Millimeter wave communication sensing integrated circuit

Abstract

The invention relates to the field of millimeter-wave wireless communication, and discloses a millimeter-wave communication sensing integrated circuit, which comprises a local oscillation circuit used for generating a local oscillation signal; the flux-inductance fusion frequency mixer circuit is connected with the local oscillation circuit, is used for receiving the local oscillation signal, and can work as a frequency mixer in a communication mode and work as an amplifier in a sensing mode through circuit switching; the flux-inductance fusion power amplifier circuit is connected with the flux-inductance fusion mixer circuit, is designed by adopting a compound semiconductor process, and can respectively work in a sensing mode and a communication mode in a voltage switching mode; and the antenna is in circuit connection with the flux-inductance fusion power amplifier and is used for radiating the amplified signal. The integrated circuit has the advantages of being compact in structure and high in circuit multiplexing degree. The amplifier circuit adopts a compound process design, and other circuits adopt a silicon-based process design, so that the amplifier has the advantages of high transmitting power, high integration level and flexible numerical control.

Description

Technical Field

[0001] This invention relates to the field of millimeter-wave wireless communication, and in particular to a circuit that integrates communication and sensing in the millimeter-wave band. Background Technology

[0002] Integrated communication and sensing technology refers to wireless communication devices that not only possess communication functions but also radar detection and sensing capabilities, and is considered a core application technology for next-generation mobile communications. According to the IEEE 802.11 protocol, the frequency band for millimeter-wave wireless local area networks is primarily 40-70 GHz, and this band has also been allocated for radar detection and sensing applications. Therefore, designing a millimeter-wave integrated communication and sensing circuit is of great significance.

[0003] However, integrating communication and sensing functions at the radio frequency (RF) circuit level faces numerous challenges. This stems primarily from the different performance and architectural requirements imposed on core RF circuits, particularly power amplifiers and mixers, by the two functional modes. Communication mode requires a mixer and amplifiers with high back-off efficiency, while radar mode can operate without a mixer but requires amplifiers capable of generating high transmit power. Traditional single power amplifier and mixer designs struggle to simultaneously meet the performance specifications of both communication and sensing modes. Furthermore, transmitter chip circuits designed solely using silicon-based processes suffer from insufficient transmit power, making it difficult to meet the transmit power demands of sensing mode.

[0004] In existing technologies, to balance these two requirements, trade-offs or additional complexity are usually necessary at the system level. A common approach is to use separate communication and sensing links, but this leads to a significant increase in hardware size, cost, and power consumption, which does not align with the trend towards system miniaturization and integration. Another approach is to attempt partial circuit reuse, but this often fails to achieve optimal performance in both modes simultaneously due to performance inconsistencies in power amplifiers and path and mode management challenges introduced by mixers.

[0005] Therefore, how to resolve the contradiction between the communication mode's requirement for a high back-off efficiency power amplifier and a necessary mixer, and the sensing mode's requirement for a power amplifier with high saturation output power and no need for mixing, within a compact and efficient RF front-end architecture, has become a pressing technical problem in this field. Summary of the Invention

[0006] Purpose of the invention: The present invention aims to provide an integrated millimeter-wave communication and sensing circuit to resolve the contradictions in the architecture, performance, and process requirements of the core RF front-end circuit between the two modes of communication and sensing.

[0007] Technical Solution: To achieve the above-mentioned objectives, the present invention provides a millimeter-wave communication and sensing integrated circuit, comprising: a local oscillator circuit for generating a local oscillator signal; a fusion mixer circuit connected to the local oscillator circuit for receiving the local oscillator signal, and capable of switching between operating as a mixer in communication mode and as an amplifier in sensing mode; a fusion power amplifier circuit connected to the fusion mixer circuit, designed using compound semiconductor technology, and capable of operating in sensing mode and communication mode respectively by switching voltage; and an antenna connected to the fusion power amplifier circuit for radiating the amplified signal.

[0008] Furthermore, the inductive fusion power amplifier circuit operates in a high-power output sensing mode and a back-off transmission efficiency-enhancing communication mode by switching voltages.

[0009] Furthermore, the inductive fusion power amplifier circuit employs a load-modulated balanced amplifier, which includes a balanced amplifier and a control amplifier. For the balanced amplifier, the operating state is controlled by switching the gate voltage; for the control amplifier, the saturated output power is controlled by switching the drain voltage. When operating in sensing mode, both the balanced amplifier and the control amplifier operate in Class AB; when operating in communication mode, the balanced amplifier operates in Class C, and the control amplifier operates in Class AB; or...

[0010] The inductive fusion power amplifier circuit uses a Doherty amplifier, which includes a peak amplifier and a carrier amplifier. For the peak amplifier, the operating state is controlled by switching the gate voltage. For the carrier amplifier, the saturated output power is controlled by switching the drain voltage. When operating in sensing mode, both the carrier amplifier and the peak amplifier operate in class AB. When operating in communication mode, the peak amplifier operates in class C, and the carrier amplifier operates in class AB.

[0011] Furthermore, the matching network of the inductive-sensing fusion power amplifier circuit adopts a fixed structure matching network compatible with both modes. The matching network adopts a p-type matching network or a third-order network. Based on the impedance matching targets of the sensing mode and the communication mode, the two modes are synergistically optimized through circuit simulation to obtain a compromise circuit structure that satisfies the matching of both modes within the required frequency band.

[0012] Furthermore, the inductive-sensor fusion mixer circuit employs a Gilbert mixer, with a ground switch added between the source of the local oscillator transistor and the drain of the transconductance transistor. By controlling the opening and closing of the ground switch, the inductive-sensor fusion mixer circuit operates as a standard Gilbert mixer in communication mode, and in sensing mode, it operates as a common-source amplifier or an amplifier containing a neutralizing capacitor by short-circuiting some transistors or changing their connection method.

[0013] Furthermore, the ground switches are either a pair symmetrically arranged between the local oscillator transistors and transconductance transistors on both sides, or a single one arranged between the local oscillator transistor and transconductance transistor on one side. When a pair of ground switches are closed, the transconductance transistors are short-circuited and fail, and the common-source amplifier composed of the four local oscillator transistors amplifies the input local oscillator signal. When one ground switch is closed, the transconductance transistor on one side acts as a pseudo current source, and the transconductance transistor on the other side fails. The four local oscillator transistors are converted into a differential common-source amplifier with a neutralizing capacitor, which differentially amplifies the input local oscillator signal.

[0014] Furthermore, the millimeter-wave communication sensing integrated circuit is implemented using a four-channel transmitter chip. The four-channel transmitter chip includes a silicon-based chip designed using silicon-based technology, and two amplifier chips designed using compound process technology located on both sides of the silicon-based chip. Each amplifier chip includes two independent amplifiers. The silicon-based chip is equipped with a local oscillator link and four transmitter channels. The local oscillator link is used to provide the input local oscillator signal to the inductive fusion mixer circuit of the four transmitter channels after frequency multiplication and power division.

[0015] Furthermore, each transmit channel includes the aforementioned inductive fusion mixer circuit, a switch placed after the inductive fusion mixer circuit for switching intermediate frequency signal reception and transmission, and a silicon-based driver amplifier for driving the compound amplifier.

[0016] Furthermore, the local oscillator circuit and the inductive-coupled mixer circuit are integrated on a silicon-based chip using silicon-based technology, and the inductive-coupled power amplifier is integrated on at least one compound semiconductor chip using compound semiconductor technology. The silicon-based chip and the compound semiconductor chip are packaged on the same substrate through heterogeneous integration.

[0017] Furthermore, the heterogeneous integration method includes:

[0018] The silicon-based chip and the compound chip are respectively mounted on the substrate, and the silicon-based chip and the compound chip are connected by bonding; the compound chip is connected to bonding pads on the substrate surface using gold wires, and extends through vias to the pin pads on the back of the entire chip; or...

[0019] The silicon-based chip and the compound chip are connected by a flip-chip method through a redistribution layer, and ball pads are placed on the surface through vias to the redistribution layer surface; a material is added to the back of the compound chip to conduct heat to the outside of the package housing.

[0020] Beneficial effects: Compared with the prior art, the present invention has the following significant effects:

[0021] 1. The millimeter-wave communication and sensing integrated circuit provided by this invention integrates two complete signal processing functions on a single RF transmission link by designing a traditional fixed-function mixer and power amplifier as a switchable operating mode fusion circuit. The fusion design of this invention has the advantages of compact structure and high circuit reusability. Furthermore, the amplifier circuit is designed using compound process technology, while the remaining circuits are designed using silicon-based process technology, combining the advantages of high transmit power, high integration, and flexible numerical control. This invention resolves the contradictions in architecture, performance, and process requirements of the core RF front-end circuit for both communication and sensing modes through deep functional reconfiguration and process co-design at the circuit level.

[0022] 2. The millimeter-wave communication sensing integrated circuit provided by this invention further employs a fixed-structure compatible matching network. Through collaborative optimization design, this network can simultaneously match the different modulation impedances presented at the transistor terminals in both modes to near their respective optimal impedances. This effectively avoids the additional losses, nonlinearities, and control complexity associated with using variable capacitors or switches, ensuring that the sensing-inductive fusion power amplifier circuit can operate stably in near-optimal power and efficiency ranges in both modes.

[0023] 3. In the millimeter-wave communication and sensing integrated circuit provided by this invention, the sensing-inductive fusion mixer circuit based on the Gilbert mixer design achieves a functional transformation by adding a ground switch. In communication mode, it can operate as a standard mixer; in sensing mode, it can be reconfigured into a high-performance differential common-source amplifier, realizing hardware multiplexing from a frequency converter to a power amplifier.

[0024] 4. The millimeter-wave communication sensing integrated circuit provided by this invention integrates silicon-based and compound semiconductor processes within the same package using advanced packaging technology, combining the advantages of both processes. The silicon-based portion achieves highly integrated control and frequency conversion, while the compound semiconductor portion provides high-power output to meet sensing requirements. Furthermore, optimized heat dissipation design can further solve the heat dissipation problem of the compound semiconductor chip, ultimately achieving a small-size, high-performance, and highly reliable millimeter-wave sensing integrated front-end solution. Attached Figure Description

[0025] The invention will become apparent and readily understood from the following description of the embodiments in conjunction with the accompanying drawings, in which:

[0026] Figure 1 This is a schematic diagram of a millimeter-wave communication sensing integrated circuit according to an embodiment of the present invention.

[0027] Figure 2 This is a schematic diagram showing the efficiency and transmit power of the inductive fusion amplifier in two operating modes in an embodiment of the present invention.

[0028] Figure 3 This is a schematic diagram of an example of a fusion amplifier according to the present invention.

[0029] Figure 4 This is a schematic diagram of another inductive fusion amplifier according to an example of the present invention.

[0030] Figure 5 This is a schematic diagram of an amplifier matching network according to an example of the present invention.

[0031] Figure 6 yes Figure 5 The diagram shows the effect of impedance trajectory changes in the corresponding amplifier matching network.

[0032] Figure 7 This is a schematic diagram of another amplifier matching network according to an example of the present invention.

[0033] Figure 8 yes Figure 7 The diagram shows the effect of impedance trajectory changes in the corresponding amplifier matching network.

[0034] Figure 9 This is a schematic diagram of an example of an untunable matching network of the present invention.

[0035] Figure 10 This is a schematic diagram of another non-tunable matching network as an example of the present invention.

[0036] Figure 11 This is a diagram illustrating the effect of impedance trajectory variation in an amplifier matching network, as exemplified by this invention.

[0037] Figure 12 This is a diagram illustrating the impedance trajectory variation of an amplifier matching network used for comparison, as an example of the present invention.

[0038] Figure 13 This is a schematic diagram of an example of an inductive fusion mixer according to the present invention.

[0039] Figure 14 This is a block diagram of a four-channel millimeter-wave communication sensing integrated transmitter chip provided in an embodiment of the present invention.

[0040] Figure 15 This is a schematic diagram of a specific packaging implementation of heterogeneous integration provided in an embodiment of the present invention.

[0041] Figure 16 This is a schematic diagram of another specific packaging implementation of heterogeneous integration provided in an embodiment of the present invention. Detailed Implementation

[0042] The technical solution of the present invention will be described in detail below with reference to the accompanying drawings and specific embodiments.

[0043] One possible embodiment of the circuit of the present invention is as follows: Figure 1 As shown, it includes a local oscillator circuit 11 designed using silicon-based technology, a fusion mixer circuit 12, a fusion power amplifier circuit 13 designed using compound process technology, and an antenna 14.

[0044] The local oscillator circuit 11 is used to provide a high-frequency carrier to the inductive fusion mixer circuit 12. It can be one or more of the following: phase-locked loop circuit, amplifier circuit, frequency multiplier circuit. As long as it generates a local oscillator signal, it can provide a high-frequency carrier to the inductive fusion mixer circuit 22.

[0045] The inductive-sensor fusion mixer circuit 12 is connected to the local oscillator circuit 11 and is used to receive the local oscillator signal. It can be switched between operating as a mixer in communication mode and as an amplifier in sensing mode. In this embodiment, the inductive-sensor fusion mixer circuit 12 can reuse part of the transistor structure and switch between operating as an amplifier or a mixer.

[0046] The inductive fusion power amplifier circuit 13, connected to the inductive fusion mixer circuit 12, is designed using compound semiconductor technology and can operate in sensing mode and communication mode by switching voltages. Compared to amplifiers designed using compound semiconductor technology, those using silicon-based technology have the advantage of generating high transmit power more easily due to their higher supply voltage, thus avoiding multiple combining circuits in silicon-based technology to generate high transmit power and improving amplifier efficiency. In communication mode, the inductive fusion power amplifier circuit 13 has the advantage of high efficiency in fallback scenarios. In sensing mode, the inductive fusion power amplifier circuit 13 can transmit at full power, offering the advantage of high transmit power.

[0047] like Figure 2 As shown, the curves representing transmit power and efficiency when operating in communication mode are denoted as L1, and those representing transmit power and efficiency when operating in sensing mode are denoted as L2. L1 is characterized by its ability to achieve high efficiency of over 20% even at low transmit power of 17-19 dBm, while L2 is characterized by its ability to generate transmit power of 25 dBm and above.

[0048] Antenna 14 is connected to the inductive fusion power amplifier circuit 13 and is used to radiate the amplified signal. In this embodiment, the specific antenna form and type are not limited. An on-chip antenna or a printed circuit board (PCB) antenna design can be used. It can be a microstrip antenna or a dipole antenna.

[0049] One possible implementation of the inductive fusion power amplifier circuit is, for example... Figure 3 As shown, the amplifier includes an input coupler 30, a balanced amplifier input coupler 31, and an output coupler 37. Couplers 31 and 37, along with transistors 33 and 34, and matching networks 35 and 36, constitute the balanced amplifier. Transistor 32 is a control amplifier transistor, and its output is connected to the balanced amplifier output coupler 37 for load modulation. The entire amplifier is a load-modulated balanced amplifier. Unlike traditional load-modulated balanced amplifiers, this amplifier system can operate in a high-power output sensing mode and a communication mode with improved back-off efficiency by switching voltages. For transistors 33 and 34 of the balanced amplifier, the operating state is controlled by switching their gate voltages; for transistor 32 of the control amplifier, the saturated output power is controlled by switching its drain voltage. When operating in the high-power output sensing mode, transistors 33 and 34 of the balanced amplifier and transistor 32 of the control amplifier both operate in Class AB with high drain bias to obtain the optimal output voltage swing and achieve the optimal output power through the coupler. When operating in the communication mode with improved back-off efficiency, transistors 33 and 34 of the balanced amplifier operate in Class C, and transistor 32 of the control amplifier operates in Class AB. As the input power increases, when the control amplifier approaches saturation and achieves high efficiency, the balanced amplifier turns on and its efficiency and power gradually increase, creating a high-efficiency back-off range.

[0050] One possible implementation of the inductive fusion power amplifier circuit is, for example... Figure 4As shown, the system includes an input coupler 40, a carrier amplifier transistor 41, matching networks 43 and 44, a peak amplifier transistor 42, and a quarter-wavelength transmission line 45. This amplifier is a Doherty amplifier. Unlike traditional Doherty amplifiers, this system can operate in a high-power output sensing mode and a back-off efficiency-enhanced communication mode by switching voltages. For the peak amplifier transistor 42, the operating state is controlled by switching its gate voltage; for the carrier amplifier transistor 41, the saturated output power is controlled by switching its drain voltage. In the high-power output sensing mode, both the carrier amplifier transistor 41 and the peak amplifier transistor 42 operate in Class AB with a high drain bias to achieve optimal output voltage swing and obtain optimal output power through the coupler. In the back-off efficiency-enhanced communication mode, the peak amplifier transistor 42 operates in Class C, and the carrier amplifier transistor 41 operates in Class AB. As the input power increases, when the carrier amplifier transistor 41 approaches saturation and achieves high efficiency, the peak amplifier transistor 42 turns on, and its efficiency and power gradually increase, creating a high-efficiency back-off range.

[0051] for Figure 3 The load-modulated balanced amplifier structure shown and Figure 4 The Doherty amplifier structure shown can be matched using adjustable devices such as variable capacitors or switches, and the coupler can be a Lange coupler, a parallel-line coupler, or other devices with power splitting and phase shifting functions.

[0052] for Figure 3 The load-modulated balanced amplifier structure shown and Figure 4 The Doherty amplifier structure shown does not indicate or imply a single transistor; it may contain multiple transistors to form a balanced amplifier, control amplifier, peak amplifier, and carrier amplifier.

[0053] Figure 5 and Figure 6 One possible implementation of matching networks 35, 36, 43, and 44 is given, including: designing a variable capacitor in the matching network and controlling the voltage to modify the size of the variable capacitor; or designing a switching switch in the matching network to switch to different impedance devices to achieve impedance compatibility between the two matching modes. Figure 5 One possible impedance variation method is presented: by appropriately adjusting the values ​​of variable capacitors 51 and 52, the impedance curves of current plane 1 or current plane 2 within the operating frequency range change from L3 to L4 on the Smith chart. Impedance curve L3 falls within the optimal impedance range of the transistor in communication mode, while impedance curve L4 falls within the optimal impedance range of the transistor in sensing mode. Figure 7 and Figure 8 Another possible impedance variation method is presented: by adjusting switches 73 and 74, and connecting capacitor 71 and inductor 72 in parallel in the matching network, the impedance curve of current plane 1 or current plane 2 within the operating frequency range can be changed from L5 to L6 on the Smith chart. Assuming the initial impedance curve L5 is within the optimal impedance range required for the communication mode, switches 73 and 74 are in the open state. Closing switches 73 and 74 adjusts the impedance curve from L5 to the optimal impedance range L6 required for the sensing mode.

[0054] The impedance curves L3-L6 are merely examples and do not specifically refer to or imply any particular impedance position on the Smith chart. The variable capacitors 52 and 53, the parallel capacitor 71, and the inductor 72 are also examples and do not specifically refer to or imply any particular matching configuration. Any use of variable capacitors or switching matching devices falls within the scope of this embodiment.

[0055] In a more preferred embodiment, to avoid the control complexity and potential stability risks introduced by switching or adjusting, matching network 1 and matching network 2 employ non-adjustable matching networks with impedance compatible in both modes. For example, for Figure 4 The load-modulated balanced amplifier structure shown exhibits modulation based on coupler principles. The ratio of signal power at the isolation terminal to the input signal power results in modulation, leading to different input impedances. In sensing mode, the balanced amplifier and control amplifier have relatively high power ratios, resulting in lower modulation impedances; the opposite is true in communication mode. Therefore, in a possible embodiment, the matching network is designed to match the compromise between the two impedances, effectively matching the transistor impedances in both modes. Similarly, for Figure 5 The Doherty amplifier structure shown employs non-adjustable matching networks 1 and 2 that are compatible with impedance in both modes. According to the active load modulation mechanism, the output signal power of the carrier amplifier modulates the output port impedance of the peak amplifier, resulting in different impedance values. In sensing mode, the modulation impedance is smaller due to the higher power of the carrier amplifier and the peak amplifier, while the opposite is true in communication mode. Therefore, in a possible embodiment, the matching network is designed to match a compromise between the two impedances, effectively matching the transistor impedance in both modes.

[0056] The following example illustrates an impedance matching network compatible with both modes (corresponding to...). Figure 3 and Figure 4 The implementation of matching network 1 and matching network 2 in the example.

[0057] In sensing mode, both the balanced / peak amplifier and the control / carrier amplifier operate in high-drain class AB. Let the modulation impedance at the output of the balanced / peak amplifier (BA) be... It needs to be matched to the optimal power load under high leakage voltage Class AB conditions. In communication mode, the balanced / peak amplifier (BA) operates in Class C, and the control / carrier amplifier operates in low-drain Class AB. Let the impedance of the balanced / peak amplifier (BA) at saturation be... It needs to be matched to the optimal power load under Class C. Similarly, the output impedance of the control / carrier amplifier (CA) corresponds to different optimal loads in the two modes due to the different drain voltages, but the input impedance of the output coupler corresponding to the CA port remains at Z0 (usually 50 ohms). That is, in both modes, Z0 needs to be matched to the corresponding optimal load.

[0058] The core design principle of this embodiment lies in finding a compromise fixed circuit structure for the matching network 1 used in the balanced / peak amplifier, such that... arrive Transformation and from arrive All transformations fall within the simulation-determined optimal power and efficiency circles on the Smith chart; this impedance range is the optimal impedance range. Similarly, for matching network 2, a compromise fixed circuit structure is sought to satisfy the impedance requirements from 50 ohms to... (High leakage voltage in sensing mode) and (When communication mode has low leakage voltage) Matching of the two modes.

[0059] The structures of matching network 1 and matching network 2 are variable depending on the different processes, frequency bands, and design specifications. In this embodiment, matching network 1 adopts a p-type matching network, and matching network 2 adopts a third-order network. During the design process, impedance matching in both modes is taken as a synchronous design goal, and collaborative optimization is performed using circuit simulation software. By adjusting the values ​​of capacitors and inductors in the matching networks, the impedance transformation trajectories in the two modes within the required frequency band (e.g., 40-70GHz) are made as close as possible to their respective optimal impedance ranges.

[0060] Figure 9 One possible embodiment of a p-type matching network is given, which includes parallel capacitors 91 and 94, and a series transmission line stub 92 and a series capacitor 93 connected in series between capacitors 91 and 94. Figure 10 A possible embodiment of a third-order network is given, which includes parallel capacitors 101 and 103, a series capacitor 104, and parallel transmission line stubs 105 and 102. The transmission line 102 is connected in series between capacitors 101 and 103, and capacitor 104 is connected in series between capacitor 103 and transmission line stub 105.

[0061] Figure 11A possible curve showing the current-side impedance of a balanced / peak amplifier (BA) as a function of input power, implemented using matching networks 1 and 2 designed to be compatible with both modes, is presented. In communication mode, as the input power increases, the current-side impedance gradually reaches within the optimal power and efficiency circles obtained by transistor load pulling; this impedance range is the optimal impedance range. In sensing mode, since there is no change in the current ratio, matching networks 1 and 2 match the fixed modulation impedance to the current-side impedance, which also lies within the optimal power and efficiency circles of the transistor at this time; this impedance range is also the optimal impedance range.

[0062] To further illustrate the advantages of matching networks in compatible designs Figure 12 The curves showing the current-surface impedance of a balanced / peak amplifier (BA) in sensing mode as a function of input power are presented, considering only the matching network designed for communication mode. It can be seen that as the input power increases, the overall impedance deviates from the optimal power and efficiency circles, thus affecting the amplifier's output power and efficiency in sensing mode.

[0063] In this embodiment, the collaboratively optimized matching network can be compatible with the matching of different modulation impedances and the optimal load impedance of the transistor current surface under the saturation state of the two modes. The communication sensing mode switching only requires adjusting the bias voltage of the circuit, without the need for adjustment in the RF circuit, making the switching very convenient.

[0064] Figure 13 One possible implementation of the inductive fusion mixer circuit 12 is presented. Unlike a traditional Gilbert mixer, a pair of ground-to-ground switches 134 and 137 are added between the source of the local oscillator stage transistors 130-133 and the drain of the transconductance stage transistors 135-136. Depending on the on / off state of the switches, the entire circuit has three operating modes. In mode one, switches 134 and 137 are closed, short-circuiting the two transistors 135-136 of the Gilbert mixer. The entire circuit is no longer a mixer circuit but becomes a common-source amplifier circuit composed of four transistors, differentially amplifying the input local oscillator (LO) signal. In mode two, only one switch is closed, for example, only switch 134 is closed and switch 137 is open. In this case, transistors 130 and 131 will act as the neutralizing capacitor for the differential common-source amplifier composed of transistors 132 and 133, and transistor 136 will act as a pseudo-current source. The entire circuit is an amplifier circuit with a neutralizing capacitor, differentially amplifying the input local oscillator (LO) signal. In mode three, switches 84 and 87 are simultaneously turned on, at which point the entire circuit functions as a standard Gilbert mixer circuit. Therefore, modes one and two are suitable for amplifying the local oscillator (LO) signal in sensing mode, while mode three is suitable for use as a mixer circuit in communication mode. In practical applications, modes one / two can be combined with mode three.

[0065] Figure 14 A block diagram of a four-channel millimeter-wave communication sensing integrated transmitter chip is presented. The entire four-channel transmitter chip includes a silicon-based chip 1403 designed using silicon-based technology and amplifier chips 1401 and 1402 designed using compound process technology. Among them, amplifier chips 1401 and 1402 consist of two independent amplifier groups, a silicon-based chip local oscillator link 1427, which is composed of amplifiers 1421, 1423, 1426, and 1428, frequency multipliers 1425 and 1427, and power dividers 1420 and 924. Its main function is to amplify and divide the input low-frequency local oscillator signal and provide the local oscillator carrier frequency signal to the four mixers 1409, 1412, 1415, and 1418. The four transmit channels include mixers 1409, 1412, 1415, and 1418 for mixing, switches 1410, 1411, 1416, and 1417 for switching between receive and transmit, and silicon-based driver amplifiers 1408, 1413, 1414, and 1419 for driving compound amplifiers. The transmit / receive switching switches are placed after the mixers to switch the intermediate frequency (IF) signal, rather than before the mixers as is traditionally done. This is because designing a high-linear-power switch in the millimeter-wave band is challenging and introduces significant losses.

[0066] The mixers 1409, 1412, 1415 and 1418, as well as the amplifiers 1404-1407, are all circuit devices designed with integrated communication and sensing.

[0067] Figure 15 A specific heterogeneous integration packaging implementation of the overall chip 1501 is presented. A silicon-based chip 1502, compound chips 1505 and 1506 are placed on a substrate 1512, and connected to each other using gold wires 1503 and 1504 via bonding. The compound chips are connected to bonding pads 1509 and 1510 on the substrate surface using gold wires 1507 and 1508, and connected to the back-side lead pads 1511 and 1513 of the entire chip via vias.

[0068] Figure 16 Another heterogeneous integration packaging implementation is presented, where the silicon-based chip 1607 and compound chips 1601 and 1602 are connected in a flip-chip manner. Specifically, the surface circuitry and pads of the chips are connected together through redistribution layers RDL 1606 and 1609, and solder balls 1605, 1608, and 1610 are designed and placed on the pad surface. This packaging method and... Figure 10In contrast, all chips are inverted, and in conventional designs, the back of the chip is not connected to any structure. Therefore, for high-power emission compound chips, there is a lack of suitable heat dissipation structures. Heat is dissipated to the outside of the package by adding 200µm molybdenum-copper additives 1603 and 1604 to the back of the compound chip. However, because compound chips are relatively thin, typically 50 to 100µm thick, while silicon-based chips are often over 300µm thick, one embodiment requires further thinning of the package after the entire heterogeneous integration is completed, thereby exposing the molybdenum-copper additive to facilitate heat dissipation to the outside of the package.

[0069] The terms "pad" and "gold wire" are used metaphorically and are not intended to indicate or imply quantities. The number of gold wires and pads can be increased or decreased depending on the specific chip circuit design.

[0070] Any aspects of this invention not described in detail are well-known to those skilled in the art.

[0071] Furthermore, those skilled in the art can combine and integrate the different embodiments or examples described in this specification, as well as the features of those different embodiments or examples, without contradiction. It should be understood that those skilled in the art can make numerous modifications and variations based on the concept of this invention without creative effort. Therefore, all technical solutions that can be obtained by those skilled in the art based on the concept of this invention through logical analysis, reasoning, or limited experimentation on the basis of the prior art should be within the scope of protection defined by the claims.

Claims

1. A millimeter-wave communication sensing integrated circuit, characterized in that, include: The local oscillator circuit is used to generate the local oscillator signal. The inductive fusion mixer circuit is connected to the local oscillator circuit and is used to receive the local oscillator signal. It can be switched by the circuit to work as a mixer in communication mode and as an amplifier in sensing mode. The inductive fusion power amplifier circuit, connected to the inductive fusion mixer circuit, is designed using compound semiconductor technology and can operate in sensing mode and communication mode respectively by switching voltage. And an antenna, connected to the inductive fusion power amplifier circuit, for radiating the amplified signal.

2. The millimeter-wave communication sensing integrated circuit according to claim 1, characterized in that, The inductive fusion power amplifier circuit operates in a high-power output sensing mode and a back-off transmission efficiency-enhancing communication mode by switching voltages.

3. The millimeter-wave communication sensing integrated circuit according to claim 2, characterized in that, The inductive fusion power amplifier circuit adopts a load-modulated balanced amplifier, which includes a balanced amplifier and a control amplifier. For the balanced amplifier, the operating state is controlled by switching the gate voltage. For the control amplifier, the saturated output power is controlled by switching the drain voltage. When operating in sensing mode, both the balanced amplifier and the control amplifier operate in class AB. When operating in communication mode, the balanced amplifier operates in class C, and the control amplifier operates in class AB. or, The inductive fusion power amplifier circuit uses a Doherty amplifier, which includes a peak amplifier and a carrier amplifier. For the peak amplifier, the operating state is controlled by switching the gate voltage. For the carrier amplifier, the saturated output power is controlled by switching the drain voltage. When operating in sensing mode, both the carrier amplifier and the peak amplifier operate in class AB. When operating in communication mode, the peak amplifier operates in class C, and the carrier amplifier operates in class AB.

4. The millimeter-wave communication sensing integrated circuit according to claim 3, characterized in that, The matching network of the inductive-sensing fusion power amplifier circuit adopts a fixed structure compatible with both modes. The matching network adopts a p-type matching network or a third-order network. Based on the impedance matching target of the sensing mode and the communication mode respectively, the circuit simulation is used to perform the collaborative optimization design of the two modes to obtain a compromise circuit structure that satisfies the matching of the two modes in the required frequency band.

5. The millimeter-wave communication sensing integrated circuit according to claim 1, characterized in that, The inductive-sensor fusion mixer circuit uses a Gilbert mixer. A ground switch is added between the source of the local oscillator transistor and the drain of the transconductance transistor. By controlling the opening and closing of the ground switch, the inductive-sensor fusion mixer circuit can operate as a standard Gilbert mixer in communication mode, and in sensing mode, it can operate as a common-source amplifier or an amplifier containing a neutralizing capacitor by short-circuiting some transistors or changing the connection method.

6. The millimeter-wave communication sensing integrated circuit according to claim 5, characterized in that, The grounding switches are either a pair symmetrically arranged between the local oscillator transistors and transconductance transistors on both sides, or a single switch arranged between the local oscillator transistors and transconductance transistors on one side. When a pair of grounding switches are closed, the transconductance transistors are short-circuited and fail, and the common-source amplifier composed of the four local oscillator transistors amplifies the input local oscillator signal. When one grounding switch is closed, the transconductance transistor on one side acts as a pseudo-current source, and the transconductance transistor on the other side fails. The four local oscillator transistors are converted into a differential common-source amplifier with a neutralizing capacitor, which differentially amplifies the input local oscillator signal.

7. The millimeter-wave communication sensing integrated circuit according to claim 1, characterized in that, The system employs a four-channel transmitter chip, which includes a silicon-based chip designed using silicon-based technology and two amplifier chips designed using compound process technology located on both sides of the silicon-based chip. Each amplifier chip includes two independent amplifiers. The silicon-based chip is equipped with a local oscillator link and four transmitter channels. The local oscillator link is used to amplify and divide the input local oscillator signal through frequency multiplication and power division before providing it to the inductive fusion mixer circuit of the four transmitter channels.

8. The millimeter-wave communication sensing integrated circuit according to claim 1, characterized in that, Each transmit channel includes the inductive fusion mixer circuit, a switch placed after the inductive fusion mixer circuit for switching intermediate frequency signal reception and transmission, and a silicon-based driver amplifier for driving the compound amplifier.

9. The millimeter-wave communication sensing integrated circuit according to claim 1, characterized in that, The local oscillator circuit and the inductive fusion mixer circuit are integrated on a silicon-based chip using silicon-based technology. The inductive fusion power amplifier is integrated on at least one compound semiconductor chip using compound semiconductor technology. The silicon-based chip and the compound chip are packaged on the same substrate through heterogeneous integration.

10. The millimeter-wave communication sensing integrated circuit according to claim 9, characterized in that, The heterogeneous integration method includes: The silicon-based chip and the compound chip are respectively mounted on the substrate, and the silicon-based chip and the compound chip are connected by bonding. The compound chip is connected to the bonding pads on the surface of the substrate using gold wires, and is connected to the pin pads on the back of the entire chip through through-holes. or, The silicon-based chip and the compound chip are connected by a flip-chip method through a redistribution layer, and ball pads are placed on the surface through vias to the redistribution layer surface; a material is added to the back of the compound chip to conduct heat to the outside of the package housing.

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