Device and method for mitigating diffraction effects of electronic device having plurality of optoelectronic components

Abstract

The present disclosure relates to electronic devices having a display panel and a plurality of optoelectronic components, and in particular to mechanisms for mitigating diffraction effects when light is exchanged by such optoelectronic components through at least one transmissive region of the display panel. The display panel may be one of and include a layered semiconductor device that, in some non-limiting examples, may be an optoelectronic device having a plurality of (sub) pixel emission regions, each (sub) pixel emission region including a first electrode and a second electrode separated by at least one semiconductive layer.

Description

[0001] Related applications This application claims priority to U.S. Provisional Patent Application No. 63 / 578,758, filed August 25, 2023, the entire contents of which are incorporated herein by reference. Technical Field

[0002] This disclosure relates to electronic devices having a display panel and a plurality of optoelectronic components, and particularly to mechanisms for mitigating diffraction effects when light is exchanged by such optoelectronic components through at least one transmissive region of the display panel. The display panel may be one of the following: being and including a layered semiconductor device, which, in some non-limiting examples, may be an optoelectronic device having a plurality of (sub)pixel emission regions, each (sub)pixel emission region including a first electrode and a second electrode separated by at least one semiconductive layer. Background Technology

[0003] In optoelectronic devices such as organic light-emitting diodes (OLEDs), at least one semiconductive layer, including an emitting layer, may be disposed between a pair of electrodes (such as an anode and a cathode). The anode and cathode may be electrically coupled to a power source and generate holes and electrons, respectively, which migrate toward each other through the at least one semiconductive layer. When a pair of holes and electrons combine, the emitting layer may emit light in the form of photons.

[0004] OLED display panels (such as active-matrix OLED (AMOLED) panels) may include multiple pixels, each pixel further including multiple (including but not limited to one of three and four) sub-pixels. In some non-limiting examples, the various sub-pixels of a pixel may be characterized by at least one of three and four different colors (including but not limited to R (red), G (green), and B (blue)). Each (sub)pixel may have an associated emission region comprising an associated pair of electrodes and a stack of at least one semiconductive layer between these electrodes. In some non-limiting examples, each sub-pixel of a pixel may emit light, including but not limited to photons, having an associated wavelength spectrum characterized by a given color (including but not limited to one of R (red), G (green), B (blue), and W (white)). In some non-limiting examples, the (sub)pixels may be selectively driven by driving circuitry including at least one thin-film transistor (TFT) structure electrically coupled to conductive metal lines within a substrate, and in some non-limiting examples, electrodes and at least one semiconductive layer are deposited on the substrate. In some non-limiting examples, various coatings (layers) of such panels may be formed by a vacuum-based deposition process.

[0005] In an AMOLED panel, a sub-pixel emits light when a voltage is applied between its anode and cathode. The emission of light from each sub-pixel can be controlled by controlling the voltage applied between the anode and cathode. In cases where a common cathode is provided across multiple sub-pixels, the voltage across the anode and cathode in each sub-pixel can be controlled by adjusting the voltage of the anode. In some non-limiting examples, adjacent anodes may be spaced apart laterally, and at least one non-emitting region may be provided between them.

[0006] In some non-limiting examples, such a panel may be housed in an electronic device, including but not limited to mobile user equipment such as a smartphone. In some non-limiting examples, such an electronic device may include optoelectronic components that perform at least one of the following operations: emitting and receiving light, including but not limited to a camera for capturing images of light emitted from outside the electronic device.

[0007] In some non-limiting examples, such a user device may include a mechanism for biometric authentication of a user before granting access to the user device. This mechanism may involve a facial identification system in which a grid of dots of infrared (IR) light is projected onto the surface of the user's face, including but not limited to grid projection via an IR emitter (such as a dot projector). The system captures an image of the projected dots on the surface, including but not limited to via an IR camera, and generates a map from it. The generated map can be compared to a reference map, and if sufficient correspondence exists between them, the user device can be unlocked, thereby allowing the user access to its hardware and associated software. In some non-limiting examples, the facial identification system may include a floodlight illuminator for illuminating IR light onto the surface of the user's face.

[0008] In some non-limiting examples, at least one optoelectronic component (including, but not limited to, a camera) and at least one component of the facial recognition system (including, but not limited to, at least one of a dot projector, a floodlight illuminator, and an IR camera) may be positioned such that light emitted and captured by such at least one optoelectronic component does not increasingly pass through the panel. There may be a target for housing such optoelectronic component within the user equipment and under the display panel, such that light emitted and captured by such at least one optoelectronic component passes through the panel.

[0009] In some non-limiting examples, at least a portion of the panel may be made to be substantially transparent and allow light (including, but not limited to, at least one light spot) to pass through it while still being able to emit light from it. In some non-limiting examples, the panel may include at least one transmissive region located within at least one non-emissive region extending between (sub)pixel emitting regions.

[0010] In some non-limiting examples, there may be at least one constraint on at least one of the number, location, size, and configuration of at least one (sub)pixel emission region.

[0011] In some non-limiting examples, increasing the aperture ratio of at least one transmission region (towards the panel (or its portion)) relative to the aperture ratio of at least one (sub)pixel emission region (towards the corresponding panel (or its corresponding portion)) can facilitate light transmission through the panel.

[0012] In some non-limiting examples, this increase may affect the ability to ensure at least one of the following: ensure a minimum area of ​​the panel dedicated to light-emitting (sub)pixels, and maintain a minimum pixel density of the panel (including, but not limited to, as measured in pixels per inch (ppi)).

[0013] In some non-limiting examples, this increase may affect the ability to arrange at least one transmissive region within at least one (sub)pixel emission region, such that at least one of the panel and its (sub)pixel layout may appear substantially uniform to its user.

[0014] In some applications, at least one of the optoelectronic components (including, but not limited to, a dot projector and an (IR) camera) is positioned under the panel, and light (including, but not limited to, light corresponding to a point) (which is either projected onto or reflected from the face surface) passes at least partially through at least one transmission area.

[0015] Because, in addition to at least one transmissive region, the panel includes at least one of the following: substantially non-transmissive regions and regions with significantly reduced transmittance, including but not limited to portions of at least one emitting and non-emitting region, light exchanged by components under the display through the panel may be diffracted due to passing through the transmissive regions. This may result in at least one of the following: distortion of the transmitted light, redistribution of light energy across the expanded region, and interference thereto. In some non-limiting examples, diffraction may affect the ability to distinguish individual features, resulting in at least one of the following: mixing and loss of information (including but not limited to high-frequency information and phase information), which in some non-limiting examples may be difficult to compensate for and thus prevent a certain function of the user equipment from being performed correctly.

[0016] In some non-limiting examples, there may be a goal of providing a mechanism to mitigate this diffraction effect. Attached Figure Description

[0017] Examples of this disclosure will now be described with reference to the following figures, wherein the same reference numerals in the different figures indicate at least one of the following: the same elements and, in some non-limiting examples, similar elements and corresponding elements, and wherein: Figure 1 This is a schematic diagram illustrating an example cross-sectional view of an example user equipment according to an example of the present disclosure, the example user equipment including a body, a display panel having multiple layers and at least one under-display component within the device, the multiple layers including at least one hole through which at least one electromagnetic signal can be exchanged; Figure 2A Examples according to this disclosure are shown. Figure 1 An example fragment of at least one display portion of the display panel; Figure 2B and Figure 2C Various example segments of a signal exchange portion including at least one transmission region, according to examples in this disclosure, are shown; Figures 3A to 3B and Figures 3C to 3D It is a corresponding stacked set of example cross-sectional views illustrating a segment of the signal exchange portion of a display panel according to the example in this disclosure, respectively in plan view and cross-sectional view, showing a hole in the transmission area, the boundary of which is defined by the intersection of the boundary of the first layer of holes and the boundary of the second layer of holes; Figure 4A and Figure 4B This is an example schematic diagram illustrating an optical system according to an example in this disclosure; Figure 5A An experimental setup according to an example in this disclosure is schematically shown, in which a point source is viewed by a receiver via a display panel; Figure 5B Examples of this disclosure are shown. Figure 5A The image recorded by the receiver; Figure 5C The following example illustrates how spatial positioning varies according to the present disclosure. Figure 5A The normalized intensity profile of the recorded diffraction pattern, and the intensity profile of the theoretical PSF of the point source without considering the beam distribution, and for... Figure 5A The experimental setup was used to calculate the intensity profile of the simulated PSF, taking into account the beam distribution. Figure 5D The following is a reflection based on the example in this disclosure. Figure 5C The example shown is a simulated image of a simulated PSF; Figure 6A This is a floor plan of a user device including a display panel, based on the examples in this disclosure; Figure 6B Examples according to this disclosure are shown. Figure 6A A cross-sectional view of the display panel; Figures 7A to 7B These are schematic diagrams showing the distribution and intensity maps of the first PSF according to the examples in this disclosure. Figures 7C to 7D These are schematic diagrams showing the distribution and intensity maps of the second PSF according to the examples in this disclosure, and Figures 7E to 7F These are schematic diagrams showing the distribution of a first PSF superimposed on the distribution of a second PSF and the intensity map of the first PSF superimposed on the intensity map of the second PSF, respectively, according to examples in this disclosure. Figures 8A to 8B These are schematic diagrams showing the distribution and intensity maps of the first PSF according to the examples in this disclosure. Figures 8C to 8D These are schematic diagrams showing the distribution and intensity maps of the second PSF according to the examples in this disclosure, and Figures 8E to 8F These are schematic diagrams showing the distribution of a first PSF superimposed on the distribution of a second PSF and the intensity map of the first PSF superimposed on the intensity map of the second PSF, respectively, according to examples in this disclosure. Figures 9A to 9B These are schematic diagrams showing the distribution and intensity maps of the first PSF according to the examples in this disclosure. Figures 9C to 9D These are schematic diagrams showing the distribution and intensity maps of the second PSF according to the examples in this disclosure, and Figures 9E to 9F These are schematic diagrams showing the distribution of a first PSF superimposed on the distribution of a second PSF and the intensity map of the first PSF superimposed on the intensity map of the second PSF, respectively, according to examples in this disclosure. Figures 10A to 10B These are schematic diagrams showing the distribution and intensity maps of the first PSF according to the examples in this disclosure. Figures 10C to 10D These are schematic diagrams showing the distribution and intensity maps of the second PSF according to the examples in this disclosure, and Figures 10E to 10F These are schematic diagrams showing the distribution of a first PSF superimposed on the distribution of a second PSF and the intensity map of the first PSF superimposed on the intensity map of the second PSF, respectively, according to examples in this disclosure. Figures 11A to 11E This is a schematic diagram showing at least a segment of various example signal exchange portions of the display panel of FIG6 according to the example in this disclosure; Figures 12A to 12B A plan view illustrating an example according to this disclosure Figure 1 Fragments of various example signal exchange sections of the display panel; Figure 13 A plan view illustrating an example according to this disclosure Figure 1 Fragments of various example signal exchange sections of the display panel; Figure 14 A plan view illustrating an example according to this disclosure Figure 1 Fragments of various example signal exchange sections of the display panel; Figure 15 A plan view illustrating an example according to this disclosure Figure 1 Fragments of various example signal exchange sections of the display panel; Figures 16A to 16JJ The present invention is a schematic diagram showing a series of example specimens according to the examples in this disclosure, each example specimen including different layouts of multiple transmission regions; Figure 17 Examples of this disclosure are shown. Figure 5A The experimental setup was based on images recorded for each of the example specimens A1-F6; Figure 18A The plan view illustrates the example based on the present disclosure. Figure 17 The recorded images reproduce the distribution of PSF of samples A3 and A5 and the interaction between them. Figure 18B The plan view illustrates the example based on the present disclosure. Figure 17 The recorded images reproduce the distribution of PSF of sample E2 and sample E4 and the interaction between them. Figure 18C The plan view illustrates the example based on the present disclosure. Figure 17 The recorded images reproduce the distribution of PSF of sample specimens F3 and F4 and the interaction between them. Figure 18D The plan view illustrates the example based on the present disclosure. Figure 17 The recorded images reproduce the distribution of PSF of sample specimens D4 and E6 and the interaction between them. Figure 19 The examples in this disclosure are illustrated by sectional views. Figure 1 A schematic diagram of an example type of device; Figure 20 This is a flowchart illustrating the method actions according to the examples in this disclosure; Figure 21 The following is a simplified block diagram of an example device in the longitudinal orientation according to the example in this disclosure, which has multiple layers in the lateral orientation, the layers being formed by selectively depositing a patterned coating in a first portion of the lateral orientation and subsequently depositing a closed coating of deposited material in a second portion thereof; Figure 22 Based on the examples in this disclosure Figure 21A simplified diagram of an example type of device viewed longitudinally, in which a closed coating of deposited material in the second part forms the second electrode of the optoelectronic device; Figure 23 This illustrates an example of a method for use in accordance with this disclosure. Figure 22 A schematic diagram illustrating an example process of depositing a patterned coating on the exposed surface of the lower layer in an example type of device; Figure 24 This illustrates an example of a method for including [examples of methods described in this disclosure]. Figure 23 A schematic diagram of an example process of depositing deposition material in the second part of the exposed layer surface of a patterned coating, wherein the patterned coating is a nucleation inhibition coating (NIC). Figure 25A The examples in this disclosure are illustrated by sectional views. Figure 22 A schematic diagram of an example type of device; Figure 25B Therefore, supplementary floor plan illustrations are provided based on the examples in this disclosure. Figure 25A A schematic diagram of the device; Figures 26A to 26B This is a schematic diagram illustrating various potential behaviors of a patterned coating according to various examples of the present disclosure, the patterned coating being located in Figure 22 The deposition interface between the device and the deposited layer in an example type; Figures 27A to 27H Based on the examples in this disclosure Figure 22 The simplified block diagram of the device, viewed from the cross-section, illustrates various examples of possible interactions between the granular patterned coating and the granular structure. Figure 28 This is a schematic diagram illustrating an example according to the present disclosure. Figure 22 Example cross-sectional view of the device type, and additional example deposition steps; Figure 29 This is a schematic diagram illustrating an example stage of an example process for manufacturing an OLED device according to an example of an example type of example according to the examples in this disclosure, the example type having sub-pixel regions having a second electrode of another thickness; Figure 30 This is a schematic diagram illustrating an example cross-sectional view of an OLED device according to an example of the present disclosure, wherein the second electrode is coupled to the auxiliary electrode; Figure 31 This is a schematic diagram of an example cross-sectional view illustrating an example type of OLED device having separators and shielding areas (such as recesses) in its non-emitting region according to an example of the present disclosure; Figures 32A to 32BThis is a schematic diagram showing an example cross-sectional view of an example OLED device having separators and shielding areas (such as holes) in a non-emitting region according to various examples in this disclosure; Figure 33 This is an example energy profile illustrating the energy states of surface-adsorbed atoms adsorbed onto a surface according to an example in this disclosure; Figure 34 This is a schematic diagram illustrating the formation of a membrane core according to an example in this disclosure; and Figure 35 It is a block diagram of an example computer device within a computing and communication environment that can be used to implement devices and methods according to representative examples of this disclosure.

[0018] In this disclosure, an icon symbol appended with at least one of at least a numerical value (including, but not limited to, at least one of a superscript and a subscript) and at least one letter character (including, but not limited to, in lowercase) can be considered to refer to at least one specific instance and subset of the feature (element) described by the icon symbol. As indicated by the context, indexing an icon symbol without indexing at least one of the appended value and the character can generally refer to the feature described by the icon symbol and at least one of the set of all instances described by it. Similarly, an icon symbol can use the letter "x" to replace a number. As indicated by the context, indexing such an icon symbol can generally refer to the feature described by the icon symbol, wherein the character "x" is replaced by a number and the set of all instances described by it.

[0019] In this disclosure, specific details, including but not limited to particular architectures, interfaces, and techniques, are set forth for illustrative purposes and not for limitation in order to provide a thorough understanding of the disclosure. In some instances, detailed descriptions of well-known systems, technologies, components, devices, circuits, methods, and applications have been omitted to avoid unnecessary detail that could obscure the description of this disclosure.

[0020] Furthermore, it should be understood that the block diagrams reproduced herein may represent conceptual views of exemplary components embodying the principles of this technology.

[0021] Therefore, system and method components have been appropriately indicated in the accompanying drawings using conventional symbols, with only those specific details shown that are relevant to understanding the examples of this disclosure, so that this disclosure will not be obscured by details that are obvious to those skilled in the art who will benefit from the description herein.

[0022] Any of the accompanying drawings provided herein may not be drawn to scale and may not be considered as limiting this disclosure in any way.

[0023] Unless the context otherwise indicates, in some examples any feature shown by a dashed outline may be considered optional. Summary of the Invention

[0024] This disclosure discloses an electronic device, its display panel, and a method for operating the electronic device. The electronic device includes a display panel and a plurality of optoelectronic components. The display panel extends in a lateral orientation defined by a lateral axis and includes at least one signal exchange portion. The signal exchange portion includes a plurality of emission regions, each emission region corresponding to a (sub)pixel; and a plurality of transmission regions, each transmission region disposed in the lateral orientation between adjacent emission regions. A first optoelectronic component and a second optoelectronic component are each adapted to perform at least one of the following operations: emitting and receiving light in a wavelength spectrum located within at least one of the visible spectrum, the infrared (IR) spectrum, and the near-infrared (NIR) spectrum, and each optoelectronic component has a point spread function (PSF) associated therewith, the point spread function including a main lobe and at least one side lobe. The first optoelectronic component is arranged behind a first signal exchange portion of at least one signal exchange portion of the display panel, such that light emitted and received by the first optoelectronic component passes through at least one transmission region in the transmission region of the first signal exchange portion. The first PSF associated with the first optoelectronic component includes a component associated with the layout of at least one transmission region of the first signal exchange portion, and differs from the second PSF associated with the second optoelectronic component in at least one of the distribution and intensity of the main lobe and at least one side lobe.

[0025] According to a broad aspect, an electronic device is disclosed, comprising: a display panel extending in a lateral orientation defined by a lateral axis and including at least one signal exchange portion, the at least one signal exchange portion including: a plurality of emitting regions, each emitting region corresponding to a (sub)pixel; and a plurality of transmissive regions, each transmissive region disposed in the lateral orientation between adjacent emitting regions; a first optoelectronic component and a second optoelectronic component, each optoelectronic component being adapted to perform at least one of the following operations: emitting and receiving light in a wavelength spectrum located in at least one of the visible spectrum, the infrared (IR) spectrum, and the near-infrared (NIR) spectrum, and each optoelectronic component having There is an associated point spread function (PSF) comprising a main lobe and at least one side lobe; wherein: a first optoelectronic component is disposed behind a first signal exchange portion of at least one signal exchange portion of the display panel, such that light emitted or received by at least one of the first optoelectronic component passes through at least one transmission region of the first signal exchange portion; and the first PSF associated with the first optoelectronic component includes a component associated with the layout of at least one transmission region of the first signal exchange portion, and differs from the second PSF associated with the second optoelectronic component in at least one of the distribution and intensity of the main lobe and at least one side lobe.

[0026] In some non-limiting examples, the sidelobe pattern of the first PSF may have substantially no sidelobes that overlap with the sidelobe pattern of the second PSF.

[0027] In some non-limiting examples, the sidelobe pattern of the first PSF may at least partially overlap with the sidelobe pattern of the second PSF.

[0028] In some non-limiting examples, a first subset of at least one sidelobe of the first PSF may at least partially overlap with one of the entirety and subset of the sidelobes of the second PSF.

[0029] In some non-limiting examples, a second subset of at least one sidelobe of the first PSF may substantially have no sidelobes overlapping with any sidelobe of the second PSF.

[0030] In some non-limiting examples, each sidelobe of one of the first PSF and the second PSF may correspond to and at least partially overlap with the sidelobe of the other of the first PSF and the second PSF.

[0031] In some non-limiting examples, the overlap between the sidelobe patterns of the first PSF and the sidelobe patterns of the second PSF may be no more than one of about 60%, 50%, 40%, 30%, 20%, 25%, 20%, 10%, and 5%.

[0032] In some non-limiting examples, the intensity of at least one sidelobe of the first PSF may differ from the intensity of at least one sidelobe of the second PSF in at least one of the profile and intensity level.

[0033] In some non-limiting examples, the main lobe of the first PSF may at least partially overlap with the side lobes of the second PSF.

[0034] In some non-restrictive examples, the distribution of the main lobe of the first PSF may differ from that of the main lobe of the second PSF.

[0035] In some non-limiting examples, the main lobe of the first PSF may differ from the main lobe of the second PSF in at least one of its profile and intensity level.

[0036] In some non-limiting examples, the layout of at least one transmission region of at least one signal exchange section may be characterized by at least one of its size, shape, orientation, and pitch.

[0037] In some non-limiting examples, the second optoelectronic component may be arranged behind the second signal exchange portion in at least one signal exchange portion, such that light that is transmitted and received by the second optoelectronic component can pass through at least one transmission region of the transmission region of the second signal exchange portion, and the second PSF may include a component associated with the layout of at least one transmission region of the second signal exchange portion, the layout of which differs from the layout of at least one transmission region of the first signal exchange portion in at least one of its size, shape, orientation and pitch.

[0038] In some non-limiting examples, the first optoelectronic component and the second optoelectronic component may be spaced apart in the lateral orientation of the display panel.

[0039] In some non-limiting examples, the first optoelectronic component and the second optoelectronic component may be substantially located at at least one of the following: the end of the display panel, its center, and the center of one of the sides and ends of the display panel.

[0040] In some non-limiting examples, the second optoelectronic component may be arranged in a portion of the device that is substantially without a display panel (sub)pixel.

[0041] In some non-limiting examples, at least one of the first optoelectronic component and the second optoelectronic component may include at least one of the following: a transmitter adapted to emit light and a receiver adapted to receive light.

[0042] In some non-limiting examples, the second optoelectronic component may be a component not displayed under a display.

[0043] In some non-limiting examples, the second optoelectronic component may be a transmitter.

[0044] In some non-limiting examples, the first optoelectronic component may be a camera under the display.

[0045] In some non-limiting examples, at least a portion of at least one transmission region of at least one of the first signal exchange portion and the second signal exchange portion may have a patterned coating deposited thereon, the patterned coating being adapted to influence the tendency of the evaporation flux of the deposited material to be deposited thereon.

[0046] In some non-limiting examples, at least one transmission region may include a first portion having a first transmittance and a second portion having a second transmittance, the transmittance being at least equal to the second transmittance.

[0047] In some non-limiting examples, the patterned coating may be deposited at least in the first part.

[0048] In some non-limiting examples, a first optoelectronic component may be adapted to generate a first output containing diffraction information associated with a first PSF, a second optoelectronic component may be adapted to generate a second output containing diffraction information associated with a second PSF, and the device may include a processor adapted to process the first and second outputs to produce a processed output.

[0049] In some non-limiting examples, the processor may be adapted to apply corrections to the first and second outputs to generate a first corrected output and a second corrected output.

[0050] In some non-limiting examples, correction may include diffraction correction.

[0051] In some non-limiting examples, diffraction correction may be performed using the PSF of one of the first optoelectronic component and the second optoelectronic component to correct diffraction contained in the output of the other of the first optoelectronic component and the second optoelectronic component.

[0052] In some non-limiting examples, the processor may be adapted to produce the output of the processing by combining the first correction output and the second correction output.

[0053] In some non-limiting examples, the output of the processing can be displayed on a display panel.

[0054] In some non-limiting examples, the output of the processing may include at least one of the following: image files, video files, 3D images, and 3D videos.

[0055] According to a broad aspect, a display panel is disclosed, the display panel comprising: a display portion including a plurality of emission regions, a first signal exchange portion and a second signal exchange portion, each signal exchange portion including: a plurality of emission regions, each emission region corresponding to a (sub)pixel; and a plurality of transmission regions allowing light in a wavelength spectrum located within at least one of the visible spectrum, the infrared (IR) spectrum and the near-infrared (NIR) spectrum to pass through therethrough, each transmission region being disposed between adjacent emission regions in a lateral orientation of the display panel, wherein: each of the first signal exchange portion and the second signal exchange portion has a point spread function (PSF) associated therewith, the point spread function including a main lobe and at least one side lobe, the layout of the transmission regions of the first signal exchange portion differs from the layout of the transmission regions of the second signal exchange portion, such that the first PSF associated with the first signal exchange portion differs from the second PSF associated with the second signal exchange portion in at least one of the distribution and intensity of the main lobe and at least one side lobe.

[0056] In some non-limiting examples, the sidelobe pattern of the first PSF may have substantially no sidelobes that overlap with the sidelobe pattern of the second PSF.

[0057] In some non-limiting examples, the sidelobe pattern of the first PSF may at least partially overlap with the sidelobe pattern of the second PSF.

[0058] In some non-limiting examples, a first subset of at least one sidelobe of the first PSF may at least partially overlap with one of the entirety and subset of the sidelobes of the second PSF.

[0059] In some non-limiting examples, a second subset of at least one sidelobe of the first PSF may substantially have no sidelobes overlapping with any sidelobe of the second PSF.

[0060] In some non-limiting examples, each sidelobe of one of the first PSF and the second PSF may correspond to and at least partially overlap with the sidelobe of the other of the first PSF and the second PSF.

[0061] In some non-limiting examples, the overlap between the sidelobe patterns of the first PSF and the sidelobe patterns of the second PSF may be no more than one of about 60%, 50%, 40%, 30%, 20%, 25%, 20%, 10%, and 5%.

[0062] In some non-limiting examples, the intensity of at least one sidelobe of the first PSF may differ from the intensity of at least one sidelobe of the second PSF in at least one of the profile and intensity level.

[0063] In some non-limiting examples, the main lobe of the first PSF may at least partially overlap with the side lobes of the second PSF.

[0064] In some non-restrictive examples, the distribution of the main lobe of the first PSF may differ from that of the main lobe of the second PSF.

[0065] In some non-limiting examples, the main lobe of the first PSF may differ from the main lobe of the second PSF in at least one of its profile and intensity level.

[0066] In some non-limiting examples, the layout of the transmission region of each signal exchange section can be characterized by at least one of its size, shape, orientation, and pitch.

[0067] In some non-limiting examples, at least a portion of at least one transmission region of at least one of the first signal exchange portion and the second signal exchange portion may have a patterned coating deposited thereon, the patterned coating being adapted to influence the tendency of the evaporation flux of the deposited material to be deposited thereon.

[0068] In some non-limiting examples, at least one transmission region may include a first portion having a first transmittance and a second portion having a second transmittance, wherein the first transmittance is at least equal to the second transmittance.

[0069] In some non-limiting examples, the patterned coating may be deposited at least in the first part.

[0070] According to a broad aspect, a method for operating an electronic device is disclosed, the electronic device including a display panel and a first optoelectronic component and a second optoelectronic component, each optoelectronic component being adapted to perform at least one of the following operations: emitting and receiving light in a wavelength spectrum located in at least one of the visible spectrum, infrared (IR) spectrum, and near-infrared (NIR) spectrum, and generating an output containing diffraction information associated with its point spread function (PSF), wherein: the first optoelectronic component is arranged behind a first signal exchange portion including a plurality of transmission regions of the display panel, such that the first PSF associated with the first optoelectronic component includes a component associated with the layout of the transmission regions of the first signal exchange portion, and is different from the second PSF associated with the second optoelectronic component, the method comprising the action of processing the first output and the second output of the optoelectronic component to produce a processed output.

[0071] In some non-limiting examples, the second optoelectronic component may be arranged behind the second signal exchange portion, which includes a plurality of transmissive regions of the display panel, such that the second PSF associated with the second optoelectronic component may include a component associated with the layout of the transmissive regions of the second signal exchange portion.

[0072] In some non-limiting examples, the processing action may include using the PSF of one of the first optoelectronic component and the second optoelectronic component to process the output of the other of the first optoelectronic component and the second optoelectronic component.

[0073] In some non-limiting examples, the processing action may include the action of correcting the first output and the second output to generate a first corrected output and a second corrected output.

[0074] In some non-limiting examples, the correction action may include diffraction correction.

[0075] In some non-limiting examples, diffraction correction may be performed using the PSF of one of the first optoelectronic component and the second optoelectronic component to correct diffraction contained in the output of the other of the first optoelectronic component and the second optoelectronic component.

[0076] In some non-restrictive examples, the correction action can be performed individually for each of the first and second outputs.

[0077] In some non-limiting examples, the correction action can be performed by cross-referencing the first output with the second output.

[0078] In some non-limiting examples, the processing action may include combining the first and second corrected outputs to generate a combined output.

[0079] In some non-limiting examples, the combination action may include combining the first and second correction outputs through at least one of the fusion and splicing processes.

[0080] In some non-restrictive examples, the correction action may precede the action of preprocessing the first and second outputs.

[0081] In some non-restrictive examples, the combined action can be followed by a post-processing combined output action.

[0082] In some non-limiting examples, the method may include the action of displaying the processed output on a display panel.

[0083] In some non-limiting examples, the output of the processing may include at least one of the following: image files, video files, 3D images, and 3D videos.

[0084] In some non-limiting examples, at least one of the first optoelectronic component and the second optoelectronic component may include at least one of the following: a transmitter adapted to emit light and a receiver adapted to receive light.

[0085] In some non-limiting examples, the second optoelectronic component may be a component not displayed under a display.

[0086] In some non-limiting examples, the second optoelectronic component may be a transmitter.

[0087] In some non-limiting examples, the first optoelectronic component may be a camera under the display. Detailed Implementation

[0088] Display panels and user equipment Now go to Figure 1 The image shows a cross-sectional view of an example layered optoelectronic device in the form of a display panel 100. In some non-limiting examples, the display panel 100 may include multiple layers deposited on a substrate 10, which terminate at the outermost layer forming the surface 101 of the display panel.

[0089] A lateral axis, labeled X-axis, may be shown together with a longitudinal axis, labeled Z-axis. A second lateral axis, labeled Y-axis, may be shown substantially transverse to both the X-axis and Z-axis. At least one of the lateral axes may define the lateral orientation of the device. A longitudinal axis may define the longitudinal orientation of the device.

[0090] The surface 101 of the display panel 100 may extend substantially along a plane defined by a lateral axis across its lateral orientation.

[0091] In some non-limiting examples, surface 101, and indeed the entire display panel 100, may serve as the surface of the electronics 110, through which at least one EM signal 131 may be exchanged at a non-zero angle relative to the plane of surface 101. In some non-limiting examples, the electronics 110 may be user equipment 110, including but not limited to computing devices 110, including but not limited to smartphones, tablets, laptops, e-readers, and some other electronics 110 such as monitors, televisions, and smart devices 110, including but not limited to automotive displays, windshields, home appliances, wearable devices, and medical, commercial, and industrial equipment 110.

[0092] In some non-limiting examples, electronic device 110 may include at least one optoelectronic component 130, which performs at least one of the following operations: emitting and receiving light. In some non-limiting examples, at least one optoelectronic component 130 may include a subdisplay unit (UDC) 130 disposed under display panel 100. u .although Figure 1 Not shown, but in some non-limiting examples, at least one optoelectronic component 130 may include a non-display under-display component 130. n including but not limited to perforated component 130 n The non-display under-display component performs at least one of the following operations: emitting and receiving light that does not pass through the display panel 100. In some non-limiting examples, the non-display under-display component 130 n It can be positioned in a non-display portion (not shown) of the display panel 100, which in some non-limiting examples may have essentially no emission area 210 (FIG. 2). In some non-limiting examples, the non-display portion may be in the form of, but is not limited to, cutouts, notches, and borders.

[0093] In some non-limiting examples, surface 101 may correspond to, and in some non-limiting examples match, at least one of body 120 and opening 121 therein, at least one display lower component 130. u It can be accommodated within the opening.

[0094] In some non-limiting examples, at least one display under-display component 130 u It may be formed on the surface of the display panel 100 opposite to the surface 101, including but not limited to at least one of the following: integrally formed, and formed as an assembly module.

[0095] In some non-limiting examples, at least one hole 122 may be formed in the display panel 100 to allow the hole to pass through the surface 101 of the display panel 100 at a non-zero angle to the plane defined by the lateral axis (including, but not limited to, the accompanying layers of the display panel 100, including, but not limited to, the surface 101 of the display panel 100) and at least one lower display component 130. u Exchange at least one EM signal 131.

[0096] In some non-limiting examples, at least one aperture 122 can be understood to include the absence or reduction of at least one of the following: a substantially opaque area / coating 305 (FIG. 3) originally disposed across the display panel 100 and an area / coating with significantly reduced transmittance; or the thickness and coverage of such an area / coating. In some non-limiting examples, at least one aperture 122 may be embodied as a signal transmission region 112 as described herein. In some non-limiting examples, the boundary of the transmission region 112 may be defined by the aperture 122.

[0097] However, at least one aperture 122 is provided, through which at least one EM signal 131 can pass, allowing it to cross surface 101. Therefore, at least one EM signal 131 can be considered to exclude any EM radiation that can extend along a plane defined by a lateral axis, including but not limited to that that can cross at least one particle structure 2150. Figure 21 Any current conducted laterally through the display panel 100.

[0098] Furthermore, those skilled in the art will understand that at least one EM signal 131 can be distinguished from the EM radiation itself, including but not limited to one of the current and electric field generated therefrom, because at least one EM signal 131 can convey some information content (including but not limited to an identifier by which at least one EM signal 131 can be distinguished from other EM signals 131) in either a standalone manner or in combination with other EM signals 131. In some non-limiting examples, the information content can be conveyed by at least one of the following operations: specifying, changing, and adjusting at least one of the wavelength, frequency, phase, timing, bandwidth, intensity, time of flight, spatial positioning, and other characteristics of at least one EM signal 131.

[0099] In some non-limiting examples, at least one EM signal 131 exchanged with at least one optoelectronic component 130 (including, but not limited to, at least one aperture 122 (not) passing through the display panel 100) may include at least one photon, and in some non-limiting examples may have a wavelength spectrum that is non-limitingly located within at least one of the visible spectrum, the IR spectrum, and the NIR spectrum. In some non-limiting examples, at least one EM signal 131 may have a wavelength that is non-limitingly located within at least one of the IR spectrum and the NIR spectrum.

[0100] In some non-limiting examples, at least one EM signal 131 may include ambient light incident thereon.

[0101] In some non-limiting examples, at least one EM signal 131 exchanged through at least one hole 122 of the display panel 100 may be transmitted by at least one lower display component 130. u Perform at least one of the sending and receiving operations.

[0102] In some non-limiting examples, at least one display under-display component 130 u It may have the size of at least a single transmissive region 112, but may be located not only below multiple of them, but also below at least one emitting region 210 extending between them. In some non-limiting examples, at least one display lower component 130 may have the size of at least a single hole in at least one aperture 122.

[0103] In some non-limiting examples, at least one optoelectronic component 130 may include a receiver 130. r The receiver is adapted to receive and process at least one received EM signal 131 r In some non-limiting examples, this receiver 130 r It may include cameras, including but not limited to under-display cameras (UDC), including but not limited to IR cameras; and detectors, including but not limited to IR sensors / detectors, NIR sensors / detectors, LIDAR sensing modules, fingerprint sensing modules, optical sensing modules, IR (proximity) sensing modules, iris recognition sensing modules and facial recognition systems, including but not limited to a portion thereof.

[0104] In some non-limiting examples, at least one optoelectronic component 130 may include a transmitter 130. t The transmitter is adapted to transmit at least one transmitted EM signal 131 t In some non-limiting examples, this transmitter 130 t It may include light sources, including but not limited to built-in flashlights, flashlights, IR transmitters, NIR transmitters, LIDAR sensing modules, fingerprint sensing modules, optical sensing modules, IR proximity sensing modules, iris recognition sensing modules, and facial recognition systems, including but not limited to a portion thereof, including but not limited to at least one of dot projectors and floodlights.

[0105] In some non-limiting examples, at least one received EM signal 131 r It may include at least one transmitted EM signal 131 tAt least one segment of the device, wherein the at least one segment is in one of the following situations: reflected from a surface located outside the user equipment 10 (including but not limited to that of the user 110) and otherwise returned by the surface.

[0106] In some non-limiting examples, at least one EM signal 131 (including but not limited to signals transmitted through at least one hole 122 of the display panel 100 outside the user equipment 110) passes through at least one hole 122 of the display panel 100. t At least one display lower component 130 u The transmitted EM signals 131 t The EM signal 131 can be emitted from and received by the display panel 100. r Transmission is transmitted back to a receiver 130 via at least one hole 122 in the display panel 100. r At least one display lower component 130 u .

[0107] In some non-limiting examples, the lower part of the display 130 u It may include an IR transmitter and an IR sensor. In some non-limiting examples, this display under-part 130 u It may include at least one of the following as a part, component, or module: a dot projector, a time-of-flight (ToF) sensor module (which may operate as a direct ToF or indirect ToF sensor), a vertical-cavity surface-emitting laser (VCSEL), a flood illuminator, a NIR imager, folded optics, and a diffraction grating.

[0108] In some non-limiting examples, multiple under-display components 130 may exist within user equipment 110. u The first display under-display component among the plurality of display under-display components may include a transmitter 130. t Used to transmit at least one transmitted EM signal 131 t To pass through at least one hole 122 outside of the user equipment 110, and the second under-display component of the plurality of under-display components may include a receiver 130. r , for receiving at least one received EM signal 131 r In some non-limiting examples, this transmitter 130 t and receiver 130 r It can be embodied in component 130 under a single display.

[0109] Signal switching section and display section In some non-limiting examples, the display panel 100 may include at least one signal exchange section 103 and at least one display section 107.

[0110] In some non-limiting examples, at least one display portion 107 may include a plurality of emitting regions 210, which, in some non-limiting examples, are arranged in a lateral pattern. In some non-limiting examples, the emitting regions 210 in at least one display portion 107 may correspond to (sub)pixels 215 / 216 of the display panel 100 (FIG. 2). In some non-limiting examples, at least one non-emitting region 1911 ( Figure 19 Each of the emission regions 210 can be adjacent to each emission region 210, such that each emission region 210 can be effectively surrounded by the non-emission region 1911.

[0111] In some non-limiting examples, at least one signal exchange portion 103 may include at least one emitting region 210 and at least one signal transmission region 112. In some non-limiting examples, at least one emitting region 210 in at least one signal exchange portion 103 may correspond to (sub)pixels 215 / 216 of display panel 100, and in some non-limiting examples, may be arranged in a lateral pattern that is generally similar to (but not limited to) that in at least one display portion 107.

[0112] In this disclosure, the term "transmission area" refers to a region of the display panel 100, including but not limited to at least one transmission area 112 in at least one signal exchange portion 103 therein, which may be configured to allow a larger portion of the EM radiation incident on the display panel 100 to be transmitted through it, compared to at least another region of the display panel 100 that is not a transmission area 112 (including but not limited to in at least one display portion 107).

[0113] In some non-limiting examples, at least one display portion 107 may be adjacent to at least one signal exchange portion 103, and in some non-limiting examples, it may be separated by the at least one signal exchange portion.

[0114] In some non-limiting examples, at least one signal exchange portion 103 may be positioned substantially centrally within the lateral orientation of the display panel 100.

[0115] In some non-limiting examples, at least one display portion 107 may substantially surround at least one signal exchange portion 103, including but not limited to being combined with at least one other display portion 107.

[0116] In some non-limiting examples, at least one signal exchange portion 103 may be positioned near the end of the display panel 100, including but not limited to one of its edges and corners, and configured such that at least one display portion 107 does not completely surround at least one signal exchange portion 103.

[0117] Those skilled in the art will understand that there may be scenarios where the layout of (sub)pixels 215 / 216 in the signal exchange portion 103 of the display panel 100 (including but not limited to one of the following: number, size (including but not limited to aperture ratio), shape, orientation, (color) order, configuration and pitch) is somewhat similar to its layout in at least one display portion 107 of the display panel 100, including but not limited to the following: its pitch in at least one signal exchange portion 103 is at least one of the following: the same as its pitch in at least one display portion 107, and an integer multiple thereof.

[0118] That said, the examples in this disclosure may be applicable in some scenarios where the layout of (sub)pixels 215 / 216 in at least one signal exchange portion 103 may be substantially different from their layout in at least one display portion 107 of the display panel 100.

[0119] In some non-limiting examples, the pixel density of at least one signal exchange portion 103 of the display panel 100 may not exceed the pixel density of at least one display portion 107 of the display panel 100.

[0120] In some non-limiting examples, the size (including but not limited to aperture ratio), shape, orientation, (color) order, configuration, and pitch of the (sub)pixels 215 / 216 in at least one signal exchange portion 103 of the display panel 100 may be substantially the same as the size (including but not limited to aperture ratio), shape, orientation, (color) order, configuration, and pitch of the (sub)pixels 215 / 216 in at least one display portion 107 of the display panel 100; however, the number of such (sub)pixels 215 / 216 may be reduced in the signal exchange portion 103 of the display panel 100. In this scenario, in some non-limiting examples, a common fine metal mask (FMM) may be used to pattern at least the (sub)pixels 215 / 216 in both at least one signal exchange portion 103 and at least one display portion 107, resulting in a reduction in manufacturing cost and complexity. In this scenario, in some non-limiting examples, the holes in the FMM corresponding to those (sub)pixels 215 / 216 that are absent (omitted) in at least one signal exchange section 103 can be covered (blocked) when used with at least one signal exchange section 103 to substantially prevent the formation of such at least one (sub)pixel 215 / 216. In some non-limiting examples, at least one transmissive region 112 can be formed in the region of the signal exchange section 103 where the formation of such at least one (sub)pixel 215 / 216 has been substantially prevented.

[0121] In some non-limiting examples, increasing the aperture ratio of at least one transmissive region 112 (for a portion of the display panel 100) relative to the aperture ratio of at least one emitting region 210 (for a corresponding portion of the corresponding display panel 100) can constrain the ability to maintain the continuity of at least one of the number, size (including but not limited to aperture ratio), shape, orientation, (color) order, configuration, and pitch of (sub)pixels 215 / 216 across at least one signal exchange portion 103 and at least one display portion 107, rather than modifying at least one of the number, size (including but not limited to aperture ratio), shape, orientation, (color) order, configuration, and pitch of (sub)pixels 215 / 216 in at least one signal exchange portion 103 to accommodate the introduction of at least one transmissive region 112 in its location. Those skilled in the art will understand that such modification can technically alter the pitch of (sub)pixels 215 / 216 in at least one signal exchange portion 103.

[0122] Go to Figure 2A An example segment of at least one display portion 107 of the display panel 100 is shown. For illustrative purposes, some example pixels 215 are shown with dashed outlines. In some non-limiting examples, each pixel 215 includes four sub-pixels 216, including but not limited to: a first sub-pixel 2161, which in some non-limiting examples may be an R (red) sub-pixel 216. R The two second sub-pixels 2162, which in some non-limiting examples may be G (green) sub-pixels 216. G ; and the third sub-pixel 2163, which in some non-limiting examples may be the B (blue) sub-pixel 216. B .

[0123] In some non-restrictive examples, such as Figure 2B As shown in example signal switching section 103 I Copyable Figure 2A The layout of (sub)pixels 215 / 216 in at least one display portion 107 shown is such that the size (including but not limited to aperture ratio), shape, orientation, (color) order, configuration and pitch of (sub)pixels 215 / 216 are the same, except that a subset of pixels 215 may be omitted and replaced by the corresponding transmissive area 112.

[0124] In some non-restrictive examples, such as Figure 2C As shown in example signal switching section 103 II Copyable Figure 2AThe layout of (sub)pixels 215 / 216 in at least one display portion 107 shown is such that the size (including but not limited to aperture ratio), shape, orientation, (color) order, configuration and pitch of (sub)pixels 215 / 216 are the same, except that in at least some pixels of pixel 215, at least one subpixel of its subpixel 216, including but not limited to one of two second subpixels 2162, may be omitted and replaced by the corresponding transmissive region 112.

[0125] While the transmissive region 112 is generally illustrated herein as having a clearly defined boundary, in some non-limiting examples, this boundary may be defined by at least one aperture 122 that is substantially free of any element, coating, or material that is at least one of the following: opaque, substantially restricts, and prevents the transmission of light incident on its outer surface. Those skilled in the art will understand that in some non-limiting examples, the area between the emitting regions 210 (including, but not limited to, the non-emitting regions 1911) of the signal exchange section 103 and a portion thereof may be sufficiently transparent, such an area may be considered the transmissive region 112, and therefore, such a transmissive region 112 may not have a clearly defined boundary.

[0126] In some non-limiting examples, the display panel 100 may further include at least one transition region (not shown) between at least one signal exchange portion 103 and at least one display portion 107, wherein the configuration of at least one of the emitting region 210 and the transmissive region 112 therein may differ from the configuration of at least one of the signal exchange portion 103 and at least one display portion 107. In some non-limiting examples, such a transition region may be omitted, such that the emitting region 210 may be provided with a substantially continuous repeating pattern across both the at least one signal exchange portion 103 and the at least one display portion 107.

[0127] In some non-limiting examples, the pixel density of at least one emission region 210 of at least one signal exchange portion 103 may be substantially the same as the pixel density of at least one emission region 210 of at least one display portion 107 adjacent to at least one signal exchange portion 103, at least in the region substantially adjacent to the at least one signal exchange portion 103. In some non-limiting examples, the pixel density of the display panel 100 may be substantially uniform across the display panel. In at least some applications, there may be scenarios where at least one signal exchange portion 103 and at least one display portion 107 are required to have substantially the same pixel density, including but not limited to, such that the resolution of the display panel 100 is substantially the same across both at least one signal exchange portion 103 and at least one display portion 107 of the display panel.

[0128] In some non-limiting examples, at least one signal exchange portion 103 may have a polygonal profile, including but not limited to at least one of a substantially square configuration and a rectangular configuration.

[0129] In some non-limiting examples, at least one signal exchange portion 103 may have a curved profile, including but not limited to at least one of a substantially circular configuration, an oval configuration, and an elliptical configuration.

[0130] In some non-limiting examples, at least one signal switching section 103 may have a reduced number of backplane components, including but not limited to having virtually no backplane components, including but not limited to TFT structure 2206. Figure 22 (including, but not limited to, metal traces, capacitors and other light-absorbing elements, including, but not limited to, opaque elements, the presence of which could otherwise interfere with at least one of the transmission of EM signals by at least one of the display components 130 and the resulting capture or emission, including, but not limited to, the capture of images by a camera.)

[0131] In some non-limiting examples, at least one transmission region 112 can be ensured by at least one defining layer 311, 321 ( Figure 3A The material is not available in ) to achieve this, including but not limited to forming the deposition layer 331 ( Figure 3B ) sedimentary material 2431 ( Figure 24 The second electrode 340 may include the deposited layer, which, in its lateral orientation, is positioned, shaped, spaced, sized, oriented, and located (with at least one boundary 303) as defined by the aperture 122. Figure 3A The transmission of EM radiation passing through at least one wavelength range of the EM spectrum (including but not limited to at least one of the visible spectrum, UV spectrum, IR spectrum and NIR spectrum (part thereof)) is significantly reduced in the region corresponding to at least one of the EM spectra.

[0132] In some non-limiting examples, such defining layers 311, 321 may include at least one of the following: layers typically encountered in optoelectronic devices 2100, including but not limited to substrate 10; backplate 302 ( Figure 3A At least one layer in ), including but not limited to at least one TFT structure 2206 and TFT insulating layer 307. Figure 3B ), buffer layer 317 ( Figure 3B ), gate insulating layer 318 ( Figure 3B ), interlayer insulation layer 319 ( Figure 3B ); at least one conductive metal line coupled to at least one TFT structure 2206 (including, but not limited to, data and scan lines, which in some non-limiting examples may be formed of at least one of Cu and TCO); and a first electrode 1920 ( Figure 19); and front panel 301 ( Figure 3B At least one layer of, including but not limited to, the first electrode 1920 and the second electrode 340. Figure 3D At least one semiconducting layer 330 between them Figure 3B ); and PDL 309 ( Figure 3B The extent to which this layer significantly reduces the transmission of light passing through it in at least one wavelength range of the EM spectrum (including, but not limited to, the visible spectrum, the UV spectrum, the IR spectrum, and the NIR spectrum (part thereof)).

[0133] Those skilled in the art will understand that, in some non-limiting examples, the first electrode 1920 of the optoelectronic device 2200 can be considered to form part of the backplate 302. Figure 3B In some non-limiting examples, the first electrode 1920 of the optoelectronic device 2200 may be considered to form part of the front plate 301.

[0134] As used herein, the term “significantly reduced transmission of EM radiation through it” generally refers to a reduction in the transmission of EM radiation through it of approximately 99%, 95%, 90%, 80%, 75%, 70%, 60%, 50%, 40%, and 30%.

[0135] In some non-limiting examples, at least one defining layer 311, 321, typically found in optoelectronic devices 2200, is used to define the transmission region 112. This defining layer can significantly reduce the transmission of EM radiation passing through it in at least one wavelength range of the EM spectrum (including, but not limited to, the visible spectrum, UV spectrum, IR spectrum, NIR spectrum, and at least one of the portions thereof) to at least some extent, introducing a "gray area" in which the ability to significantly reduce the transmission of EM radiation through such at least one defining layer 311, 321 is substantially less than 100%, and most of the EM radiation can pass through such defining layers 311, 321 beyond at least one boundary 313, 323 of the apertures 312, 322 defining the corresponding transmission region 112. Figure 3A ).

[0136] In some non-limiting examples, such defining layers 311, 321 may include at least one opaque region / coating 305 that significantly reduces the transmission of EM radiation passing through it in at least one wavelength range of the EM spectrum (including, but not limited to, at least one of, the visible spectrum, the UV spectrum, the IR spectrum, and the NIR spectrum (parts thereof). In some non-limiting examples, such opaque regions / coatings 305 may not typically be encountered in optoelectronic devices 2200, but have been introduced to help define at least one boundary 313, 323 of the apertures 312, 322, which defines a corresponding transmission region 112.

[0137] In some non-limiting examples, the use of an opaque region / coating 305 in at least one of the defining layers 311, 312 (including but not limited to the first defining layer 311) may reduce the possibility that at least one boundary 313, 323 of the apertures 312, 322 defining the corresponding transmission regions 112 may have reduced clarity, including but not limited to a transition region having at least one boundary 313, 323 of the apertures 312, 322 defining the corresponding transmission regions 112, through which a reduced amount of EM radiation may be transmitted.

[0138] In some non-limiting examples, the absence of material in the holes 312, 322 of the defining layers 311, 321 can be achieved by removing such material, including but not limited to laser ablation. The defining layers include, but are not limited to, one of the following: layers that are typically encountered in optoelectronic devices 2200, and opaque regions / coatings 305 introduced to help define at least one boundary 313, 323 of the holes 312, 322, which defines a corresponding transmissive region 112.

[0139] In some non-limiting examples, this can be achieved by ensuring that such a material cannot be deposited thereon, including but not limited to by depositing patterned material 2311 in a certain pattern. Figure 23 The absence of such material is achieved by means of a pattern including, but not limited to, at least one boundary 313, 323 corresponding to the holes 312, 322 that define the corresponding transmission regions 112.

[0140] In some non-limiting examples, the action of depositing patterned material 2311 can be performed using a shadow mask 2315 during the vapor deposition process. Figure 23 ), such as but not limited to FMM, wherein patterned material 2311 passes through at least one hole 2316 in shadow mask 2315 ( Figure 23 The at least one hole corresponds to at least one hole 312, 322 that defines the corresponding transmission region 112.

[0141] Regardless of how it is implemented, in some non-limiting examples, the absence of such material may be limited to at least one boundary 313, 323 of the apertures 312, 322, which defines the corresponding transmission region 112.

[0142] In some non-limiting examples, the deposition layer 331 including the deposition material 2431 may include a lateral pattern of at least one front plate hole 322 deposited in the front plate 301, characterized in that there is no sealing coating 2140 of the deposition material 2431 on the exposed surface 11 of the lower layer 2610. Figure 21 ).

[0143] In some non-limiting examples, the lateral pattern of the deposited layer 331 may be specified by depositing a patterned coating 310 in a certain pattern prior to the deposition of the deposited material 2431, including but not limited to inserting a shadow mask 2315 therebetween during the deposition process. The patterned coating includes patterned material 2311, including but not limited to nucleation inhibition coating (NIC).

[0144] In some non-limiting examples, when the patterned coating 310 includes a NIC, the pattern of the patterned material 231 may substantially correspond to at least one boundary 323 of the (front panel) second layer hole 322, such that when the deposited material 2431 is subsequently deposited, the deposited material 2431 tends not to deposit where the patterned coating 310 has been deposited, and tends to accumulate to form a deposited layer 331 in areas where there is substantially no patterned coating 310.

[0145] In some non-limiting examples, the lateral pattern of the deposited layer 331 can be specified by depositing the deposited material 1231 in a pattern substantially opposite to the lateral pattern of at least one (front plate) second layer hole 322 through the holes of the shadow mask 2315.

[0146] In some non-limiting examples, the lateral pattern of the deposited layer 331 can be specified by depositing the deposited material 2431 and subsequently removing the deposited material 2431 corresponding to at least one (front plate) second layer hole 322, including but not limited to laser ablation.

[0147] like Figures 3A to 3B and Figures 3C to 3DAs shown in the supplementary view, those skilled in the art will understand that at least one boundary 313, 323 of the apertures 312, 322 defining the corresponding transmission regions 112 can be defined by the geometric intersection of at least one first layer aperture boundary 313 of the first layer aperture 312 in the lateral orientation of the first defining layer 311 and at least one overlapping second layer aperture boundary 323 of the second layer aperture 322 in the lateral orientation of the second defining layer 312, wherein each of the first defining layer 311 and the second defining layer 321 significantly reduces the transmission of EM radiation through it.

[0148] Figure 3A This is a view of a segment of the signal switching section 103 shown in a plan view. Figure 3B This is a supplementary cross-sectional view of various layer-segment segments of the optoelectronic device 2100, including a first defining layer 311 and a second defining layer 321.

[0149] exist Figure 3B In this embodiment, at least one layer (including, but not limited to, at least one layer in the backplane 302, including, but not limited to, buffer layer 317, gate insulating layer 318, interlayer insulating layer 319, and TFT insulating layer 307) is shown disposed on a first side of the substrate 10, including, but not limited to, the exposed layer surface of the bottom substrate 315. In some non-limiting examples, at least one layer in the frontplane 301 (including, but not limited to, PDL 309) and at least one semiconductive layer 330 may be disposed on the exposed layer surface 11 of such a layer in the backplane 302.

[0150] like Figure 3A and Figure 3C As shown, the first defining layer 311 may have at least one first layer hole 312 defined by a corresponding first layer hole boundary 313, and the second defining layer 321 may have at least one second layer hole 322 defined by a corresponding second layer hole boundary 323. The geometric intersection of the overlapping first layer hole boundary 313 and second layer hole boundary 323 yields the hole boundary 303 defining the hole 122, including but not limited to... Figure 3C As shown.

[0151] In some non-limiting examples, the shape of the first layer hole boundary 313 may differ from the shape of the second layer hole boundary 323. In some non-limiting examples, as shown, the first layer hole boundary 313 may exhibit a first shape, including but not limited to a substantially circular shape as shown. In some non-limiting examples, as shown, the second layer hole boundary 323 may exhibit a second shape, including but not limited to a substantially rectangular shape as shown. In some non-limiting examples, at least one of the first layer hole boundary 313 and the second layer hole boundary 323 may exhibit a substantially irregular shape.

[0152] In some non-restrictive examples, such as Figure 3A As shown, the first layer hole boundary 313 can be completely located within the second layer hole boundary 323, such that at least one boundary 303 of the hole 122 can be defined only by the first layer hole boundary 313.

[0153] In some non-limiting examples, although not shown, the second layer hole boundary 323 may be completely located within the first layer hole boundary 313, such that at least one boundary 303 of the hole 122 may be defined solely by the second layer hole boundary 323.

[0154] In some non-restrictive examples, such as Figure 3B As shown, the first defining layer 311 may include a layer in the back plate 302. When the first defining layer 311 is disposed within the back plate 302, at least one first layer hole 312 may be a back plate hole.

[0155] In some non-restrictive examples, such as Figure 3D As shown, the first defining layer 311 may include a layer in the front panel 301. When the first defining layer 311 is disposed within the front panel 301, at least one first layer hole 312 may be a front panel hole.

[0156] In some non-restrictive examples, such as Figure 3B As shown, the first defining layer 311 may include an opaque area / coating 305, including but not limited to being disposed on the first side of the substrate 10.

[0157] Those skilled in the art will understand that, although not shown, in some non-limiting examples, the opaque area / coating 305 may be disposed on the exposed surface 11 of other layers, including but not limited to at least one of the following: bottom substrate 315 (corresponding to the first side of substrate 10), and at least one layer of backplate 302 (including but not limited to at least one of the following: at least one TFT structure 2206, TFT insulating layer 307, buffer layer 317, gate insulating layer 318, interlayer insulating layer 319, and first electrode 1920).

[0158] In some non-limiting examples, although not shown, the first defining layer 311 may include an opaque region / coating 305 disposed on a second side of the substrate 10, which may be opposite to a first side of the substrate 10 corresponding to the bottom substrate 315.

[0159] In some non-restrictive examples, such as Figure 3D As shown, the first defining layer 311 may include opaque areas / coatings 305, including but not limited to those disposed on the exposed surface 11 of the PDL 309.

[0160] Those skilled in the art will understand that, although not shown, in some non-limiting examples, the opaque area / coating 305 may be provided on the exposed surface 11 of other layers of the front panel 301, including but not limited to at least one of the following: the first electrode 1920, the second electrode 340 and at least one semiconductive layer 330 therebetween.

[0161] In some non-limiting examples, although not shown, the first defining layer 311 may include existing layers of the front panel 301, including but not limited to at least one of the following: the first electrode 1920, the second electrode 340 and at least one semiconducting layer 330 therebetween, and PDL 309.

[0162] In some non-limiting examples, although not shown, at least one first-layer aperture boundary 313 of the first-layer aperture 312 may be formed in the existing (backplane) first defining layer 311 of the backplane 302, and no opaque region / coating 305 may be deposited, including but not limited to elements of such (backplane) first defining layer 311 that are repositioned (including but not limited to removal) to significantly reduce the transmission of EM radiation passing through it in at least one wavelength range of the EM spectrum (including but not limited to at least one of the visible spectrum, UV spectrum, IR spectrum and NIR spectrum (parts thereof), including but not limited to elements that are at least one of opaque and reflective, including but not limited to at least one TFT structure 2206 and at least one conductive metal line (including but not limited to data and scan lines) coupled to at least one TFT structure 2206.

[0163] In some non-limiting examples, the second defining layer 321 may include a layer in the front panel 301. Where the second defining layer 321 is disposed within the front panel 301, the second layer hole 322 may be a front panel hole.

[0164] In some non-limiting examples, although not shown, the second defining layer 321 may include a layer in the back panel 302. Where the second defining layer 321 is disposed within the back panel 302, the second layer hole 322 may be a back panel hole.

[0165] In some non-restrictive examples, such as Figure 3B As shown, the second defining layer 321 may include the deposited layer 331, and the second electrode 340 may include the deposited layer.

[0166] In some non-restrictive examples, such as Figure 3D As shown, the second defining layer 321 may include a second electrode 340.

[0167] In some non-limiting examples, where the first defining layer 311 is disposed within the backplane 302, other mechanisms may be employed for patterning at least one (backplane) first hole boundary 313 of the (backplane) first hole 312 of the (backplane) first defining layer 311, including but not limited to photolithography, chemical etching and laser ablation.

[0168] Point spread function In some non-limiting examples, optical system 420 ( Figure 4A The point spread function (PSF) of a display panel 100 can be used to study the diffraction characteristics of the panel, which includes at least one signal exchange section 103 having at least one associated optoelectronic component 130, including but not limited to the under-display component 130. u It includes at least one transmission region 112 that allows light to pass through during at least one operation of emission and reception by at least one optoelectronic component 130.

[0169] In some non-limiting examples, the PSF associated with optoelectronic component 130 may include a component associated with the optics of optoelectronic component 130. In some non-limiting examples, the PSF associated with optoelectronic component 130 may include a component associated with at least one transmission region (including, but not limited to, its layout) of a signal exchange section after which optoelectronic component 130 is arranged.

[0170] In some non-limiting examples, the PSF associated with optoelectronic component 130 may be represented as an integrated PSF, which may be determined at least in part based on the PSF exhibited by optoelectronic component 130, the PSF associated with (including but not limited to) the display panel 100 through which light passes (including but not limited to the signal exchange section 103) (including but not limited to the PSF exhibited therein), and the PSF exhibited by any other optical component / layer (including but not limited to the PSF exhibited therein) in the optical path.

[0171] In some non-limiting examples, the (integrated) PSF associated with the optoelectronic component 130 can be evaluated by simulating a model of the optical system 420 formed by the display panel 100.

[0172] The optoelectronic component is receiver 130. r In some non-limiting examples (including, but not limited to, at least one of a camera and a detector), the (integrated) PSF can be measured by providing a point source 410 of light at the input of the optical system 420. Figure 4A ) and a reference object, in some non-limiting examples, the reference object may be in the form of a point object, and in some non-limiting examples, the point object may be included in object plane 402 ( Figure 4AThe features are clearly defined at the image plane 404; and an optoelectronic component 130 is provided at the output of the optical system 420 to enable the display of the image plane 404. Figure 4A The transmitted light is captured at the location 130. The optoelectronic component 130 is the transmitter 130. t In some non-limiting examples, optoelectronic component 130 may be provided at the input, and receiver 130 r (Including but not limited to cameras and photodiodes) can be provided at the output to capture the transmitted light.

[0173] In some non-limiting examples, the (integrated) PSF can be derived by analyzing a light pattern that is at least one of the following: recorded on image plane 404 and transmitted by receiver 130. r Accepted. Those skilled in the art will understand that various techniques known in the art can be used to measure PSF, including but not limited to direct imaging, pinhole method, and knife-edge method.

[0174] In some non-limiting examples, the PSF can be represented in the spatial domain as a three-dimensional distribution describing at least one of the shape, pattern, and intensity of the PSF. In some non-limiting examples, the spatial domain represents that the PSF can exhibit a central main lobe surrounded by at least one side lobe. In some non-limiting examples, the main lobe can represent the main peak of the distribution, and in some non-limiting examples, the main peak can have an intensity level as a (local) maximum.

[0175] In some non-limiting examples, the main lobe may correspond to a 0th-order peak, which corresponds to an image that is essentially not diffracted.

[0176] In some non-limiting examples, at least one sidelobe may correspond to n The side lobes contribute to the diffraction pattern. In some non-limiting examples, characteristics including, but not limited to, the number, shape, size, pattern, and intensity of the side lobes can describe the distribution of the side lobes relative to the main peak, and in some non-limiting examples, can indicate the presence of diffraction and other optical artifacts, including but not limited to aberrations and scattering. In some non-limiting examples, including but not limited to, in the case where the point source 410 is substantially perfectly coherent, at least one of the shapes and sizes of at least one side lobe may be similar to (including but not limited to, substantially the same as) the shape and size of at least one main lobe.

[0177] In some non-limiting examples, the (intensity) level of a side peak may reflect the intensity of the side peak as a part of the intensity of the main peak.

[0178] In some non-limiting examples where the blur of point source 410 can be limited without being excessively dispersed, a well-defined main lobe may form small (including but not limited to indistinguishable) side lobes and may indicate at least one of the following: reduced artifacts, good resolution, and increased signal-to-noise ratio (SNR).

[0179] In some non-limiting examples, the PSF can be represented as an optical transfer function (OTF) in the frequency domain. In some non-limiting examples, the OTF can be represented in the spatial domain. PSF The Fourier transform is derived from the expression, and in some non-limiting examples, this Fourier transform can be complex-valued. In some non-limiting examples, the amplitude of the OTF can be defined as the modulation transfer function (MTF). In some non-limiting examples, the OTF can provide information about the PSF, including but not limited to frequency response and phase information. In some non-limiting examples, the OTF can exhibit at least one of peaks and valleys. In some non-limiting examples, the peaks / valleys exhibited at a frequency can respectively indicate the ability / limitation to resolve at least one of the following at such frequencies: fine detail and high-frequency information.

[0180] In some non-limiting examples, the (integrated) PSF can be estimated through theoretical modeling. In some non-limiting examples, a mathematical model can be constructed based on the optical properties of the optical system 420 formed by the display panel 100 to calculate the simulated PSF. Those skilled in the art will understand that various modeling techniques and algorithms in the art can be used to estimate the PSF, including but not limited to ray tracing, Gaussian models, and Fourier transform models.

[0181] Now go to Figure 4A It shows an overall total of 400 a The example schematic diagram illustrates that an optical system 420 transmits a wave 401 (“emitted EM signal”) emitted by a light source 410 at an object plane 402 to an image plane 404. The wave includes, but is not limited to, at least one of collimated waves and spherical waves, and the source includes, but is not limited to, a point source.

[0182] In some non-limiting examples, source 410 may include an image (part of it) on a surface outside user equipment 110, including but not limited to the facial surface of user 10, illuminated by an illuminator, including but not limited to a flashlight and an IR emitter, the IR emitter including but not limited to at least one of the following: a floodlight illuminator for illuminating the surface to facilitate surface detection, and a dot projector for projecting a plurality of points (including but not limited to a grid) of (IR) light onto the surface and constructing a depth map therefrom. In some non-limiting examples, where the IR emitter is a dot projector, the illumination of the surface by one of the points may serve as point source 410.

[0183] In some non-limiting examples, source 410 may include devices external to user equipment 110, including but not limited to an IR emitter, including but not limited to at least one of the following: a floodlight illuminator for illuminating a surface to facilitate surface detection, and a dot projector for projecting a plurality of points (including but not limited to a grid) of IR light onto the surface and constructing a depth map therefrom. In some non-limiting examples, where the IR emitter is a dot projector, one of the points may be used as source 410.

[0184] In some non-limiting examples, image plane 404 may include an image (part of it) on a surface outside user equipment 110 (including but not limited to the facial surface of user 10) captured by a camera (including but not limited to an IR camera).

[0185] In some non-limiting examples, image plane 404 may be a device (part of it) external to user equipment 110, including but not limited to a camera, including but not limited to an IR camera, for capturing images on a surface external to user equipment 100 (including but not limited to the facial surface of user 10).

[0186] In some non-limiting examples, the optical system 420 may include at least one signal exchange portion 103, which includes at least one transmission region 112 of the display panel 100 of the user equipment 110 and has an associated PSF. In some non-limiting examples, the associated PSF may include its components associated with the at least one transmission region 112, including components related to its layout (including but not limited to at least one of its size (including but not limited to aperture ratio), shape, orientation, and pitch).

[0187] In some non-limiting examples, the image plane 404 may be the focal plane of the optoelectronic component 130, which includes, but is not limited to, the under-display component 130. u The components under the display include, but are not limited to, an IR sensor. In some non-limiting examples, the image of the transmitted EM signal received at image plane 404 may be of its received type ("received EM signal").

[0188] In some non-limiting examples, the distance between the object plane 402 and the focal plane 403 of the optical system 420 can be determined by... d 1 indicates that the distance between the focal plane 403 and the image plane 404 of the optical system 420 can be determined by... d 2 represents.

[0189] In some non-limiting examples, the two-dimensional impulse function in the spatial domain of the projection of source 410 onto object plane 404 via optical system 420 can be given by equation (1): h ( x , y ) = f ( x , y ) ⊕ g ( x , y (1) in: f ( x , y ) is a two-dimensional impulse function in the spatial domain of source 410; and g ( x , y ) is the spatial PSF of the optical system 420.

[0190] Therefore, if the PSF of the optical system 420 is known, it can be determined by deconvolution operations, including but not limited to the Wiener filter given by equation (2), by taking f ( x , y Inverse Fourier Transform F ( u , v ), recover from the received EM signal recorded by the optoelectronic component 130 f ( x , y (“Recreated EM signal”):

[0191] in: G ( u , v )yes g ( x , y Fourier transform of ) H ( u , v )yes h ( x , y Fourier transform of ) and C It is a noise-dependent component, including but not limited to at least one of a function and a constant.

[0192] In some non-limiting examples, the optical system 420 may include additional components (not shown) in the optical path, including but not limited to at least one of the following: optical elements (including but not limited to lenses and prisms) that may be positioned within the user equipment 110 between at least one of the following: object plane 402 and optical system 420, and optical system 420 and image plane 404 (including but not limited to, as part of display under component 130). u (part of) and other elements that may introduce distortion (including but not limited to diffraction effects) into the optical system 420, including but not limited to additional components of the display panel 100, including but not limited to electrodes 1920, 340, 2850, TFT structure 2206, particle structure 2150 and its overlay 2170.

[0193] Those skilled in the art will understand that the presence of such an additional component in the optical path can be due to one of the following: introducing an additional focal plane (not shown) into Figure 400, and changing... d 1 and d The effective positioning of either of the two.

[0194] Those skilled in the art will understand that, in addition to the aspect contributed by the display panel 100 and at least one transmission region 112 therethrough, the PSF of the optical system 420 on the image plane 404 can also reflect the aspect contributed by any of these additional components.

[0195] In some non-limiting examples, the source of light incident on the surface may be a component 130 below the display. u Components, including but not limited to non-display components 130 n It prevents light from passing through a portion of the display panel 100, so that light incident on the surface does not pass through the optical system 420.

[0196] In some non-limiting examples, the source of light incident on the surface may be the display under-display component 130. u This allows light incident on the surface to pass through the optical system 420.

[0197] In some non-limiting examples, image plane 404 may be a component (including, but not limited to, external camera and non-display component 130). n One of them) is part of the light so that the capture of this light does not pass through the optical system 420.

[0198] In some non-limiting examples, image plane 404 may be the under-display component 130. u This allows the light incident on the surface to be captured and passed through the optical system 420.

[0199] In some non-limiting examples, both the source 410 and the component housing the image plane 404 can be considered as the under-display component 130. u And as Figure 4B As shown, the optical system 420 can be considered to include two optical system components 421 and 422, each corresponding to a signal exchange section 103. This signal exchange section includes at least one transmission region 112 of the display panel 100 of the user equipment 110 and has an associated PSF, including but not limited to the common signal exchange section 103. In some non-limiting examples, the source 410 may include a first optoelectronic component 1301, including but not limited to a transmitter 130. t In some non-limiting examples, the component housing the image plane 404 may include a second optoelectronic component 1302, including but not limited to a detector 130. d .

[0200] As used herein, unless the context otherwise indicates, the term "transmitter side" generally carries the following meaning for the term it modifies: the term along the optical path 405 of the EM signal. t This includes, but is not limited to, intersections with the optical path, where the EM signal originates from the lower component 130 of the display. u The transmitter source 410 emits, including but not limited to, the transmitter itself, and points towards the reflector 406, including but not limited to, striking it, the reflector including but not limited to, surfaces outside the user equipment 110 (including but not limited to those of the user 10).

[0201] As used herein, unless the context otherwise indicates, the term "detector side" generally carries the following meaning for the terms it modifies: the term refers to the optical path 405 of the EM signal. d The EM signal is emitted from reflector 406, which includes, but is not limited to, surfaces outside user equipment 110 (including, but not limited to, those of user 10), and points towards the display lower component 130, including but not limited to surfaces intersecting with the optical path. u The detector's object plane 404 includes, but is not limited to, impacts on it.

[0202] In some non-limiting examples, as shown, the first optical system component 421 may be positioned such that the optical path 405 t Passing through it, the first optical system component 421 can be considered as the transmitter-side optical system component 421.

[0203] In some non-limiting examples, as shown, the second optical system component 422 can be positioned such that the optical path 405 d Passing through it, the second optical system component 422 can be considered as the detector-side optical system component 422.

[0204] In some non-limiting examples, the first optical system component 421 may be substantially the same as the second optical system component 422, except that light passes through at least one transmission area 112 of the display panel 100 of the user equipment 110 in the first optical system component 421 in a direction opposite to the direction in which light passes through at least one transmission area 112 of the display panel 100 of the user equipment 110 in the second optical system component 422.

[0205] In some non-limiting examples, at least one of the PSF associated with the first optical system component 421 and the PSF associated with the second optical system component 422 may include its components associated with the corresponding at least one transmission region 112, including components related to its layout (including but not limited to at least one of its size (including but not limited to aperture ratio), shape, orientation and pitch).

[0206] In some non-limiting examples, the PSF associated with the first optical system component 421 may be substantially the same as the PSF associated with the second optical system component 422. In some non-limiting examples, the PSF associated with the first optical system component 421 may be different from the PSF associated with the second optical system component 422.

[0207] In some non-limiting examples, the distance between the focal plane 4031 of the first optical system component 421 and the focal plane 4032 of the second optical system component 422 can be determined by... d 3i + d 3r It means that, among them d 3i This is the distance between the focal plane 4031 of the first optical system component 421 and the external surface of the user equipment 110 (including but not limited to the user 10), the distance traveled by light emitted from the source 410 through at least one transmission region 112 and incident on that surface; and d 3r This is the distance between a surface external to user equipment 110 (including but not limited to user 10) and the focal plane 4032 of the second optical system component 422, the distance that light reflected from the surface, returns through at least one transmission region 112, and is received at the image plane 404 travels. In some non-limiting examples, d 3i = d 3r .

[0208] In some non-limiting examples, light transmitted through the signal exchange portion 103 of the display panel 100 may be modulated (including but not limited to interference) by each individual optical component in the optical path 405, the signal exchange portion including at least one transmission region 112 having at least one optoelectronic component 130 associated therewith, including but not limited to optoelectronic components disposed behind the panel, the optical components including but not limited to at least one optoelectronic component 130 and the optics of the signal exchange portion 103, including but not limited to at least one of the dimensions (including but not limited to aperture ratio), shape, orientation and pitch of the at least one transmission region 112 located therein.

[0209] In some non-limiting examples where the PSF of each optical component (including, but not limited to, optoelectronic component 130 and signal switching section 103) along the optical path is known, the integrated PSF can be calculated by convolving at least one of the PSFs of all and subsets of these optical components, depending on the accuracy to be achieved.

[0210] In some non-limiting examples where the signal exchange section 103 includes a plurality of emission regions 210 (at least one transmission region 112 may be disposed between the plurality of emission regions), the layout of the emission regions 210 (including but not limited to number, size (including but not limited to aperture ratio), shape, orientation, (color) order), configuration and pitch of at least one of these can affect the diffraction pattern applied to light transmitted through the signal exchange section 103.

[0211] In some non-limiting examples, the PSF may be affected by the interaction between the optical components and the properties of light, including but not limited to its wavelength spectrum, which is emitted and received by the optoelectronic component 130 through the display panel 100 at least once.

[0212] In some non-limiting examples, at least one of the measurement, estimation and calculation of PSF may take into account at least one of the following factors, including but not limited to: system noise (including but not limited to component-dependent noise and background noise), imaging conditions (including but not limited to brightness and contrast), other optical effects (including but not limited to aberrations and scattering) and human visual perception.

[0213] Now go to Figure 5AThe experimental setup, typically shown at position 500, is illustrated, where a point source 410, illuminated by an illumination source 515, is viewed at a receiver 520 via a display panel 100. In the experiment, the surface 510 is a substantially vertical wall, and the illumination source 515 is a laser pointer emitting IR light with a wavelength of approximately 980 nm. The display panel 100 includes at least one signal exchange portion 103 comprising at least one transmission region 112, and the display panel is positioned at a distance of approximately 60 cm from the wall 510. D The laser pointer 515 is positioned such that it illuminates the wall 510 without passing through it, and the optical path 405 between the illuminated wall 510 and the receiver 520 passes through at least one signal exchange section 103. The receiver 520 includes an IR camera with an objective lens 525 having a diameter of approximately 0.98 cm. D L And a focal length of approximately 5.5cm f The receiver 520 is positioned substantially flush with the display panel 100, such that the distance between them is... D 2 is approximately 0.1 cm.

[0214] Figure 5B The image is recorded by receiver 520, which shows the diffraction pattern of point source 410 on image plane 404. Figure 5C The normalized intensity profile 535 of the recorded diffraction pattern, varying with spatial positioning along line 5-5, and the intensity profile 545 of the theoretical PSF of the point source, neglecting beam distribution, are shown. Figure 5A The experimental setup calculates the intensity profile of the simulated PSF considering the beam distribution, as shown in the figure. Figure 5D It shows the reflection Figure 5C The image shown is a simulated image of the intensity profile 555 of the simulated PSF. In some non-limiting examples, the intensity of the simulated PSF can be derived by convolving the intensity of the theoretical PSF with the beam distribution of the point source (including, but not limited to, a Gaussian distribution as used in this calculation).

[0215] exist Figure 5B and Figure 5D In the image, there are multiple lobes, which are points arranged in an array around the central main lobe and surrounded by multiple side lobes. The main point can be understood as a zero-order point, whose intensity and size are at least the intensity and size of the points surrounding it, and it can be understood as a diffraction point. In some non-limiting examples, the size of the zero-order point can substantially correspond to the size of the source 410, and in some non-limiting examples it can be slightly larger due to divergence.

[0216] Through with Figure 5CBy comparing the intensity profiles in the data, it can be seen that the center lobe corresponds to the central peak of the PSF, and its intensity is at least equal to the intensity of its side peaks. In some non-limiting examples, due to factors including but not limited to supersaturation, the central peak may encompass the 0th-order peak and at least one side peak on either side, including but not limited to the 1st-order peak, such that the width of the central peak may be substantially equal to the interval between the encompassed side peaks.

[0217] A side lobe can be the result of light projected from source 410 passing through the transmission region 112 of the signal exchange portion 103 of panel 100 and interacting with at least one of the following: defining at least one boundary of the transmission region 112 and at least one of the substantially non-transparent elements disposed within the transmission region 112 (including, but not limited to, disposed across the transmission region).

[0218] In some non-limiting examples, the intensity of a diffraction point may not be greater than that of its corresponding 0th-order point, such that in some non-limiting examples, the intensity of the side peaks of the PSF corresponding to the diffraction point may often not be greater than the intensity of the main peak of the PSF corresponding to the 0th-order point. In some non-limiting examples, the intensity of the side peaks of the PSF corresponding to the diffraction point may often vary with the diffraction order. N The intensity increases while the intensity decreases, so that, but not limited to, the intensity of the side peaks corresponding to the second-order diffraction point may often not be greater than the intensity of the side peaks corresponding to the first-order diffraction point.

[0219] In some non-limiting examples, the PSF can be evaluated by various geometric metrics, including but not limited to the size of the main lobe, including but not limited to at least one of the following: diameter and area, spacing between the main lobe and the side lobes, spacing between the side lobes, and distance from the main lobe to the side lobe where the intensity reaches the threshold.

[0220] In some non-limiting examples, the PSF can be evaluated by various intensity-related measures, including but not limited to the intensity level of the main peak, the intensity level of a side peak of a certain order, and the ratio of the intensity level of the main peak to the intensity level of a side peak of a certain order.

[0221] In some non-limiting examples, at least one of measuring, estimating, and computing the PSF is used to perform deconvolution computation to degrade at least one of the reversible image and the light pattern represented therefrom, in order to produce a corrected (including but not limited to reconstructed and restored) image and the light pattern represented therefrom.

[0222] In some non-limiting examples, inaccuracies in measuring, estimating, and calculating at least one of the PSFs may affect the ability to mitigate diffraction effects caused by the display panel 100, and thus result in at least one of information distortion and information loss. In some non-limiting examples, although certain algorithms may be employed to compensate for such inaccuracies, including but not limited to algorithms that model the different optical effects caused by at least one of the display panel 100, the optoelectronic component 130, and the human visual system, there may be challenges in achieving corrections with substantial (visual) fidelity.

[0223] Reduce diffraction In this disclosure, as used herein, unless the context otherwise indicates, the adjective “regular” generally carries the following meaning for the term it modifies: substantial (including but not limited to precise) similarity (including but not limited to symmetry) in the properties (including but not limited to position, shape, spacing, size, orientation, and positioning) of at least one of the terms themselves and a part of the content referred to by the terms (including but not limited to the pattern thereof).

[0224] In this disclosure, as used herein, unless the context otherwise indicates, the adjective “irregular” can generally be used to give the term it modifies the opposite meaning to the adjective “regular”, including either the part of the term or the complete lack of regularity.

[0225] In some non-limiting examples, a display panel 100 including at least one signal exchange portion 103 having at least one transmission region 112 may interfere with the transmission and associated capture of at least one of the following: images and light patterns represented by at least one EM signal 131 passing through an aperture of at least one transmission region 112, including but not limited to at least one transmission region 112 being shaped to exhibit a unique and non-uniform diffraction pattern.

[0226] In some non-limiting examples, this interference may be caused by the diffraction characteristics of the diffraction pattern.

[0227] In some non-limiting examples, interference caused by the diffraction characteristics of the diffraction pattern can often reduce the SNR, and consequently increase the possibility that at least one diffraction point associated with the first point may be mistaken for the second point in the context of the facial identification system, potentially leading to compromised facial identification results.

[0228] In some non-limiting examples, diffraction properties can reduce the ability to mitigate interference from such diffraction patterns, i.e., allow the display-under-part 130 uThe ability to perform one of the following operations: accurately receive and process the pattern, and even apply post-processing techniques. In some non-limiting examples, this may result in at least one of the following: distortion of the dot array projected from the under-display emitter due to diffraction effects, and degraded image quality. In some non-limiting examples, this may result in the under-display component 130... u The reduced fidelity of the captured information may interfere with the functionality of user equipment 110. In some non-limiting examples, the user equipment may rely on components under the display 130. u Captured information. On display component 130. u These are some non-limiting examples of cameras under a display, in which degradation, including but not limited to blur, haze, and glare, can be observed in images captured by such cameras.

[0229] In some non-limiting examples, the degree of interference to the capture of at least one of an image and the light pattern represented therefrom caused by at least one EM signal 131 passing through at least one transmission region 112 of at least one signal exchange portion 103 of the display panel 100 can be characterized by the PSF of such display panel 100.

[0230] Now go to Figure 6A A plan view can be provided to illustrate an example type 110 of user equipment 110 according to a non-limiting example. a It includes a display panel 100 a . Figure 6B It shows along Figure 6A The display panel 100 cut by line 6B-6B a A sectional view.

[0231] In some non-restrictive examples, such as Figure 6A As shown, user equipment 110 a It can accommodate multiple optoelectronic components 130, at least one of which may be a display under-display component 130 shown in dashed outline. u In some non-limiting examples, all optoelectronic components 130 may be under-display components 130. u In some non-limiting examples, as shown, at least one optoelectronic component 130 may be a non-display component 130. n This includes, but is not limited to, punch-hole cameras and transmitters. In some non-limiting examples, the non-display component 130 n Can be positioned on display panel 100 a In the non-display portion (not shown), the non-display portion may, in some non-limiting examples, have essentially no emission area 210. In some non-limiting examples, the non-display portion may be in the form of, but not limited to, cutouts, notches, and borders.

[0232] In some non-limiting examples, display panel 100 a It may include at least one signal switching section 103, each of which may be connected to at least one display under-display component 130. u Related. In some non-limiting examples, each display has 130 components. u It may have a corresponding signal exchange section 103 disposed in the optical path. Although not shown, in some non-limiting examples, there may be more than one display component 130. u It can be installed after the common signal switching section 103.

[0233] In some non-limiting examples, as shown, at least one optoelectronic component 130 may be positioned on the user equipment 110. a Near the lateral end (including but not limited to at least one of its edges and corners), including but not limited to at that end, such that an optoelectronic component 130 can be connected to the user equipment 110. a Other optoelectronic components 130 are spaced apart in a lateral orientation. In some non-limiting examples, this placement of optoelectronic components 130 with a certain lateral distance may be applicable in some scenarios where improved depth perception is required to support 3D imaging. This may be because each component 130 can capture an image at a different non-zero angle relative to an object (including but not limited to user 10), and therefore contains different depth information, resulting in a 3D representation with increased detail and accuracy. In some non-limiting examples, positioned on user device 110 a At least one optoelectronic component of the optoelectronic components 130 near the end (including but not limited to the end) may be a non-display under-display component 130. n .

[0234] At least one optoelectronic component in optoelectronic component 130 is a non-display under-display component 130. n In some non-limiting examples, the non-display component 130 n Image quality can be altered by reducing the number of layers along the optical path, where light passes through at least one of the following: (1) under a non-display component 130 n The degradation resulting in reduced performance, including but not limited to diffraction, aberrations, and scattering, occurs both before and after reception. In some non-limiting examples, including but not limited to situations where there are spatial constraints providing lateral distances for various optoelectronic components 130, at least one optoelectronic component 130 is a non-display under-display component 130. n It can have increased applicability in some scenarios that require substantial depth imaging.

[0235] In some non-limiting examples, at least one optoelectronic component 130, including but not limited to optoelectronic component 1303, may be positioned substantially centrally on the user equipment 110. a The side faces inward. In some non-limiting examples, this optoelectronic component 1303 may be a display under-display component 130. u .

[0236] Those skilled in the relevant field will understand. Figure 6A The number, type, and location of the optoelectronic components 130 shown are for illustrative purposes and examples discussed herein only, and should not be construed as limiting any of the number, type, and location of the optoelectronic components 130, provided that at least one of the optoelectronic components 130 is an under-display component 130. u .

[0237] exist Figure 6B In the diagram, the first optoelectronic component 1301 and the second optoelectronic component 1302 can be shown as being arranged behind the first signal exchange section 1031 and the second signal exchange section 1032, respectively.

[0238] In some non-limiting examples, at least one of the first optoelectronic component 1301 and the second optoelectronic component 1302 may be arranged to overlap with at least one emitting region 210, each emitting region corresponding to (sub)pixels 215 / 216, such that light can be transmitted and received through the transmission region 112 in the signal exchange portion 103 without impairing the visual content displayed in the signal exchange portion 103 of the display panel 100.

[0239] Although not shown, in some non-limiting examples, at least one optoelectronic component 130 may be arranged in the user equipment 110. a There is basically no display panel 100 a In the region of (sub)pixels 215 / 216.

[0240] Without wishing to be bound by any particular theory, it may be assumed that, in some non-limiting examples, image quality can be improved due to the increased amount of light when at least one operation of receiving and transmitting is performed by multiple optoelectronic components 130, compared to the amount of light when only one optoelectronic component 130 is used for receiving and transmitting at least one operation.

[0241] In some non-limiting examples, there may be scenarios where the first optoelectronic component 1301 is required to have a first (integrated) PSF1 associated therewith, which is different from the second (integrated) PSF2 associated with the second optoelectronic component 1302.

[0242] Without being bound by any particular theory, it can be assumed that, because the first PSF1 associated with the first optoelectronic component 1301 is different from the second PSF2 associated with the second optoelectronic component 1302, at least one of the images and light patterns in an operation of transmission and reception performed by one of the first optoelectronic components 1301 and the second optoelectronic component 1302 may contain different (including but not limited to complementary) diffraction characteristics that may not be present in the other of the first optoelectronic component 1301 and the second optoelectronic component 1302. Therefore, the initial output of one optoelectronic component 130 (including but not limited to at least one of distortion and information loss) can be compensated by the initial output of the other optoelectronic component.

[0243] Without being bound by any particular theory, it can now be assumed that, due to the difference between the first PSF1 associated with the first optoelectronic component 1301 and the second PSF2 associated with the second optoelectronic component 1302, the diffraction pattern (including but not limited to its diffraction characteristics) assigned to one optoelectronic component 130 can be substantially prevented from being amplified (even if it may not necessarily be reduced in some scenarios) by the diffraction pattern (including but not limited to its diffraction characteristics) assigned to the other optoelectronic component 130, so that at least one of the image and the light pattern may have a reduced possibility of being damaged by a certain diffraction mode.

[0244] In some non-limiting examples, the integrated PSF associated with optoelectronic component 130 may be determined at least in part based on the PSF exhibited by optoelectronic component 130, the PSF associated with (including but not limited to) the corresponding signal exchange portion 103, and the PSF exhibited by any other component / layer (including but not limited to portions thereof) in the optical path.

[0245] In some non-limiting examples, the first optoelectronic component 1301 may exhibit a first component PSF. c1 Furthermore, the second optoelectronic component 1302 can exhibit a second component PSF. c2 In some non-restrictive examples, the first component PSF c1 Second component PSF c2 It can be different. In some non-restrictive examples, the first component PSF c1 Second component PSF c2 They are essentially the same.

[0246] In some non-limiting examples, the first signal switching section 1031 may represent a first panel PSF. p1 Furthermore, the signal switching section 1032 can display the second panel PSF. p2In some non-limiting examples, each of the first signal exchange section 1031 and the second signal exchange section 1032 may be configured such that the first panel PSF p1 Second panel PSF p2 They can be different, and therefore, they can impart different diffraction characteristics to their respective optoelectronic components 130. In some non-limiting examples, signal exchange sections 1031, 1032 can be configured in a similar (including but not limited to substantially the same) manner, and in some non-limiting examples, a single signal exchange section 103 is constituted, such that the first panel PSF p1 Second panel PSF p2 They are essentially the same.

[0247] Therefore, in some non-restrictive examples, the first component PSF c1 and the first panel PSF p1 At least one of them may be different from the second component PSF. c2 Second panel PSF p2 At least one of the corresponding components in the first optoelectronic component 1301 is such that the first integrated PSF associated with the first optoelectronic component 1301 is... i1 It may be different from the second integrated PSF associated with the second optoelectronic component 1302. i2 .

[0248] In some non-restrictive examples, the first component PSF c1 First panel PSF p1 and the first integrated PSF i1 At least one of them can exhibit the same characteristics as the second component PSF. c2 Second panel PSF p2 Second integrated PSF i2 The distribution of at least one of the corresponding features may differ, including but not limited to the main lobe pattern (including but not limited to its size and shape), the main lobe intensity (including but not limited to its intensity profile and (intensity) level), the side lobe pattern (including but not limited to its number, size, shape, spacing between adjacent side lobes and spacing between side lobes and the main lobe), and the side lobe intensity (including but not limited to its intensity profile and (intensity) level), which may consequently lead to changes in the metrics used to evaluate PSF, including but not limited to geometric metrics and intensity-related metrics.

[0249] Now go to Figures 7A to 7F , Figures 8A to 8F , Figures 9A to 9F and Figures 10A to 10F Various non-limiting examples of the interaction between a first PSF1 associated with the first optoelectronic component 1301 and a second PSF2 associated with the second optoelectronic component 1302 can be schematically illustrated. The first PSF1 may represent a first component PSF.c1 First panel PSF p1 and the first integrated PSF i1 One of them, and the second PSF2 can represent the second component PSF. c2 Second panel PSF p2 Second integrated PSF i2 The corresponding one in the middle.

[0250] In some non-limiting examples, the first PSF1 (including but not limited to the first component PSF) c1 First panel PSF p1 and the first integrated PSF i1 The side lobe pattern of at least one of them may be substantially different from that of the second PSF2 (including but not limited to the second component PSF). c2 Second panel PSF p2 Second integrated PSF i2 The side petal patterns of at least one of them overlap.

[0251] Without being bound by any particular theory, it may be assumed that, in some non-limiting examples, the information contained in the side lobes can be used to reconstruct at least one of the light and the light pattern in greater detail than could be achieved using only the main lobe. Thus, the non-overlapping side lobe pattern of the PSF associated with one optoelectronic component 130 can provide information that might be lost in the PSF associated with other optoelectronic components 130, which can help to recover the light with increased accuracy.

[0252] Figure 7A and Figure 7C The first PSF is illustrated schematically with a plan view. 1a Second PSF 2a The distribution, and Figure 7E The second PSF, shown as an overlay, is illustrated by the dashed outline. 2a The first PSF shown by the solid outline on the distribution 1a The distribution of . Figure 7B and Figure 7D The following are schematic examples along... Figure 7A Line 7A-7A and Figure 7C The first PSF is taken from line 7C-7C. 1a Second PSF 2a The intensity map, and Figure 7F The second PSF, shown as an overlay, is illustrated by the dashed outline. 2a The first PSF shown as a solid outline on the intensity map 1a Intensity map.

[0253] In some non-restrictive examples, such as Figure 7A As shown, the first PSF 1aThe petal pattern can be defined by a first configuration axis 711 and a second configuration axis 712. In some non-limiting examples, both the first configuration axis 711 and the second configuration axis 712 are located in the lateral plane of the display panel 100 and intersect at the intersection point. In some non-limiting examples, the first configuration axis 711 may form a non-zero angle with the second configuration axis 712. In some non-limiting examples, the first configuration axis 711 may be substantially orthogonal to the second configuration axis 712.

[0254] In some non-limiting examples, as shown in the figure, the main lobe 720 in the lobe pattern of the first PSF1 may be centered in a planar view at the intersection of the first configuration axis 711 and the second configuration axis 712. The main lobe 720 may be surrounded by a plurality of (including, but not limited to, four as shown in the figure) side lobes 730, each of which may be positioned along at least one of the first configuration axis 711 and the second configuration axis 712. In some non-limiting examples, at least two side lobes 730 may be symmetrically positioned around the main lobe 720, resulting in equal distances from the main lobe 720 along at least one of the first configuration axis 711 and the second configuration axis 712.

[0255] In some non-limiting examples, at least one of the size and shape of the main lobe 720 and at least one side lobe 730 may be substantially the same. Although not shown, in some non-limiting examples, at least one side lobe 730 may differ in at least one of the size and shape from at least one of the main lobe 720 and the other side lobes 730.

[0256] exist Figure 7B The image shows a main peak 725 corresponding to the intensity of the main lobe 720 and at least one side peak 735, each side peak corresponding to the intensity of the side lobe 730.

[0257] exist Figure 7C In the middle, the second PSF 2a The main lobe 760 in the lobe pattern can be centered in a planar view at the intersection of the first configuration axis 751 and the second configuration axis 752. In some non-limiting examples, each of the first configuration axis 751 and the second configuration axis 752 can be relative to the first PSF. 1aThe corresponding one of the first configuration axis 711 and the second configuration axis 712 is rotated by a non-zero angle, including but not limited to substantially 45° as shown in the figure. In some non-limiting examples, the main lobe 760 may be surrounded by a plurality of (including but not limited to, four as shown in the figure) side lobes 770, each of which may be positioned along at least one of the first configuration axis 751 and the second configuration axis 752. In some non-limiting examples, at least two side lobes 770 may be symmetrically positioned around the main lobe 760, resulting in at least one of the first configuration axis 751 and the second configuration axis 752 being equidistant from the main lobe 760.

[0258] In some non-limiting examples, at least one of the size and shape of the main lobe 760 and at least one side lobe 770 may be substantially the same. Although not shown, in some non-limiting examples, at least one of the size and shape of the at least one side lobe 770 may differ in at least one of the size and shape from at least one of the main lobe 760 and the other side lobes 770.

[0259] As shown in the figure, in some non-restricted examples, the second PSF 2a The petal pattern is essentially similar to that of the first PSF. 1a The petal pattern, because relative to: the intersection and orientation of the first configuration axis 751 and the second configuration axis 752, the second PSF 2a The petal pattern and the first PSF 1a The petal patterns are basically the same.

[0260] As shown in the figure, in some non-restricted examples, the second PSF 2a The petal pattern may differ from the first PSF. 1a The petal pattern, because the first configuration axis 751 can be rotated by a non-zero angle relative to the first configuration axis 711 in one of the clockwise and counterclockwise directions, including but not limited to substantially 45°, and the second configuration axis 752 can be rotated by the same non-zero angle relative to the second configuration axis 712, such that the second PSF 2a The petal pattern rotates at a non-zero angle.

[0261] exist Figure 7D In the image, the main peak 765, corresponding to the intensity of the main lobe 760, can be shown. However, due to the second PSF... 2a The petal pattern rotates by a non-zero angle, therefore the second PSF 2a The intensity map has virtually no side peaks corresponding to the intensity of any sidelobe 760.

[0262] As shown in the figure, in some non-restricted examples, the second PSF 2a The intensity map can be basically similar to the first PSF. 1aThe intensity map, because at least one of the intensity profile and intensity level of the main peak 765 is substantially the same as at least one of the intensity profile and intensity level of the main peak 725.

[0263] As shown in the figure, in some non-restricted examples, the second PSF 2a The intensity map can be compared with the first PSF. 1a The intensity maps are different because the first PSF 1a The intensity graph shows at least one side peak 735, each side peak corresponding to the intensity of a side lobe 730, which is in the second PSF. 2a The intensity is not shown in the intensity diagram.

[0264] In some non-restrictive examples, because the first PSF 1a The lobe pattern and intensity map show a side lobe profile that differs from the side lobe profile shown by at least one of the corresponding lobe patterns and intensity maps, the first PSF 1a Side lobe 730 and second PSF 2a The side lobes at 770° can be largely non-overlapping, such as Figure 7E (It is shown in a plan view superimposed on the second PSF) 2a The first PSF on the petal pattern 1a (petal pattern) and Figure 7F As shown (it illustrates the superposition on the second PSF) 2a The first PSF on the intensity profile 1a (Intensity profile).

[0265] Those skilled in the art will understand that the first PSF 1a Second PSF 2a The petal pattern is shown as being defined by the same number of configuration axes, and the second PSF 2a Each of the configuration axes 751 and 752 is relative to the first PSF 1a The corresponding configuration axes 711 and 712 rotate by substantially the same non-zero angle; this is for illustrative purposes and the examples discussed herein only, and should not be considered limiting. In some non-limiting examples, the first PSF... 1a Second PSF 2a The petal pattern can be defined by a different number of configuration axes. In some non-limiting examples, the first PSF... 1a At least one of the configuration axes 711 and 712 may be parallel to the second PSF. 2a At least one of the configuration axes 751 and 752.

[0266] Although for the purpose of simplifying the illustration, the first PSF 1aThe intensity profile and (intensity) level of the main peak 725 can be shown as compared with the second PSF. 2a The intensity profile and (intensity) level of the main peak 765 are essentially the same, but in some non-limiting examples, the first PSF... 1a The main peak 725 may differ from the second PSF in at least one of intensity profile and intensity level. 2a The main peak is 765.

[0267] Those skilled in the art will understand that, in some non-limiting examples, the first PSF 1a The side lobes 730 may differ from the second PSF in other aspects of their distribution (including but not limited to lobe pattern, including but not limited to size, shape, number, spacing between them, spacing from the corresponding main lobe, and intensity (including but not limited to at least one of intensity profile and intensity level)). 2a The side lobe is 770, which makes the first PSF 1a The side petal pattern is basically not related to the second PSF. 2a The side petal pattern is an overlapping side petal.

[0268] In some non-limiting examples, the first PSF1 (including but not limited to the first component PSF) c1 First panel PSF p1 and the first integrated PSF i1 The side lobe pattern of at least one of them can be combined with the second PSF1 (including but not limited to the second component PSF). c2 Second panel PSF p2 Second integrated PSF i2 The side petal patterns of at least one of them overlap.

[0269] Figure 8A and Figure 8C The first PSF is illustrated schematically with a plan view. 1b Second PSF 2b The distribution, and Figure 8E The second PSF, shown as an overlay, is illustrated by the dashed outline. 2b The first PSF shown by the solid outline on the distribution 1b The distribution of . Figure 8B and Figure 8D The following are schematic examples along... Figure 8A Line 8A-8A and Figure 8C The first PSF of line 8C-8C is taken. 1b Second PSF 2b The intensity map, and Figure 8F The second PSF, shown as an overlay, is illustrated by the dashed outline. 2bThe first PSF shown as a solid outline on the intensity map 1b Intensity map.

[0270] In some non-restrictive examples, such as Figure 8A As shown, the first PSF 1b The lobe pattern may be defined by a configuration axis 811, with the main lobe 820 centered on this configuration axis. In some non-limiting examples, the main lobe 820 may be surrounded by a plurality of (including, but not limited to, two as shown) side lobes 830, each of which may be positioned along the configuration axis 811. In some non-limiting examples, at least two side lobes 830 may be symmetrically positioned around the main lobe 820, resulting in equal distances from the main lobe 820 along the configuration axis 811.

[0271] In some non-limiting examples, at least one of the size and shape of the main lobe 820 and at least one side lobe 830 may be substantially the same. Although not shown, in some non-limiting examples, at least one side lobe 830 may differ in at least one of the size and shape from at least one of the main lobe 820 and the other side lobes 830.

[0272] exist Figure 8B The image shows a main peak 825 corresponding to the intensity of the main lobe 820 and at least one side peak 835, each side peak corresponding to the intensity of the side lobe 830.

[0273] In some non-restrictive examples, such as Figure 8C As shown, the second PSF 2b The petal pattern can be defined by a first configuration axis 851, a second configuration axis 852, a third configuration axis 853, and a fourth configuration axis 854. In some non-limiting examples, the second PSF... 2b The configuration axes 851-854 intersect at the intersection point, the second PSF 2b The main lobe 860 can be centered at the intersection point. In some non-limiting examples, the main lobe 860 can be surrounded by a plurality of (including, but not limited to, eight as shown) side lobes 870, each of which can be arranged along at least one of the configuration axes 851-854. Second PSF 2b The side lobes 870 may be separated by a substantially equal angle, including but not limited to substantially 45°. In some non-limiting examples, at least two side lobes 870 may be symmetrically positioned around the main lobe 860, resulting in equal distances from the main lobe 860 along at least one of the configuration axes 851-854.

[0274] In some non-limiting examples, as shown, at least one of the dimensions and shapes of at least one side lobe 870 may be substantially the same as, and different from, at least one of the dimensions and shapes of at least one main lobe 860. Although not shown, in some non-limiting examples, the main lobe 860 and at least one of the dimensions and shapes of at least one side lobe 870 may be substantially the same. In some non-limiting examples, at least one side lobe 870 may differ from the other side lobes 870 in at least one of its dimensions and shapes.

[0275] As shown in the figure, in some non-restricted examples, the second PSF 2b The distribution may differ from the first PSF in at least one of the following: 1b Distribution: with the first PSF 1b Compared to the number of 830 side lobes in the petal pattern, the second PSF 2b The number of 870 side lobes in the petal pattern is different; compared with the first PSF 1b Compared to the number of side lobes 830 in the petal pattern, the number of side lobes 870 in the second PSF 2b The petal patterns are separated at different (acute) angles (although every fourth sidelobe in sidelobe 870 substantially coincides with one sidelobe in sidelobe 830); and with the first PSF 1b Compared to the 830-dimensional sidelobe, the second PSF 2b The side lobe has a smaller dimension of 870.

[0276] exist Figure 8D The image shows a main peak 865 corresponding to the intensity of the main lobe 860 and at least one side peak 875, each side peak corresponding to the intensity of the side lobe 870.

[0277] As shown in the figure, in some non-restricted examples, the second PSF 2b The intensity map can be compared with the first PSF. 1b The intensity maps are basically similar because the second PSF 2b The intensity graph shows the number of peaks 865 and 875 compared to the first PSF. 1b The intensity graph shows that the number of peaks 825 and 835 are essentially the same, and the second PSF 2b The main peak 865 and the first PSF 1b The main peak 825 is substantially the same in at least one of intensity profile and intensity level.

[0278] As from Figure 8F As can be seen from the diagram, in some non-restricted examples, the second PSF 2b The intensity map can be compared with the first PSF. 1b The intensity maps are different because of the second PSF. 2bAt least one of the intensity profile of at least one side peak 875 and the intensity level may be associated with the first PSF. 1b The intensity profile and intensity level of at least one of the side peaks 835 are different.

[0279] Those skilled in the art will understand that, in some non-limiting examples, the first PSF 1b The intensity level of at least one of the main lobe 820 and the side lobe 830 can be either lower or higher than the second PSF. 2b The intensity level of at least one of the corresponding main lobe 860 and side lobes 870. In some non-limiting examples, the first PSF 1b At least one of the main peak 825 and the lateral peak 835 can be either wider or narrower than the second PSF. 2b At least one of the main peak 865 and the lateral peak 875.

[0280] Figures 8A to 8F and Figures 7A to 7F The difference is that the first PSF 1b Second PSF 2b It can show a certain degree of but not complete overlap of the side lobes at 830° and 870°, such as Figure 8E The plan is shown below.

[0281] In some non-restrictive examples, the second PSF 2b The first subset of the sidelobe 870 can be compared with the first PSF. 1b The side lobes of 830 overlap with one of the subsets, while the second PSF... 2b The second subset of the sidelobe 870 is essentially not related to the first PSF. 1b Any sidelobe overlaps by 830°.

[0282] Those skilled in the art will understand that, despite the second PSF 2b A subset of the configuration axes 851-854 of the petal pattern is shown as being related to the first PSF. 1b The configuration axes 811 of the petal patterns are essentially coincident, and thus contribute to the first PSF. 1b Side lobe 830 and second PSF 2b The side lobes of 870 have partial but not complete overlap, but this arrangement is for illustrative purposes only and should not be considered restrictive.

[0283] Those skilled in the art will understand that, in some non-limiting examples, the first PSF 1bThe side lobes 830 may differ from the second PSF in other aspects of their distribution (including, but not limited to, lobe pattern, including but not limited to, size, shape, number, spacing between them, spacing from the corresponding main lobe, and intensity (including but not limited to intensity profile and intensity level)). 2b The side lobe is 870, which makes the first PSF 1b Side lobe 830 and second PSF 2b The side lobes of 870 show some degree of but not complete overlap.

[0284] However, it exhibits a side-lobed pattern, the first PSF 1b It may differ from the second PSF in intensity (including, but not limited to, the intensity profile and (intensity) level of at least one of the main lobe and the side lobe). 2b .

[0285] Without wishing to be bound by any particular theory, it may be assumed that, in some non-limiting examples, variations in the intensity profile and level of at least one of the main peak and side peaks (including but not limited to higher-order side peaks) can provide information that can be used to distinguish individual features (including but not limited to closely spaced features). In some non-limiting examples, variations in intensity may be reflected in various metrics that can be used to evaluate the PSF, including but not limited to geometric and intensity-related metrics. In some non-limiting examples, side peaks with different intensities may be weighted differently in the evaluation of the PSF for the purpose of enhancing at least one of a feature and reducing noise.

[0286] In some non-limiting examples, the first PSF1 (including but not limited to the first component PSF) c1 First panel PSF p1 and the first integrated PSF i1 Each sidelobe of at least one of the components may correspond to the second PSF2 (including but not limited to the second component PSF). c2 Second panel PSF p2 Second integrated PSF i2 The sidelobe of the first PSF1 (corresponding to at least one of the two PSF2 sidelobes) may, in some non-limiting examples, be one of the following: completely or partially overlapping with the sidelobe of the second PSF2. Although there is a correspondence between the sidelobes of the first PSF1 and the second PSF2, the first PSF1 may differ from the sidelobe of the second PSF2 in at least one of the profile and level of its intensity.

[0287] Figure 9A and Figure 9C The first PSF is illustrated schematically with a plan view. 1c Second PSF 2c The distribution, and Figure 9EThe second PSF, shown as an overlay, is illustrated by the dashed outline. 2c The first PSF shown by the solid outline on the distribution 1c The distribution of . Figure 9B and Figure 9D The following are schematic examples along... Figure 9A Line 9A-9A and Figure 9C The first PSF of line 9C-9C is taken. 1c Second PSF 2c The intensity map, and Figure 9F The second PSF, shown as an overlay, is illustrated by the dashed outline. 2c The first PSF shown as a solid outline on the intensity map 1c Intensity map.

[0288] In some non-restrictive examples, such as Figure 9A As shown, the first PSF 1c The petal pattern may be defined by a first configuration axis 911, a second configuration axis 912, and a third configuration axis 913. In some non-limiting examples, the first, second, and third configuration axes may be located in the lateral plane of the display panel 100 and intersect at an intersection point. Although the first, second, and third configuration axes 911 and 912 are shown as being separated by substantially the same angle, in some non-limiting examples, each pair of adjacent configuration axes 911-913 may form an angle different from that of other pairs of adjacent configuration axes 911-913.

[0289] In some non-restrictive examples, as shown in the figure, the first PSF 1c In the petal pattern, the main lobe 920 can be centered in a planar view at the intersection of the first configuration axis 911, the second configuration axis 912, and the third configuration axis 913. In some non-limiting examples, the main lobe 920 can be surrounded by a plurality of (including, but not limited to, six as shown) side lobes 930, each of which can be positioned along at least one of the configuration axes 911-913. In some non-limiting examples, at least two side lobes 930 can be symmetrically positioned around the main lobe 920, resulting in equal distances from the main lobe 920 along at least one of the configuration axes 911-913.

[0290] In some non-limiting examples, as shown, the main lobe 920 may differ from at least one side lobe 930 in at least one of its size and shape. Although the side lobes 930 may be shown as substantially identical in at least one of their size and shape, in some non-limiting examples, at least one side lobe 930 may differ from the other side lobes 930 in at least one of their size and shape.

[0291] exist Figure 9B The image shows a main peak 925 corresponding to the intensity of the main lobe 920 and at least one side peak 935, each side peak corresponding to the intensity of the side lobe 930.

[0292] exist Figure 9C In the middle, the second PSF 2c The petal pattern can be defined by a first configuration axis 951, a second configuration axis 952, and a third configuration axis 953. In some non-limiting examples, configuration axes 951-953 can be aligned with the first PSF. 1c The configuration axes are essentially coincident. In some non-limiting examples, the second PSF 2c The main lobe 960 in the lobe pattern can be centered in the plane at the intersection of configuration axes 951-953. In some non-limiting examples, the main lobe 650 c It may be surrounded by a plurality of (including, but not limited to, six as shown in the figure) side lobes 970, each of which may be positioned along at least one of the configuration axes 951-953. In some non-limiting examples, at least two side lobes 970 may be symmetrically positioned around the main lobe 960, resulting in equal distances from the main lobe 960 along at least one of the configuration axes 951-953.

[0293] In some non-limiting examples, as shown, the main lobe 960 may differ from at least one side lobe 970 in at least one of its size and shape. Although the side lobes 970 may be shown as substantially identical in at least one of their size and shape, in some non-limiting examples, at least one side lobe 970 may differ from the other side lobes 970 in at least one of their size and shape.

[0294] As shown in the figure, in some non-restricted examples, the second PSF 2c The distribution can be basically similar to the first PSF. 1c The distribution of the second PSF is because: 2c Configuration axes 951-953 and the first PSF 1c The configuration axes 911-913 are basically coincident, the main lobe 960 is basically the same as the main lobe 920 in size and shape, and the side lobes 970 are basically the same as the side lobes 930 in pattern and number.

[0295] As shown in the figure, in some non-restricted examples, the second PSF 2c The distribution can be compared with the first PSF. 1c The distributions are different because of the second PSF. 2c The side lobes 970 are oriented such that the short axis of each side lobe 970 is aligned with the configuration axis in which the side lobe 970 is located, and the second PSF 1cThe side lobes 930 are oriented such that the major axis of each side lobe 930 is aligned with the configuration axis in which the side lobe 930 is located, and with the first PSF. 1c Compared to the sidelobe size of 930 (including but not limited to the minimum dimension), the second PSF 2c The side lobe 970 has a large size (including but not limited to the smallest dimension (corresponding to its minor axis)).

[0296] exist Figure 9D The image shows a main peak 965 corresponding to the intensity of the main lobe 960 and at least one side peak 975, each side peak corresponding to the intensity of the side lobe 970.

[0297] As shown in the figure, in some non-restricted examples, the second PSF 2c The intensity map can be basically similar to the first PSF. 1c The intensity map, because: in the second PSF 2c The intensity plot shows a main peak at 965 and at least one side peak at 975, and in the first PSF... 1c The intensity plot shows a main peak 925 and at least one side peak 935, and the main lobe 925 and the main lobe 965 are substantially identical in at least one of the intensity profile and (intensity) level.

[0298] As from Figure 9F It can be seen that in some non-restricted examples, the second PSF 2c The intensity map may differ from the first PSF. 1c The intensity map, because of the second PSF 2c The intensity profile and intensity level of the side peak 975 may differ from those of the first PSF. 1c The intensity profile and intensity level of the side peak 935.

[0299] In some non-restrictive examples, the first PSF 1c The intensity level of the lateral peak 935 can be at least one of the following: below or above the second PSF. 2c The side peak (intensity) level of 975. In some non-limiting examples, the first PSF 1c The lateral peak 935 can be at least one of the following: wider than or narrower than the second PSF. 2c The lateral peak is 975.

[0300] Figures 9A to 9F and Figures 7A to 7F and Figures 8A to 8F The difference is that the second PSF 2c Each sidelobe 970 can correspond to the first PSF 1c The sidelobe is 930, and in some non-limiting examples it can be associated with the first PSF. 1c The side lobes overlap, such as Figure 9E The plan is shown below.

[0301] Those skilled in the art will understand that, despite the second PSF 2c The configuration axes 911-913 of the petal pattern are shown as being aligned with the first PSF. 1c The configuration axes 951-953 of the petal pattern are essentially coincident, and thus contribute to the first PSF. 1c Side lobe 930 and second PSF 2c The correspondence between the side lobes 970 is shown, but this arrangement is for illustrative purposes only and should not be considered restrictive. In some non-restrictive examples, the second PSF... 2c The configuration axes 951-953 of the petal pattern can be relative to the first PSF. 1c The configuration axes 911-913 of the petal pattern are rotated by a non-zero angle, but the correspondence is still maintained.

[0302] Those skilled in the art will understand that, although in some non-limiting examples, the first PSF 1c The side lobes 930 may differ from the second PSF in other aspects of their distribution (including but not limited to lobe patterns, including but not limited to size, shape, number, spacing between them, distance from the corresponding main lobe, and intensity (including but not limited to intensity profile and intensity level)). 2c The side lobe is 970, but the second PSF 2c Side lobe 970 and first PSF 1c The side lobe 930 still shows a corresponding relationship.

[0303] In some non-limiting examples, the first PSF1 (including but not limited to the first component PSF) c1 First panel PSF p1 and the first integrated PSF i1 The main lobe of at least one of the components may differ from the second PSF2 (including but not limited to the second component PSF) in at least one of its intensity profile and level. c2 Second panel PSF p2 Second integrated PSF i2 The main lobe (corresponding to at least one of the main lobes).

[0304] Figure 10A and Figure 10C The first PSF is illustrated schematically with a plan view. 1d Second PSF 2d The distribution, and Figure 10E The second PSF, shown as an overlay, is illustrated by the dashed outline. 2d The first PSF shown by the solid outline on the distribution 1d The distribution of . Figure 10B and Figure 10D The following are schematic examples along... Figure 10A Line 10A-10A and Figure 10C The first PSF of the line 10C-10C is taken. 1d Second PSF 2d The intensity map, and Figure 10F The second PSF, shown as an overlay, is illustrated by the dashed outline. 2d The first PSF shown as a solid outline on the intensity map 1d Intensity map.

[0305] exist Figure 10A In the middle, the first PSF 1d The petal pattern may be defined by a plurality of first configuration axes 1011 and a plurality of second configuration axes 1012. In some non-limiting examples, the plurality of first configuration axes 1011 and the plurality of second configuration axes 1012 may all be located in the lateral plane of the display panel 100 and form a grid pattern. In some non-limiting examples, the first configuration axes 1011 may be substantially orthogonal to the second configuration axes 1012.

[0306] In some non-limiting examples, as shown in the figure, the main lobe 1020 and multiple (including, but not limited to, eight as shown) side lobes 1030 may be positioned on a grid formed by the first configuration axis 1011 and the second configuration axis 1012. In some non-limiting examples, at least two side lobes 1030 may be positioned symmetrically around the main lobe 1020, resulting in equal distances from the main lobe 1020.

[0307] In some non-limiting examples, at least one of the size and shape of the main lobe 1020 and at least one side lobe 1030 may be substantially the same. Although not shown, in some non-limiting examples, at least one side lobe 1030 may differ in at least one of the size and shape from at least one of the main lobe 1020 and at least one of the other side lobes 1030.

[0308] exist Figure 10B The image shows a main peak 1025 corresponding to the intensity of the main lobe 1020 and at least one side peak 1035, each side peak corresponding to the intensity of the side lobe 1030.

[0309] exist Figure 10C In the middle, the second PSF 2d The petal pattern can be defined by a plurality of first configuration axes 1051 and a plurality of second configuration axes 1052. In some non-limiting examples, the second PSF 2d The plurality of first configuration axes 1051 and the plurality of second configuration axes 1052 can be coupled to the first PSF. 1dThe multiple first configuration axes and multiple second configuration axes are substantially similar (including, but not limited to, those consistent with, them) and form a grid pattern. In some non-limiting examples, the main lobe 1060 and multiple (including, but not limited to, eight as shown) side lobes 1070 may be positioned on a grid formed by the first configuration axes 1051 and the second configuration axes 1052. In some non-limiting examples, at least two side lobes 1070 may be symmetrically positioned around the main lobe 1060, resulting in equal distances from the main lobe 1060.

[0310] In some non-limiting examples, at least one of the size and shape of the main lobe 1060 and at least one side lobe 1070 may be substantially the same. Although not shown, in some non-limiting examples, at least one side lobe 1070 may differ in at least one of the size and shape from the main lobe 1060 and at least one of the other side lobes 1070.

[0311] As shown in the figure, in some non-restricted examples, the second PSF 2d The distribution can be basically similar to the first PSF. 1d The distribution of the second PSF is because: 2c The configuration axes 1051 and 1052 are substantially coincident with the configuration axes 1011 and 1012, and the lobes 1060 and 1070 are substantially the same as lobes 1020 and 1030 in number, shape and pattern.

[0312] As shown in the figure, in some non-restricted examples, the second PSF 2d The distribution may differ from that of the first PSF. 1d The distribution, because of the first PSF 1c Compared to the 1020 and 1030 size of the second PSF, 2d The 1060 and 1070 lobes are relatively small.

[0313] exist Figure 10D The image shows a main peak 1065 corresponding to the intensity of the main lobe 1060 and at least one side peak 1075, each side peak corresponding to the intensity of the side lobe 1070.

[0314] As shown in the figure, in some non-restricted examples, the second PSF 2d The intensity map can be basically similar to the first PSF. 1d The intensity map, because in the second PSF 2d The intensity plot shows a main peak at 1065 and at least one side peak at 1075, and in the first PSF... 1d The intensity graph shows the main peak 1025 and at least one side peak 1035.

[0315] As from Figure 10FIt can be seen that in some non-restricted examples, the second PSF 2d The intensity map may differ from the first PSF. 1d The intensity map, because of the second PSF 2d The intensity profile and intensity level of at least one of the main peak 1065 and the lateral peak 1075 may differ from the first PSF. 1d The intensity profile and intensity level of at least one of the main peak 1025 and the lateral peak 1035.

[0316] In some non-restrictive examples, the first PSF 1d The intensity level of at least one of the main peak 1025 and at least one side peak 1035 can be either below or above the second PSF. 2d The intensity level of at least one of the main peak 1065 and at least one side peak 1075. In some non-limiting examples, the first PSF 1d At least one of the main peak 1025 and at least one side peak 1035 can be either wider or narrower than the second PSF. 2d The corresponding at least one of the main peak 1065 and at least one side peak 1075.

[0317] Figures 10A to 10F and Figures 7A to 7F , Figures 8A to 8F and Figures 9A to 9F The difference is: the first PSF 1d The distribution of main lobe 1020 and second PSF 2d The main lobe in the distribution is different in 1060, such as Figure 10E As shown, and the first PSF 1d The main peak 1025 and the second PSF 2d The main peak 1065 is different, such as Figure 10F The intensity diagram is shown below.

[0318] Despite the first PSF 1d The sidelobe 1030 in the distribution can be shown as corresponding to the second PSF. 2d The sidelobes in the distribution are 1070 and largely overlap with them, but in some non-restricted examples, the first PSF... 1d The side lobe 1030 may have one of the following characteristics: with the second PSF 2d The side lobes at 1070° are largely non-overlapping and partially overlapping. Those skilled in the art will understand that regarding... Figures 7A to 7F , Figures 8A to 8F , Figures 9A to 9F and Figures 10A to 10F The various lobe features described can be applied to each other.

[0319] In some non-limiting examples, the overlap in the sidelobe patterns of the first PSF1 and the sidelobe patterns of the PSF2 may be no more than one of about 60%, 50%, 40%, 30%, 20%, 25%, 20%, 10%, and 5%.

[0320] Although not shown, in some non-limiting examples, the main lobe of at least one of the first PSF1 and the second PSF2 may overlap with at least one side lobe of at least one of the first PSF1 and the second PSF2.

[0321] Although not shown, in some non-limiting examples, the main lobe of one of the first PSF1 and the second PSF2 may overlap with at least one side lobe of the other of the first PSF1 and the second PSF2.

[0322] In some non-limiting examples, the PSF associated with the display panel 100 (signal exchange portion 103) may include components associated with the transmission region 112, including but not limited to the layout of holes defining the transmission region 112 in a plan view, including but not limited to at least one of their number, size (including but not limited to aperture ratio), shape, orientation and pitch.

[0323] In some non-limiting examples, the first signal exchange section 1031 may include a plurality of first transmission regions 1121 configured differently from the plurality of second transmission regions 1122 of the second signal exchange section 1032, such that the first panel PSF of the first signal exchange section 1031 p1 The second panel PSF may be different from the second signal switching section 1032. p2 Therefore, the first signal exchange section 1031 and the second signal exchange section 1032 can impart different diffraction characteristics to at least one of the images and light patterns that are operated by one of the optoelectronic components 1301 and 1302 for transmission and reception, respectively.

[0324] In some non-limiting examples, the configuration of the plurality of first transmission regions 1121 in the first signal exchange section 1031 may differ from the configuration of the plurality of second transmission regions 1122 in the second signal exchange section 1032.

[0325] Now go to Figures 11A to 11E At least one segment 103a-103 of various example signal exchange sections of the display panel 100 can be shown. e .

[0326] exist Figure 11A In the middle, the signal switching section 103 aThe system may include a plurality of transmission regions 112, which may be aligned in at least one of rows 1111 and columns 1112. In some non-limiting examples, the transmission regions 112 may be aligned in parallel to at least one of rows 1111 and columns 1112. In some non-limiting examples, the transmission regions 112 may be positioned on a grid 1113 formed by rows 1111 and columns 1112.

[0327] exist Figure 11B In the middle, the signal switching section 103 b It may include a plurality of transmission regions 112, which may be arranged along a plurality of configuration axes 1121, 1122, 1123 and 1124 intersecting at an intersection point. In some non-limiting examples, at least one transmission region 112 may be located at the intersection point.

[0328] exist Figure 11C In the middle, the signal switching section 103 c A plurality of transmissive regions 112 may be included, which may be arranged in a polygonal (including but not limited to) configuration. In some non-limiting examples, at least one of the transmissive regions 112 may be aligned along a plurality of sides 1131-1135 of the polygon defined by the configuration. In some non-limiting examples, each vertex of the polygon may correspond to a transmissive region 112. In some non-limiting examples, at least one transmissive region 112 may be located within the polygon, including but not limited to being located at its center. Although a regular pentagonal configuration is shown, those skilled in the art will understand that other polygonal configurations (whether regular or irregular, including but not limited to triangles, squares, rectangles, parallelograms, and hexagons) may be applicable.

[0329] exist Figure 11D In the middle, the signal switching section 103 d The system may include multiple transmission regions 112, which may be arranged in an elliptical (including but not limited to circular) configuration. In some non-limiting examples, the transmission regions 112 may be equidistantly spaced on the periphery 1141 of an ellipse defined by the configuration. In some non-limiting examples, at least one transmission region 112 may be located within the ellipse, and in some non-limiting examples, substantially at its center. In some non-limiting examples, the transmission regions 112 may be arranged along the respective peripheries of a plurality of concentric circles.

[0330] In some non-restrictive examples, such as Figures 11A to 11D As shown, the transmission region 112 can exhibit a fairly high degree of periodicity in its configuration. Although not shown, in some non-limiting examples, the transmission region 112 can be substantially aperiodic (including, but not limited to, random and pseudo-random) in its configuration.

[0331] exist Figure 11E In the middle, the signal switching section 103 e It may include multiple transmission regions 112, which may be arranged in a substantially aperiodic configuration. In some non-limiting examples, the transmission regions 112 may be spaced apart at varying distances. In some non-limiting examples, the transmission regions 112 may be positioned on a grid 1113 using either random or pseudo-random placement.

[0332] In some non-limiting examples, the pitch of the plurality of transmission regions 1121 in the first signal exchange section 1031 may differ from the pitch of the plurality of transmission regions 1122 in the second signal exchange section 1032. In some non-limiting examples, the pitch of the transmission regions 112 may be measured by the interval between adjacent transmission regions 112.

[0333] Now go to Figure 12A A segment 103 of the first signal switching section 1031 of at least the display panel 100 is shown in a plan view. 1f Segment 103 of the second signal exchange section 1032 2f As shown in the figure, in some non-limiting examples, the first signal switching section 103 1f First transmission region 1121 and second signal exchange section 103 2f The second transmission region 1122 can be with Figure 11A Arranged in a similar way in an array configuration, only Figure 12A The transmission region 112 in the middle has a substantially square shape.

[0334] As shown in the figure, in some non-limiting examples, the first transmission region 1121 may have a first pitch along the first direction 1201. d 1a and the second pitch along the second direction 1202 d 2a In some non-limiting examples, the second direction may intersect the first direction 1201 at a non-zero angle (including but not limited to substantially 90°). In some non-limiting examples, the first pitch of the first transmission region 1121... d 1a Second pitch d 2a They can be substantially the same. In some non-limiting examples, the first pitch of the first transmission region 1121... d 1a Second pitch d 2a They can be different.

[0335] In some non-limiting examples, the configuration of the plurality of second transmission regions 1122 may be similar to the configuration of the plurality of first transmission regions 1121, and have a first pitch d along the first direction 1201. 1b and the second pitch along the second direction 1202 d 2b In some non-limiting examples, the first pitch d of the second transmission region 1122 1b Second pitch d 2b They can be essentially the same. In some non-limiting examples, the first pitch d of the second transmission region 1122 1b Second pitch d 2b They can be different.

[0336] In some non-limiting examples, the pitch of the first transmission region 1121 along one direction (including but not limited to the first pitch) d 1a The pitch along this direction may differ from that of the second transmission region 1122 (including but not limited to the first pitch). d 1b In some non-limiting examples, the pitch of the first transmission region 1121 along one direction (including but not limited to the first pitch) d 1a The pitch of the second transmission region 1122 along this direction (including but not limited to the first pitch) can be the pitch of the second transmission region 1122. d 1b The first transmission region 1121 and the second transmission region 1122 may have different pitches along one direction, but they may have one of the following: the same and different pitches along another direction.

[0337] Now go to Figure 12B A segment 103 of the first signal switching section 1031 of at least the display panel 100 is shown in a plan view. 1g Segment 103 of the second signal exchange section 1032 2g .

[0338] Figure 12B The signal switching section 103 may be different from Figure 12A The signal exchange section, because the transmission regions 1121 and 1122 can communicate with... Figure 11B Similar arrangements are made in elliptical (but not limited to) configurations (only) Figure 12B The transmission region 112 has a substantially square shape, such that the transmission region 112 has a first pitch along a first (including but not limited to radial) direction. d1c , d 1d And the second pitch along the second (including but not limited to the circumferential) direction d 2c , d 2d .

[0339] In some non-limiting examples, the pitch of the first transmission region 1121 along one direction (including but not limited to the first pitch d) 1e The pitch along this direction may differ from that of the second transmission region 1122 (including but not limited to the first pitch d). 1d In some non-limiting examples, the pitch of the first transmission region 1121 along one direction (including but not limited to the first pitch d) 1e The pitch of the second transmission region 1122 along this direction (including but not limited to the first pitch d) can be the pitch of the second transmission region 1122. 1d The first transmission region 1121 and the second transmission region 1122 may have different pitches along one direction, but they may have one of the following: the same and different pitches along another direction.

[0340] Although not shown, in some non-limiting examples, the transmission region 112 of at least one of the first signal exchange portion 1031 and the second signal exchange portion 1032 may have a pitch that varies along one direction.

[0341] The transmission regions 112 of the first signal exchange section 1031 and the second signal exchange section 1032 are shown in each segment 103 1f 303 2f It has the following characteristics Figure 12A The array configuration is arranged in a basically square shape, and in each segment 103 1g 103 2g It has the following characteristics Figure 12B The circular configuration arranged in the form of a substantially square shape and having substantially uniform dimensions is for illustrative purposes and for the example discussed herein only, and should not be considered as limiting in any way any of the size, shape, configuration, and orientation of the transmission region 112 in the first signal exchange section 1031 or the second signal exchange section 1032.

[0342] In some non-limiting examples, the size of at least one of the first transmission regions 1121 in the first signal exchange section 1031 (including, but not limited to, at least one of length, width, diameter, perimeter, area and aperture ratio) may be different from the size of at least one of the second transmission regions 1122 in the second signal exchange section 3032.

[0343] Now go to Figure 13 A segment 103 of the first signal switching section 1031 of at least the display panel 100 is shown in a plan view. 1h Segment 103 of the second signal exchange section 1032 2h As shown in the figure, in some non-limiting examples, the first signal switching section 103 1h First transmission region 1121 and second signal exchange section 103 2h The second transmission region 1122 can be with Figure 12A Arranged in a similar way in an array configuration, only Figure 13 The transmission region 112 has a rounded rectangular shape.

[0344] As shown in the figure, in some non-limiting examples, the first transmission region 1121 may have a width along the first direction 1201. w 1 and the height along the second direction 1202 h 1, and the second transmission region 1122 may have a width along the first direction 1201. w 1 Different widths w 2 and the height different from the height hi along the second direction 1202 h 2.

[0345] Although not shown, in some non-limiting examples, the dimension of the first transmission region 1121 along one direction may be different from the dimension of the second transmission region 1122 along such a direction, while the dimension of the first transmission region 1121 along other directions may be the same as the dimension of the second transmission region 1122 along such other directions.

[0346] The transmission regions 112 of the first exchange portion 1031 and the second exchange portion 1032 are shown in each segment 103 1h 103 2h It has Figure 13 The array configuration and substantially uniform shape in the document are for illustrative purposes and examples discussed herein only, and should not be considered as limiting in any way any of the shape, pitch, configuration, and orientation of the transmission regions in the first signal exchange section 1031 or the second signal exchange section 1032.

[0347] In some non-limiting examples, the size (including but not limited to aperture ratio) of the transmission region 112 in at least one signal exchange section 103 may vary, including but not limited to one of the following: such that all transmission regions in the transmission region 112 have a common size, and such that at least one transmission region in the transmission region 112 has a size different from the size of another transmission region in the transmission region 112.

[0348] In some non-limiting examples, the orientation of at least one first transmission region in the first transmission region 1121 of the first signal exchange section 1031 may be different from the orientation of at least one second transmission region in the second transmission region 1122 of the second signal exchange section 1032.

[0349] Now go to Figure 14 The diagram shows a segment 103 of the first signal exchange section 1031 of the display panel 100. 1i Segment 103 of the second signal exchange section 1032 2i As shown in the figure, in some non-limiting examples, the first signal switching section 103 1i First transmission region 1121 and second signal exchange section 103 2i The second transmission region 1122 can be with Figure 12A Arranged in a similar way in an array configuration, only Figure 14 The transmission region 112 in the middle has an elliptical shape.

[0350] As shown in the figure, the first signal switching section 103 1i Each of the first transmission regions 1121 can be oriented such that its main axis can be aligned along the second direction 1202, while the second signal exchange section 103 2i Each of the second transmission regions 1122 can be oriented such that its main axis can be aligned along the first direction 1201.

[0351] In some non-limiting examples, the principal axis of each first transmission region 1121 may intersect at an angle different from the angle at which the principal axis of each second transmission region 1122 intersects at least one of the first direction 1201 and the second direction 1202.

[0352] The transmission regions 112 of the first signal exchange section 1031 and the second signal exchange section 1032 are shown in each segment 103 1i 103 2i It has Figure 14The array configuration and substantially uniform size in the document are for illustrative purposes and examples discussed herein only, and should not be considered as limiting in any way any of the shape, size, pitch, and configuration of the transmission regions in the first signal exchange section 1031 or the second signal exchange section 1032.

[0353] In some non-limiting examples, the orientation of the transmission region 112 relative to the axis of at least one signal exchange portion 103 may vary, including but not limited to one of the following: such that all transmission regions in the transmission region 112 are oriented in a common direction, and such that at least one transmission region in the transmission region 112 is oriented in a direction different from that of another transmission region in the transmission region 112.

[0354] In some non-limiting examples, the shape of at least one first transmission region in the first transmission region 1121 of the first exchange portion 1031 may be different from the shape of at least one second transmission region in the second transmission region 1122 of the second signal exchange portion 1032.

[0355] Now go to Figure 15 A segment 103 of the first signal switching section 1031 of at least the display panel 100 is shown in a plan view. 1j Segment 103 of the second signal exchange section 1032 2j As shown in the figure, in some non-limiting examples, the first signal switching section 103 1j First transmission region 1121 and second signal exchange section 103 2j The second transmission region 1122 can be with Figure 12A They are arranged in a similar array configuration.

[0356] In some non-limiting examples, the first transmission region 1121 may be shown having a first shape (including, but not limited to, a rounded square shape) that differs from the second shape (including, but not limited to, a star shape) of the second transmission region 1122. In some non-limiting examples, the first shape may have an area different from the second shape. In some non-limiting examples, the first shape may have a substantially the same area as the second shape.

[0357] The transmission regions 112 of the first signal exchange section 1031 and the second signal exchange section 1032 are shown in each segment 103 1j 103 2j It has Figure 15The array configuration and substantially uniform pitch in the document are for illustrative purposes and examples discussed herein only, and should not be considered as limiting in any way any of the size, pitch, orientation, and configuration of the transmission regions in the first signal exchange section 1031 or the second signal exchange section 1032.

[0358] In some non-limiting examples, the shape of the transmission region 112 in at least one signal exchange section 103 (including, but not limited to, substantially regular shapes, including, but not limited to, one of the following: substantially polygonal (including, but not limited to, one of the following: substantially quadrilateral (including, but not limited to, substantially rectangular (including, but not limited to, substantially square) and substantially triangular) and substantially elliptical (including, but not limited to, substantially circular)) may vary, including, but not limited to, one of the following: such that all transmission regions in the transmission region 112 have a common shape, and such that at least one transmission region in the transmission region 112 has a shape different from the shape of another transmission region in the transmission region 112.

[0359] In this disclosure, the term "polygon" generally refers to at least one of a shape, figure, closed boundary, and perimeter formed by a finite number of linear segments, and the term "non-polygon" generally refers to at least one of a non-polygonal shape, figure, closed boundary, and perimeter. In some non-limiting examples, a closed boundary formed by a finite number of straight line segments and at least one non-straight line (curved) segment may be considered a non-polygon.

[0360] Without wishing to be bound by any particular theory, it may be assumed that, relative to a display panel 100 having a closed boundary of a corresponding transmission region 112 defined by a non-polygonal corresponding transmission region 112, a display panel 100 having a closed boundary of a transmission region 112 defined by a corresponding transmission region 112 that is substantially regular in shape may exhibit a unique and non-uniform diffraction pattern that may adversely affect the ability to promote the mitigation of interference caused by the diffraction pattern.

[0361] Without being bound by a specific theory, it may be assumed that when the closed boundary of the transmission region 112 defined by the corresponding transmission region 112 includes at least one nonlinear (curved) segment, the EM signal incident on it and transmitted through it can exhibit a less distinctive (more uniform) diffraction pattern that helps to mitigate interference caused by the diffraction pattern.

[0362] In some non-limiting examples, a display panel 100 having a closed boundary of a transmission region 112 defined by a corresponding transmission region 112 that is substantially elliptical, including but not limited to circular, can further facilitate the mitigation of interference caused by diffraction patterns.

[0363] In some non-limiting examples, the transmission region 112 may be defined by a finite number of convex segments. In some non-limiting examples, at least some of these segments overlap at a concave notch (peak).

[0364] In some non-limiting examples, all vertices of at least one vertex of at least one of the vertices of a transmission region 112 having a substantially polygonal shape may have substantially rounded corners.

[0365] In some non-limiting examples, where there may be constraints on at least one of the aperture ratio of at least one transmission region 112 and at least one emission region 210 within at least one signal exchange portion 103, at least one transmission region 112 may be provided with a substantially irregular shape in order to increase at least one of the aperture ratio of at least one transmission region 112 and at least one emission region 210 within at least one signal exchange portion 103.

[0366] In some non-limiting examples, at least one operation of controlling, adjusting, and tuning the (integrated) PSF associated with the optoelectronic component 130 (including, but not limited to, the PSF of the optics of the optoelectronic component 130 and the PSF of the signal exchange section 103 that may be arranged behind the optoelectronic component 130) can affect the diffraction pattern of at least one of the image and the light pattern represented therein, and promote the ability to mitigate interference caused by such diffraction pattern, i.e., allow the optoelectronic component 130 to be able to: accurately receive and process such pattern, including but not limited to by applying processing techniques (including but not limited to imaging processing and optical processing), and allow a viewer of such pattern to discern the information contained therein through the display panel 100.

[0367] In some non-limiting examples, the PSF can be adjusted to some extent by wisely selecting at least one of the layout (including but not limited to size, shape, pitch, orientation, configuration and pattern) of the optoelectronic component 130 and the transmission region 112.

[0368] A series of experiments were designed to investigate aspects of the PSF of an optical system 420, which includes at least one signal exchange section 103 (which includes at least one transmission region 112), and the effects of various arrangements (including but not limited to size (including but not limited to aperture ratio), shape, orientation and pitch) of at least one transmission region 112 in at least one signal exchange section 103 thereon.

[0369] Those skilled in the art will understand that the sample specimen essentially comprises an opaque film having apertures corresponding to a plurality of transmissive regions 112 therein. The sample specimen is intended to simulate the positioning of the transmissive regions 112 in at least one signal exchange portion 103 of the display panel 100, wherein the transmissive regions 112 are distributed among at least one (sub)pixel 215 / 216. However, the sample specimen used in the experimental setup essentially does not have any emission regions 210 corresponding to the (sub)pixels 215 / 216.

[0370] The details of the layout of the transmission region 112 used in the sample specimens in this paper are listed in Table 1 below: Table 1

[0371] For illustrative purposes only, in Figures 16A to 16JJ In the sample specimen, the position of the transmission region 112 is shown as being distributed among a plurality of (sub)pixels 215 / 216, such that the position of at least one transmission region 112 in the sample specimen can be seen relative to the positioning of the (sub)pixels 215 / 216.

[0372] In the experiment, using Figure 5A The experimental setup involved projecting a point source 410 in the form of a laser pointer (the laser pointer was positioned at a distance of approximately 60 cm). D One point emits light of approximately 980 nm through the sample specimen, and an IR camera is used to record images to measure the diffraction pattern of each sample specimen.

[0373] Figure 17 The recorded images for each sample specimen are shown. As can be seen, each sample specimen produces a unique PSF distribution. Those skilled in the art will understand that various combinations of PSFs derived from different layouts of the signal exchange section 103 (including, but not limited to, the layout of the transmission region 112) can result in varying degrees of overlap, including, but not limited to, at least one of the following: partial overlap, complete overlap, and substantially no overlap of at least one of the main lobe and side lobes between the first PSF and the second PSF.

[0374] In some non-restrictive examples, such as Figure 18A As shown in Plane 18 a1 and 18 a2 The simplified representation shown reproduces the distribution of the first PSF exhibited by sample A3 and the distribution of the second PSF exhibited by sample A5. The side lobes of the first PSF are 1812. a The side lobe of the second PSF 1822 aThey can be largely non-overlapping, as shown in Plan 18. a3 As shown, it illustrates the distribution of the first PSF (shown as a solid outline) superimposed on the distribution of the second PSF (shown as a dashed outline) in a planar diagram. The main lobe of the first PSF is 181l. a The main lobe of the second PSF is 1821. a It exhibits partial but nearly complete overlap.

[0375] In some non-restrictive examples, such as Figure 18B As shown in Figure 18, the distributions of the first PSF exhibited by sample E2 and the second PSF exhibited by sample E4 are respectively plotted in planar graph 18. b1 and 18 b2 The simplified representation shown is reproduced in the figure. The sidelobe of the first PSF is 1812. b The side lobe of the second PSF 1822 b It can show a certain degree of but not complete overlap, as in planar diagram 18. b3 As shown, the distribution of the first PSF (shown as a solid outline) superimposed on the distribution of the second PSF (shown as a dashed outline) is illustrated in a planar diagram. As shown, the side lobes of the first PSF are 1812. b The first subset and the sidelobe of the second PSF 1822 b The first subset overlaps, while the sidelobe of the first PSF is 1812. b The second subset does not correspond to the sidelobe of the second PSF 1822 b The second subset overlaps. The main lobe of the first PSF is 1811. b The main lobe of the second PSF is 1821. b It exhibits partial but nearly complete overlap.

[0376] In some non-restrictive examples, such as Figure 18C As shown in Figure 18, the distributions of the first PSF exhibited by sample F3 and the second PSF exhibited by sample F4 are respectively plotted in planar graph 18. c1 Reproduced in the simplified representation shown in 18C2. Each sidelobe of the first PSF 1812 c This corresponds to the side lobe 1822 of the second PSF. c This includes, but is not limited to, at least partially overlapping with the side lobes of the second PSF, as shown in Planar Figure 18. c3 As shown, it illustrates the distribution of the first PSF (shown as a solid outline) superimposed on the distribution of the second PSF (shown as a dashed outline) in a planar diagram. The main lobe of the first PSF is 1811. b The main lobe of the second PSF is 1821. b It exhibits partial but nearly complete overlap.

[0377] In some non-restrictive examples, such as Figure 18D As shown in Figure 18, the distributions of the first PSF exhibited by sample D4 and the second PSF exhibited by sample E6 are respectively plotted in planar graph 18. d1 and 18 d2 The simplified representation shown is reproduced in the figure. The main lobe of the first PSF is 1811. d It can be used with the main lobe of the second PSF 1821 d They are fundamentally different, as shown in plan 18. d3 As shown, it illustrates, in planar view, the distribution of the first PSF (shown as a solid outline) superimposed on the distribution of the second PSF (shown as a dashed outline). The sidelobe pattern of the first PSF also differs from that of the second PSF, such that the sidelobes of the first PSF are 1812. d The first subset and the sidelobe of the second PSF 1822 d The first subset overlaps, while the sidelobe of the first PSF is 1821. d The second subset does not correspond to the sidelobe of the second PSF 1822 d The second subset overlaps. The main lobe of the first PSF is 1811. a The side lobe of the second PSF 1822 d The subsets of show a certain degree of overlap.

[0378] exist Figures 18A to 18D The text omits information due to the generally low SNR level. Figure 17 Indistinguishable diffraction points in the recorded images.

[0379] In some non-limiting examples, the PSF of the display panel 100 may include components related to its various aspects, which may be substantially independent of the layout (including, but not limited to, at least one of the number, size (including, but not limited to, aperture ratio), shape, orientation and pitch of at least one transmissive region 112). In some non-limiting examples, such aspects may include at least one of the following: the presence of a partially transmissive layer (including, but not limited to, at least one of, a first electrode 1920, at least one semiconductive layer 330, a second electrode 340, an auxiliary electrode 2850, a lower layer 2610, and an upper cover layer 2170), including, but not limited to, a change in refractive index between such layers; nontransmissive and partially transmissive elements (including, but not limited to, TFT structure 2206) in the display panel 100 and extending laterally in at least one transmissive region 112, and the presence of a partially transmissive edge around the boundary of the aperture of at least one transmissive region 112 formed by depositing a patterned coating 310 thereon, such that its exposed layer 11 is substantially free of the sealing coating 2140 of the deposited layer 331 of the deposited material 2431 (formed by the difference in lateral orientation between the boundary and the boundary of the FMM used to define the place where the patterned coating 310 is deposited); and the presence of at least one granular structure 2150 on the exposed layer surface 11 of the patterned coating 310.

[0380] Figure 19 An example of a portion of a display panel 100 is schematically illustrated, which includes a transmissive region 112 formed thereon by depositing a patterned coating 310, the transmissive region being located at the interface between the patterned coating 310 in a first portion 1901 and a deposited layer 331 in a second portion 1902.

[0381] The patterned coating 310 in the first portion 1901 may be surrounded by the deposited layer 331 on all sides, such that the first portion 1901 may have a boundary defined by another edge 1915 of the patterned coating 310 in the lateral orientation along each lateral axis. In some non-limiting examples, the patterned coating edge 1915 in the lateral orientation may be defined by the periphery of the first portion 1901 in such orientation.

[0382] In some non-limiting examples, the deposition layer 331 may have a boundary defined by another edge 1935 of the deposition layer 331 in the lateral orientation along each lateral axis. In some non-limiting examples, the laterally oriented deposition layer edge 1935 may be defined by its periphery in that orientation.

[0383] In some non-limiting examples, at least a portion of the deposited layer 331 may correspond to the second electrode 340 (not shown) of the emission region 210. In some non-limiting examples, the active region 1908 of each emission region 210 may be defined in the longitudinal direction by the first electrode 1920 (schematically shown) and the second electrode 340, and in the lateral direction by the presence of each of the first electrode 1920, the second electrode 340, and at least one semiconducting layer 330 therebetween (in some non-limiting examples, they may overlap laterally).

[0384] In some non-restrictive examples, Figure 19 In this context, the boundary of the defined transmission region 112 can therefore be considered to substantially correspond to the edge of the sedimentary layer 1935, such that the region between the boundary of the active region 1908 and the edge of the sedimentary layer 1935 can correspond to the deposition applied (DA) region 1960, and the portion of the first part 1901 surrounded by the edge of the sedimentary layer 1935 can correspond to the non-deposition (DF) region 1965.

[0385] Although DF region 1965 may be shown as being surrounded by DA region 1960, those skilled in the art will understand that in some non-limiting examples, DA region 1960 and DF region 1965 may be positioned such that one of DA region 1960 and DF region 1965 may be adjacent to the other of DA region 1960 and DF region 1965, including but not limited to intersecting with and being surrounded by it.

[0386] In some non-limiting examples, the transmission region 112, including the DA region 1960 and the DF region 1965, can be implemented by an aperture 122 defined by a first defining layer 311 and a second defining layer 321. In some non-limiting examples, the second layer aperture boundary 323 may be entirely located within the first layer aperture boundary 313, such that the second layer aperture boundary 323 of the second layer aperture 322 can surround the DF region 1965, which is substantially free of deposited material 2431. Furthermore, in some non-limiting examples, the remaining portion within the first layer aperture boundary 313 of the first layer aperture 312 can be considered the DA region 1960, wherein a deposition layer 331 comprising deposited material 2431 is provided, such that the DA region 1960 substantially surrounds the DF region 1965.

[0387] In some non-limiting examples, the DA region 1960 (including, but not limited to, the portion thereover of the patterned coating 310) may exhibit a different degree of transmittance than the DF region 1965, such that the boundary defining the transmission region 112 may thus correspond to the edge 1915 of the patterned coating, and the transmittance may vary across the transmission region 112.

[0388] In some non-limiting examples, the transmittance through DF region 1965 may be at least the transmittance through DA region 1960, such that transmission region 112 may include two non-overlapping regions with different transmittances. In some non-limiting examples, DA region 1960 may be considered to correspond to a "gray area".

[0389] In some non-limiting examples, as shown, prior to the deposition of the deposited material 2431, during the vapor deposition process, the absence of the deposited material 2431 in the DF region 1965 can be achieved by ensuring that such material cannot be deposited thereon, including but not limited to depositing patterned material 2311 (including but not limited to NIC) in the DF region 1965 to form a patterned coating 310 in a pattern corresponding to the boundary 323 of the hole 322 defining the DF region 1965, including but not limited to interpolating a shadow mask 2315 therebetween, which corresponds to the boundary 323 of the hole 322 defining the DF region 1965.

[0390] In some non-limiting examples, when the patterned coating 310 includes the NIC, the pattern of the patterned material 2311 may substantially correspond to the boundary 323 of the (front panel) second layer hole 322, such that when the deposited material 2431 is subsequently deposited, the deposited material 2431 tends not to deposit where the patterned coating 310 has been deposited, and tends to accumulate to form a deposited layer 330 in areas where there is substantially no patterned coating 310.

[0391] In some non-limiting examples, the pattern of the deposited layer 331 can be specified by depositing the deposited material 2431 in a pattern substantially opposite to that of the DF region 1965 through the holes of a shaded mask.

[0392] In some non-limiting examples, the pattern of the deposited layer 331 may be specified by depositing the deposited material 2431 and then removing the deposited material 2431 with a pattern corresponding to the DF region 1965 (including but not limited to photolithography, chemical etching and laser ablation).

[0393] Biometric authentication In some non-limiting examples, user equipment 110 may accommodate at least one EM signal 131 for transmission. t Transmitter 130 outside of face 101 t In some non-limiting examples, user equipment 110 may accommodate at least one received EM signal 131 from outside the face 101. r At least one detector / receiver 130 r In some non-limiting examples, at least one received EM signal 131 rIt can be transmitted with at least one EM signal 131 reflected from the outer surface (including but not limited to user 10). t The same applies, including but not limited to, for use in biometric authentication by its facial recognition system.

[0394] Without wishing to be bound by any particular theory, it can be assumed that, with the detector / receiver 130 under the display... d Compared to the diffraction caused at the location of transmitter 130 under the display, the diffraction at that location is different. t The diffraction caused at the location of the sensor can have a substantial impact on the image, due to the diffraction caused by the transmitter 130 under the display. t The emitted light returns to the display under the detector / receiver 130. d The total distance that must be traveled (including, but not limited to, traveling to and from object 10) can, in some non-limiting examples, be on the order of a fraction of a meter to a few meters. Therefore, in some non-limiting examples, this includes a non-display transmitter 130. t The display panel 100 of the detector / receiver 130a under the display may be suitable for applications requiring reduced diffraction on the transmitter side and consequently requiring enhanced overall image quality.

[0395] That said, in some non-limiting examples, there may be scenarios that require a seamless user experience and substantial aesthetic appeal from the display panel 100. In some non-limiting examples, the transmitter 130 t Each of the detectors 130a may be arranged behind the display panel 100 and corresponds to the signal exchange portion 103 including at least one transmission area 112.

[0396] In some non-restrictive examples, with transmitter 130 t The associated signal exchange section 103 may be different from the detector 130. d The associated signal switching section 103 enables different diffraction characteristics to be assigned to the transmitter 130. t and detector 130 d By doing so, in some non-limiting examples, with transmitter 130 t and detector 130 d Compared to scenarios where both are arranged after substantially the same signal exchange section 103 (including but not limited to common signal exchange section 103), additional information or data can be obtained. In some non-limiting examples, such additional information or data can be used to verify and supplement data obtained by detecting transmitted light, and thus facilitate data processing.

[0397] In some non-limiting examples, these signal exchange portions 103 may differ in at least one of the following: the layout of at least one transmission region 112, including but not limited to at least one of its size (including but not limited to aperture ratio), shape, orientation and pitch; and the layer structure within at least one transmission region 112, including but not limited to the presence of partial transmission layers, opaque components and granular structures 2150, and their positions within the transmission region 112.

[0398] Methods and Actions Now go to Figure 20 A flowchart, generally shown as 2000, illustrates example actions taken for operating an electronic device 110 including a display panel 100 and a plurality of optoelectronic components 130. The optoelectronic components 130 may be configured to perform at least one of the following operations: emitting and receiving light within at least one wavelength range of the EM spectrum (including, but not limited to, at least one of the visible spectrum, UV spectrum, IR spectrum, NIR spectrum, and portions thereof). The display panel 100 may include at least one signal exchange portion 103, which includes at least one transmission region 112. In some non-limiting examples, a first optoelectronic component of the optoelectronic components 130 may be arranged behind the at least one signal exchange portion 130 such that light emitting and receiving at least one of the operations performed by the first optoelectronic component 130 may pass through the at least one transmission region 112.

[0399] An example action 2010 is to process initial outputs from multiple optoelectronic components 130 to produce processed outputs. In some non-limiting examples, each initial output may include diffraction information. In some non-limiting examples, the initial output may be a diffraction image, including but not limited to a raw image, an RGB image, a depth image, and an infrared image.

[0400] In some non-limiting examples, the diffraction information contained in the initial output of optoelectronic component 130 may be related to the (integrated) PSF associated with optoelectronic component 130. In some non-limiting examples, one optoelectronic component 130 may have an associated (integrated) PSF that is different from the (integrated) PSFs associated with other optoelectronic components 130. Therefore, multiple optoelectronic components 130 may be endowed with different diffraction characteristics, such that the initial output from one optoelectronic component 130 may be different from the initial output from the other optoelectronic components 130.

[0401] In some non-limiting examples, the PSF associated with optoelectronic component 130 may include a component associated with the optics of optoelectronic component 130. In some non-limiting examples, the PSF associated with optoelectronic component 130 may include a component associated with at least one transmission region (including, but not limited to, its layout) of signal exchange section 103, behind which optoelectronic component 130 may be arranged.

[0402] In some non-limiting examples, more than one optoelectronic component 130 may be arranged behind at least one signal exchange section 103, such that each optoelectronic component 130 may be associated with a PSF, which may include a component associated with a transmission region 112 of the corresponding signal exchange section 103.

[0403] In some non-limiting examples, processing may include processing the initial output of the other of the first optoelectronic component 1301 and the second optoelectronic component 1302 using the PSF of one of the first optoelectronic component 1301 and the second optoelectronic component 1302. In some non-limiting examples, processing may be performed using a PSF, which may be at least one of measurements, estimations, and calculations of PSF associated with each optoelectronic component 130. In some non-limiting examples, processing may be implemented by performing deconvolution calculations using the PSF. In some non-limiting examples, processing may be implemented by applying filtering, which may be deconvolution filtering, including but not limited to Wiener filtering. In some non-limiting examples, filtering may be selected at least in part based on the PSF. In some non-limiting examples, processing may take into account at least one of the following: system noise (including but not limited to component-related noise and background noise), imaging conditions, other optical effects (including but not limited to aberrations and scattering), and human visual perception.

[0404] In some non-limiting examples, action 2010 may include action 2014 to correct the initial output, thereby generating a corrected output.

[0405] In some non-limiting examples, in action 2014, the correction may include diffraction correction. In some non-limiting examples, diffraction correction may be performed to correct diffraction caused by the presence of the display panel 100 in the optical path of the optoelectronic component 130.

[0406] In some non-limiting examples, correction may be performed individually for the initial output of each optoelectronic component 130. In some non-limiting examples, correction may be performed by cross-referencing the initial outputs of multiple optoelectronic components 130 with each other.

[0407] In some non-limiting examples, correction may use the PSF of one of the first optoelectronic component 1301 and the second optoelectronic component 1302 to correct diffraction contained in the initial output of the other of the first optoelectronic component 1301 and the second optoelectronic component 1302. In some non-limiting examples, correction may be performed using a PSF, which may be at least one of measurements, estimations, and calculations of a PSF associated with each optoelectronic component 130. In some non-limiting examples, correction may be achieved by performing deconvolution calculations using a PSF. In some non-limiting examples, correction may be achieved by applying a filter, which may be a deconvolution filter, including but not limited to Wiener filtering. In some non-limiting examples, the filter may be selected at least in part based on the PSF. In some non-limiting examples, correction may take into account at least one of the following: system noise (including but not limited to component-related noise and background noise), imaging conditions, other optical effects (including but not limited to aberrations and scattering), and human visual perception.

[0408] In some non-limiting examples, action 2010 may include action 2016 to combine the correction output, thereby generating a combined output after action 2014.

[0409] In some non-limiting examples, in action 2016, the correction output from each optoelectronic component 130 can be combined by at least one of a fusion process and a splicing process, which in some non-limiting examples may involve alignment and mixing.

[0410] In some non-limiting examples, action 2010 may include action 2012 to preprocess the initial output from the plurality of optoelectronic components 130. In some non-limiting examples, the initial output may be preprocessed by performing at least one of the following: noise reduction, contrast enhancement, color reconstruction, filtering, and image resizing.

[0411] In some non-limiting examples, action 2010 may include action 2018, which postprocesses the combined output as a result of combined action 2016. In some non-limiting examples, the combined output may be postprocessed by performing at least one of the following: noise reduction, contrast enhancement, color reconstruction, filtering, and image resizing.

[0412] In some non-limiting examples, action 2010 may be followed by action 2020 to display the output of the processing on a display panel. In some non-limiting examples, the output of the processing may be displayed by display panel 100. In some non-limiting examples, the output of the processing may be at least one of the following: image file, video file, 3D image, and 3D video.

[0413] Layered devices This disclosure relates generally to a layered semiconductor device 2100, and more specifically to an optoelectronic device 2200. The optoelectronic device 2200 may generally encompass any device 2100 that converts an electrical signal into light in the form of photons and performs the reverse conversion. In some non-limiting examples, the optoelectronic device 2200 may be an organic light-emitting diode (OLED).

[0414] Those skilled in the art will understand that while this disclosure relates to optoelectronic device 2200, its principles can be applied in some non-limiting examples to any panel having multiple layers, including but not limited to at least one layer of conductive deposited material 2431, which is included as a thin film, and in some non-limiting examples, electromagnetic (EM) signals can partially and completely pass through (including but not limited to) one of the multiple layers at a non-zero angle relative to the plane of at least one of these layers.

[0415] Now go to Figure 21 This figure may show a cross-sectional view of an example layered semiconductor device 2100. In some non-limiting examples, such as Figure 22 As shown in more detail below, device 2100 may include multiple layers deposited on substrate 10.

[0416] A lateral axis, designated as the X-axis, may be shown together with a longitudinal axis, designated as the Z-axis. A second lateral axis, designated as the Y-axis, may be shown substantially transverse to both the X-axis and the Z-axis. At least one of the lateral axes may define the lateral orientation of device 2100. A longitudinal axis may define the longitudinal orientation of device 2100.

[0417] The layers of device 2100 may extend in a lateral orientation substantially parallel to the plane defined by the lateral axis. Those skilled in the art will understand that, in some non-limiting examples, Figure 21 The representation of a substantially flat surface shown may be an abstract concept for illustrative purposes. In some non-limiting examples, there may be localized substantially flat layers of varying thicknesses and sizes in the lateral extent of device 2100, and in some non-limiting examples, at least one substantially non-existent layer separated by uneven transition regions (including lateral gaps and even interruptions).

[0418] Therefore, although for illustrative purposes, device 2100 may be shown in its longitudinal orientation as a substantially layered structure of substantially parallel planar layers, such device 2100 may locally exemplify different morphologies to define features, each of which may substantially exhibit the layered profile in the longitudinal orientation.

[0419] In some non-limiting examples, the lateral orientation of the exposed surface 11 of the device 2100 may include a first portion 1901 and a second portion 1902. In some non-limiting examples, the second portion 1902 may include a portion of the exposed surface 11 of the device 2100 located outside the first portion 1901.

[0420] like Figure 21 As shown, the layer of device 2100 may include a substrate 10 and a patterned coating 310 disposed on at least a portion of its laterally oriented exposed layer surface 11. In some non-limiting examples, the patterned coating 310 may be confined in a first portion 1901 in its lateral extent, and a deposited layer 331 may be disposed as a sealing coating 2140 on the exposed layer surface 11 of device 2100 in its laterally oriented second portion 1902.

[0421] In some non-limiting examples, at least one particulate structure 2150 may be disposed as a discontinuous layer 2160 on the exposed surface 11 of the patterned coating 310. In some non-limiting examples, although not shown, at least one of the patterned coating 310, the deposited layer 331, and at least one particulate structure 2150 may be deposited on a layer other than the substrate 10 (lower layer 2610), including but not limited to an intermediary layer between the substrate 10 and at least one of the patterned coating 310, the deposited layer 331, and at least one particulate structure 2150. In some non-limiting examples, the lower layer 2610 may include at least one of an alignment layer and an organic support layer.

[0422] In some non-limiting examples, at least one of the patterned coating 310, the deposited layer 331, and at least one particulate structure 2150 may be covered by at least one overlay 2170.

[0423] In some non-limiting examples, the overlay 2170 may include at least one of an encapsulation layer and an optical coating. In some non-limiting examples, the encapsulation layer may include at least one of a glass cover, a barrier film, a barrier adhesive, a barrier coating, an encapsulation layer, and a thin-film encapsulation (TFE) layer provided to encapsulate device 2100. In some non-limiting examples, the optical coating may include at least one of optical and structural coatings and at least one component thereof, including but not limited to polarizers, color filters, anti-reflective coatings, anti-glare coatings, cover glass, and optically clear adhesives (OCAs).

[0424] In some non-limiting examples, at least one of the substantially thin patterned coating 310 in the first portion 1901 and the deposited layer 331 in the second portion 1902 may provide a substantially flat surface on which the overcoat 2170 may be deposited. In some non-limiting examples, providing such a substantially flat surface for coating the overcoat 2170 may increase its adhesion to such a surface.

[0425] In some non-limiting examples, the optical coating can be used to modulate the optical properties of light transmitted, emitted, and absorbed by the device 2100, including but not limited to plasmon modes. In some non-limiting examples, the optical coating can be used as at least one of an optical filter, a refractive index matching coating, an optical external coupling coating, a scattering layer, a diffraction grating, and portions thereof.

[0426] In some non-limiting examples, the optical coating can be used to modulate at least one optical microcavity effect in device 2100 by adjusting, but not limited to, at least one of the total optical path length and its refractive index. At least one optical property of device 2100 can be affected by adjusting at least one optical microcavity effect (including, but not limited to, output light) (including, but not limited to, at least one of its intensity angular dependence and its wavelength shift). In some non-limiting examples, the optical coating may be a non-electric component, i.e., the optical coating may not be configured to conduct and transmit at least one of current during normal device operation.

[0427] In some non-limiting examples, the optical coating may be formed of any deposited material 2431, and in some non-limiting examples, any mechanism for depositing the deposited layer 331 as described herein may be employed.

[0428] optoelectronic devices substrate In some non-limiting examples, substrate 10 may include a bottom substrate 315. In some non-limiting examples, the bottom substrate 315 may be formed of a material suitable for its use, including, but not limited to, at least one of: inorganic materials, including, but not limited to, at least one of: Si, glass, metals (including, but not limited to, metal foil), sapphire, and other inorganic materials; and organic materials, including, but not limited to, polymers, including, but not limited to, at least one of: polyimide and Si-based polymers. In some non-limiting examples, the bottom substrate 315 may be one of: rigid or flexible. In some non-limiting examples, substrate 10 may be defined by at least one flat surface. In some non-limiting examples, substrate 10 may have at least one exposed layer surface 11 of the remaining front plate 301 components of the support device 2100, including, but not limited to, at least one of a first electrode 1920, at least one semiconductive layer 330, and a second electrode 340.

[0429] In some non-limiting examples, such a surface may be at least one of an organic surface and an inorganic surface.

[0430] In some non-limiting examples, in addition to the bottom substrate 315, the substrate 10 may also include at least one of the following supported on the exposed layer surface 11 of the bottom substrate 315: at least one of organic and inorganic layers (not shown and not specifically described herein).

[0431] In some non-limiting examples, such an additional layer may include at least one organic layer, which may be at least one of the following: including, replacing, and supplementing at least one of the semiconductive layers 330.

[0432] In some non-limiting examples, such an additional layer may include at least one inorganic layer, which may contain at least one electrode, which in some non-limiting examples may be at least one of the following: including, replacing and supplementing at least one of the first electrode 1920 and the second electrode 340.

[0433] Backplane and the TFT structure contained therein In some non-limiting examples, such an additional layer may include a backplane 302. In some non-limiting examples, the backplane 302 may include at least one of the following: power supply circuitry and switching elements for driving device 2100, including but not limited to at least one of the following: at least one electronic thin-film transistor (TFT) structure 2206 and at least one component thereof which may be formed by photolithography.

[0434] In some non-limiting examples, the backplane 302 of substrate 10 may include at least one electronic device, including but not limited to optoelectronic components, including but not limited to transistors, resistors, and capacitors, such as those components that can support device 2100 as one of active matrix and passive matrix devices 2100. In some non-limiting examples, this structure may be a TFT structure 2206.

[0435] Non-limiting examples of TFT structure 2206 include one of the following: top gate, bottom gate, n-type and p-type TFT structures 2206. In some non-limiting examples, TFT structure 2206 may incorporate one of the following: amorphous Si (a-Si), indium gallium zinc oxide (IGZO) and low-temperature polycrystalline Si (LTPS).

[0436] First electrode The first electrode 1920 may be deposited above the substrate 10. In some non-limiting examples, the first electrode 1920 may be electrically coupled to at least one of a terminal of the power supply 2204 and ground. In some non-limiting examples, the first electrode 1920 may be coupled by at least one driving circuit, which in some non-limiting examples may incorporate at least one TFT structure 2206 in the backplane 302 of the substrate 10.

[0437] In some non-limiting examples, the first electrode 1920 may include one of an anode and a cathode. In some non-limiting examples, the first electrode 1920 may be an anode.

[0438] In some non-limiting examples, the first electrode 1920 can be formed by depositing at least one thin conductive film over a portion of the substrate 10. In some non-limiting examples, a plurality of first electrodes 1920 may be spaced together and arranged laterally upwards on the substrate 10. In some non-limiting examples, at least one of these at least one first electrode 1920 may be deposited over a portion of the TFT insulating layer 307 spaced together and arranged laterally. If so, in some non-limiting examples, at least one of these at least one first electrode 1920 may extend through an opening in the corresponding TFT insulating layer 307 to be electrically coupled to the electrodes of the TFT structure 2206 in the backplane 302.

[0439] In some non-limiting examples, at least one of the first electrode 1920 and at least one of its thin films may comprise a variety of materials, including but not limited to at least one metallic material, including but not limited to at least one of magnesium (Mg), aluminum (Al), calcium (Ca), zinc (Zn), silver (Ag), cadmium (Cd), barium (Ba) and ytterbium (Yb), including but not limited to alloys comprising any of such materials, at least one metal oxide, including but not limited to TCO, including but not limited to ternary compositions, such as but not limited to at least one of FTO, IZO and ITO, in different proportions, including but not limited to combinations of any number of them in at least one layer, wherein any at least one layer may be, but is not limited to, a thin film.

[0440] Second electrode The second electrode 340 may be deposited over at least one semiconductive layer 330. In some non-limiting examples, the second electrode 340 may be electrically coupled to at least one of a terminal of the power supply 2204 and ground. In some non-limiting examples, the second electrode 340 may be coupled by at least one driving circuit, which in some non-limiting examples may incorporate at least one TFT structure 2206 in the backplane 302 of the substrate 10.

[0441] In some non-limiting examples, the second electrode 340 may include one of an anode and a cathode. In some non-limiting examples, the second electrode 340 may be a cathode.

[0442] In some non-limiting examples, the second electrode 340 can be formed by depositing a deposition layer 331 (as at least one thin film in some non-limiting examples) over at least a portion of a semiconductive layer 330.

[0443] In some non-limiting examples, there may be a plurality of second electrodes 340 arranged in a certain space above and to the side of at least one semiconductive layer 330.

[0444] In some non-limiting examples, the second electrode 340 may extend partially over the patterned coating 310 in the transition region 2245.

[0445] In some non-limiting examples, at least one second electrode 340 may comprise a variety of materials, including but not limited to: at least one metallic material, including but not limited to at least one of Mg, Al, Ca, Zn, Ag, Cd, Ba, and Yb, including but not limited to alloys comprising at least one of such materials; at least one metal oxide, including but not limited to TCO, including but not limited to ternary compositions, such as but not limited to at least one of FTO, IZO, and ITO, including but not limited to zinc oxide (ZnO) in different proportions and other oxides comprising at least one of In and Zn in at least one layer; and at least one non-metallic material, wherein any at least one may be, but is not limited to, a thin conductive film. In some non-limiting examples, for Mg:Ag alloys, the alloy composition may be in the range of about 1:9 to 9:1 by volume.

[0446] In some non-limiting examples, the deposition of the second electrode 340 may be performed using either an open-mask or maskless deposition process.

[0447] In some non-limiting examples, the second electrode 340 may comprise multiple such coatings. In some non-limiting examples, such coatings may be different coatings disposed on top of each other.

[0448] In some non-limiting examples, the second electrode 340 may comprise a Yb / Ag bilayer coating. In some non-limiting examples, this bilayer coating may be formed by depositing a Yb coating followed by an Ag coating. In some non-limiting examples, the thickness of this Ag coating may exceed the thickness of the Yb coating.

[0449] In some non-limiting examples, the second electrode 340 may be a multi-coated electrode 340 comprising one of the following: a metal coating and an oxide coating.

[0450] In some non-limiting examples, the second electrode 340 may comprise fullerene and Mg.

[0451] In some non-limiting examples, such a coating can be formed by depositing a fullerene coating followed by a Mg coating. In some non-limiting examples, the fullerene can be dispersed within the Mg coating to form a fullerene-containing Mg alloy coating. Non-limiting examples of such coatings are described in at least one of the following: U.S. Patent Application Publication No. 2015 / 0287846, published October 8, 2015, and PCT International Application No. PCT / IB2017 / 054970, filed August 15, 2017, and published as WO2018 / 033860 on February 22, 2018.

[0452] Semiconducting layer In some non-limiting examples, at least one semiconductive layer 330 may include multiple layers 2231, 2233, 2235, 2237, and 2239. In some non-limiting examples, any one of these layers may be in thin film form and arranged in a stacked configuration, and may include, but is not limited to, at least one of hole injection layer (HIL) 2231, HTL 2233, emitter layer (EML) 2235, ETL 2237, and electron injection layer (EIL) 2239.

[0453] In some non-limiting examples, at least one semiconducting layer 330 may form a “series” structure comprising a plurality of EMLs 2235. In some non-limiting examples, such a series structure may also include at least one charge generating layer (CGL).

[0454] Those skilled in the art will readily understand that the structure of device 2200 can be altered by omitting or combining at least one of the semiconductive layers 2231, 2233, 2235, 2237, and 2239.

[0455] In some non-limiting examples, any of layers 2231, 2233, 2235, 2237, and 2239 of at least one semiconducting layer 330 may include any number of sublayers. In some non-limiting examples, any of such layers 2231, 2233, 2235, 2237, and 2239 (including, but not limited to, their sublayers) may contain mixtures and compositional gradients. In some non-limiting examples, although not shown, device 2200 may include at least one layer comprising either an inorganic material or an organometallic material, and is not necessarily limited to a device 2200 composed solely of organic materials. In some non-limiting examples, device 2200 may include at least one quantum dot (QD).

[0456] In some non-limiting examples, HIL 2231 may be formed using a hole injection material that facilitates hole injection at the anode.

[0457] In some non-limiting examples, hole transport materials can be used to form HTL 2233, and in some non-limiting examples, the hole transport material can exhibit high hole mobility.

[0458] In some non-limiting examples, electron transport materials can be used to form ETL 2237, and in some non-limiting examples, the electron transport materials can exhibit high electron mobility.

[0459] In some non-limiting examples, the EIL 2239 may be formed using an electron injection material that facilitates electron injection at the cathode.

[0460] In some non-limiting examples, at least one EML 2235 may be formed by doping the host material with at least one emitter material. In some non-limiting examples, the emitter material may be at least one of a fluorescent emitter material, a phosphorescent emitter material, and a thermally activated delayed fluorescence (TADF) emitter material.

[0461] In some non-limiting examples, the emitter material may be one of an R (red) emitter material, a G (green) emitter material, and a B (blue) emitter material, that is, an emitter material that promotes the emission of R (red), G (green), and B (blue) light respectively.

[0462] In some non-limiting examples, device 2200 may be an OLED, wherein at least one semiconducting layer 330 may include at least one EML 2235 interposed between conductive thin-film electrodes 1920, 340, whereby, when a potential difference is applied between them, holes may be injected into at least one semiconducting layer 330 via an anode and electrons may be injected into at least one semiconducting layer 330 via a cathode to migrate toward at least one EML 2235 and combine to emit light in the form of photons.

[0463] In some non-limiting examples, device 2200 may be an electroluminescent QD device, wherein at least one semiconducting layer 330 may include an active layer having at least one QD. When current is supplied to the first electrode 1920 and the second electrode 340 by power supply 2204, light (including but not limited to the form of photons) may be emitted from the active layer comprising at least one semiconducting layer 330 between them.

[0464] In some non-limiting examples, including cases where device 2200 includes an illumination panel, the entire lateral orientation of device 2200 may correspond to a single emitting element. Thus, Figure 22 The substantially planar cross-sectional profile shown may extend substantially along the entire lateral orientation of device 2200, such that light is emitted from the device substantially along the entire lateral range of device 2200. In some non-limiting examples, such a single emitting element may be driven by a single driving circuit of device 2200.

[0465] In some non-limiting examples, including when device 2200 includes a display module, the lateral orientation of device 2200 may be subdivided into a plurality of emission regions 210 of device 2200, wherein in each emission region 210, the longitudinal orientation of its structure allows light to be emitted from it when energized.

[0466] Those skilled in the art will readily understand that the structure of the device 2200 can be altered by introducing at least one additional layer (not shown) at a suitable location within the stack of at least one semiconducting layer 330, the additional layer including but not limited to at least one of the following: hole blocking layer (HBL) (not shown), electron blocking layer (EBL) (not shown), charge transport layer (CTL) (not shown), and charge injection layer (CIL) (not shown).

[0467] In some non-limiting examples, the patterned coating 310 may be formed simultaneously with at least one semiconductive layer 330. In some non-limiting examples, at least one material used to form the patterned coating 310 may also be used to form at least one semiconductive layer 330. In some non-limiting examples, the EIL 2237 of at least one semiconductive layer 330 may be a patterned coating 310 that may be deposited in a first portion 1901 and a second portion 1902 during the deposition of at least one semiconductive layer 330. EIL 2239 may then be selectively deposited in the emission region 210 of the second portion 1902 above the EIL 2237, such that the exposed surface 11 of the EIL 2237 in the first portion 1901 may be substantially free of EIL 2239. The exposed surface 11 of EIL 2239 in emitter region 210 and the exposed surface of EIL 2237, which serves as a patterned coating 310, can then be exposed to the vapor flux 2432 of deposited material 2431 to form a sealing coating 2140 of deposited layer 331 on EIL 2239 in second portion 1902 and a discontinuous layer 2160 of deposited material 2431 on EIL 2237 in first portion 1901. In this non-limiting example, several stages for manufacturing device 2200 can be reduced.

[0468] Launch area exist Figure 22 The diagram shows a simplified block diagram of the emission region 210, as viewed from the longitudinal orientation of the (sub)pixels 215 / 216 of the example optoelectronic device 2200, according to the present disclosure. In some non-limiting examples, the example optoelectronic device may be an electroluminescent device 2200, including but not limited to an OLED, and the emission region is surrounded by at least one non-emission region 1911.

[0469] Within the emission region 210, the device 2200 may include a substrate 10 having a front panel 301 comprising multiple layers, namely a first electrode 1920, at least one semiconducting layer 330, and a second electrode 340. In some non-limiting examples, the front panel 301 may provide a mechanism for emitting light (including but not limited to photons).

[0470] In some non-limiting examples, various coatings on this device 2200 can be formed by a vacuum-based deposition process.

[0471] In some non-limiting examples, the first electrode 1920 and the second electrode 340 of the emitting region 210 of device 2200 may be electrically coupled to power supply 2204. When coupled in this way, the emitting region 210 may emit light (including but not limited to photons), as described herein.

[0472] In some non-limiting examples, including where the OLED device 2200 may include a display module, the lateral orientation of the device 2200 may be subdivided into a plurality of emission regions 210 of the device 2200, wherein in each of the emission regions 210, the longitudinal orientation of the structure of the device 2200 is such that light is emitted from it when energized.

[0473] In some non-limiting examples, each emitting region 210 may have an associated pair of electrodes 1920, 340 (one of which may act as an anode and the other as a cathode) and at least one semiconducting layer 330 between them. Such emitting regions 210 may emit light at a given wavelength spectrum and may correspond to one of pixel 215 and its sub-pixels 216. In some non-limiting examples, multiple sub-pixels 216, each corresponding to light of a different wavelength (range) and emitting that light, may collectively form pixel 215.

[0474] In some non-limiting examples, the wavelength spectrum may correspond to (but is not limited to) colors in the visible spectrum. Due to the different wavelengths (ranges) involved, light of a first wavelength (range) emitted by the first sub-pixel 216 of pixel 215 may be performed differently from light of a second wavelength (range) emitted by the second sub-pixel 216 of that pixel.

[0475] In some non-limiting examples, the active region 1908 of each emission region 210 may be defined in the longitudinal direction by the first electrode 1920 and the second electrode 340, and in the lateral direction by the presence of each of the first electrode 1920, the second electrode 340 and at least one semiconducting layer 330 therebetween, i.e., the first electrode 1920, the second electrode 340 and at least one semiconducting layer 330 therebetween laterally overlap.

[0476] Those skilled in the art will understand that the lateral orientation of the emission region 210, and therefore the lateral boundary of the active region 1908, may not correspond to the entire lateral orientation of at least one of the first electrode 1920, the second electrode 340, and at least one semiconductive layer 330 therebetween. Instead, in some non-limiting examples, since at least one semiconductive layer 330 may extend at least beyond the lateral orientation of at least one of the first electrode 1920 and the second electrode 340, the lateral orientation of the emission region 210 may substantially not exceed the lateral range of either the first electrode 1920 or the second electrode 340. In some non-limiting examples, at least one of the following is true: some portions of the first electrode 1920 may be covered by at least one pixel definition layer (PDL) 309, and some portions of the second electrode 340 may not be disposed on at least one semiconductive layer 330, such that in at least one scenario, the emission region 210 may thereby be laterally constrained.

[0477] In some non-limiting examples, at least one of the various emission region layers can be deposited by deposition of the corresponding material constituting the emission region layer.

[0478] In some non-limiting examples, some of the semiconducting layers in at least one semiconducting layer 330 can be arranged in a desired pattern via vapor deposition of the corresponding emitter region layer material using a fine metal mask (FMM) having holes corresponding to the desired locations where emitter region layer material is to be deposited. In some non-limiting examples, multiple emitter region layers can be arranged in a similar pattern, including but not limited to, by depositing their respective emitter region layer materials in their respective deposition stages using an FMM.

[0479] In some non-limiting examples, as discussed herein, the emission region layer material corresponding to at least one of the first electrode 1920 and the second electrode 340 (including, but not limited to, the second electrode 340) may be deposited by pre-depositing a patterned coating 310 by patterning the material using an FMM vapor deposition process, the fine metal mask having holes corresponding to the desired locations where the patterned coating 310 is to be deposited, and then depositing the emission region layer material using either an open mask or a maskless deposition process.

[0480] In some non-limiting examples, the patterned coating 310 may be adapted to influence the tendency of the vapor flux 2432 of the deposited material 2431 (from which the emission region layer material may be composed) to be deposited on the surface of the exposed layer, including but not limited to the initial adhesion probability of the deposition of the deposited material 2431, which does not exceed the initial adhesion probability of the deposition of the deposited material 2431 on the surface of the exposed layer 11 of at least one semiconductive layer 330.

[0481] In some non-limiting examples, the first electrode 1920 may be disposed on the exposed layer surface 11 of the device 2200, and in some non-limiting examples, disposed within at least a portion of the lateral orientation of the emission region 210. In some non-limiting examples, at least within the lateral orientation of the emission region 210 of the (sub)pixels 215 / 216, the exposed layer surface 11 may include a TFT insulating layer 307 constituting various TFT structures 2206 for driving circuitry corresponding to the emission region 210 of a single display (sub)pixel 215 / 216 during the deposition of the first electrode 1920.

[0482] In some non-limiting examples, the TFT insulating layer 307 may be formed with openings extending therethrough to allow the first electrode 1920 to be electrically coupled to TFT electrodes, including but not limited to the TFT drain electrode.

[0483] Those skilled in the art will understand that the driving circuit may include multiple TFT structures 2206. Figure 22 For the purpose of simplification, only one TFT structure 2206 may be shown, but those skilled in the art will understand that such TFT structure 2206 may represent at least one of the following: a plurality of such TFT structures constituting a driving circuit and at least one of such components.

[0484] In some non-limiting examples, the end of the first electrode 1920 may be covered by at least one PDL 309, such that a portion of at least one PDL 309 may be inserted between the first electrode 1920 and at least one semiconductive layer 330, such that this end of the first electrode 1920 may be located outside the active region 1908 of the associated emission region 210.

[0485] In some non-limiting examples, portions of the second electrode 340 may not be directly disposed on at least one semiconductive layer 330, thereby allowing the emission region 210 to be laterally constrained.

[0486] In some non-limiting examples, at least one semiconductive layer 330 (including, but not limited to, at least one of layers 2231, 2233, 2235, 2237, 2239) may be deposited on the exposed layer surface 11 of the device 2200, including at least a portion of the lateral orientation of the emission region 210 of the (sub)pixels 215 / 216. In some non-limiting examples, at least within the lateral orientation of the emission region 210 of the (sub)pixels 215 / 216, the exposed layer surface 11 may include a first electrode 1920 when depositing the at least one semiconductive layer 330.

[0487] In some non-limiting examples, at least one semiconductive layer 330 may also extend beyond the lateral orientation of the emission region 210 of the (sub)pixels 215 / 216 and at least partially within the lateral orientation of the surrounding non-emission region 1911. In some non-limiting examples, such exposed layer surface 11 of the surrounding non-emission region 1911 may include a PDL 309 when at least one semiconductive layer 330 is deposited.

[0488] In some non-limiting examples, the second electrode 340 may be disposed above the exposed layer surface 11 of the device 2200, including at least a portion of the lateral orientation of the emission region 210 of the (sub)pixels 215 / 216. In some non-limiting examples, at least within the lateral orientation of the emission region 210 of the (sub)pixels 215 / 216, such exposed layer surface 11 may include at least one semiconductive layer 330 when the second electrode 1920 is deposited.

[0489] In some non-limiting examples, the second electrode 340 may also extend beyond the lateral orientation of the emission region 210 of the (sub)pixels 215 / 216 and at least partially within the lateral orientation of the surrounding non-emission region 1911. In some non-limiting examples, the exposed layer surface 11 of such surrounding non-emission region 1911 may include PDL 309 during the deposition of the second electrode 340.

[0490] In some non-limiting examples, the second electrode 340 may extend over most of the lateral orientation of the surrounding non-emission region 1911, including but not limited to substantially all of it.

[0491] In some non-limiting examples, the respective emitting regions 210 of device 2200 may be laterally patterned. In some non-limiting examples, the pattern may extend along a first lateral direction. In some non-limiting examples, the pattern may also extend along a second lateral direction, which in some non-limiting examples may extend at an angle relative to the first lateral direction. In some non-limiting examples, the second lateral direction may be substantially perpendicular to the first lateral direction. In some non-limiting examples, the pattern may have a plurality of elements arranged in such a pattern, each element being characterized by at least one of the following, including but not limited to: the wavelength of light emitted by its emitting region 210, the shape of such emitting regions 210, their dimensions (along at least one of the first lateral direction and the second lateral direction), their orientation (relative to at least one of the first lateral direction and the second lateral direction), and their spacing from previous elements in the pattern (relative to at least one of the first lateral direction and the second lateral direction). In some non-limiting examples, the pattern may be repeated in at least one of the first lateral direction and the second lateral direction.

[0492] In some non-limiting examples, each individual emission region 210 of device 2200 may be associated with and driven by a corresponding driving circuit within the backplane 302 of device 2200, the corresponding driving circuit being used to drive the OLED structure for the associated emission region 210. In some non-limiting examples, including but not limited to, in the case of a regular patterned layout in which the emission regions 210 may extend in both a first (row) lateral direction and a second (column) lateral direction, signal lines corresponding to each row of emission regions 210 extending in the first lateral direction and signal lines corresponding to each column of emission regions 210 extending in the second lateral direction may exist in the backplane 302. In this non-limiting configuration, the signal on the row select line can activate the corresponding gate of the electrically coupled switching TFT structure 2206, and the signal on the data line can activate the corresponding source of the electrically coupled switching TFT structure 2206, such that the signal on the row select line / data line pair can be electrically coupled to and activate the anode of the OLED structure of the emission region 210 associated with such pair through the positive terminal of the power supply 2204, thereby causing photons to be emitted from it, and its cathode is electrically coupled to the negative terminal of the power supply 2204.

[0493] In some non-limiting examples, a single display pixel 215 may include three sub-pixels 216, which in some non-limiting examples may correspond to a single sub-pixel 216 of each of three colors, including but not limited to at least one of the following: R (red) sub-pixel 216 R G (green) subpixel 216 G And B (blue) subpixel 216 BIn some non-limiting examples, a single display pixel 215 may include four sub-pixels 216, each sub-pixel corresponding to a single sub-pixel 216 of each of the two colors (including, but not limited to, R (red) sub-pixel 216). R And B (blue) subpixel 216 B And the two sub-pixels 216 of the third color (including but not limited to G (green) sub-pixel 216) G In some non-limiting examples, a single display pixel 215 may include four sub-pixels 216, which in some non-limiting examples may correspond to a single sub-pixel 216 of each of the three colors, including but not limited to at least one of the following: R (red) sub-pixel 216 R G (green) subpixel 216 G And B (blue) subpixel 216 B And the fourth W (white) sub-pixel 216 w .

[0494] In some non-limiting examples, the emission spectrum of light emitted by a given (sub)pixel 215 / 216 may correspond to a color that can represent (sub)pixel 215 / 216. In some non-limiting examples, the wavelength of light may not correspond to such a color, but further processing may be performed in a manner obvious to those skilled in the art to convert the wavelength to such a corresponding wavelength.

[0495] In some non-limiting examples, the emission spectrum of light emitted by a given (sub)pixel 215 / 216 (corresponding to the color that can represent (sub)pixel 215 / 216) may be associated with at least one of the following: the structure and composition of at least one semiconductive layer 330 (including but not limited to at least one EML 2235) extending between its first electrode 1920 and second electrode 340. In some non-limiting examples, at least one EML 2235 of at least one semiconductive layer 330 may be adjusted to facilitate the emission of light having an emission spectrum corresponding to the color that can represent (sub)pixel 215 / 216. In some non-limiting examples, R (red) subpixel 216 R The EML 2235 may include an R (red) EML material, including but not limited to a host material doped with an R (red) emitter material. In some non-limiting examples, the G (green) subpixel 216 G EML 2235 may include G (green) EML material, including but not limited to a host material doped with G (green) emitter material. In some non-limiting examples, B (blue) subpixel 216 B EML 2235 may include B (blue) EML material, including but not limited to host material doped with B (blue) emitter material.

[0496] In some non-limiting examples, at least one of the semiconductive layers 330 (including but not limited to HIL 2231, HTL 2233, EML 2235, ETL 2237 and EIL 2239) may be selected to have at least one characteristic in the longitudinal orientation (including but not limited to its presence, absence, thickness, composition and order) to facilitate the emission of light from therefrom, which has a wavelength spectrum corresponding to a color that can represent a given sub-pixel 216, including but not limited to at least one of R (red), G (green) and B (blue).

[0497] In some non-limiting examples, according to the additive color model, the emission of light having wavelength spectra corresponding to a variety of colors selected from R (red), G (green) and B (blue) can promote the emission of light having wavelength spectra corresponding to different colors, including but not limited to W (white) (red + green + blue), Y (yellow) (red + green), C (cyan) (green + blue) and M (magenta) (blue + red).

[0498] In some non-limiting examples, the exposed layer surface 11 of device 2100 may be exposed to the vapor flux 2432 of deposited material 2431, including but not limited to one of open mask and maskless deposition processes.

[0499] In some non-limiting examples, at least one semiconductive layer 330 may be deposited over the exposed layer surface 11 of the device 2200 in at least a portion of the emission region 210, and in some non-limiting examples, the exposed layer surface includes a first electrode 1920.

[0500] In some non-limiting examples, the exposed surface 11 of device 2200 (which may include at least one semiconductive layer 330 in some non-limiting examples) may be exposed to the vapor flux 2312 of patterned material 2311, including but not limited to the use of a shadow mask 2315 to form a patterned coating 310 in the first portion 1901. Regardless of whether a shadow mask 2315 is used, the patterned coating 310 may be substantially confined in its lateral orientation to the transmissive region 112.

[0501] In some non-limiting examples, the lateral orientation of at least one emission region 210 may extend across and include associated at least one TFT structure 2206 for driving the emission region 210 along data and scan lines (not shown), which, in some non-limiting examples, may be formed of at least one of Cu and TCO.

[0502] In some non-limiting examples, (sub)pixels 215 / 216 may be arranged side-by-side. In some non-limiting examples, the (color) order of the sub-pixels 216 of the first pixel 215 may be the same as the (color) order of the sub-pixels 216 of the second pixel 215. In some non-limiting examples, the (color) order of the sub-pixels 216 of the first pixel 215 may be different from the (color) order of the sub-pixels 216 of the second pixel 215.

[0503] In some non-limiting examples, the sub-pixels 216 of adjacent pixels 215 may be aligned in at least one of row arrangement, column arrangement and array arrangement.

[0504] In some non-limiting examples, the first at least one sub-pixel in the row and column of the aligned sub-pixel 216 of adjacent pixel 215 may include a sub-pixel 216 of the same and different colors.

[0505] In some non-limiting examples, a first at least one sub-pixel in the row and column of the aligned sub-pixel 216 of the adjacent pixel 215 may be aligned with at least one of a second at least one and a third at least one sub-pixel in the row and column of the aligned sub-pixel 216 of the adjacent pixel 215.

[0506] In some non-limiting examples, the first at least one sub-pixel in the row and column of the aligned sub-pixel 216 of the adjacent pixel 215 may be one of the following: offset or misaligned with at least one of the second at least one and the third at least one sub-pixel in the row and column of the aligned sub-pixel 216 of the adjacent pixel 215.

[0507] In some non-limiting examples, the sub-pixels 216 of the adjacent pixels 215 of at least one of the first, at least one of the second, and at least one of the third sub-pixels in the row and column may be arranged such that the corresponding sub-pixels 216 of each of the first, at least one of the second, and at least one of the third sub-pixels in the row and column may have the same color.

[0508] In some non-limiting examples, the sub-pixels 216 of the adjacent pixels 215 of the first at least one sub-pixel, the second at least one sub-pixel, and the third at least one sub-pixel of at least one of the rows and columns can be arranged such that the corresponding sub-pixels 216 of each of the first at least one sub-pixel, the second at least one sub-pixel, and the third at least one sub-pixel of at least one of the rows and columns can have different colors.

[0509] In some non-limiting examples, in at least one signal transmission region 112 of at least one signal exchange portion 103 of the display panel 100, at least one signal transmission region 112 may be disposed between a plurality of emission regions 210. In some non-limiting examples, at least one transmission region 112 may be disposed between adjacent (sub)pixels 215 / 216. In some non-limiting examples, adjacent sub-pixels 216 surrounding at least one signal transmission region 112 may form part of the same pixel 215. In some non-limiting examples, adjacent sub-pixels 216 surrounding at least one transmission region 112 may be associated with different pixels 215.

[0510] In some non-limiting examples, the region of the closed coating 2140 (“cathode-free region”) which may substantially lack the second electrode material, including but not limited to at least one transmission region 112, may exhibit photoelectronic properties different from other regions (including but not limited to at least one emission region 210). In some non-limiting examples, however, such a cathode-free region may include some second electrode material, including but not limited to the form of at least one particulate structure 2150 and a discontinuous layer 2160 of at least one instance of such particulate structure 2150.

[0511] In some non-limiting examples, this can be achieved by laser ablation of the second electrode material. However, in some non-limiting examples, laser ablation can produce a cloud of debris that can affect the vapor deposition process.

[0512] In some non-limiting examples, this can be achieved by using an FMM to set a patterned coating 310 (which in some non-limiting examples may be a nucleation inhibition coating (NIC)) in a certain pattern on the exposed surface 11 of at least one semiconductive layer 330, and then depositing a deposition material 2431 for forming a second electrode 340 on the exposed surface.

[0513] In some non-limiting examples, the patterned coating 310 may be adapted to influence the tendency of the vapor flux 2432 of the deposited material 2431 to be deposited on the surface of the exposed layer, including but not limited to the initial adhesion probability of the deposited material 2431, which does not exceed the initial adhesion probability of the deposited material 2431 on the surface 11 of the exposed layer of at least one semiconductive layer 330.

[0514] In some non-limiting examples, the patterned coating 310 may be deposited in a pattern corresponding to the lateral orientation (including but not limited to) of the first portion 1901 of at least some of the transmission regions in the transmission region 112.

[0515] In some non-limiting examples, the patterned coating 310 may be deposited in multiple stages, each stage using different FMMs that define different patterns within the first part 1901, the multiple stages corresponding to different subsets of the transmission region 112 respectively.

[0516] In some non-limiting examples, after depositing the patterned coating 310 (all stages), the display panel 100 may be subjected to a vapor flux 2432 of the deposited material 2431 in one of an aperture mask and a maskless deposition process to form a second electrode 340 for each of the emission regions 210 corresponding to the (sub)pixels 215 / 216 in at least the second portion 1902 of the lateral orientation but not in the first portion 1901 of the lateral orientation.

[0517] In some non-limiting examples, although not shown, the overlay 2170 may be disposed on at least one of the second electrode 340 and the patterned coating 310. In some non-limiting examples, although not shown, the overlay 2170 may be deposited at least partially across the lateral extent of the optoelectronic device 2200, in some non-limiting examples covering the second electrode 340 in the second portion 1902, and in some non-limiting examples at least partially covering at least one particulate structure 2150 and forming an interface with the patterned coating 310 at its exposed layer surface 11 in the first portion 1901.

[0518] Non-launch area In some non-limiting examples, various emitting regions 210 of the device 2200 may be substantially surrounded and separated by at least one non-emitting region 1911 in at least one lateral direction, wherein at least one of the structures and configurations of the device 2200 shown along the longitudinal orientation may vary to substantially suppress light emission therefrom.

[0519] In some non-limiting examples, the non-emission region 1911 may include those regions that are substantially without emission region 210 in the lateral orientation.

[0520] In some non-limiting examples, the longitudinal topology of various layers of at least one semiconductive layer 330 may be varied to define at least one emission region 210 surrounded by at least one non-emission region 1911 (at least in one lateral direction).

[0521] In some non-limiting examples, the emission region 210 corresponding to a single display (sub)pixel 215 / 216 can be understood as having a lateral orientation and being surrounded by at least one non-emission region 1911 in at least one lateral direction.

[0522] Now, a non-limiting example of a specific implementation of the longitudinal orientation of a device 2200 applied to an emission region 210 corresponding to a single display (sub)pixel 215 / 216 of display 3600 will be described. Although features of this specific implementation are shown as specific to emission region 210, those skilled in the art will understand that in some non-limiting examples, more than one emission region 210 may cover common features.

[0523] In some non-limiting examples, the lateral orientation of the surrounding non-emission region 1911 can be characterized by the presence of the corresponding PDL 309.

[0524] In some non-limiting examples, the thickness of the PDL 309 may increase from a minimum at the end covering the first electrode 1920 to a maximum beyond the lateral extent of the first electrode 1920. In some non-limiting examples, the thickness variation of at least one PDL 309 may define a valley shape centered on the emission region 210. In some non-limiting examples, the valley shape may constrain the field of view (FOV) of the light emitted by the emission region 210.

[0525] While the PDL 309 is generally illustrated herein as having a linearly sloping surface to form a valley-shaped configuration defining the emission region 210 surrounded therearound, those skilled in the art will understand that in some non-limiting examples, at least one of the shape, aspect ratio, thickness, width, and configuration of such a PDL 309 may vary. In some non-limiting examples, the PDL 309 may be formed having either a substantially steep portion or a more gently sloping portion. In some non-limiting examples, such a PDL 309 may be configured to extend substantially vertically away from the surface on which it is deposited, which may cover at least one edge of the first electrode 1920. In some non-limiting examples, such a PDL 309 may be configured to deposit at least one semiconductive layer 330 thereon by solution processing techniques (including, but not limited to, printing, including, but not limited to, inkjet printing).

[0526] In some non-limiting examples, PDL 309 may be deposited substantially over TFT insulating layer 307, although, as shown, in some non-limiting examples, PDL 309 may also extend over at least a portion (including but not limited to its outer edge) of the deposited first electrode 1920.

[0527] In some non-limiting examples, the lateral extent of at least one of the non-emission regions 1911 may be at least the lateral extent of the emission region 210 interposed between them, and in some non-limiting examples exceed that lateral extent, including but not limited to multiples thereof.

[0528] In some non-limiting examples, the thickness of at least one PDL 309 in at least one transmissive region 112, (in some non-limiting examples) the thickness of at least one non-emissive region 1911 (which are placed between adjacent emissive regions 210, at least in regions laterally spaced therefrom in some non-limiting examples) and (in some non-limiting examples; although not shown) the thickness of the TFT insulating layer 307 may be reduced in order to increase at least one of the transmittance and transmittance angle relative to and through the layer of the display panel 100 to facilitate the transmission of light through it.

[0529] Patterning In some non-restrictive examples, see reference. Figure 21 In some non-limiting examples, the patterned coating 310 containing patterned material 2311 (which may be NIC material in some non-limiting examples) may be disposed as a sealing coating 2140 on the exposed layer surface 11 of the lower layer 2610 (including but not limited to substrate 10) of device 2100. In some non-limiting examples, the lateral extent is limited by selective deposition (including but not limited to the use of a shadow mask 2315, such as but not limited to a fine metal mask (EMM), including but not limited to the first portion 1901).

[0530] Therefore, in some non-limiting examples, in the second part 1902 of device 2100, the exposed surface 11 of the lower layer 2610 of device 2100 may be substantially without the closed coating 2140 of patterned coating 310.

[0531] In some non-limiting examples, by exposing the exposed surface 11 of device 2200 (which in some non-limiting examples may include at least one semiconductive layer 330) to the vapor flux 2312 of patterned material 2311, a deposited layer 331 may be deposited in a second portion 1902, including but not limited to using a shadow mask 2315 to form a patterned coating 310 in a first portion 1901. In some non-limiting examples, such as Figure 23 As shown, regardless of whether a shadow mask 2315 is used, the patterned material 2311 may be substantially limited in its lateral orientation to the emitting region 210 to the non-emitting region 1911, including but not limited to at least one transmissive region 112 located therein.

[0532] In some non-restrictive examples, see reference. Figure 21In some non-limiting examples, the patterned coating 310 containing patterned material 2311 (which may be NIC material in some non-limiting examples) may be disposed as a sealing coating 2140 on the exposed layer surface 11 of the lower layer 2610 (including but not limited to substrate 10) of device 2100. In some non-limiting examples, the lateral extent is limited by selective deposition (including but not limited to the use of a shadow mask 2315, such as but not limited to FMM, including but not limited to the first portion 1901).

[0533] Therefore, in some non-limiting examples, in the second part 1902 of device 2100, the exposed surface 11 of the lower layer 2610 of device 2100 may be substantially without the closed coating 2140 of patterned coating 310.

[0534] Patterned coating The patterned coating 310 may include a patterned material 2311. In some non-limiting examples, the patterned material 2311 may include a NIC material. In some non-limiting examples, the patterned coating 310 may include a sealing coating 2140 of the patterned material 2311.

[0535] The patterned coating 310 provides an exposed layer surface 11 having a substantially low tendency (including, but not limited to, a substantially low initial adhesion probability (in some non-limiting examples, under the conditions identified in the dual QCM technique described by Walker et al.) for deposition of the deposited material 2431 to be deposited on the exposed layer surface 11 of the lower layer 2610 of the device 2100, where the patterned coating 310 has been deposited) to be deposited. In some non-limiting examples, this substantially low tendency may be significantly less than the tendency for deposition of the deposited material 2431 to be deposited on the exposed layer surface 11 of the lower layer 2610 of the device 2100 (on which the patterned coating 310 has been deposited).

[0536] Due to the properties of at least one of the patterned coating 310 and the patterned material 2311 for the deposition of the deposited material 2431 (including, but not limited to, a low initial adhesion probability) (in some non-limiting examples, when deposited as at least one of some form of film and coating and under conditions similar to the deposition of the patterned coating 310 within the device 2100), the exposed surface 11 of the first portion 1901 of the patterned coating 310 may be substantially free of the sealing coating 2140 of the deposited material 2431.

[0537] In some non-limiting examples, exposing device 2100 to a vapor flux 2432 of deposited material 2431 may result in the formation of a sealing coating 2140 of deposited material 2431 in the second part 1902, wherein the exposed surface 11 of the lower layer 2610 may be substantially free of the sealing coating 2140 of patterned coating 310.

[0538] In some non-limiting examples, the patterned coating 310 may be a NIC that provides high deposition (patterning) contrast relative to subsequent deposition of the deposited material 2431, such that the deposited material 2431 does not tend to deposit as a closed coating 2140 in some non-limiting examples, where the patterned coating 310 has already been deposited.

[0539] In some non-limiting examples, there may be scenarios where a patterned coating 310 is required to induce the formation of at least one discontinuous layer 2160 of particulate structure 2150 when the patterned coating 310 in the first portion 1901 is subjected to a vapor flux 2432 of the deposited material 2431. In at least some applications, the properties of the patterned coating 310 may allow a closed coating 2140 of the deposited material 2431 to be formed in a second portion 1902, which may be substantially free of the patterned coating 310, while a discontinuous layer 2160 of at least one particulate structure 2150 having only at least one characteristic may be formed on the patterned coating 310 in the first portion 1901.

[0540] For the purpose of simplifying the discussion, in this disclosure, the patterned coating 310 may be designated as a particulate structure patterned coating 310, with regard to the deposition of the patterned coating 310 to serve as a substrate for depositing at least one particulate structure 2150 thereon. p In contrast, with regard to the patterned coating 310 being deposited in the first portion 1901 to substantially prevent the formation of the sealing coating 2140 of the deposited layer 331 in such the first portion 1901, thereby confining the deposition of the sealing coating 2140 of the deposited layer 331 to the second portion 1902, this patterned coating 310 can be designated as a non-particulate patterned coating 310. n Those skilled in the art will understand that, in some non-limiting examples, the patterned coating 310 can serve as a granular structure patterned coating 310. p Non-particulate patterned coating 310 n Both.

[0541] In some non-limiting examples, the following scenario may exist: a discontinuous layer 2160 of at least one particulate structure 2150 of the deposited material 2431 needs to be formed in the second part 1902 (in some non-limiting examples, the deposited material may be one of metals and metal alloys (metal / alloys), including but not limited to at least one of Yb, Ag, Mg and Ag-containing materials (including but not limited to MgAg), while depositing a closed coating 2140 of the deposited material 2431 having a thickness not limited to one of about 100 nm, 50 nm, 25 nm and 15 nm. In some non-limiting examples, the amount of deposited material 2431 deposited in the first portion 1901 as a discontinuous layer 2160 of at least one particulate structure 2150 may correspond to one of about 1%-50%, 2-25%, 5-20%, and 7-10% of the amount of deposited material 2431 deposited in the second portion 1902 as a sealing coating 2140. In some non-limiting examples, the sealing coating may correspond to a thickness of at least one of about 100 nm, 75 nm, 50 nm, 25 nm, and 15 nm.

[0542] In some non-limiting examples, the patterned coating 310 may be patterned, the pattern being defined by at least one area of ​​a closed coating 2140 in which there may be substantially no patterned coating 310.

[0543] In some non-limiting examples, the at least one region may separate the patterned coating 310 into a plurality of discrete segments. In some non-limiting examples, the plurality of discrete segments of the patterned coating 310 may be physically spaced apart from each other in their lateral orientation. In some non-limiting examples, the plurality of discrete segments of the patterned coating 310 may be arranged in a regular structure (including but not limited to an array (matrix)) such that, in some non-limiting examples, the discrete segments of the patterned coating 310 may repeat a pattern construction.

[0544] In some non-limiting examples, at least one of the plurality of discrete segments of the patterned coating 310 may each correspond to an emission region 210. In some non-limiting examples, the aperture ratio of the emission region 210 may be no more than one of about 50%, 40%, 30%, and 20%.

[0545] In some non-limiting examples, the patterned coating 310 may be formed as a single monolithic coating.

[0546] Properties of patterned coatings / materials composition In some non-limiting examples, at least one of the patterned coating 310 and the patterned material 2311 may include at least one of fluorine (F) atoms and silicon (Si) atoms. In some non-limiting examples, the patterned material 2311 used to form the patterned coating 310 may be a compound containing at least one of F and Si.

[0547] In some non-limiting examples, the patterning material 2311 may include a compound containing F. In some non-limiting examples, the patterning material 2311 may include a compound containing both F and carbon atoms. In some non-limiting examples, the patterning material 2311 may include a compound containing both F and C, wherein the atomic ratio of F to C corresponds to an F / C quotient of at least one of about 0.5, 0.7, 1, 1.5, 2, and 2.5.

[0548] In some non-limiting examples, the atomic ratio of F to C can be determined by counting the F atoms present in the compound structure, and for C atoms, only counting the sp atoms present in the compound structure. 3 The hybrid C atoms are counted. In some non-limiting examples, the patterned material 2311 may include a compound comprising F and C portions as part of its molecular substructure, wherein the ratio of F to C atoms corresponds to an F / C quotient of at least one of about 1, 1.5, and 2.

[0549] In some non-limiting examples, the patterned material 2311 may include an organic-inorganic hybrid material.

[0550] In some non-limiting examples, the patterned material 2311 may include oligomers.

[0551] In some non-limiting examples, the patterned material 2311 may include a compound having a molecular structure comprising a backbone and at least one functional group bonded to the backbone. In some non-limiting examples, the backbone may be an inorganic portion, and the at least one functional group may be an organic portion.

[0552] In some non-limiting examples, the compound may have a molecular structure including a siloxane group. In some non-limiting examples, the siloxane group may be one of a straight-chain siloxane group, a branched siloxane group, and a cyclic siloxane group. In some non-limiting examples, the main chain may include a siloxane group. In some non-limiting examples, the main chain may include a siloxane group and at least one functional group containing F. In some non-limiting examples, the at least one functional group containing F may be a fluoroalkyl group. In some non-limiting examples, such compounds may include fluorosiloxanes, including but not limited to Example Material 6 and Example Material 9 (discussed below).

[0553] In some non-limiting examples, the compound may have a molecular structure including a silsesquioxane group. In some non-limiting examples, the silsesquioxane group may be a POSS. In some non-limiting examples, the main chain may include a silsesquioxane group. In some non-limiting examples, the main chain may include a silsesquioxane group and at least one functional group containing F. In some non-limiting examples, the at least one functional group containing F may be a fluoroalkyl group. In some non-limiting examples, such compounds may include fluoro-silsesquioxanes and fluoro-POSS, including but not limited to Example Material 8 (discussed below).

[0554] In some non-limiting examples, the compound may have a molecular structure comprising at least one of a substituted aryl group, an unsubstituted aryl group, a substituted heteroaryl group, and an unsubstituted heteroaryl group. In some non-limiting examples, the aryl group may be at least one of phenyl and naphthyl. In some non-limiting examples, at least one C atom of the aryl group may be substituted with a heteroatom (in some non-limiting examples, at least one of O, N, and S) to derive a heteroaryl group. In some non-limiting examples, the main chain may comprise at least one of a substituted aryl group, an unsubstituted aryl group, a substituted heteroaryl group, and an unsubstituted heteroaryl group. In some non-limiting examples, the main chain may comprise at least one of a substituted aryl group, an unsubstituted aryl group, a substituted heteroaryl group, and an unsubstituted heteroaryl group, and at least one functional group containing F. In some non-limiting examples, at least one functional group containing F may be a fluoroalkyl group.

[0555] In some non-limiting examples, the compound may have a molecular structure comprising at least one of a substituted hydrocarbon group, an unsubstituted hydrocarbon group, a straight-chain hydrocarbon group, a branched hydrocarbon group, and a cyclic hydrocarbon group. In some non-limiting examples, at least one C atom of the hydrocarbon group may be substituted with a heteroatom, which includes, but is not limited to, at least one of O, N, and S.

[0556] In some non-limiting examples, the compound may have a molecular structure including a phosphazene group. In some non-limiting examples, the phosphazene group may be at least one of a straight-chain phosphazene group, a branched phosphazene group, and a cyclic phosphazene group. In some non-limiting examples, the main chain may include a phosphazene group. In some non-limiting examples, the main chain may include a phosphazene group and at least one functional group containing F. In some non-limiting examples, the at least one functional group containing F may be a fluoroalkyl group. Non-limiting examples of such compounds include fluorophosphazenes. A non-limiting example of such a compound is Example Material 4 (discussed below).

[0557] In some non-limiting examples, the compound may be a fluoropolymer. In some non-limiting examples, the compound may be a block copolymer containing F. In some non-limiting examples, the compound may be an oligomer. In some non-limiting examples, the oligomer may be a fluorinated oligomer. In some non-limiting examples, the compound may be a block oligomer containing F. Non-limiting examples of at least one of the fluoropolymers and fluorinated oligomers are those having the molecular structure of at least one of Example Material 3, Example Material 5, and Example Material 7 (discussed herein).

[0558] In some non-limiting examples, the compound may be a metal complex. In some non-limiting examples, the metal complex may be an organometallic complex. In some non-limiting examples, the organometallic complex may contain F. In some non-limiting examples, the organometallic complex may include at least one ligand containing F. In some non-limiting examples, the at least one ligand containing F may include a fluoroalkyl group.

[0559] In some non-limiting examples, the patterned material 2311 may include a variety of different materials.

[0560] Initial adhesion probability In some non-limiting examples, the initial adhesion probability of the patterned material 2311 can be determined by depositing such material as at least one of a film or coating, and in an environment similar to the deposition of the patterned coating 310 within the device 2100, having a sufficient thickness to mitigate / reduce any effect on the degree of intermolecular interaction with the underlying layer 2610 when deposited on the surface. In some non-limiting examples, the initial adhesion probability can be measured on films / coatings with thicknesses of at least about 20 nm, 25 nm, 30 nm, 50 nm, 60 nm, and 100 nm.

[0561] In some non-limiting examples, at least one of the patterned coating 310 and the patterned material 2311 (in some non-limiting examples, when deposited as at least one of some form of film and coating and under conditions similar to the deposition of the patterned coating 310 within the device 2100) may have an initial adhesion probability to the deposition of the deposited material 2431 of no more than one of about 0.3, 0.2, 0.15, 0.1, 0.08, 0.05, 0.03, 0.02, 0.01, 0.008, 0.005, 0.003, 0.001, 0.0008, 0.0005, 0.0003, and 0.0001.

[0562] In some non-limiting examples, at least one of the patterned coating 310 and the patterned material 2311 (in some non-limiting examples, when deposited as at least one of some form of film and coating and under conditions similar to the deposition of the patterned coating 310 within the device 2100) may have an initial adhesion probability for the deposition of at least one of Ag and Mg, not exceeding one of about 0.3, 0.2, 0.15, 0.1, 0.08, 0.05, 0.03, 0.02, 0.01, 0.008, 0.005, 0.003, 0.001, 0.0008, 0.0005, 0.0003, and 0.0001.

[0563] In some non-limiting examples, at least one of the patterned coating 310 and the patterned material 2311 (in some non-limiting examples, when deposited as at least one of some form of film and coating and under conditions similar to the deposition of the patterned coating 310 within the device 2100) may have a value of about 0.15-0.0001, 0.1-0.0003, 0.08-0.0005, or 0.08-0.00 08, 0.05-0.001, 0.03-0.0001, 0.03-0.0003, 0.03-0.0005, 0.03-0.0008, 0.03-0.001, 0.03-0.005, 0.03-0.008, 0.03-0.01, 0.02-0.0001, 0.02-0.0003, 0.02-0.0005, 0.02-0. 0008, 0.02-0.001, 0.02-0.005, 0.02-0.008, 0.02-0.01, 0.01-0.0001, 0.01-0.0003, 0.01-0.0005, 0.01-0.0008, 0.01-0.001, 0.01-0.005, 0.01-0.008, 0.008-0.0001, 0.008- The initial adhesion probability of the deposition of sedimentary material 2431 is one of the following values: 0.0003, 0.008-0.0005, 0.008-0.0008, 0.008-0.001, 0.008-0.005, 0.005-0.0001, 0.005-0.0003, 0.005-0.0005, 0.005-0.0008, and 0.005-0.001.

[0564] In some non-limiting examples, at least one of the patterned coating 310 and the patterned material 2311 (in some non-limiting examples, when deposited as at least one of some form of film and coating and under conditions similar to the deposition of the patterned coating 310 within the device 2100) may have an initial adhesion probability for the deposition of the various deposited materials 2431 not exceeding a threshold. In some non-limiting examples, such a threshold may be one of about 0.3, 0.2, 0.18, 0.15, 0.13, 0.1, 0.08, 0.05, 0.03, 0.02, 0.01, 0.008, 0.005, 0.003, and 0.001.

[0565] In some non-limiting examples, at least one of the patterned coating 310 and the patterned material 2311 (in some non-limiting examples, when deposited as at least one of some form of film and coating and under conditions similar to the deposition of the patterned coating 310 within the device 2100) may have an initial adhesion probability of no more than such a threshold for the deposition of a plurality of deposition materials 2431 selected from at least one of Ag, Mg, Yb, Cd, and Zn. In some non-limiting examples, the patterned coating 310 may exhibit an initial adhesion probability of no more than such a threshold for the deposition of a plurality of deposition materials 2431 selected from at least one of Ag, Mg, and Yb.

[0566] In some non-limiting examples, at least one of the patterned coating 310 and the patterned material 2311 (in some non-limiting examples, when deposited as at least one of some form of film and coating and under conditions similar to the deposition of the patterned coating 310 within the device 2100) may exhibit an initial adhesion probability for the deposition of the first deposited material 2431 equal to, but not limited to, a first threshold, and an initial adhesion probability for the deposition of the second deposited material 2431 equal to, but not limited to, a second threshold, lower than a second threshold. In some non-limiting examples, the first deposited material 2431 may be Ag, and the second deposited material 2431 may be Mg. In some non-limiting examples, the first deposited material 2431 may be Ag, and the second deposited material may be Yb. In some non-limiting examples, the first deposited material 2431 may be Yb, and the second deposited material 2431 may be Mg. In some non-limiting examples, the first threshold may exceed the second threshold.

[0567] In some non-limiting examples, there may be a scenario where a patterned coating 310 is required to induce the formation of at least one discontinuous layer 2160 of a particulate structure 2150 when the patterned coating 310 is subjected to a vapor flux 2432 of the deposited material 2431. In some non-limiting examples, the patterned coating 310 may exhibit a substantially low initial adhesion probability, such that a closed coating 2140 of the deposited material 2431 may be formed in a second portion 1902, which may be substantially free of the patterned coating 310, while a discontinuous layer 2160 of at least one particulate structure 2150 having at least one characteristic may be formed on the patterned coating 310 in the first portion 1901. In some non-limiting examples, there may be a scenario where a discontinuous layer 2160 of at least one particulate structure 2150 of deposited material 2431 needs to be formed in the second portion 1902 (in some non-limiting examples, the deposited material may be one of a metal and a metal alloy), while simultaneously depositing a sealing coating 2140 of deposited material 2431 having a thickness, for example, not exceeding one of about 100 nm, 50 nm, 25 nm, and 15 nm. In some non-limiting examples, the amount of deposited material 2431 deposited as the discontinuous layer 2160 of at least one particulate structure 2150 in the first portion 1901 may correspond to one of about 1%-50%, 2-25%, 5-20%, and 7-10% of the amount of deposited material 2431 deposited as the sealing coating 2140 in the second portion 1902, and in some non-limiting examples, the sealing coating may correspond to a thickness not exceeding one of at least one of about 100 nm, 75 nm, 50 nm, 25 nm, and 15 nm.

[0568] In some non-limiting examples, there may be a positive correlation between the initial adhesion probability of the deposition of the deposited material 2431 to at least one of the patterned coating 310 and the patterned material 2311 (in some non-limiting examples, when deposited as at least one of some form of film and coating and under conditions similar to the deposition of the patterned coating 310 within the device 2100) and the average layer thickness of the deposited material 2431 thereon.

[0569] transmittance In some non-limiting examples, at least one of the patterned coating 310 and the patterned material 2311 (in some non-limiting examples, when deposited as at least one of some form of film and coating and under conditions similar to the deposition of the patterned coating 310 within the device 2100) may have a transmittance of at least a threshold transmittance value for light after being subjected to a vapor flux 2432 of the deposited material 2431, including but not limited to Ag.

[0570] In some non-limiting examples, this transmittance can be measured under typical conditions suitable for depositing electrodes of optoelectronic device 2200 (in some non-limiting examples, which may be the cathode of organic light-emitting diode (OLED) device 2200) after at least one of the patterned coating 310 and patterned material 2311 formed as a thin film is exposed to a vapor flux 2432 of deposited material 2431 (including, but not limited to, at least one of metals and alloys, including, but not limited to, at least one of Yb, Ag, Mg and Ag-containing materials (including, but not limited to, MgAg)).

[0571] In some non-limiting examples, conditions for subjecting the exposed layer surface 11 to a vapor flux 2432 of the deposited material 2431 (including, but not limited to, at least one of metals and alloys, including, but not limited to, at least one of Yb, Ag, Mg, and Ag-containing materials (including, but not limited to, MgAg)) may include: maintaining a vacuum pressure at a reference pressure, including, but not limited to, about 10 -4 To and 10 -5 One of the deposited materials 2431; the vapor flux 2432 of the deposited material 2431 (including but not limited to at least one of metals and alloys, including but not limited to at least one of Yb, Ag, Mg and Ag-containing materials (including but not limited to MgAg)) is substantially consistent with a reference deposition rate, including but not limited to about 1 Å / s, which may be monitored using a QCM in some non-limiting examples; the vapor flux 2432 of the deposited material 2431 is directed to the exposed layer surface 11 at an angle substantially close to the plane perpendicular to the exposed layer surface 11; the exposed layer surface 11 is subjected to the deposited material The vapor flux 2432 of material 2431 (including but not limited to at least one of metals and alloys, including but not limited to at least one of Yb, Ag, Mg and Ag-containing materials (including but not limited to MgAg)) is applied until a reference average layer thickness of about 15 nm is reached; and when such a reference average layer thickness is reached, the exposed layer surface 11 is not further subjected to the vapor flux of the deposited material 2431 (including but not limited to at least one of metals and alloys, including but not limited to at least one of Yb, Ag, Mg and Ag-containing materials (including but not limited to MgAg)).

[0572] In some non-limiting examples, the exposed layer surface 11 subjected to a vapor flux 2432 of the deposited material 2431 (including but not limited to at least one of Yb, Ag, Mg, and Ag-containing materials (including but not limited to MgAg)) may be substantially at room temperature (e.g., about 25°C). In some non-limiting examples, the exposed layer surface 11 subjected to a vapor flux 2432 of the deposited material 2431 (including but not limited to at least one of metals and alloys, including but not limited to Yb, Ag, Mg, and Ag-containing materials (including but not limited to MgAg)) may be positioned about 65 cm away from the evaporation source, through which the deposited material 2431 (including but not limited to at least one of metals and alloys, including but not limited to Yb, Ag, Mg, and Ag-containing materials (including but not limited to MgAg)) evaporates.

[0573] In some non-limiting examples, the threshold transmittance value can be measured at a wavelength in the visible spectrum, which may be at least about 460 nm, 500 nm, 550 nm, and 600 nm. In some non-limiting examples, the threshold transmittance value can be measured at a wavelength in at least one of the IR and NIR spectra. In some non-limiting examples, the threshold transmittance value can be measured at a wavelength, which may be about 700 nm, 900 nm, and 1000 nm. In some non-limiting examples, the threshold transmittance value may be expressed as a percentage of the incident EM power that can be transmitted through the sample. In some non-limiting examples, the threshold transmittance value may be at least about 60%, 65%, 70%, 75%, 80%, 85%, and 90%.

[0574] Those skilled in the art will understand that high transmittance generally indicates the absence of a sealing coating 2140 containing deposited material 2431 (including, but not limited to, at least one of Yb, Ag, Mg, and Ag-containing materials (including, but not limited to, MgAg)). On the other hand, low transmittance generally indicates the presence of a sealing coating 2140 containing deposited material 2431 (including, but not limited to, Yb, Ag, Mg, and Ag-containing materials (including, but not limited to, MgAg)) because the metal film (especially when formed as a sealing coating 2140) can exhibit high light absorption.

[0575] A series of samples were fabricated to measure the transmittance of an example material and to visually observe whether an Ag-sealing coating 2140 formed on the exposed surface 11 of this example material. Each sample was prepared by depositing an example material coating approximately 50 nm thick on a glass substrate 10, and then subjecting the exposed surface 11 of the coating to an Ag vapor flux 2432 at a rate of approximately 1 Å / s until a reference layer thickness of approximately 15 nm was reached. Each sample was then visually analyzed, and the transmittance through each sample was measured.

[0576] The molecular structures of the example materials used in the samples in this article are listed in Table 2 below: Table 2

[0577] Those skilled in the art will understand that a sample having little to no deposited material 2431 (including, but not limited to, at least one of metals and alloys, including, but not limited to, at least one of Yb, Ag, Mg, and Ag-containing materials (including, but not limited to, MgAg)) can be substantially transparent, while a sample having a large amount of at least one of metals and alloys deposited thereon (including, but not limited to, as a sealing coating 2140) can exhibit significantly reduced transmittance in some non-limiting examples. Therefore, the performance of various example coatings as patterned coating 310 can be evaluated by measuring the transmittance through the sample, which can be inversely proportional to at least one of the amount of deposited material 2431 deposited thereon and the average layer thickness, including, but not limited to, at least one of metals and alloys, including, but not limited to, in the form of at least one of Yb, Ag, Mg, and Ag-containing materials (including, but not limited to, MgAg), because metal films (including, but not limited to, when formed as a sealing coating 2140) can exhibit high absorption of light.

[0578] Samples in which a substantially closed coating 2140 of deposited material 2431 in the form of Ag was formed were visually identified, and the presence of such a closed coating 2140 in these samples was further confirmed by measuring the transmittance through it, with the samples showing a transmittance of no more than about 50% at a wavelength of about 460 nm.

[0579] Furthermore, for samples in which the formation of a sealing coating 2140 indicating the absence of deposited material 2431 (in the form of Ag) is not observed, the absence of such a sealing coating 2140 in these samples is further confirmed by measuring the EM transmittance through it, which shows a transmittance of at least about 70% (of light at a wavelength of about 460 nm).

[0580] The results are summarized in Table 3 below: Table 3

[0581] Based on the foregoing, it was found that the materials used in the first 7 samples (HT211 to Example Material 2) in Tables 12 and 13, as well as in Example Material 9, may have reduced applicability in some scenarios for suppressing the deposition of Deposition Material 2431 thereon, including but not limited to at least one of metals and alloys, including but not limited to at least one of Yb, Ag, Mg and Ag-containing materials (including but not limited to MgAg).

[0582] On the other hand, it has been found that Example Materials 3 to Example Materials 8 may be suitable in some scenarios as patterned coatings 310 for suppressing the deposition of deposited material 2431 thereon, the deposited material including but not limited to at least one of metals and alloys, including but not limited to at least one of Yb, Ag, Mg and Ag-containing materials (including but not limited to MgAg).

[0583] Deposition contrast In some non-limiting examples, when deposited on substrate 10, the material (including but not limited to patterned material 2311) that can be used as a given at least one of metals and alloys (including but not limited to at least one of Mg, Ag and MgAg) may have substantially high deposition contrast.

[0584] In some non-limiting examples, if substrate 10 tends to act as nucleation promoting coating (NPC) 2620 and a portion thereof is coated with a material (including but not limited to patterned material 2311) that may tend to act as NIC to prevent the deposition of deposited material 2431, the deposited material including but not limited to at least one of metals and alloys (including but not limited to at least one of Yb, Ag, Mg and Ag-containing materials (including but not limited to MgAg), then the coated portion (first portion 1901) and the uncoated portion (second portion 1902) may tend to have at least one of different initial adhesion probabilities and nucleation rates, such that the deposited material 2431 deposited thereon may tend to have different average film thicknesses.

[0585] As used herein, in this scenario, the quotient of the average film thickness of the deposited material 2431 in the second portion 1902 divided by the average film thickness of the deposited material in the first portion 1901 is generally referred to as the deposition contrast. Therefore, if the deposition contrast is substantially high, the average film thickness of the deposited material 2431 in the second portion 1902 can be substantially greater than the average film thickness of the deposited material 2431 in the first portion 1901.

[0586] In some non-limiting examples, when deposited on substrate 10, the material that can be used as a NIC for a given deposition material 2431 (including, but not limited to, patterning material 2311) may have substantially high deposition contrast.

[0587] In some non-limiting examples, there may be a negative correlation between the initial adhesion probability of at least one of the patterned coating 310 and the patterned material 2311 to the deposition of the deposition material 2431 and its deposition contrast, i.e., a low initial adhesion probability may be highly correlated with a high deposition contrast.

[0588] In some non-limiting examples, if the deposition contrast is substantially high, then little or no deposition of material 2431 may occur in the first part 1901 when the deposition of material 2431 is sufficient to form its sealing coating 2140 in the second part 1902.

[0589] In some non-limiting examples, if the deposition contrast is substantially low, a discontinuous layer 2160 of at least one particulate structure 2150 of the deposition material 2431 deposited in the first portion 1901 may exist when the deposition of the deposition material 2431 is sufficient to form a closed coating 2140 in the second portion 1902.

[0590] In some non-limiting examples, when the average layer thickness of the sealing coating 2140 of the deposited material 2431 in the second portion 1902 is substantially small (including but not limited to not exceeding one of about 100 nm, 50 nm, 25 nm and 15 nm, including but not limited to forming nanoparticles (NP) in the first portion 1901), there may be scenarios where it is necessary to form at least one discontinuous layer 2160 of at least one particulate structure 2150 of the deposited material 2431 in the first portion 1901, wherein such NP is required to absorb light, including but not limited to protecting the underlying layer 2610 from light with a wavelength not exceeding about 460 nm.

[0591] In some non-limiting examples, in this scenario, a deposition contrast of approximately 2-100, 4-50, 5-20, and 10-15 may be applied.

[0592] In some non-limiting examples, materials with substantially low deposition contrast relative to the deposition of deposition material 2431 (including, but not limited to, patterned material 2311) may have reduced applicability in some scenarios where substantially high deposition contrast is required, including, but not limited to, scenarios where the average layer thickness of deposition material 2431 in the first part 1901 is large, including, but not limited to, at least one of about 95 nm, 45 nm, 20 nm, 10 nm and 8 nm.

[0593] In some non-limiting examples, materials with substantially low deposition contrast relative to the deposition of deposition material 2431 (including, but not limited to, patterned material 2311) may have reduced applicability in some scenarios requiring substantially high deposition contrast (including, but not limited to, scenarios where at least one of the sealing coating 2140 and high-density particulate structure 2150 is substantially absent in the first part 1901, including, but not limited to, scenarios where the average layer thickness of deposition material 2431 in the second part 1902 is large (including, but not limited to, at least one of about 95 nm, 45 nm, 20 nm, 10 nm and 8 nm), including, but not limited to, scenarios where substantially no light absorption is required in at least one of the visible spectrum and NIR spectrum (including, but not limited to, scenarios where increased transparency to light with a wavelength of at least about 460 nm is required).

[0594] In some non-limiting examples, when the average layer thickness of the sealing coating 2140 of the deposited material 2431 in the second part 1902 is substantially high (including, but not limited to, at least about 95 nm, 45 nm, 20 nm, 10 nm, and 8 nm), materials with substantially low deposition contrast relative to the deposition of the deposited material 2431 (including, but not limited to, patterned material 2311) may be suitable in some scenarios where at least one of the discontinuous layer 2160 of the granular structure 2150 of the deposited material 2431 in the first part 1901 and a low-density granular structure is required. In some non-limiting examples, when the average layer thickness of the deposited material 2431 in the second part 1902 is substantially high, including, but not limited to, at least about 95 nm, 45 nm, 20 nm, 10 nm, and 8 nm, in some scenarios, a deposition contrast between about 2-100, 4-50, 5-20, and 10-15 may be suitable.

[0595] In some non-limiting examples, if a material (including but not limited to patterned material 2311) has a substantially high initial adhesion probability to the deposition of at least one of metals and alloys (including but not limited to at least one of Mg, Ag and MgAg), such a material may tend to have a substantially low deposition contrast.

[0596] Surface energy In some non-limiting examples, such as those relating to the materials used herein, characteristic surface energy may generally refer to the surface energy measured from such material.

[0597] In some non-limiting examples, characteristic surface energy can be measured from a surface formed by a material deposited (coated) in the form of a thin film.

[0598] Various methods and theories for determining the surface energy of solids are known.

[0599] In some non-limiting examples, the surface energy can be calculated (derived) based on a series of contact angle measurements, wherein various liquids can be brought into contact with a solid surface to measure the contact angle between the liquid-gas interface and the surface. In some non-limiting examples, the surface energy of the solid surface can be equal to the surface tension of the liquid having the highest surface tension that fully wets the surface.

[0600] In some non-limiting examples, the critical surface tension of the surface can be determined according to the Zissmann method, such as in WAZisman. Advances in Chemistry Further details are provided...

Claims

1. An electronic device, the electronic device comprising: A display panel extending in a lateral orientation defined by a lateral axis and including at least one signal exchange portion, the at least one signal exchange portion comprising: Multiple emission regions, each emission region corresponding to a (sub)pixel; and Multiple transmission regions, each disposed between adjacent transmission regions in the lateral orientation. A first optoelectronic component and a second optoelectronic component, each optoelectronic component being adapted to perform at least one of the following operations: emitting and receiving light in a wavelength spectrum located in at least one of the visible spectrum, the infrared (IR) spectrum and the near-infrared (NIR) spectrum, and each optoelectronic component having a point spread function (PSF) associated therewith, the point spread function comprising a main lobe and at least one side lobe; in: The first optoelectronic component is disposed behind the first signal exchange portion of the at least one signal exchange portion of the display panel, such that light emitted and received by the first optoelectronic component passes through at least one transmission region of the transmission region of the first signal exchange portion; and The first PSF associated with the first optoelectronic component includes a component associated with the layout of the at least one transmission region of the first signal exchange portion, and differs from the second PSF associated with the second optoelectronic component in at least one of the distribution and intensity of the main lobe and the at least one side lobe.

2. The electronic device of claim 1, wherein the sidelobe pattern of the first PSF has substantially no sidelobes overlapping with the sidelobe pattern of the second PSF.

3. The electronic device of claim 1, wherein the sidelobe pattern of the first PSF at least partially overlaps with the sidelobe pattern of the second PSF.

4. The electronic device according to claim 1 or 3, wherein a first subset of the at least one sidelobe of the first PSF at least partially overlaps with one of the entirety and subset of the sidelobes of the second PSF.

5. The electronic device of claim 4, wherein a second subset of the at least one sidelobe of the first PSF has substantially no sidelobes overlapping with any sidelobes of the second PSF.

6. The electronic device according to any one of claims 1, 3 to 5, wherein each sidelobe of the first PSF and the second PSF corresponds to and at least partially overlaps with the sidelobe of the other of the first PSF and the second PSF.

7. The electronic device according to any one of claims 1 to 6, wherein the overlap between the sidelobe pattern of the first PSF and the sidelobe pattern of the second PSF is no more than one of about 60%, 50%, 40%, 30%, 20%, 25%, 20%, 10%, and 5%.

8. The electronic device according to any one of claims 1 to 7, wherein the intensity of the at least one sidelobe of the first PSF is different from the intensity of the at least one sidelobe of the second PSF in at least one of profile and intensity level.

9. The electronic device according to any one of claims 1 to 8, wherein the main lobe of the first PSF at least partially overlaps with the side lobes of the second PSF.

10. The electronic device according to any one of claims 1 to 9, wherein the distribution of the main lobe of the first PSF is different from the distribution of the main lobe of the second PSF.

11. The electronic device according to any one of claims 1 to 10, wherein the main lobe of the first PSF is different from the main lobe of the second PSF in at least one of profile and intensity level.

12. The electronic device according to any one of claims 1 to 11, wherein the arrangement of the at least one transmission region of the at least one signal exchange portion is characterized by at least one of its size, shape, orientation and pitch.

13. The electronic device according to any one of claims 1 to 12, wherein: The second optoelectronic component is disposed behind the second signal exchange section in the at least one signal exchange section, such that light emitted and received by the second optoelectronic component passes through at least one transmission region in the transmission region of the second signal exchange section, and The second PSF includes a component associated with the layout of the at least one transmission region of the second signal exchange portion, the layout of the at least one transmission region of the second signal exchange portion differing from the layout of the at least one transmission region of the first signal exchange portion in at least one of its size, shape, orientation, and pitch.

14. The electronic device according to any one of claims 1 to 13, wherein the first optoelectronic component and the second optoelectronic component are spaced apart in the lateral orientation of the display panel.

15. The electronic device according to any one of claims 1 to 14, wherein the first optoelectronic component and the second optoelectronic component are substantially located at at least one of: the end of the display panel, its center, and the center of one of the sides and ends of the display panel.

16. The electronic device according to any one of claims 1 to 15, wherein the second optoelectronic component is disposed in a portion of the device that is substantially free of the (sub)pixel of the display panel.

17. The electronic device according to any one of claims 1 to 16, wherein at least one of the first optoelectronic component and the second optoelectronic component comprises at least one of the following: A transmitter adapted to emit light, and A receiver adapted to receive light.

18. The electronic device of claim 17, wherein the second optoelectronic component is a non-display component.

19. The electronic device of claim 18, wherein the second optoelectronic component is the transmitter.

20. The electronic device according to any one of claims 1 to 16, wherein the first optoelectronic component is an under-display camera.

21. The electronic device of claim 13, wherein at least a portion of at least one transmission region of at least one of the first signal exchange portion and the second signal exchange portion has a patterned coating deposited thereon, the patterned coating being adapted to influence the tendency of the evaporation flux of the deposited material to be deposited thereon.

22. The electronic device of claim 21, wherein the at least one transmission region comprises a first portion having a first transmittance and a second portion having a second transmittance, the transmittance being at least equal to the second transmittance.

23. The electronic device of claim 22, wherein the patterned coating is at least deposited in the first portion.

24. The electronic device according to claim 1, wherein: The first optoelectronic component is adapted to generate a first output containing diffraction information associated with the first PSF. The second optoelectronic component is adapted to generate a second output containing diffraction information associated with the second PSF, and The device includes a processor adapted to process the first output and the second output to produce a processed output.

25. The electronic device of claim 24, wherein the processor is adapted to apply corrections to the first output and the second output to generate a first corrected output and a second corrected output.

26. The electronic device according to claim 24 or 25, wherein the correction includes diffraction correction.

27. The electronic device of claim 26, wherein the diffraction correction uses the PSF of one of the first optoelectronic component and the second optoelectronic component to correct diffraction in the output of the other of the first optoelectronic component and the second optoelectronic component.

28. The electronic device according to any one of claims 25 to 27, wherein the processor is adapted to generate the output of the processing by combining the first correction output and the second correction output.

29. The electronic device according to any one of claims 25 to 28, wherein the output of the processing is displayed by the display panel.

30. The electronic device according to any one of claims 25 to 29, wherein the output of said processing includes at least one of the following: image file, video file, 3D image, and 3D video.

31. A display panel, the display panel comprising: The display section includes multiple emission areas. A first signal switching section and a second signal switching section, each signal switching section comprising: Multiple emission regions, each emission region corresponding to a (sub)pixel; and Multiple transmission regions are provided, which allow light in wavelengths within at least one of the visible, infrared (IR), and near-infrared (NIR) spectra to pass through them. Each transmission region is positioned between adjacent emission regions in the lateral orientation of the display panel. in: Each of the first signal exchange section and the second signal exchange section has an associated point spread function (PSF), which includes a main lobe and at least one side lobe. The layout of the transmission region of the first signal exchange portion is different from the layout of the transmission region of the second signal exchange portion, such that the first PSF associated with the first signal exchange portion differs from the second PSF associated with the second signal exchange portion in at least one of the distribution and intensity of the main lobe and at least one of the at least one side lobe.

32. The electronic device of claim 31, wherein the sidelobe pattern of the first PSF has substantially no sidelobes overlapping with the sidelobe pattern of the second PSF.

33. The electronic device of claim 31, wherein the sidelobe pattern of the first PSF at least partially overlaps with the sidelobe pattern of the second PSF.

34. The electronic device according to claim 31 or 33, wherein a first subset of the at least one sidelobe of the first PSF at least partially overlaps with one of all and a subset of the sidelobes of the second PSF.

35. The electronic device of claim 34, wherein a second subset of the at least one sidelobe of the first PSF has substantially no sidelobes overlapping with any sidelobe of the second PSF.

36. The electronic device according to any one of claims 31, 33 to 35, wherein each sidelobe of the first PSF and the second PSF corresponds to and at least partially overlaps with the sidelobe of the other of the first PSF and the second PSF.

37. The electronic device according to any one of claims 31 to 36, wherein the overlap between the sidelobe pattern of the first PSF and the sidelobe pattern of the second PSF is no more than one of about 60%, 50%, 40%, 30%, 20%, 25%, 20%, 10%, and 5%.

38. The electronic device according to any one of claims 31 to 37, wherein the intensity of the at least one sidelobe of the first PSF is different from the intensity of the at least one sidelobe of the second PSF in at least one of profile and intensity level.

39. The electronic device according to any one of claims 31 to 38, wherein the main lobe of the first PSF at least partially overlaps with the side lobes of the second PSF.

40. The electronic device according to any one of claims 31 to 39, wherein the distribution of the main lobe of the first PSF is different from the distribution of the main lobe of the second PSF.

41. The electronic device according to any one of claims 31 to 40, wherein the main lobe of the first PSF is different from the main lobe of the second PSF in at least one of profile and intensity level.

42. The electronic device according to any one of claims 31 to 41, wherein the layout of the transmission region of each signal exchange portion is characterized by at least one of its size, shape, orientation and pitch.

43. The electronic device according to any one of claims 31 to 42, wherein at least a portion of at least one transmission region of at least one of the first signal exchange portion and the second signal exchange portion has a patterned coating deposited thereon, the patterned coating being adapted to influence the tendency of the evaporation flux of the deposited material to be deposited thereon.

44. The electronic device of claim 43, wherein the at least one transmission region comprises a first portion having a first transmittance and a second portion having a second transmittance, the first transmittance being at least equal to the second transmittance.

45. The electronic device of claim 44, wherein the patterned coating is at least deposited in the first portion.

46. ​​A method for operating an electronic device, the electronic device comprising a display panel and a first optoelectronic component and a second optoelectronic component, each optoelectronic component being adapted to perform at least one of the following operations: emitting and receiving light in a wavelength spectrum located within at least one of the visible spectrum, the infrared (IR) spectrum, and the near-infrared (NIR) spectrum, and generating an output containing diffraction information associated with its point spread function (PSF), wherein: The first optoelectronic component is disposed behind a first signal exchange portion including a plurality of transmissive areas of the display panel, such that a first PSF associated with the first optoelectronic component includes a component associated with the layout of the transmissive areas of the first signal exchange portion, and is different from a second PSF associated with the second optoelectronic component. The method includes the following actions: The first output and the second output of the optoelectronic component are processed to generate the processed output.

47. The method of claim 46, wherein the second optoelectronic component is disposed behind a second signal exchange portion comprising a plurality of transmissive regions of the display panel, such that a second PSF associated with the second optoelectronic component includes a component associated with the layout of the transmissive regions of the second signal exchange portion.

48. The method of claim 46 or 47, wherein the processing action includes processing the output of the other of the first optoelectronic component and the second optoelectronic component using the PSF of one of the first optoelectronic component and the second optoelectronic component.

49. The method according to any one of claims 46 to 48, wherein the processing action includes the action of correcting the first output and the second output to generate a first corrected output and a second corrected output.

50. The method of claim 49, wherein the correction action includes diffraction correction.

51. The method according to any one of claims 48 to 50, wherein the diffraction correction uses the PSF of one of the first optoelectronic component and the second optoelectronic component to correct the diffraction contained in the output of the other of the first optoelectronic component and the second optoelectronic component.

52. The method according to any one of claims 48 to 51, wherein the correction action is performed individually for each of the first output and the second output.

53. The method according to any one of claims 48 to 52, wherein the correction action is performed by cross-referencing the first output with the second output.

54. The method according to any one of claims 50 to 53, wherein the processing action includes combining the first correction output and the second correction output to generate a combined output.

55. The method of claim 54, wherein the combining action comprises combining the first correction output and the second correction output by at least one of a fusion process and a splicing process.

56. The method according to any one of claims 48 to 55, wherein the correction action is preceded by an action of preprocessing the first output and the second output.

57. The method according to any one of claims 48 to 56, wherein the combined action is followed by an action of post-processing the combined output.

58. The method according to any one of claims 46 to 59, the method comprising the action of displaying the output of the processing on the display panel.

59. The method according to any one of claims 46 to 58, wherein the output of said processing includes at least one of the following: image file, video file, 3D image, and 3D video.

60. The method according to any one of claims 46 to 59, wherein at least one of the first optoelectronic component and the second optoelectronic component comprises at least one of the following: A transmitter adapted to emit light, and A receiver adapted to receive light.

61. The method of claim 60, wherein the second optoelectronic component is a non-display under-display component.

62. The method of claim 61, wherein the second optoelectronic component is the transmitter.

63. The method according to any one of claims 46 to 62, wherein the first optoelectronic component is an under-display camera.

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