Thermal conductivity measuring system and measuring method

Abstract

The invention discloses a thermal conductivity measuring system and a thermal conductivity measuring method. The system comprises a to-be-tested sample, a heating unit, an infrared imaging unit and a data processing terminal, a closed cavity is formed in the to-be-tested sample, the closed cavity is filled with liquid metal, the to-be-tested sample is connected with the heating unit, the heating unit is connected with the data processing terminal, and the data processing terminal is connected with the infrared imaging unit; the heating unit is used for heating the sample to be detected; the infrared imaging unit is used for acquiring a thermal form image of the sample to be detected and transmitting the thermal form image to the data processing terminal; the data processing terminal is used for reading the electric power data of the heating unit and determining the heat conductivity of the to-be-detected sample according to the electric power data and the thermal form image. The method provided by the invention at least solves the technical problem of lack of a thermal form image in the to-be-detected sample due to the fact that a thermal conductivity measuring system in the related technology can only measure the thermal conductivity.

Description

Technical Field

[0001] This application relates to the field of industrial automation control technology, and more specifically, to a thermal conductivity measurement system and method. Background Technology

[0002] With the continuous improvement of power density in microelectronic devices, liquid metal has become a promising advanced heat dissipation medium due to its excellent thermal conductivity. In particular, embedding liquid metal in silicon-based microcavity structures can achieve efficient thermal management of local hot spots. However, current research on the performance of this composite structure faces fundamental technical bottlenecks. First, the opacity of silicon in the visible and near-infrared bands prevents traditional optical observation methods from directly observing the interior of sealed cavities, thus limiting thermal morphology analysis. Existing methods either rely on destructive offline disassembly or use transparent materials with vastly different thermal properties as substitutes, neither of which can accurately reflect the dynamic thermal morphology of liquid metal under actual silicon-based operating conditions. Simultaneously, existing thermal conductivity measurement methods mostly rely on external temperature sensors or indirect calculations. For example, contact temperature probes interfere with the internal thermal and flow fields, introducing significant errors and failing to capture the true thermal conduction characteristics of liquid metal within a closed cavity, resulting in low measurement accuracy. Therefore, in-situ, real-time thermal property characterization of liquid metal sealed within microcavities is impossible.

[0003] The existing technology system suffers from a serious "system separation" problem. That is, the observation of the thermal morphology of liquid metal and the measurement of the thermal properties of the embedded liquid metal adapter are usually separated into two independent processes, requiring different equipment. This separation leads to numerous drawbacks such as cumbersome operation, asynchronous data, and high costs. More importantly, it hinders researchers from directly correlating observed dynamic thermal phenomena with measured thermal conductivity data under the same conditions and at the same time, making it difficult to deeply reveal the underlying heat transport mechanism. Although single-crystal silicon is known to have transmission properties in the mid-infrared band (3-5μm), current technology has failed to effectively utilize this physical property to develop an integrated system capable of simultaneously achieving in-situ visualization of the intracavity thermal morphology and precise measurement of thermal conductivity. This technological blind spot severely restricts the development progress of high-performance embedded liquid metal adapters. Summary of the Invention

[0004] This application provides a thermal conductivity measurement system and method to at least solve the technical problem in related technologies where thermal conductivity measurement systems can only measure thermal conductivity, resulting in the lack of thermal morphology images of the sample under test.

[0005] According to one aspect of the embodiments of this application, a thermal conductivity measurement system is provided, comprising: a sample to be tested, a heating unit, an infrared imaging unit, and a data processing terminal, wherein the sample to be tested has a sealed cavity filled with liquid metal, the sample to be tested is connected to the heating unit, the heating unit is connected to the data processing terminal, and the data processing terminal is connected to the infrared imaging unit; the heating unit is used to heat the sample to be tested; the infrared imaging unit is used to acquire a thermal morphology image of the sample to be tested and transmit the thermal morphology image to the data processing terminal; the data processing terminal is used to read the power data of the heating unit and determine the thermal conductivity of the sample to be tested based on the power data and the thermal morphology image.

[0006] Optionally, the heating unit includes: a heating element and a DC regulated power supply, wherein the heating element and the DC regulated power supply are connected; the DC regulated power supply is used to provide voltage to the heating element; the heating element is used to heat the sample to be tested until the temperature difference between two measurement points in the sample to be tested reaches a steady state.

[0007] Optionally, the infrared imaging unit includes a mid-wave infrared thermal imager, wherein the optical axis of the mid-wave infrared thermal imager is aligned with the central region of the sample to be tested.

[0008] Optionally, the sample to be tested includes a silicon-based adapter board.

[0009] Optionally, the data processing terminal is further configured to acquire the distance between the two measurement points, the output power of the DC regulated power supply when the temperature difference between the two measurement points in the sample under test reaches a steady state, and the cross-sectional area of ​​the sample under test.

[0010] The data processing terminal is also used to obtain the temperature difference value between two measurement points of the sample under test when the temperature difference reaches a steady state from the thermal morphology image.

[0011] Optionally, the data processing terminal is further configured to determine the thermal conductivity of the sample under test based on the distance between the two measurement points, the output power of the DC regulated power supply when the temperature difference between the two measurement points in the sample under test reaches a steady state, the cross-sectional area of ​​the sample under test, and the temperature difference value when the temperature difference between the two measurement points in the sample under test reaches a steady state.

[0012] Optionally, the DC regulated power supply is also used to output different voltages to the heating element, wherein the different voltages are used to determine the thermal conductivity of the sample under test at different voltages.

[0013] According to another aspect of the embodiments of this application, a method for measuring thermal conductivity is also provided, comprising: acquiring multi-dimensional data of a sample to be tested, wherein the multi-dimensional data includes at least: power data of a DC regulated power supply in a thermal conductivity measurement system and a thermal morphology image of the sample to be tested, wherein the sample to be tested has a sealed cavity inside, and the sealed cavity is filled with liquid metal; and determining the thermal conductivity of the sample to be tested based on the multi-dimensional data of the sample to be tested.

[0014] Optionally, determining the thermal conductivity of the sample under test based on multi-dimensional data of the sample under test includes: acquiring the distance between two measurement points in the sample under test, the cross-sectional area of ​​the sample under test, the electrical data, and the thermal morphology image, wherein the electrical data includes: the output power of the DC regulated power supply when the temperature difference between the two measurement points in the sample under test reaches a steady state; extracting the temperature difference value between the two measurement points in the sample under test when the temperature difference reaches a steady state from the thermal morphology image; and determining the thermal conductivity of the sample under test based on the distance between the two measurement points, the output power of the DC regulated power supply when the temperature difference between the two measurement points in the sample under test reaches a steady state, the cross-sectional area of ​​the sample under test, and the temperature difference value between the two measurement points in the sample under test when the temperature difference reaches a steady state.

[0015] According to another aspect of the embodiments of this application, a method for embedding liquid metal in a silicon-based adapter plate is also provided, comprising: heating the liquid metal to a target temperature, wherein the target temperature is higher than the melting point temperature of the liquid metal; filling the liquid metal at the target temperature into a sealed cavity in the base adapter plate until the filling rate of the liquid metal in the sealed cavity reaches a preset value; and sealing the potting opening of the base adapter plate with a low-temperature ceramic adhesive.

[0016] According to another aspect of the embodiments of this application, a computer device is also provided, including: a memory and a processor, wherein the memory is used to store program instructions; and the processor, connected to the memory, is used to execute the above-described thermal conductivity measurement method.

[0017] According to another aspect of the embodiments of this application, a computer program product is also provided, including computer instructions that, when executed by a processor, implement the above-described thermal conductivity measurement method.

[0018] In this embodiment, a thermal conductivity testing system is constructed using a sample to be tested, a heating unit, an infrared imaging unit, and a data processing terminal. The sample to be tested contains a sealed cavity filled with liquid metal. The sample to be tested is connected to the heating unit, which is connected to the data processing terminal, which is connected to the infrared imaging unit. The heating unit heats the sample to be tested. The infrared imaging unit acquires a thermal morphology image of the sample and transmits it to the data processing terminal. The data processing terminal reads the power data of the heating unit and determines the thermal conductivity of the sample based on the power data and the thermal morphology image. The infrared imaging device images the state of the liquid metal within the sealed cavity, analyzes the thermal morphology image, and measures the thermal conductivity. This achieves the goal of simultaneously measuring thermal conductivity and acquiring the thermal morphology image of the liquid metal, thereby solving the technical problem in related technologies where thermal conductivity measurement systems can only measure thermal conductivity, resulting in the lack of thermal morphology images of the sample to be tested. Attached Figure Description

[0019] The accompanying drawings, which are included to provide a further understanding of this application and form part of this application, illustrate exemplary embodiments and are used to explain this application, but do not constitute an undue limitation of this application. In the drawings:

[0020] Figure 1 This is a schematic diagram of a thermal conductivity measurement system according to an embodiment of this application;

[0021] Figure 2 This is a schematic diagram of another thermal conductivity measurement system according to an embodiment of this application;

[0022] Figure 3 This is a schematic diagram of the structure of another thermal conductivity measurement system according to an embodiment of this application;

[0023] Figure 4 This is a schematic diagram of the connection between a sample to be tested and a heating unit according to an embodiment of this application;

[0024] Figure 5 This is a schematic flowchart of a thermal conductivity measurement method according to an embodiment of this application;

[0025] Figure 6 This is a schematic diagram of a thermal morphology image interface according to an embodiment of this application;

[0026] Figure 7 This is a flowchart of a method for embedding liquid metal in a silicon-based adapter board according to an embodiment of this application. Detailed Implementation

[0027] To enable those skilled in the art to better understand the present application, the technical solutions in the embodiments of the present application will be clearly and completely described below with reference to the accompanying drawings. Obviously, the described embodiments are only some embodiments of the present application, and not all embodiments. Based on the embodiments in the present application, all other embodiments obtained by those of ordinary skill in the art without creative effort should fall within the scope of protection of the present application.

[0028] It should be noted that the terms "first," "second," etc., in the specification, claims, and accompanying drawings of this application are used to distinguish similar objects and are not necessarily used to describe a specific order or sequence. It should be understood that such data can be interchanged where appropriate so that the embodiments of this application described herein can be implemented in orders other than those illustrated or described herein. Furthermore, the terms "comprising" and "having," and any variations thereof, are intended to cover non-exclusive inclusion; for example, a process, method, system, product, or apparatus that comprises a series of steps or units is not necessarily limited to those steps or units explicitly listed, but may include other steps or units not explicitly listed or inherent to such processes, methods, products, or apparatus.

[0029] The information collected in this application embodiment is information and data authorized by the user or fully authorized by all parties. The collection, storage, use, processing, transmission, provision, disclosure and application of the relevant data all comply with the relevant laws, regulations and standards of the relevant regions, and necessary confidentiality measures have been taken. It does not violate public order and good morals, and provides corresponding operation entry points for users to choose to authorize or reject the automated decision results. If the user chooses to reject, the process will proceed to the expert decision-making process.

[0030] Figure 1 This is a schematic diagram of a thermal conductivity measurement system according to an embodiment of this application, as shown below. Figure 1 As shown, the system includes:

[0031] The sample to be tested is 10, the heating unit is 20, the infrared imaging unit is 30, and the data processing terminal is 40. The sample to be tested is provided with a sealed cavity, which is filled with liquid metal. The sample to be tested is connected to the heating unit 20, the heating unit 20 is connected to the data processing terminal 40, and the data processing terminal 40 is connected to the infrared imaging unit 30.

[0032] The heating unit 20 is used to heat the sample to be tested; the infrared imaging unit 30 is used to acquire the thermal morphology image of the sample to be tested 10 and transmit the thermal morphology image to the data processing terminal 40.

[0033] The data processing terminal 40 is used to read the power data of the heating unit 20 and determine the thermal conductivity of the sample to be tested based on the power data and the thermal morphology image.

[0034] The aforementioned thermal conductivity measurement system comprises a sample to be tested, a heating unit, an infrared imaging unit, and a data processing terminal. The sample to be tested contains a sealed cavity filled with liquid metal. The sample is connected to the heating unit, which is in turn connected to the data processing terminal, which is also connected to the infrared imaging unit. The heating unit heats the sample. The infrared imaging unit acquires thermal morphology images of the sample and transmits them to the data processing terminal. The data processing terminal reads the power data from the heating unit and determines the thermal conductivity of the sample based on the power data and the thermal morphology images. The infrared imaging device images the state of the liquid metal within the sealed cavity and analyzes the thermal morphology images to measure the thermal conductivity. This achieves the goal of simultaneously measuring thermal conductivity and acquiring thermal morphology images of the liquid metal, thus solving the technical problem in related technologies where thermal conductivity measurement systems only measure thermal conductivity, resulting in the lack of thermal morphology images of the sample. A detailed explanation follows.

[0035] like Figure 2 As shown, the heating unit 20 includes a heating element 201 and a DC regulated power supply 202, wherein the heating element 201 and the DC regulated power supply 202 are connected; the DC regulated power supply 202 is used to provide voltage to the heating element 201; the heating element 201 is used to heat the sample 10 to be tested until the temperature difference between the two measurement points of the sample 10 to be tested reaches a steady state.

[0036] The infrared imaging unit 30 includes a mid-wave infrared thermal imager, wherein the optical axis of the mid-wave infrared thermal imager is aligned with the central region of the sample 10 under test. The sample 10 under test includes a silicon-based adapter plate.

[0037] The data processing terminal 40 is also used to acquire the distance between the two measurement points and the output power of the DC regulated power supply when the temperature difference between the two measurement points in the sample to be tested reaches a steady state, and the cross-sectional area of ​​the sample to be tested; the data processing terminal is also used to acquire the temperature difference value between the two measurement points in the sample to be tested when the temperature difference reaches a steady state from the thermal morphology image.

[0038] It should also be noted that the data processing terminal 40 is also used to determine the thermal conductivity of the sample under test based on the distance between the two measurement points, the output power of the DC regulated power supply 202 when the temperature difference between the two measurement points of the sample under test reaches a steady state, the cross-sectional area of ​​the sample under test 10, and the temperature difference value when the temperature difference between the two measurement points of the sample under test reaches a steady state.

[0039] It is understood that the DC regulated power supply 202 is also used to output different voltages to the heating element 201, wherein the different voltages are used to determine the thermal conductivity of the sample under test at different voltages.

[0040] To better illustrate the thermal conductivity measurement system proposed in this application, another thermal conductivity measurement system is also provided in the embodiments of this application, such as... Figure 3 As shown, it includes: the sample to be tested and the heating unit (the silicon-based adapter board to be tested, the side heating element powered by the constant voltage source, and the DC regulated power supply), the infrared imaging and temperature measurement unit (mid-wave infrared thermal imager), and the data processing and control unit (a computer integrating control and infrared image processing software).

[0041] Figure 4 A schematic diagram of a sample under test being placed in a heating unit is shown, as follows: Figure 4 As shown, the heating element is located on the side of the adapter plate sample to be tested for heating.

[0042] The heating element on the side of the silicon-based adapter plate is connected to a DC regulated power supply via wires, forming a heating circuit. The optical axis of the infrared thermal imager is aligned with the central area of ​​the adapter plate to acquire thermal morphology images. Furthermore, the infrared thermal imager is connected to a computer via a data cable to transmit the acquired thermal image data to software for processing. The DC regulated power supply enables the reading of power, current, and voltage parameters, facilitating the measurement of the thermal conductivity of the silicon-embedded liquid metal adapter plate.

[0043] Based on the thermal conductivity measurement system proposed in the embodiments of this application, a thermal conductivity measurement method is also proposed in the embodiments of this application, comprising: acquiring multi-dimensional data of the sample to be tested, wherein the multi-dimensional data includes at least: power data of the DC regulated power supply in the thermal conductivity measurement system and thermal morphology image of the sample to be tested, wherein the sample to be tested has a sealed cavity inside, and the sealed cavity is filled with liquid metal; and determining the thermal conductivity of the sample to be tested based on the multi-dimensional data of the sample to be tested.

[0044] In some embodiments of this application, the specific steps for determining the thermal conductivity of the sample under test based on multi-dimensional data of the sample under test are as follows: acquiring the distance between two measurement points in the sample under test, the cross-sectional area of ​​the sample under test, electrical data, and the thermal morphology image, wherein the electrical data includes: the output power of a DC regulated power supply when the temperature difference between the two measurement points in the sample under test reaches a steady state; extracting the temperature difference value between the two measurement points in the sample under test when the temperature difference reaches a steady state from the thermal morphology image; determining the thermal conductivity of the sample under test based on the distance between the two measurement points, the output power of the DC regulated power supply when the temperature difference between the two measurement points in the sample under test reaches a steady state, the cross-sectional area of ​​the sample under test, and the temperature difference value between the two measurement points in the sample under test when the temperature difference reaches a steady state.

[0045] like Figure 5 As shown in the embodiments of this application, another method for measuring thermal conductivity is also proposed, such as... Figure 5 As shown, it includes:

[0046] Step 1: Measure the lateral area S of the adapter plate to be tested;

[0047] Step 2: Fix the adapter plate to be tested to the heating element;

[0048] Step 3: Connect the components of the measurement system and adjust the focus of the infrared lens;

[0049] Step 4: Adjust the DC power supply to make the heating element work normally, simulating a single-sided heat source on the adapter board;

[0050] Step 5, thermal conductivity measurement: After the temperature difference stabilizes, read the temperature difference between the two measurement points;

[0051] Step 6, In-situ observation of thermal morphology: Acquire thermal morphology images during the heating process.

[0052] Specifically, step 1 involves measuring the geometric dimensions of the sample to be tested: the cross-sectional area of ​​the sample to be tested;

[0053] Step 2: In order to maintain the heat transfer efficiency of the heating element to the silicon embedded liquid metal adapter plate under test as much as possible, the heating element is fixed in the pre-customized slot with heat-insulating tape, and the side of the adapter plate under test is tightly attached to the heating element with thermally conductive silicone grease with good thermal conductivity.

[0054] Step 3: Connect the voltage source to the corresponding positive and negative terminals of the heating element, connect the thermal infrared measuring instrument to the computer with infrared image processing software, and after opening the software, first adjust the focus so that the entire adapter board under test can be clearly seen.

[0055] Step 4: Turn on the DC power supply and set a reasonable voltage. Control the power output through the voltage source to ensure a stable heating process and avoid overshoot or power fluctuations. Adjust it to a suitable power so that the heating element is in the normal operating range, thereby simulating the single-sided heat source of the adapter plate.

[0056] Step 5: Using the thermal infrared software, track two measurement points spaced d apart on the real-time image, with temperatures t1 and t2 respectively. Once the temperature difference between the two points stabilizes, record the temperature difference ΔT using a thermal infrared meter, and also record the power P of the heating element at this time.

[0057] Step 6: To achieve in-situ observation of the thermal state of the liquid metal, during the entire heating process, the software can be set to automatically capture thermal state images of the liquid metal inside the adapter plate at regular intervals, such as... Figure 6 As shown, the thermal state of liquid metal and the changing trend of internal bubbles can be observed. In the narrow enclosed space, the nitrogen gas inside will expand due to the increase in temperature, thereby generating a local pressure gradient. This pressure gradient drives the liquid metal to flow to the low temperature region, thus realizing the transfer of heat.

[0058] Step 7: Calculate the thermal conductivity. Substitute the parameters obtained in the above steps into the following formula to obtain the thermal conductivity of the adapter plate under this heating power.

[0059]

[0060] In the formula, λ represents thermal conductivity, P represents the output power of the DC regulated power supply when the temperature difference between the two measurement points of the sample reaches steady state, d represents the pre-input distance between the two measurement points, ΔT represents the steady-state temperature difference extracted from the thermal pattern diagram, and S represents the cross-sectional area of ​​the sample.

[0061] It should be noted that, to reduce errors, steps 4 and 5 can be repeated under different voltage settings. The thermal conductivity of the adapter plate under several voltage settings is measured, and then the average thermal conductivity of the adapter plate under different operating conditions can be obtained by averaging.

[0062] To better illustrate the thermal conductivity measurement method proposed in the embodiments of this application, this application proposes another thermal conductivity measurement method, for example: the following gives the measurement method for the potting medium as follows: The process of measuring the thermal conductivity of the silicon-embedded liquid metal adapter plate: First, the contact area S between the silicon-embedded liquid metal adapter plate (hereinafter referred to as the adapter plate) and the heating element is measured, thus determining the parameter of the thermal conductivity calculation formula as 15.8. 1 =15.8 ;

[0063] To maintain the heat transfer efficiency of the heat source, the adapter plate is tightly fixed to the heating element with thermal grease and then fixed to the base of the measuring device. According to... Figure 3 Connect the entire system and adjust the focus of the infrared lens so that the adapter board under test is clearly visible in the measurement window. Turn on the DC power supply and gradually increase the voltage within the normal operating voltage range of the heating element. Select two measurement points t1 and t2 on the infrared image. Simultaneously observe the temperature difference between the two measurement points t1 and t2 on the infrared image and record the distance between the two points d = 14 mm. When the temperature difference stabilizes, record the temperature difference t2 - t1 = 4.7℃. Record the stable power of the DC power supply P = 3.2 W. Finally, substitute the thermal conductivity formula to calculate the tested thermal conductivity of the adapter board as 659.84 W / (m²). k).

[0064] This application also proposes a method for embedding liquid metal in a silicon-based adapter plate to prepare the test sample in this application embodiment, comprising: heating the liquid metal to a target temperature, wherein the target temperature is higher than the melting point temperature of the liquid metal; filling the liquid metal at the target temperature into a sealed cavity in the base adapter plate until the filling rate of the liquid metal in the sealed cavity reaches a preset value; and sealing the potting opening of the base adapter plate with a low-temperature ceramic adhesive.

[0065] like Figure 7 As shown, the process includes: First, the silicon substrate must undergo pre-processing and ensure its surface is clean and free of impurities to avoid affecting the flow of liquid metal. Before potting, the liquid metal must be preheated above its melting point and slowly injected into the substrate's pre-set cavity under vacuum negative pressure using a self-developed potting system. This process is carried out in a protective atmosphere (such as nitrogen) to prevent adverse reactions. The potting equipment, including the heating device and potting system, needs to be pre-set and calibrated. During potting, the substrate temperature is controlled by a programmable heating tray to optimize the flow and filling of liquid metal. When the liquid metal filling rate reaches the design requirements, potting is stopped to allow space for subsequent heat treatment to accommodate thermal expansion and contraction. The entire liquid metal potting process requires precise temperature control, flow rate management, and filling volume control. After the silicon substrate filled with liquid metal is removed from the liquid metal cryogenic container, a cryogenic ceramic binder is extruded into the potting port under a nitrogen atmosphere. After the ceramic binder has initially solidified, the silicon substrate is placed in a controlled heating environment to allow the ceramic binder to solidify and form a stable bond between the ceramic binder and the substrate. Finally, visual inspection and X-ray non-destructive testing are used to ensure that the product meets design requirements and is free of internal defects, thus guaranteeing the quality and performance of the silicon-embedded liquid metal adapter board.

[0066] This application also provides a computer device, including: a memory and a processor, wherein the memory is used to store program instructions; and the processor, connected to the memory, is used to execute the above-described thermal conductivity measurement method.

[0067] This application also provides a computer program product, including computer instructions that, when executed by a processor, implement the steps of the thermal conductivity measurement method in this application.

[0068] The sequence numbers of the embodiments in this application are for descriptive purposes only and do not represent the superiority or inferiority of the embodiments.

[0069] In the above embodiments of this application, the descriptions of each embodiment have different focuses. For parts not described in detail in a certain embodiment, please refer to the relevant descriptions of other embodiments.

[0070] In the several embodiments provided in this application, it should be understood that the disclosed technical content can be implemented in other ways. The device embodiments described above are merely illustrative; for example, the division of units can be a logical functional division, and in actual implementation, there may be other division methods. For instance, multiple units or components may be combined or integrated into another system, or some features may be ignored or not executed. Furthermore, the displayed or discussed mutual coupling, direct coupling, or communication connection may be through some interfaces; the indirect coupling or communication connection between units or modules may be electrical or other forms.

[0071] The units described as separate components may or may not be physically separate. The components shown as units may or may not be physical units; that is, they may be located in one place or distributed across multiple units. Some or all of the units can be selected to achieve the purpose of this embodiment according to actual needs.

[0072] Furthermore, the functional units in the various embodiments of this application can be integrated into one processing unit, or each unit can exist physically separately, or two or more units can be integrated into one unit. The integrated unit can be implemented in hardware or as a software functional unit.

[0073] If the integrated unit is implemented as a software functional unit and sold or used as an independent product, it can be stored in a computer-readable storage medium. Based on this understanding, the technical solution of this application, in essence, or the part that contributes to the prior art, or all or part of the technical solution, can be embodied in the form of a software product. This computer software product is stored in a storage medium and includes several instructions to cause a computer device (which may be a personal computer, server, or network device, etc.) to execute all or part of the steps of the methods described in the various embodiments of this application. The aforementioned storage medium includes various media capable of storing program code, such as a USB flash drive, read-only memory (ROM), random access memory (RAM), portable hard drive, magnetic disk, or optical disk.

[0074] The above description is only a preferred embodiment of this application. It should be noted that for those skilled in the art, several improvements and modifications can be made without departing from the principle of this application, and these improvements and modifications should also be considered within the scope of protection of this application.

Claims

1. A thermal conductivity measurement system, characterized in that, include: The sample to be tested, a heating unit, an infrared imaging unit, and a data processing terminal are provided. The sample to be tested has a sealed cavity filled with liquid metal. The sample to be tested is connected to the heating unit, the heating unit is connected to the data processing terminal, and the data processing terminal is connected to the infrared imaging unit. The heating unit is used to heat the sample to be tested; The infrared imaging unit is used to acquire thermal morphology images of the sample to be tested and transmit the thermal morphology images to the data processing terminal. The data processing terminal is used to read the power data of the heating unit and determine the thermal conductivity of the sample under test based on the power data and the thermal morphology image.

2. The system according to claim 1, characterized in that, The heating unit includes: A heating element and a DC regulated power supply, wherein the heating element and the DC regulated power supply are connected; The DC regulated power supply is used to provide voltage to the heating element; The heating element is used to heat the sample to be tested until the temperature difference between the two measurement points in the sample reaches a steady state.

3. The system according to claim 2, characterized in that, The infrared imaging unit includes a mid-wave infrared thermal imager, wherein the optical axis of the mid-wave infrared thermal imager is aligned with the central region of the sample to be tested.

4. The system according to claim 1, characterized in that, The sample to be tested includes: Silicon-based adapter board.

5. The system according to claim 1, characterized in that, The data processing terminal is also used to obtain the distance between two measurement points in the sample under test, the output power of the DC regulated power supply when the temperature difference between the two measurement points in the sample under test reaches a steady state, and the cross-sectional area of ​​the sample under test. The data processing terminal is also used to obtain the temperature difference value between two measurement points of the sample under test when the temperature difference reaches a steady state from the thermal morphology image.

6. The system according to claim 1, characterized in that, The data processing terminal is also used to determine the thermal conductivity of the sample under test based on the distance between two measurement points in the sample under test, the output power of the DC regulated power supply when the temperature difference between the two measurement points in the sample under test reaches a steady state, the cross-sectional area of ​​the sample under test, and the temperature difference value when the temperature difference between the two measurement points in the sample under test reaches a steady state.

7. The system according to claim 2, characterized in that, The DC regulated power supply is also used to output different voltages to the heating element, wherein the different voltages are used to determine the thermal conductivity of the sample under different voltages.

8. A method for measuring thermal conductivity, characterized in that, include: Acquire multi-dimensional data of the sample to be tested, wherein the multi-dimensional data includes at least: power data of the DC regulated power supply in the thermal conductivity measurement system and thermal morphology image of the sample to be tested, wherein the sample to be tested has a sealed cavity inside, and the sealed cavity is filled with liquid metal. The thermal conductivity of the sample to be tested is determined based on the multidimensional data of the sample to be tested.

9. The method according to claim 8, characterized in that, The thermal conductivity of the sample to be tested is determined based on multi-dimensional data, including: The distance between two measurement points in the sample to be tested, the cross-sectional area of ​​the sample to be tested, the electrical data, and the thermal morphology image are obtained, wherein the electrical data includes the output power of the DC regulated power supply when the temperature difference between the two measurement points in the sample to be tested reaches a steady state. Extract the temperature difference value when the temperature difference between two measurement points in the sample under test reaches a steady state from the thermal morphology image; The thermal conductivity of the sample under test is determined based on the distance between the two measurement points, the output power of the DC regulated power supply when the temperature difference between the two measurement points in the sample under test reaches a steady state, the cross-sectional area of ​​the sample under test, and the temperature difference value when the temperature difference between the two measurement points in the sample under test reaches a steady state.

10. A method for embedding liquid metal within a silicon-based adapter board, characterized in that, include: Heating liquid metal to a target temperature, wherein the target temperature is higher than the melting point temperature of the liquid metal; The liquid metal at the target temperature is filled into the sealed cavity inside the base adapter plate until the filling rate of the liquid metal in the sealed cavity reaches a preset value. The potting opening of the base adapter plate is sealed using a low-temperature ceramic adhesive.

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