Wide-temperature-zone film platinum resistance sensor probe and manufacturing method thereof

Abstract

The invention provides a wide-temperature-range thin film platinum resistance sensor probe and a manufacturing method, relates to the technical field of sensors, and solves the technical problems that in the prior art, a chip can generate movement and differential thermal expansion under external mechanical impact or high-low-temperature working condition impact, and the chip is damaged. Therefore, the connection part of the chip and the temperature sensing end is easy to break and is unstable. The device comprises the following operation steps of: welding a metal wire on an armored core body with a lead on a film platinum resistor chip; coating a high-temperature adhesive on the metal wire and the lead wire, and carrying out high-temperature curing treatment, so that the chip and a connecting line of the probe form a whole; filling a metal cap with a high-temperature protection material, inserting a partial region of the armored core body and the thin-film platinum resistor chip into the metal cap, and performing high-temperature curing treatment; and welding the butt joint areas of the metal cap and the armored core body to form the wide-temperature-area film platinum resistance sensor probe.

Description

Technical Field

[0001] This invention relates to the field of sensor technology, and in particular to a wide-temperature-range thin-film platinum resistance sensor probe and its manufacturing method. Background Technology

[0002] Wide-temperature-range thin-film platinum resistance thermometer probes are temperature-sensitive elements based on platinum resistance. They utilize the characteristic that the resistance of platinum metal changes with temperature at high temperatures to measure temperature. Widely used in the automotive, chemical, microelectronics, metallurgy, aerospace, biopharmaceutical, air conditioning and refrigeration, and food processing industries, they can be used to measure the temperature of air, gases, and liquids, and are particularly suitable for applications requiring rapid response and high-precision measurement. Their working principle is based on the resistance-temperature effect of platinum metal. The chip is the core component of the probe for temperature sensing, while the probe serves as the carrier, protector, and signal output carrier for the chip. Only through their combination can the temperature measurement function be completed in a wide-temperature-range environment. When the temperature changes, the resistance value changes accordingly, and this change exhibits a good linear relationship within a certain temperature range. By measuring the resistance value of the platinum resistance thermometer and then applying a specific conversion relationship, the corresponding temperature value can be obtained.

[0003] Currently, the chip is installed inside the temperature sensing end of the probe. However, the chip in a wide-temperature-range thin-film platinum resistance sensor probe has structural stability defects: under external impact or mechanical vibration, the chip is prone to micro-displacement or shaking, leading to stress concentration at the connection between the chip and the temperature sensing end, which in turn causes solder joint cracking, lead wire breakage, or contact failure. Especially under high-low temperature shock conditions, the difference in the thermal expansion coefficients of the materials exacerbates the interface stress, further weakening the connection reliability and long-term service stability. This problem directly affects the measurement repeatability, lifespan, and safety of the probe in harsh environments such as high temperature, strong vibration, and thermal cycling. Summary of the Invention

[0004] The purpose of this invention is to provide a wide-temperature-range thin-film platinum resistance sensor probe and its manufacturing method, thereby solving the technical problem in the prior art where the chip moves and undergoes differential thermal expansion under external mechanical shock or high-low temperature conditions, leading to easy breakage and instability at the connection between the chip and the temperature sensing end. The various technical effects of the preferred solutions provided by this invention are detailed below.

[0005] To achieve the above objectives, the present invention provides the following technical solution:

[0006] The present invention provides a method for manufacturing a wide-temperature-range thin-film platinum resistance sensor probe, comprising the following steps: Step S1: Solder the metal wires on the armored core to the leads on the thin-film platinum resistance chip; Step S2: Apply high-temperature adhesive to the metal wire and the lead wire, and perform high-temperature curing treatment; Step S3: Fill the metal cap with high-temperature protective material, then insert a portion of the armored core and the thin-film platinum resistance chip into the metal cap, and perform high-temperature curing treatment; Step S4: Weld the mating area of ​​the metal cap and the armored core together to form a wide-temperature-range thin-film platinum resistance sensor probe.

[0007] Optionally, before step S1, step S0 is further included: bonding the mating areas of the substrate and the ceramic substrate on the thin-film platinum resistance chip together with a high-temperature adhesive, wherein the lead is located on the extension area of ​​the ceramic substrate, and a high-temperature curing treatment is performed.

[0008] Optionally, in step S1, the metal wire and the lead wire are welded together using a laser welding machine; In step S4, the mating areas of the metal cap and the armor core are welded together using a laser welding machine.

[0009] Optionally, the number of metal wires and the number of leads are both two, and the metal wires and leads are connected in a one-to-one correspondence.

[0010] Optionally, the armored core includes an armored metal tube and a metal wire, the metal wire passing through the armored metal tube, and the armored metal tube being filled with magnesium oxide powder.

[0011] This invention provides a wide-temperature-range thin-film platinum resistance sensor probe, comprising an armored core, a thin-film platinum resistance chip, and a metal cap. Metal wires on the armored core are connected one-to-one with leads on the thin-film platinum resistance chip and cured with a high-temperature adhesive. The metal cap is fitted over a portion of the armored core and the thin-film platinum resistance chip, and is filled with a high-temperature protective material. A portion of the armored core and the thin-film platinum resistance chip are inserted into and fixed within the metal cap, and the mating area between the metal cap and the armored core is welded together.

[0012] Optionally, it also includes a ceramic substrate, which is bonded to the substrate on the thin-film platinum resistance chip by a high-temperature adhesive. The leads and the metal wires are both located on the extension area of ​​the ceramic substrate, and the ceramic substrate is inserted into and fixed inside the metal cap.

[0013] This invention provides a method for manufacturing a wide-temperature-range thin-film platinum resistance sensor probe. The method involves soldering the metal wires on the armored core to the leads on the thin-film platinum resistance chip, achieving initial electrical connection and avoiding the risk of signal transmission interruption. By applying a high-temperature adhesive to the metal wires and leads and then performing high-temperature curing, the mechanical strength of the solder joint area is enhanced, effectively dispersing external impact stress. Based on this, a high-temperature protective material is filled into a metal cap, and then a portion of the armored core and the thin-film platinum resistance chip are inserted into the metal cap and subjected to high-temperature curing to form a buffer layer to absorb vibration energy and provide thermal protection. Finally, a gold... The mating area between the cap and the armor core is welded to establish a complete sealing structure, significantly improving overall rigidity. This design improves the structural stability of the thin-film platinum resistance chip in a wide temperature range environment, enabling the thin-film platinum resistance sensor probe to maintain a reliable connection between the thin-film platinum resistance chip and the temperature sensing end under mechanical shock and high-low temperature conditions. This ensures the long-term accuracy of temperature measurement and the safety of equipment operation, and solves the technical problem in the prior art where the chip moves and undergoes differential thermal expansion under external mechanical shock or high-low temperature conditions, which can easily cause the connection between the chip and the temperature sensing end to break and become unstable. Attached Figure Description

[0014] To more clearly illustrate the technical solutions in the embodiments of the present invention or the prior art, the drawings used in the description of the embodiments or the prior art will be briefly introduced below. Obviously, the drawings described below are only some embodiments of the present invention. For those skilled in the art, other drawings can be obtained based on these drawings without creative effort.

[0015] Figure 1 This is a schematic diagram of the structure of the wide-temperature-range thin-film platinum resistance sensor probe provided in this embodiment of the invention; Figure 2 This is a schematic diagram of the internal structure of the wide-temperature-range thin-film platinum resistance sensor probe with a ceramic substrate provided in this embodiment of the invention. Figure 3 This is a schematic diagram of the internal structure of the wide-temperature-range thin-film platinum resistance sensor probe without a ceramic substrate provided in this embodiment of the invention; Figure 4 This is a table showing the experimental results of a high-temperature thermal shock test on a wide-temperature-range thin-film platinum resistance sensor probe provided in an embodiment of the present invention. Figure 5 This is a table showing the experimental results of the long-term stability test of the wide-temperature thin-film platinum resistance sensor probe provided in the embodiments of the present invention; Figure 6This is a table showing the experimental results of a low-temperature shock test on a wide-temperature-range thin-film platinum resistance sensor probe provided in an embodiment of the present invention. Figure 7 This is a table showing the experimental results of the long-term low-temperature stability test of the wide-temperature-range thin-film platinum resistance sensor probe provided in the embodiments of the present invention.

[0016] In the diagram: 1. Armored core; 11. Metal wire; 12. Armored metal tube; 2. Thin-film platinum resistance chip; 21. Lead wire; 22. Substrate; 3. Metal cap; 4. Ceramic substrate. Detailed Implementation

[0017] To make the objectives, technical solutions, and advantages of this invention clearer, the technical solutions of this invention will be described in detail below. Obviously, the described embodiments are merely some embodiments of this invention, and not all embodiments. Based on the embodiments of this invention, all other implementation methods obtained by those skilled in the art without creative effort are within the scope of protection of this invention.

[0018] In the description of this invention, it should be noted that, unless otherwise stated, "a plurality of" means two or more; the terms "upper," "lower," "left," "right," "inner," "outer," "front end," "rear end," "head," "tail," etc., indicate the orientation or positional relationship based on the orientation or positional relationship shown in the accompanying drawings, and are only for the convenience of describing the invention and simplifying the description, and do not indicate or imply that the device or element referred to must have a specific orientation, or be constructed and operated in a specific orientation, and therefore should not be construed as a limitation of the invention. Furthermore, the terms "first," "second," "third," etc., are used for descriptive purposes only and should not be construed as indicating or implying relative importance.

[0019] In the description of this invention, it should also be noted that, unless otherwise explicitly specified and limited, the terms "installation," "connection," and "joining" should be interpreted broadly. For example, they can refer to a fixed connection, a detachable connection, or an integral connection; they can refer to a mechanical connection or an electrical connection; they can refer to a direct connection or an indirect connection through an intermediate medium. Those skilled in the art can understand the specific meaning of the above terms in this invention according to the specific circumstances.

[0020] Example 1 This invention provides a method for manufacturing a wide-temperature-range thin-film platinum resistance sensor probe, comprising the following steps: Step S1: The metal wire 11 on the armored core 1 is welded to the lead wire 21 on the thin film platinum resistance chip 2, thus achieving the initial electrical connection and avoiding the risk of signal transmission interruption. The metal wire 11 and the lead wire 21 are connected by laser welding machine. Step S2: Apply high-temperature adhesive to the metal wire 11 and lead wire 21, and perform high-temperature curing treatment to enhance the mechanical strength of the solder joint area and effectively disperse external impact stress. Step S3: Fill the metal cap 3 with high-temperature protective material, then insert a portion of the armored core 1 and the thin-film platinum resistance chip 2 into the metal cap 3, and perform high-temperature curing treatment to form a buffer layer to absorb vibration energy and provide thermal protection. Step S4: Weld the mating area between the metal cap 3 and the armored core 1 to establish a complete sealing structure and significantly improve overall rigidity. The mating area between the metal cap 3 and the armored core 1 is connected using a laser welding machine to form a wide-temperature-range thin-film platinum resistance sensor probe. This design improves the structural stability of the thin-film platinum resistance chip 2 in a wide-temperature-range environment, enabling the wide-temperature-range thin-film platinum resistance sensor probe to maintain a reliable connection between the thin-film platinum resistance chip 2 and the temperature sensing end under mechanical shock and high-low temperature operating conditions. This ensures the long-term accuracy of temperature measurement and the safety of equipment operation, solving the technical problem in the prior art where the chip moves and undergoes differential thermal expansion under external mechanical shock or high-low temperature operating conditions, causing the connection between the chip and the temperature sensing end to be prone to breakage and instability.

[0021] Among them, the armored core 1 is a composite conductor structure with high temperature insulation and mechanical protection functions, including an armored metal tube 12 extending along the axis and at least one metal wire 11 passing through it. The armored metal tube 12 is filled with high-purity magnesium oxide powder as an insulation and heat conduction medium.

[0022] The metal cap 3 is a high-temperature resistant metal shell with an inner cavity that is a cylindrical-frustum composite cavity. The diameter of the front opening is slightly larger than the outer contour of the thin-film platinum resistance chip 2, and the inner diameter of the rear end matches the outer diameter of the armored core 1.

[0023] High-temperature adhesives are a class of adhesives that maintain bonding strength, insulation performance, or structural stability under high-temperature environments. They are widely used in aerospace, metallurgy, power, and sensor manufacturing. They are primarily used to bond metal wires 11 and leads 21. The characteristics of high-temperature adhesives include: 1. High-temperature resistance: They do not soften, decompose, or fail under long-term or instantaneous high-temperature conditions, exhibiting a low rate of bond strength attenuation. 2. Resistance to thermal shock: They can withstand repeated heating-cooling cycles without cracking at the bonding interface due to thermal expansion and contraction. 3. Resistance to media corrosion: They can resist corrosion from water vapor, corrosive gases, acid and alkali solutions at high temperatures, maintaining stable performance. 4. Insulation / thermal conductivity options: Depending on requirements, insulating (suitable for sensor lead fixing) or thermally conductive (facilitating rapid heat conduction of the chip) types can be selected. When using high-temperature adhesives, the application thickness should be uniform, and the required temperature should be maintained during curing to avoid residual air bubbles that could cause interface cracking at high temperatures.

[0024] High-temperature protective materials are functional materials that maintain structural integrity, thermal insulation, corrosion resistance, or electrical insulation in high-temperature environments, protecting equipment, components, or structures from high-temperature damage. They are primarily used to protect metal caps (3), armored metal tubes (12), and thin-film platinum resistance chips (2), improving the high-temperature resistance and lifespan of wide-temperature-range thin-film platinum resistance sensor probes. The core performance characteristics of high-temperature protective materials are: 1. High-temperature stability: They do not soften, decompose, or volatilize at rated high temperatures, exhibiting low performance degradation over long-term service. 2. Adjustable thermal insulation / conductivity: They can be selected as either thermal insulation type (reducing heat loss or external high-temperature intrusion) or thermal conductivity type (aiding rapid response of temperature-sensing elements) depending on requirements. 3. Resistance to thermal shock: They can withstand repeated heating-cooling cycles without cracking or peeling. 4. Resistance to media corrosion: They resist corrosion from water vapor, corrosive gases, acids, alkalis, and salts at high temperatures. 5. Compatibility with substrates: They have good compatibility with the metal and ceramic components of sensors, with no significant mismatch in thermal expansion coefficients.

[0025] The synergistic effects of the various technical features are as follows: the armored core 1 provides the basic current-carrying and mechanical support path, while its dense magnesium oxide powder ensures high-temperature insulation and axial thermal conduction; the thin-film platinum resistance chip 2 serves as the temperature-sensing core, with its lead wire 21 and metal wire 11 forming the starting point of the electrical signal path; high-temperature adhesive coats and cures the solder joints; the uniform filling and secondary curing of the high-temperature protective material within the metal cap 3 cavity allows the thin-film platinum resistance chip 2 to be embedded in a composite package with a rigid-toughness gradient transition, buffering external impact energy and isolating thermal radiation and atmospheric corrosion; the butt welding of the metal cap 3 and the armored core 1 constructs a fully enclosed load-bearing ring on a macroscopic scale, transforming local encapsulation stress into overall structural pre-tightening force, preventing relative slippage of the thin-film platinum resistance chip 2 within the metal cap 3. The above structural hierarchy progresses step-by-step from microscopic solder joint reinforcement → mesoscopic interface encapsulation → macroscopic mechanical sealing, forming a four-fold protection mechanism of "electrical connection—mechanical anchoring—thermal decoupling—environmental isolation".

[0026] The wide-temperature-range thin-film platinum resistance sensor probe of this invention maintains excellent stability in both high-temperature and extremely low-temperature environments. Its long-term operating temperature range covers -196℃ to 850℃, and its short-term operating temperature can reach 950℃, with long-term temperature measurement stability better than ±1℃. This invention can achieve the above-mentioned full-temperature-range measurement requirements with only a single probe, breaking through the technical limitations of existing thin-film platinum resistance sensors—existing thin-film platinum resistance sensors require two probes to achieve temperature measurement from -196℃ to 850℃, with one probe adapted to the temperature range of -196℃ to -200℃ and the other probe adapted to the temperature range of -40℃ to 850℃.

[0027] This invention integrates the armored core 1 and the thin-film platinum resistance chip 2 into a single structure, providing the thin-film platinum resistance chip 2 with more reliable protection within the probe, especially in harsh applications subject to mechanical vibration and thermal shock. Furthermore, the wide-temperature-range thin-film platinum resistance sensor probe of this invention exhibits high stability, avoiding the instability phase commonly found in existing probes during initial use. This initial instability phase in existing probes easily leads to excessive temperature measurement accuracy, resulting in non-compliance with tolerance levels and ultimately reducing product yield. This invention, through its unique structural design and manufacturing process, fundamentally eliminates this technical problem.

[0028] Example 2 The difference between this embodiment 2 and embodiment 1 is that: before step S1, step S0 is included: the mating areas of the substrate 22 on the thin film platinum resistance chip 2 and the ceramic substrate 4 are bonded together by a high-temperature adhesive, and the lead wire 21 is located on the extension area of ​​the ceramic substrate 4, and a high-temperature curing process is performed.

[0029] Among them, the ceramic substrate 4 is an auxiliary support platform set independently of the substrate 22. Its size is set according to the shape of the thin film platinum resistance chip 2 and the layout requirements of the lead 21. It is used for the subsequent positioning and electrical connection of the lead 21. Its core function is to provide out-of-plane bending stiffness and in-plane dimensional stability that are much higher than those of the substrate 22, thereby suppressing the micro-vibration and warping deformation of the thin film platinum resistance chip 2 during assembly, transportation and service.

[0030] Lead 21 is located on the extended area of ​​ceramic substrate 4. The extended area specifically refers to the cantilevered or stepped layered structure area that extends from the ceramic substrate 4 outside the projected outline of substrate 22. The length extension direction is consistent with the direction of lead 21. This design allows lead 21 to be directly connected and fixed to the surface of ceramic substrate 4 after it is led out from the edge of thin film platinum resistance chip 2, rather than being suspended or only attached to the edge of substrate 22. This forms a "double fulcrum support": one end is anchored to the pad on substrate 22, and the other end relies on the metallized pad in the extended area of ​​ceramic substrate 4, which significantly improves the shear and bending resistance of lead 21.

[0031] The ceramic substrate 4 forms a rigid composite with the substrate 22 through a high-temperature adhesive, which gives the originally flexible suspended thin-film platinum resistance chip 2 a macroscopic geometric constraint. The lead 21 is located in the extension area of ​​the ceramic substrate 4, which not only extends its mechanical support path, but also unifies its electrical connection reference to a high-rigidity platform. Thus, during the laser welding process in step S1, the risk of lead 21 displacement and poor soldering caused by local thermal deformation is effectively suppressed. At the same time, this pre-fixed structure greatly reduces the dynamic impact load on the thin-film platinum resistance chip 2 when the high-temperature protective material is filled in step S3 and the metal cap 3 is laser welded in step S4, avoiding micro-cracks or desoldering at the connection between the temperature sensing end and the lead 21.

[0032] Compared to the technical solution of Embodiment 1, this application achieves dual reinforcement of the thin-film platinum resistance chip 2 through pre-rigid reinforcement and spatial positioning of the lead wire 21 without changing the manufacturing process in Embodiment 1. Because the ceramic substrate 4 provides a high-modulus support platform, the high-temperature adhesive ensures the interface stability under high-temperature service, and the layout of the lead wire 21 in the extension area optimizes the force flow transmission path, the impact resistance and structural stability of the thin-film platinum resistance chip 2 are significantly improved throughout the manufacturing and service process. This fundamentally alleviates the problems of easy chip shaking and easy breakage at the temperature sensing end connection under external impact, thereby improving the reliability, yield, and long-term measurement accuracy consistency of the wide-temperature-range thin-film platinum resistance sensor probe.

[0033] Example 3 This invention provides a wide-temperature-range thin-film platinum resistance sensor probe, comprising an armored core 1, a thin-film platinum resistance chip 2, and a metal cap 3. The metal wires 11 on the armored core 1 are connected one-to-one with the leads 21 on the thin-film platinum resistance chip 2 and cured with a high-temperature adhesive. The metal cap 3 is fitted over a portion of the armored core 1 and the thin-film platinum resistance chip 2. The metal cap 3 is filled with a high-temperature protective material. A portion of the armored core 1 and the thin-film platinum resistance chip 2 are inserted into and fixed inside the metal cap 3. The mating area between the metal cap 3 and the armored core 1 is welded together. The one-to-one connection between the metal wire 11 and the lead 21 ensures the determinism of the electrical signal path and low contact resistance; the high-temperature adhesive curing not only strengthens the solder joint interface, but also constructs the metal wire 11, lead 21 and substrate 22 into a rigid force transmission unit, significantly suppressing local bending deformation; the rigid covering and welding seal of the metal cap 3 constitute the first level of external protection, resisting mechanical collisions and the penetration of corrosive media; the internal high-temperature protective material constitutes the second level of dynamic buffer layer, absorbing relative displacement energy during vibration or thermal expansion and contraction, and preventing stress from being directly transmitted to the interface between the brittle ceramic substrate and the platinum film; and the deep fit between the armored core 1 and the metal cap 3 structurally eliminates the possibility of the thin-film platinum resistance chip 2 moving axially.

[0034] Through the above technical solutions, this application achieves the following: while maintaining the inherent high sensitivity and fast response characteristics of thin-film platinum resistance thermometers, it significantly improves the overall shock resistance and long-term operational stability of the probe. High-temperature adhesive curing upgrades the connection point of metal wire 11 – lead 21 from "point contact + solder joint" to "surface constraint + ceramic encapsulation," greatly improving the fatigue life of this weak link. The welded connection between the metal cap 3 and the armored core 1 forms a fully enclosed cavity, isolating the lead metal from the high-temperature oxidizing atmosphere. The filling of high-temperature protective material effectively homogenizes the thermal expansion mismatch stress between the armored core 1 and the thin-film platinum resistance chip 2, preventing warping or debonding caused by differences in thermal expansion coefficients. Therefore, this structure effectively solves the common problems of poor chip shock resistance and unstable connection, providing a structural foundation for the reliable application of wide-temperature-range thin-film platinum resistance sensor probes under extreme conditions.

[0035] Example 4 The difference between this embodiment four and embodiment two is that it also includes a ceramic substrate 4. The ceramic substrate 4 is bonded to the substrate 22 on the thin film platinum resistance chip 2 by a high temperature adhesive. The lead wire 21 and the metal wire 11 are both located on the extension area of ​​the ceramic substrate 4. The ceramic substrate 4 is inserted into and fixed in the metal cap 3.

[0036] By introducing a ceramic substrate 4 as a rigid support interlayer for the thin-film platinum resistance chip 2, and forming a multi-level integrated package with the substrate 22, leads 21, metal wires 11, and metal cap 3, the structural stability and long-term reliability of the wide-temperature-range thin-film platinum resistance sensor probe under combined thermal cycling and mechanical vibration conditions are significantly improved. The ceramic substrate 4 serves as the planar support for the thin-film platinum resistance chip 2 and also as a coplanar platform for the electrical lead-out paths, making the connection layout of leads 21 and metal wires 11 more regular and the stress distribution more uniform. Its nested fixing relationship with the metal cap 3 further constrains the overall axial and radial degrees of freedom of the thin-film platinum resistance chip 2, effectively suppressing interface micro-slippage and solder joint fatigue fracture caused by thermal expansion mismatch or external impact.

[0037] The ceramic substrate 4 serves as an intermediate structural unit, forming a thermodynamically stable and strong bonding interface with the substrate 22 through a high-temperature adhesive. Furthermore, its extended region provides a coplanar, common-reference welding platform for the lead wire 21 and the metal wire 11, eliminating the risk of lead wire suspension caused by warping or thickness deviation of the substrate 22. Since the ceramic substrate 4 is embedded and fixed inside the metal cap 3, it no longer relies on direct contact between the thin-film platinum resistance chip 2 and the metal cap 3 for force transmission. Instead, all loads (thermal stress, vibration inertial force, and assembly clamping force) are evenly distributed to the inner wall of the metal cap 3 via the rigid ceramic body. This fundamentally avoids the inherent defects of traditional structures, such as chip fragility under direct force and stress concentration at the lead wire roots. It achieves a three-level nested rigid support system, combining the thin-film platinum resistance chip 2, ceramic substrate 4, and metal cap 3, while maintaining the high sensitivity and fast response characteristics of the thin-film platinum resistance chip 2.

[0038] The wide-temperature-range thin-film platinum resistance sensor probe of this application is subjected to 850°C. The C thermal shock test consisted of 500 thermal shocks, and the specific steps were as follows: 1. Measurement of a wide-temperature-range thin-film platinum resistance sensor probe at 0°C Find and record the resistance value of C; 2. Place the wide-temperature-range thin-film platinum resistance sensor probe into an environment where the temperature has reached 850°C. Place it in a dry oven at C and keep it for 3 minutes; 3. Quickly remove the wide-temperature-range thin-film platinum resistance sensor probe from the dry block oven and let it stand at room temperature for 2 minutes; 4. Repeat steps 2-3 a total of 499 times; 5. Measure the wide-temperature-range thin-film platinum resistance sensor probe again at 0°C. Find and record the resistance value of C; 6. Compare the changes in resistance R0 before and after the experiment.

[0039] The experimental results are shown in the data provided. Figure 4 .

[0040] The wide-temperature-range thin-film platinum resistance sensor probe of this application is subjected to 850°C. The long-term stability test of C, totaling 1000 hours, is conducted as follows: 1. Measurement of a wide-temperature-range thin-film platinum resistance sensor probe at 0°C Find and record the resistance value of C; 2. Place the wide-temperature-range thin-film platinum resistance sensor probe into a dry-block oven at room temperature, and heat the dry-block oven to 850°C. C, and maintain the temperature for the required time of the experiment; 3. This will raise the temperature of the dry block furnace from 850. C drops to room temperature; 4. Remove the wide-temperature-range thin-film platinum resistance sensor probe from the dry block oven and perform probe 0... Test C and record the results; 5. Compare the changes in the resistance value of R0 before and after the experiment.

[0041] The experimental results are shown in the data provided. Figure 5 .

[0042] The wide-temperature-range thin-film platinum resistance sensor probe of this application is subjected to low-temperature testing at -196°C. The impact test for C consisted of 500 low-temperature impacts. The low-temperature impact test procedure is as follows: 1. Measurement of a wide-temperature-range thin-film platinum resistance sensor probe at 0°C Find and record the resistance value of C; 2. Place the wide-temperature-range thin-film platinum resistance sensor probe into a 10-liter liquid nitrogen bottle and keep it there for 3 minutes; 3. Quickly remove the wide-temperature-range thin-film platinum resistance sensor probe from the liquid nitrogen bottle and leave it at room temperature for 2 minutes; 4. Repeat steps 2-3 a total of 499 times; 5. Measure the wide-temperature-range thin-film platinum resistance sensor probe again at 0°C. Find and record the resistance value of C; 6. Compare the changes in resistance R0 before and after the experiment.

[0043] The experimental results are shown in the data provided. Figure 6 .

[0044] The wide-temperature-range thin-film platinum resistance sensor probe of this application is subjected to low-temperature testing at -196°C. C. A total of 500 hours of long-term stability testing was conducted, and the specific steps are as follows: 1. Measurement of a wide-temperature-range thin-film platinum resistance sensor probe at 0°C Find and record the resistance value of C; 2. Place the wide-temperature-range thin-film platinum resistance sensor probe into a 10-liter liquid nitrogen bottle, and maintain the liquid nitrogen temperature to the required experimental time. If the liquid nitrogen is insufficient, refill the bottle with liquid nitrogen, ensuring the liquid nitrogen bottle is always maintained at the appropriate temperature of approximately -196°C. C.

[0045] 3. Remove the wide-temperature-range thin-film platinum resistance sensor probe from the liquid nitrogen bottle containing liquid nitrogen and allow the probe temperature to reach room temperature; 4. Perform 0°C testing on the wide-temperature-range thin-film platinum resistance sensor probe. Test C and record the results; 5. Compare the changes in the resistance value of R0 before and after the experiment.

[0046] The experimental results are shown in the data provided. Figure 7 .

[0047] The above description is merely a specific embodiment of the present invention, but the scope of protection of the present invention is not limited thereto. Any variations or substitutions that can be easily conceived by those skilled in the art within the technical scope disclosed in the present invention should be included within the scope of protection of the present invention. Therefore, the scope of protection of the present invention should be determined by the scope of the claims.

Claims

1. A method for manufacturing a wide-temperature-range thin-film platinum resistance sensor probe, characterized in that, The following steps are included: Step S1: Solder the metal wire (11) on the armored core (1) to the lead wire (21) on the thin film platinum resistance chip (2); Step S2: Apply high-temperature adhesive to the metal wire (11) and the lead wire (21) and perform high-temperature curing treatment; Step S3: Fill the metal cap (3) with high-temperature protective material, then insert a portion of the armored core (1) and the thin-film platinum resistance chip (2) into the metal cap (3) and perform high-temperature curing treatment; Step S4: Weld the mating area of ​​the metal cap (3) and the armored core (1) to form a wide temperature range thin film platinum resistance sensor probe.

2. The method for manufacturing a wide-temperature-range thin-film platinum resistance sensor probe according to claim 1, characterized in that, Before step S1, step S0 is also included: bonding the mating areas of the substrate (22) on the thin film platinum resistance chip (2) and the ceramic substrate (4) together with a high-temperature adhesive, and the lead (21) is located on the extension area of ​​the ceramic substrate (4) and is subjected to high-temperature curing treatment.

3. The method for manufacturing a wide-temperature-range thin-film platinum resistance sensor probe according to claim 1, characterized in that, In step S1, the metal wire (11) and the lead wire (21) are connected by laser welding machine; In step S4, the mating areas of the metal cap (3) and the armor core (1) are welded together using a laser welding machine.

4. The method for manufacturing a wide-temperature-range thin-film platinum resistance sensor probe according to claim 1, characterized in that, The number of metal wires (11) and the number of leads (21) are both two, and the metal wires (11) and leads (21) are connected in a one-to-one correspondence.

5. The method for manufacturing a wide-temperature-range thin-film platinum resistance sensor probe according to claim 1, characterized in that, The armored core (1) includes an armored metal tube (12) and a metal wire (11), the metal wire (11) passing through the armored metal tube (12), and the armored metal tube (12) is filled with magnesium oxide powder.

6. A wide-temperature-range thin-film platinum resistance sensor probe, characterized in that, The device includes an armored core (1), a thin-film platinum resistance chip (2), and a metal cap (3). The metal wires (11) on the armored core (1) are connected one-to-one with the leads (21) on the thin-film platinum resistance chip (2) and cured with a high-temperature adhesive. The metal cap (3) is fitted onto a portion of the armored core (1) and the thin-film platinum resistance chip (2). The metal cap (3) is filled with a high-temperature protective material. A portion of the armored core (1) and the thin-film platinum resistance chip (2) are inserted into and fixed inside the metal cap (3). The metal cap (3) and the armored core (1) are welded together at their mating areas.

7. The wide-temperature-range thin-film platinum resistance sensor probe according to claim 6, characterized in that, It also includes a ceramic substrate (4), which is bonded to the substrate (22) on the thin film platinum resistance chip (2) by a high temperature adhesive. The lead (21) and the metal wire (11) are both located on the extension area of ​​the ceramic substrate (4), and the ceramic substrate (4) is inserted into and fixed in the metal cap (3).

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