Optical device based on embedded quantum random number generator

Abstract

An optical device based on an embedded quantum random number generator is provided. An optical device configured for quantum random number generation may have an integrated structure including at least: a light source configured to emit a light beam; a photodetector configured to detect light based on a detection standard; and a polarizer disposed between the light source and the photodetector. The light source, the photodetector and the polarizer are directly integrated or embedded in the integrated structure. The polarizer is configured to process the light based on a polarization criterion, including passing or discarding light having a particular polarization. The optical device is configured to facilitate or implement quantum random number generation based on detection of the light beam by the photodetector based on the detection criteria.

Description

Technical Field

[0001] Various aspects of this disclosure relate to solutions based on optical communication. More specifically, various embodiments based on this disclosure relate to methods and systems for implementing and utilizing devices based on embedded quantum random number generators (QRNGs). Background Technology

[0002] By comparing this system with some aspects of this disclosure set forth in the remainder of this application, with reference to the accompanying drawings, the limitations and disadvantages of conventional random number generators will become apparent to those skilled in the art. Summary of the Invention

[0003] Basically as shown and / or described in conjunction with at least one of the accompanying drawings, and as set forth more fully in the claims, systems and methods for devices based on embedded quantum random number generators (QRNGs) are provided.

[0004] These and other advantages, aspects and novel features of this disclosure, as well as details of the embodiments shown therein, will be more fully understood from the following description and accompanying drawings. Attached Figure Description

[0005] Figure 1 An exemplary system incorporating a quantum random number generator (QRNG) is shown.

[0006] Figure 2 An example of a device for a quantum random number generator (QRNG) based on an integrated vertical-cavity surface-emitting laser (VCSEL) is shown.

[0007] Figure 3 An example of a device for a quantum random number generator (QRNG) based on an integrated edge-emitting laser (EEL) is shown. Detailed Implementation

[0008] This disclosure relates to solutions related to optical devices. In particular, embodiments based on this disclosure relate to enhanced solutions for systems or devices based on quantum random number generation. In this aspect, random number generation is a process by which one or more numbers (e.g., sequences) are generated in a way that cannot be reasonably predicted, which is at least no better than randomly generating these numbers. Random number generation is typically accomplished using a random number generator (RNG). In this aspect, the random number generator can be a hardware-based component in which random number generation can be performed or completed based on and / or according to the current values ​​of some properties (e.g., physical properties) that are constantly changing in a way that is practically impossible to model. For quantum random number generation, the properties used for the random number generation process can be quantum phenomena associated with and / or tracked within the component. Such a component can be referred to as a quantum random number generator (QRNG).

[0009] The solutions based on this disclosure provide more compact and cost-effective QRNGs, particularly through the use of polarization-based modules incorporating optimized package designs. In this aspect, suitable optical emitter components can be combined with other desired components, particularly for facilitating polarization-based detection. In various embodiments, the optical emitter components may include devices based on vertical-cavity surface-emitting lasers (VCSELs) or edge-emitting lasers (EELs). Nevertheless, while the various embodiments described herein are VCSEL-based or EEL-based implementations, this disclosure is not limited to the use of such optical emitters, and any suitable optical emitter component can be used, provided it can be configured to provide light emission with suitable polarization characteristics (e.g., optical mode competition).

[0010] For example, in VCSEL-based implementations, the polarization of light emitted by the VCSEL can be used to facilitate quantum random number generation. In this respect, VCSELs, which do not possess any polarization stability characteristics, typically flip between polarizations under certain driving conditions. If such a VCSEL is carefully operated under pulsed conditions, the mode competition for the laser polarization of each pulse can essentially be considered quantum. The operating conditions can be carefully tuned (e.g., via current levels) so that polarization selection can provide approximately a 50 / 50 probability. Therefore, using a polarizer set in the correct direction, followed by a photodetector (e.g., a photodiode), can be a means of providing random quantum generation bits. EEL-based designs can operate in a substantially similar manner, wherein mode selection based on the polarization of light emitted by the EEL is similarly used to provide or otherwise facilitate quantum-like random number generation.

[0011] However, polarization-based QRNG modules may need to meet particularly challenging requirements. For example, package height and size can be extremely challenging, especially for certain consumer applications. Thus, if the package size or height exceeds certain values ​​(e.g., within a 5 mm thickness range), the package may become too bulky. Furthermore, cost and parallelization can also be issues for certain consumer applications and / or operational requirements (e.g., high throughput entropy data rates). Conventional package designs (if available) may not be suitable for meeting these requirements.

[0012] Therefore, in various exemplary embodiments based on this disclosure, an enhanced polarization-based QRNG module is provided, wherein such a module incorporates an optimized packaging design, i.e., by integrating the light emitter and other required components into an integrated structure. This integrated structure occupies a smaller area and is less expensive than any existing solution.

[0013] Exemplary embodiments of this disclosure and their related details are shown in the accompanying drawings and are described below with respect to the drawings.

[0014] Figure 1 An exemplary system incorporating a quantum random number generator (QRNG) is shown. Figure 1 The image shows system 100.

[0015] System 100 may include suitable circuitry configured to perform various functions and / or operations. For example, functions and / or operations may include processing functions and / or operations, storage functions and / or operations, control functions and / or operations, communication functions and / or operations, and / or any combination thereof. Therefore, the circuitry in system 100 may include processing circuitry, storage circuitry, control circuitry, communication circuitry, and / or any combination thereof.

[0016] In some cases, performing at least some of the functions and / or operations supported by system 100 may require random number generation. As mentioned above, sometimes a dedicated component (random number generator (RNG)) can be used to provide or otherwise facilitate random number generation. In this regard, various types of RNGs can be provided or used. One exemplary type is the quantum random number generator (QRNG).

[0017] For example, such as Figure 1 As shown, system 100 includes a quantum random number generator (QRNG) 110, which can be configured to perform quantum random number generation. In this aspect, as described above, using quantum random number generation, the random number generation process can be driven by quantum phenomena associated with and / or tracked within the component.

[0018] According to this disclosure, quantum random number generators (e.g., QRNG 110) can be implemented using enhanced packaging designs. Specifically, as described above, solutions based on this disclosure provide compact and cost-effective QRNGs, particularly polarization-based ones, such as by using polarization-based modules for quantum random number generation that incorporate optimized packaging designs, i.e., by using integrated structures.

[0019] In this respect, in some cases, a quantum random number generator can be implemented as a relatively small module (e.g., with free-space optics / mirrors and a polarizer). Such a small module can use a VCSEL as a light source. In this respect, the VCSEL can be used at a bistable point of polarization. Thus, the polarization of each pulse can be determined by competition of quantum gain in stimulated emission. Therefore, projected readings (e.g., using a polarizer and a photodiode) can produce a value '0' or a value '1' that can be used in the random number generation process. Thus, "quantum entropy" can provide one of the best types of quantum random number generators available.

[0020] Nevertheless, such small modules still have some limitations and drawbacks. For example, although the size of such modules is relatively small (e.g., in the range of 3×5×5 mm), this size is still relatively bulky, especially for certain applications and / or platforms.

[0021] The solutions based on this disclosure address these limitations and drawbacks, such as by allowing for further size reduction without compromising performance. In particular, in various embodiments based on this disclosure, quantum random number generators (e.g., QRNG 110) can be implemented using polarization-based modules with integrated structures. The integrated structure can be based on silicon nitride (SiN) or silicon photonics (SiP). Such integrated structures are more desirable due to their significantly higher cost-effectiveness compared to non-integrated structures. Furthermore, in many cases, parallelization can be achieved using such integrated structure-based designs. The light source used in such integrated structures can be a vertical-cavity surface-emitting laser (VCSEL) or an edge-emitting laser (EEL). Nevertheless, any suitable light emitter can be used to provide light whose polarization can be used for quantum random number generation.

[0022] For example, in some exemplary embodiments, a VCSEL-based integrated structure is used. In this aspect, in such an implementation, the VCSEL can be coupled to an optical waveguide structure (e.g., a SiP or SiN-based structure), which also includes a polarizer and a photodetector (PD) (e.g., a photodiode). The VCSEL can be integrated into the waveguide structure or heterogeneously integrated into the waveguide structure (e.g., coupled to the waveguide structure). The VCSEL can be placed in an inverted configuration, i.e., the VCSEL is placed on top of the waveguide structure but configured to emit light into the waveguide structure from the bottom (downward). To facilitate light coupling within the waveguide structure, the VCSEL can be coupled to suitable components integrated into the waveguide (e.g., gratings, mirrors, couplers, etc.). The VCSEL can also include structures in the emission window to facilitate coupling (e.g., collimating lenses or metallic lenses, phase shifters, etc.). The VCSEL can be single-mode (SM) or multimode. In this aspect, SM operation is better for the polarizer, but this disclosure is not limited to the use of SM-based VCSELs. Examples of VCSEL-based integrated structures are as follows: Figure 2 As shown, and relative to Figure 2 Provide a detailed description.

[0023] In some other exemplary embodiments, a light emitter source configured for lateral emission of light can be used. This can include an edge-emitting laser (EEL), or even a VCSEL arranged in a manner capable of enabling lateral emission (e.g., a VCSEL flipped 90 degrees). ° And it is positioned on one side of the integrated structure, with the emitter top of the VCSEL abutting against the waveguide for positioning. In this embodiment, coupling can be performed directly, using docking coupling, or utilizing a waveguide adapter to increase coupling. In some cases, lens coupling is also feasible. An example of an EEL-based integrated structure is shown below. Figure 3 As shown, and relative to Figure 3 Provide a detailed description.

[0024] In various embodiments, the polarizer used in the integrated structure (including, for example, VCSEL-based integrated structures (top-side or flipped) and EEL-based integrated structures) can be a transverse electric / transverse magnetic (TE / TM) beam splitter configured to discard one polarization, or other polarizer schemes can be utilized. In some cases, the polarizer can be configured to operate within a temperature and wavelength range compatible with a specific desired application.

[0025] In various embodiments, the detection performed by the photodetector can be accomplished using a silicon-germanium (SiGe) integrated photodiode, a heterogeneous integrated photodiode, or any other suitable detection design / scheme. Nevertheless, regardless of the design / scheme used, the photodetector should only detect one polarization after the polarizer.

[0026] Figure 2 An example of a device for a quantum random number generator (QRNG) based on an integrated vertical-cavity surface-emitting laser (VCSEL) is shown. (Reference) Figure 2 A device (hereinafter referred to as the “device”) 200 for a quantum random number generator (QRNG) based on a vertical cavity surface-emitting laser (VCSEL) is shown.

[0027] like Figure 2 As shown in the exemplary embodiment illustrated, the device 200 includes a structure 210, a VCSEL 220, a polarizer 230, a photodetector (PD) 240, a waveguide 250, and a coupler 260.

[0028] Structure 210 may include silicon nitride (SiN) or silicon photonics (SiP) materials to provide a structure for integrating or embedding other components.

[0029] VCSEL 220 may include a semiconductor laser diode-based structure configured to provide a laser beam emitted vertically from the top surface of the semiconductor structure. Within device 200, VCSEL 220 is arranged in an epitaxial downward manner, i.e., to allow downward emission of light into structure 210. VCSEL 220 can be of any suitable type. Various types of VCSELs can be used in this respect, and this disclosure is not limited to a particular type; therefore, any suitable VCSEL can be used. A VCSEL with bottom-side emission can also be used.

[0030] For example, a VCSEL 220 may include a distributed Bragg reflector (DBR) based structure that can be configured to operate using mirrors parallel to the top surface and an active region comprising one or more quantum wells for generating laser light between the mirrors. A DBR structure may be disposed on top of a substrate layer and a heat dissipation layer. The planar DBR mirrors may include layers of materials based on alternating high and low refractive indices (RI). The thickness of each layer can be set to produce high reflectivity. For example, a thickness of one-quarter of the laser wavelength in the material can produce optical reflectivity greater than 99%. The use of high reflectivity can be used to balance the short axial length of the gain region. In some embodiments, p-type and n-type regions may be embedded between the DBR mirrors to form a diode junction. This involves more complex semiconductor processing to ensure electrical contact with the active layers / regions, but can eliminate electrical power losses in the DBR structure. Nevertheless, this disclosure is not limited to any particular VCSEL design or implementation, and any suitable design or implementation can be used.

[0031] As described herein, polarizer 230 may include suitable materials for providing polarization selection, i.e., selectively passing through or otherwise processing the polarization propagation based on radiant energy (particularly light, such as laser light emitted by VCSEL 220). Polarizer 230 may be integrated within the structure itself (e.g., within structure 210, particularly within waveguide 250 using one, or directly integrated into photodetector 240).

[0032] The photodetector (PD) 240 may include a suitable circuitry for detecting light or other electromagnetic radiation. In this respect, various mechanisms and / or techniques can be used to provide the detection functionality offered by the photodetector, such as using photoelectric or photochemical effects, spectral response, etc., and this disclosure is not limited to any particular type or mechanism. In an exemplary embodiment, the PD 240 may include a photodiode. The PD 240 may be integrated or embedded within the structure itself (e.g., structure 210), such as... Figure 2 As shown in the embodiment illustrated. Alternatively, PD 240 may be a separate structure coupled (or otherwise attached) to the structure (e.g., at the end of the structure), wherein the emitted light will terminate after passing through the polarizer.

[0033] Waveguide 250 may comprise a suitable material that allows the propagation of radiated energy (particularly light, such as laser light emitted by VCSEL 220). As mentioned above, waveguide 250 may be a SiN or SiP optical waveguide. In some cases, at least a portion of waveguide 250 may be omitted, such as portions between other components in the integrated structure that are directly attached to each other (coupler 260, polarizer 230, and PD 240). In some cases, waveguide 250 may be omitted as a whole. This omission is feasible where the integrated structure allows emitted light to propagate into polarizer 230 (from coupler 260) and then out of polarizer 230 and into PD 240.

[0034] Coupler 260 may include suitable material for coupling light from VCSEL 220 into a propagation path (e.g., waveguide 250) within the integrated structure. In this aspect, coupler 260 may include suitable material that allows reflection of radiant energy (particularly light). For example, coupler 260 may be arranged such that it can reflect light emitted downwards by VCSEL 220, allowing the light to propagate through waveguide 250. For example, coupler 260 may include a mirror arranged at a 45° angle to provide the desired reflection. Nevertheless, this disclosure is not limited to mirror-like components, and therefore any suitable component using any suitable technique that provides the necessary processing (e.g., reflection) of light emitted by VCSEL 220 for propagation within waveguide 250 can be utilized.

[0035] In an exemplary operation, device 200 can be used to provide and / or support quantum random number generation. In this aspect, during such operation, VCSEL 220 can emit light downwards, which is then laterally reflected via coupler 260 to propagate within waveguide 250. Polarization selection based on the emitted light can then be used, for example, to facilitate quantum random number generation. In this aspect, as described above, polarization selection (i.e., mode selection of polarization) can be considered essentially quantum. Thus, the polarization of the light emitted by VCSEL 220 can be used as a quantum phenomenon to drive quantum random number generation. For this purpose, polarizer 230 can be used to provide polarization selection applied to the light emitted by VCSEL 220, such as when the emitted light propagates through polarizer 230, and then using the output of PD 240 based on the polarization selection of polarizer 230, to provide polarization-based detection, for example, providing an indication of different quantum states in response to the detection (or non-detection) of light passing through polarizer 230 (or being blocked by the polarizer).

[0036] Using integrated structures, such as the VCSEL-based integrated structure of device 200, improved devices can be produced. In this respect, such as Figure 2 As shown, the VCSEL-based integrated structure (e.g., similar to the integrated structure used in device 200) can be very compact, especially in the z-direction (i.e., much thinner than any existing design). Furthermore, some components can be integrated and / or embedded together (e.g., a polarizer can be embedded within a waveguide) to increase integration density. Additionally, this structure can be more easily integrated onto a chipset. These characteristics result in a very compact and cost-effective device.

[0037] However, a potential problem with VCSEL-based integrated structures is the potential for high levels of feedback within the VCSEL. Therefore, in some cases, VCSEL-based integrated structures can be configured (e.g., by adjusting the individual components of the integrated structure) to address and mitigate this problem.

[0038] Figure 3 An example of a device for a quantum random number generator (QRNG) based on an integrated edge-emitting laser (EEL) is shown. (Reference) Figure 3 The device (hereinafter referred to as the “device”) 300, which is based on an edge-emitting laser (EEL) quantum random number generator (QRNG), is shown.

[0039] like Figure 3 As shown in the exemplary embodiment illustrated, the device 300 includes a structure 310, a quantum well (QW) laser 320, a polarizer 330, a photodetector (PD) 340, and a waveguide 350.

[0040] Structure 310 may include silicon nitride (SiN) or silicon photonics (SiP) materials to provide a structure for integrating or embedding other components.

[0041] QW laser 320 may include a semiconductor laser diode-based structure configured to provide a laser beam emitted from one side (edge) of the semiconductor structure. Specifically, the semiconductor laser may include one or more thin layers of low-bandgap material sandwiched between high-bandgap layers (e.g., including n-type and p-type layers), causing the one or more thin layers to act as quantum wells, thereby promoting edge emission. QW laser 320 may be a strain-free QW laser.

[0042] As described herein, polarizer 330 may include suitable materials for providing polarization selection, i.e., selectively passing through or otherwise processing the polarization propagation of radiant energy (particularly light, such as laser light emitted by QW laser 320) based on the polarization propagation. Polarizer 330 may be integrated within the structure itself (e.g., within structure 310, particularly within waveguide 350 using one).

[0043] The photodetector (PD) 340 may include a suitable circuitry for detecting light or other electromagnetic radiation. In this respect, various mechanisms and / or techniques can be used to provide the detection functionality offered by the photodetector, such as using photoelectric or photochemical effects, spectral response, etc., and this disclosure is not limited to any particular type or mechanism. In an exemplary embodiment, the PD 340 may include a photodiode. The PD 340 may be integrated or embedded within the structure itself (e.g., structure 310). Alternatively, the PD 340 may be a separate structure coupled (or otherwise attached) to the structure (e.g., at the end of waveguide 350), such as... Figure 3 The embodiments shown are illustrated in the figure.

[0044] Waveguide 350 may comprise a suitable material that allows the propagation of radiated energy (particularly light, such as laser light emitted by QW laser 320). As mentioned above, waveguide 350 may be a SiN or SiP optical waveguide. Figure 3 As shown in the embodiment illustrated, waveguide 350 can be disposed on top of structure 310. This is because quantum well (QW) lasers (e.g., such as...) Figure 3 The QW laser 320 shown can typically contain a quantum well on the top side of the laser device, thus requiring the addition of a waveguide 350 on top of structure 310 to provide a propagation path. However, this disclosure is not limited to this design. For example, in some cases, the QW laser 320 can be flipped and at least partially embedded in structure 310. In such a structure, waveguide 350 can be embedded or integrated into structure 310.

[0045] In an exemplary operation, device 300 can be used to provide and / or support quantum random number generation. In this aspect, during such operation, QW laser 320 can emit light laterally, thus directly utilizing waveguide 350 for propagation. Polarization selection based on the emitted light can then be used, for example, to facilitate quantum random number generation. In this aspect, as described above, polarization selection (i.e., mode selection of polarization) can be considered essentially quantum. Thus, the polarization of the light emitted by QW laser 320 can be used as a quantum phenomenon to drive quantum random number generation. For this purpose, polarizer 330 can be used to provide polarization selection applied to the light emitted by QW laser 320, such as when the emitted light propagates through polarizer 330, and then using the output of PD 340 based on the polarization selection of polarizer 330, to provide polarization-based detection, for example, providing an indication of different quantum states in response to the detection (or non-detection) of light passing through polarizer 330 (or being blocked by the polarizer).

[0046] Using integrated structures, such as the EEL-based integrated structure of device 300, improved devices can be produced. In this respect, such as Figure 3 As shown, EEL-based integrated structures (e.g., similar to those used in device 300) can be very compact, especially in the z-direction (i.e., much thinner than any existing design). Furthermore, some components can be integrated and / or embedded together (e.g., a polarizer can be embedded within a waveguide) to increase integration density. Additionally, such structures can be more easily integrated onto chipsets. These characteristics result in very compact and cost-effective devices.

[0047] However, a potential problem with EEL-based integrated structures is that under certain conditions (such as when the EEL begins to deviate from mode degeneracy between the TE and TM modes (e.g., due to the effects of heating or strain)), there may not be a means to control mode competition. Therefore, in some cases, EEL-based integrated structures can be configured (e.g., by adjusting the individual components of the integrated structure) to address and mitigate this problem.

[0048] In some exemplary embodiments, the polarizer used in the integrated structure based on this disclosure may be a beam splitter (rather than being configured to select / pass only a specific polarization), and the two polarizations may be recorded on different photodiodes. This allows for more precise monitoring of the distribution.

[0049] In some exemplary embodiments, the light source used in the integrated structure based on the present disclosure may include an unstrained EEL, which may have mixed TE and TM polarization, for example, if carefully designed.

[0050] In some exemplary embodiments, the waveguides used in the integrated structure based on embodiments of this disclosure may be configured or otherwise used to perform g （1） A method similar to autocorrelation is used to demonstrate the "quantum nature" of the distribution.

[0051] In some exemplary embodiments, multiple integrated structures can be used. These integrated structures can be parallelized, for example, by utilizing an array of VCSELs or EELs coupled to a waveguide / polarizer / PD. Using this parallelization approach allows for increased entropy generation with a very small footprint.

[0052] According to this disclosure, an optical device is configured for quantum random number generation, wherein the optical device includes an integrated structure comprising: a light source configured to emit a light beam; a photodetector configured to detect the light based on a detection standard; and a polarizer disposed between the light source and the photodetector. The light source, photodetector, and polarizer are directly integrated or embedded in the integrated structure; the polarizer is configured to process the light based on a polarization standard, wherein the polarization standard includes passing or discarding light with a specific polarization; and the optical device is configured to facilitate or realize quantum random number generation based on the detection of the light beam by the photodetector based on the detection standard.

[0053] In an exemplary embodiment, the integrated structure includes silicon nitride (SiN) or silicon photonics (SiP) material.

[0054] In an exemplary embodiment, the integrated structure also includes an optical waveguide.

[0055] In an exemplary embodiment, the optical waveguide is configured to provide an optical path from the light source through the polarizer and to the photodetector.

[0056] In an exemplary embodiment, the polarizer is embedded or integrated into the optical waveguide.

[0057] In an exemplary embodiment, the integrated structure also includes a coupler configured to couple a light source.

[0058] In an exemplary embodiment, the coupler is configured to adjust the direction of the light beam emitted by the light source.

[0059] In an exemplary embodiment, the coupler includes a mirror configured to reflect a light beam emitted by a light source.

[0060] In an exemplary embodiment, the photodetector includes a photodiode.

[0061] In an exemplary embodiment, the photodiode includes a silicon-germanium (SiGe) integrated photodiode or a heterogeneous integrated photodiode.

[0062] In an exemplary embodiment, the photodiode is configured to detect only one polarization.

[0063] In an exemplary embodiment, the polarizer includes a transverse electric / transverse magnetic (TE / TM) beam splitter.

[0064] In an exemplary embodiment, the polarizer is configured to record the polarization of light that passes through and is blocked.

[0065] In an exemplary embodiment, the polarizer is configured to operate within a predefined temperature and / or wavelength range compatible with one or more specific applications.

[0066] In an exemplary embodiment, the light source includes a vertical cavity surface-emitting laser (VCSEL).

[0067] In an exemplary embodiment, a vertical cavity surface-emitting laser (VCSEL) is disposed in an inverted configuration on the top side of the integrated structure to emit a beam downward into the integrated structure.

[0068] In an exemplary embodiment, a vertical-cavity surface-emitting laser (VCSEL) is disposed on one side of the integrated structure, and wherein the VCSEL is flipped 90° to emit a beam downward into the integrated structure.

[0069] In an exemplary embodiment, the light source includes an edge-emitting laser (EEL).

[0070] In exemplary embodiments, the edge-emitting laser (EEL) is directly coupled, uses docking coupling, uses a waveguide adapter, or uses lens coupling.

[0071] In an exemplary embodiment, the edge-emitting laser (EEL) includes a strain-free EEL that emits light with mixed transverse electric (TE) and transverse magnetic (TM) polarization.

[0072] As used herein, “and / or” means any one or more items in the list connected by “and / or”. As an example, “x and / or y” means any element in the three-element set {(x), (y), (x, y)}. In other words, “x and / or y” means “one or both of x and y”. As another example, “x, y and / or z” means any element in the seven-element set {(x), (y), (z), (x, y), (x, z), (y, z), (x, y, z)}. In other words, “x, y and / or z” means “one or more of x, y, and z”. As used herein, the term “exemplary” means used as a non-limiting example, instance, or illustration. As used herein, the terms “for example” and “such” introduce a list of one or more non-limiting examples, instances, or illustrations.

[0073] As used herein, the terms “circuit” and “circuit system” refer to physical electronic components (e.g., hardware) and any software and / or firmware (“code”) that can configure, be executed by, and / or otherwise associate with the hardware. As used herein, for example, a particular processor and memory (e.g., volatile or non-volatile memory devices, general-purpose computer-readable media, etc.) may include a first “circuit” when executing one or more lines of code, and may include a second “circuit” when executing a second or more lines of code. Furthermore, a circuit may include analog and / or digital circuit systems. For example, such a circuit system can operate on analog and / or digital signals. It should be understood that a circuit may reside in a single device or chip, on a single motherboard, in a single chassis, in multiple housings located in a single geographic location, or in multiple housings distributed across multiple geographic locations, etc. Similarly, for example, the term “module” may refer to physical electronic components (e.g., hardware) and any software and / or firmware (“code”) that can configure, be executed by, and / or otherwise associate with the hardware.

[0074] As used herein, whenever a circuit system or module includes the hardware and code required to perform a function (if necessary), and regardless of whether the execution of the function is disabled or not enabled (e.g., through user-configurable settings, factory tuning, etc.), the circuit system or module is "operable" to perform the function.

[0075] Other embodiments of the invention may provide a non-transient computer-readable medium and / or storage medium, and / or a non-transient machine-readable medium and / or storage medium having stored machine code and / or a computer program having at least one code segment executable by a machine and / or a computer, thereby enabling the machine and / or a computer to perform the processes described herein.

[0076] According to various embodiments of the invention, a computer program product may also be embedded, which includes all features capable of implementing the methods described herein and, when loaded into a computer system, is capable of executing those methods. In this context, a computer program means any representation in any language, code, or notation of an instruction set designed to enable a system with information processing capabilities to perform a particular function directly or after either or both of the following: a) being translated into another language, code, or notation; or b) being reproduced in a different material form.

[0077] While this method and / or system has been described with reference to certain embodiments, those skilled in the art will understand that various changes can be made and equivalents can be substituted without departing from the scope of this method and / or system. Furthermore, many modifications can be made to adapt particular situations or materials to the teachings of this disclosure without departing from the scope of this disclosure. Therefore, it is intended that this method and / or system be limited to the specific embodiments disclosed, but rather that this method and / or system encompass all embodiments falling within the scope of the appended claims.

Claims

1. An optical device configured for generating quantum random numbers, the optical device comprising: The integrated structure includes: The light source is configured to emit a beam of light; The photodetector is configured to detect light based on a detection standard; and A polarizer is disposed between the light source and the photodetector; The light source, the photodetector, and the polarizer are directly integrated or embedded into the integrated structure. The polarizer is configured to process light based on a polarization standard, which includes passing or discarding light with a specific polarization; and The optical device is configured to facilitate or enable quantum random number generation based on the detection of the light beam by the photodetector according to the detection standard.

2. The optical device according to claim 1, wherein, The integrated structure includes silicon nitride or silicon photonic materials.

3. The optical device according to claim 1, wherein, The integrated structure also includes an optical waveguide.

4. The optical device according to claim 3, wherein, The optical waveguide is configured to provide an optical path from the light source through the polarizer to the photodetector.

5. The optical device according to claim 3, wherein, The polarizer is embedded or integrated into the optical waveguide.

6. The optical device according to claim 1, wherein, The integrated structure also includes a coupler configured to couple the light source.

7. The optical device according to claim 6, wherein, The coupler is configured to adjust the direction of the light beam emitted by the light source.

8. The optical device according to claim 7, wherein, The coupler includes a mirror configured to reflect the light beam emitted by the light source.

9. The optical device according to claim 1, wherein, The photodetector includes a photodiode.

10. The optical device according to claim 9, wherein, The photodiode includes a silicon-germanium integrated photodiode or a heterogeneous integrated photodiode.

11. The optical device according to claim 9, wherein, The photodiode is configured to detect only one polarization.

12. The optical device according to claim 1, wherein, The polarizer includes a transverse electric / transverse magnetic beam splitter.

13. The optical device according to claim 1, wherein, The polarizer is configured to record the polarization of light that passes through and is blocked.

14. The optical device according to claim 1, wherein, The polarizer is configured to operate within a predefined temperature and / or wavelength range compatible with one or more specific applications.

15. The optical device according to claim 1, wherein, The light source includes a vertical cavity surface-emitting laser.

16. The optical device according to claim 15, wherein, The vertical cavity surface-emitting laser is disposed in an inverted configuration on the top side of the integrated structure to emit the beam downward into the integrated structure.

17. The optical device according to claim 15, wherein, The vertical-cavity surface-emitting laser is disposed on one side of the integrated structure, and wherein the vertical-cavity surface-emitting laser is flipped 90 degrees. ° This is to direct the beam downwards into the integrated structure.

18. The optical device according to claim 1, wherein, The light source includes an edge-emitting laser.

19. The optical device according to claim 18, wherein, The edge-emitting laser can be directly coupled, coupled using docking, coupled using a waveguide adapter, or coupled using a lens.

20. The optical device according to claim 18, wherein, The edge-emitting laser includes a strain-free edge-emitting laser that emits light with mixed transverse electric and transverse magnetic polarization.

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