Light-emitting device, display device, photoelectric conversion device, electronic apparatus, illumination device, moving object, and wearable device

Abstract

The invention relates to a light emitting device, a display device, a photoelectric conversion device, an electronic apparatus, an illumination device, a moving object, and a wearable device. A light emitting device including a first pixel and a second pixel is provided. The first and second pixel lattices include a microlens and a light emitting element including a light emitting layer disposed between the main surface of the substrate and the microlens. A luminance distribution in a light emitting region of the light emitting layer of the first pixel and a luminance distribution in a light emitting region of the light emitting layer of the second pixel are different from each other. The microlenses are arranged at a position where, when light is incident toward the light-emitting layer while passing through the microlenses from a normal direction to the principal surface, an area of a region to which a light flux that has passed through the entire microlenses is incident becomes larger than an area of the light-emitting region.

Description

Technical Field

[0001] The embodiments relate to light-emitting devices, display devices, photoelectric conversion devices, electronic devices, lighting devices, mobile bodies, and wearable devices. Background Technology

[0002] Light-emitting devices that include light-emitting elements such as organic electroluminescent (EL) elements are known. Japanese Patent Application Publication No. 2022-080507 describes an electro-optic device that includes microlenses on the light-emitting element to improve light extraction efficiency.

[0003] If the brightness distribution in the light-emitting region of a light-emitting element varies among the light-emitting elements, then due to the variation in brightness distribution, the intensity of the light extracted by the microlens can vary among the light-emitting elements. Summary of the Invention

[0004] A light-emitting device is provided, comprising a first pixel and a second pixel, wherein each of the first pixel and the second pixel includes a microlens disposed above a main surface of a substrate and a light-emitting element disposed between the main surface and the microlens, the light-emitting element including a light-emitting layer, the brightness distribution in the light-emitting region of the light-emitting layer of the first pixel being different from the brightness distribution in the light-emitting region of the light-emitting layer of the second pixel, and in each of the first pixel and the second pixel, the microlens is disposed in a position such that, when light passes through the microlens in the normal direction of the main surface and is incident toward the light-emitting layer, the area of ​​the incident region to which the light beam that has passed through the entire microlens in a plane parallel to the main surface and including the upper surface of the light-emitting layer is incident becomes larger than the area of ​​the light-emitting region.

[0005] The features of this disclosure will become apparent from the following description of embodiments with reference to the accompanying drawings. The following description of the embodiments is given by way of example. Attached Figure Description

[0006] Figure 1 This is a cross-sectional view illustrating an example configuration of the light-emitting device according to an embodiment;

[0007] Figure 2 It is used to explain from Figure 1 A diagram showing the light emitted from the pixels of the light-emitting device.

[0008] Figure 3 It is used to explain the incident on Figure 1 A diagram showing the light emitted by the pixels of the light-emitting device;

[0009] Figure 4 It shows passing through Figure 1 A diagram illustrating an example of the optical path of the microlens in the light-emitting device shown;

[0010] Figure 5 It shows passing through Figure 1 A diagram illustrating an example of the optical path of the microlens in the light-emitting device shown;

[0011] Figure 6A and Figure 6B This is a diagram illustrating the light-emitting device used in the comparative example;

[0012] Figure 7A and Figure 7B It is used for explanation Figure 1 A diagram showing the effect of the light-emitting device;

[0013] Figure 8 It is used for explanation Figure 1 A graph showing the evaluation of the luminous intensity distribution of the light-emitting device;

[0014] Figure 9 It shows passing through Figure 1 A diagram illustrating an example of the optical path of the microlens in the light-emitting device shown;

[0015] Figure 10A and Figure 10B It is shown Figure 1 Orthogonal projection and cross-sectional view of a modified example of the light-emitting device shown;

[0016] Figure 11 It is shown Figure 1 A cross-sectional view of a modified example of the light-emitting device shown;

[0017] Figure 12A and Figure 12B This is a cross-sectional view illustrating an example configuration of the pixels of the light-emitting device according to an embodiment;

[0018] Figures 13A to 13C This is a diagram illustrating an example of an image forming apparatus using a light-emitting device according to an embodiment;

[0019] Figure 14 This is a diagram illustrating an example of a display device using a light-emitting device according to an embodiment;

[0020] Figure 15 This is a diagram illustrating an example of a photoelectric conversion device using a light-emitting device according to an embodiment;

[0021] Figure 16 This is a diagram illustrating an example of an electronic device using a light-emitting device according to an embodiment;

[0022] Figure 17A and Figure 17B Each figure shows an example of a display device using a light-emitting device according to an embodiment;

[0023] Figure 18This is a diagram illustrating an example of a lighting device using a light-emitting device according to an embodiment;

[0024] Figure 19A and Figure 19B This is a diagram illustrating an example of a moving body using a light-emitting device according to an embodiment; and

[0025] Figure 20A and Figure 20B These are figures illustrating examples of wearable devices using the light-emitting device according to embodiments. Detailed Implementation

[0026] In the following, embodiments will be described in detail with reference to the accompanying drawings. Note that the following embodiments are not intended to limit the scope of the claims. Several features are described in the embodiments, but not all such features are required, and several such features can be appropriately combined. Furthermore, in the drawings, the same reference numerals are given the same or similar configuration, and redundant descriptions thereof are omitted.

[0027] refer to Figures 1 to 11 The following describes a light-emitting device according to embodiments of the present disclosure. Figure 1 This is a cross-sectional view illustrating an example configuration of the light-emitting device 100 according to this embodiment. The light-emitting device 100 includes a plurality of pixels 110. Figure 1 Two pixels 110 are shown, but more pixels 110 can actually be arranged. For example, the pixels 110 can be arranged in a matrix. The pixels 110 are formed on the substrate 101.

[0028] Pixel 110 includes a microlens 107 disposed above the main surface 109 of substrate 101, and a light-emitting element 120 disposed between the main surface 109 of substrate 101 and the microlens 107. The light-emitting element 120 may include a lower electrode 102 disposed between the main surface 109 of substrate 101 and the microlens 107, an upper electrode 104 disposed between the lower electrode 102 and the microlens 107, and an organic compound layer 103 including a light-emitting layer 131 disposed between the lower electrode 102 and the upper electrode 104.

[0029] The light-emitting device 100 may further include a structure 108 disposed between the substrate 101 and the lower electrode 102. Wiring patterns for electrically connecting elements such as transistors disposed on the substrate 101 to the lower electrode 102 may be arranged in the structure 108. Figure 1 In the configuration shown, the lower electrodes 102 are segmented and arranged for each pixel 110 (light-emitting element 120), and the light-emitting device 100 also includes an insulating layer 105, which includes openings 132 for exposing a portion of each lower electrode 102 to the organic compound layer 103. Figure 1In the configuration shown, the upper electrode 104 is shared by multiple pixels 110 (light-emitting elements 120), and the light-emitting device 100 also includes a protective layer 106 disposed between the upper electrode 104 and the microlens 107.

[0030] The light-emitting layer 131 emits light based on the potential difference applied between the lower electrode 102 and the upper electrode 104. The lower electrode 102 and the organic compound layer 103 are in contact with each other through an opening 132 provided in the insulating layer 105. The portion of the light-emitting layer 131 arranged in the organic compound layer 103 corresponding to the opening 132 of the insulating layer 105 is the light-emitting region 130. It can also be considered that, in an orthogonal projection onto the main surface 109 of the substrate 101, the position of the opening 132 of the insulating layer 105 coincides with the position of the light-emitting region 130 in the light-emitting layer 131. In each pixel 110, the microlens 107 may have a curved surface portion corresponding to the light-emitting region 130 of the light-emitting element 120 and is provided on the protective layer 106.

[0031] The substrate 101 is not particularly limited, as long as it can support the components constituting the light-emitting device 100. For example, glass, plastic or silicon can be used as the material of the substrate 101. Switching elements such as transistors, wiring patterns and interlayer insulating films can be arranged in the substrate 101 and on the substrate 101 (in the structure 108).

[0032] The lower electrode 102 can be transparent or opaque to light emitted from the light-emitting layer 131. If the lower electrode 102 is a reflective layer (opaque), a material such as a metal with a reflectivity of 70% or greater at the emission wavelength of the light-emitting layer 131 can be used as the lower electrode 102. Here, the emission wavelength refers to the spectral range of light emitted from the light-emitting layer 131. For example, as the material of the lower electrode 102, metals such as aluminum or silver, or alloys of such metals with added silicon, copper, nickel, or neodymium, can be used. As long as the reflectivity of the lower electrode 102 is higher than a predetermined (desired) reflectivity, the lower electrode 102 can have a layered structure with a blocking electrode, which, in addition to the materials described above, uses metals such as titanium, tungsten, molybdenum, or gold, or their alloys. Alternatively, for example, the lower electrode 102 can have a layered structure with a transparent conductive oxide such as ITO, IZO, AZO, or IGZO.

[0033] On the other hand, if the lower electrode 102 is not used as a reflective layer, a transparent conductive oxide can be used as the material for the lower electrode 102. Examples of transparent conductive oxides are ITO, IZO, AZO, or IGZO. If the lower electrode 102 is transparent, a reflective layer can be provided below the lower electrode 102 (on the substrate 101 side). To obtain a predetermined optical distance, an insulating film can be provided between the transparent lower electrode 102 and the reflective layer. The film thickness of the transparent lower electrode 102 or the film thickness of the insulating film disposed between the lower electrode 102 and the reflective layer can be set according to the color emitted by each pixel 110 (light-emitting element 120).

[0034] The upper electrode 104 is semi-transparent. The material of the upper electrode 104 can be a semi-transparent material that transmits a portion of the light reaching the surface of the upper electrode 104 and reflects the remainder (i.e., semi-transparent reflection property). For example, a transparent material such as the aforementioned transparent conductive oxide can be used as the material of the upper electrode 104. Semi-transparent materials such as aluminum, silver, gold, alkali metals (lithium or cesium, etc.), alkaline earth metals (magnesium, calcium, or barium, etc.), or alloys containing these metals can also be used as the material of the upper electrode 104.

[0035] If a semi-transparent material is used as the material for the upper electrode 104, an alloy containing magnesium or silver as the main component can be used. As long as the upper electrode 104 has appropriate transmittance, it can have a layered structure comprising multiple layers made of the aforementioned materials. Figure 1 In the configuration shown, one upper electrode 104 is shared by multiple light-emitting elements 120, but multiple upper electrodes 104 corresponding to each of the multiple light-emitting elements 120 can be provided.

[0036] One of the lower electrode 102 and the upper electrode 104 functions as an anode, and the other electrode functions as a cathode. For example, the lower electrode 102 can function as an anode, and the upper electrode 104 can function as a cathode. Alternatively, the lower electrode 102 can function as a cathode, and the upper electrode 104 can function as an anode.

[0037] Each of the lower electrode 102, the upper electrode 104, and the organic compound layer 103 can be formed using known techniques such as sputtering, deposition, or spin coating. Each of the lower electrode 102 and the upper electrode 104 can be formed from multiple layers. In addition to the light-emitting layer 131, the organic compound layer 103 may also include at least one of a hole injection layer, a hole transport layer, an electron blocking layer, an electron transport layer, and an electron injection layer.

[0038] When holes injected from the anode and electrons injected from the cathode recombine in the light-emitting layer 131, light is emitted. The light-emitting layer 131 can be formed of a single layer or multiple layers. When light-emitting layers made of red luminescent material, green luminescent material, and blue luminescent material are combined, the light beams (red, green, and blue light) from each light-emitting layer can be mixed to obtain white light. Two types of light-emitting layers with complementary color relationships can be combined (e.g., a light-emitting layer made of blue luminescent material and a light-emitting layer made of yellow luminescent material). The materials contained in the light-emitting layer 131 and the configuration of the light-emitting layer 131 can be different for each pixel 110 (light-emitting element 120), so that the light-emitting layer 131 emits different colors of light for each pixel 110 (light-emitting element 120). In this case, the light-emitting layer 131 can be patterned for each pixel 110 (light-emitting element 120).

[0039] The light-emitting device 100 according to this embodiment may include a first reflective surface, a second reflective surface, and a light-emitting layer 131 disposed between the first reflective surface and the second reflective surface. The first reflective surface may be a lower electrode 102, a reflective layer disposed between a substrate 101 and a transparent lower electrode 102, or a reflective layer disposed between the lower electrode 102 and the light-emitting layer 131. The second reflective surface may be an upper electrode 104 or a semi-transparent reflective layer disposed between the upper electrode 104 and a microlens.

[0040] The protective layer 106 may be a dielectric layer, which is a semi-transparent inorganic material with low permeability to oxygen and water from the outside of the light-emitting device 100 to the light-emitting element 120. For example, the protective layer 106 may be formed using an inorganic material such as silicon oxide-based materials such as silicon nitride, silicon oxynitride, or silicon oxide. Alternatively, the protective layer 106 may be formed using an inorganic material such as aluminum oxide or titanium oxide. Regarding protective performance, inorganic materials such as silicon nitride, silicon oxynitride, or aluminum oxide may be used. The protective layer 106 may be formed using methods such as chemical vapor deposition (CVD), atomic layer deposition (ALD), or sputtering.

[0041] The protective layer 106 can have a single-layer structure or a layered structure combining the aforementioned materials and forming methods, provided that the protective layer 106 has sufficient moisture resistance. For example, the protective layer 106 can have a layered structure consisting of a silicon nitride layer formed using a CVD method and a layer of other materials with high density formed using an ALD method. Furthermore, the protective layer 106 can include an organic layer such as a resin, provided that it has suitable moisture resistance. For example, polyacrylate, polyamide, polyester, or epoxy resin can be used for the protective layer 106. Furthermore, in Figure 1In the configuration shown, one protective layer 106 is shared by multiple light-emitting elements 120, but multiple protective layers 106 corresponding to each of the multiple light-emitting elements 120 can be provided.

[0042] The microlens 107 can be formed using exposure and development processes. More specifically, a material film (photoresist film) is used to form the microlens 107, and the photoresist film is exposed and developed using a mask that includes continuous grayscale variations. A gray mask can be used as the mask. Alternatively, a regional grayscale mask can be used, which allows for illumination with continuous grayscale variations on the imaging surface by changing the density distribution of dots on a light-shielding film with a resolution equal to or lower than the resolution of the exposure device.

[0043] The lens shape can be adjusted by etching back the microlens 107 formed using exposure and development processes. In one embodiment, the microlens 107 only needs to have a curved surface with refractive power that converges light from the light-emitting region 130. The curved surface can be a portion of a sphere or an aspherical surface. More specifically, in cases where, as in this embodiment, the curved portion of the microlens 107 protrudes toward the light extraction side and light is extracted from a layer such as air (e.g., an air layer) with a refractive index lower than that of the microlens 107, the curved portion only needs to be an upwardly convex surface.

[0044] exist Figure 1 In the example shown, the layer contacting the microlens 107 on the light extraction side is air. However, the refractive index n0 of the layer only needs to be lower than the refractive index n1 of the microlens 107. For example, a transparent resin can be disposed on the microlens 107.

[0045] exist Figure 1 In the illustrated configuration, the microlens 107 is directly disposed on the protective layer 106. However, this configuration is not limited to this, and a planarization layer can be disposed between the protective layer 106 and the microlens 107 to planarize the unevenness of the upper surface of the protective layer 106. To improve color purity or viewing angle characteristics, a color filter or light absorption layer can be disposed. The color filter or light absorption layer can be disposed between the protective layer 106 and the microlens 107, or it can be disposed on the microlens 107. Alternatively, for example, the color filter and the protective layer 106 can be integrated, or the microlens 107 and the color filter can be integrated. Furthermore, for example, the color filter can be formed on a substrate different from the substrate 101, and the substrates can be bonded such that the color filter faces the protective layer 106. Alternatively, the protective layer 106 and the microlens 107 can be integrally formed. When the protective layer 106 and the microlens 107 are integrally formed, the curved portion of the microlens 107 can be formed with precise alignment with the light-emitting region 130. In addition, the distance between the microlens 107 and the light-emitting area 130 can be made smaller, thereby improving the viewing angle characteristics.

[0046] As described above, pixel 110 includes a light-emitting element 120 and a microlens 107, and the light-emitting element 120 includes a light-emitting layer 131 (light-emitting region 130) disposed between the main surface 109 of substrate 101 and microlens 107. Microlens 107 has a curved portion protruding in a direction away from the main surface 109 of substrate 101 (that is, the light-emitting side). Light-emitting region 130 is the upper surface portion of light-emitting layer 131 corresponding to the upper portion of opening 132 of insulating layer 105. Hereinafter, the direction perpendicular to the main surface 109 of substrate 101 is described as the "normal direction", and the direction parallel to the substrate is described as the "horizontal direction".

[0047] Here, when the normal direction relative to the main surface 109 of the substrate 101 is defined as 0°, the light ray in the opposite direction to the light ray emitted from the light-emitting region 130 through the microlens 107 at an arbitrary angle is called the "incident light". The light path of the incident light follows the emitted light in the opposite direction. When light parallel to the normal direction of the main surface 109 of the substrate 101 passes through the microlens 107 and is incident towards the light-emitting layer 131, the light beam that has passed through the entire microlens 107 is converged due to the refractive power of the microlens 107. The area in the plane including the upper surface of the light-emitting layer 131 (light-emitting region 130) where this light beam is incident is called the "incident region" 133. (Refer to...) Figure 2 and Figure 3 Describe the incident light and the incident region 133.

[0048] Figure 2 A cross-sectional view is shown of the vertex of the curved portion perpendicular to the main surface 109 of the substrate 101 and passing through the microlens 107. Figure 2 The following state is shown: among the light rays emitted from the light-emitting region 130, passing through the microlens 107, and extracted in a direction perpendicular to the normal direction of the main surface 109 of the substrate 101, the light rays extracted from the end of the light-emitting region 130 are emitted in the normal direction. Figure 2 The directions of the light shown are opposite. Figure 3 Showing tracking from in the opposite direction Figure 2 The light emitted from the luminous region 130 shown is the incident light. Figure 3 Only the incident light passing through the end of microlens 107 is shown. However, as described above, the incident region 133 is the region where a beam of light passing through the entire microlens 107 in the normal direction is incident on the plane including the upper surface of the light-emitting layer 131 (light-emitting region 130). For the sake of simplicity, Figure 2 and Figure 3 Only the light-emitting area 130 and the microlens 107 are shown. This also applies to... Figure 4 See Figure 7.

[0049] Next, refer to Figure 4 and Figure 5 This will describe the relationship between the emitting region 130 and the incident region 133. Figure 4 The following situation is illustrated: in the plan view, the entire outer edge of the incident region 133 is inside the outer edge of the light-emitting region 130, and the area of ​​the incident region 133 is smaller than the area of ​​the light-emitting region 130. Incident light passing through the end of the microlens 107 is incident on the inner side of the end of the light-emitting region 130 in a plane including the upper surface of the light-emitting layer 131 (light-emitting region 130). Therefore, light exiting from the end of the light-emitting region 130 and passing through the microlens 107 at the end closest to the end of the light-emitting region 130 is refracted due to the refractive power of the microlens 107 and exits in a converging direction.

[0050] on the other hand, Figure 5 The following situation is illustrated: in the planar view, the outer edge of the light-emitting region 130 is inside the outer edge of the incident region 133, and the area of ​​the incident region 133 is larger than the area of ​​the light-emitting region 130. Here, when light passes through the microlens 107 from the normal direction of the main surface 109 of the substrate 101 and is incident towards the light-emitting layer 131, the area of ​​the incident region 133, in which the light beam that has passed through the entire microlens 107 is incident, is defined as S1. The area of ​​the light-emitting region 130 is defined as S2. In this case, in each pixel 110, the microlens 107 is arranged at a position where the area S1 of the incident region 133 is larger than the area S2 of the light-emitting region 130. Here, the incident region 133 indicates the region in which light is incident on the plane including the upper surface of the light-emitting layer 131 and parallel to the plane of the main surface 109 of the substrate 101. Therefore, the incident light passing through the end of the microlens 107 is incident on the outer side of the end of the light-emitting region 130 in the plane including the upper surface of the light-emitting layer 131 (light-emitting region 130). Therefore, light emanating from the end of the light-emitting region 130 and passing through the microlens 107 at the end closest to the end of the light-emitting region 130 is refracted by the refractive power of the microlens 107 and emitted as diverging light. The diverging light is light as follows: Figure 5 As shown, after exiting the microlens 107, the light does not converge on the microlens 107 and travels outward toward the region obtained by projecting the microlens 107 in the normal direction of the main surface 109 of the substrate 101.

[0051] Next, refer to Figure 9The area of ​​the incident region 133 and the area of ​​the light-emitting region 130 will be described in detail. The upper surface of the microlens 107 has a convex surface 201 in a direction away from the main surface 109 of the substrate 101. The vertex 202 of the surface 201 is the part of the surface 201 that is farthest from the main surface 109 of the substrate 101 in forming the upper surface of the microlens 107. The ends 203 of the surface 201 can be the set of points on the surface 201 with the largest tilt angle θ. For example, even if the surface 201 extends from the end 203 in the right direction at an angle smaller than the tilt angle θ at the end 203, this is not considered an effective lens surface of the light-emitting element 120. This is because the lens surface does not provide an ideal lens focusing effect. Figure 9 The cross section of the surface 202 of the curved surface 201 that forms the upper surface of the microlens 107 is shown in the normal direction of the main surface 109 of the substrate 101.

[0052] like Figure 9 As shown, the height difference between vertex 202 and end 203 in the normal direction of the main surface 109 of substrate 101 is defined as h [μm] (hereinafter sometimes referred to as "distance h"). The distance between vertex 202 and end 203 in the orthogonal projection of the main surface of substrate 101 is defined as r [μm] (hereinafter sometimes referred to as "distance r"). The height difference between end 203 and light-emitting region 130 in the normal direction of the main surface 109 of substrate 101 is defined as H [μm] (hereinafter sometimes referred to as "distance H"). The distance from the center of light-emitting region 130 to the end of light-emitting region 130 is defined as a [μm] (hereinafter sometimes referred to as "distance a").

[0053] At the end 203 of surface 201, the tilt angle θ of microlens 107 is maximum on surface 201. If surface 201 is a sphere, then distances h and r are used via sinθ = 2rh / (r 2 +h 2 The tilt angle θ at end 203 is given by considering the light ray refracted at a point on surface 201 with a tilt angle θ and extracted in the normal direction of the main surface 109 of substrate 101. Using the refractive index n0 of the layer on the light extraction side of surface 201 and the refractive index n1 of the layer on the light emission region 130 side of surface 201 (microlens 107 in this configuration example), the incident angle α toward surface 201 is given by n1·sinα=n0·sinθ according to Snell's law. The angle β1 of this light ray relative to the normal direction inside the layer on the light emission region 130 side of surface 201 (microlens 107 in this configuration example) is given by β1=|θ-α|.

[0054] When the distance traveled by a ray (extracted in the normal direction) from the light-emitting region 130 at an angle β towards the end 203 of the curved surface 201 in the horizontal direction of the main surface 109 of the substrate 101 is defined as L, the area of ​​the incident region 133 is π(rL). 2 Given, and the area of ​​the luminescent region 130 is given by πa 2 Provided.

[0055] Considering the refraction at the interfaces of the layers disposed between the light-emitting region 130 and the microlens 107, the distance L is given by calculating the angle of light rays in each layer of the protective layer 106. More specifically, in the N layers (including the microlens 107) where the protective layer 106 is disposed... Figure 9 In the example shown (three layers), it is assumed that microlens 107 is the first layer, and the i-th layer in the stacking order from the first layer has a refractive index n. i Then the light angle βi in the i-th layer is given by the following:

[0056] n i ·sinβi = n1·sinβ1...(1)

[0057] Using the ray angle βi in each layer, the distance Li that the ray travels in each layer in the direction parallel to the main surface of the substrate is given by Li=H. i ·tanβi is given. As shown in the following equation (2), the distance L is given by summing the distances Li in each layer from i=1 to i=N. Here, H i It is the height of the i-th layer in the normal direction of the main surface 109 of the substrate 101. That is, if there are N layers, then H = H1 + H2 + H3 + ... + H N .

[0058] L = H1·tanβ1 + H2·tanβ2 + ... + H N ·tanβ N ...(2)

[0059] As can be understood from the above, if the area of ​​the incident region 133 is larger than the area of ​​the emitting region 130, then πa 2 <π(rL) 2 Established.

[0060] The refractive index of the material forming each of the above layers can be evaluated, for example, by measuring a sample of the material deposited on a Si wafer using a measurement method such as spectral ellipsometry. The refractive index can be, for example, the refractive index measured at a wavelength of 500 nm.

[0061] In this embodiment, in the pixels 110 arranged in the light-emitting device 100, the area of ​​the incident region 133 is larger than the area of ​​the light-emitting region 130. Using this configuration, a light-emitting device 100 with high display quality can be provided by suppressing variations in the light emission intensity in the front direction (the normal direction of the main surface 109 of the substrate 101) of the pixels 110. The reasons for this will be described below.

[0062] Figure 6A and Figure 6B This illustrates a comparative configuration in which the area of ​​the incident region 133 in pixel 110 is smaller than the area of ​​the light-emitting region 130. Figure 6A and Figure 6B The configurations of different pixels 110a and 110b are shown respectively. Figure 6A and Figure 6B The upper side shows the cross-sections of pixels 110a and 110b, and the lower side shows the cross-sectional profile of the brightness of the light-emitting element 120 (light-emitting area 130) before reaching the microlens 107. It can be seen that, as... Figure 6A and Figure 6B As shown, the brightness distribution in the light-emitting region 130 of the light-emitting layer 131 of pixel 110a is different from the brightness distribution in the light-emitting region 130 of the light-emitting layer 131 of pixel 110b.

[0063] Consider the following situation: the light-emitting device 100 is current-driven, that is, a specified amount of current flows through the light-emitting element 120, and the same amount of current flows through the light-emitting element 120. Therefore, although the brightness distribution is different between pixels 110a and 110b, it is assumed that the total amount of light emitted from the light-emitting region 130 is approximately the same between the two.

[0064] like Figure 6A and Figure 6B As shown, the area of ​​the incident region 133 is smaller than the area of ​​the emitting region 130. In this case, as... Figure 6A As shown in pixel 110a, if the incident area 133 corresponds to a low-brightness portion, light from the low-brightness portion is extracted in the front direction (normal direction of the main surface 109 of the substrate 101) of the light-emitting device 100 via the microlens 107. Therefore, the light emission intensity in the front direction after transmission through the microlens 107 is low. On the other hand, as... Figure 6BAs shown in pixel 110b, if the incident area 133 corresponds to a high-brightness portion, light from the high-brightness portion is extracted in the frontal direction of the light-emitting device 100 via the microlens 107. Therefore, the light emission intensity in the frontal direction after transmission through the microlens 107 is high. In other words, even if the same amount of current flows through the light-emitting elements 120 of pixels 110a and 110b to achieve uniform display, the amount of light extracted in the frontal direction varies depending on pixel 110, resulting in a non-uniform display.

[0065] Figure 7A and Figure 7B This illustrates a configuration according to this embodiment where the area of ​​the incident region 133 in pixel 110 is larger than the area of ​​the light-emitting region 130. For example... Figure 6A and Figure 6B As shown, the brightness distribution in the light-emitting region 130 of the light-emitting layer 131 of pixel 110a is different from the brightness distribution in the light-emitting region 130 of the light-emitting layer 131 of pixel 110b. As in the example above, consider the case where the same amount of current flows through the light-emitting element 120.

[0066] like Figure 7A and Figure 7B As shown, the area of ​​the incident region 133 is larger than the area of ​​the light-emitting region 130. In this case, even if the brightness distribution in the light-emitting region 130 differs between pixels 110a and 110b, light emitted from a large area of ​​the light-emitting region 130 can be extracted in the front direction of the light-emitting device 100 (the normal direction of the main surface 109 of the substrate 101). Figure 5 As shown, the entire outer edge of the light-emitting region 130 can be arranged inside the outer edge of the incident region 133. Therefore, light can be extracted from the entire light-emitting region 130 in the frontal direction via the microlens 107. Consequently, if the same amount of current flows through the light-emitting elements 120 of pixels 110a and 110b, the luminous intensity in the frontal direction after transmission through the microlens 107 tends to be approximately the same between pixels 110. This allows for a highly uniform display in the light-emitting device 100. As a result, the display quality of the light-emitting device 100 can be improved.

[0067] It can also be considered that, Figure 5 , Figure 7A and Figure 7B In the configuration shown according to this embodiment, pixel 110 is configured such that light emitted from the end of the light-emitting region 130 and passing through the end of the microlens 107 closest to the end of the light-emitting region 130 is emitted as diverging light due to the refractive power of the microlens 107. In this case, in an orthogonal projection onto the main surface 109 of the substrate 101, the entire outer edge of the light-emitting region 130 can be arranged inside the outer edge of the microlens 107.

[0068] Here, we will refer to Figure 8 A method for evaluating the brightness distribution in the luminous region 130 is described. For example... Figure 8 As shown, from Figure 1 The illustrated light-emitting device 100 removes the microlens 107, allowing the same amount of current to flow through each light-emitting element 120 to emit light, and an image is taken from above using a microscope. In this case, the microscope magnification is set so that the light emission distribution of each light-emitting element 120 can be seen. For example, an objective lens with approximately 150x magnification can be used to take the image. Using such an evaluation system, the correlation between the grayscale and brightness of the captured image is calculated for the grayscale of the image obtained while changing the brightness of the light-emitting elements 120 whose brightness is known. The brightness distribution before reaching the microlens can be calculated based on the grayscale of the image. Alternatively, an evaluation device such as an image colorimeter, which integrates the objective lens and luminance meter, can be used to evaluate the brightness distribution.

[0069] Here, the different brightness distribution among pixels 110 can be as follows: as described above. Figure 7A and Figure 7B As shown with pixels 110a and 110b, the highest or lowest brightness positions in the light-emitting region 130 differ among these pixels. For example, when multiple pixels 110 are arranged in a matrix, a coordinate system is defined. The X direction (e.g., row direction, etc.) and the Y direction (e.g., column direction, etc.) intersecting (orthogonal) with the X direction can be appropriately determined. In the following description, it will be assumed that the brightness distribution between pixels 110a and 110b among the multiple pixels 110 is different. Pixels 110a and 110b may be the closest pixels among the multiple pixels 110 that emit light of the same color. Thus, a highly uniform display can be achieved in a continuous (nearby) area. However, this disclosure is not limited to this. For example, pixels 110a and 110b may be pixels that are adjacent to each other among the multiple pixels 110, or one or more pixels 110 may be arranged between pixels 110a and 110b.

[0070] For example, a coordinate system is defined where the direction to be compared from pixel 110a to pixel 110b is the X direction, the direction intersecting the X direction is the Y direction, and the geometric centroid of the light-emitting region 130 in the orthogonal projection of each pixel in pixels 110a and 110b onto the main surface 109 of the substrate 101 is the origin (0, 0). If the coordinate position of the maximum brightness position in the light-emitting region 130 of pixel 110a is different from the coordinate position of the maximum brightness position in the light-emitting region 130 of pixel 110b, it can be determined that the brightness distribution in the light-emitting region 130 of pixel 110a is different from the brightness distribution in the light-emitting region 130 of pixel 110b. For example, the brightness distribution in the light-emitting region 130 of pixel 110a may differ from the brightness distribution in the light-emitting region 130 of pixel 110b (hereinafter sometimes referred to as a difference in brightness distribution between pixels 110a and 110b) as follows: in this coordinate system, the location of maximum brightness in the light-emitting region 130 of pixel 110a is 0.2 μm or greater than the location of maximum brightness in the light-emitting region 130 of pixel 110b. Furthermore, the difference in brightness distribution between pixels 110a and 110b may occur as follows: in this coordinate system, the location of maximum brightness in the light-emitting region 130 of pixel 110a is 0.5 μm or greater than the location of maximum brightness in the light-emitting region 130 of pixel 110b. Alternatively, for example, the difference in brightness distribution between pixels 110a and 110b can occur when the brightness at the geometric centroid of the light-emitting region 130 of pixel 110a in the orthogonal projection of the main surface 109 of substrate 101 differs from the brightness at the geometric centroid of the light-emitting region 130 of pixel 110b in the orthogonal projection of the main surface 109 of substrate 101. For example, considering significant differences in measurement accuracy, if the brightness at the geometric centroid differs by 2% or more, it can be determined that the brightness distribution between pixels 110a and 110b is different. Alternatively, for example, if the brightness at the geometric centroid differs by 5% or more, it can be determined that the brightness distribution between pixels 110a and 110b is different. Furthermore, for example, if the brightness at the geometric centroid differs by 10% or more, it can be determined that the brightness distribution between pixels 110a and 110b is different. Alternatively, for example, if the brightness at the geometric centroid location differs by 20% or more, it can be determined that the brightness distribution is different between pixel 110a and pixel 110b.

[0071] When the light-emitting device 100 is manufactured cheaply using a relatively crude process, the brightness distribution in the light-emitting region 130 between the pixels 110 (light-emitting elements 120) can vary greatly. On the other hand, even when the brightness distribution varies greatly as described above, the effects of this disclosure can be fully enjoyed, and the degradation of the display quality of the light-emitting device 100 is suppressed. That is, for example, by reducing the burden of process management, the light-emitting device 100 according to this embodiment can be manufactured at a suppressed cost.

[0072] Alternatively, for example, the lower electrode 102 can be formed by including a conductive layer and an oxide layer covering the conductive layer. That is, the lower electrode 102 can be formed by multiple layers. The oxide layer can be the uppermost layer of the contact organic compound layer 103 disposed in the lower electrode 102. If the uppermost layer of the lower electrode 102 is an oxide layer, then when manufacturing the light-emitting device 100, there is less concern about the oxidation progress of the conductive layer of the lower electrode 102 in the process after the formation of the lower electrode 102. Therefore, for example, a process of exposing the lower electrode 102 to the atmosphere can be used with the opening 132 formed in the insulating layer 105 to expose the lower electrode 102. In other words, a process of exposing the lower electrode 102 to the atmosphere can be used while using a conductive layer with high conductivity to reduce the resistance of the lower electrode 102. Thus, it is not necessary to manufacture the light-emitting device 100 in a vacuum in-situ process from the formation of the opening 132 in the insulating layer 105 until the formation of the organic compound layer 103. In other words, the light-emitting device 100 can be manufactured at low cost using a relatively simple process. If the uppermost layer of the lower electrode 102 is an oxide layer, the degree of oxidation tends to vary on the surface of the lower electrode 102 depending on the process used. Therefore, when charge is injected from the lower electrode 102 into the organic compound layer 103, resistance distribution is likely to occur. As a result, the brightness distribution in the light-emitting region 130 may vary for each pixel 110. In addition, since the in-plane distribution of the thickness of the oxide layer with low conductivity affects the resistivity distribution of the lower electrode 102, the brightness distribution in the light-emitting region 130 may vary for each pixel 110. This configuration can fully take advantage of the effects of this disclosure.

[0073] The lower electrode 102 may have a layer configuration such that, for example, a titanium-containing barrier layer is disposed on and in contact with the aluminum-containing layer. Aluminum has high light reflectivity, which is advantageous for improving the luminous efficiency of the light-emitting element 120. However, when using processes involving exposure to the atmosphere, an insulating native oxide film is formed on the surface, and the resistance increases. To avoid this, a titanium-containing barrier layer is formed in the uppermost layer. The oxide layer formed on the surface of titanium has a work function that is advantageous for hole injection into the organic layer, and is therefore advantageous for reducing resistance. It can also be considered that the lower electrode 102 includes a conductive layer and an oxide layer covering the conductive layer, and includes a layer using aluminum or the like and constituting part of the conductive layer, and a layer containing titanium and constituting the remaining part of the conductive layer and the oxide layer. Since titanium has a lower light reflectivity than aluminum, titanium can be used in thin film form. In this case, the film thickness distribution of the barrier layer is likely to occur on the surface of the lower electrode 102. Since the proportion of aluminum diffused into the barrier layer and present on its surface varies with the film thickness, the proportion of aluminum oxide, which has a work function unfavorable for hole injection into the organic layer, tends to be distributed on the surface of the lower electrode 102. Therefore, the brightness distribution in the light-emitting region 130 easily varies for each pixel 110. Thus, even with this configuration, the effects of this disclosure can be fully enjoyed. The film thickness of the thinned titanium-containing barrier layer can, for example, be 15 nm or less. Furthermore, for example, the film thickness of the titanium-containing barrier layer can be 10 nm or less. This allows for the achievement of both requirements for light reflectivity and charge injection characteristics.

[0074] The conductive layer of the lower electrode 102 can be a layer with grain boundaries. For example, aluminum or silver, used as the conductive layer of the lower electrode 102, can be composed of multiple grains. Since the in-plane charge injection characteristics of the lower electrode 102 can change between within the grain and at the grain boundaries, the brightness distribution in the light-emitting region 130 may vary for each pixel 110. However, as described above, in the light-emitting device 100 according to this embodiment, even if the brightness distribution in the light-emitting region 130 varies for each pixel 110, the degradation of display quality is suppressed. That is, even with this configuration, the effects of this disclosure can be fully enjoyed.

[0075] like Figure 7A As shown, in an orthographic projection onto the main surface 109 of the substrate 101, the light-emitting region 130 of pixel 110a can have multiple brightness peak positions. In this case, the brightness distribution tends to be different compared to a pixel like pixel 110b with a single brightness peak position or a pixel 110 with a relatively uniform brightness distribution. However, even when pixels 110 with multiple brightness peak positions are arranged in the light-emitting region 130, the effects of this disclosure can be fully enjoyed.

[0076] As described above, when using a relatively low-cost process with simple process management, unevenness may occur on the surface of the lower electrode 102 facing the light-emitting layer 131. For example, it is conceivable that, with the main surface 109 of the substrate 101 as a reference, the surface of the lower electrode 102 has a height difference (peak-to-valley ratio (PV) value) of 10 nm or greater, or even 15 nm or greater. In this case, the film thickness of the organic compound layer 103 can vary depending on the unevenness of the surface of the lower electrode 102, and a brightness distribution may occur. Furthermore, in the case of unevenness on the surface of the lower electrode 102, or due to the process of forming the lower electrode 102, the lower electrode 102 may have an in-plane distribution of reflectivity for light emitted from the light-emitting region 130. Similarly, in this case, the brightness distribution in the light-emitting region 130 can vary for each pixel 110. Even with these configurations, the effects of this disclosure can be fully enjoyed.

[0077] An example of a method for manufacturing a light-emitting device 100 will be described below. In this example, the light-emitting device 100 includes three types of light-emitting elements 120, namely a red light-emitting element with a red light-emitting layer, a green light-emitting element with a green light-emitting layer, and a blue light-emitting element with a blue light-emitting layer.

[0078] First, a structure 108 is formed on a substrate 101. The structure 108 can be formed by forming, for example, one or more wiring patterns in a dielectric. After forming the structure 108, an aluminum film is formed on the structure 108, and a plurality of lower electrodes 102 are formed by patterning the aluminum film. Then, an insulating layer 105 is formed to cover each of the plurality of lower electrodes 102. As the insulating layer 105, for example, silicon oxide with a film thickness of 65 nm can be used. After forming the insulating layer 105, an opening 132 is provided to expose the lower electrodes 102. The shape of the opening 132 can be, for example, a circular shape with a radius of 0.9 μm. As described above, the opening 132 of the insulating layer 105 exposes the lower electrodes 102 to the organic compound layer 103 formed on the lower electrodes 102. In an orthogonal projection onto the main surface 109 of the substrate 101, the size and shape of the opening 132 can correspond to the size and shape of the light-emitting region 130 of the light-emitting layer 131.

[0079] Next, an organic compound layer 103 is formed on the lower electrode 102 (and the insulating layer 105). More specifically, first, a hole injection layer, a hole transport layer, and an electron blocking layer are formed sequentially. At this time, the hole injection layer and the hole transport layer can be deposited, for example, to cover the lower electrode 102 corresponding to all the light-emitting elements 120. The electron blocking layer can be deposited three times, for example, using a micromask, to be formed individually for each of the lower electrodes 102 corresponding to each light-emitting element 120 of each emission color. For the purpose of optimizing the aforementioned optical distance, the film thickness of the electron blocking layer can be adjusted for each emission color. Next, for example, a red emission layer, a green emission layer, and a blue emission layer are formed by three depositions using a micromask, so that an emission layer 131 is formed individually for each emission color. After forming each emission layer 131, a hole blocking layer and an electron transport layer are formed sequentially. Similar to the electron blocking layer, the hole blocking layer can be formed by adjusting the film thickness of the hole blocking layer for each emission color. Subsequently, an electron injection layer is formed using lithium fluoride.

[0080] After forming the electron injection layer, a magnesium / silver alloy with a thickness of 10 nm is formed on the organic compound layer 103 as the upper electrode 104. The ratio of magnesium to silver can be, for example, 1:1. Subsequently, as a protective layer 106, a silicon nitride layer with a refractive index of 1.97 and a thickness of 2.1 μm is formed on the upper electrode 104 using a CVD method.

[0081] After forming the protective layer 106, a microlens 107 with a refractive index of 1.53 is formed on the protective layer 106 using an exposure and development process. The curved surface 201 of the microlens 107 is part of a sphere. For example, the distance h in the normal direction of the main surface 109 of the substrate 101 from the vertex 202 of the curved surface 201 to the end 203 of the curved surface 201 can be 1.4 μm, and the horizontal distance r can be 1.9 μm. The portion above the microlens 107 is air with a refractive index of 1. In this case, by considering the height of the microlens 107 with a high interference level of the light-emitting element 120 from the surface of the protective layer 106, the difference in viewing angle characteristics between pixels with different interference levels can be reduced.

[0082] The light-emitting device 100 can be manufactured using the steps described above. Furthermore, as described above, even if brightness distribution occurs in the light-emitting region 130 of the light-emitting element 120 due to the use of processes with simple process management in each step, and therefore results in variations in brightness distribution among the pixels 110, the degradation of the display quality of the light-emitting device 100 is suppressed. In other words, a light-emitting device 100 with improved quality can be provided at low cost.

[0083] The following configuration will be described here: as described above, a transparent material is used for the lower electrode 102, a reflective layer is provided below the lower electrode 102 (on the substrate 101 side), and an insulating film is provided between the lower electrode 102 and the reflective layer to obtain a predetermined optical distance. Figure 10A It is an orthogonal projection of the light-emitting device 100 when viewed from above in the direction of the normal. Figure 10B It is along Figure 10A The cross-sectional view shown is intercepted by line X-X'. Figure 10B In the configuration shown, the planarization layer 115 is arranged between the protective layer 106 and the microlens 107.

[0084] exist Figure 10B In the illustrated configuration, the light-emitting element 120 includes a reflective layer 112 disposed between the lower electrode 102 and a structure 108 disposed on the main surface 109 of the substrate 101. The light-emitting element 120 also includes an insulating layer 111 disposed between the lower electrode 102 and the reflective layer 112, which functions as an optical adjustment layer for obtaining a predetermined optical distance. The lower electrode 102 and the reflective layer 112 are electrically connected via a conductive via 114 disposed in the insulating layer 111. The reflective layer 112, disposed in the light-emitting element 120, is insulated by an insulating layer 113. The lower electrode 102 and the reflective layer 112 are electrically connected via the conductive via 114. Alternatively, the light-emitting element 120 may be considered to include a conductive via 114 electrically connecting the lower electrode 102 and the reflective layer 112. In addition, the light-emitting element 120 includes an insulating layer 151 disposed between the organic compound layer 103 (light-emitting layer 131) and the lower electrode 102, and disposed at a position overlapping the conductive via 114 in an orthogonal projection of the main surface 109 of the substrate 101. Figure 10A The dashed lines c indicate the midpoints in the insulating layer 105 between the openings 132 of adjacent light-emitting elements 120. Figure 10A and Figure 10B The configuration shown illustrates an example of adjacent pixels 110 emitting light of the same color, but the light-emitting device 100 is not limited to this configuration. For example, the film thickness of the insulating layer 111 can vary depending on the color emitted from the pixels 110. This allows the optical interference distance to be adjusted according to the emitted color, thereby achieving high luminous efficiency.

[0085] The material for the reflective layer 112 can be a metal such as aluminum or silver, or an alloy of such metal with added silicon, copper, nickel, or neodymium. The material for the conductive via 114 can be selected from cobalt, molybdenum, platinum, tantalum, titanium, titanium nitride, and tungsten. The conductive via 114 can be an alloy or compound. For example, a material containing titanium or titanium nitride as the main component can be used for the conductive via 114. The conductive via 114 can contain titanium nitride as the main component. A conductive layer made of titanium or titanium nitride can be provided at the interface between the reflective layer 112 and the insulating layer 111 on the substrate 101 side. The conductive layer disposed at the interface between the reflective layer 112 and the insulating layer 111 can function as a barrier metal. The lower electrode 102 can be made of a transparent conductive oxide such as ITO, IZO, AZO, or IGZO, or can have its layered structure. For the insulating layer 111, an inorganic material such as silicon nitride, silicon oxynitride, or silicon oxide, or an organic material such as resin, is used.

[0086] exist Figure 10A and Figure 10B In the configuration shown, unevenness can be generated in the portion of the lower electrode 102 that is arranged on the conductive via 114, resulting in unevenness in the portion of the upper electrode 104 that is arranged on the conductive via 114. Therefore, the insulating layer 151 is arranged in the region of the lower electrode 102 that overlaps with the conductive via 114 to mitigate the unevenness. In this case, in the orthogonal projection of the main surface 109 of the substrate 101, the relative positions of the conductive via 114 and the insulating layer 151 with respect to the geometric centroid of the light-emitting region 130 (opening 132) can be different among the light-emitting elements 120. The positions of the conductive via 114 and the insulating layer 151 can be intentionally different considering characteristics, or can be different as a result of process variations. In the region of the light-emitting layer 131 that overlaps with the insulating layer 151 in the orthogonal projection of the main surface 109 of the substrate 101, no light is emitted because no current flows between the lower electrode 102 and the upper electrode 104. Therefore, in Figure 10A and Figure 10B The brightness distribution in the light-emitting region 130 is different between the light-emitting elements 120a and 120b shown.

[0087] Even in this case, similar to Figure 7A and 7B The configuration shown is as follows: Figure 10AAs shown, in pixel 110 according to this embodiment, the area of ​​the incident region 133 is larger than the area of ​​the light-emitting region 130. Therefore, even if the brightness distribution in the light-emitting region 130 differs between pixels 110a and 110b, light emitted from a large area of ​​the light-emitting region 130 can be extracted in the front direction of the light-emitting device 100 (the normal direction of the main surface 109 of the substrate 101). Figure 10A As shown, the entire outer edge of the light-emitting region 130 can be arranged inside the outer edge of the incident region 133. Therefore, light can be extracted from the entire light-emitting region 130 in the frontal direction via the microlens 107. Consequently, if the same amount of current flows through the light-emitting elements 120 of pixels 110a and 110b, the luminous intensity in the frontal direction after transmission through the microlens 107 tends to be approximately the same between pixels 110. This allows for a highly uniform display in the light-emitting device 100. As a result, the display quality of the light-emitting device 100 can be improved.

[0088] exist Figure 10A and Figure 10B In the configuration shown, the insulating layer 151 may not be provided. In this case, as described above, the relative positions of the conductive via 114 with respect to the geometric centroid of the light-emitting region 130 (opening 132) in an orthogonal projection onto the main surface 109 of the substrate 101 may differ between the light-emitting elements 120. In this case, if the reflectivity of the conductive via 114 is different from the reflectivity of the reflective layer 112, the brightness distribution in the light-emitting region 130 between the light-emitting elements 120a and 120b will change. Furthermore, for example, even if the relative positions of the conductive via 114 with respect to the geometric centroid of the light-emitting region 130 (opening 132) are the same, if the reflectivity of the conductive via 114 differs between the light-emitting elements 120, the brightness distribution in the light-emitting region will change between the light-emitting elements 120 regardless of the presence or absence of the insulating layer 151.

[0089] Even in these cases, in the pixel 110 according to this embodiment, the area of ​​the incident region 133 is larger than the area of ​​the light-emitting region 130. Therefore, even if the brightness distribution in the light-emitting region 130 differs among the pixels 110, light emitted from a large area of ​​the light-emitting region 130 can be extracted in the frontal direction (normal direction of the main surface 109 of the substrate 101) of the light-emitting device 100. Therefore, if the same amount of current flows through the light-emitting elements 120 of each pixel 110, the luminous intensity in the frontal direction after transmission through the microlens 107 tends to be approximately the same among the pixels 110. This allows for a highly uniform display in the light-emitting device 100. As a result, the display quality of the light-emitting device 100 can be improved.

[0090] As in this embodiment, in the light-emitting element 120 where the reflective layer 112 is arranged between the lower electrode 102 and the structure 108, and the insulating layer 111 is arranged between the reflective layer 112 and the lower electrode 102, not only does the reflective layer 112 have an in-plane distribution of reflectivity, but the insulating layer 111 also has an in-plane distribution. Therefore, the brightness distribution in the light-emitting region 130 tends to be different among the light-emitting elements 120. Furthermore, in the configuration that provides a conductive via 114 connecting the lower electrode 102 and the reflective layer 112, as described above, due to the effect of arranging the conductive via 114, the brightness distribution in the light-emitting region 130 tends to be different among the light-emitting elements 120. Therefore, the configuration where the insulating layer 111, which functions as an optical adjustment layer, is arranged between the lower electrode 102 and the reflective layer 112 can fully enjoy the effects of this disclosure.

[0091] Figure 11 It is shown Figure 10A and Figure 10B A diagram showing a modified example of the light-emitting element 120 arranged in pixel 110. Figure 11 In the configuration shown, the light-emitting element 120 does not include the insulating layer 111 which functions as an optical adjustment layer, but instead includes a conductive layer 116 which functions as an electro-corrosion suppression layer between the lower electrode 102 and the reflective layer 112. The remaining configurations can be the same as those described above. Different configurations will be described primarily here, and descriptions of configurations that can be the same will be omitted as appropriate.

[0092] The material of the conductive layer 116 can be selected from cobalt, molybdenum, platinum, tantalum, titanium, titanium nitride, and tungsten, etc. The conductive layer 116 can be an alloy or compound of these materials. For example, the conductive layer 116 can contain titanium nitride as the main component. From the perspective of reflectivity, the film thickness of the conductive layer 116 can be less than 10 nm.

[0093] The in-plane distribution of reflectivity of the conductive layer 116 can vary among the light-emitting elements 120. For the conductive layer 116, a material with lower reflectivity compared to the reflective layer 112 is often used. Therefore, to increase the overall reflectivity of the reflective layer 112 and the conductive layer 116, the conductive layer 116 needs to be thinned. Since the formation of the thin film is difficult to control during manufacturing, this often results in an in-plane distribution of reflectivity within the conductive layer 116. Consequently, the brightness distribution in the light-emitting region 130 tends to differ among the light-emitting elements 120.

[0094] Conversely, as described above, in pixel 110 according to this embodiment, the area of ​​the incident region 133 is also larger than the area of ​​the light-emitting region 130. Therefore, even if the brightness distribution in the light-emitting region 130 differs between pixels 110a and 110b, light emitted from a large area of ​​the light-emitting region 130 can be extracted in the frontal direction (normal direction of the main surface 109 of the substrate 101) of the light-emitting device 100. Therefore, if the same amount of current flows through the light-emitting elements 120 of each pixel 110, the luminous intensity in the frontal direction after transmission through the microlens 107 tends to be approximately the same among pixels 110. This allows for a highly uniform display in the light-emitting device 100. As a result, the display quality of the light-emitting device 100 can be improved.

[0095] When the reflective layer 112 contains aluminum or silver as the main component and a sub-component such as copper or nickel forms an alloy with the main component, stable conduction with the lower electrode 102 using ITO or IZO can be achieved in a portion of the reflective layer 112 even without the conductive layer 116. Similarly, in this case, an in-plane distribution of reflectivity occurs in the reflective layer 112. Even in this case, the above-mentioned effects can be obtained by utilizing the configuration according to this embodiment, where the area of ​​the incident region 133 is larger than the area of ​​the light-emitting region 130.

[0096] Now refer to Figures 12A to 20B This section describes application examples of the light-emitting device 100 according to this embodiment in image forming apparatus, display apparatus, photoelectric conversion apparatus, electronic device, lighting apparatus, mobile body, and wearable device. It will be assumed that the following description is given: In the pixels 110 (sometimes referred to as pixels or sub-pixels) arranged in the light-emitting device 100, for example, organic light-emitting elements (OLEDs) such as organic EL elements using organic light-emitting materials are arranged (corresponding to the light-emitting element 120 described above). Details of each component arranged in the pixels 110 (light-emitting element 120) of the light-emitting device 100 will be described first, and then application examples will be described.

[0097] An organic light-emitting element according to an embodiment of the present disclosure includes a first electrode, a second electrode, and an organic compound layer disposed between these electrodes. One of the first and second electrodes is an anode, and the other electrode is a cathode. In the organic light-emitting element according to this embodiment, the organic compound layer can be a single layer or a stack formed of multiple layers, as long as it includes a light-emitting layer. Here, if the organic compound layer is a stack formed of multiple layers, the organic compound layer may include, in addition to the light-emitting layer, a hole injection layer, a hole transport layer, an electron blocking layer, a hole / exciton blocking layer, an electron transport layer, and an electron injection layer, etc. The light-emitting layer can be a single layer or a stack formed of multiple layers. If the light-emitting layer includes multiple layers, a charge-generating layer can be disposed between the light-emitting layers. The charge-generating layer can be made of a compound with a lower LUMO than the LUMO of the hole transport layer, and the LUMO of the charge-generating layer can be lower than the HOMO of the hole transport layer. Here, the molecular orbital energy of the organic compound layer can be the molecular orbital energy of the organic compound having the largest weight ratio in the organic compound layer.

[0098] Here, we assume the following description: the closer the HOMO and LUMO are to the vacuum level, the "higher" they are. When the LUMO of the charge generation layer is lower than the HOMO of the hole transport layer, the LUMO of the charge generation layer is closer to the vacuum level than the HOMO of the hole transport layer.

[0099] The HOMO and LUMO in this specification can be calculated using molecular orbital calculations. Molecular orbital calculations are performed using density functional theory (DFT), etc. The functionals can be calculated using B3LYP, and the basis functions can be... We have developed a strong, smooth-wave driving system using Gaussian 09 (Gaussian 09, Revision C.01, MJFrisch, GW Trucks, HB Schlegel, GE Scuseria, MA Robb, JR Cheeseman,G. Scalmani, V. Barone, B. Mennucci, GA Petersson, H. Nakatsuji, M.Caricato, X. Li, HP Hratchian, AF Izmaylov, J. Bloino, G. Zheng, JLSonnenberg, M. Hada, M. Ehara, K. Toyota, R. Fukuda, J. Hasegawa, M. Ishida,T. Kitao O, Nakai H, Vreven T, Montgomery Jr. JA, Peralta JE, Ogliaro M, Bearpark M, Heyd JJ, Brothers E, Kudin KN, Staroverov VN, Keith T, Kobayashi R, Normand K, Raghavachari K, Rendell, Burant JC, Iyengar SS, Tomasi J, Cossi M, Rega N, JMMillam, Klene M, Knox JB, Cross, V Bakken, C Adamo, J Jaramillo, R Gomperts, RE Stratmann, O Yazyev, AJ Austin, R Cammi, C Pomelli, JW Ochterski, RL Martin, K Morokuma, VG Zakrzewski, GA Voth, Salvador P, Dannenberg JJ, Dapprich S, Daniels AD, Farkas O, Foresman JB, Ortiz JV, Cioslowski J, and DJ(Fox, Gaussian, Inc., Wallingford CT, 2010) to execute.

[0100] The HOMO and LUMO in this specification can be calculated using ionization potential and band gap. The HOMO can be estimated by measuring the ionization potential. The ionization potential can be measured by dissolving the compound to be measured in a solvent such as toluene and using a measuring device such as AC-3. The band gap can be measured by dissolving the compound to be measured in a solvent such as toluene and irradiating the compound with excitation light. The band gap can be measured by measuring the absorption edge of the excitation light. Alternatively, the band gap can be measured by depositing the compound to be measured on a substrate such as glass and exposing the deposited film to excitation light. The band gap can be measured by measuring the absorption edge of the absorption spectrum of the excitation light absorbed by the deposited film.

[0101] The LUMO can be calculated using the band gap and ionization potential. The LUMO can be estimated by subtracting the ionization potential from the band gap.

[0102] The LUMO can also be estimated from the reduction potential. For example, cyclic voltammetry (CV) measurements can be used to estimate the single-electron reduction potential. CV measurements can be performed, for example, in a 0.1 M tetrabutylammonium perchlorate DMF solution using Ag / Ag. + The reduction potential (LUMO) was determined using a reference electrode, a Pt counter electrode, and a glassy carbon working electrode. The LUMO can be estimated by adding -4.8 eV to the difference between the reduction potential of the obtained compound and the reduction potential of ferrocene.

[0103] If the organic compound according to this embodiment is included in the light-emitting layer, the light-emitting layer may be a layer made solely of the organic compound according to this embodiment or a layer made of organometallic complexes and other compounds according to this embodiment. Here, if the light-emitting layer is a layer made of organometallic complexes and other compounds according to this embodiment, the organic compound according to this embodiment may be used as the host or guest of the light-emitting layer. Alternatively, the organic compound may be used as an auxiliary material that can be included in the light-emitting layer. Here, the host is the compound with the largest mass ratio among the compounds forming the light-emitting layer. The guest is the compound with a mass ratio less than that of the host among the compounds forming the light-emitting layer, and is the compound responsible for the main light emission. The auxiliary material is a compound whose mass ratio is less than that of the host among the compounds forming the light-emitting layer and assists the guest in emitting light. Note that the auxiliary material is also referred to as the second host. The host material may be referred to as the first compound, and the auxiliary material may be referred to as the second compound.

[0104] If an organic compound according to one embodiment is used as a guest in the emissive layer, the concentration of the guest relative to the entire emissive layer may be from 0.01 mass percentage (inclusive) to 20 mass percentage (inclusive), or from 0.1 mass percentage (inclusive) to 10 mass percentage (inclusive). The guest is also referred to as a dopant.

[0105] The organometallic complex according to this embodiment can be used as a constituent material of organic compound layers other than the light-emitting layer forming the organic light-emitting element according to this embodiment. More specifically, the organometallic complex can be used as a constituent material of electron transport layers, electron injection layers, hole transport layers, hole injection layers, or hole blocking layers, etc. In this case, the emission color of the organic light-emitting element is not limited to red. More specifically, the emission color of the organic light-emitting element can be white or an intermediate color.

[0106] Traditionally known low-molecular-weight and high-molecular-weight hole-injection or hole-transporting compounds, host compounds, luminescent compounds, electron-injection or electron-transporting compounds, etc., can be used together as needed. Examples of these compounds will be described below.

[0107] Materials with high hole mobility can be suitably used as hole injection / transport materials, thereby facilitating hole injection from the anode and allowing the injected holes to be transported to the light-emitting layer. Furthermore, materials with high glass transition temperatures can be suitably used to reduce film quality degradation in organic light-emitting elements, such as crystallization. Examples of low-molecular-weight and high-molecular-weight materials with hole injection / transport properties include triarylamine derivatives, arylcarbazole derivatives, phenylenediamine derivatives, stilbene derivatives, phthalocyanine derivatives, porphyrin derivatives, poly(vinylcarbazole), poly(thiophene), and other conductive polymers. The aforementioned hole injection / transport materials can also be suitably used in electron blocking layers. Detailed examples of compounds used as hole injection / transport materials will be shown below. Materials are not limited to these.

[0108]

[0109] In hole transport materials, HT16 to HT18 can reduce the driving voltage when used in layers in contact with the anode. HT16 is widely used in organic light-emitting devices. HT2, HT3, HT4, HT5, HT6, HT10, and HT12 can be used in organic compound layers adjacent to HT16. Multiple materials can be used in a single organic compound layer.

[0110] Examples of luminescent materials primarily related to luminescence function include fused-ring compounds (e.g., fluorene derivatives, naphthalene derivatives, pyrene derivatives, perylene derivatives, tetraphenylene derivatives, anthracene derivatives, and rubrene), quinacridone derivatives, coumarin derivatives, stilbene derivatives, organoaluminum complexes such as tris(8-hydroxyquinoline)aluminum, iridium complexes, platinum complexes, rhenium complexes, copper complexes, europium complexes, ruthenium complexes, and polymeric derivatives such as poly(phenylenevinylene) derivatives, poly(fluorene) derivatives, and poly(phenylene) derivatives.

[0111] Detailed examples of compounds used as luminescent materials will be shown below. Materials are not limited to these.

[0112]

[0113]

[0114] This is suitable if the luminescent material is a hydrocarbon compound, because it can reduce the decrease in luminescence efficiency caused by the formation of excitocomplexes, or reduce the decrease in color purity caused by changes in the luminescence spectrum of the luminescent material due to the formation of excitocomplexes.

[0115] In one embodiment, the hydrocarbon compound is a compound made only of carbon and hydrogen, and includes BD7, BD8, GD5 to GD9, and RD1 among the compounds exemplified above.

[0116] This is suitable if the luminescent material is a condensed polycyclic compound comprising a 5-membered ring, because oxidation occurs almost without consequence due to the high ionization potential, and long-lifetime devices with high durability can be obtained. Examples of such compounds exemplified above include BD7, BD8, GD5 through GD9, and RD1.

[0117] Examples of light-emitting layer host or light-emitting auxiliary materials contained in the light-emitting layer are aromatic compounds or their derivatives, carbazole derivatives, dibenzofuran derivatives, dibenzothiophene derivatives, organoaluminum complexes such as tris(8-hydroxyquinoline)aluminum, and organoberyllium complexes.

[0118] Detailed examples of compounds used as the main body or auxiliary material of the luminescent layer included in the luminescent layer will be shown below. Materials are not limited to these.

[0119]

[0120] The host material can be a hydrocarbon compound. In one embodiment, the hydrocarbon compound is a compound made only of carbon and hydrogen, and includes EM1 to EM12 and EM16 to EM27 among the compounds exemplified above. As a host material, from a stability perspective, materials that do not have carbon-heteroatom bonds in the single bonds of the aryl units in their structure (such as F3 in compound 1) are suitable.

[0121] Electron transport materials can be selected arbitrarily from materials capable of transporting electrons injected from the cathode to the light-emitting layer, taking into account a balance with the hole mobility of the hole transport material. Examples of materials with electron transport properties are oxadiazole derivatives, oxazole derivatives, pyrazine derivatives, triazole derivatives, triazine derivatives, quinoline derivatives, quinoxaline derivatives, phenanthroline derivatives, organoaluminum complexes, and fused-ring compounds (e.g., fluorene derivatives, naphthalene derivatives, thionyl derivatives, and anthracene derivatives). These electron transport materials can also be used in hole blocking layers.

[0122] Detailed examples of compounds used as electron transport materials will be shown below. Materials are not limited to these.

[0123]

[0124] Electron injection materials can be arbitrarily selected from those that facilitate electron injection from the cathode, taking into account the balance with hole injection. Organic compounds include n-type dopants and reducing dopants. Examples are compounds containing alkali metals (such as lithium fluoride), lithium complexes (such as lithium-hydroxyquinoline complexes), benzimidazolidene derivatives, imidazolidene derivatives, fulvalene derivatives, and acridine derivatives.

[0125] Electron injection materials can also be used in conjunction with the aforementioned electron transport materials.

[0126] Configuration of organic light-emitting elements

[0127] An organic light-emitting element is formed by creating an insulating layer, a first electrode, an organic compound layer, and a second electrode on a substrate. A protective layer, a color filter, and a microlens can be formed on the cathode. If a color filter is provided, a planarization layer can be formed between the protective layer and the color filter. The planarization layer can be formed using acrylic resins, etc. This also applies when a planarization layer is formed between the color filter and the microlens.

[0128] substrate

[0129] Quartz, glass, silicon wafers, resin, or metal can be used as substrates. Furthermore, switching elements such as transistors and wiring patterns can be formed on the substrate, and an insulating layer can be formed on these switching elements. The insulating layer can be made of any material, as long as it allows the formation of contact holes to enable the wiring pattern to be formed between the first electrode and the substrate, and ensures insulation from unconnected wiring patterns. For example, resins such as polyimide, silicon oxide, or silicon nitride can be used as the insulating layer.

[0130] electrode

[0131] As electrodes, a pair of electrodes can be used. This pair of electrodes can be an anode and a cathode. When an electric field is applied in the direction in which the organic light-emitting element emits light, the electrode with the higher potential is the anode, and the other electrode is the cathode. It can also be considered that the electrode that supplies holes to the light-emitting layer is the anode, and the electrode that supplies electrons is the cathode.

[0132] Materials with a high work function can be selected as the constituent materials of the anode. For example, metals such as gold, platinum, silver, copper, nickel, palladium, cobalt, selenium, vanadium, or tungsten, mixtures containing some of these, alloys obtained by combining some of them, or metal oxides such as tin oxide, zinc oxide, indium oxide, indium tin oxide (ITO), or zinc indium oxide can be used. Furthermore, conductive polymers such as polyaniline, polypyrrole, or polythiophene can also be used as constituent materials of the anode.

[0133] One of these electrode materials can be used alone, or two or more of them can be used in combination. The anode can be formed from a single layer or multiple layers.

[0134] If the electrode is used as a reflective electrode, materials such as chromium, aluminum, silver, titanium, tungsten, molybdenum, their alloys, or stacked layers thereof can be used. These materials can also be used as reflective films that do not function as electrodes. If a transparent electrode is used, a transparent conductive oxide layer made of indium tin oxide (ITO) or indium zinc oxide can be used, but this disclosure is not limited thereto. The electrode can be formed using photolithography.

[0135] On the other hand, materials with low work functions can be selected as the constituent materials of the cathode. Examples of such materials include alkali metals such as lithium, alkaline earth metals such as calcium, metals such as aluminum, titanium, manganese, silver, lead, or chromium, and mixtures containing some of these. Alternatively, alloys obtained by combining these metals can also be used. For example, magnesium-silver alloys, aluminum-lithium alloys, aluminum-magnesium alloys, silver-copper alloys, or zinc-silver alloys can be used. Metal oxides such as indium tin oxide (ITO) can also be used. One of these electrode materials can be used alone, or two or more of them can be used in combination. The cathode can have a single-layer or multi-layer structure. Silver can be used as the cathode. To suppress the accumulation of silver, silver alloys can be used. The ratio of the alloy is not limited, as long as it can suppress the accumulation of silver. For example, the ratio between silver and other metals can be 1:1 or 3:1, etc.

[0136] The cathode can be a top emitting element using an oxide conductive layer made of ITO or the like, or a bottom emitting element using a reflective electrode made of aluminum (Al) or the like, and there are no particular limitations. There are no particular limitations on the method of forming the cathode, but if DC sputtering or AC sputtering is used, good coverage is achieved for the film to be formed, and the cathode resistance can be reduced.

[0137] Pixel isolation layer

[0138] The pixel isolation layer can be formed from so-called silicon oxides such as silicon nitride (SiN), silicon oxynitride (SiON), or silicon oxide (SiO) using chemical vapor deposition (CVD). To increase the in-plane resistance of the organic compound layer, the organic compound layer (especially the hole transport layer) can be deposited thinly on the sidewalls of the pixel isolation layer. More specifically, the organic compound layer can be deposited on the sidewalls with a thin film thickness by increasing the cone angle of the sidewalls of the pixel isolation layer or by increasing the vignetting effect during vapor deposition.

[0139] On the other hand, the cone angle of the sidewalls of the pixel isolation layer or the film thickness of the pixel isolation layer can be adjusted to a degree that no space is formed in the protective layer formed on the pixel isolation layer. Since no space is formed in the protective layer, the generation of defects in the protective layer can be reduced. Because the generation of defects in the protective layer is reduced, the decrease in reliability caused by the generation of dark spots or the occurrence of conduction failure of the second electrode can be reduced.

[0140] According to this embodiment, even if the taper angle of the sidewall of the pixel isolation layer is not sharp, charge leakage to adjacent pixels can be effectively suppressed. As a result of this consideration, it has been found that a taper angle of 60° (inclusive) to 90° (inclusive) can sufficiently reduce the occurrence of defects. The film thickness of the pixel isolation layer can be from 10 nm (inclusive) to 150 nm (inclusive). Similar effects can be obtained in a configuration that includes only a pixel electrode without a pixel isolation layer. However, in this case, the film thickness of the pixel electrode is set to be equal to or less than half the film thickness of the organic layer, or the end of the pixel electrode is formed into a positive cone shape with a taper of less than 60°. This reduces short circuits in the organic light-emitting element.

[0141] Furthermore, when the first electrode is a cathode and the second electrode is an anode, high color gamut and low voltage driving can be achieved by forming an electron transport material and a charge transport layer, and forming a light-emitting layer on the charge transport layer.

[0142] Organic compound layer

[0143] The organic compound layer can be formed as a single layer or multiple layers. If the organic compound layer comprises multiple layers, these layers can be referred to as hole injection layers, hole transport layers, electron blocking layers, light-emitting layers, and electron transport layers, depending on their function. The organic compound layer is primarily made of organic compounds, but may contain inorganic atoms and inorganic compounds. For example, the organic compound layer may contain copper, lithium, magnesium, aluminum, iridium, platinum, molybdenum, or zinc. The organic compound layer can be arranged between the first and second electrodes, and can be arranged in contact with the first and second electrodes. If multiple light-emitting layers are provided, a charge-generating section can be arranged between the first and second light-emitting layers. The charge-generating section may contain organic compounds with a minimum unoccupied molecular orbital energy (LUMO) of -5.0 eV or less. This also applies to the case where a charge-generating section is arranged between the second and third light-emitting layers.

[0144] protective layer

[0145] A protective layer can be formed on the cathode. For example, by adhering a glass coated with a desiccant to the cathode, the penetration of water and the like into the organic compound layer can be suppressed, and the occurrence of display defects can be inhibited. Furthermore, as another embodiment, a passivation layer made of silicon nitride or the like can be formed on the cathode to suppress the penetration of water and the like into the organic compound layer. For example, a protective layer can be formed by forming a cathode, transferring it to another chamber without breaking the vacuum, and forming a silicon nitride layer with a thickness of 2 μm using a CVD method. The protective layer can be formed using atomic layer deposition (ALD) after deposition using a CVD method. The material of the protective layer formed by the ALD method is not limited and can be silicon nitride, silicon oxide, or aluminum oxide, etc. Silicon nitride can also be formed on the protective layer formed by the ALD method using a CVD method. The film thickness of the protective layer formed by the ALD method can be less than the film thickness of the protective layer formed by the CVD method. More specifically, the film thickness of the protective layer formed by the ALD method can be 50% or less, or 10% or less, of the film thickness of the protective layer formed by the CVD method.

[0146] Color filters

[0147] A color filter can be disposed on the protective layer. For example, a color filter, taking into account the size of the organic light-emitting element, can be disposed on another substrate, and the substrate with the color filter can be bonded to the substrate on which the organic light-emitting element is disposed. Alternatively, for example, the color filter can be patterned on the aforementioned protective layer using photolithography. The color filter can be formed from a polymer material.

[0148] planarization layer

[0149] A planarization layer can be placed between the color filter and the protective layer. The planarization layer is provided to reduce the unevenness of the layers beneath it. Without limiting the purpose of the planarization layer, it can be referred to as a material resin layer. The planarization layer can be formed from organic compounds and can be made from low-molecular-weight or high-molecular-weight materials. Considering the reduction of unevenness, high-molecular-weight organic compounds can be used for the planarization layer.

[0150] Planarization layers can be disposed above and below the color filter. In this case, the same or different constituent materials can be used for these planarization layers. More specifically, examples of materials for planarization layers include polyvinylcarbazole resin, polycarbonate resin, polyester resin, ABS resin, acrylic resin, polyimide resin, phenolic resin, epoxy resin, silicone resin, and urea resin.

[0151] microlenses

[0152] Organic light-emitting devices may include optical components such as microlenses on the light-emitting side. Microlenses can be made of acrylic resins or epoxy resins. Microlenses are designed to increase the amount of light extracted from the organic light-emitting device and control the direction of the extracted light. Microlenses may have a hemispherical shape. If a microlens has a hemispherical shape, then in the tangent to the contact hemisphere, there exists a tangent parallel to the insulating layer, and the contact between this tangent and the hemisphere is the vertex of the microlens. Even in any cross-sectional view, the vertex of the microlens can be determined in the same way. That is, in the cross-sectional view, in the tangent to the semicircle of the microlens, there exists a tangent parallel to the insulating layer, and the contact between the tangent and the semicircle is the vertex of the microlens.

[0153] Furthermore, the midpoint of a microlens can be defined. In the cross-section of a microlens, a line segment is assumed to extend from the point where one arc shape ends to the point where another arc shape ends, and the midpoint of this line segment can be called the midpoint of the microlens. The cross-section used to determine the vertex and midpoint can be a cross-section perpendicular to the insulating layer.

[0154] The microlens includes a first surface containing a protrusion and a second surface opposite to the first surface. The second surface may be disposed on the functional layer (light-emitting layer) side of the first surface. For this configuration, the microlens needs to be formed on the light-emitting device. If the functional layer is an organic layer, high-temperature processes can be avoided in the fabrication steps of the microlens. Furthermore, if the second surface is configured to be disposed on the functional layer side of the first surface, the glass transition temperatures of all organic compounds forming the organic layer can be 100°C or higher. For example, 130°C or higher is suitable.

[0155] Opposing substrate

[0156] A counter substrate can be disposed on the planarization layer. The counter substrate is called a counter substrate because it is disposed at a position corresponding to the aforementioned substrate. The constituent material of the counter substrate can be the same as that of the aforementioned substrate. If the aforementioned substrate is a first substrate, the counter substrate can be a second substrate.

[0157] Organic layer

[0158] The organic compound layers (hole injection layer, hole transport layer, electron blocking layer, light-emitting layer, hole blocking layer, electron transport layer, and electron injection layer, etc.) forming the organic light-emitting element according to embodiments of the present disclosure can be formed by the methods described below.

[0159] The organic compound layer forming the organic light-emitting element according to embodiments of the present disclosure can be formed by a dry process using methods such as vacuum deposition, ionization deposition, sputtering, or plasma methods. Instead of a dry process, a wet process can be used, which forms the layer by dissolving a solute in a suitable solvent and using a known coating method (e.g., spin coating, dip coating, casting, LB coating, or inkjet coating).

[0160] Here, when the layer is formed by vacuum deposition or solution coating, crystallization is almost non-existent, and excellent time stability is achieved. Furthermore, when forming the layer using a coating method, it can be combined with a suitable adhesive resin to form a film.

[0161] Examples of adhesive resins include polyvinylcarbazole resin, polycarbonate resin, polyester resin, ABS resin, acrylic resin, polyimide resin, phenolic resin, epoxy resin, silicone resin, and urea resin. However, adhesive resins are not limited to these.

[0162] One of these adhesive resins can be used alone as a homopolymer or copolymer, or two or more of them can be used in combination. Furthermore, additives such as known plasticizers, antioxidants, and UV absorbers can be used as needed.

[0163] Pixel circuit

[0164] The light-emitting device may include pixel circuits connected to the light-emitting elements. The pixel circuits may be active matrix circuits that independently control the light emission of a first light-emitting element and a second light-emitting element. The active matrix circuits may be voltage- or current-programmable circuits. The driving circuitry includes pixel circuits for each pixel. The pixel circuits may include the light-emitting element, a transistor for controlling the brightness of the light-emitting element, a transistor for controlling the timing of light emission, a capacitor for maintaining the gate voltage of the transistor controlling the brightness of light emission, and a transistor for connection to GND without interference from the light-emitting element.

[0165] The light-emitting device includes a display area and a peripheral area arranged around the display area. The light-emitting device includes pixel circuitry in the display area and display control circuitry in the peripheral area. The mobility of the transistors forming the pixel circuitry may be less than the mobility of the transistors forming the display control circuitry.

[0166] The slope of the current-voltage characteristic of the transistor forming the pixel circuit can be less than the slope of the current-voltage characteristic of the transistor forming the display control circuit. The slope of the current-voltage characteristic can be measured using the so-called Vg-Ig characteristic.

[0167] The transistor that forms the pixel circuit is a transistor connected to a light-emitting element such as a first light-emitting element.

[0168] Pixels

[0169] An organic light-emitting device comprises multiple pixels. Each pixel includes sub-pixels that emit light components of different colors. For example, sub-pixels may each include R, G, and B emission colors.

[0170] Within each pixel, an area also known as a pixel aperture emits light. Pixel apertures can have a size from 5 μm (inclusive) to 15 μm (inclusive). More specifically, pixel apertures can have sizes such as 11 μm, 9.5 μm, 7.4 μm, or 6.4 μm.

[0171] The distance between subpixels can be 10 μm or less, and more specifically, it can be 8 μm, 7.4 μm or 6.4 μm.

[0172] Pixels in a planar graph can have a known arrangement. For example, pixels can have a stripe arrangement, delta arrangement, pentile arrangement, or Bayer arrangement. The shape of each subpixel in the planar graph can be any known shape. For example, quadrilaterals such as rectangles or rhombuses, or hexagons, are all possible. Of course, shapes that are not exactly rectangular but are close to rectangles are included in rectangles. The shapes of subpixels and pixel arrangements can be combined.

[0173] Application of organic light-emitting elements in embodiments of this disclosure

[0174] The organic light-emitting element according to embodiments of this disclosure can be used as a component of a display device or a lighting device. Furthermore, the organic light-emitting element is suitable for exposure light sources in electrophotographic image forming apparatuses, backlight sources in liquid crystal display devices, and light-emitting devices that include color filters in white light sources, etc.

[0175] The display device may be an image information processing device, which includes an image input unit for inputting image information from area CCD, linear CCD and memory card, etc., and an information processing unit for processing the input information and displaying the input image on the display unit.

[0176] Additionally, the display unit included in a camera device or inkjet printer can have a touch panel function. The driving type of this touch panel function can be infrared, capacitive, resistive, or electromagnetic induction, and there are no particular limitations. The display device can be used as the display unit of a multifunction printer.

[0177] Next, more details will be described with reference to the accompanying drawings. Figure 12AAn example of pixels arranged in the light-emitting device 100 is shown. Each pixel includes sub-pixels 810. The sub-pixels are divided into sub-pixels 810R, 810G, and 810B according to their emission color. The emission color can be distinguished by the wavelength of the light component emitted from the light-emitting layer, or the light emitted from each sub-pixel can be selectively transmitted or undergo color conversion via a color filter or the like. Each sub-pixel includes a reflective electrode 802 serving as a first electrode on an interlayer insulating layer 801, an insulating layer 803 covering the end of the reflective electrode 802, an organic compound layer 804 covering the first electrode and the insulating layer, a transparent electrode 805 serving as a second electrode, a protective layer 806, and a color filter 807.

[0178] The interlayer insulating layer 801 may include transistors and capacitor elements disposed in or beneath the interlayer insulating layer 801. The transistors and the first electrode may be electrically connected via a contact hole (not shown).

[0179] The insulating layer 803 can also be referred to as a dam or pixel isolation film. The insulating layer 803 covers the end of the first electrode and is arranged to surround the first electrode. The portion of the first electrode where the insulating layer 803 is not disposed contacts the organic compound layer 804 to form a light-emitting region.

[0180] The organic compound layer 804 includes a hole injection layer 841, a hole transport layer 842, a first light-emitting layer 843, a second light-emitting layer 844, and an electron transport layer 845.

[0181] The second electrode can be a transparent electrode, a reflective electrode, or a semi-transparent electrode.

[0182] The protective layer 806 inhibits water penetration into the organic compound layer. The protective layer is shown as a single layer, but may comprise multiple layers. Each layer may be an inorganic compound layer or an organic compound layer.

[0183] Color filters 807 are classified into color filters 807R, 807G, and 807B according to color. Color filters can be formed on a planarization film (not shown). A resin protective layer (not shown) can be disposed on the color filter. Color filters can be formed on a protective layer 806. Alternatively, color filters can be disposed on a counter substrate such as a glass substrate, and then the substrates can be bonded together.

[0184] Figure 12BThe illustrated light-emitting device 800 includes an organic light-emitting element 826 (an example of a light-emitting element) and a TFT 818 (an example of a transistor). A substrate 811, such as glass or silicon, is provided, and an insulating layer 812 is provided on the substrate 811. An active element, such as the TFT 818, is arranged on the insulating layer, and a gate electrode 813, a gate insulating film 814, and a semiconductor layer 815 of the active element are also arranged thereon. The TFT 818 further includes the semiconductor layer 815, a drain electrode 816, and a source electrode 817. An insulating film 819 is provided on the TFT 818. The source electrode 817 and the anode 821 forming the organic light-emitting element 826 are connected via a contact hole 820 formed in the insulating film.

[0185] The method for electrically connecting the electrodes (anode and cathode) included in the organic light-emitting element 826 to the electrodes (source electrode and drain electrode) included in the TFT is not limited to Figure 12B The method shown illustrates this. That is, one of the anode and cathode is electrically connected to one of the source and drain electrodes of the TFT. A TFT indicates a thin-film transistor.

[0186] exist Figure 12B In the illustrated light-emitting device 800, the organic compound layer is exemplified as a single layer. However, the organic compound layer 822 may comprise multiple layers. A first protective layer 824 and a second protective layer 825 are disposed on the cathode 823 to suppress the degradation of the organic light-emitting element.

[0187] Transistors are used as Figure 12B The switching element in the light-emitting device 800 shown can be replaced by other switching elements.

[0188] Figure 12B The transistors used in the illustrated light-emitting device 800 are not limited to transistors using monocrystalline silicon wafers, but can also be thin-film transistors that include an active layer on the insulating surface of a substrate. Examples of active layers include monocrystalline silicon, amorphous silicon, non-monocrystalline silicon such as microcrystalline silicon, and non-monocrystalline oxide semiconductors such as indium zinc oxide and indium gallium zinc oxide. Note that thin-film transistors are also referred to as TFT elements.

[0189] Included Figure 12B The transistor in the light-emitting device 800 shown can be formed in a substrate such as a silicon substrate. Forming a transistor in a substrate means forming the transistor by processing the substrate such as a silicon substrate. That is, when the transistor is included in the substrate, the substrate and the transistor can be considered to be formed integrally.

[0190] The luminous intensity of the organic light-emitting element according to this embodiment can be controlled by a TFT, which serves as an example of a switching element, and multiple organic light-emitting elements can be arranged in a plane to display an image according to the luminous intensity of each element. Here, the switching element according to this embodiment is not limited to a TFT, but can be a transistor formed of low-temperature polysilicon, or an active matrix driver formed on a substrate such as a silicon substrate. The term "on the substrate" can mean "in the substrate". The choice between setting the transistor in the substrate or using a TFT is based on the size of the display unit. For example, if the size is about 0.5 inches, the organic light-emitting element can be set on a silicon substrate.

[0191] Figures 13A to 13C This is a schematic diagram illustrating an example of an image forming apparatus using a light-emitting device 100 according to this embodiment. Figure 13A The image forming apparatus 926 shown includes a photosensitive element 927, an exposure light source 928, a developing unit 931, a charging unit 930, a transfer device 932, and a transport unit 933 (in Figure 13A The configuration shown includes a conveyor roller and a fixing device 935.

[0192] Light 929 is emitted from the exposure light source 928, and an electrostatic latent image is formed on the surface of the photosensitive member 927. The light-emitting device 100 can be applied to the exposure light source 928. The developing unit 931 functions as a developing apparatus, which includes a toner or the like as a developing agent and applies the developing agent to the exposed photosensitive member 927. The charging unit 930 charges the photosensitive member 927. The transfer apparatus 932 transfers the developed image to the printing medium 934. The transport unit 933 transports the printing medium 934. The printing medium 934 can be, for example, paper or film. The fixing apparatus 935 fixes the image formed on the printing medium.

[0193] Figure 13B and Figure 13C Each of these diagrams is a schematic representation of a plurality of light-emitting units 936 arranged along the long side of a long substrate in an exposure light source 928. The light-emitting device 100 can be applied to each of the light-emitting units 936. That is, a plurality of pixels 110 are arranged along the long side of the substrate. Direction 937 is parallel to the axis of the photosensitive member 927. This direction is consistent with the direction of the axis when the photosensitive member 927 is rotated. This direction 937 can also be referred to as the long axis direction of the photosensitive member 927.

[0194] Figure 13B The diagram shows the arrangement of the light-emitting unit 936 along the long axis of the photosensitive member 927. Figure 13C Show as Figure 13BThe illustrated variation of the arrangement of the light-emitting units 936 shows that the light-emitting units 936 are arranged alternately in the column direction between the first and second columns. The light-emitting units 936 are arranged at different positions in the row direction between the first and second columns. In the first column, the plurality of light-emitting units 936 are arranged separately from each other. In the second column, the light-emitting units 936 are arranged at positions corresponding to the spaces between the light-emitting units 936 in the first column. Furthermore, in the row direction, the plurality of light-emitting units 936 are arranged separately from each other. Figure 13C The arrangement of the light-emitting units 936 shown can be described, for example, as a grid pattern arrangement, an interlaced pattern arrangement, or a checkerboard pattern arrangement.

[0195] Figure 14 This is a schematic diagram illustrating an example of a display device using the light-emitting device 100 according to this embodiment. The display device 1000 may include a touch panel 1003, a display panel 1005, a frame 1006, a circuit board 1007, and a battery 1008 between an upper cover 1001 and a lower cover 1009. Flexible printed circuits (FPCs) 1002 and 1004 are connected to the touch panel 1003 and the display panel 1005, respectively. Active components such as transistors are arranged on the circuit board 1007. If the display device 1000 is not a portable device, the battery 1008 is not required. Even when the display device 1000 is a portable device, it is not necessary to provide the battery 1008 at this location. The light-emitting device 100 may be applied to the display panel 1005. Pixels 110 arranged in the light-emitting device 100, which functions as the display panel 1005, are connected to and operate a control circuit that includes active components (such as transistors arranged on the circuit board 1007).

[0196] Figure 14 The display device 1000 shown can be used as a display unit of a photoelectric conversion device (also called a camera device), which includes an optical unit with multiple lenses and an image sensor for receiving light that has passed through the optical unit and converting the light photoelectrically into an electrical signal. The photoelectric conversion device may include a display unit for displaying information acquired by the image sensor. Alternatively, the display unit may be an externally exposed display unit or a display unit arranged in a viewfinder. The photoelectric conversion device may be a digital camera or a digital video camera.

[0197] Figure 15This is a schematic diagram illustrating an example of a photoelectric conversion device using the light-emitting device 100 according to this embodiment. The photoelectric conversion device 1100 may include a viewfinder 1101, a rear display 1102, an operation unit 1103, and a housing 1104. The photoelectric conversion device 1100 may also be referred to as a camera device. The light-emitting device 100 according to this embodiment can be applied to the viewfinder 1101 or the rear display 1102, which serves as a display unit. In this case, the light-emitting device 100 can display not only the image to be captured, but also environmental information and camera commands, etc. Examples of environmental information include the intensity and direction of external light, the speed of movement of the subject, and the possibility that the subject is covered by obstacles.

[0198] The timing suitable for video recording is often very short, and it is best to display information as quickly as possible. Therefore, a light-emitting device 100, which arranges pixels 110 including light-emitting elements 120 using organic light-emitting materials such as organic EL elements, can be used in a viewfinder 1101 or a rear display 1102. This is because organic light-emitting materials have a high response speed. In one embodiment, a light-emitting device 100 using organic light-emitting materials is more suitable for devices requiring high display speeds than one used in a liquid crystal display device.

[0199] The photoelectric conversion device 1100 includes an optical unit (not shown). This optical unit has multiple lenses and images formed on a photoelectric conversion element (not shown) that receives light passing through the optical unit and is housed in a housing 1104. The focal points of the multiple lenses can be adjusted by adjusting their relative positions. This operation can also be performed automatically.

[0200] The light-emitting device 100 can be applied to the display unit of an electronic device. In this case, the display unit can have both display and operation functions. Examples of portable terminals include mobile phones such as smartphones, tablet computers, and head-mounted displays.

[0201] Figure 16 This is a schematic diagram illustrating an example of an electronic device using the light-emitting device 100 according to this embodiment. The electronic device 1200 includes a display unit 1201, an operation unit 1202, and a housing 1203. The housing 1203 may house circuitry, a printed circuit board having the circuitry, a battery, and a communication unit. The operation unit 1202 may be a button or a touch panel type response unit. The operation unit 1202 may also be a biometric authentication unit for unlocking via fingerprint authentication, etc. Portable devices including a communication unit can also be considered communication devices. The light-emitting device 100 according to this embodiment can be applied to the display unit 1201.

[0202] Figure 17A and Figure 17BThis is a schematic diagram illustrating an example of a display device using the light-emitting device 100 according to this embodiment. Figure 17A A display device, such as a television monitor or a PC monitor, is shown. The display device 1300 includes a frame 1301 and a display unit 1302. The light-emitting device 100 according to this embodiment can be applied to the display unit 1302. The display device 1300 may include a base 1303 for supporting the frame 1301 and the display unit 1302. The base 1303 is not limited to... Figure 17A As shown in the diagram. For example, the lower edge of the frame 1301 can also function as a base 1303. Furthermore, the frame 1301 and the display unit 1302 can be bent. In this case, the radius of curvature can be from 5000 mm (inclusive) to 6000 mm (inclusive).

[0203] Figure 17B This is a schematic diagram illustrating another example of a display device using the light-emitting device 100 according to this embodiment. Figure 17B The display device 1310 shown is foldable and is a so-called foldable display device. The display device 1310 includes a first display unit 1311, a second display unit 1312, a housing 1313, and a bending point 1314. The light-emitting device 100 according to this embodiment can be applied to each of the first display unit 1311 and the second display unit 1312. The first display unit 1311 and the second display unit 1312 can also be a seamless display device. The first display unit 1311 and the second display unit 1312 can be divided by the bending point. The first display unit 1311 and the second display unit 1312 can display different images, and can also display a single image together.

[0204] Figure 18 This is a schematic diagram illustrating an example of an illumination device using the light-emitting device 100 according to this embodiment. The illumination device 1400 may include a housing 1401, a light source 1402, a circuit board 1403, an optical film 1404, and a light diffusion unit 1405. The light-emitting device 100 according to this embodiment can be applied to the light source 1402. The optical film 1404 may be a filter that improves the color rendering of the light source. When illuminated, the light diffusion unit 1405 can project the light over a wide range by effectively diffusing the light from the light source. The illumination device may also include a cover on its outermost side as needed. The illumination device 1400 may include either or both of the optical film 1404 and the light diffusion unit 1405.

[0205] Lighting device 1400 is, for example, a device for illuminating the interior of a room. Lighting device 1400 can emit white light, natural white light, or light of any color from blue to red. Lighting device 1400 may also include light control circuitry for controlling these light components. Lighting device 1400 may also include a power supply circuit connected to the light-emitting device 100, which functions as a light source 1402. The power supply circuitry is for converting AC voltage to DC voltage. The color temperature of white light is 4200K, and the color temperature of natural white light is 5000K. Lighting device 1400 may also include a color filter. Additionally, lighting device 1400 may include a heat dissipation unit. The heat dissipation unit dissipates internal heat to the outside of the device, and examples include metals with high specific heat and liquid silicon.

[0206] Figure 19A This is a schematic diagram of a car having a taillight as an example of a vehicle lighting device using the light-emitting device 100 according to this embodiment. The car 1500 has a taillight 1501, and may have a form in which the taillight 1501 is illuminated when braking or performing other operations. The light-emitting device 100 according to this embodiment can be used as a headlight for use as a vehicle lighting device.

[0207] The light-emitting device 100 according to this embodiment can be applied to a taillight 1501. The taillight 1501 may include a protective member for protecting the light-emitting device 100 that functions as the taillight 1501. The material of the protective member is not limited, as long as the material is a transparent material with a certain degree of strength, and an example is polycarbonate. The protective member may be made of a material obtained by mixing a furan dicarboxylic acid derivative or an acrylonitrile derivative into polycarbonate.

[0208] The vehicle 1500 may include a vehicle body 1503 and a window 1502 attached to the vehicle body 1503. This window may be a window for inspecting the front and rear of the vehicle, and may also be a transparent display such as a head-up display. For this transparent display, a light-emitting device 100 according to this embodiment can be used. In this case, the constituent materials of the electrodes, etc., of the light-emitting device 100 are formed of transparent components.

[0209] like Figure 19B As shown, the vehicle 1500 may include: a steering wheel 1504 for controlling the direction of movement of the moving body (vehicle); and a display unit 1505, which is mounted on the vehicle body 1503 and displays a map, the position of the moving body, the turning direction, and the rear view of the moving body, etc. The light-emitting device 100 according to this embodiment can be applied to the display unit 1505.

[0210] The vehicle 1500 is an example of a moving body, and the moving body according to this embodiment includes one or both of a drive force generating unit for generating a driving force primarily for moving the moving body and a rotating body primarily for moving the moving body. The drive force generating unit may be an engine or motor, etc. The rotating body may be a tire, wheel, ship propeller, or aircraft propeller or fan, etc. More specifically, the moving body may be a bicycle, car, train, ship, aircraft, or drone, etc. The moving body may include a main body and a lighting device disposed in the main body. The lighting device may be used to notify the main body of its current position. The lighting device may include a light-emitting device 100 according to this embodiment. The display unit may include the light-emitting device 100 according to this embodiment.

[0211] Reference Figure 20A and Figure 20B Further application examples of the light-emitting device 100 according to this embodiment are described. The light-emitting device 100 can be applied to systems that can be worn as wearable devices such as smart glasses, head-mounted displays (HMDs), or smart contact lenses. The camera display device used in these application examples includes a camera device capable of photoelectric conversion of visible light and a light-emitting device capable of emitting visible light.

[0212] Reference Figure 20A The description describes glasses 1600 (smart glasses) according to an application example. A camera device 1602, such as a CMOS sensor or SPAD, is disposed on the surface side of the lens 1601 of the glasses 1600. Additionally, a light-emitting device 100 according to this embodiment is disposed on the back side of the lens 1601.

[0213] The glasses 1600 also include a control device 1603. The control device 1603 functions as a power source supplying power to the imaging device 1602 and the light-emitting device 100 according to various embodiments. Furthermore, the control device 1603 controls the operation of the imaging device 1602 and the light-emitting device 100. An optical system configured to focus light onto the imaging device 1602 is formed on the lens 1601.

[0214] Reference Figure 20BThe description describes glasses 1610 (smart glasses) according to an application example. Glasses 1610 includes a control device 1612, on which a camera device corresponding to a camera device 1602 and a light-emitting device 100 are mounted. The camera device of the control device 1612 and an optical system configured to project light emitted from the light-emitting device 100 are formed in a lens 1611, and an image is projected onto the lens 1611. The control device 1612 functions as a power source supplying power to the camera device and the light-emitting device 100, and controls the operation of the camera device and the light-emitting device 100. The control device 1612 may include a gaze detection unit for detecting the wearer's gaze. Gaze detection can be performed using infrared light. An infrared emitting unit emits infrared light towards the eyeball of a user who is looking at the displayed image. The camera unit, including a light-receiving element, detects the reflected light from the eyeball of the emitted infrared light, thereby obtaining an image of the eyeball. A reduction unit is provided for reducing the light emitted from the infrared emitting unit to the display unit in a planar image, thereby reducing image quality degradation.

[0215] This method detects a user's gaze toward a displayed image from an image of the eye obtained by capturing infrared light. Any known method can be applied to gaze detection using images captured of the eye. As an example, a gaze detection method based on a Purkinje image obtained by reflecting light off the cornea can be used.

[0216] More specifically, gaze detection processing based on central pupillary corneal reflection is performed. Using central pupillary corneal reflection, a gaze vector representing the direction (rotation angle) of the eyeball is calculated based on the pupil image and Purkinje image included in the captured image of the eyeball, thereby detecting the user's gaze.

[0217] The light-emitting device 100 according to this embodiment of the present disclosure may include a camera device containing a light-receiving element, and control the display of images based on the gaze information of the user from the camera device.

[0218] More specifically, the light-emitting device 100 determines the first visual field area and the second visual field area (excluding the first visual field area) that the user is looking at based on gaze information. The first and second visual field areas can be determined by the control device of the light-emitting device 100, or they can be determined by an external control device. Within the display area of ​​the light-emitting device 100, the display resolution of the first visual field area can be controlled to be higher than that of the second visual field area. That is, the resolution of the second visual field area can be lower than that of the first visual field area.

[0219] Furthermore, the display area includes a first display area and a second display area different from the first display area, and a higher priority area is determined from the first and second display areas based on gaze information. The first and second display areas can be determined by the control device of the light-emitting device 100, or they can be determined by an external control device. The resolution of the higher priority area can be controlled to be higher than the resolution of the areas other than the higher priority area. That is, the resolution of the relatively low priority area can be low.

[0220] Note that AI can be used to determine the primary or higher priority visual field. The AI ​​can be a model configured to use images of the eye and the actual direction of the eye viewing those images as supervisory data to estimate the angle of the gaze and the distance to a target in front of the gaze. The AI ​​program can be maintained by a light-emitting device 100, a camera device, or an external device. If an external device maintains the AI ​​program, it is transmitted to the light-emitting device 100 via communication.

[0221] When display control is based on gaze detection, smart glasses that are also configured to capture external images can be used. The smart glasses can display the captured external information in real time.

[0222] According to this disclosure, there are techniques that can improve the display quality of light-emitting devices.

[0223] While this disclosure has been described with reference to embodiments, it should be understood that this disclosure is not limited to the disclosed embodiments. The scope of the appended claims should be given the broadest possible description to cover all such modifications and equivalent structures and functions.

Claims

1. A light-emitting device, comprising a first pixel and a second pixel, wherein, The first pixel and the second pixel each include a microlens disposed above the main surface of the substrate and a light-emitting element disposed between the main surface and the microlens. The light-emitting element includes a light-emitting layer. The brightness distribution in the light-emitting region of the first pixel's light-emitting layer is different from the brightness distribution in the light-emitting region of the second pixel's light-emitting layer. In each of the first pixel and the second pixel, the microlens is arranged in a position such that, when light passes through the microlens in the normal direction of the main surface and is incident toward the light-emitting layer, the area of ​​the incident region to which the light beam that has passed through the entire microlens in a plane parallel to the main surface and including the upper surface of the light-emitting layer is incident becomes larger than the area of ​​the light-emitting region.

2. The light-emitting device according to claim 1, wherein, In each of the first pixel and the second pixel, in a planar view, the entire outer edge of the light-emitting region is arranged inside the outer edge of the incident region.

3. The light-emitting device according to claim 1, wherein, The light-emitting device includes a plurality of pixels comprising the first pixel and the second pixel, and The first pixel and the second pixel are the closest pixels among the plurality of pixels that emit light of the same color.

4. The light-emitting device according to claim 1, wherein, In each of the first pixel and the second pixel, in a coordinate system where the direction from the first pixel to the second pixel is a first direction, the direction intersecting the first direction is a second direction, and the geometric centroid of the luminous region in the orthogonal projection of the main surface is the origin, the coordinate position of the first position with the highest brightness in the luminous region of the first pixel is different from the coordinate position of the second position with the highest brightness in the luminous region of the second pixel.

5. The light-emitting device according to claim 4, wherein, In the coordinate system, the first position and the second position are at least 0.2 μm apart.

6. The light-emitting device according to claim 4, wherein, In the coordinate system, the first position and the second position are at least 0.5 μm apart.

7. The light-emitting device according to claim 1, wherein, The brightness at the geometric centroid of the luminous region of the first pixel in the orthographic projection of the main surface is different from the brightness at the geometric centroid of the luminous region of the second pixel in the orthographic projection of the main surface.

8. The light-emitting device according to claim 1, wherein, The brightness at the geometric centroid of the luminous region of the first pixel in the orthographic projection of the main surface differs from the brightness at the geometric centroid of the luminous region of the second pixel in the orthographic projection of the main surface by no less than 2%.

9. The light-emitting device according to claim 1, wherein, The brightness at the geometric centroid of the luminous region of the first pixel in the orthographic projection of the main surface differs from the brightness at the geometric centroid of the luminous region of the second pixel in the orthographic projection of the main surface by no less than 5%.

10. The light-emitting device according to claim 1, wherein, The brightness at the geometric centroid of the luminous region of the first pixel in the orthographic projection of the main surface differs from the brightness at the geometric centroid of the luminous region of the second pixel in the orthographic projection of the main surface by no less than 10%.

11. The light-emitting device according to claim 1, wherein, In the orthographic projection onto the main surface, the luminous region of the first pixel has multiple brightness peak positions.

12. The light-emitting device according to claim 1, wherein, The light-emitting element includes a lower electrode disposed between the light-emitting layer and the main surface, and The lower electrode includes a conductive layer and an oxide layer covering the conductive layer.

13. The light-emitting device according to claim 1, wherein, The light-emitting element includes a lower electrode disposed between the light-emitting layer and the main surface, and The lower electrode has an in-plane distribution of reflectivity for light emitted from the light-emitting region.

14. The light-emitting device according to claim 1, wherein, The light-emitting element includes a lower electrode disposed between the light-emitting layer and the main surface, a reflective layer disposed between the lower electrode and the main surface, and an insulating layer disposed between the lower electrode and the reflective layer.

15. A display device, comprising: The light-emitting device according to any one of claims 1 to 14; as well as A control circuit is connected to the light-emitting device.

16. A photoelectric conversion device, comprising: An optical unit, which includes multiple lenses; An image sensor configured to receive light that has passed through the optical unit; as well as The monitor is configured to display images. The display includes a light-emitting device according to any one of claims 1 to 14.

17. An electronic device comprising: The housing is equipped with a display screen; as well as A communication unit, disposed within the housing and configured for external communication. The display includes a light-emitting device according to any one of claims 1 to 14.

18. A lighting device, comprising: light source; as well as At least one of the following: a light diffusion unit and an optical film. The light source includes a light-emitting device according to any one of claims 1 to 14.

19. A mobile body, comprising: main body; as well as A display disposed in the main body The display includes a light-emitting device according to any one of claims 1 to 14.

20. A wearable device, comprising: A display device configured to display images. The display device includes a light-emitting device according to any one of claims 1 to 14.

Images