Ion beam sputtering method, device, system and electronic equipment

Abstract

The invention provides an ion beam sputtering method, device and system and electronic equipment. The method comprises the following steps: applying different target bias voltages to a plurality of target materials which are fixedly arranged, so that sputtering occurs or does not occur on the surfaces of the target materials; and ion beams are emitted to the target material with the surface capable of being sputtered, and ion beam sputtering deposition is carried out. The ion beam sputtering deposition method solves the technical problems that an existing ion beam sputtering deposition method generally depends on a mechanical movable structure to achieve ion beam sputtering target material selection and switching, particle pollution, deflation and lubrication residues are likely to be introduced in a high-cleanliness and low-defect coating scene, and the reliability and long-term stability of a system are remarkably reduced.

Description

Technical Field

[0001] This disclosure relates to the field of ion beam sputtering coating technology, and more specifically, to an ion beam sputtering method, apparatus, system, and electronic device. Background Technology

[0002] Existing ion beam sputtering (IBS) and its derivative processes typically rely on mechanically movable structures (such as rotating shafts, moving target positions, mechanical shutters, or masking films) to change the sputtered target or material flux path when achieving multi-target material switching or multi-component thin film deposition. Such structures are prone to introducing particulate contamination, outgassing, and lubrication residues in high-cleanliness, low-defect coating scenarios, and significantly reduce system reliability and long-term stability. Summary of the Invention

[0003] This disclosure provides an ion beam sputtering method, apparatus, system, and electronic device to address the technical problem that existing ion beam sputtering deposition methods typically rely on mechanically movable structures to select and switch ion beam sputtering targets, which easily introduces particulate contamination, outgassing, and lubrication residues in high-cleanliness, low-defect coating scenarios, leading to a significant reduction in the reliability and long-term stability of the system.

[0004] According to one aspect of the present disclosure, an ion beam sputtering method is provided, the method comprising: applying different target bias voltages to a plurality of fixedly arranged targets to cause sputtering or non-sputtering on the surface of the targets; and firing an ion beam at the target with sputtering capability to perform ion beam sputtering deposition.

[0005] Optionally, different target bias voltages are applied to the multiple targets arranged in a fixed manner, including: applying a negative bias voltage to the target target among the multiple targets; the negative bias voltage is used to form an ion sheath layer on the surface of the target target; applying a positive bias voltage or a zero bias voltage to the targets other than the target target among the multiple targets.

[0006] Optionally, a negative bias voltage is applied to the target target among the multiple targets, including at least one of the following: applying a negative DC bias voltage to the target target; applying a unipolar negative pulse bias voltage to the target target; applying a bipolar pulse bias voltage or a three-stage pulse bias voltage to the target target; wherein the negative pulse bias voltage in the bipolar pulse bias voltage or the three-stage pulse bias voltage is used for ion beam sputtering, and the positive pulse bias voltage in the bipolar pulse bias voltage or the three-stage pulse bias voltage is used to neutralize the charge on the surface of the target target.

[0007] Optionally, ion beam sputtering deposition is performed by firing an ion beam at a target whose surface can be sputtered, including: Step S1, set the serial number of the target material as follows , is an integer greater than or equal to 1; let the current index ; Step S2, emit an ion beam to the th target to perform ion beam sputtering deposition on the th target ; Step S3, when the ion beam sputtering deposition on the th target is completed, switch the negative bias voltage applied to the th target to a positive bias voltage or a zero bias voltage; switch the positive bias voltage or zero bias voltage applied to the th target to a negative bias voltage; Step S4, if i < n, let i = i + 1, and repeat Steps S2 to S3; n is the number of targets.

[0008] Optionally, under the condition that at least two targets are arranged side by side, the above method further includes: gradually reducing the bias duty cycle of the first target among the at least two targets, and gradually increasing the bias duty cycle of the second target among the at least two targets.

[0009] Optionally, under the condition that at least two targets are arranged side by side, the above method further includes at least one of the following: adjusting the amplitude of the target bias voltage applied to the at least two targets; continuously adjusting the feed gas during single-target sputtering.

[0010] According to another aspect of the embodiments of the present disclosure, an ion beam sputtering system is provided, including: a cavity for providing a low-pressure deposition environment; an ion source assembly disposed inside the cavity for generating an ion beam; a plurality of targets disposed in parallel inside the cavity for performing ion beam sputtering; a target bias power supply assembly disposed inside the cavity and connected to the targets for outputting a target bias voltage; a substrate stage assembly disposed inside the cavity for placing a substrate to be plated; and a controller respectively connected to the ion source assembly and the target bias power supply assembly for executing the above method.

[0011] According to another aspect of the embodiments of the present disclosure, an ion beam sputtering device is provided, including: a processing module for applying different target bias voltages to a plurality of fixedly arranged targets so that sputtering occurs or does not occur on the target surfaces; an emission module for emitting an ion beam to the targets whose surfaces can undergo sputtering to perform ion beam sputtering deposition.

[0012] According to yet another aspect of the embodiments of the present disclosure, an electronic device is provided, which includes: a memory, a processor, and a computer program stored on the memory, and the processor executes the computer program to implement the above method.

[0013] According to another aspect of the present disclosure, a computer-readable storage medium is provided that stores a computer program thereon, which, when executed by a processor, implements the above-described method.

[0014] The beneficial effects of the technical solution provided in this disclosure are: by realizing the switching and selection of ion beam sputtering targets through electrical means, while maintaining the advantages of high density and low defects of ion beam sputtering, the process cleanliness, system reliability and target utilization efficiency are significantly improved. Attached Figure Description

[0015] To more clearly illustrate the technical solutions in the embodiments of this disclosure, the accompanying drawings used in the description of the embodiments of this disclosure will be briefly introduced below.

[0016] Figure 1 A flowchart of an ion beam sputtering method provided in this disclosure embodiment; Figure 2 This is a schematic diagram illustrating the working modes of different targets under different bias states provided in the embodiments of this disclosure. Figure 3 This is a flowchart of a method for switching ion beam sputtering targets without a mechanically movable structure according to an embodiment of the present disclosure; Figure 4 This is a schematic diagram of the structure of an ion beam sputtering system provided in an embodiment of the present disclosure; Figure 5 This is a schematic diagram of the structure of an ion beam sputtering apparatus provided in an embodiment of the present disclosure; Figure 6 This is a schematic diagram of the structure of an electronic device provided in an embodiment of this disclosure. Detailed Implementation

[0017] The embodiments of this disclosure are described below with reference to the accompanying drawings. It should be understood that the embodiments described below with reference to the accompanying drawings are exemplary descriptions for explaining the technical solutions of the embodiments of this disclosure, and do not constitute a limitation on the technical solutions of the embodiments of this disclosure.

[0018] Those skilled in the art will understand that, unless specifically stated otherwise, the singular forms “a,” “an,” “the,” and “the” used herein may also include the plural forms. It should be further understood that the terms “comprising” and “including” as used in embodiments of this disclosure mean that the corresponding feature can be implemented as the presented feature, information, data, step, operation, element, and / or component, but do not exclude implementation as other features, information, data, step, operation, element, component, and / or combinations thereof supported by the art. It should be understood that when we say that an element is “connected” or “coupled” to another element, the one element can be directly connected or coupled to the other element, or it can mean that the one element and the other element are connected through an intermediate element. Furthermore, “connected” or “coupled” as used herein can include wireless connection or wireless coupling. The term “and / or” as used herein indicates at least one of the items defined by the term, for example, “A and / or B” or “A, B” indicates implementation as “A,” or implementation as “B,” or implementation as “A and B.”

[0019] To make the objectives, technical solutions, and advantages of this disclosure clearer, the embodiments of this disclosure will be described in further detail below with reference to the accompanying drawings.

[0020] First, some existing ion beam sputtering deposition methods will be introduced: 1. Limitations of traditional IBS and target switching methods Inductively coupled plasma (IBS) films are widely used in the fabrication of high-performance optical thin films, superconducting thin films, and magnetoelectronic devices due to their low operating pressure, controllable particle energy, dense film density, and low defect density. However, in the actual fabrication of multilayer or multimaterial thin films, traditional IBS processes typically employ the following methods to achieve material switching: Mechanical rotating shaft or turntable target position: Different target materials are exposed to the ion beam in sequence by rotating the target holder; Linear moving target or zone target: The area of ​​action of the ion beam is changed by translating the target.

[0021] While the aforementioned solutions are technically sound, they all introduce mechanical moving parts within the vacuum chamber. In the fabrication of high-end optics, superconducting, and quantum devices, these moving parts are considered a significant source of particulate contamination and film defects, and also introduce additional sealing, lubrication, and maintenance challenges.

[0022] 2. Target-biased ion beam sputtering (BTIBS / RBTIBSD) To reduce the instabilities caused by the strong coupling between plasma and the sputtering process in magnetron sputtering, researchers proposed the Biased Target Ion Beam Sputtering Deposition (BTIBS) technique. Its core idea is: Ions are generated using low-energy wide-beam ion sources (such as End-Hall or closed drift Hall sources); The ion source is decoupled from the target material, and a localized sheath is formed by applying an independent DC or pulsed negative bias voltage to the target material; Positive ions are accelerated within the sheath to bombard the target and sputter, while the ion source itself maintains a low beam pressure (typically <30 eV).

[0023] This technology has been successfully used to prepare high-quality functional thin films. For example, the reactive target-biased ion beam deposition (RBTIBD) method proposed by Cyberey et al. achieved lower surface roughness and superior electrical properties than magnetron sputtering in the preparation of NbTiN superconducting thin films. Its key advantage lies in the complete decoupling of plasma generation and target bias, allowing for fine control of sputtering kinetics through pulsed bias. Similarly, Hou et al. applied differentiated pulsed biases to two independent targets, Ni and Ti, using BTIBD to achieve compositionally controllable and ultra-smooth NiTi alloy thin film deposition, demonstrating the potential of multi-target parallel + independent target bias in material control.

[0024] However, in the above scheme, the actual switching of multi-target materials still depends on sample rotation or target arrangement, and the mechanically movable structure has not been fundamentally eliminated.

[0025] 3. The "mechanically-free switching" phase-separated IBS proposed by Malobabic et al. To address the contamination problem introduced by mechanical switching in high-end optical coatings, Malbobic et al. proposed an improved IBS process based on electromagnetic field guidance. This method introduces a complex magnetic field coil and plasma guiding structure between the target and the substrate, utilizing E×B drift and plasma rotation effects to spatially separate different sputtered species, thereby achieving the goal of changing the composition of the deposited material without mechanical movement. This work demonstrates for the first time the feasibility of "mechanically-free switching materials" within the IBS framework, but its realization depends on: High-current, large-volume guide coil; Complex magnetic field distribution design and tuning; A relatively long guidance path between the target and the substrate.

[0026] These factors significantly increase system complexity, manufacturing costs, and engineering implementation difficulty, which is detrimental to industrialization and modular integration.

[0027] It can be seen that the existing technology has the following main shortcomings: 1. There is a structural contradiction between the IBS high-cleanliness process and multi-target switching: traditional solutions inevitably introduce mechanical movement; 2. Although target offset technology is mature, it is mainly used for sputtering dynamics control, rather than as a means of "target selection and switching"; 3. Existing non-mechanical switching solutions (such as the method proposed by Malbobic) rely on complex electromagnetic structures, which have high engineering barriers.

[0028] Therefore, there is an urgent need for a simple ion beam sputtering target switching method that does not require mechanical moving parts, so as to balance high cleanliness, target utilization rate and process controllability.

[0029] To address the problems of existing ion beam sputtering and its improved processes, which generally rely on mechanically movable structures during multi-target material deposition, leading to particulate contamination, high system complexity, and limited target utilization, this disclosure proposes a method for switching and selecting ion beam sputtering targets electrically, without requiring any mechanically movable structures. This method significantly improves process cleanliness, system reliability, and target utilization efficiency while maintaining the advantages of high density and low defect rate in ion beam sputtering. Specifically, this disclosure has at least one or a combination of the following objectives: 1. Eliminate the contamination risk caused by mechanically movable structures: By replacing the traditional rotating shaft, shutter, masking film or moving target structure with electrical switching of target bias state (polarity, amplitude, waveform), the "electrical enable / disable" selection of target material during the deposition process is realized, fundamentally avoiding particle peeling, lubricant volatilization and vacuum outgassing problems caused by mechanical movement. It is suitable for the preparation of thin films for high-end optical, superconducting and quantum devices that are extremely sensitive to contamination.

[0030] 2. Achieve “physical switching-free” selection and protection of targets: By fixing multiple targets in parallel, applying a negative bias only to the target target to form a sputtering sheath, and applying a positive bias or zero bias to the non-working target to put it in an ion-repellent or protected state, rapid and repeatable switching between different targets can be achieved without changing the working state of the ion source, while avoiding ion bombardment and undesirable sputtering of the non-working target.

[0031] 3. Improve the utilization rate and deposition uniformity of high-value targets: By applying independently adjustable bias parameters to different regions of the target, the sputtering rate can be precisely controlled in space, thereby achieving uniform deposition adjustment without the need for masking, significantly improving the utilization efficiency of precious metal, high-purity or small-sized targets, and reducing material costs.

[0032] 4. Achieving high beam current sputtering while maintaining low beam pressure: Utilizing the strong ionization capability and large beam current of the Hall-type ion source, the energy required for sputtering is provided only through target bias under low ion energy conditions, thus achieving both high deposition efficiency and low substrate damage; and effectively suppressing undesirable sputtering when the non-working target is under positive bias protection, achieving true "pollution-free sputtering".

[0033] 5. Adaptable to various target types and sputtering modes: Through various biasing methods such as continuous DC bias, unipolar pulse bias, bipolar pulse bias, and tripolar pulse bias with zero return, it can be applied to non-ionizable conductive targets, dielectric targets, and application scenarios that require precise control of sputtered particle energy distribution, thereby improving process versatility and scalability.

[0034] 6. Reduce system complexity and improve engineering feasibility: Compared with mechanically non-mechanical switching schemes that rely on complex magnetic field coils and guidance structures, this disclosure uses target bias control as the core, does not introduce additional large electromagnetic components, has a simple system structure, is easy to integrate into existing IBS or BTIBD platforms, and has good engineering feasibility and industrialization potential.

[0035] To achieve the above objectives, this disclosure aims to establish a new paradigm for target switching that replaces mechanical motion with electrical control within the framework of ion beam sputtering technology, providing a simple, reliable, and scalable technical path for the preparation of high-cleanliness, multi-material, and highly consistent thin films.

[0036] The following description of several exemplary embodiments illustrates the technical solutions of this disclosure and the technical effects produced by these solutions. It should be noted that the following embodiments can be referenced, learned from, or combined with each other. Identical terms, similar features, and similar implementation steps in different embodiments will not be repeated.

[0037] This disclosure proposes a method for switching ion beam sputtering targets without mechanical moving structures. The core idea is that, under the condition of multiple parallel sputtering targets arranged in a fixed manner, by applying a controllable target bias voltage (bias polarity, amplitude and waveform) to each target, the sputtering process of the corresponding target is selectively "enabled" or "disabled", thereby realizing the switching and selection of targets without any mechanical moving parts.

[0038] This disclosure provides an ion beam sputtering method, such as... Figure 1 As shown, the method includes the following steps: Step S101: Apply different target bias voltages to multiple fixedly arranged targets to cause sputtering or prevent sputtering on the target surface.

[0039] According to some optional embodiments of this disclosure, whether effective sputtering occurs on the target surface depends on whether a negative bias sheath layer is formed on its surface; by applying different target bias voltages to different targets, the following can be achieved: Working target: Formation of sputtering sheath layer - sputtering occurs; Non-working target: Applying positive or zero bias - ions are repelled or have insufficient energy - no sputtering or deposition contamination occurs.

[0040] Step S102: An ion beam is emitted onto a target material whose surface can be sputtered to perform ion beam sputtering deposition.

[0041] In this step, an ion beam is fired at a working target capable of sputtering, achieving sub-beam sputtering deposition on the target. The ion beam is generated by a low-energy, high-current Hall-type ion source.

[0042] The above-mentioned solution provided in this disclosure achieves the switching and selection of ion beam sputtering targets through electrical means, which significantly improves process cleanliness, system reliability and target utilization efficiency while maintaining the advantages of high density and low defects of ion beam sputtering.

[0043] This disclosure provides a possible implementation method for applying different target bias voltages to multiple fixedly arranged targets, which is achieved by the following method: applying a negative bias voltage to the target target among the multiple targets; the negative bias voltage is used to form an ion sheath layer on the surface of the target target; applying a positive bias voltage or a zero bias voltage to the targets other than the target target among the multiple targets.

[0044] Figure 2 This is a schematic diagram illustrating the working modes of different targets under different bias states provided in the embodiments of this disclosure, such as... Figure 2 As shown, applying a negative bias voltage to the target material can form an ion sheath layer on the target surface. Positive ions are accelerated and bombard the target material within the sheath layer, and target atoms are sputtered and deposited onto the substrate surface. Applying a positive bias voltage or zero bias to non-target materials causes positive ions to be repelled when approaching the target material. The ion energy is insufficient to form effective sputtering, and the target surface is protected from ion bombardment, achieving "positive protection".

[0045] The above method enables the electrical switching of the target material without changing the state of the ion source or introducing mechanical switching.

[0046] This disclosure provides a possible implementation method for applying a negative bias voltage to a target among multiple targets, including at least one of the following: applying a negative DC bias voltage to the target target; applying a unipolar negative pulse bias voltage to the target target; applying a bipolar pulse bias voltage or a three-stage pulse bias voltage to the target target; wherein the negative pulse bias voltage in the bipolar pulse bias voltage or the three-stage pulse bias voltage is used for ion beam sputtering, and the positive pulse bias voltage in the bipolar pulse bias voltage or the three-stage pulse bias voltage is used to neutralize the charge on the surface of the target target.

[0047] like Figure 2 As shown, applying a negative bias voltage to the target material mainly includes the following three modes: 1) Continuous DC bias mode Suitable for conductive targets; Continuous sputtering is achieved through a stable negative DC bias. It has a simple structure and is suitable for metal thin film deposition.

[0048] 2) Unipolar pulse bias mode Suitable for dielectric targets or targets that are prone to charge accumulation; Periodic negative pulses are used to prevent charge accumulation on the target surface; Improve sputtering stability.

[0049] 3) Bipolar or tripolar pulse bias mode Negative pulses are used for sputtering; Positive pulses are used to neutralize surface charges, preventing ionized sputtering products from falling back onto the target and improving the deposition rate. Suitable for high-quality dielectric thin film deposition; It can precisely control the ejection energy distribution of sputtered particles and precisely control the deposition rate; Suitable for applications that are sensitive to thin film interfaces, stress, or energy.

[0050] This disclosure provides a possible implementation method for ion beam sputtering deposition by firing an ion beam at a target material whose surface can be sputtered, including the following steps: Step S1, set the serial number of the target material as follows , Let the current index be an integer greater than or equal to 1; ; Step S2, to the first Target material Emit an ion beam to perform the first Target material Ion beam sputtering deposition; Step S3, when the first Target material When the ion beam sputtering deposition is completed, the negative bias voltage applied to the first target is switched to a positive bias voltage or a zero bias voltage; the positive bias voltage or zero bias voltage applied to the second target is switched to a negative bias voltage; Step S4, if i < n, set i = i + 1, and repeat Steps S2 to S3; n is the number of targets.

[0051] Figure 3 is a flowchart of a method for switching an ion beam sputtering target without a mechanically movable structure according to an embodiment of the present disclosure, as Figure 3 shown, including the following steps: Step S1: The system evacuates the air and stabilizes the working state of the ion source: Start the vacuum system to make the cavity reach a preset process pressure; start the ion source and stabilize its working parameters.

[0052] Step S2: Set the initial state of the target bias. Apply an initial bias to all targets, where only the target target is in a negative bias state, and the remaining targets are in a positive bias or zero bias protection state.

[0053] Step S3: Perform ion beam sputtering deposition on the first target. The ion beam forms sputtering on the surface of the negatively biased target to complete the deposition of the first target.

[0054] Step S4: Switch the target bias state. Turn off the negative bias of the first target, and at the same time apply a negative bias to the second target, and the remaining targets maintain the protection state.

[0055] Step S5: Perform ion beam sputtering deposition on the second target. Complete the material switching without any mechanical movement.

[0056] Step 6: Repeat the above steps to achieve multi-target material deposition or multi-layer film structure preparation.

[0057] According to some optional embodiments of the present disclosure, under the condition that at least two targets are arranged side by side, the above method further includes: gradually reducing the bias duty cycle of the first target among at least two targets, and gradually increasing the bias duty cycle of the second target among at least two targets.

[0058] In the preparation of optical thin films, gradient index (GRIN) structures, and functional thin films, it is usually necessary to achieve continuous changes in the refractive index in the film thickness direction or in-plane direction. In the existing magnetron sputtering process, since the maintenance of the discharge plasma depends on the minimum breakdown power and the minimum discharge current, when the power or current drops below a certain threshold, the plasma cannot be stably maintained, resulting in: There is an insurmountable lower limit for the deposition rate; In multi-component co-sputtering, the material ratio cannot be continuously changed; The refractive index gradient typically exhibits a step-like rather than a continuous change; Under ultra-low deposition rates or extremely weak doping conditions, process stability decreases significantly.

[0059] Therefore, magnetron sputtering has a natural process bottleneck when preparing thin films with high continuity and low gradient amplitude of refractive index.

[0060] The mechanically movable structure-free ion beam sputtering method proposed in this disclosure completely decouples the plasma generation process from the target sputtering process. The refractive index adjustment does not depend on the target discharge ignition conditions, but is directly controlled by the target bias electrical parameters. Its basic principle includes: 1) The ion source operates continuously and stably. The ion source operates continuously under fixed beam current conditions and does not become unstable due to changes in target bias.

[0061] 2) Target sputtering is entirely enabled by bias. Whether the target is sputtered depends solely on whether a negative bias is applied and the magnitude and duty cycle of the negative bias.

[0062] 3) The sputtering flux is a continuous function of the target bias parameters. The sputtering rate of the target can vary continuously with the bias voltage amplitude, pulse width, and duty cycle, and there is no minimum start-up power or minimum discharge current limitation.

[0063] 4) No mechanical outgassing or structural contamination as with traditional translational targets. There are no mechanical transmission components when switching sputtering materials, avoiding outgassing contamination from high-quality materials. Therefore, the scheme proposed in this disclosure has a natural advantage in terms of physical mechanism for achieving a continuous and finely tuned refractive index gradient.

[0064] When multiple targets are arranged in parallel, the present invention can achieve continuous adjustment of the material ratio by applying different bias parameters to different targets, for example: The first target bias duty cycle gradually decreases; The second target bias duty cycle gradually increases; Each target is always in an electrically switched state, requiring no mechanical movement.

[0065] Suppose we want to prepare from pure To pure Gradient film: Initial state: Target material: monopole pulse, 100% duty cycle (equivalent to continuous DC, full-speed sputtering).

[0066] Target: Monopole pulse, duty cycle 0% (off).

[0067] Gradual change process (software control): The controller synchronously adjusts the duty cycle of the two power supplies at millisecond speeds.

[0068] Duty cycle: 100% 99% 98% ... 1%.

[0069] Duty cycle: 0% 1% 2% ... 100%.

[0070] During this process, the bias voltage amplitude (e.g. -1200V) and frequency (e.g. 100kHz) of the two targets can remain constant, only the duty cycle can be changed.

[0071] By using the above technical solution, the proportion of atoms from different materials that are ejected can be precisely and continuously controlled by controlling electronic signals (voltage, pulse frequency, duty cycle), thereby forming a smooth compositional transition in the thin film.

[0072] According to some optional embodiments of this disclosure, when at least two targets are arranged side by side, the above method further includes at least one of the following: adjusting the amplitude of the target bias voltage applied to the at least two targets; and continuously adjusting the feed gas in single-target sputtering.

[0073] As some optional embodiments of this disclosure, while continuously adjusting the material ratio, the amplitude of the bias voltage can also be adjusted (to control the energy and yield of sputtered atoms). By dynamically adjusting the bias voltage, stress gradient can be controlled at the same time as the deposition gradient, preventing thick film cracking or substrate bending.

[0074] As some optional embodiments of this disclosure, the feed gas can also be continuously adjusted during single-target sputtering to achieve continuous adjustment of the material ratio. For example, the first stage uses only oxygen; the second stage uses both oxygen and nitrogen; and the third stage uses only nitrogen.

[0075] The above methods can achieve continuous co-sputtering of two or more materials; continuous variation of the composition ratio along time or space; and continuous gradient control of the corresponding refractive index.

[0076] By using the target bias continuous control method provided in this disclosure, the following technical effects can be achieved without introducing any mechanically movable structure: The entire target switching process involves no mechanical movement. The selection of the target material is entirely controlled by electrical bias. High-purity, low-particle, low-outgas sputtering deposition; High target material utilization and high process scalability; In gradient refractive index deposition, stable deposition occurs with extremely low gradient magnitudes of refractive index along the film thickness direction.

[0077] This disclosure transforms the traditionally mechanically-driven function of "target selection and switching" in ion beam sputtering into a process entirely controlled by the electrical state of the target bias. In existing ion beam sputtering (IBS) or target-biased ion beam sputtering (BTIBD) schemes, multi-target deposition typically achieves material switching through a rotating shaft, moving the target position, a shutter, or a shielding structure. Whether a target participates in sputtering depends on whether its physical position is exposed to the ion beam. In this disclosure, however, each target remains spatially fixed, and sputtering occurs solely based on whether a negative bias is applied. Non-working targets actively enter an "electrical protection state" through positive or zero bias, fundamentally eliminating the problems of mechanically movable structures and the resulting particulate contamination, outgassing, and lubrication residue. This differs from existing technologies that focus on "reducing mechanical movement" or "optimizing mechanical structures," representing a fundamental change at the target switching mechanism level.

[0078] Furthermore, this disclosure achieves a balance between target cleanliness and utilization that is difficult to achieve in existing sputtering schemes by using a specific technical means of positive bias protection for non-working targets. In magnetron sputtering and traditional IBS schemes, even if the target is not currently being used as the working target, its surface may still be subject to plasma diffusion, secondary electrons, or low-energy ion bombardment, leading to undesirable sputtering and cross-contamination. In this disclosure, however, the non-working target forms a repulsive barrier against positive ions under positive bias, suppressing ion bombardment from a physical mechanism and keeping the target surface in an active protection state. This method is particularly suitable for the deposition of high-purity, high-value targets (such as hafnium and platinum group metals). Compared with the passive protection methods in existing technologies that rely on shielding or power reduction, this disclosure has significant advantages in target consumption control and contamination suppression.

[0079] Furthermore, the proposed solution possesses the ability to finely control target bias in both spatial and temporal dimensions. In existing magnetron sputtering schemes, deposition uniformity primarily depends on magnetic field distribution, target erosion morphology, and substrate movement, making it difficult to independently control the sputtering intensity in different regions of the same target. This solution, however, can achieve fine adjustment of sputtering flux by applying differentiated bias parameters to different regions of the same target or to different electrodes, thereby obtaining highly uniform thin films. Simultaneously, by using bipolar or tripolar pulse biasing, the effective ejection ratio of sputtered particles is increased while ensuring target surface charge neutralization, resulting in higher deposition rates and stable incident energy distribution. Furthermore, by continuously varying the bias parameters, a continuously graded refractive index thin film structure, difficult to achieve in magnetron sputtering due to minimum start-up power limitations, is realized. Uniformity is controlled by bias voltage, eliminating the need for mechanically shielded uniformity correction plates. These technical methods differ from existing technologies in their physical implementation paths, constituting the key innovations and main protection content of this disclosure in terms of process controllability and application scalability.

[0080] Compared with existing ion beam sputtering and magnetron sputtering technologies, the significant advantages of this disclosure are primarily reflected in the substantial improvement in system cleanliness and reliability. Existing technologies typically rely on movable structures such as rotating shafts, moving target positions, or mechanical shutters to achieve material switching during multi-target switching or multi-material deposition processes. These structures are prone to becoming sources of particle contamination and outgassing in a vacuum environment. In contrast, this disclosure completely replaces mechanical switching with electrical switching of target bias, thereby eliminating mechanical moving parts within the vacuum chamber in the technical implementation path. This significantly reduces the risk of particle contamination and improves the long-term stability of the system. This advantage does not stem from the optimization of mechanical structures, but rather from the fundamental difference in technical means—the shift in the target sputtering enabling mechanism from "physical position selection" to "electrical state selection."

[0081] Secondly, this disclosure offers comprehensive advantages in terms of target utilization, deposition controllability, and thin film functionality that are difficult to achieve simultaneously with existing technologies. By applying a positive or zero bias to the non-working target, this disclosure actively suppresses ion bombardment through a physical mechanism, placing the target in an electrically protected state, significantly reducing unwanted sputtering and cross-contamination, making it particularly suitable for deposition applications of high-purity, high-value targets. Simultaneously, through precise control of the target bias amplitude, polarity, and pulse waveform, independent control of sputtering flux and sputtering particle energy is achieved, allowing deposition uniformity to be achieved by adjusting the bias parameters of different regions of the same target, without relying on magnetic field distribution or substrate movement. Furthermore, by employing bipolar or tripolar pulse bias methods, while improving the deposition rate and stabilizing the incident energy distribution, it avoids the problem of magnetron sputtering being limited by minimum start-up power, making continuous adjustment of the deposition rate difficult. This enables the realization of continuously and finely controllable gradient refractive index thin film structures. These advantages stem directly from the innovative technical means of this invention in target bias control methods and their application dimensions, rather than simple optimization of existing process parameters.

[0082] Figure 4 This is a schematic diagram of the structure of an ion beam sputtering system according to an embodiment of the present disclosure, as shown below. Figure 4 As shown, it includes: Cavity 40 is used to provide a low-pressure deposition environment.

[0083] According to some optional embodiments of this disclosure, cavity 40 is a vacuum cavity used to provide a low-pressure deposition environment, and there are no mechanically movable parts inside cavity 40 for target switching.

[0084] Ion source assembly 41 is disposed inside cavity 40 and is used to generate ion beam.

[0085] Ion source assembly 41 is used to generate a low-energy (typically less than 30 eV), high-current-density ion beam. Preferably, it is a Hall ion source; alternatively, it may be an RF ion source, an ECR ion source, or a DC discharge ion source.

[0086] Multiple targets 42 are arranged in parallel inside the cavity 40 for ion beam sputtering.

[0087] In the embodiments of this disclosure, one or more sputtering targets 42 are arranged in parallel; each target 42 is arranged in parallel along the same plane or approximately the same plane; each target 42 maintains a fixed spatial position during the deposition process and does not rotate, translate or switch.

[0088] The target bias power supply assembly 43 is located inside the cavity 40 and connected to the target material 42, and is used to output the target bias voltage.

[0089] In the embodiments of this disclosure, each target 42 is independently connected to a target bias power supply assembly 43; the target bias power supply assembly 43 can output: continuous DC bias; unipolar pulsed bias; bipolar pulsed bias; and tripolar pulsed bias with zero level.

[0090] The substrate stage assembly 44 is disposed inside the cavity 40 and is used to place the substrate to be plated.

[0091] The substrate stage assembly 44 is used to place the substrate to be deposited; a shielding baffle on the substrate can be optionally configured to prevent the product from depositing on the substrate when cleaning the target material; a substrate bias power supply can also be optionally configured to assist in deposition, densification or interface control.

[0092] The controller 45 is connected to the ion source assembly 41 and the target bias power supply assembly 43 respectively, and is used to execute the methods of any of the above embodiments.

[0093] This disclosure provides an ion beam sputtering apparatus, such as... Figure 5 As shown, the device 50 may include a processing module 501 and a transmitting module 502, wherein, The processing module 501 is used to apply different target bias voltages to multiple fixedly arranged targets so that sputtering or non-sputtering occurs on the surface of the target.

[0094] The emission module 502 is used to emit an ion beam to a target material whose surface energy can be sputtered, and to perform ion beam sputtering deposition.

[0095] The apparatus of this disclosure embodiment can execute the method provided in this disclosure embodiment, and its implementation principle is similar, and it has corresponding technical effects. The actions performed by each module in the apparatus of each embodiment of this disclosure correspond to the steps in the method of each embodiment of this disclosure. For a detailed functional description of each module of the apparatus, please refer to the description in the corresponding method shown above, and it will not be repeated here.

[0096] This disclosure provides an electronic device including a memory, a processor, and a computer program stored in the memory. The processor executes the computer program to implement the steps of the method provided in any optional embodiment of this disclosure. Compared with the prior art, it can achieve: switching and selecting ion beam sputtering targets electrically, while maintaining the advantages of high density and low defects of ion beam sputtering, significantly improving process cleanliness, system reliability, and target utilization efficiency.

[0097] In one alternative embodiment, an electronic device is provided, such as Figure 6 As shown, Figure 6 The illustrated electronic device 6000 includes a processor 6001 and a memory 6003. The processor 6001 and the memory 6003 are connected, for example, via a bus 6002. Optionally, the electronic device 6000 may further include a transceiver 6004, which can be used for data interaction between the electronic device and other electronic devices, such as sending and / or receiving data. It should be noted that in practical applications, the transceiver 6004 is not limited to one type, and the structure of the electronic device 6000 does not constitute a limitation on the embodiments of this disclosure.

[0098] Processor 6001 may be a CPU (Central Processing Unit), a general-purpose processor, a DSP (Digital Signal Processor), an ASIC (Application Specific Integrated Circuit), an FPGA (Field Programmable Gate Array), or other programmable logic devices, transistor logic devices, hardware components, or any combination thereof. It may implement or execute the various exemplary logic blocks, modules, and circuits described in conjunction with this disclosure. Processor 6001 may also be a combination that implements computational functions, such as including one or more microprocessor combinations, a combination of a DSP and a microprocessor, etc.

[0099] Bus 6002 may include a pathway for transmitting information between the aforementioned components. Bus 6002 may be a PCI (Peripheral Component Interconnect) bus or an EISA (Extended Industry Standard Architecture) bus, etc. Bus 6002 can be divided into address bus, data bus, control bus, etc. For ease of representation, Figure 6 The bus is represented by a single thick line, but this does not mean that there is only one bus or one type of bus.

[0100] The memory 6003 may be ROM (Read Only Memory) or other types of static storage devices capable of storing static information and instructions, RAM (Random Access Memory) or other types of dynamic storage devices capable of storing information and instructions, or EEPROM (Electrically Erasable Programmable Read Only Memory), CD-ROM (Compact Disc Read Only Memory) or other optical disc storage, optical disc storage (including compressed optical discs, laser discs, optical discs, digital universal optical discs, Blu-ray discs, etc.), magnetic disk storage media, other magnetic storage devices, or any other medium capable of carrying or storing computer programs and capable of being read by a computer, without limitation herein.

[0101] The memory 6003 stores computer programs that execute embodiments of the present disclosure and is controlled by the processor 6001. The processor 6001 executes the computer programs stored in the memory 6003 to implement the steps shown in the foregoing method embodiments.

[0102] Electronic devices include, but are not limited to, computer equipment and servers.

[0103] This disclosure provides a computer-readable storage medium storing a computer program, which, when executed by a processor, can implement the steps and corresponding content of the aforementioned method embodiments.

[0104] This disclosure also provides a computer program product, including a computer program that, when executed by a processor, can implement the steps and corresponding content of the aforementioned method embodiments.

[0105] It should be understood that although arrows indicate various operation steps in the flowcharts of the embodiments of this disclosure, the order in which these steps are implemented is not limited to the order indicated by the arrows. Unless explicitly stated herein, in some implementation scenarios of the embodiments of this disclosure, the implementation steps in each flowchart can be executed in other orders as required. Furthermore, some or all of the steps in each flowchart may include multiple sub-steps or multiple stages based on the actual implementation scenario. Some or all of these sub-steps or stages can be executed at the same time, and each sub-step or stage can also be executed at different times. In scenarios where execution times differ, the execution order of these sub-steps or stages can be flexibly configured as required, and the embodiments of this disclosure do not limit this.

[0106] The above description is only an optional implementation method for some implementation scenarios of this disclosure. It should be noted that for those skilled in the art, other similar implementation methods based on the technical concept of this disclosure without departing from the technical concept of this disclosure also fall within the protection scope of the embodiments of this disclosure.

Claims

1. An ion beam sputtering method, characterized in that, Comprising: Applying different target bias voltages to a plurality of fixedly arranged targets to cause sputtering or no sputtering on the surface of the targets; Emitting an ion beam to the target whose surface can undergo sputtering to perform ion beam sputter deposition.

2. The method according to claim 1, characterized in that, The applying different target bias voltages to a plurality of fixedly arranged targets includes: Applying a negative bias voltage to a target target among the plurality of targets; the negative bias voltage is used to form an ion sheath layer on the surface of the target target; Applying a positive bias voltage or a zero bias voltage to the targets other than the target target among the plurality of targets.

3. The method according to claim 2, characterized in that, The applying a negative bias voltage to the target target among the plurality of targets includes at least one of the following: Applying a negative DC bias voltage to the target target; Applying a unipolar negative pulse bias voltage to the target target; Applying a bipolar pulse bias voltage or a three-level pulse bias voltage to the target target; The negative pulse bias voltage in the bipolar pulse bias voltage or the three-level pulse bias voltage is used for ion beam sputtering, and the positive pulse bias voltage in the bipolar pulse bias voltage or the three-level pulse bias voltage is used to neutralize the charge on the surface of the target target.

4. The method according to any one of claims 1 to 3, characterized in that, The emitting an ion beam to the target whose surface can undergo sputtering to perform ion beam sputter deposition includes: Step S1, set the serial number of the target material as , Let the current index be an integer greater than or equal to 1; ; Step S2, to the first Target material Emit an ion beam to perform the first... Target material Ion beam sputtering deposition; Step S3, when the first Target material When ion beam sputtering deposition is completed, the force applied to the first... The negative bias voltage of each target is switched to a positive bias voltage or a zero bias voltage; the voltage applied to the first target is... Target material The positive bias voltage or zero bias voltage is switched to a negative bias voltage; Step S4, if i < n, let i = i + 1, and repeat steps S2 to S3; n is the number of the targets.

5. The method according to claim 1, characterized in that, Under the condition that at least two targets are arranged side by side, the method further includes: Gradually reducing the bias duty ratio of the first target among the at least two targets and gradually increasing the bias duty ratio of the second target among the at least two targets.

6. The method according to claim 5, characterized in that, Under the condition that at least two targets are arranged side by side, the method further includes at least one of the following: Adjusting the amplitude of the target bias voltage applied to the at least two targets; Continuously adjusting the fed gas in single-target sputtering.

7. An ion beam sputtering system, characterized in that, Comprising: A cavity for providing a low-pressure deposition environment; An ion source assembly arranged inside the cavity for generating an ion beam; A plurality of targets arranged in parallel inside the cavity for performing ion beam sputtering; A target bias power supply assembly arranged inside the cavity and connected to the targets for outputting a target bias voltage; A substrate stage assembly arranged inside the cavity for placing a substrate to be plated; A controller respectively connected to the ion source assembly and the target bias power supply assembly for executing the method according to any one of claims 1 to 6.

8. An ion beam sputtering apparatus, characterized in that, Comprising: A processing module for applying different target bias voltages to a plurality of fixedly arranged targets to cause sputtering or no sputtering on the surface of the targets; An emitting module for emitting an ion beam to the target whose surface can undergo sputtering to perform ion beam sputter deposition.

9. An electronic device, comprising: A memory, a processor, and a computer program stored on the memory, wherein the processor executes the computer program to implement the method according to any one of claims 1 to 6.

10. A computer-readable storage medium having a computer program stored thereon, characterized in that, When the computer program is executed by the processor, the method according to any one of claims 1 to 6 is implemented.

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