, there may be more or fewer connecting elements 4 and 5 as shown. Furthermore, connecting elements 4 and 5 may be arranged individually and offset from each other on the molded body 3.
[0048] Because of this construction, connecting elements 4 and 5 can be arranged closely next to each other, thus ensuring rapid electrical switching.
[0049] The molded body 2 further comprises two metal bodies 6 spaced apart from each other and arranged below each other in the y-direction for electrical contact between the two substrates 3, 300. Each of the two metal bodies 6 has a third contact section 60, which is materially bonded to an associated third section 360 of the third substrate conductor track 36 of the first substrate 3. Furthermore, each metal body has a fourth contact section 66, which is similarly materially bonded to the fourth section 366 of the third substrate conductor track 36 of the second substrate 300. For example, this material bonding is formed by a welding process. As an example, the two metal bodies 6 are arc-shaped and made of copper. Each metal body 6 further comprises a third mounting section 62, which is connected to a section of the central web 26. The form-fit connection is also formed here by injection molding during the production of the molded body 2.
[0050] For example, the mounting sections of connecting elements 42, 52, and 62 are connected to the webs 24 and 26 in a form-fit manner. Alternatively, the connection between the webs 24 and 26 and the mounting sections 42, 52, and 62 can also be a press fit connection or a material bonding connection.
[0051] Alternatively, the molded body 2 may have only one metal body 6 or more than two metal bodies 6. The third contact segment 60 and the fourth contact segment 66 may also be connected to the same conductor tracks 30, 32, 36, 38 of the substrates 3, 300. In addition, the third contact segment 60 and the fourth contact segment 66 may each be connected to the metallized surface of the power semiconductor component 380.
[0052] Figure 3 A power semiconductor module 1 according to the present invention is shown in a plan view. The power semiconductor module 1 has... Figure 1 The first substrate 3 and the second substrate 300 described in the text (here, dashed lines), and also in Figure 2 The molded body 2 described herein, when viewed from the normal direction N (i.e., the z-direction), is arranged on two substrates 3 and 300 and surrounds the two substrates in a frame manner, specifically completely surrounding them. The molded body 2 can be connected to the substrates 3 and 300 by press fitting, form fitting, or material bonding.
[0053] Figure 4A side view shows details of the molded body 2 of the power semiconductor module 1 according to the invention, having a web 24 and connecting elements 4, 5, as well as a first substrate conductor track 30 and a second substrate conductor track 32, also including a first substrate 3. The two connecting elements 4, 5 are identical and arranged mirror-symmetrically relative to each other. Therefore, viewed in the y-direction, the corresponding contact sections 40, 50 are pointing away from each other. Thus, the contact sections 40, 50 are laterally separated from the longitudinal directions 46, 56 of the corresponding connecting elements 4, 5 aligned in the normal direction N. They are arranged at a distance from each other and are form-fitted to the web 24 at their mounting sections 42, 52, and are completely surrounded by the web in the mounting sections 45, 52. Therefore, the connecting elements 4, 5 do not contact each other. The connecting elements 4, 5 are uniformly arranged in the web 24. Here, for clarity, the web 24 is shown as spaced apart from the connecting elements 4, 5.
[0054] Here, the first connecting element 4 has a first longitudinal direction 46, and the second connecting element 5 has a second longitudinal direction 56 corresponding to the normal direction N. In the normal direction N, i.e., in the z-direction, the first connecting element 4 on the first segment 340 of the first substrate conductor track 30 is electrically connected to its first contact segment 40 by laser welding in a material bonding manner. Here, the first contact segment 40 is formed in a Z-shape. Furthermore, the connecting element 4 has a connecting segment 44 for external connection, which transitions seamlessly from the mounting segment 42.
[0055] The second connecting element 5, having a connecting section 54, a mounting section 52, and a contact section 50, has the same structure as the first connecting element 4. However, the difference is that the second contact section 50 of the second connecting element 5 is arranged on the second section 350 of the second conductor track 32 and is materially bonded to the second section 350 of the second conductor track 32.
[0056] Figure 5A plan view of another embodiment of a first substrate 3 having connection devices 380 in the details of a power semiconductor module 1 according to the present invention is shown. Here, the first substrate 3 is also formed symmetrically. Here, the first substrate 3 also has a plurality of substrate conductor tracks 30, 32, 36. For clarity, not all substrate conductor tracks are described in detail in the following text. The first substrate 3 has, in particular, a first substrate conductor track 30, a second substrate conductor track 32, and a third substrate conductor track 36. The first substrate conductor track 30 has a first segment 340, the second substrate conductor track 32 has a second segment 350, and the third substrate conductor track 36 has four power semiconductor components 380. The first substrate conductor track 30 is arranged below the second substrate conductor track 32 and the third substrate conductor track 36 in the y-direction. Two power semiconductor components 380 are arranged toward the first segment 340 of the first substrate conductor track 30 and are respectively bonded to the first segment 340 by two connection devices formed here as bonding strips 382, wherein the second substrate conductor track 32 is arranged between the two power semiconductor components 380. Alternatively, material bonding can also be achieved through adhesive bonding, sintering, or brazing.
[0057] The detailed illustration here shows a portion of the second substrate conductor track 32 and a portion of the power semiconductor component 380, which is arranged next to the second substrate conductor track 32 in the x-direction on the left side of the figure. The second substrate conductor track 32 is electrically connected to the power semiconductor component 380 in a material-bonded manner by means of a connection device, which is formed here as a bonding line 384.
[0058] Although not shown, additional sections 340 and 350 may exist for making contact between the connecting elements 4 and 5 and their contact sections 40 and 50 on the substrate conductor track. Similarly, for better understanding, illustrations of additional connecting devices 382 and 384, such as bonding lines or bonding strips, are omitted.
[0059] Figure 6 A three-dimensional view illustrates another embodiment of the power semiconductor module 1 according to the invention, including a molded body 2 with connecting elements 4 and 5 and a substrate with substrate conductor tracks. The molded body 2 and... Figure 2 The difference of the molded body 2 is that the molded body 2 has a first frame section 20 and a second frame section 22 and two webs 24, which extend together on the corresponding frame sections 20, 22 to form web sections and connect the two frame sections 20, 22 to each other.
[0060] The molded body 2 is configured here to surround the substrate in a frame-like manner. Viewed in the y-direction, the upper web 24 here has two second sets of connecting elements 4, 5. In addition to these two second sets, a single connecting element is also arranged on the lower web 24. These two sets, as well as the individual connecting elements 4, 5, are arranged at a distance from each other in the x-direction on the two webs 24, wherein the two webs 24 of the two sets are arranged parallel to each other, and the individual connecting element is arranged on the lower web 24 between the two second sets. Here, with... Figure 2 Compared to the webs 24 and 26, the web 24 has a curve in the section where the connecting elements are arranged. The molded body 2 here has four metal bodies 6 for making electrical contact.
[0061] Figure 6 A detailed view of a second group consisting of a first connecting element 4 and a second connecting element 5 from the upper web 24 is also shown. The connecting elements 4 and 5 are arranged in parallel but mirror-symmetrical configurations; see also [link to related document]. Figure 4 The two connecting elements are completely surrounded by the web 24 in their mounting sections 42 and 52, which are not visible here. Viewed in the z-direction, the first connecting section 55 and the second connecting section 54 of the corresponding connecting elements 4 and 5 are arranged above the web 24 and thus protrude from it. Here, the contact sections 40 and 50 are also conductive and formed of copper, and are materially bonded to the substrate conductor track. The contact section 40 of the first connecting element 4 is arranged in the negative y-direction, while the contact section 50 of the second connecting element 5 is arranged in the positive y-direction. Here, the contact sections 40 and 50 have curved sub-sections and rectangular flat sub-sections, wherein the rectangular flat sub-sections are larger than the curved sub-sections connected to the substrate conductor track. Both contact sections 40 and 50 are located outside the web 24 and are electrically connected to different substrate conductor tracks in a material-bonded manner.
[0062] The molded body 2 also has load-bearing connection elements for external contact, which are made of copper.
[0063] Figure 7 Showing from Figure 2 The molded body 2 with connecting elements 4 and 5, and a detailed view of the connecting elements 4 and 5 together with the printed circuit board 7. The detailed view shows a portion of the contact section 40 and the connection section 44 of the first connecting element 4, as well as the contact section 50 of the second connecting element 5.
[0064] like Figure 4As shown, the web 24 is arranged above the contact sections 40 and 50 in the normal direction N and has mounting sections for connecting elements 4 and 5. Furthermore, the printed circuit board 7 is also arranged above the web 24 in the normal direction N. The printed circuit board 7 has corresponding elongated cutouts 74 and 75 in the x-direction for the first connecting section 44 and the second connecting section 54. For visualization purposes, the second connecting section 54 has been omitted from the illustration. The cutouts 74 and 75 are arranged in the regions of the connecting sections 44 and 54 in the normal direction N, such that these regions protrude from the cutouts 74 and 75. The elongated cutouts 74 and 75 have wide sides 740 and 750, which are formed here by means of rounded overlapping cuts, for example, by punching. Alternatively, the cutout can also be produced by another subtractive process, such as cutting, milling, laser cutting, or etching. Furthermore, the cutouts 74 and 75 can be cuboid, rounded, or other shapes.
[0065] Therefore, the cutouts 74 and 75 can be placed very close to each other on the printed circuit board 7, so that the connecting elements 4 and 5 can also be placed close to each other side by side. As a result, electrical switching can be achieved particularly efficiently.
[0066] List of reference numerals
[0067] 1 power semiconductor module
[0068] 2 molded body
[0069] 20 First Frame Section
[0070] 22 Second Frame Section
[0071] 24 webs
[0072] 26 webs
[0073] 3 First substrate
[0074] 30 First substrate conductor track
[0075] 32 Second substrate conductor track
[0076] 36 Third substrate conductor track
[0077] 38 Fourth substrate conductor track
[0078] 300 Second Substrate
[0079] 340 First Section
[0080] 342 Connecting Device
[0081] 350 Second Section
[0082] The third section of the 360 substrate conductor track
[0083] The fourth section of the 366 substrate conductor track
[0084] 380 power semiconductor components
[0085] 382 connection device, combined with strip
[0086] 384 connection device, connection line
[0087] 4 First connecting element
[0088] 40 First contact section
[0089] 42 First Installation Section
[0090] 44 First connecting section
[0091] 46 First longitudinal direction
[0092] 5 Second connecting element
[0093] 50 Second Contact Section
[0094] 52 Second Installation Section
[0095] 54 Second Connecting Section
[0096] 56 Second longitudinal direction
[0097] 6 metal body
[0098] 60 Third contact section
[0099] 62 Third Installation Section
[0100] 66 Fourth Contact Section
[0101] 7 Printed Circuit Boards
[0102] 74 First incision
[0103] 740 First Wide Side
[0104] 75 Second Incision
[0105] 750 second wide side
[0106] N-normal direction
Claims
1. A power semiconductor module (1) having a frame-shaped molded body (2), the molded body having a first substrate (3) disposed therein, the first substrate (3) having a first substrate conductor track (30) and a second substrate conductor track (32), the first substrate conductor track (30) having a normal direction (N), and the molded body having a first connecting element (4), wherein, The molded body (2) has a first frame section (20) and a second frame section (22), the second frame section (22) preferably being positioned opposite to the first frame section, wherein the first frame section (20) and the second frame section (22) are connected by a web (24), wherein the first connecting element (4) has a first contact section (40), a first mounting section (42) and a first connecting section (44), the first contact section (40) being electrically connected in a material-bonded manner to an associated first section (340) of the first substrate conductor track (30), the first mounting section (42) being connected to the web (24), and the first connecting section (44) being configured for external connection.
2. The power semiconductor module according to claim 1, wherein, The molded body (2) and the web (24) are formed as one unit.
3. The power semiconductor module according to claim 1, wherein, The molded body (2) and the web (24) are formed as two pieces, preferably made of the same material, and preferably connected to each other by means of a snap-lock connection.
4. The power semiconductor module according to any one of claims 1-3, wherein, The second connecting element (5) having a second contact section (50) has a second mounting section (52) and a second connecting section (54), the second contact section (50) being electrically connected in a material-bonded manner to an associated second section (350) of the second substrate conductor track (32), the second mounting section (52) being connected to the web (24), and the second connecting section (54) being configured for external connection.
5. The power semiconductor module according to any one of claims 1-3, wherein, The corresponding contact sections (40, 50), if present, are kept laterally away from the longitudinal direction (46, 56) of the corresponding connecting elements (4, 5), which are aligned in the normal direction (N).
6. The power semiconductor module according to claim 4, wherein, The first installation section (42) and the second installation section (52) are arranged to be far apart from each other.
7. The power semiconductor module according to any one of claims 1-3, wherein, A third substrate conductor track (36) is disposed on the first substrate (3) or the second substrate (300), wherein a power semiconductor component (380) is electrically connected to the first substrate conductor track (30) or the second substrate conductor track (32) by means of a connection device (382, 384), the power semiconductor component (380) being disposed on the third substrate conductor track (36).
8. The power semiconductor module according to claim 7, wherein, Viewed from the normal direction (N), the connecting device (384) partially overlaps with a segment of the first connecting element (4) or the second connecting element (5).
9. The power semiconductor module according to any one of claims 1-3, wherein, The metal body (6) having a third contact section (60) has a third mounting section (62) and preferably a fourth contact section (66), the third contact section (60) being electrically connected in a material-bonded manner to an associated third section (360) of a substrate conductor track (30, 32, 36, 38) of one of the substrates (3, 300) or to the metallized surface of the power semiconductor component (380), the third mounting section (62) being connected to the web (24, 26), and the fourth contact section (66) being electrically connected in a material-bonded manner to an associated fourth section (366) of a substrate conductor track (30, 32, 36) of one of the substrates (3, 300) or to the metallized surface of the power semiconductor component (380).
10. The power semiconductor module according to claim 9, wherein, The third contact section (60) and the fourth contact section (66) are connected to the same substrate conductor tracks (30, 32, 36).
11. The power semiconductor module according to any one of claims 1-3, wherein, Preferably, all mounting sections (42, 52, 62), if present, are connected to the web (24, 26) by press fit, form fit or material bonding.
12. The power semiconductor module according to claim 4, wherein, The printed circuit board (7) has corresponding elongated cutouts (74, 75) for the first connection section (44) and the second connection section (54), the printed circuit board (7) being arranged above the web (24) in the normal direction (N), wherein the wide sides (740, 750) of the cutouts (74, 75) are arranged side by side with each other.
13. A method for producing a power semiconductor module (1) according to any one of claims 1 to 12, comprising the following steps in a specified order: a) Arrange the molded body (2) to form a first substrate (3), wherein, The web (24) is integrally formed with the molded body (2) and has a first connecting element (4); b) Materially bond the first contact section (40) of the first connecting element (4) to the associated section (340) of the first conductor track (30).
14. A method for producing a power semiconductor module (1) according to any one of claims 1 to 12, comprising the following steps in a specified order: a) Arrange the molded body (2) to form a first substrate (3); b) Arrange the web (24) together with the first connecting element (4) and connect the web (24) to the molded body (2); c) Materially bond the first contact segment (40) of the first connecting element (4) to the associated segment (340) of the first conductor track (30).
15. The method according to any one of claims 13 or 14, wherein, A second connecting element (5) and preferably a metal body (6) are arranged on the web (24).
16. The method according to any one of claims 13 to 14, wherein, The material bonding is achieved through adhesive bonding, brazing, sintering, or welding.
Citation Information
Patent Citations
Method for manufacturing a power semiconductor module and power semiconductor module
DE102021134003A1