Crystal pulling system for pulling heavily boron-doped silicon single crystal and control method of crystal pulling system
The crystal pulling system, which features real-time monitoring and coordinated adjustment, solves the problem of poor resistivity uniformity during the pulling of heavily boron-doped silicon single crystals, thereby improving the quality of crystal rods and the performance and yield of semiconductor devices.
Patent Information
- Application Number
- CN202610467226.5
- Authority / Receiving Office
- CN · China
- Patent Type
- Applications(China)
- Current Assignee / Owner
- Filing Date
- 2026-04-10
- Publication Date
- 2026-05-12
AI Technical Summary
In the process of pulling heavily boron-doped silicon single crystals, the poor uniformity of the axial resistivity of the crystal rod leads to inconsistent performance of semiconductor devices and a high breakage rate.
A crystal pulling system is adopted, which includes a boron particle feeder, a heating device, a dual laser-induced breakdown spectroscopy measurement device, and a model predictive controller. The system monitors the melt boron concentration and the crystal rod carrier concentration in real time, and coordinates the crystal rod moving speed, boron particle feeding rate, and temperature gradient. The model predictive controller enables precise control of the resistivity axial distribution.
It improves the uniformity of axial resistivity of the crystal rod, reduces the breakage rate, and improves the yield and electrical performance consistency of semiconductor devices.